U.S. patent application number 10/302500 was filed with the patent office on 2003-04-10 for plasma cvd apparatus.
This patent application is currently assigned to Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Abe, Hisashi, Ishiwata, Mika, Sakama, Mitsunori, Takayama, Toru, Uehara, Hiroshi, Yamazaki, Shunpei.
Application Number | 20030066485 10/302500 |
Document ID | / |
Family ID | 15167082 |
Filed Date | 2003-04-10 |
United States Patent
Application |
20030066485 |
Kind Code |
A1 |
Yamazaki, Shunpei ; et
al. |
April 10, 2003 |
Plasma CVD apparatus
Abstract
In a plasma CVD apparatus, unnecessary discharge such as arc
discharge is prevented, the amount of particles due to peeling of
films attached to a reaction chamber is reduced, and the percentage
of a time contributing to production in hours of operation of the
apparatus is increased while enlargement of the apparatus and easy
workability are maintained. The plasma CVD apparatus is configured
such that in a conductive reaction chamber 104 with a power source
113, a vacuum exhausting means 118, and a reaction gas introduction
pipe 114, plasma 115 is generated in a space surrounded by an
electrode 111, a substrate holder 112, and an insulator 120.
Inventors: |
Yamazaki, Shunpei;
(Atsugi-shi, JP) ; Takayama, Toru; (Atsugi-shi,
JP) ; Sakama, Mitsunori; (Atsugi-shi, JP) ;
Abe, Hisashi; (Atsugi-shi, JP) ; Uehara, Hiroshi;
(Atsugi-shi, JP) ; Ishiwata, Mika; (Atsugi-shi,
JP) |
Correspondence
Address: |
ERIC ROBINSON
PMB 955
21010 SOUTHBANK ST.
POTOMAC FALLS
VA
20165
US
|
Assignee: |
Semiconductor Energy Laboratory
Co., Ltd.
Atsugi-shi
JP
|
Family ID: |
15167082 |
Appl. No.: |
10/302500 |
Filed: |
November 25, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10302500 |
Nov 25, 2002 |
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09935660 |
Aug 24, 2001 |
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6499427 |
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09935660 |
Aug 24, 2001 |
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09069942 |
Apr 30, 1998 |
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6283060 |
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Current U.S.
Class: |
118/723E ;
156/345.47 |
Current CPC
Class: |
H01J 37/32477 20130101;
Y10S 438/905 20130101; C23C 16/5096 20130101; C23C 16/4401
20130101 |
Class at
Publication: |
118/723.00E ;
156/345.47 |
International
Class: |
C23C 016/00 |
Foreign Application Data
Date |
Code |
Application Number |
May 9, 1997 |
JP |
09-136092 |
Claims
What is claimed is:
1. A plasma CVD apparatus comprising: a reaction chamber
constituted by a conductor and maintained in a decompressed state;
an electrode for supplying electric energy into the reaction
chamber; a substrate holder for holding a substrate opposite to the
electrode; a gas system for supplying a gas into the reaction
chamber; and an exhaust system for exhausting the reaction chamber,
wherein plasma is generated in a space surrounded by the electrode,
the substrate holder, and an insulator.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a plasma CVD apparatus for
forming a thin film in the semiconductor, liquid crystal, optical
disc or like technological fields, and particularly relates to a
plasma CVD apparatus using a reaction chamber constituted by a
conductor such as metal.
[0003] 2. Description of the Related Art
[0004] As methods of forming a thin film on a substrate, there are
known a sputtering method using a sputtering phenomenon in a
decompressed state, a vacuum evaporation method using an
evaporation phenomenon, a CVD (Chemical Vapor Deposition) method
such as a plasma CVD method using low temperature gas decomposition
by plasma, a thermal CVD method using heat decomposition of a gas,
and a photo CVD method for decomposing a gas by energy of shortwave
light or ultraviolet rays, and the like. In addition, research and
development has been undertaken with respect to combined techniques
and applied techniques of the aforementioned methods, and such
techniques have been implemented in actual manufacturing
methods.
[0005] Among the foregoing thin film forming techniques, the plasma
CVD method is characterized in that direct current or high
frequency voltage is applied to a reaction gas in a decompressed
state, and the reaction gas is decomposed by glow discharge to
deposit a film on a substrate. In the thin film formation by this
method, gas can be decomposed at a relatively low temperature
(500.degree. C. or less) by plasma energy such as high electron
temperature of several eV in the plasma, and films of various
compositions with high purity can be formed by using vacuum and by
changing the kind of gas. Thus, the plasma CVD method is used in
various fields such as the semiconductor field, the liquid crystal
field, the optical disk field, and the magnetic disk field.
magnetic disk field.
[0006] It is well known that to use a batch type plasma CVD
apparatus in which a plurality of substrates are processed at the
same time to form a thin film on a substrate.
[0007] However, in the case of the batch process, even if
substrates are processed at the same time, characteristics of thin
films slightly fluctuate in the respective substrates. Thus,
repeated or consistent precision is poor and unevenness among
substrates is large, so that the batch process has not been able to
fulfill the desire for high precision in a thin film.
[0008] In addition, since a plurality of (about four to eight
pieces) substrates are processed at the same time, it has been
necessary to provide a substrate holder on which the substrates are
mounted and are moved together with the substrates. This substrate
holder is removed to the outside of the plasma CVD apparatus when
film growth on the substrates is completed, the next batch of
substrates is mounted on the substrate holder, and then the
substrate holder is again processed in the apparatus.
[0009] Thus, since the process of heating in vacuum and placing in
atmospheric pressure at room temperature is repeated, a so-called
peeling phenomenon occurs in which a film attached to the substrate
holder is peeled off.
[0010] Because of the foregoing reason, the batch process has not
been used recently in not only the plasma CVD apparatus but also in
almost entire fields including, for example, thin film etching.
Instead, single wafer processing type apparatus has been used.
[0011] The single wafer processing type is a system characterized
in that a substrate holder moving together with substrates is not
used, but, rather, substrates are processed one by one, and only
the substrate is moved. A conventional plasma CVD apparatus using
this system will be described with reference to FIGS. 2 and 3.
[0012] FIG. 2 is a top view showing a single wafer processing type
plasma CVD apparatus, and a chamber 201 is a load chamber in and
out of which a substrate is carried. Chambers 202 to 206 become
reaction chambers.
[0013] A plurality of substrates to be processed are set in the
load chamber 201 by a cassette or the like. After the substrates
are set in the load chamber 201, the chamber is decompressed. When
the chamber is decompressed to a sufficient pressure, a gate valve
210 between the load chamber 201 and a common chamber 207 is
opened. A substrate carrying means 208 disposed in the common
chamber 207 carries one substrate among a plurality of substrates
set in the cassette in the load chamber 201 from the load chamber
201 into the common chamber 207. FIG. 2 shows the state where the
substrate has been carried, and a substrate 209 is carried into the
reaction chamber in which a thin film is formed. The substrate 209
is carried by the substrate carrying means 208 into the reaction
chamber.
[0014] The common chamber 207 is connected to the respective
reaction chambers 202 to 206 and the load chamber 201 through the
respective gate valves 210. When the substrate 209 is carried in
and out of the respective chambers, the gate valve of that chamber
is opened. The load chamber 201, the respective reaction chambers
202 to 206, and the common chamber 207 are evacuated by vacuum
exhausting means, respectively.
[0015] As to thin film formation, there are various types such as a
lamination type (P-layer, I-layer, and N-layer, etc.)for use, for
example, in an amorphous solar cell, and a single layer type for
use, for example, in a protective film for a semiconductor. Thus,
the processes in the respective chambers are different according to
the kinds of films to be formed, the type of lamination, and the
like.
[0016] FIG. 3 is a sectional view taken along line A-A of FIG. 2
and showing the common chamber 207 and the reaction chamber
204.
[0017] An electrode 211 and a substrate holder 212 are disposed in
the reaction chamber 204. The electrode 211 is connected to a power
source 213, and the substrate holder 212 and the reaction chamber
204 are grounded. The substrate holder 212 is equipped with a
heater (not shown) for heating a substrate.
[0018] This substrate holder 212 is disposed inside the reaction
chamber 204 contrary to the foregoing batch type, and is not moved
together with the substrate 209.
[0019] The substrate 209 is placed on the substrate holder 212 from
the common chamber 207, and a reaction gas is introduced through an
introduction pipe 214. Then voltage is applied to the electrode 211
to generate plasma in a space 215 so that a thin film is formed on
the substrate.
[0020] The substrate 210 on which a thin film has been formed, is
again carried by the carrying means 208 in the common chamber 207
from the reaction chamber 204 into the common chamber 207, and is
subjected to a next process. Another substrate is carried in the
reaction chamber 204 and thin film formation is performed in the
same manner. In these sequential processes, only the substrate is
moved.
[0021] Incidentally, reference numerals 217 and 218 denote vacuum
exhausting means, which maintain the inside of the common chamber
and the reaction chamber in a decompressed state. The exhausting
means is generally independently provided in the respective
chambers.
[0022] The reaction cambers 203 to 206 also have the same structure
as the reaction chamber 202, and the reaction chambers are
selectively used according to the kind and thickness of a film to
be formed. For example, a silicon film is formed in the reaction
chamber 202, a silicon oxide film is formed in the reaction chamber
203, and a silicon nitride film is formed in the reaction chamber
204.
[0023] Alternatively, the same process of laminating a silicon
nitride film, a silicon film, and a silicon nitride film is
performed in the respective reaction chambers, so that the total
throughput, that is, the so-called producibility is improved.
[0024] Of course, if the kind of film to be formed in each chamber
is determined so as to suppress impurities to the highest degree,
each film can be sequentially formed without mixture of impurities,
so that it is also possible to increase the efficiency of
production.
[0025] In the structure of the above-mentioned plasma CVD
apparatus, the respective chambers are mainly composed of a
conductor such as metal, for example, aluminum or stainless steel.
With respect to materials for a chamber of the plasma CVD
apparatus, although it is known that quartz or alumina as an
insulator may be used other than metal, such a material is not used
for a single wafer processing type apparatus. The reason is as
follows.
[0026] In the case of the single wafer processing type plasma CVD
apparatus, since substrates are processed one at a time, it is
necessary to provide a plurality of reaction chambers to increase
the producibility. If a plurality of reaction chambers are
provided, a plasma CVD apparatus inevitably becomes large. Thus, it
is necessary to use a material having strength. In the case of a
material such as quartz or aluminum, although it has strength, it
is apt to be damaged. A material of a vacuum chamber is so subtle
that even if a flaw such as a hairline crack is present, vacuum can
not be maintained. In addition, since the apparatus becomes large
and complicated, it is necessary to use a material which is easily
workable and has high working precision. Moreover, it is preferable
that the material be as inexpensive as possible.
[0027] To satisfy the above described conditions reaction chamber,
presently are often made of a metal material such as aluminum,
aluminum alloy, or stainless steel.
[0028] In the case where a thin film is formed by the foregoing
single wafer processing type plasma CVD apparatus, a reaction gas
to be decomposed extends not only to a substrate but also to the
entirety of a reaction chamber. In a thermal CVD and the like,
since the entirety of a reaction chamber is heated, films are
formed over the entirety of the reaction chamber, as well as on the
substrate. In the case of the plasma CVD method, although it is
ideal that a film is formed only on the substrate where plasma is
generated, films are also formed at places other than the
substrate. That is, since the plasma 215 extends also in the space
other than the vicinity of the substrate 209, films are formed also
on the exposed portions such as the surface of the electrode 211
and the inner wall of the reaction chamber.
[0029] The aforementioned occurs because, since the reaction
chamber is made of a metal material, that is, a conductor, plasma
is not generated only in a space between the electrode and the
substrate holder, but extends beyond this space. Contrary to the
substrate holder of a batch type plasma CVD apparatus, the films
formed on portions other than the substrate are not exposed to the
atmosphere, or are not subjected to the repetition of a cycle of
room temperature and high temperature, so that the films do not
immediately peel off.
[0030] However, when film formation is continued, the films start
to peel off as well. Then these films become particles, flakes or
the like and fall onto the substrate or the bottom of the reaction
chamber.
[0031] Thus, it is necessary to periodically remove the films
formed and deposited on places other than the substrate after
several sequences of film formation are carried out and before the
films start to peel off. The removal of the films is carried out by
introducing an etching gas into the reaction chamber to form plasma
so that the films are etched.
[0032] At the film formation, there is also a terrible case such
that unnecessary discharge such as arc discharge occurs also in a
space near the electrode 211 and between the electrode 211 and the
inner wall of the reaction chamber, for example, in the space
designated by 216 in FIG. 3, and the thickness of a film formed on
the inner wall becomes thick, so that the film becomes easy to peel
off.
[0033] The inner wall of the reaction chamber is made relatively
smooth in its surface. The objects thereof are to suppress the
degassing of the wall so that impurities are decreased, as well as
to prevent arc discharge, and the like. Actually, the wall surface
is made to be close to a mirror surface by buff polishing with #400
or more, electrolytic polishing, combined electrolytic polishing,
or the like. A film attached to the smooth surface has poor
adhesion and easily peels off. The peeled film becomes particles or
flakes, falls onto the reaction chamber, and is deposited. These
deposits, which once peeled off and became particles or flakes, are
hard to remove by plasma etching than a film-like substance
attached to the inner wall at the film formation.
[0034] Actually, the deposits can not be completely removed. The
reason why they can not be completely removed, is not clarified
theoretically. However, as an empirical law, although a film-like
substance may be etched, a solid substance such as particles or
flakes can not be completely etched.
[0035] Thus, it is necessary to carry out cleaning of the reaction
chamber considerably before a film that is attached to a place
other than a substrate peels off. Thus, with respect to the ratio
of film forming hours contributing to production to etching hours
not contributing to production in hours of operation of an
apparatus, the ratio of the hours contributing to production is
decreased.
[0036] If unevenness is provided on the surface of the reaction
chamber, it is possible to prevent the film from easily peeling
off. However, with a surface area that becomes large, it takes a
more time to achieve evacuation, and the amount of gas released
from the uneven surface having the increased surface area is
increased. Thus, the method of providing the unevenness is contrary
to the original object to form a thin film having high purity by
using a vacuum apparatus.
SUMMARY OF THE INVENTION
[0037] The present invention has been made to overcome the
foregoing problems. That is, an object of the present invention is
to provide a plasma CVD apparatus in which unnecessary discharge
such as arc discharge is prevented, the amount of particles due to
peeling of films attached to a reaction chamber is decreased, and
the percentage of a time contributing to production in hours of
operation of the apparatus is increased, while the enlargement of
the apparatus and easy workability can be maintained.
[0038] According to an aspect of the present invention, a plasma
CVD apparatus comprises a conductive reaction chamber maintained in
a decompressed state; an electrode for supplying electric energy
into the reaction chamber; a substrate holder capable of holding a
substrate opposite to the electrode; a gas system for supplying a
gas into the reaction chamber; and an exhaust system for exhausting
the reaction chamber, and is characterized in that plasma is
generated in a space surrounded by the electrode, the substrate
holder, and an insulator.
[0039] In the above structure, the plasma CVD apparatus is
characterized in that the insulator is alumina.
[0040] According to another aspect of the present invention, a
plasma CVD apparatus comprises a load chamber, a common chamber,
and a reaction chamber respectively made of a conductor and
maintained in a decompressed state; carrying means disposed in the
common chamber and for carrying a substrate in and out of the
reaction chamber; an electrode for supplying electric energy into
the reaction chamber; a substrate holder for holding the substrate
opposite to the electrode; a gas system for supplying a gas into
the reaction chamber; and an exhaust system for exhausting the
reaction chamber, wherein plasma is generated in a space surrounded
by the electrode, the substrate holder, and an insulator, and the
apparatus is characterized in that the insulator becomes a stopper
when the substrate holder is worked and is stopped.
[0041] In the above structure, the plasma CVD apparatus is
characterized in that the insulator is made of alumina.
BRIEF DESCRIPTION OF THE DRAWINGS
[0042] In the accompanying drawings:
[0043] FIG. 1 is a sectional view showing a common chamber and a
reaction chamber of a plasma CVD apparatus of the present
invention;
[0044] FIG. 2 is a top view showing a single wafer processing type
plasma CVD apparatus;
[0045] FIG. 3 is a sectional view showing a common chamber and a
reaction chamber of a conventional plasma CVD apparatus; and
[0046] FIG. 4 is a sectional view showing a reaction chamber of a
plasma CVD apparatus of an embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0047] FIG. 1 shows a plasma CVD apparatus of the present
invention. FIG. 1 is a sectional view showing a common chamber 107
and one reaction chamber 104. The CVD apparatus is constituted by a
load chamber, a common chamber, and a plurality of reaction
chambers as in, for example, the single wafer processing type shown
in FIG. 2.
[0048] The common chamber 107 and the reaction chamber 104 are made
of a metal material because of the reason described before. They
are connected to each other through a gate valve 110.
[0049] In the reaction chamber 104, an electrode 111 and a
substrate holder 112 are disposed. The electrode 111 is connected
to a power source 113, and the substrate holder 112 and the
reaction chamber 104 are grounded. The substrate holder is equipped
with a heater (not shown) for heating a substrate.
[0050] Reference numerals 117 and 118 denote vacuum exhausting
means, and maintain the inside of the common chamber and the
reaction chamber in a decompressed state, respectively. Reference
numeral 114 denotes a pipe for introducing a reaction gas into the
reaction chamber 104. In the case of FIG. 1, the electrode 111 is
of a mesh-type, and a reaction gas passes through the introduction
pipe 114 and is introduced through the electrode 111 into the
reaction chamber 104.
[0051] As shown in FIG. 1, an insulator 120, for example, alumina
is attached. In this state, when a voltage is applied to the
electrode 111, generated plasma 115 is surrounded by the electrode
111, the substrate holder 112, and the insulator 120.
[0052] Thus, the plasma does not extend over the space between the
electrode and the substrate holder by means of the insulator 120,
and it is possible to prevent unnecessary discharge from occurring
between the electrode 111 and the reaction chamber 104.
[0053] A substrate 109 is carried in and out of the reaction
chamber 104 from the common chamber 107 by carrying means 108. At
the time of carrying the substrate, the substrate holder 112 is
positioned below as indicated by a dotted line 112' in FIG. 1. By
so doing, it is possible to place the substrate 109 by the carrying
means 108 while the insulator 120 does not become an obstacle.
[0054] Further, when a film is formed on the substrate 109, in
order to make the plasma surrounded by the electrode 111, the
substrate holder 112, and the insulator 120, the substrate holder
112 is raised. At this time, the insulator 120 is designed to
become a stopper so that the substrate holder 112 is stopped. By
doing so, it is possible to preclude the possibility that the
substrate holder 112 is excessively raised so that the substrate
109 comes in contact with the electrode 111, whereby safety in
automation of the apparatus is improved.
[0055] As described above, since the plasma 115 does not extend
beyond a prescribed region, plasma density is increased, and
unnecessary discharge such as arc discharge does not occur. Thus, a
film growth speed of a film formed on the substrate 109 is
increased.
[0056] At the film formation, films are formed mainly on the
surface of the electrode 111 and the surface of the insulator 120.
However, since the surface of the insulator 120 has unevenness, the
film attached thereto has good adhesion as compared with that
attached to metal, and becomes hard to transform into particles or
flakes which fall down. Thus, it is possible to decrease the amount
of the particles and flakes, and cleaning of the reaction chamber
by plasma etching becomes easy.
[0057] Further, since the films are mainly formed on the surface of
the electrode 111 and the surface of the insulator 120, and are
hardly formed on the reaction chamber itself, the area to be
cleaned becomes narrow. Further, as described above, since the
plasma does not extend, the plasma density is increased.
[0058] According to the above reasons, a time for cleaning is
shortened, so that it is possible to increase the percentage of a
time contributing to production in hours of operation of the
apparatus.
[0059] Preferred embodiments of the present invention will next be
described specifically with reference to the drawings.
[0060] Embodiment 1
[0061] In this embodiment, the case where a silicon nitride film is
formed on a substrate is used as an example, and a single wafer
processing type plasma CVD apparatus of this embodiment will be
described. FIG. 4 is a sectional view showing a reaction chamber of
the plasma CVD apparatus of this embodiment.
[0062] In FIG. 4, an electrode 402 and a substrate holder 403 are
disposed in a reaction chamber 401. The electrode 402 is of a
mesh-type, and a reaction gas passes through an introduction pipe
409, and is introduced into the reaction chamber through the mesh
electrode 402.
[0063] Insulators, for example, alumina 406, 407 are disposed
between a space 405, which is defined between the electrode 402 and
the substrate holder 403, and the reaction chamber 401.
[0064] A portion designated by 410 is formed of quartz. The quartz
410 is employed for the following reason. The reaction gas comes in
contact with the wall of the reaction chamber through the space
between the insulators 406 and 407. Thus, a film is also formed on
the surface of the wall of the reaction chamber made of aluminum
with which the gas comes in contact. Since this film is formed on
the aluminum, it becomes particles. In order to prevent this, the
quartz 410 is disposed.
[0065] Reference numeral 411 denotes an exhaust pipe, which is
connected to a turbo-molecular pump and a rotary pump in this
order, and which maintains the inside of the reaction chamber in a
decompressed state. In this embodiment, the inside of the reaction
chamber is first set to 0.3 torr.
[0066] Next, in the state where the distance between the substrate
holder 403 and the electrode 402 is 65 mm, a glass substrate 404 is
disposed on the substrate holder 403 by a carrying means (not
shown). In this state, the insulators 406 and 407 do not become
obstacles against setting of the substrate 404.
[0067] Then the substrate holder is raised so that the distance
between the substrate holder 403 and the electrode 402 is made 15
to 25 mm, whereby the state shown in the drawing is obtained. In
this embodiment, the distance is set to 20 mm.
[0068] As described above, the substrate holder 403 is moved up and
down. When the substrate 404 is placed, the substrate holder is
placed in the lower state so that the substrate holder 403 is
sufficiently separated from the insulator 407 and the substrate can
be smoothly placed. When a film is formed on the substrate, the
substrate holder is raised as shown in FIG. 4.
[0069] The position of the substrate (distance between the
substrate and the electrode) can be adjusted. The insulator 407
functions also as a stopper when the substrate holder 403 is
raised, so that the insulator improves the safety when the
substrate holder 403 is raised.
[0070] Although not shown, a heater for heating the substrate 404
is provided in the substrate holder 403.
[0071] A mixed gas of silane, ammonium, nitrogen, and hydrogen is
introduced into the reaction chamber through the mesh electrode 402
at a flow rate of silane/ammonium/nitrogen/hydrogen=30/150/250/100
SCCM. Under the condition of a total pressure of 0.2 to 1 torr, an
RF power of 100 to 300 W is applied to the electrode 402 from a
power source (not shown), to generate plasma in the space 405. The
substrate temperature at this time is set at 250 to 400.degree. C.
In this embodiment, the total pressure is 0.5 torr, the RF power is
200 W, and the substrate temperature is 325.degree. C.
[0072] Since the size of the electrode is 200 mm.PHI., the voltage
applied to the electrode is about 0.3 to 1 W/cm.sup.2. The plasma
generated at this time does not extend by means of the insulators
406 and 407, and arc discharge or the like does not occur between
the wall of the reaction chamber and the electrode.
[0073] In the manner described above, a silicon nitride film is
formed. The film growth speed of a silicon nitride film under the
conditions of this embodiment is about 1,400 .ANG./min. Since the
film growth speed in the case where a film is formed by a
conventional plasma CVD apparatus is about 300 .ANG./min, it would
be understood that a film growth speed is extremely increased.
[0074] As the insulators 406 and 407 are placed as parallel as
possible to each other, a film having good film quality can be
obtained. Especially, if a film of good film quality is desired to
be obtained, it is appropriate that the distance between the
insulators is made rather long. In this embodiment, the distance is
made 3 to 5 mm.
[0075] Silicon nitride films are also formed on the surfaces of the
insulators 406 and 407 at the side of the space 405. However, films
are hardly formed on the surface of the reaction chamber.
[0076] Since these films are formed on the surfaces of alumina,
they tend not to fall down as particles so that the amount of
particles or the like in the reaction chamber is decreased.
[0077] After film formation is carried out to some extent, and some
films are formed on the surfaces of the insulators 406 and 407,
cleaning is carried out. In this embodiment, when the thickness of
a film attached to the insulators becomes 10 to 20 .mu.m, cleaning
is carried out.
[0078] As an etching gas, a mixed gas of nitrogen fluoride and
nitrogen is used. The mixed gas of nitrogen
fluoride/nitrogen=80/300 SCCM is flown in the reaction chamber and
the total pressure is made about 0.2 to 1 torr. In this embodiment,
the total pressure is 0.5 torr.
[0079] The distance between the substrate holder 403 and the
electrode is made about 50 mm. Silicon nitride films are attached
also to the respective surfaces of the insulators 408 and 407. In
order to etch these, the substrate holder is lowered, and the space
between the insulators 407 and 408 is secured.
[0080] Then radio frequency power of 100 to 200 W is applied to
carry out cleaning. In this embodiment, the cleaning is carried out
at 200 W. In this case, etching is ended in about 40 minutes. In
view of the fact that it took conventionally 5 to 6 hours to carry
out cleaning, the time for etching according to this embodiment is
shortened to about 1/8-{fraction (1/9)} of the conventional
cleaning time.
[0081] As described above, the surface of the insulator such as
alumina has more unevenness than the surface of the inner wall of
the reaction chamber, that is, the surface of metal. Thus, the
attached film is hard to peel off, so that it is possible to
decrease the amount of particles and the like falling to the
substrate and the bottom of the reaction chamber, and cleaning is
thus simplified.
[0082] Further, since the insulators 406 and 407 are disposed, it
is possible to prevent the plasma from extending beyond a desired
region. Thus, unnecessary discharge such as arc discharge does not
occur between the electrode and the inner wall of the reaction
chamber, and the plasma density is also increased.
[0083] In addition, since films are hardly formed on the wall of
the reaction chamber, but they are formed on the insulator, the
electrode and the like, an area to be cleaned is narrow.
[0084] As a result, cleaning becomes relatively easy, a time for
cleaning can be shortened, and the percentage of time contributing
to production in hours of operation of the apparatus can be
increased.
[0085] Embodiment 2
[0086] An example in which a silicon oxide film is formed on a
substrate by using the apparatus shown in FIG. 4 will be
described.
[0087] In the apparatus shown in FIG. 4, a reaction gas of
TEOS/oxygen=10/300 SCCM is introduced into the reaction chamber,
and the total pressure is made about 0.5 to 1 torr. In this
embodiment, the total pressure is made 0.75 torr.
[0088] Under the conditions that the substrate temperature is 300
to 400.degree. C., RF power is 150 to 300 W, and the distance
between a substrate and the electrode is 10 to 15 mm, a silicon
oxide film is formed on the substrate. In this embodiment, the
substrate temperature is 350.degree. C., RF power is 200 W, and the
distance is 13.5 mm.
[0089] The film growth speed in these conditions is about 2,000 to
2,300 .ANG./min, which is about 3 times that of a conventional
apparatus.
[0090] Cleaning is carried out in the same way as described in
embodiment 1. However, the total pressure in the reaction chamber
is made about 1 torr, and the distance between the substrate holder
403 and the electrode is made 50 to 60 mm.
[0091] In this embodiment, an etching time is greatly shortened to
20 to 40 minutes.
[0092] As described above, there can be obtained a plasma CVD
apparatus in which unnecessary discharge such as arc discharge does
not occur while a conductive material is used, which is
advantageous to enlargement and easy workability. Further, since
films are not attached to the inner wall of a reaction chamber but
are attached to the surface of an insulator, it is possible to
decrease the amount of particles and the like in the reaction
chamber.
[0093] Moreover, a cleaning time is shortened, and the percentage
of a time contributing to production in hours of operation of the
apparatus can be increased.
* * * * *