U.S. patent application number 10/945949 was filed with the patent office on 2005-03-10 for synthetic quartz powder, its production process, and synthetic quartz crucible.
This patent application is currently assigned to MITSUBISHI MATERIALS QUARTZ CORPORATION. Invention is credited to Fukui, Masanori, Sato, Takahiro.
Application Number | 20050050922 10/945949 |
Document ID | / |
Family ID | 18693869 |
Filed Date | 2005-03-10 |
United States Patent
Application |
20050050922 |
Kind Code |
A1 |
Fukui, Masanori ; et
al. |
March 10, 2005 |
Synthetic quartz powder, its production process, and synthetic
quartz crucible
Abstract
The amount of residual carbon and hydroxyl groups in a synthetic
quartz powder made by a wet process is reduced by baking the
synthetic quartz powder in a low pressure atmosphere. Quartz glass
crucibles made using the synthetic quartz powder have low bubble
contents, and are particularly suited for growing single
crystals.
Inventors: |
Fukui, Masanori; (Akita-shi,
JP) ; Sato, Takahiro; (Akita-shi, JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Assignee: |
MITSUBISHI MATERIALS QUARTZ
CORPORATION
Chiyoda-ku
JP
|
Family ID: |
18693869 |
Appl. No.: |
10/945949 |
Filed: |
September 22, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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10945949 |
Sep 22, 2004 |
|
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09892865 |
Jun 28, 2001 |
|
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6826927 |
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Current U.S.
Class: |
65/17.3 ;
428/428 |
Current CPC
Class: |
Y02P 40/57 20151101;
C03B 19/1065 20130101; C03C 3/06 20130101 |
Class at
Publication: |
065/017.3 ;
428/428 |
International
Class: |
B32B 017/06 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 28, 2000 |
JP |
2000-195167 |
Claims
1-6. (canceled)
7. A synthetic quartz powder made by a process comprising baking a
silica gel powder made by a wet process, or a synthetic quartz
powder made from the silica gel powder, under a low pressure
atmosphere at a pressure of less than 100 Pa and at a baking
temperature in a range higher than a temperature at which
decarbonization occurs and lower than a temperature at which
sintering occurs, wherein the synthetic quartz powder has a carbon
content of less than 2 ppm and a hydroxyl group content of less
than 50 ppm.
8. A quartz glass crucible made using a synthetic quartz powder,
wherein at least a part of an inside surface of the crucible is
made using the synthetic quartz powder of claim 7 as a raw
material.
9. A quartz glass crucible made from a synthetic quartz powder,
wherein at least a part of an inside surface of the crucible is
made using the synthetic quartz powder of claim 7; and a bubble
content in a transparent glass layer less than 0.5 mm thick forming
the inside surface of the crucible is less than 0.1%.
10. A synthetic quartz powder made by a process comprising baking a
silica gel powder, made by a wet process, to form a synthetic
quartz powder, where the baking is in air at atmospheric pressure
and at a temperature in a range higher than a temperature at which
hydroxyl groups are removed from the silica gel powder and lower
than a temperature at which the silica gel powder sinters; and
baking the synthetic quartz powder under a low pressure atmosphere
at a pressure of less than 100 Pa and at a baking temperature in a
range higher than a temperature at which decarbonization of the
synthetic quartz powder occurs and lower than a temperature at
which the synthetic quartz powder sinters, wherein the synthetic
quartz powder has a carbon content of less than 2 ppm and a
hydroxyl group content of less than 50 ppm.
11. A quartz glass crucible made using a synthetic quartz powder,
wherein at least a part of an inside surface of the crucible is
made using the synthetic quartz powder of claim 10 as a raw
material.
12. A quartz glass crucible made from a synthetic quartz powder,
wherein at least a part of an inside surface of the crucible is
made using the synthetic quartz powder of claim 10; and a bubble
content in a transparent glass layer less than 0.5 mm thick forming
the inside surface of the crucible is less than 0.1%.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] This invention relates to a synthetic quartz powder having
few residual gases and a low carbon and hydroxyl group content, its
production process, and a quartz crucible having a low bubble
content, which is made with the synthetic quartz powder.
[0003] 2. Discussion of the Background
[0004] A sol-gel process is known in which synthetic quartz powder
is made by drying and baking a gel obtained by hydrolyzing a metal
alkoxide. In this process an ethyl-silicate is hydrolyzed to be
gelled (nSi(OH).sub.4), the gelled ethyl-silicate is pulverized and
dried to obtain a silica gel powder, and the silica-gel powder is
baked at a predetermined temperature (about 1050.degree. C.) and
dehydrated to obtain an amorphous silica powder (nSiO.sub.2).
[0005] It is also known that the synthetic quartz powder made by
this process is of high purity, having fewer metal impurities than
a natural quartz powder, but that carbon and the hydroxyl group
causing the alkoxy group remain. From this reason, when a quartz
glass crucible is made by using the synthetic quartz powder
obtained by the sol-gel method as a raw material, the carbon may
cause bubbles to form.
[0006] Therefore, in the process for producing the synthetic quartz
powder by the sol-gel method, a trial is done in which residual
carbon is combusted and removed before the synthetic quartz powder
is made by baking a dry gel powder. Processes are well known in
which the amount of residual carbon is reduced by heat-treating the
dry gel powder, where the carbon is changed to carbon gases by
combustion at a temperature of less than 600.degree. C., at which
pores of the dry gel powder are not closed, in an oxygen atmosphere
(generally in air). (Japanese Patent Laid Open No. Hei 09-86916 and
Japanese Patent Application No. Hei 10-287416, etc.) In all of the
processes, the residual carbon in the dry gel powder is combusted
and removed before the pores of dry gel powder are closed. That is,
an amorphous synthetic quartz powder is made by baking the dry gel
powder at about 1000.degree. C. to 1300.degree. C., where the dry
gel powder is vitrified (closing pores), after decarbonizing at
less than 600.degree. C.
[0007] Moreover, it is also known that the process, in which the
amorphous synthetic quartz powder is made by pulverizing a quartz
glass ingot, which is made by baking the silica powder made by the
sol-gel method after heat-treating. (Japanese Patent Publication of
Examined Application No. Hei05-63416) The process removes an OH
group by fusing the silica powder made by the sol-gel method, which
is heated at 1500.degree. C. after combusting organic materials at
about 500.degree. C. in air. Moreover, the process is common in the
former process, wherein the residual carbon is combusted to be
removed, by heating in air at a temperature of less than
600.degree. C., at which the pores of dry gel powder are not
closed. In addition, in the process, the heating is done in a low
pressure atmosphere at time of making the glass ingot at about
1500.degree. C. for evacuation removal of the air contained in the
silica powder, and the removal of the residual carbon is mainly
done in the oxidization combusting process before vitrifying at
less than 600.degree. C. In the high temperature sintering at about
1500.degree. C., it is difficult to remove the carbon since the
silica powder is sintered.
[0008] Furthermore, a process is also known (Japanese Patent
Registration No.2530225) in which a predetermined high-density
synthetic quartz powder is made by baking in two stages under a dry
atmosphere or a reduced pressure, where the synthetic quartz powder
is made by baking dry gel powder. Although the process shows baking
under a reduced pressure as one mode of the baking process, since
the process has the objective of increasing the effect of
dehydration and the vacuum degree is low, the process is almost
ineffective for decarbonization. That is, since this baking process
heats with stirring while avoiding heating in the reduced pressure
container, it is difficult to keep high vacuum and the limit of the
reduced pressure is about 0.5 atmosphere in a real operation.
Therefore, the residual carbon cannot be removed at such a reduced
pressure.
[0009] About the synthetic silica powder made by the sol-gel
process in this way, although it is conventionally known that the
process, in which the residual carbon contained in silica powder is
combusted in air to be removed, the limit of concentration of the
residual carbon in the silica powder by said process is about 5 to
100 ppm, and it is difficult to reduce the residual carbon to less
than this value.
SUMMARY OF THE INVENTION
[0010] The present invention solves the above-mentioned problems,
and provides a treatment process that reduces the residual gases of
the synthetic quartz powder made by a wet process, especially the
amount of the residual carbon and the hydroxyl group content.
Moreover, the present invention provides a synthetic quartz powder
made by the treatment process, and a quartz glass crucible having
few bubbles contents made by the synthetic quartz powder.
[0011] That is, this invention relates to a process for producing
of synthetic quartz powder in the following embodiments.
[0012] (1) A process for producing of a synthetic quartz powder,
wherein a silica gel powder or a synthetic quartz powder made by
wet process is baked under a low pressure atmosphere of less than
100 Pa and at a temperature being from more than decarbonizing to
less than powder sintering.
[0013] (2) A process for producing of a synthetic quartz powder,
wherein a silica gel powder made by wet process is baked to be a
synthetic quartz powder under an air atmosphere and at a
temperature from more than removing a hydroxyl group to less than
powder sintering, and the synthetic quartz powder is baked under a
low pressure of less than 100 Pa and at a temperature being from
more than decarbonizing to less than powder sintering.
[0014] (3) The process for producing a synthetic quartz powder
according to above-mentioned (2), wherein the baking atmosphere is
a dry air or an oxidizing atmosphere, the baking temperature is
more than 800.degree. C. to less than 1400.degree. C., and a baking
time is 5 to 70 hours.
[0015] (4) The process for producing a synthetic quartz powder
according to above-mentioned (1) to (2), wherein the low pressure
is less than 50 Pa and the baking temperature is more than
600.degree. C. to less than 1400.degree. C.
[0016] (5) The process for producing a synthetic quartz powder
according to above-mentioned (1) to (2), wherein the baking time in
the low pressure atmosphere is defined by the time required to
reach a specified low pressure.
[0017] (6) The process for producing a synthetic quartz powder
according to above-mentioned (5), wherein the baking in the low
pressure atmosphere is finished when the pressure decreases to less
than 5 Pa.
[0018] Moreover, this invention relates to a following synthetic
quartz powder and quartz glass crucible.
[0019] (7) A synthetic quartz powder made by any processes
according to above-mentioned (1) to (2), wherein a carbon content
of the powder is less than 2 ppm and a hydroxyl group content is
less than 50 ppm.
[0020] (8) A quartz glass crucible made by a synthetic quartz
powder, wherein at least a part of an inside surface of the
crucible is made using the synthetic quartz powder of the
above-mentioned (7) as a raw material.
[0021] (9) A quartz glass crucible made by a synthetic quartz
powder, wherein at least a part of the inside surface of the
crucible is made using the synthetic quartz powder of the
above-mentioned (7), and a transparent glass layer 0.5 mm thick
forming the inside surface of the crucible has a bubble content of
less than 0.1%.
[0022] The process for producing of this invention reduces residual
gases in the powder, especially the residual carbon, by baking the
silica gel powder made by a wet process, or the synthetic quartz
powder made by baking the silica gel powder, while keeping the
state of the powder under the following conditions. The reduced
pressure is lower than a medium vacuum, that is, the reduced
pressure is less than 100 Pa, and is preferably to less than 50 Pa.
The temperature is from more than a decarbonizing temperature to
less than a powder sintering temperature, that is, specifically,
for example, more than 600.degree. C. to less than 1400.degree. C.
In addition, according to the process of this invention, an
amorphous synthetic quartz powder having a residual carbon content
of less than 2 ppm can be produced.
[0023] In addition, the process for producing of this invention
also includes the process that bakes to decarbonize in the
above-mentioned vacuum, after baking to remove the hydroxyl group
in an air atmosphere while keeping the powder state. By baking in
two stages in an air atmosphere and a low pressure atmosphere at
the specific temperature range, the amorphous synthetic quartz
powder, which is remarkably reduced in residual hydroxyl groups and
residual carbon, is made. Specifically, in the above-mentioned
synthetic quartz powder, the residual carbon is less than 2 ppm,
and the residual hydroxyl group is less than 50 ppm.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0024] Hereafter, preferred embodiments of the invention are
explained in detail with reference to examples.
[0025] The process for producing the synthetic quartz powder of
this invention is that the silica gel powder or the synthetic
quartz powder made by a wet process is baked in the low pressure
atmosphere of less than 100 Pa and at a temperature being from more
than decarbonizing to less than powder sintering. Moreover, the
synthetic quartz powder of this process is made by baking the
silica gel powder made by a wet process in an air atmosphere and at
a temperature being from more than that removing the hydroxyl group
to less than that sintering powder, and said synthetic quartz
powder is baked in the low pressure atmosphere of less than 100 Pa
and at the temperature being from more than that decarbonizing to
less than that sintering powder.
[0026] In this invention, the silica gel powder made by a wet
process is silica gel powder made by the sol-gel method by
hydrolyzing alkoxy-silane etc., and the synthetic quartz powder is
made from the silica gel powder. The dry silica gel powder is made
by pulverizing and drying the gel, which is made by hydrolyzing
alkoxy-silane etc. Moreover, by sintering at the predetermined
temperature and drying the silica gel powder, amorphous synthetic
quartz powder can be made.
[0027] In addition, a humid gel (a wet gel, i.e., an amorphous
silicate containing water) is made by hydrolyzing and gelling the
alkoxy-silane, such as ethyl-silcate, etc. The humid gel contains
alcohols and water in the pores. The dry gel is made by heating the
humid gel at 50.degree. C. to 200.degree. C. and drying alcohols
and water from the pores. Conventionally, the dry silica gel powder
has 1000 ppm to 10000 ppm of residual carbon, and contains 10 to 40
wt % of H.sub.2O.
[0028] The conventional process for producing the amorphous
synthetic quartz powder is that the residual carbon in the pore is
combusted by heating the dry silica gel powder at the predetermined
temperature (about less than 600.degree. C.) at which the pores are
not closed in air, and after reducing the carbon content to 50-2000
ppm, the silica gel powder is heated and baked at 1000 to
1300.degree. C., where the powder is vitrified and the pores
closed.
[0029] On the other hand, the process for producing of this
invention does not reduce the residual carbon only by combusting
the carbon at less than 600.degree. C., but by baking to
decarbonize in a reduced pressure less than medium vacuum, i.e.,
less than 100 Pa, preferably less than 50 Pa, while keeping in the
powder state. It is also good that this decarbonization by vacuum
baking is done, after the synthetic quartz powder is made by baking
the dry silica gel powder to reduce the hydroxyl group in air,
while keeping in the powder state. Moreover, it is also good that
preliminary baking is done before the air baking, if necessary. In
addition, the process for producing of this invention includes the
case of the vacuum baking being done after preliminary baking and
air baking. Hereafter, the preliminary baking, the air baking, and
the vacuum baking are explained in order of the processing.
[0030] Preliminary baking
[0031] The dry gel made by hydrolyzing alkoxy-silane contains 1000
ppm-10000 ppm of residual carbon, and contains 10-40 wt % of
H.sub.2O. By baking the dry silica gel at less than 600.degree. C.
in a dry atmosphere having oxygen, the residual carbon is combusted
and the residual moisture is evaporated. In the heating method, the
dry silica gel can be put into an electric furnace to heat where
the furnace is heated beforehand at 500 to 600.degree. C. The
heating time is 2 to 50 hours suitably. Moreover, since the
combustion of carbon accelerates as the oxygen concentration
becomes high, more than 30 vol % of oxygen concentration is
suitable, and a dry atmosphere is preferable to accelerate the
evaporation of the moisture. By the preliminary baking, the
H.sub.2O content can be reduced to 1 to 10 wt %, and the carbon
concentration can be reduced to 50 to 2000 ppm. However, since it
is difficult to reduce the H.sub.2O content and the carbon
concentration less than above-mentioned values under practical
conditions, the following air baking and vacuum baking are
done.
[0032] Air baking
[0033] By baking the silica gel powder in air, the content of the
hydroxyl group and the residual carbon is reduced, and the
amorphous synthetic quartz powder is made. Since it is better for
productivity to do the vacuum baking of the synthetic quartz powder
rather than doing vacuum baking of the silica gel powder directly,
it is preferable to do the air baking. The baking of the silica gel
powder in air is done at a temperature being from more than that
removing hydroxyl groups to less than that sintering powder, while
keeping the powder state. Here, the removing hydroxyl group
temperature is the temperature that the hydroxyl group contained in
the silica gel powder removes away, specifically, is more than
800.degree. C. in general, and preferably more than 1000.degree. C.
Moreover, the powder sintering temperature is the temperature that
keeps the powder state before the powder is fused to become a
block. In addition, the temperature producing partial sintering,
where the baked powder can be pulverized, is included in the range
of the temperature being less than the powder sintering.
Specifically, the temperature being less than the powder sintering
is less than 1400.degree. C. in general, and preferably less than
1300.degree. C. Although the baking time depends on the
temperature, it is enough to be 5 to 70 hours.
[0034] The temperature-rising speed in the air baking is preferably
1 to 10.degree. C./minute, both in the case of doing the air baking
from the preliminary baking continuously and in the case of doing
the preliminary baking and air baking independently. It is not
preferable that the temperature-rising speed be higher than the
above-mentioned value, since the carbon and the hydroxyl group
included in the powder are gasified rapidly to splash the
powder.
[0035] Both an air atmosphere and an oxidizing atmosphere are
suitable for the baking atmosphere of the air baking. In the case
of baking in the oxidizing atmosphere, since the combustion of
carbon is accelerated as the oxygen concentration becomes high,
such condition is preferable. Specifically, more than 30 vol % of
the oxygen concentration is suitable. Moreover, the dry atmosphere
is preferable in order to accelerate the evaporation of moisture.
Specifically, a low humidity atmosphere is suitable, in which the
dew point is less than -30.degree. C. and preferably less than
-50.degree. C.
[0036] By the above-mentioned air baking, the hydroxyl group
contained in silica gel powder is removed away, and the hydroxyl
group concentration decreases to 50 to 100 ppm. Moreover, the
contained carbon is also combusted simultaneously and the carbon
concentration decreases to 5 to 20 ppm. However, in general, it is
difficult to reduce the residual carbon to less than
above-mentioned level by the air baking. Therefore, in the process
for producing of this invention, the residual carbon can be reduced
remarkably by the vacuum baking after the air baking. In addition,
the hydroxyl group concentration is also reduced by the vacuum
baking. The vacuum baking can be done immediately after the air
baking or independently from the air baking.
[0037] Vacuum baking
[0038] The decarbonizing baking in a low pressure atmosphere is
done in less than 100 Pa and at a temperature being from more than
that for decarbonizing to less than that for powder sintering. The
decarbonizing temperature is the temperature at which the carbon is
gasified and removed away from the silica gel powder or the
synthetic quartz powder, and although is changed with vacuum
degree, is more than 600.degree. C. in general, and preferably more
than 800.degree. C. Moreover, as above-mentioned, the powder
sintering temperature is less than 1400.degree. C. in general, and
preferably less than 1300.degree. C. When the baking temperature is
less than 600.degree. C., the residual carbon cannot be removed
enough. On the other hand, when the baking temperature is more than
1400.degree. C., the raw material powder (the silica gel powder or
the synthetic quartz powder) is sintered to each other to become a
block and the specific surface area becomes small, so that the
decarbonization can not proceed. When the raw material powder is
baked while keeping the powder state, it is suitable to be less
than 1400.degree. C. In addition, when the baking temperature
becomes more than 1200.degree. C., the sintering of the raw
material powder is started partially, so that the sintered powder
must be crushed after the process of the vacuum baking. Therefore,
the process becomes costly and is not preferable. From this reason,
the baking temperature is preferably from 800 to 1200.degree. C.
Moreover, the baking time is suitably more than 1 hour, and
preferably 2 to 24 hours. When the baking time is less than 1 hour,
the decarbonization is insufficient.
[0039] The baking is done in a higher vacuum than medium vacuum (in
the vacuum of low pressure). Conventionally, the vacuum degree is
classified to three classes with the pressure, i.e., low vacuum (an
atmospheric pressure to 100 Pa), medium vacuum (100 Pa to 0.1 Pa),
high vacuum (0.1 Pa to 10.sup.-5 Pa), and ultra high vacuum (less
than 10.sup.-5 Pa). However, the baking of this invention is done
in a vacuum higher than medium vacuum, i.e., in the medium vacuum
less than 100 Pa, and the high vacuum less than 0.1 Pa. There is
not enough decarbonizing effect in the low vacuum more than 100 Pa.
The vacuum degree is preferably to be less than 50 Pa. The residual
carbon can be reduced in a short time as the vacuum degree becomes
high. An evacuating method is not limited.
[0040] By baking the raw material powder in the vacuum higher than
the medium vacuum less than 100 Pa, the carbon groups intermixed or
included in the raw material powder, or the carbon groups adsorbed
on the surface of the raw material powder, are decomposed to be
gasified and removed. Conventionally, the carbon contained in the
silica gel powder or the synthetic quartz powder exists with the
following various forms: (a) carbon taken in inside of the quartz
powder, (b) carbon adsorbed on the surface of the powder, and (c)
carbon intermixed between powders. By the preliminary baking and
the air baking, although the carbons of above mentioned (b) and (c)
can be removed, the carbon of above mentioned (a) cannot be removed
enough. For this reason, it is difficult to reduce the residual
carbon less than 5 ppm by the air baking. On the other hand, by the
vacuum baking, the carbon of above mentioned (a), (b), and (c) can
be removed away, especially, the carbon taken in inside of quartz
powder can be removed. Therefore, the residual carbon of quartz
powder can be reduced to less than 2 ppm. Moreover, since residual
hydroxyl group is also gasified and removed simultaneously, the
amount of hydroxyl group content can be less than 50 ppm.
[0041] Although either pressure reduction or the heating can be
done first at the time of the baking, when the heating is done
simultaneously with the pressure reduction or after the pressure
reduction is started, the vacuum degree is high at the time of
reaching to the predetermined temperature and more decarbonization
can be done in a short time, so that it is economical.
Specifically, for example, the inside of furnace is evacuated to 10
Pa, and the heating is started to raise the temperature for 8 hours
to 1100.degree. C. from room temperature (about 25.degree. C.).
After keeping at the fixed temperature of 1100.degree. C. for 10
hours, cooling is done. In this time, when the temperature-rising
speed is too high, the carbon and the hydroxyl group contained in
the powder gasify rapidly to splash the powder, so that the
temperature-rising speed is preferably to be 1 to 10.degree.
C./minute, as considering the balance with the processing time.
[0042] The vacuum baking can be ended after an objective vacuum is
reached. That is, for a while from the baking start, the pressure
inside of the furnace is raised by the expansion of residual air in
the heating furnace and the evaporation of the residual carbon and
the hydroxyl groups in the raw material powder. However, since
these gases are removed as time passes, after passing over a peak
the pressure inside of the furnace decreases for a short time
comparatively, and then, decreases gradually. Specifically, for
example, when the baking is done by heating at 1000.degree. C. to
1100.degree. C. in the reduced pressure of 50 Pa, although the
pressure first rises, the pressure becomes about 10 Pa in a short
time (about 2 hours), and then, decreases gradually to reach less
than 5 Pa after about 3 to 7 hours. Preferably the baking is ended
after reaching the objective vacuum.
[0043] Conventionally, when the baking is ended after reaching a
pressure of less than 5 Pa, the amount of the residual carbon in
the synthetic quartz powder can be reduced to less than 2 ppm and
the hydroxyl group concentration can be reduced to less than 50
ppm. In addition, when the baking is ended after reaching a
pressure of less than 1.5 Pa, the amount of the residual carbon of
the synthetic quartz powder can be reduced to less than 0.5 ppm and
the hydroxyl group concentration can be reduced to less than 30
ppm. Therefore, preferably the baking is ended after reaching a
pressure of less than 5 Pa , more preferably less than 1.5 Pa.
[0044] Although the vacuum baking can be done directly to the dry
silica gel powder which is not air baked, the dry silica gel has
low mass density and easily fills the vacuum heating furnace, so
its productivity is low. Therefore, when the synthetic quartz
powder having high density made by the air baking is used rather
than using the dry silica gel, the amount of filling the vacuum
heating furnace increases, and the productivity also is improved.
Moreover, when the air baking is done, the removal efficiency of
the hydroxyl group is good.
[0045] As above-mentioned, the process for producing of this
invention is the process, which gasifies and removes the residual
carbon contained in raw material powder by baking the powder in the
low pressure atmosphere. Therefore, this process is not the
conventional process, in which the residual carbon is removed by
combusting at the temperature of less than 600.degree. C. in the
oxygen atmosphere. That is, the process for producing of this
invention gasifies and removes the residual carbon from the raw
material powder of the dry silica gel powder or the amorphous
synthetic quartz powder, by heating said powder in the low pressure
atmosphere of less than 100 Pa, preferably less than 50 Pa at the
temperature of 600 to 1400.degree. C., while keeping the powder
state. Therefore, the process for producing of this invention is
different from the process that combusts the residual carbon in
oxygen atmosphere. In addition, the process of this invention bakes
the raw material powder while keeping the powder state, because the
residual carbon is difficult to be removed when the raw material
powder is sintered. Moreover, the most of the residual hydroxyl
group is gasified to be removed with the residual carbon by this
vacuum baking.
[0046] By using the process for producing of this invention,
amorphous synthetic quartz powder, where the carbon content is less
than 2 ppm and hydroxyl group content is less than 50 ppm, can be
obtained. When synthetic quartz powder having many residual carbons
is used as the raw material of the quartz crucible, the residual
carbon is decomposed and gasified to make bubbles under the high
temperature at the time of the heating fusion of the quartz powder,
so that the product has many bubbles. When said bubbles exist in
the silica glass crucible used for raising the a silicon single
crystal, such bubbles expand under high temperature at the time of
using, and at last burst to make concave parts, so that the growth
of the single crystal is prevented.
[0047] On the other hand, regarding the synthetic quartz powder of
this invention, the carbon content is less than 2 ppm and the
amount of hydroxyl groups is less than 50 ppm, which is much fewer
than the conventional synthetic quartz powder, so that a quartz
glass crucible having few bubbles can be made by using the
synthetic quartz powder for the raw material. Specifically, for
example, by forming an outside surface layer of the crucible by the
natural quartz powder, and using the synthetic quartz powder of
this invention as the raw material powder to make an inside surface
layer of the crucible, a quartz glass crucible can be made in which
the carbon content of the inside surface layer is less than 2 ppm.
Moreover, by the above-mentioned method, a quartz glass crucible
can be made with a transparent glass inner layer that, within 0.5
mm of the inside of the crucible, has a bubble content of less than
0.1%. In contrast, the bubble content of the inside surface layer
of a silica glass crucible made using conventional synthetic quartz
powder as the raw material is about 0.2 to 0.3%. Thus, this
invention can reduce the bubble content by more than about 50%.
[0048] Moreover, when the quartz glass crucible is made by using
the synthetic quartz powder of this invention, the average particle
diameter of the synthetic quartz powder is set to the suitable
diameter for making of the quartz glass crucible beforehand. For
example, it is suitable that, regarding the dry silica gel powder,
the diameter is 50 to 1000 .mu.m and preferably 100 to 600 .mu.m,
and regarding the amorphous synthetic quartz powder, the diameter
is 75 to 700 .mu.m and preferably 100 to 500 .mu.m. As for the
particle having the above-mentioned particle diameter, the
decarbonization reaction easily accelerates at the time of
heat-treating in the vacuum of more than the medium vacuum.
[0049] Conventionally, the quartz glass crucible made using the
synthetic quartz powder as the raw material has more bubbles than
the crucible made by the natural quartz powder, because many gas
components (OH group and carbon) are contained in the synthetic
quartz powder compared with the natural quartz powder. Although the
gas components become the sources of generating bubbles, there are
expanding bubbles and disappearing bubbles without expanding, at
the time of using the crucible. The components of the expanding
bubbles are mainly CO and CO.sub.2, and the main components of the
bubbles that do not expand so much are moisture (H.sub.2O).
Therefore, the amount of carbon contained in the raw material
powder of the quartz glass crucible has much influence on the
quality of the crucible.
[0050] According to the process of this invention, since the amount
of the residual carbon can be remarkably reduced by the dry silica
gel powder and the amorphous synthetic quartz powder as
above-mentioned, quartz glass crucibles having quite few bubbles
can be made by using these powders as the raw material. Moreover,
regarding not only the quartz glass crucible, but also other silica
glass products made by the synthetic quartz powder as the raw
material, products having few bubbles and low carbon contents can
be made.
EXAMPLES
[0051] The invention will be explained more concretely with the
following examples.
Example 1 and Comparison Example 1
[0052] The vacuum baking of the amorphous synthetic quartz powder
obtained by hydrolyzing alkoxy-silane was done under the conditions
shown in Table 1. In addition, since the pressure of the inside of
the vacuum furnace is raised with the gases generated by baking,
the baking was done while evacuating suitably the inside to keep
the predetermined vacuum degree. The amount of the residual carbon
by this vacuum baking is shown in Table 1. Moreover, a quartz glass
crucible was made by using the baked synthetic quartz powder as the
part of the raw material. That is, by the rotational molding
method, a quartz glass crucible (24 inches diameter) was made, in
which the natural quartz powder was used for the outside part, and
the synthetic quartz powder shown in Table 1 was used for the
inside part, and in addition, the layer thickness of 2 to 3 mm from
the inside surface (the inside surface layer of the crucible) was
made with the synthetic quartz layer, and the outside of the layer
(the outside surface layer of the crucible) was made with the
natural quartz layer (the layer thickness of 10-12 mm). Regarding
this quartz glass crucible, the bubble content and carbon
concentration at a part of 0.5 mm from the inside surface were
measured. Moreover, the silicon single crystal was raised by using
these crucibles. This result (the average value of five) was
summarized in Table 1.
[0053] As shown in Table 1, the synthetic quartz powder made by
baking process of this invention (Example: No. A1 to No. A4) has
very few amounts of the residual carbon.
[0054] Therefore, there were also few bubbles content of quartz
glass crucible, and the excellent rate of single-crystalizing is
realized. In addition, as for these sample No. A1 to No. A4, when
the synthetic quartz powder was put into the glass crucible to be
covered with a cap, and the crucible was put in the vacuum heating
chamber for the baking process, then the carbon has adhered to the
reverse side of the cap after baking, so that it could be also
checked visually that the carbon, which is equivalent to the amount
of adhesion at least, had moved away from the quartz powder of the
raw material (decarbonization).
[0055] On the other hand, in the comparison example (No. B1 to No.
B3) which was out of the conditions of the baking process of this
invention, the carbon was not adhered to the reverse side of the
cap, and large amounts of the residual carbon were measured by
analyzing the quartz powder after baking processing. For this
reason, the bubble content of the quartz glass crucible made with
this quartz powder was 2 to 5 times that of the crucible of this
invention, and the rate of single-crystalizing was as low as about
50% of this inventions. Moreover, as for the comparison example No.
B4, the raw material powder sintered to a block, so that the quartz
crucible could not be made.
Example 2 and Comparison Example 2
[0056] By baking 100 kg of silica gel powder made by hydrolyzing
alkoxy-silane (the amount of the residual carbon is 93 ppm,
H.sub.2O content is 40 wt %) under the conditions shown in Table 2,
amorphous synthetic quartz powder was made. In addition, the vacuum
baking of this example is different from the Example 1, which was
baked while keeping the predetermined vacuum degree. The vacuum
baking of this example is baked under the vacuum of less than 50
Pa, is continued while always evacuating the gas generated by
baking, and is ended after reaching the objective vacuum degree.
The result of this baking process was shown in Table 2 with the
reached vacuum degree. Furthermore, the quartz glass crucible was
made like the Example 1 by using the synthetic quartz powder after
a baking process as a part of the raw material. Regarding this
quartz crucible, the bubble content of the part 0.5 mm from the
inside surface and the carbon concentration are shown in Table 2.
Moreover, the bubble content after using the crucible for raising
the silicon single crystal was shown in Table 2.
[0057] For each synthetic quartz powder (No. A21-No. A27) of this
invention after the vacuum baking, the amount of residual carbon is
less than 2 ppm, and the amount of residual hydroxyl group is less
than 50 ppm, which is remarkably small. Moreover, there are also
very few bubbles in the quartz crucibles made. On the other hand,
since the comparison sample No. B21 was done at too high a
temperature for the air baking, most of the silica gel powder
sintered, so the objective synthetic quartz powder could not be
obtained. Moreover, since the comparison sample No. B22 was done at
too high a temperature for the vacuum baking, most of the powder
sintered. In addition, since the comparison sample No. B23 was done
at too low temperature of the vacuum baking, the decarbonization
and drying in the vacuum baking hardly proceeded, and the amount of
the residual carbon and the residual hydroxyl group hardly changed
at the time of the air baking. Furthermore, since the comparison
sample No. B24 was done at a low temperature of the air baking, the
temperature-rising speed was high at the time of the subsequent
vacuum baking, so that gases generated rapidly to splash the raw
material powder. Moreover, since the comparison sample No. B25 and
No. B26, were done under low vacuum, there were very large amounts
of residual carbon and residual hydroxyl groups after baking. From
this reason, the bubble content of the resulting quartz crucible
was high, and in the comparison sample No. B26 a lot of bubbles
were generated, so that the sample was not suitable for practical
use.
[0058] The disclosure of the priority document, Japanese
Application No. 2000-195167 filed Jun. 28, 2000, is incorporated by
reference herein in its entirety.
1 TABLE 1 Example 1 Comparison Example 1 A1 A2 A3 A4 B1 B2 B3 B4
Residual Carbon content 15.7 15.7 15.7 15.7 15.7 15.7 15.7 15.7
(Before Treatment: ppm) Vacuum Baking Maximum Temperature (.degree.
C.) 1150 1000 750 650 Non Treatment 500 1150 1500 Heating Time (hr)
4 10 18 24 -- 24 4 2 Vacuum Degree (Pa) 10 10 10 70 -- 70 200 100
Carbon Content (ppm) 0.4 1.00 1.5 1.9 15.7 10.1 8.7 Quartz Crucible
Carbon content (ppm) 0.4 1.00 1.5 1.9 15.7 10.1 8.7 Raw Material
Rate of Bubble Content (Before Use: %) 0.03 0.06 0.08 0.09 0.27
0.20 0.21 Powder was Rate of Bubble Content (After Use: %) 1.2 3.4
4.4 5.7 19.3 14.3 13.4 Sintered like a Block. Rate of
Single-Crystalizing (%) 77 74 70 68 33 45 46 Judgement
.circleincircle. .smallcircle. .smallcircle. .smallcircle. x x x x
Notes The column of Quartz Crucible is the value of the inside
surface layer formed with the synthetic quartz. Judgement is that
.circleincircle. is Best, .smallcircle. is Good, and x is No Good.
Heating Time is the heating time at the maximum temperature. Rate
of Bubble Content is the value of the layer have 0.5 mm thickness
from the inside surface of the crucible. Rate of
Single-Crystalizing is weight of single crystal/weight of raw
material poly-crystal (%) Unit of Rate of Bubble content and Rate
of Single-crystalizing is %.
[0059]
2 TABLE 2 Example 1 Comparison Example 1 A21 A22 A23 A24 A25 A26
A27 B21 B22 B23 B24 B25 B26 Air Baking Maximum Tem- 1300 1300 1200
1200 800 1000 1000 1450 1200 1200 500 1000 1000 perature (.degree.
C.) Heating Time (hr) 36 36 60 48 70 15 15 5 60 60 120 15 15 After
Air Baking Almost Carbon Concen- 7.7 7.7 13.7 16.1 47.4 320 320 raw
13.7 13.7 0.2 wt % 320 320 tration (ppm) material Hydroxyl group 54
54 61 69 1430 970 970 powder 61 61 9.2 wt % 970 970 concentration
was (ppm) sintered Vacuum Baking in While Maximum Tem- 1300 600
1200 1150 1200 1150 1150 the 1450 550 heating 1150 1150 perature
(.degree. C.) Air up to Heating Time (hr) 2 80 24 12 36 48 24
Baking. 8 100 800.degree. C. 12 6 Reached Vacuum 4.8 4.6 0.9 1.4
4.1 1.2 5.0 24 0.6 gases were 15 37 Degree (Pa) generated After
Vacuum suddenly Baking and Carbon Concen- 1.8 1.6 0.3 0.5 1.2 0.4
1.8 9.4 13.7 the 18.4 43.3 tration (ppm) raw Hydroxyl group 48 44
23 30 40 26 47 51 61 material 71 155 concentration powder (ppm) was
Quartz Crucible Almost splashed Man Carbon concen- 1.8 1.6 0.3 0.5
1.2 0.4 1.8 raw 13.7 18.4 bubbl tration (ppm) material wer Rate of
Bubble 0.09 0.08 0.02 0.05 0.08 0.03 0.09 powder 0.24 0.35 genera
Content was (Before Use: %) sintered Rate of Bubble 5.5 4.3 1.0 3.2
4.3 1.4 5.3 in the 22.4 24.1 Content Vacuum (After Use: %) Baking.
Rate of Single- 66 70 77 73 70 77 68 40 30 Crystalizing (%)
Judgement .largecircle. .largecircle. .circleincircle.
.largecircle. .largecircle. .circleincircle. .largecircle. X X X X
X X Notes: The column of Quartz Crucible is the value of the inside
surface layer formed with the synthetic quartz. Judgement is that
.circleincircle. is Best, .largecircle. is Good, and X is No Good.
Heating Time is the heating time at the maximum temperature. Rate o
Bubble Content is the value of the layer have 0.5 mm thickness from
the inside surface of the crucible. Rate of Single-Crystalizing is
weight of single crystal/weight of raw material poly-crystal (%)
Unit of Rate of Bubble content and Rate of Single-crystalizing is
%. Residual Carbon concentration of the raw silica gel powder at
before treatment is 9340 ppm and H.sub.2O content is 40 wt %.
* * * * *