U.S. patent application number 10/877929 was filed with the patent office on 2004-11-25 for magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same.
This patent application is currently assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.. Invention is credited to Kawashima, Yoshi, Matsukawa, Nozomu, Morinaga, Yasunori, Odagawa, Akihiro, Sugita, Yasunari.
Application Number | 20040235202 10/877929 |
Document ID | / |
Family ID | 29267371 |
Filed Date | 2004-11-25 |
United States Patent
Application |
20040235202 |
Kind Code |
A1 |
Sugita, Yasunari ; et
al. |
November 25, 2004 |
Magnetoresistive element and method for producing the same, as well
as magnetic head, magnetic memory and magnetic recording device
using the same
Abstract
The present invention provides a method for producing a
magnetoresistive element including a tunnel insulating layer, and a
first magnetic layer and a second magnetic layer that are laminated
so as to sandwich the tunnel insulating layer, wherein a resistance
value varies depending on a relative angle between magnetization
directions of the first magnetic layer and the second magnetic
layer. The method includes the steps of: (i) laminating a first
magnetic layer, a third magnetic layer and an Al layer successively
on a substrate; (ii) forming a tunnel insulating layer containing
at least one compound selected from the group consisting of an
oxide, nitride and oxynitride of Al by performing at least one
reaction selected from the group consisting of oxidation, nitriding
and oxynitriding of the Al layer; and (iii) forming a laminate
including the first magnetic layer, the tunnel insulating layer and
a second magnetic layer by laminating the second magnetic layer in
such a manner that the tunnel insulating layer is sandwiched by the
first magnetic layer and the second magnetic layer. The third
magnetic layer has at least one crystal structure selected from the
group consisting of a face-centered cubic crystal structure and a
face-centered tetragonal crystal structure and is (111) oriented
parallel to a film plane of the third magnetic layer. According to
this production method, it is possible to produce a
magnetoresistive element with excellent properties and thermal
stability.
Inventors: |
Sugita, Yasunari;
(Osaka-shi, JP) ; Odagawa, Akihiro;
(Tsuchiura-shi, JP) ; Matsukawa, Nozomu;
(Nara-shi, JP) ; Kawashima, Yoshi; (Neyagawa-shi,
JP) ; Morinaga, Yasunori; (Suita-shi, JP) |
Correspondence
Address: |
MERCHANT & GOULD PC
P.O. BOX 2903
MINNEAPOLIS
MN
55402-0903
US
|
Assignee: |
MATSUSHITA ELECTRIC INDUSTRIAL CO.,
LTD.
Osaka
JP
571-8501
|
Family ID: |
29267371 |
Appl. No.: |
10/877929 |
Filed: |
June 25, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10877929 |
Jun 25, 2004 |
|
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|
10719412 |
Nov 21, 2003 |
|
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|
10719412 |
Nov 21, 2003 |
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PCT/JP03/05219 |
Apr 23, 2003 |
|
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Current U.S.
Class: |
438/3 ;
G9B/5.114; G9B/5.116; G9B/5.119 |
Current CPC
Class: |
B82Y 25/00 20130101;
G11B 2005/3996 20130101; H01F 10/3268 20130101; H01F 41/302
20130101; G11B 5/3916 20130101; H01L 27/228 20130101; B82Y 40/00
20130101; G11C 11/16 20130101; H01F 10/3254 20130101; G11B 5/3909
20130101; G11C 11/161 20130101; G01R 33/093 20130101; G11B 5/3903
20130101; H01L 43/12 20130101; B82Y 10/00 20130101; H01L 43/08
20130101 |
Class at
Publication: |
438/003 |
International
Class: |
H01L 021/00 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 23, 2002 |
JP |
2002-120433 |
Claims
1-8. (Canceled)
9. A magnetoresistive element comprising: a tunnel insulating layer
containing at least one compound selected from the group consisting
of an oxide, nitride and oxynitride of Al; a first magnetic layer
and a second magnetic layer that are laminated so as to sandwich
the tunnel insulating layer; and a third magnetic layer disposed
between the first magnetic layer and the tunnel insulating layer,
wherein a resistance value varies depending on a relative angle
between magnetization directions of the first magnetic layer and
the second magnetic layer, and the third magnetic layer has at
least one crystal structure selected from the group consisting of a
face-centered cubic crystal structure and a face-centered
tetragonal crystal structure and is (111) oriented parallel to a
film plane of the third magnetic layer.
10. The magnetoresistive element according to claim 9, wherein the
third magnetic layer comprises a magnetic material containing at
least one element selected from the group consisting of Fe, Co and
Ni.
11. The magnetoresistive element according to claim 10, wherein the
magnetic material has a composition represented by the formula
Fe.sub.xCo.sub.y, where x and y are values satisfying the following
equations:x+y=10.05.ltoreq.x.ltoreq.0.30.7.ltoreq.y.ltoreq.0.95
12. The magnetoresistive element according to claim 10, wherein the
magnetic material has a composition represented by the formula
Fe.sub.x'Ni.sub.y', where x' and y' are values satisfying the
following
equations:x'+y'=10.ltoreq.x'.ltoreq.0.70.3.ltoreq.y'.ltoreq.1.
13. The magnetoresistive element according to claim 10, wherein the
magnetic material further contains at least one element selected
from the group consisting of Rh, Pd, Ag, Ir, Pt and Au.
14. The magnetoresistive element according to claim 13, wherein the
magnetic material has a composition represented by the formula
M.sub.pZ.sub.q, where M is at least one element selected from the
group consisting of Fe, Co and Ni, Z is at least one element
selected from the group consisting of Rh, Pd, Ag, Ir, Pt and Au,
and p and q are values satisfying the following
equations:p+q=10.6.ltoreq.p.ltoreq.0.990.01.ltor-
eq.q.ltoreq.0.4.
15. The magnetoresistive element according to claim 9, further
comprising an antiferromagnetic layer.
16. The magnetoresistive element according to claim 15, wherein the
antiferromagnetic layer is disposed on a side opposite a plane of
the first magnetic layer facing the tunnel insulating layer and is
(111) oriented parallel to a film plane of the antiferromagnetic
layer.
17. A magnetic head comprising the magnetoresistive element
according to claim 9 and a shield for limiting an introduction of a
magnetic field other than a magnetic field to be detected by the
magnetoresistive element to the magnetoresistive element.
18. A magnetic head comprising the magnetoresistive element
according to claim 9 and a magnetic flux guiding portion for
guiding a magnetic field to be detected by the magnetoresistive
element to the magnetoresistive element.
19. A magnetic memory comprising the magnetoresistive element
according to claim 9, an information recording conductive line for
recording information on the magnetoresistive element and an
information reading conductive line for reading the
information.
20. The magnetic memory according to claim 19, wherein a plurality
of the magnetoresistive elements are disposed in the form of a
matrix.
21. A magnetic recording device comprising the magnetic head
according to claim 17 and a magnetic recording medium capable of
reading magnetic information with the magnetic head.
22. A magnetic recording device comprising the magnetic head
according to claim 18 and a magnetic recording medium capable of
reading magnetic information with the magnetic head.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to methods for producing
magnetoresistive elements. The invention also relates to
magnetoresistive elements, as well as magnetic heads, magnetic
memories and magnetic recording devices, which are magnetic devices
using the same.
[0003] 2. Description of the Related Art
[0004] With the recent developments in advanced communication
networks, there is a demand for devices capable of handling a large
volume of information at high speeds. For example, as
large-capacity, high-speed devices, expectations are growing for
magnetic heads and magnetic memories (MRAMs) that utilize the
tunneling magnetoresistance effect (TMR effect).
[0005] The TMR effect is the phenomenon in which the resistance
value varies depending on a relative angle between the
magnetization directions of a pair of magnetic layers laminated
with a tunnel insulating layer interposed therebetween.
Magnetoresistive elements (TMR elements) utilizing this phenomenon
have a ratio of change in the magnetoresistance (MR ratio) in a
minute magnetic field that is by far larger than elements utilizing
the anisotropic magnetoresistance effect (AMR effect) or the giant
magnetoresistance effect (GMR effect). Therefore, extensive
developments are under way to apply TMR elements to next-generation
magnetic heads and MRAMs.
[0006] Each of the layers constituting a TMR element is extremely
thin, and is on the order of several nm to several tens of nm. In
order to achieve a TMR element with excellent magnetoresistance
properties (MR properties), it is important to control these
layers. Particularly, the state of a tunnel insulating layer is
considered to have a significant effect on the MR properties of the
element.
[0007] For example, in the case of using a TMR element for a device
such as a magnetic head, it is preferable to realize a large MR
ratio and minimize (e.g., 10 .OMEGA..multidot..mu.m.sup.2 or less)
the junction resistance value (resistance value per unit area when
a current is supplied in a direction perpendicular to the film
plane direction of the element). When the junction resistance value
is small, it is possible to suppress, for example, the generation
of shot noise, which is the phenomenon of electrons being
transmitted randomly through the tunnel insulating layer (shot
noise causes a reduction in the S/N (signal-to-noise ratio) of the
element). The junction resistance value can be reduced by, for
example, decreasing the thickness of the tunnel insulating layer.
However, simply decreasing the thickness of the tunnel insulating
layer possibly may reduce the resulting MR ratio. In general, the
interface between the tunnel insulating layer and a magnetic layer
in contact therewith is not completely smooth, exhibiting a
roughness at the atomic level in the sub-nanometer to several
nanometer range. That is, regions in which the thickness is locally
large and regions in which the thickness is locally small are
present in the tunnel insulating layer. Therefore, there is the
possibility that with a decrease in the thickness of the tunnel
insulating layer, a leakage current may be generated in the region
in which the thickness is locally small. Since a leakage current
does not contribute to the MR effect, this causes a reduction in
the MR ratio, although the apparent junction resistance value is
reduced.
[0008] In addition, TMR elements have the problem that the
resulting MR ratio decreases with an increase in the applied bias
voltage. In the case of a MRAM using TMR elements, for example, a
bias voltage of about 400 mV generally is applied. In this state,
the resulting MR ratio is about half of that in the state in which
no bias voltage is applied. Such "bias voltage dependence of the MR
ratio" is considered to be attributed to, for example, lattice
defects in the tunnel insulating layer, impurities contained in the
tunnel insulating layer, elementary excitations on the interface
between the tunnel insulating layer and the magnetic layer and
mismatches in the band structure. Among them, lattice defects in
the tunnel insulating layer, mismatches in the band structure and
the like are believed to be due partly to a roughness on the
interface between the tunnel insulating layer and the magnetic
layer.
[0009] In the case of using TMR elements for devices such as
magnetic heads and MRAMs, the elements are required to have thermal
stability capable of withstanding the process of manufacturing the
devices. For example, heat treatment at about 200.degree. C. to
300.degree. C. is necessary in the manufacturing process of the
elements themselves. When used for magnetic heads, the elements
need to be stable at the operating environment temperature (e.g.,
about 120.degree. C. to 170.degree. C.) of the magnetic heads.
Research is also carried out to fabricate MR elements on CMOSs for
use as MRAM devices. Heat treatment at even higher temperatures
(e.g., 400.degree. C. to 450.degree. C.) is necessary in the
manufacturing process of CMOSs.
[0010] However, the MR properties of conventional TMR elements tend
to deteriorate by heat treatment at about 300.degree. C. to
350.degree. C. This is presumably due to the diffusion of
impurities into the tunnel insulating layer, an increase in the
interface roughness and the like. The tunnel insulating layer has a
very small thickness, so that it is susceptible to such effect. In
order to apply TMR elements to devices such as magnetic heads and
MRAMs, it is therefore important to develop TMR elements whose MR
properties tend less to deteriorate when the temperature of the
elements is increased by heat treatment and the like.
SUMMARY OF THE INVENTION
[0011] In view of this situation, it is an object of the present
invention to provide a TMR element excellent in properties and
thermal stability, and a method for producing such a TMR element.
It is also an object of the present invention to provide a magnetic
head, a magnetic memory and a magnetic recording device that are
excellent in properties and thermal stability. It should be noted
that in the present specification, the TMR element simply may be
referred to as "magnetoresistive element" or "MR element".
[0012] In order to achieve the forgoing objects, the present
invention provides a method for producing a magnetoresistive
element including a tunnel insulating layer, and a first magnetic
layer and a second magnetic layer that are laminated so as to
sandwich the tunnel insulating layer,
[0013] wherein a resistance value varies depending on a relative
angle between magnetization directions of the first magnetic layer
and the second magnetic layer. The method includes the steps of
[0014] (i) laminating a first magnetic layer, a third magnetic
layer and an Al layer successively on a substrate;
[0015] (ii) forming a tunnel insulating layer containing at least
one compound selected from the group consisting of an oxide,
nitride and oxynitride of Al by performing at least one reaction
selected from the group consisting of oxidation, nitriding and
oxynitriding of the Al layer; and
[0016] (iii) forming a laminate including the first magnetic layer,
the tunnel insulating layer and a second magnetic layer by
laminating the second magnetic layer in such a manner that the
tunnel insulating layer is sandwiched by the first magnetic layer
and the second magnetic layer,
[0017] wherein the third magnetic layer has at least one crystal
structure selected from the group consisting of a face-centered
cubic crystal structure and a face-centered tetragonal crystal
structure and is (111) oriented parallel to a film plane of the
third magnetic layer. The method for determining whether the layer
is (111) oriented parallel is described later in the examples.
[0018] In the production method of the present invention, the third
magnetic layer may include a magnetic material containing at least
one element selected from the group consisting of Fe, Co and
Ni.
[0019] In the production method of the present invention, the
magnetic material may have a composition represented by the formula
Fe.sub.xCo.sub.y, where x and y are values satisfying the following
equations:
x+y=1
0.05.ltoreq.x.ltoreq.0.3
0.7.ltoreq.y.ltoreq.0.95
[0020] In the production method of the present invention, the
magnetic material may have a composition represented by the formula
Fe.sub.x'Ni.sub.y', where x' and y' are values satisfying the
following equations:
x'+y'=1
0.ltoreq.x'.ltoreq.0.7
0.3.ltoreq.y'.ltoreq.1
[0021] In the production method of the present invention, the
magnetic material further may contain at least one element selected
from the group consisting of Rh, Pd, Ag, Ir, Pt and Au.
[0022] In the production method of the present invention, the
magnetic material may have a composition represented by the formula
M.sub.pZ.sub.q, where M is at least one element selected from the
group consisting of Fe, Co and Ni, Z is at least one element
selected from the group consisting of Rh, Pd, Ag, Ir, Pt and Au,
and p and q are values satisfying the following equations:
p+q=1
0.6.ltoreq.p.ltoreq.0.99
0.01.ltoreq.q.ltoreq.0.4
[0023] In the production method of the present invention, an
antiferromagnetic layer may be laminated between the substrate and
the first magnetic layer in the step (i).
[0024] The production method of the present invention further may
include the step of: (a) heat treating the laminate, after the step
(iii).
[0025] Next, the present invention provides a magnetoresistive
element including: a tunnel insulating layer containing at least
one compound selected from the group consisting of an oxide,
nitride and oxynitride of Al; a first magnetic layer and a second
magnetic layer that are laminated so as to sandwich the tunnel
insulating layer; and a third magnetic layer disposed between the
first magnetic layer and the tunnel insulating layer. A resistance
value varies depending on a relative angle between magnetization
directions of the first magnetic layer and the second magnetic
layer, and the third magnetic layer has at least one crystal
structure selected from the group consisting of a face-centered
cubic crystal structure and a face-centered tetragonal crystal
structure and is (111) oriented parallel to a film plane of the
third magnetic layer.
[0026] In the magnetoresistive element of the present invention,
the third magnetic layer may include a magnetic material containing
at least one element selected from the group consisting of Fe, Co
and Ni.
[0027] In the magnetoresistive element of the present invention,
the magnetic material may have a composition represented by the
formula Fe.sub.xCo.sub.y, where x and y are values satisfying the
following equations:
x+y=1
0.05.ltoreq.x.ltoreq.0.3
0.7.ltoreq.y.ltoreq.0.95
[0028] In the magnetoresistive element of the present invention,
the magnetic material may have a composition represented by the
formula Fe.sub.x' Ni.sub.y', where x' and y' are values satisfying
the following equations:
x'+y'=1
0.ltoreq.x'.ltoreq.0.7
0.3.ltoreq.y'.ltoreq.1
[0029] In the magnetoresistive element of the present invention,
the magnetic material further may contain at least one element
selected from the group consisting of Rh, Pd, Ag, Ir, Pt and
Au.
[0030] In the magnetoresistive element of the present invention,
the magnetic material may have a composition represented by the
formula M.sub.pZ.sub.q, where M is at least one element selected
from the group consisting of Fe, Co and Ni, Z is at least one
element selected from the group consisting of Rh, Pd, Ag, Ir, Pt
and Au, and p and q are values satisfying the following
equations:
p+q=1
0.6.ltoreq.p.ltoreq.0.99
0.01.ltoreq.q.ltoreq.0.4
[0031] The magnetoresistive element of the present invention
further may include an antiferromagnetic layer.
[0032] In the magnetoresistive element of the present invention,
the antiferromagnetic layer is disposed on a side opposite a plane
of the first magnetic layer facing the tunnel insulating layer and
is (111) oriented parallel to a film plane of the antiferromagnetic
layer.
[0033] Next, the present invention provides a magnetic head
including the above-described magnetoresistive element and a shield
for limiting an introduction of a magnetic field other than a
magnetic field to be detected by the magnetoresistive element to
the magnetoresistive element.
[0034] Alternatively, the magnetic head of the present invention
also may include the above-described magnetoresistive element and a
magnetic flux guiding portion for guiding a magnetic field to be
detected by the magnetoresistive element to the magnetoresistive
element.
[0035] Next, the present invention provides a magnetic memory that
may include the above-described magnetoresistive element and an
information recording conductive line for recording information on
the magnetoresistive element and an information reading conductive
line for reading the information.
[0036] In the magnetic memory of the present invention, a plurality
of the magnetoresistive elements may be disposed in the form of a
matrix.
[0037] Next, the present invention provides a magnetic recording
device including one of the above-described magnetic heads and a
magnetic recording medium capable of reading magnetic information
with the magnetic head.
BRIEF DESCRIPTION OF THE DRAWINGS
[0038] FIGS. 1A to 1E are schematic cross-sectional views showing
the respective steps of an example of the method of producing a
magnetoresistive element according to the present invention.
[0039] FIGS. 2A and 2B are schematic cross-sectional views for
illustrating the difference between a conventional magnetoresistive
element and the magnetoresistive element of the present
invention.
[0040] FIG. 3 is a schematic cross-sectional view showing an
example of the magnetoresistive element of the present
invention.
[0041] FIG. 4 is a schematic cross-sectional view showing another
example of the magnetoresistive element of the present
invention.
[0042] FIG. 5 is a cross-sectional view showing an example of the
magnetoresistive element of the present invention that includes
electrodes.
[0043] FIG. 6 is a cross-sectional view showing an example of the
magnetic head of the present invention.
[0044] FIG. 7 is a cross-sectional view showing another example of
the magnetic head of the present invention.
[0045] FIG. 8A is a schematic view showing yet another example of
the magnetic head of the present invention.
[0046] FIG. 8B is a cross-sectional view obtained by cutting the
magnetic head shown in FIG. 8A on plane A shown in FIG. 8A.
[0047] FIG. 9 is a schematic view showing an example of the
magnetic recording device of the present invention.
[0048] FIGS. 10A and 10B are schematic views showing another
example of the magnetic recording device of the present
invention.
[0049] FIG. 11 is a schematic view showing an example of the
magnetic memory of the present invention.
[0050] FIGS. 12A and 12B are schematic views showing basic examples
of the operations in the magnetic memory of the present
invention.
[0051] FIGS. 13A and 13B are schematic views showing basic examples
of the operations in the magnetic memory of the present
invention.
[0052] FIGS. 14A and 14B are schematic views showing basic examples
of the operations in the magnetic memory of the present
invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0053] Embodiments of the present invention are described below
with reference to the drawings. In the following embodiments, the
same reference numerals are applied to the same parts, and
redundant explanations are thus omitted in some cases.
[0054] First, the method for producing a MR element of the present
invention is described.
[0055] According to the method of producing a MR element of the
present invention, it is possible to obtain a TMR element with
excellent properties and thermal stability.
[0056] FIGS. 1A to 1E show an example of the method of producing a
MR element of the present invention. First, as shown in FIGS. 1A to
1C, a lower electrode layer 2, a first magnetic layer 3, a third
magnetic layer 4 and an Al layer 5 are laminated successively on a
substrate 1 (step (i)). At this time, the third magnetic layer
(smooth interface layer) 4 is a layer that has at least one crystal
structure selected from the group consisting of a face-centered
cubic crystal (fcc structure) and a face-centered tetragonal
crystal (fct structure) and that is (111) oriented parallel to its
own film plane. Accordingly, it is possible to achieve an Al layer
5 having the (111) orientation with respect to its own film plane
by laminating the Al layer 5 on the third magnetic layer 4. In
general, Al is most stable and dense when its crystal structure is
the fcc structure having the (111) orientation. Therefore, it is
possible to achieve an Al layer 5 having a more stable and dense
crystal structure than in the case in which the Al layer 5 is
directly laminated on the first magnetic layer 3 without providing
the third magnetic layer 4.
[0057] Next, as shown in FIG. 1D, a tunnel insulating layer 6
containing an Al oxide (Al--O) is formed by oxidizing the Al layer
5 (step (ii)). As described above, because of the presence of the
third magnetic layer 4, the Al layer 5 has the fcc structure with
the (111) orientation, as well as a stable and dense crystal
structure. Therefore, the tunnel insulating layer 6 formed by
oxidizing the Al layer 5 can be a dense tunnel insulating layer
having few crystal defects. It should be noted that when a
composition is denoted with hyphens, such as in the case of
"Al--O", in this specification, there is no particular limitation
on the composition ratio of the contained elements.
[0058] Next, as shown in FIG. 1E, a second magnetic layer 7 is
laminated such that the tunnel insulating layer 6 is sandwiched by
the first magnetic layer 3 and the second magnetic layer 7. In this
manner, a laminate 10 including the first magnetic layer 3, the
tunnel insulating layer 6 and the second magnetic layer 7 is formed
(step (iii)). Thereafter, for example, an upper electrode layer may
be laminated further, or micro-fabrication may be performed, as
required. As described above, the tunnel insulating layer 6 can be
a dense tunnel insulating layer having few crystal defects, so that
it is possible to obtain a TMR element with excellent properties
and thermal stability.
[0059] In addition, the following effects seem to be achieved by
laminating the third magnetic layer 4:
[0060] FIG. 2A is a schematic cross-sectional view showing an
example of a conventional TMR element. In general, the surface of a
lower electrode layer 52 has the roughness reflecting a roughness
of the substrate surface or the crystal grain boundaries of the
lower electrode layer itself (taking the periodicity in the film
plane direction with respect to the film plane of the lower
electrode layer, i.e., with respect to the film plane of the
element as "d" and the height of the projections in a direction
perpendicular to the film plane as "h"). When a magnetic layer 53
is laminated on such a lower electrode layer 52, and a tunneling
insulating layer 56 is formed, the surface of the magnetic layer
53, that is, the interface between the magnetic layer 53 and the
tunnel insulating layer 56 will have the same roughness. Moreover,
the same roughness results on the surface of the tunnel insulating
layer 56 itself. For this reason, it is difficult to form the
tunnel insulating layer 56 as a dense tunnel insulating layer with
few crystal defects, resulting in the possibility that its
properties and the thermal stability of the element may
deteriorate. Although not explicitly shown in FIG. 2A, a roughness
attributed to the atomic steps of the magnetic layer 53 itself also
can be caused, so that there is the possibility that a roughness
that is more minute than the periodicity d and the height h shown
in FIG. 2A further may be caused on the interface between the
magnetic layer 53 and the tunnel insulating layer 56. In the
descriptions of the method for producing a MR element of the
present invention, "surface" means the face of each of the layers
of the element that is on a side opposite to the substrate.
[0061] On the other hand, in the TMR element of the present
invention, the third magnetic layer 4 is disposed between the
tunnel insulating layer 6 and the first magnetic layer 3, as shown
in FIG. 2B (FIG. 2B is a schematic cross-sectional view showing an
example of the TMR element of the present invention). As described
above, the third magnetic layer has at least one crystal structure
selected from the group consisting of the fcc structure and the fct
structure and is (111) oriented parallel to its own film plane.
Therefore, the surface can be smoothed to the order of the atomic
size (order of sub-nanometer). Accordingly, the interface between
the third magnetic layer 4 and the tunnel insulating layer 6 can be
smoothed by laminating the third magnetic layer 4 on the first
magnetic layer 3 and thereafter forming the tunnel insulating layer
6. The surface of the tunnel insulating layer 6 also can be
smoothed, so that the interface between the second magnetic layer
and the tunnel insulating layer 6 can be smoothed when the second
magnetic layer is further laminated on the tunnel insulating layer
6. Accordingly, it is possible to obtain a TMR element with
excellent properties and thermal stability.
[0062] As described above, in a TMR element obtained by the
production method of the present invention, it is possible to
achieve a dense tunnel insulating layer having few crystal defects,
and the interface between the tunnel insulating layer and a
magnetic layer in contact therewith can be smoothed, so that the
thickness of the tunnel insulating layer can be reduced even
further. Therefore, it is possible to obtain a TMR element having
both a small junction resistance value and a large MR ratio.
[0063] Since a dense tunnel insulating layer having few crystal
defects can be achieved, it is possible to obtain a TMR element
with little loss in the MR ratio when a bias voltage is increased
(i.e., with small bias voltage dependence).
[0064] Further, the (111) plane, which is the finest plane among
the crystal planes of the third magnetic layer, is parallel to the
film plane of the third magnetic layer (i.e., the film plane of the
element), so that it is possible to suppress the thermal diffusion
of the atoms from layers other than the tunnel insulating layer
(e.g., the lower electrode layer, the first magnetic layer and
others, and an antiferromagnetic layer in the case where the
element contain the same) to the tunnel insulating layer. When the
crystal grain size of the magnetic material contained in the first
magnetic layer is increased by heat treatment and the like, it is
also possible to inhibit such an effect from being exerted on the
tunnel insulating layer. Accordingly, it is possible to obtain a
TMR element with excellent thermal stability.
[0065] Although the Al layer 5 is oxidized in the example shown in
FIG. 1, at least one reaction selected from the group consisting of
oxidizing, nitriding and oxynitriding may be performed on the Al
layer 5. It is possible to form a tunnel insulating layer 6
containing at least one compound selected from the group consisting
of an oxide, nitride and oxynitride of Al, and in this case also a
TMR element similar to the example shown in FIG. 1 can be obtained.
The method for forming each layer, the method for oxidizing the Al
layer and the like will be discussed later.
[0066] Next, the third magnetic layer 4 is described more
specifically.
[0067] The third magnetic layer 4 has at least one crystal
structure selected from the group consisting of the fcc structure
and the fct structure and is (111) oriented parallel to its own
film plane. There is no particular limitation on its composition,
thickness and the like as long as it is magnetically coupled to the
first magnetic layer 3.
[0068] The thickness of the third magnetic layer laminated in the
step (i) is, for example, in the range of at least 1 nm and at most
10 nm, preferably, in the range of at least 1.5 nm and at most 5
nm. The surface roughness of the third magnetic layer 4 is, for
example, in the range of at least 0.5 nm and at most 1 nm, using
the arithmetical mean roughness R.sub.a prescribed in JIS (Japanese
Industrial Standards) B 0601-1994. For example, "d" is in the range
of at least 15 nm and at most 70 nm and "h" is in the range of at
least 3 nm and at most 8 nm, using the periodicity d and the height
h shown in FIGS. 2A and 2B. As discussed above, the surface
roughness of the third magnetic layer 4 is reflected in the surface
roughness on the interface between the third magnetic layer 4 and
the tunnel insulating layer 6.
[0069] In the production method of the present invention, the third
magnetic layer 4 may include a magnetic material containing at
least one element selected from the group consisting of Fe, Co and
Ni. In this case, the magnetic coupling between the first magnetic
layer 3 and the third magnetic layer 4 can be strengthened further,
so that it is possible to obtain a TMR element with better
properties.
[0070] More specifically, in the production method of the present
invention, the third magnetic layer 4 may include a magnetic
material having a composition represented by the formula
Fe.sub.xCo.sub.y. Alternatively, the third magnetic layer 4 may
include a magnetic material having a composition represented by the
formula Fe.sub.x'Ni.sub.y'. In these formulas, x, y, x' and y' are
values satisfying the following equations:
x+y=1, 0.05.ltoreq.x.ltoreq.0.3, 0.7.ltoreq.y.ltoreq.0.95
x'+y'=1, 0.ltoreq.x'.ltoreq.0.7, 0.3.ltoreq.y'.ltoreq.1
[0071] It should be noted that in this specification, the values
used for representing compositions are based on the atomic
composition ratios, unless stated otherwise.
[0072] Such a magnetic material tends to have an fcc structure, and
the third magnetic layer 4 thus can have the fcc structure with
higher reliability in the step (i). Accordingly, it is possible to
obtain a TMR element with better properties and thermal
stability.
[0073] In the production method of the present invention, the third
magnetic layer 4 may contain at least one element selected from the
group consisting of Fe, Co and Ni, and at least one element
selected from the group consisting of Rh, Pd, Ag, Ir, Pt and Au.
Such a magnetic material has atomic radii of Rh, Pd, Ag, Ir, Pt and
Au that are larger than those of Fe, Co and Ni, and is easily (111)
oriented, so that the surface of the third magnetic layer 4 can be
smoothed with higher reliability in the step (i). Moreover, since
the energy state of the surface can be better stabilized as
compared to a magnetic layer consisting only of at least one
element selected from the group consisting of Fe, Co and Ni, it is
possible to achieve a more stabilized and denser Al layer 5 in the
step (i). Accordingly, it is possible to form a denser tunnel
insulating layer 6 having fewer crystal defects in the step
(ii).
[0074] Furthermore, since Rh, Pd, Ag, Ir, Pt and Au are less
reactive with oxygen, nitrogen and the like, it is possible to
thermally stabilize the third magnetic layer more effectively,
thereby obtaining a MR element with better thermal stability. In
addition, the selective oxidation (nitriding, oxynitriding) of the
Al layer 5 can be performed in the step (ii), while preventing the
oxidation (nitriding, oxynitriding) of the third magnetic layer 4
as much as possible, so that it is possible to obtain a TMR element
with better properties.
[0075] In the production method of the present invention, the third
magnetic layer 4 may include a magnetic material having a
composition represented by the formula M.sub.pZ.sub.q, where M is
at least one element selected from the group consisting of Fe, Co
and Ni, Z is at least one element selected from the group
consisting of Rh, Pd, Ag, Ir, Pt and Au, and p and q are values
satisfying the following equations:
p+q=1, 0.6.ltoreq.p.ltoreq.0.99, 0.01.ltoreq.q.ltoreq.0.4
[0076] Inclusion of such a magnetic material in the third magnetic
layer 4 makes it possible to obtain a TMR element with better
properties and thermal stability.
[0077] Particularly, it is preferable that p and q satisfy the
relations p+q=1, 0.6.ltoreq.p.ltoreq.0.95,
0.05.ltoreq.q.ltoreq.0.4, and it is more preferable that they
satisfy the relations p+q=1, 0.6.ltoreq.p.ltoreq.0.9- ,
0.1.ltoreq.q.ltoreq.0.4. When q is greater than 0.5, the thickness
of the third magnetic layer 4 may be at most 2 nm, for example.
Since Rh, Pd, Ag, Ir, Pt and Au are nonmagnetic elements, there is
the possibility that the MR properties of the element possibly may
deteriorate if the thickness of the third magnetic layer is too
large.
[0078] In the production method of the present invention, an
antiferromagnetic layer may be laminated between the substrate and
the first magnetic layer in the step (i). For instance, in the
example shown in FIGS. 1A to 1E, an antiferromagnetic layer may be
laminated between the lower electrode layer 2 and the first
magnetic layer 3. Such a production method makes it possible to
obtain a spin valve TMR element having one of the first magnetic
layer 3 and the second magnetic layer 7 as a pinned magnetic layer
and the other of these magnetic layers as a free magnetic layer.
When an antiferromagnetic layer is laminated between the lower
electrode layer and the first magnetic layer, an exchange coupling
magnetic field is generated between the first magnetic layer and
the antiferromagnetic layer. Accordingly, it is possible to obtain
a spin valve TMR element having the first magnetic layer as a
pinned magnetic layer (magnetic layer whose magnetization direction
is fixed by the antiferromagnetic layer) and the second magnetic
layer 2 as a free magnetic layer (magnetic layer whose
magnetization can be rotated relatively easily with respect to the
first magnetic layer). In addition, the thickness of the
antiferromagnetic layer laminated in the step (i) is, for example,
in the range of at least 5 nm and at most 50 nm.
[0079] In the case of a spin valve MR element, a relative angle
between the magnetization directions of the pinned magnetic layer
and the free magnetic layer can be changed more easily, so that it
is possible to achieve a TMR element more suitable for devices
operating with minute magnetic fields. Further, it is possible to
achieve a smaller TMR element exhibiting a larger MR ratio.
[0080] There is no particular limitation on the material used for
the antiferromagnetic layer, and antiferromagnetic alloys
containing Mn (Mn-based antiferromagnetic alloys) may be used, for
example. As the Mn-based antiferromagnetic alloys, for example,
alloys may have a composition represented by the formula Z--Mn
(where Z is at least one element selected from the group consisting
of Pt, Pd, Ir, Fe, Ru and Rh). In particular, alloys having a
composition of Fe--Mn, Rh--Mn, Ir--Mn, Pt--Mn, Pt--Pd--Mn, Ni--Mn
and the like are preferable.
[0081] These antiferromagnetic alloys are likely to have the fcc
structure or the fct structure, and tend to be (111) oriented
parallel to their own film plane when used as the antiferromagnetic
layer. Therefore, by laminating such an antiferromagnetic layer, it
is possible to reduce the surface roughness of the substrate or the
surface roughness of each layer attributed to the crystal grain
boundaries of the lower electrode layer. Accordingly, it is
possible to obtain a TMR element with better properties and thermal
stability.
[0082] Particularly, during the lamination of the antiferromagnetic
layer between the substrate and the first magnetic layer in the
step (i), the antiferromagnetic layer may be laminated after
laminating an underlayer of Ni--Fe, Pt or the like. Ni--Fe, Pt and
the like are likely to have the fcc structure, so that the
antiferromagnetic layer can have the fcc structure with higher
reliability. Accordingly, it is possible to obtain a TMR element
with better properties and thermal stability.
[0083] Additionally, since Pt--Mn, Pt--Pd--Mn, Ni--Mn and the like
are changed into the fct structure by heat treatment at 250.degree.
C. or above, the exchange coupling magnetic field with the first
magnetic layer can be improved further by heat treatment.
Therefore, it is possible to obtain a TMR element with better
properties. Alternatively, it is possible to laminate the
antiferromagnetic layer on the second magnetic layer (i.e., on a
side opposite to the substrate side of the tunnel insulating
layer), instead of laminating it between the substrate and the
first magnetic layer (i.e., instead of laminating it between the
substrate and the tunnel insulating layer). In this case, it is
possible to obtain a spin valve TMR element having the second
magnetic layer as the pinned magnetic layer and the first magnetic
layer as the free magnetic layer.
[0084] The other layers are described below.
[0085] There is no particular limitation on the thickness of the Al
layer 5 laminated in the step (i). It may be set arbitrarily,
depending on the required properties of the TMR element, and it is,
for example, in the range of at least 0.1 nm and at most 10 nm. The
thickness of the laminated Al layer 5 can be used directly as the
thickness of the tunnel insulating layer 6.
[0086] There is no particular limitation on the materials used for
the first magnetic layer 3 and the second magnetic layer 7 that are
laminated in the step (i) and the step (iii), as long as they are
magnetic materials exhibiting ferromagnetic properties. For
example, magnetic materials made of Co, Fe, Ni, Co--Fe, Ni--Fe,
Ni--Co--Fe or the like may be used. It is also possible, as
required, to laminate a plurality of magnetic films made of
different magnetic materials. The thickness of the first magnetic
layer 3 and the second magnetic layer 7 that are laminated may be,
for example, in the range of at least 1 nm and at most 20 nm.
[0087] In the case of producing a spin valve MR element, a magnetic
material with excellent soft magnetic properties, for example, may
be used for the magnetic layer serving as the free magnetic layer.
More specifically, a permalloy (e.g., Ni.sub.81Fe.sub.19:
composition ratio by wt %), Co.sub.0.9Fe.sub.0.1,
(Co.sub.0.9Fe.sub.0.1).sub.0.8B.sub.0.2 or the like may be used,
for example. A magnetic material with large magnetic anisotropy,
for example, may be used for the magnetic layer serving as the
pinned magnetic layer. More specifically, examples include
Co.sub.0.5Fe.sub.0.5, Co.sub.0.5Pt.sub.0.5, Fe.sub.0.5Pt.sub.0.5.
Alternatively, since the magnetization direction of the pinned
magnetic layer can be fixed by the antiferromagnetic layer and the
like in a spin valve TMR element, the above-described magnetic
material with excellent soft magnetic properties may be used for
the magnetic layer serving as the pinned magnetic layer.
[0088] One of the first magnetic layer 3 and the second magnetic
layer 7 may include a laminated film structure (so-called laminated
ferrimagnetic structure) in which a pair of magnetic films are
laminated with a nonmagnetic film interposed therebetween. At this
time, when the pair of magnetic films are magnetically coupled via
the nonmagnetic film such that their magnetization directions are
antiparallel with respect to each other, it is possible to reduce a
leakage magnetic field generating from the end of the element,
thereby obtaining a TMR element with better properties.
Particularly, when the magnetic layer serving as the pinned
magnetic layer includes the above-described laminated ferrimagnetic
structure, it is possible to increase the magnetic anisotropy of
the pinned magnetic layer further, that is, to achieve a pinned
magnetic layer whose magnetization direction is less likely to
change by the magnetic field that is applied from the outside to
the element.
[0089] There is no particular limitation on the material used for
the nonmagnetic film as long as it is a nonmagnetic material, and
Ru, Cr, Cu or the like may be used, for example. The film thickness
may be, for example, in the range of at least 0.4 nm and at most
1.5 nm. The magnetic film may be a film containing, for example,
Fe, Co or Ni. The thickness of the magnetic film may be, for
example, in the range of at least 1 nm and at most 10 nm.
[0090] There is no particular limitation on the substrate 1 as long
as it is nonmagnetic, and Si, AlTiC, Al.sub.2O.sub.3 (e.g.,
sapphire) may be used, for example. The thickness may be, for
example, in the range of at least 0.1 .mu.m and at most 10 mm.
[0091] Additionally, in the example shown in FIGS. 1A to 1E, the
lower electrode layer 2 is laminated on the substrate 1. There is
no particular limitation on the material used for the lower
electrode layer 2 as long as it is an electrically conductive
material, and a low-resistance material (e.g., having a linear
resistivity of 100 .mu..OMEGA.cm or lower) such as Pt, Au, Cu, Ru,
Al or TiN may be used, for example. It is also possible to laminate
a plurality of films made of different materials. In the case of
laminating an upper electrode layer, the material used for the
upper electrode layer may be the same as that used for the lower
electrode layer. There is no particular limitation on the
thicknesses of the lower electrode layer and the upper electrode
layer, and they may be in the range of at least 10 nm and at most
10 .mu.m, for example.
[0092] In the production method of the present invention, it is
possible, as required, to laminate layers other than the layers
shown in FIGS. 1A to 1E. For example, an underlayer of Ta, Nb, Zr,
Pt, Cr, Ni--Fe or the like may be laminated between the lower
electrode layer 2 and the first magnetic layer 3 (between the lower
electrode layer and the antiferromagnetic layer, in the case of
laminating the antiferromagnetic layer). It is also possible to
laminate a plurality of tunnel insulating layers. In the case of
laminating a plurality of tunnel insulating layers, the
above-described third magnetic layer may be laminated between at
least one of the tunnel insulating layers and a magnetic layer on
the substrate side that is adjacent thereto.
[0093] In the production method of the present invention, pulse
laser deposition (PLD), ion beam deposition (IBD), sputtering using
cluster ion beam, RF, DC, electron cyclotron resonance (ECR),
helicon, induction coupled plasma (ICP) or facing targets,
molecular beam epitaxy (MBE) or ion plating, for example, may be
used as the method for forming each of the layers constituting the
TMR element. Other than these PVD processes, it is also possible to
use CVD processes, plating processes or sol-gel processes.
[0094] In the production method of the present invention, for
example, the following process may be used for the lamination and
the subsequent oxidation of the Al layer in the step (i) and the
step (ii). First, an Al layer is formed by a PVD process such as
sputtering, MBE or IBD, using Al as the target. Next, a tunnel
insulating layer made of Al--O may be formed by oxidizing the Al
layer by natural oxidation, plasma oxidation, radical oxidation,
ozone oxidation or the like.
[0095] Here, the natural oxidation is a process of oxidizing an Al
layer in pure oxygen gas, in a mixed gas of pure oxygen gas and
another gas (e.g., inert gas or rare gas) or in the atmosphere. In
the case of oxidation in pure oxygen or in a mixed gas of pure
oxygen and another gas, the partial pressure of oxygen may be, for
example, in the range of at least 1.times.10.sup.-2 Pa and at most
1.times.10.sup.5 Pa. The oxidation time may be, for example, in the
range of at least about 10 sec and at most about 100 min, and the
temperature may be, for example, in the range of at least
10.degree. C. and at most 100.degree. C.
[0096] Radical oxidation is a process in which oxygen gas is
dissociated into oxygen radicals having unpaired electrons with an
RF coil, ECR plasma or the like, and only the neutral components of
the generated oxygen radicals are utilized for oxidation. Plasma
oxidation is a process in which oxygen gas is made into a plasma by
substantially the same technique as that of the radical oxidation
and the oxygen radical with a highly oxidative oxygen radical or
ozone is used for oxidation. The degree of oxidation of an Al layer
using these techniques can be controlled by adjusting the partial
pressure of oxygen, the temperature, the time, the electric power
used for generating radicals or plasma and the like. The partial
pressure of oxygen may be, for example, in the range of at least
0.01 Pa and at most 10 Pa. The oxidation time may be, for example,
in the range of at least about 1 sec and at most about 100 min, and
the temperature may be, for example, in the range of at least
10.degree. C. and at most 100.degree. C. Under such conditions, it
is possible to form a dense tunnel insulating layer with few
crystal defects.
[0097] Additionally, in the case of nitriding or oxynitriding the
Al layer, nitrogen gas or a mixed gas of oxygen gas and nitrogen
gas may be used in place of oxygen gas in the above-described
processes.
[0098] The production method of the present invention further may
include the step of: (a) heat treating the laminate formed in the
step (iii), after the step (iii). Since the oxidation state in the
tunnel insulating layer can be made more uniform by performing heat
treatment, it is possible to obtain a TMR element with better
properties and thermal stability. The heat treatment may be
performed at a temperature in the range of, for example, at least
150.degree. C. and at most 500.degree. C., in vacuum, under reduced
pressure or in inert gas or rare gas. In the case of further
laminating an upper electrode layer after the step (iii), it also
may be performed either after or before such lamination.
[0099] In addition, it is also possible to obtain a TMR element
with better properties and thermal stability by using a single
crystal substrate as the substrate and a lower electrode layer
epitaxially grown on the substrate, or by smoothing the surface of
the lower electrode layer by a process such as chemical mechanical
polishing (CMP). This is because the roughness on the interface
between the third magnetic layer and the tunnel insulating layer
can be smoothed more effectively.
[0100] Next, the MR element of the present invention is
described.
[0101] FIG. 3 shows an example of the MR element of the present
invention. The MR element shown in FIG. 3 includes a tunnel
insulating layer 6 containing at least one compound selected from
the group consisting of an oxide, nitride and oxynitride of Al, a
first magnetic layer 3 and a second magnetic layer 7 that are
laminated so as to sandwich the tunnel insulating layer 6, and a
third magnetic layer 4 disposed between the first magnetic layer 3
and the tunnel insulating layer 6. The resistance value varies
depending on a relative angle between the magnetization directions
of the first magnetic layer 3 and the second magnetic layer 7.
Here, the third magnetic layer 4 has at least one crystal structure
selected from the group consisting of a face-centered cubic crystal
structure and a face-centered tetragonal crystal structure and is
(111) oriented parallel to the film plane of the third magnetic
layer 4.
[0102] By forming such a MR element, it is possible to achieve a
TMR element with excellent properties and thermal stability. Such a
MR element can be obtained, for example, by the above-described
production method of a MR element according to the present
invention
[0103] FIG. 4 shows another example of the MR element of the
present invention. The MR element shown in FIG. 4 is a TMR element
in which an antiferromagnetic layer 8 is further disposed on a side
opposite to a plane of the first magnetic layer 3 that faces the
tunnel insulating layer 6 in the MR element shown in FIG. 3. The
further disposition of the antiferromagnetic layer 8 makes it
possible to achieve a spin valve TMR element having the first
magnetic layer 3 as the pinned magnetic layer and the second
magnetic layer 7 as the free magnetic layer. Moreover, since the
third magnetic layer 4 is disposed between the tunnel insulating
layer 6 and the first magnetic layer 3, it is possible to achieve a
TMR element with excellent properties and thermal stability.
[0104] In the case of the MR element shown in FIG. 4, the
antiferromagnetic layer 8 also may be (111) oriented parallel to
its own film plane. This can achieve a TMR element with better
properties and thermal stability. Additionally, in the case of the
examples shown in FIGS. 3 and 4, the antiferromagnetic layer 8 also
may be disposed on the second magnetic layer 7. In this case, it is
possible to achieve a spin valve TMR element having the second
magnetic layer 7 as the pinned magnetic layer and the first
magnetic layer 3 as the free magnetic layer.
[0105] In the case of the examples of the MR element shown in FIGS.
3 and 4, the material used for each layer, the thickness, the
structure and the like of each layer may be the same as those
described in the production method of a MR element of the present
invention. This can achieve a TMR element having the effects
described in the production method of a MR element of the present
invention.
[0106] In the examples shown in FIGS. 3 and 4, the MR element
further may include a lower electrode layer, an upper electrode
layer, a substrate and the like. Also in this case, it is possible
to achieve a TMR element with excellent properties and thermal
stability, regardless of the surface roughness of the substrate,
the state of the crystal grain boundaries of the lower electrode
layer and the like. Conversely, the MR element does not need to
include a lower electrode layer, an upper electrode layer, a
substrate and the like, as shown in the examples of the
below-described device using a MR element.
[0107] Next, devices using the MR element of the present invention
are described.
[0108] In order to produce a magnetic device that contains a MR
element and passes an electric current in a direction perpendicular
to the film plane of the element, microfabrication may be performed
by combining techniques commonly used for the semiconductor process
or the manufacturing process of GMR heads. More specifically, it is
possible to combine, for example, a physical or chemical etching
process such as ion milling, reactive ion etching (RIE) or FIB
(Focused Ion Beam) etching with a photolithography technique using
a stepper for forming micropatterns, an electron beam (EB) process
or the like.
[0109] FIG. 5 shows an example of the MR element including
electrodes that has been produced by such a method. In the MR
element shown in FIG. 5, a lower electrode layer 103, a MR element
105, and an upper electrode layer 102 are laminated successively on
a substrate 104. Further, an interlayer insulating film 101 is
disposed around the MR element 105, as well as between the upper
electrode layer 102 and the lower electrode layer 103. The
interlayer insulating film 101 serves to prevent electric short
circuits between the upper electrode layer 102 and the lower
electrode layer 103. In the element shown in FIG. 5, it is possible
to pass a current through the MR element 105 sandwiched by the
upper electrode layer 102 and the lower electrode layer 103 and
read the voltage. Accordingly, with a configuration of the element
as shown FIG. 5, it is possible to pass a current in a direction
perpendicular to the film plane of the MR element 105 and read the
output. Additionally, CMP, cluster ion beam etching or ECR etching,
for example, may be used in order to smooth the surfaces of the
electrode layers and the like.
[0110] As the materials of the upper electrode layer 102 and the
lower electrode layer 103, the same materials as those of the
above-described upper electrode layer and lower electrode layer may
be used. For the interlayer insulating film 101, a material with
excellent insulating properties, such as Al.sub.2O.sub.3 or
SiO.sub.2, may be used.
[0111] FIG. 6 shows an example of the magnetic head using the MR
element of the present invention. FIG. 6 is a schematic view
showing a shield type magnetic head provided with a shield for
limiting the introduction of a magnetic field to the MR element
other than a magnetic field to be detected by the MR element. It
should be noted that a magnetic head 201 is shown in a
cross-sectional view in FIG. 6 for facilitating the
description.
[0112] The magnetic head 201 shown in FIG. 6 includes a pair of
shields made of a magnetic substance (an upper shield 206 and a
lower shield 208), and a MR element 210 is disposed in a read gap
209 formed by the above-described pair of shields.
[0113] The magnetic head 201 shown in FIG. 6 also includes a
writing head portion 202 for recording and a reading head portion
203 for read. At the time of recording information, a current
corresponding to the information to be recorded may be passed
through coils 204. The magnetic flux generated by the current that
has been passed through the coils 204 leaks out from a recording
gap 207 provided between an upper recording core 205 and the upper
shield 206, thereby performing the recording on a magnetic
recording medium placed in the vicinity of the recording gap 207.
In addition, an insulating portion 211 is formed between the upper
recording core 205 and the upper shield 206. This insulating
portion 211 is not always necessary, and may be formed as
required.
[0114] On the other hand, the reading of information is performed
as follows: the magnetic flux corresponding to the information
recorded on the above-described recording medium acts on the MR
element 210 through the read gap 209. Since the above-described
action of the magnetic flux changes the resistance value of the MR
element 210, this change may be detected. The magnetization
directions of the free layer and the fixed layer of the MR element
210 may be, for example, in a substantially orthogonal
relationship. If the MR element is not a spin valve MR element, the
magnetic layer whose magnetization direction is relatively easier
to change by an external magnetic field, of the pair of magnetic
layers sandwiching the tunnel insulating layer, may be used as the
free magnetic layer.
[0115] At this time, any magnetic field other than a magnetic field
to be detected by the MR element (i.e., the above-described
magnetic flux) is limited by the upper shield 206 and the lower
shield 208 in the magnetic head shown in FIG. 6, so that it is
possible to achieve a highly sensitive magnetic head. Further,
inclusion of the above-described MR element of the present
invention as the MR element 210 makes it possible to achieve a
magnetic head with excellent properties and thermal stability.
[0116] Although not shown in FIG. 6, a lower electrode layer and an
upper electrode layer are connected to the both film planes of the
MR element 210. Here, the upper and lower electrode layers may be
electrically insulated from the upper and lower shields by
disposing an insulating layer or the like. Alternatively, the upper
and lower electrode layers may be connected to the upper and lower
shields to form a structure in which the upper and lower shields
also serves as the upper and lower electrode layers. The sizes of
the recording gap 207 and the read gap 209 are, for example, in the
range of at least 0.01 .mu.m and at most 10 .mu.m.
[0117] As the materials of the upper shield 206 and the lower
shield 208, common soft magnetic materials such as an alloy of
Ni--Fe, Fe--Al--Si or Co--Nb--Zr may be used. Among them, soft
magnetic materials with excellent magnetic permeability are
preferable. For the insulating portion 211, a material with
excellent insulating properties such as Al.sub.2O.sub.3, AIN or
SiO.sub.2 may be used.
[0118] In order to control the magnetic domain of the free magnetic
layer in the MR element 210, it is also possible to apply a bias
magnetic field to the element by sandwiching the MR element 210 by
a magnetic film made of a material with high coercive force such as
an alloy of Co--Pt or Co--Pt--Cr.
[0119] FIG. 7 shows another example of the magnetic head using the
MR element of the present invention. The magnetic head shown in
FIG. 7 includes yokes 302 as a magnetic flux guiding portion for
guiding a magnetic field to be detected by the MR element to a MR
element 301. Inclusion of the above-described MR element of the
present invention as the MR element 301 makes it possible to
achieve a magnetic head with excellent properties and thermal
stability.
[0120] The yokes 302 may be disposed, for example, such that
magnetic field H is guided to the free magnetic layer of the MR
element (the side of the MR element 301 that is closer to the yokes
302 serves as the free magnetic layer in the example shown in FIG.
7). The yokes 302 also may be the free magnetic layer of the MR
element 301 (or a part of the same).
[0121] FIGS. 8A and 8B show yet another example of the magnetic
head using the MR element of the present invention. FIG. 8B is a
cross-sectional view obtained by cutting a magnetic head 311 shown
in FIG. 8A on plane A shown in FIG. 8A. The magnetic head 311 shown
in FIGS. 8A and 8B includes yokes (an upper yoke 303 and a lower
yoke 304) as a magnetic flux guiding portion for guiding a magnetic
field to be detected by the MR element 301 to the MR element 301.
The MR element 301 is disposed such that the upper yoke 303 and the
lower yoke 304 are magnetically connected to the MR element 301. At
this time, inclusion of the above-described MR element of the
present invention as the MR element 301 makes it possible to
achieve a magnetic head with excellent properties and thermal
stability.
[0122] In the magnetic head 311 shown in FIGS. 8A and 8B, the
magnetic field from a recording medium is guided from a read gap
308 to the MR element 301 by the upper yoke 303. In the case of the
example shown in FIGS. 8A and 8B, the MR element 301 is
electrically connected to an upper electrode layer 306 and a lower
electrode layer 305, so that the resistance value of the element
can be detected by applying a voltage to the element from the upper
and lower electrode layers.
[0123] In the example shown in FIGS. 8A and 8B, the upper yoke 303
and the lower yoke 304 are electrically insulated from the MR
element 301 by an insulating portion 307. The insulating portion
307, however, is not always necessary, and the upper yoke 303 and
the lower yoke 304 also may serve as the upper electrode layer 306
and the lower electrode layer 305, respectively. The MR element 301
may be disposed, for example, such that its free magnetic layer is
on the upper yoke 303 side. Additionally, the size of the read gap
308 is, for example, in the range of at least 0.01 .mu.m and at
most 10 .mu.m.
[0124] As the materials of the upper yoke 303 and the lower yoke
304, common soft magnetic materials such as Fe--Si--Al, Ni--Fe,
Ni--Fe--Co, Co--Nb--Zr, Co--Ta--Zr or Fe--Ta--N may be used. Among
them, soft magnetic materials with excellent magnetic permeability
are preferable. For the insulating portion 307, a material with
excellent insulating properties such as Al.sub.2O.sub.3, AIN or
SiO.sub.2 may be used.
[0125] In general, a magnetic head including yokes as shown in
FIGS. 8A and 8B (yoke type magnetic head) is inferior in
sensitivity to a magnetic head including shields as shown in FIG. 6
(shield type magnetic head); however, it is more advantageous in
terms of narrowing the gaps, because there is no need to dispose
the MR element in the read gap. That is, it is a magnetic head
capable of higher density magnetic recording. Moreover, since the
MR element is not exposed to a recording medium, less breakage and
wear are caused on the head by the contact between the recording
medium and the magnetic head, resulting in higher reliability.
Therefore, it can be said that the yoke type magnetic head is
superior, especially when used for a streamer using a magnetic tape
as the recording medium.
[0126] Magnetic recording devices such as a hard disk drive (HDD)
and a streamer can be configured by using the above-described
magnetic head of the present invention. FIG. 9 shows an example of
the magnetic recording device of the present invention. A magnetic
recording device 401 shown in FIG. 9 includes a magnetic head 405,
a driving portion 402, a magnetic recording medium 403 in which
information is recorded, and a signal processing portion 404. At
this time, use of the above-described magnetic head as the magnetic
head 405 makes it possible to achieve a magnetic recording device
with excellent properties and thermal stability.
[0127] FIGS. 10A and 10B show another example of the magnetic
recording device of the present invention. FIGS. 10A and 10B are
schematic views showing an example of the magnetic recording device
using a magnetic tape as the recording medium. More specifically,
FIG. 10A is a schematic view showing an example of the rotary drum
head in an example of the magnetic recording device of the present
invention.
[0128] A rotary drum head 451 shown in the FIG. 10A includes a
lower drum 452 and an upper rotary drum 453, and magnetic heads 454
are disposed on the outer circumferential surface of the upper
rotary drum 453. At the time of recording and reading information,
the magnetic tape serving as the recording medium may be run along
a lead 455 at an angle inclined with respect to the rotation axis
of the upper rotary drum 453. As a result, the magnetic heads 454
slide, maintaining the angle at which they are inclined with
respect to the running direction of the magnetic tape. In order to
allow the upper rotary drum 453 and the magnetic tape to slide and
run stably while keeping them in close contact with one another, a
plurality of grooves 456 are formed on the outer circumferential
surface of the upper rotary drum 453. The air and the like caught
between the magnetic tape and the upper rotary drum 453 can be
discharged from these grooves 456.
[0129] FIG. 10B shows an example of the magnetic recording device
using such a rotary drum head. The magnetic recording device shown
in FIG. 10B includes the rotary drum head 451, a supply reel 461, a
take-up reel 462, rotary posts 463, 464, 465, 466, 467 and 468,
inclined posts 469 and 470, a capstan 471, a pinch roller 472 and a
tension arm 473. As described above, the magnetic heads 454 are
disposed on the outer circumferential surface of the rotary drum
head 451. Of the magnetic heads 454, two magnetic heads for reading
(the remaining two are for recording) are disposed so as to
protrude by, for example, about 20 .mu.m from the outer
circumferential surface of the rotary drum. A magnetic tape 474
wound around the supply reel 461 can run by the lead-in operation
with the pinch roller 472 and the capstan 471. The magnetic tape
474 that has started from the supply reel 461 is guided by the
inclined posts 469 and 470 and pressed against the magnetic heads
454 disposed on the rotary drum head 451, and reading and/or
recording is performed. The magnetic tape 474 on which reading
and/or recording has been performed at the magnetic heads 454
passes between the pinch roller 472 and the capstan 471, and can be
wound around the take-up reel 462.
[0130] At this time, use of the above-described MR element of the
present invention as the magnetic heads 454 makes it possible to
achieve a magnetic recording device with excellent properties and
thermal stability.
[0131] Further, use of a yoke type magnetic head as shown in FIG. 8
as the magnetic heads 454 (especially as the magnetic heads 454 for
reading) can suppress the change in shape of the MR element due to
wear and the like, which is a problem in a helical scan method as
shown in FIGS. 10A and 10B. Moreover, it is possible to suppress
electrostatic breakdown of the MR element caused by the contact and
sliding of the magnetic tape, the corrosion of the MR element
caused by the reaction with the chemical substances contained in
the magnetic tape or the atmosphere and the like, so that it is
possible to achieve a more reliable magnetic recording device.
[0132] Next, FIG. 11 shows an example of the magnetic memory (MRAM)
using the MR element of the present invention as the memory
element. In the MRAM shown in FIG. 11, MR elements 601 are disposed
in the form of a matrix at the intersection points between bit
(sense) lines 602 and word lines 603 that are made of Cu, Al or the
like. The bit line and the word line correspond to an information
reading conductive line and an information recording conductive
line, respectively. With a compound magnetic field generated at the
time of passing a signal current through these lines, a signal is
recorded in the MR elements 601. The signal is recorded in the
elements (MR elements 601a in FIG. 11) disposed at positions where
the lines in the "ON" state intersect (two current matching
system). Use of the above-described MR element of the present
invention as the MR elements 601 makes it possible to achieve a
MRAM with excellent properties and thermal stability (e.g., with a
small bias voltage dependence, that is, capable of producing high
output).
[0133] The operations of the MRAM are described in more detail with
reference to FIGS. 12A to 14B. FIGS. 12A, 13A and 14A show basic
examples of the writing operation. On the other hand, FIGS. 12B,
13B and 14B show basic examples of the reading operation. MR
elements 701 are the above-described MR elements of the present
invention.
[0134] In the MRAM shown in FIGS. 12A and 12B, in order to read the
magnetization state of the MR elements 701 individually, a
switching element 705 such as a FET is disposed for each of the
elements. This MRAM is suitable for production on CMOS substrates.
In the MRAM shown in FIGS. 13A and 13B, a nonlinear element 706 is
provided for each of the elements. As the nonlinear element 706, it
is possible to use for example, a varistor, a tunnel element, the
above-described three terminal element or the like. It is also
possible to use a rectifying element in place of the nonlinear
element. This MRAM can be formed on a low cost glass substrate by
using the film forming process for diodes. In the MRAM shown in
FIGS. 14A and 14B, the MR elements 701 are disposed directly at the
intersection points between word lines 704 and bit lines 703,
without using a switching element or a nonlinear element as shown
in FIGS. 12A to 13B. As a result, a current is passed through a
plurality of elements at the time of reading in the case of this
MRAM, so that it is preferable, in terms of the reading accuracy,
to limit the number of the elements to at most 10000, for
example.
[0135] In the MRAMs shown in FIGS. 12A to 14B, the bit lines 703
are also used as the sense lines that pass a current through the
elements and read the change in resistance. However, the sense
lines may be disposed separately from the bit lines, in order to
prevent the malfunction and the breakdown of the elements caused by
a bit current. In this case, it is preferable to dispose the bit
lines in parallel with respect to the sense lines, while keeping
the electrical insulation with the elements. Additionally, the
spacing between the MR element and each of the world lines and the
sense lines may be, for example, at most 500 nm, in terms of the
power consumption at the time of writing.
EXAMPLES
[0136] The present invention is described below in further detail
according to examples. However, the present invention is not
limited to the following examples.
[0137] TMR elements with the film structures described in the
examples are produced on substrates (3 inch .phi.) by DC and RF
magnetron sputtering, and their MR properties were evaluated.
[0138] The magnetic resistance measurement for obtaining the MR
ratio was performed by a DC four-terminal method, while applying an
external magnetic field of 8.times.10.sup.4 A/m (1 kOe) at the
maximum in the same direction as the direction of the easy axis of
magnetization of the pinned layer of each element. The MR ratio was
calculated by the following Equation (1), taking the maximum
resistance value as R.sub.max and the minimum resistance value as
R.sub.min, each of which was obtained by the magnetic resistance
measurement.
MR ratio={(R.sub.max-R.sub.min)/R.sub.min}.times.100(%) (1)
[0139] In addition, R.sub.min (.OMEGA.).times.element area
(.mu.m.sup.2) was taken as the junction resistance value
(.OMEGA..multidot..mu.m.sup.2) of the elements. At this time, in
order to correct the variations in junction resistance value caused
by the element size (e.g., element area), the leakage current in
the tunneling layer and the like, elements having different element
areas (e.g., three types of elements having element areas of 1
.mu.m.sup.2, 10 .mu.m.sup.2 and 100 .mu.m.sup.2, (the film
structure and the like are the same for all of the elements)) were
prepared to obtain their respective junction resistance values, and
the average value was used. The element area refers to the area of
the element when viewed from its film plane direction. The element
size refers to the size of the element when viewed from its film
plane direction.
[0140] The crystal structure of each of the layers such as the
third magnetic layer was evaluated by X-ray diffraction (XRD). For
example, whether the (111) plane in the third magnetic layer was
grown in parallel with respect to its own film plane was confirmed
by whether any diffraction peak corresponding to the crystal plane
(111) was present in the results of the XRD and the integrated
intensity thereof was larger than the integrated intensities of
other diffraction peaks. More specifically, it was determined that
the (111) plane in the third magnetic layer was grown in parallel
with respect to its own film plane and the third magnetic layer has
good orientation and crystallinity in the (111) direction, when the
rocking curve half width of the diffraction peaks corresponding to
the crystal plane (111) was 10.degree. or less. Whether the third
magnetic layer had the fcc structure or the fct structure was also
evaluated by XRD. A technique commonly used in a reflective wide
angle X-ray diffraction (WAXD) was used for the XRD measurement.
For a closer examination, a measurement to cause X-rays to be
reflected directly on the film plane of a layer to be measured was
also carried out.
Example 1
[0141] Si substrate with a thermally oxidized film/Ta (3)/Pt
(100)/Ta (3)/Ni.sub.0.8Fe.sub.0.2 (3)/X/Al--O
(0.5)/Co.sub.0.75Fe.sub.0.25 (3)/Ir.sub.0.8Mn.sub.0.2 (10)
[0142] Here, the numerical values in the parentheses represent the
film thickness. The unit is nm, and the film thickness is
hereinafter represented in the same manner. However, the value of
Al--O is the design film thickness value (total value) of Al prior
to oxidation. Al--O was produced by forming an Al film in a
thickness of at least 0.1 nm and at most 0.5 nm, and thereafter
repeating a one-minute oxidation at room temperature in an
atmosphere containing oxygen of 26.3 kPa (200 Torr) (natural
oxidation).
[0143] As the substrate, a Si substrate with a thermally oxidized
film (thickness of the thermally oxidized film: 500 nm) was used.
Ta (3)/Pt (100)/Ta (3) on the substrate is a lower electrode layer.
Ni.sub.0.8Fe.sub.0.2 (3) is a first magnetic layer,
Co.sub.0.75Fe.sub.0.25 (3) is a second magnetic layer,
Ir.sub.0.8Mn.sub.0.2 (10) is an antiferromagnetic layer, and the MR
element in Example 1 is a spin valve MR element having the second
magnetic layer as the pinned magnetic layer.
[0144] X is a third magnetic layer made of a magnetic material
having a composition as shown in the following TABLE 1. In Example
1, one sample (Sample A) that did not contain X as the comparative
example and three samples (Samples 1-1 to 1-3) as the examples were
prepared.
[0145] The film formation of each sample was performed in a chamber
evacuated to a pressure of 1.3.times.10.sup.-6 Pa
(1.times.10.sup.-8 Torr) or lower. For each sample, Ta (15)/Pt (10)
was laminated on the antiferromagnetic layer, as a part of an upper
electrode layer serving also as a protective layer. Thereafter,
each sample was microfabricated in a mesa shape as shown in FIG. 5
by photolithography and ion milling, and after forming
Al.sub.2O.sub.3 as an interlayer insulating film by sputtering, a
through hole was formed in the upper portion, on which an upper
electrode made of Ta (3)/Cu (500)/Pt (10) was formed, thereby
producing a MR element. The element size was 2 .mu.m.times.4 .mu.m
for all the samples. The produced MR elements were subjected to
heat treatment for three hours at 250.degree. C. in a magnetic
field of 4.0.times.10.sup.5 A/m (5 kOe) (in a vacuum of
1.3.times.10.sup.-3 Pa or lower).
[0146] After the heat treatment, the MR ratio as the MR properties
of each sample was determined, and the junction resistance value of
each sample was determined.
[0147] TABLE 1 shows the resulting MR ratios (%) and junction
resistance values (.OMEGA..multidot..mu.m.sup.2) for the samples,
together with the compositions and the thickness of X in the
samples.
1TABLE 1 junction X: composition MR ratio resistance value sample
(thickness) (%) (.OMEGA. .multidot. .mu.m.sup.2) A none 12 6
(Comparative Example) 1-1 Fe.sub.0.6Pd.sub.0.4 (3) 23 7 1-2
Fe.sub.0.2Ni.sub.0.7Au.sub.0.1 (2) 25 6 1-3
Fe.sub.0.35Co.sub.0.35Pt.sub.0.3 (1.5) 30 4
[0148] As shown in TABLE 1, Sample A, in which X was not disposed,
yielded an MR ratio of only about 12%, although having a junction
resistance value as small as 6 .OMEGA..multidot..mu.m.sup.2. In
addition, when the thickness of the Al--O layer was doubled to 1 nm
in Sample A, the MR ratio increased to 31%; however, the junction
resistance value greatly increased to 600
.OMEGA..multidot..mu.m.sup.2. This shows that the junction
resistance value and the MR ratio are difficult to attain at the
same time.
[0149] In contrast, Samples 1-1, 1-2 and 1-3, in each of which X
was disposed, all had a junction resistance value of 10
.OMEGA..multidot..mu.m.sup.2 or less, while yielding a MR ratio as
large as 20% or more. This shows that the disposition of X between
the first magnetic layer and the tunnel insulating layer achieved a
TMR element with excellent properties. In addition, when the same
measurement was carried out by varying the size of the elements, no
significant element size dependency was observed, and similar
results were obtained in the case of, for example, the sample with
an element size of 0.1 .mu.m.times.0.1 .mu.m.
[0150] Next, the cross-sectional structure of each sample was
evaluated with a transmission electron microscope (TEM).
[0151] A roughness as shown in FIGS. 2A and 2B, presumably
resulting from the crystal grain growth of Pt, was observed on the
respective interfaces of Ta (3)/Pt (100)/Ta (3) serving as the
lower electrode layer of each sample. The shape was such that "d"
was about 20 nm and "h" was about 2 nm, using the periodicity d and
the height h shown in FIGS. 2A and 2B.
[0152] In the case of Sample A, the same roughness as that observed
on the lower electrode layer was observed also on the interface of
each of the layers in the MR element.
[0153] By contrast, in the case of each of Samples 1-1 to 1-3,
although the same roughness as that observed on the lower electrode
layer was observed on the interface between the first magnetic
layer and the third magnetic layer, no such roughness was observed
on the interface between the third magnetic layer and the tunnel
insulating layer and the interface was smooth. Furthermore, the
surface of each of the layers laminated on the tunnel insulating
layer was also smooth, proving that the disposition of the third
magnetic layer X improved the smoothness of the interface between
the tunnel insulating layer and the first magnetic layer and
resulted in the formation of a tunnel insulating layer having a
uniform thickness.
[0154] Additionally, the crystal structure of the third magnetic
layer X was evaluated for Samples 1-1 to 1-3 by XRD upon the
formation of a tunnel insulating layer made of Al--O. As a result,
in the case of Samples 1-1 to 1-3, the crystal structure of the
third magnetic layer X was a crystal structure showing the (111)
orientation in parallel with respect to its own film plane In the
case of Samples 1-1 and 1-2, the crystal structure of the third
magnetic layer X was a face-centered cubic crystal structure (fcc
structure), whereas in the case of Sample 1-3, the crystal
structure of the third magnetic layer X was a face-centered
tetragonal crystal structure (fct structure). In the results of the
XRD measurement on the third magnetic layer X for Samples 1-1 to
1-3, the rocking curve half width of the diffraction peaks
corresponding to the crystal plane (111) was 10.degree. or less for
all the samples.
[0155] In addition, similar results were obtained also when the
composition ratios of the first magnetic layer, the second magnetic
layer and the antiferromagnetic layer were different.
Example 2
[0156] Si single crystal substrate/Ag (5)/Cu
(100)/Ni.sub.0.8Fe.sub.0.2 (4)/X/Al--O (2)/Co.sub.0.5Fe.sub.0.5
(3)/Co.sub.0.5Pt.sub.0.5 (10)
[0157] As the substrate, a Si single crystal substrate (crystal
orientation plane: (111)) was used. Ag (5)/Cu (100) on the
substrate is a lower electrode layer. The lower electrode layer was
grown epitaxially on the substrate made of Si single crystal, and
(111) oriented parallel to its own film plane.
[0158] Ni.sub.0.8Fe.sub.0.2 (4) is a first magnetic layer, and
Co.sub.0.5Fe.sub.0.5 (3) is a second magnetic layer.
Co.sub.0.5Pt.sub.0.5 (10) is a high coercive force layer made of a
magnetic material with high coercive force, and the second magnetic
layer adjacent thereto can serve as a pinned magnetic layer.
Accordingly, the MR element in Example 2 is a spin valve MR element
having the second magnetic layer as the pinned magnetic layer.
[0159] Al--O (2) is a tunnel insulating layer, which was formed by
plasma oxidation, after forming an Al layer in a thickness of 2 nm.
The plasma oxidation was performed by generating an oxygen plasma
by supplying an RF power of 150 W to a one-turn coil in a mixed gas
of Ar and O.sub.2 whose oxygen partial pressure was adjusted to 75%
of the total pressure (total pressure: 0.1 Pa (0.8 mTorr)) with an
oxidation time of 180 seconds.
[0160] X is a third magnetic layer made of a magnetic material
having each of the compositions shown in the following TABLE 2. In
Example 2, one sample (Sample B) that did not contain X as the
comparative example and three samples (Samples 2-1 to 2-3) as the
examples were prepared.
[0161] The film formation of each sample was performed in the same
manner as in Example 1. For each sample, Ta (15)/Pt (10) was
laminated on the high coercive force layer, as a part of an upper
electrode layer serving also as a protective layer. Thereafter,
each sample was microfabricated in a mesa shape in the same manner
as in Example 1, and after forming an interlayer insulating film
made of Al.sub.2O.sub.3, a through hole was formed in the upper
portion, on which an upper electrode made of Ta (3)/Cu (500)/Pt
(10) was formed, thereby producing a MR element. The element size
was 1 .mu.m.times.3 .mu.m for all the samples. The produced MR
elements were subjected to heat treatment for 10 hours at
200.degree. C. in a magnetic field of 4.times.10.sup.5 A/m (5 kOe)
(in a vacuum of 1.3.times.10.sup.-3 Pa or lower).
[0162] After the heat treatment, the MR ratio was measured as the
MR properties of each sample, and the bias voltage dependence of
each sample was evaluated. The bias voltage dependence was
evaluated by first obtaining a MR ratio when the bias voltage was
approximately 0 (e.g., 50 mV or lower) and then determining a bias
voltage (V.sub.h) when the MR ratio was half the initial value by
applying a bias voltage to the element. It is believed that the
greater the value V.sub.h, the smaller the bias voltage dependence
of the element is.
[0163] For each of the samples of Example 2, before forming the
tunnel insulating layer, the arithmetical mean roughness (R.sub.a)
of the plane of the magnetic layer on which the tunnel insulating
layer was to be formed i.e., the surface of the third magnetic
layer X in the case of Samples 2-1 to 2-3, and the surface of the
first magnetic layer in the case of Sample B) was evaluated with an
atomic force microscope (AFM). The AFM measurement was performed in
the chamber used for the film formation while maintaining the
reduced pressure, without exposing each sample to the atmosphere.
When the crystal structure of the third magnetic layer X in Samples
2-1 to 2-3 was analyzed by XRD as in Example 1, the crystal
structure of the third magnetic layer X was a crystal structure
showing the (111) orientation in parallel with respect to its own
film plane in each of the samples.
[0164] TABLE 2 shows the measurement results of V.sub.h (mV) and
R.sub.a (nm), together with the compositions and the thickness of X
in the samples.
2 TABLE 2 X: composition V.sub.h R.sub.a sample (thickness) (mV)
(nm) B none 550 1.5 (Comparative Example) 2-1
Fe.sub.0.65Ni.sub.0.15Pt.sub.0.- 2 (2) 940 0.4 2-2
Fe.sub.0.2Ni.sub.0.7Au.sub.0.1 (5) 850 0.6 2-3
Fe.sub.0.05Co.sub.0.55Ag.sub.0.4 (1.5) 790 0.5
[0165] As shown in TABLE 2, in the case of Samples 2-1 to 2-3, in
each of which X was provided, V.sub.h was greater, that is, the
bias voltage dependence was smaller, as compared with Sample B, in
which X was not provided. Moreover, it was found that in the case
of Samples 2-1 to 2-3, the degree of surface roughness on the plane
of the magnetic layer on which the tunnel insulating layer was
formed was smaller, as compared with Sample B. Therefore, it is
believed that providing X can reduce the roughness on the interface
between the tunnel insulating layer and the magnetic layer adjacent
thereto, the variation in thickness of the tunnel insulating layer,
etc.
[0166] In addition, similar results were obtained also when the
composition ratios of the first magnetic layer, the second magnetic
layer and the high coercive force layer were different.
Example 3
[0167] Sample C (Comparative Example): Si substrate with a
thermally oxidized film/Ta (3)/Cu (100)/Ta (3)/Ni.sub.0.8Fe.sub.0.2
(6)/Al--O (1.2)/Co.sub.0.5Fe.sub.0.5 (3)/Ir.sub.0.8Mn.sub.0.2
(12)
[0168] Sample 3-1: Si substrate with a thermally oxidized film/Ta
(3)/Cu (100)/Ta (3)/Ni--Fe--Cr (4)/Pt.sub.0.5Mn.sub.0.5
(15)/Co.sub.0.75Fe.sub.0- .25 (4)/Fe.sub.0.75Pt.sub.0.25 (2) Al--O
(0.7)/Co.sub.0.9Fe.sub.0.1 (2)/Ni.sub.0.8Fe.sub.0.2 (4)
[0169] Sample 3-2: Si substrate with a thermally oxidized film/Ta
(3)/Cu (100)/Ta (3)/Ni--Fe--Cr (4)/Ir.sub.0.8Mn.sub.0.2
(10)/Co.sub.0.9Fe.sub.0.- 1 (4)/Fe.sub.0.6Pd.sub.0.4 (2)/Al--N
(1.4)/Ni.sub.0.6Fe.sub.0.4 (5)
[0170] Sample 3-3: Si substrate with a thermally oxidized film/Ta
(3)/Cu (100)/Ta (3)/Ni--Fe--Cr (4)/Pt.sub.0.5Mn.sub.0.5
(20)/Co.sub.0.75Fe.sub.0- .25 (3)/Ru (0.8)/Co.sub.0.75Fe.sub.0.25
(1)/Fe.sub.0.6Ni.sub.0.15Pt.sub.0.- 25 (2)/Al--O
(1.0)/Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (2)/Co.sub.0.9Fe.sub.0.1
(5)
[0171] As the substrate, a Si substrate with a thermally oxidized
film (thickness of the thermally oxidized film: 500 nm) was used.
Ta (3)/Cu (100)/Ta (3) on the substrate is a lower electrode.
Ni--Fe--Cr (4) in Samples 3-1 to 3-3 is an underlayer.
[0172] In Sample C, Ni.sub.0.8Fe.sub.0.2 (6) is a first magnetic
layer, Co.sub.0.5Fe.sub.0.5 (3) is a second magnetic layer, and
Ir.sub.0.8Mn.sub.0.2 (12) is an antiferromagnetic layer. Sample C
is a spin valve MR element having the second magnetic layer as the
pinned magnetic layer.
[0173] In Sample 3-1, Pt.sub.0.5Mn.sub.0.5 (15) is an
antiferromagnetic layer, Co.sub.0.75Fe.sub.0.25 (4) is a first
magnetic layer, Fe.sub.0.75Pt.sub.0.25 (2) is a third magnetic
layer, and Co.sub.0.9Fe.sub.0.1 (2)/Ni.sub.0.8Fe.sub.0.2 (4) is a
second magnetic layer. Sample 3-1 is a spin valve MR element having
the first magnetic layer and the third magnetic layer as the pinned
magnetic layers.
[0174] In Sample 3-2, Ir.sub.0.8Mn.sub.0.2 (10) is an
antiferromagnetic layer, Co.sub.0.9Fe.sub.0.1 (4) is a first
magnetic layer, Fe.sub.0.6Pd.sub.0.4 (2) is a third magnetic layer,
and Ni.sub.0.6Fe.sub.0.4 (5) is a second magnetic layer. Sample 3-2
is a spin valve MR element having the first magnetic layer and the
third magnetic layer as the pinned magnetic layers.
[0175] In Sample 3-3, Pt.sub.0.5Mn.sub.0.5 (20) is an
antiferromagnetic layer, Co.sub.0.75Fe.sub.0.25 (3)/Ru
(0.8)/Co.sub.0.75Fe.sub.0.25 (1) is a first magnetic layer
including a laminated ferrimagnetic structure,
Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (2) is a third magnetic layer, and
Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (2)/Co.sub.0.9Fe.sub.0.1 (5) is a
second magnetic layer. Sample 3-3 is a spin valve MR element having
the first magnetic layer and the third magnetic layer as the pinned
magnetic layers.
[0176] Al--O (1.2) serving as the tunnel insulating layer of Sample
C was formed by plasma oxidation, after forming an Al layer in a
thickness of 1.2 nm. The plasma oxidation was performed by
generating an oxygen plasma by supplying an RF power of 150 W to a
one-turn coil in a mixed gas of Ar and O.sub.2 whose oxygen partial
pressure was adjusted to 75% of the total pressure (total pressure:
0.1 Pa (0.8 mTorr)) with an oxidation time of 30 seconds.
[0177] Al--O (0.7) serving as the tunnel insulating layer of Sample
3-1 was formed by natural oxidation (for one minute) in pure oxygen
of 26.3 kPa (200 Torr), after forming an Al layer in a thickness of
0.7 nm.
[0178] Al--N (1.4) serving as the tunnel insulating layer of Sample
3-2 was formed by plasma nitriding, after forming an Al layer in a
thickness of 1.4 nm. The plasma nitriding was performed by
generating an nitrogen plasma by supplying an RF power of 200 W to
a one-turn coil in a mixed gas of Ar and N.sub.2 whose nitrogen
partial pressure was adjusted to 80% of the total pressure (total
pressure: 0.1 Pa (0.8 mTorr)) with a nitriding time of 40
seconds.
[0179] Al--O (1.0) serving as the tunnel insulating layer of Sample
3-3 was formed by natural oxidation, after forming an Al layer.
However, it was formed by multi-step oxidation in which Al (0.4)
was laminated and oxidized first, then Al (0.3) was laminated
thereon and oxidized, and Al (0.3) was further laminated and
oxidized. That is, the tunnel insulating layer of Sample 3-3 is
presumed to be a multilayer film of Al--O (0.4)/Al--O (0.3)/Al--O
(0.3). The oxidation conditions were all the same for each of the
steps, and the oxidation was performed for one minute (at room
temperature) in an atmosphere containing oxygen of 26.3 kPa (200
Torr).
[0180] The film formation of each sample was performed in the same
manner as in Example 1. For each sample, Ta (15)/Pt (10) was
laminated on the second magnetic layer, as a part of an upper
electrode layer serving also as a protective layer. Thereafter,
each sample was microfabricated in a mesa shape as in Example 1,
and after forming an interlayer insulating film made of
Al.sub.2O.sub.3, a through hole was formed in the upper portion, on
which an upper electrode made of Cu (500)/Pt (100) was formed,
thereby producing a MR element. The element size was 0.1
.mu.m.times.0.2 .mu.m for all the samples. The produced MR elements
were subjected to heat treatment for 8 hours at 280.degree. C. in a
magnetic field of 4.times.10.sup.5 A/m (5 kOe) (in a vacuum of
1.3.times.10.sup.-3 Pa or lower).
[0181] In Example 3, the degree of roughness on the surface of each
layer, (e.g., the surface of the lower electrode layer when the
lower electrode layer is laminated, and the surface of the third
magnetic layer when the third magnetic layer is laminated) was
first evaluated in the film formation process of the element with
an AFM. As in Example 2, the AFM measurement was performed while
maintaining the reduced pressure, without exposing each sample to
the atmosphere.
[0182] For each sample, a roughness presumably attributed to the
crystal grains of Cu was observed on the surface of the lower
electrode layer at the stage of the lamination of the lower
electrode layer. With the periodicity d and the height h shown in
FIGS. 2A and 2B, "d" was about 55 nm, and "h" was about 6 nm. The
size of the periodicity d was about the same level as the size of
the crystal grains of Cu obtained from the results of the XRD
measurement on the Cu layer included in the lower electrode layer.
The size of the crystal grains of Cu was calculated by analyzing
the half width of the diffraction peaks corresponding to the
crystal plane of Cu obtained by the XRD measurement, using the
Scherrer equation.
[0183] TABLE 3 shows the values of the height h of the surface of
the antiferromagnetic layer at the stage of the lamination of the
antiferromagnetic layer, and the surface of the third magnetic
layer at the stage of the lamination of the third magnetic layer.
It should be noted that for Sample C, the value of the height h of
the surface of the first magnetic layer at the stage of the
lamination of the first magnetic layer is shown in the column of
the third magnetic layer.
3 TABLE 3 h (nm) antiferromagnetic third magnetic sample layer
layer C -- 5 (Comparative Example) 3-1 1.5 0.5 3-2 1.7 0.6 3-3 1.4
0.6
[0184] As shown in TABLE 3, the degrees of roughness on the
surfaces of the antiferromagnetic layers in Samples 3-1 to 3-3 were
such that "h" was about 1.4 nm to 1.7 nm. This indicates that the
disposition of the underlayer and the antiferromagnetic layer
between the lower electrode layer and the first magnetic layer
reduced the roughness (h=6 nm) observed on the surface of the lower
electrode layer. Presumably, the degrees of roughness on the
surfaces of the first magnetic layers in Samples 3-1 to 3-3 are
such that "h" is about 1.5 nm, as with the case of the surfaces of
the antiferromagnetic layers. Additionally, the disposition of the
third magnetic layer reduced the degrees of roughness on the
surfaces of the third magnetic layers to about 0.5 nm, showing that
the surfaces were smoothed further. In contrast, the degree of
roughness on the surface of the first magnetic layer in Sample C
was about the same as the degree of roughness on the surface of the
lower electrode layer. It is believed that the surface roughness of
the lower electrode directly influences the surface of the first
magnetic layer.
[0185] As a result of evaluating the crystal structures of the
antiferromagnetic layers and the third magnetic layers in Samples
3-1 to 3-3 by XRD, it was confirmed that they each had the fcc
structure or the fct structure and were (111) oriented parallel to
their own film planes. Additionally, the underlayers had the fcc
structure.
[0186] Next, in order to examine the thermal stability of each of
the MR elements produced in the above-described manner, each sample
was subjected to heat treatment at 280.degree. C. to 450.degree.
C., and the MR ratio after the heat treatment was determined. The
heat treatment was performed by holding each sample for 0.5 hour at
the respective temperatures shown in TABLE 4. In addition, the
magnetic resistance measurement for obtaining the MR ratio was
performed after cooling the heat-treated elements to room
temperature. The results are shown in TABLE 4.
4 TABLE 4 MR ratio after heat treatment at respective temperatures
(%) sample 280.degree. C. 300.degree. C. 350.degree. C. 370.degree.
C. 400.degree. C. 450.degree. C. C 28 30 16 5 2 0 3-1 35 38 35 34
33 32 3-2 26 25 24 22 24 22 3-3 45 46 45 44 44 42
[0187] As shown in TABLE 4, Samples 3-1 to 3-3, in each of which
the underlayer and the antiferromagnetic layer were disposed
between the lower electrode layer and the first magnetic layer, and
the third magnetic layer was disposed between the first magnetic
layer and the tunnel insulating layer, exhibited better thermal
stability than Sample C.
[0188] In addition, similar results were obtained also when the
composition ratios of the first magnetic layer, the second magnetic
layer and the antiferromagnetic layer were different.
Example 4
[0189] Shield type magnetic heads as shown in FIG. 6 were produced
using the MR elements (Sample 1-3 and Sample A) produced in Example
1, and their properties were evaluated.
[0190] An Al.sub.2O.sub.3--TiC substrate was used as the substrate
of the magnetic heads, and a Ni.sub.0.8Fe.sub.0.2 alloy was used
for the upper recording core, upper shield and lower shield. A
laminated film of Cu, Pt and Ta was used for the electrode layers
(the upper electrode layer and lower electrode layer) sandwiching
the MR element, and a portion of the upper shield and a portion of
the lower shield were used as the upper electrode layer and the
lower electrode layer, respectively.
[0191] Anisotropy was provided for the MR elements in such a manner
that the easy direction of magnetization of the magnetic layer
corresponding to the free magnetic layer was perpendicular to the
direction of a signal magnetic field to be detected (i.e., in the
track width direction), and that the magnetization direction of the
magnetic layer corresponding to the pinned magnetic layer was in
parallel with respect to the direction of a signal magnetic field
to be detected. Such an anisotropy was provided by first defining
the magnetization direction of the pinned magnetic layer by a heat
treatment in a magnetic field (280.degree. C., 4.0.times.10.sup.5
A/m (5 kOe)) and then defining the easy direction of magnetization
of the free magnetic layer by a heat treatment in a magnetic field
(200.degree. C., 8.0.times.10.sup.3 A/m (100 Oe)), after producing
the MR elements. The size of the MR elements was 0.5
.mu.m.times.0.5 .mu.m, which corresponds to the track width and the
MR height, respectively. The read gap of the magnetic head was 0.1
.mu.m.
[0192] As a result of evaluating the S/N ratios (signal-to-noise
ratios) of the magnetic heads thus produced, the S/N ratios of the
magnetic head including Sample 1-3 was improved by 8 dB, as
compared with the magnetic head including Sample A.
Example 5
[0193] Yoke type magnetic heads as shown in FIGS. 8A and 8B were
produced, and their properties were evaluated.
[0194] A Ni--Fe alloy film with high magnetic permeability was used
for the lower yoke. After the lower yoke was formed, its surface
was polished by CMP, and an insulating portion made of
Al.sub.2O.sub.3 and a lower electrode layer made of a laminated
film of Ta/Cu/Ta were formed thereon, followed by forming MR
elements with the film structures shown below. For the formation of
the MR elements, the same methods as in Example 1 were used.
[0195] Sample 5-1: Pt.sub.0.5Mn.sub.0.5 (15)/Co.sub.0.75Fe.sub.0.25
(3)/Ru (0.8)/Co.sub.0.75Fe.sub.0.25
(1)/Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (2)/Al--O
(0.7)/Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (1)/Ni.sub.0.8Fe.sub.0.2
(2)
[0196] Sample E (Comparative Example): Pt.sub.0.5Mn.sub.0.5
(15)/Co.sub.0.75Fe.sub.0.25 (3)/Ru (0.8)/Co.sub.0.75Fe.sub.0.25
(3)/Al--O (0.7)/Co.sub.0.9Fe.sub.0.1 (1)/Ni.sub.0.8Fe.sub.0.2
(2)
[0197] Pt.sub.0.5Mn.sub.0.5 (15) is an antiferromagnetic layer, and
Co.sub.0.75Fe.sub.0.25 (3)/Ru (0.8)/Co.sub.0.75Fe.sub.0.25 (1) is a
first magnetic layer including a laminated ferrimagnetic structure.
Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (2) and
Fe.sub.0.6Ni.sub.0.15Pt.sub.0.25 (1) in Sample 5-1 are third
magnetic layers. Additionally, in Sample 5-1, Ni--Fe--Cr (4) was
laminated between the lower electrode layer and the
antiferromagnetic layer as the underlayer of the antiferromagnetic
layer.
[0198] For the both samples, the Al--O layer serving as the tunnel
insulating layer was formed by natural oxidation for 10 minutes in
pure oxygen of 26.3 kPa (200 Torr), after laminating an Al layer in
a thickness of 0.7 nm. The size of the MR elements was 2
.mu.m.times.6 .mu.m.
[0199] At the time of producing the magnetic head, the element was
disposed such that the long side of the element was perpendicular
to the plane A shown in FIG. 8A. In addition, a laminated film made
of Ta/Pt/Cu was used for the upper electrode layer, and an
insulating layer made of SiO.sub.2 was formed between the upper
electrode layer and the upper yoke in order to prevent electric
short circuits. For the upper yoke, a soft magnetic film made of
Cu--Mo--Ni--Fe was used.
[0200] As in Example 4, anisotropy was provided for the MR elements
in such a manner that the easy direction of magnetization of the
magnetic layer corresponding to the free magnetic layer was
perpendicular to the direction of a signal magnetic field to be
detected (in a direction perpendicular to the plane A shown in FIG.
8A) and that the magnetization direction of the magnetic layer
corresponding to the pinned magnetic layer was in parallel with
respect to the direction of a signal magnetic field to be detected
(in a direction parallel with respect to the plane A shown in FIG.
8A). However, the magnetic field of the heat treatment in a
magnetic field for defining the easy direction of magnetization of
the free magnetic layer was 4.times.10.sup.4 A/m (500 Oe). In
addition, the length of the read gap of the magnetic head was 0.5
.mu.m.
[0201] A test was performed, in which each of the magnetic heads
produced in the above-described manner was placed in a constant
temperature bath at 180.degree. C., and held there for 50 days with
a voltage of 200 mV applied to the MR element, and the MR outputs
before and after the test were compared. The following method was
used for the measurement of the MR outputs.
[0202] The magnetic head was placed in a Helmholtz coil, and, while
applying a current to the MR element, the magnetic resistance
obtained at this time was measured by a DC four-terminal method. At
the time of measuring the magnetic resistance, the magnetic field
for measurement was varied within the range of
.+-.4.0.times.10.sup.4 A/m. The difference between the maximum
value and the minimum value of the magnetic resistance thus
obtained was taken as the MR output of the magnetic head. The
direction of the magnetic field for measurement to be generated by
the Helmholtz coil was the easy direction of magnetization of the
pinned magnetic layer of the MR element.
[0203] As a result of evaluation, the magnetic head using Sample E
as the MR element had an output decrease as great as about 38%
before and after the test. In contrast, the magnetic head using
Sample 5-1 as the MR element had an output decrease within about 1%
before and after the test, and exhibited very stable output
characteristics after the test.
[0204] In addition, similar results were obtained also when the
composition ratios of the first magnetic layer, the second magnetic
layer and the high coercive force layer were different.
Example 6
[0205] Magnetic memories (MRAMs) including no switching element as
shown in FIGS. 14A and 14B were produced, using the MR elements
(Sample 3-1, Sample 3-3 and Sample C) produced in Example 3.
However, the thickness of the tunnel insulating layer of Sample 3-1
was 1.2 nm, and the thickness of the tunnel insulating layer of
Sample 3-2 was 1.4 nm.
[0206] The MRAMs were produced as follows. First, a word line made
of Cu was formed on a Si substrate having a thermally oxidized firm
of 500 nm, and an insulating film made of Al.sub.2O.sub.3 was
formed on the surface. Subsequently, a lower electrode layer made
of Cu was formed. At this time, the surface of the lower electrode
layer was smoothed by CMP, and then the MR element with the film
structure of Sample 3-1, Sample 3-3 or Sample C was laminated. The
size of the MR elements was 1 .mu.m.times.2 .mu.m.
[0207] Next, the produced MR elements were subjected to a heat
treatment in a magnetic field at 280.degree. C. and
4.0.times.10.sup.5 A/m (5 kOe) for 5 hours. The magnetic field was
applied in the direction of the long side of the elements.
Thereafter, as in Example 1, the MR elements were formed by
microfabricating the samples in a mesa shape. Finally, a bit line
made of Cu was formed as an upper electrode layer, thereby
producing a single magnetic memory element including no switching
element as shown in FIGS. 14A and 14B.
[0208] A magnetic field was applied to the produced magnetic memory
by passing a current through the word line and the bit line so as
to reverse the magnetization direction of the free magnetic layer
of the MR element, thus recording a "0". Next, a magnetic field was
applied by passing a current through the word line and the bit line
in a direction opposite to that of the previous current so as to
reverse the magnetization direction of the free magnetic layer,
thus recording a "1". Then, a sense current was supplied to the MR
elements in the respective states by applying a bias voltage (about
400 mV) thereto, and the difference in the element voltages in the
states of "0" and "1"; as a result, the magnetic memories including
the MR elements of Samples 3-1 and 3-3 yielded an output of 100 mV
or more. On the other hand, in the case of the magnetic memory
including the MR element of Sample C, the output was less than 100
mV, although it was possible to read the "0" and the "1". The
reason is presumably that the bias voltage dependence of the MR
elements of Samples 3-1 and 3-3 is smaller than that of the MR
element of Sample C.
[0209] Next, the above-described MR elements were disposed on CMOS
substrates, and integrated magnetic memories in which the MR
elements were disposed in the form of a matrix as shown in FIG. 11
were produced. The element arrangement included a total of 8
blocks, each block having a memory of 16.times.16 elements. The
disposition of the MR elements was performed as follows. First,
after disposing FETs serving as the switching elements in the form
of a matrix on the CMOS substrate and smoothing the surface by CMP,
the MR elements having the film structure of Sample 3-1, Sample 3-2
or Sample C were disposed in the form of a matrix in correspondence
with the FETs. The size of the MR elements was 0.1 .mu.m.times.0.25
.mu.m.
[0210] After the disposition of the MR elements, heat treatment in
a magnetic field (280.degree. C., 4.times.10.sup.5 A/m (5 kOe), 10
hours) was performed first. The magnetic field was applied in the
direction of the long side of the MR elements. Thereafter, hydrogen
sintering was performed at 400.degree. C. It should be noted that
one element in each block was a dummy element for canceling the
wiring resistance, the minimum element resistance, the FET
resistance and the like. Additionally, Cu was used for all of the
word lines and the bit lines.
[0211] An 8-bit signal was recorded on the thus produced magnetic
memory by simultaneously performing the magnetization reversals of
the free magnetic layers of 8 elements per each block by a
synthetic magnetic field generated by the word lines and the bit
lines. Next, the gate of the FET of one element per each block was
turned ON to supply a sense current to the elements. At this time,
the voltages generated in the bit line, the elements and the FETs
in each block were compared with a dummy voltage by a comparator,
and the outputs of the respective elements were read.
[0212] As a result of the measurement, the MRAM using Sample C as
the MR element yielded no element output at all. On the other hand,
the MRAMs using Samples 3-1 and 3-3 as the MR element yielded a
good element output, as with the case of the above-described single
magnetic memory. From this result, it can be said that Samples 3-1
and 3-3 had a sufficient thermal stability to heat treatment at
400.degree. C., whereas Sample C was not able to withstand heat
treatment at 400.degree. C.
[0213] As described above, according to the present invention, it
is possible to provide a TMR element with excellent properties and
thermal stability and a method for producing such a TMR element. It
is also possible to provide a magnetic head, a magnetic memory and
a magnetic recording device that are excellent in properties and
thermal stability.
[0214] The present invention may be embodied in other forms without
departing from the spirit or essential characteristics thereof The
embodiments disclosed in this application are to be considered in
all respects as illustrative and not limiting. The scope of the
invention is indicated by the appended claims rather than by the
foregoing description, and all changes which come within the
meaning and range of equivalency of the claims are intended to be
embraced therein.
* * * * *