U.S. patent application number 10/387958 was filed with the patent office on 2003-12-04 for electrochemical fabrication method and apparatus for producing three-dimensional structures having improved surface finish.
This patent application is currently assigned to MEMGen Corporation. Invention is credited to Cohen, Adam L., Smalley, Dennis R..
Application Number | 20030221968 10/387958 |
Document ID | / |
Family ID | 29587650 |
Filed Date | 2003-12-04 |
United States Patent
Application |
20030221968 |
Kind Code |
A1 |
Cohen, Adam L. ; et
al. |
December 4, 2003 |
Electrochemical fabrication method and apparatus for producing
three-dimensional structures having improved surface finish
Abstract
An electrochemical fabrication process produces
three-dimensional structures (e.g. components or devices) from a
plurality of layers of deposited materials wherein the formation of
at least some portions of some layers are produced by operations
that remove material or condition selected surfaces of a deposited
material. In some embodiments, removal or conditioning operations
are varied between layers or between different portions of a layer
such that different surface qualities are obtained. In other
embodiments varying surface quality may be obtained without varying
removal or conditioning operations but instead by relying on
differential interaction between removal or conditioning operations
and different materials encountered by these operations.
Inventors: |
Cohen, Adam L.; (Los
Angeles, CA) ; Smalley, Dennis R.; (Newhall,
CA) |
Correspondence
Address: |
MEMGen Corporation
1103 W. Isabel St.
Burbank
CA
91506
US
|
Assignee: |
MEMGen Corporation
|
Family ID: |
29587650 |
Appl. No.: |
10/387958 |
Filed: |
March 13, 2003 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
60364261 |
Mar 13, 2002 |
|
|
|
60379130 |
May 7, 2002 |
|
|
|
Current U.S.
Class: |
205/118 ;
204/224M; 204/224R; 205/221; 205/222 |
Current CPC
Class: |
B81C 2201/019 20130101;
C23F 1/00 20130101; C25D 5/02 20130101; C25D 1/003 20130101; B81C
1/00373 20130101; H01P 11/003 20130101 |
Class at
Publication: |
205/118 ;
204/224.00R; 204/224.00M; 205/221; 205/222 |
International
Class: |
C25D 005/02; C25D
017/00 |
Claims
We claim:
1. An electrochemical fabrication process for producing a
three-dimensional structure from a plurality of adhered layers, the
process comprising: (A) supplying a plurality of preformed masks,
wherein each mask comprises a patterned conformable dielectric
material that includes at least one opening through which
deposition can take place during the formation of at least a
portion of a layer, and wherein each mask comprises a support
structure that supports the patterned conformable dielectric
material; (B) selectively depositing at least a portion of a layer
onto the substrate, wherein the substrate may comprise previously
deposited material; (C) forming a plurality of layers such that
each successive layer is formed adjacent to and adhered to a
previously deposited layer, wherein said forming comprises
repeating operation (B) a plurality of times; wherein at least a
plurality of the selective depositing operations comprise (1)
contacting the substrate and the conformable material of a selected
preformed mask; (2) in presence of a plating solution, conducting
an electric current through the at least one opening in the
selected mask between an anode and the substrate, wherein the anode
comprises a selected deposition material, and wherein the substrate
functions as a cathode, such that the selected deposition material
is deposited onto the substrate to form at least a portion of a
layer; and (3) separating the selected preformed mask from the
substrate; and (D) removing material deposited on at least one
layer using a first removal process that comprises one or more
operations having one or more parameters; and (E) removing material
deposited on at least one different layer using a second removal
process that comprises one or more operations having one or more
parameters, wherein the first removal process differs from the
second removal process by inclusion of at least one different
operation or at least one different parameter.
2. The process of claim 1 wherein the first and second removal
processes comprise lapping operations, and wherein one of the
removal processes comprises a lapping operation that uses a finer
abrasive than that used by the other removal process.
3. The process of claim 1 wherein the first and second removal
processes comprise lapping operations, and wherein one of the
removal processes comprises one or more additional lapping
operations than does the other removal process.
4. The process of claim 1 wherein one of the first or second
removal processes comprises a finer removal process than the other
removal process.
5. The process of claim 4 wherein the finer removal process results
in a surface with mirror-like optical properties.
6. The process of claim 4 wherein the finer removal process is used
after deposition of material for a final layer of the
structure.
7. The process of claim 4 wherein the finer removal process is used
after deposition of material for an intermediate layer of the
structure.
8. The process of claim 5 wherein the mirror-like properties exist
on a surface of the structure that undergoes a removal process.
9. The process of claim 5 wherein the mirror-like properties exist
on a surface of the structure that did not undergo a removal
process but instead acquired the mirror-like properties as a result
of deposition of material onto a mirror-like surface.
10. The process of claim 1 wherein the formation of a plurality of
layers includes the deposition of at least a second material.
11. The process of claim 10 wherein the second material is a
structural material and the selected deposition material is a
sacrificial material
12. The process of claim 1 wherein at least one of the first and
second removal processes comprises CMP.
13. The process of claim 1 wherein at least one of the first or
second removal processes comprise multiple lapping operations where
at least two different abrasives are used.
14. The process of claim 13 wherein use of a rougher abrasive on a
given layer is followed by use of a finer abrasive.
15. The process of claim 13 wherein use of a finer abrasive is
followed by use of a rougher abrasive
16. The process of claim 15 wherein finer abrasive is used for a
longer time than the rougher abrasive.
17. The process of claim 1 wherein depositions associated with at
least one or more layers are subjected to a third removal process
that is different from both the first and second removal
processes.
18. The process of claim 1 wherein the conformable material
comprises an elastomeric material.
19. The process of claim 11 wherein at least one of the removal
processes involves use of a selective etchant that attacks either
the sacrificial material or the structural material but not
both.
20. The process of claim 1 wherein at least one of the removal
processes involves use of an electropolishing process.
21. An electrochemical fabrication apparatus for producing a
three-dimensional structure from a plurality of adhered layers, the
apparatus comprising: (A) a plurality of preformed masks, wherein
each mask comprises a patterned conformable dielectric material
that includes at least one opening through which deposition can
take place during the formation of at least a portion of a layer,
and wherein each mask comprises a support structure that supports
the patterned conformable dielectric material; (B) means for
selectively depositing at least a portion of a layer onto the
substrate, wherein the substrate may comprise previously deposited
material; and (C) means for forming a plurality of layers such that
each successive layer is formed adjacent to and adhered to a
previously deposited layer, wherein said forming comprises
repeating operation (B)a plurality of times; wherein the means for
selectively depositing comprises (1) means for contacting the
substrate and the conformable material of a selected preformed
mask; (2) means for conducting, in presence of a plating solution,
an electric current through the at least one opening in the
selected mask between an anode and the substrate, wherein the anode
comprises a selected deposition material, and wherein the substrate
functions as a cathode, such that the selected deposition material
is deposited onto the substrate to form at least a portion of a
layer; and (3) means for separating the selected preformed mask
from the substrate; and (D) means for removing material deposited
on at least one layer using a first removal process that comprises
one or more operations having one or more parameters; and (E) means
for removing material deposited on at least one different layer
using a second removal process that comprises one or more
operations having one or more parameters, wherein the first removal
process differs from the second removal process by inclusion of at
least one different operation or at least one different
parameter.
22. An electrochemical fabrication process for producing a
three-dimensional structure from a plurality of adhered layers, the
process comprising: (A) forming at least a portion of a layer by
either selectively depositing a material, to form portion of a
layer, onto a substrate or by selectively etching into a previously
deposited material that occupies at least a portion of a layer and
then depositing a material into an opening formed by the selective
etching, wherein the substrate may comprise previously deposited
layers of material; (B) forming a plurality of layers such that
subsequent layers are formed adjacent to and adhered to previously
deposited layers; (C) finishing a surface of at least a portion of
one or more materials deposited on at least one layer using a first
process that comprises one or more operations having one or more
parameters; and (E) finishing a surface of at least a portion of
one or more materials deposited on at least one different layer
using a second process that comprises one or more operations having
one or more parameters, wherein the first process differs from the
second process by inclusion of at least one different operation,
removal of at least one operation, or use of at least one different
parameter value.
23. The process of claim 22 wherein a determination of a finishing
operation or parameter for finishing at least one layer or of the
at least one different layer is at least in part determined from a
relationship between portions of one layer and portions of an
adjacent layer.
24. The process of claim 22 wherein a mask is used to define at
least one opening which exposes a surface that is to undergo a
selected finishing operation and where unexposed portions of the
surface define a portion of the surface that is not to undergo the
selected finishing operation.
25. The process of claim 23 wherein the relationship involves a
determination of whether portions of a structural material are
outward facing.
26. The process of claim 25 wherein the outward facing portion is
up-facing and a build orientation comprises forming subsequent
layers above previously formed layers.
27. The process of claim 25 wherein the outward facing portion is
down-facing and a build orientation comprises forming subsequent
layers above previously formed layers.
28. The process of claim 25 wherein the outward facing portion is
up-facing and a build orientation comprises forming subsequent
layers below previously formed layers.
29. The process of claim 25 wherein the outward facing portion is
down-facing and a build orientation comprises forming subsequent
layers below previously formed layers.
30. An electrochemical fabrication process for producing a
three-dimensional structure from a plurality of adhered layers, the
process comprising: (A) forming at least a portion of a layer by
either selectively depositing a material, to form portion of a
layer, onto a substrate or by selectively etching into a previously
deposited material that occupies at least a portion of a layer and
then depositing a material into an opening formed by the selective
etching, wherein the substrate may comprise previously deposited
layers of material; (B) forming a plurality of layers such that
subsequent layers are formed adjacent to and adhered to previously
deposited layers; (C) finishing a surface of at least a portion of
one or more materials deposited on at least one layer using a first
process that comprises one or more operations having one or more
parameters; and (E) finishing a surface of at least a portion of
one or more materials deposited on the at least one layer using a
second process that comprises one or more operations having one or
more parameters, wherein the portions subject to the first and
second processes are not identical and wherein the first process
differs from the second process by inclusion of at least one
different operation, removal of at least one operation, or use of
at least one different parameter value.
31. The process of claim 30 wherein the first process acts upon a
portion of the at least one layer and the second process acts upon
a portion of the at least one layer that includes a region not
acted upon by the first process.
32. The process of claim 30 wherein the first process acts upon a
portion of the at least one layer and the second process acts upon
a portion of the at least one layer that is exclusive of the
portion acted upon by the first process.
33. The process of claim 30 a determination of which portion of the
at least one layer is to be undergo finishing using the first
process or using the second process is at least in part determined
from a relationship between portions of the at least one layer and
portions of an adjacent layer.
34. The process of claim 30 wherein a mask is used to define at
least one opening which exposes a surface that is to undergo a
selected finishing operation and where unexposed portions of the
surface define a portion of the surface that is not to undergo the
selected finishing operation.
35. The process of claim 31 wherein the relationship involves a
determination of whether portions of a structural material are
outward facing.
36. The process of claim 35 wherein the outward facing portion is
up-facing and a build orientation comprises forming subsequent
layers above previously formed layers.
37. The process of claim 35 wherein the outward facing portion is
down-facing and a build orientation comprises forming subsequent
layers above previously formed layers.
38. The process of claim 35 wherein the outward facing portion is
up-facing and a build orientation comprises forming subsequent
layers below previously formed layers.
39. The process of claim 35 wherein the outward facing portion is
down-facing and a build orientation comprises forming subsequent
layers below previously formed layers.
40. The process of claim 35 wherein the relationship involves a
determination of whether portions of a structural material continue
from one layer to a subsequent layer.
41. The process of claim 35 wherein the relationship involves a
determination of whether portions of a sacrificial material
continue from one layer to a subsequent layer.
Description
RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional
Patent Application No. 60/364,261 filed Mar. 13, 2002 and U.S.
Provisional Application No. 60/379,130, filed May 7, 2002 which are
hereby incorporated herein by reference as if set forth in full
herein.
FIELD OF THE INVENTION
[0002] The present invention relates generally to the formation of
three-dimensional structures (e.g. components or devices) using
electrochemical fabrication methods via a layer-by-layer build up
of deposited materials where at least some layers are subjected to
surface conditioning processes and wherein the surface conditioning
processes are varied to yield varying surface finishes between
different portions of a single layer or between different layers or
portions of different layers.
BACKGROUND
[0003] A technique for forming three-dimensional structures (e.g.
parts, components, devices, and the like) from a plurality of
adhered layers was invented by Adam L. Cohen and is known as
Electrochemical Fabrication as it uses various electrochemical
methods in the fabrication of three-dimensional structures. It is
being commercially pursued by MEMGen.TM. Corporation of Burbank,
Calif. under the name EFAB.TM. This technique was described in U.S.
Pat. No. 6,027,630, issued on Feb. 22, 2000. This electrochemical
deposition technique allows the selective deposition of a material
using a unique masking technique that involves the use of a mask
that includes patterned conformable material on a support structure
that is independent of the substrate onto which plating will occur.
When desiring to perform an electrodeposition using the mask, the
conformable portion of the mask is brought into contact with a
substrate while in the presence of a plating solution such that the
contact of the conformable portion of the mask to the substrate
inhibits deposition at selected locations. For convenience, these
masks might be generically called conformable contact masks; the
masking technique may be generically called a conformable contact
mask plating process. More specifically, in the terminology of
MEMGen.TM. Corporation of Burbank, Calif. such masks have come to
be known as INSTANT MASKS.TM. and the process known as INSTANT
MASKING.TM. or INSTANT MASK.TM. plating. Selective depositions
using conformable contact mask plating may be used to form single
layers of material or may be used to form multi-layer structures.
The teachings of the '630 patent are hereby incorporated herein by
reference as if set forth in full herein. Since the filing of the
patent application that led to the above noted patent, various
papers about conformable contact mask plating (i.e. INSTANT
MASKING) and electrochemical fabrication have been published:
[0004] 1. A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and
P. Will, "EFAB: Batch production of functional, fully-dense metal
parts with micro-scale features", Proc. 9th Solid Freeform
Fabrication, The University of Texas at Austin, p161, Aug.
1998.
[0005] 2. A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and
P. Will, "EFAB: Rapid, Low-Cost Desktop Micromachining of High
Aspect Ratio True 3-D MEMS", Proc. 12th IEEE Micro Electro
Mechanical Systems Workshop, IEEE, p244, Jan 1999.
[0006] 3. A. Cohen, "3-D Micromachining by Electrochemical
Fabrication", Micromachine Devices, March 1999.
[0007] 4. G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and
P. Will, "EFAB: Rapid Desktop Manufacturing of True 3-D
Microstructures", Proc. 2nd International Conference on Integrated
MicroNanotechnology for Space Applications, The Aerospace Co.,
Apr.1999.
[0008] 5. F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and
P. Will, "EFAB: High Aspect Ratio, Arbitrary 3-D Metal
Microstructures using a Low-Cost Automated Batch Process", 3rd
International Workshop on High Aspect Ratio MicroStructure
Technology (HARMST'99), June 1999.
[0009] 6. A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, and
P. Will, "EFAB: Low-Cost, Automated Electrochemical Batch
Fabrication of Arbitrary 3-D Microstructures", Micromachining and
Microfabrication Process Technology, SPIE 1999 Symposium on
Micromachining and Microfabrication, September 1999.
[0010] 7. F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and
P. Will, "EFAB: High Aspect Ratio, Arbitrary 3-D Metal
Microstructures using a Low-Cost Automated Batch Process", MEMS
Symposium, ASME 1999 International Mechanical Engineering Congress
and Exposition, November, 1999.
[0011] 8. A. Cohen, "Electrochemical Fabrication (EFABTM)", Chapter
19 of The MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press,
2002.
[0012] 9. "Microfabrication--Rapid Prototyping's Killer
Application", pages 1-5 of the Rapid Prototyping Report, CAD/CAM
Publishing, Inc., June 1999.
[0013] The disclosures of these nine publications are hereby
incorporated herein by reference as if set forth in full
herein.
[0014] The electrochemical deposition process may be carried out in
a number of different ways as set forth in the above patent and
publications. In one form, this process involves the execution of
three separate operations during the formation of each layer of the
structure that is to be formed:
[0015] 1. Selectively depositing at least one material by
electrodeposition upon one or more desired regions of a
substrate.
[0016] 2. Then, blanket depositing at least one additional material
by electrodeposition so that the additional deposit covers both the
regions that were previously selectively deposited onto, and the
regions of the substrate that did not receive any previously
applied selective depositions.
[0017] 3. Finally, planarizing the materials deposited during the
first and second operations to produce a smoothed surface of a
first layer of desired thickness having at least one region
containing the at least one material and at least one region
containing at least the one additional material.
[0018] After formation of the first layer, one or more additional
layers may be formed adjacent to the immediately preceding layer
and adhered to the smoothed surface of that preceding layer. These
additional layers are formed by repeating the first through third
operations one or more times wherein the formation of each
subsequent layer treats the previously formed layers and the
initial substrate as a new and thickening substrate.
[0019] Once the formation of all layers has been completed, at
least a portion of at least one of the materials deposited is
generally removed by an etching process to expose or release the
three-dimensional structure that was intended to be formed.
[0020] The preferred method of performing the selective
electrodeposition involved in the first operation is by conformable
contact mask plating. In this type of plating, one or more
conformable contact (CC) masks are first formed. The CC masks
include a support structure onto which a patterned conformable
dielectric material is adhered or formed. The conformable material
for each mask is shaped in accordance with a particular
cross-section of material to be plated. At least one CC mask is
needed for each unique cross-sectional pattern that is to be
plated.
[0021] The support for a CC mask is typically a plate-like
structure formed of a metal that is to be selectively electroplated
and from which material to be plated will be dissolved. In this
typical approach, the support will act as an anode in an
electroplating process. In an alternative approach, the support may
instead be a porous or otherwise perforated material through which
deposition material will pass during an electroplating operation on
its way from a distal anode to a deposition surface. In either
approach, it is possible for CC masks to share a common support,
i.e. the patterns of conformable dielectric material for plating
multiple layers of material may be located in different areas of a
single support structure. When a single support structure contains
multiple plating patterns, the entire structure is referred to as
the CC mask while the individual plating masks may be referred to
as "submasks". In the present application such a distinction will
be made only when relevant to a specific point being made.
[0022] In preparation for performing the selective deposition of
the first operation, the conformable portion of the CC mask is
placed in registration with and pressed against a selected portion
of the substrate (or onto a previously formed layer or onto a
previously deposited portion of a layer) on which deposition is to
occur. The pressing together of the CC mask and substrate occur in
such a way that all openings, in the conformable portions of the CC
mask contain plating solution. The conformable material of the CC
mask that contacts the substrate acts as a barrier to
electrodeposition while the openings in the CC mask that are filled
with electroplating solution act as pathways for transferring
material from an anode (e.g. the CC mask support) to the
non-contacted portions of the substrate (which act as a cathode
during the plating operation) when an appropriate potential and/or
current are supplied.
[0023] An example of a CC mask and CC mask plating are shown in
FIGS. 1(a)-1(c). FIG. 1(a) shows a side view of a CC mask 8
consisting of a conformable or deformable (e.g. elastomeric)
insulator 10 patterned on an anode 12. The anode has two functions.
FIG. 1(a) also depicts a substrate 6 separated from mask 8. One is
as a supporting material for the patterned insulator 10 to maintain
its integrity and alignment since the pattern may be topologically
complex (e.g., involving isolated "islands" of insulator material).
The other function is as an anode for the electroplating operation.
CC mask plating selectively deposits material 22 onto a substrate 6
by simply pressing the insulator against the substrate then
electrodepositing material through apertures 26a and 26b in the
insulator as shown in FIG. 1 (b). After deposition, the CC mask is
separated, preferably non-destructively, from the substrate 6 as
shown in FIG. 1(c). The CC mask plating process is distinct from a
"through-mask" plating process in that in a through-mask plating
process the separation of the masking material from the substrate
would occur destructively. As with through-mask plating, CC mask
plating deposits material selectively and simultaneously over the
entire layer. The plated region may consist of one or more isolated
plating regions where these isolated plating regions may belong to
a single structure that is being formed or may belong to multiple
structures that are being formed simultaneously. In CC mask plating
as individual masks are not intentionally destroyed in the removal
process, they may be usable in multiple plating operations.
[0024] Another example of a CC mask and CC mask plating is shown in
FIGS. 1(d)-1(f). FIG. 1(d) shows an anode 12' separated from a mask
8' that comprises a patterned conformable material 10' and a
support structure 20. FIG. 1(d) also depicts substrate 6 separated
from the mask 8'. FIG. 1(e) illustrates the mask 8' being brought
into contact with the substrate 6. FIG. 1(f) illustrates the
deposit 22' that results from conducting a current from the anode
12' to the substrate 6. FIG. 1(g) illustrates the deposit 22' on
substrate 6 after separation from mask 8'. In this example, an
appropriate electrolyte is located between the substrate 6 and the
anode 12' and a current of ions coming from one or both of the
solution and the anode are conducted through the opening in the
mask to the substrate where material is deposited. This type of
mask may be referred to as an anodeless INSTANT MASK.TM. (AIM) or
as an anodeless conformable contact (ACC) mask.
[0025] Unlike through-mask plating, CC mask plating allows CC masks
to be formed completely separate from the fabrication of the
substrate on which plating is to occur (e.g. separate from a
three-dimensional (3D) structure that is being formed). CC masks
may be formed in a variety of ways, for example, a
photolithographic process may be used. All masks can be generated
simultaneously, prior to structure fabrication rather than during
it. This separation makes possible a simple, low-cost, automated,
self-contained, and internally-clean "desktop factory" that can be
installed almost anywhere to fabricate 3D structures, leaving any
required clean room processes, such as photolithography to be
performed by service bureaus or the like.
[0026] An example of the electrochemical fabrication process
discussed above is illustrated in FIGS. 2(a)-2(f). These figures
show that the process involves deposition of a first material 2
which is a sacrificial material and a second material 4 which is a
structural material. The CC mask 8, in this example, includes a
patterned conformable material (e.g. an elastomeric dielectric
material) 10 and a support 12 which is made from deposition
material 2. The conformal portion of the CC mask is pressed against
substrate 6 with a plating solution 14 located within the openings
16 in the conformable material 10. An electric current, from power
supply 18, is then passed through the plating solution 14 via (a)
support 12 which doubles as an anode and (b) substrate 6 which
doubles as a cathode. FIG. 2(a), illustrates that the passing of
current causes material 2 within the plating solution and material
2 from the anode 12 to be selectively transferred to and plated on
the cathode 6. After electroplating the first deposition material 2
onto the substrate 6 using CC mask 8, the CC mask 8 is removed as
shown in FIG. 2(b). FIG. 2(c) depicts the second deposition
material 4 as having been blanket-deposited (i.e. non-selectively
deposited) over the previously deposited first deposition material
2 as well as over the other portions of the substrate 6. The
blanket deposition occurs by electroplating from an anode (not
shown), composed of the second material, through an appropriate
plating solution (not shown), and to the cathode/substrate 6. The
entire two-material layer is then planarized to achieve precise
thickness and flatness as shown in FIG. 2(d). After repetition of
this process for all layers, the multi-layer structure 20 formed of
the second material 4 (i.e. structural material) is embedded in
first material 2 (i.e. sacrificial material) as shown in FIG. 2(e).
The embedded structure is etched to yield the desired device, i.e.
structure 20, as shown in FIG. 2(f).
[0027] Various components of an exemplary manual electrochemical
fabrication system 32 are shown in FIGS. 3(a)-3(c). The system 32
consists of several subsystems 34, 36, 38, and 40. The substrate
holding subsystem 34 is depicted in the upper portions of each of
FIGS. 3(a) to 3(c) and includes several components: (1) a carrier
48, (2) a metal substrate 6 onto which the layers are deposited,
and (3) a linear slide 42 capable of moving the substrate 6 up and
down relative to the carrier 48 in response to drive force from
actuator 44. Subsystem 34 also includes an indicator 46 for
measuring differences in vertical position of the substrate which
may be used in setting or determining layer thicknesses and/or
deposition thicknesses. The subsystem 34 further includes feet 68
for carrier 48 which can be precisely mounted on subsystem 36.
[0028] The CC mask subsystem 36 shown in the lower portion of FIG.
3(a) includes several components: (1) a CC mask 8 that is actually
made up of a number of CC masks (i.e. submasks) that share a common
support/anode 12, (2) precision X-stage 54, (3) precision Y-stage
56, (4) frame 72 on which the feet 68 of subsystem 34 can mount,
and (5) a tank 58 for containing the electrolyte 16. Subsystems 34
and 36 also include appropriate electrical connections (not shown)
for connecting to an appropriate power source for driving the CC
masking process.
[0029] The blanket deposition subsystem 38 is shown in the lower
portion of FIG. 3(b) and includes several components: (1) an anode
62, (2) an electrolyte tank 64 for holding plating solution 66, and
(3) frame 74 on which the feet 68 of subsystem 34 may sit.
Subsystem 38 also includes appropriate electrical connections (not
shown) for connecting the anode to an appropriate power supply for
driving the blanket deposition process.
[0030] The planarization subsystem 40 is shown in the lower portion
of FIG. 3(c) and includes a lapping plate 52 and associated motion
and control systems (not shown) for planarizing the
depositions.
[0031] In addition to teaching the use of CC masks for
electrodeposition purposes, the '630 patent also teaches that the
CC masks may be placed against a substrate with the polarity of the
voltage reversed and material may thereby be selectively removed
from the substrate. It indicates that such removal processes can be
used to selectively etch, engrave, and polish a substrate, e.g., a
plaque.
[0032] The '630 patent provides various examples of useful
planarization methods. These examples include mechanical (e.g.,
diamond lapping and silicon carbide lapping), chemical-mechanical,
and non-mechanical (e.g., electrical discharge machining)
planarization processes.
[0033] Further teachings of the '630 patent indicate that diamond
lapping can be performed using a single grade of diamond abrasive,
e.g., about 1-6 micron, or diamond abrasives of various grades.
Lapping with different grades of abrasive can be performed using
separate lapping plates, or in different regions of a single plate.
For example, a coarse diamond abrasive can be applied to the outer
region of a spinning circular lapping plate, and a fine diamond
abrasive can be applied to the inner region. A removable circular
wall can be provided between the inner and outer regions to
increase segregation. The layer to be planarized first contacts the
outer region of the plate, is then optionally rinsed to remove
coarse abrasive, and then is moved to the inner region of the
plate. The planarized surface can then be rinsed using a solution,
e.g., water-based or electrolyte-based solution, to remove both
abrasive and abraded particles from the planarized layer. The
abrasive slurry preferably is easily removable, e.g.,
water-soluble. Layer thickness, planarity and smoothness can be
monitored, e.g., using an optical encoder, wear resistant stops,
and by mating the layer under a known pressure with a precision
flat metal plate and measuring the resistance across the
plate-layer junction.
[0034] The '630 patent further provides an examples of a preferred
planarization processes. One includes allowing the work piece,
i.e., the substrate having the layer to be planarized, to rotate
within a "conditioning ring" on the lapping plate. Another involves
lapping being performed by moving a workpiece around the surface of
a lapping plate using the X/Y motion stages of the electroplating
apparatus without rotating or releasing the workpiece.
[0035] A need remains for improved electrochemical fabrication
methods and apparatus that provided needed surface quality while
optimizing production time. A need also remains for improved
electrochemical fabrication methods and apparatus that provide
different surface quality for different regions of a structure that
is being formed.
SUMMARY OF THE INVENTION
[0036] It is an object of certain aspects of the invention to
provide an improved electrochemical fabrication process or
apparatus that provides needed surface quality without wasting
production time.
[0037] It is an object of certain aspects of the invention to
provide an improved electrochemical fabrication process or
apparatus that provides different surface qualities for different
regions of a structure.
[0038] Other objects and advantages of various aspects of the
invention will be apparent to those of skill in the art upon review
of the teachings herein. The various aspects of the invention, set
forth explicitly herein or otherwise ascertained from the teaching
herein, may address any one of the above objects alone or in
combination, or alternatively may not address any of the objects
set forth above but instead address some other object of the
invention ascertained from the teachings herein. It is not intended
that each of these objects be addressed by any single aspect of the
invention even though that may be the case with regard to some
aspects.
[0039] In a first aspect of the invention an electrochemical
fabrication process for producing a three-dimensional structure
from a plurality of adhered layers, includes (A) supplying a
plurality of preformed masks, wherein each mask includes a
patterned conformable dielectric material that includes at least
one opening through which deposition can take place during the
formation of at least a portion of a layer, and wherein each mask
includes a support structure that supports the patterned
conformable dielectric material; (B) selectively depositing at
least a portion of a layer onto the substrate, wherein the
substrate may include previously deposited material; (C) forming a
plurality of layers such that each successive layer is formed
adjacent to and adhered to a previously deposited layer, wherein
said forming includes repeating operation (B) a plurality of times;
wherein at least a plurality of the selective depositing operations
include (1) contacting the substrate and the conformable material
of a selected preformed mask; (2) in presence of a plating
solution, conducting an electric current through the at least one
opening in the selected mask between an anode and the substrate,
wherein the anode includes a selected deposition material, and
wherein the substrate functions as a cathode, such that the
selected deposition material is deposited onto the substrate to
form at least a portion of a layer; and (3) separating the selected
preformed mask from the substrate; and (D) removing material
deposited on at least one layer using a first removal process that
includes one or more operations having one or more parameters; and
(E) removing material deposited on at least one different layer
using a second removal process that includes one or more operations
having one or more parameters, wherein the first removal process
differs from the second removal process by inclusion of at least
one different operation or at least one different parameter.
[0040] In a second aspect of the invention an electrochemical
fabrication apparatus for producing a three-dimensional structure
from a plurality of adhered layers, includes (A) a plurality of
preformed masks, wherein each mask includes a patterned conformable
dielectric material that includes at least one opening through
which deposition can take place during the formation of at least a
portion of a layer, and wherein each mask includes a support
structure that supports the patterned conformable dielectric
material; (B) means for selectively depositing at least a portion
of a layer onto the substrate, wherein the substrate may include
previously deposited material; (C) means for forming a plurality of
layers such that each successive layer is formed adjacent to and
adhered to a previously deposited layer, wherein said forming
includes repeating operation (B)a plurality of times; wherein the
means for selectively depositing includes (1)means for contacting
the substrate and the conformable material of a selected preformed
mask; (2) means for conducting, in presence of a plating solution,
an electric current through the at least one opening in the
selected mask between an anode and the substrate, wherein the anode
includes a selected deposition material, and wherein the substrate
functions as a cathode, such that the selected deposition material
is deposited onto the substrate to form at least a portion of a
layer; and (3) means for separating the selected preformed mask
from the substrate; and (D) means for removing material deposited
on at least one layer using a first removal process that includes
one or more operations having one or more parameters; and (E) means
for removing material deposited on at least one different layer
using a second removal process that includes one or more operations
having one or more parameters, wherein the first removal process
differs from the second removal process by inclusion of at least
one different operation or at least one different parameter.
[0041] In a third aspect of the invention an electrochemical
fabrication process for producing a three-dimensional structure
from a plurality of adhered layers includes (A) selectively
depositing at least a portion of a layer onto a substrate, wherein
the substrate may include previously deposited material; (B)
forming a plurality of layers such that each successive layer is
formed adjacent to and adhered to a previously deposited layer; (C)
removing material deposited on at least one layer using a first
removal process that includes one or more operations having one or
more parameters; and (E) removing material deposited on at least
one different layer using a second removal process that includes
one or more operations having one or more parameters, wherein the
first removal process differs from the second removal process by
inclusion of at least one different operation or at least one
different parameter.
[0042] In a fourth aspect of the invention an electrochemical
fabrication process for producing a three-dimensional structure
from a plurality of adhered layers, the process including: (A)
forming at least a portion of a layer by either selectively
depositing a material, to form portion of a layer, onto a substrate
or by selectively etching into a previously deposited material that
occupies at least a portion of a layer and then depositing a
material into an opening formed by the selective etching, wherein
the substrate may include previously deposited layers of material;
(B) forming a plurality of layers such that subsequent layers are
formed adjacent to and adhered to previously deposited layers; (C)
finishing a surface of at least a portion of one or more materials
deposited on at least one layer using a first process that includes
one or more operations having one or more parameters; and (E)
finishing a surface of at least a portion of one or more materials
deposited on the at least one layer using a second process that
includes one or more operations having one or more parameters,
wherein the portions subject to the first and second processes are
not identical and wherein the first process differs from the second
process by inclusion of at least one different operation, removal
of at least one operation, or use of at least one different
parameter value.
[0043] In a fifth aspect of the invention an electrochemical
fabrication process for producing a three-dimensional structure
from a plurality of adhered layers, the process including: (A)
forming at least a portion of a layer by either selectively
depositing a material, to form portion of a layer, onto a substrate
or by selectively etching into a previously deposited material that
occupies at least a portion of a layer and then depositing a
material into an opening formed by the selective etching, wherein
the substrate may include previously deposited layers of material;
(B) forming a plurality of layers such that subsequent layers are
formed adjacent to and adhered to previously deposited layers; (C)
finishing a surface of at least a portion of one or more materials
deposited on at least one layer using a first process that includes
one or more operations having one or more parameters; and (E)
finishing a surface of at least a portion of one or more materials
deposited on at least one different layer using a second process
that includes one or more operations having one or more parameters,
wherein the first process differs from the second process by
inclusion of at least one different operation, removal of at least
one operation, or use of at least one different parameter
value.
[0044] Further aspects of the invention will be understood by those
of skill in the art upon reviewing the teachings herein. Other
aspects of the invention may involve combinations of the above
noted aspects of the invention. These other aspects of the
invention may provide various combinations of the aspects presented
above as well as provide other configurations, structures,
functional relationships, and processes that have not been
specifically set forth above.
[0045] In some embodiments, electrochemical fabrication processes
produce one or more three-dimensional structures (e.g. components
or devices) from a plurality of layers of deposited materials
wherein the formation of at least some portions of some layers are
produced by operations that remove material, redistribute,
condition, or otherwise finish selected surfaces of a deposited
material. In some embodiments, removal, redistribution,
conditioning, or finishing operations are varied between layers or
between different portions of a layer such that different surface
qualities are obtained. In other embodiments varying surface
quality may be obtained without varying selected removal,
redistribution or finishing operations or parameters but instead by
relying on differential interaction between removal or conditioning
operations and different materials encountered by these
operations.
[0046] In some embodiments a finishing process (e.g. removal or
conditioning process) on a 1st layer differs from a removal or
conditioning process on a 2nd layer. In some more focused
embodiments the finishing process used on a 1st layer includes an
operation not used in the finishing process used on a 2nd layer. In
some other more focused embodiments, the finishing process on a 2nd
layer includes an operation not used in the process on the 1st
layer. In some other embodiments the finishing process on the 1st
layer includes a parameter which is different from a parameter used
in the process on the 2nd layer.
[0047] In some embodiments a finishing process (e.g. removal or
conditioning process) used on a 1st portion of a layer differs from
the finishing process used on a 2nd portion of the layer. In some
more focused embodiments, the finishing process used on the 1st
portion includes an operation not used in the finishing process
used on the 2nd portion. In some more focused embodiments, the
finishing process used on the 2nd portion includes an operation not
used in the finishing process used on the 1st portion. In some
other embodiments, the finishing process used on the 1st portion
includes a parameter which is different from a parameter used in
the finishing process used on the 2nd portion.
[0048] In some embodiments a selected finishing process (e.g.
removal or conditioning process) is used only a portion of a layer.
In some more focused embodiments the process is limited to
operating on one or more selected materials. In some more focused
embodiments the process is limited to operating on one or more
selected portions of one or more selected materials. In some other
more focused embodiments, the process is limited so as not to
operate on one or more selected portions of one or more selected
materials. In some additional embodiments a mask having a pattern
of openings corresponding to a pattern of a selected material
forming a portion of the layer is use to define surface on which
the process will operate. In some further embodiments a mask having
a pattern of openings corresponding to non-outward facing surface
of a selected material forming a portion of the layer is used to
define the surface on which the process will operate
BRIEF DESCRIPTION OF THE DRAWINGS
[0049] FIGS. 1(a)-1(c) schematically depict a side view of various
stages of a CC mask plating process, while FIGS. 1(d)-(g) depict a
side view of various stages of a CC mask plating process using a
different type of CC mask.
[0050] FIGS. 2(a)-2(f) schematically depict side views of various
stages of an electrochemical fabrication process as applied to the
formation of a particular structure where a sacrificial material is
selectively deposited while a structural material is blanket
deposited.
[0051] FIGS. 3(a)-3(c) schematically depict side views of various
example subassemblies that may be used in manually implementing the
electrochemical fabrication method depicted in FIGS. 2(a)-2(f).
[0052] FIGS. 4(a)-4(g) depict the formation of a 1st layer of a
structure using through mask plating where the blanket deposition
of a second material overlays both the openings between deposition
locations of a 1st material and the first material itself.
[0053] FIG. 5 depicts a flowchart of the generalized process of the
instant invention.
[0054] FIGS. 6(a) and 6(b) depict a CAD design of a scanning
micro-mirror and an electrochemically fabricated structure
according to that design, respectively.
[0055] FIGS. 7(a)-7(h) set forth a side view of a six layer
structure as well as top views of each layer of that structure.
[0056] FIGS. 8(a)-8(h) illustrate a side view and top views of the
structure of FIGS. 7(a)-7(h) where each of the four distinct
regions for each layer are illustrated.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0057] FIGS. 1(a)-1(g), 2(a)-2(f), and 3(a)-3(c) illustrate various
features of Electrochemical Fabrication that are known. Other
electrochemical fabrication techniques are set forth in the '630
patent referenced above, in the various previously incorporated
publications, in patent applications incorporated herein by
reference, still others may be derived from combinations of various
approaches described in these publications, patents, and
applications, or are otherwise known or ascertainable by those of
skill in the art. All of these techniques may be combined with
those of the present invention to yield enhanced embodiments.
[0058] FIGS. 4(a)-4(f) illustrate various stages in the formation
of a single layer of a multi-layer fabrication process where a
second metal is deposited on a first metal as well as in openings
in the first metal where its deposition forms part of the layer. In
FIG. 4(a), a side view of a substrate 82 is shown, onto which
patternable photoresist 84 is cast as shown in FIG. 4(b). In FIG.
4(c), a pattern of resist is shown that results from the curing,
exposing, and developing of the resist. The patterning of the
photoresist 84 results in openings or apertures 92(a)-92(c)
extending from a surface 86 of the photoresist through the
thickness of the photoresist to surface 88 of the substrate 82. In
FIG. 4(d), a metal 94 (e.g. nickel) is shown as having been
electroplated into the openings 92(a)-92(c). In FIG. 4(e), the
photoresist has been removed (i.e. chemically stripped) from the
substrate to expose regions of the substrate 82 which are not
covered with the first metal 94. In FIG. 4(f), a second metal 96
(e.g., silver) is shown as having been blanket electroplated over
the entire exposed portions of the substrate 82 (which is
conductive) and over the first metal 94 (which is also conductive).
FIG. 4(g) depicts the completed first layer of the structure which
has resulted from the planarization of the first and second metals
down to a height that exposes the first metal.
[0059] In some preferred embodiments of the invention
electrochemical fabrication processes or apparatus are provided
that include enhanced removal or finishing processes and apparatus.
In particular the enhanced removal or finishing processes involve
use of one or more different removal of finishing operations and/or
one or more different removal or finishing parameters on at least
two different layers. The use of one process may allow faster, or
otherwise preferred, removal of finishing operations to occur for
selected layers (e.g. when surface quality is not critical) while a
slower process may be used, or an otherwise less preferred removal
or finishing process, when surface quality is more critical. Thus,
the use of different definable removal processes allows process
optimization to occur.
[0060] In other embodiments different finishing operations may be
used on different parts of a single layer or on different layers
simply to obtain a desired difference in surface finish regardless
of the overall processing time.
[0061] A flow chart depicting the general electrochemical
fabrication process for some embodiments of the invention is
depicted in FIG. 4. Element 102 depicts the beginning of the
process while element 104 sets the layer number variable "i", to a
value of one. Decision block 106 inquires as to whether or not the
layer number variable "i" has exceeded the total number of layers
"N" in the structure being formed. If so the process ends with
element 8. Assuming the variable "I" has not exceeded the total
number of layers "N", element 112 sets the deposition number
variable "j" for layer "i" to a value of one. Element 114 calls for
the deposition of the material associated with deposition number
"j" for layer "i". Element 116 increments the deposition number by
one. Element 118 inquires as to whether or not the deposition
number exceeds the maximum number of depositions "M" associated
with layer "i". If not, the process loops back to element 114 and
the next deposition for layer "i" is performed. If "yes", the
process moves forward to element 122 where the finishing process
(e.g. removal, redistribution, or conditioning process) operation
variable "k" is set to a value of 1. Next the process moves to
element 124 where the finishing process "k" is performed for layer
"i". The finishing process "k" associated with any given layer "i"
may or may not exist. If it exists it may involve an identical
operation or parameters that were used on other layers, it may
involve a different operation from that used on one or more layers,
or it may involve a similar operation used on other layers but with
different associated parameters. After performance of removal
process "k` for layer "i", the process proceeds to element 126
where an inquiry is made as to whether or not the value of "k"
exceeds the maximum number of finishing operations "P" associated
with layer "i". If it does not, "k" is incremented by one and the
process loops back to element 124 for performing the next removal
operation for layer "i". If "k" does equal "P", the layer value "i"
is incremented by 1 as indicated by element 132 and the process
loops back to element 106. The value of "N", the value of "M" for
each layer "i", the value of "P" for each layer "i", the deposition
processes associated with variable "j" for each layer "i", and the
finishing processes (i.e. operations and parameters) associated
with variable "k" for each layer "i" can be held in the mind of an
operator when a manual fabrication process is being used or they
may be set in a look up table, determined or specified via a
calculation, or otherwise determined and specified for use by an
automated apparatus.
[0062] In some preferred embodiments of the present invention
either the value of variable "k" is different between at least two
layers and/or the operations or parameters associated with a given
value of "k" for at least two different layers are different.
[0063] For example on one layer where surface finish is not
critical, a single relatively course abrasive may be used in a
single lapping process to remove material and planarize the layer
whereas on a different layer two or more lapping processes may be
used where progressively finer abrasives may be used to yield a
smoother surface than would be obtained in the single removal
operation. In an alternative process, a single lapping operation
may be used on two different layers but one of the layers may
additionally involve a buffing process or a polishing process such
as CMP. In a further alternative, lapping or CMP may be used on two
different layers but the parameters under which the operations
operate may be changed.
[0064] In certain embodiments it may be desirable to use a finer
abrasive to bring the layer to a desired level and then use a
courser abrasive for a short period of time to roughen the surface
without significantly changing its effective surface level. More
generally, in some circumstances operations and parameters may be
chosen so that certain layers are provided with a higher degree of
smoothness while in other circumstances, operations and parameters
are chosen to provide a course surface without significantly
causing the level or height of the material to deviate from a
desired level or height.
[0065] If a mirror like surface were desired for a given layer,
more time or cost could be spent on the finishing operation (e.g.
planarization operation and polishing operation) for that specific
layer while allowing all other layers to undergo a faster or
otherwise more acceptable process. The layer or layers that undergo
a more rigorous, difficult, costly, or time consuming removal
process may include the last layer of the structure, an initial
layer of the structure, or may be limited to one or more
intermediate layers.
[0066] If at least two different materials are being used in the
deposition process, e.g. at least one sacrificial material and at
least one structural material, then surface quality may be imparted
either directly or indirectly by the finishing process. If the
desired surface (i.e. the surface that is to have the desired
attributes) is one that is being operated on by the removal process
(e.g. planarized), the removal process imparts the quality to the
surface directly and if the surface is associated with layer "i"
then the removal operations are performed on layer "i". If on the
other hand, the desired surface is not one that is being
planarized, then the quality of it is being imparted from the
surface on which it was formed or will be formed. In this latter
case, if the surface for which the particular quality is being
sought is associated with layer "i" then it is layer "i-1"that must
receive the specialized removal process. In other words if a
structure is being formed by stacking layers one on top of the
other, it is the up-facing surface of each layer that undergoes
removal, it is the upper surfaces that obtain their surface
qualities directly form the removal operations whereas the
down-facing surfaces pick up their surface qualities as a result of
the surface quality that was achieved on the previously formed
layer. If the layers are being added below previously formed layers
then rolls of the up-facing and down-facing surfaces are
reversed.
[0067] In other embodiments, finishing may be performed at least in
part using etchants that may be substantially non-selective with
respect to their ability to etch materials being used in the
formation of the structure or they may offer a significant level of
selectivity for enhanced etching of one material relative to
another. In still other embodiments electrochemical etching or
polishing may be used during some or all finishing operations. In
still other embodiments, finishing operations may involve a
combined use of one or more of etchants, mechanical operations
grinding or polishing operations, application of electrical
currents or potentials, and the like.
[0068] The CAD design of a scanning micro-mirror device that can
benefit from various embodiments of the invention is depicted in
FIG. 6(a) while a mirror formed from that CAD file using
electrochemical fabrication is shown in FIG. 6(b). The quality of
the formed mirror and particularly the surface quality of the upper
surface of the reflective portion 200 of the mirror may benefit
from the enhanced fabrication techniques of various embodiments of
the present invention. In these embodiments, the layer containing
the upper surface of the mirror may undergo polishing operations
which are not performed on other layers of the structure which can
produce a mirror of desired reflectivity while not hindering the
overall build process with such a high level of polishing on each
layer.
[0069] In some embodiments, the selective application of
specialized surface finishing may provide not only smoother
surfaces when desired but also rougher surfaces or surfaces with
other qualities when appropriate. For example, in some applications
adhesion between successive layers may be enhanced by roughening
the surface prior to deposition of the structural material
associated with the next layer. In still other embodiments,
significantly roughing or otherwise treating the surface may
decrease undesired spectral reflections from that surface. For
example in FIG. 6(b) it may be desirable to roughen or otherwise
treat surfaces 202, 204, 206, 208, 210 and 212 to decrease such
reflections. If one or more of these additional surfaces exist on
the same layer where other finishing processes are desired (such as
for surfaces 200, 204, 206, 208 and 210) it may be necessary to
selectively performed the two or more finishing processes
independent of one another. Alternatively, it may be possible to
perform a first finishing process in a blanket manner with the
subsequent processes formed in selective manners where the result
of the first finishing process is simply the starting point for the
subsequent operations. Of course, those of skill in the art will
understand that other levels of processing selectivity or
processing order are possible. For example, if a first selectively
applied finishing process creates a great disparity between surface
finishes of two distinct regions then a common blanket finishing
operation may be used which still leaves a desired level of
disparity between relevant attributes of the distinct regions. As a
further example, after an initial planarization operation bring a
given layer to a desired level and to a desired surface finish, a
thin blank deposition or selective deposition of a desired coating
material may be made, after which additional selective or blanket
finishing operations may be used to take the entire surface or a
portion of the surface to a final finished state.
[0070] In some embodiments it may be desirable to select, or
tailor, the surface finish associated with a given portion of a
layer depending on how that portion relates to the presence or lack
of presence of structural material in the same area on a subsequent
layer that is to be formed. In other embodiments, similar
consideration of sacrificial materials may be used.
[0071] In some embodiments a single structural material will be
used and that structural material will typically overlay at least
in part, structural material deposited on a previous layer or
structural material to be deposited on a subsequent layer. In these
embodiments, structural material on each portion of a layer may be
classified into one of four categories: (1) up facing, (2) down
facing, (3) both up facing and down facing, and (4) continuing. An
up facing portion of structural material on a given layer is that
portion of the structural material that is not bounded by
structural material that is associated with the next higher layer
level. A down facing region of structural material on a given layer
is that portion of the structural material that is not bounded from
below by structural material located on the layer that is located
immediately below the given layer. A portion of structural material
defined as both up facing and down facing is not bounded from above
or bounded from below by structural material that exists on the
next higher layer or on the next lower layer. Finally, a portion of
structural material located on a given layer that is bounded from
below and bounded from above by structural material on the
immediately preceding and exceeding layers is a continuing
region.
[0072] In other embodiments layers need not be stacked along a
vertical axis and thus these terms could either be defined for a
different build orientation or alternatively they may simply be
reinterpreted in an appropriate way. In embodiments where more than
one structural material is used and/or more than one sacrificial
material is used, additional or alternative distinct regions may be
defined as necessary. In still other embodiments where sensitivity
to certain structural features is critical, alternative or added
regions may be defined. In still other embodiments where boundary
effects between distinct regions, or other issues, make it
desirable to define regions which are slightly larger or smaller
than what is ascertainable from layer to layer comparisons alone,
offset boundaries may be defined using erosion techniques or
expansion techniques
[0073] FIGS. 7(a)-7(h) set forth a side view of a six layer
structure as well as top views of each layer of that structure.
FIGS. 7(a) depicts a side view of a six layer structure that
includes layer portions that are definable in each of the four
distinct categories noted above. For simplicity sake, the structure
is assumed to be formed by stacking layers on top of one another
starting with the first layer 301 formed on top of a substrate 300
followed by layers 302 to 306. Each layer comprises a portion that
is formed of structural material 314 and a portion formed from a
sacrificial material 316. A top view of the substrate 300 is shown
is FIG. 7(b). The regions of structural material on layer 301 are
shown in FIG. 7(c) relative to an outline 310 of the substrate.
FIGS. 7(d)-7(h) show structural material associated with layers 302
to 306, respectively, relative to an outline 310 of substrate
300.
[0074] FIGS. 8(a)-8(h) illustrate a side view and top views of the
structure of FIGS. 7(a)-7(h) where each of the four distinct
regions for each layer are illustrated. FIG. 8(a) shows that a
structure 308 is formed on a substrate 300 from layers 301 to
layers 306. FIG. 8(a) also indicates that different portions of
each layer can be classified into the different regions discussed
above (where like regions are designated with like fill patterns).
It can be seen that continuing regions 322 exist on some layers,
regions that are both up facing and down facing 324 exist on some
layers, regions that are down facing only 326 exist on some layers,
and regions that are up facing only 328 exist on some layers. FIGS.
8(b)-8(h) illustrate top views of the substrate and each of layers
301 through 306, respectively, where distinct regions 322, 324,
326, and 328 are shown with fill patterns similar to those
illustrated in FIG. 8(a).
[0075] The recognition of distinct portions (or regions) of layers
may be used in tailoring finishing processes that may be used in
achieving desired surface finishes for each portion of each layer.
In some alternative embodiments, if desired, sacrificial material
may also receive similar designations which may be used for
determining additional or alternative surface finishing processes
that may be used.
[0076] Once the distinct regions of each layer are determined, an
associated desired surface quality parameter may be associated with
each region. From the combined surface quality parameters
associated with each layer appropriate surface finishing or
treatment processes may be proposed and an order for performance
proposed. From an analysis of the proposed processes and order,
conflicts may be determined and either removed by process or order
modifications or alternatively by deciding to use fall back or
compromise finishing processes.
[0077] In some embodiments where structures will be formed by
stacking layers one above the other, it may be appropriate to
associate portions of a next layer (n+1) that are down-facing with
the previous layer (n) so that appropriate finishing operations may
be used on at least portions of the sacrificial material so that
those portions have appropriate surface finish after forming the
previous layer (n) which will be used in setting the surface
quality of the down-facing features of structural material on the
next layer (n+1). In embodiments with other build orientations
(e.g. subsequent layers formed below previously formed layers)
other appropriate association may be made.
[0078] As an example of how different surface finishes may be
applied to a single layer one may consider layer 304 of FIG. 8(f).
In this layer it may be seen that a portion of the structural
material is continuing 322 and a portion is up-facing 328 or 324.
If it is desired that up facing surfaces have a relatively smooth
surface finish and that non-up-facing regions may have an
alternative surface finish (e.g. one which is formed faster or one
which is intentionally roughened up to, for example, enhance
adhesion between layers), the entire layer may be planarized or
polished to the extent desired to obtain the surface finish to be
associated with up-facing features (assuming any exist on the layer
being considered) then a contact mask or other mask may be placed
against the resulting surface. The solid portions of the mask may
be pressed against the portion of the surface(s) that are to retain
the desired "up-facing" finish and the openings in the mask may be
located over those portions of the surface(s) that are intended to
have a different finish (e.g. rougher finish). The exposed
surface(s) may be treated with an appropriate chemical etch,
electrochemical etch, reactive or inactive material bombardment,
radiation bombardment, or the like which is intended to produce the
desired surface finish. After processing the mask may be removed.
The operations to produce the surface finish may or may not
significantly change the level of the exposed surface.
[0079] In other embodiments where a third distinct surface finish
is desired a further mask of selected configuration may be placed
on or contacted to the surface leaving openings in the regions to
be treated. The selective treatment may be applied after which the
mask may be removed. In still other embodiments surface treatments
that are performed may include deposition operations or
redistribution operations (e.g. alternate etchings and depositions)
as opposed to, or in addition to, the removal operations.
[0080] The method embodiments of the present invention may be
implemented manually or via an automated or semi-automated
apparatus. The apparatus used for either manual or automated
execution of the method will involve appropriate deposition
stations (e.g. one or more selective deposition stations, one or
more blanket deposition stations, one or more removal stations set
up or modifiable to implement the specific type of removal
operations to be performed, capability to monitor deposit height or
level during removal operations or between removal operations.
Various apparatus configurations are within the skill of the art
based on the teachings herein. A number of alternatives are
disclosed in the previously referenced and incorporated '630
patent.
[0081] Preferred apparatus for implementing the present invention
will involve one or more programmed computers that control the
process flow and associated operations and parameters. In some
embodiments, preferred apparatus will may include, one or more
deposition or etching stations for electrodepositing material (e.g.
via electroplating), one or more cleaning or activation stations,
one or more inspection stations, and one or more layer finishing
stations.
[0082] Various other embodiments of the present invention exist.
Some of these embodiments may be based on a combination of the
teachings herein with various teachings incorporated herein by
reference. Some embodiments may not use any blanket deposition
process. Some embodiments may involve the selective deposition of a
plurality of different materials on a single layer or on different
layers. Some embodiments may use blanket depositions processes that
are not electrodeposition processes. Some embodiments may use
selective deposition processes on some layers that are not
conformable contact masking processes and are not even
electrodeposition processes. Some embodiments may use nickel as a
structural material while other embodiments may use different
materials such as gold, silver, or any other electrodepositable
materials that can be separated from a sacrificial material such as
copper. Some embodiments may use copper as the structural material
with or without a sacrificial material. Some embodiments may remove
a sacrificial material while other embodiments may not. In some
embodiments the anode may be different from the conformable contact
mask support and the support may be a porous structure or other
perforated structure. Some embodiments may use multiple conformable
contact masks with different patterns so as to deposit different
selective patterns of material on different layers and/or on
different portions of a single layer. In some embodiments, the
depth of deposition will be enhanced by pulling the conformable
contact mask away from the substrate as deposition is occurring in
a manner that allows the seal between the conformable portion of
the CC mask and the substrate to shift from the face of the
conformal material to the inside edges of the conformable material.
In some embodiments, manual or automated visual inspection of a
deposits or planarized surfaces may occur.
1 US Application No. Title Filing Date Brief Description US App.
No. 09/488,142 Method for Electrochemical Fabrication Jan. 20, 2000
This application is a divisional of the application that led to the
above noted `630 patent. This application describes the basics of
conformable contact mask plating and electrochemical fabrication
including various alternative methods and apparatus for practicing
EFAB as well as various methods and apparatus for constructing
conformable contact masks US App. No. 09/755,985 Microcombustor and
Combustion-Based Thermoelectric Microgenerator Jan. 5, 2001
Describes a generally toroidal counterflow heat exchanger and
electric current microgenerator that can be formed using
electrochemical fabrication. US App. No. 60/329,654 "Innovative
Low-Cost Manufacturing Technology for High Aspect Ratio Oct. 15,
2001 Microelectromechanical Systems (MEMS)" A conformable contact
masking technique where the depth of deposition is enhanced by
pulling the mask away from the substrate as deposition is occurring
in such away that the seal between the conformable portion of the
mask and the substrate shifts from the face of the conformal
material and the opposing face of the substrate to the inside edges
of the conformable material and the deposited material. US App. No.
60/364,261 Electrochemical Fabrication Method and Apparatus for
Producing Three-Dimensional Mar. 13, 2002 Structures Having
Improved Surface Finish An electrochemical fabrication (EFAB)
process and apparatus are provided that remove material deposited
on at least one layer using a first removal process that includes
one or more operations having one or more parameters, and remove
material deposited on at least one different layer using a second
removal process that includes one or more operations having one or
more parameters, wherein the first removal process differs from the
second removal process by inclusion of at least one different
operation or at least one different parameter. US App. No.
60/379,136 Selective Electrochemical Deposition Methods Having
Enhanced Uniform Deposition May 7, 2002 Capabilities Describes
conformable contact mask processes for forming selective
depositions of copper using a copper pyrophosphate plating solution
that allows simultaneous deposition to at least one large area
(greater than about 1.44 mm.sup.2) and at least one small area
(smaller than about 0.05 mm.sup.2) wherein the thickness of
deposition to the smaller area is no less than one-half the
deposition thickness to the large area when the deposition to the
large area is no less than about 10 .mu.m in thickness and where
the copper pyrophosphate solution contains at least 30 g/L of
copper. The conformable contact mask process is particularly
focused on an electrochemical fabrication process for producing
three-dimensional structures from a plurality of adhered layers. US
App. No. 60/379,131 Selective Electrode position Using Conformable
Contact Masks Having Enhanced May 7, 2002 Longevity Describes
conformable contact masks that include a support structure and a
patterned elastomeric material and treating the support structure
with a corrosion inhibitor prior to combining the support and the
patterned elastomeric material to improve the useful life of the
mask. Also describes operating the plating bath at a low
temperature so as to extend the life of the mask. US App. No.
60/379,132 Methods and Apparatus for Monitoring Deposition Quality
During Conformable Contact May 7, 2002 Mask Plating Operations
Describes an electrochemical fabrication process and apparatus that
includes monitoring of at least one electrical parameter (e.g.
voltage) during selective deposition using conformable contact
masks where the monitored parameter is used to help determine the
quality of the deposition that was made. If the monitored parameter
indicates that a problem occurred with the deposition, various
remedial operations are undertaken to allow successful formation of
the structure to be completed. US App. No. 60/379,129 Conformable
Contact Masking Methods and Apparatus Utilizing In Situ Cathodic
May 7, 2002 Activation of a Substrate An electrochemical
fabrication process benefiting from an in situ cathodic activation
of nickel is provided where prior to nickel deposition, the
substrate is exposed to the desired nickel plating solution and a
current less than that capable of causing deposition is applied
through the plating solution to the substrate (i.e. cathode) to
cause activation of the substrate, after which, without removing
the substrate from the plating bath, the current is increased to a
level which causes deposition to occur. US App. No. 60/379,134
Electrochemical Fabrication Methods With Enhanced Post Deposition
Processing May 7, 2002 An electrochemical fabrication process for
producing three-dimensional structures from a plurality of adhered
layers is provided where each layer includes at least one
structural material (e.g. nickel) and at least one sacrificial
material (i.e. copper) that will be etched away from the structural
material after the formation of all layers have been completed. A
copper etchant containing chlorite (e.g. Enthone C-38) is combined
with a corrosion inhibitor (e.g. sodium nitrate) to prevent pitting
of the structural material during removal of the sacrificial
material. US App. No. 60/379,130 Methods and Apparatus for
Electrochemically Fabricating Structures Via Selective May 7, 2002
Etching and Filling of Voids Multilayer structures are
electrochemically fabricated using a deposition of a first
material, a selective etching of the first deposited material, e.g.
via conformable contact masking, and then a deposition of a second
material to fill in the voids created by the etching of the first
material and then followed by a planarization operation. The first
and second depositions may be blanket depositions or selective
depositions (e.g. via conformable contact masking). The repetition
of the formation process for forming successive layers may be
repeated without variation or with variation (e.g. varying
patterns; varying the number of depositions, etchings, and or
planarization operations; varying the order of operations, varying
the materials deposited, even eliminating the selective etching
operations on some layers. US App. No. 60/379,133 Method of and
Apparatus for Forming Three-Dimensional Structures Integral With
May 7, 2002 Semiconductor Based Circuitry An electrochemical
fabrication (e.g. by EFAB .TM.) process and apparatus are provided
that can form three-dimensional multi-layer structures using
semiconductor based circuitry as a substrate. Electrically
functional portions of the structure are formed from structural
material (e.g. nickel) that adheres to contact pads of the circuit.
Aluminum contact pads and silicon structures are protected from
copper diffusion damage by application of appropriate barrier
layers. In some embodiments, nickel is applied to the aluminum
contact pad via solder bump formation techniques using electroless
nickel plating. US App. No. 60/379,176 Selective Electrochemical
Deposition Methods Using Pyrophosphate Copper Plating May 7, 2002
Baths Containing Citrate Salts An electrochemical fabrication (e.g.
by EFAB .TM.) process and apparatus are provided that can form
three -dimensional multi-layer structures using pyrophosphate
copper plating solutions that contain a citrate salt. In preferred
embodiments the citrate salts are provided in concentrations that
yield improved anode dissolution, reduced formation of pinholes on
the surface of deposits, reduced likelihood of shorting between
anode and cathode during deposition processes, and reduced plating
voltage throughout the period of deposition. A preferred citrate
salt is ammonium citrate in concentrations ranging from somewhat
more that about 10 g/L for 10 mA/cm.sup.2 current density to as
high as 200 g/L or more for a current density as high as 40
mA/cm.sup.2. US App. No. 60/379,135 Methods of and Apparatus for
Molding Structures Using Sacrificial Metal Patterns May 7, 2002
Molded structures, methods of and apparatus for producing the
molded structures are provided. At least a portion of the surface
features for the molds are formed from multilayer electrochemically
fabricated structures (e.g. fabricated by the EFAB .TM. formation
process), and typically contain features having resolutions within
the 1 to 100 .mu.m range. The layered structure is combined with
other mold components, as necessary, and a molding material is
injected into the mold and hardened. The layered structure is
removed (e.g. by etching) along with any other mold components to
yield the molded article. In some embodiments portions of the
layered structure remain in the molded article and in other
embodiments an additional molding material is added after a partial
or complete removal of the layered structure. US App. No.
60/379,177 Electrochemically Fabricated Structures Having
Dielectric Bases and Methods of and May 7, 2002 Apparatus for
Producing Such Structures Multilayer structures are
electrochemically fabricated (e.g. by EFAB .TM.) on a temporary
conductive substrate and are there after are bonded to a permanent
dielectric substrate and removed from the temporary substrate. The
structures are formed from top layer to bottom layer, such that the
bottom layer of the structure becomes adhered to the permanent
substrate. The permanent substrate may be a solid sheet that is
bonded (e.g. by an adhesive) to the layered structure or the
permanent substrate may be a flowable material that is solidified
adjacent to or partially surrounding a portion of the structure
with bonding occurs during solidification. The multilayer structure
may be released from a sacrificial material prior to attaching the
permanent substrate or more preferably it may be released after
attachment. US App. No. 60/379,182 Electrochemically Fabricated
Hermetically Sealed Microstructures and Methods of and May 7, 2002
Apparatus for Producing Such Structures Multilayer structures are
electrochemically fabricated (e.g. by EFAB .TM.) from at least one
structural material (e.g. nickel), at least one sacrificial
material (e.g. copper), and at least one sealing material (e.g.
solder). The layered structure is made to have a desired
configuration which is at least partially and immediately
surrounded by sacrificial material which is in turn surrounded
almost entirely by structural material. The surrounding structural
material includes openings in the surface through which etchant can
attack and remove trapped sacrificial material found within.
Sealing material is located near the openings. After removal of the
sacrificial material, the box is evacuated or filled with a desired
gas or liquid. Thereafter, the sealing material is made to flow,
seal the openings, and resolidify. US App. No. 60/379,184 Multistep
Release Method for Electrochemically Fabricated Structures May 7,
2002 Multilayer structures are electrochemically fabricated (e.g.
by EFAB .TM.) from at least one structural material (e.g. nickel),
that is configured to define a desired structure and which may be
attached to a support structure, and at least a first sacrificial
material (e.g. copper) that surrounds the desired structure, and at
least one more material which surrounds the first sacrificial
material and which will function as a second sacrificial material.
The second sacrificial material is removed by an etchant and/or
process that does not attack the first sacrificial material.
Intermediate post processing activities may occur, and then the
first sacrificial material is removed by an etchant or process that
does not attack the at least one structural material to complete
the release of the desired structure. US App. No. 60/392,531
Miniature RF and Microwave Components and Methods for Fabricating
Such June 27, 2002 Components RF and microwave radiation directing
or controlling components are provided that are monolithic, that
are formed from a plurality of electrodeposition operations, that
are formed from a plurality of deposited layers of material, that
include inductive and capacitive stubs or spokes that short a
central conductor of a coaxial component to the an outer conductor
of the component, that include non-radiation-entry and
non-radiation-exit channels that are useful in separating
sacrificial materials from structural materials and that are
useful, and/or that include surface ripples on the inside surfaces
of some radiation flow passages. Preferred formation processes use
electrochemical fabrication techniques (e.g. including selective
depositions, bulk depositions, etching operations and planarization
operations) and post-deposition processes (e.g. selective etching
operations and/or back filling operations). US App. No. 60/415,374
Monolithic Structures Including Alignment and/or Retention Fixtures
Oct. 1. 2002 for Accepting Components Permanent or temporary
alignment and/or retention structures for receiving multiple
components are provided. The structures are preferably formed
monolithically via a plurality of deposition operations (e.g.
electrodeposition operations). The structures typically include two
or more positioning fixtures that control or aid in the positioning
of components relative to one another, such features may include
(1) positioning guides or stops that fix or at least partially
limit the positioning of components in one or more orientations or
directions, (2) retention elements that hold positioned components
in desired orientations or locations, and (3) positioning and/or
retention elements that receive and hold adjustment modules into
which components can be fixed and which in turn can be used for
fine adjustments of position and/or orientation of the components.
US App. No. 10/271,574 Methods of and Apparatus for Making High
Aspect Ratio Microelectromechanical Oct. 15, 2002 Structures
Various embodiments of the invention present techniques for forming
structures (e.g. HARMS-type structures) via an electrochemical
extrusion (ELEX .TM.) process. Preferred embodiments perform the
extrusion processes via depositions through anodeless conformable
contact masks that are initially pressed against substrates that
are then progressively pulled away or separated as the depositions
thicken. A pattern of deposition may vary over the course of
deposition by including more complex relative motion between the
mask and the substrate elements. Such complex motion may include
rotational components or translational motions having components
that are not parallel to an axis of separation. More complex
structures may be formed by combining the ELEX .TM. process with
the selective deposition, blanket deposition, planarization,
etching, and multi-layer operations of EFAB .TM. US App. No.
60/422,008 EFAB Methods and Apparatus Including Spray Metal Coating
Processes Oct. 29, 2002 Various embodiments of the invention
present techniques for forming structures via a combined
electrochemical fabrication process and a thermal spraying process.
In a first set of embodiments, selective deposition occurs via
conformable contact masking processes and thermal spraying is used
in blanket deposition processes to fill in voids left by selective
deposition processes. In a second set of embodiments, selective
deposition via a conformable contact masking is used to lay down a
first material in a pattern that is similar to a net pattern that
is to be occupied by a sprayed metal. In these other embodiments a
second material is blanket deposited to fill in the voids left in
the first pattern, the two depositions are planarized to a common
level that may be somewhat greater than a desired layer thickness,
the first material is removed (e.g. by etching), and a third
material is sprayed into the voids left by the etching operation.
The resulting depositions in both the first and second sets of
embodiments are planarized to a desired layer thickness in
preparation for adding additional layers to form three-dimensional
structures from a
plurality of adhered layers. In other embodiments, additional
materials may be used and different processes may be used. US App.
No. 60/422,007 Medical Devices and EFAB Methods and Apparatus for
Producing Them Oct. 29, 2002 Various embodiments of the invention
present miniature medical devices that may be formed totally or in
part using electrochemical fabrication techniques. Sample medical
devices include micro-tweezers or forceps, internally expandable
stents, bifurcated or side branch stents, drug eluting stents,
micro-valves and pumps, rotary ablation devices, electrical
ablation devices (e.g. RF devices), micro-staplers, ultrasound
catheters, and fluid filters. In some embodiments devices may be
made out of a metal material while in other embodiments they may be
made from a material (e.g. a polymer) that is molded from an
electrochemically fabricated mold. Structural materials may include
gold, platinum, silver, stainless steel, titanium or pyrolytic
carbon-coated materials such as nickel, copper, and the like. US
App. No. 60/422,982 Sensors and Actuators and Methods and Apparatus
for Producing Them Nov. 1, 2002 Various embodiments of the
invention present sensors or actuators that include a plurality of
capacitor (i.e. conductive) plates that can interact with one
another to change an electrical parameter that may be correlated to
a physical parameter such as pressure, movement, temperature, or
the like or that may be driven may an electrical signal to cause
physical movement. In some embodiments the sensors or actuators are
formed at least in part via electrochemical fabrication (e.g.
EFAB). US App. No. 60/429,483 Multi-cell Masks and Methods and
Apparatus for Using Such Masks To Form Three- Nov. 26, 2002.
Dimensional Structures Multilayer structures are electrochemically
fabricated via depositions of one or more materials in a plurality
of overlaying and adhered layers. Selectivity of deposition is
obtained via a multi-cell controllable mask. Alternatively, net
selective deposition is obtained via a blanket deposition and a
selective removal of material via a multi-cell mask. Individual
cells of the mask may contain electrodes comprising depositable
material or electrodes capable of receiving etched material from a
substrate. Alternatively, individual cells may include passages
that allow or inhibit ion flow between a substrate and an external
electrode and that include electrodes or other control elements
that can be used to selectively allow or inhibit ion flow and thus
inhibit significant deposition or etching. US App. No. 60/429,484
Non-Conformable Masks and Methods and Apparatus for Forming
Three-Dimensional Nov. 26, 2002. Structures Electrochemical
Fabrication may be used to form multilayer structures (e.g.
devices) from a plurality of overlaying and adhered layers. Masks,
that are independent of a substrate to be operated on, are
generally used to achieve selective patterning. These masks may
allow selective deposition of material onto the substrate or they
may allow selective etching of a substrate where after the created
voids may be filled with a selected material that may be planarized
to yield in effect a selective deposition of the selected material.
The mask may be used in a contact mode or in a proximity mode. In
the contact mode the mask and substrate physically mate to form
substantially independent process pockets. In the proximity mode,
the mask and substrate are positioned sufficiently close to allow
formation of reasonably independent process pockets. In some
embodiments, masks may have conformable contact surfaces (i.e.
surfaces with sufficient deformability that they can substantially
conform to surface of the substrate to form a seal with it) or they
may have semi-rigid or even rigid surfaces. Post deposition etching
operations may be performed to remove flash deposits (thin
undesired deposits). US App. No. 10/309,521 Miniature RF and
Microwave Components and Methods for Fabricating Such Dec. 3. 2002.
Components RF and microwave radiation directing or controlling
components are provided that may be monolithic, that may be formed
from a plurality of electrodeposition operations and/or from a
plurality of deposited layers of material, that may include
switches, inductors, antennae, transmission lines, filters, and/or
other active or passive components. Components may include
non-radiation-entry and non-radiation-exit channels that are useful
in separating sacrificial materials from structural materials.
Preferred formation processes use electrochemical fabrication
techniques (e.g. including selective depositions, bulk depositions,
etching operations and planarization operations) and
post-deposition processes (e.g. selective etching operations and/or
back filling operations). US App. No. 60/430,809 Electrochemically
Fabricated Hermetically Sealed Microstructures and Methods of and
Dec. 3, 2002. Apparatus for Producing Such Structures Multilayer
structures are electrochemically fabricated (e.g. by EFAB .TM.)
from at least one structural material (e.g. nickel), at least one
sacrificial material (e.g. copper), and at least one sealing
material (e.g. solder). The layered structure is made to have a
desired configuration which is at least partially and immediately
surrounded by sacrificial material which is in turn surrounded
almost entirely by structural material. The surrounding structural
material includes openings in the surface through which etchant can
attack and remove trapped sacrificial material found within.
Sealing material is located near the openings. After removal of the
sacrificial material, the box is evacuated or filled with a desired
gas or liquid. Thereafter, the sealing material is made to flow,
seal the openings, and resolidify. US App. No. 10/313,795 Complex
Microdevices and Apparatus and Methods for Fabricating Such Devices
Dec. 6, 2002. Various embodiments of the invention are directed to
various microdevices including sensors, actuators, valves, scanning
mirrors, accelerometers, switches, and the like. In some
embodiments the devices are formed via electrochemical fabrication
(EFAB .TM.). US App No. 60/435,324 EFAB Methods and Apparatus
Including Spray Metal or Powder Coating Processes Dec. 20, 2002
Various embodiments of the invention present techniques for forming
structures via a combined electrochemical fabrication process and a
thermal spraying process or powder deposition processes. In a first
set of embodiments, selective deposition occurs via conformable
contact masking processes and thermal spraying or powder deposition
is used in blanket deposition processes to fill in voids left by
selective deposition processes. In a second set of embodiments,
selective deposition via a conformable contact masking is used to
lay down a first material in a pattern that is similar to a net
pattern that is to be occupied by a sprayed metal. In these other
embodiments a second material is blanket deposited to fill in the
voids left in the first pattern, the two depositions are planarized
to a common level that may be somewhat greater than a desired layer
thickness, the first material is removed (e.g. by etching), and a
third material is sprayed into the voids left by the etching
operation. The resulting depositions in both the first and second
sets of embodiments are planarized to a desired layer thickness in
preparation for adding additional layers to form three-dimensional
structures from a plurality of adhered layers. In other
embodiments, additional materials and selective depositions other
than conformable contact masking processes may be used. US App. No.
60/442, 166 Silicone Compositions, Methods of Making, and Uses
Thereof Jan. 22, 2003 Silicone based compositions having enhanced
UV absorption are provided. US App. No. 60/442,656
Electrochemically Fabricated Structures Having Dielectric or Active
Bases and Methods Jan. 23, 2003. of and Apparatus for Producing
Such Structures Multilayer structures are electrochemically
fabricated (e.g. by EFAB .TM.) on a temporary conductive substrate
and are there after are bonded to a permanent dielectric substrate
and removed from the temporary substrate. The structures are formed
from top layer to bottom layer, such that the bottom layer of the
structure becomes adhered to the permanent substrate. The permanent
substrate may be a solid sheet that is bonded (e.g. by an adhesive)
to the layered structure or the permanent substrate may be a
flowable material that is solidified adjacent to or partially
surrounding a portion of the structure with bonding occurs during
solidification. The multilayer structure may be released from a
sacrificial material prior to attaching the permanent substrate or
more preferably it may be released after attachment.
[0083] Various other embodiments of the present invention exist.
Some of these embodiments may be based on a combination of the
teachings herein with various teachings incorporated herein by
reference. Some embodiments may not use any blanket deposition
process. Some embodiments may involve the selective deposition of a
plurality of different materials on a single layer or on different
layers. Some embodiments may use blanket depositions processes that
are not electrodeposition processes. Some embodiments may use
selective deposition processes that are not conformable contact
masking processes (on some or on all layers) and are not even
electrodeposition processes. Some embodiments may replace selective
deposition processes with a combination of one or more selective
etching operations and one or more blanket deposition operations.
Some embodiments may use nickel as a structural material while
other embodiments may use different materials such as gold, silver,
or any other electrodepositable materials (or even
non-electrodepositable material) that can be separated from a
selected (e.g. copper) sacrificial material or materials. Some
embodiments may use copper as the structural material with or
without a sacrificial material. Some embodiments may remove a
sacrificial material while other embodiments may not. In some
embodiments an anode may be different from the conformable contact
mask support and the support may be a porous structure or other
perforated structure. Some embodiments may use multiple conformable
contact masks with different patterns so as to deposit different
selective patterns of material on different layers and/or on
different portions of a single layer. In some embodiments,
non-conformable contact masks may be used or masks that are formed
on and temporarily adhered to the substrate may be used. In some
embodiments, the depth of deposition will be enhanced by pulling
the conformable contact mask away from the substrate as deposition
is occurring in a manner that allows the seal between the
conformable portion of the CC mask and the substrate to shift from
the face of the conformal material to the inside edges of the
conformable material.
[0084] In view of the teachings herein, many further embodiments,
alternatives in design and uses of the instant invention will be
apparent to those of skill in the art. As such, it is not intended
that the invention be limited to the particular illustrative
embodiments, alternatives, and uses described above but instead
that it be solely limited by the claims presented hereafter.
* * * * *