U.S. patent application number 09/978859 was filed with the patent office on 2003-04-17 for method of writing to scalable magnetoresistance random access memory element.
Invention is credited to Deherrera, Mark F., Engel, Bradley N., Janesky, Jason Allen, Korkin, Anatoli A., Rizzo, Nicholas D., Savtchenko, Leonid.
Application Number | 20030072174 09/978859 |
Document ID | / |
Family ID | 25526458 |
Filed Date | 2003-04-17 |
United States Patent
Application |
20030072174 |
Kind Code |
A1 |
Savtchenko, Leonid ; et
al. |
April 17, 2003 |
METHOD OF WRITING TO SCALABLE MAGNETORESISTANCE RANDOM ACCESS
MEMORY ELEMENT
Abstract
A method to switch a scalable magnetoresistive memory cell
including the steps of providing a magnetoresistive memory device
sandwiched between a word line and a digit line so that current
waveforms can be applied to the word and digit lines at various
times to cause a magnetic field flux to rotate the effective
magnetic moment vector of the device by approximately 180.degree..
The magnetoresistive memory device includes N ferromagnetic layers
that are anti-ferromagnetically coupled. N can be adjusted to
change the magnetic switching volume of the device.
Inventors: |
Savtchenko, Leonid;
(Chanlder, AZ) ; Korkin, Anatoli A.; (Gilbert,
AZ) ; Engel, Bradley N.; (Chandler, AZ) ;
Rizzo, Nicholas D.; (Gilbert, AZ) ; Deherrera, Mark
F.; (Tempe, AZ) ; Janesky, Jason Allen; (Mesa,
AZ) |
Correspondence
Address: |
MOTOROLA, INC.
CORPORATE LAW DEPARTMENT - #56-238
3102 NORTH 56TH STREET
PHOENIX
AZ
85018
US
|
Family ID: |
25526458 |
Appl. No.: |
09/978859 |
Filed: |
October 16, 2001 |
Current U.S.
Class: |
365/158 ;
365/171; 365/173 |
Current CPC
Class: |
G11C 11/1675 20130101;
G11C 11/161 20130101; G11C 11/16 20130101 |
Class at
Publication: |
365/158 ;
365/171; 365/173 |
International
Class: |
G11C 011/15; G11C
011/14 |
Claims
Having fully described the invention in such clear and concise
terms as to enable those skilled in the art to understand and
practice the same, the invention claimed is:
1. A method of switching a magnetoresistive memory device
comprising the steps of: providing a magnetoresistive memory
element adjacent to a first conductor and a second conductor
wherein the magnetoresistive memory element includes a first
magnetic region and a second magnetic region separated by a
tunneling barrier, at least one of the first and second magnetic
regions include N ferromagnetic material layers that are
anti-ferromagnetically coupled, where N is an integer equal to at
least two, and where each layer has a magnetic moment adjusted to
provide a writing mode, and also each of the first and second
magnetic regions has a magnetic moment vector adjacent to the
tunneling barrier oriented in a preferred direction at a time
t.sub.0; turning on a first current flow through the first
conductor at a time t.sub.1; turning on a second current flow
through the second conductor at a time t.sub.2; turning off the
first current flow through the first conductor at a time t.sub.3;
and turning off the second current flow through the second
conductor at a time t.sub.4 so that one of the magnetic moment
vectors adjacent to the tunneling barrier is oriented in a
direction different from the initial preferred direction at the
time t.sub.0.
2. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein a sub-layer magnetic moment fractional
balance ratio of the one of the first and second magnetic regions
is in the range
0.ltoreq..vertline.M.sub.br.vertline..ltoreq.0.1.
3. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein the times t.sub.0, t.sub.1, t.sub.2,
t.sub.3, and t.sub.4 are such that
t.sub.0<t.sub.1<t.sub.2<t.sub.3<t.sub.4.
4. A method of switching a magnetoresistive memory device as
claimed in claim 1 further including the step of orientating the
first and second conductors at a 90.degree. angle relative to each
other.
5. A method of switching a magnetoresistive memory device as
claimed in claim 1 further including the step of setting the
preferred direction at the time t.sub.0 to be at a non-zero angle
to the first and second conductors.
6. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein the steps of turning on the first and
second current flows in the first and second conductors,
respectively, includes using a combined current magnitude that is
large enough to cause the magnetoresistive memory element to
switch.
7. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein the N layers of ferromagnetic material
are separated by an anti-ferromagnetic coupling material to provide
the anti-ferromagnetic coupling.
8. A method of switching a magnetoresistive memory device as
claimed in claim 7 wherein the step of providing the
magnetoresistive memory element includes using at least one of Ru,
Os, Re, Cr, Rh, and Cu or combinations and compounds thereof in the
anti-ferromagnetic coupling material.
9. A method of switching a magnetoresistive memory device as
claimed in claim 7 wherein the anti-ferromagnetic coupling material
has a thickness in a range of 4 .ANG. to 30 .ANG..
10. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein the step of providing the
magnetoresistive memory element includes using one of Ni, Fe, Mn,
Co, and combinations thereof, in the ferromagnetic material.
11. A method of switching a magnetoresistive memory device as
claimed in claim 10 wherein the step of providing the
magnetoresistive memory element includes providing each of the N
layers of ferromagnetic material with a thickness between 15 .ANG.
and 100 .ANG..
12. A method of switching a magnetoresistive memory device as
claimed in claim 1 including in addition a step of providing the
magnetoresistive memory element with a substantially circular cross
section.
13. A method of switching a magnetoresistive memory device as
claimed in claim 1 including in addition a step of scaling the
volume by increasing N such that the volume remains substantially
constant or increases and a magnetic moment fractional balance
ratio of the one of the first and second magnetic regions remains
constant as the magnetoresistive memory element is scaled laterally
to smaller dimensions.
14. A method of switching a magnetoresistive memory device as
claimed in claim 1 including in addition a step of adjusting the
magnetic moment of the N layers so that a magnetic field needed to
switch the magnetic moment vectors remains substantially constant
as the device is scaled laterally to smaller dimensions.
15. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein the step of providing the writing mode
includes adjusting the moment of each layer of the N layers to
provide a direct write mode at an operating current such that the
current in each of the first and second conductors is pulsed with a
positive polarity to write a state and the current in both of the
first and second conductors is pulsed with a negative polarity to
reverse the state.
16. A method of switching a magnetoresistive memory device as
claimed in claim 15 wherein the time t.sub.3 is approximately equal
to t.sub.4 so that the magnetoresistive memory device operates in
the direct write mode at the operating current.
17. A method of switching a magnetoresistive memory device as
claimed in claim 16 wherein the time t.sub.1 is approximately equal
to t.sub.2 so that the magnetoresistive memory device operates in
the direct write mode at the operating current.
18. A method of switching a magnetoresistive memory device as
claimed in claim 1 wherein the step of providing the writing mode
includes adjusting the moment of each layer of the N layers to
provide a toggle write mode at an operating current such that the
current in each of the first and second conductors is pulsed with a
same polarity to write a state and the current in both of the first
and second conductors is pulsed with the same polarity to reverse
the state.
19. A method of switching a magnetoresistive memory device as
claimed in claim 18 including in addition steps of reading the
magnetoresistive memory device to obtain stored information and
comparing the stored information to program information to be
written prior to the steps of turning on and turning off the first
and second current flows.
20. A method of switching a magnetoresistive memory device as
claimed in claim 18 including in addition steps of providing the
first and second current flows by using unipolar direction
currents.
21. A method of switching a magnetoresistive memory device
comprising the steps of: providing a magnetoresistive memory
element adjacent to a first conductor and a second conductor
wherein the magnetoresistive memory element includes a pinned
magnetic region and a free magnetic region separated by a tunneling
barrier, the free magnetic region includes N anti-ferromagnetically
coupled layers of a ferromagnetic material, where N is an integer
greater than or equal to two, and where the N layers define a
volume and each layer of the N layers has a moment adjusted to
provide a writing mode, and wherein a sub-layer magnetic moment
fractional balance ratio of the one of the first and second
magnetic regions is in a range
0.ltoreq..vertline.M.sub.br.vertline..ltoreq.0.1, and the free
magnetic region has a magnetic moment vector adjacent to the
tunneling barrier oriented in a preferred direction at a time
t.sub.0; and applying a word current pulse to one of the first and
second conductors at a time t.sub.1 and turning off the word
current pulse at a time t.sub.3 while additionally applying a digit
line current pulse to another of the first and second conductors at
a time t.sub.2 and turning off the digit line current pulse at a
time t.sub.4, wherein
t.sub.0<t.sub.1<t.sub.2<t.sub.3<t.sub.4 so that the
magnetic moment vector of the free magnetic region adjacent to the
tunneling barrier at the time t.sub.4 is oriented in a direction
different from the initial preferred direction at the time
t.sub.0.
22. A method of switching a magnetoresistive memory device as
claimed in claim 21 wherein the step of providing the
magnetoresistive memory element includes adjusting the magnetic
moment of each layer of the N layers to provide a direct write mode
at an operating current such that the current in each of the first
and second conductors is pulsed with a same polarity to write a
state and the current in each of the first and second conductors is
pulsed with an opposite polarity to reverse the state.
23. A method of switching a magnetoresistive memory device as
claimed in claim 21 wherein the step of providing the
magnetoresistive memory element includes adjusting the moment of
each layer of the N layers to provide a toggle write mode at an
operating current such that the current in each of the first and
second conductors is pulsed with a same polarity to write a state
and the current in each of the first and second conductors is
pulsed with the same polarity to reverse the state.
24. A method of switching a magnetoresistive memory device as
claimed in claim 23 including in addition steps of reading the
magnetoresistive memory device to obtain stored information and
comparing the stored information to program information to be
written prior to the steps of applying the word current pulse and
the digit line current pulse and turning off the word current pulse
and the digit line current pulse.
25. A method of switching a magnetoresistive memory device as
claimed in claim 23 including in addition the steps of applying the
word current pulse and the digit line current pulse by using
unipolar direction currents.
26. A method of switching a magnetoresistive memory device as
claimed in claim 21 wherein the step of providing the
magnetoresistive element including N layers of ferromagnetic
material includes a step of separating the N layers by an
anti-ferromagnetic coupling material to provide the
anti-ferromagnetic coupling.
27. A method of switching a magnetoresistive memory device as
claimed in claim 26 wherein the anti-ferromagnetic coupling
material has a thickness in a range of approximately 4 .ANG. to 30
.ANG..
28. A method of switching a magnetoresistive memory device as
claimed in claim 26 wherein the step of providing the
magnetoresistive memory element includes using one of Ru, Os, Re,
Cr, Rh, and Cu in the anti-ferromagnetic coupling material.
29. A method of switching a magnetoresistive memory device as
claimed in claim 21 further including a step of orientating the
first and second conductors at approximately a 90.degree. angle
relative to each other.
30. A method of switching a magnetoresistive memory device as
claimed in claim 29 further including a step of setting the
preferred direction at the time to to be at a non-zero angle to the
first and second conductors.
31. A method of switching a magnetoresistive memory device as
claimed in claim 21 wherein the step of applying the word current
pulse and the digit line current pulse to the first and second
conductors, includes using a current magnitude that is large enough
to cause the magnetic moment vector of the free magnetic region
adjacent to the tunneling barrier to switch to a different
direction relative to the orientation at the time t.sub.0.
32. A method of switching a magnetoresistive memory device as
claimed in claim 21 wherein the step of providing the
magnetoresistive memory element includes using one of Ni, Fe, Mn,
Co, and combinations thereof, in the layers of ferromagnetic
material.
33. A method of switching a magnetoresistive memory device as
claimed in claim 32 wherein the step of providing the
magnetoresistive memory element includes forming each layer of the
N layers with a thickness in a range of approximately 15 .ANG. to
100 .ANG..
34. A method of switching a magnetoresistive memory device as
claimed in claim 21 wherein the step of providing the
magnetoresistive memory element includes providing an element with
a substantially circular cross section.
35. A method of switching a magnetoresistive memory device as
claimed in claim 21 including in addition a step of scaling the
volume by increasing N such that the volume remains substantially
constant or increases and a sub-layer magnetic moment fractional
balance ratio remains constant as the magnetoresistive memory
element is scaled laterally to smaller dimensions.
36. A method of switching a magnetoresistive memory device as
claimed in claim 21 including in addition a step of adjusting the
magnetic moment of the N layers so that a magnetic field needed to
switch the magnetic moment vector of the free magnetic region
remains substantially constant as the device is scaled laterally to
smaller dimensions.
37. A method of switching a magnetoresistive device comprising the
steps of: providing a magnetoresistive device adjacent to a first
conductor and a second conductor wherein the magnetoresistive
device includes a free magnetic region and a fixed magnetic region
separated by a tunneling barrier, the free magnetic region
including an N layer synthetic anti-ferromagnetic structure that
defines a volume, where N is an integer greater than or equal to
two, the N layer synthetic anti-ferromagnetic structure includes
anti-ferromagnetically coupled ferromagnetic layers with an
magnetic moment vector adjacent the tunneling barrier oriented in a
preferred direction at a time t.sub.0, and the N layer synthetic
anti-ferromagnetic structure is adjusted to provide a toggle write
mode; reading an initial state of the magnetoresistive memory
device and comparing the initial state with a new state to be
stored in the magnetoresistive memory device; and applying a word
current pulse, only if the initial state and the new state to be
stored are different, to one of the first and second conductors at
a time t.sub.1 and turning off the word current pulse at a time
t.sub.3 while additionally applying a digit line current pulse to
another of the first and second conductors at a time t.sub.2 and
turning off the digit line current pulse at a time t.sub.4.
38. A method of switching a magnetoresistive memory device as
claimed in claim 37 wherein the magnetic moment vector adjacent to
the tunneling barrier is oriented at a different direction at the
time t.sub.4 relative to the preferred direction at the time
t.sub.0, and
t.sub.0<t.sub.1<t.sub.2<t.sub.3<t.sub.4.
39. A method of switching a magnetoresistive memory device as
claimed in claim 37 wherein the time t.sub.3 is approximately equal
to the time t.sub.4 so that the magnetoresistive memory device
operates in a direct write mode at an operating current.
40. A method of switching a magnetoresistive memory device as
claimed in claim 39 wherein the time t.sub.1 is approximately equal
to the time t.sub.2 so that the magnetoresistive memory device
operates in the direct write mode at the operating current.
41. A method of switching a magnetoresistive memory device as
claimed in claim 37 further including a step of orientating the
first and second conductors at approximately a 90.degree. angle
relative to each other.
42. A method of switching a magnetoresistive memory device as
claimed in claim 37 further including a step of setting the
preferred direction at the time t.sub.0 to be at a non-zero angle
to the first and second conductors.
43. A method of switching a magnetoresistive memory device as
claimed in claim 37 wherein the step of applying the word current
pulse and the digit line current pulse to the first and second
conductors includes using a current magnitude that is large enough
to cause the magnetic moment vector of the N layer synthetic
anti-ferromagnetic structure to orient in a direction different
from the initial preferred direction at the time t.sub.0.
44. A method of switching a magnetoresistive memory device as
claimed in claim 37 wherein the step of forming the
magnetoresistive memory element includes using one of Ru, Os, Re,
Cr, Rh, and Cu to provide the anti-ferromagnetic coupling.
45. A method of switching a magnetoresistive memory device as
claimed in claim 37 wherein the step of providing the
magnetoresistive memory element includes providing an element with
a substantially circular cross section.
46. A method of switching a magnetoresistive memory device as
claimed in claim 37 including in addition a step of scaling the
volume by increasing N such that the volume remains substantially
constant or increases and a sub-layer moment fractional balance
ratio remains constant as the magnetoresistive memory element is
scaled laterally to smaller dimensions.
47. A method of switching a magnetoresistive memory device as
claimed in claim 37 including in addition a step of providing the
word current pulse and the digit line current pulse by using
unipolar direction currents.
Description
FIELD OF THE INVENTION
[0001] This invention relates to semiconductor memory devices.
[0002] More particularly, the present invention relates to
semiconductor random access memory devices that utilize a magnetic
field.
BACKGROUND OF THE INVENTION
[0003] Non-volatile memory devices are an extremely important
component in electronic systems. FLASH is the major non-volatile
memory device in use today. Typical non-volatile memory devices use
charges trapped in a floating oxide layer to store information.
Disadvantages of FLASH memory include high voltage requirements and
slow program and erase times. Also, FLASH memory has a poor write
endurance of 10.sup.4-10.sup.6 cycles before memory failure. In
addition, to maintain reasonable data retention, the scaling of the
gate oxide is restricted by the tunneling barrier seen by the
electrons. Hence, FLASH memory is limited in the dimensions to
which it can be scaled.
[0004] To overcome these shortcomings, magnetic memory devices are
being evaluated. One such device is magnetoresistive RAM
(hereinafter referred to as "MRAM") . To be commercially practical,
however, MRAM must have comparable memory density to current memory
technologies, be scalable for future generations, operate at low
voltages, have low power consumption, and have competitive
read/write speeds.
[0005] For an MRAM device, the stability of the nonvolatile memory
state, the repeatability of the read/write cycles, and the memory
element-to-element switching field uniformity are three of the most
important aspects of its design characteristics A memory state in
MRAM is not maintained by power, but rather by the direction of the
magnetic moment vector. Storing data is accomplished by applying
magnetic fields and causing a magnetic material in a MRAM device to
be magnetized into either of two possible memory states. Recalling
data is accomplished by sensing the resistive differences in the
MRAM device between the two states. The magnetic fields for writing
are created by passing currents through strip lines external to the
magnetic structure or through the magnetic structures
themselves.
[0006] As the lateral dimension of an MRAM device decreases, three
problems occur. First, the switching field increases for a given
shape and film thickness, requiring a larger magnetic field to
switch. Second, the total switching volume is reduced so that the
energy barrier for reversal decreases. The energy barrier refers to
the amount of energy needed to switch the magnetic moment vector
from one state to the other. The energy barrier determines the data
retention and error rate of the MRAM device and unintended
reversals can occur due to thermofluctuations (superparamagnetism)
if the barrier is too small. A major problem with having a small
energy barrier is that it becomes extremely difficult to
selectively switch one MRAM device in an array. Selectablility
allows switching without inadvertently switching other MRAM
devices. Finally, because the switching field is produced by shape,
the switching field becomes more sensitive to shape variations as
the MRAM device decreases in size. With photolithography scaling
becoming more difficult at smaller dimensions, MRAM devices will
have difficulty maintaining tight switching distributions.
[0007] It would be highly advantageous, therefore, to remedy the
foregoing and other deficiencies inherent in the prior art.
[0008] Accordingly, it is an object of the present invention to
provide a new and improved method of writing to a magnetoresistive
random access memory device.
[0009] It is an object of the present invention to provide a new
and improved method of writing to a magnetoresistive random access
memory device which is highly selectable.
[0010] It is another object of the present invention to provide a
new and improved method of writing to a magnetoresistive random
access memory device which has an improved error rate.
[0011] It is another object of the present invention to provide a
new and improved method of writing to a magnetoresistive random
access memory device which has a switching field that is less
dependant on shape.
SUMMARY OF THE INVENTION
[0012] To achieve the objects and advantages specified above and
others, a method of writing to a scalable magnetoresistive memory
array is disclosed. The memory array includes a number of scalable
magnetoresistive memory devices. For simplicity, we will look at
how the writing method applies to a single MRAM device, but it will
be understood that the writing method applies to any number of MRAM
devices.
[0013] The MRAM device used to illustrate the writing method
includes a word line and a digit line positioned adjacent to a
magnetoresistive memory element. The magnetoresistive memory
element includes a pinned magnetic region positioned adjacent to
the digit line. A tunneling barrier is positioned on the pinned
magnetic region. A free magnetic region is then positioned on the
tunneling barrier and adjacent to the word line. In the preferred
embodiment, the pinned magnetic region has a resultant magnetic
moment vector that is fixed in a preferred direction. Also, in the
preferred embodiment, the free magnetic region includes synthetic
anti-ferromagnetic (hereinafter referred to as "SAF") layer
material. The synthetic anti-ferromagnetic layer material includes
N anti-ferromagnetically coupled layers of a ferromagnetic
material, where N is a whole number greater than or equal to two.
The N layers define a magnetic switching volume that can be
adjusted by changing N. In the preferred embodiment, the N
ferromagnetic layers are anti-ferromagnetically coupled by
sandwiching an anti-ferromagnetic coupling spacer layer between
each adjacent ferromagnetic layer. Further, each N layer has a
moment adjusted to provide an optimized writing mode.
[0014] In the preferred embodiment, N is equal to two so that the
synthetic anti-ferromagnetic layer material is a tri-layer
structure of a ferromagnetic layer/anti-ferromagnetic coupling
spacer layer/ferromagnetic layer. The two ferromagnetic layers in
the tri-layer structure have magnetic moment vectors M.sub.1 and
M.sub.2, respectively, and the magnetic moment vectors are usually
oriented anti-parallel by the coupling of the anti-ferromagnetic
coupling spacer layer. Anti-ferromagnetic coupling is also
generated by the magnetostatic fields of the layers in the MRAM
structure. Therefore, the spacer layer need not necessarily provide
any additional antiferromagnetic coupling beyond eliminating the
ferromagnetic coupling between the two magnetic layers. More
information as to the MRAM device used to illustrate the writing
method can be found in a copending U.S. Patent Application entitled
"Magnetoresistance Random Access Memory for Improved Scalability"
filed of even date herewith, and incorporated herein by
reference.
[0015] The magnetic moment vectors in the two ferromagnetic layers
in the MRAM device can have different thicknesses or material to
provide a resultant magnetic moment vector given by
.DELTA.M=(M.sub.2-M.sub.1) and a sub-layer moment fractional
balance ratio, M.sub.br=(M.sub.2-M.sub.1)/(-
M.sub.2+M.sub.1)=.DELTA.M/M.sub.total. The resultant magnetic
moment vector of the tri-layer structure is free to rotate with an
applied magnetic field. In zero field the resultant magnetic moment
vector will be stable in a direction, determined by the magnetic
anisotropy, that is either parallel or anti-parallel with respect
to the resultant magnetic moment vector of the pinned reference
layer. It will be understood that the term "resultant magnetic
moment vector" is used only for purposes of this description and
for the case of totally balanced moments, the resultant magnetic
moment vector can be zero in the absence of a magnetic field. As
described below, only the sub-layer magnetic moment vectors
adjacent to the tunnel barrier determine the state of the
memory.
[0016] The current through the MRAM device depends on the tunneling
magnetoresistance, which is governed by the relative orientation of
the magnetic moment vectors of the free and pinned layers directly
adjacent to the tunneling barrier. If the magnetic moment vectors
are parallel, then the MRAM device resistance is low and a voltage
bias will induce a larger current through the device. This state is
defined as a "1". If the magnetic moment vectors are anti-parallel,
then the MRAM device resistance is high and an applied voltage bias
will induce a smaller current through the device. This state is
defined as a "0". It will be understood that these definitions are
arbitrary and could be reversed, but are used in this example for
illustrative purposes. Thus, in magnetoresistive memory, data
storage is accomplished by applying magnetic fields that cause the
magnetic moment vectors in the MRAM device to be orientated either
one of parallel and anti-parallel directions relative to the
magnetic moment vector in the pinned reference layer.
[0017] The method of writing to the scalable MRAM device relies on
the phenomenon of "spin-flop" for a nearly balanced SAF tri-layer
structure. Here, the term "nearly balanced" is defined such that
the magnitude of the sub-layer moment fractional balance ratio is
in the range 0.ltoreq..vertline.M.sub.br.vertline..ltoreq.0.1. The
spin-flop phenomenon lowers the total magnetic energy in an applied
field by rotating the magnetic moment vectors of the ferromagnetic
layers so that they are nominally orthogonal to the applied field
direction but still predominantly anti-parallel to one another. The
rotation, or flop, combined with a small deflection of each
ferromagnetic magnetic moment vector in the direction of the
applied field accounts for the decrease in total magnetic
energy.
[0018] In general, using the flop phenomenon and a timed pulse
sequence, the MRAM device can be written to using two distinct
modes; a direct write mode or a toggle write mode. These modes are
achieved using the same timed pulse sequence as will be described,
but differ in the choice of magnetic sub-layer moment and polarity
and magnitude of the magnetic field applied.
[0019] Each writing method has its advantages. For example, when
using the direct write mode, there is no need to determine the
initial state of the MRAM device because the state is only switched
if the state being written is different from the state that is
stored. Although the direct writing method does not require
knowledge of the state of the MRAM device before the writing
sequence is initiated, it does require changing the polarity of
both the word and digit line depending on which state is
desired.
[0020] When using the toggle writing method, there is a need to
determine the initial state of the MRAM device before writing
because the state will be switched every time the same polarity
pulse sequence is generated from both the word and digit lines.
Thus, the toggle write mode works by reading the stored memory
state and comparing that state with the new state to be written.
After comparison, the MRAM device is only written to if the stored
state and the new state are different.
[0021] The MRAM device is constructed such that the magnetic
anisotropy axis is ideally at a 45.degree. angle to the word and
digit lines. Hence, the magnetic moment vectors M.sub.1 and M.sub.2
are oriented in a preferred direction at a 45.degree. angle to the
directions of the word line and digit line at a time t.sub.0. As an
example of the writing method, to switch the state of the MRAM
device using either a direct or toggle write, the following current
pulse sequence is used. At a time t.sub.1, the word current is
increased and M.sub.1 and M.sub.2 begin to rotate either clockwise
or counterclockwise, depending on the direction of the word
current, to align themselves nominally orthogonal to the field
direction due to the spin-flop effect. At a time t.sub.2, the digit
current is switched on. The digit current flows in a direction such
that M.sub.1 and M.sub.2 are further rotated in the same direction
as the rotation caused by the digit line magnetic field. At this
point in time, both the word line current and the digit line
current are on, with M.sub.1 and M.sub.2 being nominally orthogonal
to the net magnetic field direction, which is 45.degree. with
respect to the current lines.
[0022] It is important to realize that when only one current is on,
the magnetic field will cause M.sub.1 and M.sub.2 to align
nominally in a direction parallel to either the word line or digit
line. However, if both currents are on, then M.sub.1 and M.sub.2
will align nominally orthogonal to a 45.degree. angle to the word
line and digit line.
[0023] At a time t.sub.3, the word line current is switched off, so
that M.sub.1 and M.sub.2 are being rotated only by the digit line
magnetic field. At this point, M.sub.1 and M.sub.2 have generally
been rotated past their hard-axis instability points. At a time
t.sub.4, the digit line current is switched off and M.sub.1 and
M.sub.2 will align along the preferred anisotropy axis. At this
point in time, M.sub.1 and M.sub.2 have been rotated 180.degree.
and the MRAM device has been switched. Thus, by sequentially
switching the word and digit currents on and off, M.sub.1 and
M.sub.2 of the MRAM device can be rotated by 180.degree. so that
the state of the device is switched.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The foregoing and further and more specific objects and
advantages of the instant invention will become readily apparent to
those skilled in the art from the following detailed description of
a preferred embodiment thereof taken in conjunction with the
following drawings:
[0025] FIG. 1 is a simplified sectional view of a magnetoresistive
random access memory device;
[0026] FIG. 2 is a simplified plan view of a magnetoresistive
random access memory device with word and digit lines;
[0027] FIG. 3 is a graph illustrating a simulation of the magnetic
field amplitude combinations that produce the direct or toggle
write mode in the magnetoresistive random access memory device;
[0028] FIG. 4 is a graph illustrating the timing diagram of the
word current and the digit current when both are turned on;
[0029] FIG. 5 is a diagram illustrating the rotation of the
magnetic moment vectors for a magnetoresistive random access memory
device for the toggle write mode when writing a `1` to a `0`;
[0030] FIG. 6 is a diagram illustrating the rotation of the
magnetic moment vectors for a magnetoresistive random access memory
device for the toggle write mode when writing a `0` to a `1`;
[0031] FIG. 7 is a graph illustrating the rotation of the magnetic
moment vectors for a magnetoresistive random access memory device
for the direct write mode when writing a `1` to a `0`;
[0032] FIG. 8 is a graph illustrating the rotation of the magnetic
moment vectors for a magnetoresistive random access memory device
for the direct write mode when writing a `0` to a state that is
already a `0`;
[0033] FIG. 9 is a graph illustrating the timing diagram of the
word current and the digit current when only the digit current is
turned on; and
[0034] FIG. 10 is a graph illustrating the rotation of the magnetic
moment vectors for a magnetoresistive random access memory device
when only the digit current is turned on.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0035] Turn now to FIG. 1, which illustrates a simplified sectional
view of an MRAM array 3 in accordance with the present invention.
In this illustration, only a single magnetoresistive memory device
10 is shown, but it will be understood that MRAM array 3 consists
of a number of MRAM devices 10 and we are showing only one such
device for simplicity in describing the writing method.
[0036] MRAM device 10 is sandwiched therebetween a word line 20 and
a digit line 30. Word line 20 and digit line 30 include conductive
material such that a current can be passed therethrough. In this
illustration, word line 20 is positioned on top of MRAM device 10
and digit line 30 is positioned on the bottom of MRAM device 10 and
is directed at a 90.degree. angle to word line 20 (See FIG. 2).
[0037] MRAM device 10 includes a first magnetic region 15, a
tunneling barrier 16, and a second magnetic region 17, wherein
tunneling barrier 16 is sandwiched therebetween first magnetic
region 15 and second magnetic region 17. In the preferred
embodiment, magnetic region 15 includes a tri-layer structure 18,
which has an anti-ferromagnetic coupling spacer layer 65 sandwiched
therebetween two ferromagnetic layers 45 and 55. Anti-ferromagnetic
coupling spacer layer 65 has a thickness 86 and ferromagnetic
layers 45 and 55 have thicknesses 41 and 51, respectively. Further,
magnetic region 17 has a tri-layer structure 19, which has an
anti-ferromagnetic coupling spacer layer 66 sandwiched therebetween
two ferromagnetic layers 46 and 56. Anti-ferromagnetic coupling
spacer layer 66 has a thickness 87 and ferromagnetic layers 46 and
56 have thicknesses 42 and 52, respectively.
[0038] Generally, anti-ferromagnetic coupling spacer layers 65 and
66 include at least one of the elements Ru, Os, Re, Cr, Rh, Cu, or
combinations thereof. Further, ferromagnetic layers 45, 55, 46, and
56 include at least one of elements Ni, Fe, Mn, Co, or combinations
thereof. Also, it will be understood that magnetic regions 15 and
17 can include synthetic anti-ferromagnetic layer material
structures other than tri-layer structures and the use of tri-layer
structures in this embodiment is for illustrative purposes only.
For example, one such synthetic anti-ferromagnetic layer material
structure could include a five-layer stack of a ferromagnetic
layer/anti-ferromagnetic coupling spacer layer/ferromagnetic
layer/anti-ferromagnetic coupling spacer layer/ferromagnetic layer
structure.
[0039] Ferromagnetic layers 45 and 55 each have a magnetic moment
vector 57 and 53, respectively, that are usually held anti-parallel
by coupling of the anti-ferromagnetic coupling spacer layer 65.
Also, magnetic region 15 has a resultant magnetic moment vector 40
and magnetic region 17 has a resultant magnetic moment vector 50.
Resultant magnetic moment vectors 40 and 50 are oriented along an
anisotropy easy-axis in a direction that is at an angle, preferably
45.degree., from word line 20 and digit line 30 (See FIG. 2).
Further, magnetic region 15 is a free ferromagnetic region, meaning
that resultant magnetic moment vector 40 is free to rotate in the
presence of an applied magnetic field. Magnetic region 17 is a
pinned ferromagnetic region, meaning that resultant magnetic moment
vector 50 is not free to rotate in the presence of a moderate
applied magnetic field and is used as the reference layer.
[0040] While anti-ferromagnetic coupling layers are illustrated
between the two ferromagnetic layers in each tri-layer structure
18, it will be understood that the ferromagnetic layers could be
anti-ferromagnetically coupled through other means, such as
magnetostatic fields or other features. For example, when the
aspect ratio of a cell is reduced to five or less, the
ferromagnetic layers are anti-parallel coupled from magnetostatic
flux closure.
[0041] In the preferred embodiment, MRAM device 10 has tri-layer
structures 18 that have a length/width ratio in a range of 1 to 5
for a non-circular plan. However, we illustrate a plan that is
circular (See FIG. 2). MRAM device 10 is circular in shape in the
preferred embodiment to minimize the contribution to the switching
field from shape anisotropy and also because it is easier to use
photolithographic processing to scale the device to smaller
dimensions laterally. However, it will be understood that MRAM
device 10 can have other shapes, such as square, elliptical,
rectangular, or diamond, but is illustrated as being circular for
simplicity and improved performance.
[0042] Further, during fabrication of MRAH array 3, each succeeding
layer (i.e. 30, 55, 65, etc.) is deposited or otherwise formed in
sequence and each MRAM device 10 may be defined by selective
deposition, photolithography processing, etching, etc. in any of
the techniques known in the semiconductor industry. During
deposition of at least the ferromagnetic layers 45 and 55, a
magnetic field is provided to set a preferred easy magnetic axis
for this pair (induced anisotropy). The provided magnetic field
creates a preferred anisotropy axis for magnetic moment vectors 53
and 57. The preferred axis is chosen to be at a 45.degree. angle
between word line 20 and digit line 30, as will be discussed
presently.
[0043] Turn now to FIG. 2, which illustrates a simplified plan view
of a MRAM array 3 in accordance with the present invention. To
simplify the description of MRAM device 10, all directions will be
referenced to an x- and y-coordinate system 100 as shown and to a
clockwise rotation direction 94 and a counter-clockwise rotation
direction 96. To further simplify the description, it is again
assumed that N is equal to two so that MRAM device 10 includes one
tri-layer structure in region 15 with magnetic moment vectors 53
and 57, as well as resultant magnetic moment vector 40. Also, only
the magnetic moment vectors of region 15 are illustrated since they
will be switched.
[0044] To illustrate how the writing methods work, it is assumed
that a preferred anisotropy axis for magnetic moment vectors 53 and
57 is directed at a 45.degree. angle relative to the negative x-
and negative y-directions and at a 45.degree. angle relative to the
positive x- and positive y-directions. As an example, FIG. 2 shows
that magnetic moment vector 53 is directed at a 45.degree. angle
relative to the negative x- and negative y-directions. Since
magnetic moment vector 57 is generally oriented anti-parallel to
magnetic moment vector 53, it is directed at a 45.degree. angle
relative to the positive x- and positive y-directions. This initial
orientation will be used to show examples of the writing methods,
as will be discussed presently.
[0045] In the preferred embodiment, a word current 60 is defined as
being positive if flowing in a positive x-direction and a digit
current 70 is defined as being positive if flowing in a positive
y-direction. The purpose of word line 20 and digit line 30 is to
create a magnetic field within MRAM device 10. A positive word
current 60 will induce a circumferential word magnetic field,
H.sub.w 80, and a positive digit current 70 will induce a
circumferential digit magnetic field, H.sub.D 90. Since word line
20 is above MRAM device 10, in the plane of the element, H.sub.w 80
will be applied to MRAM device 10 in the positive y-direction for a
positive word current 60. Similarly, since digit line 30 is below
MRAM device 10, in the plane of the element, H.sub.D 90 will be
applied to MRAM device 10 in the positive x-direction for a
positive digit current 70. It will be understood that the
definitions for positive and negative current flow are arbitrary
and are defined here for illustrative purposes. The effect of
reversing the current flow is to change the direction of the
magnetic field induced within MRAM device 10. The behavior of a
current induced magnetic field is well known to those skilled in
the art and will not be elaborated upon further here.
[0046] Turn now to FIG. 3, which illustrates the simulated
switching behavior of a SAF tri-layer structure. The simulation
consists of two single domain magnetic layers that have close to
the same moment (a nearly balanced SAF) with an intrinsic
anisotropy, are coupled anti-ferromagnetically, and whose
magnetization dynamics are described by the Landau-Lifshitz
equation. The x-axis is the word line magnetic field amplitude in
Oersteds, and the y-axis is the digit line magnetic field amplitude
in Oersteds. The magnetic fields are applied in a pulse sequence
100 as shown in FIG. 4 wherein pulse sequence 100 includes word
current 60 and digit current 70 as functions of time.
[0047] There are three regions of operation illustrated in FIG. 3.
In a region 92 there is no switching. For MRAM operation in a
region 95, the direct writing method is in effect. When using the
direct writing method, there is no need to determine the initial
state of the MRAM device because the state is only switched if the
state being written is different from the state that is stored. The
selection of the written state is determined by the direction of
current in both word line 20 and digit line 30. For example, if a
`1` is desired to be written, then the direction of current in both
lines will be positive. If a `1` is already stored in the element
and a `1` is being written, then the final state of the MRAM device
will continue to be a `1`. Further, if a `0` is stored and a `1` is
being written with positive currents, then the final state of the
MRAM device will be a `1`. Similar results are obtained when
writing a `0` by using negative currents in both the word and digit
lines. Hence, either state can be programmed to the desired `1` or
`0` with the appropriate polarity of current pulses, regardless of
its initial state. Throughout this disclosure, operation in region
95 will be defined as "direct write mode".
[0048] For MRAM operation in a region 97, the toggle writing method
is in effect. When using the toggle writing method, there is a need
to determine the initial state of the MRAM device before writing
because the state is switched every time the MRAM device is written
to, regardless of the direction of the currents as long as the same
polarity current pulses are chosen for both word line 20 and digit
line 30. For example, if a `1` is initially stored then the state
of the device will be switched to a `0` after one positive current
pulse sequence is flowed through the word and digit lines.
Repeating the positive current pulse sequence on the stored `0`
state returns it to a `1`. Thus, to be able to write the memory
element into the desired state, the initial state of MRAM device 10
must first be read and compared to the state to be written. The
reading and comparing may require additional logic circuitry,
including a buffer for storing information and a comparator for
comparing memory states. MRAM device 10 is then written to only if
the stored state and the state to be written are different. One of
the advantages of this method is that the power consumed is lowered
because only the differing bits are switched. An additional
advantage of using the toggle writing method is that only uni-polar
voltages are required and, consequently, smaller N-channel
transistors can be used to drive the MRAM device. Throughout this
disclosure, operation in region 97 will be defined as "toggle write
mode".
[0049] Both writing methods involve supplying currents in word line
20 and digit line 30 such that magnetic moment vectors 53 and 57
can be oriented in one of two preferred directions as discussed
previously. To fully elucidate the two switching modes, specific
examples describing the time evolution of magnetic moment vectors
53, 57, and 40 are now given.
[0050] Turn now to FIG. 5 which illustrates the toggle write mode
for writing a `1` to a `0` using pulse sequence 100. In this
illustration at time t.sub.0, magnetic moment vectors 53 and 57 are
oriented in the preferred directions as shown in FIG. 2. This
orientation will be defined as a `1`.
[0051] At a time t.sub.1, a positive word current 60 is turned on,
which induces H.sub.w 80 to be directed in the positive
y-direction. The effect of positive H.sub.w 80 is to cause the
nearly balanced anti-aligned MRAM tri-layer to "FLOP" and become
oriented approximately 90.degree. to the applied field direction.
The finite anti-ferromagnetic exchange interaction between
ferromagnetic layers 45 and 55 will allow magnetic moment vectors
53 and 57 to now deflect at a small angle toward the magnetic field
direction and resultant magnetic moment vector 40 will subtend the
angle between magnetic moment vectors 53 and 57 and will align with
H.sub.w 80. Hence, magnetic moment vector 53 is rotated in
clockwise direction 94. Since resultant magnetic moment vector 40
is the vector addition of magnetic moment vectors 53 and 57,
magnetic moment vector 57 is also rotated in clockwise direction
94.
[0052] At a time t.sub.2, positive digit current 70 is turned on,
which induces positive H.sub.D 90. Consequently, resultant magnetic
moment vector 40 is being simultaneously directed in the positive
y-direction by H.sub.w 80 and the positive x-direction by H.sub.D
90, which has the effect of causing effective magnetic moment
vector 40 to further rotate in clockwise direction 94 until it is
generally oriented at a 45.degree. angle between the positive x-
and positive y-directions. Consequently, magnetic moment vectors 53
and 57 will also further rotate in clockwise direction 94.
[0053] At a time t.sub.3, word current 60 is turned off so that now
only H.sub.D 90 is directing resultant magnetic moment vector 40,
which will now be oriented in the positive x-direction. Both
magnetic moment vectors 53 and 57 will now generally be directed at
angles passed their anisotropy hard-axis instability points.
[0054] At a time t.sub.4, digit current 70 is turned off so a
magnetic field force is not acting upon resultant magnetic moment
vector 40. Consequently, magnetic moment vectors 53 and 57 will
become oriented in their nearest preferred directions to minimize
the anisotropy energy. In this case, the preferred direction for
magnetic moment vector 53 is at a 45.degree. angle relative to the
positive y- and positive x-directions. This preferred direction is
also 180.degree. from the initial direction of magnetic moment
vector 53 at time t.sub.0 and is defined as `0`. Hence, MRAM device
10 has been switched to a `0`. It will be understood that MRAM
device 10 could also be switched by rotating magnetic moment
vectors 53, 57, and 40 in counter clockwise direction 96 by using
negative currents in both word line 20 and digit line 30, but is
shown otherwise for illustrative purposes.
[0055] Turn now to FIG. 6 which illustrates the toggle write mode
for writing a `0` to a `1` using pulse sequence 100. Illustrated
are the magnetic moment vectors 53 and 57, as well as resultant
magnetic moment vector 40, at each of the times t.sub.0, t.sub.1,
t.sub.2, t.sub.3, and t.sub.4 as described previously showing the
ability to switch the state of MRAM device 10 from `0` to `1` with
the same current and magnetic field directions. Hence, the state of
MRAM device 10 is written to with toggle write mode, which
corresponds to region 97 in FIG. 3.
[0056] For the direct write mode, it is assumed that magnetic
moment vector 53 is larger in magnitude than magnetic moment vector
57, so that magnetic moment vector 40 points in the same direction
as magnetic moment vector 53, but has a smaller magnitude in zero
field. This unbalanced moment allows the dipole energy, which tends
to align the total moment with the applied field, to break the
symmetry of the nearly balanced SAF. Hence, switching can occur
only in one direction for a given polarity of current.
[0057] Turn now to FIG. 7 which illustrates an example of writing a
`1` to a `0` using the direct write mode using pulse sequence 100.
Here again, the memory state is initially a `1` with magnetic
moment vector 53 directed 45.degree. with respect to the negative
x- and negative y-directions and magnetic moment vector 57 directed
45.degree. with respect to the positive x- and positive
y-directions. Following the pulse sequence as described above with
positive word current 60 and positive digit current 70, the writing
occurs in a similar manner as the toggle write mode as described
previously. Note that the moments again `FLOP` at a time t.sub.1,
but the resulting angle is canted from 90.degree. due to the
unbalanced moment and anisotropy. After time t.sub.4, MRAM device
10 has been switched to the `0` state with resultant magnetic
moment 40 oriented at a 45.degree. angle in the positive x- and
positive y-directions as desired. Similar results are obtained when
writing a `0` to a `1` only now with negative word current 60 and
negative digit current 70.
[0058] Turn now to FIG. 8 which illustrates an example of writing
using the direct write mode when the new state is the same as the
state already stored. In this example, a `0` is already stored in
MRAM device 10 and current pulse sequence 100 is now repeated to
store a `0`. Magnetic moment vectors 53 and 57 attempt to "FLOP" at
a time t.sub.1, but because the unbalanced magnetic moment must
work against the applied magnetic field, the rotation is
diminished. Hence, there is an additional energy barrier to rotate
out of the reverse state. At time t.sub.2, the dominant moment 53
is nearly aligned with the positive x-axis and less than 45.degree.
from its initial anisotropy direction. At a time t.sub.3, the
magnetic field is directed along the positive x-axis. Rather than
rotating further clockwise, the system now lowers its energy by
changing the SAF moment symmetry with respect to the applied field.
The passive moment 57 crosses the x-axis and the system stabilizes
with the dominant moment 53 returned to near its original
direction. Therefore, at a time t.sub.4 when the magnetic field is
removed, and the state stored in MRAM device 10 will remain a `0`.
This sequence illustrates the mechanism of the direct write mode
shown as region 95 in FIG. 3. Hence, in this convention, to write a
`0` requires positive current in both word line 60 and digit line
70 and, conversely, to write a `1` negative current is required in
both word line 60 and digit line 70.
[0059] If larger fields are applied, eventually the energy decrease
associated with a flop and scissor exceeds the additional energy
barrier created by the dipole energy of the unbalanced moment which
is preventing a toggle event. At this point, a toggle event will
occur and the switching is described by region 97.
[0060] Region 95 in which the direct write mode applies can be
expanded, i.e. toggle mode region 97 can be moved to higher
magnetic fields, if the times t.sub.3 and t.sub.4 are equal or made
as close to equal as possible. In this case, the magnetic field
direction starts at 45.degree. relative to the bit anisotropy axis
when word current 60 turns on and then moves to parallel with the
bit anisotropy axis when digit current 70 turns on. This example is
similar to the typical magnetic field application sequence.
However, now word current 60 and digit current 70 turn off
substantially simultaneously, so that the magnetic field direction
does not rotate any further. Therefore, the applied field must be
large enough so that the resultant magnetic moment vector 40 has
already moved past its hard-axis instability point with both word
current 60 and digit current 70 turned on. A toggle writing mode
event is now less likely to occur, since the magnetic field
direction is now rotated only 45.degree., instead of 90.degree. as
before. An advantage of having substantially coincident fall times,
t.sub.3 and t.sub.4, is that now there are no additional
restrictions on the order of the field rise times t.sub.1 and
t.sub.2. Thus, the magnetic fields can be turned on in any order or
can also be substantially coincident.
[0061] The writing methods described previously are highly
selective because only the MRAM device that has both word current
60 and digit current 70 turned on between time t.sub.2 and time
t.sub.3 will switch states. This feature is illustrated in FIGS. 9
and 10. FIG. 9 illustrates pulse sequence 100 when word current 60
is not turned on and digit current 70 is turned on. FIG. 10
illustrates the corresponding behavior of the state of MRAM device
10. At a time t.sub.0, magnetic moment vectors 53 and 57, as well
as resultant magnetic moment vector 40, are oriented as described
in FIG. 2. In pulse sequence 100, digit current 70 is turned on at
a time t.sub.1. During this time, H.sub.D 90 will cause resultant
magnetic moment vector 40 to be directed in the positive
x-direction.
[0062] Since word current 60 is never switched on, resultant
magnetic moment vectors 53 and 57 are never rotated through their
anisotropy hard-axis instability points. As a result, magnetic
moment vectors 53 and 57 will reorient themselves in the nearest
preferred direction when digit current 70 is turned off at a time
t.sub.3, which in this case is the initial direction at time
t.sub.0. Hence, the state of MRAM device 10 is not switched. It
will be understood that the same result will occur if word current
60 is turned on at similar times described above and digit current
70 is not turned on. This feature ensures that only one MRAM device
in an array will be switched, while the other devices will remain
in their initial states. As a result, unintentional switching is
avoided and the bit error rate is minimized.
[0063] Various changes and modifications to the embodiments herein
chosen for purposes of illustration will readily occur to those
skilled in the art. To the extent that such modifications and
variations do not depart from the spirit of the invention, they are
intended to be included within the scope thereof which is assessed
only by a fair interpretation of the following claims.
* * * * *