U.S. patent application number 10/091302 was filed with the patent office on 2002-11-14 for manufacturing method of a semiconductor device.
This patent application is currently assigned to Hitachi, Ltd.. Invention is credited to Shimanuki, Yoshihiko, Suzuki, Masayuki.
Application Number | 20020168796 10/091302 |
Document ID | / |
Family ID | 26615000 |
Filed Date | 2002-11-14 |
United States Patent
Application |
20020168796 |
Kind Code |
A1 |
Shimanuki, Yoshihiko ; et
al. |
November 14, 2002 |
Manufacturing method of a semiconductor device
Abstract
A non-leaded resin-sealed semiconductor device is manufactured
by the steps of providing a conductive flat substrate (metal plate)
of copper plate or the like, fixing semiconductor elements
respectively to predetermined positions on the principal surface of
the substrate by an insulating adhesive, electrically connecting
electrodes on the surfaces of the semiconductor elements with
predetermined partition parts of the substrate separate from the
semiconductor elements by conductive wires, forming an insulating
resin layer on the principal surface of the substrate to cover the
semiconductor elements and wires, selectively removing the
substrate from the rear of said substrate to form electrically
independent partition parts whereof at least some are external
electrode terminals, and selectively removing said resin layer to
fragment the device into regions containing the semiconductor
elements and the plural partition parts around the semiconductor
elements. Thus, there is provided a compact non-leaded
semiconductor device having a large number of electrode
terminals.
Inventors: |
Shimanuki, Yoshihiko;
(Nanyo, JP) ; Suzuki, Masayuki; (Nanyo,
JP) |
Correspondence
Address: |
Stanley P. Fisher
Reed Smith LLP
Suite 1400
3110 Fairview Park Drive
Falls Church
VA
22042-4503
US
|
Assignee: |
Hitachi, Ltd.
|
Family ID: |
26615000 |
Appl. No.: |
10/091302 |
Filed: |
March 6, 2002 |
Current U.S.
Class: |
438/106 ;
257/E23.124 |
Current CPC
Class: |
H01L 2224/29007
20130101; H01L 2924/0132 20130101; H01L 2224/97 20130101; H01L
2924/01029 20130101; H01L 2224/48257 20130101; H01L 2224/85464
20130101; H01L 2224/92247 20130101; H01L 2224/97 20130101; H01L
2924/01005 20130101; H01L 2224/48091 20130101; H01L 2224/97
20130101; H01L 2224/05554 20130101; H01L 2924/181 20130101; H01L
2224/92247 20130101; H01L 2224/48091 20130101; H01L 2224/97
20130101; H01L 2924/1815 20130101; H01L 2224/29111 20130101; H01L
2224/48639 20130101; H01L 2924/01083 20130101; H01L 2924/181
20130101; H01L 2224/73265 20130101; H01L 2224/92247 20130101; H01L
2924/12042 20130101; H01L 2924/3512 20130101; H01L 2924/01079
20130101; H01L 2224/48639 20130101; H01L 2224/48644 20130101; H01L
24/32 20130101; H01L 2224/92247 20130101; H01L 2924/0132 20130101;
H01L 21/4832 20130101; H01L 23/3107 20130101; H01L 2224/85444
20130101; H01L 2924/01006 20130101; H01L 2924/181 20130101; H01L
2224/32245 20130101; H01L 2224/73265 20130101; H01L 2224/48257
20130101; H01L 2924/00012 20130101; H01L 2924/00012 20130101; H01L
2924/01026 20130101; H01L 2924/00 20130101; H01L 2224/83 20130101;
H01L 2224/32245 20130101; H01L 2224/32245 20130101; H01L 2224/32245
20130101; H01L 2924/00 20130101; H01L 2924/00 20130101; H01L
2924/00012 20130101; H01L 2924/00012 20130101; H01L 2924/00
20130101; H01L 2224/48247 20130101; H01L 2224/73265 20130101; H01L
2224/48257 20130101; H01L 2224/49433 20130101; H01L 2924/00012
20130101; H01L 2224/73265 20130101; H01L 2924/00012 20130101; H01L
2924/00012 20130101; H01L 2924/01082 20130101; H01L 2924/00014
20130101; H01L 2924/00014 20130101; H01L 2224/32245 20130101; H01L
2224/32245 20130101; H01L 2224/85 20130101; H01L 2924/01082
20130101; H01L 2224/48247 20130101; H01L 2924/00014 20130101; H01L
2224/73265 20130101; H01L 2224/48247 20130101; H01L 2224/32245
20130101; H01L 2224/48247 20130101; H01L 2224/48257 20130101; H01L
2224/48257 20130101; H01L 2924/00012 20130101; H01L 2924/00012
20130101; H01L 2924/01028 20130101; H01L 2224/49433 20130101; H01L
2924/14 20130101; H01L 2924/014 20130101; H01L 2224/45144 20130101;
H01L 2224/32014 20130101; H01L 2224/73265 20130101; H01L 2224/97
20130101; H01L 21/561 20130101; H01L 2224/48247 20130101; H01L
2224/48664 20130101; H01L 2924/01078 20130101; H01L 2924/07802
20130101; H01L 2924/00012 20130101; H01L 24/45 20130101; H01L
2224/48247 20130101; H01L 2924/00 20130101; H01L 2924/0105
20130101; H01L 2924/00 20130101; H01L 2224/73265 20130101; H01L
2224/48257 20130101; H01L 2224/32245 20130101; H01L 2924/01028
20130101; H01L 2224/73265 20130101; H01L 2924/00 20130101; H01L
2924/00012 20130101; H01L 2924/00014 20130101; H01L 24/48 20130101;
H01L 24/73 20130101; H01L 2924/01047 20130101; H01L 2924/12042
20130101; H01L 24/97 20130101; H01L 2224/73265 20130101; H01L
2224/97 20130101; H01L 2924/01019 20130101; H01L 2924/0132
20130101; H01L 2924/07802 20130101; H01L 2224/45144 20130101; H01L
2224/49171 20130101; H01L 2224/48644 20130101; H01L 2224/49171
20130101; H01L 2224/49171 20130101; H01L 2224/97 20130101; H01L
2224/29111 20130101; H01L 2224/32245 20130101; H01L 2224/49113
20130101; H01L 2224/85439 20130101; H01L 2224/29139 20130101; H01L
2224/48664 20130101; H01L 2924/3025 20130101; H01L 2221/68377
20130101; H01L 2224/29139 20130101; H01L 2224/73265 20130101; H01L
24/49 20130101 |
Class at
Publication: |
438/106 |
International
Class: |
H01L 021/44 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 11, 2002 |
JP |
2002-004435 |
May 11, 2001 |
JP |
2001-142164 |
Claims
What is claimed is:
1. A method of manufacturing a semiconductor device, comprising the
steps of: providing a conductive flat substrate, fixing
semiconductor elements respectively to plural predetermined parts
of a principal surface of said substrate, electrically connecting
electrodes on the surface of said semiconductor elements with
predetermined partition parts of said substrate around said
semiconductor element by conductive wires, respectively, forming an
insulating resin layer on a principal surface of said substrate to
cover said semiconductor elements and said wires, selectively
removing said substrate from the rear of said substrate to form
electrically independent partition parts whereof at least some are
external electrode terminals, and selectively removing said resin
layer to fragment said device into regions containing said
semiconductor elements and said plural partition parts around said
semiconductor elements.
2. The method of manufacturing a semiconductor device according to
claim 1, wherein said partition parts are formed by selectively
removing said substrate to provide a checkered pattern of grooves
in said substrate which divide said substrate.
3. The method of manufacturing a semiconductor device according to
claim 2, wherein said grooves are formed also at the rear of the
substrate region where said semiconductor elements were fixed.
4. The method of manufacturing a semiconductor device according to
claim 1, wherein said semiconductor elements are fixed to said
substrate by an insulating adhesive.
5. The method of manufacturing a semiconductor device according to
claim 1, wherein, in the step which selectively removes said
substrate, the substrate in the region where said semiconductor
elements were fixed, is not removed.
6. The method of manufacturing a semiconductor device according to
claim 1, wherein said fragmentation is performed by splitting said
resin layer into regions comprising plural semiconductor elements
and plural external electrode terminals.
7. The method of manufacturing a semiconductor device according to
claim 1, wherein the selective removal of said substrate is
performed by etching.
8. The method of manufacturing a semiconductor device according to
claim 1, wherein the selective removal of said substrate is
performed by cutting by means of dicing.
9. The method of manufacturing a semiconductor device according to
claim 1, wherein the selective removal of said substrate is
performed by melt cutting by means of laser beam irradiation.
10. The method of manufacturing a semiconductor device according to
claim 1, wherein, after forming the resin layer on the principal
surface of said substrate, a tape is affixed to the surface of said
resin layer, said partition parts are formed and said fragmentation
is performed, and the tape is then peeled off.
11. The method of manufacturing a semiconductor device according to
claim 1, wherein said fragmentation is performed by cutting by
means of dicing.
12. The method of manufacturing a semiconductor device according to
claim 1, wherein said fragmentation is performed by melt cutting by
means of laser beam irradiation.
13. The method of manufacturing a semiconductor device according to
claim 1, wherein said resin layer is formed by transfer
molding.
14. The method of manufacturing-a semiconductor device according to
claim 1 wherein, after electrically connecting, by means of
conductive wires, regions which function as said external electrode
terminals separate from the region wherein said semiconductor
elements are fixed, to the predetermined partition parts wherein
said semiconductor elements are fixed, the semiconductor elements
are fixed to the substrate by insulating adhesive to enclose a part
of said wires and form said external electrode terminals also
underneath said semiconductor elements.
15. The method of manufacturing a semiconductor device according to
claim 14, wherein the partition parts underneath the semiconductor
elements to which said wires are connected, and other partition
parts underneath said semiconductor elements, are connected by
conductive wires.
16. The method of manufacturing a semiconductor device according to
claim 1, wherein the selective removal of said substrate is brought
up to the surface of said resin layer.
17. The method of manufacturing a semiconductor device according to
claim 1, wherein the selective removal of said substrate is
performed so that the adhesive which fixes said semiconductor
elements to said substrate is not penetrated.
18. The method of manufacturing a semiconductor device according to
claim 1, wherein a bonding strength enhancement is given to a
principal surface of said substrate so that the principal surface
of said substrate bonds firmly to said resin layer.
19. The method of manufacturing a semiconductor device according to
claim 1, wherein two or more rows of said external electrode
terminals are arranged along an edge of said resin layer.
20. The method of manufacturing a semiconductor device according to
claim 2, wherein through holes are provided at intersection points
which divide said substrate transversely and longitudinally.
21. A method of manufacturing a semiconductor device, comprising
the steps of: forming plural, mutually independent partition parts
by providing plural grooves on one surface of a flat conductive
substrate so that plural unit substrate parts are formed by the
plural partition parts, fixing semiconductor elements to
predetermined positions of the unit substrate parts on a surface of
said substrate where said grooves are present and a surface of said
substrate where said grooves are not present, electrically
connecting, by means of conductive wires, electrodes on the
surfaces of said semiconductor elements with predetermined
partition parts or rear surface regions of said partition parts of
the unit substrate parts to which said semiconductor elements are
fixed, forming an insulating resin layer over effectively the whole
region of the substrate surface to which said semiconductor
elements and said wires are connected so as to cover said
semiconductor elements and said wires, removing the substrate parts
of the groove bases to electrically isolate said partition parts,
so that at least some of the partition parts form external
electrode terminals which are regions to which said wires are
connected, and selectively removing said resin layer to perform
fragmentation into said unit substrate parts.
22. The method of manufacturing a semiconductor device according to
claim 21, wherein said partition parts are formed by providing a
checkered pattern of said grooves on said substrate surface.
23. The method of manufacturing a semiconductor device according to
claim 21, wherein said grooves are provided also in the substrate
region in which said semiconductor elements are fixed or a rear
surface region of the substrate region in which said semiconductor
elements are fixed.
24. The method of manufacturing a semiconductor device according to
claim 21, wherein said semiconductor elements are fixed to said
substrate by an insulating adhesive.
25. The method of manufacturing a semiconductor device according to
claim 21, wherein said semiconductor elements are fixed to a single
partition part by selectively forming a pattern of said
grooves.
26. The method of manufacturing a semiconductor device according to
claim 21, wherein, in the manufacturing method wherein
semiconductor elements are fixed to a surface in which said grooves
are not present, the rear surface side of said substrate is removed
by etching to a predetermined thickness so that the thickness of
the substrate of said partition part which supports the middle
parts of said semiconductor elements is thinner than the thickness
of the substrate of said partition part which supports the
peripheral part of said semiconductor elements.
27. The method of manufacturing a semiconductor device according to
claim 21, wherein the peripheral parts of said semiconductor
elements are supported by some of said partition parts, and through
holes are formed in said unit substrate parts so that the partition
parts are not present in the middle parts of said semiconductor
elements.
28. The method of manufacturing a semiconductor device according to
claim 21, wherein in removing said groove bases, said grooves are
selected to electrically isolate each of said plural partition
parts.
29. The method of manufacturing a semiconductor device according to
claim 21, wherein said fragmentation is performed by dividing said
resin layer into regions comprising said plural semiconductor
elements and plural external electrode terminals.
30. The method of manufacturing a semiconductor device according to
claim 21, wherein the removal of said groove bases for electrically
isolating said partition parts is performed by any of etching,
dicing and laser beam irradiation.
31. The method of manufacturing a semiconductor device according to
claim 21, wherein, in the manufacture of the semiconductor device
which fixes semiconductor elements to the surface where grooves are
present, the removal of said groove bases for electrically
isolating said partition parts is performed by polishing the
surface where grooves are not present to a predetermined
thickness.
32. The method of manufacturing a semiconductor device according to
claim 21, wherein, after forming a resin layer on a principal
surface of said substrate, a tape is affixed to the surface of said
resin layer, said partition parts are formed and fragmentation is
performed, and the tape is then peeled off.
33. The method of manufacturing a semiconductor device according to
claim 21, wherein said fragmentation is performed by dicing or
laser beam irradiation.
34. The method of manufacturing a semiconductor device according to
claim 21, wherein said resin layer is formed by transfer
molding.
35. The method of manufacturing a semiconductor device according to
claim 21 wherein, on the side where the semiconductor elements of
said substrate are fixed, regions which are external electrode
terminals separate from the region where said semiconductor
elements are fixed, and said partition parts adjacent to these
external electrodes to which said semiconductor elements are fixed,
are connected by conductive wires or substrate parts so as to form
external electrode terminals also underneath said semiconductor
elements.
36. The method of manufacturing a semiconductor device according to
claim 21 wherein, when the groove bases are removed, the front
surfaces of said semiconductor elements are not removed.
37. The method of manufacturing a semiconductor device according to
claim 21, wherein a bonding strength enhancement is applied to the
principal surface of said substrate such that the principal surface
of said substrate is strongly bonded to said resin layer.
38. The method of manufacturing a semiconductor device according to
claim 21, wherein said external electrode terminals are arranged in
two or more rows along an edge of said resin layer.
39. The method of manufacturing a semiconductor device according to
claim 21, wherein through holes are provided at intersection points
which divide said substrate transversely and longitudinally.
40. The method of manufacturing a semiconductor device according to
claim 21, wherein said semiconductor elements are fixed to said
substrate so that one side of said semiconductor elements
intersects with said grooves.
41. The method of manufacturing a semiconductor device according to
claim 21, wherein, in the method of manufacturing a semiconductor
device in which said semiconductor elements are fixed to the
surface in which grooves are not present, the groove bases are
removed by cutting with a dicing blade having a larger width than
the groove width or a dicing blade having a narrower width than the
groove width.
42. The method of manufacturing a semiconductor device according to
claim 21, wherein, in the method of manufacturing a semiconductor
device in which said semiconductor elements are fixed to the
surface in which grooves are present, said grooves in the region
where said semiconductor elements are fixed, are filled with a
filling substance, and said semiconductor elements are then fixed
to said substrate using said adhesive such that there is no gap
between said semiconductor elements and said substrate.
43. The method of manufacturing a semiconductor device according to
claim 1, wherein said plural grooves are provided facing each other
on the front and rear surfaces of the flat substrate.
44. The method of manufacturing a semiconductor device according to
claim 43, wherein, in the step for selectively removing said
substrate, the bases of said facing grooves are removed from the
rear surface of said substrate so as to electrically isolate said
partition parts.
45. A method of manufacturing a semiconductor device, comprising
the steps of: providing a conductive substrate having plural unit
substrate parts, said plural unit substrate parts respectively
comprising rectangular tabs and plural leads connected via said
tabs which respectively comprise plural wire connecting regions,
fixing semiconductor elements respectively to said tabs on the
principal surface side of said substrate via an adhesive,
electrically connecting the electrodes on the front surfaces of
said semiconductor elements and said predetermined wire connecting
regions of said leads respectively by conductive wires, forming an
insulating resin layer on the principal surface of said substrate
to cover said semiconductor elements and said wires, selectively
removing said leads over the whole length of the lead width to
electrically isolate said tabs, leads of adjacent unit substrate
parts and adjacent wire connecting regions so as to form external
electrode terminals, and selectively removing said resin layer to
fragment it into unit substrate regions comprising said unit
substrate parts.
46. The method of manufacturing a semiconductor device according to
claim 45, wherein after forming the resin layer on the principal
surface of said substrate, a tape is affixed to the whole of the
front surface of said resin layer, said leads are selectively
removed and said fragmentation is performed, and the tape is then
peeled off.
47. The method of manufacturing a semiconductor device according to
claim 45, wherein said unit substrate regions are aligned in the
transverse and longitudinal directions of said substrate.
48. The method of manufacturing a semiconductor device according to
claim 45, wherein said semiconductor elements are connected over
part of the leads which extend from said tabs.
49. The method of manufacturing a semiconductor device according to
claim 45, wherein the middles of said leads are curved one step
higher so that said tabs are one step higher than the lead
surfaces, said semiconductor elements are fixed to said high tab
surfaces, and a resin layer is formed also underneath said tabs and
when said resin layer is formed.
50. The method of manufacturing a semiconductor device according to
claim 45, wherein the selective removal of said leads is performed
by any of etching , dicing and laser beam irradiation.
51. The method of manufacturing a semiconductor device according to
claim 45, wherein said fragmentation is performed by cutting by
means of dicing.
52. The method of manufacturing a semiconductor device according to
claim 45, wherein said resin layer is formed by transfer
molding.
53. The method of manufacturing a semiconductor device according to
claim 52, wherein transfer molding is performed by bonding tab
surfaces to which said semiconductor elements of said substrate are
not fixed, to a mold die surface by vacuum suction.
54. The method of manufacturing a semiconductor device according to
claim 52, wherein the selective removal of the said leads is
brought up to the surface layer of the resin layer.
55. The method of manufacturing a semiconductor device according to
claim 45, wherein said external electrode terminals are arranged in
two or more rows along an edge of said resin layer.
56. The method of manufacturing a semiconductor device according to
claim 45, wherein the tab surfaces to which said semiconductor
elements are not fixed are formed thinner than said leads by
etching to a predetermined thickness, and when said resin layer is
formed, the resin layer is formed also on the tab surfaces to which
said semiconductor elements are not fixed.
57. The method of manufacturing a semiconductor device according to
claim 45, wherein, when said conductive substrate is patterned,
both edges are joined via said substrate frame or said leads in an
extension region in the corner direction of said tabs in the unit
substrate regions or said tabs, directly or via supporting pieces,
and plural corner leads are formed having plural wire connecting
regions in its length direction, the wires connected to the
electrode of the semiconductor elements are connected also to the
wire connecting regions of said corner leads, and wherein when the
leads are selectively removed, the wire connecting regions of the
corner leads are cut and said supporting pieces are removed.
58. The method of manufacturing a semiconductor device according to
claim 45, wherein the parts of said leads which are selectively
removed are situated on straight lines running in the transverse
and longitudinal directions of said substrate, and removed by
dicing.
59. The method of manufacturing a semiconductor device according to
claim 57, wherein the parts of said leads which are selectively
removed and said supporting pieces are situated on straight lines
running in the transverse and longitudinal directions of said
substrate.
60. The method of manufacturing a semiconductor device according to
claim 45, wherein, when said leads are selectively removed, the
front surfaces of said semiconductor elements are not removed.
61. The method of manufacturing a semiconductor device according to
claim 45, wherein bonding strength enhancement is applied to the
adhesive surfaces of the remaining leads such that the bonding
between the remaining lead parts connected to the resin layer and
said resin layer, is enhanced.
62. A method of manufacturing a semiconductor device, comprising
the steps of: providing a conductive substrate having plural
grooves formed in one surface, plural partition parts separated by
said grooves and unit substrate parts formed by said plural
partition parts, fixing semiconductor elements to a predetermined
partition part or over plural partition parts of said unit
substrate parts, electrically connecting, by means of conductive
wires, the electrodes on the surfaces of said semiconductor
elements and said partition parts surrounding said semiconductor
elements, forming an insulating resin layer on one surface of said
substrate to which said semiconductor elements and said wires are
connected in order to cover said semiconductor elements and said
wires, removing the substrate parts of said groove bases to
electrically isolate said partition parts, and in at least some
partition parts, form external electrode terminals which are
regions wherein said wires are connected, forming a plating film on
the front surfaces of said external electrode terminals projecting
from said resin layer so that the front surfaces of said external
electrode terminals project more than the front surface of said
resin layer, and selectively remove said resin layer to perform
fragmentation into said unit substrate parts.
63. The method of manufacturing a semiconductor device according to
claim 62, wherein said plating film is formed by said plating
method.
64. The method of manufacturing a semiconductor device according to
claim 62, wherein the removal of the substrate parts of said groove
bases is performed by etching, and said etching is performed so
that part of the new substrate front surface exposed by said
etching projects further outside than the front surface of said
resin layer.
65. The method of manufacturing a semiconductor device according to
claim 62, wherein, when the substrate parts of said groove bases
are removed, the frame part comprising the entire circumference of
said substrate and said plural partition parts are separated.
66. The method of manufacturing a semiconductor device according to
claim 65, wherein said partition parts are formed by providing said
grooves in the transverse and longitudinal directions of said
substrate surface, said fragmentation is performed by cutting by
the dicing of said resin layer, and in said cutting step, said
substrate is not cut in the outer periphery of said semiconductor
device.
67. The method of manufacturing a semiconductor device according to
claim 62, wherein said external electrode terminals are aligned
transversely and longitudinally, and the shape of said external
electrode terminals is such that the gap between slanting external
electrode terminals is larger than the transverse-longitudinal
intervals of adjacent external electrode terminals.
68. The method of manufacturing a semiconductor device according to
claim 67, wherein said external electrode terminals are
circular.
69. The method of manufacturing a semiconductor device according to
claim 62, wherein said semiconductor elements are fixed to a single
partition part wherein the fixing surface is a flat surface, and
the rear surface of said partition part is also a flat surface.
70. The method of manufacturing a semiconductor device according to
claim 62, wherein said semiconductor elements are fixed to a single
partition part wherein the fixing surface is a flat surface, and
the rear surface of said partition part is hollowed excepting for
its edge.
71. The method of manufacturing a semiconductor device according to
claim 62, wherein a direction identifying part is provided on one
of the edges of the single partition part to which said
semiconductor elements are fixed.
72. The method of manufacturing a semiconductor device according to
claim 62, wherein the single partition part to which said
semiconductor elements are fixed, is smaller than said
semiconductor elements.
73. The method of manufacturing a semiconductor device according to
claim 62, wherein said semiconductor elements are fixed to said
substrate by an insulating adhesive.
74. The method of manufacturing a semiconductor device according to
claim 62, wherein said partition parts to which said semiconductor
elements are fixed, is thinner than the other partition parts, and
are covered by said resin layer.
75. The method of manufacturing a semiconductor device according to
claim 62, wherein said grooves are grooves formed by wet
etching.
76. The method of manufacturing a semiconductor device according to
claim 62, wherein, after forming the resin layer on the principal
surface of said substrate, a tape is affixed to the whole surface
of said resin layer, said partition parts are formed and
fragmentation is performed, and said tape is peeled off.
77. The method of manufacturing a semiconductor device according to
claim 21, wherein said resin layer is formed by transfer
molding.
78. The method of manufacturing a semiconductor device according to
claim 62, wherein said external electrode terminals are arranged in
two or more rows along an edge of said resin layer.
79. The method of manufacturing a semiconductor device according to
claim 62, wherein plural grooves facing each other are provided on
the front and rear surfaces of said flat substrate.
80. The method of manufacturing a semiconductor device according to
claim 79, wherein, in the step for selectively removing the
substrate, the bases of said facing grooves is removed from the
rear side of said substrate so as to electrically isolate said
partition parts.
Description
BACKGROUND OF THE INVENTION
[0001] This invention relates to a method of manufacturing a
semiconductor device such as a resin-sealed LSI (large-scale
integrated circuit) using a metal substrate, and in particular to
an effective technique which can be applied to the manufacture of a
semiconductor device (non-leaded semiconductor device) wherein
external electrode terminals are made to project from a mounting
surface without deliberately making the external electrode
terminals project from the side of the package, such as in a SON
(Small Outline Non-Leaded Package) or QFN (Quad Flat Non-Leaded
Package).
[0002] In the manufacture of resin-sealed semiconductor devices, a
lead frame is used. The lead frame is manufactured by forming a
predetermined pattern, by stamping a metal plate with a precision
press or by etching. The lead frame comprises supporting members
known as tabs or diepads for fixing semiconductor elements
(semiconductor chips), and plural leads whereof the ends (inner
ends) are brought to the periphery of the supporting members. The
tabs are supported by hanging leads extending from the frame part
of the lead frame.
[0003] When a resin-sealed semiconductor device is manufactured
using this lead frame, semiconductor chips are fixed to the tabs of
the lead frame, the electrodes of the semiconductor chips and ends
of the leads are connected by conductive wires, the inner end side
including the wires and semiconductor chips is sealed by an
insulating resin to fill the gaps and form a sealing package (resin
sealing package), unnecessary lead frame parts are removed by
cutting, and the leads projecting from the package or hanging from
the tabs are cut.
[0004] As one type of resin-sealed semiconductor device
manufactured by lead frames, a semiconductor device structure
(non-leaded semiconductor device) is known wherein one-side molding
is performed on one surface (principal surface) of the lead frame
to form the package, and the leads which are external electrode
terminals are exposed on the surface of the package. Examples of
this type of semiconductor device are SON wherein the leads are
exposed on both edges of the surface of the package, and QFN
wherein the leads are exposed on four sides of the surface of a
rectangular package.
[0005] In Japanese Unexamined Patent Publication No. 2000-286376, a
method is described for manufacturing a non-leaded semiconductor
device using a lead frame wherein leads are suspended respectively
from the four corners of a rectangular island, adjacent hanging
leads are joined to surround the island to form a connecting
member, first connecting pieces are made to project at equal
intervals towards the island from the inside of the surrounding
connecting member, and second connecting pieces are made to project
from the connecting member to the outside. The first connecting
pieces and second connecting pieces are in a staggered footprint
arrangement.
[0006] In the manufacture of semiconductor devices using this
frame, a semiconductor chip is fixed to the island, a bonding pad
on the front surface of the semiconductor chip is fixed to the
first connecting pieces and second connecting pieces via metal
filaments, the semiconductor chip and metal filaments are covered
by a sealing package, the first connecting pieces and second
connecting pieces are cut by dicing so as to remove the connecting
member along the connecting member, the grooves are filled by resin
if necessary, and the frame and sealing package are cut (full cut).
This gives a non-leaded semiconductor device. The island may be
formed larger or smaller than the chip.
[0007] In Japanese Unexamined Patent Publication No. 2000-216280, a
technique is disclosed for manufacturing a non-leaded semiconductor
device using a terminal land frame the wherein land structures
projecting from one side of a frame body are arranged in a
checkered pattern. The land structures are formed by forming
projections by stamping the frame body, cutout step parts are
broken off by applying a shear force in the stamping direction, and
the land structures are separated from the frame body.
[0008] Groove parts are formed on the front surface of the
projecting surface of the land structures, and projecting parts
having a flat front surface are formed in the centers of
depressions in the land structures. The flat surfaces of these
projections form mounting surfaces for external electrode terminals
of the semiconductor device. Further, a sealing resin is inlaid
into the groove parts to improve the contact between the land
structures forming the external electrode terminals and the
resin.
[0009] In semiconductor devices using this terminal land frame,
semiconductor elements are bonded to the projecting surfaces of one
or more land structures by a conductive adhesive or insulating
paste, the electrodes of the semiconductor elements and the land
structures situated around the semiconductor elements are
electrically connected by metal filaments, the principal surface of
the terminal land frame is sealed by resin (one-side molding) so
that the semiconductor elements and metal filaments are covered by
a resin layer, resin layer parts are cut at predetermined positions
to separate them, and with the terminal land frame fixed, the land
structures are pressed out from the rear surface of the terminal
land frame to break the land structures in the step parts. This
gives a non-leaded semiconductor device.
SUMMARY OF THE INVENTION
[0010] From the viewpoint of compactness of the semiconductor
device and preventing bending of leads which are the external
electrode terminals, non-leaded semiconductor devices such as SON
or QFN with one-side molding are used. In non-leaded semiconductor
devices, the lead surfaces exposed on one surface of the package
are mounting surfaces, so the mounting surface area is smaller than
in the case of semiconductor devices such as SOP (Small Outline
Package) or QFP where the leads project from the lateral surface of
the package.
[0011] In non-leaded semiconductor devices such as QFN, the
arrangement of external electrode terminals on the mounting surface
is a one-row structure. For this reason, if the number of external
electrode terminals (also referred to as the number of pins)
increases, in a structure where the leads are located in a row
along the circumference of the package), the size of the package
increases as compared with the size of the semiconductor element
(semiconductor chip). Therefore, the semiconductor device
manufacturing technology shown in the above-mentioned references
was developed for the purpose of making the package size more
compact.
[0012] In the former example known from the art (Japanese
Unexamined Patent Publication No. 2000-286376), there are hanging
leads supporting the island (chip fixing part) to which the
semiconductor chip is fixed, and there are connecting pieces (first
connection pieces, second connection pieces) which are external
electrode terminals alternately on the inside and outside of
connection members connecting adjacent hanging leads. The
connecting members are cut while moving a large dicing blade of
larger width than the width of the connecting members in the
extension direction of the connecting members.
[0013] However, the four corners of the frame which is separated
from the connection members are vacant regions where there are no
connection pieces, and effective use of the frame is not
achieved.
[0014] From the viewpoint of effective use of this frame, there is
the difficulty that the external electrode terminals cannot be
formed in the regions wherein the hanging leads are provided.
[0015] On the other hand, the first connection piece which extends
towards the island has a cantilever construction.
[0016] For this reason, when molding is performed by enclosing the
frame in a molding die comprising upper and lower dies, it may
occur that the tip of the first connection piece which has a
cantilever construction does not adhere to the parting surface of
the lower die. Resin enters into this poor adhesion part during
molding, and resin adheres to the mounting surface of the external
electrode terminals (resin burr). If this resin burr remains as it
is, it causes mounting defects, so a resin burr removal process is
also needed as a semiconductor device manufacturing step, and
reduction of manufacturing cost is prevented. In a structure where
the island is doubly surrounded by the connection members, all the
connection pieces that project from the connection members have a
cantilever construction, and the problem of resin burrs becomes
still worse.
[0017] On the other hand, as the first connection piece and second
connection piece are arranged in a staggered footprint shape, in
the third and higher rows, as they occur in a part which is coaxial
with the cutting location, it is difficult to use this part (in
particular the fourth corner) as an external terminal.
[0018] In the latter example known in the art (Japanese Unexamined
Patent Publication No. 2000-216280), the land structure formed by
making the frame body project partially by stamping, was made an
external electrode terminal of the semiconductor device. In the
last manufacturing step of the semiconductor device wherein a
sealing resin part at a predetermined location is separated by
cutting, this external electrode terminal is again pressed in the
stamping direction when the land structure is stamped out from the
rear surface of the terminal land frame with the terminal land
frame fixed when the land structure is formed, and fractured in the
step part of the land structure to manufacture the non-leaded
semiconductor device.
[0019] However, as the land structure used as an external electrode
terminal is formed by stamping, its size cannot be controlled to a
high precision and tends to vary. Moreover, as the dimensions of
the external electrode terminal are determined by shear when the
land structure is pressed to form the external electrode terminal
by shear, the fracture position also cannot be controlled to a high
precision. Consequently, the external form, dimensions and position
of the external electrode terminal easily vary. Therefore, the
mounting reliability is low.
[0020] Moreover, as the external electrode terminal is formed by a
fracture (shear) by pressing, a projection (burr) easily occurs on
the edge. Due to this projection (burr), not only is it impossible
to perform reliable mounting by soldering the semiconductor device,
but adjacent external electrode terminals come into electrical
contact due to the projection which is undesirable.
[0021] It is therefore an object of this invention to provide a
method of manufacturing a compact, non-leaded resin-sealed
semiconductor device.
[0022] It is a further object of this invention to provide a method
of manufacturing a non-leaded semiconductor device wherein the
number of external electrode terminals can be increased.
[0023] It is a further object of this invention to provide a method
of manufacturing a non-leaded semiconductor device wherein at least
two rows of external electrode terminals can be provided along one
edge of the semiconductor device.
[0024] It is a further object of this invention to provide a method
of manufacturing a non-leaded semiconductor device wherein the
external electrode terminals can be formed to a highly precise
shape and dimensions.
[0025] It is a further object of this invention to provide a method
of manufacturing a non-leaded semiconductor device which offers
highly reliable mounting.
[0026] Other purposes and features of this invention will become
apparent from the description of this specification and the
appended drawings.
[0027] The essential features of the present invention may be
summarized as follows.
[0028] (1) A non-leaded resin-sealed semiconductor device is
manufactured by the steps of providing a conductive flat substrate
(metal plate) such as copper or copper alloy, fixing semiconductor
elements respectively to predetermined parts of a principal surface
of the substrate, electrically connecting electrodes on the surface
of the semiconductor elements with predetermined partition parts of
the substrate separated from the semiconductor elements by
conductive wires, forming an insulating resin layer over
effectively the whole of a principal surface of the substrate to
cover the semiconductor elements and the wires, selectively
removing the substrate from the rear of the substrate to form
electrically independent partition parts (partition regions)
whereof at least some are external electrode terminals, and
selectively removing the resin layer to fragment the device into
the semiconductor elements and regions containing the plural
partition parts surrounding the semiconductor elements.
[0029] For example, assuming that the partition parts (partition
regions) on the substrate are like a grid pattern, rectangular
regions formed by plural partition parts may be considered as unit
substrate parts (unit substrate regions). These unit substrate
parts are disposed transversely and longitudinally on the
substrate. For example, a semiconductor element is fixed in the
center of each unit substrate part, and the electrodes of this
semiconductor element are connected to a predetermined partition
part separate from the semiconductor element by wires. There are at
least two rows of partition parts connected by wires outside the
semiconductor element. Next, the resin layer covering the
semiconductor element and wires is formed to a uniform thickness in
a one-side mold by transfer molding. Next, a tape which is a
supporting member is affixed to the whole of the front surface of
the resin layer. Next, the substrate is cut transversely and
longitudinally to electrically isolate the partition parts. Most of
the isolated partition parts are used as external electrode
terminals for mounting the non-leaded semiconductor device. Next,
the resin layer is cut transversely and longitudinally so that the
unit substrate regions are mutually independent. Next, plural
non-leaded semiconductor devices are manufactured by peeling the
tape off. The effective removal (isolation) of the substrate and
resin layer is performed for example by check pattern cutting with
a dicing blade.
[0030] Before fixing the semiconductor element, the partition parts
underneath the semiconductor element which are closed by the
semiconductor element, and the partition parts situated outside the
semiconductor element connected by wires, are connected by
conductive wires. When the semiconductor element is fixed, the
semiconductor element is fixed by crushing the wire into the
adhesive which bonds the semiconductor element to the
substrate.
[0031] (2) In the aforesaid construction (1), plural grooves are
provided transversely and longitudinally by etching one surface of
the flat, conductive substrate to form partition parts (partition
regions) surrounded by grooves in a grid pattern, and the
rectangular regions containing the plural partition parts are
considered as unit substrate parts (unit substrate regions) for
forming the non-leaded semiconductor device. These unit substrate
parts are aligned transversely and longitudinally on the substrate
(matrix arrangement).
[0032] The method of manufacturing the non-leaded semiconductor
device using this substrate is as follows. Semiconductor elements
are fixed to the unit substrate parts on the surface where grooves
are present and the surface where grooves are not present. For
example, a semiconductor element is fixed to the center of a unit
substrate part. The substrate is formed so that plural (two or
more) rows of partition parts are situated outside the
semiconductor element. Next, the electrodes of the semiconductor
element and a predetermined partition part situated outside the
semiconductor element or the rear surface of the predetermined
partition part are connected by wires. Next, a resin layer is
formed to a uniform thickness in a one-side mold by transfer
molding so as to cover the semiconductor element and wires. Next, a
tape is affixed over the whole of the front surface of the resin
layer. Subsequently, the groove bases are cut by moving a dicing
blade relatively along the extension direction of the groove so as
to isolate the substrate, i.e., isolate the partition regions.
Next, the resin layer is cut transversely and longitudinally so
that the unit substrate parts are mutually independent. The
independent unit substrate parts are supported by tape. Next,
plural non-leaded semiconductor devices are manufactured by peeling
off the tape.
[0033] The partition parts in the region adjacent to the center of
the semiconductor element are made thinner than the thickness of
the partition part supporting the peripheral part of the
semiconductor element, or eliminated completely, so as to generate
a predetermined gap between the mounting surface of the lower part
of the semiconductor element and the mounting board (standoff
structure).
[0034] When the semiconductor element is fixed to the surface where
grooves are present, isolation by removing the groove bases of the
partition parts may be performed by removing the substrate by
polishing or etching it to a fixed thickness. When the
semiconductor element is fixed to the surface where grooves are not
present, the grooves in the region to which the semiconductor
element is fixed, are filled by a filling material, and the
semiconductor element is fixed to the substrate using the aforesaid
adhesive so as to eliminate the gap between the semiconductor
element and the substrate. Also, through holes are provided at
intersection points which divide the substrate transversely and
longitudinally.
[0035] (3) In the aforesaid construction (2), plural grooves
extending transversely and longitudinally which meet so that they
mutually overlap are provided by etching the front and rear
surfaces of the flat, conductive substrate, to form partition parts
surrounded by grooves in a grid pattern, and the rectangular
regions containing the plural partition parts are considered as
unit substrate parts (unit substrate regions) for forming the
non-leaded semiconductor device. These unit substrate parts are
aligned transversely and longitudinally on the substrate. In the
method of manufacturing the non-leaded semiconductor device using
this substrate, and unlike the case of (2) above, the semiconductor
element is always fixed to the surface where grooves are
present.
[0036] (4) The pattern of unit substrate parts in the substrate is
different from the above constructions (2) and (3). The unit
substrate parts comprise tabs which fix the semiconductor elements,
and plural leads which project parallel from the sides of these
tabs. The leads are arranged in rows with the leads of other
adjacent unit substrate parts or in the substrate frame. The unit
substrate parts are aligned transversely and longitudinally in the
substrate (matrix arrangement). In the manufacture of the
semiconductor device, the tabs may be larger or smaller (small
tabs) than the semiconductor element.
[0037] In a construction wherein the unit substrate parts comprise
tabs and leads, the non-leaded semiconductor devices may be
manufactured by the following steps.
[0038] Specifically, the non-leaded semiconductor device is
manufactured by the steps of:
[0039] patterning a conductive substrate to form plural unit
substrate parts comprising rectangular tabs for fixing
semiconductor elements, and plural leads extending parallel from
predetermined sides of these tabs and extending from adjacent tabs
or connected to a substrate frame, the leads having two or more
wire connection regions midway along their length,
[0040] fixing the semiconductor elements to the tabs on the main
surface of the substrate respectively via an adhesive,
[0041] electrically connecting electrodes on the front surfaces of
the semiconductor elements to the predetermined wire connection
regions of the leads by conductive wires,
[0042] forming an insulating resin layer over effectively the whole
of the main surface of the substrate to cover the semiconductor
elements and wires,
[0043] affixing a tape over the whole surface of the resin
layer,
[0044] selectively removing the leads over their whole length to
electrically isolate the tabs, the substrate frame, the leads of
adjacent unit substrate regions and adjacent wire connection
regions so as to form external electrode terminals, and selectively
removing the resin layer to fragment it into the unit substrate
regions containing the unit substrate parts, and peeling off the
tape.
[0045] The parts of the leads to be selectively removed are formed
so that they are situated on straight lines in the transverse and
longitudinal directions of the substrate, and are removed by
dicing. When the leads are selectively removed, the front surface
of the semiconductor element is not removed. The selective removal
of the leads takes place at plural points in the length direction
of the leads, so as to form two or more rows of external electrode
terminals along the edge of the semiconductor device. The aforesaid
resin layer is formed in a one-side mold by transfer molding. The
transfer molding is performed by bringing the tab surfaces into
adhesive contact with a mounting surface of the mold by vacuum
suction so that the substrate is brought into adhesive contact with
the mounting surface of the mold.
[0046] According to the above means (1),
[0047] (a) Two or more rows of external electrode terminals are
arranged along one side of the non-leaded semiconductor device, so
the number of external electrode terminals can be increased.
[0048] (b) As two or more rows of external electrode terminals are
arranged along one side of the non-leaded semiconductor device, the
semiconductor device can be made compact.
[0049] (c) The external electrode terminals are formed by cutting a
metal plate transversely and longitudinally by a dicing blade, so
the shape and dimensions of the external electrode terminals can be
made very precise.
[0050] (d) As the external electrode terminals are formed by
cutting a metal plate transversely and longitudinally by a dicing
blade, long projections (manufacturing burrs) due to cutting do not
easily occur on the periphery of the external electrode terminals,
and the electrode flatness improves. As a result, when the
non-leaded semiconductor device is mounted on a mounting board
using solder or the like, faulty contacts of the external electrode
terminals with the lands (interconnections) of the mounting board
due to projections do not easily occur, so mounting strength is
improved and mounting reliability is improved.
[0051] (e) In a structure wherein partition parts in a region
enclosed by the semiconductor element are connected, by means of
wires, to partition parts to which wires are connected outside the
semiconductor element, external electrode terminals may also be
formed in a region underneath the semiconductor element, so not
only is there more flexibility in forming the interconnection
pattern on the mounting board, but the mounting board can be made
more compact by modifying the interconnection pattern.
[0052] (f) The partition parts (external electrode terminals) can
easily be formed by cutting one metal plate, so the cost of
manufacturing the semiconductor device can be reduced.
[0053] According to the above means (2),
[0054] (a) At least two rows of external electrode terminals are
disposed along one side of the non-leaded semiconductor device, so
the number of external electrode terminals can be increased.
[0055] (b) As two or more rows of external electrode terminals are
arranged along one side of the non-leaded semiconductor device, the
semiconductor device can be made compact.
[0056] (c) The external electrode terminals are formed by cutting a
metal plate transversely and longitudinally by a dicing blade, so
the shape and dimensions of the external electrode terminals can be
made very precise.
[0057] (d) As the external electrode terminals are formed by
cutting a metal plate transversely and longitudinally by a dicing
blade, long projections (manufacturing burrs) due to cutting do not
easily occur on the periphery of the external electrode terminals,
and the electrode flatness improves. As a result, when the
non-leaded semiconductor device is mounted on a mounting board
using solder or the like, faulty contacts of the external electrode
terminals with the lands (interconnections) of the mounting board
due to projections do not easily occur, so mounting strength is
improved and mounting reliability is improved.
[0058] (e) As external electrode terminals can be formed for plural
semiconductor devices simply by dicing with a dicing blade in the
transverse and longitudinal directions of one metal plate, the cost
of manufacturing semiconductor devices can be reduced.
[0059] (f) By providing grooves in the substrate and forming
electrically isolated partition regions by removing the groove
bases after forming the resin layer, the partition part isolation
time is shorter and the time required to manufacture the
semiconductor device is shortened. Due to this shortening of the
cutting time, there is less wear of the dicing blade and the life
of the blade is extended. Hence, the cost of manufacturing the
semiconductor device is reduced.
[0060] (g) As the grooves are formed by etching, manufacturing
burrs do not occur on the edges of the grooves. Therefore, in the
manufacturing method where the semiconductor element is fixed to
the surface where grooves are not present, the electrode flatness
of the external electrode terminals formed by the partition parts
is satisfactory, and the reliability of mounting the semiconductor
device is increased.
[0061] (h) By adopting a stand-off construction, problems do not
occur even if there are foreign bodies on the mounting board during
mounting of devices.
[0062] (i) When the semiconductor element is fixed to the surface
where grooves are present, isolation by removing the groove bases
of the partition parts may be performed by removing the substrate
by polishing or etching to a fixed thickness. In this case, the
electrode flatness of the external electrode terminals can be made
satisfactory.
[0063] (j) By providing through holes at intersection points which
divide the substrate transversely and longitudinally, the cutting
time by the dicing blade can be shortened and the life of the blade
can be extended.
[0064] (k) When the semiconductor element is fixed to a surface
where grooves are present, gaps between the semiconductor element
and the substrate are prevented from occurring by filling the
grooves in the region where the semiconductor element is fixed with
a filling material, water does not collect on the fixing surfaces
of the semiconductor element and substrate, and when the
semiconductor device is mounted by solder reflow, mounting defects
due to swelling of this water do not easily occur.
[0065] According to the above means (3), in addition to the effects
of the above means (2),
[0066] (a) grooves are provided facing each other on the front and
rear surfaces of the substrate, and when the partition regions of
the substrate are isolated, the groove bases of the grooves on the
front and rear surfaces can be cut simply by moving the dicing
blade relatively in the extension direction of the grooves,
therefore the isolation time of the partition parts is shorter and
the time required to manufacture the semiconductor device is
shortened. Also, due to the shortening of cutting time, there is
less wear on the dicing blade and the life of the blade is
extended. Hence, the cost of manufacturing the semiconductor device
is reduced. According to the above means (4), two or more rows of
external electrode terminals are disposed along one side of the
non-leaded semiconductor device, so the number of external
electrode terminals can be increased.
[0067] (b) As two or more rows of external electrode terminals are
arranged along one side of the non-leaded semiconductor device, the
semiconductor device can be made compact.
[0068] (c) The external electrode terminals are formed by cutting a
metal plate (leads) at plural points by a dicing blade, so the
shape and dimensions of the external electrode terminals can be
made very precise.
[0069] (d) As the external electrode terminals are formed by
cutting a metal plate (leads) at plural points by the dicing blade,
long projections (manufacturing burrs) due to cutting do not easily
occur on the periphery of the external electrode terminals, and the
electrode flatness improves. As a result, when the non-leaded
semiconductor device is mounted on a mounting board using solder or
the like, faulty contacts of the external electrode terminals with
the lands (interconnections) of the mounting board due to
projections do not easily occur, so mounting strength is improved
and mounting reliability is improved.
[0070] (e) As external electrode terminals can be formed for plural
semiconductor devices simply by dicing with a dicing blade in the
transverse and longitudinal directions of one metal plate, the cost
of manufacturing semiconductor devices can be reduced.
[0071] (f) The external electrode terminals can be formed by
cutting the leads in their width direction with the dicing blade,
so the cutting time can be shortened, and as the cutting time is
short, there is less wear on the dicing blade and the life of the
blade is extended. Hence, the cost of manufacturing the
semiconductor device is reduced.
[0072] (g) When the resin layer is formed by transfer molding, the
substrate is in adhesive contact with the mounting surface of the
mold by vacuum suction, and as the lead surfaces are also in
adhesive contact with the mounting surface, resin no longer seeps
onto the rear surface of the tabs and the rear surface of the
leads. Consequently, soiling of the mounting surface of the
semiconductor element by the resin can be prevented, and a
non-leaded semiconductor device having a high mounting reliability
can be manufactured.
BRIEF DESCRIPTION OF THE DRAWINGS
[0073] FIG. 1 is a schematic cross-sectional view of a nonleaded
resin sealing package type semiconductor device according to a
first embodiment (Embodiment 1) of this invention.
[0074] FIG. 2 is a plan view showing the semiconductor device with
part of the resin sealing package removed leaving a thin sealing
resin in the removed part.
[0075] FIG. 3 is a perspective view showing the planar arrangement
of the semiconductor device.
[0076] FIG. 4 is a base plan view of the semiconductor device.
[0077] FIG. 5 is an enlarged cross-sectional view of part of the
semiconductor device.
[0078] FIG. 6 is a cross-sectional view showing the mounting state
of the non-leaded semiconductor device.
[0079] FIGS. 7A to 7G are cross-sectional views of steps involved
in the method of manufacturing the non-leaded semiconductor
device.
[0080] FIG. 8 is a plan view showing the state where, in the
manufacture of the non-leaded semiconductor device, a semiconductor
element is fixed to a substrate and wires are attached thereto.
[0081] FIG. 9 is a schematic cross-sectional view of a nonleaded
semiconductor device having three rows of terminals manufactured by
the method of manufacturing the semiconductor device according to
Embodiment 1.
[0082] FIG. 10 is a perspective view showing the planar arrangement
of the semiconductor device having a three-row terminal
construction.
[0083] FIG. 11 is an enlarged cross-sectional view of part of the
semiconductor device having a three-row terminal construction.
[0084] FIGS. 12A and 12B are diagrams showing the shape of external
electrode terminals according to a modification of the method of
manufacturing the semiconductor device of Embodiment 1.
[0085] FIGS. 13A and 13B are diagrams showing the shape of external
electrode terminals according to another modification of the method
of manufacturing the semiconductor device of Embodiment 1.
[0086] FIGS. 14A to 14G are cross-sectional views of steps showing
the method of manufacturing the non-leaded semiconductor device
according to another embodiment (Embodiment 2) of this
invention.
[0087] FIG. 15 is a plan view showing the state where, in the
manufacture of the non-leaded semiconductor device, a semiconductor
element is fixed to a substrate and wires are attached thereto.
[0088] FIGS. 16A to 16G are cross-sectional views of steps showing
a method of manufacturing a non-leaded semiconductor device
according to another embodiment (Embodiment 3) of this
invention.
[0089] FIG. 17 is a cross-sectional view showing a dicing state in
the manufacture of a non-leaded semiconductor device according to a
Modification 1 of Embodiment 3.
[0090] FIG. 18 is a base plan view of the semiconductor device
manufactured by Modification 1 of Embodiment 3.
[0091] FIG. 19 is an enlarged cross-sectional view of part of the
semiconductor device manufactured by Modification 1 of Embodiment
3.
[0092] FIG. 20 is a cross-sectional view of the semiconductor
device manufactured by a Modification 2 of Embodiment 3.
[0093] FIG. 21 is an enlarged cross-sectional view of part of the
semiconductor device manufactured by Modification 2 of Embodiment
3.
[0094] FIG. 22 is a schematic cross-sectional view showing the
state where, in the manufacture of the semiconductor device
according to a Modification 3 of Embodiment 3, external electrode
terminals are formed by polishing.
[0095] FIG. 23 is a schematic plan view showing the state where the
substrate front surface is polished in Modification 3 of Embodiment
3.
[0096] FIGS. 24A and 24B are diagrams showing the shape of external
electrode terminals in a Modification 4 of Embodiment 3.
[0097] FIGS. 25A and 25B are diagrams showing the shape of external
electrode terminals in a Modification 5 of Embodiment 3.
[0098] FIGS. 26A and 26G are cross-sectional views of steps showing
a method of manufacturing a non-leaded semiconductor device
according to another embodiment (Embodiment 4) of this
invention.
[0099] FIG. 27 is a cross-sectional view showing a dicing state in
the manufacture of a semiconductor device according to a
Modification 1 of Embodiment 4.
[0100] FIG. 28 is a cross-sectional view of the semiconductor
device manufactured by Modification 1 of Embodiment 4.
[0101] FIG. 29 is an enlarged cross-sectional view of part of the
semiconductor device manufactured by Modification 1 of Embodiment
4.
[0102] FIGS. 30A to 30D are cross-sectional views of some of the
steps in the method of manufacturing the semiconductor device
according to a Modification 2 of Embodiment 4.
[0103] FIG. 31 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment 5)
of this invention.
[0104] FIG. 32 is a base plan view of the semiconductor device of
Embodiment 5.
[0105] FIG. 33 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment 6)
of this invention.
[0106] FIG. 34 is a base plan view of the semiconductor device of
Embodiment 6.
[0107] FIG. 35 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment 7)
of this invention.
[0108] FIG. 36 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 7.
[0109] FIG. 37 is a base plan view of the semiconductor device of
Embodiment 7.
[0110] FIG. 38 is an enlarged cross-sectional view of part of the
semiconductor device of Embodiment 7.
[0111] FIG. 39 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment 8)
of this invention.
[0112] FIG. 40 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 8.
[0113] FIG. 41 is a base plan view of the semiconductor device of
Embodiment 8..backslash.
[0114] FIG. 42 is a schematic plan view of the substrate used in
the method of manufacturing a semiconductor device according to
another embodiment (Embodiment 9) of this invention.
[0115] FIG. 43 is a cross-sectional view along a line A-A in FIG.
42.
[0116] FIG. 44 is a cross-sectional view along a line B-B in FIG.
42.
[0117] FIG. 45 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment
10) of this invention.
[0118] FIG. 46 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 10.
[0119] FIG. 47 is a base plan view of the semiconductor device of
Embodiment 10.
[0120] FIGS. 48A to 48C are cross-sectional views of some of the
steps in the method of manufacturing the semiconductor device
according to Embodiment 10.
[0121] FIG. 49 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment
11) of this invention.
[0122] FIG. 50 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 11.
[0123] FIGS. 51A to 51D are cross-sectional views of some of the
steps in the method of manufacturing a semiconductor device
according to Embodiment 11.
[0124] FIG. 52 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment
12) of this invention.
[0125] FIGS. 53A to 53C are cross-sectional views of some of the
steps in the method of manufacturing a semiconductor device
according to Embodiment 12.
[0126] FIG. 54 is a perspective view showing the planar arrangement
of the non-leaded semiconductor device manufactured by the
semiconductor device manufacturing method according to another
embodiment (Embodiment 13) of this invention.
[0127] FIGS. 55A to 55G are cross-sectional views of the steps in a
semiconductor device manufacturing method according to another
embodiment (Embodiment 14) of this invention.
[0128] FIG. 56 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a semiconductor device
manufacturing method according to another embodiment (Embodiment
15) of this invention.
[0129] FIG. 57 is a plan view showing an external outline of the
resin sealing package without the resin sealing package of the
semiconductor device of Embodiment 15.
[0130] FIG. 58 is a base plan view of the semiconductor device of
Embodiment 15.
[0131] FIG. 59 is an enlarged cross-sectional view of part of the
semiconductor device of Embodiment 15.
[0132] FIGS. 60A to 60G are cross-sectional views of the steps in
the semiconductor device manufacturing method according to
Embodiment 15.
[0133] FIG. 61 is a schematic plan view showing a lead frame used
in the semiconductor device manufacturing method according to
Embodiment 15, and a fixed semiconductor chip.
[0134] FIG. 62 is a schematic view showing the arrangement of
vacuum pads which apply vacuum suction to the lead frame during
transfer molding in the semiconductor device manufacturing method
according to Embodiment 15.
[0135] FIG. 63 is a schematic cross-sectional view showing a vacuum
suction state of the lead frame during transfer molding in the
semiconductor device manufacturing method according to Embodiment
15.
[0136] FIG. 64 is a cross-sectional view of a non-leaded
semiconductor device manufactured by the semiconductor device
manufacturing method according to another embodiment (Embodiment 16
) of this invention.
[0137] FIG. 65 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 16.
[0138] FIG. 66 is a base plan view of the semiconductor device of
Embodiment 16.
[0139] FIG. 67 is an enlarged cross-sectional view of part of the
semiconductor device of Embodiment 16.
[0140] FIG. 68 is a schematic plan view showing the lead frame used
in the semiconductor device manufacturing method according to
Embodiment 16, and a fixed semiconductor chip.
[0141] FIG. 69 is an enlarged cross-sectional view showing part of
the lead frame used in Embodiment 16.
[0142] FIG. 70 is a cross-sectional view of a non-leaded
semiconductor device manufactured by the semiconductor device
manufacturing method according to another embodiment (Embodiment 17
) of this invention.
[0143] FIG. 71 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 17.
[0144] FIG. 72 is a base plan view of the semiconductor device of
Embodiment 16.
[0145] FIG. 73 is a cross-sectional view of a non-leaded
semiconductor device manufactured by the semiconductor device
manufacturing method according to another embodiment (Embodiment
18) of this invention.
[0146] FIG. 74 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 18.
[0147] FIG. 75 is a base plan view of the semiconductor device of
Embodiment 18.
[0148] FIG. 76 is a cross-sectional view of a non-leaded
semiconductor device manufactured by the semiconductor device
manufacturing method according to another embodiment (Embodiment
19) of this invention.
[0149] FIG. 77 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 19.
[0150] FIG. 78 is a base plan view of the semiconductor device of
Embodiment 19.
[0151] FIG. 79 is a schematic cross-sectional view of a nonleaded
semiconductor device according to another embodiment (Embodiment
20) of this invention.
[0152] FIG. 80 is a perspective view showing the planar arrangement
of the semiconductor device of Embodiment 20.
[0153] FIG. 81 is a base plan view of the semiconductor device of
Embodiment 20.
[0154] FIG. 82 is an enlarged cross-sectional view of part of the
semiconductor device of Embodiment 20.
[0155] FIG. 83 is a schematic cross-sectional view of a nonleaded
semiconductor device according to another embodiment (Embodiment
21) of this invention.
[0156] FIG. 84 is a schematic cross-sectional view of a nonleaded
semiconductor device according to another embodiment (Embodiment
22) of this invention.
[0157] FIG. 85 is a perspective view showing the planar arrangement
of external electrode terminals in the non-leaded semiconductor
device of Embodiment 22.
[0158] FIG. 86 is a base plan view of the non-leaded semiconductor
device of Embodiment 22.
[0159] FIG. 87 is an enlarged cross-sectional view of part of the
non-leaded semiconductor device of Embodiment 22.
[0160] FIGS. 88A to 88G are cross-sectional views of the steps in
the method of manufacturing the non-leaded semiconductor device of
Embodiment 22.
[0161] FIG. 89 is a schematic plan view of a substrate used in the
method of manufacturing the non-leaded semiconductor device of
Embodiment 22.
[0162] FIG. 90 is a schematic enlarged cross-sectional view showing
a unit substrate region of the substrate used in the method of
manufacturing the semiconductor device of Embodiment 22.
[0163] FIG. 91 is an enlarged cross-sectional view showing the unit
substrate region of the substrate used in the method of
manufacturing the semiconductor device of Embodiment 22.
[0164] FIG. 92 is a partial cross-sectional view showing the
substrate molded by one-side molding in the method of manufacturing
the semiconductor device of Embodiment 22.
[0165] FIGS. 93A to 93C are partial enlarged cross-sectional views
of manufacturing steps showing a substrate formed by one-side
molding and a substrate whereof the substrate rear surface is
etched.
[0166] FIG. 94 is a partial cross-sectional view of a resin sealing
package wherein a substrate rear surface is etched and the frame
part is removed.
[0167] FIG. 95 is a schematic cross-sectional view of a nonleaded
semiconductor device according to a modification of Embodiment
22.
[0168] FIG. 96 is a perspective view showing the planar arrangement
of external electrode terminals in the semiconductor device of the
modification.
[0169] FIG. 97 is a base plan view of the semiconductor device of
the modification.
[0170] FIGS. 98A to 98G are cross-sectional views of steps showing
a method of manufacturing a non-leaded semiconductor device
according to another embodiment (Embodiment 23) of this
invention.
[0171] FIG. 99 is an enlarged cross-sectional view showing part of
the non-leaded semiconductor device of Embodiment 23.
[0172] FIG. 100 is a schematic cross-sectional view of a nonleaded
semiconductor device according to another embodiment (Embodiment
24) of this invention.
[0173] FIG. 101 is a perspective view showing the planar
arrangement of external electrode terminals in the non-leaded
semiconductor device of Embodiment 24.
[0174] FIG. 102 is a base plan view of the non-leaded semiconductor
device of Embodiment 24.
[0175] FIG. 103 is an enlarged cross-sectional view of part of the
non-leaded semiconductor device of Embodiment 24.
[0176] FIGS. 104A to 104G are schematic cross-sectional views of
the steps in the method of manufacturing the non-leaded
semiconductor device of Embodiment 24.
[0177] FIGS. 105A and 105B are schematic enlarged views showing a
unit substrate region in a substrate used to manufacture the
non-leaded semiconductor device of Embodiment 24.
[0178] FIG. 106 is a schematic cross-sectional view showing a
non-leaded semiconductor device according to another embodiment
(Embodiment 25) of this invention.
[0179] FIG. 107 is a perspective view showing the planar
arrangement of external electrode terminals of the non-leaded
semiconductor device of Embodiment 25.
[0180] FIG. 108 is a base plan view of the non-leaded semiconductor
device of Embodiment 5.
[0181] FIG. 109 is an enlarged cross-sectional view of part of the
non-leaded semiconductor device of Embodiment 25.
[0182] FIG. 110 is a descriptive diagram showing the relation
between the interconnections on the mounting board and the external
electrode terminals of the non-leaded semiconductor device during
the mounting of the non-leaded semiconductor device of Embodiment
25.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0183] Some embodiments of this invention will now be described in
detail referring to the appended drawings. In all of the drawings
used to describe the embodiments of the invention, parts having
identical functions are assigned the same symbols and their
description will not be repeated.
[0184] (Embodiment 1)
[0185] FIG. 1 to FIG. 13 are diagrams related to the method of
manufacturing a non-leaded resin-sealed semiconductor device
according to a first embodiment (Embodiment 1) of the invention. In
Embodiment 1, in FIG. 1 to FIG. 4, an example is shown wherein the
method of this invention is applied to the manufacture of a
non-leaded semiconductor device 1 wherein external electrode
terminals 2 comprising a conductive body (metal) are exposed on the
rear surface of a square sealing package 33.
[0186] In Embodiment 1, as shown in FIG. 1 and FIG. 2, electrically
isolated partition parts 4 (partition regions) 2 are provided in a
grid pattern on the rear surface (mounting surface side) of a
sealing package 3 comprising a rectangle of predetermined
thickness. In Embodiment 1, a semiconductor device will be
described wherein two rows of the partition parts 4 are provided as
the external electrode terminals 2 along each side of the square
resin sealing package.
[0187] The partition parts (partition regions) 4 are squares
wherein for example the horizontal and vertical sides are both 0.5
mm. The interval between the partition region 4 and partition
region 4 may for example be approximately 0.15 mm. When the pitch
of the external electrode terminals is 0.5 mm, the horizontal and
vertical dimensions of the partition regions 4 are respectively
0.35 mm. A semiconductor element (semiconductor chip) 5 is situated
inside the resin sealing package 3, and electrodes 6 of the
semiconductor element 5 (FIG. 3) are electrically connected by
means of conductive wires 7 to both sides of the predetermined
partition parts 4 covered by the resin sealing package 3. The wires
7 are also covered by the resin sealing package 3.
[0188] The semiconductor element 5 is fixed to the plural partition
parts 4 by an adhesive 9. The adhesive 9 may be conductive or
insulating. In this example, a conductive adhesive is used, for
example silver (Ag) paste. Therefore, if the substrate parts in
contact with the partition parts 4 of the semiconductor chip are
layers which are not used electrically, the partition parts 4 which
are connected to the semiconductor element 5 via the conductive
adhesive 9, are not used as external electrode terminals. However,
in this case also they may be used as mounting terminals. Further,
as shown in the other embodiments described later, by connecting
the partition parts 4 to which the wires 7 situated outside the
semiconductor element 5 are connected, and some of the partition
parts 4 situated underneath covered by the semiconductor element 5,
the partition parts 4 situated underneath the semiconductor element
5 may also be used as the external electrode terminals 2.
[0189] When the substrate parts in contact with the partition parts
4 of the semiconductor chip are used at ground potential, the
partition parts 4 connected to the semiconductor element 5 via the
adhesive 9 may be used as ground electrodes for the external
electrode terminals 2.
[0190] If an insulating material is used for the adhesive 9, the
partition parts 4 connected to the semiconductor element 5 via the
adhesive 9 are all electrically isolated. In a structure wherein
the partition parts 4 not used as the external electrode terminals
2 are also fixed to the interconnection board by a bonding material
such as solder or the like during installation of the semiconductor
device 1, the mounting strength can be increased. Further, heat
dissipation is also improved. In this structure also, by connecting
the partition parts 4 to which the wires 7 situated outside the
semiconductor element 5 are connected, and some of the partition
parts situated underneath covered by the semiconductor element 5,
by wires or the material parts forming the partition parts 4, the
partition parts 4 situated underneath the semiconductor element 5
may also be used as the external electrode terminals 2, as
described above.
[0191] A plating film 11 as shown in FIG. 5 is provided on the
surface (inner surface 10) to which the wires 7 of the partition
members 4 are connected. This plating film 11 is provided to make
good contact with the wires 7. For example, the wires 7 may be Au
wires, and the plating film 11 may be an Ag plating film, Au
plating film or Pd plating film.
[0192] An external mounting plating film 13 used for mounting is
provided on the rear surfaces (mounting surfaces 12) of the
partition parts 4. This external mounting plating film 13 is
provided to make good contact (leak properties) with a bonding
material when the semiconductor device 1 is mounted on an
interconnection board such as a modular substrate or the like. When
PbSn is used as the bonding material, the external mounting plating
film 13 is preferably a PbSn solder plating film, and in Embodiment
1, a PbSn solder plating film is used.
[0193] In Embodiment 1, there are two rows of the partition parts 4
situated outside the semiconductor element 5 along each side of the
rectangular resin sealing package 3. In these two rows of partition
parts 4, i.e., in the external electrode terminals 2, there are
also external electrode terminals which are not connected by the
wires 7, as shown in FIG. 2 and FIG. 3.
[0194] FIG. 6 is a cross-sectional view showing a state where the
semiconductor device 1 of Embodiment 1 is incorporated in an
electronic device, i.e., where it is mounted on an interconnection
board 15 such as a motherboard or modular board of the electronic
device. Lands 17 corresponding to the external electrode terminals
2 of the semiconductor device 1 are provided by some of
interconnections 16 on the principal surface of the interconnection
board 15 having a multilayer interconnection structure. The
external electrode terminals 2 of the semiconductor device 1 are
electrically connected to these lands 17 via solder (PbSn solder)
18.
[0195] Next, the method of manufacturing the above semiconductor
device will be described. The semiconductor device is manufactured
by first fixing the semiconductor element to one surface of the
substrate leaving a predetermined gap. The electrodes of the
semiconductor element are connected to predetermined substrate
regions outside the semiconductor element by conductive wires, a
resin layer of fixed thickness is formed by a one-side mold by
transfer molding so as to cover the semiconductor element and
wires, and fragmentation is then performed by cutting the resin
layer transversely and longitudinally. The wire connecting parts
can be connected to any of the partition parts. The fragmentation
is a division into one semiconductor element, and each of the
rectangular regions comprising the plural partition parts situated
around this semiconductor element. By cutting the resin layer, the
resin sealing package of the semiconductor device is formed.
[0196] Next, the manufacture of the semiconductor device will be
described in more detail referring to the process diagrams of FIG.
7. In these process diagrams, shading is not used for the
description as it makes the diagrams unclear. Likewise, the
following embodiments will be described without the use of shading
in some cases.
[0197] In the manufacture of the non-leaded semiconductor device, a
semiconductor substrate 20 is first provided as shown in FIG. 7(a).
This substrate 20 comprises a metal plate such as a copper alloy
plate, copper plate or iron-nickel alloy plate usually used for the
manufacture of semiconductor devices. In Embodiment 1, a flat
copper plate is used. As shown in FIG. 8, this substrate 20 is a
rectangular flat plate (rectangular plate) of a size such that
plural semiconductor devices can be manufactured in one operation,
for example 3 columns and 8 rows of 24 semiconductor devices can be
manufactured. Although not shown in FIGS. 7A to 7G, to improve the
bonding properties of the semiconductor element and the
connectivity of the wires, the plating film 11 (FIG. 5) comprising
Ag is provided on one surface of the substrate 20, i.e., on the
principal surface to which the semiconductor element is fixed. The
thickness of the substrate 20 may for example be 0.125-0.2 mm.
[0198] Next, as shown in FIG. 7B and FIG. 8, the semiconductor
element 5 is fixed to the principal surface of the substrate 20
using the usual chip bonding device, not shown. As shown in FIG. 5,
the semiconductor element 5 is fixed by the adhesive 9 comprising
Ag paste. In this process, in order not to cut the rear surface
(fixing surface) of the semiconductor element 5 when the substrate
20 is cut by a dicing blade in a subsequent process, the thickness
of the adhesive 9 is set as thick as, for example, approximately
30-100 um so that the tip of the dicing blade stops at the middle
layer of the adhesive 9. In this chip bonding, the semiconductor
elements 5 are aligned (in a matrix pattern) leaving a
predetermined gap horizontally and vertically from the principal
surface of the substrate 20. A region having predetermined gaps is
left between each of the semiconductor elements 5, and this region
is the outer periphery of the semiconductor devices. Therefore,
although the substrate 20 is not patterned in any way, the
rectangular region part surrounded by the outer periphery of the
semiconductor elements is a unit substrate part (unit substrate
region) for forming one non-leaded semiconductor device.
[0199] Next, as shown in FIG. 7C and FIG. 8, the electrode 6 (FIG.
3) on the front surface of the semiconductor element 5 is connected
to the region 4 which is a predetermined partition part in the
rectangular frame region surrounding the semiconductor element 5 by
the conductive wires 7. The wires 7 may for example be gold wires,
and are connected by a wire bonding device, not shown.
[0200] Next, as shown in FIG. 7D, a resin layer 3a is formed by an
insulating resin on the principal surface of the substrate 20 using
a transfer molding device, not shown. The resin layer 3a is formed
to a uniform thickness, and the semiconductor elements 5 and wires
7 are covered by the resin without leaving any gaps. The thickness
of this resin layer 3a covers the semiconductor elements 5 and
wires 7, and provided that the moisture resistance of the
semiconductor device does not decrease, it is made as thin as
possible to make the semiconductor device thinner. The insulating
resin forming the resin layer of 3a may for example be an epoxy
resin. The resin layer 3a may also be formed by a resin filling
method other than transfer molding. Specifically, it may be formed
also by applying with a dispenser having a multi-nozzle.
[0201] Next, as shown in FIG. 7E, the external mounting plating
film 13 is formed on the rear surface of the substrate 20. In FIG.
7E, only the symbol is shown. The external mounting plating film 13
is shown in FIG. 5. The external mounting plating film 13 may also
be formed by PbSn solder, for example by electroplating. The
external mounting plating film 13 is formed to a thickness of
approximately 5-20 um.
[0202] Next, as shown in FIG. 7F, a tape 21 is affixed as a
supporting member to the whole of the front surface of the resin
layer 3a. Subsequently, the substrate 20 is cut transversely and
longitudinally by a dicing blade 22 with the substrate 20 facing
upwards, and the partition parts 4 comprising squares (rectangles)
are thereby formed. As shown in FIG. 4, the parts cut by the dicing
blade 22 are in a checkered pattern, and the partition parts 4 are
formed in a grid pattern between them.
[0203] If the dicing blade 22 has a thickness of 150 .mu.m, for
example, the partition parts 4 having sides of 0.5 mm are formed in
a grid pattern at a pitch of 0.65 mm. In this dicing, as the
substrate 20 is cut without fail, the tip of the dicing blade is
diced to a depth which passes through the substrate 20, but care is
taken not to cut the rear surface of the semiconductor element 5.
Consequently, the dicing groove bases are situated at an
intermediate depth of the adhesive 9 which fixes the semiconductor
element 5 to the substrate 20. There is no particular problem if
the dicing groove is formed in a surface layer part inside the
resin layer 3a.
[0204] The boundary between a unit substrate region and a unit
substrate region is cut by the dicing blade 22, and the resin layer
3a is cut simultaneously. Due to the cutting of the resin layer 3a,
fragmentation is achieved, and plural semiconductor devices 1 are
manufactured although they are still attached to the tape 21. The
resin layer 3a covering the semiconductor elements 5 and wires 7
form a sealing package 3 due to this cutting.
[0205] In the cutting of the resin layer 3a, care is taken not to
completely cut the tape 21. This is because the cutting is
performed in the two directions XY, and it is preferred that even
after cutting in one direction, each part is supported by the tape
21.
[0206] The dicing blade 22 may have only one blade, or it may have
plural blades which perform cutting of plural devices
simultaneously in parallel directions.
[0207] In the above embodiment, an example was described where,
when the partition parts 4 are formed and fragmentation is
performed, the tape 21 was a fixed as a supporting member over the
whole of the front surface of the resin layer 3a before cutting by
the dicing blade, but the invention is not necessarily limited to
this case, it being possible to support the resin layer 3a by a
fixing tool instead of the tape 21.
[0208] Next, as shown in FIG. 7(g), plural non-leaded semiconductor
devices 1 are manufactured by peeling off the tape 21 from the
resin sealing body 3. In this construction, in the semiconductor
device 1 of Embodiment 1, the external electrode terminals 2 are
formed in two rows along the edges (sides) of the semiconductor
device 1.
[0209] Embodiment 1 has the following advantages.
[0210] (1) The external electrode terminals 2 are formed in two
rows along the periphery (sides) of the non-leaded semiconductor
device, so the number of external electrode terminals 2 can be
increased.
[0211] (2) In a non-leaded semiconductor device which requires a
large number of external electrode terminals, the external
electrode terminals have to be aligned in one row along one side of
the sealing package, so the length of one side of the package has
to be increased, the sealing package becomes larger and the
semiconductor device becomes large, but in the case of Embodiment
1, the external electrode terminals 2 are disposed in two rows
along the sides of the semiconductor device, so a sealing package
33 can be made smaller, and the semiconductor device 1 can be made
compact.
[0212] (3) Due to the aforesaid (1) and (2), the number of external
electrode terminals 2 can be increased even in a small resin
sealing package, so large numbers of terminals are possible. This
is desirable in a multi-function semiconductor device.
[0213] (4) As the external electrode terminals 2 are formed by
cutting transversely and longitudinally by the dicing blade, the
shape and dimensions of the external electrode terminals 2 can be
controlled to a high precision.
[0214] (5) As the external electrode terminals 2 are formed by
cutting a metal plate transversely and longitudinally by the dicing
blade, long projections (manufacturing burrs) due to cutting do not
easily occur on the periphery of the external electrode terminals,
and the electrode flatness improves. As a result, when the
non-leaded semiconductor device is mounted on the interconnection
board 15 such as a motherboard, modular board or mounting board
using solder or the like, faulty contacts of the external electrode
terminals 2 with the lands (interconnections) 17 of the mounting
board due to projections do not easily occur, so mounting strength
is improved and mounting reliability is improved.
[0215] (6) As the partition parts (external electrode terminals)
can easily be formed by cutting one metal plate, the cost of
manufacturing the semiconductor device is reduced.
[0216] (7) According to the aforesaid (1)-(6), a non-leaded
semiconductor device which has a high mounting reliability, is
compact and has large numbers of external electrode terminals, can
be manufactured economically.
[0217] Next, a modification of Embodiment 1 will be described. FIG.
9 to FIG. 11 are diagrams relating to another non-leaded
semiconductor device manufactured by the semiconductor device
manufacturing method of Embodiment 1. These diagrams show a
non-leaded semiconductor device with a three row terminal
construction wherein the external electrode terminals 2 are
arranged in three rows. Specifically, in this semiconductor device
1, the wires 7 are connected to three rows of partition parts 4
separated from the semiconductor element 5. As contact between the
wires is to be avoided, wires are not connected to some of the
partition parts 4. The three rows of partition parts 4 to which the
wires 7 are connected, are used as the external electrode terminals
2. However, in order to increase mounting strength, the partition
parts 4 situated in the region underneath the semiconductor element
5 may also be used for mounting.
[0218] FIGS. 12A and 12B are diagrams showing the shape of the
external electrode terminals according to this modification of the
manufacturing method of the semiconductor device of Embodiment 1.
FIG. 12A is a plan view of the partition part 4, and FIG. 12B is a
cross-sectional view. This is achieved by etching, instead of
dicing, the substrate 20. Specifically, to form the partition parts
in the substrate 20, a photoresist film is selectively exposed and
developed to form a predetermined etching mask. The partition parts
4 shown in FIGS. 12A and 12B are then formed by etching the
substrate 20 using a predetermined etching liquid.
[0219] When the partition parts are formed by etching, partition
parts having any desired shape can be formed by the pattern of the
etching mask. Therefore, a large partition part effectively
corresponding to the semiconductor element fixing region can also
be formed, and the semiconductor element can be fixed to a single
partition part. In this case, there is the advantage that the heat
generated by the semiconductor element 5 can be dissipated by
dispersing it uniformly underneath the semiconductor element.
[0220] The cutting of the substrate 20 may be performed by another
method, for example, it can also be cut by melting with laser beam
irradiation. This cutting technique can likewise be applied to the
cutting (fragmentation) of the resin layer 3a. In other words, the
resin layer 3a can be cut by dicing or laser beam irradiation.
[0221] In Embodiment 1, one semiconductor element was integrated in
a unit substrate part, but a non-leaded semiconductor device of
even higher performance and a higher level of integration can be
manufactured by fixing plural semiconductor elements to unit
substrate parts, connecting the electrodes of the semiconductor
elements to the surrounding partition parts by wires, and
fragmenting into the unit substrate regions containing plural
semiconductor elements and plural partition parts.
[0222] Also, the external electrode terminals 2 can also be formed
underneath the semiconductor element 5 by electrically connecting
the regions of the external electrode terminals separated from the
region in which the semiconductor element 5 is fixed, to the
predetermined partition part 4 in which the semiconductor element 5
is fixed, by means of the conductive wires 7, and fixing the
semiconductor element 5 to the substrate 20 by an insulating
adhesive so as to enclose part of the wires 7. This permits the
external electrode terminals 2 to be provided also underneath the
semiconductor element, and increases the degree of freedom of
design such as interconnection patterning of the mounting board.
Further, by connecting the partition parts underneath the
semiconductor element 5 to which the wires are connected with other
partition parts 4 underneath the semiconductor element 5 by the
conductive wires 7, the partition parts 4 can be used as the
external electrode terminals 2 even in the center region.
[0223] If through holes are also provided at intersection points
which divide the substrate 20 transversely and longitudinally, when
dicing is performed, the cutting time is shortened, and the time
required for forming the partition parts (external electrode
terminals) is shortened. Further, manufacturing burrs in the
cutting intersection parts due to the dicing blade occur to an even
lesser extent.
[0224] It is preferred that bonding strength enhancement is given
to the principal surface of the substrate 20 so that the partition
parts 4 are strongly bonded to the sealing resin (sealing package).
As one way of doing this, for example as shown in FIG. 13, the
plating film 11 is provided only in the central part of the
partition part 4, and the periphery is left as a rough surface 25
(roughening). Alternatively, although not shown in Embodiment 1,
grooves or depressions may be provided to increase the contact
surface area with the resin sealing body 33. By adopting these
techniques, the mounting reliability of the external electrode
terminals 2 of the semiconductor device 1 is increased.
[0225] Herein, an example was described where all the semiconductor
elements 5 and wires 7 were molded by the resin on the substrate 20
using a transfer molding device, but the semiconductor elements 5
on the substrate 20 can also be molded individually. In this case,
the substrate 20 can be fragmented into the semiconductor devices 1
simply by cutting.
[0226] In Embodiment 1, an example was described where
fragmentation was performed into the unit substrate parts, but
interconnected semiconductor elements may also be respectively
fixed to unit substrates, and one semiconductor device formed by
these plural unit substrates. In this case, the chipset can be
provided as one package.
[0227] In this embodiment, a matrix type substrate was used as the
substrate, but a fragmented type substrate may also be used.
[0228] (Embodiment 2)
[0229] FIG. 14 and FIG. 15 are diagrams relating to the method of
manufacturing the non-leaded semiconductor device according to
another embodiment (Embodiment 2) of this invention. FIG. 14 is a
cross-sectional view of the steps showing the method of
manufacturing the semiconductor device, and FIG. 15 is a plan view
of the substrate to which semiconductor elements are fixed and
wires are attached.
[0230] In Embodiment 2, grooves 25 are formed along the lines which
cut the substrate 20 in Embodiment 1. The grooves 25 may be formed
by a dicing blade or by etching, but are formed by etching in
Embodiment 1. Regarding the forming of the grooves 25, although not
shown, a photoresist film is provided over the whole surface of the
substrate 20, and exposed to a predetermined pattern. Subsequently,
the photoresist film is developed to form a checkered pattern of
grooves, and the checkered pattern of grooves 25 is then provided
on one surface of the substrate 20 by etching. In Embodiment 2, a
copper plate of thickness 0.125-0.2 mm is for example used as the
substrate 20 as in Embodiment 1. The thickness of the groove bases
of the grooves 25 may for example be approximately 50 .mu.m.
[0231] According to this method, the cutting depth of the dicing
blade 22 is only the groove bases of the grooves 25, and due to the
decrease in the amount of cutting, the time required for forming
the external electrode terminals and fragmentation is
shortened.
[0232] Also, due to the reduction in the amount of cutting, the
dicing blade 22 has less wear, and the life of the dicing blade 22
is extended.
[0233] This Embodiment 2 is an example wherein the non-leaded
semiconductor device 1 is manufactured by providing the grooves 25
on the rear surface of the substrate 20. The method of
manufacturing the semiconductor device will be described referring
to the cross-sectional views of the steps in FIGS. 14A to 14G. As
shown in FIG. 14A, the conductive substrate 20 is first provided as
in Embodiment 1. Subsequently, the grooves 25 are formed
transversely and longitudinally by etching as described above on
the rear surface of this substrate 20. As shown in FIG. 15, a
matrix of the partition parts 4 is formed by the checkered pattern
of the grooves 25. Regarding the dimensions of the partition parts
4, each transverse and longitudinal side is 0.5 mm as in the case
of Embodiment 1. FIG. 15 is a plan view of the substrate 20 when
the semiconductor elements 5 are fixed to the surface where the
grooves are not present, i.e., to the principal surface of the
substrate 20, and the connections of the wires 7 have been
completed. In the same figure, the grooves 25 and partition parts 4
are shown by broken lines. The plating film 11, not shown, for
obtaining satisfactory fixing (connections) of the semiconductor
elements 5 and wires 7 is also formed before or after forming the
grooves 25.
[0234] Next, the semiconductor elements 5 are fixed as in
Embodiment 1 to the surface where grooves are not present, i.e., to
the principal surface of the substrate 20, and as shown in FIG.
14C, the electrodes of the semiconductor elements 5 are connected
to the principal surface of the substrate, i.e., the rear surfaces
of the partition parts 4 separated from the semiconductor elements
5, by the conductive wires 7 (FIG. 15).
[0235] Next, as shown in FIG. 14D, the resin layer 3a of an
insulating resin is formed on the principle surface of the
substrate 20 by transfer molding so as to cover the semiconductor
elements 5 and wires 7. The resin layer 3a is formed to a uniform
thickness. The semiconductor elements 5 and wires 7 are covered by
the resin so as to leave no gaps.
[0236] Next, as shown in FIG. 14E, the external mounting plating
film 13, not shown, is formed on the rear surface of the substrate
(front surfaces of the partition parts 4) as in Embodiment 1.
[0237] Next, as shown in FIG. 14F, the tape 21 is affixed as a
supporting member over the whole of the front surface of the resin
layer 3a, and the substrate 20 is then cut transversely and
longitudinally by the dicing blade 22 with the substrate 20 facing
upwards. The groove bases of the grooves 25 are cut and removed
while the dicing blade 22 moves relatively along the extension
direction of the grooves 25. In this case also, care is taken not
to cut the rear surfaces of the semiconductor elements 5 by the
dicing blade.
[0238] The substrate 20 and the resin layer 3a attached to the
substrate 20 are cut by the dicing blade 22 between the unit
substrate parts so as to perform fragmentation. By cutting the
substrate 20, the partition parts 4 become electrically isolated
partition parts 4. Further, due to the cutting of the resin layer
3a, the resin sealing package 3 is formed.
[0239] Next, as shown in FIG. 14G, plural non-leaded semiconductor
devices 1 are manufactured by peeling the tape 21 off the resin
sealing package 3.
[0240] In this embodiment 2, an example was described where the
grooves 25 were provided in a checkered pattern of equal pitch, but
the invention is not limited to this case. Specifically, when the
partition parts are squares, the grooves are provided at equal
pitch, but when the partition parts are rectangles, the transverse
and longitudinal groove pitches are different. Partition parts
which have partially different dimensions may also be formed.
[0241] Further, when the cutting and separation of the substrate is
cutting by laser beam irradiation or cutting by etching, the shape
and dimensions of the partition parts may also be varied between
adjacent partition parts.
[0242] Embodiment 2 has the following advantages.
[0243] (1) The external electrode terminals 2 are formed in two
rows along the periphery (sides) of the non-leaded semiconductor
device, so the number of the external electrode terminals 2 can be
increased.
[0244] (2) In a non-leaded semiconductor device which requires a
large number of external electrode terminals, the external
electrode terminals have to be aligned in one row along one side of
the sealing package, so the length of one side of the package has
to be increased, the sealing package becomes larger and the
semiconductor device becomes large, but in the case of Embodiment
2, the external electrode terminals 2 are disposed in two rows
along the sides of the semiconductor device, so the sealing package
3 can be made smaller, and the semiconductor device 1 can be made
compact.
[0245] (3) Due to the aforesaid (1) and (2), the number of external
electrode terminals 2 can be increased even in a small resin
sealing package, so large numbers of terminals are possible. This
is desirable in a multi-function semiconductor device.
[0246] (4) As the external electrode terminals 2 are formed by
cutting transversely and longitudinally by the dicing blade, the
shape and dimensions of the external electrode terminals 2 can be
controlled to a high precision.
[0247] (5) As the external electrode terminals 2 are formed by
cutting a metal plate transversely and longitudinally by the dicing
blade, long projections (manufacturing burrs) due to cutting do not
easily occur on the periphery of the external electrode terminals,
and the electrode flatness improves. As a result, when the
non-leaded semiconductor device is mounted on the interconnection
board 15 such as a motherboard, modular board or mounting board
using solder or the like, faulty contacts of the external electrode
terminals 2 with the lands (interconnections) 17 of the mounting
board due to projections do not easily occur, so mounting strength
is improved and mounting reliability is improved.
[0248] (6) As the partition parts (external electrode terminals)
can easily be formed by cutting one metal plate, the cost of
manufacturing the semiconductor device is reduced.
[0249] (7) In the cutting of the substrate 20, the cutting depth of
the dicing blade 22 is only the groove bases of the grooves 25, and
due to the decrease in the amount of cutting, the time required for
forming the external electrode terminals and fragmentation is
shortened.
[0250] (8) From the above (7), due to the decrease in the amount of
cutting, the dicing blade 22 has less wear, the life of the dicing
blade 22 is extended and the cost of manufacturing the
semiconductor device 1 is reduced.
[0251] (9) According to the aforesaid (1)-(8), a non-leaded
semiconductor device which has a high mounting reliability, is
compact and has large numbers of external electrode terminals, can
be manufactured economically.
[0252] According also to Embodiment 2, various modifications can be
applied as in the case of Embodiment 1, and in this case, an
identical effect to that of Embodiment 1 is obtained.
[0253] (Embodiment 3)
[0254] FIGS. 16A to 16G are cross-sectional views of steps showing
the method of manufacturing a non-leaded semiconductor device
according to another embodiment (Embodiment 3) of this invention.
In this Embodiment 3, the substrate 20 used in the manufacture of
the semiconductor device 1 has a construction wherein, unlike
Embodiment 2, the grooves 25 are provided in a checkered pattern on
the side on which the semiconductor elements are fixed. In other
words, the substrate 20 comprising the grooves 25 which was used in
Embodiment 2 is inverted.
[0255] The method of manufacturing the non-leaded semiconductor
device of Embodiment 3 will be described referring to the
cross-sectional views of the steps of FIGS. 16A to 16G. As shown in
FIG. 16A, after forming the checkered pattern of the grooves 25 on
the upper surface (front surface), the semiconductor elements 5 are
fixed to the surface where the grooves 25 are present as in
Embodiment 1 and Embodiment 2.
[0256] Next, as shown in FIG. 16C, the electrodes of the
semiconductor elements 5 are connected to the principal surface
side of the substrate, i.e., the rear surfaces of the partition
parts 4 separated from the semiconductor elements 5, by the
conductive wires 7.
[0257] Next, as shown in FIG. 16D, the resin layer 3a is formed by
an insulating resin on the principal surface of the substrate 20 by
transfer molding so as to cover the semiconductor elements 5 and
wires 7. The resin layer 3a is formed to a uniform thickness.
Further, the semiconductor elements 5 and wires 7 are covered by
the resin without leaving any gaps
[0258] Next, as shown in FIG. 16E, the external mounting plating
film 13, not shown, is formed on the rear surface of the substrate
20 (front surfaces of the partition parts 4).
[0259] Next, shown in FIG. 16F, the tape 21 is affixed as a
supporting member over the whole of the front surface of the resin
layer 3a, and the substrate 20 is then cut transversely and
longitudinally by the dicing blade 22 with the substrate 20 facing
upwards. The groove bases of the grooves 25 are cut and removed
while the dicing blade 22 is moved relatively along the extension
direction of the grooves 25. In this case also, care is taken not
cut the rear surfaces of the semiconductor elements 5 with the
dicing blade.
[0260] The substrate 20 and the resin layer 3a attached to the
substrate 20 are cut by the dicing blade 22 between the unit
substrate regions so as to perform fragmentation. Due to the
cutting of the substrate 20, the partition parts 4 become
electrically isolated partition parts 4. Further, by cutting the
resin layer 3a, the resin sealing package 3 is formed.
[0261] Next, as shown in FIG. 16G, plural non-leaded semiconductor
devices 1 are manufactured by peeling the tape 21 off the resin
sealing package 3.
[0262] Embodiment 3 has identical advantages to those of Embodiment
2. Also, in Embodiment 3, various modifications may be made as in
Embodiment 1, in which case identical advantages to those of
Embodiment 1 are obtained.
[0263] FIG. 17 to FIG. 19 are diagrams relating to the manufacture
of a semiconductor device according to a Modification 1 of
Embodiment 3. FIG. 17 is a cross-sectional view showing the dicing
state in the manufacture of the semiconductor device, FIG. 18 is a
base view of the manufactured semiconductor device, and FIG. 19 is
an enlarged cross-sectional view of part of the semiconductor
device.
[0264] Modification 1 concerns the dicing blade 22 which cuts the
groove bases of the grooves 25 of the substrate 20. The dicing
which isolates unit substrate regions from unit substrate regions
is performed by the dicing blade 22 having the same thickness as
the width of the grooves 25 as in Embodiment 2, however the dicing
which forms the partition parts 4 (external electrode terminals 2)
is performed by a dicing blade 22a which is wider (thicker) than
the groove width of the grooves 25.
[0265] In the case of Modification 1, as shown in FIG. 18 and FIG.
19, the interval between the mounting surfaces of the external
electrode terminals 2 is wider, and as a result, shorts between the
external electrode terminals 2 due to the PbSn solder which is the
bonding material used for mounting do not easily occur.
[0266] FIG. 20 and FIG. 21 are diagrams relating to the manufacture
of a semiconductor device according to a Modification 2 of
Embodiment 3. FIG. 20 is a cross-sectional view of the manufactured
semiconductor device, and FIG. 21 is an enlarged cross-sectional
view of part of the semiconductor device. In this Modification 2,
unlike Modification 1, the dicing blade which cuts the partition
parts 4 (external electrode terminals 2) is narrower (thinner) than
the groove width of the grooves 25.
[0267] In Modification 2, due to the reduced amount of cutting, the
life of the dicing blade is extended.
[0268] FIG. 22 and FIG. 23 are diagrams relating to the manufacture
of a semiconductor device according to a Modification 3 of
Embodiment 3. FIG. 22 is a schematic cross-sectional view showing
the formation of the external electrode terminals by polishing in
the manufacture of the semiconductor device, and FIG. 23 is a
schematic plan view showing the polishing of the front surface of
the substrate. In Modification 3, as shown in FIG. 23, a rotating
grinder 30 is moved in contact from one edge to the other edge of
the substrate 20, and the groove bases of the grooves 25 are
removed by polishing. To simplify the description, in FIG. 22, the
grinder 30 supported by a rotating shaft 30a is shown smaller.
[0269] Prior to this polishing, in Modification 3, after forming
the resin layer 3a by transfer molding, the tape 21 is not affixed.
Also, fragmentation is performed by dicing or laser beam
irradiation.
[0270] In Modification 3, the fragmentation of the terminals can be
performed in a short time.
[0271] FIG. 24 is a diagram showing the shape of the external
electrode terminals in the manufacture of a semiconductor device
according to a Modification 4 of Embodiment 3. In Modification 4,
grooves 31 are provided facing the resin layer 3a of the partition
part 4. The insulating resin forming the resin sealing package 3 is
introduced into these grooves 31, so the bonding strength with the
partition parts 4 (external electrode terminals 2) is improved, the
partition parts 4 (external electrode terminals 2) do not fall out
so easily from the semiconductor device 1, and product reliability
increases.
[0272] FIG. 25 is a diagram showing the shape of the external
electrode terminals in the manufacture of a semiconductor device
according to a Modification 5 of Embodiment 3. In Modification 5,
plural depressions 32 are provided in the surface facing the resin
layer 3a of the partition parts 4. The insulating resin which forms
the resin sealing package 3 is introduced into these depressions
32, so the bonding strength with the partition parts 4 (external
electrode terminals 2) is improved, the partition parts 4 (external
electrode terminals 2) do not fall out so easily from the
semiconductor device 1, and product reliability increases.
[0273] (Embodiment 4)
[0274] FIG. 26 is a cross-sectional view of steps showing the
method of manufacturing a non-leaded semiconductor device according
to another embodiment (Embodiment 4) of this invention. In
Embodiment 4, the grooves 25 are not provided on one surface of the
substrate 20 as in Embodiment 3, but are provided on both sides of
the substrate 20 so that they are facing each other. The grooves 25
are provided on both sides of the substrate 20, and the groove
bases have a predetermined thickness as mechanical strength is
required. For example, the thickness of the bases grooves 25 may be
50 .mu.m.
[0275] The method of manufacturing the non-leaded semiconductor
device of Embodiment 4 will be described referring to the
cross-sectional views of the steps of FIGS. 26A to 26G. As shown in
FIG. 26A, the semiconductor elements 5 are fixed as in Embodiment 3
to one surface of the substrate 20 wherein the grooves 25 are
provided correspondingly on both surfaces in a checkered pattern
(FIG. 26B).
[0276] Next, as shown in FIG. 26C, the electrodes of the
semiconductor elements 5 are connected to the principal surface
side of the substrate, i.e., the rear surfaces of the partition
parts 4 separate from the semiconductor elements 5, by the
conductive wires 7.
[0277] Next, as shown in FIG. 26D, the resin layer 3a is formed by
an insulating resin on the principle surface of the substrate 20 by
transfer molding so as to cover the semiconductor elements 5 and
wires 7. The resin layer 3a is formed to a uniform thickness. The
semiconductor elements 5 and wires 7 are covered by the resin so as
not to leave any gaps.
[0278] Next, as shown in FIG. 26E, the external plating film 13,
not shown, is formed on the rear surface of the substrate 20 (front
surfaces of the partition parts 4) as in Embodiment 1.
[0279] Next, as shown in FIG. 26F, the tape 21 is affixed as a
supporting member over the whole of the front surface of the resin
layer 3a, and the substrate 20 is then cut transversely and
longitudinally by the dicing blade 22 with the substrate 20 facing
upwards. The groove bases of the grooves 25 are cut and removed
while the dicing blade 22 moves relatively along the extension
direction of the grooves 25. In this case also, care is taken not
to cut the rear surfaces of the semiconductor elements 5 by the
dicing blade.
[0280] The substrate 20 and the resin layer 3a attached to the
substrate 20 are cut by the dicing blade 22 between the unit
substrate parts so as to perform fragmentation. By cutting the
substrate 20, the partition parts 4 become electrically isolated
partition parts 4. Further, due to the cutting of the resin layer
3a, the resin sealing package 3 is formed.
[0281] Next, as shown in FIG. 14G, plural non-leaded semiconductor
devices 1 are manufactured by peeling the tape 21 off the resin
sealing package 3.
[0282] Embodiment 4 has some of the advantages of Embodiment 2 and
Embodiment 3. Also, in Embodiment 4, various modifications may be
applied as in Embodiment 1, and in this case, identical advantages
to those of Embodiment 1 are obtained.
[0283] It is a characteristic feature of Embodiment 4 that, as the
outline portion on the mounting surface of the partition parts 4
(external electrode terminals 2) is determined to be a minimum by
the grooves 25, the partition parts 4 (external electrode terminals
2) can be formed in a precise shape.
[0284] FIGS. 27 to 29 are diagrams relating to the manufacture of a
semiconductor device according to a Modification 1 of Embodiment 4.
FIG. 27 is a cross-sectional view showing a dicing state, FIG. 28
is a cross-sectional view of the manufactured semiconductor device,
and FIG. 29 is an enlarged cross-sectional view of part of the
semiconductor device.
[0285] Embodiment 4 concerns the dicing blade 22 which cuts the
groove bases of the grooves 25 of the substrate 20. As shown in
FIG. 27, the dicing which isolates unit substrate regions from unit
substrate regions is performed by the dicing blade 22 having the
same thickness or about the same thickness as the width of the
grooves 25 as in Embodiment 2, however the dicing which forms the
partition parts 4 (external electrode terminals 2) is performed by
a dicing blade 22b which is wider (thicker) than the groove width
of the grooves 25.
[0286] In the case of Modification 4, the interval between adjacent
external electrode terminals 2 (partition parts 4) on the mounting
surface is wider than the groove bases, so when the non-leaded
semiconductor device is mounted by PbSn solder, adjacent partition
parts 4 (external electrode terminals 2) do not come into
electrical contact due to the PbSn solder and mounting reliability
is increased.
[0287] In Modification 1 of Embodiment 4, three rows of the
external electrode terminals 2 are provided on each side of the
semiconductor device 1. Therefore, the semiconductor device 1 can
be made even more compact, and can be provided with plural
terminals.
[0288] FIGS. 30A to 30D are cross-sectional views of steps of one
part of the method of manufacturing the semiconductor device
according to a Modification 2 of Embodiment 4. In Modification 2 of
Embodiment 4, in FIGS. 30A to 30D, only provision of the substrate
20 (FIG. 30A), filling of the grooves 25 on the surface where the
semiconductor elements are attached by the filling material 33
(FIG. 30B), fixing of the semiconductor elements (FIG. 30C) and
wire bonding (FIG. 30D) are shown. The grooves 25 may for example
be filled by an insulating epoxy resin by the screen printing
method. The front surface of the filling material 33 approximately
coincides with the front surface of the substrate 20 so as not to
interfere with the fixing of the semiconductor elements.
[0289] By filling the grooves 25 on the surface where the
semiconductor elements 5 are fixed with the filling material 33,
the rear surfaces of the semiconductor elements 5 are always
blocked even when the external electrode terminals 2 (partition
parts 4) are formed by dicing, so entry of moisture into the
grooves 25 is prevented and the reliability of the semiconductor
device is increased.
[0290] (Embodiment 5)
[0291] FIG. 31 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a method according to another
embodiment (Embodiment 5) of this invention, and FIG. 32 is a base
plan view of the semiconductor device. Embodiment 5 has a stand-off
construction wherein a predetermined gap is left between the rear
surfaces of the semiconductor elements 5 and the interconnection
board during mounting, by removing the partition parts 4 inside the
three rows of the external electrode terminals 2 arranged along the
sides of the semiconductor device 1. The semiconductor device 1
having the structure shown in FIG. 31 can be manufactured by
providing a rectangular hole which is a stand-off in the center
part of the unit substrate parts of the substrate 20, and then
performing chip bonding, wire bonding, transfer molding, dicing and
fragmentation. FIG. 32 is a base plan view of the semiconductor
device 1, there being no partition parts 4 (external electrode
terminals 2) in the center part.
[0292] Due to this stand-off construction, even if there is a
foreign body on the mounting board during mounting, it does not
easily interfere as there is a space underneath the semiconductor
element 5.
[0293] (Embodiment 6)
[0294] FIG. 33 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a method according to another
embodiment (Embodiment 6) of this invention, and FIG. 34 is a base
plan view of the semiconductor device. Embodiment 6 is a stand-off
construction as in the case of Embodiment 5. In this embodiment,
the substrate region surface requiring stand-off in the substrate
20 is made thinner by half-etching. In this construction also,
during mounting as in the case of Embodiment 5, if a foreign body
comes to be facing the half-etched partition parts 4, the foreign
body does not easily interfere.
[0295] (Embodiment 7)
[0296] FIG. 35 to FIG. 38 are diagrams relating to a method of
manufacturing a non-leaded semiconductor device according to
another embodiment (Embodiment 7) of this invention. FIG. 35 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 36 is a perspective view showing the planar
arrangement of the semiconductor device, FIG. 37 is a base plan
view of the semiconductor device, and FIG. 38 is an enlarged
cross-sectional view of part of the semiconductor device.
[0297] In the method of manufacturing the semiconductor device
according to Embodiment 7, the external electrode terminals 2 are
formed by removing the bases of the grooves 25 at intervals of
several grooves apart. In this example, the groove bases of the
grooves 25 one groove apart are removed. This technique has the
advantage that the size and pitch of the external electrode
terminals 2 can be freely selected.
[0298] (Embodiment 8)
[0299] FIG. 39 to FIG. 41 are diagrams relating to a method of
manufacturing a non-leaded semiconductor device according to
another embodiment (Embodiment 8) of this invention. FIG. 39 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 40 is a perspective view showing the planar
arrangement of the semiconductor device, and FIG. 41 is a base plan
view of the semiconductor device.
[0300] Embodiment 8 is an example wherein three rows of the
partition parts 4 adjacent each other including the outermost row
along the sides of the semiconductor device 1 are used as the
external electrode terminals 2, and the fourth row of predetermined
partition parts 4 from the outside to inside are used as the
external electrode terminals 2. Specifically, as shown here, a part
A electrically connects the third row of predetermined partition
parts 4 and fourth row of predetermined partition parts 4. This may
for example be manufactured by a construction wherein the part A
adjoins parts of adjacent partition parts 4 without etching. In the
figure, one of the partition parts 4 underneath the semiconductor
element 5 is electrically connected to one of the partition parts 4
outside the semiconductor element 5, but the partition parts 4
underneath the semiconductor element 5 may be further electrically
connected, or other partition parts 4 outside the semiconductor
element 5 may also be electrically connected to the partition parts
4 underneath the semiconductor element 5.
[0301] According to Embodiment 8, the partition part 4 directly
underneath the semiconductor element 5 may also be used as one of
the external electrode terminals 2. As a result, the degree of
freedom of interconnection layout design on the interconnection
board for mounting is increased.
[0302] (Embodiment 9)
[0303] FIG. 42 to FIG. 44 are diagrams relating to a method of
manufacturing a non-leaded semiconductor device according to
another embodiment (Embodiment 9) of this invention. FIG. 42 is a
schematic cross-sectional view of the substrate used in the method
of manufacturing the semiconductor device, FIG. 43 is a
cross-sectional view along a line A-A in FIG. 42, and FIG. 44 is a
cross-sectional view along a line B-B in FIG. 42.
[0304] In Embodiment 9, through holes 40 are provided at substrate
points where the grooves 25 intersect transversely and
longitudinally. By providing the through holes 40 at the substrate
points where the grooves 25 intersect, dicing parts are less, the
cutting time can be shortened, and the time required to form the
partition parts (external electrode terminals) can also be
shortened. Further, manufacturing burrs in the intersection parts
cut by the dicing blade occur even less frequently.
[0305] In FIG. 43 and FIG. 44, connecting parts 41 which join
adjacent partition parts 4 are also shown by shading. In FIG. 42,
the connecting parts 41 are shaded.
[0306] (Embodiment 10)
[0307] FIG. 45 to FIG. 48 are diagrams relating to a method of
manufacturing a non-leaded semiconductor device according to
another embodiment (Embodiment 10) of this invention. FIG. 45 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 46 is a perspective view showing the planar
arrangement of the semiconductor device, FIG. 47 is a base plan
view of the semiconductor device, and FIG. 48 is a cross-sectional
view of some of the steps in the method of manufacturing the
semiconductor device.
[0308] In Embodiment 10, the partition parts 4 to which the
semiconductor element 5 are fixed are integrated to form a chip
fixing partition part 42 of a size such that the semiconductor
element 5 can easily be fixed to it. This improves the mechanical
strength of the part supporting the semiconductor element 5, and
improves heat dissipation properties by effectively transmitting
the heat produced by the semiconductor element 5.
[0309] This example can be manufactured by, for example, using the
substrate 20 in Embodiment 4, forming a structure (chip fixing
partition part 42) wherein parts of adjacent partition parts 4 are
joined without etching between the parts it is desired to connect
even after dicing the partition parts 4.
[0310] FIGS. 48A to 48C are cross-sectional views of some of the
steps in the method of manufacturing the semiconductor device
according to Embodiment 10. As shown in FIGS. 48A to 48C, only
provision of the substrate 20 (FIG. 48A), fixing of the
semiconductor element (FIG. 48B) and wire bonding (FIG. 48C) are
shown. As shown in FIG. 48A, a structure (chip fixing partition
part 42) is formed wherein parts of adjacent partition parts 4 are
joined without etching between the parts it is desired to connect
even after dicing the partition parts 4.
[0311] (Embodiment 11)
[0312] FIG. 49 to FIG. 51 are diagrams relating to a method of
manufacturing a non-leaded semiconductor device according to
another embodiment (Embodiment 11) of this invention. FIG. 49 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 50 is a perspective view showing the planar
arrangement of the semiconductor device, and FIG. 51 is a
cross-sectional view of some of the steps in the method of
manufacturing the semiconductor device.
[0313] Embodiment 11 is a technical concept identical to that of
Embodiment 8 wherein the partition parts 4 directly underneath the
semiconductor element 5 are also used as the external electrode
terminals 2. As shown in FIGS. 51A to 51D, only provision of the
substrate (FIG. 51A), wire bonding which electrically connects the
partition parts 4 (FIG. 51B), fixing of the semiconductor element
(FIG. 51C) and wire bonding (FIG. 51D) are shown.
[0314] In Embodiment 11, as shown in FIG. 51A, after providing the
substrate 20 which has the grooves 25 on both surfaces, on the
surface (principal surface) of the substrate 20 to which the
semiconductor elements 5 are fixed, as shown in FIG. 51B, regions
which function as the external electrode terminals 2 separate from
the regions where the semiconductor elements 5 are fixed, are
electrically connected by conductive wires 43 to predetermined
partition parts 4 to which the semiconductor elements 5 are
fixed.
[0315] Next, the semiconductor elements 5 are fixed to the
substrate 20 by insulating adhesive 9 enclosing part of the wires
43 (FIG. 49). In this state, the wires 43 are not visible, and are
therefore shown in FIG. 49 and FIG. 50. In Embodiment 11, as shown
in FIG. 50, the partition parts 4 separate from the semiconductor
element 5 are electrically connected by the wires 43, so that they
may be used as the external electrode terminals 2.
[0316] Next, as shown in FIG. 51D, wire bonding is performed, and
the semiconductor device 1 shown in FIG. 49 and FIG. 50 is
manufactured by performing the sequence of steps as in Embodiment
4.
[0317] In Embodiment 11 also, the external electrode terminals 2
may be formed underneath the semiconductor elements 5 as in
Embodiment 8. As result, the degree of freedom of design of the
interconnection pattern of the mounting substrate is increased.
[0318] (Embodiment 12)
[0319] FIG. 52 is a cross-sectional view of a non-leaded
semiconductor device manufactured by a method according to another
embodiment (Embodiment 12) of this invention, and FIGS. 53A to 53C
is a cross-sectional view of some of the steps showing the method
of manufacturing the semiconductor device. In FIGS. 53A to 53C,
only provision of the substrate (FIG. 53A), fixing of the
semiconductor elements (FIG. 53B) and wire bonding (FIG. 53C) are
shown.
[0320] In Embodiment 12, as shown in FIG. 53A, in the substrate 20
which has the grooves 25 provided on both surfaces, the grooves 25
in the regions where the semiconductor elements 5 are fixed, are
filled with a filling material 44 prior to fixing the semiconductor
elements, as shown in FIG. 53B, the semiconductor elements 5 are
fixed to predetermined positions, and as shown in FIG. 53C, the
electrodes of the semiconductor elements 5 are connected to the
partition parts 4 by the conductive wires 7. Subsequently, the
steps in the manufacturing method of Embodiment 11 are followed in
sequence to manufacture the semiconductor device 1 shown in FIG.
52.
[0321] According to Embodiment 12, by filling the groove parts 25
in the regions where the semiconductor elements 5 are fixed with
the filling material 44, the rear surfaces of the semiconductor
elements 5 are definitely obstructed even when the external
electrode terminals 2 (partition parts 4) are formed by dicing,
etc., so seepage of water through the grooves 25 is prevented, and
the reliability of the semiconductor device is increased. It may be
noted that the filling material 44 and adhesive 9 may be used in
conjunction to fill the grooves 25 in these regions.
[0322] (Embodiment 13)
[0323] FIG. 54 is a perspective view showing a planar arrangement
of a non-leaded semiconductor device manufactured by a method
according to another embodiment (Embodiment 13) of this
invention.
[0324] In Embodiment 13, the semiconductor device 1 is manufactured
by fixing the semiconductor element to the substrate 20 so that the
sides of the semiconductor element intersect in the grooves 25
which are provided transversely and longitudinally perpendicular to
each other. By so doing, more of the partition parts 4 which can be
used as the external electrode terminals 2 are obtained.
[0325] (Embodiment 14)
[0326] FIG. 55 is a cross-sectional view of steps illustrating the
method of manufacturing the semiconductor device according to
another embodiment (Embodiment 14) of this invention. Embodiment 14
is an example wherein the resin layer 3a is formed by a method
other than transfer molding, such as for example a dispenser.
[0327] There is no particular limitation on the substrate 20, but
an example will be described where the semiconductor device is
manufactured using the substrate 20 having the grooves 25 on both
surfaces. As shown in FIG. 55A, the substrate 20 having the grooves
25 facing each other in corresponding positions in a checkered
pattern on both surfaces is first provided, and the semiconductor
elements 5 are then fixed to one surface of the substrate 20 as in
Embodiment 4 (FIG. 55B).
[0328] Next, as shown in FIG. 55C, the electrodes of the
semiconductor elements 5 are connected to predetermined partition
parts 4 separate from the semiconductor elements 5 by the
conductive wires 7.
[0329] Next, as shown in FIG. 55D, a predetermined amount of an
insulating resin liquid 46 such as an epoxy resin is allowed to
flow onto the upper surface of the substrate 20 from a dispenser
nozzle 45, so as to cover the semiconductor elements 5 and wires 7.
It is necessary to employ a means whereby the semiconductor
elements 5 and wires 7 are completely covered by the resin, and the
resin does not flow out from the edges of the substrate 20. In
other words, the viscosity of the resin is suitably selected, and
although not shown in the diagram, a stopper of predetermined
height may for example be placed to form a dam on the peripheral
surface of the substrate 20 so that the resin does not flow from
the substrate 20 to the outside. In the figure, only one of the
nozzles 45 is shown, but in practice, the resin may be supplied
from a dispenser having plural nozzles.
[0330] Next, as shown in FIG. 55E, the insulating resin liquid 46
is baked under predetermined conditions so as to form the resin
layer 3a covering the semiconductor elements 5 and wires 7. In the
resin layer 3a, the semiconductor elements 5 and wires 7 are
present so the surface is undulating, but the semiconductor
elements 5 and wires 7 are covered by the resin without leaving any
gaps. To avoid undulations on the surface, after supplying the
insulating resin liquid 46 from the dispenser, it may be flattened
by using a tool such as a squeezer or the like. Also, the
insulating resin liquid 46 may be a UV curing resin.
[0331] Next, as shown in FIG. 55E, the external mounting plating
film 13, not shown (in the figure, only the symbol is shown) is
formed on the rear surface of the substrate 20.
[0332] Next, as shown in FIG. 55F, the tape 21 is affixed as a
supporting member to the resin layer 3a, and the substrate 20 is
cut transversely and longitudinally by two dicing blades with the
substrate 20 facing upwards. Specifically, the independent
partition parts 4 are formed by cutting the groove bases of the
grooves 25 by the dicing blade 22b which is narrower (thinner) than
the grooves 25, and the areas between unit substrate regions are
cut by the dicing blade 22 which has approximately the same
thickness as the groove width of the grooves 25 (fragmentation).
The cutting between these unit substrate regions is also in part of
the grooves 25. Due to the cutting of the resin layer 3a, the resin
sealing package 3 is formed.
[0333] Next, as shown in FIG. 55G, plural non-leaded semiconductor
devices 1 are formed by peeling the tape off the resin sealing body
3.
[0334] Embodiment 14 has some of the advantages of Embodiment 3.
The resin may be supplied from a device other than the
dispenser.
[0335] (Embodiment 15)
[0336] FIG. 56 to FIG. 63 are diagrams relating to the method of
manufacturing the semiconductor device according to another
embodiment (Embodiment 15) of this invention. In Embodiment 15, the
fixing of the semiconductor element to one surface of the
substrate, the connection of the electrodes of the semiconductor
device to predetermined positions on the substrate by conductive
wires, one-side molding to cover the semiconductor elements, the
cutting of the substrate to form the semiconductor device and the
removal of unnecessary substrate are identical to the aforesaid
embodiments.
[0337] However, in Embodiment 15, there are differences in that
when the semiconductor device is manufactured, unit substrate parts
are formed by rectangular tabs fixed to the semiconductor element,
and leads extending parallel from predetermined sides of the tabs
and extending from adjacent tabs, or plural leads connected to the
substrate frame. The leads have wire connection regions in two or
more positions along their length.
[0338] Next, the method of manufacturing the semiconductor device
will be described referring to FIG. 60. First, as shown in FIG.
60(a), the substrate 20 is provided. The substrate 20 has the
pattern shown in FIG. 61. The materials and thickness of this
substrate 20 are effectively identical to those of the aforesaid
embodiments. Also, the pattern may be manufactured by selectively
etching or stamping the substrate 20.
[0339] The substrate 20 comprises a rectangular (lengthwise)
substrate frame 50, and unit substrate parts arranged transversely
and longitudinally inside this substrate frame 50. The rectangular
regions including the unit substrate parts are referred to as unit
substrate regions. The unit substrate regions comprise a
rectangular tab 51 which fixes the semiconductor element 5, and
leads 52 extending parallel from predetermined sides of this tab 51
and extending from adjacent tabs 51, or plural leads connected to
the substrate frame 50. Therefore, all of the leads 52 are parallel
to the substrate frame 50. A plating film 11 is formed in at least
a part of the principal surface of the substrate 20 to which
semiconductor elements and wires are connected (FIG. 59).
[0340] There is no particular limitation on the substrate 20 shown
in FIG. 61, but a total of 21 unit substrate parts may be aligned
in 3 columns and 7 rows so that 21 semiconductor devices can be
manufactured from one of the substrates 20. In FIG. 61, the
semiconductor element 5 is already fixed, and the electrodes 6 of
the semiconductor element 5 are connected to predetermined
positions (wire bonding positions) of the leads 52 by the wires
7.
[0341] Next, as shown in FIG. 60B and FIG. 61, the semiconductor
element 5 is fixed to the tabs on one surface (the principal
surface) of the substrate 20 via the adhesive 9 (FIG. 59). The
adhesive 9 may be an insulating adhesive or a conductive adhesive.
In Embodiment 1, an example is described where the tabs 51 are
larger than the semiconductor element 5.
[0342] Next, as shown in FIG. 60C and FIG. 61, the electrodes of
the semiconductor element 5 are connected to predetermined wire
bonding positions on the leads 52 by the conductive wires 7 (FIG.
56 and FIG. 57). In Embodiment 1, two regions for fixing the wires
are provided in the length direction of the leads 52. These two
positions are marked by dotted lines in FIG. 61 for clarity.
[0343] Next, as shown in FIG. 60D, the semiconductor elements 5 and
wires 7 are covered by an insulating resin (resin layer 3a) by
transfer molding to seal the package. When this transfer molding is
performed, the tab parts 51 of the substrate 20 are made to adhere
to the surface of the lower die of a molding die by vacuum suction
nozzles 53. This state is shown in FIG. 63. In FIG. 60(d), the
nozzles 53 are shown schematically.
[0344] As shown in FIG. 63, the substrate 20 is die clamped between
a lower die 55 and upper die 56 of a molding die 54. The region
inside the substrate frame 50 of the substrate 20 is situated
inside a cavity 57, which is a rectangular depression provided on
the parting surface of the upper die 56, and the semiconductor
elements 5 and wires 7 are situated inside the cavity 57. In
transfer molding, resin is pressure-injected from a gate and the
cavity 57 is filled with resin, but there is a risk that resin will
flow onto the lower surface of the tabs 51, i.e., the surface of
the tabs 51 in contact with the lower die 55. Hence, vacuum suction
is applied to the tabs 51 as shown by the arrow using the nozzles
53 provided on the lower die 55 as shown schematically in FIG. 62.
In this way, the tabs 51 are kept in adhesive contact with the flat
parting surface of the lower die 55 and seepage of resin is
prevented.
[0345] Due to this, the resin layer 3a of constant thickness
specified by the shape of the cavity 57 is formed on the principal
surface side of the substrate 20 without resin adhering to the
lower surface of the tabs 51 and leads 52 (See FIG. 60D).
[0346] Next, as shown in FIG. 60E, the external mounting plating
film 13, not shown (in the figure, only the symbol is shown, FIG.
59), is formed on the rear surface of the substrate 20.
[0347] Next, as shown in FIG. 60F, the tape 21 is affixed as a
supporting member to the resin layer 3a, and the substrate 20 is
cut transversely and longitudinally by a dicing blade with the
substrate 20 facing upwards.
[0348] The cutting by the dicing blade 22 is performed transversely
in a direction perpendicular to the leads 52. Cutting is performed
at the parts of the leads 52 attached to the tabs 51, the
boundaries of the wire bonding positions, the boundaries between
unit substrate parts (unit substrate regions) and unit substrate
parts (unit substrate regions), and the boundaries between the unit
substrate parts (unit substrate regions) and the frame body 50.
[0349] In the cutting at the boundaries between unit substrate
parts (unit substrate regions) and unit substrate parts (unit
substrate regions), and the cutting at the boundaries between the
unit substrate parts (unit substrate regions) and the frame body
50, the resin layer 3a is cut simultaneously. Due to cutting of the
resin layer 3a, the semiconductor device 1 is manufactured, and the
resin layer 3a covering the semiconductor elements 5 and wires 7
becomes the resin sealing package 3. In the cutting of the resin
layer 3a, care is taken not to completely cut the tape 21. As this
cutting takes place in the two directions XY, it is preferred that
after cutting in one direction, the parts are still held by the
tape 21.
[0350] Next, as shown in FIG. 60G, plural non-leaded semiconductor
devices 1 are manufactured by peeling the tape 21 off the resin
sealing body 3. FIG. 56 to FIG. 59 are diagrams relating to the
semiconductor devices 1 manufactured in this way. FIG. 56 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 57 is a plan view of the non-leaded semiconductor
device showing the external outline of the resin sealing without
the resin sealing, FIG. 58 is a base plan view of the semiconductor
device, and FIG. 59 is an enlarged cross-sectional view of part of
the semiconductor device.
[0351] On the mounting surface side of the semiconductor device 1,
as shown in FIG. 58, the square tab 51 is situated in the middle,
and the external electrode terminals 2 are aligned in two rows
along each side of the tab 51.
[0352] In the semiconductor device 1 according to Embodiment 15,
during mounting, only the external electrode terminals 2 may be
fixed, or the external electrode terminals 2 and tabs 51 may be
fixed, to the interconnection board.
[0353] In the manufacture of the non-leaded semiconductor device 1,
Embodiment 15 also has some of the advantages of the preceding
embodiments.
[0354] Also, in Embodiment 15, both ends of the leads 52 formed on
the external electrode terminals 2 are supported, and as it is not
a cantilever construction, it does not float up during molding.
Therefore, resin also does not adhere to the mounting surfaces of
the external electrode terminals 2.
[0355] In Embodiment 15, the leads 52 had two wire bonding
positions, but there may be plural positions. Specifically, if
further division into plural pieces is possible by the dicing
blade, plural external electrode terminals 2 can also be formed
from one of the leads 52.
[0356] (Embodiment 16 )
[0357] FIG. 64 to FIG. 69 are diagrams relating to the method of
manufacturing the semiconductor device according to another
embodiment (Embodiment 16 ) of this invention. In Embodiment 16,
the unit substrate parts of Embodiment 15 are formed by the tabs 51
and leads 52, so the four corners of the rectangular unit substrate
regions are not used efficiently. This embodiment therefore
provides a means of also using the four corners efficiently.
[0358] In Embodiment 16, the substrate 20 shown in FIG. 68 is used.
To clarify the unit substrate regions, FIG. 69 shows a partial
enlargement. FIG. 68 and FIG. 69 are plan views showing the state
where chip bonding and wire bonding have been completed.
[0359] In Embodiment 16, when the substrate 20 is patterned, the
two edges are connected to the areas at the four corners of the
unit substrate regions directly to the substrate frame 50 or leads
52, or via the supplementary pieces 60, and plural corner leads 61
having plural wire connecting regions are formed in their length
direction. The wires 7, which are connected to the electrodes of
the semiconductor element, are also connected to the wire
connecting regions of the corner leads 61, and when the leads are
selectively removed, the corner leads 61 are split between the wire
connecting regions and the supplementary pieces 60 are removed. In
FIG. 68, the positions described are not clearly visible, so
symbols are omitted except for the substrate 20 and substrate frame
50.
[0360] The semiconductor device 1 is manufactured by identical
steps to those of Embodiment 15 using the substrate 20 shown in
FIG. 68. When the leads 52 are cut, cutting of the corner leads 61
takes place by moving the dicing blade in a straight line to form
the external electrode terminals 2. The supporting pieces 60 are
narrower than the width of the dicing blade, and as they are
aligned in the travel direction of the dicing blade, they are cut
and removed by the dicing blade.
[0361] As a result, the semiconductor device 1 shown in FIG. 64 to
FIG. 67 is manufactured. FIG. 64 is a cross-sectional view of the
semiconductor device, FIG. 65 is a perspective view showing the
planar arrangement of the semiconductor device, FIG. 66 is a base
plan view of the semiconductor device, and FIG. 67 is an enlarged
cross-sectional view of part of the semiconductor device. As shown
in FIG. 65 and FIG. 66, the external electrode terminals 2 are
formed also at the four corners of the unit substrate regions.
[0362] In Embodiment 16, both ends of the leads 52 and corner leads
61 formed on the external electrode terminals 2 are supported, and
as it is not a cantilever construction, it does not float up during
molding. Therefore, resin does not adhere to the mounting surfaces
of the external electrode terminals 2.
[0363] In the manufacture of the non-leaded semiconductor device 1,
Embodiment 16 has some of the advantages of the preceding
embodiments.
[0364] (Embodiment 17 )
[0365] FIG. 70 to FIG. 72 are diagrams relating to the method of
manufacturing the semiconductor device according to another
embodiment (Embodiment 17 ) of this invention. FIG. 70 is a
cross-sectional view of the semiconductor device, FIG. 71 is a
perspective view showing the planar arrangement of the
semiconductor device, and FIG. 72 is a base plan view of the
semiconductor device.
[0366] As shown in FIG. 71, Embodiment 17 is an example of
application to the manufacture of a semiconductor device where the
tabs 51 are small tabs relative to the semiconductor element 5.
This small tab construction is widely applicable to different sizes
of the semiconductor element 5, and has universality as the
substrate 20.
[0367] (Embodiment 18)
[0368] FIG. 73 to FIG. 75 are diagrams relating to the method of
manufacturing a semiconductor device according to another
embodiment (Embodiment 18) of this invention. FIG. 73 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 74 is a perspective view showing the planar
arrangement of the semiconductor device, and FIG. 75 is a base plan
view of the semiconductor device.
[0369] Embodiment 18 is an example of application to the
manufacture of a semiconductor device having a small tab
construction as in Embodiment 17 . In Embodiment 18, the external
electrode terminals 2 are arranged in three rows along the sides of
the resin sealing package 3.
[0370] In Embodiment 18, the number of the external electrode
terminals 2 can be further increased.
[0371] (Embodiment 19)
[0372] FIG. 76 to FIG. 78 are diagrams relating to the method of
manufacturing the semiconductor device according to another
embodiment (Embodiment 19) of this invention. FIG. 76 is a
cross-sectional view of the manufactured non-leaded semiconductor
device, FIG. 77 is a perspective view showing the planar
arrangement of the semiconductor device, and FIG. 78 is a base plan
view of the semiconductor device.
[0373] Embodiment 19 is an example wherein the tab surface (rear
surface) to which the semiconductor element 5 is not fixed, is
formed thinner than the leads 52 on the periphery by etching to a
predetermined thickness, and a resin layer 3b is also formed on the
tab surface to which the semiconductor element 5 is not fixed when
the resin layer 3a is formed by transfer molding.
[0374] In the semiconductor device 1 of Embodiment 19, during
mounting, the resin layer 3b is interposed between the tab 51 and
interconnection board, so the tab 51 can be electrically
insulated.
[0375] (Embodiment 20)
[0376] FIG. 79 to FIG. 82 are diagrams relating to the method of
manufacturing the semiconductor device according to another
embodiment (Embodiment 20) of this invention. FIG. 79 is a
cross-sectional view of the semiconductor device, FIG. 80 is a
perspective view showing the planar arrangement of the
semiconductor device, FIG. 81 is a base plan view of the
semiconductor device, and FIG. 82 is an enlarged cross-sectional
view of part of the semiconductor device Embodiment 20, which is a
Modification 3 of Embodiment 3, may be applied to the method of
forming the partition parts 4 by polishing the undersurface of the
substrate 20. Specifically, in this case, when the substrate 20 is
patterned, the grooves 25 are not provided in the region to which
the semiconductor element 5 is fixed. In this way, the bonding
surface area of the semiconductor element 5 increases, the bonding
strength increases, and heat which is generated from the
semiconductor element 5 can be rapidly dissipated to the outside
from the partition parts 4 which have a large surface area.
[0377] Instead of polishing the lower surface of the substrate 20,
the partition parts 4 may be formed by etching.
[0378] (Embodiment 21)
[0379] FIG. 83 is a schematic plan view of a semiconductor device
manufactured by a method according to another embodiment
(Embodiment 21) of this invention.
[0380] In Embodiment 21, the tab 51 is made one step higher in the
example of Embodiment 15, and during transfer molding, the resin
layer 3b is formed on the rear surface of the tab 51. In Embodiment
21, three external electrode terminals 2 are formed from one of the
leads 52 by cutting the lead 52 at four positions.
[0381] Also in the case of the semiconductor device 1 of Embodiment
21, during mounting, the resin layer 3b is interposed between the
tab 51 and interconnection board, so the tab 51 can be electrically
insulated.
[0382] (Embodiment 22)
[0383] FIG. 84 to FIG. 97 are diagrams relating to the nonleaded
semiconductor device according to another embodiment (Embodiment
22) of this invention. In Embodiment 22, a chip fixing partition
part 42 which is slightly larger than the semiconductor element 5
is provided as in Embodiment 10, and the substrate 20 has the
grooves 25 provided on the chip fixing surface side.
[0384] In the semiconductor device 1 of Embodiment 22, the front
surfaces of the external electrode terminals 2 project beyond the
front surface of the resin layer forming the resin sealing package
3 (stand-off construction).
[0385] Further, a notch 26 is provided as a direction identifying
part on one side of the chip fixing partition part 42 formed by a
single partition part (partition region) 4. As the chip fixing
partition part 42 is exposed on the base surface of the resin
sealing package 3, i.e., the surface on which it is mounted
(mounting surface), the notch 26 is visible and can identify the
directionality of the square semiconductor device 1. The
identifying effect can also be obtained by beveling a corner of the
chip fixing partition part 42.
[0386] Hereafter, the semiconductor device 1 of Embodiment 22 and
its method of manufacture will be described referring to the
drawings. FIG. 84 to FIG. 87 are diagrams relating to the
construction of the semiconductor device, and FIG. 88 to FIG. 94
are diagrams relating to the method of manufacturing the non-leaded
semiconductor device.
[0387] As shown in FIG. 84, the lower surface of the chip fixing
partition part 42 is exposed on the lower surface of the resin
sealing body 3, and as shown in FIG. 86, the external electrode
terminals 2 are arranged in three rows on the outer periphery of
the square chip fixing partition part 42.
[0388] A notch 26 is provided on one side of the chip fixing
partition part 42. The chip fixing partition part 42 is a partition
part (partition region) 4 of large surface area wherein the
partition part (partition region) 4 forming the external electrode
terminals 2 partly does not have the grooves 25. The chip fixing
partition part 42 to which the semiconductor element 5 is fixed by
the adhesive 9 (FIG. 87) is slightly larger than the semiconductor
element 5. The electrodes on the front surface of the semiconductor
element 5 and the external electrode terminals 2 are electrically
connected by the conductive wires 7 in the resin sealing package 3
(FIG. 85, FIG. 87).
[0389] A particular feature of this invention, as shown in FIG. 87
and FIG. 84, is that the external electrode terminals 2 and chip
fixing partition part 42 project slightly from the lower face
(mounting surface) of the resin sealing package. This projection is
due to a plating film 27 formed on the front surfaces of the
external electrode terminals 2 and chip fixing partition part 42
after etching the groove bases of the grooves 25 in the manufacture
of the semiconductor device. A projection length z may for example
be from several 10 several 100 .mu.m. Due to this projection of the
external electrode terminals 2 (stand-off construction), the
external electrode terminals 2 groove can be connected to the
interconnections (lands) of the mounting board without fail when
the semiconductor device 1 is mounted on the mounting board.
[0390] The semiconductor device 1 according to Embodiment 22 is
manufactured via the steps shown in FIGS. 88A to 88G. In the
manufacture of the semiconductor device 1 of Embodiment 22, the
substrate 20 shown in FIG. 89 is used. The substrate 20 is
rectangular, and guide holes 35a, 35b, 35c, 35d, 35e are provided
along its long edge. These guide holes 35a, 35b, 35c, 35d, 35e are
used as guide holes for transport and position-determining on the
assembly line for the substrate 20. Unit substrate parts 37 are
disposed in two rows along the short edge and 12 rows along the
long edge of the substrate 20. The unit substrate parts 37 finally
all become the semiconductor devices 1. A groove 25a having widths
e, f is provided outside the rectangular region in which the unit
substrate parts 37 are disposed. The outside of this groove 25a is
a frame part 38.
[0391] FIG. 90 is a schematic enlarged plan view showing the unit
substrate part 37, and FIG. 91 is an enlarged cross-sectional view
showing the unit substrate part 37. As shown in FIG. 90, the notch
26 is provided on one side of the square partition part 4 which is
the chip fixing partition part 42. Also, partition parts 4 which
are the external electrode terminals 2 are arranged in three rows
on the outer periphery of the chip fixing partition part 4. The
grooves 25 are formed between the partition parts 4.
[0392] In the method of manufacturing the semiconductor device, as
shown in FIG. 88A, chip bonding is performed, and the semiconductor
element 5 is fixed to the partition part 4 which is the chip fixing
partition part 42.
[0393] Next, as shown in FIG. 88A, wire bonding is performed, and
the partition parts 4 which are the external electrode terminals 2
are connected to the electrodes of the semiconductor element 5 by
the conductive wires 7.
[0394] Next, as shown in FIG. 88C, one-side molding is performed
using transfer molding, and the semiconductor element 5 and wires 7
are covered in the insulating resin sealing package 3. FIG. 92 and
FIG. 93A are partial cross-sectional views showing the substrate 20
which is one-side molded. As shown in these diagrams, the outer
circumferential edge of the resin sealing package 3 does not extend
to the frame part 38, but finishes midway along the groove 25a.
This is so that the frame part 38 can be removed by etching,
described later.
[0395] Next, as shown in FIG. 88D, the partition parts 4 are formed
as the external electrode terminals 2 and chip fixing partition
part 42 by removing the groove bases of the grooves 25, by
immersing the substrate 20 in an etching solution 28. FIG. 93B is a
partial enlarged cross-sectional view showing the resin sealing
package 3 after etching. Due to the etching, the base (lower
surface) of the resin sealing package 3 which is filled up to the
bases of the grooves 25, 25a, is exposed. The substrate 20 no
longer maintains a plate shape, and the frame part 38, external
electrode terminals 2 and chip fixing partition part 42 are
separated from each other by the etching. If a considerable force
is applied to the frame part 38 the frame part 38 easily separates
from the resin sealing package 3. Also in the method wherein the
substrate 20 is polished to separate the partition parts 4, the
frame body 38 can be separated from the resin sealing package
3.
[0396] Next, as shown in FIG. 88E, the plating film 27 is formed by
plating on the front surfaces of the external electrode terminals 2
and chip fixing partition part 42 exposed on the lower surface of
the resin sealing package 3. The plating may for example be PbSn
plating, and the thickness of the plating film 27 is of the order
of several 10 to several 100 .mu.m. The base surface of the plated
external electrode terminals 2 and chip fixing partition part 42
project further than the lower surface of the resin sealing package
3 exposed by etching (stand-off construction).
[0397] FIG. 93C is a partial enlarged cross-sectional view showing
the resin sealing package 3 after plating. After plating, the resin
sealing package 3 can be removed from the frame body 38 by applying
a force to the frame body 38. FIG. 94 is a partial enlarged
cross-sectional view showing the resin sealing package 3 with the
frame body removed.
[0398] Next, as shown in FIG. 88F, cutting is performed, the tape
21 is affixed to the surface of the resin sealing package 3 which
is the rear surface relative to the surface on which the chip
fixing partition part 42 and the external electrode terminals 2 are
present, and the resin sealing package 3 is cut transversely and
longitudinally by the dicing blade 22 to fragment the unit
substrate parts. The dot-and-dash line parts in FIG. 93C and FIG.
94 are the parts where the resin sealing package 3 is cut. As can
be seen from these diagrams, metal is not present in the cut parts,
and there is only the resin layer part forming the resin sealing
package 3. Therefore, the life of the dicing blade used for cutting
is extended.
[0399] Next, as shown in FIG. 88G, the tape 21 is peeled off the
separated resin sealing package 3 to manufacture plural
semiconductor devices 1.
[0400] In Embodiment 22, in the chip bonding of FIG. 88A, the chip
fixing surface of the partition parts 4 which is the chip fixing
partition part 42 is flat, and as it has no grooves, an adhesive
used for fixing the semiconductor element does not flow into these
grooves, so the amount of adhesive used is less, and the cost of
manufacturing the semiconductor device is reduced. Also, as it is
flat, chip bonding is more stable.
[0401] In the wire bonding of FIG. 88B, as the rear surface (lower
surface) of the substrate 20 is flat, the partition part 4 which is
the chip fixing partition part 42 to which the semiconductor
element 5 is fixed, and the partition parts which are the external
electrode terminals 2, can be held by vacuum adsorption with vacuum
adsorption pads 29, so the quality of the wire bonding is stable.
Specifically, due to the fixing of the substrate by vacuum
adsorption, ultrasonic wire bonding can be performed without
fail.
[0402] In the semiconductor device 1 of this embodiment, as the
chip fixing partition part 42 is exposed on the mounting surface of
the resin sealing package 3, the heat generated by the
semiconductor element 5 can be rapidly dissipated to the outside by
the chip fixing partition part 42, which provides for stable
operation of the semiconductor device 1.
[0403] When the partition parts 4 are formed as the external
electrode terminals 2 or chip fixing partition part 42 by removing
the groove bases of the grooves 25, a method is used wherein the
rear surface of the substrate 20 is removed to a certain thickness
by polishing or etching. In the example of the diagram, the
separation of the partition parts 4 is effected by etching (FIG.
88D). Also, the plating in FIG. 88E (e.g., external plating by
PbSn, etc.) may conveniently be performed by a printing plate
wherein the plating film thickness can be easily controlled. By
this plating method, the stand-off height can be precisely
controlled. A standoff construction can be formed also by etching,
by forming an etching mask on the rear surface of the part of the
substrate 20 corresponding to the chip fixing partition part or
external electrode terminals.
[0404] FIG. 95 to FIG. 97 are diagrams relating to a nonleaded
semiconductor device in a modification of Embodiment 22. FIG. 95 is
a schematic cross-sectional view of the nonleaded semiconductor
device, FIG. 96 is a perspective view showing the planar
arrangement of the external electrode terminals, and FIG. 97 is a
base plan view of the semiconductor device. In this modification,
the chip fixing partition part 42 is smaller than the semiconductor
element 5. According to this construction, the substrate used for
manufacturing the semiconductor device can also be used to
manufacture semiconductor elements of different sizes, and
therefore the universality of the substrate is increased.
[0405] (Embodiment 23)
[0406] FIG. 98 is a cross-sectional view of the steps involved in
the method of manufacturing a non-leaded semiconductor device
according to another embodiment (Embodiment 23) of this invention,
and FIG. 99 is an enlarged cross-sectional view showing a part of
the non-leaded semiconductor device.
[0407] Embodiment 23 is an example wherein, in Embodiment 22, the
semiconductor device 1 is manufactured using the substrate 20 which
has the grooves 25 and grooves 25a, not shown, in corresponding
positions on the front and rear surfaces. FIGS. 98A to 98G in the
manufacturing process are identical to FIGS. 88A to 88G. Hence, the
semiconductor device of this invention can be manufactured even
when grooves are not provided on only one surface.
[0408] (Embodiment 24)
[0409] FIG. 100 to FIG. 105 are diagrams relating to the nonleaded
semiconductor device according to another embodiment (Embodiment
24) of this invention. FIG. 100 to FIG. 103 are diagrams relating
to the manufacture of the non-leaded semiconductor device, FIG. 100
is a cross-sectional view of the semiconductor device 1, FIG. 101
is a perspective view of the semiconductor device 1, FIG. 102 is a
base plan view of the semiconductor device 1, and FIG. 103 is a
partial enlarged cross-sectional view.
[0410] FIGS. 104A to 104G are cross-sectional views of steps
showing the method of manufacturing the semiconductor device, FIGS.
105A and 105B are schematic views showing the unit substrate part
37 of the substrate 20 used in the manufacture of the semiconductor
device, FIG. 105A is a perspective plan view, and FIG. 105B is a
cross-sectional view.
[0411] In Embodiment 24, as shown in FIG. 105, in the unit
substrate part 37 of the substrate 20, there is a depression 71
without an edge on the rear surface (mounting surface) of the chip
fixing partition part 42. The manufacture of the semiconductor
device according to this example shown in FIGS. 104A to 104G is
identical to that of Embodiment 22 shown in FIGS. 88A to 88G,
except that the separation of the partition parts 4 is achieved by
polishing using a grinder 30 (FIG. 104D) instead of etching.
[0412] As shown in FIGS. 105A and 105B, by providing the depression
71 on the rear surface of the chip fixing partition part 42, the
surface area to be polished is largely reduced, the life of the
grinder 30 is extended, the polishing time is shortened and the
manufacturing cost is reduced.
[0413] When the device becomes a product, even if a foreign object
adheres to the chip fixing partition part 42 and has adhered to the
depression 71 separate from the edge, in the case of a small
foreign object, it no longer causes interference with the mounting
board, so the semiconductor device 1 can be mounted without
fail.
[0414] When the isolation of the partition parts 4 is performed by
etching, in the case of this embodiment, as the depression 71 is
present on the rear surface of the chip fixing partition part 42,
the amount of the substrate part dissolved can be controlled by
etching, by selecting the size of the depression 71. only the edge
of the depression 71 need be etched, and the flatness of the edge
of the rear surface of the chip fixing partition part 42 can be
maintained.
[0415] (Embodiment 25)
[0416] FIG. 106 to FIG. 110 are diagrams relating to a nonleaded
semiconductor device according to another embodiment (Embodiment
25) of this invention. FIG. 106-FIG. 109 are diagrams relating to
the manufacture of the non-leaded semiconductor device, FIG. 106 is
a schematic cross-sectional view of the semiconductor device, FIG.
107 is a perspective view showing the planar arrangement of
external electrode terminals, FIG. 108 is a base plan view of the
semiconductor device, and FIG. 109 is an enlarged cross-sectional
view of part of the semiconductor device. FIG. 110 is a descriptive
diagram describing the relation between the interconnections of the
mounting board of the non-leaded semiconductor device and the
external electrode terminals of the non-leaded semiconductor device
of Embodiment 25.
[0417] In Embodiment 25, as shown in FIG. 107 and FIG. 108, the
external electrode terminals 2 in Embodiment 22 are circular.
Consequently, a gap u between the edges of the external electrode
terminals 2 in the diagonal direction is wider than in the case
where they are rectangular. As a result, as shown in FIG. 110, in
the mounting board (interconnection board) 15 on which the
semiconductor device 1 is mounted, interconnections 16 can be
disposed also between the lands 17 for mounting the external
electrode terminals 2, there is more freedom in the layout of
interconnections on the mounting board 15, and design of
interconnections is easier. In FIG. 110, 72 is a through hole 72,
and it is a part filled by a conductor which connects upper and
lower interconnections on the interconnection board 15. Thus, by
making the external electrode terminals 2 circular, the pitch
between adjacent external electrode terminals 2 in the diagonal
direction is wider, so the interconnections 16 and through hole 72
can also be disposed between the external electrode terminals
2.
[0418] The shape of the external electrode terminals 2 is not
necessarily circular, and can be any shape which allows a wider
pitch between diagonally adjacent external electrode terminals.
[0419] In the non-leaded semiconductor devices described in
Embodiment 22 to Embodiment 25, at least part of the lateral
surface of the external electrode terminals 2 can be supported by
the resin sealing package 3, also, by performing a step which
separates the external electrode terminals 2 by etching which
causes less damage to the external electrode terminals 2 than
dicing, the external electrode terminals 2 are prevented from
falling out of the resin sealing package 3.
[0420] In particular, the external electrode terminals 2 shown in
FIG. 87 have a part of narrower width (part of width B) than the
width of their upper surface, and as the part of width B is
supported by the resin sealing package 3, the external electrode
terminals 2 are definitively prevented from falling out of the
resin sealing package 3.
[0421] When the grooves 25 are formed in the substrate 20, the
external electrode terminals 2 having the part of narrower width
can be formed by controlling the etching rate on the upper surface
of the substrate 20 to be slower than the etching rate in the part
of width B. To control the etching rate, wet etching is
effective.
[0422] By using wet etching wherein the substrate 20 is immersed in
an etching solution with an etching mask on the upper surface of
the substrate, the refresh rate of etching solution in the vicinity
of the substrate upper surface can be made slower than the refresh
rate of the etching solution in the vicinity of the part of width
B, and by using the difference in etching rates due to the
difference in the refresh rates of the etching solution, the
electrode shapes shown in FIG. 87 can easily be formed.
[0423] This invention as conceived by the Inventor has been
described in detail based on the embodiments, but it should be
understood that the invention is not limited by these embodiments,
various modifications being possible within the scope and spirit of
the appended claims.
[0424] In the embodiments, an example was described where this
invention was applied to the manufacture of a QFN semiconductor
device, but this invention may also be applied for example to the
manufacture of a SON semiconductor device in which case an
identical effect is obtained.
[0425] Typical advantages of the invention as disclosed in this
application may be summarized as follows. This invention is not
limited to a construction providing all the effects described, and
also includes constructions which provide some of the effects
described.
[0426] (1) A compact non-leaded semiconductor device can be
provided.
[0427] (2) A non-leaded semiconductor device having plural external
electrode terminals can be provided
[0428] (3) A method of manufacturing a non-leaded semiconductor
device having at least two rows of external electrode terminals
along the sides of the semiconductor device, can be provided.
[0429] (4) A method of manufacturing a non-leaded semiconductor
device wherein the external electrode terminals are formed to a
high precision of shape and dimensions, can be provided.
[0430] (5) A non-leaded semiconductor device having a high mounting
reliability, can be provided.
* * * * *