U.S. patent application number 10/664002 was filed with the patent office on 2004-04-01 for semiconductor laser array and its manufacturing method, optical integrated unit and optical pickup.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. Invention is credited to Mori, Kazushige, Shiozawa, Hideo, Uchizaki, Ichiro.
Application Number | 20040062285 10/664002 |
Document ID | / |
Family ID | 16094248 |
Filed Date | 2004-04-01 |
United States Patent
Application |
20040062285 |
Kind Code |
A1 |
Uchizaki, Ichiro ; et
al. |
April 1, 2004 |
Semiconductor laser array and its manufacturing method, optical
integrated unit and optical pickup
Abstract
A semiconductor laser array including a plurality of
index-guided semiconductor lasers different in oscillation
wavelength is made by collectively controlling their double
transverse modes and collectively processing them to form their
current-blocking structures and buried layers. Thus, a
semiconductor laser having a flat element surface and excellent in
heat radiation can be made in a reduced number of manufacturing
steps. When the laser array of this multi-wavelength type and a
detector PD are mounted with a predetermined positional
relationship, return light from an optical disk can be converted
into a single point to enable detection thereof at PD on one chip.
Therefore, an optical disk driving apparatus remarkably reduced in
size and weight and having a high reliability can be realized.
Inventors: |
Uchizaki, Ichiro;
(Fujisawa-Shi, JP) ; Mori, Kazushige;
(Yokohama-Shi, JP) ; Shiozawa, Hideo;
(Yokohama-Shi, JP) |
Correspondence
Address: |
HOGAN & HARTSON L.L.P.
500 S. GRAND AVENUE
SUITE 1900
LOS ANGELES
CA
90071-2611
US
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
|
Family ID: |
16094248 |
Appl. No.: |
10/664002 |
Filed: |
September 16, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10664002 |
Sep 16, 2003 |
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09340349 |
Jun 25, 1999 |
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6646975 |
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Current U.S.
Class: |
372/50.21 ;
G9B/7.104; G9B/7.108 |
Current CPC
Class: |
H01S 5/0683 20130101;
H01S 5/34326 20130101; B82Y 20/00 20130101; H01S 5/2205 20130101;
G11B 7/123 20130101; G11B 7/1353 20130101; H01S 5/2231 20130101;
H01S 2302/00 20130101; H01L 2224/16145 20130101; H01S 5/4031
20130101; G11B 7/1275 20130101; H01S 5/02255 20210101; H01S 5/34313
20130101; H01S 5/4043 20130101; H01S 5/222 20130101; H01S 5/0234
20210101; H01S 5/4087 20130101; G11B 2007/0006 20130101; H01S
5/02216 20130101; G11B 7/131 20130101 |
Class at
Publication: |
372/050 |
International
Class: |
H01S 005/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 26, 1998 |
JP |
181068/1998 |
Claims
What is claimed is:
1. A semiconductor laser array comprising: a GaAs substrate; a
first laser element portion provided on said substrate to release
laser light of a first wavelength; and a second laser element
portion provided on said substrate to release laser light of a
second wavelength different from said first wavelength in a
direction substantially parallel to the laser light of the first
wavelength, said first laser element portion including a first
cladding layer, an active layer formed by epitaxially growing a
first semiconductor material on said first cladding layer, a second
cladding layer formed on said active layer and a current-blocking
layer to confine an electrical current injected into said first
laser element portion, said second laser element portion including
a first cladding layer, an active layer formed by epitaxially
growing a second semiconductor material on said first cladding
layer, a second cladding layer formed on said active layer and a
current-blocking layer to confine an electrical current injected
into said second laser element portion, and said current-blocking
layer of said first laser element portion and said current-blocking
layer of said second laser element portion are made of same
semiconductor material.
2. The semiconductor laser array according to claim 1 wherein said
first and second cladding layers of said first laser element
portions are made of AlGaAs, and said first and second cladding
layers of said second laser element portions are made of
InGa.sub.1-xAl.sub.xP (0<x.ltoreq.1).
3. The semiconductor laser array according to claim 1 wherein
group-V species included in said second cladding layer of said
first laser element portion is not identical to group-V species
included in said current-blocking layer of said first laser element
portion, and group-V species included in said second cladding layer
of said second laser element portion is not identical to group-V
species included in said current-blocking layer of said second
laser element portion.
4. The semiconductor laser array according to claim 3 wherein said
second cladding layers of said first and second laser element
portions are made of same semiconductor material.
5. The semiconductor laser array according to claim 4 wherein said
second cladding layers of said first and second laser element
portions are made of InGaAlP.
6. The semiconductor laser array according to claim 4 wherein said
second cladding layer of said second laser element portion is
configured as a ridge stripe extending along laser cavity
lengthwise directions and both sides of said ridge stripe is buried
by said current-blocking layer.
7. The semiconductor laser array according to claim 4 wherein said
first wavelength ranges about 780 nm as its center, and said second
wavelength ranges about one of 635 nm, 650 nm and 685 nm as its
center.
8. The semiconductor laser array according to claim 4 wherein said
active layer of said first laser element portion includes an AlGaAs
layer, and said active layer of said second laser element portion
includes an In(Ga.sub.1-yAl.sub.y)P (0.ltoreq.y.ltoreq.0.2)
layer.
9. The semiconductor laser array according to claim 8 wherein said
active layer of said first laser element portion has a bulk
structure and said active layer of said second laser element
portion has a multiple-quantum well structure.
10. A semiconductor laser array comprising: a GaAs substrate; a
first laser element portion provided on said substrate to release
laser light of a first wavelength; and a second laser element
portion provided on said substrate to release laser light of a
second wavelength different from said first wavelength in a
direction substantially parallel to the laser light of the first
wavelength, said first laser element portion including a first
cladding layer made of InGaAlP, an active layer formed on said
first cladding layer, a second cladding layer formed on said active
layer and made of InGaAlP, a stripe-shaped intermediate layer
formed on said second cladding layer and made of a semiconductor
material having a smaller band gap than said second cladding layer,
and top layer formed to cover said second cladding layer and said
intermediate layer and made of a semiconductor material having a
smaller band gap than said intermediate layer. said second laser
element portion including a first cladding layer made of InGaAlP,
an active layer formed on said first cladding layer, a second
cladding layer formed on said active layer and made of InGaAlP, a
stripe-shaped intermediate layer formed on said second cladding
layer and made of a semiconductor material having a smaller band
gap than said second cladding layer, and top layer formed to cover
said second cladding layer and said intermediate layer and made of
a semiconductor material having a smaller band gap than said
intermediate layer.
11. The semiconductor laser array according to claim 10 wherein
said second cladding layer of said second laser element portion is
configured as a ridge stripe extending along laser cavity
lengthwise directions and both sides of said ridge stripe is buried
by said top layer.
12. The semiconductor laser array according to claim 10 wherein
said first wavelength ranges about 780 nm as its center, and said
second wavelength ranges about one of 635 nm, 650 nm and 685 nm as
its center.
13. The semiconductor laser array according to claim 10 wherein
said active layer of said first laser element portion includes an
AlGaAs layer, and said active layer of said second laser element
portion includes an In(Ga.sub.1-yAl.sub.y)P (0.ltoreq.y.ltoreq.0.2)
layer.
14. A manufacturing method of a semiconductor laser array having a
GaAs substrate, a first laser element portion provided on said
substrate to release laser light of a first wavelength, and a
second laser element portion provided on said substrate to release
laser light of a second wavelength different from said first
wavelength in a direction substantially parallel to the laser light
of the first wavelength, comprising the steps of: making a
double-heterostructure of a first cladding layer, an active layer
and a second cladding layer forming said first laser element
portion in a location on a major surface of said GaAs substrate;
making a double-heterostructure of a first cladding layer, an
active layer and a second cladding layer forming said second laser
element portion on another location on said major surface of said
GaAs substrate; selectively etching said second cladding layer of
said first laser element portion and said second cladding layer of
said second laser element portion simultaneously to form stripes
extending along laser cavity lengthwise directions, respectively;
and making an element separation groove between said first laser
element portion and said second laser element portion to block an
electric current therebetween.
15. The manufacturing method of a semiconductor laser array
according to claim 14 further comprising a step of making
current-blocking layers simultaneously in said first laser element
portion and said second laser element portion between said step of
selectively etching and said step of making an element separation
groove.
16. The manufacturing method of a semiconductor laser array
according to claim 14 wherein said first wavelength is longer than
said second wavelength, and the step of making the
double-heterostructure of said first laser element portion precedes
the step of making the double-heterostructure of said second laser
element portion.
17. A manufacturing method of a semiconductor laser array having a
GaAs substrate, a first laser element portion provided on said
substrate to release laser light of a first wavelength, and a
second laser element portion provided on said substrate to release
laser light of a second wavelength different from said first
wavelength in a direction substantially parallel to the laser light
of the first wavelength, comprising the steps of: making a
double-heterostructure of a first cladding layer, an active layer
and a second cladding layer forming said first laser element
portion in a location on a major surface of said GaAs substrate;
making a double-heterostructure of a first cladding layer, an
active layer and a second cladding layer forming said second laser
element portion on another location on said major surface of said
GaAs substrate; making intermediate layers having a smaller band
gap than said second cladding layers on said second cladding layers
of said first and second laser element portions; selectively
etching said intermediate layers of said first and second laser
element portions simultaneously to form stripes extending along
laser cavity lengthwise directions, respectively; making top layers
having a smaller band gap than said intermediate layers over said
first and second laser element portions; and making an element
separation groove between said first laser element portion and said
second laser element portion to block an electric current
therebetween.
18. The manufacturing method of a semiconductor laser array
according to claim 17 wherein said first wavelength is longer than
said second wavelength, and the step of making the
double-heterostructure of said first laser element portion precedes
the step of making the double-heterostructure of said second laser
element portion.
19. An optical integrated unit comprising: a integrated laser array
including a first laser element portion and second laser element
portion integrated on a common substrate, said first laser element
portion releasing laser light of a first wavelength, said second
laser element portion releasing light of a second wavelength
different from said first wavelength in a direction substantially
parallel to the laser light of said first wavelength; and detector
means for detecting first return light which is part of the laser
light of said first wavelength reflected back in the exterior and
second return light which is part of the laser light of said second
wavelength reflected back in the exterior.
20. The optical integrated unit according to claim 19 further
comprising holographic optical element for diffracting first return
light which is part of the laser light of said first wavelength
reflected back in the exterior by a first diffraction angle and
diffracting second return light which is part of the laser light of
said second wavelength reflected back in the exterior by a second
diffraction angle different from said first diffraction angle; and
detector means for detecting said first return light and said
second return light diffracted by said holographic optical element
at a substantially common detecting position.
21. The optical integrated unit according to claim 19 wherein said
detector means includes first detector means for detecting first
return light which is part of the laser light of said first
wavelength reflected back in the exterior and second detector means
for detecting second return light which is part of the laser light
of said second wavelength reflected back in the exterior.
22. The optical integrated unit according to claim 21 further
comprising holographic optical element for diffracting first return
light which is part of the laser light of said first wavelength
reflected back in the exterior by a first diffraction angle and
diffracting second return light which is part of the laser light of
said second wavelength reflected back in the exterior by a second
diffraction angle different from said first diffraction angle, said
first detector means detecting said first return light diffracted
by said holographic optical element, said second detector means
detecting said second return light diffracted by said holographic
optical element.
23. The optical integrated unit according to claim 21 wherein said
first detector means and said second detector means are any of a
plurality of photo diodes integrated on a common substrate.
24. The optical integrated unit according to claim 19 further
comprising a third laser element portion releasing laser light of a
third wavelength.
25. The optical integrated unit according to claim 19 wherein said
laser array has: a GaAs substrate; a first laser element portion
provided on said substrate to release laser light of a first
wavelength; and a second laser element portion provided on said
substrate to release laser light of a second wavelength different
from said first wavelength in a direction substantially parallel to
the laser light of the first wavelength, said first laser element
portion including a first cladding layer, an active layer formed by
epitaxially growing a first semiconductor material on said first
cladding layer, a second cladding layer formed on said active layer
and a current-blocking layer to confine an electrical current
injected into said first laser element portion, said second laser
element portion including a first cladding layer, an active layer
formed by epitaxially growing a second semiconductor material on
said first cladding layer, a second cladding layer formed on said
active layer and a current-blocking layer to confine an electrical
current injected into said second laser element portion, and said
current-blocking layer of said first laser element portion and said
current-blocking layer of said second laser element portion are
made of same semiconductor material.
26. The optical integrated unit according to claim 19 wherein said
laser array has: a GaAs substrate; a first laser element portion
provided on said substrate to release laser light of a first
wavelength; and a second laser element portion provided on said
substrate to release laser light of a second wavelength different
from said first wavelength in a direction substantially parallel to
the laser light of the first wavelength, said first laser element
portion including a first cladding layer made of InGaAlP, an active
layer formed on said first cladding layer, a second cladding layer
formed on said active layer and made of InGaAlP, a stripe-shaped
intermediate layer formed on said second cladding layer and made of
a semiconductor material having a smaller band gap than said second
cladding layer, and top layer formed to cover said second cladding
layer and said intermediate layer and made of a semiconductor
material having a smaller band gap than said intermediate layer.
said second laser element portion including a first cladding layer
made of InGaAlP, an active layer formed on said first cladding
layer, a second cladding layer formed on said active layer and made
of InGaAlP, a stripe-shaped intermediate layer formed on said
second cladding layer and made of a semiconductor material having a
smaller band gap than said second cladding layer, and top layer
formed to cover said second cladding layer and said intermediate
layer and made of a semiconductor material having a smaller band
gap than said intermediate layer.
27. The optical integrated unit according to claim 19 further
comprising a silicon substrate having at least one step portion on
a major surface thereof, said laser array being mounted on a lower
part of said major surface at one side of said step portion of said
silicon substrate to release the laser light of said first
wavelength and the laser light of said second wavelength toward a
side surface of said step portion, said side surface of said step
portion including a reflector portion for reflecting the laser
light of said first wavelength and the laser light of said second
wavelength approximately perpendicularly upward relative to said
major surface of said substrate.
28. The optical integrated unit according to claim 19 wherein said
first wavelength ranges about 780 nm as its center, and said second
wavelength ranges about one of 635 nm, 650 nm and 685 nm as its
center.
29. An optical pickup comprising: an optical integrated unit
including a integrated laser array and detector means, said
integrated laser array including a first laser element portion and
second laser element portion integrated on a common substrate, said
first laser element portion releasing laser light of a first
wavelength, said second laser element portion releasing light of a
second wavelength different from said first wavelength in a
direction substantially parallel to the laser light of said first
wavelength, said detector means detecting first return light which
is part of the laser light of said first wavelength reflected back
in the exterior and second return light which is part of the laser
light of said second wavelength reflected back in the exterior; and
holographic optical element for diffracting first return light
which is part of the laser light of said first wavelength reflected
back in the exterior by a first diffraction angle and diffracting
second return light which is part of the laser light of said second
wavelength reflected back in the exterior by a second diffraction
angle different from said first diffraction angle.
30. An optical pickup comprising: an optical integrated unit
including a integrated laser array and detector means, said
integrated laser array including a first laser element portion and
second laser element portion integrated on a common substrate, said
first laser element portion releasing laser light of a first
wavelength, said second laser element portion releasing light of a
second wavelength different from said first wavelength in a
direction substantially parallel to the laser light of said first
wavelength, said detector means detecting first return light which
is part of the laser light of said first wavelength reflected back
in the exterior and second return light which is part of the laser
light of said second wavelength reflected back in the exterior; and
an optical system for converging laser light of a first wavelength
released from said optical integrated unit or laser light of a
second wavelength and irradiating it onto an optical disk, and for
guiding light reflected back from said optical disk to said optical
integrated unit.
Description
BACKGROUND OF THE INVENTION
[0001] This invention relates to a semiconductor laser array and
its manufacturing method, optical integrated unit, optical pickup
and optical disk driving apparatus. More specifically, the
invention relates to a semiconductor laser array for a short
wavelength band and its manufacturing method; compact
high-performance optical integrated unit, optical pickup and
optical disk driving apparatus suitable for use in a compatible
optical disk system such as DVD system ensuring compatibility with
CD or CD-R, for example, using such a laser.
[0002] Optical disk systems are under wide practical use because
they are compact but capable of recording a large amount of data.
DVD (digital versatile disc) systems, in particular, are under
rapid development toward practical use as major systems such as
next-generation movies, ROMs and RAMS. On the other hand, CD
(compact disc) systems or CD-R (compact disc-recordable) systems
have been widely diffused for years, and DVD systems are desired to
be compatible with CD systems. That is, DVD systems are required to
be capable of reading and writing data on and from CDs or
CD-Rs.
[0003] In these optical disc systems, an optical pickup using a
semiconductor laser (LD) is used to read and write information on
and from a disc.
[0004] FIG. 26 is an explanatory view showing a typical
construction proposed as an optical pickup for conventional DVD
systems. The optical pickup shown here has a compatibility with
CDs, and includes an optical integrated unit 101 for DVDs and
another optical unit 102 for CDs and CD-Rs.
[0005] Laser light of the wavelength 650 nm released from the
DVD-compatible optical integrated unit 101 passes through a
dichroic prism 103, then through a collective lens 104,
re-orienting mirror 105, wavelength selecting filter 106 and
objective lens 107, and reaches an optical disc 109. On the other
hand, laser light of the wavelength 780 nm released from the
CD-compatible optical integrated unit 102 is first reflected by the
prism 103, then travels the same path as the laser light of 650 nm
for DVDs, and reaches CD or CD-R 108.
[0006] Return light from the disc travels the optical path in the
opposite direction, and reaches the DVD-compatible optical
integrated unit 101 or CD-compatible optical integrated unit
102.
[0007] In general, since the spot size by the objective lens 107 is
slightly different between CD 108 DVD-ROM disk 109, the effective
NA (numerical aperture) is changed by using the wavelength
selecting filter 106, for example.
[0008] Next explained is a conventional optical integrated unit
used with the optical pickup shown above.
[0009] FIG. 27 is a perspective view schematically showing
construction of typical conventional optical integrated units.
Optical integrated units 101, 102 have a stem 138 and a heat sink
141 mounted thereon. Adequately provided on the stem 138 are leads
109 for predetermined electrical connection. The heat sink 141 is
made of a material having a good heat conductivity, such as copper,
and a LD chip 135 and a detecting PD (photodiode) 136 are provided
thereon. Monitoring PD 137 is provided behind the LD chip 135 to
feedback-control the LD optical output.
[0010] Above those elements, a hologram element, not shown, is
provided. A stem encapsulating cap is omitted from illustration in
FIG. 27.
[0011] Light released from the LD chip 135 in the direction shown
with an arrow in FIG. 27 reaches the disk through the path
explained with reference to FIG. 26. Return light from the disk is
diffracted by the hologram, and enters the error detecting PD 136
as shown with an arrow in FIG. 27. PD is divided into some regions
for detecting the optical focus and tracking errors on the disk.
For example, PD can be designed to equalize quantities of incident
light among respective divisional regions when the disk is
positioned at a focal point. If it moves from the focal point, then
a difference is produced in quantities of incident light among the
divisional regions. Therefore, by detecting it as a current
difference, it is fed back via a mechanical servo mechanism, not
shown, to return the disk to the focal point. Detection of errors
in radial directions also follows the same process.
[0012] The conventional optical pickup, however, involved problems,
namely, complicated construction, difficulty in reducing its size
and weight, and the need for complicated assemblage. These problems
are discussed below in greater detail.
[0013] In the conventional optical pickup shown in FIG. 26, beams
of light from two different optical integrated units 101, 102 must
be synthesized into a single optical axis because the angular
difference of light from LD relative to the optical axis of the
pickup must be maintained minimum. For this purpose, it required
optical parts like the dichroic prism 103, and this resulted in
complicating the construction, increasing the size, complicating
the assembling process and increasing the cost.
[0014] Moreover, the conventional optical pickup is subject to
degradation of the ratio of acceptable products through the
assembling process because of the need for the process of adjusting
optical axes of two different optical integrated units 101, 102
used therein. That is, also for the positional accuracy (X, Y,
.theta.) of return light from the disk (diffracted light from the
hologram), there is a strict requirement. Especially in DVD, the
positional accuracy is desired to be within .+-.5 .mu.m,
.+-.0.5.degree. between LD and PD. Even if the light from LD is
within a desired accuracy, expected characteristics are not
obtained unless relative positions of PD and LD in each optical
integrated unit are held within the above-mentioned acceptable
range. That is, since bifurcated optical integrated units are used,
relative positional accuracy must be sufficiently high between two
LDs and two PDs. The increased number of steps for adjustment
required to realize it and degradation in the ratio of acceptable
products of the pickup through assemblage are serious problems.
[0015] Furthermore, the use of two divisional optical integrated
units limits miniaturization of the entirety. Especially when DVD
systems are mounted inportable personal computers whose demand is
expected to greatly grow in the future, reduction of the size and
the weight is indispensable. However, it has been significantly
difficult to reduce the size and the weight with the conventional
structure as shown in FIG. 26.
SUMMARY OF THE INVENTION
[0016] It is therefore an object of the invention to provide a
high-performance semiconductor laser array of a multi-wavelength
type and its manufacturing method, and to provide a compact,
high-performance optical integrated unit , optical pickup and
optical disk driving apparatus which can be realized by using such
semiconductor lasers.
[0017] According to the invention, there is provided a
semiconductor laser array comprising: a GaAs substrate; a first
laser element portion provided on said substrate to release laser
light of a first wavelength; and a second laser element portion
provided on said substrate to release laser light of a second
wavelength different from said first wavelength in a direction
substantially parallel to the laser light of the first wavelength,
said first laser element portion including a first cladding layer,
an active layer formed by epitaxially growing a first semiconductor
material on said first cladding layer, a second cladding layer
formed on said active layer and a current-blocking layer to confine
an electrical current injected into said first laser element
portion, said second laser element portion including a first
cladding layer, an active layer formed by epitaxially growing a
second semiconductor material on said first cladding layer, a
second cladding layer formed on said active layer and a
current-blocking layer to confine an eletrical current injected
into said second laser element portion, and said current-blocking
layer of said first laser element portion and said current-blocking
layer of said second laser element portion are made of same
semiconductor material.
[0018] According to the invention, there is further provided a
semiconductor laser array comprising:
[0019] a GaAs substrate;
[0020] a first laser element portion provided on said substrate to
release laser light of a first wavelength; and
[0021] a second laser element portion provided on said substrate to
release laser light of a second wavelength different from said
first wavelength in a direction substantially parallel to the laser
light of the first wavelength,
[0022] said first laser element portion including a first cladding
layer made of InGaAlP, an active layer formed on said first
cladding layer, a second cladding layer formed on said active layer
and made of InGaAlP, a stripe-shaped intermediate layer formed on
said second cladding layer and made of a semiconductor material
having a smaller band gap than said second cladding layer, and top
layer formed to cover said second cladding layer and said
intermediate layer and made of a semiconductor material having a
smaller band gap than said intermediate layer.
[0023] said second laser element portion including a first cladding
layer made of InGaAlP, an active layer formed on said first
cladding layer, a second cladding layer formed on said active layer
and made of InGaAlP, a stripe-shaped intermediate layer formed on
said second cladding layer and made of a semiconductor material
having a smaller band gap than said second cladding layer, and top
layer formed to cover said second cladding layer and said
intermediate layer and made of a semiconductor material having a
smaller band gap than said intermediate layer.
[0024] According to the invention, there is further provided a
manufacturing method of a semiconductor laser array having a GaAs
substrate, a first laser element portion provided on said substrate
to release laser light of a first wavelength, and a second laser
element portion provided on said substrate to release laser light
of a second wavelength different from said first wavelength in a
direction substantially parallel to the laser light of the first
wavelength, comprising the steps of:
[0025] making a double-heterostructure of a first cladding layer,
an active layer and a second cladding layer forming said first
laser element portion in a location on a major surface of said GaAs
substrate;
[0026] making a double-heterostructure of a first cladding layer,
an active layer and a second cladding layer forming said second
laser element portion on another location on said major surface of
said GaAs substrate;
[0027] selectively etching said second cladding layer of said first
laser element portion and said second cladding layer of said second
laser element portion simultaneously to form stripes extending
along laser cavity lengthwise directions, respectively; and
[0028] making an element separation groove between said first laser
element portion and said second laser element portion to block an
electric current therebetween.
[0029] According to the invention, there is further provided a
manufacturing method of a semiconductor laser array having a GaAs
substrate, a first laser element portion provided on said substrate
to release laser light of a first wavelength, and a second laser
element portion provided on said substrate to release laser light
of a second wavelength different from said first wavelength in a
direction substantially parallel to the laser light of the first
wavelength, comprising the steps of:
[0030] making a double-heterostructure of a first cladding layer,
an active layer and a second cladding layer forming said first
laser element portion in a location on a major surface of said GaAs
substrate;
[0031] making a double-heterostructure of a first cladding layer,
an active layer and a second cladding layer forming said second
laser element portion on another location on said major surface of
said GaAs substrate;
[0032] making intermediate layers having a smaller band gap than
said second cladding layers on said second cladding layers of said
first and second laser element portions;
[0033] selectively etching said intermediate layers of said first
and second laser element portions simultaneously to form stripes
extending along laser cavity lengthwise directions,
respectively;
[0034] making top layers having a smaller band gap than said
intermediate layers over said first and second laser element
portions; and
[0035] making an element separation groove between said first laser
element portion and said second laser element portion to block an
electric current therebetween.
[0036] When the first wavelength is longer than the second
wavelength, the step of making the double-heterostructure of the
first laser element portion preferably precede the step of making
the double-heterostructure of the second laser element portion.
[0037] The second cladding layer of the first laser element portion
may have a p-type conduction type and its p-type carrier density is
preferably not larger than 8.times.10.sup.17 cm.sup.-3.
[0038] The step of making the stripes may include a step of
selective etching terminated at etching stop layers provided in the
first laser element portion and the second laser element portion,
respectively.
[0039] The first wavelength may range about 780 nm as its center,
and the second wavelength may range about one of 635 nm or 650 nm
as its center.
[0040] According to the invention, there is further provided an
optical integrated unit comprising: a integrated laser array
including a first laser element portion and second laser element
portion integrated on a common substrate, said first laser element
portion releasing laser light of a first wavelength, said second
laser element portion releasing light of a second wavelength
different from said first wavelength in a direction substantially
parallel to the laser light of said first wavelength; and detector
means for detecting first return light which is part of the laser
light of said first wavelength reflected back in the exterior and
second return light which is part of the laser light of said second
wavelength reflected back in the exterior.
[0041] According to the invention, there is further provided an
optical integrated unit comprising: a first laser element portion
releasing laser light of a first wavelength; a second laser element
portion releasing light of a second wavelength different from the
first wavelength in a direction substantially parallel to the laser
light of the first wavelength; and
[0042] holographic optical element for diffracting first return
light which is part of the laser light of the first wavelength
reflected back in the exterior by a first diffraction angle and
diffracting second return light which is part of the laser light of
the second wavelength reflected back in the exterior by a second
diffraction angle different from the first diffraction angle; and
detector means for detecting the first return light and the second
return light diffracted by the holographic optical element at a
substantially common detecting position.
[0043] According to the invention, there is further provided an
optical integrated unit comprising: a first laser element portion
releasing laser light of a first wavelength; a second laser element
portion releasing light of a second wavelength different from the
first wavelength in a direction substantially parallel to the laser
light of the first wavelength; first detector means for detecting
first return light which is part of the laser light of the first
wavelength reflected back in the exterior; and second detector
means for detecting second return light which is part of the laser
light of the second wavelength reflected back in the exterior.
[0044] According to the invention, there is further provided an
optical integrated unit comprising: a first laser element portion
releasing laser light of a first wavelength; a second laser element
portion releasing light of a second wavelength different from the
first wavelength in a direction substantially parallel to the laser
light of the first wavelength; and
[0045] holographic optical element for diffracting first return
light which is part of the laser light of the first wavelength
reflected back in the exterior by a first diffraction angle and
diffracting second return light which is part of the laser light of
the second wavelength reflected back in the exterior by a second
diffraction angle different from the first diffraction angle; first
detector means for detecting the first return light diffracted by
the holographic optical element; and second detector means for
detecting the second return light diffracted by the holographic
optical element.
[0046] The first detector means and the second detector means may
be any of a plurality of photo diodes integrated on a common
substrate.
[0047] Any of the optical integrated elements summarized above may
further comprise a third laser element portion releasing laser
light of a third wavelength.
[0048] The first laser element portion and the second laser element
portion may form a laser array integrated on a common
substrate.
[0049] The laser array may be a semiconductor laser array recited
in one of claims 1 to 5.
[0050] The optical integrated unit summarized above may further
comprise a silicon substrate having at least one step portion on a
major surface thereof, the laser array being mounted on a lower
part of the major surface at one side of the step portion of the
silicon substrate to release the laser light of the first
wavelength and the laser light of the second wavelength toward a
side surface of the step portion, the side surface of the step
portion including a reflector portion for reflecting the laser
light of the first wavelength and the laser light of the second
wavelength approximately perpendicularly upward relative to the
major surface of the substrate.
[0051] The holographic optical element may have a hologram
element.
[0052] The first wavelength may range about 780 nm as its center,
and the second wavelength may range about one of 635 nm, 650 nm and
685 nm as its center.
[0053] According to the invention, there is further provided an
optical pickup comprising: an optical integrated unit including a
integrated laser array and detector means, said integrated laser
array including a first laser element portion and second laser
element portion integrated on a common substrate, said first laser
element portion releasing laser light of a first wavelength, said
second laser element portion releasing light of a second wavelength
different from said first wavelength in a direction substantially
parallel to the laser light of said first wavelength, said detector
means detecting first return light which is part of the laser light
of said first wavelength reflected back in the exterior and second
return light which is part of the laser light of said second
wavelength reflected back in the exterior; and holographic optical
element for diffracting first return light which is part of the
laser light of said first wavelength reflected back in the exterior
by a first diffraction angle and diffracting second return light
which is part of the laser light of said second wavelength
reflected back in the exterior by a second diffraction angle
different from said first diffraction angle. According to the
invention, there is further provided an optical pickup comprising:
an optical integrated unit including a integrated laser array and
detector means, said integrated laser array including a first laser
element portion and second laser element portion integrated on a
common substrate, said first laser element portion releasing laser
light of a first wavelength, said second laser element portion
releasing light of a second wavelength different from said first
wavelength in a direction substantially parallel to the laser light
of said first wavelength, said detector means detecting first
return light which is part of the laser light of said first
wavelength reflected back in the exterior and second return light
which is part of the laser light of said second wavelength
reflected back in the exterior; and an optical system for
converging laser light of a first wavelength released from said
optical integrated unit or laser light of a second wavelength and
irradiating it onto an optical disk, and for guiding light
reflected back from said optical disk to said optical integrated
unit.
[0054] According to the invention, there is further provided an
optical disk driving apparatus comprising one of optical pickups
summarized above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0055] The present invention will be understood more fully from the
detailed description given herebelow and from the accompanying
drawings of the preferred embodiments of the invention. However,
the drawings are not intended to imply limitation of the invention
to a specific embodiment, but are for explanation and understanding
only.
[0056] In the drawings:
[0057] FIG. 1 is a diagram schematically showing the optical system
of an optical pickup according to the invention;
[0058] FIGS. 2A and 2B are diagrams schematically showing
constructions of optical systems employable as the optical
integrated unit according to the invention;
[0059] FIGS. 3A and 3B are schematic diagrams for explaining the
optical path in the optical integrated unit according to the
invention, in which FIG. 3A shows the aspect of light diffracted by
a typical hologram element, and FIG. 3B shows the optical path in
the optical integrated unit according to the invention;
[0060] FIG. 4A is a schematic plan view of a photodetector PD 35,
and FIG. 4B is a schematic plan view of the hologram element
33;
[0061] FIG. 5 is a perspective view schematically showing
construction of a central part of the optical integrated unit
according to the invention;
[0062] FIG. 6 is a perspective view schematically showing such an
upside-down mounted configuration;
[0063] FIGS. 7A and 7B are diagrams schematically showing the third
examples of the invention;
[0064] FIG. 8 is an exploded perspective view of a central part of
an optical integrated unit taken as a fourth example of the
invention, combined with an enlarged perspective view of its
substrate portion;
[0065] FIG. 9 is a cross-sectional view showing construction of a
semiconductor laser array according to the invention;
[0066] FIG. 10 is a cross-sectional view schematically showing a
process in a manufacturing method of a semiconductor laser array
according to the invention;
[0067] FIG. 11 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0068] FIG. 12 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0069] FIG. 13 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0070] FIG. 14 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0071] FIG. 15 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0072] FIG. 16 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0073] FIG. 17 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0074] FIG. 18 is a cross-sectional view schematically showing a
process in the manufacturing method of the semiconductor laser
array according to the invention;
[0075] FIG. 19 is a diagram schematically showing the mounted
aspect of the semiconductor laser array according to the
invention;
[0076] FIGS. 20A and 20B are graphs showing current-optical output
characteristics and oscillation spectrums of a laser element
portion for the wavelength 780 nm in the semiconductor laser array
according to the invention;
[0077] FIGS. 21A and 21B are graphs showing current-optical output
characteristics and oscillation spectrums of a laser element
portion for the wavelength 750 nm in the semiconductor laser array
according to the invention;
[0078] FIGS. 22A and 22B are graphs showing current-optical output
characteristics and oscillation spectrums of the oscillation
wavelength 780 nm in a semiconductor laser array, taken as another
example of the invention;
[0079] FIGS. 23A and 23B are graphs showing current-optical output
characteristics and oscillation spectrums of the oscillation
wavelength 780 nm in the semiconductor laser array;
[0080] FIGS. 24A through 24E are cross-sectional views showing
construction of other examples of the invention.;
[0081] FIG. 25 is a block diagram of the optical disk driving
apparatus according to the invention;
[0082] FIG. 26 is an explanatory view showing a typical
construction proposed as an optical pickup for conventional DVD
systems;
[0083] FIG. 27 is a perspective view schematically showing
construction of typical conventional optical integrated units;
and
[0084] FIGS. 28A and 28B are schematic cross-sectional views of a
2-beam laser array as a comparative example; and
[0085] FIG. 29 is a schematic cross-sectional view of a 2-beam
laser array as an another comparative example.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0086] The invention provides a semiconductor laser array of a
multi-wavelength type having a unique structure, and its
manufacturing method. Additionally, the invention provides
compatible optical integrated unit, optical pickup and DVD system
which need less number of parts than conventional ones and can be
remarkably reduced in size and weight by using the semiconductor
laser array.
[0087] Description is started below with explanation of an optical
pickup and an optical integrated units according to the invention,
and description will be continued on a semiconductor laser array
and its manufacturing method according to the invention. Finally,
an optical disk driving apparatus according to the invention will
be explained.
[0088] Embodiments of the invention are explained below with
reference to the drawings.
[0089] FIG. 1 is a diagram schematically showing the optical system
of an optical pickup according to the invention. In this
embodiment, laser light of the wavelength 650 nm or 635 nm for DVD
and laser light of the wavelength 780 nm for CD and CD-R are
released from a single optical integrated unit 11. These beams of
laser light travel through the collimator lens 14, re-orienting
mirror 15, wavelength selecting filter 16 and objective lens 17,
and reaches CD 18 or DVD disc 19.
[0090] The collimator lens 14 is a convex lens for converging LD
light, and its NA may be usually within 0.1 to 0.15. The objective
lens 12 functions to converge LD light onto the disc.
[0091] Comparing the optical pickup according to the invention with
the conventional structure shown in FIG. 26, it is apparent that
the optical system is much simpler because a single optical
integrated unit is used.
[0092] FIGS. 2A and 2B are diagrams schematically showing
constructions of optical systems employable as the optical
integrated unit according to the invention. In these drawings, the
portion shown by the broken line is the optical integrated unit 11.
The optical integrated unit 11 includes LD 31 and detector PD 35.
In FIG. 2A, the optical integrated unit also includes holographic
optical element 33. LD 31 releases laser light of two wavelengths,
650 nm and 780 nm.
[0093] The holographic optical element 33, i.e. the hologram
element system, may be integral with the optical integrated unit 11
as shown in FIG. 2A or may be a separate member from the optical
integrated unit 11 as shown in FIG. 2B. For example, it may be
interposed between the collimator lens 14 and the re-orienting
mirror 15, between the re-orienting mirror 15 and the filter 16 or
between the filter 16 and the objective lens 17, for example. In
the explanation made below, however, the hologram element is
integral with the optical integrated unit 11. For simplification,
explanation is made as omitting the quarter wavelength plate.
[0094] The hologram element usable in this embodiment permits light
from LD to pass therethrough, diffracts diffracted light of a
certain order in return light from the disk to a target position of
detector PD 35, and converges it by the function of the collimate
lens 14. Usable as the hologram element is a micro diffraction
grating having a transfer function so designed that incident light
onto a predetermined position of its surface be diffracted to a
target point on PD. Its pitch need not be uniform.
[0095] Detector PD 35 has a plurality of divisional photodetective
regions, which will be explained later in greater detail, and can
detect focus errors and tracking errors as well. In the illustrated
example, both the laser light of 780 nm and the laser light of 650
nm are detected by the same detector PD 35.
[0096] Laser light released from LD 31 passes through the hologram
element 33 and exits from the optical integrated element 11. It is
then converged by the collimator lens 14 and enters the objective
lens 17 through an optical system, not shown. In FIGS. 2A and 2B, X
denotes a row of track pits of the disk, and Y denotes a radial
direction of the disk.
[0097] Return light reflected from the disk and travelling the path
in the opposite direction is diffracted by the hologram element 33
and enters into the detector PD 35.
[0098] Function of the optical integrated unit 11 is next explained
quantitatively.
[0099] FIGS. 3A and 3B are schematic diagrams for explaining the
optical path in the optical integrated unit according to the
invention. FIG. 3A shows the aspect of light diffracted by a
typical hologram element, and FIG. 3B shows the optical path in the
optical integrated unit according to the invention.
[0100] As shown in FIG. 3A, the hologram element 33 has a
diffraction grating having formed periodic grooves on the surface
of a transparent material like glass. Explanation is made below on
an example in which return light RL from the optical disk, not
shown, enters downward in the figure. In this case, there is a
0-th-order optical component TL passing through the hologram
element 33 and travelling straight. Simultaneously, there are
diffracted light components DLM and DLP diffracted by the hologram
element. Its diffraction angle .theta. is expressed as
sin.theta.=n.lambda./d (1)
[0101] where d is the pitch of the diffraction grating is d, and
.lambda. is the wavelength of the laser light. n is an integer and
called "order of diffraction". In FIGS. 3A and 3B, lights generated
by the first-order diffraction, namely, diffraction of n=1, are
shown as DLM and DLP.
[0102] Next explained is the optical path in the optical integrated
unit according to the invention with reference to FIG. 3B. Here is
shown an example using laser light L2 of the wavelength 650 nm for
DVD discs and laser light L1 of the wavelength 780 nm for CDs (and
CD-Rs). Beams of light of these wavelengths are released from LD
31. LD 31 is a semiconductor laser element having two cavities
aligned in parallel with a predetermined distance as explained
later in greater detail. Laser lights L1 and L2 from LD 31 pass
through the hologram element 33 and reaches the disk, not shown.
Respective elements are positioned to ensure that return light from
the disk passes through the hologram element 33, and a first-order
diffraction light therein returns to the predetermined position of
the detector PD 35. The optical system of the collimator lens 14
and the re-orienting mirror 15 as shown in FIGS. 1, 2A and 2B are
omitted here for simplicity. Actually, however, the hologram
element 33 may be interposed between LD 31 and collimator lens 14,
between the collimator lens 14 and the re-orienting mirror 15 or
between the re-orienting mirror 15 and the objective lens 17.
[0103] As shown in FIG. 3B, when return lights RL1 and RL2 are
diffracted by the hologram element 33, the diffraction angle of the
laser light RL1 of 780 nm is larger than that of the laser light
RL2 of 650 nm as apparent from Equation (1). Therefore, by locating
the beam center of the 780 nm light (31B) and the photodetector PD
35 in opposite sides of the beam center of the 650 nm light (31A)
and by appropriately determining their positional relation and the
pitch of the diffraction grating, it is imaging positions near
focal points of beams of both wavelengths can be brought into
coincidence. That is, the diffracted beams DL1P and DL2P can be
converged onto the same position on the detector PD 35.
[0104] In a typical example determining the distance between LD
beams as 200 .mu.m, the distance between the beam center 31A of the
650 nm light and the center of the photodetector PD 35 as 800
.mu.m, the interval between LD and the hologram element 33 as 5 mm,
the minimum pitch of the diffraction grating of the hologram
element 33 may be determined as 3 .mu.m. However, the invention is
not limited to this particular construction, but the LD beam
distance, the positional relation with the photodetector PD 35, and
so on, can be chosen appropriately.
[0105] However, in order to ensure practical values of the pitch of
the diffraction grating, positional relation between LD 31 and
photodetector PD 35, and so forth, the distance between the beam
centers 31A and 31B of LD 31 should be within decades to hundreds
of .mu.m, approximately. For this purpose, a plurality of LD chips
may be aligned. However, it is not easy to align a plurality of LD
chips with such a fine distance. Furthermore, it is not easy to
bring optical axes of respective LD chips into coincidence.
Therefore, in the optical integrated unit according to the
invention, it is preferable to use a laser array integrating two or
more different kinds of cavities in a single LD chip. As will be
explained later in greater detail, by using a semiconductor laser
array according to the invention, an optical integrated unit
according to the invention can be realized very easily.
[0106] Next explained is the photodetector PD.
[0107] FIG. 4A is a schematic plan view of the photodetector PD 35.
The photodetector PD 35 is divided into a plurality regions as
illustrated. By employing this PD, a method relying astigmatism can
be used for detecting focus errors. For detecting tracking errors,
a phase contrast detecting method can be used. Assume, for example,
that photodetective currents Ia, Ib, Ic and Id are generated in the
four divisional regions 35a, 35b, 35c and 35d of the photodetector
PD 35, respectively. Then, tracking errors can be detected through
a phase contrast between (Ib+Ic) and (Ia+Id). Focus errors can be
detected by a positive or negative value of (Ib+Ic)-(Ia+Id).
Needless to say, also usable are a 3-beam method, push-pull method
for detecting tracking errors, Foucault method and spot size
detection for detecting focus errors.
[0108] The RF signal as the data signal read out from the disc is
normally (Ia+Ib+Ic+Id).
[0109] FIG. 4B is a schematic plan view of the hologram element 33.
The hologram element 33 may be divided into a plurality regions in
this fashion. Respective divisional regions may be slightly offset
in their diffraction gratings from each other. With the hologram
element 33 divided into a plurality of regions, even when the
optical axes deviate or the disk inclines, one or some of the
divisional regions can diffract return light, and can converge it
onto the detector PD. That is, the allowance for deviation of
optical axes, for example, can be enlarged. The dividing lines may
be perpendicular to the tracks 10 shown in FIG. 2. In this manner,
the allowance for axial deviation and inclination of the disc, for
example, can be improved.
[0110] FIG. 5 is a perspective view schematically showing
construction of a central part of the optical integrated unit
according to the invention. A heat sink 41 is fixed on a stem
substrate 38, and LD 31 is mounted on a side surface of the heat
sink 41 by soldering, for example. Detector PD 35 is mounted on the
heat sink 41. The substrate 38 is made of KOVAR, for example, and
the heat sink 41 is made of copper (Cu) or tungsten-copper (W--Cu)
alloy, for example. A monitor PD 37 is provided behind LD 31 to
control monitor output from LD 31 and feedback control it. Formed
on the substrate 38 are appropriate air-tight encapsulating
electrode leads 39, and they are adequately connected to LD 31, PD
35 and 37 by wires, not shown.
[0111] As illustrated, laser light 31A and laser light 31B of two
different wavelengths are released from LD 31. In order to fix LD
31 to the heat sink 41, angular deviation of these light beams is
preferably held not larger than .+-.0.5.degree.. The monitor PD 37
can be commonly used because LD 31 need not simultaneously release
two laser beams different in wavelength.
[0112] A light beam released from LD 31 and travelling through an
optical system, not shown, is reflected by the disk, and its return
light is diffracted by a hologram element, not shown, and its
first-order diffraction light returns to the detector PD 35. In DVD
systems having small track pitches, the requirement for accuracy of
relative positions (X, Y, .theta.) between LD 31 and PD 35 is
severe, and they are preferably held within .+-.5 .mu.m,
0.5.degree.. After these elements are assembled into the form shown
in FIG. 5, wires, not shown, are connected, and the structure is
enclosed by a cap.
[0113] The hologram element 33 shown in FIGS. 4A, 4B and others is
next bonded on the cap with a sufficient positional accuracy
relative to the detector PD 35. However, as explained before, the
hologram element 33 may be located at a position distant from the
cap, namely, before or after the collimator lens 14, or before or
after the objective lens 17.
[0114] In the example shown in FIG. 5, LD 35 is bonded to the heat
sink 41 with one side of its common n-electrode. However, taking
account for the temperature property of 650 nm light for DVDS
having a small margin, it is advantageous to improve the heat
radiation property of LD 31 as far as possible. For this purpose,
LD may be bonded to the heat sink 41 with another side of its
p-electrode which is nearer to the light emitting portion.
[0115] FIG. 6 is a perspective view schematically showing such an
upside-down mounted configuration. In the example shown here, LD 31
is mounted in an upside-down configuration via a substrate 50. The
substrate 50 is preferably insulating and good in heat conduction.
A desirable material thereof is aluminum nitride (AlN). In this
case, p-side and n-side electrodes of LD 31 are connected to leads
39 by wires W, respectively.
[0116] Next explained are third examples of the present
invention.
[0117] FIGS. 7a and 7B are diagrams schematically showing the third
examples of the invention. FIG. 7A shows an example in which two
beams 31A and 31B from LD 31' are brought closer to 50 .mu.m. This
is optically preferable because emission points of two beams may be
much closer as compared with the construction shown in FIGS. 4A and
4B, and both beams can be converged easily. However, as to return
light from the disk, not shown, since it expands due to differences
in diffraction angle of the hologram element 33, it does not make a
single projection point on the detector PD 35', and it becomes
difficult to receive light as a single PD pattern. Therefore, the
use of a plurality of PDs as illustrated is preferable. FIG. 7B
shows an example having two PD patterns 35A, 35B on a single
silicon substrate 35'. Each of the PD patterns 35A, 35B is divided
into four photodetective regions a through d. The use of a
plurality of PD patterns on a single silicon substrate is easy from
both the technical and economical viewpoints, and does not disturb
practical use of this example.
[0118] In the example shown in FIGS. 7A and 7B, PD 35A for 650 nm
and PD 35B for 780 nm are made on the single silicon substrate 35'.
However, the same purpose is attained by making them as separate
chips. In a specific numerical example, the distance between the
650 nm beam center 31A and the center of the 650 nm PD 35A is
approximately 1.1 mm, the distance between the 650 nm beam center
31A and the center of the 780 nm PD 35B is about 1.3 mm, the
minimum pitch of the diffraction grating of the hologram element 33
is about 3 .mu.m, and the distance of LD 31' and the hologram
element 33 is about 5 mm.
[0119] Further, by appropriately determining the distance between
the hologram element 33 and LD 31 and the pitch of the hologram
element 33, both of the beam centers 31A and 31B can be adjusted to
650 nm or 780 nm.
[0120] Next explained is a fourth example of the invention.
[0121] FIG. 8 schematically shows the fourth example of the
invention. FIG. 8 is an exploded perspective view of a central part
of the optical integrated unit according to the invention, combined
with an enlarged perspective view of its substrate portion. In this
example, a recess 60C is made on the major surface of the substrate
60, and LD 31 is mounted on its bottom. Beams L1 and L2 from LD 31
are reflected and re-oriented upward by a mirror M formed on a side
surface of the recess 60C. These laser beams L1 and L2 pass through
the hologram element 33, travel through an optical system, not
shown, and enter into the disk. Return lights DLP from the disk is
diffracted by the hologram element 33, and enters into the detector
PD 35 provided on the substrate 60. The substrate 60 may be made of
silicon, for example, and its (111) plane made by etching, for
example, may be made as the mirror M.
[0122] Also in this example, by appropriately positioning LD 31 and
other elements similarly to those of the foregoing examples, the
optical system as shown in FIGS. 4A and 4B or FIGS. 7A and 7B can
be realized.
[0123] This example enables realization of a very thin, compact
optical integrated unit including a package PKG.
[0124] Heretofore explained are optical integrated units and
optical pickup apparatuses according to the invention by way of
specific examples. In these examples, a single LD chip functions as
two cavities. However, also usable is an element integrating three
cavities, for example, on a single LD chip. One of such examples is
LD integrating three kinds of elements for 650 nm light for
DVD-ROM, 635 nm light for DVD-ROM, and 780 nm light for CD-ROM and
CD-R. Another example is LD incorporating three kinds of elements
for 650 nm light for DVD-ROM, 650 nm light for DVD-RAM (high-output
light for writing) and 780 nm light for CD-ROM and CD-R. Still
another example is LD integrating three kinds of elements for 650
nm light for DVD-ROM, 780 nm light for (CD-ROM and CD-R (light for
reading) and 780 nm light for CD-R and CD-RW (high-output light for
writing).
[0125] Further, if LD of a wavelength band near 685 nm,
compatibility with rewritable optical disk systems of a
magnet-optic type or a phase change type can be ensured.
[0126] Next made is detailed explanation on LD, i.e. integrated
semiconductor laser array, according to the invention.
[0127] FIG. 9 is a schematic cross-sectional view of an integrated
semiconductor laser array according to the invention. The
semiconductor laser array shown here includes cavities for emitting
light of 650 nm and light of 780 nm, respectively, integrated on a
common GaAs substrate 210. The essence of the invention lies in
enabling collective execution of the process for controlling
transverse modes of respective integrated lasers, process for
making current-blocking structures and process for burying them by
making double-heterostructures having different parameters in
different regions on a semiconductor substrate and designing upper
portions of cladding layers of the double-heterostructures in
respective regions substantially commonly.
[0128] The laser array includes a GaAs substrate 210, a first laser
element portion 240 provided on said substrate 210 to release laser
light of a first wavelength and a second laser element portion 241
provided on said substrate 210 to release laser light of a second
wavelength different from said first wavelength in a direction
substantially parallel to the laser light of the first
wavelength.
[0129] The first laser element portion 240 includes a first
cladding layer 212, an active layer 214 formed by epitaxially
growing a first semiconductor material on said first cladding layer
212, a second cladding layer 216 and 218 formed on the active layer
214 and a current-blocking layer 231 to confine an electrical
current injected into the first laser element portion 240.
[0130] The second laser element portion 241 includes a first
cladding layer 222, an active layer 224 formed by epitaxially
growing a second semiconductor material on the first cladding layer
222, a second cladding layer 226 and 228 formed on the active layer
224 and a current-blocking layer 231 to confine an electrical
current injected into the second laser element portion 241.
[0131] The current-blocking layer 231 of the first laser element
portion 240 and the current-blocking layer 231 of the second laser
element portion 241 are made of same semiconductor material.
[0132] The first and second cladding layers 212, 216, 218, 222, 226
and 228 of the first and second laser element portions may be made
of AlGaAs, and the current-blocking layers 231, 231 of the first
and second laser element portions 240 and 241 may be made of
GaAs.
[0133] The group-V species included in the second cladding layer
216 and 218 of said first laser element portion 240 may not be
identical to group-V species included in the current-blocking layer
231, and group-V species included in the second cladding layer 226
and 228 of the second laser element portion 241 may not be
identical to group-V species included in the current-blocking layer
231.
[0134] The first and second cladding layers 212, 216 and 218 of
said first laser element portion 240 and said first and second
cladding layers 222, 226 and 228 of said second laser element
portion 241 may be made of same semiconductor material.
[0135] The first and second cladding layers 212, 216, 218, 222, 226
and 228 of said first and second laser element portions may be made
of InGaAlP or InAlP.
[0136] The second cladding layer 228 of the second laser element
portion 241 may be configured as a ridge stripe extending along
laser cavity lengthwise directions and both sides of the ridge
stripe is buried by the current-blocking layer 231.
[0137] The first wavelength may range about 780 nm as its center,
and said second wavelength may range about one of 635 nm, 650 nm
and 685 nm as its center.
[0138] The active layer 214 of the first laser element portion 240
may include an AlGaAs layer, and the active layer 224 of the second
laser element portion 241 may include an InGaP or InGaAlp
layer.
[0139] The active layer 224 of the second laser element portion 241
may include an In.sub.0.5(Ga.sub.1-xAl.sub.x).sub.0.5P
(0.ltoreq.x.ltoreq.0.2) layer.
[0140] The active layer 214 of the first laser element portion 240
may have a bulk structure and the active layer 224 of the second
laser element portion 241 may have a multiple-quantum well
structure.
[0141] The second cladding layer 216 and 28 of the first laser
element portion may have a p-type conduction type and its p-type
carrier density is preferably not larger than 8.times.10.sup.17
cm.sup.-3.
[0142] When the average value of the fist wavelength and the second
wavelength is .lambda., a dielectric film of a semiconductor film
with the thickness of .lambda./2 or .lambda./4 may be formed on
facets of the first laser element portion and facets of the second
laser element portion, respectively.
[0143] The above-described features can be realized by the best use
of the latest MOCVD technology and microprocessing technology. It
is particularly important to increase the temperature
controllability during crystal growth and to accurately control gas
flows.
[0144] Explained below is such an integrated laser array according
to an embodiment of the invention in detail, comparing with a
comparative examples.
[0145] FIG. 9 is a cross-sectional view showing construction of a
semiconductor laser array for two beams of oscillation wavelengths
of 780 nm and 650 nm, taken as an example of the invention. In FIG.
9, 240 denotes a laser element portion for the oscillation
wavelength 780 nm, and 241 is a laser element portion for the
oscillation wavelength 650 nm. Their construction is roughly
explained below.
[0146] In each of the laser element portions 240, 241, sequentially
stacked on a substrate 210 are an n-GaAs buffer layer 211 (221),
n-In.sub.0.5(Ga.sub.0.3Al.sub.0.7).sub.0.5P first cladding layer
212 (222), In.sub.0.5(Ga.sub.0.5Al.sub.0.5).sub.0.5P optical guide
layer 213 (223), multiple quantum well (MQW) active layer 214
(224), In.sub.0.5(Ga.sub.0.5Al.sub.0.5).sub.0.5P optical guide
layer 215 (225), p-In.sub.0.5(Ga.sub.0.3Al.sub.0.7).sub.0.5P second
cladding layer 216 (226), p-In.sub.0.5Ga.sub.0.5P etching stop
layer 217 (227), p-In.sub.0.5(Ga.sub.0.3Al.sub.0.7).sub.0.5P third
cladding layer 218 (228), p-In.sub.0.5Ga.sub.0.5P cap layer 219
(229), n-GaAs current-blocking layer 231 and p-GaAs buried layer
232. The current-blocking layer 231 blocks and concentrates the
electrical current into the stripe region of the element. The
current-blocking layer 231 also confines the light emitted from the
active layer 214 (224) in the lateral direction to control
transverse modes.
[0147] In the laser element portion 240 for the wavelength 780 nm,
the active layer 214 has a bulk structure of a GaAlAs layer.
Alternatively, the active layer 214 may have a MQW structure of
Ga.sub.0.9Al.sub.0.1As well layers and Ga.sub.0.65Al.sub.0.35As
barrier layers.
[0148] In the laser element portion 241 for the wavelength 650 nm,
the active layer 224 has a MQW structure of In.sub.0.5Ga.sub.0.5As
well layers and In.sub.0.5(Ga.sub.0.5Al.sub.0.5).sub.0.5P barrier
layers.
[0149] In the structure shown in FIG. 9, the third cladding layers
218, 228 processed into convex stripes and the GaAs
current-blocking layer 231 are combined to form refractive index
steps in the transverse direction, and both lasers 240, 241 are
realized as index-guided lasers. The GaAs current-blocking layer
231 also functions to confine electric currents to respective ridge
stripe portions. Both these element portions are electrically
isolated by a separation groove 236 to be driven independently via
electrodes 233, 234. A minus-side electrode 235 can be made on the
bottom surface of the substrate 210 to be used commonly. As
explained before, the laser element portion 240 can be used for CD
discs, and the laser element portion 241 can be used for DVD disks.
That is, they are suitable for use as LD of the optical integrated
units explained above.
[0150] Additionally, the laser array shown in FIG. 9 has a unique
structure in employing the GaAlAs compound active layer with
respect to the InGaAlP compound cladding layers. By combining
unique mixed crystals in this manner, two kinds of elements having
different laser wavelengths of the visible region (650 nm) and the
infrared region (780 nm) can be integrated.
[0151] The laser array according to the invention is particularly
advantageous in having an excellent heat radiating property and
being manufactured reliably. These advantages of the laser array
according to the invention are explained below, comparing with a
semiconductor laser array by a related technique tried in the
course toward the unique structure according to the invention.
[0152] FIG. 28A is a schematic cross-sectional view of a 2-beam
laser array as a comparative example. In FIG. 28A, 751 denotes a
laser oscillating portion of the wavelength 780 nm, and 752 is a
laser oscillating portion of the wavelength 650 nm. That is, the
laser array has a structure in which a double-heterostructure for
generating two different kinds of laser beams is stacked, and
processed and separated into the form of steps. Electrodes are
obtained through p contact layers 785, 783 and n contact layers
786, 784 to drive two lasers independently. Only the
double-heterostructure in contact with the substrate can take one
of electrodes from the substrate. The 2-beam laser array can be
made of an epitaxial substrate stacking two double-heterostructures
shown in FIG. 28B. That is, after the p contact layers 776, 782 and
n contact layer 778 of the double-heterostructure is exposed in
each portion by using known lithography and etching, electrodes are
made. Although this example is of a 2-beam type, any desired number
of multi-beam laser can be made theoretically by additionally
stacking one or more double-heterostructures and repeating
lithography and etching.
[0153] On the other hand, FIG. 29 is a schematic cross-sectional
view of a 2-beam laser array as an another comparative example. In
FIG. 29, 851 denotes a laser oscillating portion of the wavelength
780 nm and 852 is a laser oscillating portion of the wavelength 650
nm. Similarly to the construction shown in FIGS. 28A and 28B, here
are used two epitaxial growth layers forming a multi-layered
double-heterostructure for generating two different laser beams. In
this example, however, all of the growth layers are p-type layers,
and an n-type selective diffusion region 898 is made after their
crystal growth to form a desired pn junction and ohmic contact.
[0154] The laser arrays by these related arts involved problems
explained below. First, if is difficult for each integrated laser
element portion to have beam properties suitable for optical disk
light sources. When a semiconductor laser is used in an optical
disk system, it is required to have a single horizontal transverse
mode in beams therefrom and an astigmatism not larger than 10 .mu.m
approximately. However, laser elements in the semiconductor laser
arrays shown in FIGS. 28A, 28B and 29 are so-called "gain-guided"
lasers merely controlled in current injection, and do not satisfy
the requirements. To meet these requirements, there is a method of
making steps of refractive index in the transverse direction of the
laser stripe to form a so-called index-guided structure. It is not
essentially impossible to build refractive index steps in each
laser element portion in the semiconductor laser array shown in
FIGS. 28A and 28B.
[0155] However, because the multi-layered double-heterostructure
must be processed into the form of steps, a large step is
inevitably made along the surface, and it makes lithography very
difficult. Moreover, since a difference in composition and size in
each double-heterostructure compels to take different processes for
making refractive index steps in each portion, a large number of
lithographic steps are required. For these reasons, it was
difficult to fabricate the laser array having index-guided laser
element portions with an acceptable production yield.
[0156] Another problem is a difficulty in mounting laser array
chips. To ensure stable operation of the laser over a long term,
heat generated upon laser operation must be discharged efficiently.
For this purpose, usually used is a so-called "upside-down"
mounting method in which the side nearer to the epitaxial layers is
welded to a heat sink. However, the semiconductor laser array shown
in FIGS. 28A and 28B inevitably has formed a large step on the top
surface, and it made it difficult to weld the chip while ensuring
good heat radiation from all laser element portions forming the
array. Additionally, as explained above, there is the restriction
that most of electrodes must be made on the side of the epitaxial
layers, and many electrode patterns must be made also on the heat
sink. Thus, structure of the heat sink was complicated, and it was
very difficult to weld the chip with no short circuit in any of the
patterns and with an acceptable yield.
[0157] These problems become more and more serious as the number of
beams increases. The semiconductor laser array shown in FIG. 29
also involves the same problems. Unlike the semiconductor laser
array shown in FIGS. 28A and 28B, it has no large step on the
surface, and it can be mounted more easily. However, when it is
mounted upside-down, the distance from the heat sink increases as
the laser element portion is nearer to the substrate side, and heat
radiation therefrom degrades. Additionally, it needs a technique
for diffusing silicon to different depths, and therefore
complicates the process and decreases the production yield.
[0158] As explained above, the semiconductor laser arrays according
to the related art shown in FIGS. 28A, 28B and 29 are difficult to
mount and low in production yield due to their complex
manufacturing process. Therefore, it was very difficult to
practically use them as light sources of optical disk systems.
[0159] In contrast, according to the invention, the laser array has
a sufficiently flat surface, and can be mounted upside down
reliably and easily. Therefore, it satisfies the temperature
characteristics required particularly in optical disk systems.
Additionally, any of integrated laser element portions are
sufficiently near the heat sink when the array is mounted upside
down, and heat can be radiated evenly.
[0160] Moreover, the electrode pattern on the laser array is
simple, and removes the problem of short-circuit between
electrodes. Furthermore, since the laser array according to the
invention has a unique feature in its manufacturing process as
explained later in greater detail, it is advantageous in ensuring
easy and reliable realization of a multi-beam laser.
[0161] Next explained is a manufacturing method of a laser array
according to the invention.
[0162] FIGS. 10 through 18 are cross-sectional views showing
different steps of a manufacturing method of a semiconductor laser
array according to the invention. First as shown in FIG. 10, grown
on an n-type (n-)GaAs substrate 210 are a series of epitaxial
layers 211 through 220 according to the specification for a 780 nm
laser by MOCVD (metal-organic chemical vapor deposition). An AlGaAs
compound multi-quantum well structure may be made as the active
layer 214. Carrier concentration of the p-type (p-) cladding layer
is preferably limited lower than approximately 8.times.10.sup.17
(cm.sup.-3) to prevent undesirable dispersion of the p-type dopant
into adjacent layers.
[0163] Next as shown in FIG. 11, the grown layers are removed
selectively. For this process, photolithography and etching may be
combined appropriately.
[0164] Next as shown in FIG. 12, another crystal growth is made.
More specifically, a series of epitaxial layers 221 through 229
according to the specification for a 650 nm laser are grown by
MOCVD. An InGaP/InGaAlP multi-quantum well structure may be used as
the active layer 224. By appropriately selecting a primary
treatment and conditions for crystal growth, epitaxial layers of a
quality equivalent to that obtained by growth on a flat substrate
surface can be obtained. As a result of an experiment by the
Inventor, it has been confirmed that this crystal growth does not
adversely affect the epitaxial layers previously made according to
the specification for the 780 nm laser.
[0165] Next as shown in FIG. 13, the layers grown with the
specification for the 650 nm laser are selectively removed. For
this process, photolithography and etching may be combined. during
the process, the epitaxial layers 211 through 219 with the 780 nm
specification are protected by the n-GaAs layer 220. After that,
the n-GaAs layer 220 may be removed selectively. Through these
steps, the 780 nm laser region and the 650 nm laser region can be
made in different regions on a common substrate.
[0166] Next s shown in FIG. 14, ridge stripes are made. More
specifically, A SiO.sub.2 stripe mask 230 is formed on each laser
element portion, and cap layer 219, 229 and third cladding layers
218, 228 are removed simultaneously by wet etching. Etching can be
stopped at the etching stop layers 217, 227.
[0167] The cap layers 219, 229 and the third cladding layers 218,
228 are preferably designed previously to be equal in thickness in
all laser element portions to ensure that etching progresses to the
etching stop layers in substantially the same time in all element
portions because the etching stop layers 219, 229 are also etched
gradually, and etching may progress beyond the etching stop layer
in any of the element portions if the etching time largely varies
among respective element portions. As explained later, since the
laser property of each element portion does not largely depends on
the third cladding layer, it is easy to design them equally.
[0168] Next as shown in FIG. 15, the GaAs current-blocking layer
231 is grown. More specifically, it is made by selective growth
using MOCVD. In this process, growth conditions can be adjusted to
prevent crystal growth on the SiO.sub.2 mask 230.
[0169] Next as shown in FIG. 16, a buried layer 232 is grown. More
specifically, after the SiO.sub.2 stripe mask 230 is removed, the
buried layer is grown by MOCVD.
[0170] Next as shown in FIG. 17, the separation groove 236 is made.
More specifically, selective etching is conducted by using RIE
(reactive ion etching). Usable as the reactive gas is a mixed gas
of Cl.sub.2 and BCl.sub.3, for example.
[0171] Next as shown in FIG. 18, electrodes are made. More
specifically, using a lift-off process, for example, independent
electrodes 233, 234 are made in respective laser element portions,
followed by abrasion of substrate 210 from its bottom surface to
adjust its thickness to approximately 100 .mu.m, thereby to form
the common electrode 235. After that, the electrode is alloyed in a
nitrogen atmosphere at 430.degree. C. approximately. The order of
process for making the separation groove 236 and the process for
making the p-electrode 233, 234 may be changed.
[0172] The wafer prepared in this manner is cleaved along the
direction perpendicular to the stripes to divide it into bars with
the width of 400 .mu.m. A cleaved surfaces of each bar functions as
a reflective mirror of the laser. To protect the facets, an
Al.sub.2O.sub.3 film was applied onto both cleaved surfaces by
sputtering. Its thickness may be chosen to a half the mean optical
wavelength of 650 nm and 780 nm. Then, the facet reflectance is
calculated as 29.4% for laser light of the wavelength 650 nm and
28.8% for laser light of 780 nm. In a design with a half the
individual optical wavelength, the facet reflectance is
approximately 30 to 32%. Even when comparing with this, the
above-indicated values of reflectance are in a practically
acceptable level. Therefore, the Al.sub.2O.sub.3 facet protective
film can be commonly used for two laser elements.
[0173] In order to ensure a higher optical output, a
high-reflective film is typically applied onto a facet opposite
from the emission facet. This is attained by stacking multiple
layers of dielectric films or semiconductor films with a thickness
equal to the 1/4 or 0.about.1/2 optical length of the
above-indicated average wavelength to make a Bragg reflector.
Usable as the dielectric films are, for example, Al.sub.2O.sub.3,
SiO.sub.x, TiO.sub.2 and SiN.sub.x. Amorphous silicon is usable as
the semiconductor film. In an example with layers of
Al.sub.2O.sub.3 (.lambda./4 optical length)/SiN.sub.x (.lambda./4
optical length) SiO.sub.x (.lambda./4 optical length)/SiN.sub.x
(.lambda./4 optical length)/SiO.sub.x (.lambda./4 optical
length)/SiN.sub.x (.lambda./4 optical length)/SiO.sub.x (.lambda./2
optical length) where .lambda. is the average wavelength, facet
reflectance is approximately 66% for the wavelength 780 nm and
approximately 70% for the wavelength 650 nm.
[0174] Each bar is divided into chips, and each chip is mounted on
a heat sink.
[0175] FIG. 19 is a schematic diagram showing a mounted aspect of
the semiconductor laser array according to the invention. This
example shown here corresponds to the mode of mounting shown in
FIG. 6. That is, the laser element is mounted on a Cu heat sink 41
via an insulating AlN sub-mount 50. The sub-mount 50 has formed a
pattern of gold electrode pads 352, 353, and they are connected to
p-electrodes 233, 234 of the respective laser element portions by
gold-tin solder 351. For this mode of mounting on patterned
electrodes, a conventional pattern recognition technique can be
used. Additionally, a gold electrode 355 is formed on the bottom
surface of the sub-mount 50, and it is connected to a gold
electrode 357 formed on the surface of the heat sink 41 by gold-tin
solder 356.
[0176] The manufacturing method according to the invention is
unique in first growing the multi-layered structure for the 780 nm
laser element portion 240 and next growing the multi-layered
structure for the 650 nm laser element portion 241. By growing
layers in this order, two kinds of laser structures can be
integrated without deteriorating the semiconductor layers grown
first because the 780 nm laser element portion is less subject to
deterioration by heat.
[0177] In laser elements, in general, there is the problem that the
light emitting property degrades particularly when the dopant
diffuses from the p-type cladding layer to the active layer. To
prevent it, impurity concentration of the p-type cladding layer
must be as low as possible. Comparing the 780 nm laser with the 650
nm laser, since the band gap of the active layer is narrower in the
780 nm laser, the band gap difference from that of the cladding
layer can be made larger in the 780 nm laser. As a result, carrier
concentration of its p-type cladding layer can be decreased.
[0178] On the other hand, in the 650 nm laser, the band gap
difference between the active layer and the cladding layer is
small, the p-type cladding layer needs doping of the p-type
impurity with a relatively high concentration.
[0179] For these reasons, by first growing the 780 nm laser element
portion, a plurality of laser structures can be integrated while
minimizing deterioration of the element caused by diffusion of the
p-type impurity.
[0180] The manufacturing method according to the invention is also
unique in limiting the doping concentration of the p-cladding layer
in the 780 nm laser element portion 240 first grown to
approximately 3.times.10.sup.17 (cm.sup.-3). As explained before,
in the 780 nm laser, concentration of the p-cladding layer can be
held in this level of concentration. As a result, unintentional
diffusion of the p-type dopant into adjacent layers can be
prevented, and it is therefore possible to remove the problem that
the p-type dopant diffuses into the active layer 224 of the laser
element portion 240 and deteriorated the light emission property
when the laser element portion 240 is heated during growth of the
laser element portion 241.
[0181] Additionally, according to the invention, since the
epitaxial layers in the laser element portions 240, 241 are almost
equal in thickness, no step is produced, and good contact to the
sub-mount 50 is ensured.
[0182] Furthermore, according to the invention, since both the
laser element portions 240 and 241 are mounted on the sub-mount 50
only through the cap layer and the p-side electrode, good heat
radiation is ensured. Through measurement of heat resistance of
both element portions by using a .DELTA.mV voltmeter, it has been
confirmed that it is approximately 30.degree. C./W up to the AlN
sub-mount 50, and it is equivalent to heat resistance of a single
laser element.
[0183] FIGS. 20A and 20B are graphs showing current-optical output
characteristics and oscillation spectrums of the 780 nm laser
element portion in the semiconductor laser array according to the
invention.
[0184] FIGS. 21A and 21B are graphs showing current-optical output
characteristics and oscillation spectrums of the 650 nm laser
element portion in the semiconductor laser array according to the
invention.
[0185] As these graphs show, current-optical output characteristics
equivalent to those of an independent laser element are obtained in
both the 780 nm laser element portion and the 650 nm laser element
portion. The transverse mode exhibits a single peak in both of
them. Astigmatism was measured by a knife-edge method, and it was
confirmed to be as good as 4 to 5 .mu.m in both of them.
Oscillation spectrum was a single mode under 5 mW in both of them.
These properties can be adjusted by changing their
double-heterostructure. An example thereof is shown below.
[0186] FIGS. 22A through 23B are graphs showing current-optical
output characteristics and oscillation spectrums of a 2-beam laser
array for oscillation wavelengths 780 nm and 650 nm, taken as
another example of the invention. Construction of the laser array
is essentially the same as that shown in FIG. 9, but the second
cladding layer 216 of the 780 nm laser element is slightly thicker.
In this manner, the laser can be made available for multi-mode
oscillation spectrums, and noise of the laser can be reduced when
used with optical discs. Although a single mode laser usually
requires high-frequency superposition to reduce noise in
application with optical disks, the example shown here removes the
requirement. Although the threshold current value of the laser
slightly increases, it is not serious. In contrast, in the
construction of FIG. 9, both the third cladding layers 218, 228 are
equal in thickness, etching for making the convex stripes can be
conducted simultaneously in both laser element portions.
[0187] FIGS. 24A through 24D are cross-sectional views showing
construction of other examples of the invention. As to laser arrays
shown here, the same portion as those of the foregoing example are
labeled with common reference numerals, and their detailed
explanation is omitted
[0188] FIG. 24A is a cross-sectional view showing construction of a
3-beam laser array for 780 nm TE mode, 650 nm TE mode and 650 nm TM
mode, taken as another example of the invention. The 780 nm TE mode
laser element portion 261, 650 nm TE mode laser element portion 262
have the same double-heterostructure as that of FIG. 9. The 650 nm
TM mode laser element portion 263 can be made by introducing a
tensile stress into the InGaP quantum well layer of the active
layer.
[0189] FIG. 24B is a cross-sectional view showing construction of a
2-beam semiconductor laser array for oscillation wavelengths of 780
nm and 650 nm, for example. In the laser array shown in FIG. 24B,
the cladding layers 212, 216, 222 and 226 may be formed of InGaAlP.
Alternatively, the cladding layers 212 and 216 may be formed of
AlGaAs while the cladding layers 222 and 226 may be formed of
InGaAlP.
[0190] n-GaAs current-blocking layer 231 is selectively stacked on
the p-GaAs cap layer 219 and p-In.sub.0.5Ga.sub.0.5P cap layer 229.
The cap layer 219 may alternatively formed of p-InGaP. The
current-blocking layer 231 has an stripe-shaped opening through
which the electrical current is injected into the lasing portion
250 (251). The laser array shown in FIG. 24B has the same feature
and advantages as the laser array shown in FIG. 9.
[0191] FIG. 24C is a cross-sectional view showing construction of
another 2-beam semiconductor laser array for oscillation
wavelengths according to the invention. In this laser array, the
cladding layers 212, 216, 222 and 226 may be formed of InGaAlP.
Alternatively, the cladding layers 212 and 216 may be formed of
AlGaAs while the cladding layers 222 and 226 may be formed of
InGaAlP.
[0192] p-GaAs buried layers 232 are selectively stacked on the
p-GaAs cap layer 219 and p-In.sub.0.5Ga.sub.0.5P cap layer 229. The
cap layer 219 may alternatively formed of p-InGaP. In FIG. 24C, the
spotted portions correspond to the current-blocking layer 231
having a high electrical resistivity. The high resistive
current-blocking layer 231 may be formed by selectively introducing
a impurity such as proton. Ion implantation technique may be
employed in order to form the current-blocking layer 231. The
stripe-shaped region between the current-blocking layer 231 remains
to be conductive, so that the electrical current may be injected
into the lasing portion 250 (251). The laser array shown in FIG.
24B also have the same feature and advantages as the laser array
shown in FIG. 9.
[0193] FIG. 24D is a cross-sectional view showing construction of
another 2-beam semiconductor laser array for oscillation
wavelengths according to the invention. In this laser array, the
cladding layers 212, 216, 222 and 226 may be formed of InGaAlP. The
p-InGaP etching stop layers 217 and 227 are interposed in the
cladding layers 216 and 226. The upper portions of the cladding
layers 216 and 226 are formed to be the stripe-shaped ridge
waveguides. On the top of the ridge, the intermediate layer 260 is
formed. The top layer 261 may be formed of p-GaAs. The layer 260 is
formed of a semiconductor material having an intermediate bandgap
between cladding layer 216 (226) and the top layer 261. N-InGaP may
be used for the layer 260.
[0194] Since the interface between the p-InGaAlP cladding layer 216
(226) and n-GaAs top layer 260 has a large hetero-barrier spike,
the electrical current is blocked. In this sense, the top layer 260
can function as the current-blocking layer at the both sides of the
ridge. In contrast to this, on the stripe-shaped cladding layer 216
and 226, the intermediate layer 260 makes the hetero-barrier spike
much lower. As a result, the electrical current is effectively
concentrated into the stripe-shaped region. The laser array shown
in FIG. 24D also have the same feature and advantages as the laser
array shown in FIG. 9.
[0195] FIG. 24E is a cross-sectional view showing construction of
another 2-beam semiconductor laser array for oscillation
wavelengths according to the invention. In this laser array, the
cladding layers 212, 216, 222 and 226 may be formed of InGaAlP. On
the top of the cladding layers 216 and 226, the stripe-shaped
intermediate layers 260, 260 are formed. The top layer 261 may be
formed of p-GaAs. The layer 260 is formed of a semiconductor
material having an intermediate bandgap between cladding layer 216
(226) and the top layer 261. N-InGaP may be used for the layer
260.
[0196] Since the interface between the p-InGaAlP cladding layer 216
(226) and n-GaAs top layer 260 has a large hetero-barrier spike,
the electrical current is blocked. In this sense, the top layer 260
can function as the current-blocking layer at the both sides of the
stripe. In contrast to this, the stripe-shaped intermediate layer
260 makes the hetero-barrier spike much lower. As a result, the
electrical current is effectively concentrated into the
stripe-shaped region. The laser array shown in FIG. 24E also have
the same feature and advantages as the laser array shown in FIG.
9.
[0197] Next explained is an optical disk driving apparatus
according to the invention.
[0198] FIG. 25 is a block diagram of the optical disk driving
apparatus according to the invention. The present invention enables
realization of a compact, light optical disk driving apparatus
compatible with DVD disks and CDs, for example, by using an optical
integrated unit of an optical pickup as explained with reference to
FIGS. 1 through 8.
[0199] The apparatus shown in FIG. 25 is an optical disk driving
apparatus capable of driving DVD-ROM disks and CDs, and includes a
signal processing system for DVDs and another signal processing
system for CDs.
[0200] A DVD or CD optical disk (DSC) is rotated at a predetermined
revolution by a driver (DR). The optical pickup (PU) moves to a
predetermined position under a servo control (SV). The optical
pickup may be any of those explained with reference to FIGS. 1
through 8. One of semiconductor laser arrays explained with
reference to FIGS. 9 through 24 is preferably used as the light of
the optical pickup.
[0201] Signals recorded on a disk are detected by the optical
pickup. In this process, the optical pickup adequately determines
whether the disk is DVD or CD, and used light from a predetermined
light source.
[0202] Detected signals are supplied to the DVD signal processing
system or the CD signal processing system, depending upon whether
the signals come from DVD or CD.
[0203] First explained is the DVD signal processing system. Signals
detected by the optical pickup are demodulated in accordance with
the decoding standards, and error correction is added (ENC/ERR).
Then, after buffering (BU), the signals are sent to an MPEG2
video/audio processor for separating them into video and audio
signals and executing processes up to demodulation of MPEG2 video
demodulation algorithm (MPEG-2 V/DEC) and audio (AC-3 or MPEG)
demodulation (A/DEC). Then, images are encoded by NTSC/PAL and
output (NTSC/PAL ENC). Audio signals are output through a D/A
converter (D/A). Since video signals are output at a variable rate,
buffer memory functions to absorb it. The entire system is
controlled by CPU for system control, and it is established as a
total system including a servo system as well.
[0204] As to the CD signal processing system, signals are decoded
(DEC), demodulated, then delivered through shock-proof memory
(SHC/MEM) to a D/A converter for conversion into an analog form,
and then output as audio signals. Simultaneously, sub-codes of the
detected signals are output from a CD-G (CD-graphic) processor
(CD-G PRC) as video signals.
[0205] The servo system is common to DVD and CD, and the entirety
of the system is controlled by CPU. Part of the signal processing
system can be commonly used appropriately.
[0206] According to the invention, there is provided an optical
disk driving apparatus which is compatible to both DVDs and CDs,
for example, compact and light, and highly reliable against
mechanical shocks or vibrations or changes in the ambient
temperature.
[0207] The invention is embodied in the above-explained modes, and
attains the following effects.
[0208] According to the invention, a semiconductor laser array
integrating index-guided semiconductor lasers different in
oscillation wavelength can be provided. Particularly, processes
such as lithography, etc. can be reduced because double transverse
mode control, current-blocking and burying processes of respective
elements are conducted collectively.
[0209] The semiconductor laser array according to the invention has
almost no step on the surface of the elements, and therefore
facilitates the lithographic process. The flat surface of the
elements makes welding to the heat sink easy, and improves heat
radiation.
[0210] Further, with the semiconductor laser array according to the
invention, electric wiring is easy because one of electrodes of
each laser element can be made on the substrate side.
[0211] As set forth above, according to the invention, a plurality
of index-guided lasers different in oscillation wavelength and
polarizing mode can be integrated on a single chip in a simple
process with a good production yield. As a result, construction of
the pickup in the optical disk system can be simplified.
[0212] Additionally, according to the invention, by equalizing the
second cladding layers of respective laser element portions in
thickness and by using an etching stop layer, etching for making
convex stripe waveguides can be effected reliably under good
control.
[0213] Moreover, according to the invention, by combining the
AlGaAs active layer with the InGaAlP cladding layer, a laser array
incorporating a visible region and an infrared region can be
realized.
[0214] According to the invention, by adequately determining
oscillation wavelengths of respective laser element portion in the
semiconductor laser array, a semiconductor laser array for an
optical disk system compatible with both the CD standards and the
DVD standards can be realized.
[0215] When comparing the optical pickup according to the invention
with the conventional structure shown in FIG. 26, because a unified
optical integrated unit is used, it is apparent that the optical
system is largely simplified.
[0216] On the other hand, according to the invention, an optical
integrated unit capable of releasing light beams with a plurality
of wavelengths and detecting their return light can be provided. By
using such an optical integrated unit, an optical pickup
significantly reduced in number of parts and significantly
simplified in its optical system can be realized.
[0217] Furthermore, according to the invention, optical axes of
different wavelengths of the optical pickup lie on a common axis,
and adjustment of the optical axis may be once. Further,
two-wavelength multiplexing means such as dichroic prism need not
be used. The number of parts such as laser element, photodetector
element, hologram element and stem may be singular,
respectively.
[0218] That is, according to the invention, an optical disk driving
apparatus much more compact, light and reliable against mechanical
vibrations or shocks than conventional ones can be realized, and
its industrial merits are great.
[0219] While the present invention has been disclosed in terms of
the preferred embodiment in order to facilitate better
understanding thereof, it should be appreciated that the invention
can be embodied in various ways without departing from the
principle of the invention. Therefore, the invention should be
understood to include all possible embodiments and modification to
the shown embodiments which can be embodied without departing from
the principle of the invention as set forth in the appended
claims.
[0220] The entire disclosure of Japanese Patent Application No.
H10-181068 filed on Jun. 26, 1998 including specification, claims,
drawings and summary is incorporated herein by reference in its
entirety.
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