U.S. patent application number 10/377471 was filed with the patent office on 2004-04-22 for method for forming introgen-containing oxide thin film using plasma enhanced atomic layer deposition.
Invention is credited to Lim, Jung-wook, Yun, Sun-jin.
Application Number | 20040077182 10/377471 |
Document ID | / |
Family ID | 32064969 |
Filed Date | 2004-04-22 |
United States Patent
Application |
20040077182 |
Kind Code |
A1 |
Lim, Jung-wook ; et
al. |
April 22, 2004 |
METHOD FOR FORMING INTROGEN-CONTAINING OXIDE THIN FILM USING PLASMA
ENHANCED ATOMIC LAYER DEPOSITION
Abstract
A method for forming a nitrogen-containing oxide thin film by
using plasma enhanced atomic layer deposition is provided. In the
method, the nitrogen-containing oxide thin film is deposited by
supplying a metal source compound and oxygen gas into a reactor in
a cyclic fashion with sequential alternating pulses of the metal
source compound and the oxygen gas, wherein the oxygen gas is
activated into plasma in synchronization of the pulsing thereof,
and a nitrogen source gas is further sequentially pulsed into the
reactor and activated into plasma over the substrate in
synchronization with the pulsing thereof. According to the method,
a dense nitrogen-containing oxide thin film can be deposited at a
high rate, and a trace of nitrogen atoms can be incorporated in
situ into the nitrogen-containing oxide thin film, thereby
increasing the breakdown voltage of the film.
Inventors: |
Lim, Jung-wook;
(Daejeon-city, KR) ; Yun, Sun-jin; (Daejeon-city,
KR) |
Correspondence
Address: |
BLAKELY SOKOLOFF TAYLOR & ZAFMAN
12400 WILSHIRE BOULEVARD, SEVENTH FLOOR
LOS ANGELES
CA
90025
US
|
Family ID: |
32064969 |
Appl. No.: |
10/377471 |
Filed: |
February 27, 2003 |
Current U.S.
Class: |
438/785 ;
257/E21.269; 257/E21.28 |
Current CPC
Class: |
H01L 21/31616 20130101;
C23C 16/50 20130101; H01L 21/0228 20130101; C23C 16/45542 20130101;
H01L 21/3145 20130101; H01L 21/02175 20130101; C23C 16/308
20130101; C23C 16/45529 20130101; H01L 21/02274 20130101 |
Class at
Publication: |
438/785 |
International
Class: |
H01L 021/44; H01L
021/31; H01L 021/469 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 22, 2002 |
KR |
2002-64524 |
Claims
What is claimed is:
1. A method for forming a nitrogen-containing metal oxide thin film
on a substrate by supplying a source metal compound and oxygen gas
into a reactor in a cyclic fashion with sequential alternating
pulses of the source metal compound and the oxygen gas, wherein the
oxygen gas is activated into plasma over the substrate in
synchronization with the pulsing thereof, and a nitrogen source gas
is further sequentially pulsed into the reactor and activated into
plasma over the substrate in synchronization with the pulsing
thereof.
2. The method of claim 1, wherein the oxygen gas and the nitrogen
source gas are supplied at the same pulsing cycle.
3. The method of claim 1, wherein the nitrogen source gas is
supplied after the oxygen gas.
4. The method of claim 1, wherein the oxygen gas is supplied after
the nitrogen source gas.
5. The method of claim 1, wherein the nitrogen source gas is one
selected from the group consisting of N.sub.2, NH.sub.3, NO.sub.2,
N.sub.2O, and a mixture of the forgoing gases.
6. The method of claim 1, wherein at least one of the metal source
compound, the oxygen gas, and the nitrogen source gas is supplied
while being diluted with an inert carrier gas.
7. The method of claim 1, wherein the metal oxide is one selected
from the group consisting of Al.sub.2O.sub.3, Ta.sub.2O.sup.5,
TiO.sub.2, ZrO.sub.2, HfO.sub.2, and lanthanide series oxide.
8. The method of claim 1, wherein nitrogen atoms are incorporated
into the metal oxide thin film as the nitrogen source gas is
supplied.
9. The method of claim 1, wherein the substrate is prepared to have
a second metal oxide thin film by supplying a second metal source
compound and oxygen gas into the reactor in a cyclic fashion with
sequential alternating pulses of the second metal source compound
and the oxygen gas.
10. The method of claim 9, wherein the second metal source compound
and the metal source compound are the same.
11. The method of claim 10, wherein the second metal source
compound and the metal source compound are trimethylalumminum.
12. The method of claim 1, wherein after the metal oxide thin film
has been formed, a second metal oxide thin film is additionally
formed by supplying a second metal source compound and oxygen gas
into the reactor in a cyclic fashion with sequential alternating
pulses of the second metal source compound and the oxygen gas.
13. The method of claim 12, wherein the second metal source
compound and the metal source compound are the same.
14. The method of claim 13, wherein the second metal source
compound and the metal source compound are trimethylalumminum.
15. A method for forming a nitrogen-containing metal oxide thin
film on a substrate by supplying a source metal compound and a
reactant gas into a reactor in a cyclic fashion with sequential
alternating pulses of the source metal compound and the reactant
gas, wherein the reactant gas is activated into plasma over the
substrate in synchronization with the pulsing thereof, and the
reactant gas contains both nitrogen and oxygen atoms.
16. The method of claim 15, wherein the nitrogen source gas is one
selected from the group consisting of NO.sub.2, N.sub.2O, and a
mixture of the forgoing gases.
17. The method of claim 15, wherein the substrate is prepared to
have a second metal oxide thin film by supplying a second metal
source compound and oxygen gas into the reactor in a cyclic fashion
with sequential alternating pulses of the second metal source
compound and the oxygen gas.
18. The method of claim 17, wherein the second metal source
compound and the metal source compound are the same.
19. The method of claim 15, wherein after the metal oxide thin film
has been formed, a second metal oxide thin film is additionally
formed by supplying a second metal source compound and oxygen gas
into the reactor in a cyclic fashion with sequential alternating
pulses of the second metal source compound and the oxygen gas.
20. The method of claim 15, wherein the metal oxide is one selected
from the group consisting of Al.sub.2O.sub.3, Ta.sub.2O.sub.5,
TiO.sub.2, ZrO.sub.2, HfO.sub.2, and lanthanide series oxide.
Description
BACKGROUND OF THE INVENTION
[0001] This application claims priority from Korean Patent
Application No. 2002-64524, filed on Oct. 22, 2002, in the Korean
Intellectual Property Office, the disclosure of which is
incorporated herein in its entirety by reference.
[0002] 1. Field of the Invention
[0003] The present invention relates to a method for forming an
insulating thin film in the manufacture of a variety of electronic
devices, and more particularly, to a method for forming a metal
oxide thin film using atomic layer deposition (ALD).
[0004] 2. Description of the Related Art
[0005] Generally, insulating films for electronic devices have been
formed using physical vapor deposition (PVD) or chemical vapor
deposition (CVD). Recently, the application of atomic layer
deposition (ALD) in forming such insulating films is gradually
increasing. As is well known, rather than simultaneously supplying
source gases into a reactor, ALD involves sequentially alternating
pulses of different kinds of source gases to form a thin film. In
particular, the source gases are supplied sequentially into a
reactor at predetermined time intervals as pulses by timely opening
and closing gas supply valves for the source gases positioned near
the entrance of the reactor. In general, a purge gas is supplied
following each pulsing source gases at a predetermined rate to
remove the remaining, un-reacted gas from the reactor. More
recently, plasma enhanced ALD has been suggested for film
formation.
[0006] Various kinds of insulating films used in the semiconductor
field and which can be formed by ALD include, for example, gate
dielectrics having a very small thickness requirement, capacitor
dielectric layers, and insulating oxide layers. The use of
Al.sub.2O.sub.3, ZrO.sub.2, or HfO.sub.2 for gate dielectrics and
Al.sub.2O.sub.3, Ta.sub.2O.sub.5, or (Ba, Sr)TiO.sub.3 for
capacitor dielectric layers have been investigated more actively in
conjunction with the application of ALD. As a result, it was found
that an Al.sub.2O.sub.3 film having a very uniform thickness can be
formed through accurate film thickness control using ALD (Journal
of the Electrochemical Society, 149(6), pp. C306(2002)).
[0007] ALD has been applied in the display device field as well as
in the semiconductor field. Research has been conducted on ALD for
a large-sized, thin film display having good step coverage and easy
thickness control requirements. For example, for an
electroluminescence display (ELD) formed by sequentially depositing
a phosphor layer and an insulating layer, ALD involving in situ
sequential deposition of these layers within the same reactor is
preferred. An Al.sub.2O.sub.3 or an aluminum titanium oxide (ATO)
layer is mostly used for the insulating layer. An Al.sub.2O.sub.3
layer formed using ALD is known to be denser and more uniform in
thickness as compared with that formed using PVD or CVD.
[0008] Although the insulating layer deposited by ALD has a higher
density and more uniform thickness, its electrical insulating
properties should be strong enough to resist a high field strength
for use in ELDs. However, if the thickness of the insulating layer
is increased to prevent a breakdown, the threshold voltage for
electroluminescenece may increase. Therefore, what is needed in the
ELD field is a method for forming an insulating layer having a
large dielectric constant and a high breakdown voltage even with a
small thickness.
SUMMARY OF THE INVENTION
[0009] The present invention provides a method for forming an
insulating layer, and more particularly, a metal oxide layer having
a large dielectric constant and a high breakdown voltage even with
a small thickness.
[0010] According to an aspect of the present invention, there is
provided a method for incorporating nitrogen atoms into a metal
oxide thin film in situ using plasma based on conventional atomic
layer deposition (ALD). In particular, the metal oxide thin film is
formed on a substrate by supplying a metal source compound and
oxygen gas into a reactor in a cyclic fashion with sequential
alternating pulses of the metal source compound and the oxygen gas,
wherein the oxygen gas is activated into plasma in synchronization
of the pulsing thereof, and a nitrogen source gas is further
sequentially pulsed into the reactor and activated into plasma over
the substrate in synchronization with the pulsing thereof. In other
words, the invention is directed to the formation of a metal oxide
thin film containing a trace of nitrogen by plasma enhanced atomic
layer deposition (PEALD).
[0011] Since the thin film formation method according to the
present invention is based on ALD, the advantages of ALD, such as
the ability to grow a dense, uniform thin film, are ensured. In
addition, the use of plasma in the present invention further
increases the density of the thin film and the growth rate.
Furthermore, since a trace of nitrogen atoms can be incorporated in
situ into the thin film being grown, the resulting thin film is
provided with improved breakdown characteristics. The added
nitrogen atoms improve the passivation properties for the
incorporation of moist or impurities as well as the electrical
properties.
[0012] In an embodiment of the present invention, a
nitrogen-containing Al.sub.2O.sub.3 thin film may be formed. The
nitrogen-containing Al.sub.2O.sub.3 thin film according to the
present invention has a high dielectric constant and can be used as
a dielectric film for gate dielectric or memory dielectric layers
of next generation semiconductor devices. In addition, the
nitrogen-containing Al.sub.2O.sub.3 thin film can be applied to a
various kinds of electronic devices as passivation purposes in
order to prevent the incorporation of moist or impurities. In
addition, the nitrogen-containing Al.sub.2O.sub.3 thin film is very
suitable to be used as an insulating layer that is deposited on or
underneath the phosphor layer of an electroluminescence device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The above and other features and advantages of the present
invention will become more apparent by describing in detail
exemplary embodiments thereof with reference to the attached
drawings in which:
[0014] FIGS. 1 through 4 are gas pulsing diagrams applied in
forming a nitrogen-containing metal oxide film using plasma
enhanced atomic layer deposition (PEALD) according to the present
invention;
[0015] FIG. 5 is a sectional view showing an example of a
nitrogen-containing metal oxide thin film formed using the PEALD
method according to the present invention as an insulating
layer;
[0016] FIG. 6 is a sectional view showing another example of a
nitrogen-containing metal oxide thin film formed using the PEALD
method according to the present invention as an insulating
layer;
[0017] FIG. 7 is a sectional view of an electroluminescence display
that can be manufactured using the thin film formation method
according to the present invention;
[0018] FIG. 8 is a graph comparatively showing the breakdown
characteristics of a nitrogen-containing Al.sub.2O.sub.3 thin film
formed according to the present invention and an Al.sub.2O.sub.3
thin film formed by a conventional ALD; and
[0019] FIG. 9 is a graph comparatively showing the luminance of
electroluminescence devices using Al.sub.2O.sub.3 thin films
containing and not containing nitrogen, respectively.
DETAILED DESCRIPTION OF THE INVENTION
[0020] Embodiments of the present invention will be described in
detail with reference to the accompanying drawings. This invention
may, however, be embodied in many different forms and should not be
construed as being limited to the embodiments set fourth herein;
rather, these embodiments are provided so that this disclosure will
be thorough and complete, and will fully convey the concept of the
invention to those skilled in the art.
[0021] In a thin film formation method according to the present
invention, in order to form a metal oxide film on a substrate
loaded into a reactor, a metal source compound and oxygen gas as a
reactant gas are supplied into the reactor in a cyclic fashion with
sequential alternating pulses of the metal source compound and
oxygen gas, wherein the oxygen gas is activated into plasma over
the substrate in synchronization with the pulsing thereof. The
oxygen gas is decomposed into oxygen radicals or ions to activate
reaction. Besides the metal source compound and oxygen gas,
nitrogen source gas is further supplied, wherein the nitrogen
source gas is activated into plasma over the substrate in
synchronization with the pulsing thereof. A metal oxide thin film
having optimal properties can be formed by appropriately
controlling the flow rates of the nitrogen source gas and the
oxygen gas. The nitrogen source gas may be nitrogen gas (N.sub.2),
ammonia gas (NH.sub.3), nitrogen dioxide gas (NO.sub.2), nitrogen
hypooxide gase (N.sub.2O), or a mixture of the foregoing gases.
When using nitrogen gas, less nitrogen atoms are incorporated into
the metal oxide layer for the same level of RF source power as when
using ammonia gas. This is considered to be related with the fact
that ammonia is more likely to decompose than nitrogen gas for an
equal level of source power. The pulsing cycle can be varied
according to the way nitrogen source gas is added into the metal
oxide layer.
[0022] FIGS. 1 through 4 are gas pulsing diagrams applied in
forming a nitrogen-containing metal oxide film using plasma
enhanced atomic layer deposition (PEALD) according to the present
invention. A variety of pulsing cycles illustrated in FIGS. 1
through 4 include both cases of supplying source gases into the
reactor after and without dilution with inert carrier gas. Suitable
examples of carrier gases include helium gas as well as argon gas.
The carrier gas serves as a purging gas to remove the remaining
unreacted gas from the reactor while the supply of the source gases
is suspended, as well as serves as a carrier for the metal source
compound. The metal oxide may be Al.sub.2O.sub.3, Ta.sub.2O.sub.5,
TiO.sub.2, ZrO.sub.2, HfO.sub.2, or lanthanide series oxide.
Suitable metal source compounds include chlorides and organic
materials. For example, as metal source compounds,
[(Ta(OC.sub.2H.sub.5).sub.4)(OCH.sub.- 2CH.sub.2N(CH.sub.3).sub.2)]
known as TAE(dmae) may be used for a nitrogen-containing
Ta.sub.2O.sub.5 thin film, trimethylaluminum (TMA) may be used for
a nitrogen-containing Al.sub.2O.sub.3 thin film,
tetrakis(dimethylamido)titanium known as TDMAT or titanium of
tetra-isopropoxide may be used for a nitrogen-containing TiO.sub.2
thin film.
[0023] In the case illustrated in FIG. 1, after a metal source
compound is supplied into the reactor, a nitrogen source gas is
supplied in synchronization with the supply of oxygen gas as
reactant gases. In particular, under the conditions of a wafer
temperature of 250-400.degree. C. and a reactor pressure of about 3
torr, a metal precursor (metal source compound) in vapor phase is
supplied into the reactor by opening a metal source supply valve,
which is indicated as "ON" state in FIG. 1, while being diluted
with a carrier gas supplied at a flow rate of 200 sccm through the
top and/or sidewall of the reactor. After supplying the metal
source compound for about 1-2 seconds, only the metal source supply
valve is closed, which is indicated as "OFF" state in FIG. 1, while
the carrier gas is continuously supplied to purge a physisorbed
metal source compound on the wafer or the unreacted, remaining
metal source compound from the reactor.
[0024] After 2-3 seconds later, while the carrier gas is supplied
into the reactor, oxygen gas at a rate of 30-100 sccm and nitrogen
source gas at an appropriate rate are simultaneously supplied to
generate plasma of these gases in a synchronous manner. An RF
source power, for example, of 200-400W for a 12-inch wafer is
applied. The flow rate of the nitrogen source gas is adjusted
according to the kind of nitrogen source gas used, for example, to
about 5-15 sccm when nitrogen gas is selected. As described above,
these gases may be supplied while being diluted with the carrier
gas or may be supplied separately from the carrier gas. However, in
either case, the total flow rate of the carrier gas supplied into
the reactor is controlled to a large quantity, for example 500-600
sccm, but needs to be varied appropriately for different reactors.
After sustaining plasma generation for about 1-2 seconds, an oxygen
gas supply valve and a nitrogen source gas supply valve are closed,
and a source power switch is turned off, so that only the carrier
gas is supplied to purge physisorbed or unreacted remaining gases
from the reactor. After sustaining the purging duration for about
1-2 seconds, the metal source compound supply valve is opened,
thereby terminating one cycle. The duration of purging between each
supply of source and reactant gases is adjusted according to the
kind of metal source compound used. One cycle period is about 6-7
seconds. This cycle is repeated until a metal oxide thin film
having a desired thickness is obtained.
[0025] As the reactant gases are activated into plasma, reactions
with the metal source compound adsorbed on the wafer is
facilitated, and activation energy is supplied to the resulting
thin film, thereby greatly improving the crystalline and physical
properties of the film. The resulting metal oxide thin film further
contains nitrogen atoms due to the supply of the nitrogen source
gas. The nitrogen atoms in the metal oxide thin film increase the
breakdown voltage of the metal oxide thin film.
[0026] Alternatively, the oxygen gas and the nitrogen source gas
may be supplied separately to generate plasma in an asynchronous
manner, as illustrated in FIGS. 2 and 3. In the case of FIG. 2,
after the generation of oxygen plasma and purging, nitrogen source
gas plasma is generated. In the case of FIG. 3, as opposite to the
case of FIG. 2, after the generation of nitrogen source gas plasma,
oxygen plasma is generated.
[0027] The amount of nitrogen atoms incorporated into the metal
oxide thin film and its electrical properties differ according to
the kind of nitrogen source gas used, even with the application of
an equal intensity of RF source power. However, it was found that
the breakdown characteristics of the nitrogen-containing metal
oxide thin film are always better than non-nitrogen containing
metal oxide thin films. It is effective to use nitrogen gas, which
is known to be less likely to decompose than ammonia gas, in order
to incorporate a trace of nitrogen atoms into metal oxide thin
films. However, when more nitrogen atoms need to be incorporated
into a metal oxide thin film, plasma can be generated from ammonia
gas or nitrogen dioxide gas, instead of nitrogen gas.
[0028] When nitrogen dioxide or nitrogen hypooxide gas is used for
the nitrogen source gas, supplying oxygen gas to generate plasma
may be omitted because these gases inherently contain both nitrogen
and oxygen atoms, as illustrated in FIG. 4. However, as described
above with reference to FIGS. 1 through 3, the oxygen gas may be
supplied further together with or separately from nitrogen dioxide
or nitrogen hypooxide gas.
[0029] A nitrogen-containing oxide thin film according to the
present invention can be formed with uniformity in thickness and
high density, which are advantages of conventional ALD, and at high
growth rate. The high density of the insulating layer increases the
breakdown voltage, so that all pixels of an ELD can be protected
from a breakdown even at a high voltage level, thereby improving
the stability of the ELD and reducing the leakage current. When the
nitrogen-containing oxide thin film according to the present
invention, instead of an Al.sub.2O.sub.3 or ATO layer, is used as
an insulating film for an ELD device, the stability to a high
voltage is ensured, and all the pixels are highly likely to be
protected without defect. Accordingly, the thickness of the
insulating layer can be reduced, providing an effect of reducing
the threshold voltage.
[0030] In general, when using a high-dielectric thin film, the
breakdown voltage becomes low, and the leakage current becomes
high. However, these problems do not occur when using the
nitrogen-containing metal oxide thin film according to the present
invention, despite its high dielectric constant. These problems
occurring in high-dielectric oxide films, such as a gate dielectric
film or a capacitor oxide film of a memory device, can be
eliminated when the nitrogen-containing metal oxide thin film
formed using the PEALD method according to the present invention is
applied to such high-dielectric oxide films.
[0031] When a thin film is formed using plasma, the resulting thin
film becomes dense, and the breakdown voltage becomes high.
However, in ELDs, the density of interface electron traps between
the phosphor and insulating layers needs to be carefully managed
and without causing plasma damage to the interface. Therefore, it
is preferable that a nitrogen-containing metal oxide thin film
formed using the method according to the present invention, having
a multi-layered structure, as shown in FIGS. 5 and 6, be applied as
an insulating layer to be formed on the phosphor layer for an
ELD.
[0032] Referring to FIG. 5, after a phosphor layer 5 is formed on a
substrate (not shown, usually formed of an insulating material), a
buffer layer 10 is formed on the phosphor layer 5. The buffer layer
10 is a metal oxide thin film formed by general ALD without using
plasma. Accordingly, no plasma damage appears in the interface
between the phosphor layer 5 and the buffer layer 10. Next, a
nitrogen-containing metal oxide thin film 20 having good breakdown
properties is grown using PEALD. During the formation of the
nitrogen-containing metal oxide thin film 20, the phosphor layer 5
can be protected from plasma damage due to the buffer layer 10
covering the same. The buffer layer 10 and the nitrogen-containing
metal oxide thin film 20 may be grown in situ within the same
reactor. Therefore, prior to the formation of the
nitrogen-containing metal oxide layer according to the present
invention using the method as described above, the substrate may be
prepared to have a second metal oxide thin film by supplying in a
cyclic fashion sequentially alternating pulses of a second metal
source compound and oxygen gas into the reactor, followed by the
formation of the nitrogen-containing metal oxide film 20 according
to the present invention according to any pulsing scheme
illustrated in FIGS. 1 through 4.
[0033] The buffer layer 10 may be the same kind or a different kind
of metal oxide from the nitrogen-containing metal oxide layer 20
according to the present invention. Alternatively, the buffer layer
10 may be formed in combination with the metal oxide layer 20. For
example, the buffer layer 10 may be a TiO.sub.2 thin film grown
using general ALD, whereas the nitrogen-containing method oxide
thin film 20 may be a nitrogen-containing Al.sub.2O.sub.3 thin film
grown using PEALD. Alternatively, the buffer layer 10 may be an
Al.sub.2O.sub.3 thin film grown using general ALD, whereas the
nitrogen-containing metal oxide thin film 20 may be a
nitrogen-containing Al.sub.2O.sub.3 thin film grown using PEALD. In
this case, for both the buffer layer 10 and the nitrogen-containing
metal oxide thin film 20 commonly containing Al as a metal
component, TMA may be used as a common metal source compound.
[0034] For an ELD having an insulating layer underneath a phosphor
layer, the order of depositing layers is reversed with respect to
the order described with reference to FIG. 5. In particular, after
the nitrogen-containing metal oxide thin film 20 is formed, the
buffer layer 10 is grown thereon using general ALD, and then the
phosphor layer 5 is formed on the buffer layer 10. As a result, the
density of interface electron traps between the phosphor layer 5
and the buffer layer 10 can be maintained to be high.
[0035] Alternatively, the buffer layer 10 and the
nitrogen-containing metal oxide thin film 20 may be formed
alternately several times using general ALD and PEALD according to
the present invention, respectively, to have a multi-layered
structure on the phosphor layer 5, as shown in FIG. 6. The buffer
layer 10 and the nitrogen-containing metal oxide thin film 20 may
be formed of the same kind of metal oxide or different kinds of
metal oxides.
[0036] The insulating layer having such a stacked structure as
described with reference to FIGS. 5 and 6 is advantageous for the
gate dielectric layer of a semiconductor device as well as an
insulating layer for an ELD. Since the gate dielectric layer
requires good interfacial properties, it should be protected from
plasma damage. Therefore, an oxide film is formed near a wafer
using general ALD, and a nitrogen-containing metal oxide thin film
is grown on the oxide film using PEALD according to the present
invention to increase breakdown resistance. When the oxide film and
the nitrogen-containing metal oxide film are formed using
Al.sub.2O.sub.3, ZrO.sub.2, or HfO.sub.2, having a greater
dielectric constant than conventional silicon oxides, the physical
thickness of the oxide film can be increased for a small equivalent
oxide thickness of about 20 .ANG., so that it is easy to control
the thickness of the oxide film.
[0037] FIG. 7 is a sectional view of an ELD device that can be
manufactured based on the concept described above. Referring to
FIG. 7, a lower electrode 102, a lower insulating layer 120, a
buffer insulating layer 110, a phosphor layer 105, a buffer layer
10, an upper insulating layer 120, and an upper electrode 103 are
sequentially stacked on a substrate 101. As described above, the
lower and upper insulating layers 120 are nitrogen-containing metal
oxide thin films formed using the method according to the present
invention. When nitrogen gas is used as a nitrogen source gas, it
is preferable that the upper and lower insulating layers 120 be
formed as Al.sub.2O.sub.3 thin films containing nitrogen less than
1 atomic %.
[0038] The substrate 101 is preferably a glass substrate and has a
thickness of about 1 mm. The lower electrode 102 is a transparent
electrode formed of, for example, indium tin oxide (ITO), zinc
oxide (ZnO), etc., to have a thickness of about 1000-2000 .ANG..
The buffer insulating layer 110 is formed of an insulating
material, such as Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, etc.,
using general ALD, as described above. The phosphor layer 105 may
be formed of a red-yellow phosphor, such as ZnS:Mn, or a blue-green
phosphor, such as SrS:Ce or CaS:Pb. The upper electrode 103 is an
opaque metal electrode formed by depositing Al to a thickness of
about 1000-2000 .ANG.. Therefore, luminescence can be observed
through the transparent substrate 101. Alternatively, the substrate
101 may be a silicon substrate. In this case, the lower electrode
102 is an opaque metal electrode, and the upper electrode 103 is a
transparent electrode, so that luminescence can be observed through
the upper electrode 103.
[0039] An insulating layer contacting the phosphor layer in an ELD
determines the quantity of electrons entering the phosphor layer
under an electric field applied. The surface electron energy level
in the interface between the insulating layer and the phosphor
layer is a source to supply electrons into the phosphor layer. A
higher surface electron energy level results in a higher
probability of electrons entering the phosphor layer. The effective
surface electron energy level is proportional to the dielectric
constant of the insulating layer. However, when a breakdown occurs
in an insulating layer having a high dielectric constant by a high
electric field applied to induce luminescence, the breakdown
spreads, causing current leakage and dispersing the electric field.
Meanwhile, although the nitrogen-containing metal oxide thin film
according to the present invention has a high dielectric constant,
a breakdown unlikely occurs, and no damage to the electric field
occurs. This is considered because an electric path is blocked as
the trace of nitrogen atoms added binds to an oxygen network of the
oxide thin film.
[0040] Conventionally, a thick insulating layer is required to
prevent a breakdown. However, it causes the problem of an increase
in the threshold voltage of devices. However, although the
nitrogen-containing metal oxide thin film according to the present
invention is formed to be as thin as 150-160 nm for a 1 .mu.m-thick
phosphor layer, no breakdown occurs.
[0041] Experimental Example
[0042] In order to verify the improved breakdown characteristics of
the nitrogen-containing metal oxide thin film according to the
present invention, a nitrogen-containing Al.sub.2O.sub.3 thin film
was grown using PEALD. For comparison, Al.sub.2O.sub.3 thin films
containing no nitrogen were grown by ALD and PEALD, respectively.
The results are shown in FIGS. 8 and 9.
[0043] The nitrogen-containing Al.sub.2O.sub.3 thin film according
to the present invention was deposited under the following
experimental conditions. TMA was used as a metal source compound.
Argon gas was flowed at a rate of 200 sccm to carry TMA while
maintaining the total flow rate to 600 sccm. The process was
performed at an oxygen flow rate of 50 sccm, a nitrogen gas flow
rate of 5-10 sccm, an RF source power of 300 W, a reactor pressure
of 3 torr, and a temperature of 250-300.degree. C. One cycle period
was controlled to 6-7 seconds, and oxygen gas and nitrogen gas were
simultaneously supplied according to the gas pulsing scheme
illustrated in FIG. 1.
[0044] An Al.sub.2O.sub.3 thin film was grown according to the
conventional ALD method under the same conditions as for the
nitrogen-containing Al.sub.2O.sub.3 thin film according to the
present invention, except that no plasma was generated and no
nitrogen gas was supplied. In both cases, the Al.sub.2O.sub.3 thin
films were formed to a thickness of about 50 nm.
[0045] FIG. 8 is a graph comparatively showing the breakdown
characteristics of the Al.sub.2O.sub.3 thin films formed,
respectively, using the ALD and PEALD methods. In FIG. 8, graph (a)
is for the Al.sub.2O.sub.3 thin film formed using the general ALD
method. In this case, prior to the occurrence of a breakdown 30 at
an electrical field strength of 8 MV/cm, a soft breakdown 40
occurred at an electrical field strength of about 3 MV/cm. The
conventional Al.sub.2O.sub.3 thin film was formed at 250.degree. C.
When the processing temperature is increased to 300.degree. C, the
breakdown voltage decreases to 7 MV/cm. Although it depends on the
kind of precursor used and the processing conditions, a general
Al.sub.2O.sub.3 thin film formed by ALD is known to undergo a
breakdown at an electrical field strength of 5-6 MV/cm or less. In
view of this, the Al.sub.2O.sub.3 thin film formed in the present
experimental example using the ALD method for a comparison with the
nitrogen-containing Al.sub.2O.sub.3 thin film according to the
present invention is considered to have better quality than
average.
[0046] In FIG. 8, graph (b) shows the breakdown characteristics of
the nitrogen-containing Al.sub.2O.sub.3 thin film formed using the
PEALD method according to the present invention. This
nitrogen-containing Al.sub.2O.sub.3 thin film was formed at
300.degree. C. Apparently, a breakdown occurred at an electrical
field strength of about 9.5-10 MV/cm. In comparison with the
Al.sub.2O.sub.3 thin film formed at 300.degree. C. by general ALD,
the breakdown voltage of the nitrogen-containing Al.sub.2O.sub.3
thin film according to the present invention is higher than that of
the conventional Al.sub.2O.sub.3 thin film by about 2.5-3 MV/cm,
which is an increase that is almost constant over the entire area.
Accordingly, the nitrogen-containing Al.sub.2O.sub.3 thin film
according to the present invention shows stable resistance to a
breakdown at every position on the substrate. When plasma was
generated from nitrogen gas in order to form a nitrogen-containing
Al.sub.2O.sub.3 thin film, a very small amount of nitrogen, much
less than 1 atomic %, was incorporated into the resulting
nitrogen-containing Al.sub.2O.sub.3 thin film. Nevertheless, the
electrical characteristics of the nitrogen-containing
Al.sub.2O.sub.3 thin film were considerably improved. Since
nitrogen gas is so stable that it hardly decomposes at 300-400 W,
and only 1 atomic % of nitrogen is incorporated into the
nitrogen-containing Al.sub.2O.sub.3 thin film. However, when
ammonia or nitrogen dioxide gas is used as a nitrogen source gas, a
greater amount of nitrogen can be incorporated into the
nitrogen-containing Al.sub.2O.sub.3 thin film according to the
present invention for the same power level.
[0047] FIG. 9 is a graph comparatively showing the luminance of
ELDs, one having an Al.sub.2O.sub.3 thin film containing no
nitrogen and grown only using TMA and oxygen gas by PELAD, and the
other having a nitrogen-containing Al.sub.2O.sub.3 thin film
according to the present invention. In both the ELDs, ZnS:Mn was
used for the phosphor layer. The phosphor layer was formed to be as
thick as 1 .mu.m, and the Al.sub.2O.sub.3 thin film containing or
not containing nitrogen was formed to be as thin as 150-160 nm.
[0048] In FIG. 9, graph (a) is for the ELD having the
Al.sub.2O.sub.3 thin film grown using PEALD not to contain nitrogen
for a comparison with the present invention. This ELD was stable at
a voltage 20 V higher than the threshold voltage. Graph (b) is for
the ELD having the nitrogen-containing Al.sub.2O.sub.3 thin film
grown using PEALD according to the present invention. This ELD was
stable at a voltage 100 V higher than the threshold voltage. The
nitrogen-containing Al.sub.2O.sub.3 thin film according to the
present invention provides more improvements, when applied to a
device, than just improving the breakdown voltage of the film as
shown in FIG. 8. The nitrogen-containing Al.sub.2O.sub.3 thin film
increased the luminance of the ELD. Accordingly, when the
nitrogen-containing metal oxide thin film formed using the PEALD
method according to the present invention is used as an insulating
layer for an ELD, the thickness of the insulating layer can be
reduced, thereby further reducing the threshold voltage. In
contrast, when the metal oxide film containing no nitrogen is
formed on a relatively thick phosphor layer using general ALD or
PEALD, it is required to increase the thickness of the metal oxide
film to be greater than that of the nitrogen-containing metal oxide
thin film according to the present invention, in order to ensure
stable operation of the device. As a result, undesirably the
threshold voltage increases. As is evident from the above example,
the nitrogen-containing oxide thin film according to the present
invention has improved electrical characteristics, particularly, in
breakdown resistance, and can be applied to devices with improved
operational stability.
[0049] A feature of the present invention lies in the improvement
of the characteristics of films through the addition of nitrogen
into an oxide thin film. However, the various methods of adding
nitrogen in situ, as taught above, to implement the present
invention are more significant in the present invention than the
fact of adding nitrogen itself.
[0050] While the present invention has been particularly shown and
described with reference to exemplary embodiments thereof, it will
be understood by those of ordinary skill in the art that various
changes in form and details may be made therein without departing
from the spirit and scope of the present invention as defined by
the following claims.
* * * * *