U.S. patent application number 10/251491 was filed with the patent office on 2004-01-01 for method of manufacturing cmos devices by the implantation of n- and p-type cluster ions.
Invention is credited to Horsky, Thomas Neil, Jacobson, Dale Conrad, Krull, Wade Allen.
Application Number | 20040002202 10/251491 |
Document ID | / |
Family ID | 30003730 |
Filed Date | 2004-01-01 |
United States Patent
Application |
20040002202 |
Kind Code |
A1 |
Horsky, Thomas Neil ; et
al. |
January 1, 2004 |
Method of manufacturing CMOS devices by the implantation of N- and
P-type cluster ions
Abstract
A method of manufacturing a semiconductor device is described,
wherein clusters of N- and P-type dopants are implanted to form the
transistor structures in CMOS devices. For example,
As.sub.4H.sub.x.sup.+ clusters and either B.sub.10H.sub.x.sup.- or
B.sub.10H.sub.x.sup.+ clusters are used as sources of As and B
doping, respectively, during the implants. An ion implantation
system is described for the implantation of cluster ions into
semiconductor substrates for semiconductor device manufacturing. A
method of producing higher-order cluster ions of As, P, and B is
presented, and a novel electron-impact ion source is described
which favors the formation of cluster ions of both positive and
negative charge states. The use of cluster ion implantation, and
even more so the implantation of negative cluster ions, can
significantly reduce or eliminate wafer charging, thus increasing
device yields. A method of manufacturing a semiconductor device is
further described, comprising the steps of: providing a supply of
dopant atoms or molecules into an ionization chamber, combining the
dopant atoms or molecules into clusters containing a plurality of
dopant atoms, ionizing the dopant clusters into dopant cluster
ions, extracting and accelerating the dopant cluster ions with an
electric field, selecting the desired cluster ion by mass analysis,
modifying the final implant energy of the cluster ion through
post-analysis ion optics, and implanting the dopant cluster ions
into a semiconductor substrate. In general, dopant clusters contain
n dopant atoms where n can be 2, 3, 4 or any integer number. This
method provides the advantages of increasing the dopant dose rate
to n times the implantation current with an equivalent per dopant
atom energy of 1/n times the cluster implantation energy. This is
an effective method for making shallow transistor junctions, where
it is desired to implant with a low energy per dopant atom.
Inventors: |
Horsky, Thomas Neil;
(Boxborough, MA) ; Jacobson, Dale Conrad;
(Hackettstown, NJ) ; Krull, Wade Allen;
(Marblehead, MA) |
Correspondence
Address: |
John S. Paniaguas
Katten Muchen Zavis Rosenman
525 West Monroe Street
Chicago
IL
60661-3693
US
|
Family ID: |
30003730 |
Appl. No.: |
10/251491 |
Filed: |
September 20, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10251491 |
Sep 20, 2002 |
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10244617 |
Sep 16, 2002 |
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60391847 |
Jun 26, 2002 |
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60392271 |
Jun 26, 2002 |
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Current U.S.
Class: |
438/515 ;
257/E21.336; 257/E21.473; 257/E21.634 |
Current CPC
Class: |
H01L 21/823842 20130101;
H01J 2237/31701 20130101; H01L 21/823814 20130101; H01L 21/26513
20130101; H01L 21/425 20130101; H01L 21/2658 20130101; H01L
21/26566 20130101 |
Class at
Publication: |
438/515 |
International
Class: |
H01L 021/8238; H01L
021/425 |
Claims
What is claimed and desired to be covered by a Letters Patent is as
follows:
1. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
As.sub.4+; and implanting said N-type As.sub.4+ dopant cluster ions
into a first region of said substrate resulting in N-type doping of
said substrate.
2. The method as recited in claim 1, wherein said generating step
comprises: providing a source of arsine (AsH.sub.3) gas; providing
a conduit between said source of arsine (AsH.sub.3) gas and an
ionization chamber to enable said gaseous arsine (AsH.sub.3) to
communicate with said ionization chamber; and ionizing said arsine
(AsH.sub.3) gas in said ionization chamber.
3. The method as recited in claim 2, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
4. The method as recited in claim 2, further including the step of
controlling the temperature of said ionization chamber to a
predetermined value.
5. The method as recited in claim 2, wherein said implanting step
includes the step of extracting As.sub.4+ ions from said ionization
chamber by an electric field.
6. The method as cited in claim 5, further including the step of
mass analyzing the extracted ions by selecting the As.sub.4+
ions.
7. The method as recited in claim 1, further including the step of:
generating P-type dopant cluster ions; and implanting said P-type
dopant cluster ions into said substrate into a second region
different than said first region.
8. The method as recited in claim 7, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
9. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
As.sub.3.sup.+; and implanting said N-type As.sub.3.sup.+ dopant
cluster ions into a first region of said substrate resulting in
N-type doping of said substrate.
10. The method as recited in claim 9, wherein said generating step
comprises: providing a source of arsine (AsH.sub.3) gas; providing
a conduit between said source of arsine (AsH.sub.3) gas and an
ionization chamber to enable said gaseous arsine (AsH.sub.3) to
communicate with said ionization chamber; and ionizing said arsine
(AsH.sub.3) gas in said ionization chamber.
11. The method as recited in claim 10, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
12. The method as recited in claim 10, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
13. The method as recited in claim 10, wherein said implanting step
includes the step of extracting As.sub.3.sup.+ ions from said
ionization chamber by an electric field.
14. The method as cited in claim 13, further including the step of
mass analyzing the extracted ions by selecting the As.sub.3.sup.+
ions.
15. The method as recited in claim 9, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
16. The method as recited in claim 15, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
17. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
As.sup.4H.sub.x.sup.+, where x is an integer and
1.ltoreq.x.ltoreq.6; implanting said N-type dopant cluster ions
into a first region of said substrate resulting in N-type doping of
said substrate.
18. The method as recited in claim 17, wherein said generating step
comprises: providing a source of arsine (AsH.sub.3) gas; providing
a conduit between said source of arsine (AsH.sub.3) gas and an
ionization chamber to enable said gaseous arsine (AsH.sub.3) to
communicate with said ionization chamber; and ionizing said arsine
(AsH.sub.3) gas in said ionization chamber.
19. The method as recited in claim 18, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
20. The method as recited in claim 18, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
21. The method as recited in claim 18, wherein said implanting step
includes the step of extracting said dopant cluster ions from said
ionization chamber by an electric field.
22. The method as cited in claim 21, further including the step of
mass analyzing the extracted ions by selecting said dopant cluster
ions.
23. The method as recited in claim 17, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
24. The method as recited in claim 23, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
25. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
As.sub.3 Hx+, where x is an integer and 1.ltoreq.x.ltoreq.5; and
implanting said N-type As.sub.3 Hx+, cluster ions into a first
region of said substrate resulting in N-type doping of said
substrate.
26. The method as recited in claim 25, wherein said generating step
comprises: providing a source of arsine (AsH.sub.3) gas; providing
a conduit between said source of arsine (AsH.sub.3) gas and an
ionization chamber to enable said gaseous arsine (AsH.sub.3) to
communicate with said ionization chamber; and ionizing said arsine
(AsH.sub.3) gas in said ionization chamber.
27. The method as recited in claim 26, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
28. The method as recited in claim 26, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
29. The method as recited in claim 26, wherein said implanting step
includes the step of extracting said dopant cluster ions from said
ionization chamber by an electric field.
30. The method as cited in claim 29, further including the step of
mass analyzing the extracted ions and selecting the
As.sub.3H.sub.x+ species.
31. The method as recited in claim 23, further including the step
of: generating P-type dopant cluster ions, and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
32. The method as recited in claim 31, wherein said generating step
comprises generating negative decaborane cluster ion
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
33. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
P.sub.4+; and implanting said N-type P.sub.4+ dopant cluster ions
into a first region of said substrate resulting in N-type doping of
said substrate.
34. The method as recited in claim 33, wherein said generating step
comprises: providing a source of phosphine (PH.sub.3) gas;
providing a conduit between said source of phosphine (PH.sub.3) gas
and an ionization chamber to enable said gaseous phosphine
(PH.sub.3) to communicate with said ionization chamber; and
ionizing said phosphine (PH.sub.3) gas in said ionization
chamber.
35. The method as recited in claim 34, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
36. The method as recited in claim 34, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
37. The method as recited in claim 34, wherein said implanting step
includes the step of extracting P.sub.4+ ions from said ionization
chamber by an electric field.
38. The method as cited in claim 37, further including the step of
mass analyzing the extracted ions by selecting the P.sub.4+
species.
39. The method as recited in claim 33, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
40. The method as recited in claim 39, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
41. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
P.sub.3+; and implanting said N-type P.sub.3+ dopant cluster ions
into a first region of said substrate resulting in N-type doping of
said substrate.
42. The method as recited in claim 41, wherein said generating step
comprises: providing a source of phosphine (PH.sub.3) gas;
providing a conduit between said source of phospine (PH.sub.3) gas
and an ionization chamber to enable said gaseous phosphine
(PH.sub.3) to communicate with said ionization chamber; and
ionizing said phosphine (PH.sub.3) gas in said ionization
chamber.
43. The method as recited in claim 42, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
44. The method as recited in claim 47, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
45. The method as recited in claim 42, wherein said implanting step
includes the step of extracting P.sub.3+ ions from said ionization
chamber.
46. The method as cited in claim 50, further including the step of
mass analyzing the extracted ions by selecting the P.sub.3+
species.
47. The method as recited in claim 42 further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
48. The method as recited in claim 47, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
49. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type dopant cluster ions
P.sub.2+; and implanting said N-type P.sub.2+ dopant cluster ions
into a first region of said substrate resulting in N-type doping of
said substrate.
50. The method as recited in claim 49, wherein said generating step
comprises: providing a source of phosphine (PH.sub.3) gas;
providing a conduit between said source of phosphine (PH.sub.3) gas
and an ionization chamber to enable said gaseous phosphine
(PH.sub.3) to communicate with said ionization chamber; and
ionizing said phosphine (PH.sub.3) gas in said ionization
chamber.
51. The method as recited in claim 50, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
52. The method as recited in claim 50, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
53. The method as recited in claim 50, wherein said implanting step
includes the step of extracting P.sub.2+ ions from said ionization
chamber by an electric field.
54. The method as recited in claim 50, further including the step
of mass analyzing the extracted ions by selecting the P.sub.2+
species.
55. The method as recited in claim 50, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
56. The method as recited in claim 55, wherein said generating step
comprises generating negative decaborane cluster ion
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
57. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type cluster dopant ions
P.sub.4H.sub.x+, where x is an integer and 1.ltoreq.x.ltoreq.6; and
implanting said N-type P.sub.4H.sub.x+ dopant cluster ions into a
first region of said substrate resulting in N-type doping of said
substrate.
58. The method as recited in claim 57, wherein said generating step
comprises: providing a source of phosphine (PH.sub.3) gas;
providing a conduit between said source of phosphine (PH.sub.3) gas
and an ionization chamber to enable said gaseous phosphine
(PH.sub.3) to communicate with said ionization chamber; and
ionizing said phosphine (PH.sub.3) gas in said ionization
chamber.
59. The method as recited in claim 58, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
60. The method as recited in claim 58, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
61. The method as recited in claim 58, wherein said implanting step
includes the step of extracting P.sub.4H.sub.x+ ions from said
ionization chamber by an electric field, where x is an integer and
1.ltoreq.x.ltoreq.6.
62. The method as cited in claim 61, further including the step of
mass analyzing the extracted ions by selecting said dopant cluster
ions.
63. The method as recited in claim 57, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
64. The method as recited in claim 63, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
65. A method of implanting dopant materials into a semiconductor
substrate comprising: generating N-type cluster dopant ions
P.sub.3H.sub.x+, where x is an integer and 1.ltoreq.x.ltoreq.5; and
implanting said N-type P.sub.3H.sub.x+ dopant cluster ions into a
first region of said substrate resulting in N-type doping of said
substrate.
66. The method as recited in claim 65, wherein said generating step
comprises: providing a source of phosphine (PH.sub.3) gas;
providing a conduit between said source of phosphine (PH.sub.3) gas
and an ionization chamber to enable said gaseous phosphine
(PH.sub.3) to communicate with said ionization chamber; and
ionizing said phosphine (PH.sub.3) gas in said ionization
chamber.
67. The method as recited in claim 66, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
68. The method as recited in claim 66, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
69. The method as recited in claim 66, wherein said implanting step
includes the step of extracting said dopant cluster ions from said
ionization chamber by an electric field.
70. The method as cited in claim 66, further including the step of
mass analyzing the extracted ions and selecting said dopant cluster
ions.
71. The method as recited in claim 65, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
72. The method as recited in claim 71, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
73. A method of implanting dopant materials into a semiconductor
substrate comprising: generating an N-type cluster dopant ions
P.sub.2H.sub.x+, where x is an integer and 1.ltoreq.x.ltoreq.4 and
implanting said N-type P.sub.2H.sub.x+, dopant cluster ions into a
first region of said substrate resulting in N-type doping of said
substrate.
74. The method as recited in claim 73, wherein said generating step
comprises: providing a source of phosphine (PH.sub.3) gas;
providing a conduit between said source of phosphine (PH.sub.3) gas
and said ionization chamber to enable said gaseous phosphine
(PH.sub.3) to communicate with said ionization chamber; and
ionizing said phosphine (PH.sub.3) gas in said ionization
chamber.
75. The method as recited in claim 73, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
76. The method as recited in claim 73, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
77. The method as recited in claim 73, wherein said implanting step
includes the step of extracting said dopant ions from said
ionization chamber by an electric field.
78. The method as cited in claim 77, further including the step of
mass analyzing the extracted cluster ions and selecting the
P.sub.2H.sub.x+ species, where x is an integer and
1.ltoreq.x.ltoreq.4.
79. The method as recited in claim 73, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
80. The method as recited in claim 79, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14.
81. A method of implanting a cluster ion dopant material into a
semiconductor substrate comprising the steps of: generating a
dopant ion cluster, B.sub.nH.sub.x+, where n and x are integers and
2.ltoreq.n.ltoreq.9 and 0.ltoreq.x.ltoreq.14; and implanting said
dopant ion cluster into a first region of said substrate.
82. The method as recited in claim 81, wherein said generating step
comprises: providing a source of diborone (B.sub.2H.sub.6) gas;
providing a conduit between said source of diborone
(B.sub.2H.sub.6) gas and an ionization chamber to enable said
diborone (B.sub.2H.sub.6) gas to communicate with said ionization
chamber; and ionizing said diborone (B.sub.2H.sub.6) gas in said
ionization chamber.
83. The method as recited in claim 82, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
84. The method as recited in claim 82, further including the step
of controlling the temperature of said ionization chamber to a
predetermined value.
85. The method as recited in claim 82, wherein said implanting step
includes the step of extracting said dopant cluster ions from said
ionization chamber by an electric field
86. The method as cited in claim 95, further including the step of
mass analyzing the extracted ions by selecting said dopant cluster
ions.
87. The method as recited in claim 81, further including the step
of: generating P-type dopant cluster ions; and implanting said
P-type dopant cluster ions into said substrate into a second region
different than said first region.
88. The method as recited in claim 87, wherein said generating step
comprises generating negative decaborane cluster ions
(B.sub.10H.sub.x.sup.-) where x is an integer and
0.ltoreq.x.ltoreq.14.
89. A method of implanting dopant materials into a semiconductor
substrate comprising: generating P-type negative decaborane cluster
dopant ions (B.sub.10H.sub.x.sup.-), where x is an integer and
0.ltoreq.x.ltoreq.14; and implanting said negative decaborane
(B.sub.10H.sub.x.sup.-) dopant cluster ions into a first region on
said substrate resulting in P-type doping of said substrate.
90. The method as recited in claim 88, wherein said generating step
comprises: providing a source of decaborane (B.sub.10H.sub.14)
vapor; providing a conduit between said source of decaborane
(B.sub.10H.sub.14) vapor and an ionization chamber to enable said
decaborane (B.sub.10H.sub.14) vapor to communicate with said
ionization chamber; and ionizing said decaborane (B.sub.10H.sub.14)
vapor in said ionization chamber.
91. The method as recited in claim 90, wherein said ionizing step
comprises irradiation within said ionization chamber by one or more
electron beams.
92. The method as recited in claim 90, wherein further including
the step of controlling the temperature of said ionization chamber
to a predetermined value.
93. The method as recited in claim 90, wherein said implanting step
includes the step of extracting negative decaborane cluster ions
B.sub.10H.sub.x.sup.- from said ionization chamber, where x is an
integer and 0.ltoreq.x.ltoreq.14.
94. The method as recited in claim 93, further including the step
of mass analyzing negative decaborane cluster ions
B.sub.10H.sub.x.sup.-, species where x equals
0.ltoreq.x.ltoreq.14.
95. A semiconductor device comprising: a substrate having one or
more N-type regions formed from an N-type material; and a P-type
dopant implanted into said N-type region, said P-type dopant formed
by implantation of negative decaborane cluster ions
B.sub.10H.sub.x.sup.- into said p-type region, where x is an
integer and 0.ltoreq.x.ltoreq.14.
96. The method as recited in claim 8, wherein said generating step
comprises generating positive decaborane (B.sub.10H.sub.x+) cluster
ions, where 0.ltoreq.x.ltoreq.14.
97. The method as recited in claim 17, wherein said generating step
comprises generating positive decaborane (B.sub.10H.sub.x+) cluster
ions, where 0.ltoreq.x.ltoreq.14.
98. The method as recited in claim 26, wherein said generating step
comprises generating positive decaborane (B.sub.10H.sub.x+) cluster
ions, where 0.ltoreq.x.ltoreq.14.
99. The method as recited in claim 35, wherein said generating step
comprises generating positive decaborane (B.sub.10H.sub.x+) cluster
ions, where 0.ltoreq.x.ltoreq.14.
100. The method as recited in claim 44, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
101. The method as recited in claim 53, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
102. The method as recited in claim 62, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
103. The method as recited in claim 71, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
104. The method as recited in claim 80, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
105. The method as recited in claim 89, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
106. The method as recited in claim 98, wherein said generating
step comprises generating positive decaborane (B.sub.10H.sub.x+)
cluster ions, where 0.ltoreq.x.ltoreq.14.
107. A method of forming cluster ions comprising: providing a
supply of dopant atoms into an ionization chamber; and combining
the dopant atoms into clusters containing a plurality of dopant
atoms.
108. The method as recited in claim 107 further comprising:
ionizing the dopant clusters into dopant cluster ions; extracting
said dopant cluster ions; and implanting said dopant cluster ions
into a substrate.
109. The method as recited in claim 107, wherein said supply of
dopant atoms is in the form of A.sub.sH.sub.3.
110. The method as recited in claim 109, wherein said supply of
dopant atoms is in the form of PH.sub.3.
111. The method as recited in claim 109, wherein said supply of
dopant atoms is in the form of B.sub.2H.sub.6.
112. A method of forming cluster ions comprising: providing a
supply of dopant molecules into an ionization chamber; and
combining the dopant molecules into clusters containing a plurality
of dopant molecules.
113. The method as recited in claim 112 further comprising:
ionizing the dopant clusters into dopant cluster ions; extracting
said dopant cluster ions; and implanting said dopant cluster ions
into a substrate.
114. The method as recited in claim 113, wherein said supply of
dopant atoms is in the form of A.sub.sH.sub.3.
115. The method as recited in claim 113, wherein said supply of
dopant atoms is in the form of PH.sub.3.
116. The method as recited in claim 113, wherein said supply of
dopant atoms is in the form of B.sub.2H.sub.6.
117. The method as recited in claim 81, wherein said generating
step comprises: providing a source of decaborane (B.sub.10H.sub.14)
vapor; providing a conduit between said source of decaborane
(B.sub.10H.sub.14) vapor and an ionization chamber to enable said
gas to communicate with said ionization chamber; and ionizing said
decaborane (B.sub.10H.sub.14) vapor in said ionization chamber.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This patent application is a continuation-in-part of
commonly owned copending U.S. patent application Ser. No. ______,
filed on Sep. 16, 2002, entitled Electron Beam Ion Source With
Integral Low-Temperature Vaporizer, by Thomas N, Horsky, which is a
continuation of U.S. patent application Ser. No. 09/736,097, filed
on Dec. 13, 2000, now U.S. Pat. No. 6,452,338. This patent
application also claims priority of commonly owned copending U.S.
provisional patent application serial No. 60/391,847, filed on Jun.
26, 2002, entitled Doping by the Implantation of Cluster Ions; and
commonly owned copending U.S. provisional patent application serial
No. 60/392,271, filed on Jun. 26, 2002, entitled Cluster Beam Ion
Implantation Using Negative Ions.
[0002] The following patent applications, herein incorporated by
reference, are also related to the present application: PCT
Application, Serial No. PCT/US00/33786, filed Dec. 13, 2000,
entitled "Ion Implantation Ion Source, System and Method"; PCT
Application Serial No. PCT/US01/18822, filed Jun. 12, 2001,
entitled "Ion Implantation with High Brightness, Low Emittance Ion
Source, Acceleration-Deceleration Transport System and Improved Ion
Source Construction"; and PCT Application Serial No.
PCT/US02/03258, filed Feb. 5, 2002, entitled, "Ion Source for Ion
Implantation"; U.S. patent application Ser. No. 10/183,768, filed
Jun. 26, 2002, entitled "Electron Impact Ion Source".
BACKGROUND OF THE INVENTION
[0003] 1. Field of the Invention
[0004] The present invention relates to an ion implantation system
and a method of semiconductor manufacturing which implants ion
beams formed from clusters of the N-type dopant cluster ions, such
as As.sub.4H.sub.x+ and P-type dopant cluster ions, such as
B.sub.10H.sub.x.sup.-.
[0005] 2. Description of the Prior Art
[0006] The fabrication of semiconductor devices involves, in part,
the introduction of impurities into the semiconductor substrate to
form doped regions. The impurity elements are selected to bond
appropriately with the semiconductor material to create an
electrical carrier and change the electrical conductivity of the
semiconductor material. The electrical carrier can either be an
electron (generated by N-type dopants) or a hole (generated by
P-type dopants). The concentration of introduced dopant impurities
determines the electrical conductivity of the resultant region.
Many such N- and P-type impurity regions must be created to form
transistor structures, isolation structures and other such
electronic structures, which collectively function as a
semiconductor device.
[0007] The conventional method of introducing dopants into a
semiconductor substrate is by ion implantation. In ion
implantation, a feed material containing the desired element is
introduced into an ion source and energy is introduced to ionize
the feed material, creating ions which contain the dopant element
(for example, the elements .sup.75As, .sup.11B, .sup.115In,
.sup.31P, or .sup.121Sb. An accelerating electric field is provided
to extract and accelerate the typically positively-charged ions,
thus creating an ion beam. Then, mass analysis is used to select
the species to be implanted, as is known in the art, and the ion
beam is directed at a semiconductor substrate. The accelerating
electric field gives the ions kinetic energy, which allows the ions
to penetrate into the target. The energy and mass of the ions
determine their depth of penetration into the target, with higher
energy and/or lower mass ions allowing deeper penetration into the
target due to their greater velocity. The ion implantation system
is constructed to carefully control the critical variables in the
implantation process, such as the ion beam energy, ion beam mass,
ion beam current (electrical charge per unit time), and ion dose at
the target (total number of ions per unit area that penetrate into
the target). Further, beam angular divergence (the variation in the
angles at which the ions strike the substrate) and beam spatial
uniformity and extent must also be controlled in order to preserve
semiconductor device yields.
[0008] It has recently been recognized, for example, by Kishimoto
et al., "A High-Current Negative-Ion Implanter and its Application
for Nanocrystal Fabrication in Insulators", IEEE Proceedings of the
XII.sup.th International Conference on Ion Implantation Technology,
Kyoto, Japan, pp. 342-345 (1999), and Ishikawa et al.,
"Negative-Ion Implantation Technique", Nuclear Instruments and
Methods in Physics Research B 96, pp. 7-12 (1995), and others in
the field that implanting negative ions offers advantages over
implanting positive ions. One very important advantage of negative
ion implantation is to reduce the ion implantation-induced surface
charging of modern processor and memory devices during the
manufacturing process. In general, the implantation of high
currents (on the order of 1 mA or greater) of positive ions creates
a positive potential on the gate oxides and other components of the
semiconductor device which can easily exceed gate oxide damage
thresholds. When a positive ion impacts the surface of a
semiconductor device, it not only deposits a net positive charge,
but liberates secondary electrons at the same time, multiplying the
charging effect. Thus, equipment vendors of ion implantation
systems have developed sophisticated charge control devices,
so-called electron flood guns, to introduce low-energy electrons
into the positively-charged ion beam and onto the surface of the
device wafers during the implantation process. Such electron flood
systems introduce additional variables into the manufacturing
process, and cannot completely eliminate yield losses due to
surface charging. As semiconductor devices become smaller and
smaller, transistor operating voltages and gate oxide thicknesses
become smaller as well, reducing the damage thresholds in
semiconductor device manufacturing, further reducing yield. Hence,
negative ion implantation potentially offers a substantial
improvement in yield over conventional positive ion implantation
for many leading-edge processes. Unfortunately, this technology is
not yet commercially available, and indeed negative ion
implantation has not to the author's knowledge been used to
fabricate integrated circuits, even in research and
development.
[0009] Prior art negative ion sources have relied upon so-called
negative affinity sputter targets. A heavy inert gas, such as
xenon, is fed into a plasma source which creates Xe.sup.+ ions.
Once produced, the Xe.sup.+ ions are drawn to a negatively-biased
sputter target which has been coated with cesium vapor or other
suitable alkaline material. The energetic Xe.sup.+ ions sputter
away the neutral target atoms, some of which pick up an electron
while leaving the target surface due to the negative electron
affinity of the cesium coating. Once negatively charged, the target
ions are repelled from the target and can be collected from the ion
source by electrostatic ion optics and focused into a negative ion
beam. While it is possible to produce semiconductor dopant ions
such as boron by this method, the ion currents tend to be low, the
beam emittance tends to be large, and the presence of cesium vapor
presents a nearly unacceptable risk to wafer yield, since alkaline
metals are considered very serious contaminants to silicon
processing. Hence, a more commercially viable negative ion source
technology is needed.
[0010] Of particular interest in semiconductor manufacturing
process is the formation of p-n junctions within the semiconductor
substrate. This requires the formation of adjacent regions of
n-type and p-type doping. One general example of the formation of a
junction is the implantation of n-type dopant into a semiconductor
region already containing a uniform distribution of p-type dopant.
In such a case, an important parameter is the junction depth, which
is defined as the depth from the semiconductor surface at which the
n-type and p-type dopants have equal concentrations. This junction
depth is dependent primarily on the implanted dopant mass, energy
and dose.
[0011] An important aspect of modem semiconductor technology is the
continuous evolution to smaller and faster devices. This process is
called scaling. Scaling is driven by the continuous development of
improvements to the lithographic process, allowing the definition
of smaller and smaller features in the semiconductor substrate
containing the integrated circuit. A generally accepted scaling
theory has been developed to guide chip manufacturers in the
appropriate resize of all aspects of the semiconductor device
design at the same time, i.e., at each technology or scaling node.
The greatest impact of scaling on ion implantation process is the
scaling of junction depths, which requires increasingly shallow
junctions as the device dimensions are decreased. The requirement
for increasingly shallow junctions as integrated circuit technology
scales translates into the following requirement: ion implantation
energies must be reduced with each scaling step. Recently, the ion
energy required for many critical implants has decreased to the
point that conventional ion implantation systems, which were
originally developed to generate much higher energy beams, are not
effective at providing the necessary implant. These extremely
shallow junctions are termed "Ultra-Shallow Junctions" or USJ.
[0012] The limitations of conventional ion implantation systems at
low beam energy are most evident in the extraction of ions from the
ion source, and their subsequent transport through the implanter's
beam line. Ion extraction is governed by the Child-Langmuir
relation which states that the extracted beam current density is
proportional to the extraction voltage (i.e., beam energy at
extraction) raised to the {fraction (3/2)} power. FIG. 1 is a graph
of maximum extracted arsenic beam current versus extraction
voltage. For simplicity, an assumption has been made that only
.sup.75As.sup.+ ions are present in the extracted beam. FIG. 1
shows that as the energy is reduced, extraction current drops
quickly. In a conventional ion implanter, this regime of
"extraction-limited" operation is seen at energies less than about
10 keV. Similar constraints occur in transporting the low-energy
beam. A lower energy ion beam travels with lower velocity, and
hence for a given value of beam current the ions are closer
together, i.e., the ion density increases. This can be seen from
the relation J=nev, where J is the ion beam current density in
mA/cm.sup.2, n is the ion density in cm.sup.-3, e is the electronic
charge (=6.02.times.10.sup.-19 Coulombs), and v is the average ion
velocity in cm/s. Since the electrostatic force between ions is
inversely proportional to the square of the distance between them,
this mutually repulsive force is much stronger at low energy, and
thus disperses the ion beam. This phenomenon is called "beam
blow-up". While low-energy electrons present in the implanter's
beam line tend to be trapped by the positively-charged ion beam and
help compensate for space-charge blow-up during transport,
nevertheless blow-up still occurs, and most pronounced in the
presence of electrostatic focusing lenses, which tend to strip away
the loosely-bound, highly mobile compensating electrons from the
beam. Low-energy beam transport can be difficult for massive atoms
such as arsenic (75 amu), since at a given ion energy, the ion
velocity is lower than for lighter atoms. Severe extraction and
transport difficulties also exist for the p-type dopant, boron.
Boron transport is made difficult by the extremely low implantation
energies (e.g., less than 1 keV) required by certain leading edge
processes, and the fact that most of the ions extracted and
transported from a typical BF.sub.3 source plasma are not the
desired ion .sup.11B.sup.+, but rather ion fragments, such as
.sup.19F.sup.+ and .sup.49BF.sub.2.sup.+, which serve to increase
the charge density and average mass of the extracted ion beam.
Looking to the future of VLSI semiconductor manufacturing, these
difficulties in transporting significant currents of low-energy As
and B combine to make the formation of USJ very challenging.
[0013] One way to benefit from the Child-Langmuir equation
discussed above is to increase the mass of the ion, for example, as
illustrated in FIG. 1a, by ionizing a molecule containing the
dopant of interest, rather than a dopant atom. In this way, while
the kinetic energy of the molecule is higher during transport, upon
entering the substrate, the molecule breaks up into its constituent
atoms, sharing the energy of the molecule among the individual
atoms according to their distribution in mass, so that the dopant
atom's implantation energy is much lower than its original
transport kinetic energy. Consider a dopant atom "X" bound to a
radical "Y" (disregarding for argument's sake the question of
whether "Y" affects the device-forming process). If the ion
XY.sup.+ were implanted in lieu of X.sup.+, then XY.sup.+ must be
extracted and transported at a higher energy, increased by a factor
equal to the {(mass of XY)/(mass of X)}; this ensures that the
velocity of X remains unchanged. Since the space-charge effects
described by the Child-Langmuir equation discussed above are
superlinear with respect to ion energy, the maximum transportable
ion current is increased. Historically, the use of polyatomic
molecules to address the problems of low energy implantation is
known in the art. A common example has been the use of the
BF.sub.2.sup.+ molecular ion for the implantation of low-energy
boron, in lieu of B.sup.+. This process dissociates BF.sub.3 feed
gas to the BF.sub.2.sup.+ ion for implantation. In this way, the
ion mass is increased to 49 AMU, allowing an increase of the
extraction and transport energy by almost a factor of 5 (i.e.,
{fraction (49/11)}) over using single boron atoms. Upon
implantation, however, the boron energy is reduced by the same
factor of ({fraction (49/11)}). We note that this approach does not
reduce the current density in the beam, since there is only one
boron atom per unit charge in the beam. In addition, this process
also implants fluorine atoms into the semiconductor substrate along
with the boron, however fluorine has been known to exhibit adverse
effects on the semiconductor device.
[0014] There has also been molecular ion work using decaborane as a
polyatomic molecule, for ion implantation, as reported by Jacobson
et al., "Decaborane, an alternative approach to ultra low energy
ion implantation", IEEE Proceedings of the XIII.sup.tIh
International Conference on Ion Implantation Technology, Alpsbach,
Austria, pp. 300-303 (2000), and by Yamada, "Applications of gas
cluster ion beams for materials processing", Materials Science and
Engineering A217/218, pp. 82-88 (1996). In this case, the implanted
particle was an ion of the decaborane molecule, B.sub.10H.sub.14,
which contains 10 boron atoms, and is therefore a "cluster" of
boron atoms. This technique not only increases the mass of the ion,
but for a given ion current, it substantially increases the
implanted dose rate, since the decaborane ion B.sub.10H.sub.x.sup.+
has ten boron atoms per unit charge. This is a very promising
technology for the formation of USJ p-type
metal-oxide-semiconductor (PMOS) transistors in silicon, and in
general for implanting very low-energy boron. Significantly
reducing the electrical current carried in the ion beam (by a
factor of 10 in the case of decaborane ions), not only reduces beam
space-charge effects, but wafer charging effects as well. Since
charging of the wafer, particularly the gate oxides, by positive
ion beam bombardment, is know to reduce device yields by damaging
sensitive gate isolation, such a reduction in electrical current
through the use of cluster ion beams is very attractive for USJ
device manufacturing, which must increasingly accomodate
exceedingly low gate threshold voltages. It is to be noted that in
these two examples of P-type molecular implantation, the ions are
created by simple ionization of the feed material rather than by
the conglomeration of feed material into clusters. It is also to be
noted that there has not, until now, been a comparable technology
developed for producing n-type molecular dopant ions. The future
success of complementary metal-oxide-semiconductor (CMOS)
processing may well depend on the commercialization of viable N-
and P-type polyatomic implantation technologies. Thus there is a
need to solve two distinct problems facing the semiconductor
manufacturing industry today: wafer charging, and low productivity
in low-energy ion implantation.
[0015] Ion implanters have historically been segmented into three
fundamental types: high current, medium current, and high energy
implanters. Cluster beams are useful for high current and
medium-current implantation processes. More particularly, today's
high current implanters are primarily used to form the low-energy,
high dose regions of the transistor such as drain structures and
doping of the polysilicon gates. They are typically batch
implanters, i.e., processing many wafers mounted on a spinning
disk, while the ion beam remains stationary. High current beam
lines tend to be simple and incorporate a large acceptance of the
ion beam; at low energy and high currents, the beam at the
substrate tends to be large, with a large angular divergence.
Medium-current implanters typically incorporate a serial (one wafer
at a time) process chamber, which offers a high tilt capability
(e.g., up to 60 degrees from substrate normal). The ion beam is
typically electromagnetically scanned across the wafer in an
orthogonal direction, to ensure dose uniformity. In order to meet
commercial implant dose uniformity and repeatability requirements
of typically only a few percent variance, the ion beam should have
excellent angular and spatial uniformity (angular uniformity of
beam on wafer of <2 deg, for example). Because of these
requirements, medium-current beam lines are engineered to give
superior beam control at the expense of limited acceptance. That
is, the transmission efficiency of the ions through the implanter
is limited by the emittance of the ion beam. Presently, the
generation of higher current (about 1 mA) ion beams at low (<10
keV) energy is problematic in serial implanters, such that wafer
throughput is unacceptably low for certain lower-energy implants
(for example, in the creation of source and drain structures in
leading-edge CMOS processes). Similar transport problems also exist
for batch implanters (processing many wafers mounted on a spinning
disk) at the low beam energies of <5 keV per ion.
[0016] While it is possible to design beam transport optics which
are nearly aberration-free, the ion beam characteristics (spatial
extent, spatial uniformity, angular divergence and angular
uniformity) are nonetheless largely determined by the emittance
properties of the ion source itself (i.e., the beam properties at
ion extraction which determine the extent to which the implanter
optics can focus and control the beam as emitted from the ion
source). The use of cluster beams instead of monomer beams can
significantly enhance the emittance of an ion beam by raising the
beam transport energy and reducing the electrical current carried
by the beam. Thus, there is a need for cluster ion and cluster ion
source technology in semiconductor manufacturing to provide a
better-focused, more collimated and more tightly controlled ion
beam on target, in addition to providing higher effective dose
rates and higher throughputs.
SUMMARY OF THE INVENTION
[0017] An object of this invention is to provide a method of
manufacturing a semiconductor device, this method being capable of
forming ultra-shallow impurity-doped regions of n-type (i.e.,
acceptor) conductivity in a semiconductor substrate, and
furthermore to do so with high productivity.
[0018] Another object of this invention is to provide a method of
manufacturing a semiconductor device, this method being capable of
forming ultra-shallow impurity-doped regions of either N- or P-type
(i.e., acceptor or donor) through the use of N- and P-type clusters
of the form As.sub.nH.sub.x.sup.+, where n=3 or 4 and
0.ltoreq.x.ltoreq.n+2 for the N-type cluster, and either
B.sub.10H.sub.x.sup.+ or B.sub.10H.sub.x.sup.- for the P-type
cluster.
[0019] A further object of this invention is to provide a method of
implanting arsenic cluster ions of the form As.sub.3H.sub.x.sup.+
and As.sub.4H.sub.x.sup.+, the method being capable of forming
ultra-shallow implanted regions of n conductivity type in a
semiconductor substrate.
[0020] A further object of this invention is to provide a method of
making phosphorus cluster ions of the form P.sub.nH.sub.x.sup.+,
where n equals 2, 3, or 4 and x is in the range 0.ltoreq.x.ltoreq.6
by ionizing PH.sub.3 feed gas, and subsequently implanting said
phosphorus cluster into a semiconductor substrate to accomplish
N-type doping.
[0021] A further object of this invention is to provide a method of
making boron cluster ions of the form B.sub.nH.sub.x.sup.+, where n
equals 2, 3, or 4 and x is in the range 0.ltoreq.x.ltoreq.6 by
ionizing B.sub.2H.sub.6 feed gas, and subsequently implanting said
boron cluster into a semiconductor substrate to accomplish P-type
doping.
[0022] A still further object of this invention is to provide for
an ion implantation system for manufacturing semiconductor devices,
which has been designed to form ultra shallow impurity doped
regions of either N or P conductivity type in a semiconductor
substrate through the use of cluster ions.
[0023] According to one aspect of this invention, there is provided
a method of implanting cluster ions comprising the steps of:
providing a supply of dopant atoms or molecules into an ionization
chamber, combining the dopant atoms or molecules into clusters
containing a plurality of dopant atoms and ionizing the dopant
clusters into dopant cluster ions, extracting and accelerating the
dopant cluster ions with an electric field, mass analyzing the ion
beam, and implanting the dopant cluster ions into a semiconductor
substrate.
[0024] An object of this invention is to provide a method that
allows the semiconductor device manufacturer to ameliorate the
difficulties in extracting low energy ion beams by implanting a
cluster of n dopant atoms (n=4 in the case of
As.sub.4H.sub.x.sup.+) rather than implanting a single atom at a
time. The cluster ion implant approach provides the equivalent of a
low energy, monatomic implant since each atom of the cluster is
implanted with an energy of E/n. Thus, the implanter is operated at
an extraction voltage n times higher than the required implant
energy, which enables higher ion beam current, particularly at the
low implantation energies required by USJ formation. Considering
the ion extraction stage, the relative improvement enabled by
cluster ion implant can be quantified by evaluating the
Child-Langmuir limit. It is recognized that this limit can be
approximated by:
J.sub.max=1.72(Q/A).sup.1/2V.sup.3/2d.sup.-2, (1)
[0025] where J.sub.max is in mA/cm.sup.2, Q is the ion charge
state, A is the ion mass in AMU, V is the extraction voltage in kV,
and d is the gap width in cm. FIG. 1 is a graph of Eq. (1) for the
case of .sup.75As.sup.+ with d=1.27 cm. In practice, the extraction
optics used by many ion implanters can be made to approach this
limit. By extension of Eq. (1), the following figure of merit,
.DELTA., can be defined to quantify the increase in throughput, or
implanted dose rate, for a cluster ion implant relative to
monatomic implantation:
.DELTA.=n(U.sub.n/U.sub.1).sup.3/2(m.sub.n/m.sub.1).sup.-1/2.
(2)
[0026] Here, .DELTA. is the relative improvement in dose rate
(atoms/sec) achieved by implanting a cluster with n atoms of the
dopant of interest at an energy U.sub.n relative to the single atom
implant of an atom of mass m.sub.1 at energy U.sub.1, where
U.sub.1=eV. In the case where U.sub.n is adjusted to give the same
dopant implantation depth as the monatomic (n=1) case, equation (2)
reduces to:
.DELTA.A=n.sup.2. (3)
[0027] Thus, the implantation of a cluster of n dopant atoms has
the potential to provide a dose rate n.sup.2 higher than the
conventional implant of single atoms. In the case of
As.sub.4H.sub.x, for small x, this maximum dose rate improvement is
about a factor of sixteen. A comparison between low-energy As and
As.sub.4 implantation is shown in FIG. 2 to illustrate this
point.
[0028] The use of clusters for ion implant also addresses the
transport of low-energy ion beams. It is to be noted that the
cluster ion implant process only requires one electrical charge per
cluster, rather than having every dopant atom carrying one
electrical charge, as in the conventional case. The transport
efficiency (beam transmission) is thus improved, since the
dispersive Coulomb forces are reduced with a reduction in charge
density. In addition, the clusters have higher mass than their
monomers, and are therefore less affected by the intra-beam Coulomb
forces. Thus, implanting with clusters of n dopant atoms rather
than with single atoms ameliorates basic transport problems in low
energy ion implantation and enables a dramatically more productive
process.
[0029] Enablement of this method requires the formation of said
cluster ions. The conventional sources used in commercial ion
implanters produce only a very small fraction of primarily
lower-order (e.g., n=2) clusters relative to their production of
monomers, and hence these implanters cannot effectively realize the
low-energy cluster beam implantation advantages listed above.
Indeed, the intense plasmas provided by many conventional ion
sources rather dissociate molecules and clusters into their
component elements. The novel ion source described herein produces
cluster ions in abundance due to its use of a "soft" ionization
process, namely electron-impact ionization by energetic primary
electrons. The ion source of the present invention is designed
expressly for the purpose of producing and preserving dopant
cluster ions.
DESCRIPTION OF THE DRAWING
[0030] These and other advantages of the present invention will be
readily understood with reference to the following specification
and attached drawing wherein:
[0031] FIG. 1 is a graphical diagram illustrating maximum
.sup.75As.sup.+ beam current vs. extraction energy according to the
Child-Langmuir Law.
[0032] FIG. 1a is a graphical diagram illustrating a comparison of
maximum extraction current achievable through tetramer arsenic and
monomer arsenic.
[0033] FIG. 2 is a simplified diagram of the cluster ion source in
accordance with the present invention.
[0034] FIG. 2a is a perspective diagram of an exemplary embodiment
of the cluster ion source in accordance with the present
invention.
[0035] FIG. 3 is a simplified diagram of an exemplary cluster ion
implantation system in accordance with the present invention.
[0036] FIG. 4a is a diagram of a CMOS fabrication sequence during
formation of the NMOS drain extension.
[0037] FIG. 4b is a diagram of a CMOS fabrication sequence during
formation of the PMOS drain extension.
[0038] FIG. 5 is a diagram of a semiconductor substrate in the
process of manufacturing an NMOS semiconductor device, at the step
of n-type drain extension implant.
[0039] FIG. 5a is a diagram of a semiconductor substrate in the
process of manufacturing a NMOS semiconductor device, at the step
of the source/drain implant.
[0040] FIG. 5b is a diagram of a semiconductor substrate in the
process of manufacturing an PMOS semiconductor device, at the step
of n-type drain extension implant.
[0041] FIG. 5c is a diagram of a semiconductor substrate in the
process of manufacturing a PMOS semiconductor device, at the step
of the source/drain implant.
[0042] FIG. 6 is a graphical diagram of a mass spectrum of PH.sub.3
generated with the ion source of the present invention.
[0043] FIG. 7 is a graphical diagram of a mass spectrum of
AsH.sub.3 generated with the ion source of the present
invention.
[0044] FIG. 8 is a graphical illustration demonstrating On-wafer
As.sub.4H.sub.x.sup.+ ion currents in the low energy range.
[0045] FIG. 9 is a graphical illustration of the data illustrated
in FIG. 6 converted to units of beam brightness.
[0046] FIG. 10 is a graphical illustration of as-implanted SIMS
profiles of arsenic concentrations from AsH.sub.x.sup.+ and
As.sub.4H.sub.x.sup.+ ion beams implanted into silicon wafers using
the present invention, and comparison with TRIM calculations.
[0047] FIG. 11 is a graphical illustration of a mass spectrum of
B.sub.2H.sub.6 generated with the ion source of the present
invention.
[0048] FIG. 12 is a graphical illustration of recorded positive-ion
mass spectrum for the present invention operating with decaborane
feed material.
[0049] FIG. 13 is a graphical illustration of recorded negative-ion
mass spectrum for the present invention operating with decaborane
feed material.
[0050] FIG. 14 is a graphical illustration of recorded mass
spectrum of both negative-ion and positive-ion decaborane taken in
succession, also showing the dimer, B.sub.20H.sub.x. FIG. 15 is a
graphical illustration of as-implanted SIMS profiles of negative
and positive B.sub.10H.sub.x ions using the present invention, at a
decaborane implantation energy of 20 keV.
[0051] FIG. 16 is a graphical illustration of as-implanted SIMS
profiles of 20 keV decaborane implanted into silicon, showing B
concentration and H concentration.
DETAILED DESCRIPTION
[0052] FIG. 2 is a conceptual diagram of a cluster ion source 10
and its various components. A supply of feed gas 11 is provided,
such as a cylinder of AsH.sub.3, PH.sub.3, B.sub.2H.sub.6 or
vaporized B.sub.10H.sub.14. The feed material can be stored in a
cylinder as a gas at room temperature, or can be introduced as
vapor sublimated from a heated solid or evaporated from a liquid
phase. The feed gas supply 11 is connected to an ionization chamber
13 through a flow controller 12. The flow controller 12 can be as
sophisticated as a computer-controlled mass flow controller, or as
simple as a connecting tube with predetermined gas conductance. In
the latter case, the flow is varied by controlling the pressure of
the gas in 11. The controlled flow of dopant-containing gaseous
feed material creates a stable gas pressure within the ionization
chamber 13, for example, between approximately 3.times.10.sup.-4
Torr and 3.times.10.sup.-3 Torr. Ionization energy 14 is provided
in the form of a controlled current of electrons with a defined
energy or velocity. The temperature of ionization chamber 13 and
indeed of all the components of the ion source is typically
controlled to a desired value. By tuning the source pressure,
temperature, electron current, and electron energy, an environment
is created within the ionization chamber 13 such that the dopant
atoms or molecules of, for example, AsH.sub.3, combine to form
cluster ions that contain more than one atom of the desired dopant
element, for example, the tetramer compound As.sub.4H.sub.x.sup.+,
where x is an integer between 0 and 4.
[0053] An aperture 17 in the ionization chamber 13 allows ions to
escape into the beam path, extracted by a strong electric field
between ionization chamber 13 and an extraction electrode 15. This
extraction, or accelerating, field is generated by a high voltage
power supply which biases the ionization chamber 13 to a voltage V
relative to ground potential, the extraction electrode 15 being
near ground potential. The accelerating field is established in the
forward direction to attract positive ions out of the ionization
chamber 13, and in the reverse direction when negative ions are
desired. The accelerated ions are formed into an ion beam 16 by the
extraction electrode 15. The kinetic energy E of ion beam 16 is
given by Equation (4):
E=/qV/, (4)
[0054] where V is the source potential, and q is the electric
charge per ion. When V is expressed in volts and q is expressed in
units of electronic charge, E has units of electron-volts (eV).
[0055] The ion source described herein is one embodiment of a novel
electron impact ionization source. FIG. 2a is a cross-sectional
schematic diagram of the source construction which serves to
clarify the functionality of the components which make up the ion
source 10. The ion source 10 is made to interface to an evacuated
vacuum chamber of an ion implanter or other process tool by way of
a mounting flange 36. Thus, the portion of the ion source 10 to the
right of flange 36, shown in FIG. 2a, is at high vacuum (pressure
<1.times.10.sup.-4 Torr). Gaseous material is introduced into
the ionization chamber 44 in which the gas molecules are ionized by
electron impact from opposed electron beams 70a and 70b, which
enter the ionization chamber 44 through entrance apertures 71a and
71b, respectively, such that electron beams 70a and 70b are aligned
with ion extraction aperture 81. Thus, ions are created adjacent to
the ion extraction aperture 81, which appears as a slot in the ion
extraction aperture plate 80. The ions are then extracted and
formed into an energetic ion beam by an extraction electrode (not
shown) located in front of the ion extraction aperture plate
80.
[0056] Gases may be fed into the ionization chamber 44 via a gas
conduit 33. Solid feed materials can be vaporized in a vaporizer
28, and the vapor fed into the ionization chamber 44 through a
vapor conduit 32. Solid feed material 29, located under a
perforated separation barrier 34a, is held at a uniform temperature
by temperature control of the vaporizer housing 30. Vapor 50 which
accumulates in a ballast volume 31 feeds through conduit 39 and
through one or more shutoff valves 100 and 110. The vapor 50 then
feeds into the ionization chamber 44 through a vapor conduit 32,
located in the source block 35. Thus, both gaseous and solid
dopant-bearing materials may be ionized by this ion source.
[0057] The method herein described can be considered normal
operation of the ion source of the present invention where the only
difference from other operational modes is the user's choice of
values for the source parameters (feed material, feed gas flow
rate, electron ionization energy and current, and source component
temperature(s)). In the case illustrated in FIG. 2a, where
AsH.sub.3 is the feed gas, typical values of these source
parameters were: AsH.sub.3 flow rate=2.5 sccm, electron ionization
energy=1.7 keV, electron current=100 mA, and ionization chamber
temperature=200 C. One aspect of the ion source of the present
invention is user control of the ionization chamber temperature, as
well as the temperature of the source block and valves. The source
utilizes a combination of heating and cooling to achieve accurate
control of the source temperature. Separate temperature control is
provided for vaporizer 28, shutoff valves 100 and 110, source block
35, and ionization chamber 44. External electronic controllers
(such as an Omron model E5CK) are used for temperature control.
Heating is provided by embedded resistive heaters, whose heating
current is controlled by the electronic controller. Cooling is
provided by a combination of convective and conductive gas cooling
methods, as further described, for example, in commonly owned PCT
application US01/18822, and in U.S. application Ser. No.
10/183,768, both herein incorporated by reference.
[0058] FIG. 3 shows the ion source in conjunction with key
downstream elements which comprise a proposed cluster ion
implantation system. Configurations other than that shown in FIG. 3
are possible. The ion source 21 is coupled with extraction
electrode 22 to create an ion beam 20 which contains cluster ions.
The ion beam 20 typically contains ions of many different masses,
i.e., all of the species for which ions of a given charge polarity
are created in the ion source 21. The ion beam 20 then enters the
analyzer magnet 23. The analyzer magnet 23 creates a dipole
magnetic field within the ion beam transport path depending on the
current in the magnet coils; the direction of the magnetic field is
normal to the plane of FIG. 3. The function of the analyzer magnet
23 is to spatially separate the ion beam into a set of constituent
beamlets by bending the ion beam in an arc whose radius depends on
the mass-to-charge ratio of the discrete ions. Such an arc is shown
in FIG. 3 as a beam component 24, the selected ion beam. The magnet
23 bends a given beam along a radius given by Equation (5)
below:
R=(2mU).sup.1/2/qB (5)
[0059] where R is the bending radius, B is the magnetic flux
density, m is the ion mass, U is the ion kinetic energy and q is
the ion charge state.
[0060] The selected ion beam is comprised of ions of a narrow range
of mass-energy product only, such that the bending radius of the
ion beam by the magnet sends that beam through a mass-resolving
aperture 27. The components of the beam that are not selected do
not pass through the mass-resolving aperture 27, but are
intercepted elsewhere. For beams with smaller mass-to-charge ratios
m/q than the selected beam 25, for example comprised of hydrogen
ions having masses of 1 or 2 atomic mass units, the magnetic field
induces a smaller bending and the beam intercepts the inner radius
wall 30 of the magnet chamber, or elsewhere. For beams with larger
mass-to-charge ratios than the selected beam 26, the magnetic field
induces a larger bending radius, and the beam strikes the outer
radius wall 29 of the magnet chamber, or elsewhere. As is well
established in the art, the combination of analyzer magnet 23 and
mass-resolving aperture 27 comprise a mass analysis system which
selects the ion beam 24 from the multi-species beam 20 extracted
from the ion source. The selected beam 24 can then pass through a
post-analysis acceleration/deceleration stage 31. This stage 31 can
adjust the beam energy to the desired final energy value required
for the specific implantation process. The post-analysis
acceleration/deceleration stage 31 can take the form of an
electrostatic lens, or alternatively a LINAC (linear accelerator),
for example. In order to prevent ions which have undergone
charge-exchange or neutralization reactions between the resolving
aperture and the wafer (and therefore do not possess the correct
energy) from propagating to the wafer, a "neutral beam filter" or
"energy filter" can be incorporated within this beam path. For
example, the post-analysis acceleration/deceleration stage 31 can
incorporate a "dogleg" or small-angle deflection in the beam path
which the selected ion beam 24 is constrained to follow through an
applied DC electromagnetic field; beam components which have become
neutral or multiply-charged, however, would necessarily not follow
this path. The energy-adjusted beam then enters a beam scanning
system 32, in the implantation system depicted in FIG. 3. The beam
scanning system 32 scans the beam so that the entire target 28 is
uniformly implanted. Various configurations are possible, with
one-dimensional or two-dimensional scanning, and electrostatic
versus magnetic scanning systems, for example.
[0061] The beam then enters the wafer process chamber 33, also held
in a high vacuum environment, where it strikes the target 28.
Various configurations of wafer processing chambers, and wafer
handling systems are possible, the major categories being serial
(one wafer at a time) or batch (many wafers processed together on a
spinning disk). In a serial process chamber, typically one
dimension (either lateral or vertical) is mechanically scanned
across the beam, which is electromagnetically scanned in the
orthogonal direction, to ensure good spatial uniformity of the
implant. In a batch system, spinning of the disk provides
mechanical scanning in the radial direction, and either vertical or
horizontal scanning of the spinning disk is also effected at the
same time, the ion beam remaining stationary.
[0062] For cluster ion implantation to provide accurate dopant
placement, it is necessary that each of n dopant atoms contained
within the cluster penetrate the substrate with the same kinetic
energy; in the simplest case in which the molecular ion is of the
form A.sub.n.sup.+ (that is, it is uniquely comprised of n dopant
atoms A), each of the n dopant atoms must receive the same fraction
1/n of the cluster's energy upon penetration into the semiconductor
substrate. It has been established, for example by Sze, in VLSI
Technology, McGraw Hill, pp. 253-254 (1983), that this equal
division of energy occurs whenever a polyatomic molecule impacts a
solid target surface. Furthermore, it is necessary that the
electrical results of such implantation are the same as the
equivalent implant using single atom ion implantation. Such results
have been shown by Jacobson et al., "Decaborane, an alternative
approach to ultra low energy ion implantation", IEEE Proceedings of
the XIII.sup.tIh International Conference on Ion Implantation
Technology, Alpsbach, Austria, pp. 300-303 (2000), in detail for
the case of implantation with decaborane, and indeed we expect
similar results for any dopant cluster.
[0063] During ion implantation, dopant atoms may penetrate more
deeply into the semiconductor substrate by channeling, i.e., by
entering the substrate crystal lattice along a symmetry direction
which contains a low density of lattice atoms, or a "channel". If
the ion trajectory coincides with the direction of a channel in the
semiconductor crystal lattice, the ion substantially avoids
collisions with the substrate atoms, extending the range of the
dopant projectile. An effective means to limit or even prevent
channeling consists of forming an amorphous layer at the surface of
the substrate. One means of creating such a layer is to implant the
substrate either with ions of the same element(s) of which the
substrate consists or with ions having the same electrical
properties (i.e., from the same column of the periodic table), such
that the crystal damage caused by the implantation process is
sufficient to eliminate the crystalline structure of a layer at the
substrate surface without subsequently altering the electrical
properties of the substrate during the activation step. For
example, silicon or germanium ions may be implanted into a silicon
substrate at an energy of 20 keV at a dose of 5.times.10.sup.14
cm.sup.-2 to form such an amorphous layer in a silicon substrate,
followed by the implantation of the shallow dopant layer by cluster
ion implantation.
[0064] An important application of this method is the use of
cluster ion implantation for the formation of n- and p-type shallow
junctions as part of a CMOS fabrication sequence. CMOS is the
dominant digital integrated circuit technology in current use and
its name denotes the formation of both n-channel and p-channel MOS
transistors (Complementary MOS: both n and p) on the same chip. The
success of CMOS is that circuit designers can make use of the
complementary nature of the opposite transistors to create a better
circuit, specifically one that draws less active power than
alternative technologies. It is noted that the n and p terminology
is based on negative and positive (n-type semiconductor has
negative majority carriers, and vice versa), and the n-channel and
p-channel transistors are duplicates of each other with the type
(polarity) of each region reversed. The fabrication of both types
of transistors on the same substrate requires sequentially
implanting an n-type impurity and then a p-type impurity, while
protecting the other type of devices with a shielding layer of
photoresist. It is noted that each transistor type requires regions
of both polarities to operate correctly, but the implants which
form the shallow junctions are of the same type as the transistor:
n-type shallow implants into n-channel transistors and p-type
shallow implants into p-channel transistors. An example of this
process is shown in FIGS. 4a and 4b. In particular, FIG. 4a
illustrates a method for forming the n-channel drain extension 89
through an n-type cluster implant 88, while FIG. 4b shows the
formation of the p-channel drain extension 90 by a p-type cluster
implant 91. It is to be noted that both N- and P-types of
transistors requires shallow junctions of similar geometries, and
thus having both n-type and p-type cluster implants is advantageous
for the formation of advanced CMOS structures.
[0065] An example of the application of this method is shown in
FIG. 5 for the case of forming an NMOS transistor. This figure
shows semiconductor substrate 41 which has undergone some of the
front-end process steps of manufacturing a semiconductor device.
The structure consists of a N-type semiconductor substrate 41 that
has been processed through the p-well 43, trench isolation 42, and
gate stack formation 44, 45 steps. The p-well 43 forms a junction
with the n-type substrate 41 that provides junction isolation for
the transistors in the well. The trench isolation 42 provides
lateral dielectric isolation between the N- and P-wells (i.e., in
the overall CMOS structure). The gate stack is then constructed,
containing the gate oxide layer 44 and the polysilicon gate
electrode 45, which have been patterned to form the transistor gate
stack. Also, photoresist 46 has been applied and patterned such
that the area for NMOS transistors is open, but other areas of the
substrate are shielded by the photoresist layer 46. At this point
in the process flow, the substrate is ready for the drain extension
implant, which is the shallowest doping layer required by the
device fabrication process. A typical process requirement for
leading-edge devices of the 0.13 .mu.m technology node is an
arsenic implant energy of between 1 keV and 2 keV, and an arsenic
dose of 5.times.10.sup.14 cm.sup.-2. The cluster ion beam 47,
As.sub.4H.sub.x.sup.+ in this case, is directed at the
semiconductor substrate, typically such that the direction of
propagation of the ion beam is normal to the substrate, to avoid
shadowing by the gate stack. The energy of the
As.sub.4H.sub.x.sup.+ cluster should be four times the desired
As.sup.+ implant energy, e.g., between 4 keV and 8 keV. The
clusters dissociate upon impact with the substrate, and the dopant
atoms come to rest in a shallow layer near the surface of the
semiconductor substrate, which forms the drain extension region 48.
We note that the same implant enters the surface layer of the gate
electrode 49, providing additional doping for the gate electrode.
The process described in FIG. 5 is thus one important application
of the proposed invention.
[0066] A further example of the application of this method is shown
in FIG. 5a: the formation of the deep source/drain regions. This
figure shows the semiconductor substrate 41 of FIG. 5 after
execution of further processes steps in the fabrication of a
semiconductor device. The additional process steps include the
formation of a pad oxide 51 and the formation of spacers 52 on the
sidewalls of the gate stack. At this point, a photoresist layer 53
is applied and patterned to expose the transistor to be implanted,
an NMOS transistor in this example. Next, the ion implant to form
the source and drain regions 55 is performed. Since this implant
requires a high dose at low energy, it is an appropriate
application of the proposed cluster implantation method. Typical
implant parameters for the 0.13 .mu.m technology node are
approximately 6 keV per arsenic atom (54) at an arsenic dose of
5.times.10.sup.15 cm.sup.-2, so it requires a 24 keV,
1.25.times.10.sup.15 cm.sup.-2 As.sub.4H.sub.x.sup.+ implant, a 12
keV, 2.5.times.10.sup.15 cm.sup.-2 As.sub.2H.sub.x.sup.+ implant,
or a 6 keV, 5.times.10.sup.15 cm.sup.-2 As.sup.+ implant. As shown
in FIG. 5, the source and drain regions 55 are formed by this
implant. These regions provide a high conductivity connection
between the circuit interconnects (to be formed later in the
process) and the intrinsic transistor defined by the drain
extension 48 in conjunction with the channel region 56 and the gate
stack 44, 45. It may be noted that the gate electrode 45 can be
exposed to this implant (as shown), and if so, the source/drain
implant provides the primary doping source for the gate electrode.
This is shown in FIG. 5a as the poly doping layer 57.
[0067] The detailed diagrams showing the formation of the PMOS
drain extension 148 and PMOS source and drain regions 155 are shown
in FIGS. 5b and 5c, respectively. The structures and processes are
the same as in FIGS. 5a and 5b with the dopant types reversed. In
FIG. 5b, the PMOS drain extension 148 is formed by the implantation
of a boron cluster implant 147. Typical parameters for this implant
would be an implant energy of 500 eV per boron atom with a dose of
5.times.10.sup.14 cm.sup.-2, for the 0.13 um technology node. Thus,
a B.sub.10H.sub.x implant would be at 5 keV and a decaborane dose
of 5.times.10.sup.13 cm.sup.-2. FIG. 5c shows the formation of the
PMOS source and drain regions 148, again by the implantation of a
p-type cluster ion beam 154 such as decaborane. Typical parameters
for this implant would be an energy of around 2 keV per boron atom
with a boron dose of 5.times.10.sup.15 cm.sup.-2 (i.e., 20 keV
decaborane at 5.times.10.sup.14 cm.sup.-2) for the 0.13 um
technology node.
[0068] In general, ion implantation alone is not sufficient for the
formation of an effective semiconductor junction: a heat treatment
is necessary to electrically activate the implanted dopants. After
implantation, the semiconductor substrate's crystal structure is
heavily damaged (substrate atoms are moved out of crystal lattice
positions), and the implanted dopants are only weakly bound to the
substrate atoms, so that the implanted layer has poor electrical
properties. A heat treatment, or anneal, at high temperature
(greater than 900C) is typically performed to repair the
semiconductor crystal structure, and to position the dopant atoms
substitutionally, i.e., in the position of one of the substrate
atoms in the crystal structure. This substitution allows the dopant
to bond with the substrate atoms and become electrically active;
that is, to change the conductivity of the semiconductor layer.
This heat treatment works against the formation of shallow
junctions, however, because diffusion of the implanted dopant
occurs during the heat treatment. Boron diffusion during heat
treatment, in fact, is the limiting factor in achieving USJ's in
the sub-0.1 micron regime. Advanced processes have been developed
for this heat treatment to minimize the diffusion of the shallow
implanted dopants, such as the "spike anneal". The spike anneal is
a rapid thermal process wherein the residence time at the highest
temperature approaches zero: the temperature ramps up and down as
fast as possible. In this way, the high temperatures necessary to
activate the implanted dopant are reached while the diffusion of
the implanted dopants is minimized. It is anticipated that such
advanced heat treatments would be utilized in conjunction with the
present invention to maximize its benefits in the fabrication of
the completed semiconductor device.
[0069] FIG. 6 demonstrates the creation of phosphorus cluster ions
and the formation of mass-resolved phosphorus cluster ion beams.
This mass spectrum shows data taken during of operation of the ion
source of the present invention, using phosphine (PH.sub.3) as the
source feed gas. This mass spectrum shows the intensity of ion
current on the vertical scale 61 versus analyzer magnetic field,
which determines ion mass-to-charge ratio, on horizontal scale 62.
Currents were measured in a Faraday cup in which secondary
electrons were effectively suppressed. Horizontal scale 62, being
linear with magnetic field, is nonlinear in mass-to-charge ratio,
since for a given extraction voltage V the two quantities are
related by m/q=aB.sup.2, where a is a constant. This makes higher
mass peaks closer together on horizontal scale 62. The phosphorus
clusters are observed as the signals 65, 66 and 67 having two,
three and four phosphorus atoms per cluster, respectively. Analysis
of this spectrum demonstrates that the ion source of the present
invention supports the formation and preservation of clusters
during operation. The first grouping of signals 63, on the left of
the graph, are the hydrogen ions, with mass numbers 1 and 2. The
hydrogen peaks are relatively small, much smaller than the
phosphorus-containing peaks. The second grouping of signals 64
occurs between masses 31 and 35 and correspond to ions containing
one phosphorus atom. During a conventional implantation process,
one, several, or all of these peaks might be implanted, depending
upon the choice of mass-resolving aperture 27 (see FIG. 2)
selected. Some applications might require selection of only the
.sup.31P.sup.+ peak, if there is sensitivity to H in the process.
In this case, a narrow mass-resolving aperture can be implemented
to exclude the hydride peaks, i.e., PH.sub.x.sup.+, where x=1,2,3,
or 4. Other processes may require the implantation of all of the
peaks within this group to increase productivity. The next group of
signals to the right 65 consist of the phosphorus dimer P.sub.2;
each of these particles contains two phosphorus atoms. The leftmost
significant signal corresponds to P.sub.2.sup.+ with mass number
62. The neighboring signals to the right are those for
P.sub.2H.sub.x.sup.+, where x is between one and six. We also note
that the intensity of these signals is reduced in comparison to the
monomer peaks 64, but the observed intensity depends upon the
entire set of source input settings and can be optimized for a
desired beam condition, for example to maximize the relative height
of the P.sub.2.sup.+ peak if dimers are desired. The selection of
mass-resolving aperture determines how many of these beams would be
implanted during an implantation process. The next signal grouping
to the right 66 corresponds to the phosphorus cluster ions
containing three phosphorus atoms (P.sub.3.sup.+). The next signal
to the right 67 corresponds to the phosphorus cluster ions
containing four phosphorus atoms. It is interesting to note that
the intensity of this cluster is higher than for the
P.sub.3H.sub.x.sup.+ cluster, and that the net dose rate using the
P.sub.4.sup.+ cluster (4.times. the observed intensity) exceeds
that for implanting either P.sup.+ or P.sub.2.sup.+, and that the
energy per phosphorus atom implanted is only 1/4 of the nominal ion
beam energy.
[0070] FIG. 7 shows a mass spectrum of AsH.sub.3 using the present
invention. The ion beam energy was 19 keV, so that the effective As
implant energy of As.sub.4H.sub.x.sup.+ would be 4.75 keV. The beam
current of As.sub.4H.sub.x.sup.+ in FIG. 7 was about 0.25 mA, so
that the equivalent As dopant current is about 1 mA. FIG. 7 also
illustrates that particle currents between 0.5 mA and 1.0 mA would
result from implantation of As, As.sub.2, As.sub.3, or
As.sub.4-containing ion beams, also giving an effective implant
energy range of between about 20 and 5 keV, by simply adjusting the
analyzer magnet current to select different parts of the spectrum
of FIG. 7.
[0071] FIG. 8 shows As.sub.4H.sub.x.sup.+ current as a function of
As implant energy. The angular divergence of the ion beam was
limited by apertures between the mass resolving aperture (e.g., see
27 of FIG. 3) and Faraday cup to a half-angle in the lateral or
dispersive direction of 11 mR, or about 0.6 deg. 1 keV/atom is a
lower limit of what semiconductor process will require for arsenic
implantation into USJ devices.
[0072] FIG. 9 illustrates the beam currents of FIG. 8 converted to
units of beam brightness, and comparison to a "typical" modem-day
medium-current implanter. The improvement is about a factor of 30
(the medium-current implanter specifications we assumed were: 40
mrad half-angular acceptance, and 200 uA of beam current at 10
keV). Stephens, in Handbook of Ion Implantation Technology, J. F.
Ziegler, ed., North-Holland, pp. 455-499 (1992), define brightness
B at as:
B=2I/n.sup.2.epsilon..sup.2 (.mu.A-mm.sup.-2-mrad.sup.-2), (6)
[0073] where I is the effective dopant beam current in
microamperes, and .epsilon. is the beam emittance in square
(milliradians-millimeters). Emittance is calculated by
.epsilon.=.delta..alpha., (7)
[0074] where .delta. is the beam half-width in the dispersive
plane, and .alpha. is the half-pencil angle, both measured at the
image plane, i.e., at the resolving aperture location.
[0075] Beam brightness is an important figure of merit which
quantifies how much beam current can be transmitted into a certain
acceptance, for example through a tube of a certain diameter and
length. Since ion implanter beam lines have well-defined
acceptances, brightness is an important measure of productivity for
emittance-limited beams. Emittance is usually the limiting factor
in the transport of low-energy beams. We note that this is largely
the benefit of using cluster ions versus monomer ions, as expressed
in Equation (1)-(3). For As.sub.4 implantation, Eq. (3) predicts a
throughput increase of sixteen, i.e., .DELTA.=n.sup.2.
[0076] FIG. 10 shows Secondary Ion Mass Spectroscopy (SIMS) results
for silicon samples implanted with AsH.sub.x.sup.+ and
As.sub.4H.sub.x.sup.+ ions at 4.75 keV and 19 keV, respectively.
Atomic doses were approximately 1.times.10.sup.16 cm.sup.-2. These
data are compared with a full dynamical scattering model, TRIM,
which is commonly used in the industry to simulate ion implantation
into silicon. The results indicate that we are indeed implanting As
and As.sub.4 at the designated energies.
[0077] FIG. 11 shows a mass spectrum of diborane, B.sub.2H.sub.6, a
gaseous material not commonly used in conventional ion
implantation, but commercially available. FIG. 11 shows groupings
of H (H.sup.+, H.sub.2.sup.+, H.sub.3.sup.+), B (B, BH.sup.+,
BH.sub.2.sup.+), B.sub.2 (B.sub.2.sup.+, B.sub.2H.sup.+,
B.sub.2H.sub.2.sup.+, B.sub.2H.sub.3.sup.+, B.sub.2H.sub.4.sup.+),
B.sub.3 (B.sub.3, B.sub.3H.sup.+, B.sub.3H.sub.2.sup.+,
B.sub.3H.sub.3.sup.+, B.sub.3H.sub.4.sup.+), B.sub.4 (B4,
B.sub.4H.sup.+, B.sub.4H.sub.2.sup.+, B.sub.4H.sub.3.sup.+,
B.sub.4H.sub.4.sup.+), and a B.sub.5 group. The spectrum of FIG. 11
is somewhat complicated in it's interpretation because there are
two naturally-occuring isotopes of boron present, .sup.10B and
.sup.11B, which are represented in about a 4:1 ratio of .sup.11B to
.sup.10B, reflecting their natural abundances. For example, both
.sup.11B and .sup.10BH are present in the peak at 11 amu.
[0078] FIG. 12 demonstrates the creation of boron hydride clusters
and positive cluster ions in the present invention. This mass
spectrum shows data taken during of operation of the ion source of
the present invention, using vaporized decaborane B.sub.10H.sub.14
as the source feed material. Boron hydride clusters of the form
B.sub.yH.sub.x.sup.+ with 1.ltoreq.y.ltoreq.10 and
0.ltoreq.x.ltoreq.14 are shown, separated by 1 amu from 1 amu to
about 124 amu. The largest signal observed, B.sub.10H.sub.x.sup.+,
corresponds to decaborane molecular ions, which are formed by
direct ionization of the decaborane parent molecule.
[0079] FIG. 13 shows a negative ion spectrum of decaborane produced
by the ion source of the present invention, analogous to the
spectrum of FIG. 12. Far fewer ion states are formed by negative
decaborane ions, so the majority (about 90%) of the ions are
contained within the parent B.sub.10H.sub.x.sup.- peak. The use of
negative ions for ion implantation of semiconductors is very
beneficial since it virtually eliminates the wafer charging
observed with positive ion implantation. It is unusual for an ion
source to produce abundant quantities of both positive and negative
ions of a given material; the peak ion currents of FIGS. 12 and 13
are the same within a factor of two. This is shown dramatically in
FIG. 14 for an extended mass range. These data were collected as
shown by collecting a positive-ion mass spectrum, reversing the
polarities of the ion implanter power supplies, and collecting a
negative ion spectrum over the same mass range, on the same sheet
of paper, with the ion implantation system of the present
invention. The Faraday cup currents were fed to an x-y paper
recorder in order to collect FIG. 14. Significant advantages are
evident in implanting negative ions rather than positive ions in
the case of decaborane: 1) more useful ion current is within the
peak of interest, resulting in greater useful dopant flux; 2) the
parent peak is narrower in mass by almost a factor of two (a full
width at half-maximum of five amu for the negative ions versus nine
amu for the positive ions), and 3) the elimination of wafer
charging, as is generally accepted in the art, when negative ions
are substituted for positive ions.
[0080] FIG. 15 shows SIMS profiles for both positive and negative
decaborane ions implanted into silicon samples at a decaborane
energy of 20 keV. The profiles are nearly identical, as one would
expect if each ion possessed the same number of boron atoms, and
thus are implanted to the same projected range.
[0081] FIG. 16 shows SIMS data for a negative decaborane implant,
showing also H concentration. The H dose was 0.9 times the boron
dose, which suggests an average chemical formula for negative
decaborane of B.sub.10H.sub.9.sup.-.
[0082] There are several elements of interest for use in the
formation of shallow junctions in semiconductors. For silicon
applications, the primary dopants are boron, phosphorus, arsenic
and antimony, so these elements have the largest potential
application to the formation of shallow junctions. Further, silicon
and germanium implants are used to form amorphous regions in
silicon, so clusters of these elements would be useful for the
formation of shallow amorphous regions. For compound
semiconductors, elements of interest for shallow junctions include
silicon, germanium, tin, zinc, cadmium and beryllium, so clusters
of these elements have opportunity in the formation of shallow
junctions in compound semiconductor manufacturing.
[0083] One aspect of this method is providing the proper
environment within the ionization chamber for the formation of
cluster ions. Each of the various elements discussed has different
chemical properties and so the optimal environment is different for
each element. Each element and each selected cluster will require a
different set of the input parameters to achieve optimal
performance. The parameters available for optimization include: the
source pressure as controlled by the flow of feed material, the
temperature inside the ionization chamber as controlled by the
temperature control system, the ionization energy intensity and
characteristics, such as the electron beam current and electron
energy when the ionization energy is an electron beam. These basic
parameters work together to create the appropriate environment
within the source ionization chamber for the formation and
ionization of the dopant clusters.
[0084] As has been described above, the ion implantation of
clusters of dopant atoms makes it possible to implant both n-type
and p-type dopants at a shallow depth with high efficiency, as
compared to the ion implantation of single dopant atoms.
[0085] The present invention has been described, along with several
embodiments. The present invention is not limited thereto. For
example, it will be apparent to those skilled in the art that
various modifications, alterations, improvements and combination
thereof are possible. Obviously, many modifications and variations
of the present invention are possible in light of the above
teachings. Thus, it is to be understood that, within the scope of
the appended claims, the invention may be practiced otherwise than
as specifically described above.
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