U.S. patent application number 10/855445 was filed with the patent office on 2004-11-04 for electro-optical device.
This patent application is currently assigned to Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Hirakata, Yoshiharu, Nishi, Takeshi, Yamazaki, Shunpei.
Application Number | 20040218112 10/855445 |
Document ID | / |
Family ID | 27527842 |
Filed Date | 2004-11-04 |
United States Patent
Application |
20040218112 |
Kind Code |
A1 |
Hirakata, Yoshiharu ; et
al. |
November 4, 2004 |
Electro-optical device
Abstract
In an active matrix semiconductor display device in which pixel
TFTs and driver circuit TFT are formed on the same substrate in an
integral manner, the cell gap is controlled by gap retaining
members that are disposed between a pixel area and driver circuit
areas. This makes it possible to provide a uniform cell thickness
profile over the entire semiconductor display device. Further,
since conventional grainy spacers are not used, stress is not
imposed on the driver circuit TFTs when a TFT substrate and an
opposed substrate are bonded together. This prevents the driver
circuit TFTs from being damaged.
Inventors: |
Hirakata, Yoshiharu;
(Atsugi-shi, JP) ; Nishi, Takeshi; (Atsugi-shi,
JP) ; Yamazaki, Shunpei; (Setagaya, JP) |
Correspondence
Address: |
ERIC ROBINSON
PMB 955
21010 SOUTHBANK ST.
POTOMAC FALLS
VA
20165
US
|
Assignee: |
Semiconductor Energy Laboratory
Co., Ltd.
398 Hase Kangawa-ken
Atsugi-shi
JP
243-0036
|
Family ID: |
27527842 |
Appl. No.: |
10/855445 |
Filed: |
May 28, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10855445 |
May 28, 2004 |
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10236957 |
Sep 9, 2002 |
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6743650 |
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10236957 |
Sep 9, 2002 |
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09793116 |
Feb 27, 2001 |
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6465268 |
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09793116 |
Feb 27, 2001 |
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09083041 |
May 22, 1998 |
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Current U.S.
Class: |
349/56 ;
257/E27.111; 349/122; 349/84 |
Current CPC
Class: |
H01L 27/12 20130101;
H01L 27/1248 20130101; G02F 1/13454 20130101; H01L 27/1214
20130101; G02F 1/1339 20130101 |
Class at
Publication: |
349/056 ;
349/084; 349/122 |
International
Class: |
G02F 001/1333; G02F
001/1339 |
Foreign Application Data
Date |
Code |
Application Number |
May 22, 1997 |
JP |
09-148540 |
May 26, 1997 |
JP |
09-152805 |
Jun 9, 1997 |
JP |
09-167990 |
Jun 23, 1997 |
JP |
09-183024 |
Claims
What is claimed is:
1. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a gap retaining member adjacent to a second substrate by
patterning; forming a vertical alignment film adjacent to the
second substrate; disposing a liquid crystal layer between the
first substrate and the second substrate.
2. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate;
disposing a liquid crystal layer between the first substrate and
the second substrate.
3. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate;
disposing a liquid crystal layer between the first substrate and
the second substrate, wherein said vertical alignment film is not
treated with a rubbing treatment.
4. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a gap retaining member adjacent to a second substrate by
patterning; forming an alignment film adjacent to the second
substrate; disposing a liquid crystal layer between the first
substrate and the second substrate, wherein said display device is
an ECB mode device.
5. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming an alignment film adjacent to the second substrate;
disposing a liquid crystal layer between the first substrate and
the second substrate, wherein said display device is an ECB mode
device.
6. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming an alignment film adjacent to the second substrate;
disposing a liquid crystal layer between the first substrate and
the second substrate, wherein said vertical alignment film is not
treated with a rubbing treatment, and wherein said display device
is an ECB mode device.
7. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a gap retaining member adjacent to a second substrate by
patterning; forming a vertical alignment film adjacent to the
second substrate; disposing a liquid crystal layer between the
first substrate and the second substrate, wherein said display
device is an ECB mode device.
8. A method of manufacturing a display device comprising: forming a
switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate;
disposing a liquid crystal layer between the first substrate and
the second substrate, wherein said display device is an ECB mode
device.
9. A method of a display device comprising: forming a switching
element adjacent to a first substrate; forming a pixel electrode
electrically connected to the switching element; forming a second
electrode adjacent to a second substrate; forming a gap retaining
member adjacent to the second electrode by patterning; forming a
vertical alignment film adjacent to the second substrate; disposing
a liquid crystal layer between the first substrate and the second
substrate, wherein said vertical alignment film is not treated with
a rubbing treatment, and wherein said display device is an ECB mode
device.
10. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a gap retaining member adjacent to a second substrate by
patterning; forming a vertical alignment film adjacent to the
second substrate after the formation of the gap retaining member;
disposing a liquid crystal layer between the first substrate and
the second substrate.
11. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate
after the formation of the gap retaining member; disposing a liquid
crystal layer between the first substrate and the second
substrate.
12. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate
after the formation of the gap retaining member; disposing a liquid
crystal layer between the first substrate and the second substrate,
wherein said vertical alignment film is not treated with a rubbing
treatment.
13. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a gap retaining member adjacent to a second substrate by
patterning; forming an alignment film adjacent to the second
substrate after the formation of the gap retaining member;
disposing a liquid crystal layer between the first substrate and
the second substrate, wherein said display device is an ECB mode
device.
14. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming an alignment film adjacent to the second substrate after
the formation of the gap retaining member; disposing a liquid
crystal layer between the first substrate and the second substrate,
wherein said display device is an ECB mode device.
15. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming an alignment film adjacent to the second substrate after
the formation of the gap retaining member; disposing a liquid
crystal layer between the first substrate and the second substrate,
wherein said vertical alignment film is not treated with a rubbing
treatment, and wherein said display device is an ECB mode
device.
16. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a gap retaining member adjacent to a second substrate by
patterning; forming a vertical alignment film adjacent to the
second substrate after the formation of the gap retaining member;
disposing a liquid crystal layer between the first substrate and
the second substrate, wherein said display device is an ECB mode
device.
17. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate
after the formation of the gap retaining member; disposing a liquid
crystal layer between the first substrate and the second substrate,
wherein said display device is an ECB mode device.
18. A method of manufacturing a display device comprising: forming
a switching element adjacent to a first substrate; forming a pixel
electrode electrically connected to the switching element; forming
a second electrode adjacent to a second substrate; forming a gap
retaining member adjacent to the second electrode by patterning;
forming a vertical alignment film adjacent to the second substrate
after the formation of the gap retaining member; disposing a liquid
crystal layer between the first substrate and the second substrate,
wherein said vertical alignment film is not treated with a rubbing
treatment, and wherein said display device is an ECB mode
device.
19. The method according to any one of claims 1 to 18 wherein said
switching element comprises an inverted staggered thin film
transistor.
20. The method according to any one of claims 1 to 18 wherein said
gap retaining member comprises an ultraviolet curable resin.
21. The method according to any one of claims 1 to 18 wherein said
gap retaining member comprises a photocurable polyimide.
22. The method according to any one of claims 1 to 18 wherein said
gap retaining member a thermosetting resin.
23. The method according to any one of claims 1 to 18 wherein said
gap retaining member has a streamlined shape.
24. The method according to any one of claims 1 to 18 wherein said
gap retaining member has an ellipse shape.
25. The method according to any one of claims 1 to 18 wherein said
gap retaining member has a polygon shape.
26. The method according to any one of claims 1 to 18 wherein said
gap retaining member is 2.0-5.0 .mu.m in height.
27. The method according to any one of claims 1 to 18 wherein said
gap retaining member is formed at a density of 40-160/mm.sup.2.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor display
device using thin-film transistors. In particular, the invention
relates to a semiconductor display device in which a pixel
switching circuit and driver circuits are formed on the same
substrate in an integral manner.
[0003] 2. Description of the Related Art
[0004] In recent years, the techniques of forming semiconductor
devices, such as thin-film transistors (TFTs), by using a
semiconductor thin film formed on an inexpensive glass substrate
have made rapid progress. This is because of increased demand for
active matrix liquid crystal display devices.
[0005] In active matrix liquid crystal display devices, TFTs are
provided for respective ones of hundreds of thousands to millions
of pixel regions that are arranged in matrix and charge that enters
or exits from each pixel electrode is controlled by the switching
function of the associated TFT.
[0006] The basic configuration of an active matrix liquid crystal
display device in which thin-film transistors are arranged will be
described below with reference to FIGS. 34A and 34B. FIG. 34A is a
sectional view obtained by cutting a liquid crystal display device
by a plane perpendicular to a substrate, specifically taken along a
chain line A-A' in FIG. 34B.
[0007] An insulating film (not shown) is formed on the surface of a
transparent base substrate 1. Reference numeral 2 denotes an active
layer of a TFT; 3, a gate electrode; 4, a data line; 5, a drain
electrode; 6, an interlayer insulating film; 7, a black matrix; 8,
a transparent conductive film as a pixel electrode; and 9, an
alignment film.
[0008] In this specification, the structure including the base
substrate 1 and the other members mentioned above (including the
TFTs) is called an "TFT substrate." Although FIG. 34A focuses on a
single pixel, actually the TFT substrate is composed of a pixel
area including hundreds of thousands to millions of pixel switching
TFTs (called pixel TFTs) and peripheral driver circuit areas
including a number of TFTs for driving the pixel TFTS.
[0009] On the other hand, reference numerals 10-12 denote a
transparent substrate, a transparent conductive film as an opposed
electrode, and an alignment film, respectively. The structure
including these members, which is opposed to the TFT substrate, is
called an "opposed substrate."
[0010] As shown in FIG. 35A, the TFT substrate 20 and the opposed
substrate 30 are subjected to an alignment treatment such as
rubbing for giving proper alignment to a liquid crystal.
Thereafter, to control a substrate interval (cell gap) between the
TFT substrate 20 and the opposed substrate 30, grainy spacers 41
are uniformly scattered over the entire surface of the TFT
substrate 20. Then, a sealing agent 42 is printed. The sealing
agent 42 has a role of an adhesive for bonding the substrates 20
and 30 together as well as a role of a sealing material for sealing
the space between the substrates 20 and 30 to prevent a liquid
crystal material that will be injected there from leaking to the
outside of the substrates.
[0011] FIG. 36 is a sectional view of the TFT substrate 20. Since
the grainy spacers 41 are uniformly scattered over the entire
surface of the TFT substrate 20 to control the cell gap, the
spacers 41 exist in not only the pixel area 22 but also the
peripheral driver circuit regions 23 as shown in FIG. 36. Usually,
the pixel TFTs formed in the pixel area 22 are not much different
in device size from the driver circuit TFTs formed in the driver
circuit areas 23. However, the black matrix for covering the pixel
TFTs, the pixel electrodes that are transparent conductive films,
and other members are formed in the pixel area 22. Further, in
reflection-type liquid crystal display devices, a reflective
electrode is formed in the pixel area 22. On the other hand,
connection lines necessary to constitute CMOS circuits for driving
the pixel TFTs are formed in the driver circuit areas 23.
Therefore, there are differences in the height (distance) from the
surface of the base substrate 1 between the pixel area 22 and the
driver circuit areas 23.
[0012] A description will now be made of a case where the height as
measured from the surface of the substrate 1 in the pixel area 11
is greater than in the driver circuit areas 23. The grainy spacers
41 are scattered in not only the pixel area 22 but also the driver
circuit areas 23 by a wet or dry method. If the grainy spacers 41
have approximately uniform sizes, they have differences in the
height as measured from the substrate 1 depending on their
positions. Now, the height of the top of each spacer 41 in the
pixel area 22 and that of the top of each spacer 41 in the driver
circuit areas 23 are represented by hp and hd, respectively As seen
from FIG. 36, a height difference .DELTA.h=hp--hd occurs due to the
difference in height between the pixel area 22 and the driver
circuit areas 23.
[0013] Then, as shown in FIG. 37A, the TFT substrate 20 and the
opposed substrate 30 are bonded together with the sealing agent 42.
Thereafter, the space between the TFT substrate 20 and the opposed
substrate 30 are filled with a liquid crystal material 43 and a
liquid crystal injection inlet 44 is sealed with a sealing material
(see FIG. 37B). In this manner, an active matrix liquid crystal
display device having the configuration shown in FIG. 34A is
obtained.
[0014] However, the liquid crystal display device having the above
configuration has the following problems.
[0015] Because of the height difference ah that is caused by the
difference in height between the pixel area 22 and the driver
circuit areas 23, the cell gas cannot be made uniform, that is, a
cell thickness variation occurs, when the TFT substrate 20 and the
opposed substrate 30 are bonded together. Further, as shown in
FIGS. 37A and 37B, strain occurs in the opposed substrate 30.
Defects such as display unevenness and an interference fringe (on
the top surface of the opposed substrate) may occur in a liquid
crystal display device having a cell thickness variation and strain
in the opposed substrate 30.
[0016] Where the height as measured from the substrate 1 in the
driver circuit areas 23 is greater than in the pixel area 22,
because of the above-described height difference Ah, unduly strong
force is exerted on the spacers 41 that are scattered in the driver
circuit areas 23 when the TFT substrate 20 and the opposed
substrate 30 are bonded together. As a result, the driver circuit
TFTs having a more complex structure than the pixel TFTs are
damaged considerably, which adversely affects the yield of
products.
[0017] Where grainy spacers 15 exist in the pixel area, disorder in
image display (disclination) may be observed as shown in FIG. 34B
because the alignment of the liquid crystal material is disordered
in the vicinity of the spacers 15.
[0018] As described above, where the cell gap is controlled by
using conventional grainy spacers, satisfactory display may not be
obtained due to various factors.
[0019] In liquid crystal display devices that are commonly
manufactured or manufactured as trial products, the cell gap
appears to be set at 4-6 .mu.m irrespective of the pixel pitch.
However, in the future, liquid crystal panels will be required to
have higher resolution and hence the pixel pitch will be
increasingly reduced.
[0020] For example, projection-type liquid crystal display devices
are desired to be able to display images having as high resolution
as possible in view of the fact that the images are projected onto
a screen in an enlarged manner. Also from the viewpoint of the
cost, the optical system needs to be miniaturized and the panel
size needs to be reduced. For the above reasons, in the future, it
will be necessary to manufacture liquid crystal display devices
having a pixel pitch of 40 .mu.m or less, preferably 30 .mu.m or
less.
[0021] In liquid crystal display devices for displaying such high
resolution images, even grainy spacers of several micrometers in
diameter may deteriorate display quality when they exist in the
effective display area.
[0022] Further, when a liquid crystal material is injected, the
flow of the liquid crystal material forces conventional grainy
spacers themselves to flow. As a result, a uniform spacer
dispersion density profile may not be obtained, to cause a cell
thickness variation.
[0023] Because of their characteristics, liquid crystal display
devices using a ferroelectric liquid crystal that attract much
attention recently and reflection-type liquid crystal display
devices are required to have small cell gaps.
[0024] However, with conventional grainy spacers, it is generally
difficult to produce a cell having a small, uniform-profile cell
gap.
SUMMARY OF THE INVENTION
[0025] An object of the present invention is to provide a
semiconductor display device that is free of a cell thickness
variation and display unevenness by producing a cell having a
small, uniform-profile cell gap that is hard to realize with
conventional grainy spacers.
[0026] Another object of the invention is to prevent TFTs from
being damaged by preventing unnecessary stress that would otherwise
be exerted on the TFTs in bonding substrates together when
conventional grainy spacers are used.
[0027] According to one aspect of the invention, there is provided
an electro-optical device comprising a first substrate comprising a
pixel area having a plurality of thin-film transistors and a
plurality of pixel electrodes electrically connected to the
respective thin-film transistors; a driver circuit area provided at
a location separate from the pixel area and having a plurality of
driver circuits having a plurality of thin-film transistors for
driving the thin-film transistors in the pixel area; and a base
substrate; a second substrate that confronts the first substrate; a
plurality of gap retaining members; and a sealing member for
bonding the first and second substrates together, wherein a
distance from a surface of the base substrate to a surface of the
pixel area is different from a distance from the surface of the
base substrate to a surface of the driver circuit area and wherein
the gap retaining members are formed in an area other than the
pixel area and the driver circuit area. The above objects can be
attained by this electro-optical device.
[0028] According to another aspect of the invention, there is
provided an electro-optical device comprising a TFT substrate
comprising a pixel area having a plurality of pixel electrodes
arranged in matrix form and a plurality of pixel thin-film
transistors electrically connected to the respective pixel
electrodes; a driver circuit area having a driver circuit having a
plurality of thin-film transistors for driving the pixel thin-film
transistors; and a base substrate; an opposed substrate that
confronts the TFT substrate; a display medium held between the TFT
substrate and the opposed substrate, an optical response of the
display medium being controlled by an application voltage; and a
plurality of gap retaining members, wherein a distance from a
surface of the base substrate to a surface of the pixel area is
different from a distance from the surface of the base substrate to
a surface of the driver circuit area and wherein the gap retaining
members are formed in an area other than the pixel area and the
driver circuit area. The above objects can be attained by this
electro-optical device.
[0029] The above-mentioned optical medium may be such that its
optical characteristic is modulated in accordance with the
application voltage.
[0030] The above-mentioned display medium may be a liquid
crystal.
[0031] The above-mentioned display medium may be a mixed layer of a
liquid crystal material and a polymer.
[0032] The above-mentioned display medium may be an
electroluminescence element.
[0033] The above-mentioned gap retaining members may be formed
around the pixel area.
[0034] The arrangement density of the above-mentioned gap retaining
members may be uniform in the pixel area.
[0035] Each of the above-mentioned gap retaining members may be
shaped like a cylinder.
[0036] Each of the above-mentioned gap retaining members may be
shaped like an elliptical pole.
[0037] Each of the above-mentioned gap retaining members may be
shaped like a polygonal prism.
[0038] Each of the above-mentioned gap retaining members may be
shaped so as not to obstruct a flow of the liquid crystal when it
is injected.
[0039] The side face of each of the above-mentioned gap retaining
members may be tapered.
[0040] The above-mentioned gap retaining members may be made of one
material selected from the group consisting of polyimide, acrylic,
polyamide, and polyimideamide.
[0041] The above-mentioned gap retaining members may be made of an
ultraviolet curable resin.
[0042] The above-mentioned gap retaining members may be made of an
epoxy resin.
[0043] According to another aspect of the invention, the top
surfaces of the respective gap retaining members on the side of one
of the first and second substrates have been planarized by chemical
mechanical polishing. In this electro-optical device, since the
cell gap is controlled by planarizing the top surfaces of the gap
retaining members, a small cell thickness having a uniform profile
over the entire electro-optical device can be obtained. Even if the
gap retaining members are formed on the pixel area or the driver
circuits, a uniform cell thickness profile can be obtained.
[0044] To attain the above objects, according to another aspect of
the invention, there is provided an electro-optical device
comprising a first substrate comprising a pixel area having a
plurality of pixel electrodes and switching elements connected to
the respective pixel electrodes; a second substrate confronting the
first substrate; and a gap retaining member that is provided on the
second substrate and retains an interval between the first and
second substrates.
[0045] To attain the above objects, according to a further aspect
of the invention, there is provided an electro-optical device
comprising a first substrate comprising a pixel area having a
plurality of pixel electrodes and switching elements connected to
the respective pixel electrodes; a second substrate confronting the
first substrate; a liquid crystal sealed in a space between the
first and second substrates; a first alignment film that is formed
on a surface of the first substrate and orients a liquid crystal; a
second alignment film that is formed on the second substrate and
orients the liquid crystal; and a gap retaining member that is
provided on the second substrate and retains an interval between
the first and second substrates.
[0046] In the above two electro-optical devices, the use of the gap
retaining members provides the following advantages. First, it is
not longer necessary to use spacers. Second, since the height of
the gap retaining members can be set as desired, the interval
between the substrates can be determined as desired. Third, since
the gap retaining members are fixed, they are not gathered unlike
the conventional spacers. Therefore, point defects do not
occur.
[0047] In the above two electro-optical devices, the position of
the gap retaining members can be set as desired. For example, the
gap retaining members can be provided in an area that substantially
confronts the pixel area. In this case, it is preferable that the
gap retaining members be provided at locations that are not used
for display, for instance, on a black matrix of color filters and
bus lines in the pixel area. Alternatively, by providing the gap
retaining members in an area that does not confront the pixel area,
the interval between the substrates can be retained without causing
no influences on the display.
[0048] Where the invention is applied to an electro-optical device
in which a first substrate (TFT substrate) is provided with a pixel
area and a driver circuit area having driver circuits for driving
switching elements that are provided in the pixel area, it is
preferable that the gap retaining members be provided on a second
substrate (opposed substrate) in an area that does not confront the
driver circuit area. In this case, it is possible to prevent the
driver circuits from being damaged or destroyed by stress that is
imposed by the gap retaining members.
[0049] According to the invention, since the gap retaining members
are provided on the second substrate, influences (solvent or
etchant-related influences, mechanical impact, etc.) of the
formation of the gap retaining members do not affect the first
substrate. Provided with the pixel area and the driver circuits,
the first substrate has a much higher integration density than the
second substrate. In view of this, the gap retaining members are
provided on the second substrate to minimize the number of
processes that are executed on the first substrate.
[0050] Further, by providing the gap retaining members on the
second substrate, the conditions that are set in selecting a
material are relaxed. For example, where the invention is applied
to a TFT-type liquid crystal display device, since pixel TFTs and
driver circuit TFTs are formed in the first substrate (TFT
substrate), it is necessary to select a material capable of
providing a sufficiently large selective etching ratio to the
material of those TFTs.
[0051] On the other hand, only such members as an opposed electrode
and color filters are formed on the second substrate (opposed
substrate), that is, the number of materials used in the second
substrate is smaller than in the first substrate. Thus, the number
of conditions to be set in selecting a material is small. Further,
a material such as that of an etching liquid, an etching gas, or
the like and means that are necessary to form the gap retaining
members can be selected from wider ranges.
[0052] To make it possible to uniformize the interval between the
substrates, it is preferable that the gap retaining members be made
of a planarization material capable of canceling out the asperity
of the base member. For example, the gap retaining members may be
made of a resin material selected from polyimide, acrylic,
polyamide, and polyimideamide, an ultraviolet curable resin, or a
thermosetting resin as typified by an epoxy resin.
[0053] The above resin materials are frequently used as interlayer
insulating films of the TFT substrate (first substrate). In such a
case, it is difficult to provide a large selective etching ratio if
the gap retaining members made of a resin material are provided on
the TFT substrate. This is the reason why in the invention the gap
retaining members are formed on the opposed substrate (second
substrate).
BRIEF DESCRIPTION OF THE DRAWINGS
[0054] FIGS. 1A-1B are top views of a TFT substrate and an opposed
substrate, respectively, according to a first embodiment of the
present invention;
[0055] FIGS. 2A-2E and 3A-3B show a manufacturing process of the
TFT substrate according to the first embodiment;
[0056] FIGS. 4A-4D show a manufacturing process of gap retaining
members according to the first embodiment;
[0057] FIGS. 5A and 5B are a top view and a perspective view,
respectively, of an active matrix liquid crystal display device
according to the first embodiment;
[0058] FIG. 6 is a sectional view of the active matrix liquid
crystal display device according to the first embodiment;
[0059] FIGS. 7A-7D and 8A-8B show a manufacturing process of an
active matrix liquid crystal display device according to a second
embodiment of the invention;
[0060] FIG. 8C is an enlarged view of a gap retaining member
according to the second embodiment; FIG. 9 is a top view of the
active matrix liquid crystal display device according to the second
embodiment;
[0061] FIG. 10 is a top view of an active matrix liquid crystal
display device according to a third embodiment of the
invention;
[0062] FIGS. 11A-11C show a manufacturing process of an active
matrix liquid crystal display device according to a fourth
embodiment of the invention;
[0063] FIG. 12A is a top view of the active matrix liquid crystal
display device according to the fourth embodiment;
[0064] FIG. 12B is an enlarged view showing a relationship between
gap retaining members and a liquid crystal material flowing
direction in the fourth embodiment;
[0065] FIGS. 13A-13C and 14A-14B show a process of forming gap
retaining members according to a fifth embodiment of the
invention;
[0066] FIGS. 15A and 15B are a top view and an enlarged perspective
view, respectively, of an active matrix liquid crystal display
device according to the fifth embodiment;
[0067] FIG. 16 is a top view of an active matrix liquid crystal
display device according to a sixth embodiment of the
invention;
[0068] FIG. 17 is a top view of an active matrix liquid crystal
display device according to a seventh embodiment of the
invention;
[0069] FIG. 18 is a schematic sectional view of a liquid crystal
display device according to a tenth embodiment of the
invention;
[0070] FIG. 19 is a sectional view of a TFT substrate according to
the tenth embodiment;
[0071] FIGS. 20A-20E show a manufacturing process of an opposed
substrate according to the tenth embodiment;
[0072] FIGS. 21A and 21B are a top view and an enlarged perspective
view of the opposed substrate according to the tenth
embodiment;
[0073] FIG. 22 is a top view of an opposed substrate according to a
thirteenth embodiment of the invention;
[0074] FIG. 23 is a top view of an opposed substrate according to a
fourteenth embodiment of the invention;
[0075] FIGS. 24A and 24B are top views of opposed substrates
according to a fifteenth embodiment of the invention;
[0076] FIGS. 25A and 25B are a top view and an enlarged perspective
view, respectively, of an opposed substrate according to a
sixteenth embodiment of the invention;
[0077] FIG. 26 is a top view of another opposed substrate according
to the sixteenth embodiment;
[0078] FIG. 27 is a top view of an opposed substrate according to a
seventeenth embodiment of the invention;
[0079] FIG. 28 is a schematic perspective showing the configuration
of a passive matrix liquid crystal panel according to an eighteenth
embodiment of the invention;
[0080] FIGS. 29A-29F and 30A-30B show a manufacturing process of
the passive matrix liquid crystal panel according to the eighteenth
embodiment;
[0081] FIG. 31 is a schematic sectional view of the passive matrix
liquid crystal panel according to the eighteenth embodiment;
[0082] FIG. 32 is a top view of a substrate showing an arrangement
of gap retaining members according to the eighteenth
embodiment;
[0083] FIG. 33 is a top view of a substrate showing an arrangement
of gap retaining members according to a modification of the
eighteenth embodiment;
[0084] FIGS. 34A and 34B are a sectional view and a plan view,
respectively, of a conventional active matrix liquid crystal
display device;
[0085] FIGS. 35A and 35B show a manufacturing process of the
conventional active matrix liquid crystal display device;
[0086] FIG. 36 is a sectional view of a TFT substrate of the
conventional active matrix liquid crystal display device; and
[0087] FIGS. 37A and 37B are sectional views of the conventional
active matrix liquid crystal display device.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Embodiment 1
[0088] This embodiment will be described with reference to FIGS.
1A-1B to 6. This embodiment is directed to a case where the
invention is applied to an active matrix liquid crystal display
device. FIG. 1A is a top view of a TFT substrate and FIG. 1B is a
top view of an opposed substrate.
[0089] As shown in FIG. 1A, a TFT substrate 100 consists of a
substrate 101 and a pixel area 102 and driver circuit areas 103 and
104 that are formed on the substrate 101. Pixel electrodes, TFTs
that are connected to the respective pixel electrodes, and other
members are arranged in the pixel area 102. Driver circuits for
driving the TFTs in the pixel area 102 are arranged in the driver
circuit areas 103 and 104.
[0090] As shown in FIG. 1B, an opposed substrate 200 consists of a
substrate 201, an area 202 to confront the pixel area 102 of the
TFT substrate 100, and areas 203 and 204 to confront the respective
driver circuit areas 103 and 104. The TFT substrate 100 and the
opposed substrate 200 are bonded together with a sealing agent 205
that is provided on a peripheral portion of the substrate 201. An
opposed electrode is formed in the pixel-confronting area 202 of
the opposed substrate 200.
[0091] As shown in FIG. 6, the TFT substrate 100 and the opposed
substrate 200 confront each other, a liquid crystal 300 is injected
through a liquid crystal injection inlet 206 into the space between
the substrates 100 and 200, and the liquid crystal is sealed with a
sealing agent 205. Alignment films for giving proper alignment to
the liquid crystal are formed to constitute the surfaces of the TFT
substrate 100 and the opposed substrate 200.
[0092] Next, a manufacturing method of the TFT substrate 100 will
be described with reference to FIGS. 2A-2E and 3A-3B. The
right-hand portions of FIGS. 2A-2E and 3A-3B show a manufacturing
process of a TFT that is to be formed in the pixel area 102 and the
left-hand portions show a manufacturing process of TFTs to be
formed in the driver circuit areas 103 and 104, respectively.
[0093] First, as shown in FIG. 2A, a silicon oxide film as an
undercoat insulating film 121 for preventing impurity diffusion
from a glass substrate 101 is formed on the glass substrate 101 at
a thickness of 100-300 nm. The silicon oxide film may be formed by
sputtering or plasma CVD in an oxygen atmosphere. In this
embodiment, a 200-nm-thick silicon oxide film is formed by plasma
CVD by using a TEOS gas as a material. If a quartz substrate is
used as the substrate 101, the undercoat insulating film 121 can be
omitted.
[0094] Then, an amorphous or polycrystalline silicon film is formed
at a thickness of 30-150 nm, preferably 50-100 nm, by plasma CVD or
LPCVD. To crystallize the silicon film, thermal annealing is
performed at a temperature higher than 500.degree. C., preferably
800-900.degree. C. After the silicon film is crystallized by
thermal annealing, optical annealing may be performed to improve
the crystallinity. Further, as disclosed in Japanese Unexamined
Patent Publication No. Hei. 6-244104, the crystallization of
silicon may be accelerated by adding such an element as nickel
(catalyst element) in crystallizing the silicon film by thermal
annealing.
[0095] In this embodiment, after a 50-nm-thick amorphous silicon
film is formed by plasma CVD, hydrogen is removed by performing a
heat treatment at 450.degree. C. for one hour and then the
amorphous silicon film is converted into a polycrystalline silicon
film by illuminating it with excimer laser light. The
polycrystalline silicon film is patterned into island-like active
layers (a p-channel TFT active layer 122 and an n-channel TFT
active layer 123) of peripheral driver circuit TFTs and an
island-like active layer 124 of a pixel TFT. Although for
convenience FIGS. 2A-2E show only three TFTs, actually millions of
TFTs are formed at the same time.
[0096] A gate insulating film 125 is then formed. In this
embodiment, a 120-nm-thick insulating film is formed by plasma CVD
by using, as a material gas, a mixed gas of dinitrogen monoxide
(N.sub.2O) and monosilane (SiH.sub.4).
[0097] Thereafter, a 300-nm-thick aluminum film is formed by
sputtering and then patterned into gate electrodes 126-128.
[0098] Then, as shown in FIG. 2B, all the island-like active layers
122-124 are doped with phosphorus ions in a self-aligned manner by
ion doping with the gate electrodes 126-128 used as a mask.
Phosphine (PH.sub.3) is used as a doping gas and the dose is set at
1.times.10.sup.12 to 5.times.10.sup.13 atoms/cm.sup.2. As a result,
weak n-type regions (n.sup.- regions) 129-131 are formed.
[0099] Then, as shown in FIG. 2C, a photoresist mask 132 is formed
so as to cover the entire p-channel TFT active layer 122 and a
photoresist mask 134 is formed so as to cover part of the pixel TFT
active layer 124. The mask 134 is formed so as to cover a portion
that ends at positions distant from the respective ends of the gate
electrode 128 by 3 .mu.m as measured parallel with the gate
electrode 128.
[0100] Then, phosphorus ions are again implanted by ion doping.
Phosphine is used as a doping gas and the dose is set at
1.times.10.sup.14 to 5.times.10.sup.15 atoms/cm.sup.2. As a result,
sources/drains 135 and 136 are formed as strong n-type regions
(n.sup.+ regions). In this doping step, no phosphorus ions are
implanted into regions 137, covered with the mask 134, of the weak
n-type regions (n.sup.- regions) 131 of the pixel TFT active layer
124. Therefore, the regions 137 remain of the weak n type. The
width x of the low-concentration impurity regions 137 is about 3
.mu.m.
[0101] Then, as shown in FIG. 5D, the n-channel TFT active layers
123 and 124 are covered with a photoresist mask 138. Thereafter,
boron is implanted into the island-like region 122 by ion doping by
using diborane (B.sub.2H.sub.6) as a doping gas. The dose is set at
5.times.10.sup.14 to 8.times.10.sup.15 atoms/cm.sup.2. Since the
boron dose in this doping is higher than the phosphorus dose in the
doping of the step of FIG. 2B, the weak n-type regions 130 are
inverted to strong p-type regions 139.
[0102] Subsequently, thermal annealing is performed at
450.degree.-850.degree. C. for 0.5-3 hours to activate the doping
impurities and restore the crystallinity of silicon. As a result of
this thermal annealing step, damage of the silicon film that has
been caused by the doping steps is repaired.
[0103] As a result of the above doping steps, an n-type TFT having
the strong n-type regions 135 as a source and a drain and a p-type
TFT having strong p-type regions 139 as a source and a drain are
formed in the driver circuit area 103 (104). Further, an n-type TFT
having the strong n-type regions 136 as a source and a drain and
the weak n-type low-concentration impurity regions 137 is formed in
the pixel area 102 (see FIG. 2D).
[0104] Then, a first interlayer insulating film 140 is formed as
shown in FIG. 2E. In this embodiment, a 500-nm-thick silicon
nitride film is formed by plasma CVD. The first interlayer
insulating film 140 may be another type of single layer film such
as a silicon oxide film or a silicon oxynitride film, or a
multilayered film of a silicon nitride film and a silicon oxide
film or of a silicon nitride film and a silicon oxynitride film.
Thereafter, contact holes are formed through the first interlayer
insulating film 140 by etching it.
[0105] Thereafter, a titanium/aluminum/titanium multilayered film
is formed by sputtering and then etched into driver circuit
electrodes/interconnections 141-143 and pixel TFT
electrodes/interconnect- ions 144 and 145. In this embodiment, the
thickness of each titanium film is set at 100 nm and the thickness
of the aluminum film is set at 300 nm.
[0106] Then, as shown in FIG. 3A, an organic resin film as a second
interlayer insulating film 146 is formed at a thickness of 1.0-2.0
.mu.m. The organic resin may be polyimide, polyamide,
polyimideamide, polyacrylic, or the like. In this embodiment, a
1.5-.mu.m-thick polyimide film is formed as the second interlayer
insulating film 146. Then, a contact hole reaching the pixel TFT
electrode 525 is formed by photolithography. Thereafter, as shown
in FIG. 3B, a pixel electrode 147 is formed by forming a
300-nm-thick aluminum film to which titanium is added at 1 wt % and
then patterning it.
[0107] In the pixel area 102 of the TFT substrate 100 shown in FIG.
18A, at least one TFT is provided for and electrically connected to
each pixel electrode. Examples of driver circuits formed in the
driver circuit areas 103 and 104 are a shift register and an
address decoder. Other circuits may also be formed when
necessary.
[0108] In this manner, driver circuit TFTs and pixel TFTs are
formed in an integral manner in the driver circuit areas 103 and
104 and the pixel area 102, respectively. In this embodiment, the
number of pixels is set at 1,024 (vertical).times.768 (horizontal).
In this specification, an area where pixel TFTs including the end
pixel TFTs exist is called the pixel area 102 and an area where
driver circuit TFTs including the end driver circuit TFTs exist is
called the driver circuit area 103 (104).
[0109] The TFT substrate 100 is cleaned sufficiently to remove
various chemicals such as etching liquids and resist removers that
were used for the surface processing in forming the TFTs.
[0110] Next, a process of forming gap retaining members will be
described. In the following description, the configurations of the
driver circuit areas 103 and 104 where driver circuit TFTs 160 are
formed and the pixel area 102 where pixel TFTs 150 are formed are
simplified as shown in FIGS. 4A-4D. In FIGS. 4A-4D, for
convenience, the scales of the respective parts are different.
[0111] First, as shown in FIG. 4B, a 2.2-.mu.m-thick photosensitive
polyimide film 301 is formed by spin coating. Thereafter, the
substrate is left at the room temperature for 30 minutes to
uniformize the thickness of the photosensitive polyimide film 301
over the entire TFT substrate 100 (leveling). Then, the TFT
substrate 100 on which the photosensitive polyimide film 301 is
formed is pre-baked at 120.degree. C. for 3 minutes.
[0112] Then, the photosensitive polyimide film 301 is patterned in
the following manner. As shown in FIG. 4C, after the photosensitive
polyimide film 301 is covered with a photomask 302, ultraviolet
light is applied to the TFT substrate 100 from above. Subsequently,
development is performed and then post-baking is performed at
280.degree. C. for one hour. Patterned gap retaining members 303
are thus formed as shown in FIG. 4D.
[0113] FIG. 5A is a top view of the TFT substrate according to this
embodiment, and FIG. 5B is an enlarged perspective view of a part
of the TFT substrate that is indicated by a broken line in FIG. 5A.
In FIGS. 5A and 5B, for convenience, the scales of the gap
retaining members 303, the pixel area 102, and the driver circuit
areas 103 and 104 are different from each other. In this
embodiment, as shown in FIGS. 5A and 5B, the gap retaining members
303 are shaped like a cylinder of 10 .mu.m in diameter and 2.2
.mu.m in height. The gap retaining members 303 are formed at
regular intervals of 30 .mu.m so as to surround the pixel area 102
at a distance of about 70 .mu.m from the end pixel TFTs. The
arrangement density of the gap retaining members 303 in the
vicinity of the liquid crystal injection inlet is set lower than in
the other portions. It is preferable that the arrangement density
of the gap retaining members 303 be uniform.
[0114] In the gap retaining members 303 of the invention, the
accuracy of their height is important. In this embodiment, the
height accuracy of the gap retaining members 303 is set at .+-.0.1
.mu.m. On the other hand, it is sufficient that the positional
accuracy of the gap retaining members 303 be about +10 .mu.m. In
this embodiment, part of the gap retaining members 303 are formed
between the pixel area 102 and the driver circuit areas 103 and
104. In this embodiment, the intervals between the pixel area 102
and the driver circuit areas 103 and 104 are about 400 nm, which is
sufficiently longer than the diameter of the gap retaining members
303. Therefore, the positional accuracy of the gap retaining
members 303 is not much important. The gap retaining members 303
are not formed inside the pixel area 102 and the driver circuit
areas 103 and 104.
[0115] Although in this embodiment the gap retaining members 303
are shaped like a cylinder, they may be shaped like an ellipse, a
streamlined shape, or a polygon such as a triangle or a rectangle.
The gap retaining members 303 may have any shape as long as they
can control the gap between the TFT substrate (first substrate) 100
and the opposed substrate (second substrate) 200. Although in this
embodiment all the gap retaining members 303 have the same shape
and are arranged at regular intervals, gap retaining members having
plural kinds of shapes may be arranged at different intervals.
Although in this embodiment the gap retaining members 303 are
formed at the constant distance from the pixel area 102, they may
be formed at different distances from pixel area 102. Further,
although in this embodiment the gap retaining members 303 are
formed so as to surround the pixel area 102, they may be formed
anywhere except the insides of the pixel area 102 and the driver
circuit areas 103 and 104 as long as they can control the cell
gap.
[0116] Then, alignment films are formed on the TFT substrate 100
and the opposed substrate 200. Specifically, the TFT substrate 100
and the opposed substrate 200 are coated with polyimide-type
vertical alignment films by one of spin coating, flexography, and
screen printing. In this embodiment, 1,000-.ANG.-thick alignment
films are formed by spin coating. Then, the alignment films are
cured by baking in which a hot wind of 180.degree. C. is fed.
[0117] Then, rubbing is performed in which the surface of the
opposed substrate 200, i.e., the surface of the alignment film, is
rubbed in one direction with a buff cloth (fiber of rayon, nylon,
or the like) having hair lengths of 2-3 mm. In this embodiment,
rubbing is not performed on the TFT substrate 100 side.
[0118] Thereafter, a sealing agent 205 is applied to the opposed
substrate 200 along its periphery (see FIG. 1B). Alternatively, the
sealing agent 205 may be applied to the TFT substrate 100 side. The
TFT substrate 100 and the opposed substrate 200 are then bonded
together (see FIG. 6).
[0119] Then, a liquid crystal material 300 as a display medium is
injected through a liquid crystal injection inlet 206, whereby the
liquid crystal material 300 is held between the TFT substrate 100
and the opposed substrate 200. In this embodiment, since the gap
retaining members 303 are shaped like a cylinder, the flow
resistance that occurs between the liquid crystal material 300 and
the surfaces of the gap retaining members 303 in injecting the
liquid crystal material 300 is small. Therefore, the liquid crystal
material 300 can be injected uniformly over the entire substrate
surfaces. It is preferable that the gap retaining members 303 be
shaped and arranged so as to reduce the flow resistance.
[0120] Then, after a sealing agent (not shown) is applied to the
liquid crystal injection inlet 206, the sealing agent is cured by
illuminating it with ultraviolet light. The liquid crystal material
300 is thus completely sealed in the cell.
[0121] When the display characteristics of cells actually
manufactured in the above manner were checked, no interference
fringe was observed on the cell surfaces. Further, superior display
performance with no disclination was obtained.
Embodiment 2
[0122] In this embodiment, the steps until pixel TFTs and driver
circuit TFTs are formed to constitute a TFT substrate are the same
as in the first embodiment and hence are not described here.
[0123] After the pixel TFTs and the driver circuit TFTs are formed
in an integral manner to constitute the TFT substrate, gap
retaining members are formed on the TFT substrate as shown in FIG.
3B. A process of forming gap retaining members according to this
embodiment will be described below with reference to FIGS. 7A-7D
and 8A-8C. The configuration of FIG. 7A is the same as that of FIG.
4A.
[0124] First, as shown in FIG. 7B, a 2.2-.mu.m-thick photosensitive
polyimide film 311 is formed by spin coating. Thereafter, the
substrate is left at the room temperature for 30 minutes to
uniformize the thickness of the photosensitive polyimide film 311
over the entire TFT substrate 100 (leveling). Then, the TFT
substrate 100 on which the photosensitive polyimide film 311 is
formed is pre-baked at 120.degree. C. for 3 minutes.
[0125] Then, the photosensitive polyimide film 311 is patterned in
the following manner. As shown in FIG. 7C, after the photosensitive
polyimide film 311 is covered with a photomask 312, ultraviolet
light is applied to the TFT substrate 100 from above. Subsequently,
development is performed, the photomask 312 is removed, and then
post-baking is performed at 280.degree. C. for one hour. As a
result, cylindrical gap retaining members 313 are formed (see FIG.
7D).
[0126] Thereafter, a resist film is applied uniformly and patterned
into a desired pattern. In this embodiment, a resist film (not
shown) is formed on the top faces of the cylindrical gap retaining
members 313. Subsequently, as shown in FIG. 8A, the shape of the
gap retaining members 313 is modified by applying oxygen plasma to
those. Since the top surfaces of the gap retaining members 313 are
protected by the resist film (not shown), only their side faces are
etched (ashed), whereby gap retaining members 314 having tapered
side faces are formed as shown in FIG. 8B. After completion of the
etching, the resist film is removed. FIG. 8C is an enlarged view of
a gap retaining member 314. Each gap retaining member 314 is shaped
like a truncated cone in which the bottom face diameter is 30
.mu.m, the top face diameter is 20 .mu.m, and the height is 2.2
.mu.m.
[0127] FIG. 9 is a top view of the TFT substrate 100 according to
this embodiment. The patterned cell gas retaining members 314 have
been formed by the above process. In this embodiment, as shown in
FIG. 9, the gap retaining members 314 are formed so as to doubly
surround the pixel area 102.
[0128] Thereafter, alignment films are formed on the TFT substrate
100 and the opposed substrate 200 in the same manner as in the
first embodiment.
[0129] Then, rubbing is performed on the surface of the opposed
substrate 200, i.e., the surface of the alignment film, and a
sealing agent 315 is applied to the TFT substrate 100 (see FIG. 9).
The TFT substrate 100 and the opposed substrate 200 are then bonded
together (not shown). In FIG. 9, the same reference numerals as in
FIGS. 1A and 1B denote the same members as in FIGS. 1A and 1B.
[0130] Then, a liquid crystal material as a display medium is
injected through a liquid crystal injection inlet. In this
embodiment, since the side faces of the gap retaining members 314
are tapered, the resistance that occurs between the liquid crystal
material and the gap retaining members 314 in injecting the liquid
crystal material is small. Therefore, the liquid crystal material
can be injected uniformly over the entire substrates. Then, the
liquid crystal material is completely sealed in the cell by sealing
the liquid crystal injection inlet with a sealing agent (not
shown).
[0131] The uniformity of the cell thickness can be improved by
increasing the number of gap retaining members 314, particularly by
increasing the number of gap retaining members 314 in the vicinity
of the pixel area 102. When the display characteristics of cells
actually manufactured in the above manner were checked, no
interference fringe was observed on the cell surfaces. Further,
superior display performance with no disclination was obtained.
Embodiment 3
[0132] This embodiment is different from the first embodiment only
in the number and arrangement of gap retaining members. Since this
embodiment is the same as the first or second embodiment in the
other points, a manufacturing process will not be described. In
FIG. 10, the same reference numerals as in FIGS. 1A and 1B and FIG.
9 denote the same members as in the latter figures. In this
embodiment, a sealing agent 403 is formed on the TFT substrate 100
side.
[0133] In this embodiment, as shown in FIG. 10, gap retaining
members 401 are formed on the TFT substrate 100 so as to surround
the pixel area 102 and gap retaining members 402 are formed on the
TFT substrate 100 so as to surround the driver circuit areas 103
and 104. The gap retaining members 401 and 402 are shaped like a
cylinder of 30 .mu.m in diameter and 2.2 .mu.m in height.
[0134] Then, rubbing is performed on the surface of the opposed
substrate 200, i.e., the surface of an alignment film, and a
sealing agent 403 is applied to the TFT substrate 100 (see FIG.
10). The TFT substrate 100 and the opposed substrate 200 are then
bonded together (not shown).
[0135] Then, a liquid crystal material as a display medium is
injected through a liquid crystal injection inlet 404, and the
liquid crystal material is completely sealed in the cell by sealing
the liquid crystal injection inlet 404 with a sealing agent (not
shown).
[0136] When the display characteristics of cells actually
manufactured in the above manner were checked, no interference
fringe was observed on the cell surfaces. Further, superior display
performance with no disclination was obtained.
Embodiment 4
[0137] In this embodiment, the steps until pixel TFTs and driver
circuit TFTs are formed to constitute a TFT substrate are the same
as in the first embodiment and hence are not described here.
[0138] A TFT substrate 100 is produced as shown in FIG. 3B
according the steps described in the first embodiment. A process of
forming gap retaining members according to this embodiment will be
described below with reference to FIGS. 11A-11C.
[0139] The configuration of FIG. 11A is the same as that of FIG.
3B. In this embodiment, gap retaining members 503 are formed by
printing on the TFT substrate 100 in which pixel TFTs 150 and
driver circuit TFTs 160 are formed. In this embodiment, the gap
retaining members 503 are made of a polyimide resin.
[0140] Specifically, as shown in FIG. 11B, gap retaining members
503 are formed by covering the TFT substrate 100 with a screen 501
and then printing a polyimide resin. In this embodiment, gap
retaining members 503 of 1.1 .mu.m in height are formed by a single
printing operation. Gap retaining members 503 having a desired
height are formed by repeating the steps of printing a polyimide
resin, baking it for a while, and again printing a polyimide resin
so that it is superimposed on the previous polyimide resin.
[0141] FIG. 12A is a top view showing the TFT substrate 100 on
which the gap retaining members 503 are formed. In FIG. 12A, the
same reference numerals as in FIGS. 1A and 1B and FIG. 9 denote the
same members as in the latter figures. In this embodiment, a
sealing member 511 is formed on the TFT substrate 100 side.
[0142] In this embodiment, the gap retaining members 503 are shaped
like an elliptical pole in which the major axis length is 30 .mu.m,
the minor axis length is 15 .mu.m, and the height is 2.2 .mu.m, and
are arranged so as to surround the pixel area 102. Further, in this
embodiment, the gap retaining members 503 are arranged so as to
reduce the resistance that occurs between the gap retaining members
503 and a liquid crystal material in injecting the liquid crystal
material. That is, the gap retaining members 503 are arranged so
that the major axes of the gap retaining members 503 are parallel
with the flowing direction of the liquid crystal material that is
injected through a liquid crystal injection inlet (see FIG.
12B).
[0143] Then, alignment films are formed on the surfaces of the TFT
substrate 100 and the opposed substrate 200. Specifically, the TFT
substrate 100 and the opposed substrate 200 are coated with
100-nm-thick, polyimide-type vertical alignment films (not shown)
by one of spin coating, flexography, and screen printing. Then, the
alignment films are cured by baking in which a hot wind of
180.degree. C. is fed.
[0144] Thereafter, a sealing agent 511 is applied to a peripheral
portion of the TFT substrate 100 so as to leave a liquid crystal
injection inlet 512, and the TFT substrate 100 and the opposed
substrate 200 are bonded together (not shown).
[0145] Then, a liquid crystal material is injected through the
liquid crystal injection inlet 512. In this embodiment, the gap
retaining members 503 are shaped like an elliptical pole and are
arranged so as to reduce the resistance that occurs between the gap
retaining members 503 and the liquid crystal material in injecting
the liquid crystal material. Therefore, the liquid crystal material
can be injected uniformly over the entire substrates.
[0146] Thereafter, a sealing agent (not shown) is applied to the
liquid crystal injection inlet 512 and then cured by illuminating
it with ultraviolet light. The liquid crystal material is thus
completely sealed in the cell.
Embodiment 5
[0147] This embodiment is directed to a method of forming gap
retaining members that is different from in the first
embodiment.
[0148] First, a TFT substrate 100 is produced according to the
steps described in the first embodiment. The TFT substrate 100 is
cleaned sufficiently to remove various chemicals such as etching
liquids and resist removers that were used for the surface
processing in forming the TFTs.
[0149] Next, a process of forming gap retaining members will be
described with reference to FIGS. 13A-13C and 14A-14B. In these
figures, for convenience, the scales of gap retaining members
formed and the TFTs are made different from each other.
[0150] FIG. 13A shows the TFT substrate 100 that has been produced
by the steps of the first embodiment. The configuration of FIG. 13A
corresponds to that of FIG. 3B. Some reference numerals are omitted
in FIG. 13A.
[0151] As shown in FIG. 13B, a 4.2-.mu.m-thick photosensitive
polyimide film 601 is formed by spin coating. Thereafter, the
substrate is left at the room temperature for 30 minutes to
uniformize the thickness of the photosensitive polyimide film 601
over the entire TFT substrate 100 (leveling). Then, the TFT
substrate 100 on which the photosensitive polyimide film 601 is
formed is pre-baked at 120.degree. C. for 3 minutes.
[0152] Then, the top surface of the photosensitive polyimide film
601 is planarized by polishing it by CMP (chemical mechanical
polishing). In this embodiment, slurry that is used in the CMP step
is a colloid-like one in which a silica (SiO.sub.2) fine powder is
dispersed in an acid solution. As for the CMP conditions, each of
the substrate and an abrasive cloth is rotated at 50 rpm and the
polishing time is set at 3 minutes. The top surface of the
photosensitive polyimide film 601 is planarized by the CMP step.
The thickness of the planarize photosensitive polyimide film 601
was 3.2 .mu.m. The CMP processing accuracy of the photosensitive
polyimide film 601 was 0.1 .mu.m.
[0153] Although in this embodiment the slurry that is used in the
CMP step is one in which a silica fine powder is dispersed in an
acid solution, slurry obtained by dispersing aluminum oxide
(Al.sub.2O.sub.3), cerium oxide (CeO), or the like in an acid
solution ray also be used. It is desirable that the slurry be
changed in accordance with the material that is subjected to CMP.
Further, although in this embodiment CMP is performed for 3 minutes
while each of the substrate and the abrasive cloth is rotated at 50
rpm, it is desirable that the optimum rotation speed and processing
time be set for a material to be subjected to CMP.
[0154] The cell gap (interval between the substrates) is determined
by the thickness of the photosensitive polyimide film 601 that has
been subjected to CMP. Therefore, the thickness of the as-formed
photosensitive polyimide film 601 may be set properly and the
thickness to be reduced by CMP may be adjusted in accordance with
the desired cell gap. In this manner, the desired cell gap can be
obtained with high accuracy.
[0155] Although in this embodiment CMP is used in the step of
polishing and planarizing the photosensitive polyimide film 601,
this step may be executed by any method as long as the top surface
of the photosensitive polyimide film 601 can be planarized with
high accuracy. For example, etch back may also be used.
[0156] Then, the photosensitive polyimide film 601 is patterned.
Specifically, as shown in FIG. 14A, after the photosensitive
polyimide film 601 is covered with a photomask 602, ultraviolet
light is applied to the TFT substrate 100 from above. Subsequently,
development is performed and then post-baking is performed at
280.degree. C. for one hour. As a result, patterned gap retaining
members 603 are formed as shown in FIG. 14B. In this specification,
the CMP-processed faces of the gap retaining members are called top
faces.
[0157] FIG. 15A is a top view of the TFT substrate 100 according to
this embodiment. FIG. 15B is an enlarged perspective view of a part
of FIG. 15A that is indicated by a two-dot chain line. In FIGS. 15A
and 15B, for convenience, the scales of the gap retaining members
603, the pixel area 102, and the driver circuit areas 103 and 104
are different from each other. The components in FIGS. 15A and 15B
that are given the same reference numerals as in FIGS. 1A and 1B
are the same as the corresponding components in FIGS. 1A and
1B.
[0158] In this embodiment, as shown in FIGS. 15A and 15B, the gap
retaining members 603 are shaped like a cylinder of 4 .mu.m in
diameter and 3.2 .mu.m in height. In this embodiment, the gap
retaining members 603 are arranged randomly. Their arrangement
density may be set at 40-160 mm.sup.-2. In this embodiment, it is
set at 50 mm.sup.-2.
[0159] Although in this embodiment the gap retaining members 603
are shaped like a cylinder, they may be shaped like an ellipse, a
streamlined shape, or a polygon such as a triangle or a rectangle.
The gap retaining members 603 may have any shape as long as they
can control the gap between the TFT substrate (first substrate) 100
and the opposed substrate (second substrate) 200. Although in this
embodiment all the gap retaining members 603 have the same shape,
gap retaining members having plural kinds of shapes may be formed.
Further, although in this embodiment the gap retaining members 603
are formed so that their arrangement density is uniform over the
entire surface of the TFT substrate 100, the gap retaining members
603 may be arranged at a higher density in a certain region.
[0160] Then, an opposed substrate 200 in which an opposed electrode
is formed is prepared (see FIG. 1B). In this embodiment, the
opposed electrode that is formed in a pixel-confronting area 202 is
made of ITO (indium tin oxide).
[0161] Then, alignment films (not shown) are formed on the TFT
substrate 100 and the opposed substrate 200. Specifically, the TFT
substrate 100 and the opposed substrate 200 are coated with
1,000-.ANG.-thick, polyimide-type vertical alignment films by spin
coating. Then, the alignment films are cured by baking in which a
hot wind of 180.degree. C. is fed.
[0162] Then, rubbing is performed in which the surface of the
opposed substrate 200, i.e., the surface of the alignment film, is
rubbed in one direction with a buff cloth (fiber of rayon, nylon,
or the like) having hair lengths of 2-3 mm. In this embodiment,
rubbing is not performed on the TFT substrate 100 side.
[0163] Thereafter, in this embodiment, a sealing agent 605 is
applied to the opposed substrate 200 along its periphery so as to
leave a liquid crystal injection inlet 606 (see FIG. 15A). The TFT
substrate 100 and the opposed substrate 200 are then bonded
together.
[0164] Then, a liquid crystal material as a display medium is
injected through the liquid crystal injection inlet 606, whereby
the liquid crystal material is held between the TFT substrate 100
and the opposed substrate 200. In this embodiment, since the gap
retaining members 606 are shaped like a cylinder, the flow
resistance that occurs between the liquid crystal material and the
surfaces of the gap retaining members 603 in injecting the liquid
crystal material is small. Therefore, the liquid crystal material
can be injected uniformly over the entire substrate surfaces. It is
preferable that the gap retaining members 603 be shaped and
arranged so as to reduce the flow resistance.
[0165] Then, after a sealing agent (not shown) is applied to the
liquid crystal injection inlet 606, the sealing agent is cured by
illuminating it with ultraviolet light. The liquid crystal material
is thus completely sealed in the cell.
[0166] When the display characteristics of cells actually
manufactured in the above manner were checked, no interference
fringe was observed on the cell surfaces. Further, superior display
performance with no disclination was obtained.
Embodiment 6
[0167] This embodiment is different from the fifth embodiment in
the area where gap retaining members are formed. This embodiment
will be described with reference to FIG. 16. The components in FIG.
16 that are given the same reference numerals as in FIGS. 15A and
15B are the same as the corresponding components in FIGS. 15A and
15B. Reference numeral 610 denotes gap retaining members; 101, a
substrate; 102, a pixel area; 103 and 104, driver circuit areas;
605, a sealing agent; and 606, a liquid crystal injection
inlet.
[0168] In this embodiment, as shown in FIG. 16, the gap retaining
members 610 are formed at regular intervals in the pixel area 102
and the driver circuit areas 103 and 104. It is preferable that in
the pixel area 102 the gap retaining members 610 be formed in
regions where signal lines and selection lines for the TFTs cross
each other. The interval between the gap retaining members 610 in
the pixel area 102 may be made different than in the driver circuit
areas 103 and 104.
Embodiment 7
[0169] This embodiment is different from the second and fifth
embodiments in the area where gap retaining members are formed.
This embodiment will be described with reference to FIG. 17. The
components in FIG. 17 that are given the same reference numerals as
in FIGS. 15A and 15B are the same as the corresponding components
in FIGS. 15A and 15B.
[0170] In this embodiment, as shown in FIG. 17, gap retaining
members 620 are formed in an area excluding the pixel area 102 and
the driver circuit areas 103 and 104.
[0171] In this embodiment, since the gap retaining members 620 do
not exist in the pixel area 102 nor the driver circuit areas 103
and 104, they do not decrease the effective aperture ratio as well
as unnecessary stress is not exerted on the TFTs in the pixel area
102 and the driver circuit areas 103 and 104 in bonding the TFT
substrate 100 and the opposed substrate 200 together. Therefore,
the TFTs are not damaged and hence the yield of products will
increase.
Embodiment 8
[0172] This embodiment is the same as the fifth, sixth, and seventh
embodiment in the configuration of the TFT substrate 100 side, and
is different from those embodiment in the configuration of the
opposed substrate 200 side.
[0173] In an electro-optical device according to this embodiment,
an organic resin film is formed after an opposed electrode is
formed to constitute the opposed substrate 100. The organic resin
film serves as a leveling film. In this embodiment, the organic
resin film is made of polyimide. Other examples of the material of
the organic resin film are acrylic, polyamide, and polyimideamide
and the like.
[0174] Then, CMP is performed on the organic resin film in the same
manner as in the fifth embodiment, whereby the organic resin film
is leveled.
[0175] Thereafter, alignment films are formed on the TFT substrate
100 and the opposed substrate 200 and then rubbing is performed on
the opposed substrate 200 side. The ensuing steps are the same as
in the fifth embodiment.
[0176] In this embodiment, not only do the top faces of the gap
retaining members provided on the TFT substrate 100 exist in the
same plane but also the flatness of the top surface of the organic
resin film provided on the opposed substrate 200 is secured.
Therefore, the uniformity of the cell gap can even be improved. The
opposed substrate 200 of this embodiment may be used in each of the
first to fourth embodiments.
Embodiment 9
[0177] Although the first to eighth embodiments are directed to the
case of using planar TFTs, naturally the invention is not limited
by the TFT structure. Therefore, each TFT in the pixel area 102 and
the driver circuit areas 103 and 104 may be an inverted staggered
structure TFT or a multi-gate TFT.
[0178] Although in the first to eighth embodiments the gap
retaining members are made of polyimide, other resins such as
acrylic, polyamide, and polyimideamide may also be used. Further,
the gap retaining members may be made of a thermosetting resin.
[0179] Although in the first to eighth embodiments the gap
retaining members are formed on the TFT substrate 100, they may be
formed on the opposed substrate 200 or both of them. Even in such
cases the gap retaining members may be formed according to the
method of the fifth embodiment.
[0180] Although in the first to eighth embodiments the gap
retaining members are made of polyimide, they may be made of other
insulative materials.
[0181] Although the first to eighth embodiments are directed to the
reflection-type electro-optical devices, transmission-type
electro-optical devices may be formed by making some modifications
such as using a transparent pixel electrode.
[0182] Although the first to eighth embodiments are directed to the
case where a liquid crystal material is used as a display medium,
the gap retaining members of the invention can also be with a mixed
layer of a liquid crystal material and a polymer, that is, they can
be used in a polymer dispersion type liquid crystal display device.
Further, the electro-optical devices of the invention may use any
other display media whose optical characteristic is modulated in
response to the application voltage, such as an electroluminescence
element.
[0183] Although in the first to eighth embodiments no particular
reference is made to color display, color filters may be provided
on the opposed substrate 200 side when color display is needed. The
color filters are required to be uniform in thickness, i.e., flat,
and superior in both heat resistance and resistance to
chemicals.
[0184] Although in the first to eighth embodiments rubbing is
performed on only the opposed substrate 200 side, rubbing may be
performed on the TFT substrate 100 side or both substrates.
[0185] Although the first to eighth embodiments are directed to the
active matrix electro-optical devices, it goes without saying that
the invention can be applied to passive electro-optical devices
that have no active elements such as TFTs.
Embodiment 10
[0186] This embodiment will be described with reference to FIGS. 18
to FIGS. 21A and 21B. This embodiment is directed to a case where
the invention is applied to an active matrix liquid crystal display
device and gap retaining members are formed on only the opposed
substrate 200. FIG. 18 is a schematic sectional view of a liquid
crystal display device. The components in FIG. 18 that are given
the same reference numerals as in FIGS. 1A and 1B are the same
components as in FIGS. 1A and 1B.
[0187] As shown in FIG. 18, a TFT substrate 100 and an opposed
substrate 200 are bonded together with a sealing agent 205 that is
provided on a peripheral portion of a substrate 201. The opposed
substrate 200 is provided with an opposed electrode 210 that
confronts a pixel area 102 and gap retaining members 220 for
retaining the gap between the TFT substrate 100 and the opposed
substrate 200.
[0188] A liquid crystal 300 is injected into the space between the
TFT substrate 100 and the opposed substrate 200 through a liquid
crystal injection inlet 206 and then sealed with a sealing agent
205. The TFT substrate 100 and the opposed substrate 200 are
provided with alignment films 110 and 230 for giving proper
alignment to the liquid crystal 300, respectively.
[0189] First, the TFT substrate 100 is produced according to the
manufacturing method of the TFT substrate 100 described in the
first embodiment (see FIGS. 2A-2E and 3A-3B). In the pixel area 102
of the TFT substrate 100 shown in FIG. 19, at least one TFT is
provided for and electrically connected to each pixel electrode.
Examples of driver circuits formed in the driver circuit areas 103
and 104 are a shift register and an address decoder. Other circuits
may also be formed when necessary.
[0190] After the configuration of FIG. 3B is obtained, the TFT
substrate 100 is cleaned sufficiently to remove various chemicals
such as etching liquids and resist removers that were used for the
surface processing in forming the TFTs. Then, an alignment film 110
is formed on the TFT substrate 100 as shown in FIG. 19 according to
a method described later.
[0191] Next, a manufacturing process of the opposed substrate 200
will be described with reference to FIGS. 20A-20E. As shown in FIG.
20A, a transparent glass or quartz substrate is used as a substrate
201. In this embodiment, a glass substrate is used. A transparent
conductive film is formed on the glass substrate 201 and then
patterned into an opposed electrode 210 in an area 202 to confront
the pixel area 102 (see FIG. 20A). In this embodiment, a
150-nm-thick ITO film is formed as the transparent conductive
film.
[0192] If necessary, color filters and a black matrix are formed by
a known method such as dyeing or printing before the formation of
the opposed electrode 210. The color filters are required to be
uniform in thickness, i.e., flat, and superior in both heat
resistance and resistance to chemicals.
[0193] Next, a process of forming the gap retaining members 220
will be described. In this embodiment, the gap retaining members
220 are formed by using polyimide which is one of photosensitive
resin materials.
[0194] First, as shown in FIG. 20B, a 3.2-.mu.m-thick
photosensitive polyimide film 211 is formed by spin coating.
Thereafter, the substrate is left at the room temperature for 30
minutes to uniformize the thickness of the photosensitive polyimide
film 211 over the entire opposed substrate 200 (leveling). Then,
the opposed substrate 200 on which the photosensitive polyimide
film 211 is formed is pre-baked at 120.degree. C. for 3
minutes.
[0195] Since the thickness of the photosensitive polyimide film 211
determines the cell gap (interval between the substrates), it may
be set properly in accordance with the desired cell gap. For
example, the thickness of the photosensitive polyimide film 211 may
be determined so that the cell gas becomes about 4-6 .mu.m for a
transmission-type liquid crystal display device, about 2-3 .mu.m
for a reflection-type liquid crystal display device, and less than
2 .mu.m for a ferroelectric liquid crystal display device. Since
the liquid crystal display device of this embodiment is of a
reflection type, the thickness of the photosensitive polyimide film
211 is set at 3.2 .mu.m.
[0196] Then, the photosensitive polyimide film 211 is patterned.
Specifically, after the photosensitive polyimide film 211 is
covered with a photomask 212 as shown in FIG. 20C, ultraviolet
light is applied from the mask 212 side. Subsequently, development
is performed and then post-baking is performed at 280.degree. C.
for one hour. Patterned gap retaining members 220 are thus formed
as shown in FIG. 20D.
[0197] FIGS. 21A and 21B are a top view and an enlarged perspective
view, respectively, of the opposed substrate 200 in the state of
FIG. 20D. As shown in FIGS. 21A and 21B, the gap retaining members
220 are shaped like a cylinder and replace the conventional
spherical spacers. Therefore, the cylinder diameter and height of
the gap retaining members 220 may be set at 1.5-2.5 .mu.m and
2.0-5.0 .mu.m, respectively. In this embodiment, the cylinder
diameter is set at 3.0 .mu.m and, to provide a cell gap of 3.0
.mu.m, the cylinder height is set at 3.2 .mu.m in the
pixel-confronting area 202. The height of the gap retaining members
220 in driver-circuit-confronting areas 203 and 204 is made greater
than in the pixel-confronting area 202 by the total thickness of
the opposed electrode 210, the color filters, etc.
[0198] In this embodiment, the gap retaining members 220 are
arranged randomly so as to function in the same manner as the
conventional spherical spacers. Therefore, the density of the gap
retaining members 220 may be set approximately equal to that of the
conventional spherical spacers, i.e., about 40-160 mm.sup.-2. In
this embodiment, the gap retaining members 220 are arranged
randomly at a density of 50 mm.sup.-2. Since the gap retaining
members 220 are arranged randomly over the entire opposed substrate
200, the positional accuracy of the gap retaining members 220 is
not very important, which means a large production margin.
[0199] Then, -alignment films 110 and 230 are formed on the TFT
substrate 100 and the opposed substrate 200, respectively (see
FIGS. 19 and 20E). The alignment films 110 and 230 are vertical
alignment type polyimide films. The thickness of the alignment
films 110 and 230 may be set at about 60-100 nm.
[0200] Specifically, after the TFT substrate 100 and the opposed
substrate 200 are cleaned, they are coated with respective
polyimide-type vertical alignment films by one of spin coating,
flexography, and screen printing. In this embodiment, polyimide
films are applied by spin coating. Then, the polyimide films are
cured by performing preliminary baking at 80.degree. C. for 5
minutes and then performing main baking by feeding a hot wind of
180.degree. C. The alignment films 110 and 230 are thus formed at a
thickness of 80 nm.
[0201] In FIG. 20E, the alignment film 230 is drawn so as not to
cover the side faces and the top faces of the gap retaining members
220. In this embodiment, since the polyimide film is formed by spin
coating, there may occur a case that the polyimide film covers the
side faces and the top faces of part of the gap retaining members
220. Since the polyimide film (thickness: tens to hundreds of
nanometers) is much thinner than the gap retaining members 220
(height: several micrometers) and it may not assume a complete film
on vertical surfaces such as the side faces of the gap retaining
members 220, in FIG. 20E the alignment film 230 is shown so as to
be formed on only the horizontal surface.
[0202] Although in this embodiment the alignment films 110 and 230
are made of polyimide, other resins such as acrylic, polyamide, and
polyimideamide may also be used. Further, they may be made of a
thermosetting resin.
[0203] Then, rubbing is performed in which each of the surface of
the alignment film 110 on the TFT substrate 100 and the surface of
the alignment film 230 on the opposed substrate 200 is rubbed in
one direction with a buff cloth (fiber of rayon, nylon, or the
like) having hair lengths of 2-3 mm. A TN mode alignment operation
is performed in which the rubbing directions for the TFT substrate
100 and the opposed substrate 200 are perpendicular to each
other.
[0204] In rubbing the TFT substrate 100, electrostatic breakdown of
the TFTs formed in the TFT substrate 100 is prevented by preventing
generation of static electricity by using an ion blow apparatus or
a humidifier.
[0205] On the other hand, in rubbing the opposed substrate 200, the
kind and the hair planting density of the buff cloth and the
rubbing conditions such as the roller rotation speed are selected
or set so as not to destroy the gal retaining members 220.
[0206] Then, an ultraviolet curable resin as a sealing agent 205 is
applied to a peripheral portion of the opposed substrate 200 so as
to leave a liquid crystal injection inlet 206 (see FIG. 21A).
Subsequently, the TFT substrate 100 and the opposed substrate 200
are opposed to each other and then pressed against each other so
that the cell gap in the pixel area 102 comes equal to the height
of the gap retaining members 220. The sealing agent 205 is cured in
this state. The sealing agent 205 may be applied to the TFT
substrate 100 side.
[0207] Then, a liquid crystal material 300 as a display medium is
injected through the liquid crystal injection inlet 206, whereby
the liquid crystal material is held between the TFT substrate 100
and the opposed substrate 200. After a sealing agent is applied to
the liquid crystal injection inlet 206, the sealing agent is cured
by illuminating it with ultraviolet light. The liquid crystal
material 300 is thus completely sealed in the cell.
[0208] The configuration of FIG. 18 is obtained by the above
steps.
[0209] Although in this embodiment the gap retaining members 220
are shaped like a cylinder, they may be shaped like an ellipse, a
streamlined shape, or a polygon such as a triangle or a rectangle.
The gap retaining members 220 may have any shape as long as they
can control the gap between the TFT substrate (first substrate) 100
and the opposed substrate (second substrate) 200.
[0210] Although this embodiment is directed to the reflection-type
liquid crystal display device in which the pixel electrodes are
made of a metal material, a transmission-type liquid crystal
display device may also be configured because the TN mode type
alignment operation is performed. In such a case, the pixel
electrodes may be transparent conductive films of ITO, SnO.sub.2,
or the like. Further, although this embodiment is of the TN mode
type, other modes may also be employed; the rubbing may be
performed in accordance with the mode.
[0211] Although this embodiment is directed to the case of using
planar TFTs, naturally the invention is not limited by the TFT
structure. Therefore, each TFT in the pixel area 102 and the driver
circuit areas 103 and 104 may be an inverted staggered structure
TFT or a multi-gate TFT. Further, this embodiment can be applied to
an IPS-type liquid crystal panel in which also the opposed
electrode is formed on the TFT substrate.
[0212] In this embodiment, since the gap retaining members 220 are
made of a photosensitive resin material, their height can be set as
desired, for instance, at less than 2 .mu.m. Therefore, the cell
gap of the liquid crystal display device can be made less than 2
.mu.m. Therefore, the gap retaining members 220 of this embodiment
are suitable for use in a liquid crystal panel of a ferroelectric
liquid crystal display device or that of a projection-type liquid
crystal display device.
[0213] Further, in this embodiment, since the gap retaining members
220 are fixed to the opposed substrate 200, they are not gathered
due to the flow of a liquid crystal, unlike the conventional
spacers. Therefore, point defects due to gathering of spacers can
be prevented.
Embodiment 11
[0214] Although in the tenth embodiment rubbing is performed on
both of the TFT substrate 100 side and the opposed substrate 200
side. In this embodiment, rubbing is performed on only the
alignment film 110 formed on the TFT substrate 100. The other part
of the manufacturing process of this embodiment is the same as in
the tenth embodiment.
[0215] Since a buff cloth that is used in the rubbing step is a
source of static electricity and dust, the yield of the liquid
crystal display device strongly depends on the rubbing step. In
this embodiment, to reduce the number of rubbing operations,
rubbing is performed on only the TFT substrate 100 side.
[0216] As for the opposed substrate 200, the height of the gap
retaining members 220 is several micrometers and the thickness of
the alignment film 230 is tens to hundreds of nanometers, and hence
the gap retaining members 220 project to the liquid crystal side.
Therefore, there is a possibility that the rubbing with the buff
cloth damages or peels the gap retaining members 220. In such a
case, the thickness of the gap retaining members 220 vary, making
it difficult to keep the cell gap uniform over the entire substrate
or among substrates. Further, damaged or peeled gap retaining
members 220 become a new source of dust.
[0217] Further, since the gap retaining members 220 project to the
liquid crystal side, it is difficult to form grooves in the
alignment film 230 in the intended manner, leaving a possibility
that the liquid crystal 300 will not be given proper alignment.
Since display cannot be performed if the liquid crystal 300 is not
oriented properly, properly orienting the liquid crystal 300 is an
important factor in increasing the production yield.
[0218] To avoid the above problems, in this embodiment, rubbing is
performed on only the alignment film 110 formed on the TFT
substrate 100.
[0219] In this embodiment, as in the tenth embodiment, the
alignment films 110 and 230 are vertical alignment type polyimide
films. Rubbing is performed in such a manner that the surface of
alignment film 110 formed on the TFT substrate 100 is rubbed in a
predetermined direction with a buff cloth (fiber of rayon, nylon,
or the like) having hair lengths of 2-3 mm. To prevent a reduction
in the production yield of the TFT substrate 100, it is important
that a proper measure be taken to prevent generation of static
electricity in the step of rubbing the TFT substrate 100.
Embodiment 12
[0220] While in the eleventh embodiment rubbing is performed on
only the TFT substrate 100 side, in this embodiment rubbing is
performed on only the alignment film 230 formed on the opposed
substrate 200. The other part of the manufacturing process of this
embodiment is the same as in the tenth embodiment (see FIG.
18).
[0221] Since a buff cloth that is used in the rubbing step is a
source of static electricity and dust, the yield of the liquid
crystal display device strongly depends on the rubbing step. In
this embodiment, to reduce the number of rubbing operations,
rubbing is performed on only the opposed substrate 200 side.
[0222] The buff cloth used in the rubbing step causes static
electricity and dust, which may destroy the TFTs that are formed in
the TFT substrate 100. More steps are needed to produce the TFT
substrate 100 than to produce the opposed substrate 200. Therefore,
frequent occurrence of defects in TFT substrates 100 increases the
manufacturing cost of the liquid crystal display device. This
embodiment is intended to increase the production yield of the TFT
substrate 100 by refraining from rubbing the TFT substrate 100
side.
[0223] In this embodiment, as in the tenth embodiment, the
alignment films 110 and 230 are vertical alignment type polyimide
films. Rubbing is performed in such a manner that the surface of
alignment film 230 formed on the opposed substrate 200 is rubbed in
a predetermined direction with a buff cloth (fiber of rayon, nylon,
or the like) having hair lengths of 2-3 mm. The rubbing conditions
are set so as not to damage or peel the gap retaining members 220
formed on the opposed substrate 200.
[0224] Although the eleventh and twelfth embodiments are the same
in that rubbing is performed on only one substrate side, they have
different effects. A party who practice the invention may select a
substrate to be subjected to rubbing in consideration of the
manufacturing cost, the yield, and other factors.
[0225] Where rubbing is performed on only one of the alignment
films as in the case of the eleventh and twelfth embodiments,
available liquid crystal driving modes are restricted. However, the
inventors have confirmed that the birefringence (ECB) mode is
available.
[0226] On the other hand, where rubbing is performed on both
alignment films as in the case of the tenth embodiment, there are
advantages that available liquid crystal driving modes are not
restricted and the liquid crystal can be oriented reliably though
rubbing operations need to be performed one time more than in the
eleventh and twelfth embodiments. Where the invention is applied to
a polymer dispersion type liquid crystal display device, no
alignment film rubbing operation is necessary.
Embodiment 13
[0227] This embodiment is directed to modification to the
arrangement of the gap retaining members and is the same as the
tenth embodiment in the other points. FIG. 22 is a top view of an
opposed substrate according to this embodiment. The members in FIG.
22 that are given the same reference numerals as in FIGS. 21A and
21B are the same as the corresponding members in FIGS. 21A and
21B.
[0228] In the tenth embodiment, the gap retaining members 220 are
arranged randomly on the entire opposed substrate 200 as shown in
FIG. 21A. In contrast, in this embodiment, as shown in FIG. 22, gap
retaining members 700 are arranged regularly in matrix form. The
shape of the gap retaining members 700 are the same as in the tenth
embodiment, that is, they are shaped like a cylinder of 2.0 .mu.m
in diameter and 3.2 .mu.m in height. Also as in the case of the
tenth embodiment, the gap retaining members 700 are arranged at a
density of 50 mm.sup.-2.
[0229] The gap retaining members 700 of this embodiment provides
the same advantages as the gap retaining members 220 of the tenth
embodiment.
Embodiment 14
[0230] This embodiment is directed to modification to the
arrangement of the gap retaining members and is the same as the
tenth embodiment in the other points. FIG. 23 is a top view of an
opposed substrate according to this embodiment. The members in FIG.
23 that are given the same reference numerals as in FIGS. 21A and
21B are the same as the corresponding members in FIGS. 21A and
21B.
[0231] In the tenth embodiment, the gap retaining members 220 are
arranged randomly on the entire opposed substrate 200 as shown in
FIGS. 21A. In contrast, in this embodiment, as shown in FIG. 23,
gap retaining members 710 are arranged randomly in the
pixel-confronting area 202 so as not to be formed in the
driver-circuit-confronting areas 203 and 204. The shape of the gap
retaining members 710 are the same as in the tenth embodiment, that
is, they are shaped like a cylinder of 2.0 .mu.m in diameter and
3.2 .mu.m in height. The gap retaining members 710 are arranged at
a density of 60 mm.sup.-2.
[0232] Since the TFTs in the driver circuit areas 103 and 104 have
a higher integration density than the TFTs in the pixel area 102,
they are prone to be broken by stress that is imposed by the
spacers. In this embodiment, since no gap retaining members 710 are
formed in the driver-circuit-confronting areas 203 and 204, when
the TFT substrate 100 and the opposed substrate 200 are bonded
together the gap retaining members 710 do not exert stress on the
driver circuits formed in the TFT substrate 100. Therefore, the
yield of the driver circuits can be increased.
[0233] In FIG. 23, there are gap retaining members 710 that
partially exist outside the pixel-confronting area 202. This
embodiment only requires that the gap retaining members 710 can
retain the gap in the pixel area 202, and that the gap retaining
members 710 not be formed in the driver-circuit-confronting areas
203 and 204.
[0234] In the tenth and thirteenth embodiments, the gap retaining
members 220 are formed in the pixel-confronting area 202 and
disclination is prone to occur around the gap retaining members
220. Therefore, where the gap retaining members 220 are formed in
the pixel-confronting area 202, to prevent display defects, it is
preferable that the gap retaining members 220 be formed in regions
that do not contribute to the display, for instance, regions where
a black matrix or bus lines of the TFT substrate 100 are
formed.
Embodiment 15
[0235] This embodiment is directed to modification to the
arrangement of the gap retaining members and is the same as the
tenth embodiment in the other points. FIGS. 24A and 24B are top
views of opposed substrates according to this embodiment. The
members in FIGS. 24A and 24B that are given the same reference
numerals as in FIGS. 21A and 21B are the same as the corresponding
members in FIGS. 21A and 21B.
[0236] While in the fourteenth embodiment the gap retaining members
710 are not formed in the driver-circuit-confronting areas 203 and
204, in this embodiment gap retaining members are not formed in the
driver-circuit-confronting areas 203 and 204 nor the
pixel-confronting area 202.
[0237] There are a height difference between the pixel-confronting
area 202 and the driver-circuit-confronting areas 203 and 204; in
general, the height is greater in the pixel-confronting area 202.
However, in the tenth embodiment, the height of the gap retaining
members 220 from the substrate 201 to their top faces is made
uniform over the entire opposed substrate 200. Therefore, as the
height difference between the pixel-confronting area 202 and the
driver-circuit-confronting areas 203 and 204 increases, it becomes
more difficult to compensate for the height difference and a cell
gap variation becomes more prone to occur in bonding the substrates
100 and 200 together.
[0238] In the tenth and thirteenth embodiments, since the gap
retaining members 220 or 700 are formed on the entire opposed
substrate 200, there is a possibility that gap retaining members
220 or 700 damage the TFTs that are formed in the pixel area 202
and the driver circuit areas 103 and 104.
[0239] This embodiment is directed to a method of forming gap
retaining members that solves the above problems, that is, prevents
a cell gap variation as well as prevents the TFTs that are formed
in the TFT substrate 100 from being damaged.
[0240] FIGS. 24A and 24B are top views of opposed substrates 200
according to this embodiment. The opposed substrates 200 are
produced in the same manner as in the tenth embodiment.
[0241] In this embodiment, as shown in FIG. 24A, cylindrical gap
retaining members 720 are arranged so as to surround the
pixel-confronting area 202. Specifically, the gap retaining members
720 are shaped like a cylinder of 10 .mu.m in diameter and 3.2
.mu.m in height. The gap retaining members 720 are located so as to
be separated by 70 .mu.m from the end of the pixel area 102 of the
TFT substrate 100 in the state that the substrates 100 and 200 are
bonded together. The interval between the gap retaining members 720
are set at 30 .mu.m. The arrangement density of the gap retaining
members 720 in the vicinity of a liquid crystal injection inlet 206
is made lower than in the other portions to facilitate the flow of
a liquid crystal.
[0242] The intervals between the pixel-confronting area 202 and the
driver-circuit-confronting areas 203 and 204 are hundreds of
micrometers, which is sufficiently longer than the diameter of the
gap retaining members 720. Therefore, the manufacturing margin of
the positions of the gap retaining members 720 is as large as about
.+-.10 .mu.m. On the other hand, the accuracy of the height of the
gap retaining members 720 is an important factor in determining the
cell gap, and is set at about .+-.0.1 .mu.m in this embodiment.
[0243] While in FIG. 24A the gap retaining members 720 are formed
only around the pixel-confronting area 202, gap retaining members
721 and 722 may additionally be formed around the
driver-circuit-confronting areas 203 and 204 as shown in FIG.
24B.
[0244] In this embodiment, the gap retaining members 720 are formed
in the regions that do not overlap with the pixel area 102 nor the
driver circuit areas 103 and 104 when the substrates 100 and 200
are bonded together. Therefore, the cell gap is determined by only
the height of the gap retaining members 720 (and 721 and 722).
Therefore, even if there is a height difference between the pixel
area 102 and the driver circuit areas 103 and 104, the cell gas can
be made uniform over the entire substrate or among different
substrates.
[0245] Further, since the gap retaining members 720 do not press
the pixel TFTs nor the driver circuit TFTs formed in the TFT
substrate 100, the yield can be increased.
[0246] Although in this embodiment the gap retaining members 720
(and 721 and 722) are formed around the pixel-confronting area 202
(and the driver-circuit-confronting areas 203 and 204), the
positions of the gap retaining members are not limited to those
shown in FIGS. 24A and 24B. The gap retaining members may be formed
anywhere except the pixel-confronting area 202 and the
driver-circuit-confronting areas 203 and 204 as long as they can
retain the cell gap.
Embodiment 16
[0247] This embodiment is a modification of the fifteenth
embodiment. FIGS. 25A and 25B are a top view and an enlarged
perspective view, respectively, of an opposed substrate according
to this embodiment. The manufacturing method of the opposed
substrate is the same as in the tenth embodiment, and members in
FIGS. 25A and 25B that are given the same reference numerals as in
FIGS. 21A and 21B are the same as the corresponding members in
FIGS. 21A and 21B.
[0248] In this embodiment, a gap retaining member 730 is
approximately shaped like a wall that erects from the substrate
201. The gap retaining member 730 surrounds a pixel-confronting
area 202 and is connected to the liquid crystal injection inlet
206. The gap retaining member 730 is 20 .mu.m in width and 3.2
.mu.m in height and is separated from the end of the
pixel-confronting area 202 by 50 .mu.m.
[0249] In this embodiment, the gap retaining member 730 is formed
in an area that does not overlap with any of the pixel area 102 and
the driver circuit areas 103 and 104 when the substrates 100 and
200 are bonded together. Since the cell gap is determined by only
the height of the gap retaining member 730, the cell gap can be
made uniform over the entire substrate or among different
substrates even if there is a height difference between the pixel
area 102 and the driver circuit areas 103 and 104.
[0250] Since the gap retaining member 730 does not press the TFTs
formed in the TFT substrate 100, the yield can be increased.
[0251] Further, as shown in FIG. 26, this embodiment has a feature
that the gap retaining member 730 has a structure that enables
sealing of a liquid crystal in the pixel area 102. Because of the
presence of the gap retaining member 730, a liquid crystal is
injected into only the space corresponding to the pixel area 102
and is not injected into the spaces corresponding to the driver
circuit areas 103 and 104. Therefore, the load capacitances of the
driver circuits can be reduced and hence crosstalk can be made less
prone to occur.
[0252] While in FIG. 25A the gap retaining member 730 is formed
only around the pixel-confronting area 202, as shown in FIG. 26
wall-shaped gap retaining members 731 and 732 similar to the gap
retaining member 730 may additionally be formed around the
driver-circuit-confronting areas 203 and 204.
[0253] In this embodiment, it is sufficient that the gap retaining
member 730 has a structure that enables sealing of a liquid crystal
in the pixel area 102, and hence the shape of the gap retaining
members 731 and 732 is not limited to the wall-like shape and may
be a cylindrical shape, an elliptical pole shape, a rectangular
prism shape, or a polygonal prism shape. The positions of the gap
retaining members 731 and 732 are not limited to the neighborhood
of the driver-circuit-confronting areas 203 and 204; they may be
formed anywhere except the pixel-confronting area 202 and the
peripheral-circuit-confronting areas 203 and 204 as long as they
can retain the cell gap.
Embodiment 17
[0254] This embodiment is a modification of the sixteenth
embodiment. This embodiment has a feature that gap retaining
members are configured so that a liquid crystal is injected into
the space corresponding to the pixel area 102 but is not injected
into the spaces corresponding to the driver circuit areas 103 and
104. FIG. 27 is a top view of an opposed substrate according to
this embodiment. The manufacturing method of the opposed substrate
is the same as in the tenth embodiment, and members in FIG. 27 that
are given the same reference numerals as in FIGS. 21A and 21B are
the same as the corresponding members in FIGS. 21A and 21B.
[0255] In this embodiment, as shown in FIG. 27, the
driver-circuit-confronting areas 203 and 204 are surrounded by a
wall-shaped gap retaining member 741 so that a liquid crystal 300
does not enter the driver circuit areas 103 and 104 in the state
that the substrates 100 and 200 are bonded together.
[0256] In this embodiment, as shown in FIG. 27, the gap retaining
member 714 is approximately shaped like a wall that erects from the
substrate 201. The gap retaining member 714 is 20 .mu.m in width
and 3.2 .mu.m in height and is separated from the end of the
driver-circuit-confronting areas 203 and 204 by 50 .mu.m.
[0257] In this embodiment, rectangular-prism-like gap retaining
member 740 are arranged so as to surround the pixel-confronting
area 202 so that a liquid crystal can flow into the pixel area 102.
Each gap retaining member 740 is shaped like a rectangular prism in
which the long side length is 30 .mu.m, the short side length is 15
.mu.m, and the height is 3.2 .mu.m. The gap retaining members 740
are separated from the end of the pixel-confronting area 202 by 70
.mu.m, and the interval between adjacent ones of the gap retaining
members 740 is set at 30 .mu.m. The arrangement density of part of
the gap retaining members 740 in the vicinity of the liquid crystal
injection inlet 206 is made lower than in the other portions to
facilitate injection of a liquid crystal.
[0258] Although the tenth to seventeenth embodiments are directed
to the case where a liquid crystal material is used as a display
medium, the invention can also be applied to a case of using a
mixed layer of a liquid crystal and a polymer, that is, the
invention can also be applied to a polymer dispersion type liquid
crystal display device.
Embodiment 18
[0259] This embodiment is directed to a case where the invention is
applied to an STN reflection type liquid crystal panel. FIG. 28 is
a schematic perspective view of a liquid crystal panel according to
this embodiment. As shown in FIG. 28, striped reflective electrodes
1110, an alignment film 1120, and gap retaining members 1300 are
provided on a glass substrate 1000. To retain the cell gap, the gap
retaining members 1300 are arranged uniformly over the entire
substrate 1000. On the other hand, transparent electrodes 1210 and
an alignment film 1220 are provided on a glass substrate 1200. The
glass substrates 1000 and 1200 are opposed to each other with the
alignment films 1120 and 1220 located inside. The interval between
the glass substrates 1000 and 1200 is secured by the gap retaining
members 1300, and an STN liquid crystal is sealed in the space
between the substrates 1000 and 1200.
[0260] A manufacturing method of the reflection-type liquid crystal
panel according to this embodiment will be described with reference
to FIGS. 29A-29F to 31. First, to form reflective electrodes 1110,
a metal film is formed on a glass substrate 1000. In this
embodiment, a 400-nm-thick aluminum film is formed by sputtering
and then patterned into striped reflective electrodes 1110 (see
FIG. 29A). The reflective electrodes 1110 extend in the direction
perpendicular to the paper surface of FIGS. 29A-29F.
[0261] Then, to form gap retaining members 1130, a coating 910 is
formed by using an insulative material. In this embodiment, a
3.5-.mu.m-thick photosensitive polyimide film 910 is formed by spin
coating and then left at the room temperature for 30 minutes
(leveling) to uniformize the thickness of the photosensitive
polyimide film 910 over the TFT substrate. Thereafter, the glass
substrate 1000 on which the photosensitive polyimide film 910 is
formed is pre-baked at 120.degree. C. for 3 minutes (see FIG.
29B).
[0262] Then, the top surface of the photosensitive polyimide film
910 is planarized by chemical mechanical polishing (CMP). In this
embodiment, slurry that is used in the CMP step is a colloid-like
one in which a silica (SiO.sub.2) fine powder is dispersed in an
acid solution. As for the CMP conditions, each of the substrate and
an abrasive cloth is rotated at 50 rpm and the polishing time is
set at 3 minutes. In this CMP step, the top 1-.mu.m layer of the
photosensitive polyimide film 910 is removed by polishing, whereby
a polished photosensitive polyimide film 920 has a height of 2.6
.mu.m as measured from the surfaces of the reflective electrodes
1110.
[0263] Although in this embodiment the slurry that is used in the
CMP step is one in which a silica fine powder is dispersed in an
acid solution, slurry obtained by dispersing aluminum oxide
(Al.sub.2O.sub.3), cerium oxide (CeO.sub.2), or the like in an acid
solution may also be used. It is desirable that the slurry be
changed in accordance with the material that is subjected to CMP.
Further, the optimum rotation speed of each of the substrate and an
abrasive cloth and processing time may be determined in accordance
with a material to be subjected to CMP and the polishing removal
thickness.
[0264] The cell gap (interval between the substrates) is determined
by the thickness of the photosensitive polyimide film 920 that has
been obtained by CMP. Therefore, the thickness of the
photosensitive polyimide film 910 before being subjected to CMP may
be set properly in accordance with the desired cell gap and the
polishing removal thickness.
[0265] Even if the thickness of the photosensitive polyimide film
910 before being subjected to CMP varies from one substrate to
another, the thickness of the photosensitive polyimide film 920 can
be made uniform among different substrates by adjusting the
polishing removal thickness.
[0266] Then, to pattern the photosensitive polyimide film 920 that
has been obtained by CMP, the photosensitive polyimide film 920 is
covered with a photomask 930 as shown in FIG. 29D. Although in FIG.
29D the photomask 930 is drawn as if it were divided, actually it
is an integral layer having circular openings.
[0267] Ultraviolet light is applied in the state of FIG. 29D.
Subsequently, development is performed and then post-baking is
performed at 280.degree. C. for one hour. In this manner, as shown
in FIG. 29E, portions of the photosensitive polyimide film 920 that
have been illuminated with ultraviolet light remain and cylindrical
gap retaining members 1300 are formed.
[0268] Then, a polyimide-type vertical alignment film 1120 is
formed on the substrate 1000 by one of spin coating, flexography,
and screen printing. In this embodiment, to reduce physical impact
on the gap retaining members 1300, the alignment film 1120 is
formed by spin coating. Thereafter, the polyimide film 1120 is
cured by baking it by feeding a hot wind of 180.degree. C. Settings
are made so that after the curing the alignment film has a
thickness of 100 nm (see FIG. 29F).
[0269] FIG. 32 is a top view of the substrate 100 in the state of
FIG. 29F. In this embodiment, the gap retaining members 1300 are
shaped like a cylinder with a circular cross-section in which the
bottom face diameter is 3 .mu.m and the height as measured from the
surface of the alignment film 1120 is about 2.5 .mu.m. The gap
retaining members 1300 are arranged regularly at a density of 50
mm.sup.-2. The arrangement density of the gap retaining members
1300 may be set at 40-160 mm.sup.-2, which is approximately equal
to the dispersion density of conventional spacers, in accordance
with the strength of the gap retaining members 1300.
[0270] In this embodiment, the gap retaining members 1300 are
formed at positions on the reflective electrodes 1110 where the top
faces 1300a of the respective gap retaining members 1300 confront
the transparent electrodes 1210 in the state that the glass
substrates 1000 and 1200 are opposed to each other.
[0271] The surface (to contact a liquid crystal material) of each
glass substrate 1000 or 1200 has periodic asperities due to the
multilayered structure including the striped electrodes 1110 or
1210. In the state that the glass substrates 1000 and 1200 are
opposed to each other, the cell gap varies periodically due to
those asperities. In view of this, in this embodiment, all the gap
retaining members 1300 are formed at positions having almost the
same cell gap value and the heights of the respective gap retaining
members 1300 are approximately equalized by CMP. In this manner,
the cell gap is made uniform over the entire substrate.
[0272] In FIG. 29F, the alignment film 1120 is drawn so as not to
cover the side faces and the top faces 1300a of the gap retaining
members 1300. This is because in this embodiment the alignment film
1120 may not assume a complete film on the side faces and the top
faces 1300a of the gap retaining members 1300 that are erected as
shown in FIG. 29F, because the polyimide film is formed by spin
coating and the polyimide film (thickness: tens to hundreds of
nanometers) is much thinner than the gap retaining members 1300
(height: several micrometers). Thus, FIG. 29F shows only the
alignment film 1120 that is formed on the horizontal surface and
assumes a complete film.
[0273] Next, a process to be executed on the glass substrate 1200
will be described with reference to FIGS. 30A and 30B. Color
filters 1230 are formed on the glass substrate 1200, and then a
protective film 1240 made of an acrylic resin or an epoxy resin is
formed on the color filters 1230. In this embodiment, a
1-.mu.m-thick acrylic resin is formed as the protective film 1240
(see FIG. 30A). In FIG. 28, the color filters 1230 and the
protective film 1240 are omitted.
[0274] Then, transparent conductive films of ITO (indium tin
oxide), SnO.sub.2 (tin oxide), or the like are formed as
transparent electrodes 1210. In this embodiment, an ITO film is
formed by sputtering and then patterned into striped transparent
electrodes 1210. Thereafter, a polyimide-type vertical alignment
film 1220 is formed by the same method as the alignment film 1120
is formed (see FIG. 30B).
[0275] Then, rubbing is performed on each of the alignment films
1120 and 1220. In this embodiment, each of the alignment films 1120
and 1220 is rubbed with a roller on which a buff cloth (fiber of
rayon or nylon) having hair lengths of 2-3 mm is wound. The rubbing
direction is set parallel with one of the diagonals of the glass
substrate 1000 or 1200. The directions of rubbing on the alignment
films 1120 and 1220 are set so as to be perpendicular to each other
in the state that the glass substrates 1000 and 1200 are opposed to
each other.
[0276] As for the glass substrate 1000, the gap retaining members
1300 project from the alignment film 1120. Therefore, there is a
possibility that the gap retaining members 1300 are damaged or
peeled. This problem can be avoided by properly adjusting the kind
and the hair planting density of a buff cloth, the rotation speed
of the roller, the number of rubbing operations, and other
factors.
[0277] Then, a sealing agent for bonding the glass substrates 1000
and 1200 together is applied to one of the glass substrates 1000
and 1200. In this embodiment, a sealing agent made of an
ultraviolet curable resin is applied to a peripheral portion of the
glass substrate 1200 so as to leave a liquid crystal injection
inlet. Thereafter, the glass substrates 1000 and 1200 are opposed
to each other and pressed against each other so that the cell gap
becomes equal to the height of the gap retaining members 1300. The
sealing agent is cured in this state by illuminating it with
ultraviolet light.
[0278] Then, a liquid crystal is injected through the liquid
crystal injection inlet. Subsequently, a sealing agent is applied
to the liquid crystal injection inlet and then cured by
illuminating it with ultraviolet light. The liquid crystal is thus
completely sealed in the cell. Then, a phase plate 1510, a
polarizer 1520, and a forward scattering plate 1530 are provided on
the back surface of the glass substrate 1200. As a result of the
execution of the above steps, a full-color STN liquid crystal panel
shown in FIG. 31 is completed.
[0279] FIG. 31 is a sectional view of the liquid crystal panel. In
FIG. 31, the striped reflective electrodes 1110 extend in the
direction parallel with the paper surface and the striped
transparent electrodes 1210 extend in the direction perpendicular
to the paper surface
[0280] In this embodiment, the reason why the gap retaining members
1300 are provided on the glass substrate 1000 side is that the
color filters 1230 are provided on the glass substrate 1200 side.
The gap retaining members 1300 are formed through chemical
mechanical polishing, which involves application of physical force.
In this embodiment, to minimize the rate of occurrence of defective
products, the gap retaining members 1300 are provided on the glass
substrate 1000 side where the color filters 1230 are not
provided.
[0281] This embodiment is directed to the full-color panel. On the
other hand, the color filters 1230 are not required in
black-and-white display panels, three-panel-type projection display
panels, etc. In such cases, the gap retaining members 1300 may be
provided on either the glass substrate 1000 or 1200. That is, the
substrate to be provided with the gap retaining members 1300 may be
selected so that the rate of occurrence of defective products is
reduced in the manufacturing process.
[0282] Although this embodiment is directed to the reflection-type
liquid crystal panel, the gap retaining members 1300 of this
embodiment can be used in transmission-type panels.
[0283] Although in this embodiment the gap retaining members 1300
are arranged regularly, they may be arranged randomly, for example,
as shown in FIG. 33. Even in such a case the gap retaining members
1300 are not gathered at a single location unlike the conventional
spacers, because their positions are determined by the photomask
930.
[0284] Although in this embodiment the bottom face of each gap
retaining member 1300 is a circle, it may be an ellipse or may have
a streamlined shape or a polygonal shape such as a triangle or a
rectangle. The gap retaining members 1300 may assume any shape as
long as they can control the cell gap and provide sufficient
strength. Although in this embodiment all the gap retaining members
1300 have the same shape, gap retaining members 1300 having plural
kinds of shapes may be formed on the same substrate. In this
embodiment, since the shape of the bottom face of each gap
retaining member 1300 is determined by the photomask 930, it can be
changed easily with high accuracy.
[0285] Although in this embodiment the arrangement density of the
gap retaining members 1300 is set uniform, it may be increased in a
particular region, for instance, to increase the strength there. In
this embodiment, since the arrangement density of each gap
retaining member is determined by the photomask 930, it can be
changed easily with high accuracy.
Embodiment 19
[0286] While the eighteenth embodiment is directed to the STN
liquid crystal panel, the invention can be applied to a liquid
crystal panel using a ferroelectric liquid crystal. In this
embodiment, in the reflection-type panel shown in FIG. 28, the gap
retaining members 1300 are formed so as to assume a cylinder in
which the height as measured from the reflective electrodes 1110 is
1.5 .mu.m and the bottom face is a circle of 2 .mu.m in diameter.
The manufacturing method, the positions of formation, and the
arrangement density of the gap retaining members 1300 are the same
as in the eighteenth embodiment.
[0287] The cell gap can be determined as desired by the gap
retaining members 1300 and their positions of formation can be
controlled. Further, the faces confronting the other substrate is
made flat. Therefore, by virtue of the use of the gap retaining
members 1300, the cell gap that is smaller than the spiral pitch of
a ferroelectric liquid crystal can be made uniform with high
accuracy over the entire substrate.
[0288] Ferroelectric liquid crystals have features that no
crosstalk occurs, the viewing angle is wide, and the switching
speed is three orders or more higher than that of STN liquid
crystals, and hence can realize high-resolution, large-screen
displays even with the passive matrix driving scheme. Therefore,
the use of the gap retaining members 1300 of this embodiment makes
it possible to provide, at a low cost, a high-resolution,
large-screen ferroelectric liquid crystal panel.
[0289] Further, an antiferroelectric liquid crystal can be used
instead of a ferroelectric liquid crystal. Also in the case of
using an antiferroelectric liquid crystal, the cell gap needs to be
made less than 2 .mu.m so that the spiral structure of the liquid
crystal disappear. By using the gap retaining members 1300 of this
embodiment, the cell gap can be made less than 1.5 .mu.m.
[0290] As described above, according to the invention, a
semiconductor display device having a uniform cell thickness
profile can be obtained. Further, according to the invention, since
a desired cell gap can be secured without scattering grainy
spacers, there can be prevented an event that unnecessary force is
exerted on the driver circuit TFTs in bonding the substrates
together, which leads to an increase in the yield of products.
[0291] According to another aspect of the invention, the accuracy
of the cell gap can be made high because the top faces of the gap
retaining members are planarized and the planarization is performed
by chemical mechanical polishing. This makes it possible to provide
an electro-optical device having a uniform cell thickness profile.
Further, according to this aspect of the invention, since a desired
cell gap can be secured without scattering grainy spacers, there
can be prevented an event that unnecessary force is exerted on the
driver circuit TFTs in bonding the substrates together, which leads
to an increase in the yield of products.
[0292] According to a further aspect of the invention, since the
gap retaining members are provided on the opposed substrate,
influences (etchant-related influences, mechanical impact, etc.) of
the formation of the gap retaining members do not affect the
elements formed in the TFT substrate, which leads to an increase in
yield.
[0293] Further, providing the gap retaining members on the opposed
substrate makes it easier to select a material of the gap retaining
members than providing those on the TFT substrates in which the
switching elements such as TFT is are provided. Further, by
providing the gap retaining members on the opposed substrate,
materials such as an etchant and means that are necessary to form
the gap retaining members can be selected from wider ranges.
* * * * *