U.S. patent application number 10/416304 was filed with the patent office on 2004-01-22 for method of copper plating small diameter hole.
Invention is credited to Nakamura, Kenji.
Application Number | 20040011654 10/416304 |
Document ID | / |
Family ID | 19135677 |
Filed Date | 2004-01-22 |
United States Patent
Application |
20040011654 |
Kind Code |
A1 |
Nakamura, Kenji |
January 22, 2004 |
Method of copper plating small diameter hole
Abstract
A method of copper plating a small diameter hole which uses a
copper sulfate plating solution containing copper sulfate, sulfuric
acid, chlorine ions, a sulfur compound, and a surfactant to copper
plate the inside of a small diameter hole of an object being plated
having a small diameter hole by the PPR method, comprising
performing reverse electrolysis by a range of current density of
0.1 to 1 A/dm.sup.2 to peel off a sulfur compound near the opening
of the small diameter hole in the sulfur compound adsorbed to the
object being plated so as to keep the polarization resistance in
the small diameter hole at the time of regular electrolysis lower
than that near the opening of the small diameter hole and form a
copper plating film of a uniform thickness inside the small
diameter hole. Since a high precision, large capacity pulse power
supply is not required, the capital costs can be reduced and the
inside of the small diameter hole can be plated well.
Inventors: |
Nakamura, Kenji;
(Nagano-shi, JP) |
Correspondence
Address: |
STAAS & HALSEY LLP
SUITE 700
1201 NEW YORK AVENUE, N.W.
WASHINGTON
DC
20005
US
|
Family ID: |
19135677 |
Appl. No.: |
10/416304 |
Filed: |
May 9, 2003 |
PCT Filed: |
October 9, 2002 |
PCT NO: |
PCT/JP02/10483 |
Current U.S.
Class: |
205/118 ;
205/291 |
Current CPC
Class: |
C25D 5/605 20200801;
H05K 2203/1476 20130101; C25D 5/02 20130101; H05K 3/423 20130101;
C25D 5/18 20130101; C25D 3/38 20130101 |
Class at
Publication: |
205/118 ;
205/291 |
International
Class: |
C25D 005/02 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 16, 2001 |
JP |
2001-317878 |
Claims
4. (AS ONCE AMENDED HEREIN) A method of copper plating a small
diameter hole as set forth in claim 1, characterized by performing
the regular electrolysis in a range of current density of 1 to 2
A/dm.sup.2.
5. (AS ONCE AMENDED HEREIN) A method of copper plating a small
diameter hole as set forth in claim 1, characterized by using a low
electrical resistance, high copper concentration copper sulfate
plating solution set to a sulfuric acid concentration of 150 to 250
g/l and a concentration of copper sulfate of 130 to 200 g/l.
6. (AS ONCE AMENDED HEREIN) A method of copper plating a small
diameter hole as set forth in claim 1, characterized by burying the
inside of the small diameter hole by copper plating.
7. (AS NEW HEREIN) A method of copper plating a small diameter hole
as set forth in claim 2, characterized by performing the regular
electrolysis in several tens to several hundreds of seconds and
performing the reverse electrolysis in several seconds to several
tens of seconds.
8. (AS NEW HEREIN) A method of copper plating a small diameter hole
as set forth in claim 2, characterized by performing the regular
electrolysis in a range of current density of 1 to 2
A/dm.sup.2.
9. (AS NEW HEREIN) A method of copper plating a small diameter hole
as set forth in claim 3, characterized by performing the regular
electrolysis in a range of current density of 1 to 2
A/dm.sup.2.
10. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 2, characterized by using a low
electrical resistance, high copper concentration copper sulfate
plating solution set to a sulfuric acid concentration of 150 to 250
g/l and a concentration of copper sulfate of 130 to 200 g/l.
11. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 3, characterized by using a low
electrical resistance, high copper concentration copper sulfate
plating solution set to a sulfuric acid concentration of 150 to 250
g/l and a concentration of copper sulfate of 130 to 200 g/l.
12. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 4, characterized by using a low
electrical resistance, high copper concentration copper sulfate
plating solution set to a sulfuric acid concentration of 150 to 250
g/l and a concentration of copper sulfate of 130 to 200 g/l.
13. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 2, characterized by burying the inside
of the small diameter hole by copper plating.
14. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 3, characterized by burying the inside
of the small diameter hole by copper plating.
15. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 4, characterized by burying the inside
of the small diameter hole by copper plating.
16. (AS NEW HEREIN) A method of copper plating a small diameter
hole as set forth in claim 5, characterized by burying the inside
of the small diameter hole by copper plating. REMARKS The foregoing
amendment to the specification is submitted to correct a
typographical error. The claim amendments are set forth to delete
the multiple dependencies of the original claims. No new matter is
presented.
1. A method of copper plating a small diameter hole which uses a
copper sulfate plating solution containing copper sulfate, sulfuric
acid, chlorine ions, a sulfur compound, and a surfactant to copper
plate the inside of a small diameter hole of an object being plated
having a small diameter hole by the PPR method, said method of
copper plating a small diameter hole characterized by performing
reverse electrolysis by a range of current density of 0.1 1
A/dm.sup.2 to peel off a sulfur compound near the opening of the
small diameter hole in the sulfur compound adsorbed to the object
being plated so as to keep the polarization resistance in the small
diameter hole at the time of regular electrolysis lower than that
near the opening of the small diameter hole and form a copper
plating film of a uniform thickness inside the small diameter
hole.
2. A method of copper plating a small diameter hole as set forth in
claim 1, characterized by, at the time of said reverse
electrolysis, performing two-stage reverse electrolysis consisting
of performing the first half reverse electrolysis by a high current
density and the second half reverse electrolysis by a current
density lower than the first half.
3. A method of copper plating a small diameter hole as set forth in
claim 1 or 2, characterized by performing the regular electrolysis
in several tens to several hundreds of seconds and performing the
reverse electrolysis in several seconds to several tens of
seconds.
4. A method of copper plating a small diameter hole as set forth in
claim 1, 2, or 3, characterized by performing the regular
electrolysis in a range of current density of 1 to 2
A/dm.sup.2.
5. A method of copper plating a small diameter hole as set forth in
claim 1, 2, 3, or 4, characterized by using a low electrical
resistance, high copper concentration copper sulfate plating
solution set to a sulfuric acid concentration of 150 to 250 g/l and
a concentration of copper sulfate of 130 to 200 g/l.
6. A method of copper plating a small diameter hole as set forth in
any one of claims 1 to 5, characterized by burying the inside of
the small diameter hole by copper plating.
Description
TECHNICAL FIELD
[0001] the present invention relates to a method of copper plating
a small diameter hole.
BACKGROUND ART
[0002] Along with the higher densities of interconnects of
electronic components, the through holes and blind vias of circuit
boards have become smaller in diameter and reliable formation of
plating films in them has become difficult. That is, with the
ordinary plating methods, the plating films at the center parts of
the through holes or the bottoms of the vias become extremely thin,
so there is a problem of reliability. Further, if making the films
at the insides thicker by plating for a long time, the cost
increases, the openings become blocked, or other new inconveniences
arise.
[0003] To solve these problems, the PPR (Periodic Pulse Reverse)
plating method for reversing the electrolysis polarity periodically
(for example, Japanese Unexamined Patent Pulication (Kokai) No.
2000-68651) and a method using special agitation have been
proposed.
[0004] With the conventional PPR plating method, however, pulses of
a millisecond (ms) unit are used, so there are the following
problems:
[0005] That is, a high performance, expensive pulse power supply
able to continuously switch polarities at a high speed is
required.
[0006] Further, it is necessary to synchronize two power supplies
for plating patterns on the front and back of the substrate, but
since the pulses are high in speed, synchronization is extremely
difficult.
[0007] Further, the reverse electrolysis current density required
is about 1 to 5 times the regular electrolysis current density, so
a large capacity power supply is required.
[0008] Further, since the pulses are high in speed (high
frequency), it is necessary to lay the interconnects considering
the loss due to the inductance of the interconnects.
[0009] Further, in the case of rack plating where the object being
plated (substrate) is suspended in a plating solution, the effect
of the pulse does not reach the center of the substrate, making
this impractical.
[0010] Further, there are various other issues such as the fact
that setting the various types of plating conditions is not
easy.
[0011] Further, in the case of using a special agitation apparatus,
there are the issues that it is difficult to uniformly agitate the
solution for all parts and the cost rises.
DISCLOSURE OF THE INVENTION
[0012] Therefore, an object of the present invention is to provide
a method of copper plating a small diameter hole not requiring a
high precision, large capacity pulse power supply and therefore
achieving a reduction in the capital cost and enabling the inside
of the small diameter hole to be plated well.
[0013] To achieve the above object, the method of copper plating a
small diameter hole according to the present invention is a method
of copper plating a small diameter hole which uses a copper sulfate
plating solution containing copper sulfate, sulfuric acid, chlorine
ions, a sulfur compound, and a surfactant to copper plate the
inside of a small diameter hole of an object being plated having a
small diameter hole by the PPR method, characterized by performing
reverse electrolysis by a range of current density of 0.1 to 1
A/dm.sup.2 to peel off a sulfur compound near the opening of the
small diameter hole in the sulfur compound adsorbed to the object
being plated so as to keep the polarization resistance in the small
diameter hole at the time of regular electrolysis lower than that
near the opening of the small diameter hole and form a copper
plating film of a uniform thickness inside the small diameter
hole.
[0014] The method further preferably comprises, at the time of said
reverse electrolysis, performing two-stage reverse electrolysis
consisting of performing a first half of reverse electrolysis by a
high current density and performing a second half of reverse
electrolysis by a current density lower than the first half.
[0015] Further, the method performs the regular electrolysis in
several tens to several hundreds of seconds and performs the
reverse electrolysis in several seconds to several tens of
seconds.
[0016] Further, the method preferably performs the regular
electrolysis in a range of current density of 1 to 2
A/dm.sup.2.
[0017] It is preferable to use a low electrical resistance, high
copper concentration copper sulfate plating solution set to a
sulfuric acid concentration of 150 to 250 g/l and a concentration
of copper sulfate of 130 to 200 g/l. Further, a copper sulfate
plating solution set to a sulfuric acid concentration of around 200
g/l and a concentration of copper sulfate of around 150 g/l is
preferable in terms of safety.
[0018] Further, it is possible to bury the inside of the small
diameter hole by copper plating.
BRIEF DESCRIPTION OF DRAWINGS
[0019] FIG. 1 is a graph of the relationship between the sulfuric
acid concentration and the resistance of a plating solution.
[0020] FIG. 2 is a graph of the relationship between the sulfuric
acid concentration and the saturation copper sulfate
concentration.
[0021] FIG. 3 is a graph of the relationship between the reverse
electrolysis potential and the magnitude of the polarization
resistance at the time of regular electrolysis.
[0022] FIG. 4 is a schematic view of a current waveform in an
embodiment of the present invention.
[0023] FIG. 5 is a sectional photograph of a through hole of
Example 1.
[0024] FIG. 6 is a sectional photograph of a through hole of
Example 2.
[0025] FIG. 7 is a sectional photograph of a through hole of
Example 3.
[0026] FIG. 8 is a sectional photograph of a through hole of
Example 4.
[0027] FIG. 9 is a sectional photograph of a through hole of
Comparative Example 1.
[0028] FIG. 10 is a sectional photograph of a through hole of
Comparative Example 2.
BEST MODE FOR CARRYING OUT THE INVENTION
[0029] Next, a preferred embodiment of the present invention will
be explained in detail based on the attached drawings.
[0030] First, the copper sulfate plating solution will be
explained.
[0031] The copper sulfate plating solution is comprised of copper
sulfate as a copper source, sulfuric acid for adjusting the
conductivity, chlorine ions (chloride) and a surfactant as
suppressants, and a sulfur compound functioning as a plating
accelerator.
[0032] To improve the throwing power of the plating in the small
diameter hole, it is preferable to make the solution high in copper
concentration. Further, to reduce the electrical resistance of the
plating solution, the greater the amount of the sulfuric acid, the
better. However, if the amount of the sulfuric acid becomes
greater, the copper sulfate becomes hard to dissolve. If in excess,
the copper sulfate will end up precipitating. Therefore, a balance
between the two is required.
[0033] FIG. 1 is a graph of the relationship between the sulfuric
acid concentration and copper sulfate concentration and the
resistance of a plating solution and compares the case of an
electrical resistance of 5% sulfuric acid as "1". Further, FIG. 2
is a graph of the relationship between the sulfuric acid
concentration and the saturation copper sulfate concentration.
[0034] As clear from FIG. 1, with a sulfuric acid concentration of
150 g/l or more, the electrical resistance is low and substantially
stable. Therefore, to obtain a plating solution with a low
electrical resistance, it is preferable to make the sulfuric acid
concentration 150 g/l or more. Further, to make a plating with a
high copper concentration, it is preferable to make the sulfuric
acid concentration 250 g/l or less.
[0035] Further, the region below the line of FIG. 2 is the region
where the solution can be used as a copper plating solution. In the
range of the above sulfuric acid concentration (150 to 250 g/l),
dissolution is possible in the range of copper sulfate
concentration of about 130 to 200 g/l.
[0036] In the above range, to obtain a plating solution able to be
used stably while maintaining a high copper concentration, it is
optimal to adjust the sulfuric acid concentration to around 200 g/l
and the concentration of copper sulfate to around 150 g/l.
[0037] Note that the above "around" means.+-.5%.
[0038] As a chlorine ion source, hydrochloric acid, sodium
chloride, potassium chloride, ammonium chloride, etc. may be
mentioned. These may be used alone or in combination. The amount
added is, as chlorine ions, one in the range of 10 to 200 mg/l, but
around 35 mg/l is preferable.
[0039] The sulfur compound is not particularly limited, but sodium
3-mercapto-1-propane sulfonate or sodium 2-mercaptoethane
sulfonate, bis-(3-sulfopropyl)-disulfide disodium, or another
sulfur compound may be preferably used alone or in combination.
[0040] The amounts added of these sulfur compounds are effectively
slight amounts of addition of around 1 mg/l.
[0041] The surfactant is also not particularly limited, but
polyethylene glycol, polypropylene glycol, or another surfactant
may be used alone or in combination.
[0042] The amount added of the surfactant used may be in the range
of around several mg/l to 10 g/l.
[0043] The surfactant is present together with the chlorine ions,
so increases the polarization resistance at the cathode.
[0044] On the other hand, the sulfur compound reduces the
polarization resistance at the cathode and acts as an
accelerator.
[0045] When the copper sulfate plating solution contains a
surfactant, chlorine ions, and a sulfur compound, the polarization
resistance at the cathode surface depends on the balance of the
amounts of adsorption of these additives. In particular, the sulfur
compound is adsorbed at the surface of the object being plated and
has a strong effect of reducing the polarization resistance at the
adsorbing surface. Therefore, suppression of the amount of
adsorption of the sulfur compound leads to control of the
polarization resistance.
[0046] In the present invention, at the time of regular
electrolysis, the polarization resistance at the surface of the
object being plated (circuit board etc.) or the opening side of the
small diameter hole is controlled to be high and the polarization
resistance inside the small diameter hole to be low so as to form
overall a plating film with a uniform thickness.
[0047] Therefore, reverse electrolysis is performed to peel off the
sulfur compound adsorbed at the front surface of the object being
plated or near the opening of the small diameter hole. By this, at
the time of regular electrolysis, a difference is given to the
polarization resistance as explained above.
[0048] The electrical resistance of a plating system is defined as
the sum of the polarization resistance and the electrical
resistance of the plating solution.
[0049] Therefore, if making the electrical resistance of the
plating solution sufficiently small with respect to the
polarization resistance, the electrical resistance of the plating
system and therefore the current inversely proportional to the same
will greatly depend on the magnitude of the polarization
resistance. As explained above, the sulfuric acid concentration in
the copper plating solution is made high and the electrical
resistance of the plating solution is kept low so as to facilitate
control of the polarization resistance.
[0050] The polarization resistance Rc was defined as:
Rc=.vertline.V.sub.SCE-V.sub.0.vertline./I (V.sub.0 is an
equilibrium potential)
[0051] and the polarization resistance was measured from the
potential and the current.
[0052] FIG. 3 is a graph obtained by measuring the magnitudes of
the polarization resistances when performing reverse electrolysis
on a circuit board by various potentials for 10 sec, then
performing regular electrolysis. Note that the polarization
resistance shows the polarization resistance at the front surface
of the object being plated (circuit board). The polarization
resistance inside a small diameter hole is naturally lower than the
polarization resistance at the surface.
[0053] As shown in FIG. 3, in the range of an electrolysis
potential at the time of reverse electrolysis of 0.10 to 0.16V (vs
SCE), the polarization resistance at the time of regular
electrolysis changes. It is therefore learned that it is possible
to control the polarization resistance at the time of regular
electrolysis by the electrolysis potential at the time of reverse
electrolysis. The higher the electrolysis potential, the higher the
polarization resistance. That is, the higher the electrode
potential, the more peeling of the sulfur compound occurs and the
higher the polarization resistance at the time of regular
electrolysis.
[0054] Further, it deserves special mention that when setting the
time for the reverse electrolysis to a long time of 10 sec, a range
of potential enabling control of the polarization resistance at the
time of regular electrolysis was obtained. This suggests that long
period PPR plating can be performed.
[0055] The experiments showed that the time for reverse
electrolysis is sufficiently one in the range of 1 sec to several
tens of sec.
[0056] Note that if controlling the reverse electrolysis by the
potential, the current density might run wild, so control by the
current density is preferable. The current density for dealing with
the above potential is 0.1A to 1/dm.sup.2.
[0057] Further, in the case of a current density larger than 0.5
A/dm.sup.2, the surface of the object being plated becomes rough,
so it is preferable to control the process by a current density in
the range of 0.1 to 0.5 A/dm.sup.2. However, in the case of an
object being plated where roughness would not be that much of a
problem, control by the above current density would also be
possible.
[0058] In this way, it is possible to control the extent of peeling
of the sulfur compound by the current density at the time of
reverse electrolysis and as a result it is possible to control the
polarization resistance at the time of regular electrolysis.
[0059] The magnitude of the polarization resistance cannot be
measured inside a small diameter hole of an object being plated,
but since reverse electrolysis has almost no effect inside a small
diameter hole, it may be considered that there is almost no peeling
of the sulfur compound inside the small diameter hole other than
near the opening. Therefore, the polarization resistance at the
time of regular electrolysis inside a small diameter hole is
maintained low as it is, current flows into the small diameter
hole, and the throwing power is improved even inside the small
diameter hole. The setting of the current density at the time of
reverse electrolysis, the reverse electrolysis time, the current
density at the time of regular electrolysis, and the setting of the
electrolysis time may be performed, while measuring the thickness,
in accordance with the object being plated.
[0060] FIG. 4 schematically shows the current waveform of PPR
plating in this embodiment.
[0061] The optimal current density at the time of reverse
electrolysis is 0.1 to 0.5 A/dm.sup.2, while the optimal
electrolysis time is around 1 to 10 seconds.
[0062] Further, experiments have shown that if performing two-stage
reverse electrolysis at the time of reverse electrolysis consisting
of performing the first half reverse electrolysis by a high current
density and performing the second half reverse electrolysis by a
current density lower than the first half, a better effect is
obtained.
[0063] The improvement in the effects by performing the reverse
electrolysis in two stages is believed to be due to the following
reason: That is, in the first half (first stage) reverse
electrolysis, the peeling action at the outside of a through hole
is strong and the peeling action at the inside of the through hole
is weak. In the second half (second stage) reverse electrolysis,
the potential for the peeling is extremely weak, so the outside of
the through hole is just slightly peeled, while the inside is not
subject to almost any peeling action and rather adsorption of the
sulfur compound proceeds.
[0064] Therefore, in the first stage reverse electrolysis, the
surface compound at the outside of the through hole is reliably
peeled, while in the second stage reverse electrolysis, the sulfur
compound is adsorbed at the inside of the through hole while the
peeled state of the outside of the through hole is maintained due
to the weak peeling action. As a result, compared with performing
the reverse electrolysis in one stage, the difference in adsorption
and concentration of the sulfur compound at the outside and inside
of the through hole becomes greater and a larger difference in
polarization resistance occurs.
[0065] Further, with only one stage of reverse electrolysis,
depending on the shape of the through hole, sometimes the inside of
the through hole will end up being overly peeled and a sufficient
difference in polarization resistance between the outside and
inside of the through hole will not be able to be obtained. In such
a case as well, it is possible to reliably obtain a difference in
polarization resistance by performing a second stage of weak
reverse electrolysis.
[0066] The current density at the time of regular electrolysis
should be around 1.5 A/dm.sup.2 (not particularly limited to this.
May be decided viewing the throwing power of the plating) and the
electrolysis time around 50 to 200 sec.
EXAMPLES
[0067] The copper sulfate plating solution used was one of the
following composition in all cases:
1 Copper sulfate 5-hydrate 150 g/l Sulfuric acid 200 g/l
Polyethylene glycol 4000 3 g/l SPS 1 mg/l Chlorine ions 35 mg/l
Note that "SPS"means bis-(3-sulfopropyl)-disulfide disodium.
Example 1
[0068] A circuit board of a thickness of 0.8 mm having through
holes of opening diameters of 0.1 mm was plated by the PPR method
under the following conditions:
[0069] Regular electrolysis: Current density: 1.5 A/dm.sup.2,
electrolysis time: 120 sec
[0070] Reverse electrolysis: Current density: 0.5 A/dm.sup.2,
electrolysis time: 10 sec
[0071] Plating time: 76 min
[0072] As a result, the thickness ratio: (thickness of center part
of through hole/thickness of surface of substrate).times.100 was
91.3%.
Example 2
[0073] A circuit board of a thickness of 0.8 mm having through
holes of opening diameters of 0.15 mm was plated by the PPR method
under the following conditions:
[0074] Regular electrolysis: Current density: 1.5 A/dm.sup.2,
electrolysis time: 120 sec
[0075] Reverse electrolysis: Current density: 0.5 A/dm.sup.2,
electrolysis time: 10 sec
[0076] Plating time: 76 min
[0077] As a result, the thickness ratio was 101.4%.
Example 3
[0078] A circuit board of a thickness of 0.8 mm having through
holes of opening diameters of 0.1 mm was plated by the PPR method
under the following conditions:
[0079] Regular electrolysis: Current density: 1.5 A/dm.sup.2,
electrolysis time: 120 sec
[0080] Reverse electrolysis 1: Current density: 0.5 A/dm.sup.2,
electrolysis time: 5 sec
[0081] Reverse electrolysis 2: Current density: 0.1 A/dm.sup.2,
electrolysis time: 5 sec
[0082] Plating time: 76 min
[0083] As a result, the thickness ratio was 109.8%.
Example 4
[0084] A circuit board of a thickness of 0.8 mm having through
holes of opening diameters of 0.15 mm was plated by the PPR method
under the following conditions:
[0085] Regular electrolysis: Current density: 1.5 A/dm.sup.2,
electrolysis time: 120 sec
[0086] Reverse electrolysis 1: Current density: 0.5 A/dm.sup.2,
electrolysis time: 5 sec
[0087] Reverse electrolysis 2: Current density: 0.1 A/dm.sup.2,
electrolysis time: 5 sec
[0088] Plating time: 76 min
[0089] As a result, the thickness ratio was 110.8%.
Comparative Example 1
[0090] The above copper sulfate plating solution was used to plate
by the DC method a circuit board of a thickness of 0.8 mm having
through holes of opening diameters of 0.1 mm under the following
conditions:
[0091] Current density: 1.35 A/dm.sup.2
[0092] Plating time: 76 min
[0093] As a result, the thickness ratio was 53.9%.
Comparative Example 2
[0094] The above copper sulfate plating solution was used to plate
by the DC method a circuit board of a thickness of 0.8 mm having
through holes of opening diameters of 0.15 mm under the following
conditions:
[0095] Current density: 1.35 A/dm.sup.2
[0096] Plating time: 76 min
[0097] As a result, the thickness ratio was 54.8%.
[0098] FIG. 5 to FIG. 10 are sectional photographs (magnification
75.times.) of through holes. FIGS. 5, 6, 7, and 8 show through
holes of Examples 1, 2, 3, and 4, while FIGS. 9 and 10 show through
holes of Comparative Examples 1 and 2.
[0099] As explained above, in Examples 1 to 4, the thickness ratio
(throwing power) became substantially 100% and it was possible to
form a copper plating film of a uniform thickness on the surface
and inside the small diameter hole.
[0100] In particular, when performing the reverse electrolysis in
two stages, the result is that the plating thickness of the inside
of the small diameter hole becomes greater than the plating
thickness on the surface. In this case, if extending the plating
time, the inside of the small diameter hole can be buried by the
plating.
[0101] Further, in the above embodiment, the explanation was given
taking as an example the plating of a through hole, but the plating
can be similarly performed for plating in a micro blind via.
INDUSTRIAL APPLICABILITY
[0102] As explained above, according to the method of the present
invention, it is possible to obtain a long cycle PPR plating method
in second units and, since no high precision, large capacity pulse
current is required, possible to reduce the capital costs.
[0103] Further, it is possible to easily synchronize the current
for plating at the front and back of a substrate and laying of
interconnects considering loss due to inductance is no longer
required.
[0104] Further, it is possible to form a plating film of a
substantially uniform thickness at the surface, opening part, and
inside of a small diameter hole. several tens of seconds.
* * * * *