U.S. patent application number 10/938630 was filed with the patent office on 2005-02-10 for method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured.
This patent application is currently assigned to Murata Manufacturing Co., Ltd.. Invention is credited to Nishikawa, Masanaga, Sato, Tomoharu, Ueda, Masaya.
Application Number | 20050029608 10/938630 |
Document ID | / |
Family ID | 18688051 |
Filed Date | 2005-02-10 |
United States Patent
Application |
20050029608 |
Kind Code |
A1 |
Ueda, Masaya ; et
al. |
February 10, 2005 |
Method for manufacturing semiconductor thin film, and
magnetoelectric conversion element provided with semiconductor thin
film thereby manufactured
Abstract
A method for manufacturing a semiconductor thin film having high
carrier mobility, and a magnetoelectric conversion element provided
with the semiconductor thin film manufactured by the aforementioned
method are provided. The temperature of the Si single crystal
substrate is raised to 270.degree. C. to 320.degree. C., and an In
buffer layer is formed by an electron beam heating type vacuum
evaporation method. Subsequently, an initial seed layer made of Sb
and In is formed. The temperature of the Si single crystal
substrate is raised to 460.degree. C. to 480.degree. C., and
thereafter, a retention time approximated by a predetermined
function of the temperature of the Si single crystal substrate is
provided. Then, a main growth layer made of Sb and In is
formed.
Inventors: |
Ueda, Masaya; (Matto-shi,
JP) ; Sato, Tomoharu; (Kanazawa-shi, JP) ;
Nishikawa, Masanaga; (Kanazawa-shi, JP) |
Correspondence
Address: |
Joseph R. Keating , Esq.
KEATING & BENNETT, LLP
Suite 312
10400 Eaton Place
Fairfax
VA
22030
US
|
Assignee: |
Murata Manufacturing Co.,
Ltd.
Nagaokakyo-shi
JP
|
Family ID: |
18688051 |
Appl. No.: |
10/938630 |
Filed: |
September 13, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10938630 |
Sep 13, 2004 |
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10426461 |
May 1, 2003 |
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10426461 |
May 1, 2003 |
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09886775 |
Jun 21, 2001 |
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6610583 |
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Current U.S.
Class: |
257/425 ;
257/E43.005; 257/E43.006; 438/652; 438/660; 438/679 |
Current CPC
Class: |
H01L 21/02381 20130101;
H01L 21/02491 20130101; H01L 21/02658 20130101; H01L 43/14
20130101; H01L 21/02549 20130101; H01L 21/02631 20130101; H01L
21/02466 20130101; H01L 21/02502 20130101; H01L 43/12 20130101 |
Class at
Publication: |
257/425 ;
438/679; 438/652; 438/660 |
International
Class: |
H01L 021/00; H01L
021/44; H01L 029/82; H01L 043/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 22, 2000 |
JP |
2000-188220 |
Claims
1-28. (canceled)
29. An electronic component comprising: a substrate made of a
silicon single crystal material and having a surface from which a
surface oxide film has been removed, said surface being a hydrogen
terminated surface; a semiconductor thin film including: a buffer
layer including indium disposed on said surface of said substrate;
an initial seed layer including indium disposed on said buffer
layer; a main growth layer including indium and antimony disposed
on said initial seed layer; and at least one of a short circuit
electrode, a terminal electrode, and a protection film disposed on
said main growth layer.
30. The electronic component according to claim 29, wherein the
carrier mobility of the semiconductor thin film is at least about
45,000 cm.sup.2/V.multidot.s.
31. The electronic component according to claim 29, wherein the
substrate has an n-type (111) surface, a thickness of about 200 mm
to about 500 mm, and a resistivity of at least about 1
kW.multidot.cm.
31. The electronic component according to claim 29, further
comprising a meandrous magnetic resistance pattern disposed on said
main growth layer.
33. The electronic component according to claim 31, wherein said at
least one of the short circuit electrode, the terminal electrode,
and the protection film disposed on said main growth layer includes
at least two terminal electrodes disposed adjacent to the meandrous
magnetic resistance pattern at two ends of the substrate.
34. The electronic component according to claim 32, wherein said at
least one of the short circuit electrode, the terminal electrode,
and the protection film disposed on said main growth layer includes
a short circuit electrode connected to the meandrous magnetic
resistance pattern.
35. The electronic component according to claim 29, wherein the at
least one of the short circuit electrode, the terminal electrode,
and the protection film disposed on said main growth layer is
composed of Ni, Ti, Cr, Cu, Ge, Au, or Al, or an alloy thereof.
36. A magnetic sensor comprising: a circuit substrate have a first
surface and a second surface; an electronic component according to
claim 32 disposed on the first surface of said circuit substrate; a
magnet for applying a biasing magnetic field to the electronic
component disposed on the second surface of said circuit substrate;
and a non-magnetic protection case accommodating said circuit
substrate, said electronic component and said magnet.
37. The magnetic sensor according to claim 36, further comprising:
at least two terminals; and at least two lead frames; wherein said
circuit substrate includes through holes and said electronic
component includes at least two terminal electrodes disposed
adjacent to the meandrous magnetic resistance pattern at two ends
of the substrate; said at least two terminals are disposed in said
through holes; and said at least two terminals and said at least
two terminal electrodes are connected to each other via said at
least two lead frames.
38. A magnetoelectric conversion element comprising: a substrate
made of a silicon single crystal material and having a surface from
which a surface oxide film has been removed, said surface being a
hydrogen terminated surface; a semiconductor thin film including: a
buffer layer including indium disposed on said surface of said
substrate; an initial seed layer including indium disposed on said
buffer layer; a main growth layer including indium and antimony
disposed on said initial seed layer; and a plurality of terminal
electrodes disposed on said main growth layer.
39. The electronic component according to claim 38, wherein the
carrier mobility of the semiconductor thin film is at least about
45,000 cm.sup.2/V.multidot.s.
40. The magnetoelectric conversion element according to claim 38,
further comprising a hall-effect pattern disposed on said main
growth layer, wherein said plurality of terminal electrodes are
connected to said hall-effect pattern.
41. The magnetoelectric conversion element according to claim 40,
wherein said hall-effect pattern is cross-shaped, and said
plurality of terminal electrodes are connected to ends of the
cross-shaped hall-effect pattern so as to be arranged along edges
of the substrate.
42. The magnetoelectric conversion element according to claim 38,
wherein said plurality of terminal electrodes are composed of Ni,
Ti, Cr, Cu, Ge, Au, or Al, or an alloy thereof.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a method for manufacturing
a semiconductor thin film, in particular, an indium antimonide thin
film, and relates to a magnetoelectric conversion element provided
with the semiconductor thin film manufactured by the aforementioned
method.
[0003] 2. Description of the Related Art
[0004] Hitherto, an indium antimonide, that is, InSb, compound
semiconductor having high carrier mobility has been used as a
material for magnetoelectric conversion elements, such as a
magnetic resistance element and a hall element. Among those, for
example, an InSb magnetic resistance element was made of an InSb
single crystal bulk flake being adhered to a support substrate, and
thereafter, being polished so as to be an element, although there
was a problem of poor reliability at a high temperature. This was
because of an occurrence of degradation in the adhesion force at a
high temperature, an occurrence of peeling and cracks due to
differences in thermal expansion coefficients among InSb, an
adhesion layer, and a support substrate, etc. Therefore, in recent
years, many attempts were made to directly grow semiconductor thin
films of III-V compounds, such as InSb, on Si substrates, and an
InSb thin film having good quality was produced as disclosed in
Japanese Unexamined Patent Application Publication No. 7-249577.
Since the InSb thin film having high quality was directly formed on
the Si substrate so as to be an element, this film was a potential
magnetic resistance material for high temperature uses, such as car
electronics.
[0005] When the InSb thin film was grown on the Si substrate in
accordance with the method disclosed in Japanese Unexamined Patent
Application Publication No. 7-249577, however, the carrier mobility
was about 42,000 cm.sup.2/V.multidot.s or less, and was not
sufficient for the desired sensitivity of the magnetic resistance
element.
SUMMARY OF THE INVENTION
[0006] Accordingly, it is an object of the present invention to
provide a method for manufacturing a semiconductor thin film having
high carrier mobility. It is another object of the present
invention to provide an electronic component, such as
magnetoelectric conversion element, provided with the semiconductor
thin film manufactured by the aforementioned method.
[0007] In order to achieve the aforementioned objects, a method for
manufacturing a semiconductor thin film according to an aspect of
the present invention is composed of the steps of removing a
surface oxide film from a substrate having a surface made of a
silicon single crystal hydrogen, terminating the surface of the
substrate, forming a buffer layer made of indium on the substrate,
forming an initial seed layer made of indium and antimony on the
buffer layer, and forming a main growth layer made of indium and
antimony on the initial seed layer while a temperature of the
aforementioned substrate is kept at 460.degree. C. to 480.degree.
C.
[0008] The step of removing the surface oxide film from the
substrate having the surface made of the silicon single crystal and
the step of hydrogen terminating the surface of the substrate are
preferably performed at the same time with a treatment using an
aqueous solution selected from the group consisting of an aqueous
solution of hydrogen fluoride, an aqueous solution of ammonium
fluoride, and a mixed aqueous solution thereof. Furthermore, in the
formation of the main growth layer, it is preferable to raise a
temperature of the substrate having the surface made of the silicon
single crystal to 460.degree. C. to 480.degree. C., and to form the
main growth layer after a retention time approximated by a function
of the temperature of the substrate is provided.
[0009] According to the aforementioned method, the semiconductor
thin film having high carrier mobility can be produced. More
specifically, when the temperature T (.degree. C.) of the substrate
having the surface made of the silicon single crystal is in the
range of 460 to 480 (.degree. C.), and the retention time .tau.
(min) satisfies the relationship represented by the formula
-0.02T.sup.2+17.3T-3703<.tau.<-0.02T.sup.2+17.3T-369- 1, a
carrier mobility of 45,000 cm.sup.2/V.multidot.s to 52,000
cm.sup.2/V.multidot.s can be stably exhibited.
[0010] The method for manufacturing the semiconductor thin film
according to the present invention is preferably further composed
of the step of forming the main growth layer at a relatively low
growth velocity so as to have a predetermined layer thickness, and
the step of successively forming the main growth layer at a
relatively high growth velocity. More specifically, it is
preferable that the main growth layer is formed at a low growth
velocity of 0.01 to 0.5 nm/s until the film thickness reaches 5 to
100 nm, and the main growth layer is successively formed at a high
growth velocity of 0.2 to 5 nm/s.
[0011] According to the aforementioned method, in the process of
forming the main growth layer, the crystallization property of InSb
is improved by controlling the supply velocity of In and Sb at a
low level in the initial stage of the main growth layer. After the
layer thickness reaches the predetermined value, the InSb thin film
can be successively formed at increased supply velocities of both
materials without degradation of the crystallization property.
[0012] The step of removing the surface oxide film from the
substrate having the surface made of the silicon single crystal and
the step of hydrogen terminating the surface of the substrate are
preferably performed with a treatment using an aqueous solution
selected from the group consisting of an aqueous solution of
hydrogen fluoride, an aqueous solution of ammonium fluoride, and a
mixed aqueous solution thereof while the surface of the substrate
is continuously exposed to the aforementioned aqueous solution in
an activated state, so that all over the surface of the
aforementioned substrate is uniformly hydrogen terminated.
[0013] In the formation of the buffer layer, the initial seed
layer, and the main growth layer, it is preferable to heat and
vaporize indium by an electron beam heating type vacuum evaporation
method, and to deposit vaporized indium on the substrate having the
surface made of the silicon single crystal.
[0014] Regarding an electronic component, such as magnetoelectric
conversion element, according to another aspect of the present
invention, the component includes a semiconductor thin film formed
by the method of manufacture having the aforementioned features,
and further includes at least one of a short circuit electrode, a
terminal electrode, and a protection film, so that the component
has sufficient reliability at a high temperature and has superior
electrical properties.
[0015] Other features and advantages of the present invention will
become apparent from the following description of the invention
which refers to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWING(S)
[0016] FIG. 1 is a schematic structural diagram of a vacuum
evaporation apparatus used in a method for manufacturing a
semiconductor thin film according to the present invention;
[0017] FIG. 2 is a time chart diagram regarding a Si substrate
temperature in a method for manufacturing a semiconductor thin film
according to an embodiment of the present invention;
[0018] FIG. 3 is a graph showing the relationship between the Si
substrate temperature and the carrier mobility;
[0019] FIG. 4 is a graph showing the relationship between the
retention time and the carrier mobility;
[0020] FIG. 5 is a graph showing the relationship between the Si
substrate temperature and the retention time;
[0021] FIG. 6 is a graph showing the relationship between the
carrier mobility at each Si substrate temperature and the
half-width;
[0022] FIG. 7 is a perspective view of a magnetoelectric conversion
element according to an embodiment of the present invention;
[0023] FIG. 8 is a sectional view of a magnetic sensor using the
magnetoelectric conversion element as shown in FIG. 7;
[0024] FIG. 9 is a perspective view of a magnetoelectric conversion
element, such as a hall effect device, according to another
embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0025] Preferred embodiments of the method for manufacturing the
semiconductor thin film and of the magnetoelectric conversion
element provided with the semiconductor thin film manufactured by
the aforementioned method according to the present invention are
explained below with reference to the drawings.
[0026] First, the surface of a Si single crystal substrate is
hydrogen terminated (hereafter referred to as HF termination) using
an aqueous solution of hydrogen fluoride (HF). Specifically, the Si
single crystal substrate is subjected to an organic cleaning, an
acid cleaning, an alkali cleaning, and an ultrasonic cleaning.
Subsequently, the Si single crystal substrate is immersed in a 5%
aqueous solution of hydrogen fluoride while at a standstill for 1
minute, and then is washed in ultrapure water. An oxide film on the
surface of the Si single crystal substrate is thereby removed with
etching, and thereafter, exposed dangling bonds of Si are bonded
with hydrogen (Si--H bond) so as to be hydrogen terminated. The
resulting surface of the Si single crystal substrate subjected to
the HF termination treatment has an effect of preventing natural
oxidation. In order to stabilize the quality in the manufacture
process, however, the Si single crystal substrate is preferably set
in the vacuum evaporation apparatus within 30 minutes after
completion of the HF termination treatment. The Si single crystal
substrate has an n-type (111) surface, a thickness of 200 to 500
mm, and a resistivity of 1 kW.multidot.cm or more. A hydrogen
termination effect similar to the aforementioned effect can be
produced using the aqueous solution of ammonium fluoride
(NH.sub.4F) or a mixed aqueous solution of an aqueous solution of
hydrogen fluoride and an aqueous solution of ammonium fluoride.
[0027] FIG. 1 is a schematic structural diagram of a vacuum
evaporation apparatus 1. A crucible 3 containing In, an evaporation
boat 4 containing Sb, an electron beam gun 5 for heating the In,
and a heater 7 for heating a Si single crystal substrate 11 are
contained in a vacuum chamber 2.
[0028] The Si single crystal substrate 11 subjected to the HF
termination treatment is set in the vacuum evaporation apparatus 1,
and thereafter, the vacuum chamber 2 is exhausted until the degree
of vacuum reaches 1.times.10.sup.-3 Pa or less. Then, as shown in
FIG. 2, the temperature of the Si single crystal substrate 11 is
raised to 270.degree. C. to 320.degree. C. by heating with the
heater 7. In contained in the crucible 3 is heated by the electron
beam 8 irradiated from the electron beam gun 5, so that an In
buffer layer is formed on the surface of the Si single crystal
substrate 11 by an electron beam heating type vacuum evaporation
method as is indicated by A in FIG. 2, which is a step of forming
the In buffer layer. The thickness of the resulting In buffer layer
is 0.2 to 1.0 nm.
[0029] Subsequently, the whole of the evaporation boat 4 is heated
by a current being passed through the evaporation boat 4, so that
Sb contained in the evaporation boat 4 is heated, and an initial
seed layer made of Sb by the boat heating type vacuum evaporation
method and In by the electron beam heating type vacuum evaporation
method is formed on the surface of the In buffer layer as is
indicated by B in FIG. 2, which is a step of forming the initial
seed layer. The thickness of the resulting initial seed layer is 2
to 200 nm. At this time, a supply ratio of Sb relative to In, that
is, Sb/In, is 1.2 to 3.0. The crystallization property of the
resulting InSb initial seed layer has a significant effect on the
quality of the InSb thin film, and is affected by the temperature
of the Si single crystal substrate, the thickness of the In buffer
layer, the supply ratio In/Sb, and the thickness of the initial
seed layer. As the method for vapor depositing Sb, a resistance
heating type vacuum evaporation method, in which a crucible is
heated with a heater, may be adopted.
[0030] Next, a step of forming a main growth layer is performed.
Herein, it was discovered that the temperature of the Si single
crystal substrate 11 during the formation of the main growth layer
and the carrier mobility of the manufactured InSb thin film had the
relationship shown in FIG. 3. That is, the carrier mobility of the
InSb thin film increases exponentially with increasing temperature
of the Si single crystal substrate 11, so that the carrier mobility
exceeds 45,000 cm.sup.2/V.multidot.s at 460.degree. C. or more.
When the temperature of the Si single crystal substrate 11 is
further raised exceeding 480.degree. C., however, the carrier
mobility is decreased to less than 45,000
cm.sup.2/V.multidot.s.
[0031] In addition, after the temperature of the Si single crystal
substrate 11 is raised to each of 465.degree. C., 475.degree. C.,
and 480.degree. C., retention times are provided at each of the
substrate temperatures prior to the start of the formation of the
main growth layer, and the relationship among the substrate
temperature, the retention time, and the carrier mobility is
examined. As is clear from FIG. 4, the carrier mobility varied with
the retention time at every temperature, and there were optimum
retention times. Regarding each of the cases in which the
temperature were 465.degree. C., 475.degree. C., and 480.degree.
C., and the carrier mobility exceeded 45,000 cm.sup.2/V.multidot.s,
when the relationships between the temperature T (.degree. C.) and
the retention time .tau. (min) were plotted, those could be
approximated by a quadratic function as shown in FIG. 5. That is,
the relationships between the temperature T (.degree. C.) and the
retention time .tau. (min), in order to obtain a carrier mobility
exceeding 45,000 cm.sup.2/V.multidot.s, is approximated, using the
least-squares method, by the following formula (1):
-0.02T.sup.2+17.3T-3703<.tau.<-0.02T.sup.2+17.3T-3691 wherein
T is between 460.degree. C. and 480.degree. C. Formula (1)
[0032] As described above, it is indicated that there is an optimum
substrate temperature and an optimum retention time for bringing
out crystallization of InSb having a stoichiometric composition by
a heat treatment of In and Sb, supplied on the Si single crystal
substrate 11 during the formation of the initial seed layer, in the
step of forming the main growth layer.
[0033] Regarding the step of forming the main growth layer, the
half-widths of the rocking curves based on the X-ray diffraction
(XRD) of the InSb thin films and the evaluation results of the
carrier mobility, in the case in which the formations were
performed after the optimum retention times relative to various
substrate temperatures determined from the aforementioned formula
(1), are shown in FIG. 6. The half-width decreases and the carrier
mobility increases with increasing of the substrate temperature.
That is, it was made clear that the optimization of the annealing
effect determined from the substrate temperature and the retention
time contributes to improve the orientation property of the crystal
of the InSb thin film and to improve the carrier mobility.
[0034] Therefore, as shown in FIG. 2, when the initial seed layer
having a predetermined film thickness is formed, the vapor
deposition is suspended, and the temperature of the Si single
crystal substrate 11 is raised to 460.degree. C. to 480.degree. C.
After the temperature of the Si single crystal substrate 11 is
raised to 460.degree. C. to 480.degree. C., the retention time
.tau. (min) approximated by the function of the temperature T
(.degree. C.) of the Si single crystal substrate 11 is provided.
More specifically, the retention time .tau. (min) satisfying the
aforementioned formula (1) is provided as is indicated by C in FIG.
2, which is a step of retaining.
[0035] After the Si single crystal substrate 11 has been retained
for retention time .tau. (min), the formation of the main growth
layer made of Sb by the boat heating type vacuum evaporation method
and In by the electron beam heating type vacuum evaporation method
is started. The growth velocity of the main growth layer is low, in
the range of 0.01 to 0.5 nm/s, immediately after the start as is
indicated by D in FIG. 2, which is a step of forming the main
growth layer at a low velocity. When the film thickness of the main
growth layer reaches 5 to 100 nm, the growth velocity is switched
to a high velocity growth rate, in the range of 0.2 to 5 nm/s, and
the InSb main growth layer is formed until the film thickness
finally reaches about 2 to 4 mm as is indicated by E in FIG. 2,
which is a step of forming the main growth layer at a high
velocity. In the formation of the main growth layer, the supply
ratio of Sb relative to In, that is, Sb/In, is 1.4 to 4.0.
[0036] As described above, regarding the step of forming the main
growth layer, since the supply velocities of In and Sb in the
initial stage of the start are controlled to be at a low level, in
the lattice misfit transition region with Si in which inversions
are likely to concentrate, In atoms and Sb atoms are allowed time
to locate at stable lattice positions by surface diffusion.
Accompanying this, the crystallization property of InSb is improved
and the carrier mobility is further increased. Thereafter, the
thickness of the InSb main growth layer is increased, and when the
growth reaches a pure InSb orientation growth region in which the
influence of the Si crystal lattice is decreased, the
crystallization property is not degraded with increase in the
supply velocity of In and Sb.
[0037] The resulting InSb thin film was evaluated using a
reflection high-energy electron diffraction (RHEED), an X-ray
diffraction (XRD), and an inductively coupled plasma-atomic
emission spectroscopy (ICP-AES). As a result, it was made clear
that the initial seed layer before the start of the main growth
layer and the main growth layer were epitaxially grown InSb(111)
having astoichiometric composition on Si(111). The carrier mobility
was measured using a Van der Pauw's method with the result that the
carrier mobility was high, e.g., 45,000 cm.sup.2/V.multidot.s to
52,000 cm.sup.2/V.multidot.s.
[0038] Regarding the present embodiment, in the formation of the In
buffer layer, the InSb initial seed layer, and the InSb main growth
layer, In is vacuum evaporated using the electron beam heating
method (EB method). In the case in which the low melting point
material, In, is vapor deposited, in general, the resistance
heating type vacuum evaporation method is used. In the present
embodiment, however, since the control of the vapor deposition
velocity is important, the EB method is adopted, in which finer
power control is possible regarding the source of the vapor
deposition. Consequently, while variations in the vapor deposition
velocity of the conventional resistance heating type are .+-.0.1
nm/s, regarding the present embodiment, the velocity can be
controlled with variations of .+-.0.01 nm/s or less, the thin film
can be formed at a low velocity of the order of 0.01 nm/s, and the
film thickness can be controlled with high precision of the order
of 0.1 nm, so that the semiconductor thin film having excellent
quality can be formed.
[0039] In the aforementioned embodiment, regarding the HF
termination treatment of the Si single crystal substrate 11, the Si
single crystal substrate 11 was immersed in the 5% aqueous solution
of hydrogen fluoride at a standstill for 1 minute, although it is
preferable to immerse the Si single crystal substrate 11 in the 5%
aqueous solution of hydrogen fluoride while continuously shaking
for 1 minute. Statistical values, in the lot of formed films, of
the carrier mobility of each of the InSb thin film formed on the Si
single crystal substrate 11 treated at a standstill and the InSb
thin film formed on the Si single crystal substrate 11 treated
while shaking are shown in Table 1. Average values of the carrier
mobility of both thin films are equivalent to each other, although
variations, that is, 3.times.standard deviation/average value, in
the treatment while shaking is decreased by about 60% compared to
that in the treatment while still standing. When the Si single
crystal substrate 11 is shaken in the aqueous solution of hydrogen
fluoride, the surface of the Si single crystal substrate 11 can be
continuously exposed to the aqueous solution of hydrogen fluoride
in a fresh and activated state, so that stable HF termination can
be performed on all over the Si single crystal substrate 11, and
variations in the electrical properties, such as the carrier
mobility and the resistivity, can be decreased.
1 TABLE 1 Treatment While At A Treatment While Standstill Shaking
Average Value 4.86 .times. 10.sup.4 4.90 .times. 10.sup.4
(cm.sup.2/V .multidot. s) Standard Deviation 0.25 .times. 10.sup.4
0.10 .times. 10.sup.4 (cm.sup.2/V .multidot. s) 3 .times. Standard
Deviation/ 15.31 6.01 Average Value (%)
[0040] Furthermore, while the Si single crystal substrate 11 is at
a standstill, the surface of the Si single crystal substrate 11 can
be continuously exposed to the aqueous solution of hydrogen
fluoride in a fresh and activated state by the step of:
[0041] (1) blowing N.sub.2, etc., through the bath of the aqueous
solution of hydrogen fluoride so as to bubble and agitate;
[0042] (2) jetting the aqueous solution of hydrogen fluoride from a
nozzle, etc.; or
[0043] (3) agitating the aqueous solution of hydrogen fluoride
using an agitation vane, etc., so that the effects similar to those
in above description can be produced.
[0044] A magnetic resistance element 21 as shown in FIG. 7, which
is one of the magnetoelectric conversion elements, was formed as
follows. The InSb thin film formed on the Si single crystal
substrate 11 was subjected to photolithography and etching so as to
form a magnetic resistance pattern, and furthermore, a short
circuit electrode and terminal electrodes, composed of Ni, Ti, Cr,
Cu, Ge, Au, Al, etc., or an alloy thereof, or a multi-layer film,
were formed by photolithography, and etching or lift-off. A
meandrous magnetic resistance pattern 22 for producing a
predetermined magnetic resistance, a short circuit electrode 22',
and a protection film, although not shown in the drawing, are
formed on the upper face 11a (hereafter referred to as detection
face 11a) of the Si single crystal substrate 11. Terminal
electrodes 24a and 24b are formed at both ends of the substrate 11.
Regarding this magnetic resistance element 21, even when the
temperature cycle from -50.degree. C. to +150.degree. C. is
repeated, problems of adhesion defect between the materials,
peeling, and degradation in properties are not generated, so that
sufficient durability in high temperature uses can be
exhibited.
[0045] FIG. 8 is a structural sectional view of a magnetic sensor
31 provided with the aforementioned magnetic resistance element 21.
The magnetic sensor 31 is composed of the magnetic resistance
element 21, a magnet 33 for applying a bias magnetic field to the
magnetic resistance element 21, a circuit substrate 34 which is a
support member for mounting the components 21 and 33, and a
non-magnetic protection case 36.
[0046] The magnetic resistance element 21 is mounted in a
horizontal position on the circuit substrate 34 with an adhesive,
etc. On the other hand, terminals 38 are inserted through
penetration holes 34a provided in the circuit substrate 34. The top
parts of the terminals 38 and the terminal electrodes 24a and 24b
of the magnetic resistance element 21 are connected with lead
frames 37. These may be electrically connected via circuit
patterns, although not shown in the drawing, provided on the
circuit substrate 34.
[0047] The magnet 33 is fastened using an adhesive to the face on
the opposite side of the face, on which the magnetic resistance
element 21 is mounted, of the circuit substrate 34. The magnet 33
faces the magnetic resistance element 21 with the circuit substrate
34 therebetween. The circuit substrate 34 mounted with the
components 21, 33, and 38 are contained in the non-magnetic
protection case 36 together with a filler 35.
[0048] A hall-effect device 41, as shown in FIG. 9, which is one of
the magnetoelectric conversion elements, was formed as follows. The
InSb thin film formed on the Si single crystal substrate 11 was
subjected to photolithography and etching so as to form a
hall-effect element pattern, and furthermore, terminal electrodes,
composed of Ni, Ti, Cr, Cu, Ge, Au, Al, etc., or an alloy thereof,
or a multi-layer film, are formed by photolithography, and etching
or lift-off. The hall-effect element pattern 42 in the shape of a
cross and a protection film, although not shown in the drawing, are
formed on the detection face 11a of the Si single crystal substrate
11. Terminal electrodes 43a, 43b, 44a, and 44b are formed on the
four side faces of the substrate 11. Regarding this hall-effect
device 41, even when the temperature cycle from -50.degree. C. to
+150.degree. C. is repeated, problems of adhesion defect between
the materials, peeling, and degradation in properties are not
generated, so that sufficient durability in high temperature uses
can be exhibited.
[0049] The method for manufacturing the semiconductor thin film,
and the magnetoelectric conversion element provided with the
semiconductor thin film manufactured by the aforementioned method
according to the present invention are not limited to the
aforementioned embodiments. The present invention covers various
modifications within the scope of the invention. For example, in
the aforementioned embodiments, a (111) substrate was used as the
Si single crystal substrate, although substrates of (100) and other
orientation, and graded substrates may be used. When the surface is
the Si single crystal film as the SOI (silicon on insulator)
structure substrate formed by a lamination method or an ion
injection method, a semiconductor thin film having excellent
quality similar to those can be produced. In particular, in the
case in which the substrate has an SOI structure, since the leakage
current to the substrate can be minimized by decreasing the layer
thickness of the Si crystal, which is the semiconductor, the
sensitivity properties are excellent in the application for the
magnetoelectric conversion element, etc.
[0050] In the aforementioned embodiments, the In buffer layer, the
InSb initial seed layer, and the InSb main growth layer were formed
by the vacuum evaporation method, although semiconductor thin films
having excellent quality can be produced by using an appropriate
ion or plasma, for example, by a PAD method (Plasma Assisted
Deposition method) and ICB method (Ion Cluster Beam method).
Regarding the vacuum evaporation of In, the resistance heating type
vacuum evaporation method may be used instead of the EB method.
[0051] As is clear from the above description, according to the
present invention, by forming the main growth layer made of indium
and antimony while the temperature of the substrate having the
surface made of a silicon single crystal is kept at 460.degree. C.
to 480.degree. C., the semiconductor thin film having high carrier
mobility of 45,000 cm.sup.2/V.multidot.s or more can be produced.
As a consequence, the InSb thin film having the carrier mobility
equivalent to that of the conventional InSb single crystal bulk
flake can be directly formed without interposition of the adhesive
layer, so that superior semiconductor magnetoelectric conversion
element having sufficiently satisfactory reliability in the use at
the temperature range of -50.degree. C. to +150.degree. C. can be
produced.
[0052] Furthermore, in the formation of the main growth layer, the
temperature of the substrate having a surface made of the silicon
single crystal is raised to 460.degree. C. to 480.degree. C., and
subsequently, the main growth layer is formed after the retention
time approximated by the function of the temperature of the
aforementioned substrate is provided, so that the semiconductor
thin film having high carrier mobility can be further stably
produced.
[0053] The main growth layer is initially formed at a relatively
low growth velocity so as to have a predetermined layer thickness,
and successively, the main growth layer is formed at a relatively
high growth velocity, so that the semiconductor thin film having
high carrier mobility can be efficiently produced.
[0054] The surface oxide film is removed from the substrate having
the surface made of the silicon single crystal and hydrogen
termination of the surface of the substrate are performed with the
treatment using aqueous solutions, such as an aqueous solution of
hydrogen fluoride, while the surface of the substrate is
continuously exposed to the aqueous solution in the activated
state, so that the semiconductor thin film having decreased
variations in the electrical properties and having stable quality
can be formed.
[0055] Furthermore, when In is vacuum evaporated using the electron
beam heating method, the thin film can be formed at a low velocity
of the order of 0.01 nm/s, and the film thickness can be controlled
with high precision of the order of 0.1 nm, so that the
semiconductor thin film having an excellent quality can be
formed.
[0056] Although the present invention has been described in
relation to particular embodiments thereof, many other variations
and modifications and other uses will become apparent to those
skilled in the art. It is preferred, therefore, that the present
invention be limited not by the specific disclosure herein, but
only by the appended claims.
* * * * *