U.S. patent application number 09/792444 was filed with the patent office on 2002-08-29 for cleaning of multicompositional etchant residues.
This patent application is currently assigned to Applied Materials, Inc.. Invention is credited to Huang, Tuo-Chuan, Jiang, Anbei, Sun, Zhi-Wen.
Application Number | 20020117472 09/792444 |
Document ID | / |
Family ID | 25156898 |
Filed Date | 2002-08-29 |
United States Patent
Application |
20020117472 |
Kind Code |
A1 |
Sun, Zhi-Wen ; et
al. |
August 29, 2002 |
Cleaning of multicompositional etchant residues
Abstract
A substrate processing apparatus has a chamber with a substrate
transport to transport a substrate onto a substrate support in the
chamber, a gas supply to provide a gas in the chamber, a gas
energizer to energize the gas, and a gas exhaust to exhaust the
gas. A controller operates one or more of the substrate support,
gas supply, gas energizer, and gas exhaust, to set etching process
conditions in the chamber to etch a plurality of substrates,
thereby depositing etchant residues on surfaces in the chamber. The
controller also operates one or more of the substrate support, gas
supply, gas energizer, and gas exhaust, to set cleaning process
conditions in the chamber to clean the etchant residues. The
cleaning process conditions comprise a volumetric flow ratio of
O.sub.2 to CF.sub.4 of from about 1:1 to about 1:40.
Inventors: |
Sun, Zhi-Wen; (San Jose,
CA) ; Jiang, Anbei; (Sunnyvale, CA) ; Huang,
Tuo-Chuan; (Cupertino, CA) |
Correspondence
Address: |
APPLIED MATERIALS, INC.
Patent Department
P.O. Box 450A
Santa Clara
CA
95052
US
|
Assignee: |
Applied Materials, Inc.
|
Family ID: |
25156898 |
Appl. No.: |
09/792444 |
Filed: |
February 23, 2001 |
Current U.S.
Class: |
216/68 ; 134/1.1;
134/21; 134/22.1; 156/345.48; 216/60; 216/75; 216/79;
257/E21.226 |
Current CPC
Class: |
H01J 37/321 20130101;
H01J 37/32449 20130101; H01J 37/32935 20130101; H01L 21/02046
20130101 |
Class at
Publication: |
216/68 ; 216/60;
216/75; 216/79; 134/1.1; 134/21; 134/22.1; 156/345.48 |
International
Class: |
H01L 021/3065; C23F
001/00 |
Claims
What is claimed is:
1. A substrate processing apparatus comprising: a chamber
comprising a substrate transport to transport a substrate onto a
substrate support in the chamber, a gas supply to provide a gas in
the chamber, a gas energizer to energize the gas, and a gas exhaust
to exhaust the gas; a controller to operate the substrate support,
gas supply, gas energizer, and gas exhaust, to set (i) etching
process conditions in the chamber to etch a plurality of
substrates, thereby depositing etchant residues on surfaces in the
chamber, and (ii) cleaning process conditions in the chamber to
clean the etchant residues, the process conditions comprising a
volumetric flow ratio of O.sub.2 to CF.sub.4 of from about 1:1 to
about 1:40.
2. An apparatus according to claim 1 wherein the controller is
adapted to set etching process conditions to etch first substrates
comprising a first material and second substrates comprising a
second material.
3. An apparatus according to claim 2 wherein the etching process
conditions comprise providing a first etchant gas to etch the first
substrates and providing a second etchant gas to etch the second
substrates.
4. An apparatus according to claim 2 wherein the first and second
materials comprise one or more of silicon, silicon oxide, polycide,
polysilicon, tungsten silicide, titanium silicide and resist.
5. An apparatus according to claim 1 wherein the controller is
adapted to control the operation of the chamber to process one or
sacrificial substrates in the chamber after etching of the
plurality of substrates.
6. An apparatus according to claim 5 wherein the controller is
adapted to provide an energized gas in the chamber to etch the
sacrificial substrates and deposit a sacrificial coating on
surfaces in the chamber.
7. An apparatus according to claim 1 wherein the controller is
adapted to set a volumetric flow ratio of O.sub.2 to CF.sub.4 of
from about 1:2 to about 1:8.
8. An apparatus according to claim 1 wherein the cleaning process
conditions comprise an RF power level applied to an antenna about
the chamber, and the controller is adapted to apply the RF power
level to the antenna at from about 200 to about 1500 Watts.
9. An apparatus according to claim 1 wherein the cleaning process
conditions comprise a bias power level applied to an electrode in
the chamber, and the controller is adapted to apply a bias power
level to the electrode of less than about 40 Watts.
10. An apparatus according to claim 1 wherein the cleaning process
conditions comprise a pressure of the cleaning gas in the chamber,
and the controller is adapted to maintain the pressure of the
cleaning gas in the chamber at from about 5 mTorr to about 40
mTorr.
11. An apparatus according to claim 1 comprising a detector adapted
to monitor an intensity of a radiation emission at a wavelength of
about 4405 .ANG. from the energized gas in the chamber and send a
signal to the controller, and wherein the controller is adapted to
determine a cleaning process endpoint from the signal.
12. A method of processing substrates in a chamber, the method
comprising: (a) etching a plurality of substrates in the chamber,
thereby depositing etchant residues on surfaces in the chamber; and
(b) cleaning the etchant residues by (i) introducing a cleaning gas
comprising O.sub.2 and CF.sub.4 into the chamber, the volumetric
flow ratio of O.sub.2 to CF.sub.4 being from about 1:1 to about
1:40, (ii) energizing the cleaning gas, and (iii) exhausting the
cleaning gas from the chamber.
13. A method according to claim 12 wherein (a) comprises etching
first substrates comprising a first material and second substrates
comprising a second material.
14. A method according to claim 13 comprising providing a first
etchant gas to etch the first substrates and a second etchant gas
to etch the second substrates.
15. A method according to claim 13 wherein the first and second
materials comprise one or more of silicon, silicon oxide, polycide,
polysilicon, tungsten silicide, titanium silicide and
photoresist.
16. A method according to claim 12 comprising processing one or
more sacrificial substrates in the chamber after etching of the
plurality of substrates.
17. A method according to claim 16 comprising providing an
energized gas in the chamber to etch the sacrificial substrates and
deposit a sacrificial coating on surfaces in the chamber.
18. A method according to claim 12 wherein the volumetric flow
ratio of O.sub.2 to CF.sub.4 is from about 1:2 to about 1:8.
19. A method according to claim 12 wherein (b) comprises applying
an RF power level of from about 200 to about 1500 Watts to an
antenna about the chamber.
20. A method according to claim 12 wherein (b) comprises applying a
bias power level of less than about 40 Watts to an electrode in the
chamber.
21. A method according to claim 12 wherein (b) comprises
maintaining the pressure in the chamber at from about 5 mTorr to
about 40 mTorr.
22. A method according to claim 12 wherein (b) further comprises
monitoring an intensity of a radiation emission from the energized
gas in the chamber at a wavelength of about 4405 .ANG. to determine
a cleaning process endpoint.
23. A substrate etching apparatus comprising: a chamber comprising
a substrate transport to transport a substrate onto a substrate
support in the chamber, a gas supply to provide a gas in the
chamber, a gas energizer to energize the gas, and a gas exhaust to
exhaust the gas; a controller to operate the substrate support, gas
supply, gas energizer, and gas exhaust, to set (i) etching process
conditions in the chamber to etch a plurality substrates, thereby
depositing etchant residues on surfaces in the chamber (ii)
sacrificial substrate processing conditions to process one or more
sacrificial substrates in the chamber, thereby depositing a
sacrificial coating on surfaces in the chamber, and (ii) cleaning
process conditions in the chamber to clean the etchant residues and
sacrificial coating, the process conditions comprising a volumetric
flow ratio of O.sub.2 to CF.sub.4.
24. An apparatus according to claim 23 wherein the controller is
adapted to set etching process conditions to etch first substrates
comprising a first material ans second substrates comprising a
second material.
25. An apparatus according to claim 24 wherein the etching process
conditions comprise providing a first etchant gas to etch the first
substrates, and a second etchant gas to etch the second
substrates
26. An apparatus according to claim 23 wherein the controller is
adapted to set sacrificial substrate processing conditions to
provide an energized gas in the chamber to etch the sacrificial
substrates.
27. An apparatus according to claim 26 wherein the sacrificial
substrates comprise silicon.
28. An apparatus according to claim 23 wherein the controller is
adapted to set a volumetric flow ratio of O.sub.2 to CF.sub.4 of
from about 1:1 to about 1:40.
29. A method of etching substrates in a chamber, the method
comprising: (a) etching a plurality substrates in the chamber,
thereby depositing etchant residues on surfaces in the chamber; (b)
processing one or more sacrificial substrates in the chamber,
thereby depositing a sacrificial coating on surfaces in the
chamber; and (c) cleaning the etchant residues and sacrificial
coating by (i) introducing a cleaning gas comprising O.sub.2 and
CF.sub.4 into the chamber, (ii) energizing the cleaning gas, and
(iii) exhausting the cleaning gas from the chamber.
30. A method according to claim 29 wherein (a) comprises etching
first substrates comprising a first material and etching second
substrates comprising a second material.
31. A method according to claim 30 comprising providing a first
etchant gas to etch the first substrates and a second etchant gas
to etch the second substrates.
32. A method according to claim 29 wherein (b) comprises the
providing an energized gas in the chamber to etch the sacrificial
substrates.
33. A method according to claim 32 wherein the sacrificial
substrates comprise silicon.
34. A method according to claim 29 comprising setting a volumetric
flow ratio of O.sub.2 to CF.sub.4 of from about 1:1 to about 1:40.
Description
BACKGROUND
[0001] The present invention relates to the cleaning of etchant
residues formed in the etching of substrates.
[0002] When an energized gas is used to process a substrate in a
chamber, for example to etch the substrate, etchant residues are
often deposited on internal surfaces of the chamber. The deposited
etchant residues may adversely affect the substrate processing
operations conducted in the chamber. For example, the etchant
residues can corrode the surfaces of the chamber and its internal
components, requiring frequent replacement of the components, and
thereby increasing chamber downtime. The accumulated etchant
residues can also flake off from the chamber surfaces and
contaminate substrates being etched in the chamber. Thus, the
etchant residues needs to be periodically cleaned off the chamber
surfaces.
[0003] In conventional cleaning processes, a cleaning gas energized
by RF or microwave energy is provided in the chamber to clean the
etchant residues. The cleaning gas composition and other process
parameters are tailored to clean the particular etchant residue
composition that is generated during the etching process. For
example, a conventional cleaning process to clean a chamber having
silicon containing etchant residues that are generated by the
etching of silicon containing substrate material in the chamber,
may use a cleaning gas composition tailored to clean the silicon
containing etchant residues.
[0004] However, conventional cleaning processes are generally not
very efficient at cleaning etchant residues composed of multiple
layers having different chemical compositions, such as those
generated in foundry etching processes. In foundry etching, the
same chamber is often used to etch a number of different types of
substrate materials, thereby often generating layers of etchant
residues having a variety of different types of compositions which
deposit upon one another on the surfaces in the chamber.
Conventional cleaning processes do not efficiently clean these
multi-layer etchant residues because they are tailored to clean the
single composition etching residues formed in a simpler etching
process. Thus, when conventional cleaning process are used to clean
foundry etch chambers, the chamber is often cleaned non-uniformly
because the cleaning gas is more effective at cleaning certain
compositions of etchant residues. The conventional cleaning process
can also result in overcleaning and resultant erosion of the
foundry etch chamber.
[0005] Thus, it is desirable to have a cleaning process capable of
cleaning a chamber after the etching of a number of different types
of substrates in the chamber. It is further desirable to have a
cleaning process capable of cleaning multi-layer etchant residues
without excessive erosion of the underlying chamber surfaces.
SUMMARY
[0006] A substrate processing apparatus comprising a chamber
comprising a substrate transport to transport a substrate onto a
substrate support in the chamber, a gas supply to provide a gas in
the chamber, a gas energizer to energize the gas, and a gas exhaust
to exhaust the gas, a controller to operate the substrate support,
gas supply, gas energizer, and gas exhaust, to set etching process
conditions in the chamber to etch a plurality of substrates,
thereby depositing etchant residues on surfaces in the chamber, and
cleaning process conditions in the chamber to clean the etchant
residues, the process conditions comprising a volumetric flow ratio
of O.sub.2 to CF.sub.4 of from about 1:1 to about 1:40.
[0007] A method of processing substrates in a chamber, the method
comprising etching a plurality of substrates in the chamber,
thereby depositing etchant residues on surfaces in the chamber, and
cleaning the etchant residues by introducing a cleaning gas
comprising O.sub.2 and CF.sub.4 into the chamber, the volumetric
flow ratio of O.sub.2 to CF.sub.4 being from about 1:1 to about
1:40, energizing the cleaning gas, and exhausting the cleaning gas
from the chamber.
[0008] A substrate processing apparatus comprising a chamber
comprising a substrate transport to transport a substrate onto a
substrate support in the chamber, a gas supply to provide a gas in
the chamber, a gas energizer to energize the gas, and a gas exhaust
to exhaust the gas, a controller to operate the substrate support,
gas supply, gas energizer, and gas exhaust, to set etching process
conditions in the chamber to etch a plurality of substrates,
thereby depositing etchant residues on surfaces in the chamber,
sacrificial substrate processing conditions to process one or more
sacrificial substrates in the chamber, thereby depositing a
sacrificial coating on surfaces in the chamber, and cleaning
process conditions in the chamber to clean the etchant residues and
sacrificial coating, the process conditions comprising a volumetric
flow ratio of O.sub.2 to CF.sub.4.
[0009] A method of processing substrates in a chamber, the method
comprising etching a plurality of substrates in the chamber,
thereby depositing etchant residues on surfaces in the chamber,
processing one or more sacrificial substrates in the chamber,
thereby depositing a sacrificial coating on surfaces in the
chamber, and cleaning the etchant residues and sacrificial coating
by introducing a cleaning gas comprising O.sub.2 and CF.sub.4 into
the chamber, energizing the cleaning gas, and exhausting the
cleaning gas from the chamber.
DRAWINGS
[0010] These and other features, aspects, and advantages of the
present invention will become better understood with regard to the
following description, appended claims, and accompanying drawings
which illustrate examples of the invention, where:
[0011] FIG. 1 is a schematic sectional side view of an exemplary
version of an etching chamber according to the present
invention;
[0012] FIG. 2 is a graph of the cleaning rate of etchant residues
comprising CF.sub.x, as a function of increasing O.sub.2 flow
rate;
[0013] FIG. 3 is a graph of the cleaning rate of etchant residues
comprising SiO.sub.x, as a function of increasing O.sub.2 flow
rate;
[0014] FIG. 4 is graph of the cleaning rate of first and second
distributions of etchant residues comprising SiO.sub.x and for
increasing gas pressure;
[0015] FIG. 5 is a graph of the etch rate of Al.sub.2O.sub.3 for
increasing gas pressure;
[0016] FIG. 6 is a graph of the cleaning rate of etchant residues
comprising SiO.sub.x, for increasing bias power level applied to an
electrode in the chamber;
[0017] FIG. 7 is graph of the relative intensity of a radiation
emission emitted by an energized cleaning gas at 4405 .ANG. for
increasing cleaning process time;
[0018] FIG. 8 is a graph of the cleaning rate of etchant residues
deposited about a process zone and exhaust region of an etching
chamber, for increasing cleaning process time; and
[0019] FIG. 9 is an illustrative block diagram of a controller
comprising a computer readable program according to the present
invention.
DESCRIPTION
[0020] An etching chamber 106 comprises, for example, a decoupled
plasma source (DPS) chamber, schematically illustrated in FIG. 1,
and which is commercially available from Applied Materials Inc.,
Santa Clara, Calif. The etching chamber 106 may be attached to a
mainframe unit that contains and provides electrical, plumbing,
substrate transport and other support functions for the chamber
106. Exemplary mainframe units compatible with the illustrative
embodiment of the chamber 106 are currently commercially available
as the Precision 5000.TM. systems from Applied Materials, Inc., of
Santa Clara, Calif. The embodiment of the etching chamber 106
illustrated in FIG. 1 is provided only to illustrate the invention,
and should not be used to limit the scope of the invention or its
equivalents to the exemplary embodiments provided herein.
[0021] Generally, the etching chamber 106 comprises walls 107
typically fabricated from metal or ceramic materials. Metals
commonly used to fabricate the chamber 106 include aluminum,
anodized aluminum, "HAYNES 242," "Al-6061," "SS 304," "SS 316," and
INCONEL, of which anodized aluminum is preferred. The wall 107 may
comprise sidewalls 114, a bottom wall 116, and a ceiling 118. The
ceiling 118 may comprise a substantially arcuate shape, or in other
versions, the ceiling 118 may comprise a domed, substantially flat,
or multi-radius shaped portion. The chamber 106 typically comprises
a volume of at least about 5,000 cm3, and more preferably from
about 10,000 to about 50,000 cm3. In operation, gas is introduced
into the chamber 106 through a gas supply 130. The gas supply 130
may include a gas source 138 and a gas distributor 137, the gas
distributor 137 comprising conduits 136 having flow control valves
134 to control the flow of gas into the chamber 106 and gas outlets
142. In one version, the gas outlets 142 may be arranged about a
periphery of the substrate 104, as shown in FIG. 1. A gas exhaust
144 may exhaust spent gas and etchant byproducts from the chamber
106. The gas exhaust 144 may comprise a pumping channel 146 to
receive the spent gas, a throttle valve 150 to control the pressure
of gas in the chamber 106, and one or more exhaust pumps 152. The
gas exhaust 144 may also contain a system for abating undesirable
gases.
[0022] The gas is energized to process the substrate 104 by a gas
energizer 154 that couples energy to the gas in the process zone
108 of the chamber 106 (as shown) or in a remote zone upstream from
the chamber 106 (not shown). In one version, the gas energizer 154
comprises an antenna 156 comprising one or more inductor coils 158
which may have a circular symmetry about the center of the chamber
106. Typically, the antenna 156 comprises solenoids having from
about 1 to about 20 turns. A suitable arrangement of solenoids is
selected to provide a strong inductive flux linkage and coupling to
the process gas. When the antenna 156 is positioned near the
ceiling 118 of the chamber 106, the adjacent portion of the ceiling
may be made from a dielectric material, such as silicon dioxide,
which is transparent to RF or electromagnetic energy. An antenna
power supply 155 provides, for example, RF power to the antenna 156
at a frequency of typically about 50 KHz to about 60 MHz, and more
typically about 13.56 MHz; and at a power level of from about 100
to about 5000 Watts.
[0023] In one version, the gas energizer 154 may also or
alternatively comprise process electrodes (not shown) that may be
used to energize or further energize the process gas. Typically,
the process electrodes include one electrode (not shown) in a wall,
such as a sidewall 114 or ceiling 118 of the chamber 106 that may
be capacitively coupled to another electrode, such as an electrode
in the support 110 below the substrate 104. Generally, the
electrodes may be electrically biased relative to one another by an
electrode voltage supply (not shown) that includes an AC voltage
supply for providing an RF bias voltage. The RF bias voltage may
comprise frequencies of about 50 kHz to about 60 MHz, and is
preferably about 13.56 MHz, and the power level of the RF bias
current is typically from about 50 to about 3000 watts. The gas
energizer 154 may also comprise a microwave source (not shown) to
energize the gas in the chamber 106 or in a remote chamber (also
not shown).
[0024] In operation, a substrate transport 111, such as for example
a robotic arm and associated robotics, transports the substrate 104
onto the substrate support 110 in the chamber 106. The support 110
may comprise an electrostatic chuck 170 which comprises a
dielectric body 174 which at least partially covers an electrode
178 and which may include a substrate receiving surface 180. The
electrode 178 may also serve as one of the process electrodes
discussed above. The electrode 178 may be capable of generating an
electrostatic charge for electrostatically holding the substrate
104 to the support 110 or electrostatic chuck 170. A power supply
182 provides the chucking voltage to the electrode 178.
[0025] The chamber 106 may also comprise a detector 200 for
monitoring a process, such as a cleaning process, in the chamber
106 and sending a signal to a chamber controller 300. The detector
200 should be positioned to detect a radiation emission from, for
example, an energized gas in the chamber 106. Also, the detector
200 should have the sensitivity required to accurately detect the
changes in the attribute of the radiation emission. For example,
the detector 200 should have the sensitivity required to determine
when an endpoint value of the intensity of the radiation emission
has been obtained. In one version, a suitable detector 200 may
comprise a sensor 201, such as for example a spectrometer, charge
coupled device, or photodiode mounted to detect radiation passing
through a window 202 formed in a wall 107 of the chamber 106 that
is permeable to radiation of the desired wavelengths. The detector
200 may also comprise a monochrometer or optical filter, which may
be used to select the desired wavelength of radiation to be
monitored.
[0026] A number of different processes may be performed in the
chamber 106. The different processes may be performed to etch
different materials on different substrates 104, using process
parameters and etchant gas compositions which are selected
according to the type of material to be etched. For example,
multiple etching processes may be performed to etch silicon
containing materials, such as for example polycide, polysilicon,
tungsten silicide, titanium silicide; carbon containing materials
such as for example low k dielectric materials; metal containing
materials; or resist materials such as for example photoresist
which may be patterned to a desirable pattern configuration which
is to be etched in the underlying layers; on different batches of
substrates 104. The substrates 104 can be silicon wafers, compound
semiconductors, or dielectric materials such as silicon oxide or
aluminum oxide. The multiple etching processes performed may
comprise, for example, polysilicon, polisilicide, or photoresist
etching processes. The multiple etching processes may generate a
variety of different types of etchant residues which deposit as
layers on the internal surfaces 115 in the chamber 106 to form a
multi-layer etchant residue on the chamber surfaces 115. The
different etching processes are often performed to etch the
different etchant residues.
[0027] The multiple etching processes may include a number of
processes, for example, a first etching process to etch a first
material on one or more first substrates 104, and a second etching
process to etch a second material on one or more second substrates
104. The first etching process may be used to first substrates 104
comprising a first material such as tungsten silicide. In the first
etching process, the substrate 104 is etched by placing a first
substrate 104 on a substrate support 110, introducing a first
etchant gas into the etching chamber 106, and energizing the
etchant gas by, for example, applying power to an antenna about the
chamber 106 and/or an electrode 178 in the chamber 106. To etch
tungsten silicide, the first etchant gas typically comprises one or
more of Cl.sub.2, O.sub.2, and N.sub.2; and the gas is energized by
applying an RF power level of about 1200 Watts to the antenna 156
about the chamber 106 and a bias power level of about 120 Watts to
the electrode 178 in the chamber 106. After a batch of the first
substrates 104 are etched, a second etching process may be used to
etch a second material, such as for example, silicon, on a batch of
second substrates 104. In the second etching process, the second
substrates 104 are placed in the chamber 106, a second etchant gas
is introduced into the etching chamber 106, and the gas is
energized by applying power to the antenna 156 and electrode 178 in
the chamber 106. To etch silicon oxide, the second etchant gas may
include one or more of CF4, HBr, Cl.sub.2, and O.sub.2; and may be
energized by applying an RF power level of about 750 Watts to the
antenna 156 and a bias power level of about 70 Watts to the
electrode 178.
[0028] The multiple etching processes conducted in the etching
chamber 106 generate a variety of different types of etchant
residues which deposit as successive layers on the internal
surfaces 115 in the chamber 106. For example, in the first etching
process, silicon-containing etchant residues such as SiO.sub.x, may
be generated by the reaction of the tungsten silicide material on
the substrates 104 with the energized etchant gas; and in the
second etching process, carbon-containing etchant residues, such as
polymeric CF.sub.x containing residues, may be formed by the
decomposition of the carbon-containing CF.sub.4 etchant gas. The
compositionally different residues deposit as successive layers on
one another to form a multi-layer process residue on the chamber
surfaces.
[0029] The different types of etchant residues formed in the
different etching processes, may also form a complex distribution
pattern of etchant residue dispersed about the chamber 106
depending upon the types of etching processes performed in the
chamber. For example, certain etching processes result in the
increased deposition of etchant residues in a process zone 108 of
the chamber 106, in which a number of substrates 104 are etched,
whereas other etching processes may generate increased residue
deposition about an exhaust region of the chamber 106, such as a
pumping channel 146 of the gas exhaust 144. Thus, the etching of
multiple different substrates 104 in the chamber 106 may result in
the non-uniform deposition of different types of etchant residues
across the internal surfaces 115 in the chamber 106.
[0030] A cleaning process is performed to remove the multi-layer
etchant residues generated in the multiple etching processes. The
cleaning process may generally comprise introducing a cleaning gas
into the chamber 106 and energizing the cleaning gas, either within
the chamber 106 or in a remote energizing chamber 106, and
selecting process parameters, such as cleaning gas composition,
pressure and power levels, to uniformly clean a distribution of
etchant residues in the chamber. The cleaning process is capable of
cleaning the different types of etchant residues compositions which
may be generated in the multiple etching processes at good cleaning
rates and without excessive corrosion of the internal surfaces 115
in the chamber 106. The cleaning process may also be capable of
cleaning the etchant residues deposited in different regions in the
chamber 106, such as the process zone 108 or the gas exhaust 144,
without undercleaning or overcleaning the regions. The cleaning
process may also be performed to reduce contamination of subsequent
substrates 104 processed in the chamber 106 and also to inhibit the
corrosion of surfaces 115 in the chamber 106 by etchant
residues.
[0031] In the cleaning process, a cleaning gas comprising O.sub.2
and CF.sub.4 are provided to clean the chamber. The oxygen
containing gas is capable of cleaning carbon containing etchant
residue, such as for example CF.sub.x, which may be generated by
etching a substrate with a carbon containing gas such as CF.sub.4,
by reacting with the residues to form volatile fluorine and
CO.sub.x species which may be exhausted from the chamber 106. The
fluorine containing CF.sub.4 gas is capable of cleaning silicon
containing etchant residue, such as for example SiO.sub.x by
forming volatile residues comprising SiF.sub.x which are also
exhausted from the chamber 106. The flow rate of the oxygen
containing gas and the flow rate of the fluorine containing gas is
regulated to provide a volumetric flow ratio of O.sub.2 to CF.sub.4
that is capable of providing uniform cleaning of the different
types of etchant residues generated in multiple etching processes.
The volumetric flow ratio of the oxygen containing gas to the
fluorine containing gas is also selected such that different types
of etchant residues are cleaned at good cleaning rates.
[0032] The cleaning ability of a cleaning gas comprising O.sub.2
and CF.sub.4 is demonstrated in FIGS. 2 and 3. These figures show
the cleaning rates of etchant residues comprising CF.sub.x and
SiO.sub.x materials, respectively, for increasing flow rates of an
oxygen containing gas comprising O.sub.2 added to a fluorocarbon
gas comprising 100 sccm of CF.sub.4 to form the cleaning gas. The
rate of cleaning the CF.sub.x containing residues, as shown in FIG.
2, increases substantially linearly as the O.sub.2 flow rate is
increased. Thus, increasing the O.sub.2 flow rate increases the
cleaning rate for the cleaning of etchant residues comprising
CF.sub.x. However, FIG. 3 also demonstrates that good cleaning
rates of etchant residues comprising SiO.sub.x are obtained only
within a certain range of the O.sub.2 flow rate. The SiO.sub.x
cleaning rate increases until the O.sub.2 flow rate reaches about
20 sccm, which is equivalent to a volumetric flow ratio of O.sub.2
to CF.sub.4 of about 1:5, and then decreases. Thus, these graphs
show that in order to provide good cleaning rates for multiple
layers of different compositions of etchant residues, such as for
example the silicon and carbon containing etchant residues
SiO.sub.x and CF.sub.x, respectively, the volumetric flow ratio of
the oxygen containing gas O.sub.2 to the fluorocarbon gas CF.sub.4
should be within a good volumetric flow ratio range, such as the
range of from about 1:1 to 1:40, and even from about 1:2 to about
1:8, and even about 1:5.
[0033] The gas pressure during the cleaning process may also be
selected to further enhance cleaning of the different compositions
of etchant residues formed in the multiple etching processes. Good
cleaning rates were obtained for gas pressures in the range of from
about 5 to about 40 mTorr, and even about 10 mTorr. The cleaning
rates for etchant residues comprising SiO.sub.x within this range
of pressures are shown in FIG. 4. In this Figure, the cleaning rate
of two different distributions of SiO.sub.x containing etchant
residues are shown for increasing gas pressure. In the first
distribution, the etchant residues were deposited mostly on the
surfaces in the process zone 108 which surrounds the energized
etchant gas formed in the etching process, such as the surfaces of
the ceiling 118 and sidewalls 114 in the chamber 106 . In the
second distribution, the etchant residues were formed about the
exhaust region 145 of the chamber 106 which is further away from
the process zone 108 and the energized etchant gas, such as on the
surfaces of the pumping channel 146 and bottom wall 116. The
cleaning rates of both the first and second distributions are about
the same indicating that the residues are uniformly cleaned off
from all the regions of the chamber 106. In particular, at a gas
pressure of about 10 mTorr, substantially identical cleaning rates
were provided for the first and second distributions and without
overcleaning or undercleaning.
[0034] The chamber pressure during the cleaning process may also be
selected to reduce the corrosion of the chamber surfaces 115 by the
energized cleaning gas. FIG. 4 shows the etch rate of a chamber
surface material, Al.sub.2O.sub.3, for increasing pressure in a
chamber cleaning process. FIG. 4 demonstrates that the etch rate of
the Al.sub.2O.sub.3, and hence the corrosion of chamber surfaces
115 is reduced for increased gas pressures. It is believed that
this results because at higher gas pressures, the plasma is not as
highly energized. However, gas pressures which are too high may
lead to the non-uniform cleaning of different distributions of
process residues in the chamber 106, as described above. Thus, the
range of from about 5 mTorr to about 40 mTorr, and more preferably,
about 10 mTorr, was found to provide good chamber cleaning rates
with reduced corrosion of the chamber surfaces 115.
[0035] The cleaning gas is energized in the chamber 106 at levels
that allow effective cleaning of the multiple layer etchant
residues generated in the different etching processes. For example,
the electrodes 178 may be operated by applying a relatively low
bias power level of less than about 40 Watts, or even about 1 Watt,
to provide good cleaning of the etchant residues. FIG. 6
demonstrates the cleaning of etchant residues comprising SiO.sub.x
for increasing bias power level applied to the electrode 178. FIG.
6 shows that while the cleaning rate increases with bias power
level applied to the electrode 178 up to about 40 Watts, after this
point, the cleaning rate decreases with increasing bias power level
due to a build-up of cleaning process residues which accumulate at
the higher bias power levels. Thus, at the relatively low bias
power level of less than about 40 Watts and even about 1 Watt, a
good cleaning rate of the multi-layer etchant residues is provided.
The RF power level applied to an antenna 156 about the chamber 106
may also be selected to provide good cleaning rates without
excessive corrosion of the chamber surfaces 115. A suitable RF
power level may be from about 200 to about 1500 Watts and may even
be about 600 Watts.
[0036] The cleaning process may also be monitored to determine an
endpoint of the cleaning process. The cleaning endpoint may be, for
example, the time at which the chamber 106 has been substantially
cleaned of etchant residue, or the time at which the chamber 106
has been sufficiently cleaned that subsequent substrates 104 may be
processed in the chamber 106 without contamination. By determining
the endpoint of the cleaning process, the chamber may be cleaned
without undercleaning or overcleaning the chamber 106. For example,
the cleaning process may be monitored by detecting an intensity of
a wavelength of a radiation emission from the energized cleaning
gas in the chamber 106. The intensity of the selected wavelength is
related to the presence of detectable etchant residues in the
chamber 106. For example, the intensity of the selected wavelength
may be related to the presence of two or more types of etchant
residues in the chamber 106, such as the presence of silicon or
carbon containing etchant residue, such as for example SiO.sub.x
and CF.sub.x, in the chamber 106. Etchant residues containing
SiO.sub.x are detectable by observing the intensity of a 4405 .ANG.
wavelength of the radiation emissions from the chamber, whereas
etchant residues containing CF.sub.x are detectable by observing
the intensities of wavelengths in the range of 4000 to 6000 .ANG.;
thus, a suitable detection wavelength may be at 4405 .ANG.. The
cleaning process may be monitored by detecting the intensity of
this wavelength to determine when both the SiO.sub.x and CF.sub.x
containing residues have been cleaned.
[0037] The intensity of the selected wavelength of the radiation
emission from the energized gas may be monitored to determine the
endpoint of cleaning of different types of distributions of the
etchant residues across different regions of the chamber 106. FIG.
7 graphs the relative intensity of the cleaning gas radiation
emission at 4405 .ANG. for increasing cleaning process time. This
graph was used to determine the endpoint for the cleaning process.
The relative intensity of the radiation wavelength generally
decreases with time, with the exception of a small increase in the
relative intensity at a time of about 85 seconds. Towards the end
of the cleaning process, the relative intensity levels off to a
substantially constant value, indicating that the etchant residues
have been substantially cleaned from the chamber 106. For this
graph the cleaning endpoint is determined to be at about 140
seconds.
[0038] To determine the accuracy of the graphically determined
cleaning endpoint time, the endpoint time was also measured by
monitoring the weight loss registered by a quartz crystal
microbalance positioned in the chamber 106. FIG. 8 graphs the
weight of etchant residues as they removed from the quartz crystal
microbalance during the cleaning process. The cleaning rates were
measured at two regions, namely in the process zone 108 and in an
exhaust region 145 about the gas exhaust 144. The graph
demonstrates that the cleaning rate for etchant residues deposited
in the process zone 108 decreases to a constant value faster than
the cleaning rate for etchant residues deposited in the exhaust
region 145 showing that the process zone 108 is cleaned more
quickly than the exhaust region 145. The cleaning rate at the
exhaust region 145 starts off lower, increases at about 70 seconds,
and then decreases to a constant value at about 140 seconds. Thus,
the point at which both regions in the chamber 106 have been
cleaned is at about 140 seconds. This was the same time as
determined by monitoring the cleaning gas radiation emission at
4405 .ANG.. Thus, the cleaning process endpoint for the cleaning of
different types of residues having different distributions in the
chamber 106 may be determined by monitoring the radiation emission
from the energized cleaning gas in the chamber 106.
[0039] Because different types of etching processes are performed
in the chamber 106 in the foundry etching processes, it is not
always known whether etchant residues have actually been formed on
the chamber surfaces. Running a cleaning process in a chamber which
does not have an etchant residues would result in erosion of the
chamber walls (which are typically aluminum) by the cleaning gas to
form erosion byproducts, such as AlF.sub.x. To ensure that the
chamber surfaces are at least partially coated with etchant
residues to prevent such erosion, the chamber 106 may be treated by
depositing a sacrificial coating on the internal surfaces in the
chamber 106, before any production substrate etching or cleaning
process is performed. The sacrificial coating reduces erosion of
surfaces 115 in the chamber 106 in the event that etchant residues
have not formed on the chamber surfaces, by providing a sacrificial
coating that may be removed by the cleaning gas. In this process, a
sacrificial substrate 104 is processed in the chamber 106, for
example by etching the substrate, to deposit a sacrificial coating
on the internal surfaces 115 in the chamber 106. The sacrificial
coating ensures that some material is present on the chamber
surfaces when the cleaning gas is used to clean the chamber 106.
The treatment substrate 104 may comprise materials such as silicon
containing materials, for example, a bare silicon wafer. The
silicon wafer may be processed by an etchant gas comprising 70 sccm
Cl.sub.2, 110 sccm HBr, and 5 to 10 sccm O.sub.2 to etch the
silicon and deposit sacrificial SiO.sub.x residues on the chamber
surfaces. The etchant gases may be maintained at a pressure of from
about 3 to about 10 mTorr in the chamber 106 while the etchant gas
is energized by applying an RF power level of 1000 to 1500 Watts to
the antenna 156 and 80 to 150 Watts to the electrode 178.
[0040] The multiple etching and cleaning processes may be performed
in the chamber 106 illustrated in FIG. 1 by operating the chamber
components with a controller 300 as shown in FIG. 9. The controller
300 may comprise a computer 302 having a central processor unit
(CPU) 306, such as for example a 68040 microprocessor, commercially
available from Synergy Microsystems, Calif., or a Pentium Processor
commercially available from Intel Corporation, Santa Clara,
California, that is coupled to a hardware interface 304, memory 308
and peripheral computer components, as shown in FIG. 9. Preferably,
the memory 308 may include a removable storage media 310, such as
for example a CD or floppy drive, a non-removable storage media
312, such as for example a hard drive, and random access memory
314. The controller 300 may further comprise a plurality of
interface cards including, for example, analog and digital input
and output boards, interface boards, and motor controller boards.
The interface between an operator and the controller 300 can be,
for example, via a display 316 and a light pen 318. The light pen
318 detects light emitted by the monitor display 316 with a light
sensor in the tip of the light pen 318. To select a particular
screen or function, the operator touches a designated area of a
screen on the monitor 316 and pushes the button on the light pen
318. Typically, the area touched changes color, or a new menu is
displayed, confirming communication between the user and the
controller 300.
[0041] The data signals received by and/or evaluated by the
controller 300 may be sent to a factory automation host computer
338. The factory automation host computer 338 may comprise a host
software program 340 that evaluates data from several systems,
platforms or chambers 106, and for batches of substrates 104 or
over an extended period of time, to identify statistical process
control parameters of (i) the processes conducted on the substrates
104, (ii) a property that may vary in a statistical relationship
across a single substrate 104, or (iii) a property that may vary in
a statistical relationship across a batch of substrates 104. The
host software program 340 may also use the data for ongoing in-situ
process evaluations or for the control of other process parameters.
A suitable host software program comprises a WORKSTREAM.TM.
software program available from aforementioned Applied Materials.
The factory automation host computer 338 may be further adapted to
provide instruction signals to (i) remove particular substrates 104
from the processing sequence, for example, if a substrate property
is inadequate or does not fall within a statistically determined
range of values, or if a process parameter deviates from an
acceptable range; (ii) end processing in a particular chamber 106,
or (iii) adjust process conditions upon a determination of an
unsuitable property of the substrate 104 or process parameter. The
factory automation host computer 338 may also provide the
instruction signal at the beginning or end of processing of the
substrate 104 in response to evaluation of the data by the host
software program 340.
[0042] In one version the controller 300 comprises a
computer-readable program 320 may be stored in the memory 308, for
example on the non-removable storage media 312 or on the removable
storage media 310. The computer readable program 320 generally
comprises process control software comprising program code to
operate the chamber 106 and its components, process monitoring
software to monitor the processes being performed in the chamber
106, safety systems software, and other control software, as for
example, illustrated in FIG. 9. The computer-readable program 320
may be written in any conventional computer-readable programming
language, such as for example, assembly language, C++, Pascal, or
Fortran. Suitable program code is entered into a single file, or
multiple files, using a conventional text editor and stored or
embodied in computer-usable medium of the memory 308. If the
entered code text is in a high level language, the code is
compiled, and the resultant compiler code is then linked with an
object code of precompiled library routines. To execute the linked,
compiled object code, the user invokes the object code, causing the
CPU 306 to read and execute the code to perform the tasks
identified in the program.
[0043] An illustrative block diagram of a hierarchical control
structure of a specific embodiment of a computer readable program
320 according to the present invention is also shown in FIG. 9.
Using a light pen interface, a user enters a process set and
chamber number into the computer readable program 320 in response
to menus or screens displayed on the CRT terminal. The computer
readable program includes process selector program code 321 to
control the substrate position, gas flow, gas pressure,
temperature, RF power levels, and other parameters of a particular
process, as well as code to monitor the chamber process. The
process sets are predetermined groups of process parameters
necessary to carry out specified processes. The process parameters
are process conditions, including without limitations, gas
composition, gas flow rates, temperature, pressure, gas energizer
settings such as RF or microwave power levels, magnetic field
generation, heat transfer gas pressure, and wall temperature.
[0044] The process sequencer instruction set 322 comprises program
code to accept a chamber type and set of process parameters from
the process selector 321 and to control its operation. The
sequencer program 322 initiates execution of the process set by
passing the particular process parameters to a chamber manager
instruction set 324 that controls multiple processing tasks in the
process chamber 106. Typically, the process chamber instruction set
324 includes a substrate positioning instruction set 326, a gas
flow control instruction set 328, a gas pressure control
instruction set 330, a temperature control instruction set 332, a
gas energizer control instruction set 334, and a process monitoring
instruction set 336. Typically, the substrate positioning
instruction set 326 comprises program code for controlling chamber
components that are used to load the substrate 104 onto the support
110 and optionally, to lift the substrate 104 to a desired height
in the chamber 106. The gas flow control instruction set 328
comprises program code for controlling the flow rates of different
constituents of the process gas. The gas flow control instruction
set 328 regulates the opening size of the gas flow control valves
134 to obtain the desired gas flow rate into the chamber 106. The
gas pressure control instruction set 330 comprises program code for
controlling the pressure in the chamber 106 by regulating
open/close position of the throttle valve 150. The temperature
control instruction set 332 comprises program code to control
temperatures in the chamber 106, such as for example the
temperature of a wall 107 in the chamber 106 or the temperature of
the substrate 104. The gas energizer control instruction set 334
comprises program code for setting, for example, the RF power level
applied to the antenna 156 by the antenna power supply 155.
[0045] The process monitoring instruction set 336 may comprise code
for monitoring a process in the chamber 106 and determining a
process endpoint. For example, the process monitoring instruction
set 336 may comprise program code to monitor a cleaning process in
the chamber 106 and determining a cleaning endpoint. In one
version, the process monitoring instruction set 334 may monitor a
cleaning process by receiving a signal from the detector 200 which
is related to the intensity of a wavelength of the radiation
emitted by the energized cleaning gas in the chamber 106. The
signal may be processed to determine the intensity of the signal as
a function of time. When the signal intensity reaches a
pre-determined value, such as for example a constant value, for a
pre-determined length of time, the process monitoring instruction
set 334 may give a signal to halt the cleaning process.
[0046] In one version, the chamber manager instruction set 324 may
set process conditions in the chamber 106 to etch a plurality of
batches of substrates 104. For example, the substrate positioning
instruction set 326 may position a first substrate 104 to be etched
in the chamber 106 and the gas flow instruction set 328 may
regulate the flow of etchant gases into the chamber 106 while the
gas energizer sets the RF power levels for energizing the etchant.
gas. The etching process may also be performed on multiple
substrates 104 having different materials with etching process
conditions selected by the chamber manager instruction set to
etching the different substrates. In one version, the chamber
manager instruction set 324 comprises program code to set etching
process conditions to etch one or more first substrates 104
comprising a first material, such as for example polysilicon, and
thereafter, the chamber manager instruction set 324 comprises
program code to etch one or more second substrates 104 comprising a
second material, such as for example, silicon oxide.
[0047] The chamber manager instruction set 324 may also set process
conditions in the chamber to clean the chamber 106 after etching
the different substrates 104. For example, the gas flow instruction
set 328 may regulate the flow of cleaning gases into the chamber
106, for example by setting a volumetric flow ratio of gases in the
cleaning gas, while the gas energizer control instruction set 334
sets the RF power levels for energizing the cleaning gas. The
process conditions may be set to clean a number of different types
of etchant residue, such as for example silicon containing etchant
residues and carbon containing etchant residue, in different
distributions in the chamber 106. For example, the gas flow
instruction set 328 may include program code to set a volumetric
flow ratio of an oxygen containing gas to a fluorocarbon gas of
from about 1:1 to about 1:40 to provide good cleaning rates of
different types of etchant residues in the chamber 106.
[0048] The data signals received by and/or evaluated by the
controller 300 may also be sent to a factory automation host
computer 338. The factory automation host computer 338 may comprise
a host software program 340 that evaluates data from several
systems, platforms or chambers 106, and for batches of substrates
104 or over an extended period of time, to identify statistical
process control parameters of (i) the processes conducted on the
substrates 104, (ii) a property that may vary in a statistical
relationship across a single substrate 104, or (iii) a property
that may vary in a statistical relationship across a batch of
substrates 104. The host software program 340 may also use the data
for ongoing in-situ process evaluations or for the control of other
process parameters. A suitable host software program comprises a
WORKSTREAM.TM. software program available from aforementioned
Applied Materials. The factory automation host computer 338 may be
further adapted to provide instruction signals to (i) remove
particular substrates 104 from the processing sequence, for
example, if a substrate property is inadequate or does not fall
within a statistically determined range of values, or if a process
parameter deviates from an acceptable range; (ii) end processing in
a particular chamber 106, or (iii) adjust process conditions upon a
determination of an unsuitable property of the substrate 104 or
process parameter. The factory automation host computer 338 may
also provide the instruction signal at the beginning or end of
processing of the substrate 104 in response to evaluation of the
data by the host software program 340.
EXAMPLES
[0049] The following examples demonstrate chamber cleaning and
substrate etching processes according to the present invention. In
these examples, batches of substrates were etched in a DPS chamber
106 commercially available from Applied Materials having a process
volume of about 35 liters, and which is generally described
above.
Example 1
[0050] In this example, a first etching process was performed in
the chamber 106 on a batch of twenty five substrates 104 comprising
a polysilicon layer formed over a silicon oxide layer. The multiple
stage etching process was performed to etch the polysilicon layer.
The first etching process comprised a main etch stage in which a
first etchant gas comprising 70 sccm Cl.sub.2, 110 sccm HBr, and 5
to 10 sccm O.sub.2, was introduced into the chamber 106; the gas
pressure was maintained at 3 to 10 mTorr; and the gas energized by
applying an RF power level of 600 to 1000 Watts to the antenna 156
and 40 to 120 Watts to the electrode 178. Thereafter, an overetch
stage was performed using an etchant gas comprising 100 sccm HBr
and 2 to 5 sccm O.sub.2; the pressure of the gases in the chamber
106 was maintained at within 30 to 80 mTorr; and the gas was
energized by applying an RF power level of 1000 to 1500 Watts to
the antenna 156, and 80 to 150 Watts to the electrode 178.
[0051] Following the first etching process, a second etching
process was performed in the chamber 106 on a batch of twenty five
substrates 104 comprising a polysilicon layer formed over a silicon
oxide layer. The multiple stage etching process was performed to
etch the polysilicon layer. The second etching process comprised a
main etch stage in which a second etchant gas comprising 25 sccm
CF.sub.4, 110 sccm HBr, 40 sccm Cl.sub.2, and 2 sccm O.sub.2, was
introduced into the chamber 106; the gas pressure was maintained at
4 mTorr; and the gas energized by applying an RF power level of 750
Watts to the antenna 156 and 70 Watts to the electrode 178.
Thereafter, an overetch stage was performed using an etchant gas
comprising 100 sccm HBr and 2 to 5 sccm O.sub.2; the pressure of
the gases in the chamber 106 was maintained at within 30 to 80
mTorr; and the gas was energized by applying an RF power level of
1000 to 1500 Watts to the antenna 156, and 80 to 150 Watts to the
electrode 178.
[0052] Upon completion of the first and second etching process, a
cleaning process was performed to clean the chamber 106 of the
different types of residues generated in the processes. In the
cleaning process, a cleaning gas comprising O.sub.2 and CF.sub.4
was introduced into the chamber 106. The O.sub.2 gas was introduced
at a volumetric flow rate equivalent to 20 sccm and the CF.sub.4
gas was introduced at a volumetric flow rate equivalent to 100 sccm
for a chamber 106 having a process volume of 35 liters, or in other
words, in a volumetric flow ratio of O.sub.2 to CF.sub.4 of 1:5.
The gas pressure in the chamber 106 was maintained at 10 mTorr. The
cleaning gas was energized by applying an RF power level of 600
Watts to the antenna 156 and a bias power level of 1 Watt to the
electrode 178. The intensity of the radiation emission of the
energized cleaning gas was monitored at 4405 .ANG. to determine the
cleaning process endpoint. The cleaning process provided
substantially uniform cleaning of the multiple types of etchant
residues, such as carbon and silicon containing etchant residue,
generated by the first and second etching process. Thus, this
example demonstrates that an energized cleaning gas comprising
O.sub.2 and CF.sub.4 in a volumetric flow ratio of 1:5 may be used
to clean the multiple types of etch residue generated in different
etching processes.
Example 2
[0053] In this example, a first etching process was performed in
the chamber 106 on a batch of twenty five substrates 104 comprising
silicon. The process was performed to etch shallow trenches on the
silicon substrates 104. The first etching process comprised
introducing a first etchant gas comprising 100 sccm Cl.sub.2, 5
sccm O.sub.2 and 7 sccm N.sub.2 into the chamber 106; the gas
pressure was maintained at 4 mTorr; and the gas energized by
applying an RF power level of 1200 Watts to the antenna 156 and 120
Watts to the electrode 178.
[0054] Following the first etching process, a second etching
process was performed in the chamber 106 on a batch of twenty five
substrates 104 comprising polysilicon. The multiple stage etching
process was performed to etch the polysilicon material, which
formed a layer over a silicon oxide layer. The second etching
process comprised a main etch stage in which a second etchant gas
comprising 25 sccm CF.sub.4, 110 sccm HBr, 40 sccm Cl.sub.2, and 2
sccm O.sub.2, was introduced into the chamber 106; the gas pressure
was maintained at 4 mTorr; and the gas energized by applying an RF
power level of 750 Watts to the antenna 156, and 70 Watts to the
electrode 178. Thereafter, an overetch stage was performed using an
etchant gas comprising 100 sccm HBr and 2 to 5 sccm O.sub.2; the
pressure of the gases in the chamber 106 was maintained at within
30 to 80 mTorr; and the gas was energized by applying an RF power
level of 1000 to 1500 Watts to the antenna 156, and 80 to 150 Watts
to the electrode 178.
[0055] Upon completion of the first and second etching process, a
cleaning process was performed to clean the chamber 106 of the
different types of residues generated in the processes. In the
cleaning process, a cleaning gas comprising O.sub.2 and CF.sub.4
was introduced into the chamber 106. The O.sub.2 gas was introduced
at a volumetric flow rate equivalent to 20 sccm and the CF.sub.4
gas was introduced at a volumetric flow rate equivalent to 100 sccm
for a chamber 106 having a process volume of 35 liters, or in other
words, in a volumetric flow ratio of O.sub.2 to CF.sub.4 of 1:5.
The gas pressure in the chamber 106 was maintained at 10 mTorr. The
cleaning gas was energized by applying an RF power level of 600
Watts to the antenna 156 and a bias power level of 1 Watt to the
electrode 178. The intensity of the radiation emission of the
energized cleaning gas was monitored at 4405 .ANG. to determine the
cleaning process endpoint. The cleaning process provided
substantially uniform cleaning of the multiple types of etchant
residues, such as carbon and silicon containing etchant residue,
generated by the first and second etching process. Thus, this
example demonstrates that an energized cleaning gas comprising
O.sub.2 and CF.sub.4 in a volumetric flow ratio of 1:5 may be used
to clean the multiple types of etch residue generated in different
etching processes.
Example 3
[0056] In this example, a first etching process was performed in
the chamber 106 on a batch of twenty five substrates 104 comprising
a first material comprising tungsten silicide. The multiple stage
etch process was performed to etch the tungsten silicide material.
The first etching process comprised a main etching stage in which a
first etchant gas comprising 100 sccm Cl.sub.2, 5 sccm O.sub.2 and
7 sccm N.sub.2 was introduced into the chamber 106; the gas
pressure was maintained at 4 mTorr; and the gas energized by
applying an RF power level of 1200 Watts to the antenna 156 and 120
Watts to the electrode 178. Thereafter, an overetch stage was
performed using an etchant gas comprising 100 sccm HBr and 2 to 5
sccm O.sub.2; the pressure of the gases in the chamber 106 was
maintained at within 30 to 80 mTorr; and the gas was energized by
applying an RF power level of 1000 to 1500 Watts to the antenna 156
and 80 to 150 Watts to the electrode 178.
[0057] Following the first etching process, a second etching
process was performed in the chamber 106 on a batch of twenty five
substrates 104 comprising a second material comprising silicon. The
second etching process was performed to etch shallow trenches in
the silicon material. The second etching process comprised
introducing a second etchant gas comprising 100 sccm Cl.sub.2, 5
sccm O.sub.2 and 7 sccm N.sub.2 into the chamber 106; the gas
pressure was maintained at 4 mTorr; and the gas energized by
applying an RF power level of 1200 Watts to the antenna 156 and 120
Watts to the electrode 178.
[0058] Upon completion of the first and second etching process, a
cleaning process was performed to clean the chamber 106 of the
different types of residues generated in the processes. In the
cleaning process, a cleaning gas comprising O.sub.2 and CF.sub.4
was introduced into the chamber 106. The O.sub.2 gas was introduced
at a volumetric flow rate equivalent to 20 sccm and the CF.sub.4
gas was introduced at a volumetric flow rate equivalent to 100 sccm
for a chamber 106 having a process volume of 35 liters, or in other
words, in a volumetric flow ratio of O.sub.2 to CF.sub.4 of 1:5.
The gas pressure in the chamber 106 was maintained at 10 mTorr. The
cleaning gas was energized by applying an RF power level of 600
Watts to the antenna 156 and a bias power level of 1 Watt to the
electrode 178. The intensity of the radiation emission of the
energized cleaning gas was monitored at 4405 .ANG. to determine the
cleaning process endpoint. The cleaning process provided
substantially uniform cleaning of the multiple types of etchant
residues generated by the first and second etching process. Thus,
this example demonstrates that an energized cleaning gas comprising
O.sub.2 and CF.sub.4 in a volumetric flow ratio of 1:5 may be used
to clean the multiple types of etch residue generated in different
etching processes.
Example 4
[0059] In this example, a first etching process was performed in
the chamber 106 on a batch of twenty five substrates 104 comprising
a first material comprising tungsten silicide. The multiple stage
etch process was performed to etch the tungsten silicide material.
The first etching process comprised a main etching stage in which a
first etchant gas comprising 100 sccm Cl.sub.2, 5 sccm O.sub.2 and
7 sccm N.sub.2 was introduced into the chamber 106; the gas
pressure was maintained at 4 mTorr; and the gas energized by
applying an RF power level of 1200 Watts to the antenna 156 and 120
Watts to the electrode 178. Thereafter, an overetch stage was
performed using an etchant gas comprising 100 sccm HBr and 2 to 5
sccm O.sub.2; the pressure of the gases in the chamber 106 was
maintained at within 30 to 80 mTorr; and the gas was energized by
applying an RF power level of 1000 to 1500 Watts to the antenna 156
and 80 to 150 Watts to the electrode 178.
[0060] Following the first etching process, a second etching
process was performed in the chamber 106 on a batch of twenty five
substrates 104 comprising second material comprising polysilicon.
The multiple stage etching process was performed to etch the
polysilicon material, which formed a layer over a layer of silicon
oxide. The second etching process comprised a main etch stage in
which a second etchant gas comprising 25 sccm CF.sub.4, 110 sccm
HBr, 40 sccm Cl.sub.2, and 2 sccm O.sub.2 was introduced into the
chamber 106; the gas pressure was maintained at 4 mTorr; and the
gas energized by applying an RF power level of 750 Watts to the
antenna 156 and 70 Watts to the electrode 178. Thereafter, an
overetch stage was performed using an etchant gas comprising 100
sccm HBr and 2 to 5 sccm O.sub.2; the pressure of the gases in the
chamber 106 was maintained at within 30 to 80 mTorr; and the gas
was energized by applying an RF power level of 1000 to 1500 Watts
to the antenna 156 and 80 to 150 Watts to the electrode 178.
[0061] Upon completion of the first and second etching process, a
cleaning process was performed to clean the chamber 106 of the
different types of residues generated in the processes. In the
cleaning process, a cleaning gas comprising O.sub.2 and CF.sub.4
was introduced into the chamber 106. The O.sub.2 gas was introduced
at a volumetric flow rate equivalent to 20 sccm and the CF.sub.4
gas was introduced at a volumetric flow rate equivalent to 100 sccm
for a chamber 106 having a process volume of 35 liters, or in other
words, in a volumetric flow ratio of O.sub.2 to CF.sub.4 of 1:5.
The gas pressure in the chamber 106 was maintained at 10 mTorr. The
cleaning gas was energized by applying an RF power level of 600
Watts to the antenna 156 and a bias power level of 1 Watt to the
electrode 178. The intensity of the radiation emission of the
energized cleaning gas was monitored at 4405 .ANG. to determine the
cleaning process endpoint. The cleaning process provided
substantially uniform cleaning of the multiple types of etchant
residues, such as carbon and silicon containing residues generated
by the first and second etching process. Thus, this example
demonstrates that an energized cleaning gas comprising O.sub.2 and
CF.sub.4 in a volumetric flow ratio of 1:5 may be used to clean the
multiple types of etch residue generated in different etching
processes.
[0062] Although exemplary embodiments of the present invention are
shown and described, those of ordinary skill in the art may devise
other embodiments which incorporate the present invention, and
which are also within the scope of the present invention. For
example, other substrate etching processes may be performed without
deviating from the scope of the present invention. Also, cleaning
gas compositions other than those specifically mentioned may be
used, as would be apparent to those of ordinary skill in the art.
Furthermore, the terms below, above, bottom, top, up, down, first
and second and other relative or positional terms are shown with
respect to the exemplary embodiments in the figures and are
interchangeable. Therefore, the appended claims should not be
limited to the descriptions of the preferred versions, materials,
or spatial arrangements described herein to illustrate the
invention.
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