U.S. patent application number 10/383450 was filed with the patent office on 2003-10-16 for image sensor with processor controlled integration time.
Invention is credited to Tay, Hiok Nam.
Application Number | 20030193594 10/383450 |
Document ID | / |
Family ID | 28794503 |
Filed Date | 2003-10-16 |
United States Patent
Application |
20030193594 |
Kind Code |
A1 |
Tay, Hiok Nam |
October 16, 2003 |
Image sensor with processor controlled integration time
Abstract
An image sensor that has one or more pixels within a pixel
array. The pixels are arranged within a plurality of rows within
the array. Each row of the pixel array can be selected by a row
decoder in response to an edge of a control signal. The control
signal may be one of a plurality of signals generated by a
processor coupled to the image sensor. The processor can control
the exposure time of the pixels by varying the control signals. The
control signals may also have an embedded narrow pulse that is used
to determine the location of a "window" in the pixel array.
Inventors: |
Tay, Hiok Nam; (Irvine,
CA) |
Correspondence
Address: |
IRELL & MANELLA LLP
840 NEWPORT CENTER DRIVE
SUITE 400
NEWPORT BEACH
CA
92660
US
|
Family ID: |
28794503 |
Appl. No.: |
10/383450 |
Filed: |
March 6, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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60372902 |
Apr 16, 2002 |
|
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Current U.S.
Class: |
348/308 |
Current CPC
Class: |
H04N 5/35581 20130101;
H04N 5/3575 20130101; H04N 5/3535 20130101; H04N 5/3454 20130101;
H04N 5/343 20130101 |
Class at
Publication: |
348/308 |
International
Class: |
H04N 005/335 |
Claims
What is claimed is:
1. An image sensor that is connected to a processor which generates
a plurality of control signals, the control signals including a
first edge separated from a second edge by a control interval,
comprising: a pixel array that contains a plurality of rows of
pixels; and, a selection circuit that selects a row of said pixel
array to generate and retrieve pixel data from said pixel array by
resetting and reading said selected row of said pixel array, a time
interval between the resetting and reading of said selected row
being proportional to the control interval between the first and
second edges.
2. The image sensor of claim 1, wherein said selection circuit
includes a decoder circuit coupled to said pixel array, an address
generator coupled to said decoder circuit and a pulse detector
coupled to said address generator and the processor.
3. The image sensor of claim 2, wherein said address generator
circuit includes a first counter that is started in response to the
first edge and a second counter that is started in response to the
second edge.
4. The image sensor of claim 3, wherein said selection circuit
includes a narrow pulse detector that is coupled to a third counter
of said address generator, said third counter being coupled to said
decoder circuit.
5. The image sensor of claim 3, wherein said decoder circuit
includes a multiplexor coupled to an address decoder, said
multiplexor being coupled to said first and second counters.
6. The image sensor of claim 5, wherein said selection circuit
includes a row driver coupled to a latch of said decoder circuit,
said latch being coupled to said address decoder.
7. The image sensor of claim 1, further comprising a light reader
circuit coupled to said pixel array.
8. The image sensor of claim 4, wherein said selection circuit
includes a counter/latch that is coupled to said narrow pulse
detector and said address generator.
9. The image sensor of claim 6, wherein said selection circuit
includes a phase sequence decoder that is coupled to said light
reader circuit and said row driver.
10. An image sensor that is connected to a processor which
generates a plurality of control signals including a first pulse
that has a first width and a second pulse that has a different
second width, comprising: a pixel array that contains a plurality
of rows of pixels; and, a selection circuit that selects a group of
rows of said pixel array, the group being a function of a location
of the second pulse relative to the first pulse.
11. The image sensor of claim 10, wherein said selection circuit
includes a decoder circuit coupled to said pixel array, an address
generator coupled to said decoder circuit and a pulse detector
coupled to said address generator and the processor.
12. The image sensor of claim 11, wherein said address generator
includes a first counter that is started in response to a first
edge in the plurality of control signals and a second counter that
is started in response to a second edge in the plurality of control
signals selection.
13. The image sensor of claim 12, wherein said logic circuit
includes a pulse detector that is coupled to a third counter of
said address generator, said third counter being coupled to said
decoder circuit.
14. The image sensor of claim 12, wherein said decoder circuit
includes a multiplexor coupled to an address decoder, said
multiplexor being coupled to said first and second counters.
15. The image sensor of claim 14, wherein said selection circuit
includes a row driver coupled to a latch of said decoder circuit,
said latch being coupled to said address decoder.
16. The image sensor of claim 10, further comprising a light reader
circuit coupled to said pixel array.
17. The image sensor of claim 13, wherein said selection circuit
includes a counter/latch that is coupled to said pulse detector and
said address generator.
18. The image sensor of claim 16, wherein said selection circuit
includes a phase sequence decoder that is coupled to said light
reader circuit and said row driver.
19. An image sensor, comprising: a pixel array that contains a
plurality of rows of pixels; an address decoder coupled to a row of
said pixel array; a multiplexor coupled to said address decoder; a
first address generator coupled to said multiplexor; and, a second
address generator coupled to said multiplexor.
20. The system of claim 19, further comprising a pulse detector
coupled to said first and second address generators.
Description
REFERENCE TO CROSS RELATED APPLICATION
[0001] This application claims priority under 35 U.S.C .sctn.119(e)
to provisional application No. 60/372,902 filed on Apr. 16,
2002.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The subject matter disclosed generally relates to the field
of semiconductor image sensors.
[0004] 2. Background Information
[0005] Photographic equipment such as digital cameras and digital
camcorders contain electronic image sensors that capture light for
processing into a still or video image, respectively. There are two
primary types of electronic image sensors, charge coupled devices
(CCDs) and complimentary metal oxide semiconductor (CMOS) sensors.
CCD image sensors have relatively high signal to noise ratios (SNR)
that provide quality images. Additionally, CCDs can be fabricated
to have pixel arrays that are relatively small while conforming
with most camera and video resolution requirements. A pixel is the
smallest discrete element of an image. For these reasons, CCDs are
used in most commercially available cameras and camcorders.
[0006] CMOS sensors are faster and consume less power than CCD
devices. Additionally, CMOS fabrication processes are used to make
many types of integrated circuits. Consequently, there is a greater
abundance of manufacturing capacity for CMOS sensors than CCD
sensors.
[0007] To date there has not been developed a CMOS sensor that has
the same SNR and pixel pitch requirements as commercially available
CCD sensors. Pixel pitch is the space between the centers of
adjacent pixels. It would be desirable to provide a CMOS sensor
that has relatively high SNR while providing a commercially
acceptable pixel pitch.
[0008] The image sensor is typically connected to an external
processor and external memory. The external memory stores data from
the image sensor. The processor processes the stored data. The data
includes one or more images generated by exposing the pixels for a
predetermined time interval. The exposure time of the pixels is
typically controlled by an internal clock(s) of the image
sensor.
[0009] The exposure time of a picture frame is established by a
word written into an exposure time register. Changing the exposure
time requires writing new data into the register and then reading
the data. In video and fast successive still photo shots this
technique may create confusion regarding the exposure time of
incoming pixel data, thereby creating instability in the system. It
would be desirable to provide processor control of the exposure
time of the pixels that improves stability and does not require an
undesirable number of pins and signals.
[0010] Camera or camcorder products typically have an auto-focus
function. To increase the speed of an auto-focus cycle the camera
may be designed to process only a "window" of the pixel array. The
auto-focus routine may require the window to move around the pixel
array of the image sensor. It would be desirable to provide
processor control of the window data in a manner that minimizes the
pin count and number of signals required for the image sensor.
BRIEF SUMMARY OF THE INVENTION
[0011] An image sensor coupled to a process that generates a
plurality of control signals. The image sensor includes a pixel
array that is arranged into a number of rows. The sensor may also
contain a logic circuit that selects a row of the pixel array to
generate and retrieve pixel data in response to a first edge and a
second edge of the control signals. A time interval between a
resetting and a reading of the selected row is proportional to an
interval between the first and second edges of the control
signals.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIGS. 1 is a schematic of an embodiment of an image
sensor;
[0013] FIG. 2 is a schematic of an embodiment of a pixel of the
image sensor;
[0014] FIG. 3 is a schematic of an embodiment of a light reader
circuit of the image sensor;
[0015] FIG. 4 is a flowchart for a first mode of operation of the
image sensor;
[0016] FIG. 5 is a timing diagram for the first mode of operation
of the image sensor;
[0017] FIG. 6 is a diagram showing the levels of a signal across a
photodiode of a pixel;
[0018] FIG. 7 is a schematic for a logic circuit for generating the
timing diagrams of FIG. 5;
[0019] FIG. 8 is a schematic of a logic circuit for generating a
RST signal for a row of pixels;
[0020] FIG. 9 is a timing diagram for the logic circuit shown in
FIG. 8;
[0021] FIG. 10 is a flowchart showing a second mode of operation of
the image sensor;
[0022] FIG. 11 is a timing diagram for the second mode of operation
of the image sensor;
[0023] FIG. 12 is a schematic of an embodiment of a row decoder of
the image sensor;
[0024] FIG. 13 is a timing diagram for the row decoder shown in
FIG. 12;
[0025] FIG. 14 is a timing diagram showing the transfer of pixel
data when the image sensor is in a low noise mode;
[0026] FIG. 15 is a timing diagram showing the transfer of pixel
data when the image sensor is in an extended dynamic range
mode;
[0027] FIG. 16 is an illustration of a window of the pixel
array;
[0028] FIG. 17 is timing diagram showing an embedded narrow pulse
used to determine a start location of the window.
DETAILED DESCRIPTION
[0029] Disclosed is an image sensor that has one or more pixels
within a pixel array. The pixels are arranged within a plurality of
rows within the array. Each row of the pixel array can be selected
by a row decoder in response to an edge of a control signal. The
control signal may be one of a plurality of signals generated by a
processor coupled to the image sensor. The processor can control
the exposure time of the pixels by varying the control signals. The
control signals may also have an embedded narrow pulse that is used
to determine the location of a "window" in the pixel array.
[0030] The pixel may be a three transistor structure that minimizes
the pixel pitch of the image sensor. The entire image sensor is
preferably constructed with CMOS fabrication processes and
circuits. The CMOS image sensor has the characteristics of being
high speed, low power consumption, small pixel pitch and a high
SNR.
[0031] Referring to the drawings more particularly by reference
numbers, FIG. 1 shows an image sensor 10. The image sensor 10
includes a pixel array 12 that contains a plurality of individual
photodetecting pixels 14. The pixels 14 are arranged in a
two-dimensional array of rows and columns.
[0032] The pixel array 12 is coupled to a light reader circuit 16
by a bus 18 and to a row decoder 20 by control lines 22. The row
decoder 20 can select an individual row of the pixel array 12. The
light reader 16 can then read specific-discrete columns within the
selected row. Together, the row decoder 20 and light reader 16
allow for the reading of an individual pixel 14 in the array
12.
[0033] The light reader 16 may be coupled to an analog to digital
converter 24 (ADC) by output line(s) 26. The ADC 24 generates a
digital bit string that corresponds to the amplitude of the signal
provided by the light reader 16 and the selected pixels 14.
[0034] The ADC 24 may be coupled to line buffers 28 by data lines
30. The line buffers 28 may include separate pairs of buffers for
first image data and second image data. The line buffers 28 are
coupled to a data interface 32 that transfers data to a processor
34 over bus 36. The processor 34 may be coupled to memory 38 by bus
40. Although the memory 38 is shown coupled to the processor 34, it
is to be understood that the system may have other configurations.
For example, the processor 34 and memory 38 may be coupled to the
interface 32 by separate busses.
[0035] The data interface 32 may be connected to a control line
INTG 42 which provides a control signal from the processor 34. The
control signal may contain a series of pulses that control the
transfer of data to the processor 34. The pixel data may be
transferred to the processor 34 in an interleaving manner. For
example, the buffers 28 may store pixel data of a first image and a
second image. The data interface 32 may interleave the data by
sending a first line of the first image and then a first line of
the second image and so forth and so on.
[0036] The image sensor 10 may have registers 44 that store mode
and gain values. The values can be provided to the data interface
32, buffers 28, light reader 16 and row decoder 20 over lines 46,
48, 50 and 52, respectively. The values can be loaded into the
registers 44 through lines 54, 56 and 58. The image sensor 10 may
also have clock circuits 60 that provide CLK timing signals over
line 62.
[0037] The light reader circuit 16 may be coupled to a column
decoder 64 by control lines 66. The decoder 64 selects a column
within the pixel array 12 to generate and retrieve pixel data from
the pixels 14. The decoder 64 is coupled to a counter 68 by a bus
70. The counter 68 provides a count value that causes the decoder
64 to switch the selection of a column in the pixel array 12.
Counter 68 is also connected to an input line HD 72 and an output
line HDF 74.
[0038] The row decoder 20 may include a plurality of row drivers 76
that are coupled to the pixel array 12. The row drivers 76 may be
coupled to decoders 78 and counters 80. The counters 80 may be
coupled to a counter/latch circuit 82.
[0039] The row decoder 20 may also include a phase sequence decoder
84. The phase sequence decoder 84 may be coupled to the light
reader 16, row drivers 76 and decoders 78 by control signals 86.
The row decoder 20 may further include a wide pulse detector 88 and
a narrow pulse detector 90. The wide pulse detector 88 may be
connected to the counters 80 by LEAD 92 and LAG 94 control signals,
respectively. The narrow pulse detector 90 may be connected to the
counter/latch 82 by control signal NP 96. The pulse detectors 88
and 90 may be connected to the INTG control line 42 that is coupled
to the processor 34. The counter/latch 82, narrow pulse detector 90
and phase sequence decoder 84 may be connected to the mode line 52
of register 44.
[0040] FIG. 2 shows an embodiment of a cell structure for a pixel
14 of the pixel array 12. The pixel 14 may contain a photodetector
100. By way of example, the photodetector 100 may be a photodiode.
The photodetector 100 may be connected to a reset transistor 112.
The photodetector 100 may also be coupled to a select transistor
114 through a level shifting transistor 116. The transistors 112,
114 and 116 may be field effect transistors (FETs).
[0041] The gate of reset transistor 112 may be connected to a RST
line 118. The drain node of the transistor 112 may be connected to
IN line 120. The gate of select transistor 114 may be connected to
a SEL line 122. The source node of transistor 114 may be connected
to an OUT line 124. The RST 118 and SEL lines 122 may be common for
an entire row of pixels in the pixel array 12. Likewise, the IN 120
and OUT 124 lines may be common for an entire column of pixels in
the pixel array 12. The RST line 118 and SEL line 122 are connected
to the row decoder 20 and are part of the control lines 22.
[0042] FIG. 3 shows an embodiment of a light reader circuit 16. The
light reader 16 may include a plurality of double sampling
capacitor circuits 150 each connected to an OUT line 124 of the
pixel array 12. Each double sampling circuit 150 may include a
first capacitor 152 and a second capacitor 154. The first capacitor
152 is coupled to the OUT line 124 and ground GND1 156 by switches
158 and 160, respectively. The second capacitor 154 is coupled to
the OUT line 124 and ground GND1 by switches 162 and 164,
respectively. Switches 158 and 160 are controlled by a control line
SAM1 166. Switches 162 and 164 are controlled by a control line
SAM2 168. The capacitors 152 and 154 can be connected together to
perform a voltage subtraction by closing switch 170. The switch 170
is controlled by a control line SUB 172.
[0043] The double sampling circuits 150 are connected to an
operational amplifier 180 by a plurality of first switches 182 and
a plurality of second switches 184. The amplifier 180 has a
negative terminal-coupled to the first capacitors 152 by the first
switches 182 and a positive terminal+coupled to the second
capacitors 154 by the second switches 184. The operational
amplifier 180 has a positive output+connected to an output line OP
188 and a negative output-connected to an output line OM 186. The
output lines 186 and 188 are connected to the ADC 24 (see FIG.
1).
[0044] The operational amplifier 180 provides an amplified signal
that is the difference between the voltage stored in the first
capacitor 152 and the voltage stored in the second capacitor 154 of
a sampling circuit 150 connected to the amplifier 180. The gain of
the amplifier 180 can be varied by adjusting the variable
capacitors 190. The variable capacitors 190 may be discharged by
closing a pair of switches 192. The switches 192 may be connected
to a corresponding control line (not shown). Although a single
amplifier is shown and described, it is to be understood that more
than one amplifier can be used in the light reader circuit 16.
[0045] FIGS. 4 and 5 show an operation of the image sensor 10 in a
first mode also referred to as a low noise mode. In process block
300 a reference signal is written into each pixel 14 of the pixel
array and then a first reference output signal is stored in the
light reader 16. Referring to FIGS. 2 and 5, this can be
accomplished by switching the RST 118 and IN 120 lines from a low
voltage to a high voltage to turn on transistor 112. The RST line
118 is driven high for an entire row. IN line 120 is driven high
for an entire column. In the preferred embodiment, RST line 118 is
first driven high while the IN line 120 is initially low.
[0046] The RST line 118 may be connected to a tri-state buffer (not
shown) that is switched to a tri-state when the IN line 120 is
switched to a high state. This allows the gate voltage to float to
a value that is higher than the voltage on the IN line 120. This
causes the transistor 112 to enter the triode region. In the triode
region the voltage across the photodiode 100 is approximately the
same as the voltage on the IN line 120. Generating a higher gate
voltage allows the photodetector to be reset at a level close to
Vdd. CMOS sensors of the prior art reset the photodetector to a
level of Vdd-Vgs, where Vgs can be up to 1 V.
[0047] The SEL line 122 is also switched to a high voltage level
which turns on transistor 114. The voltage of the photodiode 100 is
provided to the OUT line 124 through level shifter transistor 116
and select transistor 114. The SAM1 control line 166 of the light
reader 16 (see FIG. 3) is selected so that the voltage on the OUT
line 124 is stored in the first capacitor 152.
[0048] Referring to FIG. 4, in process block 302 the pixels of the
pixel array are then reset and reset output signals are then stored
in the light reader 16. Referring to FIGS. 2 and 5 this can be
accomplished by driving the RST line 118 low to turn off the
transistor 112 and reset the pixel 14. Turning off the transistor
112 will create reset noise, charge injection and clock feedthrough
voltage that resides across the photodiode 100. As shown in FIG. 6
the noise reduces the voltage at the photodetector 100 when the
transistor 112 is reset.
[0049] The SAM2 line 168 is driven high, the SEL line 122 is driven
low and then high again, so that a level shifted voltage of the
photodiode 100 is stored as a reset output signal in the second
capacitor 154 of the light reader circuit 16. Process blocks 300
and 302 are repeated for each pixel 14 in the array 12.
[0050] Referring to FIG. 4, in process block 304 the reset output
signals are then subtracted from the first reference output signals
to create noise output signals that are then converted to digital
bit strings by ADC 24. The digital output data can be stored within
the line buffers 28 and eventually transferred and stored within
the external memory 38. The noise signals may be referred to as a
first image. Referring to FIG. 3, the subtraction process can be
accomplished by closing switches 182, 184 and 170 of the light
reader circuit 16 (FIG. 3) to subtract the voltage across the
second capacitor 154 from the voltage across the first capacitor
152.
[0051] Referring to FIG. 4, in block 306 light response output
signals are sampled from the pixels 14 of the pixel array 12 and
stored in the light reader circuit 16. The light response output
signals correspond to the optical image that is being detected by
the image sensor 10. Referring to FIGS. 2, 3 and 5 this can be
accomplished by having the IN 120, SEL 122 and SAM2 lines 168 in a
high state and RST 118 in a low state. The second capacitor 152 of
the light reader circuit 16 stores a level shifted voltage of the
photodiode 100 as the light response output signal.
[0052] Referring to FIG. 4, in block 308 a second reference output
signal is then generated in the pixels 14 and stored in the light
reader circuit 16. Referring to FIGS. 2, 3 and 5, this can be
accomplished similar to generating and storing the first reference
output signal. The RST line 118 is first driven high and then into
a tri-state. The IN line 120 is then driven high to cause the
transistor 112 to enter the triode region so that the voltage
across the photodiode 100 is the voltage on IN line 120. The SEL
122 and SAM2 168 lines are then driven high to store the second
reference output voltage in the first capacitor 154 of the light
reader circuit 16. Process blocks 306 and 308 are repeated for each
pixel 14 in the array 12.
[0053] Referring to FIG. 4, in block 310 the light response output
signal is subtracted from the second reference output signal to
create a normalized light response output signal. The normalized
light response output signal is converted into a digital bit string
to create normalized light output data that is transferred to the
processor 34. The normalized light response output signals may be
referred to as a second image. Referring to FIGS. 2, 3 and 5 the
subtraction process can be accomplished by closing switches 170,
182 and 184 of the light reader 16 to subtract the voltage across
the first capacitor 152 from the voltage across the second
capacitor 154. The difference is then amplified by amplifier 180
and converted into a digital bit string by ADC 24 as light response
data.
[0054] Referring to FIG. 4, in block 312 the noise data is
retrieved from memory 38. In block 314 the noise data, first image,
is combined (subtracted) with the normalized light output data,
second image, by the processor 34. The noise data corresponds to
the first image and the normalized light output data corresponds to
the second image. The second reference output signal is the same or
approximately the same as the first reference output signal such
that the present technique subtracts the noise data, due to reset
noise, charge injection and clock feedthrough, from the normalized
light response signal. This improves the signal to noise ratio of
the final image data.
[0055] The process described is performed in a sequence across the
various rows of the pixels in the pixel array 12. As shown in FIG.
5, the n-th row in the pixel array may be generating noise signals
while the n-1-th row generates normalized light response signals,
where 1 is the exposure duration in multiples of a line period.
[0056] The various control signals RST, SEL, IN, SAM1, SAM2 and SUB
can be generated in the circuit generally referred to as the phase
sequence decoder 84. FIG. 7 shows an embodiment of logic to
generate the IN, SEL, SAM1, SAM2 and RST signals in accordance with
the timing diagram of FIG. 5. The logic may include a plurality of
comparators 350 with one input connected to a counter 68 and
another input connected to hardwired signals that contain a lower
count value and an upper count value. The counter 68 sequentially
generates a count. The comparators 350 compare the present count
with the lower and upper count values. If the present count is
between the lower and upper count values the comparators 350 output
a logical 1.
[0057] The comparators 350 are connected to plurality of AND gates
356 and OR gates 358. The OR gates 358 are connected to latches
360. The latches 360 provide the corresponding IN, SEL, SAM1, SAM2
and RST signals. The AND gates 356 are also connected to a mode
line 364. To operate in accordance with the timing diagram shown in
FIG. 5, the mode line 364 is set at a logic 1.
[0058] The latches 360 switch between a logic 0and a logic 1 in
accordance with the logic established by the AND gates 356, OR
gates 358, comparators 350 and the present count of the counter
352. For example, the hardwired signals for the comparator coupled
to the IN latch may contain a count values of 6 and a count value
of 24. If the count from the counter is greater or equal to 6 but
less than 24 the comparator 350 will provide a logic 1 that will
cause the IN latch 360 to output a logic 1. The lower and upper
count values establish the sequence and duration of the pulses
shown in FIG. 5. The mode line 364 can be switched to a logic 0
which causes the image sensor to function in a second mode.
[0059] The sensor 10 may have a plurality of reset RST(n) drivers
370, each driver 370 being connected to a row of pixels. FIGS. 8
and 9 show an exemplary driver circuit 370 and the operation of the
circuit 370. Each driver 370 may have a pair of NOR gates 372 that
are connected to the RST and SAM1 latches shown in FIG. 7. The NOR
gates control the state of a tri-state buffer 374. The tri-state
buffer 374 is connected to the reset transistors in a row of
pixels. The input of the tri-state buffer is connected to an AND
gate 376 that is connected to the RST latch and a row enable
ROWEN(n) line.
[0060] FIGS. 10 and 11 show operation of the image sensor in a
second mode also referred to as an extended dynamic range mode. In
this mode the image provides a sufficient amount of optical energy
so that the SNR is adequate even without the noise cancellation
technique described in FIGS. 4 and 5. Although it is to be
understood that the noise cancellation technique shown in FIGS. 4
and 5 can be utilized while the image sensor 10 is in the extended
dynamic range mode. The extended dynamic mode has both a short
exposure period and a long exposure period. Referring to FIG. 10,
in block 400 each pixel 14 is reset to start a short exposure
period. The mode of the image sensor can be set by the processor 34
through register 44 to determine whether the sensor should be in
the low noise mode, or the extended dynamic range mode.
[0061] In block 402 a short exposure output signal is generated in
the selected pixel and stored in the second capacitor 154 of the
light reader circuit 16.
[0062] In block 404 the selected pixel is then reset. The level
shifted reset voltage of the photodiode 100 is stored in the first
capacitor 152 of the light reader circuit 16 as a reset output
signal. The short exposure output signal is subtracted from the
reset output signal in the light reader circuit 16. The difference
between the short exposure signal and the reset signal is converted
into a binary bit string by ADC 24 and stored into the external
memory 38. The short exposure data corresponds to the first image
pixel data. Then each pixel is again reset to start a long exposure
period.
[0063] In block 406 the light reader circuit 16 stores a long
exposure output signal from the pixel in the second capacitor 154.
In block 408 the pixel is reset and the light reader circuit 16
stores the reset output signal in the first capacitor 152. The long
exposure output signal is subtracted from the reset output signal,
amplified and converted into a binary bit string by ADC 24 as long
exposure data.
[0064] Referring to FIG. 10, in block 410 the short exposure data
is retrieved from memory 38. In block 412 the short exposure data
is combined with the long exposure data by the processor 34. The
data may be combined in a number of different manners. The external
processor 34 may first analyze the image with the long exposure
data. The photodiodes may be saturated if the image is too bright.
This would normally result in a "washed out" image. The processor
34 can process the long exposure data to determine whether the
image is washed out, if so, the processor 34 can then use the short
exposure image data. The processor 34 can also use both the long
and short exposure data to compensate for saturated portions of the
detected image.
[0065] By way of example, the image may be initially set to all
zeros. The processor 34 then analyzes the long exposure data. If
the long exposure data does not exceed a threshold then N least
significant bits (LSB) of the image is replaced with all N bits of
the long exposure data. If the long exposure data does exceed the
threshold then N most significant bits (MSB) of the image are
replaced by all N bits of the short exposure data. The image data
is N+M bits per pixel. This technique increases the dynamic range
by M bits, where M is the exponential in an exposure duration ratio
of long and short exposures that is defined by the equation
l=2.sup.M. The replaced image may undergo a logarithmic mapping to
a final picture of N bits in accordance with the mapping equation
Y=2.sup.N log.sub.2 (X)/(N+M).
[0066] FIG. 11 shows the timing of data generation and retrieval
for the long and short exposure data. The reading of output signals
from the pixel array 12 overlap with the retrieval of signals from
memory 38. FIG. 11 shows timing of data generation and retrieval
wherein a n-th row of pixels starts a short exposure, the (n-k)-th
row ends the short exposure period and starts the long exposure
period, and the (n-k-1)-th row of pixels ends the long exposure
period. Where k is the short exposure duration in multiples of the
line period, and 1 is the long exposure duration in multiples of
the line period.
[0067] The processor 34 begins to retrieve short exposure data for
the pixels in row (n-k) at the same time as the (n-k-1)-th row in
the pixel array is completing the long exposure period. At the
beginning of a line period, the light reader circuit 16 retrieves
the short exposure output signals from the (n-k)-th row of the
pixel array 12 as shown by the enablement of signals SAM1, SAM2,
SEL(n-k) and RST(n-k). The light reader circuit 16 then retrieves
the long exposure data of the (n-k-1)-th row.
[0068] The dual modes of the image sensor 10 can compensate for
varying brightness in the image. When the image brightness is low
the output signals from the pixels are relatively low. This would
normally reduce the SNR of the resultant data provided by the
sensor, assuming the average noise is relatively constant. The
noise compensation scheme shown in FIGS. 4 and 5 improve the SNR of
the output data so that the image sensor provides a quality picture
even when the subject image is relatively dark. Conversely, when
the subject image is too bright the extended dynamic range mode
depicted in FIGS. 10 and 11 compensates for such brightness to
provide a quality picture. Although a process having a short
exposure followed by a long exposure is shown and described, it is
to be understood that the short exposure may follow the long
exposure.
[0069] FIG. 12 shows an embodiment of a row driver 76 and adecoder
78 of the row decoder 20. The decoder 20 may contain an address
decoder 500 and a latch 502. The input of the latch 502 is
connected to input lines CLR 504, D0, D1 506 from the phase decoder
circuit 84 (see FIG. 1) and the output line LE 508 of the address
decoder 500. Although a phase decoder circuit 84 is shown and
described, it is to be understood that any state value generator
may be utilized. The input of the driver 76 is connected to output
lines Q0, Q1 510 of the latch 502 and input lines RST 512 and SEL
514 from the phase sequence decoder 84. The latches 502 for each
row of pixels are all connected to the phase decoder circuit 84 by
the same common control lines 504 and 506. The common control lines
504 and 506 minimize the lines, transistors and space required by
the row decoder while providing a means for loading the state
valves with a time division muliplexing process.
[0070] The address decoder 500 is coupled to a multiplexor 520 by
an address bus 522. The address decoder 500 is also connected to
control lines PRE# 524 and EVA# 526 from the phase sequence decoder
84. The multiplexor 520 may have three input address busses 528,
530 and 532. The address busses 528, 530 and 532 are connected to a
first counter 534, a second counter 536 and a third counter 538,
respectively. Although counters 534, 536 and 538 are shown and
described, it is to be understood that any address generator may be
implemented.
[0071] The output of the multiplexor 520 is switched between the
busses 528, 530 and 532 by a control line PA 540 from the phase
sequence decoder 84. There is a corresponding address decoder 500
and latch 502 for each row of the pixel array 12. The multiplexor
520 provides a time division multiplexing means for selecting a row
of the pixel array with a reduced number of lines and transistors
which minimizes the size of the image sensor.
[0072] FIGS. 13 and 14 show an operation of the row decoder 20 and
transfer of pixel data. As shown in FIG. 14, the integration time
and transfer of data is dependent on the control signal INTG from
the processor 34. Making the integration time and data transfer
dependent on the control signal INTG allows the processor 34 to
control and vary these parameters.
[0073] The INTG control signal contains a plurality of pulses each
with a falling edge and a rising edge. Referring to FIGS. 1, 12, 13
and 14, a falling edge is detected by the wide pulse detector 88,
which generates an output on the LEAD control line 92. The LEAD
control signal starts the first counter 534. The first counter 534
outputs an address that is provided to the multiplexor 520.
[0074] The PA control signal switches some of the multiplexors 520
to provide the address from the first counter 534 to the
corresponding address decoders 500. If the address from the first
counter 534 matches a stored address within the address decoder 500
the decoder 500 will enable the latch 502 through line LE 508. The
latch 502 loads state values Q0 and Q1 into the row driver 76. The
output state values correspond to state values D0 and D1 that were
previously loaded into the latch 502 from the phase sequence
decoder 84. When in low noise mode the state values allow for the
RST and SEL signals to pass through the driver 76 to the selected
row to generate and retrieve reference and reset signals, the first
image.
[0075] The first counter 534 continues to output new address values
which in turn sequentially select rows of the pixel array 12 to
allow for the generation and retrieval of reference and noise
signals for each row. The falling edge of the INTG control signal
also enables the transfer of the first image to the processor 34
from the data interface 32. The process continues until all of the
first image data is transferred to the processor 34, and stored in
memory 38.
[0076] A rising edge of a pulse is detected by the wide pulse
detector 88 which generates an output on the LAG control line 94.
The LAG signal initiates the second counter 536. The second counter
536 provides addresses that are provided to the multiplexors 520 of
each row. The multiplexors 520 mux the addresses to the decoders
500. If the addresses match, the latch 502 is enabled to load state
values into the row drivers 76. When in the low noise mode the
state values allow for the generation and retrieval of light
response and reference signals for the second image. The rising
edge also enables the data interface 32 to transfer the second
image data to the processor 34. As shown in FIG. 14, the transfer
of first and second image data may overlap. The interface 32 can
transfer the overlapping data to the processor 34 in an
interleaving manner.
[0077] FIG. 15 shows the transfer of data when the image sensor 10
is in the extended dynamic range mode. In this mode the INTG
control signal includes a narrow pulse between wide pulses. Short
exposure is initiated by the falling edge of a wide pulse. The
narrow pulse is detected by the narrow pulse detector 90 which
initiates the third counter 538. The third counter 538 provides
addresses which are decoded by matching decoders 500 to enable
corresponding latches 502. The enabled latches 502 load state
values into the row drivers 76 that allow for the generation and
retrieval of long exposure and reference signals of the second
image. The narrow pulse also enables the data interface 32 to
transfer the short exposure and reference signals of the first
image to the processor 34.
[0078] The processor 34 can change the exposure time by varying the
width of the pulses in the control signal. The variation in pulse
width is an integer multiple of the line period so that the change
in pulse width is in synchronization with the signals generated by
the phase sequence decoder 82. When in the extended dynamic range
mode the exposure time can be varied by changing the location of
the narrow pulse.
[0079] As shown in FIG. 16, the image sensor may generate data
within a window 550 of the pixel array 12. The window 550 is an
area typically offset from the first row of the pixel array 12. The
window information may be provided to the processor 34 to
auto-focus the camera. In auto-focus mode the window offset may
vary to capture different parts of the image.
[0080] FIG. 17 shows an INTG control signal with an in embedded
narrow pulse that is used to determine the offset location of the
window 550. When the register 44 sets the image sensor in a window
mode, the narrow pulse detector 90 detects the embedded narrow
pulse and provides a START control signal to the counter/latch 82
on the NP control line 96. The wide pulse detector 88 detects the
rising edge of the next pulse and provides a STOP control signal to
the counter/latch 82 on the LAG control line 94. The counter/latch
82 uses the START and STOP control signal to determine the offset
for the window. An offset value is loaded into the counters 534,
536 and 538 to provide an initial count value. The processor 34 can
control the window offset by varying the location of the embedded
narrow pulse within the control signal.
[0081] It is the intention of the inventor that only claims which
contain the term "means" shall be construed under 35 U.S.C.
.sctn.112, sixth paragraph.
[0082] While certain exemplary embodiments have been described and
shown in the accompanying drawings, it is to be understood that
such embodiments are merely illustrative of and not restrictive on
the broad invention, and that this invention not be limited to the
specific constructions and arrangements shown and described, since
various other modifications may occur to those ordinarily skilled
in the art.
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