U.S. patent application number 10/715455 was filed with the patent office on 2004-09-30 for semiconductor memory.
This patent application is currently assigned to RENESAS TECHNOLOGY CORP.. Invention is credited to Inoue, Kazunari.
Application Number | 20040190320 10/715455 |
Document ID | / |
Family ID | 32985122 |
Filed Date | 2004-09-30 |
United States Patent
Application |
20040190320 |
Kind Code |
A1 |
Inoue, Kazunari |
September 30, 2004 |
SEMICONDUCTOR MEMORY
Abstract
A semiconductor memory can reduce its power consumption by
decreasing the activation frequency of search lines during search
operation. It includes a CAM cell block for storing memory data
expressing each combination of digital values stored in four memory
cells in terms of a 2-bit digital value; search lines on which a
digital value to be matched with a digital value stored in the
memory cells is placed; a search data setting section for placing
individual 1-bit digital values on the search lines connected to
the memory cells to set the search data expressing a 4-bit
combination of digital values in terms of the 2-bit digital value;
transistors for deciding match/mismatch between the memory data and
search data; and the match line 3 for outputting the decision
result.
Inventors: |
Inoue, Kazunari; (Tokyo,
JP) |
Correspondence
Address: |
BURNS DOANE SWECKER & MATHIS L L P
POST OFFICE BOX 1404
ALEXANDRIA
VA
22313-1404
US
|
Assignee: |
RENESAS TECHNOLOGY CORP.
|
Family ID: |
32985122 |
Appl. No.: |
10/715455 |
Filed: |
November 19, 2003 |
Current U.S.
Class: |
365/49.17 |
Current CPC
Class: |
G11C 11/56 20130101;
G11C 15/00 20130101 |
Class at
Publication: |
365/049 |
International
Class: |
G11C 015/00 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 26, 2003 |
JP |
2003-85924 |
Claims
What is claimed is:
1. A semiconductor memory comprising: a memory cell block that
consists of L memory cells each for storing 1-bit digital value,
where L is an integer equal to mth power of 2, and stores memory
data expressing a combination of digital values stored in the
individual memory cells in terms of an M-bit digital value, where M
is a positive integer equal to or greater than two; search lines on
which 1-bit digital values are set to be matched with the digital
values stored in the memory cells; a search data setting section
for setting search data expressing the combination of the L-bit
digital values in terms of the M-bit digital value by setting the
1-bit digital values on the L search lines; a match section for
making a match/mismatch decision between the memory data and the
search data by matching the digital value stored in the memory
cells constituting the memory cell block with the digital value set
on the search lines connected to the memory cells; and an output
section for outputting a decision result of said match section.
2. The semiconductor memory according to claim 1, wherein said
memory cell block stores the memory data expressing the combination
of the digital values stored in the individual memory cells in
terms of 3.sup.M M-bit digital values consisting of ternary values
"0", "1" and "X (don't care)", and wherein said search data setting
section sets the search data expressing the combination of L-bit
digital values in terms of M-bit digital values by charging only
one of the L search lines connected to the memory cells
constituting said memory cell block.
3. The semiconductor memory according to claim 1, wherein said
memory cell block is composed of two CAM cells, each of which
stores data expressing a combination of digital values stored in a
pair of memory cells in terms of ternary values "0", "1" and "X
(don't care)", said memory cell block storing memory data
expressing one of 32 combinations of the data stored in said CAM
cells in terms of a 2-bit digital value; and said search data
setting section charges only one of the four search lines connected
to the memory cells constituting said memory cell block to set the
search data expressing one of the combinations of the 4-bit digital
values in terms of four 2-bit digital values.
4. The semiconductor memory according to claim 1, wherein each of
said memory cells is composed as a dynamic-type memory cell
comprising: a MOS transistor disposed at an intersection of a
lattice formed by word lines and bit lines intersecting with each
other; and a data storage capacitor for storing 1-bit digital
value.
5. The semiconductor memory according to claim 4, wherein said
output section includes a match line that is precharged every time
said match section carries out matching, and outputs a charge state
of the match line after the matching as a decision result of the
match/mismatch between the memory data and search data; said match
section includes first MOS transistors that have their gate
electrodes connected to nodes of the data storage capacitors, and
open and close paths to the match line in response to charge states
of the data storage capacitors, and that have gate insulating films
with a thickness enabling charges on the match line to be leaked to
the data storage capacitors via the gate electrodes, and second MOS
transistors that have their gate electrodes connected to the search
lines, and open and close paths to a ground in response to charge
states of the search lines, said first MOS transistors and second
MOS transistors connecting the match line to the ground when they
close the paths; and a charge processor for charging the match line
for a time longer than a time said search data setting section
takes to charge the search lines to compensate for charges in the
data storage capacitors by using charges on the match line flowing
through gate leakage of said first MOS transistors.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor memory
including CAM (Content Addressable Memory) cells.
[0003] 2. Description of Related Art
[0004] Recently, a semiconductor memory composed of T-CAM
(Ternary-Content Addressable Memory) cells has come to be used in a
search system of a network address path. A configuration of a T-CAM
cell is shown in FIG. 12 of a Relevant Reference 1, for example. It
includes two memory cells with a RAM structure for expressing
ternary data "0", "1" and "X (Don't care)". Each memory cell is
connected to a pair of search lines for searching for binary data
"0" and "1". In addition, each CAM cell is connected to a match
line for indicating a match result between the search data on the
search lines and the memory data in the memory cells.
[0005] Next, the outline of the search operation will be
described.
[0006] First, the match line is charged to a high level, and one of
the search data "0" and "1" is set on the search lines.
Subsequently, matching is carried out between the search data on
the search lines and the memory data in the memory cells (one of
the values "0", "1" and "X"). If the two data match, the match line
is maintained at the high level, and a decision is made as "match"
as the search result. In other words, a decision is made that the
search data is present at the address having that memory data. On
the contrary, if the two data do not match, the match line is
discharged to a low level, and a decision is made that the search
result is "mismatch". A series of the search operation is repeated
in search cycles synchronizing to an external clock.
[0007] Relevant Reference 1: Japanese patent application laid-open
No. 2002-237190.
[0008] The conventional semiconductor memory composed of the CAM
cells has a problem of consuming very large power in the search
operation because it activates all the search lines at every search
cycle.
[0009] The problem will be described in more detail by way of
example.
[0010] FIG. 9 is a timing chart illustrating a search operation of
a semiconductor memory composed of the conventional T-CAM cells. In
FIG. 9, "CLK" designates the external clock supplied from the
outside. The search operation is carried out in search cycles
synchronized to the external clock. In FIG. 9, "RETRIEVAL SEARCH
DATA" designates the search data that is being searched for. In
addition, "AMP", "OUTPUT LINE" and "PRECHARGE" designate the
operation of an amplifier for amplifying the output from the match
line constituting a search result, the output value of the
amplifier, and the state of the match line precharged to the high
level before the search operation, respectively.
[0011] As illustrated in FIG. 9, the search lines repeat an
inversion to either all "0" or all "1" at every search cycle in
response to the search data supplied from the outside in the search
operation. When the data values of all the search lines are
inverted at every search cycle, the power consumption for executing
a search instruction becomes very large. For example, a 9 M-bit
class T-CAM consumes power of about 10 watts for a 100 MHz search
cycle.
SUMMARY OF THE INVENTION
[0012] The present invention is implemented to solve the foregoing
problem. It is therefore an object of the present invention to
provide a semiconductor memory capable of reducing the power
consumption by decreasing the activation frequency of the search
lines in the search operation.
[0013] According to a first aspect of the present invention, there
is provided a semiconductor memory comprising: a memory cell block
that consists of L memory cells each for storing 1-bit digital
value, where L is an integer equal to mth power of 2, and stores
memory data expressing a combination of digital values stored in
the individual memory cells in terms of an M-bit digital value,
where M is a positive integer equal to or greater than two; search
lines on which 1-bit digital values are set to be matched with the
digital values stored in the memory cells; a search data setting
section for setting search data expressing the combination of the
L-bit digital values in terms of the M-bit digital value by setting
the 1-bit digital values on the L search lines; a match section for
making a match/mismatch decision between the memory data and the
search data by matching the digital value stored in the memory
cells constituting the memory cell block with the digital value set
on the search lines connected to the memory cells; and an output
section for outputting a decision result of the match section.
Thus, it can reduce the activation frequency of the search lines
during the search operation, thereby offering an advantage of being
able to reduce the power consumption in the search operation.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 is a block diagram showing a configuration of an
embodiment 1 of the semiconductor memory in accordance with the
present invention;
[0015] FIG. 2 is a circuit diagram showing a configuration of a CAM
cell block in FIG. 1;
[0016] FIG. 3 is a table showing search results for combinations of
memory data in the CAM cell block and search data;
[0017] FIG. 4 is a timing chart illustrating the search operation
of the embodiment 1 of the semiconductor memory;
[0018] FIG. 5 is a circuit diagram showing another configuration of
the CAM cell block;
[0019] FIG. 6 is a circuit diagram showing a configuration of a CAM
cell block of an embodiment 2 of the semiconductor memory in
accordance with the present invention;
[0020] FIGS. 7A and 7B are diagrams illustrating the behavior of
the memory cells constituting the CAM cell block of FIG. 6;
[0021] FIG. 8 is a timing chart illustrating the behavior of the
memory cells after precharging a match line; and
[0022] FIG. 9 is a timing chart illustrating the search operation
of a conventional semiconductor memory composed of T-CAM cells.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0023] The invention will now be described with reference to the
accompanying drawings.
Embodiment 1
[0024] FIG. 1 is a block diagram showing a configuration of an
embodiment 1 of the semiconductor memory in accordance with the
present invention. The present embodiment 1 of the semiconductor
memory has a memory cell array including subsets, each of which
consists of four memory cells 1a-1d for storing 1-bit digital
value. The memory cell array is structured by placing memory cells
at intersections of a lattice consisting of word lines 2 and bit
lines intersecting to each other. The word lines 2, which are
connected to the memory cells, are charged to select the memory
cells to undergo data write or data read. The bit lines 4a-4d
transfer the digital data to be written to or read from the memory
cells.
[0025] The semiconductor memory further comprises components
necessary to operate as the CAM such as match lines (output
section) 3 and search lines 5a-5d. Each match line 3 changes its
charge state depending on the match/mismatch between the digital
value stored in the memory cells 4a-4d and the digital value set on
the search lines 5a-5d. The search lines 5a-5d are connected to the
memory cells 1a-1d to set the digital value as the search data. The
present embodiment 1 of the semiconductor memory further includes
transistors (charge processor) 6 for charging match lines 3 with
charges fed from a power supply not shown; a search data setting
section 7 for placing search data on the search lines; amplifiers 8
for amplifying the outputs of the match lines 3; and output
terminals 9 of the amplifiers.
[0026] In FIG. 1, <1:0>, <3:2>, . . . , <n+1:n>
designate 0th bit, first bit, second bit, third bit, . . . , nth
bit, and (n+1)th bit of a bit string constituting the search data.
The value of each bit corresponds to a value set in a CAM cell
consisting of a pair of memory cells. In FIG. 1, a row direction of
the memory cell array (direction along the word lines 2) denotes a
data string (bit string of memory data) to be compared, and a
column direction (direction along the bit lines 4a-4d) denotes
addresses for storing individual data strings.
[0027] For example, 0th address, the first row of the memory cells
of the memory cell array, stores the digital values of the memory
data "00110101xx" in its memory cells, and the first address, the
second row of the memory cells of the memory cell array, stores the
digital values of the memory data "0101001xxxx" in its memory
cells.
[0028] In the memory cell array, the memory cells 1a and 1b, and
memory cells 1c and 1d each have a function of a CAM cell for
expressing ternary values "0", "1" and "X (don't care)", and the
four memory cells 4a-4d together constitute one CAM cell block
(memory cell block). Such CAM cell blocks are placed in a lattice
formed by the word lines and bit lines to form the memory cell
array. In addition, the search line is provided for each memory
cell column of the memory cell array, and the match line 3 is
provided for each memory cell row of the memory cell array.
[0029] FIG. 2 is a circuit diagram showing a configuration of one
of the CAM cell blocks in FIG. 1, which correspond to
<n+1:n>of the search data. As shown in FIG. 2, the memory
section of each of the memory cells 1a-1d is composed of a pair of
inverters whose output terminals are connected to input terminals
of the other. The memory cells 1a-1d are placed in correspondence
with the lattice points consisting of the word line 2 and bit lines
4a-4d. Transistors 12a-12d are disposed between the memory sections
of the memory cells 1a-1d and the word line 2 and bit lines 4a-4d.
The transistors 12a-12d have their gate electrodes connected to the
word line 2 in common for all the memory cells 1a-1d, and their
source electrodes connected to the bit lines 4a-4d,
respectively.
[0030] To write data to or read data from the memory cells 1a-1d,
the word line 2 is activated so that the bit lines 4a-4d are
connected to the memory sections via the transistors 12a-12d. Then,
the data is written to or read from the memory sections via the bit
lines 4a-4d. To operate as the CAM cell, the search lines 5a-5d are
provided for the memory cells 1a-1d, and the match line 3 is
provided in common to the memory cells 1a-1d along the word line 2.
The match line 3 is connected to the drain electrodes of the
transistors 10a-10d of the memory cells 1a-1d.
[0031] The transistors 10a-10d have their gate electrodes connected
to the memory sections of the memory cells 1a-1d, and their source
electrodes connected to the source electrodes of the transistors
11a-11d, respectively. The transistors 11a-11d have their drain
electrodes grounded and their gate electrodes connected to the
search lines 5a-5d, respectively. The transistors 10a-10d and
transistors 11a-11d operate as a match section for matching the
data stored in the memory sections of the memory cells 1a-1d and
the data set on the search lines 5a-5d. In FIG. 2, the same
components as those of FIG. 1 are designated by the same reference
numerals, and the description thereof is omitted here.
[0032] Next, the operation of the present embodiment 1 will be
described.
[0033] The present embodiment 1 of the semiconductor memory carries
out content search processing which outputs search results in
response to combinations of the memory data in the CAM cell blocks
and the search data as shown in FIG. 3, for example. FIG. 3 shows
relationships between the memory data stored in the CAM cell block
corresponding to <n+1:n> of FIG. 2 and the search data set on
the search lines 5a-5d. Here, the content search processing will be
described within the range as shown in FIG. 3. In the matrix
consisting of the memory data stored in the CAM cell block and the
search data in FIG. 3, blanks indicates that the search results are
"match", and the combinations denoted by "discharge" indicate that
the search results are "mismatch".
[0034] First, preprocessing of the content search processing is
carried out. The memory cells 1a-1d are preset by 4-bit data
expressing one of the memory data "xx", "x0", "x1", "0x", "00",
"01", "1x", "10", and "11" in the memory data column of the CAM
cell block in FIG. 3. The setting operation is the same as the
normal data write to the memory cells 1a-1d. More specifically, the
word line 2 is activated to bring the memory sections of the memory
cells 1a-1d and the bit lines 4a-4d into conduction via the
transistors 12a-12d. Then, the 4-bit digital data corresponding to
the memory data placed on the bit lines 4a-4d are stored in the
memory sections of the memory cells 1a-1d.
[0035] Subsequently, the charge processor, which consists of the
transistors 6 in the example of FIG. 2, precharges the match lines
3 with the charges from the power supply in synchronism with search
cycles. The gate electrodes of the transistors 6 are activated in
synchronism with the search cycles. Thus, the transistors 6,
switching the paths between the power supply and the match lines 3,
carries out the precharge to the match lines 3.
[0036] Once the match lines 3 have been precharged, the search data
setting section 7 places on the search lines 5a-5d the 4-bit data
expressing one of the 2-bit search data "00", "01", "10", and "11"
in the search data row of FIG. 3. In this case, only one of the
search lines 5a-5d is activated for one of the search data "00",
"01", "10" and "11". In other words, only one of the search lines
5a-5d is activated to be set at the digital value "1" in each cycle
of the content search processing.
[0037] For example, the 2-bit search data "00" is expressed by the
4-bit digital value "1000" consisting of digital values "1", "0",
"0" and "0" set in the search lines 5a, 5b, 5c and 5d. Likewise,
the 2-bit search data "01", "10" and "11" are expressed by the
4-bit data "0100", "0010" and "0001" placed on the search lines
5a-5d, respectively.
[0038] When the search data setting section 7 places the search
data on the search lines 5a-5d, the match section, which includes
the transistors 10a-10d and 11a-11d in the memory cells 1a-1d of
the CAM cell block of FIG. 2, compares the digital value stored in
the memory cells 1a-1d with the digital value placed on the search
lines 5a-5d, and makes a decision as to the match/mismatch between
them.
[0039] The transistors 11a-11d are opened or closed in response to
the charge states of the search lines Sa-5d on which the search
data setting section 7 sets the search data. Specifically, when the
digital value "1" is placed on one of the search lines 5a-5d, the
corresponding one of the transistors 11a-11d is closed so that the
corresponding one of the transistors 10a-10d has its source
electrode grounded. In this case, when the corresponding one of the
memory sections of the memory cells 1a-1d stores the digital value
"1", the corresponding one of the transistors 10a-10d is closed and
the match line 3 is grounded.
[0040] In contrast with this, when the digital value "0" is placed
on the search lines 5a-5d, or the memory sections of the memory
cells 1a-Id store the digital value "0", the transistors 10a-10d or
transistors 11a-11d are opened, and the match line 3 is not
grounded.
[0041] For example, when the memory cells 1a-1d store the memory
data "x0", the memory cells 1a-1d store the digital values "0",
"0", "0" and "1" as shown in FIG. 3. When the search data setting
section 7 places the search data "01" (or "11") on the search lines
5a-5d in this case, digital values "0", "1", "0" and "0" (or "0",
"0", "0" and "1") are set on the search lines 5a-5d.
[0042] In this case, since the memory section of the memory cell 1b
(or memory cell 1d) stores the digital value "1", the transistor
10b (or transistor 10d) is closed. In addition, since the digital
value "1" is placed on the search line 5b (or search line 5d), the
transistor 11b (or transistor 11d) is also closed. Thus, the
charges precharged on the match line 3 are discharged through the
transistors 10b and 11b (or transistors 10d and 11d).
[0043] Incidentally, when the memory cells 1a-1d store the memory
data "xx", it must produce "match" for any search data. In other
words, the memory data of the memory cells 1a-1d are set such that
the match line 3 must not be discharged even if any of the search
lines 5a-5d are activated. More specifically, as shown in FIG. 3,
the digital value "0" is set to all the memory cells 1a-1d so that
the transistors 10a-10d, which undergo the switching control by the
digital value stored in the memory sections, are all opened.
[0044] The foregoing matching causes the potential of the match
line 3 to be amplified by the amplifier 8 and output via the output
terminal 9. When the output value from the output terminal 9 is
digital value "1", that is, high level, it indicates that the
memory data stored in the CAM cell block "matches" to the search
data. In contrast, when the output value from the output terminal 9
is digital value "0", that is, low level, it indicates that the
memory data stored in the CAM cell block "mismatches" with the
search data.
[0045] FIG. 4 is a timing chart illustrating the content search
operation of the embodiment 1 of the semiconductor memory. In FIG.
4, the symbol "CLK" designates a clock signal fed from the outside.
The content search operation is carried out in the search cycles
synchronized to the external clock. The "retrieval search data" in
FIG. 4 indicates the search data that is being searched for. As
illustrated in FIG. 4, the present embodiment 1 of the
semiconductor memory activates only one of the search lines 5a-5d
in each search cycle. Thus, it can reduce the number of search
lines to be activated in each search cycle to 1/4 as compared with
the conventional semiconductor memory as shown in FIG. 9.
[0046] As for the conventional semiconductor memory which carries
out the matching between the memory data and the search data by
assigning one memory data to each CAM cell, the search line
connected to each CAM cell (one of the search lines connected to
the pair of the memory cells) must be activated in each search
cycle without exception.
[0047] In contrast with this, the semiconductor memory in
accordance with the present invention is configured as follows.
First, two CAM cells, each of which consists of two memory cells,
constitute one CAM cell block. Second, each combination of the four
digital values stored in the memory cells in the CAM block is
expressed in terms of 2-bit memory data (encoded to 2-bit memory
data). Third, a combination of the four digital values placed on
the search lines connected to the individual memory cells
constituting the CAM cell block is also expressed in terms of 2-bit
search data (encoded to 2-bit search data).
[0048] The configuration makes it possible to set the search data
without activating all the search lines connected to the individual
memory cells constituting the CAM cell block. Thus, it can reduce
the power consumption of the content search processing. In
addition, expressing the 2-bit search data by the 4-bit data
"1000", "0100", "0010" and "0001" including only one digital value
"1" can reduce the number of search lines, which are activated
during each search cycle for each CAM cell block, to one. In this
case, considering the fact that about 40% of the power consumption
in the search operation is ascribable to "charging and discharging
of the search lines", and that the number of search lines subjected
to the charge and discharge is halved, the total power consumption
is expected to be reduced by about 20%.
[0049] As described above, the present embodiment 1 includes: a CAM
cell block that includes memory cells 1a-1d for storing four 1-bit
digital values and stores memory data expressing a combination of
the four digital values in the form of a 2-bit digital value;
search lines 5a-5d that are connected to the memory cells 1a-1d
constituting the CAM cell block and each hold a 1-bit digital value
to be matched with the digital values stored in the memory cells
1a-1d; a search data setting section 7 that places 1-bit digital
values on the four search lines connected to the memory cells 1a-1d
constituting the CAM cell block to place the search data expressing
the combination of the 4-bit digital values in terms of the 2-bit
digital value; a match section composed of the transistors 10a-10d
and 11a-11d that match the digital value stored in the memory cells
1a-1d constituting the CAM cell block with the digital value placed
on the search lines 5a-5d connected to the memory cells 1a-1d to
make a decision as to the match/mismatch between the memory data
and search data; and a match line 3 for outputting the decision
result. Thus, the present embodiment 1 can reduce the activation
frequency of the search lines in the search operation, thereby
enabling the power consumption in the search operation.
[0050] In addition, the present embodiment 1 is configured as
follows. First, the CAM cell block includes two CAM cells each for
storing one of the ternary values "0", "1" and "X (don't care)",
and stores the memory data expressing the nine (square of 3)
combinations of the data in the CAM cells in terms of the 2-bit
digital values. Second, the search data setting section 7 charges
one of the four search lines connected to the memory cells
constituting the CAM cell block to set the search data expressing
the combinations of the 4-bit digital values in the form of the
four 2-bit digital values. As a result, it can reduce the number of
the search lines to be activated in one search cycle for each CAM
cell block to one, thereby being able to reduce the power
consumption in the search operation.
[0051] Incidentally, the CAM cell block can be configured as shown
in FIG. 5. The example of FIG. 5 employs dynamic-type cells as the
memory cells. The memory sections of the memory cells 1e-1h each
utilize a data storage capacitor. As for the memory cells 1e-1h,
their transistors 12e-12h have their gate electrodes connected to
the word line 2, and their source electrodes connected to the bit
lines 4a-4d. Transistors 10e-10h have their gate electrodes
connected to the nodes of the data storage capacitors of the memory
cells 1e-1h, their source electrodes connected to the source
electrodes of the transistors 11e-11h, and their drain electrodes
grounded.
[0052] The transistors 11e-11h have their gate electrodes connected
to the search lines 5a-5d, and their drain electrodes connected to
the match line 3. The transistors 10e-10h and 11e-11h operate as
the match section for matching the data stored in the data storage
capacitors of the memory cells 1e-1h with the data set on the
search lines 5a-5d. In FIG. 5, the same components as those of FIG.
1 are designated by the same reference numerals, and the
description thereof is omitted here.
[0053] The configuration of FIG. 5 enables the operation similar to
that of the foregoing embodiment 1, thereby offering similar
advantages. In addition, as compared with the configuration of the
foregoing embodiment 1, the configuration of FIG. 5 can reduce the
number of transistors, thereby being able to reduce the area
occupied by the semiconductor memory on a silicon substrate in
fabricating it.
[0054] Although the foregoing embodiment 1 describes an example in
which the bit lines, search lines, word lines and match lines are
provided separately, this is not essential. For example, such
configurations are possible in which the bit lines function as the
search lines, or the word lines function as the match lines.
[0055] Although the foregoing embodiment 1 describes an example in
which the CAM cell block are composed of the two CAM cells, each
consisting of a pair of memory cells, this is not essential. For
example, the CAM cell block can be composed of L memory cells,
where L is an integer equal to mth power of 2 and is greater than
four, and can store memory data expressing combinations of digital
values stored in the individual memory cells in terms of M-bit
digital values, where M is an integer equal to or greater than
two.
[0056] Furthermore, advantages similar to those of the foregoing
embodiment 1 are obtained by the following configuration. The CAM
cell block with the above-mentioned configuration stores one of the
.sub.3.sup.M M-bit memory data, which expresses a combination of
the digital values in the individual memory cells in terms of the
ternary values "0", "1" and "X (don't care)". Then, the search data
setting section 7 charges only one of the L search lines connected
to the memory cells constituting the CAM cell block to set the
search data expressing a combination of the L-bit digital values in
terms of an M-bit digital value.
Embodiment 2
[0057] FIG. 6 is a circuit diagram showing a configuration of a CAM
cell block of an embodiment 2 of the semiconductor memory in
accordance with the present invention. The present embodiment 2
uses the dynamic-type cells as the memory cells just as the memory
cell block shown in FIG. 5. It uses data storage capacitors as the
memory sections of the memory cells 1e-1h. The transistors 12e-12h
of the memory cells 1e-1h have their gate electrodes connected to
the word line 2, and their source electrodes connected to the bit
lines 4a-4d, respectively.
[0058] The transistors 10e-1-10h-1 (first MOS transistors) have
their gate electrodes connected to the nodes of the data storage
capacitors, their source electrodes connected to the source
electrodes of transistors 11e-1-11h-1, and their drain electrodes
connected to the match line 3. The transistors 10e-1-10h-1 each
have a gate insulating film (oxide film) thinner than that of the
transistors 12e-12h to exhibit the behavior as will be described
below. Here, the thickness of the gate insulating film of the
transistors 12e-12h is 5.7 nm, and that of the transistors
10e-1-10h-1 is 2.5 nm, for example.
[0059] The transistors 11e-1-11h-1 (second MOS transistors) have
their gate electrodes connected to the search lines 5a-5d, and
their drain electrodes grounded. The transistors 10e-1-10h-1 and
11e-1-11h-1 operate as the match section for matching the data
stored in the data storage capacitors of the memory cells 1e-1h
with the data set on the search lines 5a-5d. The configuration of
FIG. 6 differs from that of FIG. 5 in that the pairs of transistors
10e-1-10h-1 and 11e-1-11h-1 connected in series constituting the
match section are connected to the match line 3 and ground level in
the opposite manner to their counterparts of FIG. 5.
[0060] When the individual data storage capacitors of the memory
cells 1e-1h are charged to the high level by placing their digital
values to "1", they exhibit the refresh behavior of an ordinary
dynamic-type RAM: The high level charges are gradually discharged
because of the junction leakage of the transistors 12e-12h. In
addition, the data storage capacitors have their high level charges
leaked to the match line 3 through the gates of the transistors
10e-1-10h-1.
[0061] As described above, the thickness of the gate insulating
film of the transistors 10e-1-10h-1 is made thinner (2.5 nm, for
example) than that of the transistors 12e-12h so that the gate
leakage value of the former becomes substantially equal to an
ordinary junction leakage value. If the configuration can
compensate for the charges evaporated as the junction leakage by
passing the changes from the match line 3 through the gate leakage
of the transistors 10e-1-10h-1 in the direction of the arrow as
illustrated in FIG. 7A, the refresh time of the memory cells 1e-1h
will become indefinite ideally.
[0062] As concrete processing, as illustrated in FIG. 7B, the time
t1 the search data setting section 7 takes to set the search data
by charging the search lines is made shorter than the time t2 the
charge processor 6 takes to precharge the match line 3. Thus, the
gate leakage of the transistors 10e-1-10h-1 occurs in the direction
of the arrow of FIG. 7A, which can prolong the refresh time of the
data storage capacitors.
[0063] For example, as illustrated in FIG. 8, a conventional
dynamic-type RAM has a charge state corresponding to a memory cell
level (1) during an activating cycle of the word line 2 denoted by
WL (refresh time tREF(1)). In contrast with this, the present
embodiment 2 can achieve a charge state corresponding to a memory
cell level (2), thereby being able to prolong the refresh time from
tREF(1) to tREF(2), and to improve the refresh characteristic
considerably.
[0064] Incidentally, if the thickness of the gate insulating films
of the transistors 10e-10h is made too thin as compared with that
of the transistors 12e-12h in the configuration of FIG. 5, a charge
state corresponding to a memory cell level (3) can appear during an
activating cycle of the word line 2 denoted by WL, which will
shorten the refresh time from tREF(1) to tREF(3) Accordingly, the
refresh characteristic is deteriorated as compared with that of the
conventional dynamic-type RAM.
[0065] As described above, the present embodiment 2 is configured
as follows. First, the memory cells 1e-1h consist of dynamic-type
memory cells composed of transistors 12e-12hdisposed on a lattice
consisting of the word lines 2 and bit lines 4a-4d intersecting
with each other, and the data storage capacitors for storing 1-bit
digital values. Second, the match section is composed such that the
transistors 10e-1-10h-1 open and close the paths to the match line
3 in response to the charge states of the data storage capacitors,
and the transistors 11e-1-11h-1 open and close the paths to the
ground level in response to the charge states of the search lines
5a-5d. Third, the match line 3 is charged in a longer time than
charging the search lines 5a-5d. This is implemented by making the
thickness of the gate insulating films of the transistors
10e-1-10h-1 thinner than that of the transistors 12e-12h to enable
the charges stored on the match line 3 to be leaked to the data
storage capacitors through the gate electrodes, and to enable the
charge leakage from the match line 3 through the gate electrodes of
the transistors 10e-1-10h-1 to compensate for the charges stored in
the data storage capacitors. As a result, besides the advantages of
the foregoing embodiment 1, the present embodiment 2 can implement
the CAM cells with the dynamic-type cell configuration capable of
improving the refresh characteristic.
* * * * *