U.S. patent application number 10/153622 was filed with the patent office on 2003-01-02 for particle beam processing apparatus and materials treatable using the apparatus.
This patent application is currently assigned to Energy Sciences, Inc.. Invention is credited to Clough, Harvey, Hannafin, George, Rangwalla, Imtiaz.
Application Number | 20030001108 10/153622 |
Document ID | / |
Family ID | 29582087 |
Filed Date | 2003-01-02 |
United States Patent
Application |
20030001108 |
Kind Code |
A1 |
Rangwalla, Imtiaz ; et
al. |
January 2, 2003 |
Particle beam processing apparatus and materials treatable using
the apparatus
Abstract
The present invention is directed to a particle beam processing
apparatus that is smaller in size and operates at a higher
efficiency, and also directed to an application of such apparatus
to treat a coating on a substrate of a treatable material, such as
for flexible packaging. The processing apparatus includes a
particle beam generating assembly, a foil support assembly, and a
processing assembly. In the particle beam generating assembly,
electrons are generated and accelerated to pass through the foil
support assembly. In the flexible packaging application, the
substrate is fed to the processing apparatus operating at a low
voltage, such as 110 kVolts or below, and is exposed to the
accelerated electrons to treat the coating on the substrate.
Inventors: |
Rangwalla, Imtiaz; (Andover,
MA) ; Clough, Harvey; (North Andover, MA) ;
Hannafin, George; (Hudson, NH) |
Correspondence
Address: |
Finnegan, Henderson, Farabow,
Garrett & Dunner, L.L.P.
1300 I Street, N.W.
Washington
DC
20005-3315
US
|
Assignee: |
Energy Sciences, Inc.
|
Family ID: |
29582087 |
Appl. No.: |
10/153622 |
Filed: |
May 24, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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10153622 |
May 24, 2002 |
|
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09434380 |
Nov 5, 1999 |
|
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6426507 |
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Current U.S.
Class: |
250/492.3 |
Current CPC
Class: |
B41M 7/0045 20130101;
H01J 33/00 20130101; G21K 5/10 20130101; B05D 3/068 20130101; B41M
7/0081 20130101; H01J 33/04 20130101 |
Class at
Publication: |
250/492.3 |
International
Class: |
H01J 033/00 |
Claims
We claim:
1. A particle beam treatable material, comprising: a substrate
having a top side and a bottom side; and a particle beam treatable
lacquer coating on the top side of the substrate, the lacquer
coating treated by exposure to highly accelerated particles
generated by a particle beam processing device operating at a
voltage in a range of 110 kVolts or less to cause a chemical
reaction to the lacquer coating; and a radiation labile layer on
the bottom side of the substrate.
2. The particle beam treatable material of claim 1, wherein the
lacquer coating is selected from a functional group consisting
essentially of acrylate ester and multi-functional acrylate for
free radical polymerization, vinyl ethers, cycloaliphatic diepoxide
and polyol systems, and for cationic polymerization.
3. The particle beam treatable material of claim 2, wherein the
multifunctional acrylate is selected from a group consisting
essentially of: acrylated polyols with molecular weights from 150
to 600; polyester acrylates with molecular weights from 1000 to
2000; polyether acryiates with molecular weights from 200 to 1500;
polyester urethane acrylates with molecular weights from 400 to
2000; polyurea acrylates with molecular weights from 400 to 2000;
epoxy acrylates with molecular weights from 300 to 1000; and
mixtures of multifunctional acrylates.
4. The particle beam treatable material of claim 3, wherein the
multifunctional acrylate is further selected from a group
consisting of: pentaerythritol tetraacrylate, ditrimethylolpropane
tetraacrylate, trimethylolpropane triacrylate, glycerol
triacrylate, triacryl ate ester of tris-t2hydroxy-ethyll
isocyanurate, hexanediol diacrylate, and dipentaerythritol
hexacrylate, and ethoxylated and propoxylated derivatives
thereof.
5. The particle beam treatable material of claim 2, wherein the
lacquer coating has a normalized thickness in a range of 0.5-20
grams/m.sup.2.
6. The particle beam treatable material of claim 1, wherein the
highly accelerated particles emit energy in a range of 0.5-10 Mrads
to cause the chemical reaction to the lacquer coating.
7. The particle beam treatable material of claim 1, wherein the
chemical reaction is a polymerization.
8. The particle beam treatable material of claim 7, wherein the
polymerization cures the lacquer coating by transforming from a
liquid state to a solid state.
9. The particle beam treatable material of claim 1, wherein the
chemical reaction is a sterilization.
10. The particle beam treatable material of claim 1, wherein the
chemical reaction is a cross-linking.
11. The particle beam treatable material of claim 1, wherein the
substrate is made of a material selected from a group consisting
essentially of: polyolefins, including oriented polypropylene
(OPP), cast polypropylene, polyethylene and polyethylene copolymer;
polystyrene; polyesters, including polyethylene terephthalate
(PET), or polyethylene naphthalate (PEN); polyolefin copolymers,
including ethylene vinyl acetate, ethylene acrylic acid and
ethylene vinyl alcohol (EVOH), polyvinylalcohol and copolymers
thereof; polyamides, including nylon, and MXD6; polyimides;
polyacrylonitrile; polyvinylchloride; polyvinyl dichloride;
polyvinylidene chloride; polyacrylates; ionomers; polysaccharides,
including regenerated cellulose; silicone, including rubbers or
sealants; natural or synthetic rubbers; glassine or clay coated
paper; paper board; craft paper; and metallized films and vapor
deposited metal oxide coated polymer films, including AlO.sub.x,
SiO.sub.x, or TiO.sub.x.
12. The particle beam treatable material of claim 1, wherein the
substrate has a normalized thickness in a range of 10-200
grams/m.sup.2.
13. The particle beam treatable material of claim 1, further
comprising a label print printed on the top side of the substrate
and protected by the lacquer coating.
14. The particle beam treatable material of claim 1, further
comprising a barrier layer on one of the top and bottom sides of
the substrate to maintain a condition of contents of a packaged
product.
15. The particle beam treatable material of claim 14, further
comprising a label print printed on the top side of the barrier
layer and protected by the lacquer coating.
16. The particle beam treatable material of claim 14, wherein the
barrier layer is applied by a vacuum deposition process.
17. The particle beam treatable material of claim 14, wherein the
barrier layer comprises a layer of vaporized aluminum, including a
layer of aluminum oxides (AlO.sub.x).
18. The particle beam treatable material of claim 17, wherein the
layer of vaporized aluminum has a thickness in a range of 100-1000
Angstroms.
19. The particle beam treatable material of claim 14, wherein the
barrier layer comprises a layer of silicon oxides (SiO.sub.x).
20. The particle beam treatable material of claim 19, wherein the
layer of silicon oxides (SiO.sub.x) has a thickness in a range of
100-1000 Angstroms.
21. The particle beam treatable material of claim 1, wherein the
radiation labile layer is a sealing layer made of a material
suitable to heat seal a packaged product.
22. The particle beam treatable material of claim 21, wherein the
heat seal layer is made of a polymer having a melting point at a
temperature range of 100-150 degrees Celsius.
23. The particle beam treatable material of claim 21, wherein the
heat seal layer is made of a material selected from a group
consisting of polyethylene, polyvinylacetate, ethylene propylene
copolymer, terpolymer ethylene acrylic acid, metallocene, ionomer,
and combination thereof.
24. The particle beam treatable material of claim 1, wherein the
radiation labile layer is a sealing layer made of a material
suitable to cold seal a packaged product.
25. The particle beam treatable material of claim 24, wherein the
cold seal layer is made of a material selected from a group
consisting of natural rubber, polyamides, and combination
thereof.
26. The particle beam treatable material of claim 1, wherein the
radiation labile layer has a normalized thickness in a range of
5-50 grams/m.sup.2.
27. A method for making a particle beam treatable material,
comprising: providing a substrate having a top side and a bottom
side; applying a radiation labile layer on the bottom side of the
substrate; applying a particle beam treatable lacquer coating on
the top side of the substrate; and exposing the lacquer coating to
highly accelerated particles generated by a particle beam
processing device operating at a voltage of 110 kVolts or below to
cause a chemical reaction to the lacquer coating without effecting
the radiation labile layer.
28. The method of claim 27, wherein the lacquer coating is selected
from a functional group consisting essentially of: acrylate ester
for free radical polymerization, vinyl ethers, cycloaliphatic
diepoxide and polyol systems, for cationic polymerization, and
multifunctional acrylate.
29. The method of claim 28, wherein the multifunctional acrylate is
selected from a group consisting essentially of: acrylated polyols
with molecular weights from 150 to 600; polyester acrylates with
molecular weights from 1000 to 2000; polyether acryiates with
molecular weights from 200 to 1500; polyester urethane acrylates
with molecular weights from 400 to 2000; polyurea acrylates with
molecular weights from 400 to 2000; epoxy acrylates with molecular
weights from 300 to 1000; and mixtures of multifunctional
acrylates.
30. The method of claim 29, wherein the multifunctional acrylate is
further selected from a group consisting essentially of:
pentaerythritol tetraacrylate, ditrimethylolpropane tetraacrylate,
trimethylolpropane triacrylate, glycerol triacrylate, triacrylate
ester of tris-t2hydroxy-ethyll isocyanurate, hexanediol diacrylate,
and dipentaerythritol hexacrylate, and ethoxylated and propoxylated
derivatives thereof.
31. The method of claim 28, wherein the lacquer coating has a
normalized thickness in a range of 0.5-20 grams/m.sup.2.
32. The method of claim 27, wherein the applying a lacquer coating
comprises applying by one of a roll coating application, an offset
gravuare application, a direct gravuare application, and a
combination thereof.
33. The method of claim 27, wherein the highly accelerated
particles emit energy in a range of 0.5-10 Mrads to cause the
chemical reaction to the lacquer coating.
34. The method of claim 27, wherein the chemical reaction comprises
a polymerization.
35. The method of claim 34, wherein the polymerization cures the
lacquer coating transforming from a liquid state to a solid
state.
36. The method of claim 27, wherein the substrate is made of a
material selected from a group consisting essentially of:
polyolefins, including oriented polypropylene (OPP), cast
polypropylene, polyethylene and polyethylene copolymer;
polystyrene; polyesters, including polyethylene terephthalate
(PET), or polyethylene naphthalate (PEN); polyolefin copolymers,
including ethylene vinyl acetate, ethylene acrylic acid and
ethylene vinyl alcohol (EVOH), polyvinylalcohol and copolymers
thereof; polyamides, including nylon, and MXD6; polyimides;
polyacrylonitrile; polyvinylchloride; polyvinyl dichloride;
polyvinylidene chloride; polyacrylates; ionomers; polysaccharides,
including regenerated cellulose; silicone, including rubbers or
sealants; natural or synthetic rubbers; glassine or clay coated
paper; paper board; craft paper; and metallized films and vapor
deposited metal oxide coated polymer films, including AlO.sub.x,
SiO.sub.x, or TiO.sub.x.
37. The method of claim 27, wherein the substrate has a normalized
thickness in a range of 10-200 grams/m.sup.2.
38. The method of claim 27, further comprising applying a label
print on the top side of the substrate, the label print being
protected by the lacquer coating.
39. The method of claim 38, wherein the applying a label print
comprises applying by one of a flexography printing, a
rotor-gravuare printing, an offset lithography printing, a spray
printing, and a combination thereof.
40. The method of claim 27, further comprising applying a barrier
layer on one of the top and bottom sides of the substrate to
maintain a condition of contents of a packaged product.
41. The method of claim 40, further comprising applying a label
print on the top side of the barrier layer and protected by the
lacquer coating.
42. The method of claim 40, wherein the applying a barrier layer is
performed by a vacuum deposition process.
43. The method of claim 40, wherein the applying a barrier layer
further comprises applying a layer of vaporized aluminum, including
a layer of aluminum oxides (AlO.sub.x).
44. The method of claim 43, wherein the layer of vaporized aluminum
has a thickness in a range of 100-1000 Angstroms.
45. The method of claim 40, wherein the applying a barrier layer
further comprises applying a layer of silicon oxides
(SiO.sub.x).
46. The method of claim 45, wherein the layer of silicon oxides
(SiO.sub.x) has a thickness in a range of 100-1000 Angstroms.
47. The method of claim 27, wherein the applying a radiation labile
layer further comprises applying a heat seal layer to heat seal a
packaged product.
48. The method of claim 47, wherein the applying a heat seal layer
further comprises extruding the heat seal layer onto the bottom
side of the substrate.
49. The method of claim 47, wherein the heat seal layer is made of
a polymer having a melting point at a temperature range of 100-150
degrees Celsius.
50. The method of claim 47, wherein the heat seal layer is made of
a material selected from a group consisting of polyethylene,
polyvinylacetate, ethylene propylene copolymer, terpolymer ethylene
acrylic acid, metallocene, ionomer, and combination thereof.
51. The method of claim 27, wherein the applying a radiation labile
layer further comprises applying a cold seal layer to cold seal a
packaged product.
52. The method of claim 51, wherein the cold seal layer is made of
a material selected from a group consisting of natural rubber,
polyamides, and combination thereof.
53. The method of claim 47, wherein the cold seal layer has a
normalized thickness in a range of 5-50 grams/m.sup.2.
54. A particle beam processing device of small size and high
efficiency that causes a chemical reaction on a substrate,
comprising: a power supply; a vacuum pump to create and maintain a
vacuum environment in a vessel; a particle generating assembly
located in a vacuum vessel and connected to the power supply
operating at a first voltage in a range of 110 kVolts or less, the
particle generating assembly including at least one filament for
generating a plurality of particles upon heating; a foil support
assembly operating at a second voltage, which is higher than the
first voltage, to permit at least a portion of said particles to
travel from the first to the second voltage and exit the foil
support assembly, the foil support assembly comprising a thin foil
made of titanium or alloys thereof having a thickness of 10
micrometers or less; and a processing assembly for receiving said
particles exiting the foil support assembly for use to cause said
chemical reaction, wherein a machine yield (K) of the processing
device is determined according to: 4 K = D o s e S p e e d C u r r
e nt whereby: K is machine yield measured in
Mrads.multidot.feet/min/mAmp, Dose is energy absorbed per unit mass
measured in Mrads, Speed is feed rate of the substrate measured in
feet/min, and Current is a number of electrons extracted from the
heated filament measured in mAmp.
55. A particle beam processing device of claim 54, wherein the
machine yield (K) is equal to or above 20/L where L is the width of
the processing device measured in feet.
56. A particle beam processing device of small size and high
efficiency that causes a chemical reaction on a substrate,
comprising: a power supply; a vacuum pump to create and maintain a
vacuum environment in a vessel; a particle generating assembly
located in a vacuum vessel and connected to the power supply
operating at a first voltage in a range of 110 kVolts or less, the
particle generating assembly including at least one filament for
generating a plurality of particles upon heating; a foil support
assembly operating at a second voltage, which is higher than the
first voltage, to permit at least a portion of said particles to
travel from the first to the second voltage and exit the foil
support assembly, the foil support assembly comprising a thin foil
made of aluminum or alloys thereof having a thickness of 20
micrometers or less; and a processing assembly for receiving said
particles exiting the foil support assembly for use to cause said
chemical reaction; wherein a machine yield (K) of the processing
device is determined according to: 5 K = D o s e S p e e d C u r r
e nt whereby: K is machine yield measured in
Mrads.multidot.feet/min/mAmp, Dose is energy absorbed per unit mass
measured in Mrads, Speed is feed rate of the substrate measured in
feet/min, and Current is a number of electrons extracted from
filament measured in mAmp.
57. A particle beam processing device of claim 56, wherein the
machine yield (K) is equal to or above 20/L where L is the width of
the processing device measured in feet.
58. A method for causing a chemical reaction on a substrate in a
particle beam processing device, comprising: creating and
maintaining a vacuum in a particle generating assembly having at
least one filament; heating the at least one filament to create a
plurality of particles; operating the particle generating assembly
at a first voltage having a range of 110 kVolts or less; operating
a foil support assembly having a thin foil at a second voltage,
which is higher than the first voltage, to cause at least a portion
of said particles to travel from the first voltage to the second
voltage, and to exit the vacuum in the particle generating
assembly, the thin foil being made of titanium or alloys thereof
and having a thickness of 10 micrometers or less; and passing the
exiting particles through the thin foil to enter a processing
assembly where the substrate is being exposed to the particles;
wherein a machine yield (K) of the processing device is determined
by: 6 K = D o s e S p e e d C u r r e nt whereby: K is machine
yield measured in Mrads.multidot.feet/min/mAmp, Dose is energy
absorbed per unit mass measured in Mrads, Speed is feed rate of the
substrate measured in feet/min, and Current is a number of
electrons extracted from filament measured in mAmp.
59. The method of claim 58, wherein the machine yield (K) is equal
to or above 20/L where L is a width of the processing device
measured in feet.
60. A method for causing a chemical reaction on a substrate in a
particle beam processing device, comprising: creating and
maintaining a vacuum in a particle generating assembly having at
least one filament; heating the at least one filament to create a
plurality of particles; operating the particle generating assembly
at a first voltage having a range of 1 10 kVolts or less; operating
a foil support assembly having a thin foil at a second voltage,
which is higher than the first voltage, to cause at least a portion
of said particles to travel from the first voltage to the second
voltage, and to exit the vacuum in the particle generating
assembly, the thin foil being made of aluminum or alloy thereof and
having a thickness of 20 micrometers or less; and passing the
exiting particles through the thin foil to enter a processing
assembly where the substrate is being exposed to the particles,
wherein a machine yield (K) of the processing device is determined
according: 7 K = D o s e S p e e d C u r r e nt whereby: K is
machine yield measured in Mrads.multidot.feet/min/mAmp, Dose is
energy absorbed per unit mass measured in Mrads, Speed is feed rate
of the substrate measured in feet/min, and Current is a number of
electrons extracted from filament measured in mAmp.
61. The method of claim 60, wherein the machine yield (K) is equal
to or above 20/L where L is a width of the processing device
measured in feet.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation-in-part of U.S.
application Ser. No. 09/434,380 filed Nov. 5, 1999, issued as U.S.
Pat. No. ______
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] This invention relates to a particle beam processing
apparatus and materials treatable using such apparatus. In
particular, this invention relates to a particle beam processing
apparatus including a particle generating assembly, a foil support
assembly having a thin foil, and a processing zone. When the
treatable material is exposed to the particles generated by the
apparatus, the particles cause a chemical reaction on a coating of
the material.
[0004] 2. Description of the Related Art
[0005] A particle beam processing device is commonly used to expose
a substrate or coating to highly accelerated particle beams, such
as an electron beam (EB), to cause a chemical reaction on the
substrate or coating.
[0006] An electron is a negatively charged particle found in all
matter. Electrons revolve around the nucleus of an atom much like
planets revolve around the sun. By sharing electrons, two or more
atoms bind together to form molecules. In EB processing, energetic
electrons are used to modify the molecular structure of a wide
variety of products and materials. For example, electrons can be
used to alter specially designed liquid coatings, inks and
adhesives. During EB processing, electrons break bonds and form
charged particles and free radicals. These radicals then combine to
form large molecules. By this process, the liquid is transformed
into a solid. This process is known as polymerization.
[0007] Liquid coatings treated with EB processing may include
printing inks, varnishes, silicone release coatings, primer
coatings, pressure sensitive adhesives, barrier layers and
laminating adhesives. EB processing may also be used to alter and
enhance the physical characteristics of solid materials such as
paper, substrates and non-woven textile substrates, all specially
designed to react to EB treatment.
[0008] A particle beam processing device generally includes three
zones, i.e., a vacuum chamber zone where a particle beam is
generated, a particle accelerator zone, and a processing zone. In
the vacuum chamber, a tungsten filament is heated to about 2400K,
which is the thermionic emission temperature of tungsten, to create
a cloud of electrons. A positive voltage differential is then
applied to the vacuum chamber to extract and simultaneously
accelerate these electrons. Thereafter, the electrons pass through
a thin foil and enter the processing zone. The thin foil functions
as a barrier between the vacuum chamber and the processing zone.
Accelerated electrons exit the vacuum chamber through the thin foil
and enter the processing zone at atmospheric conditions.
[0009] Electron beam processing devices that are commercially
available at the present time generally operate at a minimum
voltage of 125 kVolts. These existing EB units utilize thin foil
made of titanium having a thickness of 12.5 micrometers, to cure
coatings on substrates that are being fed through the processing
devices at a rate of 800-1000 feet per minute. Such an EB unit may
be purchased from Energy Sciences, Inc. of Wilmington, Mass., Model
No. 125/105/1200. The current technology cannot be used in certain
industries, e.g., flexible food packaging. An EB unit operating at
125 kVolts deposits substantial amounts of the energy onto the
polyethylene based sealant films which contact the food being
packaged. This deposit causes off-odors in the films and increases
its seal initiation temperatures.
[0010] The efficiency of such EB units can be improved by reducing
the operating voltage below 125 kVolts. In addition, operating
below 125 kVolts allows better control of the depth of energy
deposition and minimizes the electron energy absorbed by the
sealant films. However, when the voltage is reduced below 125
kVolts, the kinetic energy of the electrons traveling through the
titanium foil decreases because more energy is being absorbed by
the titanium foil, causing the foil to heat up excessively.
Excessive heat causes the titanium foil to become blue, brittle,
and lose its mechanical strength. Excessive heat also poses a
problem with heat management of the system. Consequently, the feed
rate of the substrate must be substantially reduced which makes the
processing device commercially unviable.
[0011] In light of the foregoing, there is a need for a particle
beam processing device that operates more efficiently, is smaller
in size, has a reduced power demand, and is cheaper to
construct.
SUMMARY OF THE INVENTION
[0012] The advantages and purposes of the invention will be set
forth in part in the description which follows, and in part will be
obvious from the description, or may be learned by practice of the
invention. The advantages and purposes of the invention will be
realized and attained by the elements and combinations particularly
pointed out in the appended claims.
[0013] To attain the advantages and in accordance with the purposes
of the invention, as embodied and broadly described herein, one
aspect of the invention is directed to a particle beam treatable
material comprising a substrate having a top side and a bottom
side, and a particle beam treatable lacquer coating on the top side
of the substrate. The lacquer coating is treated by exposure to
highly accelerated particles generated by a particle beam
processing device operating at a voltage in a range of 110 kVolts
or below to cause a chemical reaction to the lacquer coating. The
particle beam treatable material also comprises a radiation labile
layer on the bottom side of the substrate.
[0014] A second aspect of the invention is directed to a method for
making a particle beam treatable material. The method comprises
providing a substrate having a top side and a bottom side, applying
a radiation labile layer on the bottom side of the substrate,
applying a particle beam treatable lacquer coating on the top side
of the substrate, and exposing the lacquer coating to highly
accelerated particles generated by a particle beam processing
device operating at a voltage of 110 kVolts or below to cause a
chemical reaction to the lacquer coating without effecting the
radiation labile layer.
[0015] A third aspect of the invention is directed to a particle
beam processing device that is smaller in size than currently
available devices and that has higher efficiency for causing a
chemical reaction on a substrate. The device comprises
[0016] a power supply, a vacuum pump to create and maintain a
vacuum environment in a vessel, and a particle generating assembly
located in a vacuum vessel and connected to the power supply
operating at a first voltage in a range of 110 kVolts or less. The
particle generating assembly includes at least one filament for
generating a plurality of particles upon heating. The device also
comprises a foil support assembly and a processing assembly. The
foil support assembly operates at a second voltage, which is higher
than the first voltage, to permit at least a portion of the
particles to travel from the first to the second voltage and exit
the foil support assembly. The foil support assembly may comprise a
thin foil made of titanium or alloys thereof having a thickness of
10 micrometers or less, or a thin foil made of aluminum or alloys
thereof having a thickness of 20 micrometers or less. The
processing assembly receives the particles exiting the foil support
assembly for use to cause the chemical reaction. A machine yield
(K) of the processing device is determined according to: 1 K = D o
s e S p e e d C u r r e nt
[0017] whereby:
[0018] K is machine yield measured in
Mrads.multidot.feet/min/mAmp,
[0019] Dose is energy absorbed per unit mass measured in Mrads,
[0020] Speed is feed rate of the substrate measured in feet/min,
and
[0021] Current is a number of electrons extracted from the heated
filament measured in mAmp.
[0022] A fourth aspect of the invention is directed to a method for
causing a chemical reaction on a substrate in a particle beam
processing device. The method comprises creating and maintaining a
vacuum in a particle generating assembly having at least one
filament, heating the at least one filament to create a plurality
of particles, and operating the particle generating assembly at a
first voltage having a range of 110 kVolts or less. The method also
comprises operating a foil support assembly having a thin foil at a
second voltage, which is higher than the first voltage, to cause at
least a portion of said particles to travel from the first voltage
to the second voltage, and to exit the vacuum in the particle
generating assembly. The thin foil may be made of titanium or
alloys thereof and having a thickness of 10 micrometers or less.
Alternatively, the thin foil may be made of aluminum or alloys
thereof and having a thickness of 20 micrometers or less. The
method further comprises passing the exiting particles through the
thin foil to enter a processing assembly where the substrate is
exposed to the particles. A machine yield (K) of the processing
device is determined by: 2 K = D o s e S p e e d C u r r e nt
[0023] whereby:
[0024] K is machine yield measured in
Mrads.multidot.feet/min/mAmp,
[0025] Dose is energy absorbed per unit mass measured in Mrads,
[0026] Speed is feed rate of the substrate measured in feet/min,
and
[0027] Current is a number of electrons extracted from filament
measured in mAmp.
[0028] It is to be understood that both the foregoing general
description and the following detailed description are exemplary
and explanatory only and are not restrictive of the invention as
claimed. Additional advantages will be set forth in the description
that follows, and in part will be understood from the description,
or may be learned by practice of the invention. The advantages and
purposes may be obtained by means of the combinations set forth in
the attached claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0029] The accompanying drawings, which are incorporated in and
constitute a part of this specification, illustrate several
embodiments of the invention and, together with the description,
serve to explain the principles of the invention. In the
drawings,
[0030] FIG. 1 is a schematic view of the particle beam processing
device according to one embodiment of the present invention;
[0031] FIG. 2 is a schematic view of a voltage profile of an
electron beam;
[0032] FIG. 3 is a front view of the particle beam processing
device according to the preferred embodiment of the present
invention;
[0033] FIG. 4 is a chart of depth dose profiles as a function of
thickness of titanium foil measured at an operating voltage of 90
kVolts;
[0034] FIG. 5 is a chart of machine yields for a processing device
having a width of 1.5 feet as a function of operating voltage
measured using titanium foil thicknesses of 5, 8, 10 and 12.5
micrometers;
[0035] FIG. 6 is a chart of depth dose profiles as a function of
thickness of titanium foil measured at various operating voltages;
and
[0036] FIG. 7 is a chart of energy absorbed by the thin foil as a
function of the incident energy in keV measured using titanium foil
thicknesses of 17, 12.5, and 8 micrometers;
[0037] FIG. 8 is a schematic view of a crosslinking reaction on a
substrate as the substrate passes through a particle beam
processing device;
[0038] FIG. 9 is a schematic view of a polymerization reaction on a
substrate as the substrate passes through the particle beam
processing device;
[0039] FIG. 10 is a schematic view of a sterilization reaction on a
substrate as the substrate passes through the particle beam
processing device; and
[0040] FIG. 11 is a cross-section view of a length of a web for
flexible packaging material according to an embodiment of the
present invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0041] Reference will now be made in detail to several embodiments
of apparatus, materials, and methods consistent with the invention,
examples of which are illustrated in the accompanying drawings.
Wherever possible, the same reference numbers will be used
throughout the drawings to refer to the same or like parts.
Moreover, the invention will be further clarified by the examples
which follow.
[0042] A particle beam processing device according to the present
invention can be made relatively small in size and to operate at
high efficiency due to at least two aspects of the invention; (1)
the operating voltage is reduced to 110 kVolts or less, and (2) the
thin foil, if made of titanium or alloys thereof, has a thickness
of 10 micrometers or less, and if made of aluminum or alloys
thereof, has a thickness of 20 micrometers or less.
[0043] In accordance with the principles of the present invention,
a particle beam processing device comprises a power supply, a
particle generating assembly, a foil support assembly, and a
processing assembly.
[0044] FIG. 1 schematically illustrates a particle beam processing
device 100 consistent with the principles of this invention,
including power supply 102, particle beam generating assembly 110,
foil support assembly 140, and processing assembly 170. Power
supply 102 preferably provides an operating voltage of 110 kVolts
or less, more preferably in a range of 90-100 kVolts, to the
processing device 100. Power supply 102 may be of a commercially
available type that includes multiple electrical transformers
located in an electrically insulated steel chamber to provide high
voltage to particle beam generating assembly 110 to produce
particles, such as electrons.
[0045] Particle beam generating assembly 110 is preferably kept in
a vacuum environment of vessel or chamber 114. In an EB processing
device, particle generating assembly 110 is commonly referred to as
an electron gun assembly. Evacuated chamber 114 may be constructed
of a tightly sealed vessel in which particles, such as electrons,
are generated. Vacuum pump 212 (shown in FIG. 3) is provided to
create a vacuum environment in the order of approximately 10.sup.-6
Torr. Inside the vacuum environment of chamber 114, a cloud of
electrons are generated around filament 112 when high-voltage power
supply 102 sends electrical power to heat up filament 112.
[0046] Filament 112 then glows white hot and generates a cloud of
electrons. Electrons are then drawn from filament 112 to areas of
higher voltage, since electrons are negatively charged particles,
as described below and accelerated to extremely high speeds.
Filament 112 may be constructed of one or more wires commonly made
of tungsten, and may be configured to be spaced evenly across the
length of foil support 144 and emits electron beams across the
width of a substrate 10.
[0047] As shown in FIGS. 1 and 2, particle beam generating assembly
110 may include an extractor grid 116, a terminal grid 118, and a
repeller plate 120. Repeller plate 120 repels electrons and sends
the electrons toward extractor grid 116. Repeller plate 120
operates at a different voltage, preferably slightly lower, than
filament 112 to collect electrons escaping from filament 112 away
from electron beam direction as shown in FIG. 2.
[0048] Extractor grid 116, operating at a slightly different
voltage, preferably higher than filament 112, attracts electrons
away from filament 112 and guides them toward terminal grid 118.
Extractor grid 116 controls the quantity of electrons being drawn
from the cloud, which determines the intensity of the electron
beam.
[0049] Terminal grid 118, operating generally at the same voltage
as extractor grid 116, acts as the final gateway for electrons
before they accelerate to extremely high speeds for passage through
foil support assembly 140.
[0050] According to one embodiment of the present invention, for
example, filament 112 may operate at -110,000 Volts and foil
support assembly 140 may be grounded or set at 0 Volt. Repeller
plate 120 may be selected to operate at -110,010 Volts to repell
any electrons towards filament 112. Extractor grid 116 and terminal
grid 118 may be selected to operate in a range of -110,000 Volts to
-109,700 Volts.
[0051] The electrons then exit vacuum chamber 114 and enter the
foil support assembly 140 through a thin foil 142 to penetrate a
coated material or substrate 10 for the chemical reaction. The
chemical reaction includes, for example, polymerization,
crosslinking or sterilization. The speed of the electrons may be as
high as or above 100,000 miles per second. Foil support assembly
140 may be made up of a series of parallel copper ribs (not shown).
Thin foil 142, as shown in FIG. 1, is securely clamped to the
outside of foil support assembly 144 to provide a leak-proof vacuum
seal inside chamber 114. High speed electrons pass freely between
the copper ribs, through thin foil 142 and into substrate 10 being
treated. To prevent an undue energy loss, the foil is preferably
made as thin as possible while at the same time providing
sufficient mechanical strength to withstand the pressure
differential between the vacuum state inside particle generating
assembly 110 and processing assembly 170.
[0052] In accordance with the principles of this invention, the
particle beam generating device can be made smaller in size and
operate at a higher efficiency level when the thin foil of the foil
support assembly is made of titanium or alloys thereof and having a
thickness of 10 micrometers or less, preferably in a range of 3-10
micrometers, more preferably in a range of 5-8 micrometers.
Alternatively, thin foil 142 may also be constructed of aluminum or
alloys thereof having a thickness of 20 micrometers or less,
preferably in a range of 6-20 micrometers, more preferably in a
range of 10-16 mircometers.
[0053] Once the electrons exit the foil support assembly 140, they
enter the processing assembly 170 where the electrons penetrate a
coating or web substrate 10 and cause a chemical reaction resulting
in polymerization, crosslinking or sterilization. As shown in FIG.
3, the coating or web substrate 10 is being fed into the processing
device 100 to enter processing assembly 170. Processing assembly
170 includes a web entrance 202 where substrate 10 enters, rollers
204, 206, and 208 to guide and deliver substrate 10 through the
processing assembly 170, and a web exit 210 where substrate 10
exits the processing device 100. The product being treated is
instantaneously transformed, needs no drying or cooling and
contains many new and desirable physical properties. Products can
be shipped immediately after processing.
[0054] The particle beam processing device may include a protective
lining surrounding at least a portion of the periphery of the
device to absorb radiation, such as X-ray, emitted when the
electrons decelerate as they are absorbed in matter.
[0055] As shown in FIG. 1, a protective lining 190 surrounds the
periphery of processing device 100, such as evacuated chamber 114
and processing assembly 170. Protective lining 190 absorbs
substantially all X-rays created when electrons decelerate in
matter. The thickness and material selected for protective lining
190 form a function primarily determined by the desired absorption
rate of the X-rays. In one embodiment, protective lining 190 is
preferably capable of absorbing X-ray radiation at an absorption
rate with residuals less than or equal to approximately 0.1
mrem/hour. The unit mrem/hour represents an absorption of 0.1 mili
radiation equivalent to man per one hour. One milirem is equivalent
to 1 milirad for electrons and X-rays. One way to measure the
radiation emitted is by measuring the absorption at a distance of
10 cm away from protective lining 190 by an instrument such as an
ionization chamber instrument commercially known as Bicron RSO-5.
To further enhance safety measure of particle beam processing
device 100, a safety interlock switches (not shown) may be provided
to ensure safe operation by automatically stopping production
whenever interlocks are opened.
[0056] The particle beam processing device may further include a
processor, such as a computerized microprocessor, to regulate the
quantity of electrons generated so the electron beam output is
proportional to the feeding speed of the substrate. As shown in
FIG. 1, a process control system 200 is provided to control several
processes including but not limited to maintaining the required
vacuum environment, initiating system operation with predetermined
voltages and filament power, synchronizing electron generation with
process speed to maintain constant treatment level, monitoring
functions and interlocks, and providing warnings and/or alarms
whenever the system functions exceed set limits or an interlock
problem is detected.
[0057] In operation, particle beam processing device 100 works as
follows. A vacuum pump 212 (shown in FIG. 3) evacuates air from
chamber 114 to achieve a vacuum level of approximately 10.sup.-6
Torr, at which point processing device 100 is fully operational. In
particle generating assembly 110, particle gun assembly components,
including repeller plate 120, extractor grid 116, and terminal grid
118, are set at three independently controlled voltages which
initiate the emission of electrons and guide their passage through
foil support 144.
[0058] During the particle beam processing, a combination of
electric fields inside evacuated chamber 114 create a "push/pull"
effect that guides and accelerates the electrons toward thin foil
142 of foil support 144, which is at ground (0) potential. The
quantity of electrons generated is directly related to the voltage
of extractor grid 116. At slow production speeds, extractor grid
116 is set at a lower voltage than at high speeds, when greater
voltage is applied. As the voltage of extractor grid 116 increases,
so does the quantity of electrons being drawn from filament
112.
[0059] The coatings to be cured, for example, inks, adhesives and
other coatings, generally require a low oxygen environment to cause
the chemical conversion from a liquid state into a solid state.
Therefore, the particle beam processing device according to this
invention may include, as illustrated in FIG. 1, a plurality of
nozzles 172, 174, 176, and 178 distributed in processing zone 170
to inject gas other than oxygen to displace the oxygen therein. In
one embodiment, nitrogen gas is selected to be pumped into
processing zone 170 through nozzles 172, 174, 176, and 178 to
displace the oxygen that would prevent complete curing.
[0060] As can be seen from the description above, particle beam
processing device 100 can be calibrated to achieve extremely high
precision specification because process control system 200 may be
set to provide the exact depth level of cure desired on a substrate
or coating. Process control system 200 calculates the dose and the
depth of electron penetration into the coating or substrate. The
higher the voltage, the greater the electron speed and resultant
penetration.
[0061] Dose is the energy absorbed per unit mass and is measured in
terms of megarads (Mrad), which is equivalent to 2.4 calories per
gram. A higher number of electrons absorbed reflects a higher dose
value. In application, dose is commonly determined by the material
of the coating and the depth of substrate to be cured. For example,
a dose of 5 Mrad may be required to cure a coating on a substrate
that is made of rice paper and having a mass density of 20
gram/m.sup.2. Dose is directly proportional to the operating beam
current which is the number of electrons extracted, and inversely
proportional to the feed speed of the substrate, as expressed by
the following formula:
Dose=K.multidot.(I/S)
[0062] whereby I is the current measured in mAmp, S is the feed
speed of the substrate measured in feet/min, and K is a
proportionality constant which represents a machine yield of the
processing device, or the output efficiency of that particular
processing device.
[0063] The following examples as illustrated in the charts shown in
FIGS. 4-7 are provided as a result of a series of experiments. FIG.
4 illustrates the relationship between depth dose profiles and mass
density of the coatings with respect to three different thicknesses
of the thin foil as measured at an operating voltage of 90 kV. FIG.
5 illustrates the relationship between operating voltage ("High
Voltage") as measured in kVolts and the machine yield K for a
processing device having a width of 1.5 feet with respect to thin
foil made of titanium having thicknesses of 5, 8, and 12.5
micrometers. FIG. 6 illustrates the relationship between depth dose
profiles and mass density of the coatings with respect to various
operating voltages. FIG. 7 illustrates the relationship between
energy absorbed by the thin foil ("dE") measured in keV and
incident energy or operating voltage measured in keV with respect
to three titanium foil having thickness of 17, 12.5, and 8
micrometers.
[0064] The goal of the present invention is to increase the output
efficiency of the processing device by applying an operating
voltage that is as low as possible to reduce the power needed to
generate the operating voltage which makes the processing device
more compact and cheaper to build. Thus, as shown in the depth dose
profiles of FIG. 6, the optimum curve preferably moves closer
towards an imaginary vertical line crossing the X-axis representing
the density of the coating to be cured. However, as previously
discussed, reducing the operating voltage causes a tremendous heat
problem which renders the processing device not commercially
viable. As illustrated in FIGS. 4 and 7, heat problem can be solved
by utilizing a titanium foil that has a thickness of 10 micrometers
or less.
[0065] The data taken in these experiments was measured utilizing
thin film dosimetry techniques. Dosimetry techniques involve nylon
films which have thicknesses in the range of 9-10 micrometers. The
dosimeters contain a radiochromic dye that changes color from
colorless to blue when the dye is exposed to electromagnetic
radiation. The intensity of the blue color is directly proportional
to the amount of radiation exposure obtained from the nylon films.
By measuring the intensity or optical density of the blue color
using a densitometer, one can convert the measured optical density
to the absorbed dose in Mrads. The conversion from optical density
to dose in Mrads is achieved by prior calibration of the dosimeters
and the densitometer using Co.sup.6o Gamma facility at the National
Institute of Standards and Technology, Gaithersburg, Md. These
experiments utilized Dosimeters Model FWT-60-810 manufactured by
Far West Technology, Goleta, Calif. and Densitometer Model 92 SXN
3285 manufactured by Far West Technology, Goleta, Calif.
EXAMPLE 1
[0066] The result of a first experiment, shown in FIG. 4, indicates
that particle beam processing device 100 using thin foil 142 that
is made of titanium having a thickness of less than 12.5 micrometer
improves the electron penetration in substrate 10.
[0067] In the first experiment, thin film nylon dosimeters were
used to measure the penetration capability of electrons. The
parameters for this experiment include: a constant operating
voltage of 90 kVolts, a dose of 5 Mrads, and a thin titanium foil.
Three specimens were tested to study three different titanium foil
thicknesses of 12.5, 8, and 5 micrometers, one for each foil
thickness.
[0068] The three specimens were made of thirty dosimeters, each
having a surface area of approximately 2.times.2 cm.sup.2. These
dosimeters were divided into three stacks, each stack containing an
arrangement of ten dosimeters one on top of the other. One edge of
each stack of dosimeters was taped to a polyester carrier having a
thickness of 125 micrometer. The three polyester carriers were then
taped to a paper substrate and fed through processing device 100 to
receive radiation treatment. The first stack was treated in
processing device 100 with 12.5 micrometer titanium foil; the
second stack with 8 micrometers, and the third stack with 5
micrometers. Following the radiation treatment, the three stacks
were annealed in an oven at 60.degree. C. for 5 minutes. The
dosimeters were then separated, individually measured on the
densitometer, and converted to dose in terms of Mrads. For each
stack, the dose values obtained were normalized to the first
dosimeter.
[0069] FIG. 4 shows the data resulted from this experiment with the
Y-axis representing the normalized dose for each stack and the
X-axis representing the mass density in terms of gram/m.sup.2. The
mass density was obtained by measuring the dosimeters mass density
that resulted in 10 grams/m.sup.2. It is assumed that the first
point is at one half of the mass density, and then each mass
density is added to it for subsequent points. This experiment
concludes that the thinner the foil is used in particle beam
processing device 100, the higher electron penetration on substrate
10 is achieved.
EXAMPLE 2
[0070] The result of a second experiment, shown in FIG. 5,
indicates that thinner foil not only improves electron penetration
on a substrate, but also increases the efficiency or machine yield
K.
[0071] In the second experiment, similar to the first experiment,
thin film nylon dosimeters were used to measure the machine yield K
of a processing device having a width of 1.5 feet at various
operating voltages measured in kVolts. Four measurements were run
to study four different titanium foils having thicknesses of 12.5,
10, 8, and 5 micrometers.
[0072] The value of machine yield K was obtained by calculating the
average of nine individual dosimeter chips. Each dosimeter of
2.times.2 cm.sup.2 was taped on one edge to a polyester carrier.
Each polyester carrier contained nine dosimeters. The polyester
carrier was taped to the paper substrate and fed through processing
device 100 to receive radiation treatment. After irradiation the
dosimeters were annealed at 60.degree. C. for 5 minutes.
Thereafter, the optical density and the dose value were measured.
For each measurement, processing device 100 was set to deliver 4
Mrads to the dosimeters. Processing device 100 included several
gauges (not shown) to indicate the feed rate of the substrate in
feet/minute and the current of the particle beam in mAmp. The
average dose was determined and used to calculate the K value
according to the following equation: 3 K ( M r a d s - f e e t /
min / m A mp ) = D o s e ( M r a d s ) .times. S p e e d ( f e e t
/ min ) C u r r e n t ( m A m p )
[0073] The same procedure was repeated for all voltages.
[0074] FIG. 5 shows the data resulted from this experiment with the
Y-axis representing the machine yield K and the X-axis representing
the operating voltages in kVolts. This experiment concludes that
thinner foil increases the efficiency or machine yield K. Machine
yield K of the processing device in accordance with the present
invention increases, and reaches an optimum value at the
corresponding optimum operating voltage. As shown in FIG. 5, when a
10 micrometer titanium foil is used and the processing device
operates at 110 kVolts, the machine yield reaches approximately 23.
When an 8 micrometer titanium foil is used and the processing
device operates at 100 kVolts, the machine yield reaches
approximately 30 at 90-100 kVolts. Similarly, when a 5 micrometer
titanium foil is used and the processing device operates at 70
kVolts, the machine yield reaches almost 30. Comparing the machine
yield K between the processing device using 12.5 micrometer
titanium foil and the processing devices using 10, 8 and 5
micrometers titanium foils, the following relationship is
deduced:
K.gtoreq.20/L
[0075] for a 10 micrometer titanium foil operating at a voltage of
80-110 kVolts;
[0076] for an 8 micrometer titanium foil operating at a voltage of
70-110 kVolts;
[0077] for a 5 micrometer titanium foil operating at a voltage of
60-110 kvolts;
[0078] wherein L is the width of the processing device measured in
feet, in this case 1.5 feet.
EXAMPLE 3
[0079] The result of a third experiment, as shown in FIG. 6,
illustrates one advantage of operating processing device 100 at a
voltage of 110 kVolts or less in the field of Flexible Food
Packaging.
[0080] In the third experiment, depth dose profiles for processing
device 100 at various operating voltages were measured according to
the procedure described earlier with respect to the first
experiment. A typical application of flexible food packaging is the
packaging for processed meat and cheese which commonly include
three layers top film, adhesive, and sealant. For example, Table 1
below provides a typical packaging layers and their normalized
thicknesses, measured in grams/m.sup.2:
1 TABLE 1 Top film of 0.5 mil polyester type (PET): 17.0
gram/m.sup.2 Adhesive: 3.0 gram/m.sup.2 Sealant of polyethylene
copolymer: 40.0 gram/m.sup.2
[0081] Electron beam has generally been used to cure the adhesive
in between the top film and the sealant.
[0082] As illustrated in FIG. 6, EB processing device currently
available in the market, which operates at 125 kVolts, sufficiently
cured the adhesive at a depth of 20 gram/m.sup.2, curing the top
film and the adhesive. However, it deposited significant dose to
the sealant layer at a depth of 60 gram/m.sup.2 (top film,
adhesive, and sealant). The polyethylene based sealant layer, which
contacts the food being packaged, emits undesirable odors when it
absorbs the dose deposited thereon. In addition, the deposited dose
also increases the seal initiation temperatures, thus making it
difficult to heat seal. These two effects on the sealant layer
prevent the current EB processing device from meeting the demands
for flexible food packaging industry.
[0083] Processing device 100 consistent with the principles of the
present invention overcomes the problems of prior processing device
by operating at a voltage range of 110 kVolts or less, preferably
90-100 kVolts, at a commercially viable substrate feed rate. As
shown in FIG. 6, at the operating voltage of 110 kVolts or less,
one can properly cure the adhesive at a depth of 20 gram/m.sup.2,
yet impart significantly less dose, and thus cause less damage to
the sealant film.
EXAMPLE 4
[0084] The result of a fourth experiment, as shown in FIG. 7,
describes the relation between the energy absorbed by the titanium
foil as a function of its operating voltage measured in kVolts.
This study compared three different titanium foil thicknesses of
17, 12.5, and 8 micrometers. The studies on the 17 and 12.5
micrometers were performed at the National Institute of Standards
and Technology according to the electron energy dissipation in
titanium foil using MonteCarlo calculations. Based on the data
resulted from these studies, data for the 8 micrometer titanium
foil was extrapolated. This study confirms that thinner foil
absorbs less energy, especially at lower voltages. Therefore, a
processing device utilizing foil having a thickness of 10
micrometers or less solves the heat management problem since energy
absorbed by the foil converts to power resulting in heat management
issues with the foil.
[0085] Because the processing device according to the present
invention can operate at an operating voltage of 110 kVolts or
less, not only that the size of power supply to generate the
operating voltage can be reduced, but also the size of evacuated
vessel to contain the particle beam generating assembly can be
substantially reduced. Furthermore, the thickness of protective
lining can be reduced because less severe radiation is emitted by
the electrons exiting the evacuated vessel at a slower rate when
the operating voltage is 110 kVolts or less.
[0086] In application, a particle beam processing device may be
used in a manufacturing process, such as electron beam (EB)
processing, to treat a substrate or a coating exposed to the
device. The treatment may include a chemical reaction, such as
polymerization, crosslinking, or sterilization. When the substrate
or coating is exposed to highly accelerated electrons, a reaction
occurs in which the chemical bonds in the substrate or coating are
broken and a new, modified molecular structure is formed. This
application applies broadly to any particle beam, but for exemplary
purposes, the electron beam is particularly described. The
following will describe possible chemical reactions that could
occur during EB processing.
EXAMPLE 5
[0087] Crosslinking is a chemical reaction that alters and enhances
the physical characteristics of the material being treated. In a
crosslinking process, an interconnected network of chemical bonds
or links develops between large polymer chains to form a stronger
molecular structure. Application of EB processing by crosslinking
reaction includes, for example, when a plastic like substrate or
rubber substrate is treated with electrons, the large polymers in
these products develop many linking bonds. These bonds increase the
product's performance and its resistance to weakening at elevated
temperatures. FIG. 8 illustrates the crosslinking reaction on
substrate 10A as substrate 10A passes under the particle beam
processing device, schematically referred to as 100, from an
untreated state on the left area 12A, into an exposure area 14A, to
a treated state on the right area 16A.
EXAMPLE 6
[0088] Like crosslinking, polymerization is a process in which
several individual groups of molecules combine together to form one
large group called a polymer. This causes significant physical
changes in the product being treated and results in many desirable
physical characteristics such as high gloss and abrasion
resistance. For example, when exposed to accelerated electrons
during EB processing, furniture coatings and adhesives are
transformed almost instantaneously from a liquid (uncured) state
into a non-tacky (cured) solid state. FIG. 9 illustrates the
polymerization reaction on substrate 10B as substrate 10B passes
under particle beam processing device 100, from an untreated state
on the left area 12B, into an exposure area 14B, to a treated state
on the right area 16B.
EXAMPLE 7
[0089] Sterilization is a process of destroying contaminating
microorganisms by rendering them sterile or unable to reproduce. EB
sterilization occurs when electrons are directed into the
microorganisms whereby breaking the DNA chains which control
reproduction. Once a product has been sterilized, no microbial
decomposition can take place. Since electrons act as a physical
sterilizing agent rather than a chemical one, they do not change
the chemistry of the target product or leave any residual
chemicals. EB sterilization offers a number of advantages over
chemical sterilization techniques, such as those that use hydrogen
peroxide and ethylene oxide. For example, EB sterilization may be
used to sterilize medical supplies and sensitive food products as
well as their respective packaging, whereas chemical sterilization
could not be used. FIG. 10 illustrates the sterilization reaction
on substrate 10C as substrate 10C passes under particle beam
processing device, schematically referred to as 100, from an
untreated state on the left area 12C, into an exposure area 14C, to
a treated state on the right area 16B.
[0090] In recent years, application of an EB processing has
received wide acceptance in many different industries. For example,
in the packaging industry, flexible packaging has experienced a
tremendous successful growth compared to its counterpart rigid and
semi-rigid packaging, such as cans and bottles packaging. One
reason for this success over the rigid and semi-rigid packaging
alternatives is that flexible packaging offers cost and source
reduction. The particle beam processing device according to this
invention, generally referred to in the industry as an EB machine,
may be used to satisfy requirements of this industry, including to
provide a flexible packaging material that is less expensive and
meets the health and safety standards set forth by government
agencies, such as the Food and Drug Administration. Cost reduction
may be accomplished by using less raw material and employing an
improved manufacturing technique. As an additional benefit,
reducing the raw material also appreciably appeals to this industry
as environmentally friendly.
[0091] As described above in Example 3 and exemplified in Table 1,
a typical flexible packaging material currently available in the
market comes in a laminate form, which means it has a minimum of
two main layers: a top polymer film and a bottom polymer film, with
an adhesive sandwiched or laminated between the top and bottom
films. Each of the top and bottom films usually comes in the form
of continuous sheet rolled around a cylindrical core or spool. The
adhesive may be applied, for example, by squeezing it out of a
nozzle into a nip area between a pair of rollers, one for guiding
the top film, and another for the bottom film. Generally, also
laminated and protected between the top and bottom films is a
printing of the product label. The print is commonly a reversed
image of the actual label itself.
[0092] Also currently known in the industry is an application of
the particle beam processing device made according to the teaching
of this application in the pet food packaging industry. For
example, it is well known to use the EB machine of this invention
to cure or polymerize a lacquer coating on the pet food packaging
material such as multi-wall bag. Pet food packaging material is
usually constructed of a layer of high strength paper and a lacquer
coating to protect the label printed on the paper. It has been
known to cure the lacquer coating on the paper by feeding the paper
into a particle beam processing device of the present invention
normally operating at a voltage of 110 kVolts to cure the lacquer
coating, transforming the lacquer coating from a liquid phase to
solid almost instantaneously. The lacquer coating is EB cured and
designed to provide gloss, abrasion resistant and desired
coefficient of friction (COF). After the EB lacquer is applied, the
paper is further processed where other layers of paper and plastic
film are glued onto the paper containing EB lacquer making the
multi-wall bug substrate. After filling the contents, the paper
packaging is then generally sealed by sewing the top and bottom
edges of the packaging. The pet food packaging material does not
include a bottom polymer film, which is normally made of
polyethylene for heat sealing the packages when the EB lacquer is
applied and cured with EB.
[0093] It is known that if the radiation from the particle beam
processing device deposits significant dose to the bottom polymer
film, thereby altering the sealing characteristics of the bottom
polymer film, and causing the film to emit undesirable odors and
raising the seal initiation temperatures thus making it difficult
to heat seal the packages.
[0094] The present invention is directed to an application of the
particle beam processing device to a treatable material, such as
for a flexible food packaging, whereby the treatable material
includes a substrate, a particle beam treatable lacquer coating,
and a radiation labile layer, such as a sealing layer, whereby the
particle beam causes the lacquer coating to chemically react
without effecting the radiation labile layer.
[0095] Application of the particle beam processing device made
according to this invention can be found in many industries
including, for example, packaging, insulation films, reflective
coatings and reflective materials, solar films, etc. Other fields,
such as outer space suits and aircrafts, may also find this
invention useful. For exemplary purposes, an embodiment of the
present invention is discussed with respect to an application of
the particle beam processing device in the flexible food packaging
field.
[0096] Consistent with the principles of the present invention, in
order to reduce material resources and production costs of current
packaging material, this application provides a particle beam
treatable material including a substrate and a lacquer coating
applied on the substrate, the lacquer coating being formulated for
exposure to highly accelerated particles, such as those generated
by the particle beam processing device of this invention, to cause
a chemical reaction to the lacquer coating. The particle beam
processing device operates at a voltage in a range of 110 kVolts or
below.
[0097] As shown in FIG. 11, a packaging material 200 consistent
with the principles of the present invention includes a substrate
10 having a top side 212 and a bottom side 214, and a lacquer
coating 240 applied on top side 212 of substrate 10. In the
illustrated embodiment of FIG. 11, packaging material 200 is
schematically shown to go through a particle beam processing device
100 of this invention in the direction of arrow 216. Substrate 10
is generally in the form of a continuous web. However, this
invention anticipates that substrate 10 may also be in the form of
a sheet.
[0098] Lacquer coating 240, such as an over-print varnish (OPV), is
formulated for exposure to highly accelerated particles
schematically illustrated and referred to as arrows 242. Particles
242 may be electron beams such as those electrons generated by
particle beam generating assembly 110 of this invention. When
exposed to electron beams 242, lacquer coating 240 is treated by
going through a chemical reaction, i.e., a polymerization process
in which it is physically transformed from a liquid state to a
solid state (illustrated in FIG. 11 as reference number 244). This
polymerization process is commonly referred to as being a curing
process. Advantageously, lacquer coating 240 may be cured
theoretically almost instantaneously or practically within
approximately a few mili-seconds. For the manufacturers of consumer
food products, like chocolate bars, potato chips, candies, dried
fruits, etc., where mass quantity production is essential, this is
a tremendous breakthrough since packaged products can be quickly
shipped to suppliers and consumers.
[0099] Lacquer coating 240 serves several purposes, including
protecting the ink of a label print 250 from smearing and
scratching, providing traction to enable the web to run through the
EB machine, and for aesthetic reasons, presenting a high gloss
finish to the packaged product. Lacquer coating 240 may be made of
a functional group, such as acrylate ester including
multifunctional acrylates for free radical polymerization, vinyl
ethers, cycloaliphatic diepoxide and polyol systems, for cationic
polymerization. The lacquer coating may also include wefting agents
and other additives to control coefficient of friction (COF) and
import desired functional properties, such as gas and aroma barrier
properties.
[0100] For example, the following are possible candidates for the
multifunctional acrylate:
[0101] acrylated polyols with molecular weights from 150 to
600;
[0102] polyester acrylates with molecular weights from 1000 to
2000;
[0103] polyether acryiates with molecular weights from 200 to
1500;
[0104] polyester urethane acrylates with molecular weights from 400
to 2000;
[0105] polyurea acrylates with molecular weights from 400 to
2000;
[0106] epoxy acrylates with molecular weights from 300 to 1000;
and
[0107] mixtures of multifunctional acrylates.
[0108] More particularly, the multifunctional acrylate may include
pentaerythritol tetraacrylate, ditrimethylol propane tetraacrylate,
trimethylolpropane triacrylate, glycerol triacrylate, triacrylate
ester of tris-t2hydroxy-ethyll isocyanurate, hexanediol diacrylate,
and dipentaerythritol hexacrylate, and ethoxylated and propoxylated
derivatives thereof.
[0109] Lacquer coating 240 may have a normalized thickness
(expressed in terms of its mass density) in a range of 0.5-20
grams/m.sup.2. In one embodiment, lacquer coating 240 preferably
has a thickness in a range of 1-10 grams/m.sup.2, and more
preferably 2-5 grams/m.sup.2.
[0110] Also consistent with the principles of the present
invention, lacquer coating 240 is preferably treated using the EB
machine having a power supply and operating at a voltage of 110
kVolts or below. For one application, the operating voltage of the
EB machine may be in a range of 60-110 kVolts, or preferably
between 70-110 kVolts, and more preferably between 90-110
kVolts.
[0111] Furthermore, lacquer coating 240 may be treated using the EB
machine which generates electrons emitting energy in a range of
0.5-10 Mrads to cure lacquer coating 240. In one example, the
emitted electron energy is preferably in a range of 1-7 Mrads, or
preferably in a range of 2-5 Mrads.
[0112] Also consistent with the principles of the present
invention, substrate 10 may be made of a material such as
polyolefins, including oriented polypropylene (OPP), cast
polypropylene, polyethylene and polyethylene copolymer;
polystyrene; polyesters, including polyethylene terephthalate
(PET), or polyethylene naphthalate (PEN); polyolefin copolymers,
including ethylene vinyl acetate, ethylene acrylic acid and
ethylene vinyl alcohol (EVOH), polyvinylalcohol and copolymers
thereof; polyamides, including nylon, and MXD6; polyimides;
polyacrylonitrile; polyvinylchloride; polyvinyl dichloride;
polyvinylidene chloride; polyacrylates; ionomers; polysaccharides,
including regenerated cellulose; silicone, including rubbers or
sealants; natural or synthetic rubbers; glassine or clay coated
paper; paper board; craft paper; and metallized films and vapor
deposited metal oxide coated polymer films, including AlO.sub.x,
SiO.sub.x, or TiO.sub.x.
[0113] To provide desired strength to the packaging and to maintain
quality of the contents of a packaged product, substrate 10 may
have a thickness in a range of 10-200 grams/m.sup.2, preferably
30-90 grams/m.sup.2, or more preferably 50-70 grams/m.sup.2.
[0114] Further consistent with the principles of the present
invention, substrate 10 may have a barrier layer 260 applied on top
side 212 of substrate 10 to maintain a prerequisite condition of
the contents of a packaged product. If the contents of the packaged
product are foods, such as potato chips, for example, the
prerequisite condition may include flavor, freshness, taste,
crispness, color, etc.
[0115] Barrier layer 260 may be applied by a technique commonly
known as vacuum deposition process whereby a layer of, for example,
vaporized aluminum, aluminum oxides (AlO.sub.x), silicone oxides
(SiO.sub.x), or other suitable materials is deposited onto
substrate 10 to maintain the prerequisite condition of the contents
of a packaged product. In a vacuum deposition process using an
aluminum oxide, the process also known as a metallization, whereby
aluminum is heated to above melting temperature under a vacuum
condition in a chamber. A continuous web is run through the vacuum
chamber filled with molten aluminum via a series of rollers. Under
a controlled condition, the molten aluminum is deposited on either
one or both of its surfaces creating a precise thickness of
aluminum metallization on the web. This metallization can be seen,
for example, as the shiny silver-colored coating on the inner side
of a bag of potato chips. In one embodiment, barrier layer 260 may
have a thickness in a range of 100-1000 Angstroms.
[0116] Label print 250 may be applied directly on top side 212 of
substrate 10, usually, but not necessarily, on top of the barrier
layer 260. When substrate 10 includes barrier layer 260, label
print 250 may be applied after application of barrier layer 260
onto substrate 10. Label print 250 according to this invention may
be applied as a surface print, as oppose to the reverse printing.
Surface printing may be performed using the currently available
techniques, such as flexography printing, rotor gravuare printing,
offset lithography printing, spray printing, etc. Generally, in a
printing zone of the EB machine, continuous sheet of substrate 10
is run through a series of rollers (not shown) to receive the
surface printing on its top side 212 by one of those printing
techniques. Preferably, in the flexible packaging industry,
printing is done by a flexography method. Label print 250 may be
any types of well known flexography inks, including solvent based,
water based, and electron beam curable ink, such as Unicure.TM.
available from Sun Chemicals Ink of Northlake, Ill. This invention
further anticipates that lacquer coating 240 and label print 250 on
substrate 10 may be simultaneously treated when they pass through
the particle beam processing device 100.
[0117] Yet further consistent with the principles of the present
invention, substrate 10 may have a radiation labile layer defined
as a layer of material susceptible to radiation damage. Radiation
labile layer may be a sealing layer 270, applied on bottom side 214
of substrate 10. Sealing layer 270 is provided to facilitate
sealing of the packaging material and to give structure to the
packaging without being chemically altered by the radiation from
the particle beam processing device 100. To give structure to the
packaging, sealing layer 270 may be provided with a thickness in a
range of 5-50 grams/m.sup.2, preferably 8-35 grams/m.sup.2, more
preferably 12-25 grams/m.sup.2, or most preferably 15-20
grams/m.sup.2. Sealing layer 270 may be applied to bottom side 214
of flexible substrate 210 by any conventional means, such as an
extrusion method.
[0118] In a consumer food producing company, after lacquer coating
240 has been treated, substrate 10, commonly in a form of a
continuous web, goes through a cutting process whereby the
continuous sheet is first folded to become a continuous tube, then
cut to size to make individual bags, arranged in an assembly line
to be sealed on one end of the bags. In the cutting process,
continuous sheet of substrate 10 may be run through various rollers
to make a continuous U-shaped sheet so that sealing layers 270 are
on two inner legs of the U-shaped sheet facing each other. The tips
of the legs of the U-shaped sheet may then be sealed to make the
continuous tube ready for cutting to individual bag sizes. Then,
the assembly line of individual bags goes through a filling process
whereby contents of the packaging are filled into the individual
bags, and each of the individual bags is sealed on the other end to
close the packaging. It is also possible to provide substrate 10 in
a form of individual sheets, either already cut to size or ready to
be cut to size.
[0119] Sealing layer 270 may be made of a material suitable for
sealing a packaged product, such as by heat sealing, cold sealing,
or other equivalent sealing processes. When sealing layer 270 is
provided for heat seal layer, sealing layer 270 may be made of
polymers preferably having a melting point at a temperature range
of 100-150 degrees Celcius. Examples of such polymers are
polyethylene, polyvinylacetate, ethylene propylene copolymer,
terpolymer ethylene acrylic acid, metallocene, ionomer, and
combination thereof. For bagging snack foods, like potato chips,
for example, sealing layer 270 may be made of polyethylene or
polyethylene/polypropylene copolymer terploymer having a melting
temperature range of 110-140 degrees Celcius.
[0120] Alternatively, sealing layer 270 may be provided for cold
seal layer to cold seal the packaging. In one embodiment, a cold
seal adhesive may be applied to the substrate. For cold seal
coating, sealing layer 270 may be made of natural rubber,
polyamides, and combination thereof.
[0121] The following comparative examples present several
applications of the web packaging material according to the present
invention in the current market, including stand-up pouch
packaging, confectionary packaging, and snack food packaging. As
can be seen from the following examples, the web packaging material
of the present invention improves the currently available packaging
material by offering cost savings, better quality product, and
environmental consciousness. The present invention accomplishes
these improvements by using less raw material and using a low
voltage EB machine to cure the packaging material. For exemplary
purposes, Examples 8-10 discuss the polymers in terms of their
normalized thickness measured in grams/m.sup.2.
EXAMPLE 8
STAND-UP POUCH PACKAGING
[0122] Stand-up pouch packaging is used to package, for example,
cookies, nuts, dried fruits, etc. In today's market, packaging for
stand-up pouches is made in a laminate form, i.e., at least two
layers of polymers being laminated to sandwich an adhesive layer.
The following is an example of stand-up pouch packaging in the
current market:
2 Polymer Laminates Thickness in Current Market (in grams/m.sup.2)
Polyester type (PET) 16 Reverse printing -- Adhesive (extruded
polyethylene) 12 Metallized oriented polypropylene (OPP) 15
Adhesive (extruded polyethylene) 12 Low density polyethylene 30
Total 85
[0123] A packaging material made consistent with the principles of
the present invention may have the following construction for a
stand-up pouch packaging:
3 Packaging Material Thickness of the Present Invention (in
grams/m.sup.2) Over-print varnish (OPV) <5 Surface printing --
Metallized oriented polypropylene (OPP) 50 Extruded polyethylene
(PE) coating 20 Total <75
[0124] In the exemplified embodiment, over-print varnish of lacquer
coating 240 is about 3-5 grams/m.sup.2 thick and is curable with an
EB machine at least 2.0 Mrads and operating at a range of 80-110
kVolts. It can be seen that the web packaging made according with
the principles of the present invention uses less raw material than
the conventional stand-up pouch packaging by about 10
grams/m.sup.2, which is a raw material saving of almost 15-20%. In
addition, the web packaging made according with the principles of
the present invention offers energy and cost savings related to
reducing several operating or processing steps.
EXAMPLE 9
CONFECTIONARY PACKAGING
[0125] Confectionary packaging is used to package, for example,
candies and candied products. The following is an example of
confectionary packaging in the current market:
4 Polymer Laminates Thickness in Current Market (in grams/m.sup.2)
Oriented polypropylene (OPP) 18 Reverse printing -- Water-based
adhesive 2 Oriented polypropylene (OPP) 28 Cold seal adhesive
pattern coated -- Total 48
[0126] A packaging material made consistent with the principles of
the present invention may have the following construction for a
confectionary packaging:
5 Packaging Material Thickness of the Present Invention (in
grams/m.sup.2) Over-print varnish (OPV) <5 Surface printing --
Oriented polypropylene (OPP) 35 Cold seal adhesive pattern coated
-- Total <40
[0127] In this example, over-print varnish of lacquer coating 240
is curable with an EB machine at least 2.0 Mrads and operating at a
range of 80-110 kVolts. It can be seen that the web packaging made
according with the principles of the present invention uses less
raw material than the conventional packaging, a material cost
saving of about 8 grams/m.sup.2 or 10-15%. In addition, the web
packaging made according with the principles of the present
invention offers energy and cost savings related to reducing
several operating or processing steps.
EXAMPLE 10
SNACK FOOD PACKAGING
[0128] Snack food packaging is used to package, for example, potato
chips, corn chips, and pretzels. The following is an example of
snack food packaging in the current market:
6 Polymer Laminates Thickness in Current Market (in grams/m.sup.2)
Oriented polypropylene (OPP) 18 Reverse printing -- Adhesive
(extruded polyethylene) 15 Metallized heat sealable OPP 18 Total
51
[0129] A packaging material made consistent with the principles of
the present invention may have the following construction for a
snack food packaging:
7 Packaging Material Thickness of the Present Invention (in
grams/m.sup.2) Over-print varnish (OPV) <5 Surface printing --
Metallized oriented polypropylene (OPP) 18 Extruded PE for heat
sealing and bulk 18 Total <41
[0130] In this example, over-print varnish of lacquer coating 240
is also curable with an EB machine at 2.0 Mrads and operating at a
range of 80-110 kVolts. It can be seen that the web packaging made
according with the principles of the present invention uses less
raw material than the conventional packaging, a cost saving of
about 10 grams/m.sup.2 or 15%. In addition, the web packaging cured
with the EB machine according with the principles of the present
invention offers substantial energy savings as compared with the
conventional oven operation used in the current market.
[0131] The process described above offers several advantages, such
as, the particle beam processing happens virtually instantaneously,
commonly operates at room temperature and produces no emissions or
air pollution since particle beam coating materials are 100%
solids. In addition, the coatings do not contain harmful solvents
or volatile organic compounds. In addition, energy costs to operate
EB is substantially lower than operating ovens used today.
[0132] It will be apparent to those skilled in the art that various
modifications and variations can be made in the particle generating
assembly, foil support, processing zone, and process control
system, as well as the materials chosen for the web packaging
material, and the materials chosen for the thin foil, the filaments
or particle generating components, and in construction of the
particle beam processing system as well as other aspects of the
invention without departing from the scope or spirit of the
invention.
[0133] Other embodiments of the invention will be apparent to those
skilled in the art from consideration of the specification and
practice of the invention disclosed herein. It is intended that the
specification and examples be considered as exemplary only, with a
true scope and spirit of the invention being indicated by the
following claims and their equivalents.
* * * * *