U.S. patent application number 10/684506 was filed with the patent office on 2004-04-29 for processing tool, method of producing processing tool, processing method and processing apparatus.
Invention is credited to Enomoto, Toshiyuki, Inoue, Shigeru, Tani, Yasuhiro.
Application Number | 20040082278 10/684506 |
Document ID | / |
Family ID | 30449463 |
Filed Date | 2004-04-29 |
United States Patent
Application |
20040082278 |
Kind Code |
A1 |
Enomoto, Toshiyuki ; et
al. |
April 29, 2004 |
Processing tool, method of producing processing tool, processing
method and processing apparatus
Abstract
A processing tool is used to carry out a fixed-abrasive grinding
process on a surface of a silicon work-piece. The processing tool
includes abrasive grains made up silica grains. A primary average
grain size of the silica grains is desirably 0.8 nm to 10
.mu.m.
Inventors: |
Enomoto, Toshiyuki; (Tokyo,
JP) ; Tani, Yasuhiro; (Tokyo, JP) ; Inoue,
Shigeru; (Kanagawa, JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Family ID: |
30449463 |
Appl. No.: |
10/684506 |
Filed: |
October 15, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10684506 |
Oct 15, 2003 |
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09639239 |
Aug 16, 2000 |
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6685539 |
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Current U.S.
Class: |
451/41 |
Current CPC
Class: |
B24B 21/04 20130101;
H01L 21/304 20130101; B24B 21/002 20130101; B24B 7/228 20130101;
B24B 9/065 20130101; B24D 3/00 20130101; B24D 3/34 20130101 |
Class at
Publication: |
451/041 |
International
Class: |
B24B 001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 24, 1999 |
JP |
11-237467 |
Sep 14, 1999 |
JP |
11-260799 |
Sep 30, 1999 |
JP |
11-278608 |
Oct 28, 1999 |
JP |
11-306335 |
Claims
What is claimed is:
1. A processing tool for carrying out a fixed-abrasive grinding
process on a surface of a silicon work-piece, comprising: abrasive
grains made up silica grains.
2. The silicon processing tool as claimed in claim 1, wherein a
primary average grain size of the silica grains is 0.8 nm to 10
.mu.m.
3. The processing tool as claimed in claim 1, wherein a content of
the silica grains in the abrasive grains is 10 to 70 volume
percent.
4. The processing tool as claimed in claim 1, further comprising: a
binder bonding the abrasive grains, said binder being made of a
material which generates no endothermic reaction during the process
carried out on the silicon work-piece.
5. The processing tool as claimed in claim 1, further comprising:
an additive mixed to the abrasive grains, said additive being made
of a material which generates no endothermic reaction during the
process carried out on the silicon work-piece.
6. The processing tool as claimed in claim 1, wherein the abrasive
grains form a grindstone.
7. The processing tool as claimed in claim 1, wherein the abrasive
grains form a film.
8. The processing tool as claimed in claim 7, wherein the film is
flexible.
9. A method of producing a processing tool having abrasive grains
for carrying out a fixed-abrasive grinding process on a surface of
a silicon work-piece, said method comprising the step of: (a)
mixing a binder and silica grains to form a mixture; and (b)
forming the mixture into the abrasive grains of the processing
tool.
10. The method of producing the processing tool as claimed in claim
9, wherein said step (a) uses silica grains having a primary
average grain size of 0.8 nm to 10 .mu.m.
11. The method of producing the processing tool as claimed in claim
9, wherein said step (a) uses a content of the silica grains in the
abrasive grains in a range of 10 to 70 volume percent.
12. The method of producing the processing tool as claimed in claim
9, wherein said step (a) uses a binder made of a material which
generates no endothermic reaction during the process carried out on
the silicon work-piece by the processing tool.
13. A processing method for carrying out a fixed-abrasive grinding
process on a surface of a silicon work-piece, comprising the steps
of: (a) positioning the silicon work-piece relative to a processing
tool having abrasive grains made up silica grains; and (b)
processing the surface of the silicon work-piece by the abrasive
grains of the processing tool.
14. The processing method as claimed in claim 13, wherein the
silica grains have a primary average grain size of 0.8 nm to 10
.mu.m.
15. The processing method as claimed in claim 13, wherein a content
of the silica grains in the abrasive grains in a range of 10 to 70
volume percent.
16. The processing method as claimed in claim 13, wherein the tool
includes a binder which bonds the abrasive grains and is made of a
material which generates no endothermic reaction during the process
carried out on the silicon work-piece.
17. A processing method for carrying out a process on a disk-shaped
or donut-shaped work-piece, comprising the steps of: (a) grinding
an outer peripheral surface of the work-piece by a grindstone; and
(b) polishing cutout part on the outer peripheral surface of the
work-piece and/or an inner peripheral surface of the work-piece by
a polishing film.
18. The processing method as claimed in claim 17, wherein said step
(a) uses a grindstone including abrasive grains which generate
mechano-chemical reaction with respect to a processing surface of
the work-piece.
19. The processing method as claimed in claim 18, wherein the
abrasive grains have a primary average grain size of 0.8 nm to 10
.mu.m.
20. The processing method as claimed in claim 17, wherein said step
(b) uses a polishing film including abrasive grains which generate
mechano-chemical reaction with respect to a processing surface of
the work-piece.
21. The processing method as claimed in claim 20, wherein said step
(b) uses a flexible polishing film.
22. The processing method as claimed in claim 20, wherein the
abrasive grains have a primary average grain size of 0.8 nm to 10
.mu.m.
23. The processing method as claimed in claim 17, wherein said
steps (a) and (b) respectively carry out a dry grinding process and
a dry polishing process.
24. A processing apparatus for carrying out a process on a
disk-shaped or donut-shaped work-piece, comprising: a grinding unit
grinding an outer peripheral surface of the work-piece by a
grindstone; a polishing unit polishing cutout part on the outer
peripheral surface of the work-piece and/or an inner peripheral
surface of the work-piece by a polishing film; and a transport unit
transporting the work-piece at least between the grinding unit and
the polishing unit and positioning the work-piece in the grinding
unit and the polishing unit.
25. The processing apparatus as claimed in claim 24, wherein said
grinding unit includes a grindstone having abrasive grains which
generate mechano-chemical reaction with respect to a processing
surface of the work-piece.
26. The processing apparatus as claimed in claim 25, wherein the
abrasive grains have a primary average grain size of 0.8 nm to 10
.mu.m.
27. The processing apparatus as claimed in claim 24, wherein said
polishing unit includes a polishing film having abrasive grains
which generate mechano-chemical reaction with respect to a
processing surface of the work-piece.
28. The processing apparatus as claimed in claim 27, wherein said
polishing film is flexible.
29. The processing apparatus as claimed in claim 27, wherein the
abrasive grains have a primary average grain size of 0.8 nm to 10
.mu.m.
30. The processing apparatus as claimed in claim 24, wherein said
grinding unit and said polishing unit respectively carry out a dry
grinding process and a dry polishing process.
Description
[0001] This application claims the benefit of Japanese Patent
Applications No.11-237467 filed Aug. 24, 1999, No.11-260799 filed
Sep. 14, 1999, No.11-278608 filed Sep. 30, 1999 and No.11-206355
filed Oct. 28, 1999, in the Japanese Patent Office, the disclosures
of which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention generally relates to processing tools,
methods of producing processing tools, processing methods and
processing apparatuses, and more particularly to a processing tool
which is used to grind a work-piece made of silicon or the like, a
method of producing such a processing tool, a processing method for
processing a peripheral part of a work-piece, and a processing
apparatus
[0004] 2. Description of the Related Art
[0005] Conventionally, in a finishing process of a silicon wafer, a
polishing process uses colloidal silica as the slurry and a
flexible polishing cloth as the polishing tool. However, since the
polishing process uses the slurry, there are problems in that the
processing environment is harsh, the waste water must be processed,
the running cost of the processing system is high, the processing
efficiency is low, and the shaping accuracy (flatness) is poor. For
this reason, there are demands to carry out the finishing process
of the silicon wafer by a fixed-abrasive machining apparatus, that
is, by use of a fixed-abrasive grinding tool such as a grindstone
and a polishing film, and various tools therefor have been
proposed.
[0006] As conventional techniques which utilize the
mechano-chemical reaction between barium carbonate and silicon,
there is a first conventional technique proposed in a Japanese
Laid-Open Patent Application 5-285844, a second conventional
technique proposed in a Japanese Laid-Open Patent Application
No.5-285847, and a third conventional technique proposed in a
Japanese Laid-Open Patent Application No.10-329032.
[0007] According to the first through third conventional
techniques, the grindstone is formed by abrasive grains which are
made of barium carbonate. By utilizing the mechano-chemical
reaction that occurs between the abrasive grains and silicon, a
processed surface having a high quality is obtained, similarly to a
case where a loose-abrasive polishing process is carried out, such
that no residual damage remains after the processing. In other
words, it is possible, by using the barium carbonate for the
abrasive grains, to replace the conventional polishing process by
the grinding process.
[0008] On the other hand, silica generates a mechano-chemical
reaction with respect to silicon. In addition, since the
constituent elements of silica are silicon and oxygen, silica will
not form on the silicon a residual contamination resulting from the
mechano-chemical reaction between the silica and the silicon.
Furthermore, since the mechanical hardness of silica is higher than
that of barium carbonate, it is possible to realize a high removing
efficiency while maintaining the high accuracy of the processed
surface.
[0009] For example, in a fourth conventional technique proposed in
a Japanese Laid-Open Patent Application No.8-276366, a resin bonded
grindstone is produced by using silica as the aggregate. In fifth,
sixth and seventh conventional techniques respectively proposed in
Japanese Laid-Open Patent Applications No.5-285843, No.10-166259
and No.9-47969, the grindstone for grinding a sapphire substrate
uses silica for the abrasive grains.
[0010] According to the fourth conventional technique, silica is
not used for the abrasive grains, but is used for the aggregate, so
as to improve the dispersibility of the abrasive grains and improve
the adjustment of the specific gravity of the binder.
[0011] According to the fifth and sixth conventional techniques,
the grindstone for grinding sapphire is formed by using silica
which is mechanically softer than sapphire. A high-quality grinding
of sapphire is realized by utilizing the mechano-chemical reaction
at a point of contact between the abrasive grains and the
sapphire.
[0012] According to the seventh conventional technique, ultra-fine
silica or silicon oxide powder having a grain diameter of several
tens of nm or less is used as the abrasive grains. A silicon wafer
or the like is mirror finished with a high accuracy without
loading, by use of the grindstone which is formed at a
predetermined porosity. It is, however, not the main object of the
seventh conventional technique to generate the mechano-chemical
reaction by the use of the silica abrasive grains.
[0013] When barium carbonate is used for the abrasive grains as in
the case of the first through third conventional techniques, the
mechano-chemical reaction between the barium carbonate and the
silicon causes a compound thereof to be generated on the silicon as
residual contamination. The compound is made up of barium, silicon
and oxygen. Hence, the generated contamination deteriorates the
quality of the processed surface, and it is necessary to carry out
a cleaning process as an after-process. Moreover, the barium
carbonate has a mechanical hardness lower than that of the silicon
and is easier to process the barium carbonate with a high accuracy,
but as a consequence, the removing efficiency is too low for use
during the production process.
[0014] On the other hand, as in the case of the fourth conventional
technique, silica is generally used as the aggregate, so as to
improve the dispersibility of the abrasive grains and improve the
adjustment of the specific gravity of the binder, when carrying out
the process using the resin bonded grindstone. In the fifth and
sixth conventional techniques, silica is used as the abrasive
grains for polishing sapphire, but no consideration is given on the
use of silica as the abrasive grains for polishing a silicon wafer.
Further, since the seventh conventional technique uses the silica
powder having a grain diameter of several tens of nm or less, it is
difficult to realize a high removing efficiency.
SUMMARY OF THE INVENTION
[0015] Accordingly, it is a general object of the present invention
to provide a novel and useful processing tool, method of producing
processing tool, processing method and processing apparatus, in
which the problems described above are eliminated.
[0016] Another and more specific object of the present invention is
to provide a processing tool, method of producing processing tool,
processing method and processing apparatus, which use silica
abrasive grains to generate a mechano-chemical reaction with
respect to silicon but prevents residual contamination from
remaining on the silicon due to the mechano-chemical reaction.
[0017] Still another object of the present invention is to provide
a processing tool for carrying out a fixed-abrasive grinding
process on a surface of a silicon work-piece, comprising abrasive
grains made up silica grains. According to the processing tool of
the present invention, it is possible to utilize the
mechano-chemical reaction generated by the silica grains on the
silicon work-piece, and realize a high removing efficiency while
maintaining a high quality of the processed surface.
[0018] A further object of the present invention is to provide a
method of producing a processing tool having abrasive grains for
carrying out a fixed-abrasive grinding process on a surface of a
silicon work-piece, comprising the step of (a) mixing a binder and
silica grains to form a mixture, and (b) forming the mixture into
the abrasive grains of the processing tool. According to the method
of the present invention, it is possible to produce a processing
tool which utilizes the mechano-chemical reaction generated by the
silica grains on the silicon work-piece, to realize a high removing
efficiency while maintaining a high quality of the processed
surface.
[0019] Another object of the present invention is to provide a
processing method for carrying out a fixed-abrasive grinding
process on a surface of a silicon work-piece, comprising the steps
of (a) positioning the silicon work-piece relative to a processing
tool having abrasive grains made up silica grains, and (b)
processing the surface of the silicon work-piece by the abrasive
grains of the processing tool. According to the processing method
of the present invention, it is possible to utilize the
mechano-chemical reaction generated by the silica grains on the
silicon work-piece, to realize a high removing efficiency while
maintaining a high quality of the processed surface.
[0020] Still another object of the present invention is to provide
a processing method for carrying out a process on a disk-shaped or
donut-shaped work-piece, comprising the steps of (a) grinding an
outer peripheral surface of the work-piece by a grindstone, and (b)
polishing cutout part on the outer peripheral surface of the
work-piece and/or an inner peripheral surface of the work-piece by
a polishing film. According to the processing method of the present
invention, it is possible to stably and suitably process various
kinds of surfaces of the work piece with a high efficiency, so as
to obtain processed surfaces having a high quality, at a low
running cost.
[0021] A further object of the present invention is to provide a
processing apparatus for carrying out a process on a disk-shaped or
donut-shaped work-piece, comprising a grinding unit grinding an
outer peripheral surface of the work-piece by a grindstone, a
polishing unit polishing cutout part on the outer peripheral
surface of the work-piece and/or an inner peripheral surface of the
work-piece by a polishing film, and a transport unit transporting
the work-piece at least between the grinding unit and the polishing
unit and positioning the work-piece in the grinding unit and the
polishing unit. According to the processing apparatus of the
present invention, it is possible to stably and suitably process
various kinds of surfaces of the work piece with a high efficiency,
so as to obtain processed surfaces having a high quality, at a low
running cost.
[0022] Other objects and further features of the present invention
will be apparent from the following detailed description when read
in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] FIG. 1 is a diagram for explaining a second embodiment of a
processing apparatus according to the present invention;
[0024] FIG. 2 is a diagram for explaining a third embodiment of the
processing apparatus according to the present invention;
[0025] FIG. 3 is a diagram showing the general construction of a
fifth embodiment of the processing apparatus according to the
present invention;
[0026] FIG. 4 is a side view showing the shape of a grindstone;
[0027] FIG. 5 is a plan view showing a disk which is processed;
[0028] FIG. 6 is a cross sectional view showing a polishing film;
and
[0029] FIG. 7 is a diagram showing the general construction of a
sixth embodiment of the processing apparatus.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0030] A description will be given of a first embodiment of a
method of producing processing tool according to the present
invention. This first embodiment of the method of producing
processing tool produces a first embodiment of a processing tool
according to the present invention. In this embodiment, a
grindstone of the processing tool uses silica which generates a
mechano-chemical reaction with respect to silicon.
[0031] In this embodiment of the method of producing the processing
tool, this embodiment of the processing tool is produced by a
mixing step and a forming step. The mixing step mixes silica and a
liquid resin, together with an additive such as a solid lubricant
if necessary. The mixture is stirred, so as to obtain a binder
resin (mixture) which includes silica abrasive grains.
[0032] Silica generates a mechano-chemical reaction with respect to
silicon. However, since the constituent elements of silica are
silicon and oxygen, silica will not form on the silicon a residual
contamination resulting from the mechano-chemical reaction between
the silica and the silicon. Further, silica has a satisfactory
mechanical hardness which is higher than that of barium carbonate,
such that a high removing efficiency can be realized while
maintaining the surface quality of a processed surface high when
the silica processing tool is used to process the surface of a
work-piece.
[0033] In this case, the silica content in the abrasive grains is
10 to 70 volume percent (%), and an average grain diameter of
silica is 0.8 nm to 10 .mu.m.
[0034] If the silica content in the abrasive grains is less than 10
volume %, the silica abrasive grains do not generate the desired
reaction on silicon. On the other hand, if the silica content in
the abrasive grains exceeds 70 volume %, the loading of the
grindstone occurs, and the processing easily becomes unstable. In
this latter case, the amount of binder also becomes insufficient,
and there is a possibility that a desired tool strength required to
process the work-piece is not be obtainable.
[0035] If the average grain diameter used for the grindstone of the
processing tool is less than 0.8 nm, the mechanical action on the
work-piece becomes too small, and a desired mechano-chemical
reaction cannot be generated. On the other hand, if the average
grain diameter used for the grindstone exceeds 10 .mu.m, the
mechanical action becomes too large, and there is a possibility of
generating damage to the processing surface of the work-piece, such
as a silicon wafer surface.
[0036] On the other hand, the binder material is not limited to a
resin, and various other materials such as ceramics, metals,
silicate and magnesia may be used depending on the object of the
processing which is to be carried out by use of the processing
tool. It is desirable that the binder material does not generate an
endothermic reaction during the processing. For example, polymer
materials such as phenol resins and polyimide resins may be used
for the binder material.
[0037] As described above, silica generates the mechano-chemical
reaction with respect to silicon. But it is necessary that a
processing ambient temperature is sufficiently high so that the
chemical reaction of the mechano-chemical reaction occurs. If the
binder is made of a material such as an acrylic resin which has a
low melting point, the binder will melt due to heat which is
generated during the process carried out with respect to the
work-piece, and the endothermic reaction generated by the melting
of the binder causes the processing ambient temperature to
decrease. Consequently, it would become impossible to generate the
mechano-chemical reaction at the decreased processing ambient
temperature.
[0038] Therefore, the use of ceramics, metals and polymer materials
such as phenol resins and polyimide resins as the binder prevents
the binder from melting during the process carried out with respect
to the work-piece, which would thereby cause the endothermic
reaction that will decrease the processing ambient temperature.
[0039] Of course, it is possible not to include the binder in the
mixture. In this case, the silica abrasive grains are mutually
bonded by siloxane bonding to form the processing tool.
[0040] If necessary, the additive is added to improve the strength
and/or lubrication of the processing tool. The additive is also
desirably made of a material which does not generate an endothermic
reaction during the processing, since the endothermic reaction
would decrease the processing ambient temperature and thereby make
it impossible to generate the mechano-chemical reaction between
silica and silicon. For example, materials such as carbon and
molybdenum disulfide may be used for the additive. The use of such
materials for the additive ensures generation of the
mechano-chemical reaction, by preventing the additive from melting
and generating the endothermic reaction during the process which is
carried out with respect to the work-piece.
[0041] The forming step is carried out after the mixing step ends.
The forming step forms the grindstone by employing an abrasive
machining method which suits the binder used.
[0042] When making a resin bonded grindstone or a vitrified
grindstone, the mixture which is obtained by the mixing step is
subjected to a pressurized baking and drying. Alternatively, a
technique employing the electrophoretic effect as taught in a
Japanese Laid-Open Patent Application No.2000-176842 may be
employed. When making a metal bonded grindstone, electrodeposition,
hot pressing or the like is employed. Furthermore, when producing a
film-shaped processing tool, a coating step is carried out prior to
the forming step, so as to coat a binder resin (mixture) on a resin
film. In this coating step, the mixture is coated on a base
material, that is, a resin film, which is made of polyethylene
telephthalate, for example.
[0043] The base material used to produce the film-shaped processing
tool is not limited to polyethylene telephthalate film, and various
other materials may be used. Such various other materials include
plastic films made of polyimide, polycarbonate and the like,
synthetic paper, nonwoven fabric, and metal film.
[0044] The coating step which coats the mixture on the base
material may employ a wire bar coater, a gravure coater, a reverse
roller coater, a knife coater or the like.
[0045] A first embodiment of a processing method which processes a
work-piece employs this embodiment of the processing tool which is
produced in the above described manner. More particularly, the
processing tool is used to carry out a fixed-abrasive machining
process with respect to a work-piece, namely, a silicon wafer. The
fixed-abrasive machining process may be applied to a grinding
process which grinds the surface of the wafer, a polishing film
process which polishes the surface of the wafer, a grinding process
which grinds the outer peripheral surface of the wafer, a polishing
film process which polishes the outer peripheral surface of the
wafer, and the like.
[0046] In this fixed-abrasive machining process, a grindstone made
of silica abrasive grains or a polishing film made of silica
abrasive grains is mounted on a first embodiment of a processing
apparatus according to the present invention, and the work-piece is
ground to a predetermined dimension.
[0047] The processing apparatus used is not limited to a specific
type. Any type of processing apparatus appropriate for the type of
processing tool used may be employed for the fixed-abrasive
machining process.
[0048] This embodiment of the processing method uses the silica
abrasive grains so that the silicon processing surface of the
work-piece is processed with an extremely high surface quality,
free of damage caused by the processing, that is, without
generating residual contamination at the processed surface. As a
result, compared to the polishing process which is conventionally
used to finish the surface of the silicon wafer, this embodiment of
the processing method can obtain a comparable processing surface
quality at a much higher efficiency. In addition, this embodiment
of the processing method can realize a high shaping accuracy
(flatness). On the other hand, since this embodiment of the
processing method does not use loose-abrasive slurry as in the case
of the polishing process, the environment is unaffected by the
process, and the running cost of the processing apparatus can be
reduced.
[0049] Next, a description will be given of a second embodiment of
the processing tool according to the present invention and a second
embodiment of the method of producing the second embodiment of the
processing tool.
[0050] This second embodiment of the method of producing the
processing tool mixes fumed silica having an average grain diameter
of 30 nm and a wetting agent into a liquid acrylic resin, with the
volume % of the fumed silica grains being set to 50%. A resulting
mixture is stirred and mixed in a homogenizer for 5 minutes. A
binder resin which is obtained by this stirring and mixing, is
subjected to a pressurized baking for 30 minutes at a pressure of
50 MPa and a heating temperature of 150.degree. C. The baked binder
resin is further dried for 20 minutes to remove volatile
components, and a resin bonded grindstone made of silica abrasive
grains is obtained. In this case, the kind of binder used is not
limited to a specific resin, and it is possible to use instead any
material such as resins, ceramics and metals which will not
generate an endothermic reaction when the resin bonded grindstone
is used to process the work-piece. In addition, the kind of method
used to form the resin bonded grindstone may be appropriately
selected to suit the kind of binder used. Furthermore, the additive
(wetting agent) is also made of a material which will not generate
an endothermic reaction when the resin bonded grindstone is used to
process the work-piece.
[0051] This second embodiment of the processing tool which includes
the resin bonded grindstone described above, is used in a second
embodiment of the processing method which processes a work-piece.
More particularly, the resin bonded grindstone is mounted on a
vertical infeed grinding machine, and is used to grind the surface
of the work-piece which is a 8-inch diameter silicon wafer which
has already been lapped. By grinding the wafer surface for 30
seconds with a machining allowance of 30 .mu.m, it was possible to
obtain a processed surface having a high quality such that the
surface roughness is 1 nm Ry or less and the processed surface is
microcrack-free when viewed on a profile transmission electron
microscope (TEM).
[0052] FIG. 1 is a diagram for explaining a second embodiment of
the processing apparatus according to the present invention, which
employs this second embodiment of the processing method. In FIG. 1,
a grindstone 1 is mounted in a ring-shape on a rotary grinder 10 of
a vertical infeed grinding machine. A silicon wafer 2 which forms
the work-piece is placed and held on a work-piece holder 20. The
rotary grinder 10 rotates at a predetermined speed, and the
work-piece holder 20 rotates in the same direction as the rotary
grinder 10 but at a speed lower than the predetermined speed. The
work-piece holder 20 rotates about a rotary axis different from
that of the rotary grinder 10, and feeds the silicon wafer 2 to a
grinding position at a constant speed, so as to continuously grind
the surface of the silicon wafer 2 to a desired dimension.
[0053] Next, a description will be given of a third embodiment of
the processing tool according to the present invention and a third
embodiment of the method of producing the third embodiment of the
processing tool.
[0054] This third embodiment of the method of producing the
processing tool mixes colloidal silica having an average grain
diameter of 80 nm into a liquid urethane resin, with the volume %
of the colloidal silica grains being set to 65%. A resulting
mixture is stirred and mixed in a homogenizer for 5 minutes. A
binder resin which is obtained by this stirring and mixing, is
coated on a polyethylene telephthalate film to a thickness of 3
.mu.m. This film which is coated with the binder resin is heated
for 10 minutes, and subjected to a drying and curing processes, so
as to obtain a polishing film.
[0055] This third embodiment of the processing tool which includes
the polishing film described above, is used in a third embodiment
of the processing method which processes a work-piece. More
particularly, the polishing film is used to polish the outer
peripheral surface of the 6-inch diameter silicon wafer. After 2
minutes of polishing, it was possible to polish the outer
peripheral surface of the silicon wafer to a processed surface
having a high quality which is free of scratches.
[0056] FIG. 2 is a diagram for explaining a third embodiment of the
processing apparatus according to the present invention, which
employs this third embodiment of the processing method. In FIG. 2,
a polishing film 33 is provided between a supply spool 31 and a
take-up spool 32 via rollers 21 and 22. The outer peripheral
surface of the silicon wafer 2 is pushed against the polishing
surface of the polishing film 33, between the rollers 21 and 22.
The polishing film 33 is supplied from the supply spool 31 and
taken up on the take-up spool 32, by driving at least the take-up
spool 32 by a known driving means such as a motor, so as to polish
the outer peripheral surface of the silicon wafer 2. Of course, it
is possible to drive both the take-up spool 32 and the supply spool
31, so that the polishing film 33 is moved back and forth instead
of being transported in only one direction from the supply spool 31
to the take-up spool 32.
[0057] The silicon wafer 2 may assume a fixed position relative to
the polishing film 33 during the polishing process or, may be
controlled to push against the polishing film 33 with a controlled
pressure.
[0058] Next, a description will be given of a fourth embodiment of
the processing tool according to the present invention and a fourth
embodiment of the method of producing the fourth embodiment of the
processing tool.
[0059] This fourth embodiment of the method of producing the
processing tool mixes colloidal silica having an average grain
diameter of 30 nm and a binder into a solvent, with the volume % of
the colloidal silica grains being set to 20%. A water-soluble
polymer is used as the binder, with the volume % of the
water-soluble polymer being set to 30 volume %. Water is used as
the solvent, with the volume % of the water being set to 50 volume
%. A resulting mixture is stirred and mixed at a low speed in a
state where a D.C. voltage of 10 V is applied across an anode and a
cathode which are inserted into the mixture, and the
electrophoresis is carried out for 60 minutes. An abrasive grain
layer having a thickness on the order of approximately 5 mm is
formed around the anode, and this abrasive grain layer is removed
from the anode to form a grindstone: pellet having a thickness of 5
mm. Thereafter, this grindstone pellet is dried at a temperature of
100.degree. C. for 1 hour, so as to finally obtain a resin bonded
grindstone made of silica abrasive grains.
[0060] This fourth embodiment of the processing tool which includes
the resin bonded grindstone described above, is used in a fourth
embodiment of the processing method which processes a work-piece.
More particularly, the resin bonded grindstone is mounted on a
vertical infeed grinding machine such as that shown in FIG. 1, and
is used to grind the surface of the work-piece which is a 8-inch
diameter silicon wafer which has already been lapped. By grinding
the wafer surface for 30 seconds with a machining allowance of 30
.mu.m, it was possible to obtain a processed surface having a high
quality such that the surface roughness is 1 nm Ry or less and the
processed surface is microcrack-free when viewed on the profile
transmission electron microscope (TEM).
[0061] Next, a description will be given of further embodiments of
the processing method according to the present invention and the
processing apparatus according to the present invention, which are
particularly suited for processing a circumferential part of a thin
disk-shaped work-piece such as a semiconductor wafer. The
work-piece may be made of semiconductor materials such as silicon,
gallium arsenide and sapphire, hard and brittle materials such as
quartz, glass and alumina-titanium carbide, and metals.
[0062] In order to facilitate the understanding of the embodiments
described hereinafter, a description will first be given of the
background technology.
[0063] A semiconductor wafer such as a silicon wafer is used as a
substrate material for a semiconductor device. Polysilicon is used
as the raw material, and a single crystal ingot is subjected to
various processes before the silicon wafer (bear silicon wafer) is
obtained. The actual production processes are described in a
Japanese Laid-Open Patent Application No.5-13388, for example. In
the production processes, there is a process of finishing the outer
peripheral part of the wafer.
[0064] Unlike the flat top surface of the wafer, the outer
peripheral surface of the wafer does not need to have an extremely
high quality such that it is damage-free, since no devices are
formed on the outer peripheral surface. Conventionally, the outer
peripheral surface of the wafer is chamfered by a rough grinding
process, and then subjected to a chemical etching to remove the
damage. However, extremely small undulations and microcracks remain
on the outer peripheral surface of the wafer which is processed in
this manner. As a result, when the wafer is handled during the
device producing process, cracks may be formed from the extremely
small undulations, and foreign or dust particles may be generated
from the microcracks. In addition, the strength of the wafer may
deteriorate due to the existence of such cracks. Furthermore, when
layers are formed on the wafer, abnormalities may be generated at
layer portions in the vicinity of the outer peripheral surface of
the wafer.
[0065] Hence, according to a technique proposed in a Japanese
Laid-Open Patent Application No.5-13388, a polishing process is
carried out by use of a polishing cloth after the chemical etching
process, while supplying the slurry. The extremely small
undulations and microcracks in the outer peripheral surface of the
wafer can be reduced to an tolerable extent by carrying out such a
polishing process. When carrying out this polishing process on the
outer peripheral surface of the wafer, unwoven fabric or urethane
foam is mainly used for the polishing cloth, as in the case of a
polishing process carried out with respect to the flat top surface
of the wafer. In addition, colloidal silica slurry is mainly used
as the slurry, as in the case of the polishing process carried out
with respect to the flat top surface of the wafer.
[0066] On the other hand, in order to prevent undulations on the
outer peripheral surface of the wafer from increasing due to the
chemical etching process, a Japanese Laid-Open Patent Application
No.8-236489 proposes a first proposed method which omits the
chemical etching process. On the other hand, a mixed acid, such as
a mixture of hydrofluoric acid, nitric acid and acetic acid, when
used as a chemical etchant for the chemical etching process, causes
environmental problems unless an appropriate waste water process is
carried out. Hence, there is a second proposed method which uses an
alkaline solution such as a sodium hydroxide solution as the
chemical etchant. But in the case of the second proposed method,
the undulations on the outer peripheral surface of the wafer tend
to increase, and for this reason, the finishing process which is
thereafter carried out with respect to the outer peripheral surface
must remove an increased amount to remove the increased
undulations. Accordingly, methods have been proposed to reduce the
processing time, by carrying out a grinding process to a small
extent prior to the polishing process, when carrying out the
finishing process with respect to the outer peripheral surface of
the wafer. Such methods are proposed in Japanese Laid-Open Patent
Applications No.9-57584 and No.9-57585, for example.
[0067] As techniques related to the finishing process with respect
to the outer peripheral surface of the wafer, various proposals
have been made on the processing method and the processing
apparatus which carry out a process on a work-piece, and the
processing tool and the method of producing the processing tool
which is used for such a process.
[0068] For example, processing methods and processing apparatuses
which use a polishing cloth as the processing tool and carry out
the finishing (polishing) process while supplying the slurry, are
proposed in Japanese Laid-Open Patent Applications No.5-6881,
No.5-23959, No.5-123952, No.5-243196, No.7-50279, No.9-94746,
No.10-29142, No.10-71549, No.10-328989 and No.11-70450. In
addition, the polishing cloth is proposed in a Japanese Laid-Open
Patent Application No.5-152260, for example. A processing tool
which is made of a material with a hardness greater than unwoven
fabric or the like, such as cast iron and stainless steel, has also
been proposed. But as noted in a Japanese Laid-Open Patent
Application No.10-71549, for example, a mirror finishing is
difficult by use of a processing tool which has a high hardness,
and such a processing tool is suited for use in a rough grinding
process rather than the finishing (polishing) process.
[0069] On the other hand, a linear cutout called an orientation
flat is provided on the outer peripheral surface of the wafer. This
orientation flat is used as a reference for the purpose of
positioning the wafer or aligning the crystal orientation of the
wafer when carrying out a device producing process. Recently, the
cutout forming the orientation flat has become smaller, so as to
enable a larger number of chips to be accommodated on one wafer.
Moreover, an arcuate or V-shaped cutout called a notch is popularly
used as the orientation flat. The cutout part can be made small by
using the notch. Hence, there is a further advantage in that the
balance of motion is improved when the wafer is rotated during
various processes including a drying process.
[0070] The orientation flat part or the notch part has a shape
quite different from the continuous outer peripheral surface of the
wafer. For this reason, various processing methods and processing
tools have been developed for the orientation flat part or the
notch part, which are quite different from the processing methods
and processing tools developed for the continuous outer peripheral
surface of the wafer. For example, a Japanese Laid-Open Patent
Application No.7-50279 proposes a technique which can improve the
processing speed by using different polishing cloths for the outer
peripheral surface and the orientation flat part of the wafer. In
addition, methods and apparatuses for finishing the notch part are
proposed in Japanese Laid-Open Patent Applications No.7-1322,
No.8-168947 and No.8-236490. All of these methods and apparatuses
basically use a polishing cloth as the processing tool, and carry
out the finishing (polishing) process while supplying slurry. The
Japanese Laid-Open Patent Application No.8-168947 also takes into
consideration the use of a polishing belt or a polishing film as
the processing tool.
[0071] The proposed methods and apparatuses described above carry
out the loose-abrasive polishing process to finish the surface of
the wafer using the polishing cloth while supplying the slurry.
However, the loose-abrasive polishing process have problems in that
the processing environment is harsh, the waste water must be
processed, the running cost of the processing system is high, and
the processing efficiency is low. For this reason, there are
proposals to carry out the finishing (polishing) process on the
wafer by a fixed-abrasive machining apparatus, that is, by use of a
fixed-abrasive grinding tool.
[0072] Various processing methods and processing apparatuses which
use a polishing film as the fixed-abrasive grinding tool, and
techniques related thereto are proposed for example in Japanese
Laid-Open Patent Applications No.7-100748, No.7-171749, No.7-237100
and No.8-168946.
[0073] For example, Japanese Laid-Open Patent Applications
No.7-100748, No.7-124853, No.8-118226 and No.9-76148 propose
processing methods and processing apparatus which use a polishing
film as the processing tool for processing the orientation flat
part or the notch part of the wafer.
[0074] Other processing methods use a grindstone as the
fixed-abrasive grinding tool. Such processing methods are proposed
in Japanese Laid-Open Patent Applications No.6-210520, No.7-58065,
No.8-90401, No.8-197400 and No.10-189508, for example.
[0075] Therefore, the loose-abrasive polishing process which uses
the polishing cloth and the slurry to finish the outer peripheral
surface of the wafer have problems from the point of view of the
waste water process which is required and the high running cost of
the processing apparatus. In addition, the processing efficiency of
the loose-abrasive polishing process is low in general, and it
takes approximately 7 minutes to finish the outer peripheral
surface of one wafer. Compared to other processes such as a lapping
process carried out with respect to the top and bottom surfaces of
one wafer which only requires approximately 1 to 2 minutes, it may
be seen that the processing efficiency of the loose-abrasive
polishing process is low. Accordingly, there are demands to improve
the processing efficiency, by the use of a fixed-abrasive grinding
tool such as the polishing film and the grindstone.
[0076] However, the conventional processing methods used to finish
the outer peripheral surface of the wafer do not take into
consideration the optimization of the processing tool used for each
part of the wafer. In other words, the conventional processing
methods change the conditions under which the processing tool is
used with respect to specific parts of the wafer, but do not
optimize the processing tool for each part of the wafer by changing
the processing tool for each part of the wafer, for example.
Because the processing tool is not optimized for each part of the
wafer to be processed, the following problems occur.
[0077] In the case where the grindstone is used as the
fixed-abrasive grinding tool, the grindstone must normally be moved
at a tool speed on the order of several hundred m/min or greater in
order to carry out a satisfactory grinding process. Accordingly, a
high tool speed can be realized with respect to the outer
peripheral surface of the wafer since it is possible to use a
grindstone having a large diameter, but a sufficiently high tool
speed cannot be realized with respect to the notch part of the
wafer since it is only possible to use a grindstone having a small
diameter. As a result, there are problems in that the wear of the
grindstone is large, the tool life is short, the loading of the
grindstone easily occurs, the shaping accuracy of the notch part
easily deteriorates, and the quality of the processed surface is
extremely poor at the notch part of the wafer as compared to that
at the outer peripheral part of the wafer. It is conceivable to use
a grindstone having a large diameter to process the notch part of
the wafer, but in this conceivable case, it becomes necessary to
control the grindstone so that a rotary axis of the grindstone
becomes parallel to the wafer surface. But the outer peripheral
surface of the wafer, including the notch part, is chamfered. For
this reason, in order to process the wafer by controlling the
rotary shaft of the grindstone to become parallel to the wafer
surface, it would be necessary to carry out the grinding process
separately at three locations, namely, the upper portion of the
chamfered part, a central portion of the chambered part, and a
lower portion of the chambered part of the wafer. As a result, it
would be impossible to reduce the processing time.
[0078] On the other hand, compared to the grindstone, the
capability of holding the abrasive grains and the strength or
rigidity of the polishing film are low. In addition, the tool speed
is relatively low in the case of the polishing film, and the
removing efficiency realized by the polishing film is low as
compared to that of the grindstone. As a result, when the polishing
film is used to finish the entire outer peripheral surface of the
wafer, it is impossible to reduce the processing time.
[0079] Problems similar to the problems described above with
respect to the semiconductor wafer also occur when processing the
outer peripheral surface of a disk or wafer made of materials such
as metals and hard and brittle materials such as quartz, glass and
alumina-titanium carbide. In the case of a donut-shaped glass disk,
problems similar to those described above which are encountered
when processing the outer peripheral surface and the cutout part of
the wafer, also occur when processing an inner peripheral surface
defining a center hole of the donut-shaped glass disk. Recently,
the loose-abrasive polishing process is carried out with respect to
the center hole of the glass disk in order to prevent generation of
foreign or dust particles and to improve the mounting accuracy of
the glass disk with respect to a disk unit. Consequently, the
loose-abrasive polishing process carried out with respect to the
center hole of the glass disk also results in problems in that the
processing environment is harsh, the waste water must be processed,
the running cost of the processing system is high, and the
processing efficiency is low. Hence, it is conceivable to process
the center hole of the glass disk by use of a grindstone, but in
this case, it would only be possible to use a grindstone having a
small diameter, similarly as when processing the cutout part at the
outer peripheral surface of the wafer. Therefore, the use of the
grindstone to process the center hole of the glass disk would
result in problems in that a sufficiently high tool speed cannot be
obtained and the wear of the grindstone is large.
[0080] On the other hand, Japanese Laid-Open Patent Applications
No.9-123050, No.10-44007 and No.11-70450 point out a problem caused
by the use of the polishing film or the polishing cloth. In other
words, marks, scratches or the like matching a transport direction
of the polishing film or the polishing cloth is inevitably formed
on the processed surface.
[0081] According to the technique proposed in the Japanese
Laid-Open Patent Application No.8-90401, a grindstone including
silica abrasive grains is used to process the outer peripheral part
of the wafer to a mirror finish, while supplying a water-soluble
processing fluid. But according to the experiments conducted by the
present inventors, it was confirmed that the use of the
water-soluble processing fluid suppresses the mechano-chemical
reaction of silica with respect to silicon, and the removing effect
caused thereby is virtually lost, thereby making it extremely
difficult to realize the desired polishing process. On the other
hand, the Japanese Laid-Open Patent Application No.8-197400
proposes a technique which uses a grindstone made of fine abrasive
grains and a elastic binder for the purposes of polishing the outer
peripheral part of the wafer. However, in order to process the
outer peripheral part of the wafer to a processed surface with a
quality comparable to a mirror finish, the mechano-chemical
processing is essential. Hence, it is extremely difficult to obtain
a processed surface having a high quality solely by the mechanical
removal as proposed in the Japanese Laid-Open Patent Application
No.8-197400.
[0082] Accordingly, the further embodiments of the processing
method according to the present invention and the processing
apparatus according to the present invention are designed to
eliminate the above described problems, and are particularly suited
for processing a circumferential part of a thin disk-shaped
work-piece such as a semiconductor wafer.
[0083] FIG. 3 is a diagram showing the general construction of a
fifth embodiment of the processing apparatus according to the
present invention. This fifth embodiment of the processing
apparatus employs a fifth embodiment of the processing method
according to the present invention.
[0084] A processing apparatus 100 shown in FIG. 3 includes a
grinding unit 110, a transport unit 120, and a film polishing unit
130 which are arranged on mutually independent blocks and are
independently controllable by a controller (not shown).
[0085] The grinding unit 110 includes a work moving section 111 and
a grinding section 112 which are both mounted on a base of the
corresponding block.
[0086] In the work moving section 111, a slide table 114 is
slidably provided on a pair of guide rails 113 which are provided
on the base of the corresponding block. The slide table 113 is
slidable in horizontal directions indicated by arrows in FIG. 3. A
mechanism (not shown) for moving the slide table 114 may be
realized by a known means such as a structure which rotates an
integrated guide-and-ball-screw by a motor, or a rack and pinion
structure.
[0087] A work rotating motor 115 which is linked to a work table
116 is fixed on the slide table 114. A plurality of vacuum suction
pads (not shown) are provided in the work table 116. A disk-shaped
work-piece 102, such as a disk and a wafer, is placed and
positioned on the work table 116 by the transport unit 120, and is
held in position on the work table 116 under suction from under the
work table 116 via the vacuum suction pads.
[0088] In the grinding section 112, a frame 117 is provided on one
side of the guide rails 113, opposite to the transport unit 120. A
pair of guide rails (not shown) extend vertically on the frame 117,
and a slider 150 is slidably supported on these vertical guide
rails. An elevator mechanism (not shown) which moves the slider 150
up and down, may be realized by a known means such as a structure
which rotates an integrated guide-and-ball-screw by a motor, or a
rack and pinion structure.
[0089] A grinding motor 119 is fixed on the slider 150. A
grindstone 103 is linked to a rotary shaft of the grinding motor
119.
[0090] The grindstone 103 is made of abrasive grains which generate
a mechano-chemical reaction when used to polish a surface of the
work-piece 102 or, made of a binder mixture such as resins,
ceramics and metals which include such abrasive grains. An average
grain diameter of the abrasive grains is set in a range of 0.8 nm
to 10 .mu.m. If the average grain diameter used for the grindstone
103 is less than 0.8 nm, the mechanical action on the work-piece
102 becomes too small, and a desired mechano-chemical reaction
cannot be generated. On the other hand, if the average grain
diameter used for the grindstone 103 exceeds 10 .mu.m, the
mechanical action becomes too large, and there is a possibility of
generating damage to the outer peripheral surface of the work-piece
102 which is processed.
[0091] For example, the method described above may be employed to
produce the grindstone 103 which includes silica abrasive grains.
In this embodiment, the grindstone 103 has a multi-level structure
as shown in FIG. 4. A plurality of tapered grooves 103a through
103c are formed on the outer peripheral surface of the cylindrical
grindstone 103. When polishing the outer peripheral surface of the
work-piece 102, the outer peripheral surface of the work-piece 102
is pushed against one of the tapered grooves 103a through 103c of
the grindstone 103. As the grindstone 103 wears out due to
friction, the tapered groove which is used for the polishing
process may be appropriately changed among the tapered grooves 103a
through 103c.
[0092] As described above and in Japanese Laid-Open Patent
Application No.2000-190228 and Japanese Patent Application
No.11-82171, for example, silica abrasive grains are used as the
abrasive grains which generate the mechano-chemical reaction when
used to polish the surface of the work-piece 102 which is made of
silicon. However, it is also possible to use grains made of other
materials, such as barium carbonate grains, as the abrasive grains
which generate the mechano-chemical reaction. Furthermore, when the
work-piece 102 is made of glass, for example, it is possible to use
cerium oxide grains as the abrasive grains which generate the
mechano-chemical reaction.
[0093] The transport unit 120 has a swivel shaft mounted on the
corresponding block or the floor. The transport unit 120 includes a
robot hand (or a link section) 123, a pivot section 121 which turns
the link section 123 in a horizontal direction, and a slider
section 122 which is arranged on the pivot section 121 and moves
the link section 123 up and down. One end of the link section 123
is linked to the pivot section 121 and the slider section 122, and
the other end of the link section 123 is provided with vacuum
suction pads.
[0094] For example, the pivot section 121 transmits a torque
generated from a D.C. servo motor to the link section 123 via a
gear mechanism (not shown). A rotary angle of the link section 123
is obtained in the form of an electrical signal which is fed back
to the controller described above.
[0095] For example, the slider section 122 rotates a ball screw, a
continuous-thread screw or the like by a D.C. servo motor, and
transforms this rotary motion into a linear motion via a slide
bearing, a rod and the like. A moving distance of the link section
123 which moves up and down, is obtained in the form of an
electrical signal which is fed back to the controller described
above.
[0096] Manipulation functions such as moving, positioning and
fixing the work-piece 102 are realized by the feedback control
based on the driven amounts of the link section 123, the pivot
section 121 and the slider section 122. In other words, the
work-piece 102 is transported by a belt conveyor or the like from a
previous processing stage (not shown), and is moved and placed one
by one on the work table 116 of the grinding unit 110. On the other
hand, the work-piece 102 after being ground of the outer peripheral
surface by the grinding unit 110 is moved and placed on a work
table 137 of the polishing unit 130.
[0097] The polishing unit 130 includes a work moving section 133
and a polishing section 132 which are both mounted on a based on
the corresponding block.
[0098] In the work moving section 133, a slide table 135 is
slidably provided on a pair of guide rails 134 which are provided
on the base of the corresponding block. The slide table 135 is
slidable in horizontal directions indicated by arrows in FIG. 3. A
mechanism (not shown) for moving the slide table 135 may be
realized by a known means such as a structure which rotates an
integrated guide-and-ball-screw by a motor, or a rack and pinion
structure.
[0099] A work rotating motor 136 which is linked to the work table
137 is fixed on the slide table 135. For example, a stepping motor
may be used for the work rotating motor 136. A plurality of vacuum
suction pads (not shown) are provided in the work table 137. The
work-piece 102 is placed and positioned on the work table 137 by
the transport unit 120, and is held in position on the work table
137 under suction from under the work table 137 via the vacuum
suction pads.
[0100] In the polishing section 132, a tape-shaped polishing film
101 is wound on a supply reel 140 in a state free to be supplied
therefrom, and the supplied polishing film 101 is taken up on a
take-up reel 139 via a pressing roller 141. Motors (not shown)
which drive the supply reel 140 and the take-up reel 139 are both
rotatable in forward and reverse directions. By controlling the two
motor in synchronism, the polishing film 101 is transported upwards
and downwards in FIG. 3 to polish the work-piece 102 which is
positioned and held on the work table 137. More particularly, the
polishing film 101 presses against a cutout part 102a of the
work-piece 102 shown in FIG. 5 on the work table 137 while being
transported upwards and downwards, to polish the cutout part
102a.
[0101] As shown in FIG. 6, the polishing film 101 includes a resin
film 110a which forms the base material, and a binder resin 101b
which includes abrasive grains 101c which generate the
mechano-chemical reaction when processing the surface of the
work-piece 102. The binder resin 101b is coated on the resin film
101a, and then dried and cured. For the reasons described above,
the average grain diameter of the abrasive grains 101c is set in a
range of 0.8 nm to 10 .mu.m. For example, the method described
above may be employed to produce the polishing film 101 which
includes silica abrasive grains as the abrasive grains 101c. Silica
abrasive grains are used as the abrasive grains 101c which generate
the mechano-chemical reaction when used to polish the surface of
the work-piece 102 which is made of silicon. However, it is also
possible to use grains made of other materials, such as barium
carbonate grains, as the abrasive grains 101c which generate the
mechano-chemical reaction. Furthermore, when the work-piece 102 is
made of glass, for example, it is possible to use cerium oxide
grains as the abrasive grains 101c which generate the
mechano-chemical reaction.
[0102] When carrying out the polishing process, the side of the
polishing film 101 having the abrasive grains 101c is pressed
against the cutout part 102a of the work-piece 102 by the pressing
roller 141. The cutout part 102a is polished by transporting the
polishing film 102 upwards and/or downwards in FIG. 3. A width
(tape width) of the polishing film 101 is set slightly larger than
a width of the cutout part 102a.
[0103] A pressing unit 131 includes a frame 141-1 which is provided
on the side of the polishing film 101 having the resin film 101a
and rotatably supports the pressing roller 141, an air cylinder 138
which can move the frame 141-1 in the right and left directions,
and a swinging mechanism which uses a driving motor (not shown) to
swing or rotate the frame 141-1 in a back and forth direction which
is perpendicular to the transport direction of the polishing film
101. The pressing roller 141 is made of a resilient material or at
least the outer periphery of the pressing roller 141 is
sufficiently compliant. The outer peripheral shape, thickness and
the like of the pressing roller 141 correspond to those of the
cutout part 102a. The air cylinder 138 is controlled by the
controller, described above, so that a polishing pressure of the
polishing film 101 becomes a predetermined value. When carrying out
the polishing process, the frame 141-1 is pushed so as to press the
polishing film 101 against the work-piece 102.
[0104] Details of the grinding unit 110 and the polishing unit 130
may be found in Japanese Laid-Open Patent Applications No.8-90401
and No.9-76148, for example.
[0105] The work-piece 102 may be positioned based on an image
recognition made with respect to the top surfaces of the work
tables 116 and 137 using a sensor, such as a television camera, a
CCD image sensor and a vidicon. In this case, an image recognition
result is processed on a personal computer or the like, and a
center coordinate of the work-piece 102 is obtained with reference
to marks which are provided beforehand on the work tables 116 and
137. The movement of the link section 123 is controlled based on
the obtained center coordinate. On the other hand, a sensor (not
shown) is mounted on a tip end of the link section 123, so that by
recognizing the image of the work-piece 102 which is held, a
positioning mechanism can finely adjust the relative positions of
the work-piece 102 relative to the work tables 116 and 137. This
type of a positioning mechanism is described in a Japanese
Laid-Open Patent Application No.11-207611, for example.
[0106] Next, a description will be given of this fifth embodiment
of the processing method which finishes the outer peripheral
surface of the work-piece 102. It is assumed for the sake of
convenience that the work-piece 102 is a disk which includes the
cutout part (notch part) 102a and has already been subjected to a
pre-processing at a previous processing stage including at least a
chamfering process, a lapping process and an etching process such
as a chemical etching process.
[0107] This fifth embodiment of the processing method includes a
grinding step which grinds the outer peripheral surface of the
work-piece 102, that is, the circumferential surface of the disk,
and a polishing step which polishes the cutout part 102a on the
outer circumferential surface of the work-piece 102.
[0108] First, a description will be given of the grinding step.
[0109] In the transport unit 120, the work-piece 102 which is
transported from the previous processing stage by the conveyor belt
or the like is held by the link section 123 under suction via the
vacuum suction pads, and is moved and placed one by one on the work
table 116 of the grinding unit 110. In this state, the slide table
114 is locked by a locking mechanism (not shown) so as to stop at a
predetermined position. A position alignment is made so that in the
state where the work table 116 is stationary, the center of
rotation of the work table 116 and the center of the work-piece 102
match.
[0110] Next, in the grinding unit 110, the work-piece 102 which is
aligned of its position is held on the work table 116 by the vacuum
suction pads of the work table 116. The slide table 114 and the
slider 150 are moved, so as to position the grindstone 103 and the
work-piece 102 to predetermined positions.
[0111] Then, the work table 116 and the grindstone 103 are rotated,
and the slide table 114 is moved in a horizontal direction towards
the grindstone 103, so that the outer circumferential surface of
the work-piece 102 contacts one of the tapered grooves 103a through
103c of the grindstone 103. Furthermore, the slide table 114 is
moved by a predetermined quantity, so as to form a chamfered part
of the work-piece 102 into a mirror finish.
[0112] After the mirror finishing process ends, the rotations of
the work table 116 and the grindstone 103 are stopped. In addition,
the slide table 114 is moved in a horizontal direction towards the
transport unit 120 and stopped at a predetermined waiting
position.
[0113] Next, a description will be given of the polishing step.
[0114] After the grinding process, the pivot section 121 of the
transport unit 120 turns the link section 123 by a predetermined
amount towards the grinding unit 110, and further, the slider
section 122 lowers the link section 123 by a predetermined amount.
By this operation to turn and lower the link section 123, the
vacuum suction pads of the link section 123 make contact with the
work-piece 102 on the work table 116. The work-piece 102 is thus
held under suction from above by the vacuum suction pads of the
link section 123, and the suction from under the work table 116 is
released. Next, after the slider section 122 raises the link
section 123 by a predetermined amount, the pivot section 121 turns
the link section 122 by a predetermined amount towards the film
polishing unit 130. Moreover, the slider section 122 lowers the
link section 123 by a predetermined amount, and moves and places
the work-piece 102 which is held under suction by the link section
123 onto the work table 137. In this state, a position alignment is
made so that the center of rotation of the work table 137 and the
center of the work-piece 102 match, and the outer periphery of the
pressing roller 141 and the cutout part 102a of the work-piece 102
confront each other. When making this position alignment, the work
table 137 is turned if necessary.
[0115] Then, in the film polishing unit 130, the work-piece 102
which is aligned of its position is held by the vacuum suction pads
of the work table 137 from under the work-piece 102, and the
suction of the link section 123 is released. Thereafter, the slider
section 122 raises the link section 123 by a predetermined amount,
and the pivot section 121 turns the link section 123 by a
predetermined amount towards the grinding unit 110.
[0116] Next, the slide table 135 is moved by a predetermined amount
towards the polishing section 132, so as to move the work-piece 102
close to the pressing roller 141. Thereafter, the air cylinder 138
is driven, so that the polishing film 101 which is pushed by the
pressing roller 141 presses against the cutout part 102a of the
work-piece 102 at a predetermined polishing pressure.
[0117] Then, the take-up reel 139 and the supply reel 140 are
driven to transport the polishing film 101 vertically, back and
forth, so as to polish the cutout part 102a by the polishing film
101 which is pushed by the pressing roller 141. In this state, a
boundary between the cutout part 102a and the outer circumferential
part of the work-piece 102 is polished by rotating the work table
137 in the forward and reverse directions by a necessary amount. In
addition, the frame 141-1 is made to swing up and down if
necessary, by the driving motor and the swinging mechanism
described above.
[0118] After polishing the cutout part 102a of the work-piece 102,
the driving of the take-up reel 139, the supply reel 140 and the
air cylinder 138 are stopped, so that the pressing roller 141
recedes from the polishing position.
[0119] The pivot section 121 of the transport unit 120 then turns
the link section 123 by a predetermined amount towards the film
polishing unit 130, and the slider section 122 lowers the link
section 123 by a predetermined amount. By this turning and lower
operation, the vacuum suction pads of the link section 123 makes
contact with the work-piece 102 on the work table 137 and holds the
work-piece 102 from above by suction. Further, the suction from
under the work table 137 is released.
[0120] Next, after the slider section 122 raises the link section
123 by a predetermined amount, the pivot section 121 turns the link
section 123 towards the next processing stage (not shown). For
example, the next processing stage carries out an air cleaning
process with respect to the work-piece 102 which is transported
thereto.
[0121] According to this embodiment, the polishing film 101 is
transported in directions perpendicular to the top or bottom
surface of the work-piece 102. However, it is of course possible to
transport the polishing film 101 in a direction parallel to the top
or bottom surface of the work-piece 102. Such a parallel transport
of the polishing film is proposed in a Japanese Laid-Open Patent
Application No.7-124853, for example.
[0122] Moreover, this embodiment was described above along the
transport path through which the work-piece 102 is transported.
However, since the block of the grinding unit and the block of the
film polishing unit are independent of each other, it is of course
possible to carry out the control so that the grinding unit and the
film polishing unit carry out the processes simultaneously with
respect to two different work-pieces.
[0123] Next, a description will be given of a sixth embodiment of
the processing apparatus according to the present invention, by
referring to FIG. 7. FIG. 7 is a diagram showing the general
construction of the sixth embodiment of the processing apparatus
according to the present invention. This sixth embodiment of the
processing apparatus employs a sixth embodiment of the processing
method according to the present invention. In FIG. 7, those parts
which are the same as those corresponding parts in FIG. 3 are
designated by the same reference numerals, and a description
thereof will be omitted.
[0124] In this sixth embodiment, the present invention is applied
to the processing of a peripheral surfaces of a donut-shaped
work-piece such as a glass disk. More particularly, the film
polishing unit 130 shown in FIG. 3 is replaced by a film polishing
unit 130A shown in FIG. 7. After the outer circumferential surface
of a donut-shaped work-piece 102A is processed by the grinding unit
110 shown in FIG. 3, the film polishing unit 130A processes the
inner peripheral surface defining the center hole in the
donut-shaped work-piece 102A.
[0125] In a work moving section 133A of the film polishing unit
130A, a slide table 135 is slidably provided on a pair of guide
rails 134 which are provided on the base of the corresponding
block. The slide table 135 is slidable in horizontal directions
indicated by arrows in FIG. 7. A mechanism (not shown) for moving
the slide table 135 may be realized by a known means such as a
structure which rotates an integrated guide-and-ball-screw by a
motor, or a rack and pinion structure.
[0126] A work rotating motor 136 which is linked to a work table
137A is fixed on the slide table 135. For example, a stepping motor
may be used for the work rotating motor 136. The work table 137A
has a center opening which is larger than the center hole of the
work-piece 102A, and a plurality of vacuum suction pads (not shown)
on the outer periphery of the center opening. In a plan view, an
inner peripheral surface defining the center opening of the work
table 137A surrounds the inner peripheral surface defining the
center hole in the work-piece 102A. The work-piece 102A is held in
position on the work table 137A under suction from under the work
table 137A via the vacuum suction pads.
[0127] In a polishing section 132A, a tape-shaped polishing film
101A is wound on a supply reel 140A in a state free to be supplied
therefrom, and the supplied polishing film 101A is taken up on a
take-up reel 139A via a pressing roller 141A. Motors (not shown)
which drive the supply reel 140A and the take-up reel 139A are both
rotatable in forward and reverse directions. By controlling the two
motor in synchronism, the polishing film 101A is transported to the
left and right between the supply and take-up reels 140A and 139A
in FIG. 7 to polish the inner peripheral surface defining the
center hole of the work-piece 102A which is positioned and held on
the work table 137A. More particularly, the work-piece 102A on the
work table 137A is rotated at a predetermined speed by the work
rotating motor 136, while the pressing roller 141A pushes the
polishing film 101A against the inner peripheral surface defining
the center hole of the work-piece 102A, so that the inner
peripheral surface of the work-piece 102A is polished by the
polishing film 101A. A tape width of the polishing film 101A is
smaller than a diameter of the center hole of the work-piece 102A
but larger than a width of the pressing roller 141A. The polishing
film 101A can be produced in the same manner as the polishing film
101 of the fifth embodiment described above. In this sixth
embodiment, cerium oxide grains are used as the abrasive grains
101c which generate the mechano-chemical reaction when processing
the work-piece 102A.
[0128] A pressing unit 131A includes a frame 141A-1 which is
provided on the base material side of the polishing film 101A and
rotatably supports the pressing roller 141A, an air cylinder 138A
which moves the frame 141A-1 back and forth in perpendicular
directions towards the paper and from the paper in FIG. 7 and up
and down in vertical directions in FIG. 7, and a swinging mechanism
(not shown). The switching mechanism uses a driving motor (not
shown) to swing the frame 141A-1 in directions to the left and
right in FIG. 7. The pressing roller 141A is made of a resilient or
sufficiently compliant material. The outer peripheral shape,
thickness and the like of the pressing roller 141A are set
correspondingly to the shape of the inner peripheral surface of the
work-piece 102A. The air cylinder 138A moves the frame 141A-1 in a
manner described above, so as to push the abrasive grain side of
the polishing film 101A by the pressing roller 141A against the
inner peripheral surface of the work-piece 102A.
[0129] When carrying out the polishing process with respect to the
inner peripheral surface of the work-piece 102A, the work-piece
102A having the outer peripheral surface thereof already subjected
to the grinding process by the grinding unit 110 is transported by
the transport unit 120 to the film polishing unit 130A, similarly
as in the case of the fifth embodiment described above. The
position of the transported work-piece 102A is aligned so that the
center of rotation of the work table 137A matches the center of the
work-piece 102A, and the outer periphery of the pressing roller
141A confronts the inner peripheral surface of the work-piece
102A.
[0130] Next, in the film polishing unit 130A, the work-piece 102A
which is aligned of its position is held on the work table 137A by
suction via the vacuum suction pads. Thereafter, the air cylinder
138A is driven to appropriately move the frame 141A-1 up, down,
right and/or left by predetermined amounts, so as to make the
pressing roller 141A approach the inner peripheral surface of the
work-piece 102A. As a result, the pressing roller 141A makes the
polishing film 101A contact the inner peripheral surface of the
work-piece 102A with a predetermined polishing pressure.
[0131] Then, the take-up reel 139A and the supply reel 140A are
driven to transport the polishing film 101A left and right, while
rotating the work table 137A at a predetermined speed, so as to
polish the inner peripheral surface of the work-piece 102A. In
addition, the swinging mechanism and the driving motor swing the
frame 141A-1 back and forth towards the paper and away from the
paper in FIG. 7, if necessary.
[0132] After polishing the inner peripheral surface of the
work-piece 102A, the driving of the take-up and supply reels 139A
and 140A, the rotating of the work table 137A, and the driving of
the air cylinder 138A are stopped, so as to make the pressing
roller 141A recede from the polishing position.
[0133] Next, the transport unit 120 shown in FIG. 3 transports the
work-piece 102A which has been subjected to the processes in the
grinding unit 110 and the film polishing unit 130A to the an air
cleaning unit (not shown) which carries out the next air cleaning
process with respect to the work-piece 102A.
[0134] According to the fifth and sixth embodiments, the grindstone
103 is used to process the outer peripheral part of the work-pieces
102 and 102A having the relatively large processing surface. Since
the grindstone 103 may have a large diameter, it is possible to
obtain a sufficiently high tool speed when processing the outer
peripheral part of the work-pieces 102 and 102A. In addition, the
flexible polishing film 101 is used to process the cutout part
(notch part) 102a of the work-piece 102 having the relatively small
processing surface and a more complicated shape. The flexible
polishing film 101A is used to process the inner peripheral part of
the work-piece 102A having a relatively small processing surface,
such that the diameter of the tool usable for the inner peripheral
part is small compared to that usable for the outer peripheral
part. Therefore, it is possible to stably process the surfaces of
the work-pieces 102 and 102A with a high efficiency. Fresh unworn
parts of the polishing films 101 and 101A can always be used by
merely controlling the supply reel 140 or 140A and the take-up reel
139 or 139A, thereby preventing the loading.
[0135] Moreover, the grindstone 103 and the polishing films 101 and
101A used in the fifth and sixth embodiments may be made of
abrasive grains which generate the mechano-chemical reaction when
processing the surface of the work-piece 102 or 102A, such as
silica abrasive grains, barium carbonate abrasive grains and cerium
oxide abrasive grains. By using such abrasive grains, it is
possible to obtain a high-quality processed surface comparable to
that obtained by the conventional loose-abrasive polishing process,
even when applied to the fixed-abrasive grinding tool.
[0136] In addition, the fifth and sixth embodiments carry out a dry
grinding process and a dry polishing process. A mechano-chemical
process can be carried out by use of the abrasive particles which
generate the mechano-chemical reaction when processing the
work-piece. At the same time, it is possible to suppress the
deterioration of the working environment and the increase of the
running cost which would otherwise occur due to the need to supply
processing fluids such as the slurry and carry out the waste water
process.
[0137] Further, the fifth and sixth embodiments can not only carry
out the mechano-chemical process, but also prevent marks, scratches
and the like from being formed on the processed surface of the
work-piece in the transport direction of the polishing film or the
like.
[0138] It was confirmed through experiments conducted by the
present inventors that the outer peripheral part, the cutout part
of the outer peripheral part and the inner peripheral part of a
8-inch diameter silicon wafer can be processed to a mirror finish
comparable to that obtained by use of the conventional
loose-abrasive polishing process when the grindstone 103 and the
polishing film 101 or 101A having the following characteristics.
That is, silica abrasive grains having a primary average grain
diameter of 20 nm was used as the abrasive grains. In addition, a
resin bonded grindstone using a phenol resin as the binder was used
for the grindstone 103. Moreover, a film which uses a polyethylene
telephthalate as the base material and an urethane resin as the
binder was used as the polishing film 101 or 101A. It was possible
to complete the processing on the outer peripheral part of the
silicon wafer in 1 minute, starting from the transport of the
silicon wafer into the processing apparatus 100 to the transport of
the processed wafer out from the processing apparatus 100. This
processing time of 1 minute is extremely short when compared to 7
minutes which would be required to carry out a similar process on
the outer peripheral part of the silicon wafer by the conventional
loose-abrasive polishing process. Furthermore, no marks, scratches
and the like were formed on the processed surface of the silicon
wafer in the transport direction of the polishing film 101 or
101A.
[0139] Further, the present invention is not limited to these
embodiments, but various variations and modifications may be made
without departing from the scope of the present invention.
* * * * *