U.S. patent application number 10/928010 was filed with the patent office on 2005-02-03 for wavelength tunable laser.
This patent application is currently assigned to AVRIO TECHNOLOGIES, INC.. Invention is credited to Ma, Yong.
Application Number | 20050025199 10/928010 |
Document ID | / |
Family ID | 27752696 |
Filed Date | 2005-02-03 |
United States Patent
Application |
20050025199 |
Kind Code |
A1 |
Ma, Yong |
February 3, 2005 |
Wavelength tunable laser
Abstract
A wavelength tunable laser comprising a laser diode and a closed
external cavity formed by one or more optical resonators either
horizontally or vertically coupled to adjacent waveguides. The
optical resonator primarily functions as a wavelength selector and
may be in the form of disk, ring or other closed cavity geometries.
The emission from one end of the laser diode is coupled into the
first waveguide using optical lens or butt-joint method and
transferred to the second waveguide through evanescent coupling
between the waveguides and optical resonator. A mirror system or
high reflection coating at the end of the second waveguide reflects
the light backwards into the system resulting in a closed optical
cavity. Lasing can be achieved when the optical gain overcomes the
optical loss in this closed cavity for a certain resonance
wavelength which is tunable by changing the resonance condition of
the optical resonator through reversed biased voltage or current
injection. Multiple optical resonators may be used to reduce the
lasing threshold and provide higher power output. With monolithic
integration, more optical devices can be integrated with the
tunable laser into the same substrate to produce optical devices
that are capable of more complex functions, such as tunable
transmitters or waveguide buses.
Inventors: |
Ma, Yong; (Simi Valley,
CA) |
Correspondence
Address: |
ORRICK, HERRINGTON & SUTCLIFFE, LLP
4 PARK PLAZA
SUITE 1600
IRVINE
CA
92614-2558
US
|
Assignee: |
AVRIO TECHNOLOGIES, INC.
|
Family ID: |
27752696 |
Appl. No.: |
10/928010 |
Filed: |
August 27, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10928010 |
Aug 27, 2004 |
|
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|
10077522 |
Feb 15, 2002 |
|
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Current U.S.
Class: |
372/20 |
Current CPC
Class: |
H01S 5/1075 20130101;
H01S 5/1071 20130101; H01S 5/1032 20130101; H01S 5/142 20130101;
H01S 5/141 20130101 |
Class at
Publication: |
372/020 |
International
Class: |
H01S 003/10 |
Claims
What is claimed is:
1. In a tunable laser system comprising a laser and a resonator
having an adjustable refractive index induced tunable resonance
wavelength, a method for tuning the wavelength of the tunable laser
system comprising: adjusting the refractive index of the resonator
by applying an electrical signal to the resonator such that the
resonance wavelength of the resonance corresponds to a selected
wavelength; coupling light emissions from the laser into the
resonator through evanescent coupling, whereby substantially only
the light emissions having a wavelength at the resonance wavelength
of the resonator are coupled into the resonator; and coupling light
at the resonance frequency of the resonator from the resonator back
into the laser.
2. The method of claim 1, wherein the electrical signal comprises a
voltage.
3. The method of claim 1, wherein the electrical signal comprises a
current.
4. The method of claim 1, wherein the laser comprises a laser
diode.
5. The method of claim 4, further comprising applying a current to
the laser diode below a lasing threshold of the laser diode to
generate the light emissions.
6. The method of claim 5, further comprising applying enough
current to the laser diode so that light at the resonance frequency
of the resonator has enough gain to overcome optical losses
associated with the system.
7. The method of claim 6, wherein the laser diode has opposing
first and second end facets, the light emissions are emitted from
the second end facet of the laser diode, light at the resonance
frequency of the resonator is coupled from the resonator back into
the laser diode through the second end facet, and the method
further comprises increasing the current applied to the laser diode
until light at the resonance frequency of the resonator becomes
lasing and is outputted from the first end facet of the laser
diode.
8. The method of claim 1, further comprising: coupling light at the
resonance frequency of the resonator from the resonator into a
waveguide; reflecting the light coupled into the waveguide back
toward the resonator; and coupling the reflected light from the
waveguide back into the resonator.
9. The method of claim 8, wherein the light in the waveguide is
reflected using a mirror.
10. The method of claim 8, wherein the light in the waveguide is
reflected using a reflective coating on the waveguide.
11. The method of claim 8, wherein light is coupled into the
waveguide through evanescent coupling.
12. The method of claim 1, further comprising adjusting the
resonance frequency of the resonator to another selected frequency
by changing the electrical signal applied to the resonator.
13. In a tunable laser system comprising a laser and a
waveguide-coupled resonator, the waveguide-coupled resonator
comprising first and second waveguides and a resonator having an
adjustable refractive index induced tunable resonance wavelength, a
method for tuning the wavelength of the tunable laser system
comprising: adjusting the refractive index of the resonator by
applying an electrical signal to the resonator such that the
resonance wavelength of the resonance corresponds to a selected
wavelength; coupling light emissions from the laser into the first
waveguide; coupling the light emissions from the first waveguide
into the resonator through evanescent coupling, whereby
substantially only the light emissions having a wavelength at the
resonance wavelength of the resonator are coupled into the
resonator; coupling light at the resonance frequency of the
resonator from the resonator into the second waveguide; reflecting
the light coupled into the second waveguide back toward the
resonator; coupling the reflected light from the second waveguide
back into the resonator; coupling light at the resonance frequency
of the resonator from the resonator back into the first waveguide;
and coupling light at the resonance frequency of the resonator from
the first waveguide back into the laser.
14. The method of claim 13, wherein the electrical signal comprises
a voltage.
15. The method of claim 13, wherein the electrical signal comprises
a current.
16. The method of claim 13, wherein the light in the second
waveguide is reflected using a mirror.
17. The method of claim 13, wherein the light in the second
waveguide is reflected using a reflective coating on the second
waveguide.
18. The method of claim 13, wherein the laser comprises a laser
diode.
19. The method of claim 18, further comprising applying a current
to the laser diode below a lasing threshold of the laser diode to
generate the light emissions.
20. The method of claim 19, further comprising applying enough
current to the laser diode so that light at the resonance frequency
of the resonator has enough gain to overcome optical losses
associated with the system.
21. The method of claim 20, wherein the laser diode has opposing
first and second end facets, the light emissions are emitted from
the second end facet of the laser diode, light at the resonance
frequency of the resonator is coupled from the first waveguide into
the laser diode through the second end facet, and the method
further comprises increasing the current applied to the laser diode
until light at the resonance frequency of the resonator becomes
lasing and is outputted from the first end facet of the laser
diode.
22. The method of claim 13, further comprising adjusting the
resonance frequency of the resonator to another selected frequency
by changing the electrical signal applied to the resonator.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of co-pending application
Ser. No. 10/077,522 filed Feb. 15, 2002, which application is fully
incorporated herein by reference.
FIELD OF THE INVENTION
[0002] The present invention relates to the field of optical
communications and more particularly, to a light source with
tunable wavelength for use in optical communications systems.
BACKGROUND OF THE INVENTION
[0003] The rapid growth of Internet data traffic has driven current
fiber optic networks to a new stage where much broader bandwidth
and higher capacity are required. Dense wavelength division
multiplexed (DWDM) systems with narrow channel spacing and low
crosstalk have proven to be a promising solution. Generally in a
DWDM system, each channel is represented by a fixed wavelength from
a wavelength-fixed laser source and all the different channels are
sent into the same optical fiber and transmitted to a receiver end.
In order to fully implement a DWDM system with thousands of
channels under this wavelength-fixed scheme, service providers in
the telecom industry face huge inventory, complexity, and cost
problems because of the large number of laser sources and
accessories needed, as well as the need for backup lasers and spare
parts. However, the use of tunable laser sources in which the
lasing wavelength can be tuned over a certain range, for instance,
the wavelength band of erbium doped optical-fiber amplifier (EDFA),
could dramatically simplify a DWDM system, enable highly flexible
and effective utilization of the optical fiber bandwidth, and,
thus, can significantly reduce cost to service providers.
[0004] Several tunable laser technologies have been investigated
over the last decade including distributed feedback Bragg (DFB)
grating lasers, distributed Bragg reflector (DBR) laser,
vertical-cavity surface-emitting lasers (VCSELs), and external
cavity lasers (ECLs). Tunable DFB lasers are in general realized by
changing the refractive index of the internal grating either
thermally or electrically by which the operating wavelength can be
tuned. Although DFB lasers are well behaved and very reliable, they
have the disadvantages of low output power and very limited
wavelength tuning range (i.e., a range of about 5.0 nm).
[0005] DBR lasers have similar structures to DFB lasers but have a
grating section separated from an active section. By injecting
current into the grating region to change the refractive index, the
effective length of the laser cavity is changed and therefore the
lasing wavelength. DBR lasers have some advantages such as fast
tuning speed, relatively large tuning range (about 40 nm), but
suffer drawbacks of wavelength instability, broad linewidth, and
large device size.
[0006] VCSELs have a gain layer sandwiched by two DBR mirrors. The
light is emitted from the top surface of the mirror instead of the
edge as in the conventional edge-emitting lasers. This gives VCSELs
the biggest advantage in that the laser output can be coupled to a
fiber very easily and cost-effectively. The wavelength tuning of
VCSELs is realized by injecting current to a
micro-electromechanical-systems (MEMS) cantilever integrated with
the top DBR mirror thereby changing the cavity thickness. The use
of MEMS tends to limit the tuning speed of the device within the
microsecond range. However, the main disadvantage of VCSELs is that
they tend to have low output power (i.e., on the order of about
hundreds of microwatts or lower). Another disadvantage of
traditional VCSELs is their operational wavelengths are limited to
short wavelengths of about 850 nm to about 1300 nm.
[0007] ECLs basically utilize an external reflector such as a
diffracting grating or MEMS mirror to form an external cavity. By
mechanically adjusting the external cavity length, the lasing
wavelength can be tuned over a wide range. ECLs can also provide
high output power and narrow linewidth. However, most of current
ECLs are very large, costly, sensitive to environmental changes,
and operate with a slow tuning speed on the order of milliseconds.
In addition, current ECL designs tend not to be applicable to
large-scaled integration.
SUMMARY OF THE INVENTION
[0008] The present invention is directed to an improved tunable
wavelength light source for use in optical communications systems
that facilitates high speed, broad band wavelength tuning, is
mechanically simple, scaleable and reliable, and facilitates
monolithic integration of optical components. The novel wavelength
tunable light source of the present invention preferably comprises
a semiconductor laser diode optically coupled to a tunable
wavelength selective external cavity. Preferably, the external
cavity comprises a waveguide-coupled optical resonator that
includes an optical resonator, or multiple optical resonators,
either horizontally or vertically coupled to adjacent semiconductor
waveguides. The optical resonator, which is preferably formed from
electro-optic materials, primarily functions as a wavelength
selector and can be in the form of a disk, ring or other closed
cavity geometries. In operation, light signal emissions from one
end of the semiconductor laser may be coupled into a first
waveguide using an optical lens or butt-joint method, and then
transferred to a second waveguide through evanescent coupling
between the waveguides and the optical resonator when the
wavelength of the light signal is at a resonance frequency of the
resonator. A mirror system or high reflection coating at the end of
the second waveguide reflects the light signal back into the
system. A closed optical cavity is realized as a result.
[0009] Lasing can be achieved in the light source of the present
invention when the optical gain overcomes the optical loss in the
closed cavity for a certain resonance wavelength. The resonance
wavelength is preferably tunable by changing the resonance
condition of the optical resonator through current or reversed
biased voltage. For a given material and structure, the wavelength
tunable range tends to be determinable by the size of the
resonator. The use of multiple optical resonators advantageously
tends to reduce the lasing threshold and tends to provide higher
power output.
[0010] When compared to traditional ECL designs, the wavelength
tunable laser of the present invention tends to possess several
advantages. For instance, the present invention tends to be smaller
in size because of its use of compact waveguide-coupled optical
resonators as the external cavity. The tunable laser of the present
invention also tends to have much faster tuning speeds because the
tuning mechanisms use electro-optic effects or carrier effects
instead of thermal or MEMS effects. Lastly, the semiconductor laser
diode and the optical resonators forming the tunable laser of the
present invention may be fabricated on the same substrate and,
thus, facilitate monolithic integration.
[0011] In preferred embodiments, the semiconductor laser diode has
one end facet anti-reflection coated from which light emissions are
coupled into the first waveguide of the waveguide-coupled optical
resonator using a high numeric aperture lens. The two coupling
waveguides of the waveguide-coupled optical resonator are
preferably designed, for example, using a tapered structure to take
advantage of mode matching between the waveguide and optical
resonators in the interaction region of the device. A high
reflection coating is applied at one end of the second waveguide
forming a closed optical cavity. As a result, the power transferred
from the first waveguide through the optical resonator(s) can be
totally reflected back into the system. When one of the cavity
modes (represented by a particular wavelength or frequency) is at
resonance with the optical resonator(s), i.e., the wavelength is
one of the resonance wavelengths of the optical resonator, and has
enough optical gain through current injection into the laser diode
to compensate for the optical loss encountered in the closed
cavity, lasing from the other end facet of the laser diode may be
achieved at this particular wavelength. The resonance wavelength of
the optical resonators may be adjusted or tuned by applying voltage
or injecting current to the resonator. Therefore, the lasing
wavelength of the tunable laser of the present invention may be
tuned. The tuning range is determined by the free spectral range of
the optical resonators.
[0012] In other preferred embodiments, a mirror with 100%
reflectivity placed right after the end facet of the second
waveguide reflects the transferred power back into the system. This
mirror could be movable to adjust the distance between the mirror
and the waveguide and, thus, change the length of the cavity.
[0013] In yet other preferred embodiments, the coupling waveguides
may include an active medium. By injecting current into one or more
sections of the coupling waveguides, for example, at the end of the
second waveguide, additional optical gain is provided for the light
and lower threshold lasing can be achieved.
[0014] A significant advantage of the tunable laser of the present
invention, as compared to other ECL designs, is that monolithic
integration tends to be possible. For example, the laser diode is
fabricated first on an InP substrate. The optical resonators and
coupling waveguides are then fabricated on the same substrate by
using regrowth methods and other standard semiconductor fabrication
processes. The emission of the laser diode is coupled into the
first coupling waveguide through butt-joint methodology. In the
same way, other optical devices can be integrated onto the same
substrate and more complex functions can be realized. For example,
an electro-absorption modulator may be fabricated right after the
tunable laser wherein the output from the tunable laser may be
modulated or another waveguide-coupled optical resonator may be
coupled to the outputs from different tunable lasers to multiplex
these outputs.
[0015] Other aspects and features of the present invention will
become apparent from consideration of the following description
taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] FIG. 1 is a schematic view of an edge-emitting Fabry-Perot
laser diode with a typical pin wafer structure with two end facets
serving as the two reflective mirrors of a laser cavity by cleaving
the laser chip.
[0017] FIG. 2A is a schematic view of a waveguide-coupled optical
resonator system with two waveguides horizontally coupled to a
resonator.
[0018] FIG. 2B is a cross-sectional view of the waveguide-coupled
resonator system shown in FIG. 2A and taken along line 2B-2B.
[0019] FIG. 3A is a schematic view of a waveguide-coupled optical
resonator system with two waveguides positioned below and
vertically coupled to a resonator.
[0020] FIG. 3B is a cross-sectional view of the waveguide-coupled
resonator system shown in FIG. 3A and taken along line 3B-3B.
[0021] FIG. 3C is a cross-sectional view of an alternative
waveguide-coupled resonator system with two waveguides positioned
above and vertically coupled to a resonator.
[0022] FIG. 4A is a schematic view of a waveguide-coupled optical
resonator system with two waveguides positioned above and below and
vertically coupled to a resonator.
[0023] FIG. 4B is a cross-sectional view of the waveguide-coupled
resonator system shown in FIG. 4A and taken along line 4B-4B.
[0024] FIG. 5 is a graph showing a typical resonance spectrum of a
resonator made from typical semiconductor materials with a 10 .mu.m
diameter.
[0025] FIG. 6A is a schematic view of a first embodiment of a
tunable laser of the present invention including a laser diode
coupled to a waveguide-coupled optical resonator system with two
waveguides horizontally coupled to an optical resonator.
[0026] FIG. 6B is a schematic view of an alternative to the first
embodiment of the tunable laser of the present invention shown in
FIG. 6A.
[0027] FIG. 7 is a graph showing the effect of imbalanced coupling
on the output power of a lossless waveguide-coupled resonator
system having a single optical resonator.
[0028] FIG. 8 is a graph showing the improvement in output power
result from the use of multiple resonators in a lossless
waveguide-coupled resonator system having imbalanced coupling.
[0029] FIG. 9 is a graph showing the output power of a
waveguide-coupled resonator system with optical losses and
imbalanced coupling for different numbers of optical resonator,
wherein the loss coefficient is 6.0 cm.sup.-1 in the waveguide and
5.0 cm.sup.-1 in the resonator.
[0030] FIG. 10 is a graph showing the output power of a lossy
waveguide-coupled resonator system with imbalanced coupling for
different numbers of optical resonator, wherein the loss
coefficient in the waveguide is 6.0 cm.sup.-1 and 2.0 cm.sup.-1 in
the resonator.
[0031] FIG. 11 is a graph showing effective reflectivity as a
function of the number of resonators in a waveguide-coupled
resonator system with imbalanced coupling and different optical
loss coefficients.
[0032] FIG. 12A is a schematic view of a second embodiment of a
tunable laser of the present invention similar to that shown in
FIG. 6A except for the use of multiple optical resonators.
[0033] FIG. 12B is a schematic view of an alternative to the second
embodiment of a tunable laser of the present invention shown in
FIG. 12A and similar to that shown in FIG. 6B except for the use
multiple optical resonators.
[0034] FIG. 13A is a schematic view of a typical pin wafer
structure for an optical resonator of the present invention based
on an InGaAsP/InP material system.
[0035] FIG. 13B is a graphical representation of the energy bandgap
of the pin wafer structure shown in FIG. 13A.
[0036] FIG. 13C is a graphical representation of the refractive
index profile of the pin wafer structure shown in FIG. 13A.
[0037] FIG. 14 is a graph showing changes in refractive index due
to the carrier effects as a function of injected current and
current density for a 10 .mu.m diameter resonator based on the pin
wafer structure shown in FIG. 13A and a working wavelength of 1.55
.mu.m.
[0038] FIG. 15 is a graph showing changes in refractive index
changes due to Pockels and Franz-Kedysh effects as a function of an
electrical field due to an applied reversed bias voltage for a 10
micron diameter resonator based on the pin wafer structure shown in
FIG. 13A and a working wavelength of 1.551 .mu.m.
[0039] FIG. 16A is a schematic view of a third embodiment of a
tunable laser of the present invention similar to that shown in
FIG. 6A except the waveguides are vertically coupled to the optical
resonator.
[0040] FIG. 16B is a schematic view of an alternative to the third
embodiment of a tunable laser of the present invention shown in
FIG. 16A and similar to that shown in FIG. 6B except the waveguides
are vertically coupled to the optical resonator.
[0041] FIG. 17A is a schematic view of a fourth embodiment of a
tunable laser of the present invention similar to that shown in
FIG. 16A except the waveguides, which are vertically coupled to the
optical resonator, are positioned above and below the
resonator.
[0042] FIG. 17B is a schematic view of an alternative to the fourth
embodiment of a tunable laser of the present invention shown in
FIG. 17A and similar to that shown in FIG. 16B except the
waveguides, which are vertically coupled to the optical resonator,
positioned above and below the resonator.
[0043] FIG. 18A is a schematic view of a fifth embodiment of a
tunable laser of the present invention similar to that shown in
FIG. 16A except for the use of multiple optical resonators.
[0044] FIG. 18B is a schematic view of an alternative to the fifth
embodiment of a tunable laser of the present invention shown in
FIG. 18A and similar to that shown in FIG. 16B except for the use
multiple optical resonators.
[0045] FIG. 19A is a schematic view of a sixth embodiment of a
tunable laser of the present invention similar to that shown in
FIG. 17A except for the use of multiple optical resonators.
[0046] FIG. 19B is a schematic view of an alternative to the sixth
embodiment of a tunable laser of the present invention shown in
FIG. 19A and similar to that shown in FIG. 17B except for the use
multiple optical resonators.
[0047] FIG. 20A is a schematic view of a seventh embodiment of a
tunable laser of the present invention using a monolithic
integration process in which the laser diode and the
waveguide-coupled resonator are grown on the same substrate.
[0048] FIG. 20B is a schematic view of an alternative to the
seventh embodiment of a tunable laser shown in FIG. 20A with a
vertical coupling configuration.
[0049] FIG. 20C is a schematic view of another alternative to the
seventh embodiment of a tunable laser shown in FIG. 20A with a
vertical coupling configuration having waveguides positioned above
and below the resonator.
[0050] FIG. 21A is a schematic view of an eighth embodiment of a
tunable laser of the present invention using a monolithic
integration process in which the laser diode and the
waveguide-coupled resonator are grown on the same substrate and are
monolithically integrated with an electro-absorption modulator.
[0051] FIG. 21B is a schematic view of a ninth embodiment of a
tunable laser of the present invention in which an array of tunable
lasers are monolithically integrated with a mutliplexer which is
also based on waveguide-coupled optical resonators.
[0052] FIG. 22A is a schematic view of an alternative to the eighth
embodiment of a tunable laser shown in FIG. 21A in which an
amplifier is monolithically integrated into the system adjacent the
electro-absorption modulator.
[0053] FIG. 22B is a schematic view of another alternative to the
eighth embodiment of a tunable laser shown in FIG. 21A in which
amplifiers are monolithically integrated into the waveguides of the
system.
DETAILED DESCRIPTION OF THE INVENTION
[0054] Referring in detail to the figures, a wavelength tunable
laser of the present invention, as shown, combines a semiconductor
laser diode with a waveguide-coupled optical resonator. The
waveguide-coupled optical resonator serves as a wavelength
selective, external cavity to realize a tunable laser by applying
voltage or injecting current to change the resonance wavelength of
the resonator(s).
[0055] Turning to FIG. 1, a multi-layer semiconductor wafer
structure of a laser diode 10 of the present invention is shown.
The laser diode 10 preferably comprises an active or guiding layer
12 sandwiched between two cladding layers 13 and 14 on a substrate
15. The active layer (guiding) 12 is preferably non-doped or
insulated and has a higher refractive index (n) and a smaller
bandgap than the two cladding layers 13 and 14. The two cladding
layers 13 and 14 are preferably highly doped with either n-type or
p-type doping in order to reduce contact resistance. The substrate
15 is preferably more highly doped with either n-type or p-type
doping. This structure 10 provides good confinement for both
photons and carriers as a result. Electrodes or electrical contacts
16 and 17 are formed on the top and bottom of the structure 10 to
apply voltage or inject current. In a preferred construction, the
structure 10 includes a n-doped substrate 15, a n-doped first
cladding layer 13 positioned on top of the substrate 15, a
non-doped guiding layer 12 positioned on top of the first cladding
layer 13, a p-doped second cladding layer 14 positioned on top of
the guiding layer 12, a negative electrical contact 17 positioned
on the bottom of the substrate 15 and a positive electrical contact
16 positioned on top of the second cladding layer 14.
[0056] The wafer structure 10 is preferably cleaved along its
crystal plane forming two end facets 18 and 19. The end facets 18
and 19 typically act as mirror surfaces that reflect light beams
back and forth within the active layer 13; wherein the end facets
18 and 19 and active layer 13 form a Fabry-Perot (F-P) cavity.
However, as discussed in greater detail below, when incorporated as
part of a tunable laser cavity of the present invention, one of the
end facets of the laser diode would preferably be coated with an
anti-reflection (A.R.) coating. The A.R. coating allows light to be
spontaneously emitted from the A.R. coated end facet when current
is injected into the laser diode.
[0057] The resonance wavelength of a typical F-P cavity is given by
1 q = c 2 qnl , q = 1 , 2 . . . ( 1 )
[0058] where c is the light speed in free space, n is the
refractive index of the active medium (layer 12), and l is the
cavity length. The optical loss comes from the absorption of the
active medium and the partial reflections at the two end facets.
The loss coefficient per round trip for the light is given by 2 = s
+ m = s + m1 + m2 = s + 1 2 l ln 1 R 1 R 2 ( 2 )
[0059] where .alpha..sub.s is the absorption loss coefficient,
.alpha..sub.m is the mirror loss coefficient due to the partial
reflections and R.sub.1, R.sub.2 are the power reflectivities at
the two end facets. At the semiconductor-air interface, the
reflectivity is usually given by 3 R = ( n - 1 n + 1 ) 2 .
[0060] For III-V semiconductor materials, the refractive index (n)
is about 3.4, therefore R.apprxeq.30%. See, e.g., Advanced III-V
Compound Semiconductor Growth, Processing and Devices (Materials
Research Society Symposium Proceedings, Vol. 240 (Pearton et al.
(Ed.)). When one of the resonance wavelengths of this cavity has a
gain in the active medium large enough to overcome the optical loss
incurred over a round trip through the cavity, lasing oscillation
may result at this particular wavelength.
[0061] For use in optical transmission systems based on fiber
optics, the useful lasing wavelengths, or optical fiber windows,
tend to be 1.3 and 1.55 .mu.m because of the minimal dispersion
losses at 1.3 .mu.m and minimal absorption losses at 1.55 .mu.m.
Thus, in order to emit light at these wavelengths the laser diode
10 of the present invention is preferably formed from InP material.
However, for other applications the laser diode may be formed from
other material systems. For example, for use in short distance
communications across copper cables, the laser diode may be formed
from an InGaAsP/InP material system, which has a lasing wavelength
at about 860 nm.
[0062] Turning to FIGS. 2A, 2B, 3A, 3B, 3C, 4A, and 4B,
illustrative embodiments of the waveguide-coupled optical
resonators 20, 30 and 40 of the present invention are shown. As
depicted, the multi-layer semiconductor wafer structures of the
waveguide-coupled optical resonators 20, 30, and 40 include a
circular or disk-shaped resonator cavity 22, 32 and 42 and two
adjacent waveguides 24 and 26, 34 and 36, and 44 and 46,
respectively, formed as a single chip structure. Preferably, the
waveguides, which are either horizontally or vertically coupled to
the resonators through evanescent wave coupling, are tapered in
structure, wherein the ends are thicker than a central portion. The
tapered structure of the waveguides enables the waveguide-coupled
optical resonators to take advantage of mode (i.e., wavelength)
matching between the waveguides and the resonator at an interaction
region 27, 37 and 47 of the chip.
[0063] Referring to FIGS. 2A and 2B, a horizontally coupled
waveguide-coupled resonator 20 is shown to preferably comprise a
resonator 22 and first and second waveguides 24 and 26 formed on
top of a highly n-doped substrate 21, wherein the waveguides 24 and
26 are spaced apart from the resonator 22 across predetermined
coupling gaps 23 and 25. The resonator 22 and waveguides 24 and 26
preferably include a first layer L1, which is preferably a n-doped
cladding layer, positioned on top of the substrate 21, a second
layer L2, which is preferably a non-doped active or guiding layer,
positioned on top of the first layer L1, and a third layer L3,
which is preferably a p-doped cladding layer, positioned on top of
the second layer L2. A positive electrode contact 28 is positioned
on top of the resonator 22 and a negative electrode contact 29 is
positioned on the bottom of the substrate 21.
[0064] The horizontally coupled waveguide-coupled optical resonator
20 may be formed using electron beam (e-beam) lithography and
standard semiconductor fabrication processes, such as
plasma-enhanced chemical vapor deposition (PECVD), reactive ion
etching (RIE), and inductively coupled plasma (ICP) etching. The
coupling between the resonator 22 and the waveguides 24 and 26 is
controlled by varying the size of the gaps 23 and 25 between the
waveguides 24 and 26 and the resonator 22. The gap size is
preferably small enough to enable evanescent coupling, which occurs
through the evanescent wave of guided light. The evanescent wave is
the tail of the guided light that extends beyond the waveguide
layer as the light propagates along the waveguide. The tail decays
as the distance away from the center of the guiding layer
increases, and becomes zero at infinite. If two waveguides are
placed sufficiently close together, the tail of the light guided in
a first waveguide will overlap the adjacent guiding layer enabling
the light signal to be coupled into the second waveguide.
[0065] The gap size is also related to the coupling efficiency
between the waveguide and the resonator. Theoretically, the value
of the coupling efficiency is not critical in order to have 100%
power transfer. As discussed in greater detail below, as long as
the coupling is balanced and the resonator is optically lossless,
100% power transfer is possible when the wavelength of the light
signal is at resonance, even if the coupling efficiency is very
small. However, in reality, optical losses do exist in the
resonator. If the coupling efficiency is too small, the optical
power transferred into the resonator will disappear after it
travels a very short distance and, as a result, may not reach the
other coupling or interaction region. Thus, a certain level of
coupling efficiency, which is basically determinable by gap size
and waveguide structure, is needed. The smaller the gap size, the
larger the coupling efficiency tends to be. A gap size of 0.2 um
accompanied by the tapered waveguide structures of the present
invention, tends to provide a coupling efficiency of 2-3%. With
current fabrication technologies, such as e-beam lithography, a gap
size as small as 0.1 um may be achieved. Therefore, in order to
enable evanescent coupling and sufficient coupling efficiency, the
size of the coupling gaps 23 and 25 is preferably about 0.1-0.2
microns. As fabrication technologies advance, a gap size smaller
than 0.1-0.2 microns may be more desirable.
[0066] Turning to FIGS. 3A and 3B, a vertical coupling
waveguide-coupled optical resonator 30 is shown to preferably
include a resonator 32 and first and second waveguides 34 and 36
formed on top of a patterned polymer wafer 33 positioned on top of
a transfer substrate 31. The waveguides 34 and 36, which are formed
in the same layer, preferably include a first layer L1, which is
preferably a non-doped cladding layer, positioned on opposite sides
and on top of the polymer wafer 33 and a second layer L2, which is
preferably a non-doped guiding or active layer, positioned on
opposite sides of the polymer wafer 33 and on top of the first
layer L1. The resonator 32 preferably includes a third layer or
separation layer L3, which is preferably a n-doped cladding layer,
positioned on top of the second layer L2 and a top portion of the
polymer wafer 37, a fourth layer L4, which is preferably a
non-doped guiding or core layer, positioned on top of the third
layer L3, and a fifth layer L5, which is preferably a p-doped
cladding layer, positioned on top of the fourth layer L4. A
negative electrode contact 39 is preferably deposited in a recess
35 formed in the top of the polymer wafer 33 adjacent the third
n-doped cladding layer L3. A positive electrode contact 38 is
deposited on top of the fifth p-doped cladding layer L5.
[0067] FIG. 3C provides an alternative vertical coupling geometry
wherein the waveguide-coupled optical resonator 30' preferably
includes first and second waveguides 34' and 36' positioned on top
of a resonator 32'. Specifically, the waveguide-coupled optical
resonator 30' includes a positive electrode contact 39' deposited
on top of a transfer substrate 31'. The resonator 32' preferably
includes a first layer L1, which is preferably a p-doped cladding
layer, positioned on top of the positive electrode contact 39', a
second layer L2, which is preferably a non-doped guiding or core
layer, positioned on top of the first layer L1, and a third or
separation layer L3, which is preferably a n-doped cladding layer,
positioned on top of the second layer L2. A negative electrode
contact 35' is preferably deposited in a recess 35' formed in the
top of the third layer L3. The waveguides 34' and 36', which are
formed in the same layer, preferably include a fourth layer L4,
which is preferably a non-doped guiding layer, positioned on
opposite sides of the negative electrode 38' and on top of the
third layer L3, and a fifth layer L5, which is preferably a
non-doped cladding layer, positioned on top of the fourth layer
L4.
[0068] FIGS. 4A and 4B provide another alternative vertical
coupling geometry wherein first and second waveguides 44 and 46 of
the waveguide-coupled optical resonator 40 are formed in different
layers, i.e., L2 versus L6; one positioned underneath a resonator
42 and the other positioned above the resonator 42. As shown in
FIG. 4B, the waveguide-coupled optical resonator structure 40
comprises a transfer substrate 41 upon which a patterned polymer
wafer 43 is positioned. The first waveguide 44 includes a first
layer L1, which is preferably a non-doped cladding layer,
positioned on top of a side portion of the polymer wafer 43, and a
second layer L2, which is preferably a non-doped guiding layer,
positioned on top of the first layer L1. The resonator 42
preferably includes a third layer or separation layer L3, which is
preferably a n-doped cladding layer, positioned on top of the
second layer L2 and a top portion of the polymer wafer 43, a fourth
layer L4, which is preferably a non-doped guiding or core layer,
positioned on top of the third layer L3, and a fifth or separation
layer L5, which is preferably a p-doped cladding layer, positioned
on top of the fourth layer L4. The second waveguide 46 preferably
includes a sixth layer L6, which is preferably a non-doped guiding
layer, positioned on top of the fifth layer L5 on a side opposite
the first waveguide 44, and a seventh layer L7, which is preferably
a non-doped cladding layer, positioned on top of the sixth layer
L6. A negative electrode contact 49 is preferably deposited in a
recess 45 formed in the polymer wafer 43 adjacent the third n-doped
cladding layer L3. A positive electrode contact 48 is deposited on
top of the fifth p-doped cladding layer L5.
[0069] For the vertical coupling waveguide-coupled optical
resonators 30, 30' and 40 of the present invention, the coupling
tends to be controlled by varying the thickness of the separation
layer, i.e. n-doped cladding layer L3 in FIGS. 3B and 3C and
n-doped and p-doped cladding layers L3 and L5 in FIG. 4B, which can
be precisely formed through epitaxial growth. As a result, the
tolerances for vertical coupling geometry tends to be much higher
than the tolerances for horizontal coupling geometry. Because the
tolerances for vertical coupling geometry are not as tight as those
for horizontal coupling geometry, vertical coupling geometry can
advantageously be realized using traditional photolithography
techniques, which are more efficient than e-beam lithography
techniques.
[0070] In addition, the layered structures of the vertical coupling
geometry may be formed using polymer, direct or anodic wafer
bonding techniques, which enable metal electrode contacts to be
deposited on or between layers. Polymer wafer bonding, for
instance, enables bonding of two different wafers together by using
an organic polymer as the intermediate medium. Compared with other
bonding methods, polymer wafer bonding is simpler and requires
relatively lower processing temperatures. The polymer may be any
commercial polymer used for bonding. Preferably, Benzocyclobutenes
(BCBs) polymers, which are a relatively new class of organic
polymers, are used in the layer structures of the present
invention.
[0071] To form the structures shown in FIGS. 3B and 4B, a layer of
SiO.sub.2, about 400 nm thick, is first deposited as the etching
mask on a patterned epi-wafer 33 and 43. Conventional optical
lithography plus standard semiconductor fabrication processes are
then used to make the coupling waveguide(s) 34, 36 and 44 on the
wafer 33 and 43. Metal is then deposited on the surface of the
wafer 33 and 43 to from an Ohmic contact 39 and 49. Next, BCB is
spun on the bottom of the patterned wafer 33 and 43 and a transfer
substrate 31 and 41, which is preferably different from the
epi-wafer substrate. The patterned wafer 33 and 43 is then flipped
over and placed down onto the transfer substrate 31 and 41. The two
wafers are tightened together. Next, the combined wafer is put into
a N.sub.2 filled furnace. The temperature is raised to 250.degree.
C. and the wafer is baked for about an hour, and then allowed to
cool down. After being fully cured, the BCB layer acts as glue and
can bond the two wafers together very tightly. The thickness of the
BCB layer is chosen to be thick enough to prevent optical leakage
into the transfer substrate 31 and 41. However, if it is too thick,
it is difficult to get a good facet quality after cleaving. After
the wafer is removed from the furnace, the epi-wafer's substrate is
removed using selective wet etching. The resonator 32 and 42 is
then fabricated, using standard semiconductor fabricating
processes, on the wafer 33 and 43 and is well-aligned with the
coupling waveguides 34, 36 and 44. Lastly, metal is deposited on
the surface of the resonator 32 and 42 to form an Ohmic contact 38
and 48. If the coupling waveguides 44 and 46 are on different sides
of the resonator 42, the second coupling waveguide 46 is then
fabricated on the resonator 42 and is well aligned to the resonator
42.
[0072] Referring to FIG. 3C, the layered structure is preferably
formed by direct or anodic wafer bonding methods. Direct wafer
bonding utilizes surface attraction forces by putting two
ultra-cleaned wafer surfaces together with a certain pressure
and/or high temperature annealing process. Anodic wafer bonding
basically occurs by applying an electrical field across the two
wafers.
[0073] In operation, light beams tend to propagate inside the
resonators 22, 32 and 42 along the circumference of the resonators
22, 32 and 42 by total reflections in what is commonly referred to
as the "Whispering-Gallery" mode. Such a propagation mode usually
has a very high Q value due to the strong mode confinement and low
optical loss in the cavity. The mode Q value describes the optical
mode loss in a cavity, wherein a high Q value corresponds to a
lower loss, and is defined as 4 Q = res ( 3 )
[0074] where .lambda..sub.res is the resonance wavelength of the
resonator, .delta..lambda. is the full resonance linewidth at
half-maximum resonance. FIG. 5 shows a typical resonance spectrum
of a resonator with a 10 .mu.m diameter made from typical
semiconductor materials corresponding to a center working
wavelength of 1500 nm. From FIG. 5, we can see that the spectrum
has a free spectral range (FSR) of 20 nm and the Q value is about
5000, for a resonance wavelength of about 1550 nm and a resonance
linewidth of about 0.31 nm. The FSR describes the separation
between two adjacent resonances. In wavelength domain, FSR is given
by 5 m 2 2 Rn ( 4 )
[0075] where .lambda..sub.m is the center-working wavelength and R
is the resonator radius. To increase the FSR, smaller resonators
are preferred.
[0076] With coupling waveguides, the optical resonator can have
versatile functions. However, the main function of the
waveguide-coupled optical resonators 20, 30 and 40 of the present
invention is as a wavelength selector. Referring to FIGS. 2A, 3A
and 4A, input light beams with different wavelengths
.lambda..sub.1, .lambda..sub.2, .lambda..sub.3, . . . enter the
first waveguide 24, 34 and 44 and are coupled from the first
waveguide 24, 34 and 44 into the resonator 22, 32 and 42 either
horizontally or vertically at the interaction region 27, 37 and 47
through the evanescent wave (i.e., evanescent coupling) of the
light beam when the wavelength of the light beam is at a resonance
wavelength or frequency of the resonator 22, 32 and 42; for
instance, .lambda..sub.1. The light beam with wavelength
.lambda..sub.1 then circulates inside the resonator 22, 32 and 42,
and builds up to large intensities. At the same time, it is coupled
out of the resonator 22, 32 and 42 into the second waveguide 26, 36
and 46 through the evanescent wave of the light beam at the
interaction region 27, 37 and 47. The rest of the input light
signals, i.e., .lambda..sub.2, .lambda..sub.3, . . . , just pass
through and exit the other end of the first waveguide 24, 34 and
44. Resonance wavelength tuning can easily be achieved by either
applying a voltage or injecting current to the resonator 22, 32 and
42. In this way, the optical power associated with a particular
wavelength can be transferred from one side of the
waveguide-coupled optical resonator 20, 30 and 40 to the other
side. In an ideal case, 100% of the optical power associated with a
selected wavelength is transferred from one side of the
waveguide-coupled optical resonator to the other. Realization of
100% power transfer, however, tends to require that the following
three conditions be satisfied:
[0077] (1) The wavelength is at resonance;
[0078] (2) There is no optical loss in the resonator cavity;
and
[0079] (3) The coupling on each side should be equal, i.e., the
coupling is balanced, and lossless.
[0080] Referring to FIG. 6A, a first illustrative embodiment of a
wavelength tunable laser 100a of the present invention is shown to
include a semiconductor laser diode 110, with opposing end facets
118 and 119, that is optically coupled through a coupling lens 111,
having a high numeric aperture (N.A.), to a waveguide-coupled
optical resonator 120. The laser diode 110, which is formed from
broad gain spectrum material, has substantially the same structure
as the laser diode 10 shown in FIG. 1 with the exception of the end
facet 119 facing the waveguide-couple resonator 120 being coated
with an A.R. coating. The waveguide-coupled resonator 120, which
has substantially the same structure as the waveguide-coupled
resonator 20 shown in FIGS. 2A and 2B, includes a circular or
disk-shaped resonator cavity 122 with an electrode contact 128
shown positioned on top of the resonator 122. An additional
electrode contact (not shown) may be positioned below the resonator
122 as shown in FIG. 2B. The resonator 122 is spaced apart from
first and second waveguides 124 and 126 across coupling gaps 123
and 125. The waveguides 124 and 126, which preferably include a
tapered structure, are positioned in parallel orientation on
opposite sides of the resonator 122. The tunable laser 100a further
includes a collimated lens 152 and a mirror 150, preferably with
100% reflectivity, positioned adjacent to one end facet 129 of the
second waveguide 126.
[0081] In operation, current is applied to the laser diode 110 at a
level below the lasing threshold of the laser diode 110 to generate
spontaneous light emissions from the A.R. coated end facet 119 of
the laser diode 110. The light emissions are coupled into the first
waveguide 124 of the waveguide-coupled resonator 120 through the
coupling lens 111. The light propagates through the first waveguide
124 and reaches the interaction area 127 of the first waveguide 124
and the resonator 122. Light having a wavelength associated with a
resonance frequency of the resonator 122 is horizontally coupled
into the resonator 122 through evanescent coupling across the first
coupling gap 123. As the light propagates within the resonator 122,
the light is horizontally coupled into the second waveguide 126
through evanescent coupling across the second coupling gap 125 at
the interaction area 127 of the second waveguide 126 and the
resonator 122. Thus, a certain portion of the input optical power
from the laser diode 110 is transferred from the first coupling
waveguide 124 to the second coupling waveguide 126.
[0082] The collimated lens 152 right after the end facet 129 of the
second waveguide 126 converts the output of the second waveguide
126 into parallel light beams. The mirror 150 reflects the light or
optical power back into the second waveguide 126. Alternatively, as
shown in FIG. 6B, the light may be reflected back into the system
by a high reflection (H.R.) coating 154 applied to the end facet
129 of the second waveguide 126. The use of a H.R. coating
advantageously eliminates the need for additional optical elements
such as a mirror and lens.
[0083] The reflected light or optical power propagates back through
the waveguide-coupled resonator 120, i.e., the reflected light
propagates through the second waveguide 126 to the interaction area
127 where it is coupled into the resonator 122 and, as it
propagates within the resonator 122, it is coupled into the first
waveguide 124 at the interaction area 127. From the first waveguide
124, the light is coupled back into the laser diode 110. Thus, a
closed optical cavity is formed between the laser diode 110 and the
waveguide-coupled optical resonator 120.
[0084] By increasing the current injected into the laser diode 110
until the light associated with the particular resonance frequency
selected by the optical resonator 122 has enough gain to compensate
or overcome the optical losses encountered during the light's
propagation through the closed cavity, the light becomes lasing and
is output from the other end facet 118 of the laser diode 110.
Further increases of the current injected into the laser diode 110
will increase the lasing output power of the tunable laser system
100a and 100b of the present invention. The level of the injected
current, however, remains below the lasing threshold for the laser
diode, but above the lasing threshold of the tunable laser
system.
[0085] In order to tune the lasing frequency of the tunable laser
system 100a and 100b, voltage or current may be applied to the
optical resonator 122. As discussed in detail below, the applied
voltage or current changes the refractive index of the material in
the resonator 122 due to electro-optical effects or carrier
effects, which in turn changes the resonance frequency of the
resonator 122. Changing the resonance frequency of the resonator
122, changes the lasing frequency (wavelength) of the tunable laser
system 100a and 100b. Advantageously, the lasing frequency
(wavelength) may be continuously changed or tuned by continuously
changing the voltage or current applied to the resonator 122.
Tuning speeds tend to be on the order of nanoseconds (e.g., 1-100
ns) or faster as a result.
[0086] The waveguide-coupled resonator 120 along with the mirror
150 or H.R. coating 154 provide an effective reflection for the
laser diode 110 that is similar to the reflection provided by the
end facets of a conventional laser diode in typical use, and may be
equivalent to an effective facet mirror. If P.sub.i is the power of
the light coupled into the waveguide-coupled resonator 120 and
mirror 150 system, P.sub.o is the output power of the light after
being reflected by the system. Effective reflectivity is defined as
6 R eff = P o P i ( 5 )
[0087] Preferably, effective reflectivity R.sub.eff of the system
is comparable to the effective reflectivity at the end facets of a
conventional laser diode, which is typically about 30%. However,
effective reflectivity R.sub.eff is dependent upon how much power
can be transferred between the two waveguides 124 and 126 of the
system, assuming that the light can be fully reflected back into
the system. In an ideal case, the three conditions for full power
transfer mentioned above are satisfied. In reality, however, any
fabrication error or material defect may cause the coupling between
the waveguides 124 and 126 and the resonator 122 to be imbalanced
and may introduce optical loss into the system.
[0088] Assuming that there is no optical loss in the waveguides 124
and 126 and the resonator 122, R.sub.eff=1 tends to be unachievable
when the coupling on each side is not balanced, i.e., c1.noteq.c2,
where c1 and c2 are the coupling coefficients between the resonator
122 and waveguides 124 and 126 across the coupling gaps 123 and
125. This effect is illustrated in FIG. 7. As depicted in FIG. 7,
100% power transfer tends to occur when c1=c2, but not when
c1.noteq.c2. Furthermore, the larger the imbalance, the lower the
percentage of power transferred. For example, if c1=0.02, c2=0.005,
then there is only about 60% power transferred even with no optical
loss in the system. For all cases shown in FIG. 7, the radius of
the resonator 122 is 5 .mu.m, the coupling waveguides 124 and 126
are tapered down to about 0.5 .mu.m adjacent the coupling or
interaction region 127, and the refractive index for the resonator
122 and waveguides 124 and 126 is 3.4.
[0089] As shown in FIG. 8, the use of multiple resonators instead
of a single resonator tends to improve system performance. FIG. 8
shows the results for lossless systems with imbalanced coupling,
i.e., c1=0.02, c2=0.005, and different numbers of resonators (N),
with all other parameters remaining the same as for the single
resonator case depicted in FIG. 7. When N=1, the percentage of
power transferred is about 60%. When N=2, the percentage of power
transferred increases to about 95%, assuming in this case a
distance between two adjacent resonators of preferably about 24
.mu.m, which ensures constructive interference between the
resonators. The preferred distance between resonators to ensure
constructive interference may be determined by calculating the
phase difference between the two adjacent resonators, which should
be equal to 2m.pi., m=0, 1, 2, . . . , where m is an integer. When
N=4, power transfer approaches 100%. This is not surprising if the
system is thought of as a grating. The more resonators, the higher
the order of the grating. The improvement of the performance of the
system as the number of resonators is increased is mainly due to
the constructive interference among the resonators. This can be
verified by the change in the response spectrum shape, which has a
much flatter passband and a faster rolloff.
[0090] In reality, however, such a system would include optical
losses. The percentage of power transferred for a system similar to
the system depicted in FIG. 8, except that loss coefficients in the
resonators of .alpha..sub.RES=5.0 cm.sup.-1 and in the coupling
waveguides of .alpha..sub.WG=6.0 cm.sup.-1 are assumed, is shown if
FIG. 9. As shown, the percentage of power transferred for a single
resonator drops to about 38%. The use of two resonators, however,
improves the percentage of power transferred to about 50%. A
further increase in the number of resonators, however, does not
tend to significantly improve the percentage of power transferred.
For example, where N=3, 4, 5, the percentage of power transferred
is very close to that of N=2. The lack of improvement in power
transfer due to the use of multiple resonators is because the
beneficial effect of the multiple resonators tends to be offset by
an increase in optical loss due to the existence of more
resonators.
[0091] In order to fully utilize the beneficial effect that
multiple resonators may have on the percentage of power transfer,
the optical loss due to the resonators is preferably minimized. The
percentage of power transferred for a system similar to the system
depicted in FIG. 9, except that the loss coefficient in the
resonators is decreased to 2.0 cm.sup.-1, is shown if FIG. 10. With
a lower loss coefficient for the resonator, the percentage of power
transferred in a single resonator system tends to be about 50%. The
percentage of power transferred tends to increase to about 70% for
N=2 and 75% for N=3, 4 and 5. Compared to FIG. 9, the improvement
is significant. Therefore, having low loss resonators in the system
is very advantageous in that it results in high reflectivity for
the laser diode. However, as the results for N=3, 4 and 5 indicate,
it is not necessary to have as many resonators as possible. As
FIGS. 9 and 10 indicate, two (N=2) resonators tends to be enough to
sufficiently improve the percentage of power transfer in a system.
As a result, a tunable laser device of the present invention may
advantageously be very compact.
[0092] Turning to FIG. 11, effective reflectivity is shown as a
function of the number of resonators in a system with imbalanced
coupling and different optical loss coefficients. As FIG. 11
indicates, when N>3 the change in effective reflectivity is
minimal. In order to have an effective reflectivity R.sub.eff of
about 30% or higher, it is preferable that the loss coefficient in
the resonator(s) is less than about 3 cm.sup.-1, which mainly
depends on the fabrication processes.
[0093] Referring to FIGS. 12A and 12B, additional illustrative
embodiments of the tunable laser 101a and 101b of the present
invention are shown to include multiple resonators 122.sub.i,
122.sub.ii, and 122.sub.iii instead of a single resonator. With the
exception of multiple resonators 122.sub.i, 122.sub.ii, and
122.sub.iii, the structure of these tunable lasers 101a and 101b
correspond to the structure of the tunable lasers 100a and 100b
shown in FIGS. 6A and 6B with like elements identified with the
same element numerals. Electrode contacts 128.sub.i, 128.sub.ii,
and 128.sub.iii are shown positioned on top of the resonators
122.sub.i, 122.sub.ii, and 122.sub.iii. A second set of electrode
contacts (not shown) are positioned below the resonators 122.sub.i,
122.sub.ii, and 122.sub.iii as shown in FIG. 2B. Although FIGS. 12A
and 12B show tunable lasers 101a and 101b utilizing three
resonators 122.sub.i, 122.sub.ii, and 122.sub.iii, one skilled in
the art would understand that a tunable laser of the present
invention may comprise two or more than three resonators. However,
according to the analysis presented above in regard to FIGS. 9, 10
and 11, two or three resonators may be sufficient to improve the
percentage of power transferred to a desirable level.
[0094] As noted above, wavelength tuning is realized in the tunable
lasers of the present invention by changing the resonance
wavelength, i.e., frequency, of the optical resonator. There are
basically two main alternative methods of electrically changing the
refractive index of a semiconductor, of which the optical resonator
of the present invention is composed, which results in a change in
resonance frequency of the resonator. The first method utilizes the
electro-optic effects that result when a voltage is applied to the
resonator. The second method utilizes the carrier effects resulting
from injecting current into the resonator. These effects are
described below in regard to a typical wafer structure for an
optical resonator 160 of the present invention shown in FIG.
13A.
[0095] The wafer structure of the optical resonator 160 shown in
FIG. 13A is basically the same as the wafer structure of the
semiconductor laser diode 10 shown in FIG. 1A, which provides the
possibility for monolithic integration of the components of the
tunable laser system of present invention. The structure preferably
includes a first cladding layer 162, which is preferably formed
from highly n-doped InP material, a second cladding layer 164,
which is preferably formed from highly p-doped InP material, and a
core or guiding layer 163, which is preferably formed from
non-doped InGaAsP material, sandwiched between the two cladding
layers 162 and 164. Where monolithic integration is unnecessary,
the resonator core may be formed from other materials such as
GaAs/AlGaAs, SiOxSi, polymers, and the like. All of the layers are
formed on top of a substrate 161, which is preferably formed from
more highly n-doped InP material. The cladding layers 162 and 164
are preferably about 1.0 .mu.m thick, while the guiding layer 163
is preferably about 0.4 .mu.m thick. FIGS. 13B and 13C illustrate
the energy bandgap structure and the refractive index distribution,
respectively, for the pin structure shown in FIG. 13A.
[0096] Basically, both applying voltage and injecting current will
induce a change in the effective refractive index of the optical
resonator 160, which in turn changes the resonance spectrum of the
resonator 160. In the resonator 160 of the present invention,
whispering-gallery modes (WGMs) dominate. These WGMs usually have
high Q values which are given by equation (3). The change in
refractive index needed for a half resonance linewidth shift of
.delta..lambda./2 may be estimated as follows. The resonance
wavelength of .lambda..sub.1 may be approximated from 7 2 L c 1 n =
2 m ( 6 a )
[0097] which, for a refractive index change of .DELTA.n, becomes 8
2 L c 1 + / 2 ( n + n ) = 2 m ( 6 b )
[0098] where L.sub.c is the circumference of the microdisk
resonator, n is the effective refractive index, and m is the
azimuthal index which describes the mode distribution along the
disk circumference. Combining equations (6a) and (6b) and solving
for .DELTA.n, the resulting equation becomes
.DELTA.n=m.lambda..sub.1/(2L.sub.cQ) (7)
[0099] Assuming a 10 .mu.m-diameter microdisk resonator, where
m=60, .lambda..sub.1=155 .mu.m, L.sub.c=.pi.d.apprxeq.31.4 .mu.m,
and Q.apprxeq.200, then from equation (7)
.DELTA.n=7.4.times.10.sup.-3. This refractive index change enables
a shift of the resonance wavelength of about
.delta..lambda./2.apprxeq.3.8 nm. However, as discussed above such
a small Q value is undesirable because the losses associated with
the optical resonator would be too large. Preferably, the
resonators of the present invention have high Q values, which, as
noted in the analysis above, advantageously results in a system
having high effective reflectivity (see FIGS. 9, 10 and 11).
Assuming Q.apprxeq.5000, from equation (7),
.DELTA.n=2.96.times.10.sup.-4. Such a change in refractive index
causes a resonance shift of
.delta..lambda./2=.lambda..sub.r(2Q)=0.- 16 nm.
[0100] The tuning range of the resonator, however, is determined by
the free spectral range (FSR), i.e., .DELTA..lambda.. The FSR of a
10 .mu.m-diameter microdisk is about 20 nm and should satisfy the
following equation 9 2 L c 1 + n = 2 m - 2 ( 8 )
[0101] which, for a shift of the resonance by .DELTA..lambda.,
becomes 10 2 L c 1 + ( n + n ) = 2 m ( 9 )
[0102] Combining equation (8) and equation (9) and solving for
.DELTA.n, results in 11 n = 1 + L c = 0.05 ( 10 )
[0103] .DELTA.n is positive because a red shift of resonance is
assumed. The carrier effects and electro-optic effects are
calculated as follows to estimate how much current or voltage is
needed for such a change in refractive index.
[0104] There are basically three carrier effects that are
responsible for the refractive index change, i.e., band filling,
bandgap shrinkage and free carrier absorption. FIG. 14 shows
refractive index change .DELTA.n as functions of injected current
density and injected current for a 10 .mu.m-diameter microdisk
resonator with a wafer structure as described in FIG. 13A while
considering all the carrier-induced effects, i.e., band-filling,
bandgap shrinkage and free carrier absorption. For a carrier
concentration of less than 10.sup.16, bandgap shrinkage effect can
be neglected as the interparticle spacing is too large (i.e.,
.chi.<.chi..sub.cr, where .chi. is the carrier concentration)
and bandfilling dominates, which yields a negative .DELTA.n.
However, bandgap shrinkage effect becomes important over the range
10.sup.16<.chi.<1- 0.sup.17 and approximately cancels the
bandfilling and free carrier absorption effects. For higher carrier
concentration, bandfilling and free carrier absorption effects
dominate and give a large negative .DELTA.n. From FIG. 14, in order
to achieve a refractive index change of 0.05, a 1.8.times.10.sup.6
mA/cm.sup.2 current density or 1.33 mA current for the 10
.mu.m-diameter microdisk resonator is needed. Note that in the
calculations the injected carrier density is obtained by 12 J = qdN
( 11 )
[0105] where .tau..apprxeq.1 ns is the carrier lifetime, q is
electron charge, N is the carrier concentration and d=0.4 .mu.m is
the microdisk core thickness. From FIG. 14, for a refractive index
change up to 10.sup.-1, a current density of only about
3.4.times.10.sup.6 mA/cm.sup.2 is needed. Since the size of
microdisk resonators could be a few microns, the driving current
will be about a few mAs. Such a small driving current is one of the
advantages of the tunable lasers of the present invention.
[0106] When a reversed bias voltage is applied to the pin
junctions, there will be an electrical field across the non-doped
region. Two major electro-optic effects associated with this
electrical field will change the refractive index of the material:
(1) Linear electro-optic (Pockels) effect; and (2)
Electrorefractive (Franz-Keldysh) effect. The Pockel effect is
polarization dependent and dominates at relatively low electrical
field intensity. The Franz-Keldysh effect will have the major
contribution when the working wavelength is very close to the
bandgap and at relatively high electrical field. With the wafer
structure described in FIG. 13, the refractive index change caused
by the two effects is shown in FIG. 15. From FIG. 15, the Pockel
effect tends to be larger than the Franz-Keldysh effect when the
electrical field E<2.times.10.sup.4V/cm. However, the
Franz-Keldysh effect tends to begin to dominate at higher field,
but will decrease if the field continues to increase. In order to
have a refractive index change on the order of 0.01, the required
electrical field tends to be about 10.sup.6 V/cm. If the thickness
of the non-doped layer is 0.4 .mu.m, the required voltage tends to
be about 40V (assuming the voltages dropped across the highly doped
layers and the interface between the electrode and the contact
layers (Ohmic contact) are relatively negligible.) Compared with
the carrier effects, the electro-optic effects tend to be less
efficient.
[0107] The foregoing description of the present invention has
illustrated the details of a wavelength tunable laser by combining
a semiconductor laser diode and tunable waveguide-coupled optical
resonators as the closed wavelength selective external cavity. It
will be appreciated by those of skill in the art that the
waveguides of the tunable waveguide-coupled optical resonators of
the present invention can be coupled to the optical resonator
either horizontally (see FIGS. 6A, 6B, 12A and 12B) or vertically.
FIGS. 16A and 16B, for example, illustrate other embodiments 102a
and 102b of the tunable laser of the present invention that are
very similar to the tunable lasers 100a and 100b shown in FIGS. 6A
and 6B, respectively, with the exception of the waveguides 134 and
136 being vertically, instead of horizontally, coupled to the
resonator 132. More particularly, the tunable lasers 102a and 102b
of the present invention include a semiconductor laser diode 110,
with opposing end facets 118 and 119, optically coupled through a
high N.A. coupling lens 111 to a waveguide-coupled resonator 130.
The laser diode 110 has substantially the same structure as the
laser diode 10 shown in FIG. 1 with the exception of the end facet
119 that is adjacent the waveguide-coupled optical resonator 130
being coated with an A.R. coating. The waveguide-coupled resonator
130, which has substantially the same structure as the
waveguide-coupled resonator 30 shown in FIGS. 3A and 3B, includes a
circular or disk-shaped resonator cavity 132 with an electrode
contact 138 deposited on top of the resonator 132. An additional
electrode contact (not shown) may be deposited below the resonator
132 as shown in FIG. 3B. The resonator 132 is positioned above the
first and second waveguides 134 and 136 and separated therefrom by
a separation layer. The waveguides 134 and 136, which preferably
include a tapered structure, are positioned in parallel orientation
in the same layer. The tunable laser 102a further includes a
collimated lens 152 and a mirror 150, positioned adjacent to an end
facet 139 of the second waveguide 136 or, alternatively, as shown
in FIG. 16B, the tunable laser 102b includes a H.R. coating 154
applied to the end facet 139 of the second waveguide 136.
[0108] In operation, current is applied to the laser diode 110 at a
level below the lasing threshold of the laser diode 110 to generate
spontaneous light emissions from the A.R. coated end facet 119 of
the laser diode 110. The light emissions are coupled into the first
waveguide 134 of the waveguide-coupled resonator 130 through the
coupling lens 111. The light propagates through the first waveguide
134 and reaches the interaction area 137 of the first waveguide 134
and the resonator 132. Light having a wavelength associated with a
resonance frequency of the resonator 132 is vertically coupled into
the resonator 132 through evanescent coupling across the separation
layer. As the light propagates within the resonator 132, the light
is vertically coupled into the second waveguide 136 through
evanescent coupling across the separation layer at the interaction
area 137 of the second waveguide 136 and the resonator 132. Thus, a
certain portion of the input optical power from the laser diode 110
is transferred from the first coupling waveguide 134 to the second
coupling waveguide 136.
[0109] In the tunable laser 102a shown in FIG. 16A, the collimated
lens 152 right after the end facet 139 of the second waveguide 136
converts the output of the second waveguide 136 into parallel light
beams. The mirror 150 reflects the light or optical power back into
the second waveguide 136. In the tunable laser 102b shown in FIG.
16B, the H.R. coating 154 on the end facet 139 of the second
waveguide 136 reflects the light or optical power back into the
second waveguide 136. The reflected light or optical power
propagates back through the waveguide-coupled resonator 130, i.e.,
the reflected light propagates through the second waveguide 136 to
the interaction area 137 where it is coupled into the resonator 132
and, as it propagates within the resonator 132, it is coupled into
the first waveguide 134 at the interaction area 137. From the first
waveguide 134, the light is coupled back into the laser diode 110.
Thus, a closed optical cavity is formed between the laser diode 110
and the waveguide-coupled optical resonator 130. Lasing and tuning
of the lasing wavelength are accomplished as discussed above.
[0110] Referring to FIGS. 18A and 18B, additional illustrative
embodiments 104a and 104b of the tunable laser of the present
invention are shown to include multiple resonators 132.sub.i,
132.sub.ii, and 132.sub.iii instead of a single resonator. With the
exception of multiple resonators 132.sub.i, 132.sub.ii, and
132.sub.iii, the structure of the tunable lasers 104a and 104b
correspond to the structure of the tunable lasers 102a and 102b
shown in FIGS. 16A and 16B with like elements identified with the
same element numeral. Electrode contacts 138.sub.i, 138.sub.ii, and
138.sub.iii are shown positioned on top of the resonators
132.sub.i, 132.sub.ii, and 132.sub.iii. A second set of electrical
contacts (not shown) are positioned below the resonators 132.sub.i,
132.sub.ii, and 132.sub.iii as shown in FIG. 3B.
[0111] The tunable lasers 102a, 102b, 104a and 104b, as depicted in
FIGS. 16A, 16B, 18A and 18B, respectively, include coupling
waveguides that are formed in the same layer of the device. Those
of skill in the art will appreciate that the coupling waveguides
may be formed in different layers as shown in FIGS. 17A, 17B, 19A
and FIG. 19B.
[0112] Referring to FIGS. 17A and 17B, the tunable lasers 103a and
103b of the present invention are shown to include a semiconductor
laser diode 110, with opposing end facets 118 and 119, optically
coupled through a high N.A. coupling lens 111 to a
waveguide-coupled resonator 140. The laser diode 110 has
substantially the same structure as the laser diode 10 shown in
FIG. 1 with the exception of the end facet 119 that is adjacent the
waveguide-coupled optical resonator 140 being coated with an A.R.
coating. The waveguide-coupled resonator 140, which has
substantially the same structure as the waveguide-coupled resonator
40 shown in FIGS. 4A and 4B, includes a circular or disk-shaped
resonator cavity 142 with an electrode contact 148 shown positioned
on top of the resonator 142. An additional electrode contact (not
shown) may be positioned below the resonator 142 as shown in FIG.
4B. The resonator 142 is positioned above the first waveguide 144
and below the second waveguide 146 and separated therefrom by
separation layers. The waveguides 144 and 146, which preferably
include a tapered structure, are positioned in parallel orientation
in different layers. The tunable laser, as shown in FIG. 17A,
further includes a collimated lens 152 and a mirror 150, positioned
adjacent to an end facet 149 of the second waveguide 146 or,
alternatively, as shown in FIG. 17B, a H.R. coating 154 applied to
the end facet 149 of the second waveguide 146.
[0113] In operation, current is applied to the laser diode 110 at a
level below the lasing threshold of the laser diode 110 to generate
spontaneous light emissions from the A.R. coated end facet 119 of
the laser diode 110. The light emissions are coupled into the first
waveguide 144 of the waveguide-coupled resonator 140 through the
coupling lens 111. The light propagates through the first waveguide
144 and reaches the interaction area 147 of the first waveguide 144
and the resonator 142. Light having a wavelength associated with a
resonance frequency of the resonator 142 is vertically coupled into
the resonator 142 through evanescent coupling across the first
separation layer. As the light propagates within the resonator 142,
the light is vertically coupled into the second waveguide 146
through evanescent coupling across the second separation layer at
the interaction area 147 of the second waveguide 146 and the
resonator 142. Thus, a certain portion of the input optical power
from the laser diode 110 is transferred from the first coupling
waveguide 144 to the second coupling waveguide 146.
[0114] In the tunable laser 103a shown in FIG. 17A, the collimated
lens 152 right after the end facet 149 of the second waveguide 146
converts the output of the second waveguide 146 into parallel light
beams. The mirror 150 reflects the light or optical power back into
the second waveguide 146. In the tunable laser 103b shown in FIG.
17B, the H.R. coating 154 on the end facet 149 of the second
waveguide 146 reflects the light or optical power back into the
second waveguide 146. The reflected light or optical power
propagates back through the waveguide-coupled resonator 140, i.e.,
the reflected light propagates through the second waveguide 146 to
the interaction area 147 where it is coupled into the resonator 142
and, as it propagates within the resonator 142, it is coupled into
the first waveguide 144 at the interaction area 147. From the first
waveguide 144, the light is coupled back into the laser diode 110.
Thus, a closed optical cavity is formed between the laser diode 110
and the waveguide-coupled optical resonator 140. Lasing and tuning
of the lasing wavelength are accomplished as discussed above.
[0115] Referring to FIGS. 19A and 19B, additional illustrative
embodiments 105a and 105b of the tunable laser of the present
invention are shown to include multiple resonators 142.sub.i,
142.sub.ii, and 142.sub.iii instead of a single resonator. With the
exception of multiple resonators 142.sub.i, 142.sub.ii, and
142.sub.iii, the structure of these tunable lasers 105a and 105b
correspond to the structure of the tunable lasers 103a and 103b
shown in FIGS. 17A and 17B with like elements identified with the
same element numeral. Electrode contacts 148.sub.i, 148.sub.ii, and
148.sub.iii are shown positioned on top of the resonators
142.sub.i, 142.sub.ii, and 142.sub.iii. A second set of electrode
contacts (not shown) are positioned below the resonators 142.sub.i,
142.sub.ii, and 142.sub.iii as shown in FIG. 4B.
[0116] Monolithic integrated tunable lasers 106, 107, and 108 of
the present invention are shown in FIGS. 20A, 20B and 20C,
respectively, to include a semiconductor laser diode 110 integrated
with a waveguide-coupled resonator 120, 130 and 140 on the same
substrate 121, 131 and 141. Monolithic integration may be
accomplished using regrowth methods, i.e., the laser diode layers
110 are grown first on the substrate 121, 131 and 141 and then the
chip is made with the standard semiconductor wafer fabrication
processes. Some areas on the substrate are etched away and the
layers for the waveguide-coupled resonator 120, 130 and 140 are
then grown. Again, standard semiconductor fabrication processes are
used to define the waveguide-coupled resonator 120, 130 and 140. It
is advantageous, however, to have one of the end facets of the
laser diode 110 well aligned and coupled to the first waveguide
124, 134 and 144 of the waveguide-couple resonator 120, 130 and
140. The butt-joint coupling method, which has been demonstrated in
narrow-linewidth DBR lasers and integrated DFB
laser/electroabsorption modulators, results in nearly 100% coupling
efficiency. Preferably, high reflection coating 154 is deposited on
one end facet of the second waveguide 126, 136 and 146. The
reflectivity for such coatings may be more than 90%. The
waveguide-coupled resonator 120, 130 and 140 may also comprise
multiple resonators to improve the performance as discussed
above.
[0117] The tunable laser of the present invention is also adaptable
to more advanced monolithic integrations, i.e., more optical
devices can be integrated with the tunable laser into the same
substrate and, thus, more complex functions can be realized. For
example, as shown in FIG. 21A, an optical device 200, such as a
tunable transmitter or transponder, may comprise an
electro-absorption (EA) modulator 256 fabricated on the same
substrate 231 right after the tunable laser 201 wherein the output
from the tunable laser 201 can be modulated. The tunable laser 201
includes a laser diode 210 coupled to a waveguide-coupled resonator
230 comprising a resonator 232 coupled to first and second
waveguides 234 and 236 with a H.R. coating applied to an end facet
of the second waveguide 236.
[0118] Another example, as shown in FIG. 21B, is the use of a
waveguide-coupled resonator 360 to multiplex the outputs from
multiple tunable lasers 301, 302 and 303 to form a waveguide bus
300. Preferably, the waveguide-couple resonator 360 comprises
separate input waveguides 361, 362 and 363 coupled to the outputs
from separate tunable lasers 301, 302 and 303. The tunable lasers
comprise a laser diode 310 coupled to a waveguide-coupled optical
resonator comprising first and second waveguides 334 and 336
coupled to an optical resonator 332. Light entering the input
waveguides 361, 362 and 363 from the tunable lasers 301, 302 and
303 having wavelengths equal to a resonance frequency of the
resonators 365, 366 and 367 is transferred to the resonators and
onto the output waveguide 364 by evanescent coupling.
[0119] In addition, the optical devices of the present invention
may be made virtually lossless by integrating amplifiers into the
devices. As shown in FIGS. 22A and 22B, the optical device 200
shown in FIG. 21A may be modified by integrating an external gain
section 280 into the optical device 200a adjacent to the EA
modulator 256 or by making part of the waveguides 234 and 236 of
the optical device 200b into amplifiers 281 and 282. By injecting
current into these gain sections, additional optical gain is
provided for the light and lower threshold lasing can be
achieved.
[0120] While the invention is susceptible to various modifications
and alternative forms, specific embodiments thereof have been shown
in the drawings and are herein described in detail. It should be
understood, however, that the invention is not to be limited to the
particular form disclosed, but to the contrary, the invention is to
cover all modifications, equivalents, and alternatives falling
within the spirit and scope of the appended claims.
* * * * *