U.S. patent application number 10/664078 was filed with the patent office on 2004-04-01 for copper-plating liquid, plating method and plating apparatus.
Invention is credited to Kimizuka, Ryoichi, Kobayashi, Takeshi, Nagai, Mizuki, Okuyama, Shuichi.
Application Number | 20040060825 10/664078 |
Document ID | / |
Family ID | 18697868 |
Filed Date | 2004-04-01 |
United States Patent
Application |
20040060825 |
Kind Code |
A1 |
Nagai, Mizuki ; et
al. |
April 1, 2004 |
Copper-plating liquid, plating method and plating apparatus
Abstract
There is provided a copper-plating liquid free from an alkali
metal and a cyanide which, when used in plating of a substrate
having an outer seed layer and fine recesses of a high aspect
ratio, can reinforce the thin portion of the seed layer and can
embed copper completely into the depth of the fine recesses. The
plating liquid contains divalent copper ions and a complexing
agent, and an optional pH adjusting agent.
Inventors: |
Nagai, Mizuki;
(Fujisawa-shi, JP) ; Okuyama, Shuichi;
(Yokohama-shi, JP) ; Kimizuka, Ryoichi; (Tokyo,
JP) ; Kobayashi, Takeshi; (Fujisawa-shi, JP) |
Correspondence
Address: |
WENDEROTH, LIND & PONACK, L.L.P.
2033 K STREET N. W.
SUITE 800
WASHINGTON
DC
20006-1021
US
|
Family ID: |
18697868 |
Appl. No.: |
10/664078 |
Filed: |
September 17, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10664078 |
Sep 17, 2003 |
|
|
|
09893624 |
Jun 29, 2001 |
|
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Current U.S.
Class: |
205/291 ;
106/1.18; 205/118 |
Current CPC
Class: |
C25D 5/10 20130101; C25D
7/123 20130101; C25D 17/001 20130101; C25D 5/611 20200801; C25D
3/38 20130101 |
Class at
Publication: |
205/291 ;
106/001.18; 205/118 |
International
Class: |
C25D 005/02 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 30, 2000 |
JP |
2000-199924 |
Claims
What is claimed is:
1. A copper-plating liquid free from an alkali metal and a cyanide,
comprising divalent copper ions and a complexing agent.
2. The copper-plating liquid according to claim 1, further
comprising a pH adjusting agent free from an alkali metal and a
cyanide, selected from the group consisting of sulfuric acid,
hydrochloric acid, phosphoric acid, cholin, ammonia and tetramethyl
ammonium hydroxide.
3. The copper-plating liquid according to claim 1, wherein a
concentration of said divalent copper ions is in the range of
0.1-100 g/l, a concentration of said complexing agent is in the
range of 0.1-500 g/l, and a pH of the copper-plating liquid is in
the range of 7-14.
4. The copper-plating liquid according to claim 1, further
comprising at least one additive selected from the group consisting
of organic acids, amines, glycerin, gelatin, heavy metal ions,
thiazoles, triazoles, thiadiazoles, imidazoles, pyrimidines,
sulfonic acids, and gultamic acids.
5. The copper-plating liquid according to claim 1, wherein said
complexing agent is selected from the group consisting of
ethylenediamine tetracetic acid, ethylenediamine,
N,N',N",N'"-ethylene-di-nitro-tetrapropane-2-ol, pyrophosphoric
acid, iminodiacetic acid, diethylenetriamine pentacetic acid,
diethylenetriamine, triethylenetetramine, tetraethylenepentamine,
diamino butane, hydroxyethyl ethylenediamine, ethylediamine
tetrapropionic acid, ethylenediamine tetramethylene phosphonic
acid, diethylenetriamine tetramethylene phosphonic acid,
diethylenetriamine pentamethylene phosphonic acid, and their
derivatives.
6. The copper-plating liquid according to claim 5, further
comprising a pH adjusting agent free from an alkali metal and a
cyanide, selected from the group consisting of sulfuric acid,
hydrochloric acid, phosphoric acid, cholin, ammonia and tetramethyl
ammonium hydroxide.
7. The copper-plating liquid according to claim 5, wherein a
concentration of said divalent copper ions is in the range of
0.1-100 g/l, a concentration of said complexing agent is in the
range of 0.1-500 g/l, and a pH of the copper-plating liquid is in
the range of 7-14.
8. The copper-plating liquid according to claim 5, further
comprising at least one additive selected from the group consisting
of organic acids, amines, glycerin, gelatin, heavy metal ions,
thiazoles, triazoles, thiadiazoles, imidazoles, pyrimidines,
sulfonic acids, and gultamic acids.
9. A method for plating a substrate having fine recesses, in a
surface of the substrate thereof, covered with a barrier layer
and/or a seed layer to fill said fine recesses with a metal,
comprising: plating the surface of the substrate in a first-stage
by contacting the substrate in a first plating liquid; and plating
the surface of the substrate in a second-stage by contacting the
substrate in a second plating liquid, wherein said first plating
liquid has a higher polarization than said second plating
liquid.
10. The method according to claim 9, wherein said first plating
liquid is free from an alkali metal and a cyanide, and comprises
divalent copper ions and a complexing agent.
11. The method according to claim 9, wherein said first plating
liquid further comprises a pH adjusting agent free from an alkali
metal and a cyanide, selected from the group consisting of sulfuric
acid, hydrochloric acid, phosphoric acid, cholin, ammonia and
tetramethyl ammonium hydroxide.
12. The method according to claim 9, wherein said first plating
liquid has a divalent copper ion concentration of 0.1-100 g/l and a
complexing agent concentration of 0.1-500 g/l, and has a pH of
7-14.
13. The method according to claim 9, wherein said first plating
liquid further comprises at least one additive selected from the
group consisting of organic acids, amines, glycerin, gelatin, heavy
metal ions, thiazoles, triazoles, thiadiazoles, imidazoles,
pyrimidines, sulfonic acids, and gultamic acids.
14. The method according to claim 9, wherein said complexing agent
contained in said first plating liquid is selected from the group
consisting of ethylenediamine tetracetic acid, ethylenediamine,
N,N',N",N'"-ethylene-di-nitro-tetrapropane-2-ol, pyrophosphoric
acid, iminodiacetic acid, diethylenetriamine pentacetic acid,
diethylenetriamine, triethylenetetramine, tetraethylenepentamine,
diamino butane, hydroxyethyl ethylenediamine, ethylediamine
tetrapropionic acid, ethylenediamine tetramethylene phosphonic
acid, diethylenetriamine tetramethylene phosphonic acid,
diethylenetriamine pentamethylene phosphonic acid, and their
derivatives
15. The method according to claim 14, wherein said first plating
liquid further comprises a pH adjusting agent free from an alkali
metal and a cyanide, selected from the group consisting of sulfuric
acid, hydrochloric acid, phosphoric acid, cholin, ammonia and
tetramethyl ammonium hydroxide.
16. The method according to claim 14, wherein said first plating
liquid has a divalent copper ion concentration of 0.1-100 g/l and a
complexing agent concentration of 0.1-500 g/l, and has a pH of
7-14.
17. The method according to claim 14, wherein said first plating
liquid further comprises at least one additive selected from the
group consisting of organic acids, amines, glycerin, gelatin, heavy
metal ions, thiazoles, triazoles, thiadiazoles, imidazoles,
pyrimidines, sulfonic acids, and gultamic acids.
18. A method for plating a substrate having fine recesses, in a
surface of the substrate thereof, covered with a barrier layer
and/or a seed layer to fill said fine recesses with a metal,
comprising: plating the surface of the substrate by contacting the
substrate in a plating liquid having an excellent uniform
electrodeposition property.
19. The method according to claim 18, wherein said plating liquid
is free from an alkali metal and a cyanide, and comprises divalent
copper ions and a complexing agent.
20. The method according to claim 18, wherein said plating liquid
further comprises a pH adjusting agent free from an alkali metal
and a cyanide, selected from the group consisting of sulfuric acid,
hydrochloric acid, phosphoric acid, cholin, ammonia and tetramethyl
ammonium hydroxide.
21. The method according to claim 18, wherein said plating liquid
has a divalent copper ion concentration of 0.1-100 g/l and a
complexing agent concentration of 0.1-500 g/l, and has a pH of
7-14.
22. The method according to claim 18, wherein said plating liquid
further comprises at least one additive selected from the group
consisting of organic acids, amines, glycerin, gelatin, heavy metal
ions, thiazoles, triazoles, thiadiazoles, imidazoles, pyrimidines,
sulfonic acids, and gultamic acids.
23. The method according to claim 18, wherein said complexing agent
contained in said plating liquid is selected from the group
consisting of ethylenediamine tetracetic acid, ethylenediamine,
N,N',N",N'"-ethylene-di- -nitro-tetrapropane-2-ol, pyrophosphoric
acid, iminodiacetic acid, diethylenetriamine pentacetic acid,
diethylenetriamine, triethylenetetramine, tetraethylenepentamine,
diamino butane, hydroxyethyl ethylenediamine, ethylediamine
tetrapropionic acid, ethylenediamine tetramethylene phosphonic
acid, diethylenetriamine tetramethylene phosphonic acid,
diethylenetriamine pentamethylene phosphonic acid, and their
derivatives.
24. The method according to claim 23, wherein said plating liquid
further comprises a pH adjusting agent free from an alkali metal
and a cyanide, selected from the group consisting of sulfuric acid,
hydrochloric acid, phosphoric acid, cholin, ammonia and tetramethyl
ammonium hydroxide.
25. The method according to claim 23, wherein said plating liquid
has a divalent copper ion concentration of 0.1-100 g/l and a
complexing agent concentration of 0.1-500 g/l, and has a pH of
7-14.
26. The method according to claim 23, wherein said plating liquid
further comprises at least one additive selected from the group
consisting of organic acids, amines, glycerin, gelatin, heavy metal
ions, thiazoles, triazoles, thiadiazoles, imidazoles, pyrimidines,
sulfonic acids, and gultamic acids.
27. A plating apparatus comprising: a first plating section for
plating a surface of a substrate having fine recesses formed in the
surface thereof and covered with a barrier layer and/or a seed
layer in a first-stage; a first plating liquid feed section for
feeding a first liquid into a plating chamber in said first plating
section; a second plating section for plating the surface of the
substrate which has undergone said first-stage plating in a
second-stage; a second plating liquid feed section for feeding a
second plating liquid into a plating chamber in said second plating
section; and a transport section for transporting the substrate
from said first plating section to said second plating section,
wherein said first plating liquid has a higher polarization than
said second plating liquid.
28. The plating apparatus according to claim 27, wherein said first
plating liquid is free from an alkali metal and a cyanide, and
comprises divalent copper ions and a completing agent.
29. The plating apparatus according to claim 27, wherein said first
plating liquid further comprises a pH adjusting agent free from an
alkali metal and a cyanide, selected from the group consisting of
sulfuric acid, hydrochloric acid, phosphoric acid, cholin, ammonia
and tetramethyl ammonium hydroxide.
30. The plating apparatus according to claim 27, wherein said first
plating liquid has a divalent copper ion concentration of 0.1-100
g/l and a complexing agent concentration of 0.1-500 g/l, and has a
pH of 7-14.
31. The plating apparatus according to claim 27, wherein said first
plating liquid further comprises at least one additive selected
from the group consisting of organic acids, amines, glycerin,
gelatin, heavy metal ions, thiazoles, triazoles, thiadiazoles,
imidazoles, pyrimidines, sulfonic acids, and gultamic acids.
32. The plating apparatus according to claim 27, wherein said
complexing agent contained in said first plating liquid is selected
from the group consisting of ethylenediamine tetracetic
acid,ethylenediamine,
N,N',N",N'"-ethylene-di-nitro-tetrapropane-2-ol, pyrophosphoric
acid, iminodiacetic acid, diethylenetriamine pentacetic acid,
diethylenetriamine, triethylenetetramine, tetraethylenepentamine,
diamino butane, hydroxyethyl ethylenediamine, ethylediamine
tetrapropionic acid, ethylenediamine tetramethylene phosphonic
acid, diethylenetriamine tetramethylene phosphonic acid,
diethylenetriamine pentamethylene phosphonic acid, and their
derivatives.
33. The plating apparatus according to claim 32, wherein said first
plating liquid further comprises a pH adjusting agent free from an
alkali metal and a cyanide, selected from the group consisting of
sulfuric acid, hydrochloric acid, phosphoric acid, cholin, ammonia
and tetramethyl ammonium hydroxide.
34. The plating apparatus according to claim 32, wherein said first
plating liquid has a divalent copper ion concentration of 0.1-100
g/l and a complexing agent concentration of 0.1-500 g/l, and has a
pH of 7-14.
35. The plating apparatus according to claim 32, wherein said first
plating liquid further comprises at least one additive selected
from the group consisting of organic acids, amines, glycerin,
gelatin, heavy metal ions, thiazoles, triazoles, thiadiazoles,
imidazoles, pyrimidines, sulfonic acids, and gultamic acids.
36. A plating apparatus comprising: a loading/unloading section for
loading and unloading a semiconductor substrate; a first metal
plating unit for forming a first plated metal film on a surface of
the semiconductor substrate; a second metal plating unit for
forming a second plated metal film on said first plated metal film;
a bevel-etching unit for etching away a metal film formed on the
edge portion of the semiconductor substrate which has said second
plated metal film on the surface thereof; an annealing unit for
annealing said semiconductor substrate; and a transporting device
for transporting said semiconductor substrate, wherein said first
metal plating liquid for forming said first plated metal film has a
higher polarization than said second metal plating liquid for
forming said second plated metal film.
37. A plating method, comprising: forming a first plated metal film
on a surface of a semiconductor substrate; forming a second plated
metal film on said first plated metal film; etching away a metal
film formed on the edge portion of the semiconductor substrate
which has said second plated metal film on the surface thereof; and
annealing the bevel-etched semiconductor substrate, wherein said
first metal plating liquid for forming said first plated metal film
has a higher polarization than said second metal plating liquid for
forming said second plated metal film.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] This invention relates a copper-plating liquid, a plating
method and a plating apparatus, and more particularly to a
copper-plating liquid, a plating method and a plating apparatus
useful for forming copper interconnects by plating a semiconductor
substrate with copper to fill copper in fine recesses for
interconnects formed in the surface of the substrate.
[0003] 2. Description of the Related Art
[0004] In recent years, instead of using aluminum or aluminum
alloys as a material for forming interconnection circuits on a
semiconductor substrate, there is an eminent movement towards using
copper (Cu) which has a low electric resistance and high
electromigration resistance. Copper interconnects are generally
formed by embedding copper into fine recesses formed in the surface
of a substrate. There are known various techniques for producing
such copper interconnects, including CVD, sputtering, and plating.
According to any such technique, a copper is deposited on the
substantially entire surface of a substrate, followed by removal of
unnecessary copper by chemical mechanical polishing (CMP).
[0005] FIGS. 39A through 39C illustrate, in a sequence of process
steps, an example of producing such a substrate w having copper
interconnects. As shown in FIG. 39A, an oxide film 2 of SiO.sub.2
is deposited on a conductive layer 1a formed on a semiconductor
base 1 on which semiconductor devices are formed. A contact hole 3
and a trench 4 for interconnects are formed in the oxide film 2 by
the lithography/etching technique. Thereafter, a barrier layer 5 of
TaN or the like is formed on the entire surface, and a seed layer 7
as an electric supply layer for electroplating is formed on the
barrier layer 5.
[0006] Then, as shown in FIG. 39B, copper plating is performed onto
the surface of the substrate W to fill the contact hole 3 and the
trench 4 with copper and, at the same time, deposit a copper film 6
on the oxide film 2. Thereafter, the copper film 6 on the oxide
film 2 is removed by chemical mechanical polishing (CMP) so as to
make the surface of the copper film 6 filled in the contact hole 3
and the trench 4 for interconnects and the surface of the oxide
film 2 lie substantially on the same plane. An interconnect
composed of the copper film 6, as shown in FIG. 39C is thus
formed.
[0007] The seed layer 7 is generally formed by means of sputtering
or CVD. In the case where the copper film 6 is formed by
electroplating with copper, a copper sulfate plating liquid, which
contains copper sulfate and sulfuric acid, has generally been used
as a plating liquid.
[0008] With the recent trend towards finer interconnects, the
trenches for interconnects or plugs are becoming to have a higher
aspect ratio. This poses the problem that a seed layer cannot be
sufficiently formed by, e.g. sputtering, in the bottom portion of
the trench, thus failing to form a uniform seed layer. Thus, as
shown in FIG. 40A, there is a likelihood that the thickness t.sub.1
of the seed layer 7 formed on the side wall of the trench near the
bottom portion thereof becomes {fraction (1/10)} or less of the
thickness t.sub.2 of the seed layer 7 formed on the side wall of
the trench near the surface of the substrate. When electroplating
with copper is carried out to fill with copper into such a trench
by using a copper sulfate plating liquid, an electric current
hardly passes through the extremely thin portion in the seed layer
7, causing to the formation of an undeposited portion (void) 8
shown in FIG. 40B. An attempt to overcome this drawback by
increasing the overall thickness of the seed layer 7 so as to
thicken the extremely thin portion would not be successful, since
in electroplating with copper for filling such trench, copper would
deposit thick around the opening of the trench to close it,
resulting in the formation of a void.
[0009] On the other hand, a copper-plating liquid, which comprises
a base such as copper sulfate and, as additives, a complexing agent
and a pH adjusting agent for maintaining the liquid pH within a
neutral range, has been developed. Such a copper-plating liquid,
however, is generally too unstable for practical use. Moreover, the
pH adjusting agent generally contains an alkali metal such as
sodium and potassium. A plating liquid containing an alkali metal,
when applied to a semiconductor substrate, causes electromigration
to deteriorate the semiconductor. There is also known a
copper-plating liquid comprising a copper cyanide. However, since
cyanides are harmful to human health, it is required to avoid using
such a plating liquid from operational and environmental
viewpoints.
SUMMARY OF THE INVENTION
[0010] The present invention has been made in view of the above
drawbacks in the prior art. It is therefore an object of the
present invention to provide a copper-plating liquid which is free
from alkali metals and cyanides, and which can reinforce the thin
portion of a seed layer and ensures complete filling with copper in
fine recesses having a high aspect ratio formed in the surface of a
substrate, and also to provide a plating method and a plating
apparatus which utilize the copper-plating liquid.
[0011] In order to achieve the above object, the present invention
provides a copper-plating liquid free from an alkali metal and a
cyanide, comprising divalent copper ions and a complexing agent.
The inclusion of a complexing agent in the copper-plating liquid
can enhance the polarization as a plating bath and improve the
uniform electrodeposition property. This enables reinforcement of
the thin portion of a seed layer and uniform filling with copper
into the depths of fine recesses, such as trenches and holes,
having a high aspect ratio. Further, the deposited plating is
dense, and is freed from microvoids formation therein. Furthermore,
the copper-plating liquid of the present invention, which does not
contain any alkali metal nor cyanide, does not cause deterioration
of a semiconductor which would otherwise be caused by
electromigration due to the presence of an alkali metal and, in
addition, does meet the demand for avoiding the use of a
cyanide.
[0012] Preferably, the plating liquid further contain a pH
adjusting agent selected from agents not containing an alkali metal
nor a cyanide, such as sulfuric acid, hydrochloric acid, phosphoric
acid, choline, ammonia and tetramethyl ammonium hydroxide. By using
such a pH adjusting agent according to necessity, the plating
liquid may be maintained within a pH range of 7-14, preferably at a
pH range of about 8-11, more preferably at a pH range of 8-9.
[0013] The concentration of divalent copper ions in the plating
liquid should preferably be in the range of 0.1-100 g/l, more
preferably in the rage of 1-10 g/l. A copper ion concentration
below the above range lowers the current efficiency, thereby
lowering the precipitation efficiency of copper. A copper ion
concentration exceeding the above range worsens the
electrodeposition property of the liquid. The concentration of the
complexing agent should preferably be in the range of 0.1-500 g/l,
more preferably in the range of 0.1-200 g/l, furthermore preferably
in the range of 20-200 g/l. When the concentration is lower than
the above range, an adequate complexing with copper can hardly be
made whereby sediments are likely to produce. When the
concentration is higher than the above range, on the other hand,
the plating can take on the so-called "burnt deposit" state and
thus the appearance is worsened and, in addition, the treatment of
waste liquid becomes different. Further, when the pH of the plating
liquid is too low, the complexing agent cannot effectively combine
with copper, thus failing to provide a complete complex. On the
other hand, too high a pH of the plating liquid can bring about the
formation of a variant form of complex which makes a sediment. The
above described preferred pH range can obviate these drawbacks.
[0014] The plating liquid may also contain at least one additive
selected from organic acids, amides, glycerin, gelatin, heavy metal
ions, thiazoles, triazoles, thiadiazoles, imidazoles, pyrimidines,
sulfonic acids, and gultamic acids.
[0015] Specific examples of the complexing agent may include
ethylenediamine tetracetic acid, ethylenediamine,
N,N',N",N'"-ethylene-di- -nitro-tetrapropane-2-ol, pyrophosphoric
acid, iminodiacetic acid, diethylenetriamine pentacetic acid,
diethylenetriamine, triethylenetetramine, tetraethylenepentamine,
diamino butane, hydroxyethyl ethylenediamine, ethylediamine
tetrapropionic acid, ethylenediamine tetramethylene phosphonic
acid, diethylenetriamine tetramethylene phosphonic acid,
diethylenetriamine pentamethylene phosphonic acid, and their
derivatives.
[0016] The present invention provides a method for plating a
substrate having fine recesses, in a surface of the substrate
thereof, covered with a barrier layer and/or a seed layer to fill
the fine recesses with a metal, comprising: plating the surface of
the substrate in a first-stage by contacting the substrate in a
first plating liquid; and plating the surface of the substrate in a
second-stage by contacting the substrate in a second plating
liquid, wherein the first plating liquid has a higher polarization
than the second plating liquid.
[0017] According to this method, when there is a thin portion in
the seed layer, the thin portion can be reinforced by the
first-stage plating to provide a complete seed layer, and the
complete seed layer effectively serves as an electric supply layer
in the second-stage plating. The method can thus fill a metal such
as copper fully with the fine recesses and form a plated film
having a flat surface.
[0018] The present invention, in another aspect thereof, provides a
method for plating a substrate having fine recesses, in a surface
of the substrate thereof, covered with a barrier layer and/or a
seed layer to fill the fine recesses with a metal, comprising:
plating the surface of the substrate by contacting the substrate in
a plating liquid having an excellent uniform electrodeposition
property.
[0019] The present invention also provide a plating apparatus
comprising: a first plating section for plating a surface of a
substrate having fine recesses formed in the surface thereof and
covered with a barrier layer and/or a seed layer in a first-stage;
a first plating liquid feed section for feeding a first liquid into
a plating chamber in the first plating section; a second plating
section for plating the surface of the substrate which has
undergone the first-stage plating in a second-stage; a second
plating liquid feed section for feeding a second plating liquid
into a plating chamber in the second plating section; and a
transport section for transporting the substrate from the first
plating section to the second plating section, wherein the first
plating liquid has a higher polarization than the second plating
liquid.
[0020] The present invention provide a plating apparatus
comprising: a loading/unloading section for loading and unloading a
semiconductor substrate; a first metal plating unit for forming a
first plated metal film on a surface of the semiconductor
substrate; a second metal plating unit for forming a second plated
metal film on the first plated metal film; a bevel-etching unit for
etching away a metal film formed on the edge portion of the
semiconductor substrate which has the second plated metal film on
the surface thereof; an annealing unit for annealing the
semiconductor substrate; and a transporting device for transporting
the semiconductor substrate, wherein the first metal plating liquid
for forming the first plated metal film has a higher polarization
than the second metal plating liquid for forming the second plated
metal film.
[0021] The present invention provide a plating method, comprising:
forming a first plated metal film on a surface of a semiconductor
substrate; forming a second plated metal film on the first plated
metal film; etching away a metal film formed on the edge portion of
the semiconductor substrate which has the second plated metal film
on the surface thereof; and annealing the bevel-etched
semiconductor substrate, wherein the first metal plating liquid for
forming the first plated metal film has a higher polarization than
the second metal plating liquid for forming the second plated metal
film.
[0022] The above and other objects, features, and advantages of the
present invention will be apparent from the following description
when taken in conjunction with the accompanying drawings which
illustrates preferred embodiments of the present invention by way
of example.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] FIG. 1 is a plan view showing a layout of a plating
apparatus according to an embodiment of the present invention;
[0024] FIG. 2 is an explanatory view showing an air current in the
plating apparatus shown in FIG. 1;
[0025] FIG. 3 is a cross-sectional view showing a whole structure
of a plating section at the time of plating process;
[0026] FIG. 4 is a schematic diagram showing a flow of a plating
liquid in a plating section;
[0027] FIG. 5 is a cross-sectional view showing a whole structure
of the plating section at the time of non-plating process (at the
time of transfer of a substrate);
[0028] FIG. 6 is a cross-sectional view showing a whole structure
of the plating section at the time of maintenance;
[0029] FIG. 7 is a cross-sectional view explanatory of a
relationship among a housing, a pressing ring, and a substrate at
the time of transfer of a substrate;
[0030] FIG. 8 is an enlarged view showing a part of FIG. 7;
[0031] FIGS. 9A through 9D are schematic views explanatory of the
flow of a plating liquid at the time of plating process and at the
time of non-plating process;
[0032] FIG. 10 is an enlarged cross-sectional view showing a
centering mechanism in the plating section;
[0033] FIG. 11 is a cross-sectional view showing a feeding contact
(probe) in the plating section;
[0034] FIG. 12 is a schematic view showing a cleaning/drying
section;
[0035] FIG. 13 is a schematic view showing a bevel-etching/chemical
cleaning section;
[0036] FIG. 14 is a side view of a rotatable holding device for use
in the cleaning/drying section and in the bevel-etching/chemical
cleaning;
[0037] FIG. 15 is a plane view of FIG; 14.
[0038] FIG. 16 is a cross-sectional view showing the details of a
holding member in the rotatable holding device shown in FIG.
14;
[0039] FIG. 17 is a diagram seeing along arrow line A-A of FIG.
16;
[0040] FIGS. 18A to 18C are views showing a transporting device,
and FIG. 18A is a perspective view showing a device, FIG. 18B is a
plan view of a robot hand, and FIG. 18C is a cross-sectional view
of the robot hand;
[0041] FIG. 19 is a flow diagram showing the flow of process steps
according to an embodiment of the plating method of the present
invention;
[0042] FIG. 20 is a graph showing the relationship between the
voltage and the current density in two different copper-plating
liquids having different polarizations;
[0043] FIG. 21 is a flow diagram showing the flow of process steps
according to another embodiment of the plating method of the
present invention;
[0044] FIG. 22 is a graph showing current-electrical potential
curves for the complex baths 1-3 and the copper sulfate bath 1 used
in the working examples;
[0045] FIGS. 23A through 23C are diagrams schematically showing the
respective states of poor eletrodeposition, seam void, and
particulate void, as observed under SEM;
[0046] FIG. 24 is a plan view showing a layout of a plating
apparatus according to another embodiment of the present
invention;
[0047] FIGS. 25A through 25C are diagram illustrating another
plating steps;
[0048] FIG. 26 is a view showing a schematic constitution of a
electroless plating apparatus;
[0049] FIG. 27 is a plan view showing a layout of a plating
apparatus according to still another embodiment of the present
invention;
[0050] FIG. 28 is a view showing a schematic constitution of a
polishing unit;
[0051] FIG. 29 is a view showing a schematic constitution of a
cleaning mechanism for cleaning the polishing table;
[0052] FIG. 30 is a perspective view showing a transporting
device;
[0053] FIGS. 31A and 31B are views showing a robot hand attached to
the transporting device, and FIG. 31A is a plan view and FIG. 31B
is a side sectional view;
[0054] FIG. 32A and 32B are views showing another transporting
device, and FIG. 31A is a plan view and FIG. 31B is a side
sectional view;
[0055] FIGS. 33A and 33B are views showing another film thickness
measurement, and FIG. 33A is a plan view and FIG. 33B is a side
sectional view;
[0056] FIG. 34 is a schematic front view of the neighborhood of a
reversing machine;
[0057] FIG. 35 is a plan view of a reversing arm portion;
[0058] FIG. 36 is a plan view showing a layout of a plating
apparatus according to still another embodiment of the present
invention;
[0059] FIG. 37 is a plan view showing a layout of a plating
apparatus according to still another embodiment of the present
invention;
[0060] FIG. 38 is a plan view showing a layout of a plating
apparatus according to still another embodiment of the present
invention;
[0061] FIGS. 39A through 39C are diagrams illustrating, in a
sequence of process steps, the formation of copper interconnects
through copper plating;
[0062] FIG. 40A and 40B are cross-sectional views illustrating the
state of a seed layer and a void which has been formed according to
a conventional method;
[0063] FIG. 41 is a plan view showing a layout of a plating
apparatus according to still another embodiment of the present
invention; and
[0064] FIG. 42 is a plan view showing a layout of a plating
apparatus according to still another embodiment of the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0065] Preferred embodiments of the present invention will now be
described with reference to the drawings.
[0066] FIG. 1 is a plan view of a plating apparatus in accordance
with the present invention. The plating apparatus comprises
loading/unloading sections 10, each pair of cleaning/drying
sections 12, first substrate stages 14, bevel-etching/chemical
cleaning sections 16 and second substrate stages 18, a washing
section 20 provided with a mechanism for reversing the substrate
through 180.degree., and four plating sections 22. The plating
apparatus is also provided with a first transporting device 24 for
transporting a substrate between the loading/unloading sections 10,
the cleaning/drying sections 12 and the first substrate stages 14,
a second transporting device 26 for transporting a substrate
between the first substrate stages 14, the bevel-etching/chemical
cleaning sections 16 and the second substrate stages 18, and a
third transporting device 28 for transporting the substrate between
the second substrate stages 18, the washing section 20 and the
plating sections 22.
[0067] The plating apparatus has a partition wall 711 for dividing
the plating apparatus into a plating space 712 and a clean space
713. Air can individually be supplied into and exhausted from each
of the plating space 712 and the clean space 713. The partition
wall 711 has a shutter (not shown) capable of opening and closing.
The pressure of the clean space 713 is lower than the atmospheric
pressure and higher than the pressure of the plating space 712.
This can prevent the air in the clean space 713 from flowing out of
the plating apparatus and can prevent the air in the plating space
712 from flowing into the clean space 713.
[0068] FIG. 2 is a schematic view showing an air current in the
plating apparatus. In the clean space 713, a fresh external air is
introduced through a pipe 730 and pushed into the clean space 713
through a high-performance filter 731 by a fan. Hence, a downflow
clean air is supplied from a ceiling 732a to positions around the
cleaning/drying sections 12 and the bevel-etching/chemical cleaning
sections 16. A large part of the supplied clean air is returned
from a floor 732b through a circulation pipe 733 to the ceiling
732a, and pushed again into the clean space 713 through the
high-performance filter 731 by the fan, to thus circulate in the
clean space 713. A part of the air is discharged from the
cleaning/drying sections 12 and the bevel-etching/chemical cleaning
sections 16 through a pipe 734 to the exterior, so that the
pressure of the clean space 713 is set to be lower than the
atmospheric pressure.
[0069] The plating space 712 having the washing sections 20 and the
plating sections 22 therein is not a clean space (but a
contamination zone). However, it is not acceptable to attach
particles to the surface of the substrate. Therefore, in the
plating space 712, a fresh external air is introduced through a
pipe 735, and a downflow clean air is pushed into the plating space
712 through a high-performance filter 736 by a fan, for thereby
preventing particles from being attached to the surface of the
substrate. However, if the whole flow rate of the downflow clean
air is supplied by only an external air supply and exhaust, then
enormous air supply and exhaust are required. Therefore, the air is
discharged through a pipe 738 to the exterior, and a large part of
the downflow is supplied by a circulating air through a circulation
pipe 739 extended from a floor 737b, in such a state that the
pressure of the plating space 712 is maintained to be lower than
the pressure of the clean space 713.
[0070] Thus, the air returned to a ceiling 737a through the
circulation pipe 739 is pushed again into the plating space 712
through the high-performance filter 736 by the fan. Hence, a clean
air is supplied into the plating space 712 to thus circulate in the
plating space 712. In this case, air containing chemical mist or
gas emitted from the washing sections 20, the plating sections 22,
the third transporting device 28, and a plating liquid regulating
tank 740 is discharged through the pipe 738 to the exterior. Thus,
the pressure of the plating space 712 is controlled so as to be
lower than the pressure of the clean space 713.
[0071] FIG. 3 shows a main part of the plating section 22. The
plating section 22 mainly comprises a plating process container 46
in the substantially cylindrical form for holding a plating liquid
45 therein, and a head 47 disposed above the plating process
container 46 for holding a substrate. In FIG. 3, the head 47 is
located in a plating position in which a substrate W held by the
head 47 is lowered and the liquid level of the plating liquid 45 is
raised.
[0072] The plating process container 46 comprises a plating
container 50 which has a plating chamber 49 which is open upward
and has an anode 48 at the bottom thereof, and contains the plating
liquid 45 therein. Plating liquid supply nozzles 53, which project
horizontally toward the center of the plating chamber 49, are
disposed at circumferentially equal intervals on the inner
circumferential wall of the plating container 50. The plating
liquid supply nozzles 53 communicate with plating liquid supply
passages extending vertically within the plating container 50.
[0073] The plating liquid supply passages are connected to the
plating liquid regulating tank 40 shown in FIG. 4 through the
plating liquid supply pipes 55. Control valves 56 for controlling
the back pressure so as to be constant are disposed on each of the
plating liquid supply pipes 55.
[0074] Further, according to this embodiment, a punch plate 220
having a large number of holes with a size of, for example, about 3
mm is disposed at a position above the anode 48 within the plating
chamber 49. The punch plate 220 prevents a black film formed on the
surface of the anode 48 from curling up by the plating liquid 45
and consequently being flowed out.
[0075] The plating container 50 has first plating liquid discharge
ports 57 for withdrawing the plating liquid 45 contained in the
plating chamber 49 from the peripheral portion of the bottom in the
plating chamber 49, and second plating liquid discharge ports 59
for discharging the plating liquid 45 which has overflowed a weir
member 58 provided at the upper end of the plating container 50.
Further, the plating container 50 has third plating liquid
discharge ports 120 for discharging the plating liquid before
overflowing the weir member 58. The plating liquid which has flowed
through the second plating liquid discharge ports 59 and the third
plating liquid discharge ports 120 joins at the lower end of the
plating container 50, and then is discharged from the plating
container 50. Instead of providing the third plating liquid
discharge ports 120, as shown in FIGS. 9A through 9C, the weir
member 58 may have, in its lower part, openings 222 having a
predetermined width at predetermined intervals so that the plating
liquid 45 passes through the openings 222 and is then discharged to
the second plating liquid discharge ports 59.
[0076] With this arrangement, when the amount of plating liquid
supplied is large during plating, the plating liquid is discharged
to the exterior through the third plating liquid discharge ports
120 or is passed through the openings 222 and discharged to the
exterior through the second plating liquid discharge ports 59 and,
in addition, as shown in FIG. 9A, the plating liquid overflows the
weir member 58 is discharged to the exterior through the second
plating liquid discharge ports 59. On the other hand, during
plating, when the amount of plating liquid supplied is small, the
plating liquid is discharged to the exterior through the third
plating liquid discharge ports 120, or alternatively as shown in
FIG. 9B, the plating liquid is passed through the openings 222 and
discharged to the exterior through the second plating liquid
discharge ports 59. In this manner, this construction can easily
cope with the case where the amount of plating liquid supplied is
large or small.
[0077] Further, as shown in FIG. 9D, through holes 224 for
controlling the liquid level, which are located above the plating
liquid supply nozzles 53, and communicate with the plating chamber
49 and the second plating liquid discharge ports 59, are provided
at circumferentially predetermined pitches. Thus, when plating is
not performed, the plating liquid is passed through the through
holes 224, and is discharged to the exterior through the second
plating liquid discharge ports 59, thereby controlling the liquid
level of the plating liquid. During plating, the through holes 224
serve as an orifice for restricting the amount of the plating
liquid flowing therethrough.
[0078] As shown in FIG. 4, the first plating liquid discharge ports
57 are connected to the reservoir 226 through the plating liquid
discharge pipe 60a, and a flow controller 61a is provided in the
plating liquid discharge pipe 60a. The second plating liquid
discharge ports 59 and the third plating liquid discharge ports 120
join with each other within the plating container 50, and the
joined passage is then connected directly to the reservoir 226
through the plating liquid discharge pipe 60b.
[0079] The plating liquid which has flowed into the reservoir 226
is introduced by a pump 228 into the plating liquid regulating tank
40. This plating liquid regulating tank 40 is provided with a
temperature controller 230, and a plating liquid analyzing unit 232
for sampling the plating liquid and analyzing the sample liquid.
When a pump 234 is operated, the plating liquid is supplied from
the plating liquid regulating tank 40 through the filter 236 to the
plating liquid supply nozzles 53. A control valve 56 is provided in
the plating liquid supply pipe 55 extending from the plating liquid
regulating tank 40 to each of the plating sections 22 to make the
pressure on the secondary side constant.
[0080] Returning to FIG. 3 a vertical stream regulating ring 62 and
a horizontal stream regulating ring 63 are disposed within the
plating chamber 49 at a position near the internal circumference of
the plating chamber 49, so that the central portion of the liquid
surface is pushed up by an upward stream out of two divided upward
and downward streams of the plating liquid 45 within the plating
chamber 49, whereby the downward flow is smoothened and the
distribution of the current density is further uniformized. The
horizontal stream regulating ring 63 has a peripheral portion which
is fixed to the plating container 50, and the vertical stream
regulating ring 62 is connected to the horizontal stream regulating
ring 63.
[0081] On the other hand, the head 47 comprises a housing 70 which
is a rotatable and cylindrical receptacle having a downwardly open
end and has openings 96 on the circumferential wall, and vertically
movable pressing rods 242 having, in its lower end, a pressing ring
240. As shown in FIG. 8, an inwardly projecting ring-shaped
substrate holding member 72 is provided at the lower end of the
housing 70. A ring-shaped sealing member 244 is mounted on the
substrate holding member 72. The ring-shaped sealing member 244
projects inward, and the front end of the top surface in the
ring-shaped sealing member 244 projects upward in an annular
tapered form. Further, contacts 76 for a cathode electrode are
disposed above the sealing member 244. Air vent holes 75, which
extend outwardly in the horizontal direction and further extend
outwardly in an upwardly inclined state, are provided in the
substrate holding member 72 at circumferentially equal
intervals.
[0082] With this arrangement, as shown in FIG. 6, the liquid level
of the plating liquid is lowered, and as shown in FIGS. 7 and 8,
the substrate W is held by a robot hand H or the like, and inserted
into the housing 70 where the substrate W is placed on the upper
surface of the sealing member 244 of the substrate holding member
72. Thereafter, the robot hand H is withdrawn from the housing 70,
and the pressing ring 240 is then lowered to sandwich the
peripheral portion of the substrate W between the sealing member
244 and the lower surface of the pressing ring 240, thereby holding
the substrate W. In addition, upon holding of the substrate W, the
lower surface of the substrate W is brought into pressure contact
with the sealing member 244 to seal this contact portion
positively. At the same time, current flows between the substrate W
and the contacts 76 for a cathode electrode.
[0083] Returning to FIG. 3, the housing 70 is connected to an
output shaft 248 of a motor 246, and rotated by energization of the
motor 246. The pressing rods 242 are vertically provided at
predetermined positions along the circumferential direction of a
ring-shaped support frame 258 rotatably mounted through a bearing
256 on the lower end of a slider 254. The slider 254 is vertically
movable by actuation of a cylinder 252, with a guide, fixed to a
support 250 surrounding the motor 246. With this construction, the
pressing rods 242 are vertically movable by the actuation of the
cylinder 252, and, in addition, upon the holding of the substrate
W, the pressing rods 242 are rotated integrally with the housing
70.
[0084] The support 250 is mounted on a slide base 262 which is
vertically movable with a rotation of a ball screw 261 rotated by
energization of the motor 260. The support 250 is surrounded by an
upper housing 264, and is vertically movable together with the
upper housing 264 by energization of the motor 260. Further, a
lower housing 266 for surrounding the housing 70 during plating is
mounted on the upper surface of the plating container 50.
[0085] With this construction, as shown in FIG. 6, maintenance can
be performed in such a state that the support 250 and the upper
housing 264 are raised. A crystal of the plating liquid is likely
to deposit on the inner circumferential surface of the weir member
58. However, the support 250 and the upper housing 264 are raised,
a large amount of the plating liquid is flowed and overflows the
weir member 58, and hence the crystal of the plating liquid is
prevented from being deposited on the inner circumferential surface
of the weir member 58. A cover 50b for preventing the splash of the
plating liquid is integrally provided in the plating container 50
to cover a portion above the plating liquid which overflows during
plating process. By coating an ultra-water-repellent material such
as HIREC (manufactured by NTT Advance Technology) on the inner
surface of the cover 50b for preventing the splash of the plating
liquid, the crystal of the plating liquid can be prevented from
being deposited on the cover 50b.
[0086] Substrate centering mechanisms 270 located above the
substrate holding member 72 of the housing 70 for performing
centering of the substrate W, are provided at four places along the
circumferential direction in this embodiment. FIG. 10 shows the
substrate centering mechanism 270 in detail. The substrate
centering mechanism 270 comprises a gate-like bracket 272 fixed to
the housing 70, and a positioning block 274 disposed within the
bracket 272. This positioning block 274 is swingably mounted
through a support shaft 276 horizontally fixed to the bracket 272.
Further, a helical compression spring 278 is interposed between the
housing 70 and the positioning block 274. Thus, the positioning
block 274 is urged by the helical compression spring 278 so that
the positioning block 274 rotates about the support shaft 276 and
the lower portion of the positioning block 274 projects inwardly.
The upper surface 274a of the positioning block 274 serves as a
stopper, and is brought into connect with the lower surface 272a of
the bracket 272 to restrict the movement of the positioning block
274. Further, the positioning block 274 has a tapered inner surface
274b which is widened outward in the upward direction.
[0087] With this construction, a substrate is held by the hand of a
transfer robot or the like, is carried into the housing 70, and is
placed on the substrate holding member 72. In this case, when the
center of the substrate deviates from the center of the substrate
holding member 72, the positioning block 274 is rotated outwardly
against the urging force of the helical compression spring 278 and,
upon the release of holding of the substrate from the hand of the
transfer robot or the like, the positioning block 274 is returned
to the original position by the urging force of the helical
compression spring 278. Thus, the centering of the substrate can be
carried out.
[0088] FIG. 11 shows a feeding contact (a probe) 77 for feeding
power to a cathode electrode plate 208 having contacts 76 for a
cathode electrode. This feeding contact 77 is composed of a plunger
and is surrounded by a cylindrical protective member 280 extending
to the cathode electrode plate 208, whereby the feeding contact 77
is protected against the plating liquid.
[0089] The operation of the plating section 22 will now be
described.
[0090] First, in transporting the substrate to the plating section
22, the attracting hand of the third transporting device 28 shown
in FIG. 1, and the substrate W attracted and held with its front
face downward by the attracting hand are inserted into the housing
70 through an opening 96, and the attracting hand is then moved
downward. Thereafter, the vacuum attraction is released to place
the substrate W on the substrate holding member 72 of the housing
70. The attracting hand is then moved upward and withdrawn from the
housing 70. Thereafter, the pressing ring 240 is lowered down to
the peripheral portion of the substrate W so as to hold the
substrate W between the substrate holding member 72 and the lower
surface of the pressing ring 240.
[0091] The plating liquid 45 is then spurted from the plating
supply nozzles 53 while, at the same time, the housing 70 and the
substrate W held by it are allowed to rotate. When the plating
chamber is charged with a predetermined amount of the plating
liquid 45, and further after an elapse of several seconds, the
rotational speed of the housing 70 is decreased to a slow rotation
(e.g. 100 min.sup.-1). Then, electroplating is carried out by
passing an electric current between the anode 48 and the plating
surface of the substrate W as a cathode.
[0092] After the supply of the electric current, as shown in FIG.
9D, the feed of the plating liquid is decreased so that the liquid
is allowed to flow out only through the through holes 224 for
liquid level control positioned above the plating liquid injection
nozzle 53, thereby exposing the housing 70, together with the
substrate held by it, above the surface of the plating liquid. The
housing 70 and the substrate, positioned above the liquid surface,
are allowed to rotate at a high speed (e.g. 500-800 min.sup.-1) to
drain away the plating liquid by the action of centrifugal force.
After the completion of draining, the rotation of the housing 70 is
stopped so that the housing 70 stops at a predetermined
position.
[0093] After the housing 70 comes to a complete stop, the pressing
ring 240 is moved upward. Thereafter, the attracting hand of the
third transporting device 28 is inserted, with its attracting face
downward, into the housing 70 through the opening 96 and is then
lowered to a position at which the attracting hand can attract the
substrate. After attracting the substrate by vacuum attraction, the
attracting hand is moved upward to the position of the opening 96
of the housing 70, and is withdrawn, together with the substrate
held by the attracting hand, through the opening 96.
[0094] According to the plating section 22, the head 47 can be
designed to be compact and structurally simple. Further, the
plating can be carried out when the surface of the plating liquid
in the plating process container 46 lies at the plating level, and
the draining and the transport of the substrate can be carried out
when the surface of the plating liquid lies at the
substrate-transporting level. Moreover, the black film formed on
the surface of the anode 48 can be prevented from being dried and
oxidized.
[0095] FIG. 12 is a schematic view showing the cleaning/drying
section 12. In the cleaning/drying section 12, the surface and the
backside of the semiconductor substrate W are scrubbed with PVA
sponge rolls 9-2, 9-2. As cleaning water ejected from nozzles 9-4,
pure water is mainly used, but there may be used a surface active
agent, or a chelating agent, or a mixture of both which has been
adjusted in pH and conformed to the zeta potential of copper oxide.
The nozzle 9-4 may also be provided with an ultrasonic vibration
element 9-3 for applying ultrasonic vibrations to the cleaning
water to be ejected. The reference numeral 9-1 is a rotating roller
for rotating the semiconductor substrate W in a horizontal
plane.
[0096] The bevel-etching/chemical cleaning section 16 can perform
an edge (bevel) Cu etching and a backside cleaning at the same
time, and can suppress growth of a natural oxide film of copper at
the circuit formation portion on the surface of the substrate. FIG.
13 shows a schematic view of the bevel-etching/chemical cleaning
section 16. As shown in FIG. 13, the bevel-etching/chemical
cleaning section 16 comprises a substrate holding portion 422
positioned inside a bottomed cylindrical waterproof cover 420 and
adapted to rotate a substrate W at a high speed, in such a state
that the face of the substrate W faces upwardly, while holding the
substrate W horizontally by spin chucks 421 at a plurality of
locations along a circumferential direction of a peripheral edge
portion of the substrate; a center nozzle 424 placed above a nearly
central portion of the surface of the substrate W held by the
substrate holding portion 422; and an edge nozzle 426 placed above
the peripheral edge portion of the substrate W. The center nozzle
424 and the edge nozzle 426 are directed downward. A back nozzle
428 is positioned below a nearly central portion of the backside of
the substrate W, and directed upward. The edge nozzle 426 is
adapted to be movable in a diametrical direction and a height
direction of the substrate W.
[0097] The width of movement L of the edge nozzle 426 is set such
that the edge nozzle 426 can be arbitrarily positioned in a
direction toward the center from the outer peripheral end surface
of the substrate, and a set value for L is inputted according to
the size, usage, or the like of the substrate W. Normally, an edge
cut width C is set in the range of 2 mm to 5 mm. In the case where
a rotational speed of the substrate is a certain value or higher at
which the amount of liquid migration from the backside to the
surface is not problematic, the copper film within the edge cut
width C can be removed.
[0098] Next, the method of cleaning with this
bevel-etching/chemical cleaning section 16 will be described.
First, the semiconductor substrate W is horizontally rotated
integrally with the substrate holding portion 422, with the
substrate being held horizontally by the spin chucks 421 of the
substrate holding portion 422. In this state, an acid solution is
supplied from the center nozzle 424 to the central portion of the
surface of the substrate W. The acid solution may be a
non-oxidizing acid, and hydrofluoric acid, hydrochloric acid,
sulfuric acid, citric acid, oxalic acid, or the like is used. On
the other hand, an oxidizing agent solution is supplied
continuously or intermittently from the edge nozzle 426 to the
peripheral edge portion of the substrate W. As the oxidizing agent
solution, one of an aqueous solution of ozone, an aqueous solution
of hydrogen peroxide, an aqueous solution of nitric acid, and an
aqueous solution of sodium hypochlorite is used, or a combination
of these is used.
[0099] In this manner, the copper film, or the like formed on the
upper surface and end surface in the region of the peripheral edge
portion C of the semiconductor substrate W is rapidly oxidized with
the oxidizing agent solution, and is simultaneously etched with the
acid solution supplied from the center nozzle 424 and spreaded on
the entire surface of the substrate, whereby it is dissolved and
removed. By mixing the acid solution and the oxidizing agent
solution at the peripheral edge portion of the substrate, a steep
etching profile can be obtained, in comparison with a mixture of
them which is produced in advance being supplied. At this time, the
copper etching rate is determined by their concentrations. If a
natural oxide film of copper is formed in the circuit-formed
portion on the surface of the substrate, this natural oxide film is
immediately removed by the acid solution spreading on the entire
surface of the substrate according to rotation of the substrate,
and does not grow any more.
[0100] Specifically, the copper oxide film, which was formed on the
surface of the substrate in the plating, can thus be removed by
flowing HF over the substrate surface. Further, a copper oxide film
is not newly formed during the etching. When a copper oxide film
remains on the surface of the substrate, only the copper oxide
portion is preferentially polished away in a later CMP processing,
which adversely affects the flatness of the processed surface. This
can be avoided by the removal of the copper oxide film in the above
manner.
[0101] After the supply of the acid solution from the center nozzle
424 is stopped, the supply of the oxidizing agent solution from the
edge nozzle 426 is stopped. As a result, silicon exposed on the
surface is oxidized, and deposition of copper can be
suppressed.
[0102] Thus, the activated surface such as Si exposed on the
surface of the substrate, for example, can be oxidized and thereby
inactivated by later stopping the supply of H.sub.2O.sub.2. This
prevents adsorption of large particles onto the surface of the
substrate which can cause scratching in a later CMP processing. The
oxidation of copper by H.sub.2O.sub.2 and the removal of the
oxidized copper by HF, carried out repeatedly in the above manner,
can enhance the rate of copper removal as compared with the case
where the oxidation of copper and its removal are simultaneously
effected by using a mixture liquid of H.sub.2O.sub.2 and HF.
[0103] On the other hand, an oxidizing agent solution and a silicon
oxide film etching agent are supplied simultaneously or alternately
from the back nozzle 428 to the central portion of the backside of
the substrate. Therefore, copper or the like adhering in a metal
form to the backside of the semiconductor substrate W can be
oxidized with the oxidizing agent solution, together with silicon
of the substrate, and can be etched and removed with the silicon
oxide film etching agent. This oxidizing agent solution is
preferably the same as the oxidizing agent solution supplied to the
surface, because the types of chemicals are decreased in number.
Hydrofluoric acid can be used as the silicon oxide film etching
agent, and if hydrofluoric acid is used as the acid solution on the
surface of the substrate, the types of chemicals can be decreased
in number.
[0104] Thus, if the supply of the oxidizing agent is stopped first,
a hydrophobic surface is obtained. If the etching agent solution is
stopped first, a water-saturated surface (a hydrophilic surface) is
obtained, and thus the backside surface can be adjusted to a
condition which will satisfy the requirements of a subsequent
process. In this manner, the acid solution, i.e., etching solution
is supplied to the substrate to remove metal ions remaining on the
surface of the substrate W. Then, pure water is supplied to replace
the etching solution with pure water and remove the etching
solution, and then the substrate is dried by spin-drying. In this
way, removal of the copper film in the edge cut width C at the
peripheral edge portion on the surface of the semiconductor
substrate, and removal of copper contaminants on the backside are
performed simultaneously to thus allow this treatment to be
completed, for example, within 80 seconds. The etching cut width of
the edge can be set arbitrarily (to 2 mm to 5 mm), but the time
required for etching does not depend on the cut width.
[0105] FIGS. 14 through 17 show a rotatable holding device 440
particularly suited for use in the cleaning/drying section 12 and
in the bevel-etching/chemical cleaning section 16. The rotatable
holding device 440 is for rotating the substrate W while holding it
horizontally, and comprises a disk-shaped rotatable member 444 that
is set horizontally and rotated by a rotatable drive shaft 442, and
a plurality of holding members 446 for holding substrate W above
the rotatable member 444. The holding members 446 are mounted on
the peripheral portion of the rotatable member 444 and arranged
along a circle with the rotatable drive shaft 442 as a center, with
each two adjacent members being spaced at a predetermined distance
(60.degree. in the embodiment of FIG. 15). The holding members 446
engages the periphery W' of the substrate W, thereby holding the
substrate W horizontally. In FIG. 14, reference numeral 447 denotes
a belt driving device for connecting the rotatable drive shaft 442
to a motor M for driving, and H denotes a housing for accommodating
the rotatable holding device 440, that is adapted to prevent a
cleaning liquid or the like supplied to the substrate W from
scattering all around and correct the scattered liquid which is
discharged through a discharge pipe D.
[0106] FIG. 16 shows the details of each holding member 446. The
holding member 446 is substantially columnar, and has near its top
an engaging surface 444 formed an annular groove form. The engaging
surface 444 is adapted to make a friction engagement with the
periphery W' of the substrate W. The holding member 446 vertically
penetrates a slot 450, which is formed in the peripheral portion of
the rotatable member 444 and extends in the radial direction
thereof, and is rotatable mounted at its lower part, which extends
under the rotatable member 444, on a holding plate 452 that is
located beneath the rotatable member 444 and is so constructed that
it is allowed to rotate together with the rotatable member 444. The
holding member 446 is held on the holding plate 452 in such a
manner that it is allowed to rotatable about its own axis. Thus,
the holding plate 452 has, mounted thereon, a small-diameter shaft
454 extending vertically upward, whereas in the inside of the
holding member 446, a hole 456 is formed that extends upward from
the bottom of the holding member 446. The hole 456 is moveable
fitted with the small-diameter shaft 454, so that the holding
member 446 can rotatable about the small-diameter shaft 454 as a
center.
[0107] Further, a weight 458, extending horizontally, is mounted on
the lower end of the holding member 446. When the rotatable member
444 rotates about its axis of rotation, i.e. the rotatable drive
shaft 442,and the holding member 446 revolves around the shaft 442,
the weight 458 is forced to move (swing) by the action of
centrifugal force whereby the holding member 446 is allowed to
swivel (rotate) about its own axis (i.e. the shaft 454). The
position of the weight 458 shown by the solid line in FIG. 17
represents a home position, where the weight 458 is forced by
pressure through an elastic means, not shown. When a certain
centrifugal force is applied, the weight 458 is forced to move in
the direction of arrow A towards the position shown by the chain
line, whereby the substrate W is made to move in the direction of
arrow B.
[0108] The holding plated 452 is supported in such a manner that it
can move horizontally in the direction of arrow C, i.e. the radial
direction of the rotatable member 444 by a link mechanism or the
like, not shown, so that the holding member 446 can move along the
slot 450 between an engaging/holding position (the position shown
in FIG. 16) where the holding member 446 engages the periphery W'
of the substrate W and a release position spaced radially outwardly
from the engaging/holding position. Further, the holding plate 452
is pressed inwardly in the radial direction of the rotatable member
444 by a spring 460 so that the engaging surface 448 of the holding
member 446 in the engaging/holding position elastically engages the
periphery W' of the substrate W through the spring 460.
[0109] The operation of the rotatable holding device 440 for
holding and rotating the substrate W will now be described. First,
each holding member 446 is moved, against the pressure of the
spring 460, outwardly in the radial direction of the rotatable
member 444 to the release position. Thereafter, the substrate W is
set horizontally above the rotatable member 444, and the holding
member 446 is returned to the engaging/holding position to bring
the engaging surface 448 into engagement with the periphery W' of
the substrate W, thereby allowing the holding member 448 to
elastically hold the substrate W.
[0110] When the rotatable member 444 is driven to rotate and the
holding 446 revolves, a centrifugal force comes to act on the
weight 458. The centrifugal force acting on the weight 458 is weak
when the rotational speed of the rotatable member 444 is low, and
so the weight 458 is kept motionless due to the pressure by the
spring which forces the weight 458 in the home position. When the
rotational speed of the rotational member 444 is higher than a
particular value, the centrifugal force acting on the weight 458
exceeds the counter pressure of the spring and causes the weight
458 to swing, whereby the holding member 446 swings (rotates) about
its own axis. Since the holding member 446 is in friction
engagement with the periphery W' of the substrate W as described
above, the swinging of the holding member 446 makes the substrate W
rotate in the direction of arrow B shown in FIG. 17, thus shifting
the engaging portion to the periphery W' of the substrate W.
[0111] According to the embodiment shown in FIGS. 16 and 17, the
weight 458, whose center of gravity is eccentric to the central
axis of the holding member 446, is mounted on the holding member
446. The use of such an eccentric weight 458, enables the holding
member 446 to swing (rotate) about its own axis as it revolves.
However, the mechanism for the swinging (rotation) of the holding
member 446 is not limited thereto. Thus, for example, a link
mechanism may be connected to the holding member 446, and the
holding member 446 may be allowed to swing (rotate) through the
action of the link mechanism.
[0112] The rotatable holding device 440, which has the above
structural features and technical effects. When cleaning is
performed to the substrate W while it is held and rotated by the
rotatable holding device 440, for example, the peripheral portions
of the substrate W in engagement with the holding members 446 can
be shifted during the cleaning treatment, whereby a cleaning liquid
can reach to the entire peripheral area of the substrate W, thus
enabling a satisfactory cleaning treatment.
[0113] Though the rotatable holding device 440 can be applied to
any cleaning device, it is most suitably employed in the
bevel-etching/chemical cleaning device 16 shown in FIG. 1. The use
of the rotatable holding device 440 in the bevel-etching/chemical
cleaning device 16, while ensuring the holding of the substrate W,
can shift the edge portion (the periphery W') of the substrate W in
engagement with the holding member 446, whereby etching can be
effected to every edge and bevel portion of the substrate W.
[0114] FIGS. 18A through 18C are views showing a constitution
example of the transporting device 26 and the dry state film
thickness measuring instrument 413 provided on the hand of the
transporting device 26. FIG. 18A is a view showing the appearance
of the transporting device 26, and FIGS. 18B and 18C are a plan
view and a cross-sectional view of the robot hand, respectively. As
illustrated, the transporting device 26 has two hands 3-1, 3-1 at
upper and lower sides, and the hands 3-1, 3-1 are attached to front
ends of arms 3-2, 3-2, respectively, so as to be swingably movable.
The hands 3-1, 3-1 can scoop up the semiconductor substrate W (drop
the semiconductor substrate W into the recesses) and transport it
to a predetermined location.
[0115] A plurality of (four in the drawing) eddy current sensors
413a constituting the dry state film thickness measuring instrument
413 are provided in a recessed surface of the hand 3-1 for the
semiconductor substrate W, and can measure the film thickness of
the semiconductor substrate W placed thereon.
[0116] By thus providing the transporting device 26 with the
dry-state film thickness measuring device 413, it becomes possible
to measure the film thickness on the robot hands 3-1, 3-1. The
results of film-thickness measurement may be stored as a record of
the substrate W processing. Further, the measurement results may be
relied on in deciding whether or not the substrate can be sent to
the next step. It is possible to provide the dry-state film
thickness measuring device 413 in the transporting device 28 which
has a similar construction to that of the transporting device
26.
[0117] A plating method of the present invention will now be
described by referring to FIG. 19. According to this embodiment, of
the four plating sections 22 as shown in FIG. 1, one is employed as
a first plating section 22a for a first-stage plating and the other
three are employed as second plating sections 22b for second-stage
plating. The first-stage plating in the first plating section 22a
is to reinforce the thin portion in the seed layer 7 as shown in
FIG. 40A so as to obtain a uniform thickness of seed layer 7, and
the second-stage plating in the second plating sections 226 is to
deposit copper onto the reinforced seed layer for filling with
copper.
[0118] In the first plating section 22a, a plating liquid (first
plating liquid) is used, as the plating liquid 45 (see FIG. 3),
which contains divalent copper ions, a complexing agent and a pH
adjusting agent, and does not contain any alkali metal nor any
cyanide, and which has an excellent uniform electrodeposition
property, e.g. a plating liquid consisting of copper pyrophosphate,
pyrophosphoric acid and choline. The first plating liquid is
maintained within a pH range of 7-14, preferably at a pH of about
9, by the addition of the pH adjusting agent such as cholin. This
avoids a case where the complex fails to effectively combine with
copper and forms an incomplete complex when the pH is too low, or a
case where a variant form of complex is formed to produce a
sediment when the pH is too high. The pH adjusting agent is not
always necessary. The divalent copper ions are produced by the
dissolution of a copper salt such as copper pyrophosphate, copper
sulfate, copper acetate, copper chloride, EDTA-Cu, copper
carbonate, copper nitrate, or copper sulfamate.
[0119] In the second plating section 22b, a copper sulfate plating
liquid (second plating liquid) containing copper sulfate and
sulfuric acid, and having an excellent leveling property is used as
the plating liquid 45 (see FIG. 3).
[0120] First, the substrate W having a seed layer 7 (see FIG. 39A)
as an outer layer is taken one by one from the loading/unloading
section 10 by the first transporting device 24, and is transported,
via the first substrate stage 14 and the second substrate stage 18,
to the first plating section 22a (step 1).
[0121] Next, the first-stage plating is carried out in the first
plating section 22a, using the first plating liquid, thereby
reinforcing and completing the thin portion of the seed layer 7
(step 2). The first plating liquid used in the first plating
section 22a, e.g. a plating liquid comprising copper pyrophosphate
as a base, and a complexing agent such as pyrophosphoric acid, has
a higher polarization than a usual copper sulfate plating liquid
(second plating liquid). "High polarization" herein means that the
ratio of the degree of change in voltage to the degree of change in
current density is high, that is, the degree of change in current
density is relative to a fluctuation of potential is low. Referring
to the cathode polarization curves shown in FIG. 20, for example,
the ratio b/(D.sub.2-D.sub.1) for the bath B is higher than the
ratio a/(D.sub.2-D.sub.1) for the bath A, indicating that the bath
B has a higher polarization than bath A. Thus, the plating liquid
having a high polarization such as the bath B, when used in the
plating of the substrate having a seed layer 7 in which a
difference in film thickness exists, which produces a potential
difference upon supply of electric current, can make the change in
current density small. This makes it possible to raise the
deposition potential and improve uniform electrodeposition
property, whereby it becomes possible to deposit a plating even on
the thin portion of the seed layer, which has been difficult with a
usual copper sulfate plating liquid.
[0122] The complex itself and the pH adjusting agent is free from
an alkali metal. Deterioration of the semiconductor properties
cause by the inclusion of an alkali metal in the film can therefore
be avoided.
[0123] Direct current, pulse, PR pulse, etc. may be employed as a
power source. Of these, pulse and PR pulse are preferred. The use
of such a power source can improve the diffusion of copper ions to
thereby further improve the uniform electrodeposition property, can
flow a larger electric current than direct current to thereby make
the deposited copper film denser, and can shorten the plating
time.
[0124] When a direct current power source is employed, an
applicable current density is in the range of 0.01 A/dm.sup.2-30
A/dm.sup.2, preferably 0.1 A/dm.sup.2-3 A/dm.sup.2. In the case of
a pulse power source, a current density of 0.01 A/dm.sup.2-200
A/dm.sup.2 is applicable. The above ranges of current density can
prevent the lowering of productivity, and can prevent the
occurrence of "burnt deposit". The temperature of the
copper-plating liquid may be in the range of 10.degree.
C.-80.degree. C., preferably about 25.degree. C. When the liquid
temperature is too low, the deposition efficiency is low and the
physical properties of the plating become poor. When the liquid
temperature is too high, the stability (uniformity) of the plating
liquid is lowered, making its management difficult.
[0125] After the completion of the first-stage plating, the
substrate W is, according to necessity, transported to the washing
section 20 for washing by water (step 3), and is then transported
to one of the second plating sections 22b.
[0126] Next, the second-stage plating is performed onto the surface
of the substrate W in the second plating section 22b, using a
copper sulfate plating liquid (second plating liquid) having an
excellent leveling property, which has a composition of a high
copper sulfate concentrate and a low sulfuric acid concentration,
e.g. a composition of 100-300 g/l of copper sulfate and 10-100 g/l
of sulfuric acid, and which further contains an additive for
enhancing the leveling property, thereby effecting filling with
copper (step 4). Since the seed layer 7 (see FIG. 39A and FIG. 40A)
has been reinforced by the first-stage plating to become a complete
layer without a thin portion, electric current flows evenly through
the seed layer 7 in the second-stage plating, whereby the filling
with copper can be completed without the formation of any
voids.
[0127] For example, a nitrogen-containing organic compound may be
used as an additive for enhancing the leveling property. Specific
examples include phenatidine compounds; phthalocyanine compounds;
polyalkylene imine, such as polyethylene imine and polybenzyl
imine, or a derivative thereof; thiourea derivatives such as N-dye
substituted compounds; safranine compounds such as phenosafranine,
safranine azonaphthol, diethyl safranine azophenal and dimethyl
safranine dimethyl aniline; polyepichlorohydrin or its derivative;
phenyl thiazonium compounds such as thioflanin; and amides such as
acrylamide, propylamide and polyacrylamide.
[0128] The "leveling property" herein refers to a property of
giving a flat plating surface. The use of the plating liquid having
an excellent leveling property can retard the growth of plating at
the inlet of a fine recess. This makes it possible to fully fill
the fine recesses with copper uniformly without formation of any
void, and further flatten the plating surface.
[0129] The polarization range (deposition potential of copper) of
the first plating liquid may be about -0.2 V or lower, preferably
from about -1.5 V to about -0.2 V when an Ag--AgCl electrode is
used, and the polarization range (deposition potential of copper)
of the second plating liquid may be from about 0.1 V to about -0.1
V when an Ag--AgCl electrode is used.
[0130] The inside of a contact hole, especially the side wall on
the lower side of a contact hole, generally has a low conductivity
(high resistance, i.e. high deposition potential) because of the
thin thickness of the seed layer, and therefore a copper plating is
hard to deposit thereon with the use of a plating liquid having a
low polarization. By using as the first plating liquid, a plating
liquid which has a high polarization and which allows copper
deposition only when a high voltage is applied, copper film can be
deposited evenly on the entire wall of the surface of the seed
layer having different thickness and deposition potential.
[0131] After the completion of the second-stage plating, the
substrate W is, according to necessity, transported to the washing
section 20 for washing by water (step 5). Thereafter, the substrate
W is transported to the bevel-etching/chemical cleaning section 16
where the substrate W is cleaned by using a chemical liquid, and a
thin copper film, etc. formed on the bevel portion of the substrate
W is etched away (step 6). The substrate is then transported to the
cleaning/drying section 12 for cleaning and drying (step 7).
Thereafter, the substrate is returned to the cassette of the
loading/unloading section 10 by the first transporting device 24
(step 8).
[0132] A process of annealing a substrate W may be performed
between the Step 7 and the Step 8. When a substrate W is annealed
at 200-500.degree. C., preferably about 400.degree. C., the
electric characteristics of copper film formed on the substrate W
can be improved. For example, if the bevel-etching/chemical
cleaning section 16 has a supplementary function of a cleaning and
drying unit, then an annealing section (annealing unit) may be
provided instead of the cleaning/drying section 12.
[0133] Another embodiment of the plating method of the present
invention will be described below, by referring to FIG. 21.
According to this embodiment, all of the four plating sections 22
shown in FIG. 1 are used for filling with copper. The reinforcement
of the thin portion of a seed layer, carried out in the above
described embodiment, is not carried out in this embodiment.
[0134] In the plating section 22, a plating liquid is used as the
copper-plating liquid 45 (see FIG. 3) which contains divalent
copper ions, a complexing agent and a pH adjusting agent, and
further contains a thiazole additives, for example, for enhancing
the copper-filling property. The other features of the plating
liquid are substantially the same as the copper-plating liquid (the
first plating liquid) to be used in the first plating section 22a
according to the first embodiment of the present invention.
[0135] First, the substrate W having a seed layer 7 (see FIG. 39A)
as an outer layer is taken one by one from the loading/unloading
section 10 by the first transporting device 24, and is transported,
via the first substrate stage 14 and the second substrate stage 18,
to one of the plating sections 22 (step 1).
[0136] Next, plating is performed in the plating section 22 using
the above plating liquid, thereby effecting filling with copper
(step 2). The plating liquid used in this plating has the same high
polarization as the first plating liquid to be used in the first
plating section 22a according to the first embodiment of the
present invention. Due to the high polarization, the plating liquid
can raise the deposition potential and improve uniform
electrodeposition property, whereby it becomes possible to deposit
copper even on the thin portion of the seed layer, which has been
difficult with a usual copper sulfate plating liquid. Further, the
plating liquid can grow the plating so as to effect complete
filling with copper into the fine recesses in the substrate without
formation of any void. The plating conditions are substantially the
same as in the first-plating according to the first embodiment of
the present invention.
[0137] After the completion of plating, the substrate W is,
according to necessity, transported to the washing section 20 for
washing by water (step 3). Thereafter, the substrate W is
transported to the bevel-etching/chemical cleaning section 16 where
the substrate W is cleaned by using a chemical liquid, and a thin
copper film, etc. formed on the bevel portion of the substrate W is
etched away (step 4). The substrate is then transported to the
cleaning/drying section 12 for cleaning and drying (step 5).
Thereafter, the substrate is returned to the cassette of the
loading/unloading section 10 by the first transporting device 24
(step 6).
[0138] Annealing process may be carried out between cleaning and
drying process (step 5) and unloading process (step 6) shown in
FIG. 19.
[0139] The present invention will now be illustrated by the
following working examples. First, copper-plating liquids having
the complex bath compositions 1-4 shown in Table 1 and
copper-plating liquids having the copper sulfate bath compositions
1 and 2 shown in Table 2 were prepared. FIG. 22 shows
current-electrical potential curves for the complex baths 1-3 and
the copper sulfate bath 1. As can be seen from FIG. 22, each of the
complex baths 1-3 have a higher polarization than the copper
sulfate bath 1.
1 TABLE 1 A B C D E F Complex bath 20 60 0 0 200 0 composition 1
Complex bath 40 120 0 0 400 5 composition 2 Complex bath 0 0 10 30
0 0 composition 3 Complex bath 0 0 20 50 0 5 composition 4 Note: A:
Copper pyrophosphate (g/L) B: Pyrophosphoric aid (g/L) C: Copper
sulfate (g/L) D: EDTA-4H (g/L) E: Cholin (ml/L) F: Organic additive
(ml/L)
[0140]
2 TABLE 2 A B C D Copper sulfate 200 50 0.2 5 composition 1 Copper
sulfate 70 185 0.2 5 composition 2 Note: A: Copper sulfate (g/L) B:
Sulfuric acid (ml/L) C: Hydrochloric acid (ml/L) D: Organic
additive (ml/L)
EXAMPLE 1
[0141] By using the copper-plating liquid having the complex bath
composition 1 as the copper-plating liquid to be used in the first
plating section 22a according to the first embodiment of the
present invention, a first-stage plating (reinforcement of seed
layer) was performed at a current density of 0.5 A/dm.sup.2 for 25
seconds. Thereafter, by using the copper-plating liquid having the
copper sulfate bath composition 1 as the copper-plating liquid for
the second plating section 22b, a second-stage plating (filling
with copper) was performed at a current density of 2.5 A/dm.sup.2
for 2 minutes.
EXAMPLE 2
[0142] By using the copper-plating liquid having the complex bath
composition 2 as the copper-plating liquid to be used in the
plating section 22 according to the second embodiment of the
present invention, plating (filling with copper) was performed at a
current density of 1 A/dm.sup.2 for 5 minutes.
EXAMPLE 3
[0143] By using the copper-plating liquid having the complex bath
composition 3 as the copper-plating liquid to be used in the first
plating section 22a according to the first embodiment of the
present invention, a first-stage plating (reinforcement of seed
layer) was performed at a current density of 0.5 A/dm.sup.2 for 25
seconds. Thereafter, by using the copper-plating liquid having the
copper sulfate bath composition 1 as the copper-plating liquid for
the second plating section 22b, a second-stage plating (filling
with copper) was performed at a current density of 2.5 A/dm.sup.2
for 2 minutes.
EXAMPLE 4
[0144] By using the copper-plating liquid having the complex bath
composition 4 as the copper-plating liquid to be used in the
plating section 22 according to the second embodiment of the
present invention, plating (filling with copper) was performed at a
current density of 1 A/dm.sup.2 for 5 minutes.
COMPARATIVE EXAMPLE 1
[0145] By using the copper-plating liquid having the copper sulfate
bath composition 1, plating (filling with copper) was performed at
a current density of 2.5 A/dm.sup.2 for 2 minutes.
COMPARATIVE EXAMPLE 2
[0146] By using the copper-plating liquid having the copper sulfate
bath composition 2, plating (filling with copper) was performed at
a current density of 2.5 A/dm.sup.2 for 2 minutes.
[0147] With respect to the copper platings obtained in the above
Examples 1-4 and Comparative Examples 1 and 2, the state of copper
plating filled with a fine recess was observed under SEM to examine
the presence or absence of defects. The results are shown in Table
3 below. In Table 3, "poor electrodeposition" indicates such a
state of plating as shown in FIG. 23A: no deposition of copper at
the bottom of the recess, thus forming void V.sub.1; "seam void"
indicates the formation in the copper of a seam-like void V.sub.2
as shown in FIG. 23B; and "particulate void" indicates the
formation in the copper of a particulate void V.sub.3 as shown in
FIG. 23C.
3TABLE 3 Poor Particulate Example No. electrodeposition Seam void
void Example 1 None None None Example 2 None None None Example 3
None None None Example 4 None None None Comp. Example 1 None Found
Found Comp. Example 2 Found Found Found
[0148] The data in Table 3 demonstrates that, in Example 1-4, the
filling with copper was completely effected without suffering from
"poor electrodeposition" and formation of voids.
[0149] Next, copper-plating liquids having the complex bath
compositions 1-4 shown in Table 4 and copper-plating liquids having
the copper sulfate bath compositions 1 and 2 shown in Table 5 were
prepared. By using these plating liquids, plating treatments were
performed in the same manner as in Examples 1-4 and Comparative
Examples 1 and 2. The results were almost the same as in the
preceding examples.
4 TABLE 4 A B C D E Complex bath 13 45 130 0 0 composition 1
Complex bath 26 98 260 5 composition 2 Complex bath 13 45 0 160 0
composition 3 Complex bath 26 98 320 5 composition 4 Note: A:
Copper pyrophosphate (g/L) B: Pyrophosphoric acid (g/L) C: Cholin
(ml/L) D: TMAH (tetramethyl ammonium hydroxide) (ml/L) E: Organic
additive (ml/L)
[0150]
5 TABLE 5 A B C D Copper sulfate 200 50 0.135 5 composition 1
Copper sulfate 70 185 0.135 5 composition 2 Note: A: Copper sulfate
(g/L) B: Sulfuric acid (ml/L) C: Hydrochloric acid (ml/L) D:
Organic additive (ml/L)
[0151] As described hereinabove, according to the present
invention, the inclusion of a completing agent in the
copper-plating liquid can enhance the polarization as the plating
bath. This enables reinforcement of the thin portion of a seed
layer and uniform filling with copper into the depths of fine
recesses, such as trenches and holes, having a high aspect ratio.
Further, the deposited plating is dense, and is freed from
microvoids formation therein. Furthermore, the copper-plating
liquid of the present invention, which does not contain any alkali
metal nor cyanide, does not cause deterioration of a semiconductor
which would otherwise be caused by electromigration due to the
presence of an alkali metal and, in addition, does meet the demand
for avoiding the use of a cyanide.
[0152] FIG. 24 is a plane view of another embodiment of a plating
apparatus in accordance with the present invention. The plating
apparatus comprises a loading/unloading section 604, two annealing
sections 606 and washing sections 608. These sections are disposed
around a first transporting device 600 and a second transporting
device 602. The apparatus is also provided with a plating liquid
supplying system 614 for supplying a plating liquid to each plating
sections 610.
[0153] When two-stage plating which consists of reinforcing a seed
layer and filling with copper, as shown in FIG. 19, is carried out
by this plating apparatus, at least one of the four plating
sections 610 is used as a first plating section using the first
plating liquid having the same composition described above, and
others are used as second plating sections using the first plating
liquid having the same composition described above.
[0154] FIG. 25A through 25C illustrate, in a sequence of process
steps, an example for forming interconnects made of copper by
plating a surface of a substrate, thereafter forming a protective
film on the interconnects selectively by electroless plating for
protecting the interconnects.
[0155] In the semiconductor substrate W, as shown in FIG. 25A, an
insulating film 102 comprising SiO.sub.2 is deposited on a
conductive layer 101a of a substrate 100 on which semiconductor
devices are formed, a contact hole 103 and a trench 4 for an
interconnect are formed by lithography and etching technology, a
barrier layer 105 comprising TiN or the like is formed thereon, and
a seed layer 107 is further formed thereon. The seed layer 107 may
be formed beforehand by sputtering, and a reinforcing seed layer
for reinforcing the seed layer 107 may be formed thereon. As shown
in FIG. 25B, copper plating is applied onto the surface of the
semiconductor substrate W to fill copper into the contact hole 103
and the trench 104 of the semiconductor substrate W and deposit a
copper film 106 on the insulating film 102. Thereafter, the copper
film 106 on the insulating film 102 is removed by chemical
mechanical polishing (CMP) to make the surface of the copper film
106, filled into the contact hole 103 and the trench 104 for an
interconnect, flush with the surface of the insulating film 102, as
shown in FIG. 25C. An interconnect protective film 108 is formed on
the exposed metal surface.
[0156] FIG. 26 is a schematic constitution drawing of the
electroless plating apparatus. As shown in FIG. 26, this
electroless plating apparatus comprises holding means 311 for
holding a semiconductor substrate W to be plated on its upper
surface, a dam member 331 for contacting a peripheral edge portion
of a surface to be plated (upper surface) of the semiconductor
substrate W held by the holding means 311 to seal the peripheral
edge portion, and a shower head 341 for supplying a plating liquid
to the surface, to be plated, of the semiconductor substrate W
having the peripheral edge portion sealed with the dam member 331.
The electroless plating apparatus further comprises cleaning liquid
supply means 351 disposed near an upper outer periphery of the
holding means 311 for supplying a cleaning liquid to the surface,
to be plated, of the semiconductor substrate W, a recovery vessel
361 for recovering a cleaning liquid or the like (plating waste
liquid) discharged, a plating liquid recovery nozzle (not shown)
for sucking in and recovering the plating liquid held on the
semiconductor substrate W, and a motor (rotational drive means) M
for rotationally driving the holding means 311.
[0157] Lamp heaters 317 are disposed above the holding means 311,
and the lamp heaters 317 and a shower head 341 are integrated. For
example, a plurality of ring-shaped lamp heaters 317 having
different radii are provided concentrically, and many nozzles 343
of the shower head 341 are open in a ring form from the gaps
between the lamp heaters 317. The lamp heaters 317 may be composed
of a single spiral lamp heater, or may be composed of other lamp
heaters of various structures and arrangements.
[0158] The holding means 311 has a substrate placing portion 313 on
its upper surface for placing and holding the semiconductor
substrate W. The substrate placing portion 313 is adapted to place
and fix the semiconductor substrate W. Specifically, the substrate
placing portion 313 has a vacuum attracting mechanism (not shown)
for attracting the semiconductor substrate W to a backside thereof
by vacuum suction. This holding means 311 is adapted to be rotated
by the motor M and is movable vertically by raising and lowering
means (not shown). The dam member 331 is tubular, has a seal
portion 333 provided in a lower portion thereof for sealing the
outer peripheral edge of the semiconductor substrate W, and is
installed so as not to move vertically from the illustrated
position.
[0159] The shower head 341 is of a structure having many nozzles
343 provided at the front end for scattering the supplied plating
liquid in a shower form and supplying it substantially uniformly to
the surface, to be plated, of the semiconductor substrate W. The
cleaning liquid supply means 351 has a structure for ejecting a
cleaning liquid from a nozzle 353. The plating liquid recovery
nozzle is adapted to be movable upward and downward and swingable,
and the front end of the plating liquid recovery nozzle is adapted
to be lowered inwardly of the dam member 331 to suck in the plating
liquid on the semiconductor substrate W.
[0160] Next, the operation of the electroless plating apparatus
will be described. First, the holding means 311 is lowered from the
illustrated state to provide a gap of a predetermined dimension
between the holding means 311 and the dam member 331, and the
semiconductor substrate W is placed on and fixed to the substrate
placing portion 313. An 8 inch wafer, for example, is used as the
semiconductor substrate W.
[0161] Then, the holding means 311 is raised to bring its upper
surface into contact with the lower surface of the dam member 331
as illustrated, and the outer periphery of the semiconductor
substrate W is sealed with the seal portion 333 of the dam member
331. At this time, the surface of the semiconductor substrate W is
in an open state.
[0162] Then, the semiconductor substrate W itself is directly
heated by the lamp heaters 317 to render the temperature of the
semiconductor substrate W, for example, 70.degree. C. (maintained
until termination of plating). Then, the plating liquid heated, for
example, to 50.degree. C. is ejected from the shower head 341 to
pour the plating liquid over substantially the entire surface of
the semiconductor substrate W. Since the surface of the
semiconductor substrate W is surrounded by the dame member 331, the
poured plating liquid is all held on the surface of the
semiconductor substrate W. The amount of the supplied plating
liquid may be a small amount which will become a 1 mm thickness
(about 30 ml) on the surface of the semiconductor substrate W. The
depth of the plating liquid held on the surface to be plated may be
10 mm or less, and may be even 1 mm as in this embodiment. If a
small amount of the supplied plating liquid is sufficient as
described above, the heating apparatus for heating the plating
liquid may be of a small size. In this embodiment, the temperature
of the semiconductor substrate W is raised to 70.degree. C., and
the temperature of the plating liquid is raised to 50.degree. C. by
heating. Thus, the surface, to be plated, of the semiconductor
substrate W becomes, for example, 60.degree. C., and hence a
temperature optimal for a plating reaction can be achieved. If the
semiconductor substrate W itself is adapted to be heated as
described above, the temperature of the plating liquid requiring a
great electric power consumption for heating need not be raised so
high. This is preferred, because the electric power consumption can
be decreased, and a change in the property of the plating liquid
can be prevented. The electric power consumption for heating of the
semiconductor substrate W itself may be small, and the amount of
the plating liquid stored on the semiconductor substrate W is also
small. Thus, heat retention of the semiconductor substrate W by the
lamp heaters 317 can be performed easily, and the capacity of the
lamp heaters 317 may be small, and the apparatus can be made
compact. If means for directly cooling the semiconductor substrate
W itself is used, switching between heating and cooling may be
performed during plating to change the plating conditions. Since
the plating liquid held on the semiconductor substrate is in a
small amount, temperature control can be performed with good
sensitivity.
[0163] The semiconductor substrate W is instantaneously rotated by
the motor M to perform uniform liquid wetting of the surface to be
plated, and then plating of the surface to be plated is performed
in such a state that the semiconductor substrate W is in a
stationary state. Specifically, the semiconductor substrate W is
rotated at 100 rpm or less for only 1 second to uniformly wet the
surface, to be plated, of the semiconductor substrate W with the
plating liquid. Then, the semiconductor substrate W is kept
stationary, and electroless plating is performed for 1 minute. The
instantaneous rotating time is 10 seconds or less at the
longest.
[0164] After completion of the plating treatment, the front end of
the plating liquid recovery nozzle is lowered to an area near the
inside of the dam member 331 on the peripheral edge portion of the
semiconductor substrate W to suck in the plating liquid. At this
time, if the semiconductor substrate W is rotated at a rotational
speed of, for example, 100 rpm or less, the plating liquid
remaining on the semiconductor substrate W can be gathered in the
portion of the dam member 331 on the peripheral edge portion of the
semiconductor substrate W under centrifugal force, so that recovery
of the plating liquid can be performed with a good efficiency and a
high recovery rate. The holding means 311 is lowered to separate
the semiconductor substrate W from the dam member 331. The
semiconductor substrate W is started to be rotated, and the
cleaning liquid (ultrapure water) is jetted at the plated surface
of the semiconductor substrate W from the nozzle 353 of the
cleaning liquid supply means 351 to cool the plated surface, and
simultaneously perform dilution and cleaning, thereby stopping the
electroless plating reaction. At this time, the cleaning liquid
jetted from the nozzle 353 may be supplied to the dam member 331 to
perform cleaning of the dam member 331 at the same time. The
plating waste liquid at this time is recovered into the recovery
vessel 361 and discarded.
[0165] The plating liquid once used is not reused, but thrown away.
As described above, the amount of the plating liquid used in this
apparatus can be made very small, compared with that in the prior
art. Thus, the amount of the plating liquid which is discarded is
small, even without reuse. In some cases, the plating liquid
recovery nozzle 365 may not be installed, and the plating liquid
which has been used may be recovered as a plating waste liquid into
the recovery vessel 361, together with the cleaning liquid.
[0166] Then, the semiconductor substrate W is rotated at a high
speed by the motor M for spin-drying, and then the semiconductor
substrate W is removed from the holding means 311.
[0167] FIG. 27 is a plan view showing another embodiment of a
plating apparatus which includes polishing units integrally so that
a surface of a substrate can be polished immediately after plating.
This plating apparatus comprises substrate cassettes 531, 531 for
loading and unloading, plating section 512, cleaning sections 535,
535 for cleaning substrates, two transporting devices 514a, 514b,
reversing machines 539, 539, and polishing units (substrate
processing modules) 541, 541, and spin dryer 534.
[0168] The flow of a substrate W is, for example, as follows:
First, the transporting device 514a withdraws the substrate W
before treatment from one of the substrate cassettes 531 for
loading. After plating treatment is performed by the plating
section 512, the transporting device 514a transfers the substrate W
to one of the reversing machines 539, which directs its treated
surface downward. Then, the substrate W is transferred to the other
transporting device 514b. The transporting device 514b transfers
the substrate W to one of the polishing units 541 in which
predetermined polishing is performed. The substrate W after
polishing is withdrawn by the transporting device 514b, and cleaned
by one of the cleaning sections 535. Then, the substrate W is
transferred to the other polishing unit 541 where it is polished
again, and the substrate W is transported by the transporting
device 514b to the other cleaning section 535 where it is cleaned.
The substrate W after cleaning is transported by the transporting
device 514b to the other reversing machine 539 where its treated
surface is turned over to face upward. Then, the substrate W is
transported by the transporting device 514a to the spin dryer 534
in which spin-drying is carried out, and the substrate W is
accommodated again by the transporting device 514a in the substrate
cassette 531 for unloading.
[0169] FIG. 28 shows an embodiment of the polishing unit 541 of
this type. As shown in FIG. 28, the top ring 10-2 attracts the
semiconductor substrate W by suction, and brings the surface of the
plated copper film 6 (see FIG. 39B) of the semiconductor substrate
W into contact with a polishing surface 10-1a of the polishing
table 10-1 under pressure to perform a polishing. With the
polishing, the plated copper film 6 is basically polished. The
polishing surface 10-1a of the polishing table 10-1 is composed of
foamed polyurethane such as IC1000, or a material having abrasive
grains fixed thereto or impregnated therein. Upon relative
movements of the polishing surface 10-1a and the semiconductor
substrate W, the plated copper film 6 is polished.
[0170] Silica, alumina, ceria, or the like is used as abrasive
grains for performing polishing of the plated copper film 6, or as
a slurry ejected from a slurry nozzle 10-6. A mainly acidic
material for oxidizing Cu, such as hydrogen peroxide, is used as an
oxidizing agent. A temperature controlled fluid piping 544 for
passing a liquid whose temperature is adjusted to a predetermined
value is connected to the interior of the polishing table 10-1 in
order to maintain the temperature of the polishing table 10-1 at a
predetermined value. A temperature regulator 10-7 is provided on
the slurry nozzle 10-6 in order to maintain the temperature of the
slurry at a predetermined value. Water or the like used for
dressing is also controlled in temperature, although this is not
shown. In this manner, temperature of the polishing table 10-1, the
temperature of the slurry, and the temperature of water or the like
used for dressing are maintained at predetermined values, whereby
the chemical reaction rate is kept constant. Particularly, for the
polishing table 10-1, ceramics with high thermal conductivity, such
as alumina or SiC, are used.
[0171] An eddy current film thickness measuring instrument 10-8 or
an optical film thickness measuring instrument 10-9 provided in the
polishing table 10-1 is used for detection of an end point of the
polishing. Film thickness measurement of the plated copper film 6,
or surface detection of the barrier layer 5 (see FIG. 39A) is
performed, and when the film thickness of the plated Cu film 6
reaches zero or when the surface of the barrier layer 5 is
detected, polishing (primary polishing) is judged to have reached
its end point.
[0172] FIG. 29 is a view showing the constitution of a cleaning
mechanism for cleaning the polishing surface 10-1a of the polishing
table 10-1. As illustrated, a plurality of (four in the drawing)
mixing nozzles 10-11a to 10-11d for mixing pure water and a
nitrogen gas and ejecting the mixture are disposed above the
polishing table 10-1. Each of the mixing nozzles 10-11a to 10-11d
is supplied with a nitrogen gas whose pressure has been controlled
by a regulator 216 from a nitrogen gas supply source 214 through an
air operator valve 218, and is also supplied with pure water whose
pressure has been controlled by a regulator 217 from a pure water
supply source 215 through an air operator valve 219.
[0173] The mixed gas and liquid undergo changes in parameters, such
as the pressure and temperature of the liquid and/or gas and the
nozzle shape, by the nozzles. The liquid to be supplied is
transformed by nozzle jetting as follows: {circle over (1)}
formation of liquid fine particles, {circle over (2)} formation of
solid fine particles upon solidification of the liquid, {circle
over (3)} gasification of the liquid upon evaporation (hereinafter,
{circle over (1)}, {circle over (2)}, {circle over (3)} are called
atomization). A mixture of a liquid-based component and a gas
component is jetted, with predetermined directional properties,
toward the polishing surface on the polishing table 10-1.
[0174] When the polishing surface 10-1a is to be regenerated
(dressed) upon relative movements of the polishing surface 10-1a
and the dresser 10-10, a mixed fluid of pure water and a nitrogen
gas is ejected from the mixing nozzles 10-11a to 11-11d toward the
polishing surface 10-1a to clean it. The pressure of the nitrogen
gas and the pressure of pure water can be set independently. In the
present embodiment, manually driven regulators are used along with
a pure water line and a nitrogen line, but regulators whose setting
pressures can be changed based on external signals may be used. As
a result of cleaning of the polishing surface 10-1a using the
above-described cleaning mechanism, the slurry remaining on the
polishing surface 10-1a in the polishing step could be removed by
performing cleaning for 5 to 20 seconds.
[0175] FIG. 30 is a perspective view showing the transporting
device 514a (514b). FIGS. 31A and 31B are views showing a robot
hand 540 attached to the transporting device 514a (514b), and FIG.
31A is a plan view and FIG. 31B is a side sectional view.
[0176] The transporting device 514a (514b) is constituted by
attaching the robot hands 540, 540 to the respective front ends of
two arms 542, 542 mounted on an upper portion of a robot body 543.
The two robot hands 540, 540 are arranged so as to be placed
vertically one above the other via a predetermined gap. The arms
542 expand and contract to enable a substrate W placed on the robot
hand 540 to be transported in a before and after direction. Also,
the robot body 543 rotates and/or moves to permit transportation of
the substrate W in an arbitrary direction.
[0177] As shown in FIGS. 31A and 31B, four film thickness sensors S
are directly attached, in a buried state, to the robot hand 540.
Any film thickness sensor S may be used, if it can measure the film
thickness. Preferably, an eddy current sensor is used. The eddy
current sensor generates eddy currents, and detects the frequencies
or losses of electric currents which have passed through the
substrate W and returned, thereby measuring the film thickness. The
eddy current sensor is used in a non-contact manner. An optical
sensor is also preferred as the film thickness sensor S. The
optical sensor irradiates a sample with light, and can directly
measure film thickness based on information on reflected light. The
optical sensor is capable of measuring film thickness of not only a
metal film, but also an insulating film such as an oxide film. The
positions of installation of the film thickness sensors S are not
limited to the illustrated positions, and the film thickness sensor
S is attached in an arbitrary number at a location where
measurement is to be made. The robot hand 540 is available as a dry
hand handling a dry substrate W, or as a wet hand handling a wet
substrate W. The film thickness sensor S can be attached to either
hand. When the transporting device 514a (514b) is used in a plating
section, however, there is need to measure the film thickness of
the substrate W in such a state that only the seed layer is
initially provided. Thus, it is necessary to measure the film
thickness of the substrate W, initially in a dry state, which is
placed in the substrate cassettes 510, 510 (see FIG. 27). Hence, it
is desirable to attach the film thickness sensor S to the dry
hand.
[0178] Signals detected by the film thickness sensors S are sent to
an arithmetic unit where an arithmetic operation, such as
calculation of a difference between the film thickness of the
substrate W before treatment and the film thickness of the
substrate W after treatment, is performed and the film thickness is
outputted onto a predetermined display or the like. Any arithmetic
method may be used, if it can measure the film thickness
appropriately.
[0179] According to the present embodiment, since the film
thickness can be measured while the robot hand 540 is transporting
the substrate W, there is no need to provide a film thickness
measuring step separately during the substrate treatment process,
and the throughput is not decreased. Since the film thickness
sensors S are attached to the robot hand 540, a space saving can be
actualized.
[0180] FIGS. 32A and 32B are views showing another embodiment of
the transporting devices 514a (514b). FIG. 32A is a schematic plan
view, while FIG. 32B is a schematic side view. As shown in FIGS.
32A and 32B, according to this embodiment, five film thickness
sensors S are attached to the robot body 543, and positioned below
the robot hand 540. That is, a disk-shaped mounting plate 545 of
substantially the same size as the substrate W is located below the
robot hand 540, and the five film thickness sensors S are attached
onto the mounting plate 545. The mounting plate 545 is fixed to the
robot body 543, but may be fixed to other members.
[0181] Each of the film thickness sensors S is attached at position
where the film thickness sensor S do not overlap with the robot
hand 540 as illustrated, whereby the film thickness can be measured
in a wide area of the entire substrate W. The present embodiment
can also achieve a space saving, and can perform measurement in a
very short time. By stopping the substrate W above the mounting
plate 545, measurement of the film thickness at fixed points of the
substrate W can be made. If the substrate W on the robot hand 540
is caused to pass over the mounting plate 545 without stopping,
measurement during scanning becomes possible. Since the film
thickness sensors S are integral with the robot body 543, stable
detection can be performed. If the mounting plate 545 is fixed to
other members in place of the robot body 543, it becomes possible
to adjust the distance between the substrate W and the sensors by
arbitrarily varying the height of the robot hand.
[0182] The construction in which signals after detection are sent
to the arithmetic unit to measure the film thickness is the same as
in the embodiment shown in FIGS. 31A and 31B. However, in the case
of measurement simultaneous with scanning, the points of
measurement change with the passage of time, so that it is
preferred to perform computations by the method of moving averages
and calculate the film thickness.
[0183] FIGS. 33A and 33B are views showing another embodiment of
the film thickness measurement. FIG. 33A is a schematic plan view,
and FIG. 33B is a schematic side view. In the embodiment shown in
FIGS. 33A and 33B, three film thickness sensors S are provided on
an upper portion of an exit and entrance portion 550 of the plating
section 512 shown in FIG. 27. That is, a rectangular mounting plate
551 is disposed above the exit and entrance portion 550, and the
three film thickness sensors S are attached in series to a lower
surface of the mounting plate 551. The mounting plate 551 may be
fixed to the plating section 512, or may be fixed to the robot body
543 of the transporting device 514a (514b), or may be fixed to
other members.
[0184] According to such a constitution, the film thickness sensors
S scan the substrate W when the substrate W is carried into and
withdrawn from the plating section 512. This is suitable for scan
measurement. By providing in series of the film thickness sensors S
as in this embodiment, arbitrary points on the substrate W can be
measured by scanning. By arbitrarily varying the height of the
robot hand, it becomes possible to adjust the distance between the
substrate W and the sensors.
[0185] Signals detected by the film thickness sensors S are
computed by an arithmetic unit. In the case of scan measurement, it
is desirable to perform computation by the method of moving
averages.
[0186] The film thickness sensors S may be disposed near the exit
and entrance, where the substrate W is introduced and withdrawn, of
the polishing unit 541 shown in FIG. 27. When the substrate W is
carried into the polishing unit 541, the surface, to be treated, of
the substrate W faces downward. Thus, it is preferred to dispose
the film thickness sensors S on a lower side of the location of the
polishing unit 541 where the substrate W is carried in (of course,
even when the film thickness sensors S are installed on the upper
side of such location, measurement of the film thickness is
possible, but installation on the lower side results in a higher
accuracy). After polishing is completed, the treated surface of the
substrate W is in a wet state. The use of film thickness sensors
capable of measurement even in a wet condition makes it possible to
measure the film thickness by the same method as in the plating
section 512.
[0187] FIG. 34 is a schematic front view of a reversing machine 539
and its surroundings. FIG. 35 is a plan view of reversing arm 553,
553 portions. As shown in FIGS. 34 and 35, the reversing arms 553,
553 put a substrate W therebetween and hold its outer periphery
from right and left sides, and rotate the substrate W through
180.degree., thereby turning the substrate over. A circular
mounting base 555 is provided immediately below the reversing arms
553, 553, and a plurality of film thickness sensors S are provided
on the mounting base 555. The mounting base 555 is adapted to be
movable upward and downward by a drive mechanism 557.
[0188] During reversing of the substrate W, the mounting base 555
waits at a position, indicated by solid lines, below the substrate
W. Before or after reversing, the mounting base 555 is raised to a
position indicated by dotted lines to bring the film thickness
sensors S close to the substrate W gripped by the reversing arms
553, 553, thereby measuring the film thickness.
[0189] According to the present embodiment, since there is no
restriction such as the arms 542 of the transporting device 514a
(514b), shown in FIG. 30, the film thickness sensors S can be
installed at arbitrary positions on the mounting base 555. Further,
the mounting base 555 is adapted to be movable upward and downward,
so that the distance between the substrate W and the sensors can be
adjusted at the time of measurement. It is also possible to mount
plural types of sensors suitable for the purpose of detection, and
change the distance between the substrate W and the sensors each
time measurements are made by the respective sensors. However, the
mounting base 555 moves upward and downward, thus requiring certain
measuring time.
[0190] FIG. 36 is a plan view of yet another embodiment of plating
apparatus in accordance with the present invention. The plating
apparatus comprises a loading/unloading section 915, each pair of
annealing sections 986, bevel-etching/chemical cleaning sections
984 and substrate stages 978, a washing section 982 provided with a
mechanism for reversing substrate through 180.degree., a first
plating section 980 for performing a first-stage plating
(reinforcement of seed layer) as shown in FIG. 19, and three second
plating sections 972 for performing a second-stage plating (filling
with copper) as shown in FIG. 19. The apparatus is also provided
with a moveable first transporting device 917 for transporting a
substrate between the loading/unloading section 915, the annealing
sections 986, the bevel-etching/chemical cleaning sections 984 and
the substrate stages 978, and a movable second transporting device
924 for transporting the substrate between the substrate stages
978, the washing section 982, the first plating section 980 and the
second plating sections 972.
[0191] According to this embodiment, the substrate W having a seed
layer 7 (see FIG. 39A) as an outer layer is first taken one by one
from the loading/unloading section 915 by the first transporting
device 917, and is transported, via the substrate stage 978, to the
first plating section 980.
[0192] Next, the first-stage plating of the surface of the
substrate is performed in the first plating section 980, using a
first plating liquid, thereby reinforcing and completing the thin
portion of the seed layer 7. The first plating liquid used in the
first plating section, e.g. a plating liquid comprising copper
pyrophosphate as a base, and an complexing agent such as
pyrophosphoric acid, has a higher polarization than a usual copper
sulfate plating liquid, described above.
[0193] After the completion of the first-stage plating, the
substrate W is, according to necessity, transported to the washing
section 982 for washing by water, and is then transported to one of
the second plating sections 972.
[0194] Next, the second-stage plating is performed onto the surface
of the substrate W in the second plating section 972 using a second
plating liquid, thereby filling with copper. Since the seed layer 7
(see FIG. 39A and FIG. 40A) has been reinforced by the first-stage
plating to become a complete layer without a thin portion, electric
current flows evenly through the seed layer 7 in the second-stage
plating, whereby filling with copper can be completed without the
formation of any voids. The second plating liquid, e.g. having a
composition of low sulfuric acid concentration, has an excellent
leveling property, described above.
[0195] After the completion of the second-stage plating, the
substrate W is, according to necessity, transported to the washing
section 982 for washing by water. Thereafter, the substrate W is
transported to the bevel-etching/chemical cleaning section 984
where the substrate W is cleaned by using a chemical liquid, and a
thin copper film, etc. formed on the bevel portion of the substrate
W is etched away, and the substrate W is further rinsed by water
and is then rotated at a high speed for spin-drying. The substrate
is then transported to the annealing section 986 for annealing.
Thereafter, the substrate is returned to cassette of the
loading/unloading section 915 by the first transporting device
917.
[0196] FIG. 37 is a plan view of yet another embodiment of a
plating apparatus in accordance with the present invention. The
plating apparatus comprises loading/unloading sections 800 and a
treatment section 802. Taking into consideration the throughput of
semiconductor wafers, etc. a transporting device 804 is disposed in
the center of the treatment section 802, and around the
transporting device 804 are disposed a plurality of plating
sections 806 and a plurality of cleaning/drying section
(spinning-rinsing-drying unit) 808. In this embodiment, three
plating sections 806 and three cleaning/drying sections 808 are
disposed around one transporting device 804. Instead of the
cleaning/drying sections 806, bevel-etching/chemical cleaning
sections may be disposed. The plating section 808 may either be of
the face-up type or of the face-down type.
[0197] FIG. 38 is a plan view of yet another example of a plating
apparatus in accordance with the present invention. The plating
apparatus comprises a loading station 820 and a main frame 832. The
loading station 820 includes two cassette tables for placing
thereon substrate cassettes 822 that accommodate substrates such as
semiconductor wafers, and annealing sections 830. The main frame
832 includes a pair of cleaning/drying sections 834, a pair of
first plating sections 836 for performing the above described
first-stage plating, and two pairs of second plating sections 838
for performing the above described second-stage plating.
[0198] Further, a first transporting device 840 is disposed in the
loading station 820 for transporting the substrate between the
substrate cassettes 822, the annealing sections 830 and the
cleaning/drying sections 834; and a second transporting device 842
is disposed in the main frame 832 for transporting the substrate
between cleaning/drying sections 834, the first plating sections
836 and the second plating sections 838.
[0199] FIG. 41 is a plan view of yet another embodiment of plating
apparatus in accordance with the present invention. The plating
apparatus comprises loading/unloading sections 900, annealing
section 903, two bevel-etching/chemical cleaning sections 902,
substrate stage 906 and three plating sections 901. The apparatus
is also provided with a first transporting device 904 for
transporting a substrate between the loading/unloading sections 900
and the substrate stage 906, and a movable second transporting
device 905 for transporting the substrate between the substrate
stages 906, the annealing section 903, the bevel-etching/chemical
cleaning sections 902 and the plating sections 901.
[0200] FIG. 42 is a plan view of yet another embodiment of plating
apparatus in accordance with the present invention. The plating
apparatus comprises loading/unloading sections 1000,
bevel-etching/chemical cleaning section 1050, cleaning/drying
section (spinning-rinsing-drying unit) 1040, first plating section
1010 for performing a first-stage plating (reinforcement of seed
layer) as shown in FIG. 19, three second plating sections 1020 for
performing a second-stage plating (filling with copper) as shown in
FIG. 19, and washing section 1030 for washing the substrate between
first-stage plating and second-stage plating. The apparatus is also
provided with a first transporting device 1060 for transporting a
substrate between the loading/unloading sections 1000, the
bevel-etching/chemical cleaning section 1050 and the
cleaning/drying section 1040, and a second transporting device 924
for transporting the substrate between the bevel-etching/chemical
cleaning section 1050, the cleaning/drying section 1040, the first
plating section 1010 and the second plating sections 1020.
[0201] Each of the plating sections 901 shown in FIG. 41 and the
plating sections 1010 and 1020 shown in FIG. 42 may be used as the
first-stage plating section or the second-stage plating section by
using the first plating liquid or the second plating liquid
described above for desire.
[0202] Although certain preferred embodiments of the present
invention have been shown and described in detail, it should be
understood that various changes and modifications may be made
therein without departing from the scope of the appended
claims.
* * * * *