U.S. patent application number 10/644865 was filed with the patent office on 2004-09-23 for oscillator circuit and l load differential circuit achieving a wide oscillation frequency range and low phase noise characteristics.
This patent application is currently assigned to RENESAS TECHNOLOGY CORP.. Invention is credited to Hashizume, Yasushi, Komurasaki, Hiroshi, Kumamoto, Toshio, Sano, Tomohiro, Sato, Hisayasu.
Application Number | 20040183606 10/644865 |
Document ID | / |
Family ID | 32958725 |
Filed Date | 2004-09-23 |
United States Patent
Application |
20040183606 |
Kind Code |
A1 |
Komurasaki, Hiroshi ; et
al. |
September 23, 2004 |
Oscillator circuit and L load differential circuit achieving a wide
oscillation frequency range and low phase noise characteristics
Abstract
An oscillator circuit is formed of a differential LC resonant
circuit formed of an L load differential circuit including
inductance-variable portions and a capacitor element, and a
positive feedback circuit formed of N-channel MOS transistors. The
inductance-variable portion is configured to vary the inductance by
selecting a plurality of switch circuits arranged between a
plurality of arbitrary positions on a spiral interconnection layer
and the input/output terminal, and thereby can control an
oscillation frequency. The inductance-variable portions form an
inductor pair when the switch circuit among the switch circuits
coupled between the first input/output terminals is turned on
together with the switch circuit.
Inventors: |
Komurasaki, Hiroshi; (Hyogo,
JP) ; Sano, Tomohiro; (Hyogo, JP) ; Sato,
Hisayasu; (Hyogo, JP) ; Kumamoto, Toshio;
(Hyogo, JP) ; Hashizume, Yasushi; (Hyogo,
JP) |
Correspondence
Address: |
BURNS DOANE SWECKER & MATHIS L L P
POST OFFICE BOX 1404
ALEXANDRIA
VA
22313-1404
US
|
Assignee: |
RENESAS TECHNOLOGY CORP.
|
Family ID: |
32958725 |
Appl. No.: |
10/644865 |
Filed: |
August 21, 2003 |
Current U.S.
Class: |
331/117R |
Current CPC
Class: |
H03B 5/1215 20130101;
H03B 5/1268 20130101; H03B 5/1847 20130101; H03B 5/1228 20130101;
H03B 5/1256 20130101; H03B 5/1265 20130101; H03B 5/1243
20130101 |
Class at
Publication: |
331/117.00R |
International
Class: |
H03B 005/00 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 4, 2003 |
JP |
2003-056952(P) |
Claims
What is claimed is:
1. An oscillator circuit for performing oscillation by positive
feedback of an LC resonant circuit, wherein said LC resonant
circuit includes a parallel resonant circuit formed of an
inductance-variable portion allowing variation of an inductance by
a switch circuit and a capacitor element.
2. The oscillator circuit according to claim 1, wherein said
inductance-variable portion includes first and second input/output
terminals, a spiral interconnection layer starting from said first
input/output terminal, and formed on a semiconductor substrate with
an interlayer insulating film therebetween, and a plurality of
switch circuits having first terminals connected to arbitrary
positions on said interconnection layer, and having second
terminals commonly connected to said second input/output terminal,
and when one of said plurality of switch circuits is turned on, the
position on said interconnection layer connected to said turned-on
switch circuit is electrically coupled to said second input/output
terminal.
3. The oscillator circuit according to claim 2, wherein said
inductance-variable portion further includes a plurality of second
switch circuits each having a first terminal connected to the first
terminal of one of said plurality of switch circuits, and having a
second terminal connected to the first terminal of another one of
said plurality of switch circuits, and when one of said plurality
of switch circuits and one of said plurality of second switch
circuits are turned on, the position on said interconnection layer
connected to said turned-on switch circuit is electrically coupled
to said second input/output terminal.
4. The oscillator circuit according to claim 1, wherein said
inductance-variable portion includes first and second input/output
terminals, a plurality of spiral interconnection layers starting
from said first input/output terminal, and formed on a
semiconductor substrate with an interlayer insulating film
therebetween, and said plurality of switch circuits connected
between trailing ends of said plurality of interconnection layers
and said second input/output terminal, respectively, and when one
of said plurality of switch circuits is turned on, the trailing end
of said interconnection layer included in said plurality of
interconnection layers and connected to said turned-on switch
circuit is electrically coupled to said second input/output
terminal.
5. The oscillator circuit according to claim 3, wherein said switch
circuit includes a transistor element to be turned on/off in
accordance with a voltage level of a control voltage.
6. The oscillator circuit according to claim 1, wherein said
capacitor element in said LC resonant circuit has a variable
capacitance value.
7. An oscillator circuit, comprising: a pair of transistors
cross-coupled to each other; and an LC resonant circuit of a
differential type coupled to said pair of transistors in a feedback
manner; wherein said LC resonant circuit includes first and second
inductance-variable portions including first and second
input/output terminals, said second input/output terminals being
commonly connected to a fixed node, and said first and second
inductance-variable portions being capable of varying inductances,
and a first switch circuit coupled between the first input/output
terminals of said first and second inductance-variable portions,
each of said first and second inductance-variable portions has a
spiral interconnection layer starting from said first input/output
terminal and formed on a semiconductor substrate with an interlayer
insulating film therebetween, and a plurality of second switch
circuits having first terminals connected to arbitrary positions on
said interconnection layer and second terminals commonly connected
to said second input/output terminal, respectively, when one of
said plurality of second switch circuits is turned on, the position
on said interconnection layer connected to said turned-on second
switch circuit is electrically coupled to said second input/output
terminal, and when said first switch circuit is turned on in
response to the turn-on of said second switch circuit, said first
switch circuit electrically couples said first and second
inductance-variable portions.
8. An oscillator circuit, comprising: a pair of transistors
cross-coupled to each other; and an LC resonant circuit of a
differential type coupled to said pair of transistors in a feedback
manner; wherein said LC resonant circuit includes first and second
inductance-variable portions including first and second
input/output terminals, said second input/output terminals being
commonly connected to a fixed node, and said first and second
inductance-variable portions being capable of varying inductances,
and a first switch circuit coupled between the first input/output
terminals of said first and second inductance-variable portions,
each of said first and second inductance-variable portions has a
plurality of spiral interconnection layers starting from said first
input/output terminal and formed on a semiconductor substrate with
an interlayer insulating film therebetween, and a plurality of
second switch circuits coupled between trailing ends of said
plurality of interconnection layers and said second input/output
terminal, respectively, when one of said plurality of second switch
circuits is turned on, the trailing end of said interconnection
layer included in said plurality of interconnection layers and
connected to said turned-on second switch circuit is electrically
coupled to said second input/output terminal, and when said first
switch circuit is turned on in response to the turn-on of said
second switch circuit, said first switch circuit electrically
couples said first and second inductance-variable portions.
9. The oscillator circuit according to claim 7, wherein said first
and second inductance-variable portions form a differential
inductor element.
10. The oscillator circuit according to claim 7, wherein each of
said first and second switch circuits includes a transistor element
to be turned on/off in accordance with a voltage level of a control
voltage.
11. The oscillator circuit according to claim 7, wherein said
capacitor element in said LC resonant circuit has a variable
capacitance value.
12. An L load differential circuit, comprising an inductor pair
including first and second inductance-variable portions having
second input/output terminals commonly connected to a fixed node
and being capable of varying inductances, and a first switch
circuit coupled between first input/output terminals of said first
and second inductance-variable portions, wherein each of said first
and second inductance-variable portions has a spiral
interconnection layer starting from said first input/output
terminal and formed on a semiconductor substrate with an interlayer
insulating film therebetween, and a plurality of second switch
circuits having first terminals connected to arbitrary positions on
said interconnection layer and second terminals commonly connected
to said second input/output terminal, respectively, when one of
said plurality of second switch circuits is turned on, the position
on said interconnection layer connected to said turned-on second
switch circuit is electrically coupled to said second input/output
terminal, and when said first switch circuit is turned on in
response to the turn-on of said second switch circuit, said first
switch circuit electrically couples said first and second
inductance-variable portions.
13. An L load differential circuit, comprising an inductor pair
including first and second inductance-variable portions having
second input/output terminals commonly connected to a fixed node
and being capable of varying inductances, and a first switch
circuit coupled between first input/output terminals of said first
and second inductance-variable portions, wherein each of said first
and second inductance-variable portions has a plurality of spiral
interconnection layers starting from said first input/output
terminal and formed on a semiconductor substrate with an interlayer
insulating film therebetween, and a plurality of second switch
circuits coupled between trailing ends of said plurality of
interconnection layers and said second input/output terminal,
respectively, when one of said plurality of second switch circuits
is turned on, the trailing end of said interconnection layer
included in said plurality of interconnection layers and connected
to said turned-on second switch circuit is electrically coupled to
said second input/output terminal, and when said first switch
circuit is turned on in response to said turn-on of said second
switch circuit, said first switch circuit electrically couples said
first and second inductance-variable portions.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to an oscillator circuit and
an L load differential circuit, and particularly to an oscillator
circuit using an LC resonant circuit as well as an L load
differential circuit mountable on the oscillator circuit.
[0003] 2. Description of the Background Art
[0004] In wireless devices such as a cellular phone, a local
oscillator circuit is used for frequency conversion of received
signals into low-frequency signals allowing demodulation and for
frequency conversion of send signals (i.e., signals to be sent)
into high-frequency signals, and is required to have a wide
oscillation frequency range and can lower noises (phase noises) at
and around an oscillation frequency.
[0005] A Voltage Control Oscillator (VCO), which is a kind of local
oscillator circuit, utilizes an oscillation phenomenon caused by
positive feedback of the circuit, and can control the oscillation
frequency by a control signal. In general, the VCO employs a
resonant circuit or utilizes a delay time of a circuit.
[0006] In connection with the VCO utilizing the resonant circuit, a
negative conductance LC oscillator circuit is known as an
oscillator circuit utilizing negative resistance characteristics of
a positive feedback circuit formed of transistors, as disclosed,
e.g., in A. Yamagishi et al., "A Low-Voltage 6-GHz-Band CMOS
Monolithic LC-Tank VCO Using a Tuning-Range Switching Technique",
IEICE Trans. Fundamentals, vol. E84-A, No. 2, February 2001. Since
this oscillator circuit uses the LC resonant circuit including an
inductor element and a capacitor element, it can achieve good phase
noise characteristics, and application to VCOs for portable
cordless devices has been expected.
[0007] A structure and an operation of a conventional VCO will now
be described in connection with, e.g., a negative conductance LC
oscillator circuit.
[0008] A conventional VCO is formed of an LC resonant circuit
formed of two inductor elements and two diode elements, and a
positive feedback circuit formed of two transistors each having a
gate connected to a drain of the other.
[0009] In this structure, an input impedance R.sub.in of the
positive feedback circuit is equal to -2/g.sub.m
(R.sub.in=-2/g.sub.m) where g.sub.m represents a mutual conductance
of each transistor. Therefore, the VCO oscillates when an absolute
value .vertline.R.sub.in.vertline. of the input impedance is equal
to or lower than an equivalent parallel resistance of the resonant
circuit. Assuming that inductances L1 and L2 of the two inductor
elements are both equal to L (i.e., L1=L2=L) and a variable
junction capacitance is equal to C.sub.var, an oscillation
frequency f.sub.osc is expressed by the following formula (1): 1 f
osc = 1 2 L C v ar ( 1 )
[0010] Accordingly, oscillation frequency f.sub.osc can be
controlled in accordance with junction capacitance C.sub.var varied
by the control voltage connected to the diode element.
[0011] An oscillation amplitude A.sub.osc of the VCO is expressed
by the following formula (2), and takes the value proportional to
oscillation frequency f.sub.osc.
A.sub.osc.varies.2.pi.f.sub.oscL (2)
[0012] When the LC resonant circuit included in the VCO having the
above differential structure is to be used for 1 to 2 GHz, an LC
type using a lumped constant is predominantly employed because it
can reduce an area of an integrated structure. A variable
capacitance (varactor diode) is predominantly used as the capacity
element. The inductor element is formed of a spiral inductance,
which is formed of a spiral interconnection and a leader
interconnection, and is generally formed on the same substrate as
the transistor elements.
[0013] Accordingly, the inductance of the inductor element is
uniquely determined in accordance with the form of the spiral, and
cannot be adjusted unless a mask design is changed.
[0014] Meanwhile, the transistor elements formed on the same
substrate do not necessarily exhibit designed characteristics due
to variations in manufacturing steps. Therefore, inductance
mismatching occurs between the inductor elements, which reduces
yield.
[0015] Recently, many kinds of inductance-variable elements, of
which inductance can be varied even after the inductor elements are
assembled in circuits, have been proposed, e.g., in Japanese Patent
Laying-Open Nos. 7-142258 and 8-162331.
[0016] For example, the inductance-variable element disclosed in
Japanese Patent Laying-Open No. 7-142258 includes a spiral
electrode formed on a semiconductor substrate with an insulating
film therebetween and switch circuits for short-circuiting various
turn portions of the spiral electrode.
[0017] In this structure, when the switch circuit is turned on in
response to a predetermined applied voltage, the corresponding turn
portion of the spiral electrode is locally short-circuited. This
changes the number of turns of the inductance-variable element so
that the inductance-variable element changes its inductance as a
whole.
[0018] As already described, oscillation frequency f.sub.osc in the
conventional VCO is controlled by variable capacitance C.sub.var.
However, the equivalent parallel resistance of the LC resonant
circuit lowers with increase in variable capacitance C.sub.var.
Therefore, VCO may deviate from an oscillation state if the
capacitance value is high. Accordingly, it is difficult to achieve
a wide oscillation frequency range.
[0019] Further, oscillation amplitude A.sub.osc of the VCO is
proportional to oscillation frequency f.sub.osc. In a low frequency
range, therefore, oscillation amplitude A.sub.osc is low, and a
signal-to-noise ratio of the oscillation signal is low so that the
phase noise characteristics are impaired.
[0020] The foregoing inductance-variable element suffers from such
a problem that the Q value lowers due to an on-resistance of a
switch circuit connected in series to the inductor element. This
results in deterioration of the phase noise characteristics of the
oscillator circuit formed of the inductor element.
SUMMARY OF THE INVENTION
[0021] An object of the invention is to provide an oscillator
circuit having a wide oscillation frequency range and
characteristics achieving low phase noises.
[0022] Another object of the invention is to provide an L load
differential circuit, which is mounted on the oscillator circuit,
and achieves the above performance.
[0023] According to an aspect of the invention, an oscillator
circuit performs oscillation by positive feedback of an LC resonant
circuit, and the LC resonant circuit includes a parallel resonant
circuit that is formed of an inductance-variable portion allowing
variation of an inductance by a switch circuit and a capacitor
element.
[0024] According to another aspect of the invention, an oscillator
circuit is formed of a pair of transistors cross-coupled to each
other, and an LC resonant circuit of a differential type coupled to
the pair of transistors in a feedback manner. The LC resonant
circuit includes first and second inductance-variable portions
including first and second input/output terminals, commonly
connected at their second terminals to a fixed node and being
capable of varying inductances, and a first switch circuit coupled
between the first input/output terminals of the first and second
inductance-variable portions. Each of the first and second
inductance-variable portions has a spiral interconnection layer
starting from the first input/output terminal and formed on a
semiconductor substrate with an interlayer insulating film
therebetween, and a plurality of second switch circuits having
first terminals connected to arbitrary positions on the
interconnection layer and second terminals commonly connected to
the second input/output terminal, respectively. When one of the
second switch circuits is turned on, the oscillator circuit
electrically couples the connection position of the turned-on
second switch circuit on the interconnection layer to the second
input/output terminal. When the first switch circuit is turned on
in response to the turn-on of the second switch circuit, the first
switch circuit electrically couples the first and second
inductance-variable portions.
[0025] According to the invention described above, since the
oscillation frequency of the oscillator circuit is controlled by
varying the inductance of the LC resonant circuit, it is possible
to achieve the oscillator circuit, which can prevent deterioration
of the phase noise characteristics in a low oscillation frequency
range, and can achieve a wide oscillation frequency range and
characteristics ensuring low phase noises.
[0026] Further, the two inductance-variable portions included in
the differential LC resonant circuit are electrically coupled to
form an inductor pair by the switch circuit arranged between the
inductance-variable portions. Thereby, it is possible to suppress
deterioration of a Q value of the resonant circuit, and the voltage
control oscillator circuit can have characteristics ensuring low
phase noises. If the differential LC resonant circuit is configured
not to connect a capacitor element thereto, it can be used as an L
load differential circuit having a high Q value and a variable
inductance.
[0027] The foregoing and other objects, features, aspects and
advantages of the present invention will become more apparent from
the following detailed description of the present invention when
taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] FIG. 1 shows by way of example an oscillator circuit
according to a first embodiment of the invention.
[0029] FIG. 2 schematically shows by way of example a structure of
an inductance-variable portion.
[0030] FIG. 3 shows by way of example a structure of a switch
circuit.
[0031] FIG. 4 is an equivalent circuit diagram of the
inductance-variable portion in FIG. 2.
[0032] FIG. 5 shows a circuit structure of the voltage control
oscillator circuit in FIG. 1 having inductance-variable portions
Lvar1 and Lvar2 each formed of the inductance-variable portion
shown in FIGS. 2 to 4.
[0033] FIG. 6 schematically shows a structure of a first
modification of the inductance-variable portion in FIGS. 2 and
4.
[0034] FIGS. 7 to 9 are circuit diagrams showing structures of
second, third and fourth modifications of the inductance-variable
portion shown in FIGS. 2 and 4, respectively.
[0035] FIG. 10 is a circuit diagram showing by way of example a
structure of an oscillator circuit according to a second embodiment
of the invention.
[0036] FIG. 11 is a circuit diagram showing by way of example a
structure of an oscillator circuit according to a third embodiment
of the invention.
[0037] FIG. 12 is a circuit diagram schematically showing a
structure of a switch circuit group 1 in a voltage control
oscillator circuit in FIG. 11.
[0038] FIG. 13 is an equivalent circuit diagram of switch circuit
group 1 in FIG. 12.
[0039] FIG. 14 is an equivalent circuit diagram of switch circuit
group 1 changed from .DELTA.-connection to Y-connection shown in
FIG. 13.
[0040] FIG. 15 shows a specific layout structure of
inductance-variable portions Lvar1 and Lvar2 shown in FIG. 11.
[0041] FIG. 16 is a circuit diagram showing by way of example a
structure of an oscillator circuit according to a modification of
the third embodiment of the invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0042] Embodiments of the invention will now be described with
reference to the drawings. In the figures, the same reference
numbers indicate the same or corresponding portions.
[0043] [First Embodiment]
[0044] FIG. 1 shows a structure of an oscillator circuit according
to a first embodiment of the invention. In the following
description of the embodiment, a voltage control oscillator circuit
will be described as an example of the oscillator circuit.
[0045] Referring to FIG. 1, a voltage control oscillator circuit is
formed of a differential type LC resonant circuit, which is formed
of inductance-variable portions Lvar1 and Lvar2 having variable
inductances and a capacitor element C1, and a positive feedback
circuit formed of N-channel MOS transistors M1 and M2.
[0046] Each of inductance-variable portions Lvar1 and Lvar2 has
first and second input/output terminals, and the second
input/output terminal is commonly connected to an external power
supply node Vdd. The first input/output terminals are connected to
output nodes OUT and OUTB, respectively. Capacitor element C1 is
connected between the first input/output terminals of
inductance-variable portions Lvar1 and Lvar2. An oscillation
frequency f.sub.osc of the voltage control oscillator circuit can
be determined based on the inductance values of the
inductance-variable portions and the capacitance value.
[0047] The positive feedback circuit includes N-channel MOS
transistor M1 electrically coupled between inductance-variable
portion Lvar1 and a constant current supply Ibias, and N-channel
MOS transistor M2 electrically coupled between inductance-variable
portion Lvar2 and constant current supply Ibias.
[0048] N-channel MOS transistors M1 and M2 have gates each coupled
to a drain of the other, and thus provide a cross-coupled
structure.
[0049] An operation of the voltage control oscillator circuit shown
in FIG. 1 will now be described.
[0050] Referring to FIG. 1, since the positive feedback circuit of
the voltage control oscillator circuit can be deemed as a
two-terminal circuit, an input impedance R.sub.in viewed from the
drains of N-channel MOS transistors M1 and M2 can be expressed as
R.sub.in=-2/g.sub.m, where g.sub.m is a mutual conductance of each
N-channel MOS transistor. Therefore, this circuit oscillates when
an absolute value .vertline.R.sub.in.vertline. of input impedance
R.sub.in is equal to or lower than a value of an equivalent
parallel resistance of the LC resonant circuit. This circuit may be
referred to as a "negative conductance LC oscillator circuit".
[0051] When the circuit satisfies the foregoing oscillation
conditions, oscillation frequency f.sub.osc is expressed by the
following formula (3), where L indicates an inductance value of
inductance-variable portions Lvar1 and Lvar2, and C.sub.1 indicates
a capacitance value of capacitor element C1. Parasitic capacitances
of the respective passive elements, interconnections and others are
ignored. 2 f osc = 1 2 L C 1 ( 3 )
[0052] An oscillation amplitude A.sub.osc is expressed by the
following formula (4):
A.sub.osc.varies.2.pi.f.sub.oscL (4)
[0053] As can be seen from the formula (3), oscillation frequency
f.sub.osc changes in accordance with inductance value L. For
example, oscillation frequency f.sub.osc lowers with increase in
inductance value L. In this case, since oscillation frequency
f.sub.osc is lowered in accordance with increase in inductance
value L, deterioration of oscillation amplitude A.sub.osc expressed
in FIG. (4) is prevented. Therefore, it is possible to avoid
deterioration of the phase noise characteristics, which occurs due
to lowering of the oscillation amplitude in a conventional VCO when
the oscillation frequency is in a low range.
[0054] Then, description will be given on a specific example of the
structures of inductance-variable portions Lvar1 and Lvar2 forming
the LC resonant circuit in the voltage control oscillator circuit
shown in FIG. 1.
[0055] FIG. 2 schematically shows by of example a structure of
inductance-variable portions Lvar1 and Lvar2. Since
inductance-variable portions Lvar1 and Lvar2 have the same
structure, FIG. 2 representatively shows only inductance-variable
portion Lvar1.
[0056] Referring to FIG. 2, inductance-variable portion Lvar1
includes a spiral interconnection layer formed on a semiconductor
substrate (not shown) with an interlayer insulating film
therebetween, and switch circuits SW1-SW3.
[0057] The spiral interconnection layer is made of a metal material
such as aluminum or copper, and the configuration thereof is not
restricted to a square, and may be another form such as a polygon
or a circle.
[0058] Switch circuits SW1-SW3 have first terminals, which are
connected to respective turns of the spiral interconnection layer,
and second terminals connected to an input/output terminal of the
inductor element. Switch circuits SW1-SW3 receive control signals
for controlling the turning-on/off thereof.
[0059] FIG. 3 shows by way of example a structure of switch
circuits SW1-SW3.
[0060] Referring to FIG. 3, switch circuit SWn (n=1, 2 or 3) may be
formed of an N-channel MOS transistor 10. When N-channel MOS
transistor 10 is supplied with a control voltage Vsw as a control
signal Sn on its gate, it is turned on or off depending on the
voltage level of control voltage Vsw. When control voltage Vsw is
at a H-level (high potential level), N-channel MOS transistor 10 is
turned on so that the corresponding portion of the spiral
interconnection layer is electrically coupled to the input/output
terminal of the inductor element. When control voltage Vsw is at a
L-level (low potential level), N-channel MOS transistor 10 is
turned off. Thereby, the corresponding portion of the spiral
interconnection layer is electrically isolated from the
input/output terminal of the inductor element.
[0061] Accordingly, one of the switch circuits is selected to
receive control voltage Vsw at the H-level, and the other switch
circuits are supplied with control voltage Vsw at L-level so that
an intended inductance value can be obtained.
[0062] In the inductance-variable portion of the structure shown in
FIG. 2, since switch circuits SW1-SW3 are provided for the
respective turns of the spiral interconnection layer, discrete
inductance values can be obtained.
[0063] In FIG. 3, the N-channel MOS transistor is used as the
switch circuit. However, a bipolar transistor or a GaAs MESFET
(Metal Semiconductor Field-Effect Transistor) may be used instead
of the N-channel MOS transistor.
[0064] FIG. 4 is an equivalent circuit diagram of
inductance-variable portion Lvar1 in FIG. 2.
[0065] Referring to FIG. 4, the inductance-variable portion is
divided into three inductor elements L1, L2 and L3 by switch
circuits SW1-SW3 arranged for the respective turns. It is assumed
that inductor elements L1, L2 and L3 have inductance values of L1,
L2 and L3, respectively.
[0066] For example, when switch circuit SW1 is on, the whole
inductor elements have the inductance value of L1. When switch
circuit SW2 is on, the whole inductor elements have the inductance
value of (L1+L2). In this manner, one of switch circuits SW1-SW3 is
turned on so that the inductance can selectively take the discrete
values within a variable range from L1 to (L1+L2+L3).
[0067] FIG. 5 shows a circuit structure, in which each of
inductance-variable portions Lvar1 and Lvar2 in the voltage control
oscillator circuit shown in FIG. 1 employs the inductance-variable
portion shown in FIGS. 2 to 4.
[0068] In the voltage control oscillator circuit in FIG. 5,
inductance-variable portions Lvar1 and Lvar2 in the LC resonant
circuit shown in FIG. 1 are expressed as the equivalent circuits
shown in FIG. 4, and switch circuits SW1-SW3 and SW1d-SW3d are
arranged for the respective turns. Capacitor element C1 in the LC
resonant circuit and the circuit structure of the positive feedback
circuit are similar to those of the VCO in FIG. 1, and therefore,
description thereof is not repeated.
[0069] Switch circuits SW1 and SW1d form one switch circuit group.
Likewise, switch circuits SW2 and SW2d form one switch circuit
group, and switch circuits SW3 and SW3d form one switch circuit
group.
[0070] In this structure, one switch circuit group is selected from
the three switch circuit groups, and switch circuits SWn and SWnd
in the selected group are turned on. The switch circuits in the
other switch circuit groups are kept off. For example, when switch
circuits SW1 and SW1d are turned on, each of inductance-variable
portions Lvar1 and Lvar2 takes the inductance value of L1. Thus, by
turning on one of the switch circuit groups, the inductance of the
inductance-variable portion can be discretely varied within the
variable range from L1 to (L1+L2+L3), as already described. As a
result, the variable range of oscillation frequency f.sub.osc of
the voltage control oscillator circuit can be expressed by the
following formula (5): 3 1 2 ( L 1 + L 2 + L 3 ) C f osc 1 2 L 1 C
( 5 )
[0071] Even in the low frequency range within the variable
oscillation frequency range, oscillation amplitude A.sub.osc does
not deteriorate owing to increase in inductance L so that
deterioration of phase noises does not occur.
[0072] Therefore, the first embodiment of the invention can achieve
the voltage control oscillator circuit having a wide oscillation
frequency range and low-phase-noise characteristics, i.e.,
characteristics ensuring low phase noises.
[0073] [Modification of First Embodiment]
[0074] As described above, the oscillator circuit of the first
embodiment includes the LC resonant circuit employing the
inductance-variable portion for improving the trade-off
relationship between the variable oscillation frequency range and
the phase noise characteristics. The inductance-variable portion
can easily provide various inductance values by switching the
plurality of switch circuits provided for the spiral
interconnection layer of the inductor element. A modification of
the structure of the inductance-variable portion will now be
described.
[0075] FIG. 6 schematically shows a structure of a first
modification of inductance-variable portion Lvar1 shown in FIGS. 2
and 4. Inductance-variable portion Lvar2 has the sane structure as
inductance-variable portion Lvar1, and therefore description
thereof is not repeated.
[0076] Referring to FIG. 6, inductance-variable portion Lvar1
includes switch circuits SW1-SW4 arranged for quarters of the turn
of the spiral interconnection layer, respectively, and thus has a
structure achieved by adding a switch circuit to the inductor
element in FIGS. 2 and 4.
[0077] In this structure, an intended inductance can be likewise
achieved by turning on one of switch circuits SW1-SW4. Further, by
increasing the number of the switch circuits, it is possible to
widen the variable range of the inductance value and to perform the
control more finely.
[0078] Therefore, by mounting the inductance varying portion in
FIG. 6 on the LC resonant circuit of the voltage control oscillator
circuit shown in FIG. 1, it is possible to widen the variable range
of oscillator frequency f.sub.osc and to perform the control more
finely. The number of the switch circuits and the positions of
connection to the spiral interconnection layer are not restricted
to those of this embodiment, and can be arbitrarily changed so that
an intended oscillation frequency can be achieved.
[0079] Further, lowering of oscillation amplitude A.sub.osc can be
suppressed owing to a large inductance even in the low frequency
range within the variable frequency range, and therefore
deterioration of the phase noise characteristics can be
avoided.
[0080] [Second Modification of the First Embodiment]
[0081] FIG. 7 is an equivalent circuit diagram showing a structure
of a second modification of inductance-variable portion Lvar1 shown
in FIGS. 2 and 4.
[0082] Referring to FIG. 7, inductance-variable portion Lvar1
includes switch circuits SW4 and SW5 in addition to switch circuits
SW1-SW3 arranged for respective turns in the equivalent circuit of
the inductance-variable portion shown in FIG. 4.
[0083] Switch circuit SW4 is arranged between input/output
terminals 1 and 2, and is connected in parallel with inductor
elements L1-L3. Switch circuit SW5 is arranged between input/output
terminal 1 and the terminal of switch circuit SW2, and is connected
in parallel with inductor elements L1 and L2.
[0084] In this structure, switch circuits SW1-SW5 are selectively
turned on so that the inductance can be varied more finely in
stepwise fashion. For example, when only switch circuit SW1 is
turned on, the inductance value of L1 is achieved. When only switch
circuit SW2 is turned on, the inductance value is equal to (L1+L2).
Likewise, when switch circuit SW3 is turned on, the inductance
value is equal to (L1+L2+L3).
[0085] When switch circuits SW4 and SW5 are turned on, the
inductance value is substantially equal to zero. When switch
circuits SW5 and SW3 are turned on, the inductance value is equal
to L3.
[0086] As described above, the inductance can be finely varied by
variously combining the on and off states of the plurality of
switch circuits. Therefore, by employing the inductance-variable
portion in FIG. 7 in the LC resonant circuit of the voltage control
oscillator circuit shown in FIG. 1, it is possible to widen the
variable frequency range of oscillation frequency f.sub.osc and to
perform the control more finely.
[0087] [Third Modification of the First Embodiment]
[0088] FIG. 8 shows a structure of a third modification of
inductance-variable portion Lvar1 shown in FIGS. 2 and 4.
[0089] Referring to FIG. 8, inductance-variable portion Lvar1
includes switch circuits SW4-SW9 in addition to switch circuits
SW1-SW3 provided for the respective turns in the equivalent circuit
of the inductor element shown in FIG. 2.
[0090] Switch circuits SW4-SW6 are connected in parallel with
inductor elements L1-L3, respectively. Switch circuit SW7 is
connected between one end of inductor element L2 and one end of
inductor element L3, and is arranged in parallel with inductor
elements L2 and L3. Switch circuit SW8 is connected between one end
of inductor element L1 and one end of inductor element L2, and is
arranged in parallel with inductor elements L1 and L2. Switch
circuit SW9 is connected between one end of inductor element L1 and
one end of inductor element L3, and is arranged in parallel with
inductor elements L1, L2 and L3.
[0091] In this structure, switch circuits SW1-SW9 are selectively
turned on so that the inductance can be controlled more finely that
the inductance-variable portion shown in FIGS. 2 and 7.
[0092] For example, when switch circuits SW2 and SW4 are turned on,
the inductance value of L2 is obtained. When switch circuits SW3
and SW8 are turned on, the inductance value of L3 is obtained. When
switch circuits SW3 and SW4 are turned on, the inductance value of
(L2+L3) is obtained.
[0093] As described above, the inductance can be determined more
finely in the variation range by combining the on/off states of the
plurality of switch circuits. Therefore, by employing the
inductance-variable portion shown in FIG. 8 in the LC resonant
circuit of the voltage control oscillator circuit in FIG. 1, it is
possible to widen the variable frequency range of oscillation
frequency f.sub.osc, and the control can be performed more
finely.
[0094] [Fourth Modification of the First Embodiment]
[0095] FIG. 9 is a circuit diagram showing a structure of a fourth
modification of inductance-variable portion Lvar1 shown in FIG.
2.
[0096] Referring to FIG. 9, inductance-variable portion Lvar1
includes a plurality of inductor elements L1-L3 having different
inductances, respectively, and switch circuits SW1-SW3 each coupled
between one end of the spiral interconnection layer (not shown) of
corresponding inductor element L1, L2 or L3 and the input/output
terminal.
[0097] The inductance-variable portion in FIG. 2 has the plurality
of switch circuits arranged for the one spiral interconnection
layer. In contrast to this, the inductor element shown in FIG. 9
includes the switch circuits provided for the respective spiral
interconnection layers in a one-to-one relationship. In the
inductance-variable portion shown in FIG. 9, therefore, the
inductance can be varied by turning on only the switch circuit,
which corresponds to the inductor element having an intended
inductance.
[0098] According to the inductance-variable portion having the
above structure, the plurality of spiral interconnection layers are
arranged in parallel, and therefore the circuit scale is large.
However, the switch circuit per one inductor element is small in
number so that the circuit structure can be simple.
[0099] [Second Embodiment]
[0100] FIG. 10 shows by way of example an oscillator circuit
according to a second embodiment of the invention. Similarly to the
first embodiment, a voltage control oscillator circuit will be
described as an example of the oscillator circuit.
[0101] Referring to FIG. 10, the voltage control oscillator circuit
differs from the voltage control oscillator circuit shown in FIG. 1
only in that the capacitor element forming the LC resonant circuit
has a variable capacitance. Description of the same or
corresponding portions is not repeated.
[0102] The LC resonant circuit is formed of inductance-variable
portions Lvar1 and Lvar2 each connected between external power
supply node Vdd and output node OUT or OUTB, and a variable
capacitor element Cvar connected between first input/output
terminals of inductor elements Lvar1 and Lvar2. In the following
description, it is assumed that each passive element has an
inductance of L and a capacitance value of C.
[0103] In this structure, oscillation frequency f.sub.osc of the
voltage control oscillator circuit is expressed by the following
formula (6), in which parasitic capacitances and others of each
passive element, interconnection and others are ignored. 4 f osc =
1 2 L C ( 6 )
[0104] Oscillation amplitude A.sub.osc is expressed by the
following formula (7).
A.sub.osc.varies.2.pi.f.sub.osc.multidot.L (7)
[0105] As can be seen from the formula (6), oscillation frequency
f.sub.osc depends on a combination of two variables, i.e.,
inductance L and capacitance value C. Therefore, the variable range
of the oscillation frequency can be wider than that in the voltage
control oscillator circuit of the first embodiment, in which only
the inductance is variable.
[0106] Since the oscillation frequency can be lowered by increasing
inductance L similarly to the first embodiment, deterioration of
oscillation amplitude A.sub.osc can be suppressed even in the low
oscillation frequency range. Thereby, deterioration of the phase
noise characteristics at the low oscillation frequencies can be
suppressed so that the trade-off relationship between the variable
range of the oscillation frequency and the phase noises can be
improved.
[0107] [Third Embodiment]
[0108] FIG. 11 shows a structure of an oscillator circuit according
to a third embodiment of the invention. A voltage control
oscillator circuit will now be described as an example of an
oscillator circuit.
[0109] Referring to FIG. 11, the voltage control oscillator circuit
includes switch circuits SW1dd-SW3dd arranged between
inductance-variable portions Lvar1 and Lvar2 of the differential LC
resonant circuit, in addition to the components of the voltage
control oscillator circuit of the first embodiment shown in FIG. 5.
Description of the same or corresponding portions is not
repeated.
[0110] Inductance-variable portions Lvar1 and Lvar2 include switch
circuits SW1-SW3 or SW1d-SW3d arranged corresponding to the
respective turns, similarly to inductance-variable portion Lvar1
shown in FIG. 2.
[0111] Further, a switch circuit SW1dd is arranged between switch
circuits SW1 and SW1d. A switch circuit SW2dd is arranged between
switch circuits SW2 and SW2d. A switch circuit SW3dd is arranged
between switch circuits SW3 and SW3d. Switch circuits SW1, SW1d and
SW1dd form one switch circuit group 1, switch circuits SW2, SW2d
and SW2dd form a switch circuit group 2, and switch circuits SW3,
SW3d and SW3dd form one switch circuit group 3.
[0112] By selecting one of switch circuit groups 1-3, switch
circuits SWn, SWnd and SWndd (n=1, 2 or 3) forming the selected
switch circuit group are all turned on. Consequently,
inductance-variable portions Lvar1 and Lvar2 are electrically
coupled to form an inductor pair.
[0113] FIG. 12 schematically shows a structure of switch circuit
group 1, 2 or 3 in the voltage control oscillator circuit shown in
FIG. 11. Since the switch circuit groups 1-3 have the same
structure, the structure of switch circuit group 1 will now be
representatively described.
[0114] As shown in FIG. 12, switch circuits SW1 and SW1d are
connected in parallel between external power supply node Vdd and
inductor element L1. Further, switch circuit SW1dd is coupled
between switch circuits SW1 and SW1d.
[0115] Effects by switch circuits SW1dd-SW3dd are as follows.
[0116] In the voltage control oscillator circuit shown in FIG. 11,
one of the switch circuit groups is selected and turned on. For
example, when switch circuit group 1 is selected, switch circuits
SW1, SW1d and SW1dd are turned on. Thereby, the inductance equal to
L1 is set in each of inductance-variable portions Lvar1 and Lvar2
arranged between external power supply node Vdd and respective
output nodes OUT and OUTB.
[0117] Further, inductance-variable portions Lvar1 and Lvar2 are in
the state, where these portions are electrically coupled via switch
circuit SW1dd. An equivalent circuit of only switch circuit group 1
in this state is shown in FIG. 13. A resistance element R is an
on-resistance of each switch circuit.
[0118] In the equivalent circuit formed of three resistance
elements R shown in FIG. 13, .DELTA.-connection of resistance
elements R may be changed into Y-connection, whereby switch circuit
group 1 changes into an equivalent circuit shown in FIG. 14. As
shown in FIG. 14, each of the three resistance elements forming the
equivalent circuit has a resistance value of R/3. Therefore, a
resistance component, which is connected in series to each of the
inductor elements included in inductance-variable portions Lvar1
and Lvar2 in FIG. 11, has a resistance value of R/3.
[0119] Meanwhile, in each of the inductance-variable portions of
the voltage control oscillator circuit shown in FIG. 5, a
resistance component connected in series to the inductor element
has the resistance value of R equal to the on-resistance of switch
circuits SW1-SW3 and SW1d-SW3d. Thus, interposition of switch
circuits SW1dd-SW3dd reduces the resistance values of resistance
components to 1/3.
[0120] The Q value of the LC resonant circuit has such
characteristics that the Q value of the LC resonant circuit rises
with decrease in resistance component connected in series to the
inductor element, and lowers with increase in resistance component.
Therefore, the resonant circuit in the voltage control oscillator
circuit of this embodiment can have a higher Q value than the LC
resonant circuit in FIG. 5 owing to the reduction in resistance
component by switch circuits SW1dd-SW3dd. This results in
low-phase-noise characteristics of the voltage control
oscillator.
[0121] The differential LC resonant circuit thus constructed can be
applied not only to the voltage control oscillator circuit of this
embodiment, but also can be applied to an RF circuit such as a
differential amplifier and a mixer, which has a differential LC
resonant circuit as a load for achieving high-gain characteristics
and low-noise characteristics owing to a high Q value. Without
connecting a capacitor element, the circuit may be used merely as
an L load differential circuit in the RF circuit or the like, in
which case a circuit having a variable gain can be achieved owing
to the feature that the inductance value is variable.
[0122] FIG. 15 shows a specific layout structure of
inductance-variable portions Lvar1 and Lvar2 in the differential LC
resonant circuit included in the voltage control oscillator circuit
shown in FIG. 11.
[0123] Referring to FIG. 15, inductance-variable portions Lvar1 and
Lvar2 form a differential inductance including a combination of two
spiral interconnection layers. Input/output terminal 1 common to
the two inductance-variable portions is connected to external power
supply node Vdd (not shown in FIG. 15). Other input/output
terminals 2 and 3 of the inductance-variable portions are connected
to output nodes OUT and OUTB of the voltage control oscillator
circuit (not shown in FIG. 15), respectively.
[0124] By providing the two inductance-variable portions formed of
the differential type inductors as shown in FIG. 15, switch
circuits SW1dd-SW3dd can be interposed without increasing the
circuit scale, and thus the structure can be compact.
[0125] According to the third embodiment of the invention, as
described above, the two inductance-variable portions are
electrically coupled by the switch circuits arranged therebetween
to form the one inductor pair, and thereby the resistance component
connected in series to the inductor element can be reduced so that
deterioration of the Q value of the differential LC resonant
circuit can be suppressed, and the voltage control oscillator
circuit can have the characteristics ensuring low phase noises.
[0126] In the differential LC resonant circuit, the inductor pair
is formed of the differential type inductors. Thereby, it is
possible to suppress increase in circuit scale, which may be caused
by interposition of the switch circuits, and the voltage control
oscillator circuit can be compact in layout.
[0127] [Modification of the Third Embodiment]
[0128] FIG. 16 is a circuit diagram showing a structure of a
voltage control oscillator circuit, which is an oscillator circuit
according to a modification of the third embodiment of the
invention.
[0129] Referring to FIG. 16, the voltage control oscillator circuit
differs from the voltage control oscillator circuit shown in FIG.
11 in that the inductor pair included in the differential LC
resonant circuit is formed of inductance-variable portions Lvar1
and Lvar2, each of which is formed of a plurality of inductor
elements, and switch circuits SW1dd-SW3dd. Therefore, description
of the portions corresponding to those of the voltage control
oscillator circuit in FIG. 11 is not repeated.
[0130] The inductor pair is formed of two inductance-variable
portions Lvar1 and Lvar2, which are arranged in parallel and are
connected to external power supply node Vdd, and switch circuits
SW1dd-SW3dd arranged between inductance-variable portions Lvar1 and
Lvar2.
[0131] Inductance-variable portions Lvar1 and Lvar2 have the same
structures as those shown in FIG. 9. Inductance-variable portion
Lvar1 includes a plurality of inductor elements L1-L3, which are
connected in parallel between external power supply node Vdd and
output node OUT of the voltage control oscillator circuit, and have
different inductances, respectively. Also, inductance-variable
portion Lvar1 includes switch circuits SW1-SW3 coupled between
respective inductor elements L1-L3 and external power supply node
Vdd. Likewise, inductance-variable portion Lvar2 includes a
plurality of inductor elements L1-L3, which are connected in
parallel between external power supply node Vdd and output node
OUTB of the voltage control oscillator circuit, and have different
inductances, respectively, and switch circuits SW1d-SW3d coupled
between respective inductor elements L1-L3 and external power
supply node Vdd.
[0132] In this structure, an intended inductance can be achieved in
each of inductance-variable portions Lvar1 and Lvar2 by turning on
one of the plurality of switch circuits SW1-SW3 or SW1d-SW3d.
[0133] At the same time as the turn-on of switch circuits SWn and
SWnd, corresponding one of switch circuits SW1dd-SW3dd arranged
between the inductance-variable portions is turned on to form the
inductor pair. Therefore, a resistance component, which is
connected in series to each of the inductor elements, is reduced to
R/3, as is done in the third embodiment. Thereby, a high Q value is
achieved in the differential LC resonant circuit so that the
voltage control oscillator circuit can have the characteristics
ensuring the low-phase noises.
[0134] Similarly to the third embodiment, the differential LC
resonant circuit thus constructed can also be applied to an RF
circuit such as a differential amplifier and a mixer, and thereby
high-gain characteristics and low-noise characteristics can be
achieved owing to the high Q value. Without connecting the
capacitor element, the circuit may be used merely as an L load
differential circuit in the RF circuit or the like, in which case a
circuit having a variable gain can be achieved owing to the feature
that the inductance value is variable.
[0135] As already described in connection with the first to third
embodiments, the oscillator circuit according to the invention can
improve the trade-off relationship between the variable frequency
range and the phase noise characteristics owing to the LC resonant
circuit, which is configured to perform the control by the switch
circuits arranged corresponding to the portions of the spiral
interconnection layer, and thereby to provide the variable
inductance values for controlling the oscillation frequency.
[0136] Further, according to the third embodiment, the differential
LC resonant circuit includes the two inductance-variable portions,
which are electrically coupled via the switch circuits to provide
the inductor pair. Thereby, the resistance element connected in
series to the inductor element is reduced, and the high Q value can
be achieved. By arranging the resonant circuit thus constructed in
the voltage control oscillator circuit, low-phase-noise
characteristics can be achieved.
[0137] Since the insertion loss caused by the switch circuits still
exerts a large influence on the Q value of the resonant circuit and
the phase noise characteristics of the voltage control oscillator
circuit, it is desired to lower further the insertion loss.
[0138] Accordingly, the switch circuit may be formed of a
transistor such as a Depletion-layer-Extended Transistor (which may
be referred to as a "DTE", hereinafter) capable of reducing an
insertion loss, whereby the phase noise characteristics can be
further improved.
[0139] The DTE has an element structure, which can be formed by
removing a P-type well, P.sup.+-isolation layer and a punch-through
stopper layer from a conventional CMOS transistor, and achieves a
low junction capacitance of source/drain electrodes and a high
ground resistance so that a low insertion loss can be achieved.
Specific element structures of the DTE are disclosed, e.g., in "A
1.4 dB Insertion-Loss, 5 GHz Transmit/Receive Switch Utilizing
Novel Depletion-Layer-Extended Transistors (DETs) in 0.18 .mu.m
CMOS Process", T. Ohnakado, et al., IEEE Symposium on VLSI
Technology Digest of Tech. Papers, 16.4, June 2002.
[0140] Although the present invention has been described and
illustrated in detail, it is clearly understood that the same is by
way of illustration and example only and is not to be taken by way
of limitation, the spirit and scope of the present invention being
limited only by the terms of the appended claims.
* * * * *