U.S. patent application number 10/447917 was filed with the patent office on 2003-12-04 for vapor deposition device.
This patent application is currently assigned to Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Yamazaki, Shunpei.
Application Number | 20030221620 10/447917 |
Document ID | / |
Family ID | 29561638 |
Filed Date | 2003-12-04 |
United States Patent
Application |
20030221620 |
Kind Code |
A1 |
Yamazaki, Shunpei |
December 4, 2003 |
Vapor deposition device
Abstract
The present invention provides a vapor deposition device
suitable for multiface cutting by using a large area board, having
a high efficiency of utilizing an EL material and excellent in
uniformity of a film, wherein a board 13 and a vapor deposition
mask 14 are mounted above board holding means 12, an interval
between a vapor deposition source holder 17 and an object to be
deposited (board 13) is narrowed to be equal to or smaller than 30
cm, preferably, equal to or smaller than 20 cm, further preferably,
5 through 15 cm and in vapor deposition, the vapor deposition
source holder 17 is moved in the X direction or Y direction in
accordance with an insulating member (referred to also as bank,
partition wall) 10 and a shutter 15 is opened and closed to thereby
form a film.
Inventors: |
Yamazaki, Shunpei; (Tokyo,
JP) |
Correspondence
Address: |
COOK, ALEX, McFARRON, MANZO,
CUMMINGS & MEHLER, LTD.
SUITE 2850
200 WEST ADAMS STREET
CHICAGO
IL
60606
US
|
Assignee: |
Semiconductor Energy Laboratory
Co., Ltd.
|
Family ID: |
29561638 |
Appl. No.: |
10/447917 |
Filed: |
May 29, 2003 |
Current U.S.
Class: |
118/722 ;
118/724; 118/729 |
Current CPC
Class: |
H01L 51/56 20130101;
C23C 14/56 20130101; C23C 14/246 20130101; C23C 14/042 20130101;
H01L 51/001 20130101; C23C 14/24 20130101; H01L 51/0013
20130101 |
Class at
Publication: |
118/722 ;
118/724; 118/729 |
International
Class: |
C23C 016/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 3, 2002 |
JP |
2002-161335 |
Claims
What is claimed is:
1. A vapor deposition device which forms a film over a board by
vapor-depositing an organic compound material from a vapor
deposition source holder arranged to be opposed to the board, the
vapor deposition device comprising: a film forming chamber arranged
with the board; means for moving the vapor deposition source
holder, wherein the film forming chamber arranged with the board
includes board holding means and means for moving the vapor
deposition source holder, and the vapor deposition source holder
includes a vessel filled with a vapor deposition material, means
for heating the vessel and a shutter provided over the vessel,
wherein the means for moving the vapor deposition source holder has
a function of moving the vapor deposition source holder by a
certain pitch in the X axis direction and moving the vapor
deposition source holder in the Y axis direction by a certain
pitch, and the board holding means is arranged between the board
and the vapor deposition holder.
2. A device according to claim 1, wherein the board holding means
overlap with a region for constituting a terminal portion, a
cutting region or an end portion of the board, with a mask
interposed therebetween.
3. A device according to claim 1, wherein the board holding means
includes a projection and supports the board or the mask at a top
point of the projection.
4. A vapor deposition device which forms a film over a board by
vapor-depositing an organic compound material from a vapor
deposition holder arranged to be opposed to the board, the vapor
deposition device comprising: a film forming chamber arranged with
the board; means for moving the vapor deposition source holder,
wherein the film forming chamber arranged with the board includes
board holding means and means for moving the vapor deposition
source holder, and the vapor deposition source holder includes a
vessel filled with a vapor deposition material and means for
heating the vessel and a shutter provided over the vessel, the
means for moving the vapor deposition source holder has a function
of moving the vapor deposition source holder in the X axis
direction by a certain pitch and moving the vapor deposition source
holder in the Y axis direction by a certain pitch, the board
holding means is arranged between the board and the vapor
deposition holder, and the film forming chamber is connected to a
vacuum processing chamber for vacuuming inside of the film forming
chamber and generates a plasma in the film forming chamber.
5. A device according to claim 4, wherein the board holding means
comprises a conductive material and the board holding means is
connected with a high frequency power source.
6. A device according to claim 4, wherein the board holding means
overlaps with a region for constituting a terminal portion, a
cutting region or an end portion of the board, with a mask
interposed therebetween.
7. A device according to claim 4, wherein the board holding means
includes a projection and the board or the mask is supported by a
top point of the projection.
8. A device according to claim 1, wherein the board holding means
includes a projection and a height of the projection falls in a
range of 1 m through 30 .mu.m.
9. A device according to claim 4, wherein the board holding means
includes a projection and a height of the projection falls in a
range of 1 .mu.m through 30 .mu.m.
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates to a deposition system for
depositing materials which can be deposited by evaporation
(hereinafter, an evaporation material), and a manufacturing method
of a luminescent device typified by an organic light emitting
element that is formed using the deposition system. Specifically,
the present invention relates to a vacuum-evaporation method and an
evaporation system that conducts deposition by evaporating an
evaporation material from a plurality of evaporation sources
provided to face a substrate.
RELATED ART
[0002] In recent years, research related to a luminescent device
having an EL element as a self-luminous light emitting element has
been activated. The luminescent device is referred to as organic EL
display (OELD) or organic light emitting diode (OLED). Since these
luminescent devices have characteristics such as rapid speed of
response that is suitable for movie display, low voltage, low power
consumption driving, or the like, they attracts an attention for a
next generation display including new generation's cellular phones
and portable information terminals (PDA).
[0003] The EL element has a structure that an organic
compound-containing layer (hereinafter, an EL layer) is sandwiched
between an anode and a cathode. Electro luminescence is generated
in the EL layer by applying an electronic field to the anode and
the cathode. Luminescence obtained from the EL element includes
light emission in returning to a base state from singlet excitation
(fluorescence) and light emission in returning to a base state from
triplet excitation (phosphorescence).
[0004] Such luminescent device having the EL elements arranged in
matrix shape can employ passive matrix driving (simple matrix
luminescent devices) and active matrix driving (active matrix
luminescent devices) or other driving methods. However, if the
pixel density is increased, the active matrix luminescent devices
in which switches are provided by each pixel (or each dot) are
considered as advantageous since they can be driven with low
voltage.
[0005] Above EL layer has a laminated structure typified by "a hole
transporting layer, a light emitting layer, an electron
transporting layer". An EL material for forming an EL layer is
classified broadly into a low-molecular (monomer) material and
high-molecular (polymer) material. The low-molecular material is
deposited using the evaporation apparatus shown in FIG. 14.
[0006] The evaporation apparatus shown in FIG. 14 has a substrate
holder 1403 installed on a substrate, a melting pot 1401
encapsulated an EL material, an evaporation material, a shutter
1402 for prevention of rising an EL material that will be sublimed,
and a heater (not shown) for heating an EL material in a melting
pot. Then, an EL material heated by the heater is sublimed and
deposited on a rolling substrate. At this time, in order to deposit
uniformly, the substrate and the melting pot is necessary to have a
distance therebetween at least 1 m.
[0007] According to the above-described vapor deposition device and
the above-described vapor deposition method, when the EL layer is
formed by vapor deposition, almost all of the sublimated EL
material is adhered to an inner wall, a shutter or an adherence
preventive shield (protective plate for preventing a vapor
deposition material from adhering to an inner wall of a film
forming chamber) at inside of the film forming chamber of the vapor
deposition device. Therefore, in forming the EL layer, an
efficiency of utilizing the expensive EL material is extremely low
i.e. about 1% or smaller and fabricating cost of a luminescent
device becomes very expensive.
[0008] Further, according to the vapor deposition device of the
related art, in order to provide a uniform film, it is necessary to
separate a board from a vapor deposition source by an interval
equal to or larger than 1 m. Therefore, the vapor deposition device
per se becomes large-sized, a time period required for exhausting
each film forming chamber of the vapor deposition device is
prolonged and therefore, a film forming rate is retarded and
throughput is lowered. Further, the vapor deposition device is of a
structure of rotating the board and therefore, there is a limit in
the vapor deposition device aiming at a large area board.
[0009] Further, there is a problem that the EL material is easily
oxidized due to presence of oxygen or water to be deteriorated.
However, in forming a film by a vapor deposition method, a
predetermined amount of a vapor deposition material put into a
vessel (glass bottle) is taken out and transferred to a vessel
(representatively, crucible, or vapor deposition boat) installed at
a position opposed to an object to be formed with a film at inside
of a vapor deposition device and there is a concern that the vapor
deposition material is mixed with oxygen or water or an impurity in
the transferring operation.
[0010] Further, when the vapor deposition material is transferred
from the glass bottle to the vessel, the vapor deposition material
is transferred by the human hand at inside of a pretreatment
chamber of a film forming chamber provided with a glove or the
like. However, when the glove is provided at the pretreatment
chamber, the chamber cannot be subjected to vacuum, the operation
is carried out under atmospheric pressure and there is a high
possibility of mixing an impurity. Even when the transferring
operation is carried out at inside of the pretreatment chamber
subjected to a nitrogen atmosphere, it is difficult to reduce
moisture or oxygen as less as possible. Further, although it is
conceivable to use a robot, since the vapor deposition material is
in a powder-like shape and therefore, it is very difficult to
fabricate the robot for carrying out the transferring operation.
Therefore, it is difficult to perform steps of forming an EL
element, that is, from a step of forming an EL layer above a lower
electrode to a step of forming an upper electrode, by an integrated
closed system preventing an impurity from mixing.
SUMMARY OF THE INVENTION
[0011] Hence, the invention provides a vapor deposition device
which promotes an efficiency of utilizing an EL material and is
excellent in uniformity or throughput of forming an EL layer and a
vapor deposition method therefor. Further, the invention provides a
luminescent device fabricated by the vapor deposition device and
the vapor deposition method according to the invention and a method
of fabricating the luminescent device.
[0012] Further, the invention provides a method of vapor-depositing
an EL material efficiently to a large area board having a size of,
for example, 320 mm.times.400 mm, 370 mm.times.470 mm, 400
mm.times.500 mm, 550 mm.times.650 mm, 600 mm.times.720 mm, 620
mm.times.730 mm, 680 mm.times.880 mm, 730 mm.times.920 mm, 1000
mm.times.1200 mm, 1100 mm.times.1250 mm or 1150 mm.times.1300
mm.
[0013] According to the above-described large area board, there is
conceivable a problem that when the board is fixedly held by board
holding means (permanent magnet or the like), the board is bent
partially. Further, when the larger area is formed, there is also a
concern of bending a thin mask.
[0014] Further, the invention provides a fabricating system capable
of avoiding an impurity from mixing to an EL material.
[0015] In order to achieve the above-described object, according to
the invention, there is provided board holding means for supporting
a board such that when multiface cutting (forming a plurality of
panels from one sheet of board) by using a large area board,
portions for constituting scribe lines later are brought into
contact therewith. That is, the board is mounted on the board
holding means and vapor deposition is carried out to a region which
is not brought into contact with the board holding means by
sublimating a vapor deposition material from a vapor deposition
source holder provided on a lower side of the board holding means.
Thereby, bending of the large area board can be restrained to be
equal to or smaller than 1 mm.
[0016] Further, when a mask (representatively, a metal mask) is
used, the mask may be mounted above the board holding means and the
board may be mounted above the mask. Thereby, bending of the mask
can be restrained to be equal to or smaller than 1 mm. Further, the
vapor deposition mask may be brought into close contact with the
board or a board holder or a vapor deposition mask holder fixed to
the board by providing an interval to some degree therebetween may
pertinently be provided.
[0017] Further, when the mask or the inner wall of the chamber is
cleaned, the board holding means may be formed by a conductive
material and a vapor deposition material adhered to the mask or the
inner wall of the chamber may be removed by generating plasma by
the high frequency power source connected to the board holding
means.
[0018] Further, in order to achieve the above-described object,
according to the invention, there is provided a vapor deposition
device characterized in that a board and a vapor deposition source
are moved relative to each other. That is, the invention is
characterized in that at inside of a vapor deposition chamber, a
vapor deposition source holder installed with a vessel filled with
a vapor deposition material is moved relative to the board by a
certain pitch or the board is moved by a certain pitch relative to
the vapor deposition source. Further, it is preferable to move a
vapor deposition source holder by a certain pitch such that ends
(skirts) of the sublimated vapor deposition material are laminated
(overlapped).
[0019] Although a single or a plurality of the vapor deposition
source holders may be used, when the vapor deposition source holder
is provided for each of laminated layers of an EL layer, vapor
deposition can be carried out efficiently and continuously.
Further, a single or a plurality of vessels may be installed to the
vapor deposition source holder, further, a plurality of vessels
filled with the same vapor deposition material may be installed.
Further, when a vessel including different vapor deposition
materials is installed, a film can be formed on a board in a state
of mixing the sublimated vapor deposition materials (which is
referred to as common vapor deposition).
[0020] Next, an explanation will be given of an outline of a path
for moving a board and a vapor deposition source according to the
invention relative to each other. Further, although the explanation
will be given by an example of moving the vapor deposition source
holder relative to the board in reference to FIGS. 2A and 2B,
according to the invention, the board and the vapor deposition
source may be moved relative to each other and the path of moving
the vapor deposition source holder is not limited to those in FIGS.
2A and 2B. Further, although the explanation will be given of a
case of four vapor deposition source holders A, B, C and D, any
number of the vapor deposition source holders may naturally be
provided.
[0021] FIG. 2A illustrates a board 13, vapor deposition source
holders A, B, C and D installed with vapor deposition sources, and
a path for moving the vapor deposition source holders A, B, C and D
relative to the board. First, the vapor deposition source holder A
is moved successively in the X axis direction to finish forming a
film in the X axis direction as shown by a broken line. Next, the
vapor deposition source holder A is moved successively in the Y
axis direction and stopped at a position of a dotted line after
finishing forming a film in the Y axis direction. Thereafter, the
vapor deposition source holders B, C and D are successively moved
similarly in the X axis direction to finish forming films in the X
axis direction similarly as shown by a broken line. Next, the vapor
deposition source holders B, C and D successively moved in the Y
axis direction and stopped after finishing forming films in the Y
axis direction. Further, the vapor deposition holder may start
moving from the Y axis direction and the path of moving the vapor
deposition source holder is not limited to that of FIG. 2A.
Further, the vapor deposition source holder may move alternately in
the X axis direction and the Y axis direction.
[0022] Further, each vapor deposition source holder returns to an
original position and starts vapor deposition for a succeeding
board. A timing of returning each vapor deposition source holder to
the original position may be a timing from formation of the film to
the successive formation of the film and may be in the midst of
forming a film by other vapor deposition source holder. Further,
vapor deposition may be started for a succeeding board from a
position at which each vapor deposition source holder is
stopped.
[0023] Next, a path different from that of FIG. 2A will be
explained in reference to FIG. 2B. In reference to FIG. 2B, the
vapor deposition source holder A is moved successively in the X
axis direction and moved successively in the Y axis direction as
shown by a broken line to form films and stopped on a rear side of
the vapor deposition source holder D as shown by a dotted line.
Thereafter, the vapor deposition source holders B, C and D are
moved in the X axis direction as shown by the broken line and
successively moved in the Y axis direction similarly and stopped on
rear sides of preceding ones of the vapor deposition source holders
after finishing to form films.
[0024] By setting the path such that the vapor deposition source
holder returns to the original position in this way, there is not
unnecessary movement of the vapor deposition source holder and the
film forming speed can be increased and therefore, the throughput
of the luminescent device can be promoted.
[0025] Further, in FIGS. 2A and 2B, timings of starting to move the
vapor deposition source holders A, B, C and D may be after stopping
or before stopping preceding ones of the vapor deposition source
holders. Further, when a succeeding one of the vapor deposition
source holder starts moving before solidifying a vapor-deposited
film, in an EL layer having a laminated layers structure, a region
mixed with vapor deposition materials (mixed region) may be formed
at an interface of respective films.
[0026] According to the invention of moving the board and the vapor
deposition source holders A, B, C and D relative to each other in
this way, small-sized formation of the device can be achieved
without the need for increasing a distance between the board and
the vapor deposition source holder. Further, since the vapor
deposition device is small-sized, adherence of the sublimated vapor
deposition material to the inner wall or the adherence preventive
shield at inside of the film forming chamber is reduced and the
vapor deposition material can be utilized without waste. Further,
according to the vapor deposition method of the invention, it is
not necessary to rotate the board and therefore, the vapor
deposition device capable of dealing with a large area board can be
provided. Further, according to the invention of moving the vapor
deposition source holder in the X axis direction and the Y axis
direction relative to the board, the vapor-deposited film can
uniformly be formed.
[0027] Further, the invention can provide a fabricating device
continuously arranged with a plurality of film forming chambers for
carrying out a vapor deposition processing. The vapor deposition
processing is carried out at the plurality of film forming chambers
in this way and therefore, the throughput of the luminescent device
is promoted.
[0028] Further, the invention can provide a fabricating system
enabling installation of a vessel filled with a vapor deposition
material directly to the vapor deposition device without being
exposed to the atmosphere. According to the invention, handling of
the vapor deposition material is facilitated and an impurity can be
avoided from being mixed to the vapor deposition material.
[0029] According to constitution 1 of the invention disclosed in
the specification, as shown by an example thereof in FIGS. 1A, 1B
and 1C, there is provided a vapor deposition device which forms a
film on a board by vapor-depositing an organic compound material
from a vapor deposition source holder arranged to be opposed to the
board, wherein a film forming chamber arranged with the board
includes board holding means and means for moving the vapor
deposition source holder and the vapor deposition source holder
includes a vessel filled with a vapor deposition material, means
for heating the vessel and a shutter provided above the vessel, the
means for moving the vapor deposition source holder is provided
with a function of moving the vapor deposition source holder by a
certain pitch in the X axis direction and moving the vapor
deposition source holder in the Y axis direction by a certain
pitch, and the board holding means is arranged between the board
and the vapor deposition holder.
[0030] Further, in the constitution 1, the board holding means
overlaps with a region for constituting a terminal portion, a
cutting region or an end portion of the board, with a mask
interposed therebetween.
[0031] Further, in the constitution 1, as shown in FIGS. 4A, 4B and
4C, the board holding means includes a projection and supports the
board or the mask at a top point of the projection.
[0032] Further, plasma generating means may be provided and other
constitution of the invention disclosed in the invention is a vapor
deposition device forms a film on a board by vapor-depositing an
organic compound material from a vapor deposition holder arranged
to be opposed to the board, wherein a film forming chamber arranged
with the board includes board holding means and means for moving
the vapor deposition source holder and the vapor deposition source
holder includes a vessel filled with a vapor deposition material
and means for heating the vessel and a shutter provided above the
vessel, the means for moving the vapor deposition source holder has
a function of moving the vapor deposition source holder in the X
axis direction by a certain pitch and moving the vapor deposition
source holder in the Y axis direction by a certain pitch, the board
holding means is arranged between the board and the vapor
deposition holder, and the film forming chamber is connected to a
vacuum processing chamber for vacuuming inside of the film forming
chamber and generates a plasma in the film forming chamber.
[0033] Further, in the constitution 2, the board holding means
comprises a conductive material and the board holding means is
connected with a high frequency power source.
[0034] Further, the board holding means may be fabricated from a
shape memory alloy and for example, Ni--Ti series alloy may be
used. The shape memory alloy is an alloy capable of memorizing a
constant shape and returning to an original shape by heating even
when deformed and deformation is produced not by dislocation of a
crystal structure but by a martensitic transformation which does
not change bonding between atoms. When the shape memory alloy in
the martensitic state is heated to a temperature of transforming
into austenitic phase or higher, the martensitic phase is
transformed into the austenitic phase. At this occasion, the shape
provided in the martensitic phase state is released to return to
the original shape.
[0035] Further, in the constitution 2, the board holding means
overlaps with a region for constituting a terminal portion, a
cutting region or an end portion of the board, with a mask
interposed therebetween.
[0036] Further, in the constitution 2, as shown by FIGS. 4A, 4B and
4C, the board holding means includes a projection and the board or
the mask is supported by a top point of the projection.
[0037] Further, in the respective constitutions, the board holding
means includes a projection and a height of the projection falls in
a range of 1 .mu.m through 30 .mu.m, preferably, 3 .mu.m through 10
.mu.m.
BRIEF DESCRIPTION OF THE DRAWINGS
[0038] FIGS. 1A, 1B and 1C are views showing a vapor deposition
device according to the invention;
[0039] FIGS. 2A and 2B are views showing a path of moving a vapor
deposition source according to the invention;
[0040] FIGS. 3A1, 3A2, 3A3, 3B1, 3B2, 3C1, 3C2 and 3C3 are views
showing board holding means (Embodiment 2);
[0041] FIGS. 4A, 4B, 4C and 4D are views showing an example of
board holding means (Embodiment 2);
[0042] FIGS. 5A and 5B are views showing a vapor deposition source
holder according to the invention;
[0043] FIG. 6 is a view showing a fabricating system according to
the invention;
[0044] FIG. 7 is a view showing a carrier vessel according to the
invention;
[0045] FIGS. 8A and 8B are views showing a vapor deposition device
according to the invention;
[0046] FIGS. 9A and 9B are views showing a vapor deposition device
according to the invention;
[0047] FIGS. 10A and 10B are views showing a luminescent device
according to the invention;
[0048] FIGS. 11A and 11B are views showing a luminescent device
according to the invention;
[0049] FIG. 12 is a view showing a vapor deposition device
according to the invention;
[0050] FIG. 13 is a view showing a vapor deposition device
according to the invention;
[0051] FIG. 14 is a view showing a vapor deposition device;
[0052] FIG. 15 is a view showing a vapor deposition device
according to the invention; and
[0053] FIG. 16A through FIG. 16H are views showing examples of
electronic device using the invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0054] An explanation will be given of embodiments of the invention
in reference to the drawings as follows. Further, in all of views
for explaining the embodiments, the same portions are attached with
the same notations and a repeated explanation thereof will be
omitted.
[0055] Embodiment 1
[0056] FIGS. 1A, 1B and 1C show an evaporation system according to
the invention. FIG. 1A is a sectional view in X direction (a
section taken along a dotted line A-A'), FIG. 1B is a sectional
view in Y direction (a section taken along a dotted line B-B') and
FIG. 1C is a top view. Further, FIGS. 1A, 1B and 1C show the
evaporation system in the midst of evaporation.
[0057] In FIGS. 1A, 1B and 1C, a deposition chamber 11 includes a
board holding means 12, an evaporation source holder 17 installed
with an evaporation shutter 15, means for moving the evaporation
source holder (not illustrated) and means for producing a low
pressure atmosphere. Further, the deposition chamber 11 is
installed with a board 13 and an evaporation mask 14.
[0058] Further, the board holding means 12 is provided for fixing
the evaporation mask 14 made from a metal by gravitation and
therefore fixing the board 13 which is arranged over the
evaporation mask. Note that a vacuum suction mechanism may be
incorporated into the board holding means 12, and vacuum suction is
performed for fixing the mask. Although an example of bringing the
evaporation mask into close contact with the board holding means 12
is shown here, in order to prevent the evaporation mask and the
board holding means form fixing each other, an insulator may be
provided in the intersection portion of the evaporation mask and
the board holding means each other or a shape of the board holding
means may be arbitrarily adjusted so as to be in point contact with
the evaporation mask. Further, although an example of installing
both the board and the evaporation mask by means of the board
holding means 12 is shown here, a means for holding the board and
another means for holding the evaporation mask may be individually
provided.
[0059] Further, it is preferable that the board holding means 12 be
formed in a cutting region (a region to be a scribe line) when a
multiple pattern is executed because evaporation can not be
performed in a region that is overlapping with the board holding
means 12. Or, the board holding means 12 may be formed so as to
overlap with a region to be a panel terminal portion. As shown in
FIG. 1C, the board holding means 12 is formed in the shape of a
cross as seen from the upper surface since FIG. 1C shows an example
of forming four panels that are drawn in a dotted line within one
board 13. However, the shape of the board holding means 12 is not
limited to this structure, an asymmetry shape may be acceptable.
Incidentally, not shown in the figure, the board holding means 12
is fixed in the deposition chamber. Note that masks are not shown
in FIG. 1C for simplification.
[0060] Further, alignments of the evaporation mask and the board
may be confirmed by using a CCD camera (not illustrated). The
alignment control may be performed by installing alignment markers
in the board and evaporation mask respectively. The evaporation
source holder 17 is installed with a vessel filled with an
evaporation material 18. The deposition chamber 11 is vacuumed to a
vacuum degree of 5.times.10.sup.-3Torr (0.665 Pa) or lower,
preferably, 10.sup.-4 through 10.sup.-6 Pa by the means for
producing the low pressure atmosphere.
[0061] Further, in evaporation, the evaporation material is
previously sublimated (vaporized) by resistance heating and
scattered in a direction of the board 13 by opening the shutter 15
in evaporation. An evaporated evaporation material 19 is scattered
in an upward direction and is selectively vapor-deposited on the
board 13 by passing an opening portion provided at the evaporation
mask 14. Further, preferably, a deposition rate, a moving speed of
the evaporation source holder and opening and closing of the
shutter are controlled by a microcomputer. The evaporation rate of
the evaporation source holder can be controlled by the moving
speed.
[0062] Further, although not illustrated, evaporation can be
carried out while measuring a film thickness of a deposited film by
a quartz oscillator provided at the deposition chamber 11. When the
film thickness of the deposited film is measured by using the
quartz oscillator, a change in mass of a film deposited to the
quartz oscillator can be measured as a change in the resonance
frequency.
[0063] In the evaporation system shown in FIG. 1, in evaporation, a
distance d of an interval between the board 13 and the evaporation
source holder 17 can be reduced to, representatively, 30 cm or
smaller, preferably, 20 cm or smaller, further preferably, 5 cm
through 15 cm to thereby significantly promote an efficiency of
utilizing the evaporation material and throughput.
[0064] In the evaporation system, the evaporation source holder 17
is constituted by a vessel (representatively, crucible), a heater
arranged on an outer side of the vessel via a uniformly heating
member, an insulating layer provided on an outer side of the
heater, an outer cylinder containing these, a cooling pipe wound
around an outer side of the outer cylinder and the evaporation
shutter 15 for opening and closing an opening portion of the outer
cylinder including an opening portion of a crucible. Further, the
evaporation source holder 17 may be a vessel capable of being
carried in a state of fixing the heater to the vessel. Further, the
vessel is formed by a material of a sintered body of BN, a
composite sintered body of BN and AlN, quartz or a graphite capable
of withstanding high temperature, high pressure and low
pressure.
[0065] Further, the evaporation source holder 17 is provided with a
mechanism movable in X direction or Y direction at inside of the
deposition chamber 11 while maintaining a horizontal state. In this
case, the evaporation source holder 17 is made to move in zigzag on
a two-dimensional plane as shown by FIG. 2A or FIG. 2B. Further, a
pitch of moving the evaporation source holder 17 may pertinently be
matched to an interval between insulators. Further, insulators 10
are arranged in a stripe shape to cover end portions of first
electrodes 21. Note that, the board holding means is not
illustrated in FIG. 2A and FIG. 2B for simplification.
[0066] Further, it is not necessarily needed that an organic
compound provided at the evaporation source holder is one or one
kind thereof but may be a plurality of kinds thereof. For example,
other than one kind of a material provided as a luminescent organic
compound at the evaporation source holder, other organic compound
which can be a dopant (dopant material) may be provided along
therewith. It is preferable to design an organic compound layer to
be vapor-deposited to constitute by a host material and a
luminescent material (dopant material) having excitation energy
lower than that of the host material such that the excitation
energy of the dopant becomes lower than excitation energy of a hole
transporting region and excitation energy of an electron
transporting layer. Thereby, diffusion of a molecular exciter of
the dopant can be prevented and the dopant can effectively be made
to emit light. Further, when the dopant is a material of a carrier
trap type, an efficiency of recombining carriers can also be
promoted. Further, the invention includes a case in which a
material capable of converting triplet excitation energy to
luminescence is added to a mixing region as a dopant. Further, in
forming the mixing region, a concentration gradient may be provided
to the mixing region.
[0067] Further, when a plurality of organic compounds are provided
at a single evaporation source holder, it is preferable for
evaporating directions to be skew to intersect at a position of an
object to be deposited such that the organic compounds are mixed
together. Further, in order to carry out common evaporation, the
evaporation source holder may be provided with four kinds of
evaporation materials (for example, two kinds of host materials as
evaporation material a, two kinds of dopant materials as
evaporation material b). Further, when a pixel size is small (or,
an interval between respective insulators is narrow), a film can
finely be formed by dividing inside of a vessel in four and
carrying out common evaporation for subjecting respectives
pertinently to evaporation.
[0068] Further, since the interval distance d between the board 13
and the evaporation source holder 17 is narrowed to,
representatively, 30 cm or smaller, preferably, 5 cm through 15 cm,
there is a concern of heating also the evaporation mask 14.
Therefore, it is preferable for the evaporation mask 14 to use a
metal material having a low thermal expansion rate which is
difficult to deform by heat (for example, a high melting point
metal such as tungsten, tantalum, chromium, nickel or molybdenum or
an alloy including these elements, a material such as stainless
steel, inconel, Hastelloy). For example, a low thermal expansion
alloy having 42% of nickel and 58% of iron or the like is pointed
out. Further, in order to cool the evaporation mask to be heated,
the evaporation mask may be provided with a mechanism of
circulating a cooling medium (such as cooling water, cooling
gas).
[0069] Further, in order to clean a deposited substance adhered to
the mask, it is preferable to generate a plasma at inside of the
deposition chamber by plasma generating means to vaporize the
deposited substance adhered to the mask to vent the vapor to
outside of the deposition chamber. For that purpose, a high
frequency power source 20 is connected to the board holding means
12. As mentioned above, it is preferable that the board holding
means 12 is formed by a conductive material (such as Ti). When
plasma is generated, it is preferable that a metal mask is
electrically provided so as to levitate from the board holding
means 12 in order to prevent electric field concentrations.
[0070] Further, the evaporation mask 14 is used when an evaporation
film is selectively formed on a first electrode 21 (cathode or
anode) and the evaporation mask 14 is not particularly needed when
the evaporation film is formed over an entire face thereof.
[0071] Further, the deposition chamber includes gas introducing
means for introducing one kind or a plurality of kinds of gases
selected from the group consisting of Ar, H, F, NF.sub.3, and O and
venting means for venting the deposited substance vaporized. By the
above-described constitution, inside of the deposition chamber can
be cleaned without being in contact with the atmosphere in
maintenance.
[0072] Further, the deposition chamber 11 is connected with a
vacuuming chamber for vacuuming inside of the deposition chamber.
The vacuum processing chamber is provided with a turbo-molecular
pump of a magnetic levitation type, a cryopump or a dry pump.
Thereby, the ultimate vacuum degree of the deposition chamber 11
can be made to be 10.sup.-5 through 10.sup.-6 Pa and inverse
diffusion of an impurity from a pump side and an venting system can
be controlled. In order to prevent an impurity from being
introduced into the deposition chamber 11, as a gas to be
introduced, an inert gas of nitrogen or rare gas is used. There are
used the gases to be introduced which are highly purified by a gas
refiner before being introduced into the device. Therefore, it is
necessary to provide the gas refiner such that the gas is highly
purified and thereafter introduced into the deposition chamber 11.
Thereby, an impurity of oxygen, moisture or the like included in
the gas can previously be removed and therefore, the impurities can
be prevented from being introduced into the deposition chamber
11.
[0073] According to the deposition chamber having the mechanism of
moving the evaporation source holder as described above, it is not
necessary to prolong the distance between the board and the
evaporation source holder and the evaporation film can uniformly be
formed.
[0074] Therefore, according to the invention, the distance between
the board and the evaporation source holder can be shortened and
small-sized formation of the evaporation system can be achieved.
Further, since the evaporation system becomes small-sized,
adherence of the sublimated evaporation material to the inner wall
or the adherence preventive shield at inside of the deposition
chamber can be reduced and the evaporation material can effectively
be utilized. Further, according to the evaporation method of the
invention, it is not necessary to rotate the board and therefore,
the evaporation system capable of dealing with a large area board
can be provided.
[0075] Further, by shortening the distance between the board and
the evaporation source holder in this way, the evaporation film can
be deposited thinly and controllably.
[0076] (Embodiment 2)
[0077] Next, a detailed description will be given of a constitution
of board holding means according to the invention in reference to
FIGS. 3A1, 3A2, 3A3, 3B1, 3B2, 3C1, 3C2 and 3C3.
[0078] FIG. 3A1 shows a perspective view of a board holding means
301 mounted with a board 303 and a mask 302 and FIG. 3A2 shows only
the board holding means 301.
[0079] Further, FIG. 3A3 shows a sectional view of the board
holding means mounted with the board 303 and the mask 302 which is
constituted by a metal plate (representatively, Ti) having a height
h of 10 mm through 50 mm and a width w of 1 mm through 5 mm.
[0080] By the board holding means 301, bending of the board or
bending or the mask can be restrained.
[0081] Further, the shape of the board holding means 301 is not
limited to that shown by FIGS. 3A1 through 3A3 but may be
constituted by a shape as shown in, for example, 3B2.
[0082] FIG. 3B2 shows an example of providing portions supporting
end portions of the board and by board holding means 305, bending
of the board 303 or bending of the mask 302 is restrained. Further,
FIG. 3B2 shows only the board holding means 305. Further, FIG. 3B1
shows a perspective view of the board holding means 305 mounted
with the board 303 and the mask 302.
[0083] Further, in place of the shape of the board holding means, a
shape as shown in FIG. 3C2 may be constituted. FIG. 3C2 shows an
example of providing a mask frame 306 supporting end portions of
the board and by the board holding means 307 and the mask frame
306, bending of the board 303 or bending of the mask 302 is
restrained. In this case, the board holding means 307 and the mask
frame 306 may be formed by materials different from each other.
Further, the mask frame 306 is provided with a recess for fixing a
position of the mask 302 as shown in FIG. 3C3.
[0084] Further, FIG. 3C2 shows only the mask frame 306 and the
board holding means 307. Further, FIG. 3C1 shows a perspective view
of the board holding means 305 and the mask frame 306 mounted with
the board 303 and the mask 302.
[0085] Further, in place of the shape of the board holding means, a
shape as shown in FIGS. 4A, 4B, 4C and 4D may be constituted. FIGS.
4A, 4B, 4C and 4D shows an example of making contact with a mask by
point contact. By constituting the shape in this way, there is
shown an example in which the mask and the board holding means are
prevented from being fixedly attached by a deposited substance.
[0086] FIG. 4A shows a perspective view of board holding means 401
mounted with a board 403 and a mask 402 and FIG. 4B shows only the
board holding means 401.
[0087] Further, FIG. 4C shows a sectional view of the board holding
means mounted with the board 403 and the mask 402 in the X
direction, which is constituted by a metal plate (representatively,
Ti) having a height h2 of 10 mm through 50 mm. Further, the board
holding means 401 includes a projection 401a and a height h1 of the
projection is characterized in falling in a range of 1 .mu.m
through 30 .mu.m, preferably, 3 .mu.m through 10 .mu.m.
[0088] Further, FIG. 4D shows a sectional view of the board holding
means in the Y direction.
[0089] Next, a specific constitution of a vapor deposition source
holder will be explained in reference to FIGS. 5A and 5B. FIGS. 5A
and 5B show enlarged views of vapor deposition source holders.
[0090] FIG. 5A shows a constitution example of providing four
vessels 501 filled with a vapor deposition material to a vapor
deposition source holder 502 in a shape of a lattice and providing
shutters 503 above the respective vessels and FIG. 5B shows a
constitution example of providing four vessels 511 filled with a
vapor deposition material to a vapor deposition source holder 512
in a linear shape and providing shutters 513 above the respective
vessels.
[0091] A plurality of the vessels 501 or 511 filled with the same
material may be installed at the vapor deposition source holder 502
or 512 illustrated in FIG. 5A or 5B or a single one of the vessel
may be installed at the vapor deposition source holder. Further,
common vapor deposition may be carried out by installing vessels
filled with different vapor deposition materials (for example, host
material and guest material). Further, as described above, the
vapor deposition material is sublimated by heating the vessel and a
film is formed to the board.
[0092] Further, as shown in FIG. 5A or 5B, it may be controlled
whether or not the film is formed by the sublimated vapor
deposition material by providing the shutter 503 or 513 above each
vessel. Further, only a single one of the shutter may be provided
above all of the vessels. Further, by the shutter, it can be
reduced to sublimate and scatter an unnecessary vapor deposition
material without stopping heating the vapor deposition source
holder which does not form the film, that is, the vapor deposition
source holder at standby. Further, the constitution of the vapor
deposition source holder is not limited to those of FIGS. 5A and 5B
but may pertinently be designed by a person embodying the
invention.
[0093] By the above-described vapor deposition source holder and
vessel, the vapor deposition material can efficiently be
sublimated, further, the film is formed in a state in which the
size of the vapor deposition material is even and therefore, a
uniform vapor deposition film without nonuniformity is formed.
Further, a plurality of vapor deposition materials can be installed
at the vapor deposition source holder and therefore, common vapor
deposition can easily be carried out. Further, an aimed EL layer
can be formed in one operation without moving the film forming
chamber for each film of the EL layer.
[0094] (Embodiment 3)
[0095] An explanation will be given, with reference to FIG. 6, of a
system of a fabricating method of filling a refined evaporation
material in the above-described vessel, carrying the vessel and
thereafter installing the vessel directly at an evaporation system
which is a deposition device, to carry out evaporation.
[0096] FIG. 6 illustrates a maker, representatively, a material
maker 618 (representatively, material maker) for producing and
refining an organic compound material which is an evaporation
material and a maker (representatively, production factory) 619 of
a luminescent device which is a maker of a luminescent device
having an evaporation system.
[0097] First, an order 610 is carried out from the luminescent
device maker 619 to the material maker 618. Based on the order 610,
the material maker 618 refines to sublimate an evaporation material
and fills an evaporation material 612 in a shape of a powder
refined in high purity to a first vessel 611. Thereafter, the
material maker 618 isolates the first vessel from the atmosphere
such that an extra impurity is not adhered to inside or outside
thereof, and contains the first vessel 611 in second vessels 621a
and 621b to hermetically seal for preventing the first vessel 611
from being contaminated at inside of the clean environment chamber.
In hermetically sealing the second vessels 621a and 621b, at inside
of the vessels it is preferable to be vacuum or to be filled with
an inert gas of nitrogen or the like. Further, it is preferable to
clean the first vessel 611 and the second vessels 621a and 621b
before refining or containing the evaporation material 612 with an
ultra high purity. Further, although the second vessels 621a and
621b may be package films having barrier performance for blocking
oxygen or moisture from mixing thereinto, in order to be able to
take out the vessels automatically, it is preferable that the
second vessels are constituted by stout vessels having light
blocking performance in a shape of a cylinder or a shape of a
box.
[0098] Thereafter, the first vessel 611 is carried (617) from the
material maker 618 to the luminescent device maker 619 in a state
of being hermetically sealed by the second vessels 621a and
621b.
[0099] At the luminescent device maker 619, the first vessel 611 is
directly introduced into a vacuumable processing chamber 613 in a
state of being hermetically sealed in the second vessels 621a and
621b. Further, the processing chamber 613 is an evaporation system
installed with heating means 614 and board holding means (not
illustrated) at inside thereof.
[0100] Thereafter, inside of the processing chamber 613 is vacuumed
to bring about a clean state in which oxygen or moisture is reduced
as less as possible, thereafter, without breaking the vacuum, the
first vessel 611 is taken out from the second vessels 621a and
621b, the first vessel 611 is installed in contact with the heating
means 614 and an evaporation source can be prepared. Further, an
object to be deposited (here, board) 615 is installed at the
processing chamber 613 to be opposed to the first vessel 611.
[0101] Successively, an evaporation film 616 is formed on a surface
of the object to be deposited 615 by applying heat to the
evaporation material by the heating means 614. The evaporation film
616 provided in this way does not include an impurity and when a
luminescent element is finished by using the evaporation film 616,
high reliability and high brightness can be realized.
[0102] Further, after forming the film, the evaporation material
remaining at the first vessel 611 may be sublimated to refine at
the luminescent device maker 619. After forming the film, the first
vessel 611 is installed at the second vessels 621a and 621b, taken
out from the processing chamber 613 and carried to a refining
chamber for sublimating to refine the evaporation material. There,
the remaining evaporation material is sublimated to refine and the
evaporation material in a shape of a powder refined at high purity
is filled into a separate vessel. Thereafter, in a state of being
hermetically sealed in the second vessel, the evaporation material
is carried to the processing chamber 613 to carry out evaporation
processing. At this occasion, it is preferable that a relationship
among temperature (T3) for refining the remaining evaporation
material, temperature (T4) elevated at a surrounding of the
evaporation material and temperature (T5) at a surrounding of the
evaporation material which is sublimated to refine satisfy
T3>T4>T5. That is, in the case of sublimating to refine the
material, when temperature is lowered toward a side of the vessel
for filling the evaporation material to be sublimated to refine,
convection is brought about and the deposition material can be
sublimated to refine efficiently. Further, the refining chamber for
sublimating to refine the evaporation material may be provided in
contact with the processing chamber 613 and the evaporation
material which has been sublimated to refine may be carried without
using the second vessel for hermetically sealing the evaporation
material.
[0103] As described above, the first vessel 611 is installed in the
evaporation chamber which is the processing chamber 613 without
being brought into contact with the atmosphere at all to enable to
carry out evaporation while maintaining the purity at the stage of
containing the evaporation material 612 by the material maker.
Therefore, according to the invention, a fully automated
fabricating system promoting the throughput can be realized and an
integrated closed system capable of avoiding the impurity from
mixing to the evaporation material 612 refined at the material
maker 618 can be realized. Further, the evaporation material 612 is
directly contained in the first vessel 611 by the material maker
based on the order and therefore, only a necessary amount thereof
is provided to the luminescent device maker and the comparatively
expensive evaporation material can efficiently be used. Further,
the first vessel and the second vessel can be reutilized to amount
to a reduction in cost.
[0104] A specific explanation will be given of a mode of the vessel
to be carried in reference to FIG. 7 as follows. A second vessel
divided into an upper portion (621a) and a lower portion (621b)
used for transportation includes fixing means 706 provided at an
upper portion of the second vessel for fixing a first vessel, a
spring 705 for pressing the fixing means, a gas introducing port
708 provided at a lower portion of the second vessel for
constituting a gas path for maintaining the second vessel being
depressurized, an O ring 707 for fixing the upper vessel 621a and
the lower vessel 621b and a retaining piece 702. The first vessel
611 filled with the refined evaporation material is installed in
the second vessel. Further, the second vessel may be formed by a
material including stainless steel and the first vessel may be
formed by a material including titanium.
[0105] At the material maker, the refined evaporation material is
filled in the first vessel 611. Further, the upper portion 621a and
the lower portion 621b of the second vessel are matched via the O
ring 707, the upper vessel 621a and the lower vessel 621b are fixed
by the retaining piece 702, and the first vessel 611 is
hermetically sealed at inside of the second vessel. Thereafter,
inside of the second vessel is depressurized via the gas
introducing port 708 and is replaced by a nitrogen atmosphere and
the first vessel 611 is fixed by the fixing means 706 by adjusting
the spring 705. A desiccant may be installed at inside of the
second vessel. When inside of the second vessel is maintained in
vacuum, in a low pressure or in nitrogen atmosphere in this way,
even a small amount of oxygen or moisture can be prevented from
adhering to the evaporation material.
[0106] The first vessel 611 is carried to the luminescent device
maker 619 under the state and is directly installed to the
processing chamber 613. Thereafter, the evaporation material is
sublimated by heating and the evaporation film 616 is formed.
[0107] Next, an explanation will be given of a mechanism of
installing the first vessel 611 which is carried by being
hermetically sealed in the second vessel to a deposition chamber
806 in reference to FIGS. 8A and 8B and FIGS. 9A and 9B. Further,
FIGS. 8A and 8B and FIGS. 9A and 9B show the first vessel in the
midst of transportation.
[0108] FIG. 8A illustrates to a top view of an installing chamber
805 including a base 804 for mounting the first vessel or the
second vessel, an evaporation source holder 803, a rotating base
807 for mounting the base 804 and the evaporation source holder 803
and carrying means 802 for carrying the first vessel, and FIG. 8B
illustrates a perspective view of the installing chamber. Further,
the installing chamber 805 is arranged to be contiguous to the
deposition chamber 806 and the atmosphere of the installing chamber
can be controlled by means for controlling the atmosphere via a gas
introducing port. Further, the carrying means of the invention is
not limited to a constitution of pinching a side face of the first
vessel to carry as illustrated in FIGS. 8A and 8B but may be
constructed by a constitution of pinching (picking) the first
vessel at upper part thereof to carry.
[0109] The second vessel is arranged to such an installing chamber
805 above the base 804 in a state of disengaging the retaining
piece 702. Successively, inside of the installing chamber 805 is
brought into a decompressed state by means for controlling the
atmosphere. When pressure at inside of the installing chamber and
pressure at inside of the second vessel become equal to each other,
there is brought about a state of being capable of opening the
second vessel easily. Further, the upper portion 621a of the second
vessel is removed and the first vessel 611 is installed in the
evaporation source holder 803 by the carrying means 802. Further,
although not illustrated, a portion for installing the removed
upper portion 621a is pertinently provided. Further, the
evaporation source holder 803 is moved from the installing chamber
805 to the deposition chamber 806.
[0110] Thereafter, by heating means provided at the evaporation
source holder 803, the evaporation material is sublimated and the
film starts to be formed. In forming the film, when a shutter (not
illustrated) provided at the evaporation source holder 803 is
opened, the sublimated evaporation material is scattered to the
direction of the board and the vapor-deposited onto the board to
form the luminescent layer (including hole transporting layer, hole
injecting layer, electron transporting layer and electron injecting
layer).
[0111] Further, after finishing evaporation, the evaporation source
holder 803 returns to the installing chamber 805 and the first
vessel 611 installed at the evaporation source holder 803 by the
carrying means 802 is transferred to the lower vessel (not
illustrated) of the second vessel installed at the base 804 and is
hermetically sealed by the upper vessel 621a. At this occasion, it
is preferable that the first vessel, the upper vessel 621a and the
lower vessel are hermetically sealed by a combination by which the
vessels have been carried. Under the state, the installing chamber
805 is brought under the atmospheric pressure and the second vessel
is taken out from the installing chamber, fixed with the retaining
piece 702 and is carried to the material maker 618.
[0112] Further, in order to carry the evaporation source holder for
starting evaporation and the evaporation source holder finished
with evaporation efficiently, the rotating base 807 may be provided
with a rotating function. Further, the structure of the rotating
base 807 is not limited to the above-mentioned structure, and the
rotating base 807 may have a function of moving in leftward and
rightward directions and when the rotating base 807 is closed to
the evaporation source holder installed at the deposition chamber
806, a plurality of the first vessels may be installed at the
evaporation source holder by the carrying means 802.
[0113] Next, an explanation will be given of a mechanism of
installing a plurality of first vessels carried by being
hermetically sealed by the second vessels to a plurality of the
evaporation source holders, which is different from those of FIGS.
8A and 8B in reference to FIGS. 9A and 9B.
[0114] FIG. 9A illustrates a top view of an installing chamber 905
including a base 904 for mounting the first vessel or the second
vessel, a plurality of evaporation source holders 903, a plurality
of carrying means 902 for carrying the first vessels and a rotating
base 907 and FIG. 9B illustrates a perspective view of the
installing chamber 905. Further, the installing chamber 905 is
arranged to be contiguous to a deposition chamber 906 and the
atmosphere of the installing chamber can be controlled by means for
controlling the atmosphere via a gas introducing port.
[0115] By the rotating base 907 and the plurality of carrying means
902, operation of installing the plurality of first vessels 611 to
the plurality of evaporation source holders 903 and transferring
the plurality of first vessels 611 from the plurality of
evaporation source holders finished with film formation to the base
904 can efficiently be carried out. At this occasion, it is
preferable to install the first vessel 611 to the second vessel
which has been carried.
[0116] According to an evaporation film formed by the
above-described evaporation system, an impurity can be reduced to
an extreme and when a luminescent element is finished by using the
evaporation film, high reliability and brightness can be realized.
Further, by such a fabricating system, the vessel filled by the
material maker can be installed directly to the evaporation system
and therefore, oxygen or moisture can be prevented from adhering to
the evaporation material and further ultrahigh purity formation of
the luminescent element in the future can be dealt with. Further,
by refining the vessel having the remaining evaporation material
again, waste of the material can be eliminated. Further, the first
vessel and the second vessel can be reutilized and the low cost
formation can be realized.
EXAMPLES
[0117] Examples of the present invention is described thereinafter
based on the drawings. In addition, in all drawings used for the
description of the examples, same portions are given common
symbols, and the repetitive descriptions thereof are omitted.
Example 1
[0118] In this example, an example of forming TFT on a substrate
having an insulating surface and forming an EL element, that is a
light emitting element, is shown in FIG. 10. A cross-sectional view
of one TFT that is connected to an EL element in a pixel portion is
shown in this example.
[0119] A base insulating film 201 is formed by a lamination of
insulating films such as a silicon oxide film, a silicon nitride
film or a silicon oxynitride film on a substrate 200 having an
insulating surface. Although the base insulating film 201 herein
uses a two-layer structure, it may use a structure having a single
layer or two layers or more of the insulating films. The first
layer of the base insulating film is a silicon oxynitride film
formed to have a thickness of 10 to 200 nm (preferably 50 to 100
nm) by a plasma CVD using a reaction gas of SiH.sub.4, NH.sub.3 and
N.sub.2O. Herein, a silicon oxynitride film is formed (composition
ratio: Si=32%, O=27%, N=24% and H=17%) having a film thickness of
50 nm. The second layer of the base insulating film is a silicon
oxynitride film formed to have a thickness 50 to 200 nm (preferably
100 to 150 nm) by a plasma CVD using a reaction gas of SiH.sub.4
and N.sub.2O. Herein, a silicon oxynitride film is formed
(composition ratio: Si=32%, O=59%, N=7% and H=2%) having a film
thickness of 100 nm.
[0120] Subsequently, a semiconductor layer is formed on the base
insulating film 201. The semiconductor layer is formed as follows:
an amorphous semiconductor film is formed by known means (a
sputtering, an LPCVD, a plasma CVD, or the like), then, the film is
crystallized by a known crystallization method (a laser
crystallization method, a thermal crystallization method or a
thermal crystallization method using a catalyst such as nickel),
and then, the crystalline semiconductor film is patterned into a
desired form. This semiconductor layer is formed in a thickness of
25 to 80 nm (preferably 30 to 60 nm). The material of the
crystalline semiconductor film, although not limited in material,
is preferably formed of silicon or a silicon-germanium alloy.
[0121] In the case of forming a crystalline semiconductor film by a
laser crystallizing process, it is possible to use an excimer
laser, a YAG laser, or an YVO.sub.4 laser of a pulse-oscillation or
continuous-oscillation type. In the case of using such laser,
preferably used is a method that the laser light emitted from a
laser oscillator is condensed by an optical system into a linear
form to be irradiated onto the semiconductor film. The condition of
crystallization is to be appropriately selected by those who
implement the invention. In the case of using an excimer laser,
pulse oscillation frequency is 30 Hz and laser energy density is
100 to 400 mJ/cm.sup.2 (typically 200 to 300 mJ/cm.sup.2).
Meanwhile, in the case of using a YAG laser, preferably its second
harmonic is used and pulse oscillation frequency is 1 to 10 kHz and
laser energy density is 300 to 600 mJ/cm.sup.2 (typically 350 to
500 mJ/cm.sup.2). The laser light focused linear to a width of 100
to 1000 .mu.m, e.g. 400 .mu.m, is irradiated throughout the
substrate entirety, whereupon the overlap ratio of linear laser
beam may be taken 50 to 98%.
[0122] Then, the surface of the semiconductor layer is cleaned by
an etchant containing a hydrogen fluoride, to form a gate
insulating film 202 covering the semiconductor layer. The gate
insulating film 202 is formed by an insulating film containing
silicon having a thickness of 40 to 150 nm by the use of a plasma
CVD or sputtering. In this example, a silicon oxynitride film is
formed (composition ratio: Si=32%, O=59%, N=7% and H=2%) to have a
thickness of 115 nm by a plasma CVD. Of course, the gate insulating
film 202 is not limited to a silicon oxynitride film but may be
made in a single layer or a lamination of layers of insulating
films containing other form of silicon.
[0123] After cleaning the surface of the gate insulating film 202,
a gate electrode 210 is formed.
[0124] Then, a p-type providing impurity element (such as B),
herein, adequate amounts of boron is added to the semiconductor to
form a source region 211 and a drain region 212. After the addition
of the impurity element, heating process, intense light radiation
or laser irradiation is made in order to activate the impurity
element. Simultaneously with activation, restoration is possible
from the plasma damage to the gate insulating film or from the
plasma damage at the interface between the gate insulating film and
the semiconductor layer. Particularly, the impurity element is
activated by irradiating the excimer laser at a main or back
surface in an atmosphere at room temperature to 300.degree. C.
Further, the second harmonic of a YAG laser may be irradiated
thereby activating the impurity element. The YAG laser is
preferable activating means since it requires a few
maintenances.
[0125] In the subsequent process, after hydrogenation is carried
out, an insulator 213a made from an organic or inorganic material
(for example, from a photosensitive organic resin) is formed, then,
an aluminum nitride film, an aluminum oxynitride film shown as
AlN.sub.xO.sub.y, or a first protection film 213b made from a
silicon nitride film are formed. The film shown as AlN.sub.xO.sub.y
is formed by introducing oxygen, nitrogen, or rear gas from the gas
inlet system by RF sputtering using a target made of AlN or Al. The
content of nitrogen in the AlN.sub.xO.sub.y film may be in the
range of at least several atom %, or preferably 2.5 to 47.5 atom %,
and the content of oxygen may be in the range of at most 47.5 atom
%, preferably, less than 0.01 to 20 atom %. A contact hole is
formed therein reaching the source region or drain region. Next, a
source electrode (wiring) 215 and a drain electrode 214 are formed
to complete a TFT (p-channel TFT). This TFT will control the
current that is supplied to an organic light emitting device
(OLED).
[0126] Also, the present invention is not limited to the TFT
structure of this example, but, if required, may be in a lightly
doped drain (LDD) structure having an LDD region between the
channel region and the drain region (or source region). This
structure is formed with a region an impurity element is added with
light concentration between the channel formation region and the
source or drain region formed by adding an impurity element with
high concentration, which is called an LDD region. Furthermore, it
may be in, what is called, a GOLD (Gate-drain Overlapped LDD)
structure arranging an LDD region overlapped with a gate electrode
through a gate insulating film. It is preferable that the gate
electrode is formed in a lamination structure and etched to have a
different taper angle of an upper gate electrode and a lower gate
electrode to form an LDD region and a GOLD region in a
self-aligning manner using the gate electrode as a mask.
[0127] Meanwhile, although explanation herein was by using the
p-channel TFT, it is needless to say that an n-channel TFT can be
formed by using an n-type impurity element (P, As, etc.) in place
of the p-type impurity element.
[0128] In addition, although the top gate type TFT is described as
an example in this example, the present invention can be applied
regardless of TFT structures. For instance, the present invention
can be applied to a bottom gate type (inverse stagger type) TFT or
forward stagger type TFT.
[0129] Subsequently, in the pixel portion, a first electrode 217 in
contact with a connecting electrode in contact with the drain
region is arranged in matrix shape. This first electrode 217 serves
as an anode or a cathode of the light-emitting element. Then, an
insulator (generally referred to as a bank, a partition, a barrier,
or the like) 216 that covers the end portion of the first electrode
217 is formed. For the insulator 216, a photosensitive organic
resin is used. In the case of using a negative type photosensitive
acrylic resin is used as a material of the insulator 216, for
example, the insulator 216 may be preferably prepared such that the
upper end portion of the insulator 216 has a curved surface having
a first curvature radius and the lower end portion of the insulator
has a curved surface having a second curvature radius. Each of the
first and second curvature radiuses may be preferably in the range
of 0.2 .mu.m to 3 .mu.m. Furthermore, a layer 218 containing an
organic compound is formed in the pixel portion, and a second
electrode 219 is then formed thereon to complete an EL element.
This second electrode 219 serves as a cathode or an anode of the EL
element.
[0130] The insulator 216 that covers the end portion of the first
electrode 217 maybe covered with a second protective film formed of
an aluminum nitride film, an aluminum nitride oxide film, or a
silicon nitride film.
[0131] For instance, an example of using a positive type
photosensitive acrylic resin as a material of the insulator 216 is
shown in FIG. 10B. The insulator 316a has a curved surface having a
curvature radius only the upper end thereof. Furthermore, the
insulator 316a is covered with a second protective film 316b formed
of an aluminum nitride film, an aluminum nitride oxide film, or a
silicon nitride film.
[0132] For instance, when the first electrode 217 is used as an
anode, the material of the first electrode 217 may be a metal
(i.e., Pt, Cr, W, Ni, Zn, Sn, or In) having a large work function.
The end portion of such an electrode 217 is covered with the
insulator (generally referred to as a bank, a partition, a barrier,
a mound, or the like) 216 or 316, then, a vacuum-evaporation is
carried out moving an evaporation source along with the insulator
216 or 316 by using the evaporation system shown in Embodiment 1 or
2. For example, a deposition chamber is vacuum-exhausted until the
degree of vacuum reaches 5.times.10.sup.-3 Torr (0.665 Pa) or less,
preferably 10.sup.-4 to 10.sup.-6 Pa, for vacuum-evaporation. Prior
to vacuum-evaporation, the organic compound is vaporized by
resistance heating. The vaporized organic compound is scattered on
the substrate as the shutter is opened for vacuum-evaporation. The
vaporized organic compound is scattered upward, then, deposited on
the substrate through an opening formed in a metal mask. A light
emitting layer (including a hole transporting layer, a hole
injection layer, an electron transporting layer, and an electron
injection layer) is formed.
[0133] In the case that a layer containing an organic compound is
formed that emits white luminescence in its entirety by
vacuum-evaporation, it can be formed by depositing each light
emitting layer. For instance, an Alq.sub.3 film, an Alq.sub.3 film
partially doped with Nile red which is a red light emitting
pigment, a p-EtTAZ film, and a TPD (aromatic diamine) film are
layered in this order to obtain white light.
[0134] In case of using vacuum-evaporation, as shown in Embodiment
3, a container (typically, a melting pot) in which an EL material
that a vacuum-evaporation material is stored in advance by a
material maker is set in a deposition chamber. Preferably, the
melting pot is set in the deposition chamber while avoiding contact
with the air. A melting pot shipped from a material maker is
preferably sealed in a second container during shipment and is
introduced into a deposition chamber in that state. Desirably, a
chamber having vacuum exhaust means is connected to the deposition
chamber (installing chamber), the melting pot is taken out of the
second container in vacuum or in an inert gas atmosphere in this
chamber, and then the melting pot is set in the deposition chamber.
In this way, the melting pot and the EL material stored in the
melting pot are protected from contamination.
[0135] Next, a second electrode 219 is formed as a cathode on the
light-emitting layer. The second electrode 219 comprises a laminate
structure of a thin film including a metal (e.g., Li, Mg, or Cs)
having a small work function; and a transparent conductive film
(made from an indium tin oxide (ITO) alloy formed, an indium zinc
oxide alloy (In.sub.2O.sub.3--ZnO), zinc oxide (ZnO), or the like)
on the thin film. For attaining a low-resistance cathode, an
auxiliary electrode may be provided on the insulator 216. The
light-emitting element thus obtained emits white luminescence.
Here, the example in which the layer 218 containing the organic
compound is formed by vacuum-evaporation has been described.
According to the present invention, however, it is not limited to a
specific method and the layer 218 may be formed using a coating
method (such as a spin coating method, an ink jet method).
[0136] In this example, an example of depositing layers made from
low molecular material as an organic compound layer is described
though, both high molecular materials and low molecular materials
may also be deposited.
[0137] It can be thought that there are two types of structures of
an active matrix light emitting device having TFT in terms of
radiating direction of luminescence. One is a structure that
luminescence generated in a light emitting element can be observed
passing through the second electrode, and can be manufactured using
the above-mentioned steps.
[0138] Another structure is that luminescence generated in the
light emitting element is irradiated into the eyes of the observer
after passing through the first electrode and the substrate. When
luminescence generated in the light emitting element is irradiated
in to the eyes of the observer after passing through the first
electrode, it is preferable that the first electrode 217 may be
prepared using a material having a translucency. For instance, when
the first electrode 217 is provided as an anode, a transparent
conductive film (made from an indium tin oxide (ITO) alloy, an
indium zinc oxide alloy (In.sub.2O.sub.3--ZnO), zinc oxide (ZnO),
or the like) is used for a material of the first electrode 217 and
the end portion thereof is covered with the insulator (generally
referred to as a bank, a partition, a barrier, a mound, or the
like) 216, followed by forming the layer 218 containing an organic
compound. On this layer, furthermore, a second electrode 219 formed
of a metal film (i.e., an alloy of MgAg, MgIn, AlLi, CaF.sub.2,
CaN, or the like, or a film formed by a co-vacuum-evaporation of an
element of Group I and Group II in the periodic table and aluminum)
is formed as a cathode. Here, a resistive heating method using
vacuum-evaporation is used for the formation of a cathode, so that
the cathode can be selectively formed using a vacuum-evaporation
mask.
[0139] After forming the second electrode 219 by the steps
described above, a seal substrate is laminated using a sealing
material to encapsulate the light-emitting element formed on the
substrate 200.
[0140] Further, an appearance view of an active matrix type
light-emitting device is described with reference to FIG. 11.
Further, FIG. 11A is a top view showing the light emitting
apparatus and FIG. 11B is a sectional view constituted by cutting
along a line A-A' in FIG. 11A. A source signal side driving circuit
1101, a pixel portion 1102, and a gate signal line driving circuit
1103 are formed on a substrate 1110. An inner side surrounded by a
seal substrate 1104, the sealing material 1105, and the substrate
1110 constitutes a space 1107.
[0141] Further, a wiring 1108 for transmitting signals inputted to
the source signal side driving circuit 1101 and the gate signal
side driving circuit 1103 receives a video signal or a clock signal
from FPC (flexible printed circuit) 1109 for constituting an
external input terminal. Although only FPC is illustrated here, the
FPC may be attached with a printed wiring board (PWB). The light
emitting apparatus in the specification includes not only a main
body of the light emitting apparatus but also a state in which FPC
or PWB is attached thereto.
[0142] Next, a sectional structure will be explained in reference
to FIG. 11B. Driver circuits and the pixel portion are formed over
a substrate 1110 and here, the source signal line driving circuit
1101 as the driver circuit and the pixel portion 1102 are
shown.
[0143] Further, the source signal line driving circuit 1101 is
formed with a CMOS circuit combined with an n-channel type TFT 1123
and a p-channel type TFT 1124. Further, TFT for forming the driver
circuit may be formed by a publicly-known CMOS circuit, PMOS
circuit or NMOS circuit. Further, although according to this
example, a driver integrated type formed with the driver circuits
over the substrate is shown, the driver integrated type is not
necessarily be needed and the driver circuits can be formed not
over the substrate but at outside thereof.
[0144] Further, the pixel portion 1102 is formed of a plurality of
pixels each including a switching TFT 1111, a current controlling
TFT 1112, and a first electrode (anode) 1113 electrically connected
to a drain of the current controlling TFT 1112.
[0145] Further, an insulating layer 1114 is formed at both ends of
the first electrode (anode) 1113 and an layer containing an organic
compound 1115 is formed on the first electrode (anode) 1113. The
layer containing an organic compound 1115 is formed by moving an
evaporation source holder along with the insulating film 1114 by
using the evaporation device shown in Embodiments 1 and 2. Further,
a second electrode (cathode) 1116 is formed over the layer
containing an organic compound 1115. As a result, a light-emitting
element 1118 comprising the first electrode (anode) 1112, the layer
containing an organic compound 1115 and the second electrode
(cathode) 1116 is formed. Here, the light-emitting element 1118
shows an example of white color luminescence and therefore,
provided with the color filter comprising a color conversion layer
1131 and a light-shielding layer 1132 (for simplification, overcoat
layer is not illustrated here).
[0146] In FIG. 11, a color filter is formed at the side of a seal
substrate 1104 since it is the structure that light emitted from a
light emitting element is observed through the second electrode,
however, in case of the structure that light emitted from a light
emitting element is observed through the first electrode, a color
filter may be formed at the side of the substrate 1110.
[0147] The second electrode (cathode) 1116 functions also as a
wiring common to all the pixels and electrically connected to FPC
1109 via the connection wiring 1108. The third electrode (auxiliary
electrode) 1117 is formed on the insulating layer 1114 to realize
to make the second electrode have a low resistance.
[0148] Further, in order to encapsulate the light-emitting element
1118 formed over the substrate 1110, the seal substrate 1104 is
pasted by the sealing material 1105. Further, a spacer comprising a
resin film may be provided for ensuring an interval between the
seal substrate 1104 and the light-emitting element 1118. Further,
the space 1107 on the inner side of the sealing material 1105 is
filled with an inert gas of nitrogen or the like. Further, it is
preferable to use epoxy species resin for the sealing material
1105. Further, it is preferable that the sealing material 1105 is a
material for permeating moisture or oxygen as less as possible.
Further, the inner portion of the space 1107 may be included with
the substance having an effect of absorbing oxygen or moisture.
[0149] Further, according to the example, as a material for
constituting the seal substrate 1104, other than glass substrate or
quartz substrate, a plastic substrate comprising FRP
(Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar,
polyester or acrylic resin can be used. Further, it is possible to
adhere the seal substrate 1104 by using the sealing material 1105
and thereafter seal to cover a side face (exposed face) by a
sealing material.
[0150] By encapsulating the light-emitting element as described
above, the light-emitting element can completely be blocked from
outside and a substance for expediting to deteriorate the organic
compound layer such as moisture or oxygen can be prevented from
invading from outside. Therefore, the highly reliable
light-emitting device can be provided.
[0151] Further, although this example shows only an example of the
active matrix type light emitting device, a passive matrix type
light emitting device can be completed by using the present
invention.
[0152] Further, this example can be freely combined with
Embodiments 1 to 3.
Example 2
[0153] According to the example, FIG. 12 shows an example of a
fabricating device of a multichamber system fully automating
fabrication of from a first electrode to sealing.
[0154] FIG. 12 shows a multichamber fabricating device having gates
10a through 100x, a preparing chamber 101, a take-out chamber 119,
carrying chambers 102, 104a, 108, 114 and 118, delivery chambers
105, 107 and 111, deposition chambers 106R, 106B, 106G, 106H, 106E,
109, 110, 112 and 113, installing chambers for installing
evaporation sources 126R, 126G, 126B, 126E and 126H, a pretreatment
chamber 103, a sealed board loading chamber 117, a sealing chamber
116, cassette chambers 111a and 111b, a tray mounting stage 121, a
cleaning chamber 122, a baking chamber 123 and a mask stock chamber
124.
[0155] A procedure of carrying a board previously provided with a
thin film transistor, an anode and an insulator for covering an end
portion of the anode to the fabricating device shown in FIG. 12 and
fabricating a luminescent device will be shown as follows.
[0156] First, the board is set to the cassette chamber 111a or the
cassette chamber 111b. When the board is a large-sized board (for
example, 300 mm.times.360 mm), the board is set to the cassette
chamber 111a or 111b and when the board is a normal board (for
example, 127 mm.times.127 mm), the board is carried to the tray
mounting stage 121 and a plurality of the boards are set to a tray
(for example, 300 mm.times.360 mm).
[0157] Successively, the board provided with pluralities of thin
film transistors, anodes and insulators for covering the end
portions of the anodes is carried to the carrying chamber 118 and
carried to the cleaning chamber 122 to remove an impurity (small
particle or the like) on the surface of the board by a solution.
When the board is cleaned at the cleaning chamber 122, a face of
the board to be formed with a film is set to direct downwardly
under the atmospheric pressure. Successively, the board is carried
to the baking chamber 123 to vaporize the solution by heating.
[0158] Successively, the board is carried to the deposition chamber
112 and an organic compound layer operating as a hole injecting
layer is formed on an entire face of the board previously provided
with the pluralities of thin film transistors, anodes and
insulators for covering end portions of anodes. According to the
example, a film of copper phthalocyaninne (CuPc) is formed by 20
nm. Further, when PEDOT is formed as a hole injecting layer, PEDOT
may be formed by a spin coating method by providing a spin coater
at the deposition chamber 112. Further, when an organic compound
layer is formed by the spin coating method at the deposition
chamber 112, a face of the board to be deposited with film is set
to direct upwardly under the atmospheric pressure. At this
occasion, when the film is formed by using water or an organic
solvent as a solvent, the board is carried to the baking chamber
123 for sintering and moisture is vaporized by carrying out a
heating treatment in vacuum.
[0159] Successively, the board is carried from the carrying chamber
118 provided with a board carrying mechanism to the preparing
chamber 101. According to the fabricating device of the embodiment,
the preparing chamber 101 is provided with a board reversing
mechanism and the board can pertinently be reversed. The preparing
chamber 101 is connected to a vacuuming chamber and it is
preferable to bring the preparing chamber 101 under the atmospheric
pressure by introducing an inert gas after vacuuming.
[0160] Successively, the board is carried to the carrying chamber
102 connected to the preparing chamber 101. It is preferable to
maintain vacuum by previously vacuuming such that moisture or
oxygen is present as less as possible at inside of the carrying
chamber 102.
[0161] Further, the vacuuming chamber is provided with a
turbo-molecular pump of a magnetic levitation type, a cryopump or a
dry pump. Thereby, an ultimate vacuum degree of the carrying
chamber connected to the preparing chamber can be made to fall in a
range of 10.sup.-5 through 10.sup.-6 Pa and inverse diffusion of an
impurity from a pump side and an exhaust system can be controlled.
In order to prevent an impurity from introducing to inside of the
device, as a gas to be introduced, an inert gas of nitrogen, a rare
gas or the like is used. There is used the gases introduced into
the device which are highly purified by a gas refiner before being
introduced into the device. Therefore, it is necessary to provide
the gas refiner such that the gas is introduced into the
evaporation system after having been purified highly. Thereby, an
impurity of oxygen, water or the like included in the gas, can
previously be removed and therefore, the impurity can be prevented
from being introduced into the device.
[0162] Further, when a film including an organic compound formed at
a useless portion is intended to remove, the board may be carried
to the pretreatment chamber 103 to selectively remove a laminated
layer of the organic compound film by using a metal mask. The
pretreatment chamber 103 includes plasma generating means and dry
etching is carried out by generating plasma by exciting a single
kind or a plurality of kinds of gases selected from the group
consisting of Ar, H, F and 0. Further, it is preferable to carry
out an annealing operation for degassing in vacuum in order to
remove moisture or other gas included in the board and the board
may be carried to the pretreatment chamber 103 connected to the
carrying chamber 102 to anneal.
[0163] Successively, the board is carried from the carrying chamber
102 to the delivery chamber 105 and from the delivery chamber 105
to the carrying chamber 104a without being exposed to the
atmosphere. Further, an organic compound layer comprising low
molecules for constituting a hole transporting layer or a
luminescent layer is formed on the hole injecting layer (CuPc)
provided on the entire face of the board. Although for a whole of a
luminescent element, an organic compound layer indicating light
emittance of single color (specifically, white color), or full
color (specifically, red color, green color, blue color) can be
formed, in this example, an explanation will be given of an example
of forming organic compound layers indicating light emittance of
red color, green color, blue color at the respective deposition
chambers 106R, 106G and 106B by an evaporation method.
[0164] First, the respective deposition chambers 106R, 106G and
106B will be explained. The respective deposition chamber 106R,
106G and 106B are installed with movable evaporation source holders
described in Embodiments 1 and 2. A plurality of the evaporation
source holders are prepared, a first evaporation source holder is
filled with an EL material for forming a hole transporting layer of
each color, a second evaporation source holder is filled with an EL
material for forming a luminescent layer of each color, a third
evaporation source holder is filled with an EL material for forming
an electron transporting layer of each color and a fourth
evaporation source holder is filled with an EL material for forming
an electron injecting layer of each color and the respective
evaporation source holders are installed at the respective
deposition chambers 106R, 106G and 106B under the state.
[0165] In installing the board to the respective deposition
chambers, it is preferable to use the fabricating system described
in Embodiment 3 and install vessels (representatively, crucibles)
previously contained with the EL materials by the material maker
directly to the deposition chambers. Further, in installing the
vessel, it is preferable to install the vessel without being
brought into contact with the atmosphere and in carrying the vessel
from the material maker, it is preferable to introduce the crucible
into the deposition chamber in a state of being hermetically sealed
in the second vessel. Preferably the installing chambers 126R, 126G
and 126B having vacuuming means connected to the respective
deposition chambers 106R, 106G and 106B are brought into vacuum or
in an inert gas atmosphere and under the atmosphere, the crucible
is taken out from the second vessel and the crucible is installed
at the deposition chamber. Thereby, the crucible and the EL
material contained in the crucible can be prevented from
contamination.
[0166] Next, a deposition step will be explained. First, a metal
mask contained in the mask stock chamber 124 is carried to install
at the deposition chamber 106R. Further, the hole transporting
layer is formed by using the mask. In the example, a film of
.alpha.-NPD is formed by 60 nm. Thereafter, by using same mask, a
luminescent layer of red color is formed and the electron
transporting layer and the electron injecting layer are
successively formed. According to the example, a film of Alq.sub.3
added with DCM is formed by 40 nm as the luminescent layer, a film
of Alq.sub.3 is formed by 40 nm as an electron transporting layer
and a layer of CaF.sub.2 is formed by 1 nm as the electron
injecting layer.
[0167] Specifically, at the deposition chamber 106R, in the state
of installing the mask, the first evaporation source holder
installed with the EL material of the hole transporting layer, the
second evaporation source holder installed with the EL material of
the luminescent layer, the third evaporation source holder
installed with the EL material of the electron transporting layer
and the fourth evaporation source holder installed with the
electron injecting layer are successively moved to carry out film
formation. Further, in forming the films, the organic compounds are
vaporized by resistance heating and in forming the films, the
organic compounds are scattered to the direction of the board by
opening shutters (not illustrated) provided at the evaporation
source holders. The vaporized organic compounds are scattered
upwardly and vapor-deposited to the board by passing an opening
portion (not illustrated) provided at the metal mask (not
illustrated) pertinently installed to form the films.
[0168] In this way, without being opened to the atmosphere, in the
single forming chamber, the luminescent element (from hole
transporting layer to electron injecting layer) emitting light in
red color can be formed. Further, the layers continuously formed in
the single deposition chamber are not limited to the hole
transporting layer through the electron injecting layer but the
layers can pertinently be set by a person for embodying the
invention.
[0169] Further, the board formed with the luminescent element in
red color is carried to the deposition chamber 106G by a carrying
mechanism 104b. Further, a metal mask contained at the mask stock
chamber 124 is carried to install at the deposition chamber 106G.
Further, as the mask, the mask in forming the luminescent element
in red color may be utilized. Further, the hole transporting layer
is formed by using the mask. In the example, a film of .alpha.-NPD
is formed by 60 nm. Thereafter, the luminescent layer of green
color is formed and the electron transporting layer and the
electron injecting layer are successively formed by using the same
mask. In the example, a film of Alq.sub.3 added with DMQD is formed
by 40 nm as the luminescent layer, a film of Alq.sub.3 is formed by
40 nm as the electron transporting layer and a film of CaF.sub.2 is
formed by 1 nm as the electron injecting layer.
[0170] Specifically, in the deposition chamber 106G, in a state of
installing the mask, the first evaporation source holder installed
with the EL material of the hole transporting layer, the second
evaporation source holder installed with the EL material of the
luminescent layer, the third evaporation source holder installed
with the EL material of the electron transporting layer and the
fourth evaporation source holder installed with the EL material of
the electron injecting layer are successively moved to carry out
film formation. Further, in forming the films, the organic
compounds are vaporized by resistance heating and in forming the
films, the organic compounds are scattered in the direction of the
board by opening shutters (not illustrated) provided at the
evaporation source holders. The vaporized organic compounds are
scattered upwardly and vapor-deposited to the board by passing an
opening portion (not illustrated) provided at the metal mask (not
illustrated) pertinently installed to form the films.
[0171] In this way, without being opened to the atmosphere, in the
single deposition chamber, a luminescent element (from hole
transporting layer to electron injecting layer) emitting light in
green color can be formed. Further, the layers continuously formed
in the single deposition chamber are not limited to the hole
transporting layer through the electron injecting layer but the
layers may pertinently be set by the person for embodying the
invention.
[0172] Further, the board formed with the luminescent element in
green color is carried to the deposition chamber 106B by the
carrying mechanism 104b. Further, a metal mask contained in the
mask stock chamber 124 is carried to install at the deposition
chamber 106B. Further, as the mask, the mask in forming the
luminescent element in red color or green color may be utilized.
Further, films functioning as the hole transporting layer and a
luminescent layer in blue color are formed by using the mask. In
the example, a film of .alpha.-NPD is formed by 60 nm. Thereafter,
a blocking layer is formed and the electron transporting layer and
the electron injecting layer are successively formed by using the
same mask. In the example, a film of BCP is formed by 10 nm as the
blocking layer, a film of Alq.sub.3 is formed by 40 nm as the
electron transporting layer and a film of CaF.sub.2 is formed by 1
nm as the electron injecting layer.
[0173] Specifically, in the deposition chamber 106B, in a state of
installing the mask, the first evaporation source holder installed
with the EL materials of the hole transporting layer and the
luminescent layer in blue color, the second evaporation source
holder installed with the EL material of the blocking layer, the
third evaporation source holder installed with the EL material of
the electron transporting layer and the fourth evaporation source
holder installed with the electron injecting layer are successively
moved to carry out film formation. Further, in forming the films,
the organic compounds are vaporized by resistance heating and in
forming the films, the organic compounds are scattered in the
direction of the board by opening shutters (not illustrated)
provided at the evaporation source holders. The vaporized organic
compounds are scattered upwardly and vapor-deposited to the board
by passing an opening portion (not illustrated) provided at the
metal mask (not illustrated) pertinently installed to form the
films.
[0174] In this way, without being opened to the atmosphere, in the
single deposition chamber, the luminescent element (hole
transporting layer through electron injecting layer) emitting light
in green color can be formed. Further, the layers continuously
formed in the single deposition chamber are not limited to the hole
transporting layer to the electron injecting layer but may
pertinently be set by the person for embodying the invention.
[0175] Further, an order of forming the films of the respective
colors is not limited to that of the example but may pertinently be
set by the person for embodying the invention. Further, the hole
transporting layer, the electron transporting layer, or the
electron injecting layer can be shared by the respective colors.
For example, at the deposition chamber 106H, the hole injecting
layer or the hole transporting layer common to the luminescent
elements of red color, green color and blue color may be formed,
and the luminescent layers of the respective colors may be formed
at the respective deposition chambers 106R, 106G and 106B and the
electron transporting layer or the electron injecting layer common
to the luminescent elements of red color, green color and blue
color may be formed at the deposition chamber 106E. Further, at
each deposition chamber, the organic compound layer indicating
light emittance of a single color (specifically, white color) can
also be formed.
[0176] Further, the films can simultaneously be formed at the
respective deposition chambers 106R, 106G and 106B and by
successively moving the respective deposition chambers, the
luminescent element can efficiently be formed and tact of the
luminescent device is promoted. Further, when a certain deposition
chamber is subjected to maintenance, the respective luminescent
elements can be formed at remaining deposition chambers and the
throughput of the luminescent device is promoted.
[0177] Further, when the evaporation method is used, it is
preferable to carry out evaporation at the deposition chamber
vacuumed such that the vacuum degree becomes equal to or lower than
5.times.10.sup.-3Torr (0.665 Pa), preferably, 10.sup.-4 through
10.sup.-6 Pa.
[0178] Successively, after carrying the board from the carrying
chamber 104a to the delivery chamber 107, further, without being
brought into contact with the atmosphere, the board is carried from
the delivery chamber 107 to the carrying chamber 108. By the
carrying mechanism installed at inside of the carrying chamber 108,
the board is carried to the deposition chamber 110 and a cathode
(lower layer) comprising a very thin metal film (film formed by an
alloy of MgAg, MgIn, AlLi, CaN or the like or an element belonging
to group 1 or group 2 of the periodic table and aluminum by a
common evaporation method) is formed by an evaporation method using
resistance heating. After forming the cathode (lower layer)
comprising the thin metal layer, the board is carried to the
deposition chamber 109, by using sputtering method a cathode (upper
layer) comprising a transparent conductive film (ITO (indium oxide
tin oxide alloy), indium oxide zinc oxide alloy
(In.sub.2O.sub.3--ZnO), zinc oxide (ZnO) or the like) is formed and
the cathode comprising the laminated layers of the thin metal layer
and transparent conductive film is pertinently formed.
[0179] By the above-described steps, the luminescent element having
the laminated layers structure shown in FIGS. 10A and 10B is
formed.
[0180] Successively, without being brought into contact with the
atmosphere, the board is carried from the carrying chamber 108 to
the deposition chamber 113 and a protective film comprising a
silicon nitride film or a silicon oxynitride film is formed. In
this case, inside of the deposition chamber 113 is provided with a
sputtering device having a target comprising silicon, a target
comprising silicon oxide or a target comprising silicon nitride.
For example, the silicon nitride film can be formed by using a
target comprising silicon and constituting the atmosphere of the
deposition chamber by a nitrogen atmosphere or an atmosphere
including nitrogen and argon.
[0181] Successively, the board formed with the luminescent element
is carried from the carrying chamber 108 to the delivery chamber
111 and the from the delivery chamber 111 to the carrying chamber
114 without being brought into contact with the atmosphere.
Successively, the board formed with the luminescent element is
carried from the carrying chamber 114 to the sealing chamber 116.
Further, it is preferable to prepare a sealing board provided with
a sealing member at the sealing chamber 116.
[0182] The sealing board is prepared by setting the sealing board
to the sealing board loading chamber 117 from outside. Further, it
is preferable to anneal the sealing board previously in vacuum in
order to remove an impurity of moisture or the like, for example,
to anneal at inside of the sealing board loading chamber 117.
Further, when the sealing member for pasting together with the
board provided with the luminescent element at the sealing board,
after subjecting the carrying chamber 108 to the atmospheric
pressure, the sealing member is formed at the sealing board between
the sealing board loading chamber and the carrying chamber 114 and
the sealing board formed with the sealing member is carried to the
sealing chamber 116. Further, a desiccant may be provided to the
sealing board in the sealing board loading chamber.
[0183] Successively, in order to degas the board provided with the
luminescent element, after annealing in vacuum or an inert
atmosphere, the sealing board provided with the sealing member and
the board formed with the luminescent element are pasted together.
Further, nitrogen or an inert gas is filled in a hermetically
sealed space. Further, although an example of forming the sealing
member at the sealing board is shown here, the invention is not
particularly limited thereto but the sealing member may be formed
at the board formed with the luminescent element.
[0184] Successively, a pair of the boards pasted together is
irradiated with UV light by an ultraviolet ray irradiating
mechanism provided at the sealing chamber 116 to thereby cure the
sealing member. Further, although an ultraviolet ray cured resin is
used as the sealing member, so far as the sealing member is an
adhering member, the sealing member is not particularly limited
thereto.
[0185] Successively, the pair of boards pasted together is carried
from the sealing chamber 116 to the carrying chamber 114 and from
the carrying chamber 114 to the take-out chamber 119 and taken
out.
[0186] As described above, by using the fabricating device shown in
FIG. 12, the luminescent element is not exposed to the atmosphere
until completely sealing the luminescent element into the
hermetically sealed space and therefore, a highly reliable
luminescent device can be fabricated. Further, although in the
carrying chamber 114, vacuum and the nitrogen atmosphere under the
atmospheric pressure are repeated, it is preferable that vacuum is
always maintained in the carrying chambers 102, 104a and 108.
[0187] Further, a fabricating device of an in-line system can also
be constituted.
[0188] Further, a luminescent element having a light emitting
direction reverse to that in the laminated layers structure can
also be formed by carrying a transparent conductive film as an
anode to the fabricating device shown in FIG. 12.
[0189] Further, the example can freely combined with Embodiment 1
through Embodiment 3 and Example 1.
Example 3
[0190] In the example, FIG. 13 shows an example of a fabricating
device of a multichamber system fully automating fabrication from
the first electrode to sealing different from that of Example
2.
[0191] FIG. 13 shows a multichamber fabricating device including
gates 100a through 100s, the take-out chamber 119, the carrying
chambers 104a, 108, 114 and 118, the delivery chambers 105 and 107,
the preparing chamber 101, a first deposition chamber 106A, a
second deposition chamber 106B, a third deposition chamber 106C, a
fourth deposition chamber 106D, other deposition chambers 109a,
109b, 113a and 113b, processing chambers 120a and 120b, installing
chambers installed with evaporation sources 126A, 126B, 126C and
126D, pretreatment chambers 103a, 103b, a first sealing chamber
116a, a second sealing chamber 116b, a first stock chamber 130a, a
second stock chamber 130b, the cassette chambers 111a and 111b, the
tray mounting stage 121 and the cleaning chamber 122.
[0192] The following shows a procedure of carrying a board
previously provided with a thin film transistor, an anode and an
insulator covering an end portion of the anode to the fabricating
device shown in FIG. 13 and of fabricating a luminescent
device.
[0193] First, the board is set to the cassette chamber 111a or the
cassette chamber 111b. When the board is a large-sized board (for
example, 300 mm.times.360 mm), the board is set to the cassette
chamber 111a or 111b and when the board is the normal board (for
example, 127 mm.times.127 mm), the board is carried to the tray
mounting stage 121 and a plurality of the boards are set to a tray
(for example, 300 mm.times.360 mm).
[0194] Successively, the board provided with a plurality of thin
film transistors, anodes and insulators covering end portions of
the anodes is carried to the carrying chamber 118 and carried to
the cleaning chamber 122 to remove an impurity (small particle or
the like) at the surface of the board by a solution. When the board
is cleaned at the cleaning chamber 122, a face of the board to be
deposited with a film is set to direct downwardly under the
atmospheric pressure.
[0195] Further, when a film including an organic compound formed at
a useless portion is intended to remove, the board may be carried
to the pretreatment chamber 103 and a laminated layer of the
organic compound film may selectively be removed. The pretreatment
chamber 103 includes plasma generating means for carrying out dry
etching by generating plasma by exciting a single kind or a
plurality of kinds of gases selected from the group consisting of
Ar, H, F and O. Further, in order to remove moisture included in
the board or other gas or reduce plasma damage, it is preferable to
carry out annealing operation in vacuum and the board may be
carried to the pretreatment chamber 103 and subject the board to
annealing operation (for example, UV irradiation). Further, in
order to remove moisture or other gas included in an organic resin
material, the board may be heated under a low pressure atmosphere
at the pretreatment chamber 103.
[0196] Successively, the board is carried from the carrying chamber
118 provided with the board carrying mechanism to the preparing
chamber 101. According to the fabricating device of the example,
the preparing chamber 101 is provided with a board reversing
mechanism to enable to reverse the board pertinently. The preparing
chamber 101 is connected to a vacuuming chamber and after
vacuuming, it is preferable to subject the preparing chamber 101 to
the atmospheric pressure by introducing an inert gas.
[0197] Successively, the board is carried to the carrying chamber
104a connected to the preparing chamber 101. It is preferable to
maintain vacuum by previously vacuuming the carrying chamber 104a
such that moisture or oxygen is present as less as possible at
inside thereof.
[0198] Further, the vacuuming chamber is provided with a
turbo-molecular pump of a magnetic levitation type, a cryopump or a
dray pump. Thereby, the ultimate vacuum degree of the carrying
chamber connected to the preparing chamber can be made to fall in a
range of 10.sup.-5 through 10.sup.-6 Pa and reverse diffusion of
impurity from a pump side and the exhaust system can be controlled.
In order to prevent an impurity from being introduced into the
device, as a gas to be introduced, an inert gas such as nitrogen
and rare gas is used. The gas is introduced into the device which
is highly purified by a gas refiner before being introduced into
the device is used. Therefore, it is necessary to provide a gas
refiner such that the gases are introduced into the evaporation
system after having been highly purified. Thereby, oxygen or water
included in the gas and other impurity can previously be removed
and therefore, impurities can be prevented from being introduced
into the device.
[0199] Successively, the board is carried from the carrying chamber
104a to the first through the fourth deposition chambers 106A
through 106D. Further, an organic compound layer comprising low
molecules for constituting a hole injecting layer, a hole
transporting layer or a luminescent layer is formed.
[0200] Although for whole of a luminescent element, an organic
compound layer indicating light emittance of a single color
(specifically, white color) or full color (specifically, red color,
green color, blue color) can be formed, in this example, an
explanation will be given of an example of simultaneously forming
an organic compound layer indicating light emittance of white color
at the respective deposition chambers 106A, 106B, 106C and 106D (an
example of subjecting a parallel processing). Further, although
when luminescent layers having different light emitting colors are
laminated, an organic compound layer indicating light emittance of
white color is grossly classified into three wavelength type
including three original colors of red color, green color and blue
color and two wavelength type using a relationship of complementary
color of blue color/yellow color or bluish green color/orange
color, in this example, one example of providing a white color
luminescent element using the three wavelengths type will be
explained.
[0201] First, the respective deposition chambers 106A, 106B, 106C
and 106D will be explained. Each of the deposition chambers 106A,
106B, 106C and 106D is installed with a movable evaporation source
holder described in Embodiment 1. A plurality of the evaporation
source holders are prepared, a first evaporation source holder is
filled with aromatic diamine (TPD) for forming a white color
luminescent layer, a second evaporation source holder is filled
with p-EtTAZ for forming a white color luminescent layer, a third
evaporation source holder is filled with Alq.sub.3 for forming a
white color luminescent layer, a fourth evaporation source holder
is filled with an El material constituted by adding NileRed which
is a red color luminescent colorant to Alq.sub.3 for forming a
white color luminescent layer, a fifth evaporation source holder is
filled with Alq.sub.3 and the evaporation source holders are
installed at the respective deposition chambers under the
state.
[0202] It is preferable to install the EL materials to the
deposition chambers by using the fabricating system described in
Embodiment 3. That is, it is preferable to form the film by using a
vessel (representatively, crucible) contained with the EL material
previously by a material maker. Further, when installed, it is
preferable to install the crucible without being brought into
contact with the atmosphere and when transferred from the material
maker, it is preferable that the crucible is introduced into the
deposition chamber in a state of being hermetically sealed in the
second vessel. Preferably, the installing chambers 126A, 126B, 126C
and 126D having vacuuming means connected to the respective
deposition chambers 106A, 106B, 106C and 106D are brought in vacuum
or an inert gas atmosphere, a crucible is taken out from the second
vessel under the atmosphere and the crucible is installed to the
deposition chamber. Thereby, the crucible and the EL material
contained in the crucible can be prevented from being contaminated.
Further, the installing chambers 126A, 126B, 126C and 126D can
stock a metal mask.
[0203] Next, deposition steps will be explained. In the deposition
chamber 106A, a mask is carried and installed from the installing
chamber as necessary. Thereafter, the first through the fifth
evaporation source holders start moving successively and
evaporation is carried out for the board. Specifically, TPD is
sublimated from the first evaporation source holder by heating and
vapor-deposited over the entire face of the board. Thereafter,
p-EtTAZ is sublimated from the second evaporation source holder,
Alq.sub.3 is sublimated from the third evaporation source holder,
Alq.sub.3: NileRed is sublimated from the fourth evaporation source
holder and Alq.sub.3 is sublimated from the fifth evaporation
source holder and vapor-deposited over the entire face of the
board.
[0204] Further, when the evaporation method is used, it is
preferable to carry out evaporation at the deposition chamber
vacuumed in which the vacuum degree becomes 5.times.10.sup.-3Torr
(0.665 Pa) or lower, preferably 10.sup.-4 through 10.sup.-6 Pa.
[0205] Further, the evaporation source holders installed with the
respective EL materials are provided at the respective deposition
chambers and also in the deposition chambers 106B through 106D,
evaporation is carried out similarly. That is, the deposition
processing can be carried out in parallel. Therefore, even when a
certain deposition chamber is subjected to maintenance or cleaning,
the deposition processing can be carried out at remaining
deposition chambers, tact of film formation is promoted and
therefore, the throughput of the luminescent device can be
promoted.
[0206] Successively, after carrying the board from the carrying
chamber 104a to the delivery chamber 105, further, without being
brought into contact with the atmosphere, the board is carried from
the delivery chamber 105 to the carrying chamber 108.
[0207] Successively, by the carrying mechanism installed at inside
of the carrying chamber 108, the board is carried to the deposition
chamber 109a or the deposition chamber 109b to form a cathode. The
cathode may be formed by laminated films of a cathode (lower layer)
comprising a very thin metal film (film formed by an alloy of MgAg,
MgIn, AlLi, CaN or the like or an element belonging to group 1 or
group 2 of the periodic table and aluminum by a common evaporation
method) formed by an evaporation method using resistance heating,
and a cathode (upper layer) comprising a transparent conductive
film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide
alloy (In.sub.2O.sub.3--ZnO), zinc oxide (ZnO) or the like) formed
by a sputtering method. For that purpose, it is preferable to
arrange a deposition chamber for forming a very thin metal film at
the fabricating device.
[0208] By the above-described steps, the luminescent element having
the laminated layers structure shown in FIGS. 10A and 10B is
formed.
[0209] Successively, without being brought into contact with the
atmosphere, the board is carried from the carrying chamber 108 to
the deposition chamber 113a or the deposition chamber 113b and a
protective film comprising a silicon nitride film or a silicon
oxynitride film is formed. In this case, inside of the deposition
chamber 113a or 113b is provided with a target comprising silicon,
or a target comprising silicon oxide, or a target comprising
silicon nitride. For example, a silicon nitride film can be formed
by using a target comprising silicon and constituting an atmosphere
of the deposition chamber by a nitrogen atmosphere or an atmosphere
including nitrogen and argon.
[0210] Successively, without bringing the board formed with the
luminescent element in contact with the atmosphere, the board is
carried from the carrying chamber 108 to the delivery chamber 107
and carried from the delivery chamber 107 to the carrying chamber
114.
[0211] Successively, the board formed with the luminescent element
is carried from the carrying chamber 114 to the processing chamber
120a or the processing chamber 120b. At the processing chamber 120a
or 120b, a sealing member is formed on the board. Further, although
in the example, an ultraviolet ray cured resin is used for the
sealing member, for far as the sealing member is an adhering
member, the sealing member is not particularly limited thereto.
Further, the sealing member may be formed after setting the
processing chamber 120a or 120b to the atmospheric pressure.
Further, the board formed with the sealing member is carried to the
first sealing chamber 116a or the second sealing chamber 116b via
the carrying chamber 114.
[0212] Further, a sealing board formed with a color conversion
layer (color filter), light blocking layer (BM) and an overcoat
layer is carried to the first stock chamber 130a or the second
stock chamber 130b. Thereafter, the sealing board is carried to the
first sealing chamber 130a or the second sealing chamber 130b.
[0213] Successively, by carrying out annealing operation in vacuum
or in an inert atmosphere, the board provided with the luminescent
element is degassed and thereafter, the board provided with the
sealing member and the board formed with the color conversion layer
are pasted together. Further, nitrogen or an inert gas is filled in
a hermetically sealed space. Further, although an example of
forming the sealing member at the board is shown here, the
invention is not particularly limited thereto but the sealing
material may be formed at the sealing board. That is, the sealing
board may be formed with the color conversion layer (color filter),
the color blocking layer (BM), the overcoat layer and the sealing
member and thereafter carried to the first stock chamber 130a or
the second stock chamber 130b.
[0214] Successively, the pair of boards pasted together are
irradiated with UV light using an ultra violet light irradiation
mechanism provided in the first sealing chamber 116a or the second
sealing chamber 116b to cure the sealing member.
[0215] Successively, the pair of boards pasted together are carried
from the sealing chamber 116 to the carrying chamber 114 and from
the carrying chamber 114 to the take-out chamber 119 and taken
out.
[0216] As described above, by using the fabricating device shown in
FIG. 13, the luminescent element is not exposed to the atmosphere
until the luminescent element is sealed in the hermetically sealed
space and therefore, a highly reliable luminescent device can be
fabricated. Further, although in the carrying chamber 114, vacuum
and a nitrogen atmosphere under the atmospheric pressure are
repeated, it is preferable that the vacuum is always maintained in
the carrying chambers 102 and 104a and 108.
[0217] Further, an in-line system fabricating device can be
constituted.
[0218] It is also possible to carry a transparent conductive film
as an anode to the fabricating device shown in FIG. 13 and form a
luminescent element having a light emitting direction reverse to
that in the laminated layers structure.
[0219] FIG. 15 shows an example of a fabricating device different
from that of FIG. 13. Film formation may be carried out similarly
to FIG. 13 and therefore, a detailed explanation of deposition
steps will be omitted, a point of difference in the constitution of
the fabricating device resides in that a delivery chamber 111 and a
carrying chamber 117 are additionally provided and the carrying
chamber 117 is provided with a second sealing chamber 116b, a
second stock chamber 130 band deposition chambers (for forming
seal) 120c and 120d. That is, in FIG. 15, all of the deposition
chamber, the sealing chamber and the stock chamber are directly
connected to a certain carrying chamber and therefore, the board is
carried efficiently, further, the luminescent device can be
fabricated in parallel and the throughput of the luminescent device
is promoted.
[0220] Further, the parallel processing method of the luminescent
device of the example can be combined with Example 2. That is, the
deposition processing may be carried out by providing a plurality
of the deposition chambers 106R, 106G and 106B.
[0221] Further, the example can freely be combined with the
embodiments and Example 1.
Example 4
[0222] Given as examples of an electric appliance that employs a
luminescent device manufactured in accordance with the present
invention are video cameras, digital cameras, goggle type displays
(head mounted displays), navigation systems, audio reproducing
devices (such as car audio and audio components), laptop computers,
game machines, portable information terminals (such as mobile
computers, cellular phones, portable game machines, and electronic
books), and image reproducing devices equipped with recording media
(specifically, devices with a display device that can reproduce
data in a recording medium such as a digital versatile disk (DVD)
to display an image of the data). Wide viewing angle is important
particularly for portable information terminals because their
screens are often slanted when they are looked at. Therefore it is
preferable for portable information terminals to employ the
luminescent device using the light emitting element. Specific
examples of these electric appliance are shown in FIGS. 16A to
16H.
[0223] FIG. 16A shows a luminescent device, which is composed of a
case 2001, a support base 2002, a display unit 2003, speaker units
2004, a video input terminal 2005, etc. The luminescent device
manufactured in accordance with the present invention can be
applied to the display unit 2003. In addition, the luminescent
device shown in FIG. 16A can be completed by the present invention.
Since the luminescent device having the light emitting element is
self-luminous, the device does not need back light and can make a
thinner display unit than liquid crystal display devices. The
luminescent device refers to all luminescent devices for displaying
information, including ones for personal computers, for TV
broadcasting reception, and for advertisement.
[0224] FIG. 16B shows a digital still camera, which is composed of
a main body 2101, a display unit 2102, an image receiving unit
2103, operation keys 2104, an external connection port 2105, a
shutter 2106, etc. The luminescent device manufactured in
accordance with the present invention can be applied to the display
unit 2102. The digital camera shown in FIG. 16B can be completed by
the present invention.
[0225] FIG. 16C shows a laptop computer, which is composed of a
main body 2201, a case 2202, a display unit 2203, a keyboard 2204,
an external connection port 2205, a pointing mouse 2206, etc. The
luminescent device manufactured in accordance with the present
invention can be applied to the display unit 2203. The laptop
computer shown in FIG. 16C can be completed by the present
invention.
[0226] FIG. 16D shows a mobile computer, which is composed of a
main body 2301, a display unit 2302, a switch 2303, operation keys
2304, an infrared port 2305, etc. The luminescent device
manufactured in accordance with the present invention can be
applied to the display unit 2302. The mobile computer shown in FIG.
16D can be completed by the present invention.
[0227] FIG. 16E shows a portable image reproducing device equipped
with a recording medium (a DVD player, to be specific.). The device
is composed of a main body 2401, a case 2402, a display unit A
2403, a display unit B 2404, a recording medium (DVD or the like)
reading unit 2405, operation keys 2406, speaker units 2407, etc.
The display unit A 2403 mainly displays image information whereas
the display unit B 2404 mainly displays text information. The
luminescent device manufactured in accordance with the present
invention can be applied to the display units A 2403 and B 2404.
The image reproducing device equipped with a recording medium also
includes home-video game machines. The DVD reproducing device shown
in FIG. 16E can be completed by the present invention.
[0228] FIG. 16F shows a goggle type display (head mounted display),
which is composed of a main body 2501, display units 2502, and arm
units 2503. The luminescent device manufactured in accordance with
the present invention can be applied to the display units 2502. The
goggle type display shown in FIG. 16F can be completed by the
present invention.
[0229] FIG. 16G shows a video camera, which is composed of a main
body 2601, a display unit 2602, a case 2603, an external connection
port 2604, a remote control receiving unit 2605, an image receiving
unit 2606, a battery 2607, an audio input unit 2608, operation keys
2609 etc. The luminescent device manufactured in accordance with
the present invention can be applied to the display unit 2602. The
video camera shown in FIG. 16G can be completed by the present
invention.
[0230] FIG. 16H shows a cellular phone, which is composed of a main
body 2701, a case 2702, a display unit 2703, an audio input unit
2704, an audio output unit 2705, operation keys 2706, an external
connection port 2707, an antenna 2708, etc. The luminescent device
manufactured in accordance with the present invention can be
applied to the display unit 2703. If the display unit 2703 displays
white letters on black background, the cellular phone consumes less
power. The cellular phone shown in FIG. 16H can be completed by the
present invention.
[0231] If the luminance of luminescence materials is raised in
future, the luminescent device can be used in front or rear
projectors by enlarging outputted light that contains image
information through a lens or the like and projecting the
light.
[0232] These electric appliances now display with increasing
frequency information sent through electronic communication lines
such as the Internet and CATV (cable television), especially,
animation information. Since luminescence materials have very fast
response speed, the luminescent device is suitable for animation
display.
[0233] According to the invention, it is not necessary to rotate
the board and therefore, a vapor deposition device capable of
dealing with a large area board can be provided. Further, board
holding means using a large area board and suitable for multiface
cutting can be provided.
[0234] Further, according to the invention, a distance between a
board and a vapor deposition source holder can be shortened and
small-sized formation of a vapor deposition device can be achieved.
Further, since the vapor deposition device is small-sized, a
sublimated vapor deposition material adhering to an inner wall or
an adherence preventive shield at inside of a film forming chamber
can be reduced and a vapor deposition material can effectively be
utilized.
[0235] Further, the invention can provide a fabricating device
continuously arranged with a plurality of film forming chambers for
carrying out vapor deposition processings. Since parallel
processings are carried out at the plurality of film forming
chambers in this way, throughput of a luminescent device is
promoted.
[0236] Further, the invention can provide a fabricating system
capable of installing a vessel filled with a vapor deposition
material directly to a vapor deposition device without exposing to
atmosphere. According to the invention, handling of a vapor
deposition material is facilitated and an impurity can be avoided
from mixing to the vapor deposition material. According to the
fabricating system, a vessel filled with a material maker can
directly be installed to a vapor deposition device and therefore,
oxygen or water can be prevented from adhering to a vapor
deposition material and further ultra high purity formation of a
luminescent element in the future can be dealt with.
* * * * *