U.S. patent application number 10/821913 was filed with the patent office on 2004-09-30 for magnetic sensor and method of producing the same.
Invention is credited to Aiso, Kokichi, Oohashi, Toshiyuki, Sato, Hideki, Wakui, Yukio, Yoshida, Susumu.
Application Number | 20040189295 10/821913 |
Document ID | / |
Family ID | 26608211 |
Filed Date | 2004-09-30 |
United States Patent
Application |
20040189295 |
Kind Code |
A1 |
Sato, Hideki ; et
al. |
September 30, 2004 |
Magnetic sensor and method of producing the same
Abstract
On a single chip are formed a plurality of magnetoresistance
effect elements provided with pinned layers having fixed
magnetization axes in the directions that cross each other. On a
substrate 10 are formed magnetic layers that will become two
magnetic tunnel effect elements 11, 21 as magnetoresistance effect
elements. Magnetic-field-applying magnetic layers made of NiCo are
formed to sandwich the magnetic layers in plan view. A magnetic
field is applied to the magnetic-field-applying magnetic layers.
The magnetic field is removed after the magnetic-field-applying
magnetic layers are magnetized in the direction shown by arrow A.
As a result of this, by the residual magnetization of the
magnetic-field-applying magnetic layers, magnetic fields in the
directions shown by arrows B are applied to the magnetic layers
that will become magnetic tunnel effect elements 11, 21, whereby
the magnetization of the pinned layers of the magnetic layers that
will become magnetic tunnel effect elements 11, 21 is pinned in the
directions shown by arrows B.
Inventors: |
Sato, Hideki; (Iwata-gun,
JP) ; Oohashi, Toshiyuki; (Hamamatsu-shi, JP)
; Wakui, Yukio; (Iwata-gun, JP) ; Yoshida,
Susumu; (Hamamatsu-shi, JP) ; Aiso, Kokichi;
(Hamamatsu-shi, JP) |
Correspondence
Address: |
DICKSTEIN SHAPIRO MORIN & OSHINSKY LLP
Steven I. Weisburd
41st Floor
1177 Avenue of the Americas
New York
NY
10036-2714
US
|
Family ID: |
26608211 |
Appl. No.: |
10/821913 |
Filed: |
April 12, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10821913 |
Apr 12, 2004 |
|
|
|
10052525 |
Jan 23, 2002 |
|
|
|
Current U.S.
Class: |
428/692.1 ;
29/592.1; 338/32R |
Current CPC
Class: |
H01F 41/302 20130101;
Y10T 428/32 20150115; G01R 33/093 20130101; B82Y 25/00 20130101;
B82Y 40/00 20130101; Y10T 29/49037 20150115; G01R 33/09 20130101;
Y10T 29/49002 20150115 |
Class at
Publication: |
324/252 ;
338/032.00R; 428/692; 029/592.1 |
International
Class: |
G01R 033/09; H01L
043/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 24, 2001 |
JP |
2001-15805 |
Sep 17, 2001 |
JP |
2001-281703 |
Claims
1. (Canceled).
2. A magnetic sensor comprising; a magnetoresistance effect element
that contains a free layer and a pinned layer whose magnetization
direction is pinned, said magnetoresistance effect element having a
resistance value that changes in accordance with a relative angle
formed by the magnetization direction of the pinned layer and a
magnetization direction of the free layer; said magnetic sensor
being formed in such a manner that a plurality of said
magnetoresistance effect elements are provided in a single plane on
a single chip having a generally square shape, said
magnetoresistance effect elements are placed symmetrically with
respect to center lines of said generally square chip, and the
pinned layers of at least two of said plurality of
magnetoresistance effect elements have the pinned magnetization
directions that cross each other.
3. The magnetic sensor according to claim 2, including four of said
magnetoresistance effect elements constructing a X-axis or a Y-axis
magnetic sensor by full bridge connection of the four elements,
said pinned magnetization directions of the pinned layers of the
four elements being parallel to each other.
4. A magnetic sensor comprising eight magnetoresistance effect
elements including a first through an eight element, each of said
elements containing a free layer and a pinned layer whose
magnetization direction is pinned and each having a resistance
value that changes in accordance with a relative angle formed by a
magnetization direction of said pinned layer and a magnetization
direction of said free layer; said magnetic sensor being formed in
such a manner that said magnetoresistance effect elements are
provided in a single plane on a single chip having a generally
square shape having sides along an X-axis and a Y-axis that are
perpendicular to each other in a plan view; (a) said first element
being formed in a neighborhood of an end of the chip in a negative
direction of the X-axis and a little below a generally central part
of the chip in the Y-axis direction, and having a pinned
magnetization direction of said first element's pinned layer in a
direction of the X-axis; (b) said second element being formed in a
neighborhood of an end of the chip in a negative direction of the
X-axis and a little above a generally central part of the chip in
the Y-axis direction, and having a pinned magnetization direction
of said second element's pinned layer in the direction of the
X-axis; (c) said third element being formed in a neighborhood of an
end of the chip in the positive direction of the X-axis and a
little above a generally central part of the chip in the Y-axis
direction, and having a pinned magnetization direction of said
third element's pinned layer in the direction of the X-axis; (d)
said fourth element being formed in a neighborhood of an end of the
chip in the positive direction of the X-axis and a little below a
generally central part of the chip in the Y-axis direction, and
having a pinned magnetization direction of said fourth element's
pinned layer in the direction of the X-axis; (e) said fifth element
being formed in a neighborhood of an end of the chip in the
positive direction of the Y-axis and a little to the left of a
generally central part of the chip in the X-axis direction, and
having a pinned magnetization direction of said fifth element's
pinned layer in the direction of the Y-axis; (f) said sixth element
being formed in a neighborhood of an end of the chip in the
positive direction of the Y-axis and a little to the right of a
generally central part of the chip in the X-axis direction, and
having a pinned magnetization direction of said sixth element's
pinned layer in the direction of the Y-axis; (g) said seventh
element being formed in a neighborhood of an end of the chip in the
negative direction of the Y-axis and a little to the right of a
generally central part of the chip in the X -axis direction, and
having a pinned magnetization direction of said seventh element's
pinned layer in the direction of the Y-axis; and (h) said eighth
element being formed in a neighborhood of an end of the chip in the
negative direction of the Y-axis and a little to the left of a
generally central part of the chip in the X-axis direction, and
having a pinned magnetization direction of said eighth element's
pinned layer in the direction of the Y-axis.
5. The magnetic sensor according to claim 4 wherein: (a) said first
to fourth elements construct an X-axis magnetic sensor for
detecting a magnetic field in the X-axis direction by full bridge
connection of the first to fourth elements; and (b) said fifth to
eighth elements construct a Y-axis magnetic sensor for detecting a
magnetic field in the Y-axis direction by full bridge connection of
the fifth to eighth elements.
6. The magnetic sensor according to claim 5, wherein: (a) the
pinned magnetization direction of the pinned layer of the first and
the second elements are in the negative direction of the X-axis;
(b) the pinned magnetization direction of the pinned layer of the
third and the fourth elements are in the positive direction of the
X-axis; (c) the pinned magnetization direction of the pinned layer
of the fifth and the sixth elements are in the positive direction
of the Y-axis; and (d) the pinned magnetization direction of the
pinned layer of the seventh and the eighth elements are in the
negative direction of the Y-axis.
7. A magnetic sensor comprising a plurality of magnetoresistance
effect elements, each element containing a pinned layer and a free
layer and having a resistance value that changes in accordance with
a relative angle formed by a magnetization direction of the pinned
layer and a magnetization direction of the free layer: (a) said
magnetic sensor being formed in such a manner that said
magnetoresistance effect elements are provided on a single chip;
(b) an X-axis group of said magnetoresistance effect elements
constructing a X-axis magnetic sensor for detecting a magnetic
field in the X-axis direction; and (c) a Y-axis group of said
magnetoresistance effect elements constructing a Y-axis magnetic
sensor for detecting a magnetic field in the Y-axis direction
perpendicular to the X-axis.
8. The magnetic sensor according to claim 7, wherein: (a) said
X-axis group of magnetoresistance effect elements construct the
X-axis magnetic sensor by full bridge connection, and the pinned
magnetization directions of these magnetoresistance effect elements
are in the X-axis direction; and (b) said Y-axis group of
magnetoresistance effect elements construct the Y-axis magnetic
sensor by full bridge connection, and the pinned magnetization
directions of the magnetoresistance effect elements are in the
Y-axis direction.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This Application is a Division of application Ser. No.
10/052,525 filed on Jan. 23, 2002, claiming the priority of
Japanese Application No. 2001-281703, dated Sep. 17, 2001, and
Japanese Application No. 2001-15805, dated Jan. 24, 2001.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a magnetic sensor using a
magnetoresistance effect (magnetoresistive effect) element
containing a pinned layer and a free layer, and more particularly
to a magnetic sensor having two or more magnetoresistance effect
elements formed on a single chip where the magnetization directions
of the pinned layers of the magnetoresistance effect elements cross
each other, as well as a method of producing the same
[0004] 2. Description of the Background Art
[0005] Hitherto, as an element usable in a magnetic sensor, there
are known a giant magnetoresistance element (GMR element), a
magnetic tunnel effect element (TMR element, tunneling GMR), and
others. These magnetoresistance effect elements are provided with a
pinned layer whose magnetization direction is pinned (fixed) in a
predetermined direction and a free layer whose magnetization
direction changes in accordance with an external magnetic field,
thereby exhibiting a resistance value that accords with the
relative relationship between the magnetization direction of the
pinned layer and the magnetization direction of the free layer.
[0006] However, it is difficult to form two or more
magnetoresistance effect elements on a single minute chip where the
magnetization directions of the pinned layers of the
magnetoresistance effect elements cross each other. Such a single
chip has not been proposed yet, and therefore there arises a
problem such that a magnetic sensor made of a single chip using a
magnetoresistance effect element cannot have a wider application
range due to the restriction imposed on the magnetization direction
of the pinned layer.
SUMMARY OF THE INVENTION
[0007] A characteristic feature of the present invention lies in a
magnetic sensor including a magnetoresistance effect element that
contains a pinned layer and a free layer, said magnetoresistance
effect element having a resistance value that changes in accordance
with a relative angle formed by (or between)the magnetization
direction of the pinned layer and the magnetization direction of
the free layer, said magnetic sensor being formed in such a manner
that a plurality of said magnetoresistance effect elements are
provided on a single chip (one and the same substrate), and the
pinned layers of at least two of said plurality of
magnetoresistance effect elements have magnetization directions
that cross each other.
[0008] This allows that, since magnetoresistance effect elements in
which the magnetization directions of the pinned layers cross each
other are formed on one and the same substrate, a magnetic sensor
having a small size and a wide application range is provided.
[0009] Another characteristic feature of the present invention lies
in a method of producing a magnetic sensor including a
magnetoresistance effect element that contains a pinned layer and a
free layer, said magnetoresistance effect element having a
resistance value that changes in accordance with a relative angle
formed by the magnetization direction of the pinned layer and the
magnetization direction of the free layer, said method including
the steps of: forming a layer containing a magnetic layer that will
become said pinned layer (for example, an antiferromagnetic layer
and a ferromagnetic layer) in a predetermined configuration on a
substrate; forming magnetic-field-applying magnetic layers for
applying a magnetic field to the layer containing the magnetic
layer that will become said pinned layer: magnetizing said
magnetic-field-applying magnetic layers; and pinning the
magnetization direction of the magnetic layer that will become said
pinned layer with the residual magnetization of said
magnetic-field-applying magnetic layers.
[0010] According to the method above, the magnetic-field-applying
magnetic layers for applying a magnetic field to the layer
containing the magnetic layer that will become the pinned layer are
formed, for example, by plating or the like, and thereafter these
magnetic-field-applying magnetic layers are magnetized. The
magnetic field produced by the residual magnetization of the
aforesaid magnetic-field-applying magnetic layers then pins the
magnetization direction of the magnetic layer that will become the
aforesaid pinned layer. In this case, the step of forming said
magnetic-field-applying magnetic layers is advantageously a step of
forming said magnetic-field-applying magnetic layers so as to
sandwich the layer containing the magnetic layer that will become
said pinned layer in a plan view, and the magnetization direction
of said magnetic-field-applying magnetic layers is advantageously
different from a direction of the magnetic field produced by said
residual magnetization.
[0011] The direction of the magnetic field produced by the residual
magnetization of the aforesaid magnetic-field-applying magnetic
layers is dependent on the shape of the end surface of the
magnetic-field-applying magnetic layers. Therefore, by making a
suitably shaped end surface or by suitably placing the layer
containing the magnetic layer that will become the pinned layer
with respect to the end surface, the layer containing the magnetic
layer that will become the pinned layer can be imparted with a
magnetization having an arbitrary direction. This allows that two
or more magnetoresistance effect elements having pinned layers with
magnetizations pinned in different directions from each other can
be easily produced on one and the same substrate.
[0012] Still another characteristic feature of the present
invention lies in a method of producing a magnetic sensor including
a magnetoresistance effect element that contains a pinned layer and
a free layer, said magnetoresistance effect element having a
resistance value that changes in accordance with a relative angle
formed by a magnetization direction of the pinned layer and a
magnetization direction of the free layer, said method including
the steps of preparing a magnet array constructed in such a manner
that a plurality of permanent magnets are arranged at lattice
points of a square lattice, where a polarity of a magnetic pole of
each permanent magnet is different from a polarity of other
magnetic poles that are adjacent thereto and spaced apart therefrom
by the shortest distance; disposing a wafer in which a layer
containing a magnetic layer that will at least become said pinned
layer has been formed, above said magnet array; and pinning the
magnetization direction of the magnetic layer that will become said
pinned layer by using a magnetic field formed between one of said
magnetic poles and another of said magnetic poles that is adjacent
thereto and spaced apart therefrom by the shortest distance.
[0013] The above-mentioned magnet array is constructed in such a
manner that a plurality of permanent magnets are disposed at
lattice points of a square lattice, where a polarity of a magnetic
pole of each permanent magnet is different from a polarity of other
magnetic poles that are adjacent thereto and spaced apart therefrom
by the shortest distance. Therefore, above the magnet array, in a
plan view of the magnet array, a magnetic field in the rightward
direction from one N-pole to the S-pole located on the right side
of the N-pole, a magnetic field in the upward direction from the
N-pole to the S-pole located on the upside of the N-pole, a
magnetic field in the leftward direction from the N-pole to the
S-pole located on the left side of the N-pole, and a magnetic field
in the downward direction from the N-pole to the S-pole located on
the downside of the N-pole are formed (See FIGS. 56 and 57).
Similarly, to one S-pole, a magnetic field in the leftward
direction from the N-pole located on the right side of the S-pole,
a magnetic field in the downward direction from the N-pole located
on the upside of the S-pole, a magnetic field in the rightward
direction from the N-pole located on the left side of the S-pole,
and a magnetic field in the upward direction from the N-pole
located on the downside of the S-pole are formed. The
above-described method pins the magnetization direction of the
layer that will become the pinned layer by using these magnetic
fields, whereby a magnetic sensor in which the magnetization
directions of the pinned layers cross each other (in this case,
perpendicular to each other) can be easily produced on a single
chip.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] These and other objects, features, aspects, and advantages
of the present invention will become more apparent from the
following detailed description of the present invention when taken
in conjunction with the accompanying drawings, in which,
[0015] FIG. 1 is a conceptual plan view illustrating a magnetic
sensor according to embodiment 1 and embodiment 2 of the present
invention;
[0016] FIG. 2 is an enlarged view of the magnetic tunnel effect
element (group) shown in FIG. 1;
[0017] FIG. 3 is a cross-sectional view of the magnetic tunnel
effect element (group) shown in FIG. 2 and cut with a plane along
the line 1-1;
[0018] FIG. 4 is a schematic plan view of the magnetic tunnel
effect element shown in FIG. 3, illustrating an antiferromagnetic
film and a ferromagnetic film (pinned layer) of the element;
[0019] FIG. 5 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0020] FIG. 6 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0021] FIG. 7 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0022] FIG. 8 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0023] FIG. 9 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0024] FIG. 10 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0025] FIG. 11 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0026] FIG. 12 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0027] FIG. 13 is a schematic plan view of the magnetic sensor
according to embodiment 1 at one stage during the production:
[0028] FIG. 14 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0029] FIG. 15 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0030] FIG. 16 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0031] FIG. 17 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 1 at one stage during the
production;
[0032] FIG. 18 is a graph depicting the change of the MR ratio of
one magnetic tunnel effect element (group) shown in FIG. 1 when an
external magnetic field changing in magnitude in the longitudinal
direction (X-axis direction) of the element is applied to the
element;
[0033] FIG. 19 is a graph depicting the change of the MR ratio of
one magnetic tunnel effect element (group) shown in FIG. 1 when an
external magnetic field changing in magnitude in the direction
(Y-axis direction) perpendicular to the longitudinal direction of
the element is applied to the element;
[0034] FIG. 20 is a graph depicting the change of the MR ratio of
the other magnetic tunnel effect element (group) shown in FIG. 1
when an external magnetic field changing in magnitude in the
direction (X-axis direction) perpendicular to the longitudinal
direction of the element is applied to the element;
[0035] FIG. 21 is a graph depicting the change of the MR ratio of
the other magnetic tunnel effect element (group) shown in FIG. 1
when an external magnetic field changing in magnitude in the
longitudinal direction (Y-axis direction) of the element is applied
to the element;
[0036] FIG. 22 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0037] FIG. 23 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0038] FIG. 24 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0039] FIG. 25 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production:
[0040] FIG. 26 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0041] FIG. 27 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0042] FIG. 28 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production:
[0043] FIG. 29 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0044] FIG. 30 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0045] FIG. 31 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0046] FIG. 32 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production:
[0047] FIG. 33 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0048] FIG. 34 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0049] FIG. 35 is a schematic cross-sectional view of the magnetic
sensor according to embodiment 2 at one stage during the
production;
[0050] FIG. 36 is a graph depicting the change of the MR ratio of
one magnetic tunnel effect element (group) according to embodiment
2 when an external magnetic field changing in magnitude in the
longitudinal direction (X-axis direction in FIG. 1) of the element
is applied to the element;
[0051] FIG. 37 is a graph depicting the change of the MR ratio of
one magnetic tunnel effect element (group) according to embodiment
2 when an external magnetic field changing in magnitude in the
direction (Y-axis direction in FIG. 1) perpendicular to the
longitudinal direction of the element is applied to the
element:
[0052] FIG. 38 is a graph depicting the change of the MR ratio of
the other magnetic tunnel effect element (group) according to
embodiment 2 when an external magnetic field changing in magnitude
in the direction (X-axis direction in FIG. 1) perpendicular to the
longitudinal direction of the element is applied to the
element:
[0053] FIG. 39 is a graph depicting the change of the MR ratio of
the other magnetic tunnel effect element (group) according to
embodiment 2 when an external magnetic field changing in magnitude
in the longitudinal direction (Y-axis direction in FIG. 1) of the
element is applied to the element;
[0054] FIG. 40 is a graph depicting the magnetization curves of a
pinned layer and a free layer when a magnetic field changing in
magnitude within the direction perpendicular to the magnetization
direction of the pinned layer is applied to a magnetic tunnel
effect element group according to embodiment 1 and 2;
[0055] FIG. 41 is a plan view of another substrate, according to
the present invention, having a differently configured plating film
formed thereon;
[0056] FIG. 42 is a schematic plan view of a magnetic sensor
according to embodiment 3 of the present invention;
[0057] FIG. 43 is a schematic enlarged plan view of the first
X-axis GMR element shown in FIG. 42;
[0058] FIG. 44 is a schematic cross-sectional view of the first
X-axis GMR element shown in FIG. 43 and cut with a plane along the
line 2-2 of FIG. 43;
[0059] FIG. 45 is a view illustrating a construction of a spin
valve film of the first X-axis GMR element shown in FIG. 43;
[0060] FIG. 46 is a graph depicting the change in the resistance
value (solid line) of the first X-axis GMR element shown in FIG. 43
relative to a magnetic field changing in the X-axis direction and
the change in the resistance value (broken line) of the element
relative to a magnetic field changing in the Y-axis direction;
[0061] FIG. 47 is an equivalent circuit diagram of an X-axis
magnetic sensor included in the magnetic sensor shown in FIG.
42;
[0062] FIG. 48 is a graph depicting the change in the output
voltage (solid line) of the X-axis magnetic sensor shown in FIG. 47
relative to a magnetic field changing in the X-axis direction and
the change in the output voltage (broken line) of the sensor
relative to a magnetic field changing in the Y-axis direction;
[0063] FIG. 49 is a graph depicting the change in the output
voltage (solid line) of the Y-axis magnetic sensor included in the
magnetic sensor shown in FIG. 42 relative to a magnetic field
changing in the X-axis direction and the change in the output
voltage (broken line) of the sensor relative to a magnetic field
changing in the Y-axis direction;
[0064] FIG. 50 is a plan view of quartz glass on which a spin valve
film has been formed at one stage during the production of the
magnetic sensor shown in FIG. 42:
[0065] FIG. 51 is a plan view of a metal plate for preparing a
magnet array to be used in the production of the magnetic sensor
shown in FIG. 42;
[0066] FIG. 52 is a cross-sectional view of the metal plate and the
permanent bar magnets shown in FIG. 51 and cut with a plane along
the line 3-3 of FIG. 51:
[0067] FIG. 53 is a plan view of a plate for forming a magnet array
to be used in the production of the magnetic sensor shown in FIG.
42;
[0068] FIG. 54 is a cross-sectional view of the magnet array to be
used in the production of the magnetic sensor shown in FIG. 42;
[0069] FIG. 55 is a cross-sectional view showing a step in the
production of the magnetic sensor shown in FIG. 42;
[0070] FIG. 56 is a perspective view illustrating some magnets
taken out from the magnet array shown in FIG. 54;
[0071] FIG. 57 is a conceptual view illustrating a method for
pinning the magnetization direction of the pinned layer of each GMR
element of the magnetic sensor shown in FIG. 42;
[0072] FIG. 58 is a view illustrating a relationship between the
magnetic sensor shown in FIG. 42 and the azimuth; and
[0073] FIG. 59 is a graph depicting an output voltage of the
magnetic sensor shown in FIG. 42 relative to the azimuth.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0074] Hereafter, embodiments of the magnetic sensor according to
the present invention will be described with reference to the
attached drawings. The magnetic sensor according to the first
embodiment includes a generally square-shaped substrate 10 made of,
for example, SiO.sub.2/Si, glass, or quartz, two magnetic tunnel
effect elements (groups) 11, 21, a coil 30 for bias magnetic field,
and a plurality of electrode pads 40a to 40f, as illustrated in the
plan view of FIG. 1. Magnetic tunnel effect elements (groups) 11,
21 and coil 30 for bias magnetic field are connected respectively
to electrode pads 40a, 40b, 40c, 40d, and 40e, 40f. Since magnetic
tunnel effect element (group) 11 and magnetic tunnel effect element
(group) 21 are identical in structure, magnetic tunnel effect
element (group) 11 will be described hereafter as a representative
example, and the description of magnetic tunnel effect element
(group) 21 will be omitted.
[0075] Magnetic tunnel effect element (group) 11 is made of a
plurality of (in this example, twenty) magnetic tunnel effect
elements that are connected in series, as illustrated in the
enlarged plan view of FIG. 2. Each magnetic tunnel effect element
includes a plurality of lower electrodes 12 having a rectangular
shape in a plan view on substrate 10, as illustrated in FIG. 3
showing a partial cross-sectional view along the 1-1 plane of FIG.
2. Lower electrodes 12 are arranged in a row and spaced apart from
each other by a predetermined distance in the lateral direction.
Lower electrodes 12 are made of Ta (which may be Cr or Ti), which
is an electrically conductive non-magnetic metal material, and are
formed to have a thickness of about 30 nm. On each lower electrode
12 is respectively laminated an antiferromagnetic film 13 made of
PtMn having a thickness of about 30 nm and formed to have the same
planar shape as lower electrode 12.
[0076] A pair of ferromagnetic films 14, 14 made of NiFe having a
thickness of about 20 nm is laminated at an interval on each
antiferromagnetic film 13. These ferromagnetic films 14, 14 have a
rectangular shape in a plan view and are arranged so that the
longer sides thereof oppose each other in parallel. The
ferromagnetic films 14, 14 constitute a pinned layer in which the
magnetization direction is pinned by the antiferromagnetic film 13.
The ferromagnetic films 14, 14 are magnetized in the direction of
arrows in the partially enlarged plan view of FIG. 4 (i.e. in the
rightward direction). Here, the antiferromagnetic film 13 and the
ferromagnetic films (pinned layers) 14, 14 constitute a fixed
magnetization layer in which the magnetization direction of the
ferromagnetic films 14, 14 is substantially fixed (i.e. having a
fixed magnetization axis).
[0077] On each ferromagnetic film 14 is formed an insulating layer
15 having the same planar shape as the ferromagnetic film 14. This
insulating layer 15 is made of Al.sub.2P.sub.3 (Al--O), which is an
insulating material, and is formed to have a thickness of about 1
nm.
[0078] On the insulating layer 15 is formed a ferromagnetic film 16
having the same planar shape as the insulating layer 15 and made of
NiFe with a thickness of about 80 nm. This ferromagnetic film 16
constitutes a free layer (free magnetization layer) whose
magnetization direction changes in accordance with the direction of
an external magnetic field, and constitutes a magnetic tunnel
junction structure together with the pinned layer made of the
aforesaid ferromagnetic film 14 and the aforesaid insulating layer
15. In other words, the antiferromagnetic film 13, the
ferromagnetic film 14, the insulating layer 15, and the
ferromagnetic film 16 constitute one magnetic tunnel effect element
(excluding the electrodes and others).
[0079] On each ferromagnetic film 16 is respectively formed a dummy
film 17 having the same planar shape as each ferromagnetic film 16.
This dummy film 17 is constituted with an electrically conductive
non-magnetic metal material made of a Ta film having a thickness of
about 40 nm.
[0080] An interlayer insulating layer 18 for insulated separation
of the plurality of lower electrodes 12 and the antiferromagnetic
film 13 and for respective insulated separation of the pair of
ferromagnetic films 14, the insulating layers 15. the ferromagnetic
films 16, and the dummy films 17 disposed on each antiferromagnetic
film 13 is formed in a region that covers the substrate 10, lower
electrode 12, antiferromagnetic film 13, ferromagnetic films 14,
insulating layers 15, ferromagnetic films 16, and dummy films 17.
The interlayer insulating layer 18 is made of SiO.sub.2 and has a
thickness of about 250 nm.
[0081] Through this interlayer insulating layer 18. a contact hole
18a is respectively formed on each dummy film 17. Upper electrodes
19, 19 made of, for example, Al having a thickness of about 300 nm
are respectively formed so as to fill in the contact hole 18a and
to electrically connect each one of the pair of dummy films 17, 17
disposed on a different lower electrode 12 (and antiferromagnetic
film 13). Thus, by electrically connecting each of the
ferromagnetic films 16, 16 (each of the dummy films 17, 17) and
each of the antiferromagnetic films 13, 13 of a pair of adjacent
magnetic tunnel junction structures alternately and successively
with the lower electrode 12, antiferromagnetic film 13, and upper
electrode 19, there is formed a magnetic tunnel effect element
(group) 11 in which a plurality of magnetic tunnel junction
structures whose pinned layers have the same magnetization
direction are connected in series. Here, a protective film made of
SiO and SiN (illustration omitted) is formed on the upper
electrodes 19, 19.
[0082] The coil 30 is for imparting a bias magnetic field of
alternating current to the above-described magnetic tunnel effect
elements (groups) 11, 21, and is buried in the upper part of
substrate 10 so as to extend under the magnetic tunnel effect
elements (groups) 11, 21 in a direction parallel to the
magnetization direction of the pinned layer of the magnetic tunnel
effect elements (groups) 11, 21.
[0083] Next, a method of producing the above-mentioned magnetic
tunnel effect elements will be described with reference to FIGS. 5
to 17. Here, in FIGS. 5 to 12 and FIGS. 14 to 17, a magnetic tunnel
effect element group made of four magnetic tunnel effect elements
that are connected in series is shown for the sake of description.
Further, in these Figures, illustration of coil 30 is omitted.
[0084] First, as illustrated in FIG. 5, a film made of Ta
constituting the lower electrode 12 is formed to a thickness of
about 30 nm by sputtering on a substrate 10 (which is, at this
stage, one sheet of substrate from which a plurality of magnetic
sensors will be obtained by a later dicing process). Then, a film
made of PtMn and a film made of NiFe for constructing the
antiferromagnetic film 13 and the ferromagnetic film (pinned layer)
14 of the fixed magnetization layer are formed to have a thickness
of 30 nm and 20 nm, respectively, by sputtering. In this
description, the lower electrode 12, the PtMn film which will be
the antiferromagnetic film 13, and the FeNi film which will be the
ferromagnetic film 14 are referred to as a lower magnetic layer
SJ.
[0085] Thereafter, Al is laminated for only 1 am, and this is
oxidized by oxygen gas to form an Al.sub.2O.sub.3 (Al--O) film
which will become the insulating layer 15. Subsequently, a film
made of NiFe constituting the ferromagnetic film 16 of the free
layer is formed, for example, to have a thickness of 80 nm by
sputtering, and a film made of Ta constituting the dummy film 17 is
formed to have a thickness of 40 nm thereon. Here, the
ferromagnetic film 16 and the dummy film 17 are referred to as an
upper magnetic layer UJ. Next, by ion milling or the like, the
upper magnetic layer UJ is processed for separation, as illustrated
in FIG. 6, and the lower magnetic layer SJ is processed for
separation, as illustrated in FIG. 7. As a result, the layer having
a predetermined configuration, which will be the magnetic tunnel
effect elements, is formed.
[0086] Next, as illustrated in FIG. 8, a film made of SiO.sub.2
constituting the interlayer insulating layer 18 is formed by
sputtering so that the thickness thereof on the elements will be
250 nm, and a film made of Cr and a film made of NiFe are formed
thereon by sputtering to have a thickness of 100 nm and 50 nm,
respectively, as a plating underlayer film. Next, a resist 51 is
applied, as illustrated in FIG. 9. The resist 51 is patterned into
a predetermined shape so as not to cover the part where the plating
will be carried out later.
[0087] Next, as illustrated in FIG. 10, the wafer is plated with
NiCo as a magnetic-field-applying magnetic layer. The thickness of
NiCo is, for example, set to be 10 .mu.m. Then, after the resist is
removed as illustrated in FIG. 11, the entire surface is subjected
to milling (Ar milling) to remove WiFe formed as the plating
underlayer film, as illustrated in FIG. 12.
[0088] FIG. 13 is a plan view of the wafer in this state. Here, in
FIG. 13, each of the substrates that will be separated from each
other by a later dicing process are denoted with the reference
numeral 10 for convenience sake. Referring to FIG. 13, by the
previous patterning of the resist, the magnetic-field-applying
magnetic layers (NiCo) are each formed to have a generally square
shape with its center located at the center of four adjacent
substrates 10 which will be separated from each other later, and
are disposed so as to exclude parts (its portions) located
immediately above the magnetic tunnel effect elements (groups) 11,
21 in the longitudinal direction and in the lateral direction (i.e.
so as to sandwich the layer, having the predetermined
configuration, that will be the magnetic tunnel effect elements
(groups) 11, 21 where the lower magnetic layer SJ including the
magnetic layer that will be the pinned layer is formed in a plan
view). In this state, a magnetic field having a strength of about
1000 (Oe) is given in the direction parallel to the diagonal line
of the square that each magnetic-field-applying magnetic layer
forms, so as to magnetize the magnetic-field-applying magnetic
layer in the direction shown by arrow A in FIG. 13.
[0089] Next, the aforesaid magnetic field is removed. At this time,
the residual magnetization of the magnetic-field-applying magnetic
layer generates a magnetic field in the direction from the upper
side of each magnetic-field-applying magnetic layer to the lower
side of an adjacent magnetic-field-applying magnetic layer and a
magnetic field in the direction from the right side of each
magnetic-field-applying magnetic layer to the left side of an
adjacent magnetic-field-applying magnetic layer, as shown by arrows
B in FIG. 13. For this reason, to the parts that will become the
magnetic tunnel effect elements (groups) 11, 21, a magnetic field
parallel to the longitudinal direction of the parts is applied.
Then, in order to form the antiferromagnetic film 13 made of PtMn
into an ordered alloy and to impart an exchange coupling magnetic
field Hex, a high-temperature annealing process is carried out to
put the wafer into a high-temperature environment. As a result of
this, the magnetic tunnel effect elements (groups) 11, 21 formed on
one and the same substrate 10 will have pinned layers that are
magnetized (pinned) in different directions from each other (in
this case, in the directions that are perpendicular to each other).
In other words, the magnetic tunnel effect elements (groups) 11, 21
will each have a fixed magnetization axis in the direction shown by
the arrows in FIG. 1.
[0090] Subsequently, as illustrated in FIG. 14, the NiCo which is
the plating film and the sputtered NiFe (which is the plating
underlayer film) are removed by acid, and Cr is removed by milling,
as illustrated in FIG. 15. Thereafter, as illustrated in FIG. 16, a
contact hole 18a Is formed through the interlayer insulating film
18; an Al film is formed to have a thickness of 300 nm by
sputtering as illustrated in FIG. 17; and the Al film is processed
in a wiring pattern to form an upper electrode 19.
[0091] Then, electrode pads 40a to 40f illustrated in FIG. 1 are
formed on the substrate 10, and the electrode pads 40a to 40f are
respectively connected to the magnetic tunnel effect elements
(groups) 11, 21 and the toil 30. Finally, a film (not illustrated)
made of SiO having a thickness of 150 nm and a film (not
illustrated) made of SiN having a thickness of 1000 nm are formed
as a protective film (passivation film) by CVD. Thereafter, a part
of the protective film is opened by milling, RIE, or etching using
a resist mask to expose the electrode pads 40a to 40f.
Subsequently, the substrate is subjected to back grinding (thinning
by grinding); the substrate is separated into individual magnetic
sensors by dicing; and finally, the packaging is carried out.
[0092] To the magnetic tunnel effect element (group) 11 thus
produced and shown in FIG. 1, external magnetic fields changing in
magnitude along the respective axes in the X-axis direction shown
in FIG. 1 and in the Y-axis direction perpendicular to the X-axis
were applied, so as to measure the resistance changing ratio MR (MR
ratio) at the time the magnetic fields were applied. The results
are shown in FIGS. 18 and 19. As will be clear from FIGS. 18 and
19, the MR ratio of the magnetic tunnel effect element (group) 11
changed more greatly in response to the external magnetic field
changing in the X-axis direction than to the external magnetic
field changing in the Y-axis direction. This has confirmed that, in
the magnetic tunnel effect element (group) 11, the magnetization
direction of the pinned layer thereof is parallel to the
X-axis.
[0093] Similarly, to the magnetic tunnel effect element (group) 21
shown in FIG. 1, external magnetic fields changing in magnitude
along the respective axes in the X-axis direction and in the Y-axis
direction were applied, so as to measure the resistance changing
ratio MR (MR ratio) at the time the magnetic fields were applied.
The results are shown in FIGS. 20 and 21. As will be clear from
FIGS. 20 and 21, the MR ratio of the magnetic tunnel effect element
(group) 21 changed more greatly in response to the external
magnetic field changing in the Y-axis direction than to the
external magnetic field changing in the X-axis direction. This has
confirmed that, in the magnetic tunnel effect element (group) 21,
the magnetization direction of the pinned layer thereof is parallel
to the Y-axis. In other words, it has been confirmed that, on one
and the same substrate 10, this magnetic sensor has two magnetic
tunnel effect elements (magnetoresistance effect elements) having
pinned layers that are pinned so that the magnetization directions
thereof are different from each other (i.e. so that the
magnetization directions thereof cross each other).
[0094] Next, a magnetic sensor according to the second embodiment
will be described. The second embodiment is different from the
first embodiment only in that, whereas the fixed magnetization
layer of the first embodiment is constituted with PtMn and NiFe,
the fixed magnetization layer of the second embodiment is
constituted with a film made of MnRh having a thickness of 30 nm
and a film made of NiFe (pinned layer) having a thickness of 40 nm.
On the other hand, by this difference in the material of the fixed
magnetization layer, the method of producing the second embodiment
is a little different from that of the first embodiment, which will
be described as follows.
[0095] Namely, in the second embodiment, as illustrated in FIG. 22,
a film made of Ta having a thickness of 30 nm, a film made of MnRh
having a thickness of 30 nm, and a film made of NiFe having a
thickness of 40 nm are formed on a substrate 10 by sputtering so as
to form a lower magnetic layer SJ. Subsequently, an Al film of 1 nm
is formed and oxidized to form an insulating layer 15. A film made
of NiFe having a thickness of 40 nm and a film made of Ta having a
thickness of 40 nm are formed thereon so as to form an upper
magnetic layer UJ.
[0096] Subsequently, as illustrated in FIG. 23, the upper magnetic
layer UJ is processed for separation, and the lower magnetic layer
SJ is processed for separation, as illustrated in FIG. 24. Next, as
illustrated in FIG. 25, SiO.sub.2 is sputtered to form a film
having a thickness of 250 nm so as to form an interlayer insulating
layer 18, and successively a contact hole 18a is formed through the
interlayer insulating layer 18, as illustrated in FIG. 26.
Subsequently, as illustrated in FIG. 27, Al is sputtered to form a
film having a thickness of 300 nm and processed in a wiring pattern
to form an upper electrode 19. Then, as illustrated in FIG. 28, a
protective film 20 made of SiO and SiN is formed by CVD.
[0097] Next, as illustrated in FIG. 29, a film made of Cr and a
film made of NiFe are formed by sputtering to have a thickness of
100 nm and 50 nm, respectively, as a plating underlayer film, and
successively, a resist 51 is applied, as illustrated in FIG. 30.
The resist 51 is patterned into a predetermined shape so as not to
cover the part where the plating will be carried out later.
[0098] Next, as illustrated in FIG. 31, the wafer is plated with
NICO as a magnetic-field-applying magnetic layer. The thickness of
NiCo is, for example, set to be 10 .mu.m. Then, after the resist is
removed as illustrated in FIG. 32, the entire surface is subjected
to ruing (Ar milling) to remove NiFe formed as the plating
underlayer film, as illustrated in FIG. 33. At this stage, the
wafer is in the state shown in FIG. 13. In this state, a magnetic
field having a strength of about 1000 (Oe) is given in the
direction parallel to the diagonal line of the square that each
magnetic-field-applying magnetic layer forms, so as to magnetize
the magnetic-field-applying magnetic layer in the direction shown
by arrow A in FIG. 13. Thereafter, the magnetic field is
removed.
[0099] At this time, to the parts that will later become the
magnetic tunnel effect elements (groups) 11', 21', a magnetic field
parallel to the longitudinal direction of the parts is applied by
the residual magnetization of NiCo. Then, a high-temperature
annealing process is carried out to put the wafer into a
high-temperature environment. As a result of this, the magnetic
tunnel effect elements (groups) 11', 21' formed on one and the same
substrate 10' will have pinned layers that are magnetized (pinned)
in different directions from each other (in this case, in the
directions that are perpendicular to each other). After the
high-temperature annealing process is finished, the plating film
NiCo and the plating underlayer film NiFe are removed by acid as
illustrated in FIG. 34, and the plating underlayer film Cr Is
removed by milling, as illustrated in FIG. 35. Thereafter, a
process similar to that of the first embodiment is carried out.
[0100] To the magnetic tunnel effect element (group) 11' thus
produced and shown in FIG. 1, external magnetic fields changing in
magnitude along the respective axes in the X-axis direction and in
the Y-axis direction were applied, so as to measure the resistance
changing ratio MR (MR ratio) at the time the magnetic fields were
applied. The results are shown in FIGS. 36 and 37. As will be clear
from FIGS. 36 and 37, the MR ratio of the magnetic tunnel effect
element (group) 11' changed more greatly in response to the
external magnetic field changing in the X-axis direction than to
the external magnetic field changing in the Y-axis direction. This
has confirmed that, in the magnetic tunnel effect element (group)
11'. the magnetization direction of the pinned layer thereof is
parallel to the X-axis.
[0101] Similarly, to the magnetic tunnel effect element (group) 21'
shown in FIG. 1. external magnetic fields changing in magnitude
along the respective axes in the X-axis direction and in the Y-axis
direction were applied, so as to measure the resistance changing
ratio MR (MR ratio) at the time the magnetic fields were applied.
The results are shown in FIGS. 38 and 39. As will be clear from
FIGS. 38 and 39, the MR ratio of the magnetic tunnel effect element
(group) 21' changed more greatly in response to the external
magnetic field changing in the Y-axis direction than to the
external magnetic field changing in the X-axis direction. This has
confirmed that, in the magnetic tunnel effect element (group) 21',
the magnetization direction of the pinned layer thereof is parallel
to the Y-axis. In other words, it has been confirmed that, on one
and the same substrate 10', this magnetic sensor according to the
second embodiment has two magnetic tunnel effect elements
(magnetoresistance effect elements) having pinned layers that are
pinned so that the magnetization directions thereof cross each
other (i.e. are different from each other).
[0102] As described above, the magnetic sensors according to the
first and second embodiments have, on one and the same substrate
(on a single chip), magnetic tunnel effect elements in which the
magnetization directions of the pinned layers cross each other
(i.e. the magnetization directions of at least two of the pinned
layers form an angle other than 0.degree. and 180.degree.). For
this reason, these magnetic sensors can be used as a small magnetic
sensor (for example, as a geomagnetism sensor or the like) that is
requested to detect magnetic fields in different directions. Also,
according to the methods of the above-described embodiments, these
sensors can be easily produced.
[0103] Here, in the first embodiment, since PtMn is used in the
fixed magnetization layer as a pinning layer, the magnetization
direction of the pinned layer in the fixed magnetization layer must
be pinned at the timing at which the wafer is initially brought to
a high temperature. Therefore, in the first embodiment, the wafer
is subjected to a high-temperature annealing process at a stage
prior to the high-temperature process by CVD or the like that is
carried out for forming the protective film. In contrast, in the
second embodiment, MnRh is used as a pinning layer of the fixed
magnetization layer. The MnRh film will be deteriorated in quality
if another high-temperature process is carried out after the
high-temperature annealing process. Therefore, in the second
embodiment, the high-temperature annealing process is carried out
after the high-temperature process by CVD or the like for forming
the protective film is carried out.
[0104] Further, according to the above-described production methods
of the first and second embodiments, one can obtain a magnetic
tunnel effect element (group) that exhibits an even-function
property to an external magnetic field to be detected. In other
words, when a magnetic field changing in magnitude within the
direction perpendicular to the magnetization direction of the
pinned layer is applied to the magnetic tunnel effect element
groups 11, 21, 11', 21', the magnetization of the pinned layer
changes smoothly as illustrated by the line LP of FIG. 40. On the
other hand, the free layer of these elements reacts sensitively to
the direction of the aforesaid external magnetic field due to the
shape anisotropy, and the magnetization of the free layer changes
in a stepwise manner when the magnitude of the external magnetic
field approaches the neighborhood of "0", as illustrated by the
line LF of FIG. 40. As a result of this, the relative angle formed
between the magnetization direction of the pinned layer and the
magnetization direction of the free layer attains the maximum value
(approximately 90.degree.) when the external magnetic field is "0"
and, according as the magnitude (absolute value) of the external
magnetic field increases, the relative angle decreases. This can be
confirmed by FIGS. 19, 20, 37, and 38.
[0105] Further, as will be also clear from FIG. 13, when a plating
film (NiCo) constituting each magnetic-field-applying magnetic
layer is magnetized in a predetermined direction shown by arrow A
in FIG. 13, the direction of the magnetic field generated between
the plating films by the residual magnetization of the plating
films will be different from the magnetization direction of the
plating films but will be the direction perpendicular to the end
surfaces of the plating films M as shown by arrows B in FIG. 13.
Therefore, if the end surface shape of the plating films M is
designed, for example, as shown in FIG. 41 and the plating films
are magnetized in the direction shown by arrow C, a magnetic field
having a desired direction (direction shown by arrows D) can be
locally generated at a suitable position on the wafer. Therefore,
by using this, one can produce magnetic tunnel effect elements
TMR1, TMP2 having fixed magnetization axes in desired directions on
a single substrate (magnetic tunnel effect elements TMR1, TMR2 in
which the magnetization directions of the pinned layers cross each
other on a single chip).
[0106] Next, a magnetic sensor according to the third embodiment of
the present invention will be described. While the magnetic sensors
of the above-described first and second embodiments are constituted
with TMR elements, the magnetic sensor of the third embodiment is
constituted with GMR elements. Further, this magnetic sensor is
provided with an X-axis magnetic sensor for detecting a magnetic
field in the X-axis direction and a Y-axis magnetic sensor for
detecting a magnetic field in the Y-axis direction perpendicular to
the aforesaid X-axis.
[0107] More specifically described, this magnetic sensor 60 has a
rectangular (generally square) shape having sides along the X-axis
and the Y-axis that are perpendicular to each other in a plan view
as illustrated in FIG. 42, and includes a single chip (same
substrate) 60a made of quartz glass having a small thickness in the
Z-axis direction perpendicular to the X-axis and the Y-axis, a sum
of eight GMR elements 61 to 64, 71 to 74 formed on the chip 60a, a
sum of eight pads 65 to 68, 75 to 78 formed on the chip 60a, and a
connecting line that connects the pads and the elements.
[0108] The first X-axis GMR element 61 is formed in a neighborhood
of the end of the chip 60a in the negative direction of the X-axis
and a little below a generally central part of the chip 60a in the
Y-axis direction, and the pinned magnetization direction of the
pinned layer is in the negative direction of the X-axis, as
illustrated by an arrow in FIG. 42. The second X-axis GMR element
62 is formed in a neighborhood of the end of the chip 60a in the
negative direction of the X-axis and a little above a generally
central part of the chip 60a in the Y-axis direction, and the
pinned magnetization direction of the pinned layer is in the
negative direction of the X-axis, as illustrated by an arrow in
FIG. 42. The third X-axis GMR element 63 is formed in a
neighborhood of the end of the chip 60a in the positive direction
of the X-axis and a little above a generally central part of the
chip 60a in the Y-axis direction, and the pinned magnetization
direction of the pinned layer is in the positive direction of the
X-axis, as illustrated by an arrow in FIG. 42. The fourth X-axis
GMR element 64 is formed in a neighborhood of the end of the chip
60a in the positive direction of the X-axis and a little below a
generally central part of the chip 60a in the Y-axis direction, and
the pinned magnetization direction of the pinned layer is in the
positive direction of the X-axis, as illustrated by an arrow in
FIG. 42.
[0109] The first Y-axis GMR element 71 is formed in a neighborhood
of the end of the chip 60a in the positive direction of the Y-axis
and a little to the left of a generally central part of the chip
60a in the X-axis direction, and the pinned magnetization direction
of the pinned layer is in the positive direction of the Y-axis, as
illustrated by an arrow in FIG. 42. The second Y-axis GMR element
72 is formed in a neighborhood of the end of the chip 60a in the
positive direction of the Y-axis and a little to the right of a
generally central part of the chip 60a in the X-axis direction, and
the pinned magnetization direction of the pinned layer is in the
positive direction of the Y-axis, as illustrated by an arrow in
FIG. 42. The third Y-axis GMR element 73 is formed in a
neighborhood of the end of the chip 60a in the negative direction
of the Y-axis and a little to the right of a generally central part
of the chip 60a in the X-axis direction, and the pinned
magnetization direction of the pinned layer is in the negative
direction of the Y-axis, as illustrated by ah arrow in FIG. 42. The
fourth Y-axis GMR element 74 is formed in a neighborhood of the end
of the chip 60a in the negative direction of the Y-axis and a
little to the left of a generally central part of the chip 60a in
the X-axis direction, and the pinned magnetization direction of the
pinned layer is in the negative direction of the Y-axis, as
illustrated by an arrow in FIG. 42.
[0110] The GMR elements 61 to 64, 71 to 74 have substantially the
same structure with each other except that the position thereof on
the chip 60a and the pinned magnetization direction of the pinned
layer relative to the chip 60a are different. Therefore, the
structure thereof will be described hereafter using the first
X-axis GMR element 61 as a representative example.
[0111] The first X-axis GMR element 61 includes a plurality of
narrow band-shaped parts 61a . . . 61a made of a spin valve film SV
and having a longitudinal direction in the Y-axis direction and
bias magnet films (hard ferromagnetic thin film layers) 61b . . .
61b made of a hard ferromagnetic material such as CoCrPt formed
under the two ends of each narrow band-shaped part 61a in the
Y-axis direction and having a high magnetic coercive force and a
high square ratio, as illustrated in FIG. 43 which is a plan view
and in FIG. 44 which is a schematic cross-sectional view of the
first X-axis GMR element 61 cut with a plane along the line 2-2 of
FIG. 43. Each of the narrow band-shaped parts 61a . . . 61a extends
in the X-axis direction on the upper surface of each bias magnet
film 61b and is bonded to an adjacent narrow band-shaped part
61a.
[0112] The spin valve film SV of the first X-axis GMR element 61
is, as shown by the film construction in FIG. 45, composed of a
free layer (free magnetization layer) F. an electrically conductive
spacer layer S made of Cu having a thickness of 2.4 nm (24 .ANG.),
a fixed magnetization layer P, and a cap layer C made of titanium
(Ti) or tantalum (Ta) having a thickness of 2.5 nm (25 .ANG.) which
are successively laminated on a chip 60a constituting a
substrate.
[0113] The free layer F is a layer whose magnetization direction
changes in accordance with the direction of an external magnetic
field, and is composed of a CoZrNb amorphous magnetic layer 61-1
formed immediately above the substrate 60a and having a thickness
of 8 nm (80 .ANG.). a NiFe magnetic layer 61-2 formed on the CoZrNb
amorphous magnetic layer 61-1 and having a thickness of 3.3 nm (33
.ANG.), and a CoFe layer 61-3 formed on the NiFe layer 61-2 and
having a thickness of about 1 to 3 nm (10 to 30 .ANG.). The CoZrNb
amorphous magnetic layer 61-1 and the NiFe magnetic layer 61-2
constitute a soft ferromagnetic thin film layer. The CoFe layer
61-3 is for preventing diffusion of Ni in the NiFe layer 61-2 and
Cu 61-4 in the spacer layer S. Here, the above-described bias
magnet films 61b . . . 61b apply a bias magnetic field to the free
layer F in the Y-axis direction (right and left directions shown by
arrows in FIG. 43) for maintaining the uniaxial anisotropy of the
free layer F.
[0114] The fixed magnetization layer P is a lamination of a CoFe
magnetic layer 61-5 having a thickness of 2.2 nm (22 .ANG.) and an
antiferromagnetic film 61-6 formed from a PtMn alloy containing 45
to 55 mol % of Pt and having a thickness of 24 nm (240 .ANG.). The
CoFe magnetic layer 61-5 is lined with the magnetized
antiferromagnetic film 61-6 in an exchange coupling manner so as to
constitute a pinned layer whose magnetization direction
(magnetization vector) is pinned (fixed) in the negative direction
of the X-axis.
[0115] The first X-axis GMR element 61 thus constructed exhibits a
resistance value that changes generally in proportion to an
external magnetic field that changes along the X-axis in the range
from -Hc to +Hc, as shown by a solid line in FIG. 46, and exhibits
a generally constant resistance value to an external magnetic field
that changes along the Y-axis, as shown by a broken line in FIG.
46.
[0116] The X-axis magnetic sensor is constructed by full bridge
connection of the first to fourth X-axis GMR elements 61 to 64, as
shown by an equivalent circuit in FIG. 47. Here, in FIG. 47, the
arrows show pinned magnetization directions of the pinned layers of
the GMR elements 61 to 64. In such a construction, the pad 67 and
the pad 68 are connected respectively to the positive electrode and
the negative electrode of a constant power source (not illustrated)
so as to give a voltage Vxin+ (5 V in this example) and a voltage
Vxin- (0 V in this example). Then, the voltages of the pad 65 and
the pad 66 are taken out as a voltage Vxout+ and a voltage Vxout-,
and the voltage difference thereof (Vxout+-Vxout-) is taken out as
a sensor output Vxout. As a result of this, the X-axis magnetic
sensor shows an output voltage Vxout that changes generally in
proportion to an external magnetic field that changes along the
X-axis in the range from -Hc to +Hc, as shown by a solid line in
FIG. 48, and shows a generally "0" output voltage to an external
magnetic field that changes along the Y-axis, as shown by a broken
line in FIG. 48.
[0117] The Y-axis magnetic sensor is constructed by full bridge
connection of the first to fourth Y-axis GMR elements 71 to 74 in
the same manner as the X-axis magnetic sensor. Further, the pad 77
and the pad 78 are connected respectively to the positive electrode
and the negative electrode of a constant power source (not
illustrated) so as to give a voltage Vyin+ (5 V in this example)
and a voltage Vyin- (0 V in this example). Then, the voltage
difference between the pad 75 and the pad 76 is taken out as a
sensor output Vyout. As a result of this, the Y-axis magnetic
sensor shows an output voltage Vyout that changes generally in
proportion to an external magnetic field that changes along the
Y-axis in the range from -Hc to +Hc, as shown by a broken line in
FIG. 49, and shows a generally "0" output voltage to an external
magnetic field that changes along the X-axis, as shown by a solid
line in FIG. 49.
[0118] Next, a method of producing the magnetic sensor 60
constructed in the aforesaid manner will be described. First, a
plurality of films M. which are made of the aforesaid spin valve
film SV and the aforesaid bias magnet film 61b, and which will
constitute individual GMR elements, are formed in a manner like
islands on a rectangular quartz glass 60a1, as illustrated by the
plan view of FIG. 50. The films M are formed by successive
lamination to precise thicknesses using a ultra high vacuum
apparatus. These films M are formed so that the films M will be
located at the positions of the GMR elements 61 to 64, 71 to 74
shown in FIG. 42 when the quartz glass .alpha.al is cut along the
broken line of FIG. 50 by a cutting process carried out later and
separated into individual chips 60a shown in FIG. 42. Further,
alignment (positioning) marks 60b having a rectangular shape
excluding a shape of a cross are formed at the four corners of the
quarts glass 60a1.
[0119] Next, as shown in FIG. 51 which is a plan view and in FIG.
52 which is a cross-sectional view cut with the cross section along
the line 3-3 of FIG. 51, a rectangular metal plate 81 is prepared
in which a plurality of square through-holes are formed in a square
lattice configuration (namely, square through-holes having sides
parallel to the X-axis and the Y-axis are formed to be equally
spaced apart from each other along the X-axis and the Y-axis).
Then, permanent bar magnets 82 . . . 82 having a rectangular
parallelopiped shape and having approximately the same square cross
section as the through-holes are inserted into the through-holes of
the metal plate 81 so that the end surfaces of the permanent bar
magnets 82 . . . 82, where the magnetic poles are formed, will be
parallel to the metal plate 81. At this time, the permanent bar
magnets 82 . . . 82 are arranged so that the polarity of the
magnetic pole of each permanent bar magnet 82 will be different
from the polarity of the magnetic pole of the other permanent bar
magnets 82 adjacent thereto and space apart therefrom by the
shortest distance. Here, the permanent bar magnets 82 . . . 82 to
be used have a magnetic charge of the same magnitude.
[0120] Next, as shown in a plan view of FIG. 53. a plate 83 is
prepared which has a thickness of about 0.5 mm and which is made of
transparent quartz glass having approximately the same rectangular
shape as the aforesaid metal plate 81. This plate 83 is let to have
alignment (positioning) marks 83a having a shape of a cross on the
four corners for positioning in cooperation with the alignment
marks 60b of the aforesaid quarts glass 60a1. Further, in the
central part, alignment marks 83b are formed at positions
corresponding to the outer shape of the permanent bar magnets 82 .
. . 82 that are inserted into the aforesaid metal plate 81.
Subsequently, as illustrated in FIG. 54, the upper surface of the
permanent bar magnets 82 . . . 82 are bonded to the lower surface
of the plate 83 by means of an adhesive. At this time, the relative
position of the permanent bar magnets 82 . . . 82 to the plate 83
is determined by using the alignment marks 83b. Then, the metal
plate 81 is removed from the lower side. At this stage, the
permanent bar magnets 82 . . . 82 and the plate 83 form a magnet
array constructed in such a manner that a plurality of permanent
magnets having square end surfaces constituting the magnetic poles
are disposed at lattice points of a square lattice and the polarity
of the magnetic pole of each permanent magnet is different from the
polarity of the magnetic pole of the other permanent magnets
adjacent thereto and spaced apart therefrom by the shortest
distance.
[0121] Next, as illustrated in FIG. 55, the quartz glass 60a1, on
which the films to become the GMR elements (the layer containing
the magnetic layer to become the pinned layer, that is, the layer
containing the magnetic layer to become the fixed magnetization
layer) are formed, is positioned so that the surface on which the
films to become the GMR elements are formed will be brought into
contact with the upper surface of the plate 83. The relative
position of the quartz glass 60a1 to the plate 83 is exactly
determined by bringing the cross shape of the alignment marks 83a
into respective coincidence with the part of the aforesaid
alignment marks 60b where the cross shape has been removed.
[0122] FIG. 56 is a perspective view illustrating a state in which
four of the aforesaid permanent bar magnets 82 . . . 82 have been
taken out. As will be clear from this figure, above the upper
surface of the permanent bar magnets 82 . . . 82, magnetic fields
are formed from one N-pole towards the four S-poles adjacent to the
N-pole by the shortest distance, i.e. in four directions that are
different from each other by 90.degree.. Therefore, as illustrated
by a model view of FIG. 57, in the state in which the quartz glass
60a1 is placed on the upper surface of the plate 83 shown in FIG.
55, magnetic fields in the positive direction of the Y-axis, in the
positive direction of the X-axis, in the negative direction of the
Y-axis, and in the negative direction of the X-axis are applied to
the films which are placed in parallel to each side of the square
end surface of one N-pole and which will become the GMR
elements.
[0123] In this embodiment, by using such magnetic fields, a thermal
treatment is carried out to fix the magnetization direction of the
fixed magnetization layer P (the pinned layer of the fixed
magnetization layer P). Namely, in the state shown in FIG. 55. the
plate 83 and the quartz glass 60a1 are fixed to each other by a
clamp CL, heated to 250.degree. C. to 280.degree. C. in vacuum, and
left to stand in this state for about four hours.
[0124] Thereafter, the quartz glass 60a1 is. taken out; the pads 65
to 68. 75 to 78 shown in FIG. 42 are formed; a wiring connecting
these is formed; and finally the quartz glass 60a1 is cut along the
broken lines shown in FIG. 50. The above process completes the
production of the magnetic sensor 60 shown in FIG. 42.
[0125] Next, the result of measurement of geomagnetism using the
aforesaid magnetic sensor 60 will be described. In this
measurement, the azimuth .theta. (measurement angle) is defined as
0.degree. when the positive direction of the Y-axis of the magnetic
sensor 60 is directed to the south, as illustrated in FIG. 58. The
measurement results are shown in FIG. 59. As will be clear from
FIG. 59. the X-axis magnetic sensor output Sx shown by a solid line
changes like a sine curve, and the Y-axis magnetic sensor output Sy
shown by a broken line changes like a cosine curve. This result is
exactly as expected from the characteristics shown in FIGS. 48 and
49.
[0126] In this case, the azimuth can be determined by (1)
.theta.=arctan(Sx/Sy) when the X-axis magnetic sensor output Sx and
the Y-axis magnetic sensor output Sy both assume positive values;
(2) .theta.=180.degree.+arctan(Sx/Sy) when the Y-axis magnetic
sensor output Sy assumes a negative value: and (3)
.theta.=360.degree.+arctan(Sx/Sy) when the X-axis magnetic sensor
output Sx assumes a negative value and the Y-axis magnetic sensor
output Sy assumes a positive value. Therefore, the magnetic sensor
60 can be used, for example, as a geomagnetism (azimuth) sensor
that can be mounted onto portable type electronic devices such as a
portable telephone. Here, if the representation in the range from
-90.degree. to 0.degree. is permitted when the azimuth is within
the range from 270.degree. to 360.degree., the azimuth may be
determined by .theta.=arctan(Sx/Sy) when the output Sy is positive,
and by .theta.=180.degree.+arctan(Sx/Sy) when the output Sy is
negative.
[0127] As described above, according to the third embodiment, a
magnet array is prepared which is constructed in such a manner that
a plurality of permanent magnets are disposed at lattice points of
a square lattice and the polarity of the magnetic pole of each
permanent magnet is different from the polarity of the magnetic
pole of the other permanent magnets adjacent thereto and spaced
apart therefrom by the shortest distance, and the magnetization
direction of the magnetic layer that will become the aforesaid
pinned layer is pinned with the use of the magnetic fields formed
by the magnet array. Therefore, on a single chip, one can easily
form GMR elements in which the pinned magnetization directions of
the pinned layers are different from each other (perpendicular to
each other). Further, by this method, one can produce single chips
each having GMR elements in which the pinned magnetization
directions of the pinned layers are different from each other, at a
time and in a large amount, thereby leading to reduction in the
cost of producing the single chips.
[0128] Here, the present invention is by no means limited to the
aforesaid embodiments, and various modifications may be made within
the scope of the present invention. For example, though NiCo having
a large residual magnetization is adopted as a plating film in the
aforesaid first and second embodiments, other materials (for
example, Co) having a large residual magnetization may be adopted
in place of NiCo. Further, the method of fixing the magnetization
direction of the fixed magnetization layer in the first and second
embodiments can be applied to other magnetoresistance effect
elements having pinned layers (layers having a fixed magnetization
axis) such as in the third embodiment. Furthermore, though PtMn is
used as a pinning layer of the fixed magnetization layer P in the
aforesaid three embodiments, FeMn, IrMn, or the like may be used in
place of this PtMn.
* * * * *