U.S. patent application number 09/788120 was filed with the patent office on 2002-08-22 for method and system for generation and distribution of supply voltages in memory systems.
This patent application is currently assigned to SanDisk Corporation. Invention is credited to Cernea, Raul Adrian, Conley, Kevin M., Gongwer, Geoffrey Steven, Wang, Chi-Ming, Wang, Yong Liang.
Application Number | 20020114184 09/788120 |
Document ID | / |
Family ID | 25143497 |
Filed Date | 2002-08-22 |
United States Patent
Application |
20020114184 |
Kind Code |
A1 |
Gongwer, Geoffrey Steven ;
et al. |
August 22, 2002 |
METHOD AND SYSTEM FOR GENERATION AND DISTRIBUTION OF SUPPLY
VOLTAGES IN MEMORY SYSTEMS
Abstract
Techniques for producing and supplying various voltage levels
within a memory system having multiple memory blocks (e.g., memory
chips) are described. The various voltage levels can be produced by
voltage generation circuitry (e.g., charge pump and/or regulator
circuitry) within the memory system. The various voltage levels can
be supplied to the multiple memory blocks through a power bus.
According to one aspect, charge pump and/or regulator circuits are
provided within at most one of the memory blocks of a memory system
(unless back-ups are provided for fault tolerance), and a power bus
is used to distribute the generated voltage levels to other of the
memory blocks. According to another aspect, a memory controller
generates multiple supply voltage levels that are distributed
(e.g., via a power bus) to each of the memory blocks.
Inventors: |
Gongwer, Geoffrey Steven;
(Los Altos, CA) ; Conley, Kevin M.; (San Jose,
CA) ; Wang, Chi-Ming; (Fremont, CA) ; Wang,
Yong Liang; (Saratoga, CA) ; Cernea, Raul Adrian;
(Santa Clara, CA) |
Correspondence
Address: |
BEYER WEAVER & THOMAS LLP
P.O. BOX 778
BERKELEY
CA
94704-0778
US
|
Assignee: |
SanDisk Corporation
|
Family ID: |
25143497 |
Appl. No.: |
09/788120 |
Filed: |
February 16, 2001 |
Current U.S.
Class: |
365/185.11 |
Current CPC
Class: |
G11C 5/14 20130101 |
Class at
Publication: |
365/185.11 |
International
Class: |
G11C 016/04 |
Claims
What is claimed is:
1. A memory system that receives an external supply voltage from a
host, said memory system comprising: a plurality of memory blocks,
each of said memory blocks including at least a plurality of data
storage elements; and a memory controller operatively coupled to
said memory blocks and operatively coupled to receive the external
supply voltage when said memory system is operatively connected to
the host, said memory controller including at least a voltage
generation circuit operable to produce at least a first and second
supply voltages for use by each of said memory blocks.
2. A memory system as recited in claim 1, wherein said memory
system further comprises: a power bus coupled to each of said
memory blocks, said power bus supplying at least the first and
supply voltages between said memory blocks.
3. A memory system as recited in claim 1, wherein said memory
blocks do not include voltage generation circuitry to internally
generate any supply voltages.
4. A memory system as recited in claim 1, wherein said data storage
elements provide non-volatile data storage.
5. A memory system as recited in claim 4, wherein said data storage
elements provide semiconductor-based data storage.
6. A memory system as recited in claim 5, wherein said data storage
elements are EEPROM or FLASH.
7. A memory system as recited in claim 4, wherein each of said data
storage elements comprise at least one floating-gate storage
device.
8. A memory system as recited in claim 1, wherein said memory
system is a memory card.
9. A memory system as recited in claim 1, wherein said memory
system is provided within a single package.
10. A memory system as recited in claim 9, wherein the single
package is a memory card.
11. A memory system as recited in claim 1, wherein said memory
system is a removable data storage product.
12. A memory system as recited in claim 1, wherein the host is a
computing device.
13. A memory system as recited in claim 1, wherein said memory
system removably couples to the host.
14. A memory system as recited in claim 1, wherein said power bus
supplies at least the first supply voltage to each of said memory
blocks.
15. A memory system as recited in claim 1, wherein said voltage
generation circuit produces the first supply voltage and a second
supply voltage, and wherein said power bus supplies the first
supply voltage and the second supply voltage between said memory
blocks.
16. A memory system as recited in claim 1, wherein the voltage
generation circuit is a voltage regulator.
17. A memory system that receives an external supply voltage from a
host, said memory system comprising: a plurality of memory blocks,
each of said memory blocks including at least a plurality of data
storage elements, at least one of said memory blocks further
including at least a first voltage generation circuit operable to
produce at least one memory-generated supply voltage; a memory
controller operatively coupled to said memory blocks and
operatively coupled to receive the external supply voltage when
said memory system is operatively connected to the host, said
memory controller including at least a second voltage generation
circuit operable to produce at least one controller-generated
supply voltage; and a power bus coupled to each of said memory
blocks, said power bus supplying the at least one memory-generated
supply voltage between said memory blocks.
18. A memory system as recited in claim 17, wherein said power bus
further supplies the at least one controller-generated supply
voltage between said memory blocks.
19. A memory system as recited in claim 17, wherein said memory
system further comprises: an Input/Output (I/O) bus operatively
coupling between said memory controller and each of said memory
blocks.
20. A memory system as recited in claim 17, wherein, when said
memory system is operatively connected to the host, the external
supply voltage is supplied to the at least one of said memory
blocks that includes at least said first voltage generation
circuit.
21. A memory system as recited in claim 20, wherein said first
voltage generation circuit receives the external supply voltage
when said memory system is operatively connected to the host, and
the external supply voltage is used by said first voltage
generation circuit to generate the at least one memory-generated
supply voltage.
22. A memory system as recited in claim 17, wherein said memory
system further comprises a link that couples said memory controller
to the at least one of said memory blocks, the link carrying the at
least one controller-generated supply voltage from said memory
controller to the at least one of said memory blocks.
23. A memory system as recited in claim 17, wherein said first
voltage generation circuit is a voltage regulation circuit, and
wherein said second voltage generation circuit is a charge pump and
regulation circuit.
24. A memory system as recited in claim 17, wherein said memory
blocks other than the at least one of said memory blocks do not
include voltage generation circuitry to internally generate any
supply voltages.
25. A memory system as recited in claim 17, wherein said data
storage elements provide non-volatile data storage.
26. A memory system as recited in claim 17, wherein said memory
system is a memory card.
27. A memory system as recited in claim 26, wherein said memory
system is provided within a single package.
28. A memory system as recited in claim 17, wherein said memory
system is a removable data storage product.
29. A memory system as recited in claim 17, wherein the host is a
computing device, and wherein said memory system removably couples
to the host.
30. A memory system as recited in claim 17, wherein said voltage
generation circuit produces a plurality of memory-generated supply
voltages, one of the memory-generated supply voltages being the at
least one memory-generated supply voltage, and wherein said power
bus supplies the plurality of memory-generated supply voltages
between said memory blocks.
31. A memory system as recited in claim 17, wherein at least
another of said memory blocks further includes at least a voltage
generation circuit operable to produce the at least one
memory-generated supply voltage.
32. A memory system that receives an external supply voltage from a
host, said memory system comprising: a plurality of memory blocks,
each of said memory blocks including at least a plurality of data
storage elements, at least one of said memory blocks further
including at least a first voltage generation circuit operable to
produce at least one memory-generated supply voltage; a memory
controller operatively coupled to access said memory blocks; and a
power bus coupled to each of said memory blocks, said power bus
supplying the at least one memory-generated supply voltage between
said memory blocks.
33. A memory system as recited in claim 32, wherein, when said
memory system is operatively connected to the host, the external
supply voltage is supplied to the at least one of said memory
blocks that includes at least said first voltage generation
circuit.
34. A memory system as recited in claim 33, wherein said memory
system further comprises: an Input/Output (I/O) bus operatively
coupling between said memory controller and each of said memory
blocks.
35. A memory system as recited in claim 32, wherein at least
another of said memory blocks further includes at least a voltage
generation circuit operable to produce the at least one
memory-generated supply voltage.
36. A memory system as recited in claim 32, wherein said memory
system is a memory card.
37. A memory system as recited in claim 32, wherein said voltage
generation circuit produces a plurality of memory-generated supply
voltages, one of the memory-generated supply voltages being the at
least one memory-generated supply voltage, and wherein said power
bus supplies the plurality of memory-generated supply voltages
between said memory blocks.
38. A memory system as recited in claim 37, wherein at least one of
the plurality of memory-generated supply voltages is supplied to
said memory controller.
39. A memory system as recited in claim 38, wherein said memory
controller does not include any voltage generation circuitry for
producing any supply voltages for use by any of said memory
blocks.
40. A memory system as recited in claim 32, wherein said memory
system further comprises: a voltage regulator separate from said
memory controller and said memory blocks, said voltage regulator
producing a regulator-generated supply voltage that is supplied to
said power bus, and wherein the regulator-generated supply voltage
is supplied between said memory blocks via said power bus.
41. A data storage device that removably couples to a host unit,
said data storage device comprising: a memory controller; a
plurality of memory blocks operatively connected to said memory
controller, each of said memory blocks including at least data
storage elements; and a power bus operatively supplying different
level supply voltages between each of said memory blocks, the
different level supply voltages being centrally generated by said
memory controller or one of said memory blocks.
42. An electronic system, comprising: a data acquisition device;
and a data storage device removably coupled to said data
acquisition unit, said data storage device storing data acquired by
said data acquisition device, and said data storage device
including at least a memory controller; a plurality of memory
blocks operatively connected to said memory controller, each of
said memory blocks including at least data storage elements; and a
power bus operatively supplying different level supply voltages
between each of said memory blocks, the different level supply
voltages being centrally generated by one or both of said memory
controller and one of said memory blocks.
43. An electronic system as recited in claim 42, wherein said data
acquisition device is one of a camera, a network card or appliance,
a hand-held or notebook computer, a set-top box, a hand-held or
other small audio player/recorder, and a medical monitor.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is related to U.S. patent application Ser.
No. ______, entitled "METHOD AND SYSTEM FOR DISTRIBUTED POWER
GENERATION IN MULTI-CHIP MEMORY SYSTEMS", and filed on same day
herewith, and which is hereby incorporated by reference herein.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to voltage generation and, more
particularly, to voltage generation internal to memory systems.
[0004] 2. Description of the Related Art
[0005] Memory cards are commonly used to store digital data for use
with various products (e.g., electronics products). Examples of
memory cards are flash cards that use Flash type or EEPROM type
memory cells to store the data. Flash cards have a relatively small
form factor and have been used to store digital data for products
such as cameras, hand-held computers, set-top boxes, hand-held or
other small audio players/recorders (e.g., MP3 devices), and
medical monitors. A major supplier of flash cards is SanDisk
Corporation of Sunnyvale, Calif.
[0006] FIG. 1 is a block diagram of a conventional memory system
100. The conventional memory system 100 provides non-volatile data
storage and represents, for example, a memory card (e.g., flash
card). The conventional memory system 100 couples to a host 102.
The host 102 can, for example, be a personal computer or an
electronic appliance. The memory system 100 includes a memory
controller 104 and memory chips 106 and 108. The memory controller
104 includes a voltage regulator 110. A host Input/Output (I/O) bus
couples the memory controller 104 to the host 102. The host 102
also supplies a supply voltage V.sub.DD to the memory controller
104. The voltage regulator 110 within the memory controller 104
receives the supply voltage V.sub.DD and regulates the supply
voltage to produce a regulated supply voltage V.sub.DDR. The
regulated supply voltage V.sub.DDR is supplied to each of the
memory chips 106 and 108. The regulated supply voltage V.sub.DDR is
a fixed voltage level (typically within a tolerance) that is
supplied to the memory chips 106 and 108. In this embodiment, the
memory chips 106 and 108 require the supply voltage that is
supplied to the memory chips 106 and 108 be at a particular voltage
level. Since the memory system 100 couples to various different
hosts, the supply voltage V.sub.DD can vary over different voltage
ranges, for example, 1.8 volts, 3.3 volts or 5 volts. However, it
is typical that current memory chips require that the voltage be
3.3 volts. The voltage regulator 110 ensures that the regulated
supply voltage V.sub.DDR is set at a particular voltage level
(e.g., 3.3 volts) regardless of the level of the supply voltage
V.sub.DD.
[0007] In any case, the memory chips 106 and 108 require for their
operation various different supply voltage levels than the
particular voltage level (i.e., V.sub.DDR) received from the memory
controller 104. Hence, the memory chips 106 and 108 include charge
pump circuits 112 and 114, respectively. The charge pump circuits
112 and 114 receive the regulated supply voltage V.sub.DDR and
independently and internally generate additional supply voltage
levels for internal use by their associated memory chip. In another
embodiment, the memory chips can operate upon receiving different
supply voltages when the memory controller provides no voltage
regulation. However, in doing so, memory chip design is more
complex and optimal performance is lost because memory chips must
detect the input supply voltage level and then select a set of
operating parameters that correspond to the detected level of the
input supply voltage.
[0008] One problem with the conventional memory system 100 is that
each of the memory chips are required to include charge pump
circuitry. The charge pump circuitry not only consumes precious
semiconductor die area of the memory chips but also causes
substantial noise generation when producing the additional supply
voltages. The noise generation can detrimentally affect the
sensitive analog portions of the memory chips. Accordingly, the
additional noise provided by the charge pump circuitry degrades
operational performance of the memory chips.
[0009] Thus, there is a need for improved approaches to producing
various different supply voltage levels for use by memory chips
that provide non-volatile data storage.
SUMMARY OF THE INVENTION
[0010] Broadly speaking, the invention relates to techniques for
producing and supplying various voltage levels within a memory
system having multiple memory blocks (e.g., memory chips). The
various voltage levels can be produced by voltage generation
circuitry (e.g., charge pump and/or regulator circuitry) within the
memory system. The various voltage levels can be supplied to or
between memory blocks through a power bus.
[0011] The invention can be implemented in numerous ways, such as,
a system, apparatus, device, and method. Several embodiments of the
invention are discussed below.
[0012] As a memory system that receives an external supply voltage
from a host, one embodiment of the invention includes at least: a
plurality of memory blocks, each of the memory blocks including at
least a plurality of data storage elements; and a memory controller
operatively coupled to the memory blocks and operatively coupled to
receive the external supply voltage when the memory system is
operatively connected to the host, the memory controller including
at least a voltage generation circuit operable to produce at least
a first supply voltage for use by each of the memory blocks. The
embodiment of the invention may optionally include a power bus
coupled to each of the memory blocks for supplying at least the
first supply voltage between the memory blocks.
[0013] As a memory system that receives an external supply voltage
from a host, another embodiment of the invention includes at least:
a plurality of memory blocks, each of the memory blocks including
at least a plurality of data storage elements, at least one of the
memory blocks further including at least a first voltage generation
circuit operable to produce at least one memory-generated supply
voltage; a memory controller operatively coupled to the memory
blocks and operatively coupled to receive the external supply
voltage when the memory system is operatively connected to the
host, the memory controller including at least a second voltage
generation circuit operable to produce at least one
controller-generated supply voltage; and a power bus coupled to
each of the memory blocks. The power bus supplies the at least one
memory-generated supply voltage between the memory blocks.
[0014] As a memory system that receives an external supply voltage
from a host, still another embodiment of the invention includes at
least: a plurality of memory blocks, each of the memory blocks
including at least a plurality of data storage elements, at least
one of the memory blocks further including at least a first voltage
generation circuit operable to produce at least one
memory-generated supply voltage; a memory controller operatively
coupled to access the memory blocks; and a power bus coupled to
each of the memory blocks. The power bus supplies the at least one
memory-generated supply voltage between the memory blocks.
[0015] As a data storage device that removably couples to a host
unit, one embodiment of the invention includes at least a memory
controller; a plurality of memory blocks operatively connected to
the memory controller, each of the memory blocks including at least
data storage elements; and a power bus operatively supplying
different level supply voltages between each of the memory blocks,
the different level supply voltages being centrally generated by
the memory controller or one of the memory blocks.
[0016] As an electronic system, one embodiment of the invention
includes at least a data acquisition device, and a data storage
device removably coupled to the data acquisition unit. The data
storage device stores data acquired by the data acquisition device.
The data storage device includes at least: a memory controller; a
plurality of memory blocks operatively connected to the memory
controller, each of the memory blocks including at least data
storage elements; and a power bus operatively supplying different
level supply voltages between each of the memory blocks, the
different level supply voltages being centrally generated by the
memory controller or one of the memory blocks.
[0017] Other aspects and advantages of the invention will become
apparent from the following detailed description taken in
conjunction with the accompanying drawings which illustrate, by way
of example, the principles of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The invention will be readily understood by the following
detailed description in conjunction with the accompanying drawings,
wherein like reference numerals designate like structural elements,
and in which:
[0019] FIG. 1 is a block diagram of a conventional memory
system;
[0020] FIG. 2 is a block diagram of a memory system according to
one embodiment of the invention;
[0021] FIG. 3 is a block diagram of a memory system according to
another embodiment of the invention;
[0022] FIG. 4 is a block diagram of a memory system according to
still another embodiment of the invention; and
[0023] FIG. 5 is a block diagram of a memory system according to
yet another embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0024] The invention relates to techniques for producing and
supplying various voltage levels within a memory system having
multiple memory blocks (e.g., memory chips). The various voltage
levels can be produced by voltage generation circuitry (e.g.,
charge pump and/or regulator circuitry) within the memory system.
The various voltage levels can be supplied to or between multiple
memory blocks through a power bus.
[0025] According to one aspect of the invention, charge pump and/or
regulator circuits are provided within one of the memory blocks of
a memory system (unless back-ups are provided for fault tolerance),
and a power bus is used to distribute the generated voltage levels
to other of the memory blocks. At most, with this aspect, only one
of the memory blocks needs to include charge pump and/or regulator
circuitry. Hence, the invention serves to limit the extent to which
undesirable noise generated by charge pump and/or regulator
circuitry interferes with operation of sensitive analog components
of memory blocks of a memory system.
[0026] According to another aspect of the invention, a memory
controller generates multiple supply voltage levels that are
distributed (e.g., via a power bus) to each of the memory blocks.
Here, with this aspect, the memory blocks need not include any
charge pump or regulator circuitry as the memory controller can
centrally produce all the needed supply voltages and distribute
them to each of the memory blocks.
[0027] Embodiments of this aspect of the invention are discussed
below with reference to FIGS. 2-5. However, those skilled in the
art will readily appreciate that the detailed description given
herein with respect to these figures is for explanatory purposes as
the invention extends beyond these limited embodiments.
[0028] FIG. 2 is a block diagram of a memory system 200 according
to one embodiment of the invention. The memory system 200 is, for
example, associated with a memory card (such as a plug-in card), a
memory stick, or some other data storage product. Examples of a
memory card include PC Card (formerly PCMCIA device), Flash Card,
Flash Disk, Multimedia Card, and ATA Card.
[0029] The memory system 200 cooperates with a host 202. In
particular, the memory system 200 stores data that is utilized by
the host 202. The memory system 200 and the host 202 communicate
over a host Input/Output (I/O) bus. The host 202 provides a host
voltage V.sub.H (supply voltage) to the memory system 200.
[0030] The memory system 200 includes a memory controller 204 and
memory blocks 206 and 208. In this embodiment, the memory system
200 includes two memory blocks. However, it should be noted that
the memory system 200 can include two or more memory blocks.
Typically, additional memory blocks are added to the memory system
200 to increase its data storage capacity.
[0031] The memory controller 204 includes a voltage generation
circuit 210. The voltage generation circuit 210 receives the host
voltage (V.sub.H) supplied by the host 202 and generates a
plurality of supply voltages that are supplied to the memory blocks
206 and 208. In this embodiment (and other embodiments below), the
plurality of supply voltages are represented as supply voltages V1,
V2 and V3. The supply voltages V1, V2 and V3 represent the voltage
levels utilized by the memory blocks 206 and 208 during their
operation. Accordingly, the memory blocks 206 and 208 do not
further include charge pump or regulation circuitry as these memory
blocks 206 and 208 do not internally generate any different supply
voltages than those supply voltages V1, V2 and V3 received from the
memory controller 204. Accordingly, the memory controller 204
generates all the needed supply voltages for the memory blocks 206
and 208 and thus charge pump regulation circuitry is not needed
within the memory blocks 206 and 208. As result, noise generated by
charge pump circuitry does not interfere with the operation (in
particular, operation of sensitive analog components) of the memory
blocks 206 and 208. Furthermore, costly die area of the
semiconductor dies associated with the memory blocks 206 and 208
need not be consumed by charge pump regulator circuitry.
[0032] Moreover, the supply voltages V1, V2 and V3 produced by the
memory controller 204 are supplied to the memory block 206. A power
bus 212 operates to supply the supply voltages V1, V2 and V3
between the memory block 206 and the memory block 208. In other
words, the power bus 212 carries the supply voltages V1, V2 and V3
to the memory block 208. Further, if the memory system 200 included
additional memory blocks, the power bus 212 would also supply the
supply voltages V1, V2 and V3 to the other additional memory
blocks. The power bus 212 can also be considered as supplying the
supply voltages V1, V2 and V3 to the memory block 206.
[0033] Typically, the memory controller 204 has output contacts
(e.g., pins, pads, terminals, etc.) to output the supply voltages
V1, V2 and V3. The memory blocks 206 and 208 have input contacts to
receive the supply voltages V1, V2 and V3. In one implementation,
links (e.g., wires, traces, etc.) are used to couple the output
contacts of the memory controller 204 to the input contacts of the
memory block 206 as well as to links of the power bus 212. In
another embodiment, links of the power bus 212 are used to couple
the output contacts of the memory controller 204 to the input
contacts of both the memory blocks 206 and 208.
[0034] The level of the supply voltages can vary with
implementation. As one example, the host voltage (V.sub.H) might be
3.3 or 1.8 volts, and the level of the supply voltages V1, V2 and
V3 can be 2.5 volts, 6.5 volts, and 3.3 volts. Although the
embodiment of the memory system 200 shown in FIG. 2 produces supply
voltages V1, V2 and V3 at the memory controller 204, it should be
understood that the memory controller 204 can produce any number of
a plurality of different supply voltage levels that would be needed
by one or more of the memory blocks of the memory system 200.
[0035] Each of the memory blocks 206 and 208 include an array of
data storage elements that provide non-volatile digital data
storage. In one embodiment, the data storage elements are
electrically programmable and electrically erasable. For example,
the data storage elements can be based on floating-gate devices.
The memory blocks 206 and 208 are each separate semiconductor dies,
chips or products. The memory blocks can, for example, be EEPROM or
FLASH devices. The memory controller 204 is also often a separate
semiconductor die, chip or product.
[0036] FIG. 3 is a block diagram of a memory system 300 according
to another embodiment of the invention. The memory system 300
couples to a host 302. The interface between the memory system 300
and host 302 includes a host voltage (V.sub.H) and a host I/O
bus.
[0037] The memory system 300 includes a memory controller 304 and
memory blocks 306 and 308. Although the memory system 300 includes
only two memory blocks, it should be understood that additional
memory blocks can also be provided in the memory system 300. The
memory controller 304 and memory blocks 306 and 308 communicate
over an I/O bus. In addition, a voltage regulator 310 within the
memory controller 304 produces a supply voltage V1. The supply
voltage V1 produced by the voltage regulator 310 represents, for
example, a regulated version of the host voltage V.sub.H. The
supply voltage V1 is supplied to the memory block 306.
[0038] The memory block 306 also includes charge pump circuitry
312. The charge pump circuitry 312 receives the supply voltage V1
from the memory controller 304 and generates at least one
additional supply voltage. In this embodiment, it is assumed that
the charge pump circuitry 312 produces a second supply voltage V2
and a third supply voltage V3. Accordingly, it should be noted that
the charge pump circuitry 312 could generate more than two supply
voltages or could generate a single supply voltage. Typically, the
charge pump circuitry 312 includes a charge pump and/or a
regulator.
[0039] The memory system 300 also includes a power bus 314. The
power bus 314 receives the supply voltage V1 from the memory
controller 304 (or the memory block 306) and also receives the
supply voltages V2 and V3 from the memory block 306. The power bus
314 then transports these supply voltages to the other memory
blocks, namely, the memory block 308. In particular, the memory
block 306 and the memory block 308 can each include three contacts
(e.g., terminals, pins or pads) to respectively couple to the
supply voltages V1, V2 and V3. The power bus 314 respectively
interconnects these three terminals of each of the memory blocks
306 and 308. Hence, the supply voltage V1 produced by the memory
controller 304 is able to be coupled not only to the memory block
306 but also to the memory block 308 using the power bus 314.
Likewise, the supply voltages V2 and V3 produced by the charge pump
circuitry 312 are able to be not only internally used within the
memory block 306 but also externally supplied through the power bus
314 to the memory block 308 (and possibly other blocks).
Accordingly, the memory system 300 requires only that one of the
memory blocks include charge pump circuitry to generate the
additional supply voltage levels needed by the various memory
blocks.
[0040] Further, the host voltage V.sub.H can also be supplied to
the memory block 306. The charge pump circuitry 312 can then
produce the second and third supply voltages V2 and V3 using the
first supply voltage V1 and/or the host voltage V.sub.H. The
availability of the host voltage V.sub.H at the memory block 306
can enable the charge pump circuitry 312 to more efficiently
produce the second and third supply voltages V2 and V3. For
example, if the host voltage V.sub.H were 5.0 volts and the first
supply voltage V1 were 3.0 volts, then producing a third supply
voltage of 6.5 volts would be more efficient (i.e., less charge
pumping required) from a 5.0 volts starting point as opposed to a
3.0 volts starting point. The host voltage V.sub.H can be directly
coupled to the memory block 306 over a link 316. The link 316 can
be implemented as a wire, trace or other electronic
interconnection. Alternatively, the host voltage V.sub.H could be
indirectly supplied to the memory block 306 through the memory
controller 310.
[0041] Further, it should be noted that a dotted box illustrated
within the memory block 308 represents an optional charge pump
circuit 318. The optional charge pump circuit 318 can be provided
within the memory block 308 (or other memory blocks within the
memory system) as a secondary or back-up charge pump circuit. In
one implementation, the optional charge pump circuit 318 can be
used to produce one or more additional supply voltages for the
memory block 308 that are not available from the power bus 314. In
another implementation, the charge pump circuit 318 can be
activated to produce the supply voltages V2 and V3 in the event
that the charge pump circuitry 312 is inoperable and, thus, supply
the supply voltages V2 and V3 to the memory block 306 via the power
bus 314. In an embodiment that includes such optional charge pump
circuits, the host voltage V.sub.H can also be coupled to the
memory block 308 via the power bus 314 or a link 320.
[0042] FIG. 4 is a block diagram of a memory system 400 according
to still another embodiment of the invention. The memory system 400
couples to a host 402. The host 402 and the memory system 400
communicate over a host I/O bus. The host 402 also supplies a host
voltage V.sub.H to the memory controller 404. The memory system 400
includes the memory controller 404 and memory blocks 406 and 408.
In this embodiment, like the memory system 300 illustrated in FIG.
3, the memory block 406 includes charge pump circuitry 410.
However, unlike the memory system 300, the memory controller 404
does not include a voltage regulator. In other words, the memory
controller 404 is not producing any supply voltages that are
utilized by the memory blocks 406 and 408. Instead, in this
embodiment, the charge pump circuitry 410 provided in the memory
block 406 is supplying all the supply voltages needed by the memory
blocks 406 and 408. In particular, the charge pump circuitry 410
can produce a plurality of supply voltages, namely, supply voltages
V1, V2 and V3. The charge pump circuitry 410 receives the host
voltage V.sub.H provided by the host 402 over a link 412. The
charge pump circuitry 410 uses the host voltage V.sub.H in
producing the supply voltages V1, V2 and V3. The charge pump
circuitry 410 can supply the supply voltage V1, not only internally
to the memory block 406 but also externally to the memory
controller 404, if desired by the memory controller. Still further,
the supply voltages V1, V2 and V3 (in addition to being used
internal to the memory block 406) are coupled to a power bus 414.
The power bus 414 operates to couple the supply voltages V1, V2 and
V3 between the memory blocks 406 and 408. Hence, the supply
voltages V1, V2 and V3 are supplied to the memory block 408 via the
power bus 414. In other words, the memory block 408 is not
internally generating any of the supply voltage levels but instead
receives the supply voltage levels over the power bus 414.
[0043] Further, it should be noted that a dotted box illustrated
within the memory block 408 represents an optional charge pump
circuit 416. The optional charge pump circuit 416 can be provided
within the memory block 408 (or other memory blocks within the
memory system) as a secondary or back-up charge pump circuit. In
one implementation, the optional charge pump circuit 416 can be
used to produce one or more additional supply voltages for the
memory block 408 that are not available from the power bus 414. In
another implementation, the charge pump circuit 416 can be
activated to produce the supply voltages V1, V2 and V3 in the event
that the charge pump circuitry 410 is inoperable and, thus, supply
the supply voltages V1, V2 and V3 to the memory block 406 via the
power bus 414. In an embodiment that includes such optional charge
pump circuits, the host voltage V.sub.H can also be coupled to the
memory block 408 via the power bus 414.
[0044] FIG. 5 is a block diagram of a memory system 500 according
to yet another embodiment of the invention. The memory system 500
couples to a host 502. The host 502 and the memory system 500
communicate over a host I/O bus. The host 502 also supplies a host
voltage V.sub.H to the memory system 500.
[0045] The memory system 500 includes a memory controller 504 and
memory blocks 506 and 508. The memory controller 504 and the memory
blocks 506 and 508 communicate over an I/O bus. The memory system
500 also includes a voltage regulator 510. In this embodiment, the
voltage regulator 510 represents a separate functional unit from
the memory controller 504 or the memory blocks 506 and 508.
Typically, the voltage regulator 510 is provided as a separate
semiconductor die or chip within the memory system 500. The voltage
regulator 510 receives the host voltage V.sub.H over a link 512.
The link 512 can also couple the host voltage V.sub.H to the memory
block 506. The voltage regulator 510 produces a first supply
voltage V1. The voltage regulator 510 supplies the first supply
voltage V1 to the memory controller 504 and the memory block
506.
[0046] In addition, the memory block 506 includes charge pump
circuitry 514. The charge pump circuitry 514 operates to produce at
least one additional supply voltage. In this embodiment, it is
assumed that the charge pump circuitry 514 produces a second supply
voltage V2 and a third supply voltage V3. The charge pump circuitry
514 receives the host voltage V.sub.H as well as the first supply
voltage V1, and thus is able to produce the supply voltages V2 and
V3 using either or both of those source voltages. By using the host
voltage V.sub.H, the charge pump circuitry 514 is often able to
more efficiently produce either of the supply voltages V2 or V3
because less "charge pumping" is required.
[0047] The memory system 500 also includes a power bus 516. The
power bus 516 couples the supply voltages V1, V2 and V3 to the
memory block 508. The supply voltages V1, V2 and V3 are thus input
to the memory block 508 via the power bus 516. In other words, the
memory block 508 does not generate any of the supply voltages.
Indeed, the memory block 508 typically does not include any charge
pump circuitry. However, if desired, the memory block 508 could
include a back-up charge pump circuit for use should the primary
charge pump circuitry 514 fail.
[0048] In the embodiments of the invention illustrated in FIGS.
2-5, the memory systems included two memory blocks. However, it
should be noted that the memory systems can more generally include
two or more memory blocks. Typically, additional memory blocks
would be added to the memory systems to increase their data storage
capacity. These additional memory blocks would normally be
configured and/or operate as do the memory blocks 208, 308, 408 or
508. Also, in any of the embodiments of the invention discussed
above, optional charge pump and/or regulator circuitry can be
provided in one or more of the memory blocks. Such optional charge
pump and/or regulator circuitry can serve as a backup or secondary
function in case the primary charge pump and/or regulator circuitry
becomes inoperable. Additionally or alternatively, the optional
charge pump and/or regulator circuitry can operate to provide
additional internal voltage generation within the memory blocks in
cases where the necessary voltages needed by the memory blocks are
not supplied to the memory blocks.
[0049] The invention is suitable for use with both single-level
memories and multi-level memories. The memories or memory blocks
are data storage devices that include data storage elements. The
data storage elements can be based on semiconductor devices (e.g.,
floating-gate) or other types of devices. In multi-level memories,
each data storage element stores two or more bits of data.
[0050] The invention can further pertain to an electronic system
that includes a memory system as discussed above. Memory systems
(i.e., memory cards) are commonly used to store digital data for
use with various electronics products. The memory system is often
removable from the electronic system so the stored digital data is
portable. The memory systems according to the invention can have a
relatively small form factor and be used to store digital data for
electronics products such as cameras, hand-held or notebook
computers, network cards, network appliances, set-top boxes,
hand-held or other small audio players/recorders (e.g., MP3
devices), and medical monitors.
[0051] The advantages of the invention are numerous. Different
embodiments or implementations may yield one or more of the
following advantages. One advantage of the invention is that
generation and distribution of supply voltages are made more cost
effective. Another advantage of the invention is that noise from
generation of different voltage levels does not hinder memory
access performance. Still another advantage of the invention is
that reliable, high performance memory systems can be obtained. Yet
still another advantage of the invention is that memory systems can
be implemented with low power consumption and more flexibility in
controller design.
[0052] The many features and advantages of the present invention
are apparent from the written description and, thus, it is intended
by the appended claims to cover all such features and advantages of
the invention. Further, since numerous modifications and changes
will readily occur to those skilled in the art, it is not desired
to limit the invention to the exact construction and operation as
illustrated and described. Hence, all suitable modifications and
equivalents may be resorted to as falling within the scope of the
invention.
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