U.S. patent application number 10/422284 was filed with the patent office on 2003-11-06 for highly efficient capacitor structures with enhanced matching properties.
Invention is credited to Aparicio, Roberto, Hajimiri, Seyed-Ali.
Application Number | 20030206389 10/422284 |
Document ID | / |
Family ID | 26926203 |
Filed Date | 2003-11-06 |
United States Patent
Application |
20030206389 |
Kind Code |
A1 |
Hajimiri, Seyed-Ali ; et
al. |
November 6, 2003 |
Highly efficient capacitor structures with enhanced matching
properties
Abstract
The present specification discloses highly efficient capacitor
structures. One embodiment of the present invention is referred to
herein as a vertical parallel plate (VPP) structure. In accordance
with this embodiment, a capacitor structure comprises a plurality
of vertical plates. The vertical plates are substantially parallel
to each other, and each vertical plate comprises multiple
conducting strips. These conducting strips are substantially
parallel to each other and are connected to each other by one or
more vias. The vertical plates are alternately connected to each
other, creating a first portion of the vertical plates and a second
portion of the vertical plates, such that the first portion of the
vertical plates forms a first terminal of the capacitor structure,
and the second portion of the vertical plates forms a second
terminal of the capacitor structure. Either slotted vias or
individual vias can be used to connect the conducting strips.
Another embodiment of the present invention is referred to herein
as a vertical bars (VB) structure. In accordance with this
embodiment of the present invention, a capacitor structure
comprises a plurality of rows of vertical bars, wherein within each
row, the vertical bars are parallel to each other, and each
vertical bar comprises multiple conducting patches. These
conducting patches are connected to each other by one or more vias.
The rows of vertical bars form a first direction and a second
direction, wherein the second direction is orthogonal to the first
direction. In the first direction, the vertical bars are
alternately connected to each other, creating a first portion of
the vertical plates and a second portion of the vertical plates.
The first portion of the vertical plates forms a section of the
first terminal of the capacitor structure, and the second portion
of the vertical plates forms a section of the second terminal of
the capacitor structure. In the second direction, the vertical bars
are alternately connected to each other, creating a third portion
of the vertical plates and a fourth portion of the vertical plates.
The third portion of the vertical plates forms a remaining section
of the first terminal of the capacitor structure, and the fourth
portion of the vertical plates forms a remaining section of the
second terminal of the capacitor structure. Either slotted vias or
individual vias can be used to connect the conducting strips.
Inventors: |
Hajimiri, Seyed-Ali;
(Pasadena, CA) ; Aparicio, Roberto; (Pasadena,
CA) |
Correspondence
Address: |
Chris J. Rourk
Akin, Gump, Strauss, Hauer & Feld, L.L.P.
Suite 4100
1700 Pacific Avenue
Dallas
TX
75201-4675
US
|
Family ID: |
26926203 |
Appl. No.: |
10/422284 |
Filed: |
April 24, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10422284 |
Apr 24, 2003 |
|
|
|
09927761 |
Aug 9, 2001 |
|
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60232651 |
Sep 14, 2000 |
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Current U.S.
Class: |
361/306.1 ;
257/E21.012 |
Current CPC
Class: |
H01L 28/82 20130101 |
Class at
Publication: |
361/306.1 |
International
Class: |
H01G 004/228 |
Claims
What is claimed:
1. A capacitor structure, comprising: a plurality of vertical
plates, wherein the vertical plates are substantially parallel to
each other, and wherein each vertical plate comprises multiple
conducting strips; the conducting strips are substantially parallel
to each other and are connected to each other by one or more vias;
and the vertical plates are alternately connected to each other,
creating a first portion of the vertical plates and a second
portion of the vertical plates, such that the first portion of the
vertical plates forms a first terminal of the capacitor structure,
and the second portion of the vertical plates forms a second
terminal of the capacitor structure.
2. The capacitor structure of claim 1, wherein slotted vias are
used to connect conducting strips.
3. The capacitor structure of claim 1, wherein individual vias are
used to connect conducting strips.
4. The capacitor structure of claim 1, wherein interleaving vias
are used to connect conducting strips.
5. The capacitor structure of claim 1, wherein the conducting
strips are metal conducting strips.
6. The capacitor structure of claim 1, wherein the conducting
strips are poly-crystalline silicon strips.
7. The capacitor structure of claim 1, wherein each vertical plate
is located a predefined lateral distance from an adjacent vertical
plate.
8. A capacitor structure, comprising: a plurality of rows of
vertical bars, wherein within each row, the vertical bars are
substantially parallel to each other, and each vertical bar
comprises multiple conducting patches; the conducting patches are
connected to each other by one or more vias; the rows of vertical
bars form a first direction and a second direction, wherein the
second direction is orthogonal to the first direction; in the first
direction, the vertical bars are alternately connected to each
other, creating a first portion of the vertical plates and a second
portion of the vertical plates, such that the first portion of the
vertical plates forms a section of the first terminal of the
capacitor structure, and the second portion of the vertical plates
forms a section of the second terminal of the capacitor structure;
and in the second direction, the vertical bars are alternately
connected to each other, creating a third portion of the vertical
plates and a fourth portion of the vertical plates, such that the
third portion of the vertical plates forms a remaining section of
the first terminal of the capacitor structure, and the fourth
portion of the vertical plates forms a remaining section of the
second terminal of the capacitor structure.
9. The capacitor structure of claim 8, wherein slotted vias are
used to connect conducting strips.
10. The capacitor structure of claim 8, wherein individual vias are
used to connect conducting strips.
11. The capacitor structure of claim 8, wherein the conducting
strips are metal conducting strips.
12. The capacitor structure of claim 8, wherein the conducting
strips are poly-crystalline silicon strips.
13. The capacitor structure of claim 8, wherein each vertical bar
is located at a predefined lateral distance from an adjacent
vertical bar.
14. The capacitor structure of claim 8, wherein each patch has a
lateral size and the lateral size affects the effective series
resistance of the capacitor structure.
15. The capacitor structure of claims 8, wherein each patch has a
lateral size and the lateral size affects the quality factor of the
capacitor structure.
16. A capacitor structure, comprising: in a first direction, a
first layer comprising, a plurality of first layer vertical plates,
wherein the first layer vertical plates are substantially parallel
to each other, and wherein each first layer vertical plate
comprises multiple first layer conducting strips; the first layer
conducting strips are substantially parallel to each other and are
connected to each other by one or more first layer vias; the first
layer vertical plates are alternately connected to each other,
creating a first portion of the first layer vertical plates and a
second portion of the first layer vertical plates, such that the
first portion of the first layer vertical plates forms a section of
the first terminal of the capacitor structure and the second
portion of the first layer vertical plates forms a section of the
second terminal of the capacitor structure; in a second direction,
wherein the second direction is orthogonal to the first direction,
a second layer comprising, a plurality of second layer vertical
plates, wherein the second layer vertical plates are substantially
parallel to each other, and wherein each second layer vertical
plate comprises multiple second layer conducting strips; the second
layer conducting strips are substantially parallel to each other
and are connected to each other by one or more second layer vias;
the second layer vertical plates are alternately connected to each
other, creating a first portion of the second layer vertical plates
and a second portion of the second layer vertical plates, such that
the first portion of the second layer vertical plates forms a
remaining section of the first terminal of the capacitor structure,
and the second portion of the second layer vertical plates forms a
remaining section of the second terminal of the capacitor
structure; and whereby, the second layer is overlying the first
layer in a top view.
17. The capacitor structure of claim 16, wherein slotted vias are
used to connect conducting strips.
18. The capacitor structure of claim 16, wherein individual vias
are used to connect conducting strips.
19. The capacitor structure of claim 16, wherein the conducting
strips are metal conducting strips.
20. The capacitor structure of claim 16, wherein the conducting
strips are poly-crystalline silicon strips.
21. The capacitor structure of claim 16, wherein each first layer
vertical plate is located a predefined lateral distance from an
adjacent first layer vertical plate, and wherein each second layer
vertical plate is located a predefined lateral distance from an
adjacent second layer vertical plate.
22. A capacitor structure, comprising: more than two layers of
vertical plates, wherein each layer is positioned in the following
manner, in a first direction, a previous layer comprising, a
plurality of previous layer vertical plates, wherein the previous
layer vertical plates are substantially parallel to each other, and
wherein each previous layer vertical plate comprises multiple
previous layer conducting strips; the previous layer conducting
strips are substantially parallel to each other and are connected
to each other by one or more previous layer vias; the previous
layer vertical plates are alternately connected to each other,
creating a first portion of the previous layer vertical plates and
a second portion of the previous layer vertical plates, such that
the first portion of the previous layer vertical plates forms a
section of the first terminal of the capacitor structure and the
second portion of the previous layer vertical plates forms a
section of the second terminal of the capacitor structure; in a
second direction, wherein the second direction is orthogonal to the
first direction, a subsequent layer comprising, a plurality of
subsequent layer vertical plates, wherein the subsequent layer
vertical plates are substantially parallel to each other, and
wherein each subsequent layer vertical plate comprises multiple
subsequent layer conducting strips; the subsequent layer conducting
strips are substantially parallel to each other and are connected
to each other by one or more subsequent layer vias; the subsequent
layer vertical plates are alternately connected to each other,
creating a first portion of the subsequent layer vertical plates
and a second portion of the subsequent layer vertical plates, such
that the first portion of the subsequent layer vertical plates
forms a remaining section of the first terminal of the capacitor
structure, and the second portion of the subsequent layer vertical
plates forms a remaining section of the second terminal of the
capacitor structure; and whereby, the subsequent layer is overlying
the previous layer in a top view.
23. The capacitor structure of claim 22, wherein slotted vias are
used to connect conducting strips.
24. The capacitor structure of claim 22, wherein individual vias
are used to connect conducting strips.
25. The capacitor structure of claim 22, wherein the conducting
strips are metal conducting strips.
26. The capacitor structure of claim 22, wherein the conducting
strips are poly-crystalline silicon strips.
27. The capacitor structure of claim 22, wherein each first layer
vertical plate is located a predefined lateral distance from an
adjacent first layer vertical plate, and wherein each second layer
vertical plate is located a predefined lateral distance from an
adjacent second layer vertical plate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This invention claims the benefit of Provisional Application
No. 60/232,651, filed on Sep. 14, 2000. The contents of that
application are incorporated by reference herein.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention generally relates to using lateral
field capacitor structures to increase the capacitance density per
unit area in integrated circuit capacitors, and in particular to
using novel lateral-field optimal high efficient capacitor
structures that maximize the flux usage in the interlayer metal
separation region, as well as, in the metal layer region.
[0004] 2. Description of Related Art
[0005] Capacitors are essential elements in integrated circuits,
such as sample and holds, analog-to-digital (A/D) and
digital-to-analog (D/A) converters, switched-capacitor and
continuous-time filters, as well as, radio frequency (RF) blocks.
In many of these applications, capacitors consume a large portion
of a chip's area. Thus, the capacitor's area efficiency is of
primary importance. In analog applications, the other desired
properties for capacitors are close matching of adjacent
capacitors, linearity, small bottom-plate capacitor, and to a
lesser degree, the absolute accuracy of the value (i.e.,
tolerance). In RF applications, it is essential for the capacitors
to have self-resonance frequencies, well in excess of the frequency
of interest and large quality factors (Q). Good linearity and large
breakdown voltage are the other two desired properties for a good
RF capacitor.
[0006] Several approaches have been taken to improve the area
efficiency of capacitors. For example, nonlinear capacitors with
high capacitance density, such as junction or gate oxide capacitors
have been used for a long time in applications where the linearity
and the quality factor, Q, of the capacitors are not important.
Unfortunately, these capacitors need a dc bias and are strongly
process and temperature dependent. In high precision circuits, such
as data converters, their use is limited to bypass and coupling
capacitors, or varactors in RF circuits.
[0007] On the other hand, metal- to-metal and metal-to-poly
capacitors have very good linearity and quality factors, Q.
However, they suffer from a low capacitance density. The low
capacitance density manly arises from large
metal-to-metal/metal-to-poly vertical spacing that determines the
capacitance in the horizontal parallel plate (HPP) structure 100,
shown in FIG. 1. Unfortunately, in today's process technologies,
this large vertical spacing does not shrink as fast as the lateral
separation to avoid excessive crosstalk between the digital metal
lines in different layers. Thus, the parallel plate capacitors
consume a larger fractional die area. Although an extra processing
step involving depositing a thin layer of insulator between two
metal or poly layers can mitigate the vertical spacing problem to
some extent, this extra step is not available in many of the
standard silicon-based technologies. Even if such special capacitor
layers were available, the parallel plate structure does not
necessarily result in the highest possible capacitance density
[0008] The capacitance density can be improved by structures that
exploit both lateral and vertical electric field components. A well
known example of such structures is the interdigitated parallel
wire structure 200 (also know as Horizontal Bars or HB), as shown
in FIG. 2. Recently, several new structures were suggested as
methods of obtaining higher capacitance per unit area. These
structures include: a quasi-fractal structure 208; a woven
structure 202 connected using vias 210 (the top view 204 of the
woven structure 202 is also shown); and a second woven structure
206 without via 210 interconnections. The new structures 200, 202,
206, and 208 essentially demonstrate the same linearity as the HPP
structure 100 (shown in FIG. 1), including both the
metal-to-metal/poly capacitors. The only difference between the new
structures 200, 202, 206, and 208 and the HPP structure 100 (shown
in FIG. 1) is the higher capacitance densities. These structures
200, 202, 206, and 208 also provide lower bottom-plate capacitance,
since more field lines end up on the adjacent metal line, as
opposed to the substrate
[0009] Despite these advantages, quasi-fractal structures 208 and
woven structures 202 and 206 have not been widely used in the
signal path of analog circuits because predicting their absolute
capacitor value can be complicated and time consuming. Also, it is
not clear that the quasi-fractal structures 208 and woven
structures 202 and 206 are always advantageous over the more
regular structures, such as the interdigitated parallel wire
structures 200.
[0010] Thus, there is a need in the art for new capacitor
structures with high efficiency, which demonstrate higher
capacitance density and superior matching properties, as compared
to the standard HPP structures 100 (shown in FIG. 1) and previously
reported quasi fractal structures 208 (shown in FIG. 2) and woven
structures 202 and 206 (shown in FIG. 2).
SUMMARY OF THE INVENTION
[0011] To overcome the limitations in the prior art described
above, and to overcome other limitations that will become apparent
upon reading and understanding the present specification, the
specification discloses several capacitor structures that
demonstrate high capacitance density, superior matching,
tolerances, and self-resonance frequencies.
[0012] The first embodiment of the present invention is referred to
herein as a vertical parallel plate (VPP) structure. In accordance
with the first embodiment, a capacitor structure comprises a
plurality of vertical plates. The vertical plates are substantially
parallel to each other, and each vertical plate comprises multiple
conducting strips. These conducting strips are substantially
parallel to each other and are connected to each other by one or
more vias. The vertical plates are alternately connected to each
other, creating a first portion of the vertical plates and a second
portion of the vertical plates, such that the first portion of the
vertical plates forms a first terminal of the capacitor structure,
and the second portion of the vertical plates forms a second
terminal of the capacitor structure. Either slotted vias,
interleaving vias or individual vias can be used to connect the
conducting strips.
[0013] The second embodiment of the present invention is referred
to herein as a vertical bars (VB) structure. In accordance with the
second embodiment of the present invention, a capacitor structure
comprises a plurality of rows of vertical bars, wherein within each
row, the vertical bars are parallel to each other, and each
vertical bar comprises multiple conducting patches. These
conducting patches are connected to each other by one or more vias.
The rows of vertical bars form a first direction and a second
direction, wherein the second direction is orthogonal to the first
direction. In the first direction, the vertical bars are
alternately connected to each other, creating a first portion of
the vertical plates and a second portion of the vertical plates.
The first portion of the vertical plates forms a section of the
first terminal of the capacitor structure, and the second portion
of the vertical plates forms a section of the second terminal of
the capacitor structure. In the second direction, the vertical bars
are alternately connected to each other, creating a third portion
of the vertical plates and a fourth portion of the vertical plates.
The third portion of the vertical plates forms a remaining section
of the first terminal of the capacitor structure, and the fourth
portion of the vertical plates forms a remaining section of the
second terminal of the capacitor structure.
[0014] Each patch has a lateral size. The lateral size affects the
effective series resistance of the capacitor structure. The lateral
size also affects the quality factor of the capacitor
structure.
[0015] The fourth embodiment is similar to the first embodiment,
and it is referred to herein as a two-layer VPP. The two-layer VPP
structure comprises two VPP structures, wherein the first VPP is
positioned in a first direction. The second VPP is located on top
of the first VPP, and the second VPP is positioned in a second
direction The second direction is orthogonal to the first
direction.
[0016] The fifth embodiment is also similar to the first
embodiment, and it is referred to herein as a multiple-layer VPP.
The multiple-layer VPP structure comprises multiple (more than two)
VPP structures, wherein a previous VPP is positioned in a first
direction. A subsequent VPP is located on top of the previous VPP,
and the subsequent VPP is positioned in a second direction. The
second direction is orthogonal to the first direction.
[0017] Each of the above-described embodiments have utility for
providing a capacitor structure with high efficiency, which results
in higher capacitance density and superior matching and tolerance
properties, as compared to prior art capacitor structures.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Referring now to the drawings in which like reference
numbers represent corresponding parts throughout:
[0019] FIG. 1 represents a prior art parallel plate structure;
[0020] FIG. 2 represents prior art structures that exploit both
lateral and vertical electrical fields;
[0021] FIG. 3 represents an exemplary vertical parallel plate (VPP)
structure, in accordance with the present invention;
[0022] FIG. 4 represents an exemplary vertical parallel plate (VPP)
structure implemented using stacked vias, in accordance with the
present invention;
[0023] FIG. 5 represents an exemplary vertical parallel plate (VPP)
structure implemented using interleaved vias, in accordance with
the present invention;
[0024] FIG. 6 represents an exemplary vertical bar (VB) structure,
in accordance with the present invention;
[0025] FIG. 7 represents an exemplary modified VB structure, in
accordance with the present invention;
[0026] FIG. 8 represents an exemplary two-layer VPP structure, in
accordance with the present invention;
[0027] FIG. 9 represents an exemplary multi-layer VPP structure, in
accordance with the present invention;
[0028] FIG. 10 shows a graph of simulated capacitance densities per
unit volume as a function of minimum lateral spacing;
[0029] FIG. 11 represents the dimensions of the metal lines;
[0030] FIG. 12 shows parallel plate structures normal to the
cartesian axis;
[0031] FIG. 13 represents the ortho-normal capacitance
decomposition into lateral and vertical parallel plates,
[0032] FIG. 14 shows the relative capacitance variations of the
VPP, HB, and HPP structures;
[0033] FIG. 15 shows a graph of the high-frequency one-port
measurements of the VPP structure, the VB structure, and the HPP
structure; and
[0034] FIG. 16 shows the relative capacitance variations of the
VPP, VB and HPP structures.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMNETS
[0035] Several lateral-field, optimal-high efficient capacitor
structures are described. Each of these capacitor structures
maximizes the flux usage in the interlayer metal separation region,
as well as, in the metal layer region.
[0036] FIG. 3 illustrates a capacitor structure that is referred to
herein as a vertical parallel plate (VPP) structure 300. The VPP
structure 300 has several vertical plates 302. Each of the vertical
plates 302 are substantially parallel to each other, and located a
predefined lateral distance from an adjacent vertical plate
302.
[0037] The vertical plates 302 comprise multiple conducting strips
306. The conducting strips 306 can be either metal conducting
strips or poly crystalline silicon strips. The conducting strips
306 are substantially parallel to each other, and they are
connected to each other by one or more vias 304. The vias 304 can
either be slotted vias, interleaving vias or individual vias.
[0038] The vertical plates 302 are alternately connected, such that
all the shaded vertical plates 302 are connected to each other,
creating a first portion of the vertical plates 302; and all the
clear vertical plates 302 are connected to each other, creating a
second portion of the vertical plates 302. The first portion of the
vertical plates 302 form a terminal of the capacitor structure, and
the second portion of the vertical plates 302 form the other
terminal of the capacitor structure.
[0039] To simplify the explanation of the figures and to show the
terminals of the capacitors, some of the vertical plates 302 in
FIG. 3 are shaded. Similar shading is used in FIG. 4 through FIG.
9. This shading does not, in any way, limit or restrict the scope
of the present invention.
[0040] The VPP structure 300 maximizes the lateral flux usage by
using vertical plates 302 made out of conducting strips 306. The
conducting strips 306 are connected by using vias 304 that maximize
the lateral area of the vertical plates 302. The via 304
interconnections increase the effective lateral area of the
vertical plates 302, and lowers the series electrical resistance by
the introduction of alternative current paths, resulting in a
higher quality factor, Q, for a given capacitor value. Moreover,
due to the current flowing in opposite direction in the vertical
plates 302, the inherent inductance is decreased. Also, as the VPP
structure 300 attains higher capacitance density, smaller physical
dimensions are achieved for a given capacitor value, thus,
resulting in a shorter average signal path, and therefore, having a
higher self-resonance frequency. Even though slotted vias 304 may
not be supported in all process technologies, close approximation
to these structures can be fabricated by using individual vias 304,
as shown in FIG. 4 or using interleaving vias 304, as shown in FIG.
5. The top metal layer, which is usually thicker, and has different
design rules, can be used to make the connection between the
capacitor terminal and outside circuitry. Low series resistance is
assured by the multiple placement of vias 304 and several signal
path cross-connections.
[0041] FIG. 6 illustrates a structure, referred to herein as a
vertical bar (VB) structure 600. The VB structure 600 has several
rows of vertical bars 602. The vertical bars 602 are substantially
parallel to each other, and the vertical bars 602 are located at a
predefined lateral distance from each other.
[0042] Each vertical bar 602 has multiple conducting patches 604
(or squares). The conducting patches 604 can be metal conducting
patches or poly-crystalline silicon conducting patches. Each of the
conducting patches 604 have a lateral size. The lateral size
affects the effective series resistance of the capacitor structure
600. The lateral size also affects the quality factor, Q, of the
capacitor structure 600. The conducting patches 604 are connected
to each other by one or more vias 606. The vias 606 can be either
slotted via or individual vias.
[0043] The length of the vertical bars 602 is limited by the number
and thickness of metal layers. The VB structure 600 can show a
larger series resistance compared to the VPP 300 structure.
However, the series resistance of the. VB structure 600 is mainly
determined by the via resistance. A large number of small
capacitors in parallel form the total capacitance of the structure,
and hence, the overall series resistance is the parallel
combination of these resistors, which will be much smaller than an
individual via 606.
[0044] The VB structure 600 has a higher capacitance density than
the VPP structure 400 because the VB structure 600 utilizes the
electric field in both the lateral and vertical dimensions. To
illustrate, in FIG. 6, arrow 608 represents the lateral direction
and arrow 610 represents the vertical direction. It is noted that
the lateral direction is orthogonal to the vertical direction. In
the lateral direction, the vertical bars 602 are alternately
connected, such that all the shaded vertical bars 602 are connected
to each other, creating a first portion of the vertical bars 602;
and all the clear vertical bars 602 are connected to each other,
creating a second portion of the vertical plates 602. The first
portion of the vertical bars 602 form a section of the first
terminal of a capacitor structure, and the second portion of the
vertical bars 602 form the other terminal of the capacitor
structure.
[0045] In the vertical direction, the vertical bars 602 are
alternately connected, such that all the shaded vertical bars 602
are connected to each other, creating a third portion of the
vertical bars 602; and all the clear vertical bars 602 are
connected to each other, creating a fourth portion of the vertical
plates 602. The third portion of the vertical bars 602 form the
remaining section of the first terminal of the capacitor structure,
and the fourth portion of the vertical bars 602 form the remaining
section of the other terminal of the capacitor structure.
[0046] To simplify the explanation of the figures, and for
illustration purposes only, some of the vertical bars 602 in FIG. 6
are shaded. This shading does not in any way limit or restrict the
scope of the present invention.
[0047] FIG. 7 illustrates another structure, referred to herein as
a modified VB structure 700. The modified VB structure 700 extends
the width of the vertical bars in one lateral dimension and is a
compromise between the VPP structure 300 (shown in FIG. 3) and the
VB structure 600 (shown in FIG. 6). Like the VB structure 600, the
modified VB structure 700 utilizes the electric field in both the
lateral and vertical directions, therefore the modified VB
structure 700 has a higher capacitance density than the VPP
structure 300. For the modified VB structure 700, the lateral size
of each square 704 affects the effective series resistance of the
modified VB structure 700. The lateral size of each square 704 also
affects the quality factor, Q, of the modified VB structure
700.
[0048] FIG. 8 illustrates the fourth structure, referred to herein
as a two-layer vertical parallel plate VPP structure 800. The
two-layer VPP structure 800 comprises two VPP structures 802,
wherein the first VPP structure 802 is positioned in a first
direction. The second VPP structure 802 is located on top of the
first VPP structure 802, and the second VPP sructure 802 is
positioned in a second direction. The second direction is
orthogonal to the first direction. It is noted that the two VPP
structures 802 can have different types of vias 804. For example,
the first VPP structure 802 could have individual vias 804, and the
second VPP structure 802 could have interleaving vias 804. Of
course, those skilled in the art will recognize that any
combination of via types could be used without exceeding the scope
of the present invention.
[0049] FIG. 9 illustrates a fifth structure, referred to herein as
a multiple-layer vertical parallel plate VPP structure 900. The
multiple-layer VPP structure 900 comprises multiple (more than two)
VPP structures 902, wherein a previous VPP structure 902 is
positioned in a first direction. A subsequent VPP structure 902 is
located on top of the previous VPP structure 902, and the
subsequent VPP structure 902 is positioned in a second direction.
The second direction is orthogonal to the first direction. The VPP
structures 902 are positioned on top of each other in the
above-described manner, until all of the VPP structures 902 have
been stacked. It is noted that each VPP structure 902 can have
different types of vias 904 or each VPP structure 902 can have the
same type of vias 904. In FIG. 9, each of the VPP structures 902
have slotted vias 904. Those skilled in the art will recognize that
any combination of vias 904 can be used without departing from the
scope of the present invention.
[0050] The capacitor value of the standard, horizontal parallel
plate capacitor 100 of FIG. 1 is primarily determined by the oxide
thickness. On the other hand, the exact capacitor values of the VPP
300 and VB 600 capacitor structures are determined by lithography
and etching. These two processes are quite accurate in today's
process technologies. It is therefore reasonable to suspect that
the lateral component of these capacitors should be more repeatable
and have smaller variation across a wafer. In this case, it is
clear that any structure combining the lateral and vertical field
component will suffer from the accuracy of the vertical capacitance
component, which will lead to inferior matching and tolerance
properties. Practically, all of the existing integrated capacitive
structures use the vertical fields, and hence, cannot achieve the
best possible accuracy. This hypothesis can be verified
experimentally, as discussed later.
[0051] To gain more insight into the effectiveness of lateral and
vertical field usage in metal-to-metal capacitor structures, the
capacitance densities for each of the capacitor structures
discussed above were simulated using a simulator developed for this
purpose, and assuming a larger number of metal layers. FIG. 10
shows a graph 1000 of the simulation results. The horizontal axis
1002 represents the minimum lateral dimensions, and the vertical
axis 1004 represents the capacitance per unit volume.
[0052] The simulated structures include the following: the HPP
structure 100 (shown in FIG. 1), the VPP structure 300 (shown in
FIG. 3), the woven structure 202 and the woven structure without
vias 206 (both shown in FIG. 2), parallel wires 200 (also referred
to as interdigitated and HB, shown in FIG. 2), the quasi-fractal
structure 208 (shown in FIG. 2), and the VB structure 600 (shown in
FIG. 6), and the Cubes 3D structure (not shown).
[0053] A theoretical framework is necessary to understand the
comparison of the various capacitor structures. The following
paragraphs will reveal that the capacitance of any arbitrary
capacitive structure can be decomposed into three components that
are associated with three orthogonal spatial dimensions. This
decomposition can be used to find the theoretical upper bounds for
the total capacitance of rectangular (Manhattan) structures. This
can be done by noting that the total electrostatic energy, U.sub.E,
in a capacitor, C, is given by 1 U E = C V 2 2 ( 1 )
[0054] where .DELTA.V is the voltage drop across its two terminals.
The capacitance of an arbitrary structure can be calculated by
integrating the electrostatic energy density, u, over the entire
dielectric volume to obtain the total stored electrostatic energy,
U.sub.E, for a given voltage drop, .DELTA.V, between the two
terminals of the capacitor, i.e., 2 C = 2 U E V 2 = 2 V 2 Vol u ( r
) v ( 2 )
[0055] where {right arrow over (r)} is the position vector and dv
is the differential unit of volume. For an isotropic dielectric
material, the electrostatic energy density is given by 3 u ( r ) =
E ( r ) D ( r ) D ( r ) 2 = 0 r 2 E 2 ( r ) = 0 r 2 [ E x 2 ( r ) +
E y 2 ( r ) + E z 2 ( r ) ] = u x ( r ) + u y ( r ) + u z ( r ) ( 3
)
[0056] where {right arrow over (E)} and {right arrow over (D)} are
the electric and displacement vectors, .epsilon..sub.0 is the
permittivity of free space, .epsilon..sub.r is the relative
permittivity of the dielectric, and u.sub.x, u.sub.y, and u.sub.z
are the electrostatic energy densities due to the electric field
components along the three Cartesian axes, namely, E.sub.x,
E.sub.y, and E.sub.z respectively. Therefore, the density
(capacitance per unit volume) can be calculated by integrating the
sum of the three electrostatic field energy density components over
the dielectric volume, i.e., 4 c = C Vol = 1 Vol 2 V 2 [ Vol u x (
r ) v + Vol u y ( r ) v + Vol u z ( r ) v ] = c x + c y + c z ( 4
)
[0057] where c is the capacitance density of the structure (in
Farad per cubic meter) and c.sub.x, c.sub.y, and c.sub.z are the
capacitance densities due to the electric field components E.sub.x,
E.sub.y, and E.sub.z, respectively.
[0058] Now consider a process technology with a minimum lateral
spacing of L.sub.min 1100, minimum metal width of W.sub.min 1102, a
vertical spacing between two adjacent metal layers, t.sub.ox 1104
and a metal thickness, t.sub.metal 1106 as shown in FIG. 11. The
total capacitance density, c, cannot exceed the sum of the maximums
of its individual components, namely, c.sub.x,max, c.sub.y,max, and
c.sub.z,max. In other words, we have to maximize the capacitance
density due to each component of the electric field separately, to
obtain an upper bound on the density. FIG. 12 shows that the
capacitance contribution of the electric field along the x axis,
c.sub.x, (with no constraint on the contributions of other field
components) can be maximized by using a parallel plate structure
1200 with minimum plate thickness, W.sub.min 1202, and minimum
spacing, L.sub.min 1204, perpendicular to the x axis. The
capacitive components along they, and z axes can be maximized in a
similar fashion by using minimum spacing parallel plate structures
normal to these axes (1206 and 1208). Therefore, an upper bound on
the total capacitance density can be obtained by adding the
individual maximums of the capacitance density components, i.e., 5
c max = c x , max + c y , max + c z , max = 0 r [ 2 L min ( L min +
W min ) + 1 t ox ( t ox + t metal ) ] ( 5 )
[0059] This is a capacitance per unit volume, and can be easily
translated to capacitance per unit area for a known number of metal
layers. This maximum in the capacitance density will be referred to
as Theoretical Limit 1 (TL1). Equation (5) defines an upper bound
for the capacitance density of any metallic structure and can serve
as a reference for comparison of various capacitive structures.
[0060] Although the horizontal and vertical parallel plate
capacitor structures of FIG. 12 have the maximum horizontal and
vertical field usage, respectively, they cannot be implemented in
the same spatial location simultaneously. This makes it impossible
to achieve the maximum electric field usage in the x, y, and z
dimensions at the same time, and therefore equation (5), while
being correct, is too conservative. The orthogonality of the
electric field components implies that the horizontal and vertical
parallel plate capacitance densities, c.sub.x, c.sub.y, and c.sub.z
may form an orthogonal basis for decomposition of capacitance
densities as illustrated in FIG. 13. This orthogonal decomposition
can be used to obtain a new tighter upper bound for the capacitance
density of structures with rectangular (Manhattan) boundaries. FIG.
13 shows that the maximum capacitance is given by the magnitude of
the vector sum of c.sub.x,max, c.sub.y,max, and c.sub.z,max. The
maximum capacitance density for any given process technology will
be given by: 6 c max = c x , max 2 + c y , max 2 + c z , max 2 = o
r 2 L min 2 ( L min + W min ) 2 + 1 t ox 2 ( t ox + t metal ) 2 ( 6
)
[0061] which will be referred to as Theoretical Limit 2 (TL2).
[0062] Returning to FIG. 10, the graph 1000 shows the simulated
capacitance densities per unit volume as a function of the minimum
lateral spacing, L.sub.min. Equal lateral metal spacing 1100 and
width 1102 (both shown in FIG. 11) was assumed, i.e.,
L.sub.min=W.sub.min. Both t.sub.ox 1104 and t.sub.metal 1106 (both
shown in FIG. 11) are also kept constant at 8 .mu.m. This is in
accordance with the observation that lateral spacings keep scaling
down as lithography advances, while the vertical dimensions do not
scale at the same rate. Even though the graph 1000 is for
particular values of t.sub.ox 1104 and t.sub.metal 1106, it can
easily be used for other vertical spacings through a simple
scaling, as long as, t.sub.ox=t.sub.metal and L.sub.min=W.sub.min.
TL1 1006 and TL2 1008 are also plotted in the graph 1000. As can be
seen, none of the capacitance densities exceed either TL1 1006 or
TL2 1008.
[0063] Two important regions can be identified in the simulation
results of FIG. 10. For large lateral spacings, i.e.,
L.sub.min>>t.sub.ox (right hand side of the graph 1000), the
capacitance density reaches plateaus as the lateral fields become
inconsequential and the capacitance is dominated by the vertical
fields. As can be seen, the HPP structure 1010 has the best
performance in this region due to its optimal usage of vertical
fields, and the VPP 1012 and VB 1014 continuously degrade due to
the lack of any vertical field component. Other structures fall in
between these two extremes and reach a capacity limit controlled by
their vertical-to-lateral field usage efficiency.
[0064] At the other extreme, when the minimum lateral spacing is
much smaller than the vertical separation, i.e.
L.sub.mim<<t.sub.ox (left hand side of the graph), the
capacitance densities of the lateral field structures become
inversely proportional to L.sub.min.sup.2 because the lateral plate
spacing decreases linearly with lateral shrinkage, resulting in a
linear increase in the capacitance per plate. In addition, the
number of plates per unit volume grows linearly with decreasing
L.sub.min due to the smaller metal width and spacing, resulting in
an inverse L.sub.min.sup.2 dependence. It is therefore desirable to
choose a capacitor with maximum lateral field usage, as the feature
sizes shrink. Such a choice will result in a capacitor with minimum
vertical field usage due to the inherent trade-off between lateral
and vertical field utilization. In other words, the lateral field
usage can only be increased by introducing dielectric regions
between metal lines in the same layer, which in turn results in
loss of the vertical component. As can be seen, the HPP structure
1010 has the worst performance in this region, and the VPP 1012 and
VB 1014 attain the highest capacitance density.
[0065] In particular, for the case where L.sub.min=W.sub.min=0.1
.mu.m and t.sub.ox=t.sub.metal=1 .mu.m (or for any other case where
the minimum lateral dimensions are ten times smaller than the
vertical dimensions), VB 1014 and VPP 1012 achieve a remarkable
capacitance density of 88% and 68% when compared to TL2 1008. In
contrast, the woven 1018 and quasi-fractal structure 1016 show only
an efficiency of 48% and 25% respectively. Therefore, TL2 1008 can
be used as a means of efficiency comparison.
[0066] A two metal layer CMOS technology with an additional thick
metal layer is used to fabricate the VPP 300, interdigitated or
Horizontal Bars (HB) 200 and HPP 100 structures that occupy 0.12
mm.sup.2, 0.33 mm.sup.2,and 0.19 mm.sup.2, respectively. The two
lower metal layers have L.sub.min=W.sub.min=0.5 .mu.m,
t.sub.ox=0.95 .mu.m, and t.sub.metal=0.63 .mu.m. The performance
numbers for these structures are summarized in Table 1. As can be
seen, the VPP capacitor achieves a factor of 4.4 capacitance
density improvement over the standard HPP using only two metal
layers, but also for equal capacitance values demonstrate a higher
self-resonance frequency than the HPP structure. This is based on
the size-normalized self-resonance frequencies of the structures
listed in Table 1. In terms of series resistance, the VPP capacitor
has a series resistance, r.sub.s, of 0.57 .OMEGA. comparable to an
r.sub.s of 0.55 .OMEGA. for the HPP capacitor (shown in FIG. 1). It
is noteworthy that the commonly used interdigitated (or HB)
structure 200 (shown in FIG. 2) is inferior to the newly introduced
VPP capacitor 300 (shown in FIG. 3), in capacitance density,
quality factor, and self-resonance frequency.
[0067] To investigate the tolerance properties of the VPP capacitor
300 (shown in FIG. 3), the capacitance of these three structures
were measured across twenty-two different sites, at different
locations, on two quarters of two different 8-inch wafers. In FIG.
14, a histogram 1400 shows the relative capacitance value
distribution across one of the quarter-wafers. The standard
deviations of the capacitance, normalized to the average value for
these three structures, are also shown in Table 1. It can be easily
seen that the absolute capacitance accuracy of the VPP 300
capacitor is approximately an order of magnitude better than the
conventional HPP 100. Comparison of the measurements on two
different wafers also shows that wafer-to-wafer capacitance
variation of the purely lateral structures is also improved
significantly due to the higher repeatability of the lithography.
Finally, due to the high breakdown voltage of the dielectric, the
measured breakdown voltages of the implemented capacitors are in
excess of 350V, as can be seen in the Table 1.
1TABLE 1 Measurement Results (First Set) Structure Cap.Density (c)
[aF/.mu.m.sup.2] Ave (C.sub.ave) [pF] Std. Dev. (.sigma..sub.c)
[fF] 7 c C ave f.sub.res[GHz] Q @1 GHz 8 res ( fixed L ) a ( C =
6.94 pF ) [ GHz ] 9 f res ( scaled L ) b ( C = 6.94 pF ) [ GHz ] Rs
(.OMEGA.) Break- Down [Volts] VPP 158.3 18.99 103 0.0054 3.65 14.5
6.04 9.99 0.57 355 HB 101.5 33.5 315 0.0094 1.1 8.6 2.42 5.31 0.55
380 HPP 35.8 6.94 427 0.0615 6.0 21 6.0 6.0 1.1 690
.sup.aNormalized self-resonance frequency calculated for a
capacitance of 6.94 pF (the value of the HPP) assuming that only
the capacitor changes and that the inductor does not scale.
.sup.bNormalized self-resonance frequency calculated for a
capacitance of 6.94 pF (the value of the HPP) scaling both the
capacitor and the inductor with size.
[0068] A second set of capacitors were fabricated in a purely
digital CMOS 5-metal layer process technology with
L.sub.min=W.sub.min=0.24 .mu.m, t.sub.ox=0.7 .mu.m, and
t.sub.metal=0.53 .mu.m. The implemented capacitors include a 5
metal layer HPP 100, a 5 metal layer VPP 300, and a 4 metal layer
modified VB 700 structures. To perform a fair comparison, the value
of the three different capacitor types are designed to be equal. A
1 pF and a 10 pF version of each structure were fabricated in the
same die to provide an unbiased comparison of the structures'
capacitance density, self-resonant frequency, tolerance and
matching properties.
[0069] The summary of the measurements for the 1 pF capacitors are
shown in Table 2. For the sake of comparison, the performance
measures of a 1 pF Metal-Insulator-Metal (MIM) capacitor are also
included in Table 2. Due to the lack of any MIM capacitor in the
purely digital CMOS technology used, these performance measures are
obtained from the design manual information for an MIM capacitor
for a very similar process technology with L.sub.min=0.28 .mu.m and
mixed signal capabilities.
[0070] Due to the high lateral field efficiency of the new proposed
structures, the VPP 300 and VB 600 capacitors show 7.43 and 6.29
times more capacitance density than the standard multiplate HPP 100
of FIG. 1, respectively, which are the highest reported to date.
This corresponds to a capacitance density of 1.51 fF/.mu.m.sup.2.
As can be seen, the capacitance density of the VPP capacitor is
even 37% higher than the capacitance density of the MIM
capacitor.
2TABLE 2 Measurement Results (Second Set - 1 pF capacitors)
Structure Cap.Density (c) [aF/.mu.m.sup.2] Ave C.sub.ave) [pF] Area
[.mu.m.sup.2] Cap. Enhancement Std. Dev. (.sigma..sub.c) [fF] 10 c
C ave f.sub.res[GHz] 11 Measured Q @ 1 GHz Break- Down [Volts] V
1512.2 1.01 669.9 7.4 5.06 0.0050 >40 83.2 128 VB 1281.3 1.07
839.7 6.3 14.19 0.0132 37.1 48.7 124 HPP 203.6 1.09 5378.2 1.0
26.11 0.0238 21 63.8 500 MIM 1100 1.05 960.9 5.4 11 95
[0071] Because of the multiple via connections and the large number
of vertical plates connected in parallel, the VPP 300 structure
presents a quality factor even higher than that of the HPP 100,
whereas the quality factor of the VB 600 structure is degraded to
some extent because of the relatively high via resistance of the
process technology, as summarized in Table 2.
[0072] As the proposed structures attain higher capacitance
densities, their physical dimensions are smaller and hence show
higher self-resonance frequencies. The admittance vs frequency
measurement 1500 of FIG. 15 shows a self-resonance frequency in
excess of 40 GHz for the 1 pF VPP 1502 and VB 1504 capacitors. This
is twice the self-resonance frequency of the HPP capacitor 1506,
and 4 times higher than that of the MIM capacitor.
[0073] To verify the earlier hypothesis of better tolerance and
matching properties of the purely lateral structures, the
capacitance of capacitors of same values implemented using
different structures were measured across 37 usable sites of an
8-inch wafer. The standard deviation normalized to the average
value of each 1 pF structure is shown in Table 2. The histogram
1600 of FIG. 16 shows the variation of the three different
capacitor structures across the wafer. As can be seen, the VPP 300
structure presents almost five times better capacitance tolerance
than the HPP 100 structure across the wafer.
[0074] Although the tolerance of capacitors is an important
property to quantify, in many analog applications, the parameter of
more significance is the ratio between two adjacent capacitors. To
confirm the better matching properties of the new structures, the
ratio of adjacent 10 pF and 1 pF capacitors of the same type, on
the same site, were compared across the wafer. The variations of
this ratio normalized to its average is shown as
.sigma..sub.r/r.sub.ave. The VPP 300, VB 600, and HPP 100
capacitors show a .sigma..sub.r/r.sub.ave of 0.6%, 1%, and 1.3%,
respectively. Due to the higher accuracy of the lithography
process, the two new lateral field structures present better
matching properties than the standard horizontal parallel plate
capacitor or HPP 100, as suggested earlier. It is noteworthy that
in practice, an accurately defined ratio is achieved by using
multiple parallel capacitors of the same size and shape.
[0075] Finally, the summary of the measurements for the 10 pF
capacitors are shown in Table 3. For the sake of comparison, Table
3 also includes the estimated performance measures of a 10 pF MIM
capacitor. As can be seen, the VPP 300 and VB 600 capacitors show
8.0 and 6.6 times more capacitance density than the 10 pF standard
multiplate HPP 100 of FIG. 1. This corresponds to a 34% higher
capacitance density of the VPP 300 capacitor when compared to the
MIM. The self-resonance frequencies of the proposed structures are
in excess of 11 GHz, which is almost twice the self-resonance
frequency of the HPP 100 capacitor, and approximately 3 times
higher than that of the MIM. As can be seen, the 10 pF VPP 300 and
VB 600 capacitors presents almost 3 times better capacitance
tolerance than the HPP 100 structure across the wafer.
3TABLE 3 Measurement Results (Second Set - 10 pF capacitors)
Structure Cap.Density (c) [aF/.mu.m.sup.2] Ave C.sub.ave) [pF] Area
[.mu.m.sup.2] Cap. Enhancement Std. Dev. (.sigma..sub.c) [fF] 12 c
C ave f.sub.res[GHz] 13 Measured Q @ 1 GHz Break- Down [Volts] VPP
1480.0 11.46 7749 8.0 73.43 0.0064 11.3 26.6 125 VS 1223.2 10.60
8665 6.6 73.21 0.0069 11.1 17.8 121 HPP 183.6 10.21 55615 1.0
182.14 0.0178 6.17 23.5 495 MIM 1100 10.13 9216 6.0 4.05 25.6
[0076] A new theoretical framework which shows the capacity limits
of different capacitor structures was presented. This new framework
can be used to evaluate the performance of the existing capacitive
structures and leads to two purely lateral capacitor structures,
namely VPP 300 and VB 600. These structures demonstrate: higher
capacitance density, better tolerance and matching properties, and
higher self-resonance frequency than previously reported capacitor
structures, MIN and standard HPP capacitors, while maintaining a
comparable quality factor. These two new structures are standard
CMOS compatible and do not need an extra processing step, as is the
case with special MIM capacitors.
[0077] Although the invention has been described in detail with
reference only to the presently preferred embodiments, those of
ordinary skill in the art will appreciate that various
modifications can be made without departing from the invention.
Accordingly, the invention is defined only by the following
claims.
* * * * *