U.S. patent application number 10/425740 was filed with the patent office on 2003-10-30 for magnetic transducer, thin film magnetic head and method of manufacturing the same.
This patent application is currently assigned to TDK Corporation. Invention is credited to Terunuma, Koichi.
Application Number | 20030202294 10/425740 |
Document ID | / |
Family ID | 28793383 |
Filed Date | 2003-10-30 |
United States Patent
Application |
20030202294 |
Kind Code |
A1 |
Terunuma, Koichi |
October 30, 2003 |
Magnetic transducer, thin film magnetic head and method of
manufacturing the same
Abstract
Provided are a magnetic transducer, a thin film magnetic head
and a method of manufacturing the same which can improve efficiency
of heat dissipation. An MR element functioning as a magnetic
transducer comprises: a nonmagnetic metal layer; a free layer
formed on one surface of the nonmagnetic metal layer; a pinned
layer formed on the other surface of the nonmagnetic metal layer;
and an antiferromagnetic layer formed on a surface of the pinned
layer, the surface being opposite to a surface in contact with the
nonmagnetic metal layer. One end face of the free layer, the
nonmagnetic metal layer, the pinned layer and the antiferromagnetic
layer forms a medium facing surface forming a surface facing an
external magnetic field. A tapered surface inclined to the medium
facing surface is formed on the end face opposite to the medium
facing surface of a stack comprising the free layer, the
nonmagnetic metal layer, the pinned layer and the antiferromagnetic
layer. A distance between the medium facing surface of the
antiferromagnetic layer and the opposite face is longer than a
distance between the medium facing surface of the free layer and
the opposite face. Thus, a sufficient amount of heat dissipation
from the antiferromagnetic layer can be ensured. Therefore, heating
of the magnetic transducer can be prevented.
Inventors: |
Terunuma, Koichi; (Chuo-ku,
JP) |
Correspondence
Address: |
OLIFF & BERRIDGE, PLC
P.O. BOX 19928
ALEXANDRIA
VA
22320
US
|
Assignee: |
TDK Corporation
Chuo-ku
JP
|
Family ID: |
28793383 |
Appl. No.: |
10/425740 |
Filed: |
April 30, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10425740 |
Apr 30, 2003 |
|
|
|
09584371 |
May 31, 2000 |
|
|
|
Current U.S.
Class: |
360/313 ;
G9B/5.114; G9B/5.139 |
Current CPC
Class: |
B82Y 10/00 20130101;
G11B 5/40 20130101; G11B 5/313 20130101; B82Y 25/00 20130101; G11B
5/398 20130101; G11B 5/3116 20130101; G11B 5/3903 20130101; G11B
2005/3996 20130101; G11B 5/3967 20130101 |
Class at
Publication: |
360/313 |
International
Class: |
G11B 005/39 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 3, 1999 |
JP |
11-156751 |
Jun 10, 1999 |
JP |
11-163354 |
Claims
What is claimed is:
1. A magnetic transducer comprising: a magneto-sensitive layer for
sensing an external magnetic field; and a heat dissipation layer
formed adjacent to the magneto-sensitive layer.
2. A magnetic transducer according to claim 1, wherein the heat
dissipation layer is formed adjacent to at least one surface of the
magneto-sensitive layer.
3. A magnetic transducer according to claim 1, wherein a thickness
of the heat dissipation layer is from 1 nm to 100 nm inclusive.
4. A magnetic transducer according to claim 1, wherein the heat
dissipation layer is made of a material having higher electrical
resistance than that of the magneto-sensitive layer.
5. A magnetic transducer according to claim 1, wherein the heat
dissipation layer is made of a nonmagnetic metal film.
6. A magnetic transducer according to claim 5, wherein the heat
dissipation layer is made of a material including any one or more
of Zr, Bi, Ta, Pt or Pd.
7. A magnetic transducer according to claim 1, wherein a surface
area of the heat dissipation layer is larger than that of the
magneto-sensitive layer.
8. A magnetic transducer according to claim 1, wherein the
magneto-sensitive layer and the heat dissipation layer are
configured so that each of one end faces thereof forms a surface
facing the external magnetic field.
9. A magnetic transducer according to claim 8, wherein a distance
between the one end face of the heat dissipation layer and the
opposite face is longer than a distance between the one end face of
the magneto-sensitive layer and the opposite face.
10. A magnetic transducer according to claim 8, wherein the face
opposite to the one end face of the magneto-sensitive layer is
inclined to the one end face.
11. A magnetic transducer according to claim 1 further comprising:
an insulating layer provided between the magneto-sensitive layer
and the heat dissipation layer.
12. A magnetic transducer according to claim 11, wherein a
thickness of the insulating layer is from 2 nm to 30 nm
inclusive.
13. A magnetic transducer according to claim 1, wherein the
magneto-sensitive layer includes a magnetoresistive film whose
electrical resistance changes in response to the external magnetic
field.
14. A magnetic transducer according to claim 13, wherein the
magneto-sensitive layer comprises: a nonmagnetic layer; a soft
magnetic layer formed adjacent to one surface of the nonmagnetic
layer; a ferromagnetic layer formed adjacent to the other surface
of the nonmagnetic layer; and an antiferromagnetic layer formed
adjacent to a surface of the ferromagnetic layer, the surface being
opposite to a surface adjacent to the nonmagnetic layer.
15. A magnetic transducer according to claim 14, wherein the heat
dissipation layer is adjacent to the antiferromagnetic layer or the
soft magnetic layer.
16. A thin film magnetic head comprising a magnetic transducer,
wherein the magnetic transducer has a structure according to claim
1.
17. A thin film magnetic head according to claim 16 further
comprising: two magnetic shield layers located so as to face each
other with the magnetic transducer in between, for magnetically
shielding the magnetic transducer.
18. A thin film magnetic head according to claim 16 further
comprising: an inductive magnetic transducer having: two magnetic
layers magnetically coupled to each other and each having a
recording-medium-facing part including a magnetic pole, the
magnetic poles facing each other with a gap layer in between, the
magnetic layers being each formed of at least one layer; and thin
film coils arranged between the two magnetic layers.
19. A magnetic transducer comprising: a magneto-sensitive portion
for sensing an external magnetic field; and a heat dissipation
means for dissipating heat generated in the magneto-sensitive
portion.
20. A magnetic transducer according to claim 19, wherein the heat
dissipation means is provided as part of the magneto-sensitive
portion.
21. A magnetic transducer according to claim 20, wherein the heat
dissipation means is formed with antiferromagnetic layer which is
part of the magneto-sensitive portion.
22. A magnetic transducer according to claim 19, wherein the
heat-dissipation means is provided separately from the
magneto-sensitive portion.
23. A magnetic transducer according to claim 22, wherein the heat
dissipation means is formed with a higher resistance layer made of
a material having higher electrical resistance than that of the
magneto-sensitive portion.
24. A magnetic transducer comprising: a magneto-sensitive layer for
sensing an external magnetic field; and a higher resistance layer
provided separately from the magneto-sensitive layer, the higher
resistance layer being made of a material having higher electrical
resistance than that of the magneto-sensitive layer.
25. A magnetic transducer according to claim 24, wherein the higher
resistance layer is made of a nonmagnetic metal material.
26. A magnetic transducer according to claim 25, wherein the higher
resistance layer is made of a material including any one or more of
Zr, Bi, Ta, Pt or Pd.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The invention relates to a magnetic transducer, a thin film
magnetic head using the same, and a method of manufacturing the
same.
[0003] 2. Description of the Related Art
[0004] Recently, an improvement in performance of a thin film
magnetic head has been sought in accordance with an increase in a
surface recording density of a hard disk drive. A composite thin
film magnetic head, which has a stacked structure comprising a
reproducing head having a magnetoresistive element (hereinafter
sometimes referred to as an MR element) that is a type of magnetic
transducer and a recording head having an inductive magnetic
transducer, is widely used as the thin film magnetic head.
[0005] MR elements include an AMR element using a magnetic film (an
AMR film) exhibiting an anisotropic magnetoresistive effect (an AMR
effect), a GMR element using a magnetic film (a GMR film)
exhibiting a giant magnetoresistive effect (a GMR effect), and so
on.
[0006] The reproducing head using the AMR element is called an AMR
head or simply an MR head, and the reproducing head using the GMR
element is called a GMR head. The AMR head is used as the
reproducing head whose surface recording density exceeds 1 gigabit
per square inch, and the GMR head is used as the reproducing head
whose surface recording density exceeds 3 gigabits per square inch.
As the GMR film, a "multilayered type (antiferromagnetic type)"
film, an "inductive ferromagnetic type" film, a "granular type"
film, a "spin valve type" film and the like are proposed. Of these
types of films, the spin valve type GMR film is considered to have
a relatively simple structure, to exhibit a great change in
resistance even under a low magnetic field and to be suitable for
mass production.
[0007] FIG. 54 is a sectional side view of a general structure of a
composite thin film magnetic head 800 (hereinafter simply referred
to as a thin film magnetic head) using an MR element using a spin
valve type GMR film (hereinafter referred to as a spin valve film).
The thin film magnetic head 800 has a substrate 801 made of, for
example, Al.sub.2O.sub.3. TiC (altic). A bottom shield layer 803
made of a magnetic material is stacked on the substrate 801 with an
insulating layer 802 made of, for example, Al.sub.2O.sub.3
(alumina) in between. A bottom shield gap layer 804 and a top
shield gap layer 806 made of, for example, Al.sub.2O.sub.3 or AlN
(aluminum nitride) are stacked on the bottom shield layer 803. A
stack 805, which is the above-mentioned spin valve film, is buried
between the bottom shield gap layer 804 and the top shield gap
layer 806.
[0008] A top shield layer 807 (also serving as a bottom pole) made
of a magnetic material is formed on the top shield gap layer 806. A
top pole layer 810 is located facing the top shield layer 807 with
a write gap layer 808 made of, for example, Al.sub.2O.sub.3 in
between. Thin film coils 811 buried in an insulating layer 809 are
formed between the top shield layer 807 and the top pole layer 810.
The bottom shield layer 803, the bottom shield gap layer 804, the
stack 805 and the top shield gap layer 806 compose a reproducing
head for reading out information from a magnetic recording medium.
The top shield layer 807, the write gap layer 808, the insulating
layer 809, the top pole layer 810 and the thin film coils 811
compose a recording head for writing information on the magnetic
recording medium. A surface indicated by reference symbol S in FIG.
54 corresponds to a medium facing surface (an air bearing surface:
ABS) of the thin film magnetic head 800 facing the magnetic
recording medium such as a hard disk.
[0009] The structure of the stack 805 which is the spin valve film
will be described with reference to FIGS. 55 and 56. FIG. 55 is a
cross sectional view of the stack 805 parallel to the medium facing
surface S (i.e., a cross sectional view taken along the line LV-LV
of FIG. 54). FIG. 56 is a cross sectional view of the stack 805
perpendicular to the medium facing surface S (i.e., an enlarged
view of the stack 805 shown in FIG. 54). The spin valve film is
basically composed of a multilayered film having a stacked
structure comprising four layers: an antiferromagnetic layer 851
made of, for example, PtMn (platinum-manganese alloy); a pinned
layer 852 which is a magnetic layer made of, for example, Co
(cobalt); a nonmagnetic metal layer 853 made of, for example, Cu
(copper); and a free layer 854 made of, for example, NiFe
(permalloy). When heat treatment takes place at, for example, 250
degrees centigrade in a state in which the pinned layer 852 and the
antiferromagnetic layer 851 are stacked, the orientation of
magnetization of the pinned layer 852 is fixed in, for example, the
direction indicated by reference symbol Y in FIG. 56 by an exchange
anisotropic magnetic field generated by exchange coupling occurring
on an interface between the antiferromagnetic layer 851 and the
pinned layer 852. Since the free layer 854 is separated from the
antiferromagnetic layer 851 by the nonmagnetic metal layer 853, the
orientation of magnetization thereof is not fixed but changes in
accordance with an external magnetic field.
[0010] Reproduction of information in the MR element using the
above-mentioned spin valve film, i.e., detection of a signal
magnetic field from the magnetic recording medium is performed in
the following manner. First, a sense current, which is a constant
direct current, is passed through the pinned layer 852, the
nonmagnetic metal layer 853 and the free layer 854 in, for example,
the direction indicated by reference symbol X in FIG. 55. On
receiving the signal magnetic field from the magnetic recording
medium, the orientation of magnetization of the free layer 854
changes. Electrical resistance changes in accordance with a
relative angle between the orientation of magnetization of the free
layer 854 and the (fixed) orientation of magnetization of the
pinned layer 852, and thus information is detected as a voltage
change caused by a change in electrical resistance.
[0011] Generally, a distance between the medium facing surface S of
the MR element and the opposite surface is called an MR height
(MR-H). In the case of the MR element using the spin valve film,
the MR height is determined in accordance with the distance between
the medium facing surface S of the free layer and the opposite
face. A read track width Tw of the MR element decreases as a
recording density increases. Also, the MR height of the MR element
tends to decrease as the read track width decreases. For example,
the MR height is equal to 0.6 .mu.m when the read track width of
the MR element is equal to 1 .mu.m, while the MR height is equal to
0.3 .mu.m when the read track width of the MR element is equal to
0.5 .mu.m.
[0012] As described above, a size reduction of the MR element
advances. However, with the advance in the size reduction, the
following problem arises due to heat generated in the MR element.
That is, heat generated in the MR element is dissipated into the
top and bottom shield layers (the shield layers 803 and 807 shown
in FIG. 54) through the top and bottom shield gap layers. However,
when the reproducing track width and the MR height of the MR
element are reduced, a heat dissipation area of the MR element
(i.e., the product of the reproducing track width and the MR
height) is considerably reduced. Heat generation by the MR element
incident to the reduction in the heat dissipation area becomes a
factor that causes electro migration (a phenomenon in which a local
void is created because of metal atoms migrating through a
conductor) or interlayer diffusion. As a result, a problem exists:
the longevity of the MR element decreases.
[0013] Japanese Patent Application Laid-open Nos. Hei 6-223331 and
10-222816 disclose a technique in which layers (a shield layer, an
insulating layer, a substrate, etc.) around an MR element are made
of a material having high thermal conductivity so that heat
generated in the MR element is efficiently dissipated. However,
when the heat dissipation area of the MR element decreases with the
above-mentioned size reduction of the MR element, the improvement
in efficiency of heat dissipation cannot be expected much even if
the layers around the MR element have high thermal
conductivity.
SUMMARY OF THE INVENTION
[0014] The invention is designed to overcome the foregoing
problems. It is an object of the invention to provide a magnetic
transducer, a thin film magnetic head and a method of manufacturing
the same which can improve efficiency of heat dissipation.
[0015] A magnetic transducer of first aspect of the invention
comprises: a nonmagnetic layer; a soft magnetic layer formed
adjacent to one surface of the nonmagnetic layer and having the
orientation of magnetization freely changing in accordance with an
external magnetic field; a ferromagnetic layer formed adjacent to
the other surface of the nonmagnetic layer; and an
antiferromagnetic layer formed adjacent to a surface of the
ferromagnetic layer, the surface being opposite to a surface in
contact with the nonmagnetic layer, wherein the soft magnetic
layer, the nonmagnetic layer, the ferromagnetic layer and the
antiferromagnetic layer are configured so that one end surface
thereof forms a surface facing the external magnetic field, and a
distance between the one end surface of the antiferromagnetic layer
and the opposite surface is longer than at least a distance from
the one end face of the soft magnetic layer to the opposite
face.
[0016] In the magnetic transducer of first aspect of the invention,
electrical resistance changes in accordance with a change in the
orientation of magnetization of the soft magnetic layer due to the
external magnetic field (e.g., a signal magnetic field from a
recording medium or the like). Thus, magnetic information is
detected in accordance with a voltage change (a read output)
incident to the change in resistance. Joule's heat generated by a
sense current passing through the magnetic transducer is dissipated
through the antiferromagnetic layer having the longer distance
between the one end face and the opposite face.
[0017] Preferably, a difference between the distance between the
one end face of the antiferromagnetic layer and the opposite face
and the distance between the one end face of the soft magnetic
layer and the opposite surface is from 0.05 .mu.m to 1.0 .mu.m
inclusive. When the difference between the distances is less than
0.05 .mu.m, a heat dissipation effect is little improved. When the
difference between the distances is more than 1.0 .mu.m, asymmetry
of a plus output and a minus output of the read output
increases.
[0018] Moreover, the surface opposite to the one end face of the
soft magnetic layer, the nonmagnetic layer, the ferromagnetic layer
and the antiferromagnetic layer may be inclined to the one end
face. The formation of the inclined surface makes it possible to
obtain with relative ease the above-described configuration in
which the distance between the one end face of the
antiferromagnetic layer and the opposite face is longer than at
least the distance between the one end face of the soft magnetic
layer and the opposite face.
[0019] Moreover, the face opposite to the one end face of the soft
magnetic layer may be parallel to the one end face, and the surface
opposite to the one end face of the nonmagnetic layer, the
ferromagnetic layer and the antiferromagnetic layer may be inclined
to the one end face. When each end face of the soft magnetic layer
is vertical as described above, an MR height can be more precisely
determined.
[0020] A thin film magnetic head of first aspect of the invention
comprises a magnetic transducer including: a nonmagnetic layer; a
soft magnetic layer formed adjacent to one surface of the
nonmagnetic layer; a ferromagnetic layer formed adjacent to the
other surface of the nonmagnetic layer; and an antiferromagnetic
layer formed adjacent to a surface of the ferromagnetic layer, the
surface being opposite to a surface in contact with the nonmagnetic
layer, wherein the soft magnetic layer, the nonmagnetic layer, the
ferromagnetic layer and the antiferromagnetic layer are configured
so that one end face thereof forms a surface facing a recording
medium, and a distance between the one end face of the
antiferromagnetic layer and the opposite face is longer than at
least a distance from the one end face of the soft magnetic layer
and the opposite face.
[0021] Preferably, the thin film magnetic head of first aspect of
the invention further comprises two magnetic shield layers located
so as to face each other with the magnetic transducer in between,
for magnetically shielding the magnetic transducer. In this case,
Joule's heat generated in a magnetoresistive film is transferred to
one magnetic shield layer through the antiferromagnetic layer.
[0022] Moreover, the thin film magnetic head of first aspect of the
invention may have: two magnetic layers magnetically coupled to
each other and each having a recording-medium-facing part including
a magnetic pole, the magnetic poles facing each other with a gap
layer in between, the magnetic layers being each formed of at least
one layer; and thin film coils arranged between the two magnetic
layers. A current is passed through the thin film coils, whereby a
magnetic field (across the gap layer) is generated at the magnetic
poles. Thus, information is written on a magnetic recording medium
by the magnetic field.
[0023] A method of manufacturing a magnetic transducer of first
aspect of the invention comprises the steps of forming on a
substrate a stack including an antiferromagnetic layer, a
ferromagnetic layer, a nonmagnetic layer and a soft magnetic layer;
and patterning the stack so that a distance between one end face of
the antiferromagnetic layer and the opposite face is longer than at
least a distance between one end face of the soft magnetic layer
(on the side of the one end face of the antiferromagnetic layer)
and the opposite face. According to the manufacturing method,
obtained is the stack comprising the antiferromagnetic layer, the
ferromagnetic layer, the nonmagnetic layer and the soft magnetic
layer, which are formed on the substrate in this order.
[0024] In the method of manufacturing a magnetic transducer of
first aspect of the invention, the antiferromagnetic layer, which
has the longer distance between the one end face and the opposite
face (than at least the soft magnetic layer), is formed. Joule's
heat generated by the current passing through the stack is
dissipated through the antiferromagnetic layer.
[0025] Preferably, the patterning step uses ion milling. In this
case, an angle of inclination of an inclined surface of the stack
may be controlled by adjusting at least either an angle of
incidence of ions for ion milling or a thickness of a resist
mask.
[0026] A method of manufacturing a thin film magnetic head of first
aspect of the invention comprising a magnetic transducer of the
invention comprises: a step of forming the magnetic transducer
including the steps of: forming on a substrate a stack including an
antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic layer
and a soft magnetic layer; and patterning the stack so that a
distance between one end face of the antiferromagnetic layer and
the opposite face is longer than at least a distance between one
end face of the soft magnetic layer (on the side of the one end
face of the antiferromagnetic layer) and the opposite face.
[0027] Preferably, the method of manufacturing a thin film magnetic
head of first aspect of the invention further comprises the steps
of forming a first magnetic shield layer; forming a first shield
gap layer on the first magnetic shield layer; forming a magnetic
transducer on the first shield gap layer; forming a second shield
gap layer on the magnetic transducer; and forming a second magnetic
shield layer on the second shield gap layer.
[0028] A magnetic transducer of second aspect of the invention
comprises: a magneto-sensitive layer for sensing an external
magnetic field; and a heat dissipation layer formed adjacent to the
magneto-sensitive layer. Magneto-sensitive layers include, for
example, a magnetoresistive film whose electrical resistance
changes in accordance with the external magnetic field, and the
like. Magnetoresistive films include, for example, an AMR film, a
GMR film, a TMR film (a tunnel junction type magnetoresistive
film), and so on. A state in which the layers are adjacent to each
other refers to not only a state in which the layers are in direct
contact with each other but also a state in which the layers adjoin
each other with another layer in between.
[0029] The magnetic transducer of second aspect of the invention,
Joule's heat generated by the current passing through the
magneto-sensitive layer is transferred by heat transfer or the like
to peripheral components of the magnetic transducer through the
heat dissipation layer formed adjacent to the magneto-sensitive
layer.
[0030] Preferably, a thickness of the heat dissipation layer is
from 1 nm to 100 nm inclusive. Thus, much heat dissipation effect
is obtained, and symmetry of the plus output and the minus output
of the output is improved. Moreover, the heat dissipation layer may
be made of a nonmagnetic metal film (for example, containing Zr,
Bi, Ta, Pt or Pd) having higher resistance than resistance of the
magneto-sensitive layer. Since the heat dissipation layer is of
high resistance, the sense current passing through the
magneto-sensitive layer is prevented from being diverted to the
heat dissipation layer. Moreover, a surface area of the heat
dissipation layer may be larger than that of the magneto-sensitive
layer. The larger the surface area of the heat dissipation layer
is, the larger a contact area of the heat dissipation layer and the
magneto-sensitive layer and a contact area of the heat dissipation
layer and external components (the magnetic shield layers, etc.)
are. The larger the contact areas become, the higher the efficiency
of heat dissipation becomes. Moreover, a distance between one end
face of the heat dissipation layer (the surface facing the external
magnetic field) and the opposite face may be longer than a distance
between one end face of the magneto-sensitive layer (the surface
facing the external magnetic field) and the opposite surface.
Moreover, an insulating layer may be provided between the
magneto-sensitive layer and the heat dissipation layer. The
insulating layer is located between the magneto-sensitive layer and
the heat dissipation layer, whereby the sense current passing
through the magneto-sensitive layer can be prevented from being
diverted to the heat dissipation layer.
[0031] Moreover, the magneto-sensitive layer may comprise a
magnetoresistive film whose electrical resistance changes in
accordance with the external magnetic field. More particularly, the
magnetoresistive film may comprise: a nonmagnetic layer; a soft
magnetic layer formed adjacent to one surface of the nonmagnetic
layer and having the orientation of magnetization freely changing
in accordance with the external magnetic field; a ferromagnetic
layer formed adjacent to the other surface of the nonmagnetic
layer; and an antiferromagnetic layer formed adjacent to a surface
of the ferromagnetic layer, the surface being opposite to a surface
in contact with the nonmagnetic layer. When the magnetic field from
the magnetic recording medium is applied to the soft magnetic
layer, the orientation of magnetization of the soft magnetic layer
is changed. Thus, electrical resistance changes in response to a
relative angle between the changed orientation of magnetization of
the soft magnetic layer and the (fixed) orientation of
magnetization of the ferromagnetic layer. Consequently, the voltage
change incident to the change in electrical resistance is detected.
Joule's heat generated by the current passing through the soft
magnetic layer, the nonmagnetic layer and the ferromagnetic layer
is transferred to the outside through the heat dissipation layer.
The heat dissipation layer can be formed adjacent to the
antiferromagnetic layer or the soft magnetic layer.
[0032] A thin film magnetic head of second aspect of the invention
comprising a magnetic transducer, the magnetic transducer has any
one of the above-described structures. Preferably, another thin
film magnetic head of the invention comprises two magnetic shield
layers located so as to face each other with the magnetic
transducer in between, for magnetically shielding the magnetic
transducer. Thus, Joule's heat generated by the current passing
through the magneto-sensitive layer of the magnetic transducer is
transferred to one magnetic shield layer through the heat
dissipation layer.
[0033] Moreover, the thin film magnetic head of second aspect of
the invention may have: two magnetic layers magnetically coupled to
each other and each having a recording-medium-facing part including
a magnetic pole, the magnetic poles facing each other with a gap
layer in between, the magnetic layers being each formed of at least
one layer; and thin film coils arranged between the two magnetic
layers. A current is passed through the thin film coils, whereby
the magnetic field is generated at the magnetic poles. Therefore,
information can be written on the magnetic recording medium by the
magnetic field.
[0034] A method of manufacturing a magnetic transducer of second
aspect of the invention comprises the step of: forming the heat
dissipation layer and the magneto-sensitive layer so that the heat
dissipation layer and the magneto-sensitive layer are adjacent to
each other.
[0035] Preferably, the method of manufacturing a magnetic
transducer of second aspect of the invention comprises the steps
of: forming the heat dissipation layer on a base; and forming the
magneto-sensitive layer on the heat dissipation layer. According to
the manufacturing method, obtained is the magnetic transducer in
which the heat dissipation layer and the magneto-sensitive layer
are stacked on the substrate in this order. Moreover, another
method of manufacturing a magnetic transducer of the invention may
further comprise the step of forming another heat dissipation layer
on the magneto-sensitive layer (formed on the heat dissipation
layer). According to the manufacturing method, obtained is the
magnetic transducer in which the heat dissipation layer, the
magneto-sensitive layer and another heat dissipation layer are
stacked on the substrate in this order. Moreover, another method of
manufacturing a magnetic transducer of the invention may comprise
the steps of: forming the magneto-sensitive layer on the base; and
forming the heat dissipation layer on the magneto-sensitive layer.
According to the manufacturing method, obtained is the magnetic
transducer in which the magneto-sensitive layer and the heat
dissipation layer are stacked on the substrate in this order. The
heat dissipation layer can be formed by sputtering, for
example.
[0036] The method of manufacturing a magnetic transducer of second
aspect of the invention may further comprise the step of: forming
an insulating layer between the heat dissipation layer and the
magneto-sensitive layer. According to the manufacturing method,
obtained is the magnetic transducer having a structure in which the
insulating layer is interposed between the heat dissipation layer
and the magneto-sensitive layer. The insulating layer can be formed
by, for example, oxidizing a surface of the heat dissipation
layer.
[0037] A method of manufacturing a thin film magnetic head of
second aspect of the invention, which is a method of manufacturing
a thin film magnetic head with a magnetic transducer, comprises a
step of forming the magnetic transducer by using any one of the
above-described methods of manufacturing a magnetic transducer.
[0038] Preferably, the step of forming the magnetic transducer
includes the steps of forming a first magnetic shield layer;
forming a first shield gap layer on the first magnetic shield
layer; forming a magnetic transducer on the first shield gap layer;
forming a second shield gap layer on the magnetic transducer; and
forming a second magnetic shield layer on the second shield gap
layer is performed by using any one of the above-described methods
of manufacturing a magnetic transducer.
[0039] Other and further objects, features and advantages of the
invention will appear more fully from the following
description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0040] FIG. 1 is a cross sectional view of a thin film magnetic
head according to a first embodiment of the invention, showing a
cross section perpendicular to a medium facing surface;
[0041] FIG. 2 is a cross sectional view of an MR element of the
thin film magnetic head shown in FIG. 1, showing a cross section
parallel to the medium facing surface;
[0042] FIG. 3 is a cross sectional view of a stack of the MR
element shown in FIG. 2, showing a cross section perpendicular to
the medium facing surface;
[0043] FIG. 4 is a cross sectional view for describing a step of a
method of manufacturing the thin film magnetic head according to
the first embodiment of the invention;
[0044] FIG. 5 is a cross sectional view for describing a step
following the step of FIG. 4;
[0045] FIG. 6 is a cross sectional view for describing a step
following the step of FIG. 5;
[0046] FIG. 7 is a cross sectional view for describing a step
following the step of FIG. 6;
[0047] FIG. 8 is a cross sectional view for describing a step
following the step of FIG. 7;
[0048] FIG. 9 is a cross sectional view for describing a step
following the step of FIG. 8;
[0049] FIG. 10 is an enlarged sectional view for describing a step
of the method of manufacturing the thin film magnetic head
according to the first embodiment of the invention, showing a cross
section parallel to the medium facing surface;
[0050] FIG. 11 is an enlarged sectional view for describing a step
following the step of FIG. 10;
[0051] FIGS. 12A and 12B are enlarged sectional views for
describing a step following the step of FIG. 11;
[0052] FIG. 13 is an enlarged sectional view for describing a step
following the step of FIG. 12;
[0053] FIG. 14 is an enlarged sectional view for describing a step
following the step of FIG. 13;
[0054] FIG. 15 is a plan view of the thin film magnetic head
according to the first embodiment of the invention;
[0055] FIG. 16 is a plot of experimental results of a heat
dissipation effect of the first embodiment of the invention;
[0056] FIG. 17 is a plot of experimental results of the heat
dissipation effect and asymmetry of the first embodiment of the
invention;
[0057] FIG. 18 is a conceptual illustration of the asymmetry;
[0058] FIG. 19 is a cross sectional view of a stack of a thin film
magnetic head according to a second embodiment of the invention,
showing a cross section perpendicular to the medium facing
surface;
[0059] FIG. 20 is an enlarged sectional view for describing a step
of a method of manufacturing the stack shown in FIG. 19;
[0060] FIG. 21 is an enlarged sectional view for describing a step
following the step of FIG. 20;
[0061] FIG. 22 shows an example of another method of stacking
layers of a stack;
[0062] FIG. 23 is a cross sectional view of a thin film magnetic
head according to a third embodiment of the invention, showing a
cross section perpendicular to the medium facing surface;
[0063] FIG. 24 is a cross sectional view of an MR element of the
thin film magnetic head shown in FIG. 23, showing a cross section
parallel to the medium facing surface;
[0064] FIG. 25 is a cross sectional view of the MR element shown in
FIG. 24, showing a cross section perpendicular to the medium facing
surface;
[0065] FIG. 26 is a plan view of the MR element shown in FIG.
24;
[0066] FIG. 27 is a cross sectional view for describing a step of a
method of manufacturing the thin film magnetic head according to
the third embodiment of the invention;
[0067] FIG. 28 is a cross sectional view for describing a step
following the step of FIG. 27;
[0068] FIG. 29 is a cross sectional view for describing a step
following the step of FIG. 28;
[0069] FIG. 30 is a cross sectional view for describing a step
following the step of FIG. 29;
[0070] FIG. 31 is a cross sectional view for describing a step
following the step of FIG. 30;
[0071] FIG. 32 is a cross sectional view for describing a step
following the step of FIG. 31;
[0072] FIG. 33 is a cross sectional view for describing a step
following the step of FIG. 32;
[0073] FIGS. 34A and 34B are enlarged sectional views for
describing a step following the step of FIG. 33;
[0074] FIG. 35 is a sectional view for describing a step of the
method of manufacturing the thin film magnetic head according to
the third embodiment of the invention, showing an enlarged cross
section parallel to the medium facing surface;
[0075] FIG. 36 is an enlarged sectional view for describing a step
following the step of FIG. 35;
[0076] FIG. 37 is an enlarged sectional view for describing a step
following the step of FIG. 36;
[0077] FIG. 38 is an enlarged sectional view for describing a step
following the step of FIG. 37;
[0078] FIG. 39 is an enlarged sectional view for describing a step
following the step of FIG. 38;
[0079] FIG. 40 is an enlarged sectional view for describing a step
following the step of FIG. 39;
[0080] FIG. 41 is a plot of experimental results of a heat
dissipation effect of the third embodiment of the invention;
[0081] FIG. 42 is a plot of experimental results of the heat
dissipation effect and asymmetry of the third embodiment of the
invention;
[0082] FIG. 43 is a cross sectional view of an MR element according
to a fourth embodiment of the invention, showing a cross section
perpendicular to the medium facing surface;
[0083] FIG. 44 is an enlarged sectional view for describing a step
of a method of manufacturing the MR element shown in FIG. 43;
[0084] FIG. 45 is a cross sectional view of an MR element according
to a fifth embodiment of the invention, showing a cross section
perpendicular to the medium facing surface;
[0085] FIG. 46 is an enlarged sectional view for describing a step
of a method of manufacturing the MR element shown in FIG. 45;
[0086] FIG. 47 is a cross sectional view of an MR element according
to a sixth embodiment of the invention, showing a cross section
parallel to the medium facing surface;
[0087] FIG. 48 is an enlarged sectional view for describing a step
of a method of manufacturing the MR element shown in FIG. 47;
[0088] FIG. 49 is an enlarged sectional view for describing a step
following the step of FIG. 48;
[0089] FIG. 50 is an enlarged sectional view for describing a step
following the step of FIG. 49;
[0090] FIG. 51 is a cross sectional view of an MR element according
to a seventh embodiment of the invention, showing a cross section
perpendicular to the medium facing surface;
[0091] FIG. 52 is an enlarged sectional view for describing a step
of a method of manufacturing the MR element shown in FIG. 51;
[0092] FIG. 53 is an enlarged sectional view for describing a step
following the step of FIG. 52;
[0093] FIG. 54 is a cross sectional view of a sectional structure
of a conventional thin film magnetic head;
[0094] FIG. 55 is a cross sectional view of an MR element of the
thin film magnetic head shown in FIG. 54, showing a sectional
structure parallel to the medium facing surface; and
[0095] FIG. 56 is a cross sectional view of the MR element of the
thin film magnetic head shown in FIG. 54, showing a sectional
structure perpendicular to the medium facing surface.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0096] Embodiments of the invention will be described in detail
below with reference to the drawings.
[0097] [First Embodiment]
[0098] An MR element functioning as a magnetic transducer according
to a first embodiment of the invention and a thin film magnetic
head functioning as the thin film magnetic head using the MR
element will be described with reference to FIGS. 1 to 16.
[0099] <Structures of MR Element and Thin Film Magnetic
Head>
[0100] FIG. 1 is a cross sectional view of a basic structure of a
thin film magnetic head 100 of the first embodiment. The thin film
magnetic head 100 comprises an integration of a recording head 101
for recording information on a magnetic recording medium such as a
hard disk and a reproducing head 102 for reproducing information
from the magnetic recording medium. One end surface (the left end
surface in FIG. 1) of the thin film magnetic head 100 is a medium
facing surface S (or an air bearing surface: ABS) facing the
magnetic recording medium and corresponds to a specific example of
"a surface facing an external magnetic field" or "a surface facing
a recording medium" of the invention. In FIG. 1, the direction of
movement of the magnetic recording medium is indicated by arrow Z,
and the direction of a track width of the magnetic recording medium
(i.e., the direction of a reproducing track width of the thin film
magnetic head) is indicated by arrow X. The direction, in which the
magnetic recording medium faces the thin film magnetic head 100, is
indicated by arrow Y.
[0101] The thin film magnetic head 100 has a substrate 1 made of,
for example, Al.sub.2O.sub.3 and TiC (altic). An insulating layer 2
of 2 .mu.m to 10 .mu.m thick made of, for example, Al.sub.2O.sub.3
(alumina) and a bottom shield layer 3 of 1 .mu.m to 3 .mu.m thick
made of a magnetic material such as NiFe (permalloy) are stacked on
the base 1. A bottom shield gap layer 4 and a top shield gap layer
6, each of which is made of Al.sub.2O.sub.3 or AlN (aluminum
nitride) and has a thickness of 10 nm to 100 nm, are formed on the
bottom shield layer 3.
[0102] An MR element 50 (see FIG. 2) including a stack 5 that is a
spin valve film is buried between the bottom shield gap layer 4 and
the top shield gap layer 6. A top shield layer-cum-bottom pole 9
(hereinafter referred to as a top shield layer) of 1 .mu.m to 4
.mu.m thick made of a magnetic material such as NiFe, for use in
both of the reproducing head 102 and the recording head 101 is
formed on the top shield gap layer 6.
[0103] A write gap layer 10 of 0.1 .mu.m to 0.5 .mu.m thick made of
an insulating film such as Al.sub.2O.sub.3 is formed on the top
shield layer 9. First-layer thin film coils 12 (each having a
thickness of 2 .mu.m to 3 .mu.m) for the recording head and a
photoresist layer 13 for coating the thin film coils 12 are formed
on the write gap layer 10 with a photoresist layer 11 of 1.0 .mu.m
to 5.0 .mu.m thick in between. Second-layer thin film coils 14
(each having a thickness of 2 .mu.m to 3 .mu.m) and a photoresist
layer 15 for coating the thin film coils 14 are formed on the
photoresist layer 13. In the embodiment, the description has been
given with regard to an example in which the thin film coils
comprise two layers. However, the total number of thin film coils
may be one, or three or more.
[0104] A top pole 16 of about 3 .mu.m thick made of a magnetic
material for the recording head, e.g., NiFe or FeN that is a
material having high saturation magnetic flux density is formed so
as to coat the photoresist layers 11, 13 and 15. The top pole 16 is
coated with an overcoat layer (an overcoat layer 17 shown in FIG.
9) of 20 .mu.m to 30 .mu.m thick made of, for example,
Al.sub.2O.sub.3, but the overcoat layer is not shown in FIG. 1.
[0105] The bottom shield layer 3, the bottom shield gap layer 4,
the MR element 50, the top shield gap layer 6 and the top shield
layer 9 compose the reproducing head 102 for detecting information
from the magnetic recording medium (i.e., a signal magnetic field
from the magnetic recording medium). The reproducing head 102 is
adapted to detect a change in electrical resistance occurring in
the MR element 50 by the signal magnetic field from the magnetic
recording medium. The top shield layer 9, the write gap layer 10,
the thin film coils 12 and 14 and the top pole 16 compose the
recording head 101 for writing information on the magnetic
recording medium. The recording head 101 is adapted to generate a
magnetic flux in the top and bottom poles 16 and 9 by a current
passing through the thin film coils 12 and 14 and thereby magnetize
a magnetic layer of the magnetic recording medium by the magnetic
flux generated near the write gap layer 10 between the poles 16 and
9.
[0106] The bottom shield layer 3 corresponds to a specific example
of "a first magnetic shield layer" of the invention. The top shield
layer 9 corresponds to a specific example of "a second magnetic
shield layer" of the invention. The bottom shield layer 3 and the
top shield layer 9 also correspond to a specific example of "two
magnetic shield layers" of the invention. The shield gap layers 4
and 8 correspond to a specific example of "a first shield gap
layer" and a specific example of "a second shield gap layer" of the
invention, respectively. The top shield layer 9 (the bottom pole)
and the top pole 16 correspond to a specific example of "two
magnetic layers" of the invention. A part including the bottom pole
9, the top pole 16, the thin film coils 12 and 14 and the write gap
layer 10 corresponds to a specific example of "an inductive
magnetic transducer" of the invention.
[0107] FIG. 2 is a cross sectional view of the MR element 50
including the stack 5. FIG. 2 shows a cross section parallel to the
medium facing surface S of the thin film magnetic head 100 (a cross
section taken along the line II-II of FIG. 1). The stack 5 of the
MR element 50 of the embodiment has a stacked structure on the
bottom shield gap layer 4: the stacked structure comprising an
antiferromagnetic layer 51 made of, for example, PtMn
(platinum-manganese); a pinned layer 52 which is a magnetic layer
made of, for example, Co (cobalt); a nonmagnetic metal layer 53
made of, for example, Cu (copper); and a free layer 54 made of, for
example, NiFe.
[0108] When heat treatment takes place at, for example, 250 degrees
centigrade in a state in which the pinned layer 52 and the
antiferromagnetic layer 51 are stacked, the orientation of
magnetization of the pinned layer 52 is fixed by exchange coupling
occurring on an interface between the pinned layer 52 and the
antiferromagnetic layer 51. In the embodiment, it is assumed that
the orientation of magnetization of the pinned layer 52 is fixed in
the Y direction in FIG. 2.
[0109] Biasing films for preventing a noise (the so-called
Barkhausen noise) by matching the orientation of magnetization of
the free layer 54 are provided on both sides of the stack 5 along
the X direction in FIG. 2. In the embodiment, each biasing film
comprises two layers: one biasing film comprises a biasing
ferromagnetic layer 55a and a biasing antiferromagnetic layer 56a
stacked on the biasing ferromagnetic layer 55a; and the other
biasing film comprises a biasing ferromagnetic layer 55b and a
biasing antiferromagnetic layer 56b stacked on the biasing
ferromagnetic layer 55b. A bias magnetic field to be applied to the
free layer 54 is generated by exchange coupling occurring on the
interface between the biasing ferromagnetic layer 55a and the
biasing antiferromagnetic layer 56a and the interface between the
biasing ferromagnetic layer 55b and the biasing antiferromagnetic
layer 56b. In the embodiment, it is assumed that the bias magnetic
field is applied to the free layer 54 in the X direction in FIG. 2.
The antiferromagnetic layer 51 corresponds to a specific example of
"an antiferromagnetic layer" of the invention. The pinned layer 52
corresponds to a specific example of "a ferromagnetic layer" of the
invention. The nonmagnetic metal layer 53 corresponds to a specific
example of "a nonmagnetic layer" of the invention. The free layer
54 corresponds to a specific example of "a soft magnetic layer" of
the invention.
[0110] FIG. 3 is a cross sectional view of the stack 5 taken along
the line III-III of FIG. 2. FIG. 3 shows a cross section
perpendicular to the medium facing surface S. On the medium facing
surface S of the stack 5, one end face (the left end in FIG. 3) of
the antiferromagnetic layer 51, the pinned layer 52, the
nonmagnetic metal layer 53 and the free layer 54 matches the medium
facing surface S. On the other hand, the end face (the right end
surface in FIG. 3) opposite to the medium facing surface S of the
stack 5 is a tapered surface 5T inclined to the medium facing
surface S. The free layer 54, the nonmagnetic metal layer 53, the
pinned layer 52 and the antiferromagnetic layer 51 have the
distance between the medium facing surface S and the opposite face,
which becomes longer in this order. Specifically, a difference
(D1-D2) between a distance D1 and a distance D2 is from 0.05 .mu.m
to 1 .mu.m. The distance D1 refers to the distance between the
medium facing surface S of the antiferromagnetic layer 51 and the
opposite face, on the side opposite to the free layer 54 (i.e., the
bottom surface of the antiferromagnetic layer 51 in FIG. 3). The
distance D2 refers to the distance between the medium facing
surface S of the free layer 54 and the opposite face, on the side
opposite to the antiferromagnetic layer 51 (i.e., the top surface
of the free layer 54 in FIG. 3). The distance D2 between the medium
facing surface S of the free layer 54 and the opposite face
corresponds to an MR height.
[0111] <Method of Manufacturing Thin Film Magnetic Head>
[0112] Next, a method of manufacturing the thin film magnetic head
100 will be described with reference to FIGS. 4 to 15. FIGS. 4 to 9
and FIG. 12B show a cross section perpendicular to the medium
facing surface S. FIGS. 10, 11, 12A, 13 and 14 show an enlarged
cross section of the thin film magnetic head parallel to the medium
facing surface. FIG. 15 shows a planar structure of the thin film
magnetic head 100.
[0113] In the manufacturing method according to the embodiment,
first, as shown in FIG. 4, the insulating layer 2 made of, for
example, Al.sub.2O.sub.3 is deposited with a thickness of about 2
.mu.m to 10 .mu.m on the base 1 made of, for example,
Al.sub.2O.sub.3 and TiC. Then, the bottom shield layer 3 made of a
magnetic material, for use in the reproducing head is formed with a
thickness of 1 .mu.m to 3 .mu.m on the insulating layer 2 by
plating, for example. Then, for example, Al.sub.2O.sub.3 or AlN is
deposited with a thickness of 10 nm to 100 nm on the bottom shield
layer 3 by sputtering, whereby the bottom shield gap layer 4 is
formed as the insulating layer. Then, a stacked film 5A for forming
the stack 5 is formed with a thickness of a few tens of nanometers
on the bottom shield gap layer 4. Specifically, as shown in FIG. 10
in enlarged view, the antiferromagnetic layer 51, the pinned layer
52, the nonmagnetic metal layer 53, the free layer 54 and a
protective layer 58 are stacked in this order on the bottom shield
gap layer 4 by sputtering, whereby the stacked film 5A is
formed.
[0114] The antiferromagnetic layer 51 is formed of a material such
as PtMn or NiMn (nickel-manganese) with a thickness of about 20 nm.
The pinned layer 52 is formed of a material such as Co with a
thickness of about 2 nm. The nonmagnetic metal layer 53 is formed
of a material such as Cu with a thickness of 2.5 nm. The free layer
54 is formed of a material such as NiFe with a thickness of 8 nm.
In FIG. 10, the respective thicknesses of the antiferromagnetic
layer 51, the pinned layer 52, the nonmagnetic metal layer 53, the
free layer 54 and the protective layer 58 are exaggerated compared
to the thicknesses of the other layers.
[0115] The protective layer 58 is made of a single-layer film made
of one material selected from among Ta, Nb, Mo, Zr, Hf, Cu, Al, Rh,
Ru, Pt, RuRhMn, PtMn, PtMnRh and TiW or one two-layer film selected
from among Ta/PtMn, Ta/Cu, Ta/Al, Ta/Ru, TiW/Cu, TiW/Rh and TiW/Ru
(incidentally, a mark "/" between elements represents that both the
elements are stacked).
[0116] Then, as shown in FIGS. 5 and 11, a photoresist pattern 6a
is selectively formed on the stacked film 5A at a position where
the stack 5 is to be formed. The photoresist pattern 6a is, for
example, T-shaped in cross section so that lift-off to be described
later can be facilitated. Then, the stacked film 5A is etched by
using the photoresist pattern 6a as a mask, whereby a pattern of
the stack 5 comprising the antiferromagnetic layer 51, the pinned
layer 52, the nonmagnetic metal layer 53 and the free layer 54 is
formed.
[0117] In more detail, as shown in FIGS. 12A and 12B, the stacked
film 5A is obliquely etched by means of ion milling using, for
example, Ar (argon) or the like by using the photoresist pattern 6a
as the mask, whereby the tapered surface 5A is formed on the end
face opposite to the medium facing surface S. A taper angle .theta.
is controlled by adjusting at least either an angle .alpha. of
incidence of ions or a thickness t of the photoresist pattern 6a.
Desirably, the angle .alpha. of incidence of ions is adjusted
within a range of from 10 degrees to 60 degrees, and the thickness
t of the photoresist pattern 6a is adjusted within a range of from
0.5 .mu.m to 5.0 .mu.m. For example, when the angle .alpha. of
incidence of ions is 10 degrees and the thickness t of the
photoresist pattern 6a is 3 .mu.m, the taper angle .theta. of the
tapered surface 5A can be 15 degrees. The thicker the thickness t
of the photoresist pattern 6a is or the larger the angle .alpha. of
incidence of ions is, the smaller the taper angle .theta. is.
[0118] Then, as shown in FIG. 13, the biasing ferromagnetic layers
55a and 55b and the biasing antiferromagnetic layers 56a and 56b
for applying the bias magnetic field to the free layer 54 are
stacked on both sides of the stack 5. Furthermore, lead layers 7a
and 7b are formed with a thickness of about 100 nm to 200 nm on the
biasing antiferromagnetic layers 56a and 56b, respectively. The
lead layer 7 is formed as, for example, a stacked film of Ta
(tantalum) and Au (gold) or a stacked film of Ti--W
(titanium-tungsten alloy) and Ta.
[0119] As a material of the biasing antiferromagnetic layer 56a and
56b and the antiferromagnetic layer 51 of the stack 5, any material
can be selected from among PtMn whose composition consists of 47
atom % to 52 atom % Pt and 48 atom % to 53 atom % Mn (most
preferably, 48 atom % Pt and 52 atom % Mn); PtMnRh whose
composition consists of 33 atom % to 52 atom % Pt, 45 atom % to 57
atom % Mn and 0 atom % to 17 atom % Rh (most preferably, 40 atom %
Pt, 51 atom % Mn and 9 atom % Rh); and RuRhMn whose composition
consists of 0 atom % to 20 atom % Ru, 0 atom % to 20 atom % Rh and
75 atom % to 85 atom % Mn (most preferably, 3 atom % Ru, 15 atom %
Rh and 82 atom % Mn).
[0120] Then, the photoresist pattern 6a and a deposit D (the
respective materials of the biasing ferromagnetic layer, the
biasing antiferromagnetic layer and the lead layer) stacked on the
photoresist pattern 6a are removed by lift-off. Then, as shown in
FIGS. 6 and 14, a top shield gap layer 8 made of an insulating film
such as AlN is formed with a thickness of about 10 nm to 100 nm so
as to coat the bottom shield gap layer 4 and the stack 5, whereby
the stack 5 is buried in the shield gap layers 4 and 8. Then, the
top shield layer-cum-bottom pole 9 (hereinafter referred to as the
top shield layer) made of a magnetic material, for use in both of
the reproducing head and the recording head is formed with a
thickness of about 1 .mu.m to 4 .mu.m on the top shield gap layer
8.
[0121] Then, as shown in FIG. 7, the write gap layer 10 made of an
insulating film, e.g., an Al.sub.2O.sub.3 film is formed with a
thickness of 0.1 .mu.m to 0.5 .mu.m on the top shield layer 9. The
photoresist layer 11 for determining a throat height is formed into
a predetermined pattern with a thickness of about 1.0 .mu.m to 2.0
.mu.m on the write gap layer 10. Then, the first-layer thin film
coils 12 for an inductive recording head are formed with a
thickness of 2 .mu.m to 3 .mu.m on the photoresist layer 11. Then,
the photoresist layer 13 is formed into a predetermined pattern so
as to coat the photoresist layer 11 and the thin film coils 12.
Then, the second-layer thin film coils 14 are formed with a
thickness of 2 .mu.m to 3 .mu.m on the photoresist layer 13. Then,
the photoresist layer 15 is formed into a predetermined pattern so
as to coat the photoresist layer 13 and the thin film coils 14. The
thin film coils 12 and 14 correspond to "thin film coils" of the
invention.
[0122] Then, as shown in FIG. 8, the write gap layer 10 is
partially etched at the rear of the thin film coils 12 and 14 (on
the right side in FIG. 8) in order to form a magnetic path, whereby
an opening 10a is formed. Then, the top pole 16 made of a magnetic
material for the recording head, e.g., NiFe or FeN that is a
material having high saturation magnetic flux density is formed
into a pattern with a thickness of about 3 .mu.m so as to coat the
write gap layer 10, the opening 10a and the photoresist layers 11,
13 and 15. The top pole 16 is in contact with and magnetically
coupled to the top shield layer 9 (the bottom pole) in the opening
10a at the rear of the thin film coils 12 and 14.
[0123] Then, as shown in FIG. 9, the write gap layer 10 and the top
shield layer 9 (the bottom pole) are etched by ion milling using
the top pole 16 as a mask. Then, the overcoat layer 17 made of, for
example, Al.sub.2O.sub.3 is formed with a thickness of 20 .mu.m to
30 .mu.m on the top pole 16. Then, performed are the processing for
causing exchange coupling on the interface between the
antiferromagnetic layer 51 and the pinned layer 52 in order to fix
(pin) the orientation of magnetic field of the pinned layer 52 and
the processing for causing exchange coupling on the interface
between the biasing antiferromagnetic layer 56a and the biasing
ferromagnetic layer 55a and the interface between the biasing
antiferromagnetic layer 56b and the biasing ferromagnetic layer 55b
in order to generate the bias magnetic field.
[0124] Desirably, a temperature (a blocking temperature) at which
exchange coupling can occur on the interface between the
antiferromagnetic layer 51 and the pinned layer 52 differs from a
temperature at which exchange coupling can occur on the interface
between the biasing antiferromagnetic layer 56a and the biasing
ferromagnetic layer 55a and the interface between the biasing
antiferromagnetic layer 56b and the biasing ferromagnetic layer
55b. When the former is higher than the latter, the thin film
magnetic head 100 is heated at a higher temperature than the former
(the blocking temperature of the antiferromagnetic layer 51 and the
pinned layer 52) by using a chamber with a magnetic field
generating apparatus, or the like. Then, the thin film magnetic
head 100 is gradually cooled. When the temperature of the thin film
magnetic head 100 reaches the blocking temperature of the
antiferromagnetic layer 51 and the pinned layer 52, the magnetic
field is applied to the pinned layer 52 along a predetermined
orientation of magnetization (in the Y direction in FIG. 2 or 3).
Thus, the orientation of magnetization of the pinned layer 52 is
fixed. When the temperature of the thin film magnetic head 100
drops to the blocking temperature of the biasing antiferromagnetic
layers 56a and 56b and the biasing ferromagnetic layers 55a and
55b, the magnetic field is applied to the biasing ferromagnetic
layers 55a and 55b along a predetermined orientation of
magnetization (in the X direction in FIG. 2 or 3). Thus, the
orientation of magnetization of the biasing ferromagnetic layers
55a and 55b is fixed. The bias magnetic field is applied to the
stack 5 sandwiched between both the biasing ferromagnetic layers
55a and 55b by the biasing ferromagnetic layers 55a and 55b having
the fixed orientation of magnetization. When the blocking
temperature of the antiferromagnetic layer 51 and the pinned layer
52 is lower than the blocking temperature of the biasing
antiferromagnetic layers 56a and 56b and the biasing ferromagnetic
layers 55a and 55b, a procedure of the processing is the reverse of
the above-mentioned procedure.
[0125] Finally, the medium facing surface S of the recording head
and the reproducing head is formed by machining a slider, whereby
the thin film magnetic head 100 is completed. Although not shown in
the drawings, the thin film magnetic head 100 has a so-called trim
structure in which the respective side walls of parts of the top
pole 16, the write gap layer 10 and the top shield layer 9 (the
bottom pole) are vertically formed in self-alignment. The trim
structure can prevent an increase in an effective track width
resulting from a spread of the magnetic flux generated during
writing data on a narrow track.
[0126] FIG. 15 is a plan view of the thin film magnetic head 100
manufactured as described above. In FIG. 15, the overcoat layer 17
is not shown. FIGS. 4 to 9 and FIG. 12B correspond to a cross
section taken along the line A-AA of FIG. 15. FIGS. 10, 11, 12A, 13
and 14 correspond to a cross section taken along the line B-BB of
FIG. 15.
[0127] PtMn or NiMn used as the material of the antiferromagnetic
layer 51 in the embodiment has a CuAu--I type regular crystal
structure and requires heating in order to cause exchange coupling.
When a compound having an irregular crystal structure, such as FeMn
(iron-manganese) is used as the antiferromagnetic layer 51, the
orientation of magnetization of the pinned layer 52 is fixed only
by bringing the pinned layer 52 into contact with the
antiferromagnetic layer 51. Therefore, the compound does not
require heating. Similarly, the compound having the irregular
crystal structure, such as FeMn can be used as the biasing
antiferromagnetic layers 56a and 56b.
[0128] <Operation of Thin Film Magnetic Head>
[0129] Next, an operation (a reproducing operation) of the thin
film magnetic head 100 configured as described above will be
described.
[0130] In FIGS. 2 and 3, the orientation of magnetization of the
pinned layer 52 is fixed in the Y direction in FIG. 3 by an
exchange anisotropic magnetic field generated by exchange coupling
occurring on the interface between the pinned layer 52 and the
antiferromagnetic layer 51 of the stack 5. The orientation of
magnetization of the free layer 54 is matched to the direction of
the track width (the X direction in FIG. 2) by the bias magnetic
field generated by the biasing ferromagnetic layers 55a and 55b
located on both sides of the stack 5.
[0131] A sense current, which is a direct-current constant current,
is passed through the pinned layer 52, the nonmagnetic metal layer
53 and the free layer 54 through the lead layers 7a and 7b in the X
direction in FIG. 2. On receiving the signal magnetic field from
the magnetic recording medium, the orientation of magnetization of
the free layer 54 changes. Electrical resistance changes in
accordance with a relative angle between the orientation of
magnetization of the free layer 54 and the (fixed) orientation of
magnetization of the pinned layer 52, and thus a change in
electrical resistance is detected as a voltage change.
[0132] At this time, the sense current passes through the stack 5,
whereby Joule's heat is generated. Joule's heat is mainly generated
by the current passing through the pinned layer 52, the nonmagnetic
metal layer 53 and the free layer 54. Joule's heat is dissipated
from the antiferromagnetic layer 51 through the bottom shield gap
layer 4 and the bottom shield layer 3.
[0133] In the embodiment, as described above, the free layer 54,
the nonmagnetic metal layer 53, the pinned layer 52 and the
antiferromagnetic layer 51 have the distance between the medium
facing surface S and the opposite face, which becomes longer in
this order. In other words, an area of the antiferromagnetic layer
51 is larger than that of the free layer 54, and therefore
efficiency of heat dissipation improves compared to the case where
the area of the antiferromagnetic layer 51 is the same as that of
the free layer 54.
[0134] Detection of the signal magnetic field is performed in
accordance with a variation in the orientation of magnetization of
the free layer 54. Therefore, the reproducing track width and the
MR height of the MR element 50 can be reduced in accordance with
the track width of the magnetic recording medium in order to adapt
to the increase in a density of the magnetic recording medium. In
the embodiment, the area of the antiferromagnetic layer 51 is
larger than that of the free layer 54, and therefore a heat
dissipation area can be ensured by the antiferromagnetic layer 51
even if the free layer 54 is reduced in size. In other words, the
efficiency of heat dissipation of the MR element can be improved
while adapting to high-density recording.
[0135] FIG. 16 shows the result of measurement of a rise in the
temperature of the MR element 50 of the embodiment through which a
current of 4 mA to 8 mA is passed. The distance D1 between the
medium facing surface S of the antiferromagnetic layer 51 shown in
FIG. 3 and the opposite face on the edge opposite to the free layer
54 (i.e., the bottom surface of the antiferromagnetic layer 51 in
FIG. 3) is set to 1 .mu.m. The distance D2 between the medium
facing surface S of the free layer 54 and the opposite face on the
edge opposite to the antiferromagnetic layer 51 (i.e., the top
surface of the free layer 54 in FIG. 3) is set to 0.5 .mu.m. That
is, the difference (D1-D2) between the distance D1 between the
medium facing surface S of the antiferromagnetic layer 51 and the
opposite face on the edge opposite to the free layer 54 and the
distance D2 between the medium facing surface S of the free layer
54 and the opposite face on the edge opposite to the
antiferromagnetic layer 51 is equal to 0.5 .mu.m. For comparison,
FIG. 16 also shows experimental data on the MR element in which the
distance between the medium facing surface S of the
antiferromagnetic layer and the opposite face is the same as the
distance between the medium facing surface S of the free layer and
the opposite face (both of the distances are equal to 0.5
.mu.m).
[0136] The tapered surface 5A is provided on the end face of the
stack 5 and the distance between the medium facing surface S of the
antiferromagnetic layer 51 and the opposite face is longer than the
distance between the medium facing surface S of the free layer 54
and the opposite face, whereby the temperature rise can be reduced
by 25% to 30% as shown in FIG. 16.
[0137] FIG. 17 is a plot of a correlation between the difference
(D1-D2) and the rise in the temperature of the MR element, where
the difference (D1-D2) refers to the difference between the
distance D1 between the medium facing surface S of the
antiferromagnetic layer 51 and the opposite face on the edge
opposite to the free layer 54 and the distance D2 between the
medium facing surface S of the free layer 54 and the opposite face
on the edge opposite to the antiferromagnetic layer 51. In FIG. 17,
the temperature rise is expressed as a relative value to the
temperature rise (.degree. C.) which occurs when the stack 5 is not
tapered, i.e., when (D1-D2) is equal to 0. In FIG. 17, a
direct-current constant current of 6 mA is passed through the stack
5.
[0138] FIG. 17 also shows asymmetry of a plus output and a minus
output of a read output (a voltage output) of the MR element 50
when the magnetic fields (S and N) of the magnetic recording medium
are switched in a state in which the thin film magnetic head 100 is
caused to face the magnetic recording medium. As shown in FIG. 18,
asymmetry Asym is defined as expressed by the following equation
(1) in accordance with a plus peak value V1 and a minus peak value
V2 (both of V1 and V2 are absolute values) of an output waveform of
the MR element 50.
Asym=(V1-V2)/V1.times.100 (1)
[0139] In general, the MR element requires the asymmetry which is
limited so as to fall within a range of .+-.10%.
[0140] As shown in FIG. 17, when the above-mentioned difference
(D1-D2) between the distances is less than 0.05 .mu.m, little heat
dissipation effect of the MR element 50 is achieved. On the other
hand, when the above-mentioned difference (D1-D2) between the
distances is more than 1.0 .mu.m, the asymmetry exceeds 10%
(because of an influence of the magnetic field generated by the
sense current diverted to a tapered portion of the
antiferromagnetic layer 51). It is therefore desirable that the
difference (D1-D2) between the distance D1 between the medium
facing surface S of the antiferromagnetic layer 51 and the opposite
face on the edge opposite to the free layer 54 and the distance D2
between the medium facing surface S of the free layer 54 and the
opposite face on the edge opposite to the antiferromagnetic layer
51 is from 0.05 .mu.m to 1.0 .mu.m.
[0141] <Effect of First Embodiment>
[0142] As described above, according to the embodiment, in the
stack 5 of the MR element 50, the distance between the medium
facing surface S of the antiferromagnetic layer 51 and the opposite
face is longer than the distance between the medium facing surface
S of the free layer 54 and the opposite face. Therefore, the area
of the antiferromagnetic layer 51 required for heat dissipation can
be ensured while reducing the MR height and the like of the MR
element 50 in accordance with the track width of the magnetic
recording medium. In other words, the efficiency of heat
dissipation can be improved while adapting to the increase in the
density of the magnetic recording medium.
[0143] Joule's heat of the MR element 50 is generated,
particularly, at the center of the stack 5 in the direction of the
reproducing track width. In the embodiment, the distance between
the medium facing surface S of the antiferromagnetic layer 51 and
the opposite face is longer. Therefore, heat generated at the
center of the stack 5 can be efficiently dissipated, compared to
the case where a length of the antiferromagnetic layer 51 is longer
in the direction of the reproducing track width.
[0144] Moreover, in the embodiment, the tapered surface 5A is
formed on the end face opposite to the medium facing surface S of
the stack comprising the free layer 54, the nonmagnetic metal layer
53, the pinned layer 52 and the antiferromagnetic layer 51.
Therefore, the distance between the medium facing surface S of the
antiferromagnetic layer 51 and the opposite face can be longer than
the distance between the medium facing surface S of the free layer
54 and the opposite face by a relatively simple method (a method in
which the angle of incidence of ions for ion milling is inclined,
or the like).
[0145] [Second Embodiment]
[0146] Next, a second embodiment of the invention will be
described.
[0147] FIG. 19 is a cross sectional view of a structure of a stack
of an MR element of the second embodiment. Similarly to the first
embodiment, a stack 150 of the MR element of the second embodiment
has a stacked structure comprising an antiferromagnetic layer 151
of 20 nm thick made of, for example, PtMn; a pinned layer 152 of 2
nm thick made of, for example, Co; a nonmagnetic metal layer 153 of
2.5 nm thick made of, for example, Cu; a free layer 154 of 8 nm
thick made of, for example, NiFe; and a protective layer 158 made
of, for example, Cu.
[0148] In the embodiment, an end face 154A of the free layer 154
opposite to the medium facing surface S is substantially parallel
to the medium facing surface S. The respective end faces of three
layers: the antiferromagnetic layer 151, the pinned layer 152 and
the nonmagnetic metal layer 153, opposite to the medium facing
surface S are formed as a tapered surface 150A inclined to the
medium facing surface S. The difference (D1-D2) between the
distance D1 between the medium facing surface S of the
antiferromagnetic layer 151 and the opposite face on the edge
opposite to the free layer 154 and the distance D2 between the
medium facing surface S of the free layer 154 and the opposite face
is, for example, from 0.05 .mu.m to 1 .mu.m. Except the stack 150,
the structure of the MR element of the second embodiment is the
same as the structure (see FIG. 2) of the MR element 50 of the
first embodiment.
[0149] Next, a method of manufacturing the MR element according to
the second embodiment will be described. Similarly to the first
embodiment, the insulating layer 2 made of, for example,
Al.sub.2O.sub.3, the bottom shield layer 3 made of NiFe and the
bottom shield gap layer 4 made of, for example, Al.sub.2O.sub.3 or
AlN are stacked in sequence on the substrate 1 made of, for
example, Al.sub.2O.sub.3 and TiC. Then, a stacked film 105 for
forming the stack 150 is formed with a thickness of a few tens of
nanometers on the bottom shield gap layer 4. Specifically, the
antiferromagnetic layer 151, the pinned layer 152, the nonmagnetic
metal layer 153, the free layer 154 and the protective layer 158
are stacked in this order on the bottom shield gap layer 4 by
sputtering, whereby the stacked film 105 is formed.
[0150] Then, as shown in FIG. 20, a photoresist pattern 6b is
selectively formed on the stacked film 105 at a position where the
stack 150 is to be formed. Specifically, the stacked film 105 is
etched by means of ion milling using, for example, Ar (argon) or
the like by using the photoresist pattern 6b as a mask.
[0151] An etching process of the stacked film 105 includes the
following two steps. In etching the free layer 154 and the
protective layer 158, the direction of incidence of ions for ion
milling is perpendicular to a film surface (i.e., parallel to the
medium facing surface S) as shown in FIG. 20. Thus, the end face
154A of the free layer 154 opposite to the medium facing surface S
is formed into a vertical surface. After the end of etching of the
free layer 154 and the protective layer 158, the direction of
incidence of ions is inclined as shown in FIG. 21 so that the
tapered surface 150A is formed on the remaining three layers (the
nonmagnetic metal layer 153, the pinned layer 152 and the
antiferromagnetic layer 151). Similarly to the first embodiment, it
is desirable that the angle .alpha. of incidence of ions is
adjusted within a range of from 10 degrees to 60 degrees and the
thickness t of the photoresist pattern 6b is adjusted within a
range of from 0.5 .mu.m to 5.0 .mu.m. For example, when the angle
.alpha. of incidence of ions is 10 degrees and the thickness t of
the photoresist pattern 6b is 3 .mu.m, the taper angle .theta. of
the tapered surface 150A can be 15 degrees.
[0152] Thus, as shown in FIG. 21, the tapered surface 150A can be
formed on the remaining three layers (the nonmagnetic metal layer
153, the pinned layer 152 and the antiferromagnetic layer 151)
without tapering the end faces of the free layer 154 and the
protective layer 158. The subsequent steps are the same as the
steps of the above-mentioned first embodiment. That is, the thin
film magnetic head is completed through the same steps as the steps
of the above-mentioned first embodiment shown in FIGS. 4 to 9.
[0153] In the thin film magnetic head of the embodiment, the area
(the heat dissipation area) of the antiferromagnetic layer 151 is
larger than the area of the free layer 154. Therefore, the same
effect as the effect of the first embodiment is obtained: the
effect of being able to improve the efficiency of heat dissipation
while adapting to the increase in the density of the magnetic
recording medium is obtained. Furthermore, in the embodiment, one
end face of the free layer 154 is parallel to the opposite face,
and therefore the MR height can be more precisely determined.
[0154] Moreover, in the step of etching the stack by ion milling,
the direction of incidence of ions in etching the free layer 154
differs from the direction of incidence of ions in etching the
remaining three layers. Therefore, only the end face of the free
layer 154 can be formed into the vertical surface, and the tapered
surface 150A can be formed on the end faces of the remaining three
layers.
[0155] In the first and second embodiments, the surface of the
stack of MR element opposite to the medium facing surface is formed
as the tapered surface. However, as shown in FIG. 22, a stepped
surface may be formed by changing the distance between the medium
facing surface S of each of an antiferromagnetic layer 251, a
pinned layer 252, a nonmagnetic metal layer 253 and a free layer
254 of a stack 250 and the opposite surface. For example, each
layer is etched so that the end face thereof may be perpendicular
to the substrate, whereby the stack having the stepped surface can
be formed.
[0156] [Third Embodiment]
[0157] An MR element functioning as a magnetic transducer according
to a third embodiment of the invention and a thin film magnetic
head functioning as the thin film magnetic head using the MR
element will be described with reference to FIGS. 23 to 40.
[0158] <Structures of MR Element and Thin Film Magnetic
Head>
[0159] FIG. 23 is a cross sectional view of a basic structure of a
thin film magnetic head of the third embodiment. The third
embodiment is the same as the first embodiment, except the
structure of a stack 350 of an MR element 300. Accordingly,
structural components in common with the first embodiment are
indicated by the same reference numerals and symbols, and the
description thereof is omitted.
[0160] The thin film magnetic head comprises the substrate 1, the
insulating layer 2, the bottom shield layer 3, the bottom shield
gap layer 4, the top shield gap layer 8, the top shield layer 9,
the write gap layer 10, the photoresist layer 11, the thin film
coils 12 and 14, the photoresist layers 13 and 15, the top pole 16
and the overcoat layer 17 (see FIGS. 34A and 34B), which are
configured in the same manner as the first embodiment. The MR
element 300 is buried between the bottom shield gap layer 4 and the
top shield gap layer 8.
[0161] FIG. 24 is a cross sectional view of the MR element 300.
FIG. 24 shows a cross section parallel to the medium facing surface
S of the thin film magnetic head (a cross section taken along the
line XXIV-XXIV of FIG. 23). The MR element 300 of the embodiment
includes a heat dissipation layer 360 made of nonmagnetic metal of
high resistance (Zn, Bi, Ta, Pt, Pd or the like) formed on the
bottom shield gap layer 4, and the stack 350 formed on the heat
dissipation layer 360. The stack 350 has a stacked structure on the
heat dissipation layer 360: the stacked structure comprising an
antiferromagnetic layer 351 made of, for example, PtMn; a pinned
layer 352 made of, for example, Co; a nonmagnetic metal layer 353
made of, for example, Cu; a free layer 354 made of, for example,
NiFe; and a protective layer 358 made of, for example, Ta. When
heat treatment takes place at, for example, 250 degrees centigrade
in a state in which the pinned layer 352 and the antiferromagnetic
layer 351 are stacked, the orientation of magnetization of the
pinned layer 352 is fixed by exchange coupling occurring on the
interface between the pinned layer 352 and the antiferromagnetic
layer 35i. In FIG. 24, the width of the stack 350 (a read width of
the MR element 300) corresponding to the track width of the
magnetic recording medium (not shown) corresponds to a reproducing
track width Tw.
[0162] Biasing films for preventing a noise (the so-called
Barkhausen noise) by matching the orientation of magnetization of
the free layer 354 are provided on both sides of the stack 350 in
the direction of the reproducing track width Tw shown in FIG. 24.
In the embodiment, each biasing film comprises two layers: one
biasing film comprises the biasing ferromagnetic layer 55a and the
biasing antiferromagnetic layer 56a stacked on the biasing
ferromagnetic layer 55a; and the other biasing film comprises the
biasing ferromagnetic layer 55b and the biasing antiferromagnetic
layer 56b stacked on the biasing ferromagnetic layer 55b. The MR
element 300 corresponds to a specific example of "a magnetic
transducer" of the invention. The stack 350 corresponds to a
specific example of "a magneto-sensitive layer" of the invention.
The heat dissipation layer 360 corresponds to a specific example of
"a heat dissipation layer" of the invention. The antiferromagnetic
layer 351 corresponds to a specific example of "an
antiferromagnetic layer" of the invention. The pinned layer 352
corresponds to a specific example of "a ferromagnetic layer" of the
invention. The nonmagnetic metal layer 353 corresponds to a
specific example of "a nonmagnetic layer" of the invention. The
free layer 354 corresponds to a specific example of "a soft
magnetic layer" of the invention.
[0163] FIG. 25 is a cross sectional view of the MR element 300
taken along the line XXV-XXV of FIG. 24. FIG. 25 shows a cross
section perpendicular to the medium facing surface S. On the medium
facing surface S of the stack 350, one end (the left end in FIG.
25) of the antiferromagnetic layer 351, the pinned layer 352, the
nonmagnetic metal layer 353 and the free layer 354 matches the
medium facing surface S. The end face (the right end surface in
FIG. 25) opposite to the medium facing surface S of the stack 350
is an end face parallel to the medium facing surface S. The
distance from the medium facing surface S of the free layer 354 to
the opposite face corresponds to the MR height (indicated by
reference symbol MR-H in FIG. 25).
[0164] FIG. 26 is a plan view of the MR element 300 viewed from the
direction of arrow XXVI of FIG. 24. As shown in FIG. 26, a surface
area of the heat dissipation layer 360 is larger than that of the
stack 350. Specifically, a distance L1 between the medium facing
surface S of the heat dissipation layer 360 and the opposite face
is longer than a distance L2 between the medium facing surface S of
the stack 350 and the opposite face. Also, a length W of the heat
dissipation layer 360 in the direction of the reproducing track
width Tw is longer than the reproducing track width Tw. The
thickness of the heat dissipation layer 360 is, for example, from 1
nm to 100 nm inclusive. The distance L1 between the medium facing
surface S of the heat dissipation layer 360 and the opposite face
is equal to 0.8 .mu.m. The distance L2 between the medium facing
surface S of the stack 350 and the opposite face is equal to 0.3
.mu.m. The length W of the heat dissipation layer 360 in the
direction of the reproducing track width Tw is equal to 1.0 .mu.m.
The reproducing track width Tw is equal to 0.5 .mu.m.
[0165] <Method of Manufacturing Thin Film Magnetic Head>
[0166] Next, a method of manufacturing the thin film magnetic head
will be described with reference to FIGS. 27 to 40. FIGS. 27 to 33
and FIG. 34A show a cross section perpendicular to the medium
facing surface. FIG. 34B and FIGS. 35 to 40 show an enlarged cross
section of a part of the thin film magnetic head, i.e., a part
including the MR element 300, parallel to the medium facing
surface.
[0167] In the manufacturing method according to the embodiment,
first, as shown in FIG. 27, the insulating layer 2, the bottom
shield layer 3 and the bottom shield gap layer 4 are sequentially
formed on the substrate 1 in the same manner as the first
embodiment. Then, as shown in FIG. 35 in enlarged view, nonmagnetic
metal of high resistance containing Zr, Bi, Ta, Pt or Pd is
deposited with a thickness of 1 nm to 100 nm on the bottom shield
gap layer 4 by sputtering, whereby a heat dissipation layer forming
film 306 for forming the heat dissipation layer 360 is formed.
Then, as shown in FIGS. 28 and 36, a photoresist pattern 306b is
formed at a predetermined position on the heat dissipation layer
forming film 306. The heat dissipation layer forming film 306 is
etched by using the photoresist pattern 306b as a mask, whereby a
pattern of the heat dissipation layer 360 is formed.
[0168] Then, as shown in FIGS. 29 and 37, a stacked film 305 for
forming the stack 350 is formed with a thickness of a few tens of
nanometers on the heat dissipation layer 360. Specifically, as
shown in FIG. 37 in enlarged view, the antiferromagnetic layer 351,
the pinned layer 352, the nonmagnetic metal layer 353, the free
layer 354 and the protective layer 358 are stacked in this order on
the heat dissipation layer 360 by sputtering, whereby the stacked
film 305 is formed. The respective materials and thicknesses of the
antiferromagnetic layer 351, the pinned layer 352, the nonmagnetic
metal layer 353, the free layer 354 and the protective layer 358
are the same as those of the first embodiment.
[0169] Then, as shown in FIGS. 30 and 38, a photoresist pattern
306b is selectively formed on the stacked film 305 at a position
where the stack 350 is to be formed. The photoresist pattern 306b
is, for example, T-shaped in cross section so that lift-off to be
described later can be facilitated. The stacked film 305 is
vertically etched by means of ion milling using, for example, Ar or
the like by using the photoresist pattern 306b as a mask, whereby a
pattern of the stack 350 comprising the antiferromagnetic layer
351, the pinned layer 352, the nonmagnetic metal layer 353 and the
free layer 354 is formed. Then, as shown in FIG. 39, the biasing
ferromagnetic layers 55a and 55b, the biasing antiferromagnetic
layers 56a and 56b and the lead layers 7a and 7b, all of which are
the same as the first embodiment, are formed on both sides of the
stack 350. Then, the photoresist pattern 306b and the deposit D
(the respective materials of the biasing ferromagnetic layer, the
biasing antiferromagnetic layer and the lead layer) stacked on the
photoresist pattern 306b are removed by lift-off.
[0170] Then, as shown in FIGS. 31 and 40, the top shield gap layer
8 made of an insulating film such as AlN is formed with a thickness
of about 10 nm to 100 nm so as to coat the bottom shield gap layer
4 and the stack 350, whereby the stack 350 and the heat dissipation
layer 360 are buried in the shield gap layers 4 and 8. Then,
similarly to the first embodiment, the top shield layer 9, the
write gap layer 10, the photoresist layer 11, the thin film coils
12, the photoresist layer 13, the thin film coils 14, the
photoresist layer 15, the top pole 16 and the overcoat layer 17 are
formed on the top shield gap layer 8. Furthermore, similarly to the
first embodiment, performed are the processing for causing exchange
coupling on the interface between the antiferromagnetic layer 351
and the pinned layer 352 and the processing for causing exchange
coupling on the interface between the biasing antiferromagnetic
layer 56a and the biasing ferromagnetic layer 55a and the interface
between the biasing antiferromagnetic layer 56b and the biasing
ferromagnetic layer 55b.
[0171] Finally, the medium facing surface S of the recording head
and the reproducing head is formed by machining a slider, whereby
the thin film magnetic head is completed. A plan view of the thin
film magnetic head manufactured as described above is the same as a
plan view shown in FIG. 15. As shown in FIG. 34B, the structure, in
which the respective side walls of parts of the top pole 16, the
write gap layer 10 and the top shield layer 9 (the bottom pole) are
vertically formed in self-alignment, is called the trim structure.
The trim structure can prevent the increase in the effective track
width resulting from the spread of the magnetic flux generated
during writing data on the narrow track.
[0172] <Operation of Thin Film Magnetic Head>
[0173] Next, the operation (the reproducing operation) of the thin
film magnetic head configured as described above will be
described.
[0174] In FIGS. 24 and 25, the orientation of magnetization of the
pinned layer 352 is fixed in the Y direction in FIG. 25 by the
exchange anisotropic magnetic field generated by exchange coupling
occurring on the interface between the pinned layer 352 and the
antiferromagnetic layer 351 of the stack 350. The orientation of
magnetization of the free layer 354 is matched to the direction of
the track width (the X direction in FIG. 24) by the bias magnetic
field generated by the biasing ferromagnetic layers 55a and 55b
located on both sides of the stack 350. The sense current, which is
the direct-current constant current, is passed through the pinned
layer 352, the nonmagnetic metal layer 353 and the free layer 354
through the lead layers 7a and 7b in the X direction in FIG. 24. On
receiving the signal magnetic field from the magnetic recording
medium, the orientation of magnetization of the free layer 354
changes. Electrical resistance changes in accordance with the
relative angle between the orientation of magnetization of the free
layer 354 and the (fixed) orientation of magnetization of the
pinned layer 352, and thus the change in electrical resistance is
detected as the voltage change.
[0175] At this time, the sense current passes through the stack
350, whereby Joule's heat is generated. Joule's heat is mainly
generated by the current passing through the pinned layer 352, the
nonmagnetic metal layer 353 and the free layer 354. Because of heat
transfer, Joule's heat is transferred to the heat dissipation layer
360 through a boundary surface between the stack 350 and the heat
dissipation layer 360, and Joule's heat is further transferred to
the bottom shield gap layer 4 (and the bottom shield layer 3 under
the bottom shield gap layer 4) through a boundary surface between
the heat dissipation layer 360 and the bottom shield gap layer
4.
[0176] In the embodiment, the heat dissipation layer 360 made of a
material having relatively high thermal conductivity is adjacent to
the stack 350. Thus, heat in the stack 350 is easily transferred to
the heat dissipation layer 360. Additionally, the surface area of
the heat dissipation layer 360 is larger than that of the stack
350. Thus, heat is transferred through the larger boundary surface
(the boundary surface between the stack 350 and the heat
dissipation layer 360 and the boundary surface between the heat
dissipation layer 360 and the bottom shield gap layer 4).
Therefore, the efficiency of heat dissipation of the MR element 300
improves.
[0177] Detection of the signal magnetic field is performed in
accordance with a variation in the orientation of magnetization of
the free layer 354. Therefore, the reproducing track width Tw and
the MR height of the MR element 300 can be reduced in accordance
with the track width of the magnetic recording medium in order to
adapt to the increase in the density of the magnetic recording
medium. In the embodiment, the heat dissipation area (the area of
the boundary surface through which heat is transferred) can be
ensured by the heat dissipation layer 360 even if the free layer
354 is reduced in size. In short, the efficiency of heat
dissipation of the MR element can be improved while adapting to
high-density recording.
[0178] <Effect of Heat Dissipation Layer>
[0179] FIG. 41 shows the result of measurement of a rise in the
temperature of the MR element 300 of the embodiment through which a
current of 4 mA to 8 mA is passed. The thickness of the heat
dissipation layer 360 is equal to 10 nm, and the length of the heat
dissipation layer 360 in the direction of the reproducing track
width is equal to 1.0 .mu.m. The distance between the medium facing
surface S of the heat dissipation layer 360 and the opposite face
is equal to 0.8 .mu.m and is 0.5 .mu.m longer than the distance
between the medium facing surface S of the stack 350 and the
opposite face. FIG. 41 also shows experimental data on the MR
element in which the heat dissipation layer 360 is not provided, as
data to be compared.
[0180] As shown in FIG. 41, the heat dissipation layer 360 is
provided between the stack 350 and the bottom shield gap layer 4,
whereby the temperature rise can be reduced by about 40%.
[0181] <Optimum Thickness of Heat Dissipation Layer>
[0182] FIG. 42 is a plot of a correlation between the thickness of
the heat dissipation layer 360 and the rise in the temperature of
the MR element. In FIG. 42, the temperature rise is expressed as a
relative value to the temperature rise (.degree. C.) which occurs
when the thickness of the stack 350 is equal to 0.5 nm. In FIG. 42,
a direct-current constant current of 6 mA is passed through the MR
element 300.
[0183] FIG. 42 also shows asymmetry of a plus output and a minus
output of a read output (a voltage output) of the MR element 300
when the magnetic fields (S and N) from the magnetic recording
medium are switched in a state in which the thin film magnetic head
is caused to face the magnetic recording medium. The asymmetry Asym
is determined by equation (1) described by referring to the first
embodiment. Generally, the MR element requires the asymmetry which
is limited so as to fall within a range of .+-.10%.
[0184] As shown in FIG. 42, when the thickness of the heat
dissipation layer 360 is less than 1 nm, little heat dissipation
effect of the MR element 300 is achieved. On the other hand, when
the thickness of the heat dissipation layer 360 is more than 100
nm, the asymmetry exceeds 10% (it is possible that this occurs
because of an influence of the magnetic field generated by the
sense current diverted to the heat dissipation layer 360). It is
therefore desirable that the thickness of the heat dissipation
layer 360 is within a range of from 1 nm to 100 nm.
[0185] As described above, according to the embodiment, the heat
dissipation layer 360 is adjacent to the stack 350 of the MR
element 300. Therefore, the area of the heat dissipation layer 360
required for heat dissipation can be ensured while reducing the MR
height and the like of the MR element 300 in accordance with the
track width of the magnetic recording medium. In other words, the
efficiency of heat dissipation can be improved while adapting to
the increase in the density of the magnetic recording medium.
[0186] Joule's heat of the MR element 300 is generated,
particularly, at the center of the stack 350 in the direction of
the track width. In the embodiment, the distance between the medium
facing surface S of the heat dissipation layer 360 and the opposite
face is longer. Therefore, heat generated at the center of the
stack 350 can be efficiently dissipated, compared to the case where
the length of the heat dissipation layer 360 is longer in the
direction of the reproducing track width.
[0187] Furthermore, the heat dissipation layer 360 is made of a
nonmagnetic metal film having higher resistance than the resistance
of the stack 350. Therefore, a relatively small sense current is
diverted to the heat dissipation layer 360.
[0188] [Fourth Embodiment]
[0189] Next, an MR element 400 according to a fourth embodiment of
the invention will be described. The fourth embodiment differs from
the third embodiment in that a heat dissipation layer is provided
on a stack, but the other configuration of the fourth embodiment is
the same as that of the third embodiment. Only a difference between
the third and fourth embodiments will be described below, and the
description of the other configuration is omitted.
[0190] FIG. 43 shows a sectional structure of the stack and the
heat dissipation layer of the MR element 400 of the fourth
embodiment. FIG. 43 shows a cross section perpendicular to the
medium facing surface S (i.e., a cross section corresponding to a
cross section of the third embodiment shown in FIG. 25). A heat
dissipation layer 361 is formed on the stack 350. The heat
dissipation layer 361 is made of nonmagnetic metal of high
resistance (Zn, Bi, Ta, Pt, Pd or the like), similarly to the heat
dissipation layer 360 of the first embodiment. The surface area of
the heat dissipation layer 361 is identical with that of the stack
350.
[0191] FIG. 44 shows a step of a method of manufacturing the MR
element of the fourth embodiment. As shown in FIG. 44, similarly to
the third embodiment, the insulating layer 2, the bottom shield
layer 3 and the bottom shield gap layer 4 are stacked on the
substrate 1. Furthermore, the stacked film 305 for forming the
stack 350 is formed on the bottom shield gap layer 4. The structure
of the stacked film 305 is the same as that of the third
embodiment.
[0192] Then, a heat dissipation layer forming film 361A made of
nonmagnetic metal of high resistance (Zn, Bi, Ta, Pt or Pd) is
formed with a thickness of 1 nm to 100 nm on the stacked film 305
by sputtering. Then, a photoresist pattern 306c is formed at a
predetermined position on the heat dissipation layer forming film
361A. The heat dissipation layer forming film 361A is etched by
using the photoresist pattern 306c as a mask, whereby the heat
dissipation layer 361 shown in FIG. 43 is formed. Thus, it is
possible to obtain the structure in which the heat dissipation
layer 361 is formed on the stack 350. After that, the thin film
magnetic head is completed through the same steps as the steps of
the third embodiment shown in FIG. 29 to FIGS. 34A and 34B.
[0193] According to the embodiment, heat generated in the stack 350
of the MR element is transferred to the top shield gap layer 8 and
the top shield layer 9 through the heat dissipation layer 361.
Therefore, obtained is the same effect as the effect of the third
embodiment, i.e., the effect of being able to improve the
efficiency of heat dissipation.
[0194] [Fifth Embodiment]
[0195] Next, an MR element according to a fifth embodiment of the
invention will be described. The fifth embodiment differs from the
third embodiment in that a stack is sandwiched between two heat
dissipation layers, but the other configuration of the fifth
embodiment is the same as that of the third embodiment. Only a
difference between the third and fifth embodiments will be
described below, and the description of the other configuration is
omitted.
[0196] FIG. 45 shows a sectional structure of the stack and the
heat dissipation layers of an MR element 500 of the fifth
embodiment. FIG. 45 shows a cross section perpendicular to the
medium facing surface S (i.e., a cross section corresponding to a
cross section of the third embodiment shown in FIG. 25). In the
embodiment, a first heat dissipation layer 362 is formed under the
stack 350, and a second heat dissipation layer 363 is formed on the
stack 350. Similarly to the heat dissipation layer 360 of the first
embodiment, the first and second heat dissipation layers 362 and
363 are made of nonmagnetic metal of high resistance (Zr, Bi, Ta,
Pt, Pd or the like) and are each formed with a thickness of 1 nm to
100 nm. The surface area of the first heat dissipation layer 362 is
identical with that of the heat dissipation layer 360 of the first
embodiment (see FIG. 26) and is larger than that of the stack 350.
On the other hand, the surface area of the second heat dissipation
layer 363 is identical with that of the stack 350.
[0197] FIG. 46 shows a step of a method of manufacturing the MR
element 500 of the fifth embodiment. As shown in FIG. 46, similarly
to the third embodiment, the insulating layer 2, the bottom shield
layer 3 and the bottom shield gap layer 4 are stacked on the
substrate 1. Furthermore, in the same manner as the first
embodiment, a pattern of the first heat dissipation layer 362 made
of nonmagnetic metal of high resistance (Zr, Bi, Ta, Pt or Pd) is
formed on the bottom shield gap layer 4.
[0198] Then, the stacked film 305 for forming the stack 350 is
formed so as to coat the first heat dissipation layer 362 and the
bottom shield gap layer 4. The structure of the stacked film 305 is
the same as that of the first embodiment. Furthermore, a heat
dissipation layer forming film 363A made of nonmagnetic metal of
high resistance (Zr, Bi, Ta, Pt or Pd), for forming the second heat
dissipation layer 363 is stacked with a thickness of 1 nm to 100 nm
on the stacked film 305 by sputtering. Then, a photoresist pattern
306d is formed on the heat dissipation layer forming film 363A at a
position where the heat dissipation layer 363 is to be formed. The
heat dissipation layer forming film 363A is etched by using the
photoresist pattern 306d as a mask, whereby the second heat
dissipation layer 363 shown in FIG. 45 is formed. Thus, it is
possible to form the structure in which the stack 350 is sandwiched
between the two heat dissipation layers 362 and 363. After that,
the thin film magnetic head is completed through the same steps as
the steps of the third embodiment shown in FIG. 29 to FIGS. 34A and
34B.
[0199] According to the embodiment, heat generated in the stack 350
of the MR element is transferred to the top shield gap layer 8, the
top shield layer 9, the bottom shield gap layer 4 and the bottom
shield layer 3 through the bottom and top heat dissipation layers
362 and 363. Therefore, the effect of further improving the
efficiency of heat dissipation is obtained compared to the first
embodiment.
[0200] [Sixth Embodiment]
[0201] Next, an MR element according to a sixth embodiment of the
invention will be described. The MR element of the sixth embodiment
differs from that of the third embodiment in that the MR element
has an insulating layer between an antiferromagnetic layer and a
heat dissipation layer, but the other configuration of the sixth
embodiment is the same as that of the third embodiment. Only a
difference between the third and sixth embodiments will be
described below, and the description of the other configuration is
omitted.
[0202] FIG. 47 shows a sectional structure of the stack and the
heat dissipation layer of the MR element of the sixth embodiment.
FIG. 47 shows a cross section perpendicular to the medium facing
surface S (i.e., a cross section corresponding to a cross section
of the third embodiment shown in FIG. 25). In the embodiment, an
insulating layer 365 for preventing a diversion of a sense current
to the heat dissipation layer 360 is formed on the surface of the
heat dissipation layer 360 close to the stack 350. The insulating
layer 365 is composed of an oxide layer formed by plasma oxidation
of the surface of the heat dissipation layer 360 made of the
above-mentioned nonmagnetic metal of high resistance. Desirably,
the thickness of the insulating layer 365 is 2 nm to 30 nm. When
the thickness of the insulating layer 365 is less than 2 nm, it is
difficult to prevent the diversion of the sense current to the heat
dissipation layer 360. When the thickness of the insulating layer
365 is more than 30 nm, the insulating layer 365 interferes with
heat transfer from the antiferromagnetic layer 351 to the heat
dissipation layer 360. The insulating layer 365 may be made of an
oxide film such as Al.sub.2O.sub.3 or SiO.sub.2.
[0203] FIGS. 48 to 50 show a method of manufacturing the MR element
of the sixth embodiment. First, as shown in FIG. 48, similarly to
the third embodiment, the insulating layer 2, the bottom shield
layer 3 and the bottom shield gap layer 4 are stacked on the
substrate 1. The heat dissipation layer forming film 306 made of
nonmagnetic metal of high resistance (Zr, Bi, Ta, Pt or Pd) is
formed on the bottom shield gap layer 4. Then, the surface of the
heat dissipation layer forming film 306 is subjected to plasma
oxidation, whereby the insulating layer 365 of 2 nm to 30 nm thick
is formed.
[0204] Then, as shown in FIG. 49, a photoresist pattern 306e is
formed at a predetermined position on the heat dissipation layer
forming film 306. The insulating layer 365 and the heat dissipation
layer forming film 306 are etched by using the photoresist pattern
306e as a mask, whereby the heat dissipation layer 360 having the
insulating layer 365 on the top surface thereof is formed. Then, as
shown in FIG. 50, the stacked film 305 for forming the stack 350 is
formed so as to coat the insulating layer 365 and the bottom shield
gap layer 4. The structure of the stacked film 305 is the same as
that of the third embodiment. After that, the thin film magnetic
head is completed through the same steps as the steps of the third
embodiment shown in FIG. 29 to FIGS. 34A and 34B.
[0205] According to the embodiment, heat generated in the stack 350
is dissipated to the bottom shield gap layer 4 and the bottom
shield layer 3 through the heat dissipation layer 360 having a
large surface area. Therefore, obtained is the same effect as the
effect of the first embodiment, i.e., the effect of being able to
ensure necessary efficiency of heat dissipation even if the MR
element is reduced in size. Furthermore, the insulating layer 365
is interposed between the stack 350 and the heat dissipation layer
360. Therefore, obtained is an effect of being able to prevent the
diversion of the sense current to the heat dissipation layer 360
and thus able to reduce waste of power.
[0206] [Seventh Embodiment]
[0207] Next, a seventh embodiment of the invention will be
described. A stack of an MR element of the seventh embodiment
differs from that of the third embodiment in that the surface of
the stack opposite to the medium facing surface is inclined to the
medium facing surface, but the other configuration of the seventh
embodiment is the same as that of the third embodiment. Only a
difference between the third and seventh embodiments will be
described below, and the description of the other configuration is
omitted.
[0208] FIG. 51 shows a sectional structure of the stack and the
heat dissipation layer of an MR element 700 of the seventh
embodiment. FIG. 51 shows a cross section perpendicular to the
medium facing surface S (i.e., a cross section corresponding to a
cross section of the third embodiment shown in FIG. 25). A heat
dissipation layer 760 made of nonmagnetic metal of high resistance
(Zr, Bi, Ta, Pt or Pd) is formed on the bottom shield gap layer 4.
An antiferromagnetic layer 751 made of, for example, PtMn; a pinned
layer 752 made of, for example, Co; a nonmagnetic metal layer 753
made of, for example, Cu; a free layer 754 made of, for example,
NiFe; and a protective layer 758 made of, for example, Ta are
stacked in sequence on the heat dissipation layer 760.
[0209] The end face (the right end surface in FIG. 51) of a stack
750 opposite to the medium facing surface S is formed as a tapered
surface 750A. The tapered surface 750A is formed so that the free
layer 754, the nonmagnetic metal layer 753, the pinned layer 752,
the antiferromagnetic layer 751 and the heat dissipation layer 760
may have the distance between the medium facing surface S and the
opposite face which becomes longer in this order.
[0210] FIGS. 52 and 53 show a method of manufacturing the MR
element 700 of the embodiment. As shown in FIG. 52, the insulating
layer 2, the bottom shield layer 3 and the bottom shield gap layer
4 are stacked on the substrate 1 through the same steps as the
steps of the third embodiment. Then, nonmagnetic metal of high
resistance containing any one element of Zr, Bi, Ta, Pt and Pd is
deposited with a thickness of 1 nm to 100 nm on the bottom shield
gap layer 4 by sputtering, whereby a heat dissipation layer forming
film 706 for forming the heat dissipation layer 760 is formed.
Then, a stacked film 705 for forming the stack 750 is formed on the
heat dissipation layer forming film 706. The stacked film 705 has a
stacked structure comprising the antiferromagnetic layer 751 made
of, for example, PtMn; the pinned layer 752 that is a magnetic
layer made of, for example, Co; the nonmagnetic metal layer 753
made of, for example, Cu; the free layer 754 made of, for example,
NiFe; and the protective layer 758 made of, for example, Ta.
[0211] Then, as shown in FIG. 53, a photoresist pattern 705a is
formed on the stacked film 705 at a position where the stack 750 is
to be formed. The stacked film 705 is obliquely etched by means of
ion milling using, for example, Ar ions or the like by using the
photoresist pattern 705a as a mask, whereby the tapered surface
750A is formed on the side opposite to the medium facing surface S.
An inclination of the tapered surface 750A can be controlled by the
angle .alpha. of incidence of ions and the thickness t of the
photoresist pattern 705a. The angle .alpha. of incidence of ions is
adjusted within a range of from 10 degrees to 60 degrees, and the
thickness t of the photoresist pattern 705a is adjusted within a
range of from 0.5 .mu.m to 5.0 .mu.m. For example, when the angle
.alpha. of incidence of ions is 10 degrees and the thickness t of
the photoresist pattern 705a is 3 .mu.m, the taper angle .theta. of
the tapered surface 750A is 15 degrees. After that, the thin film
magnetic head is completed through the same steps as the steps of
the third embodiment shown in FIG. 29 to FIGS. 34A and 34B.
[0212] The MR element configured as described above achieves the
following effect. That is, detection of the magnetic field is
performed in accordance with a variation in the orientation of
magnetization of the free layer 754, and therefore only the free
layer 754 can be reduced in size in order to adapt to the increase
in the density of the magnetic recording medium. In the embodiment,
the respective areas of the antiferromagnetic layer 751 and the
heat dissipation layer 760 are larger than the area of the free
layer 754. Even if the free layer 754 is reduced in size, the heat
dissipation area can be therefore ensured by the antiferromagnetic
layer 751 and the heat dissipation layer 760. In other words, the
efficiency of heat dissipation of the MR element can be improved
while adapting to high-density recording.
[0213] An insulating layer such as the insulating layer of the
fourth embodiment may be provided between the antiferromagnetic
layer 751 and the heat dissipation layer 760 of the stack 750 of
the MR element of the seventh embodiment.
[0214] Although the invention has been described above by referring
to some embodiments, the invention is not limited to these
embodiments and various modifications of the invention are
possible. For example, a stepped layer structure shown in FIG. 22
may be applied to the stack of the MR element according to any one
of the third to seventh embodiments. Moreover, as the film for
applying the bias magnetic field, a biasing ferromagnetic film and
a biasing antiferromagnetic film may be replaced with a hard
magnetic film (hard magnet). Moreover, the free layer and the
pinned layer may be each made of a stacked film comprising a
plurality of layers. Furthermore, the layers of the stack may be
stacked in reverse order: the free layer, the nonmagnetic metal
layer, the pinned layer and the antiferromagnetic layer may be
stacked in this order on the substrate. Moreover, the recording
head and the reproducing head may be stacked in reverse order.
[0215] Moreover, the stack of each of the above-mentioned
embodiments may be made of an AMR film or a tunnel junction type
magnetoresistive film (TMR film). Moreover, the MR element of each
of the above-mentioned embodiments may comprise an element using an
AMR film or an element using a TMR film. In the above-mentioned
embodiments, the description has been given with regard to the case
where the magnetic transducer of the invention is used in a
composite thin film magnetic head. However, the magnetic transducer
of the invention can be also used in a thin film magnetic head for
reproducing only. Furthermore, the magnetic transducer of the
invention can be applied to, for example, a sensor for sensing a
magnetic signal, a memory for storing a magnetic signal, or the
like, as well as the thin film magnetic head described by referring
to the above-mentioned embodiments.
[0216] As described above, according to a magnetic transducer, a
thin film magnetic head, a method of manufacturing a magnetic
transducer or a method of manufacturing a thin film magnetic head
of first aspect of the invention, the distance between one end
surface of the antiferromagnetic layer (the surface facing the
external magnetic field) and the opposite face is longer than the
distance between one end face of the soft magnetic layer (the
surface facing the external magnetic field) and the opposite face.
Thus, the area of the antiferromagnetic layer is larger than the
area of the soft magnetic layer. Therefore, the effect of improving
the efficiency of heat dissipation is achieved. Furthermore, even
if the soft magnetic layer is reduced in size, the heat dissipation
area can be ensured by the antiferromagnetic layer. Therefore, the
efficiency of heat dissipation of the magnetic transducer can be
improved while adapting to high-density recording.
[0217] More particularly, according to the magnetic transducer of
the first aspect of the invention, a difference between the
distance between the one end surface of the antiferromagnetic layer
(the surface facing the external magnetic field) and the opposite
face and the distance between the one end face of the soft magnetic
layer (the surface facing the external magnetic field) and the
opposite face is set to from 0.05 .mu.m to 1.0 .mu.m inclusive.
Therefore, it is possible to ensure that the heat dissipation
effect is obtained and to obtain symmetry of the plus output and
the minus output.
[0218] According to a magnetic transducer, a thin film magnetic
head, a method of manufacturing a magnetic transducer or a method
of manufacturing a thin film magnetic head of second aspect of the
invention, the heat dissipation layer adjacent to the
magneto-sensitive layer of the magnetic transducer is provided.
Thus, heat generated in the magneto-sensitive layer is dissipated
to the outside through the heat dissipation layer. As a result, the
effect of improving the efficiency of heat dissipation is
obtained.
[0219] More particularly, according to the magnetic transducer of
the second aspect of the invention, the thickness of the heat
dissipation layer is from 1 nm to 100 nm inclusive. Therefore, it
is possible to ensure that the heat dissipation effect is obtained.
Also, the asymmetry of the plus output and the minus output can be
within acceptable limits.
[0220] According to a magnetic transducer of another aspect of the
invention, the heat dissipation layer is made of a material having
higher resistance than resistance of the stack. Thus, the diversion
of the sense current to the heat dissipation layer is prevented.
Therefore, unnecessary power consumption is reduced.
[0221] According to a magnetic transducer of still another aspect
of the invention, the surface area of the heat dissipation layer is
larger than that of the stack. Even if the stack is reduced in size
in order to adapt to the increase in the recording density, the
surface area of the heat dissipation layer required for heat
dissipation can be therefore ensured.
[0222] According to a magnetic transducer of a still another aspect
of the invention, the insulating layer is provided between the
stack and the heat dissipation layer. Thus, the diversion of the
sense current to the heat dissipation layer is prevented.
Therefore, unnecessary power consumption is reduced.
[0223] Obviously many modifications and variations of the present
invention are possible in the light of the above teachings. It is
therefore to be understood that within the scope of the appended
claims the invention may be practiced otherwise than as
specifically described.
* * * * *