U.S. patent application number 09/986339 was filed with the patent office on 2002-08-01 for fabrication of periodic surface structures with nanometer-scale spacings.
Invention is credited to Ober, Christopher K., Sass, Stephen L., Suzuki, Yuri.
Application Number | 20020102428 09/986339 |
Document ID | / |
Family ID | 22617887 |
Filed Date | 2002-08-01 |
United States Patent
Application |
20020102428 |
Kind Code |
A1 |
Sass, Stephen L. ; et
al. |
August 1, 2002 |
Fabrication of periodic surface structures with nanometer-scale
spacings
Abstract
The periodic stress and strain fields produced by a pure twist
grain boundary between two single crystals bonded together in the
form of a bicrystal are used to fabricate a two-dimensional surface
topography with controllable, nanometer-scale feature spacings
(e.g., from 50 nanometers down to 1.5 nanometers). The spacing of
the features is controlled by the misorientation angle used during
crystal bonding. One of the crystals is selected to be thin, on the
order of 5-100 nanometers. A buried periodic array of screw
dislocations is formed at the twist grain boundary. To bring the
buried periodicity to the surface, the thin single crystal is
etched to reveal an array of raised elements, such as pyramids,
that have nanometer-scale dimensions. The process can be employed
with numerous materials, such as gold, silicon and sapphire. In
addition, the process can be used with different materials for each
crystal such that a periodic array of misfit dislocations is formed
at the interface between the two crystals.
Inventors: |
Sass, Stephen L.; (Ithaca,
NY) ; Ober, Christopher K.; (Ithaca, NY) ;
Suzuki, Yuri; (Ithaca, NY) |
Correspondence
Address: |
William A. Blake,
Jones,Tullar & Cooper, P.C.
Eads Station
P.O. Box 2266
Arlington
VA
22202
US
|
Family ID: |
22617887 |
Appl. No.: |
09/986339 |
Filed: |
November 8, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09986339 |
Nov 8, 2001 |
|
|
|
09730587 |
Dec 7, 2000 |
|
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|
60169951 |
Dec 9, 1999 |
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Current U.S.
Class: |
428/612 ; 117/1;
G9B/5.295 |
Current CPC
Class: |
Y10S 428/926 20130101;
G11B 2005/0002 20130101; Y10T 428/12889 20150115; C30B 33/06
20130101; G11B 5/74 20130101; Y10T 428/12674 20150115; Y10S 117/902
20130101; Y10T 428/12993 20150115; B82Y 25/00 20130101; C30B 29/605
20130101; B82Y 40/00 20130101; Y10T 428/12472 20150115; G11B 5/84
20130101; C30B 33/00 20130101; Y10T 428/12646 20150115; H01F 1/009
20130101; H01F 41/30 20130101 |
Class at
Publication: |
428/612 ;
117/1 |
International
Class: |
C30B 033/06 |
Goverment Interests
[0002] This invention arose out of research sponsored by the
National Science Foundation (NSF) under Grant Nos. DMR-96-32275 and
ECS-97-11208. The Government has certain rights in the invention.
Claims
1. A method for fabrication of nanometer-scale two dimensionally
periodic surface structures comprising the steps of: a) providing
first and second crystals, said second crystal having a thickness
of between 5 and 100 nanometers; b) bonding said first and second
crystals together misoriented at an angle about a surface normal of
said first and second crystals, thereby forming a twist boundary
between said first and second crystals and producing periodic
stress and strain fields that generate a buried nanometer-scale
periodic structure extending into said second crystal; and c)
exposing said periodic structure.
2. The method of claim 1, wherein said step of exposing is carried
out by etching said second crystal.
3. The method of claim 1, wherein said step of bonding further
comprises bonding said first and second crystals at an angle of
11.degree. or less so that said periodic structure includes a
plurality of features that are spaced from one another by at least
1.5 nanometers.
4. The method of claim 1, wherein said second crystal is selected
to have a thickness of between 30 and 50 nanometers.
5. The method of claim 1, wherein said first and second crystals
are formed from the same material.
6. The method of claim 5, wherein said first and second crystals
are formed from a material selected from the group consisting of
gold, sapphire or silicon.
7. The method of claim 1, wherein said first and second crystals
are formed of different materials.
8. The method of claim 7, wherein said first and second crystals
are formed from different materials selected from the group
consisting of gold, sapphire or silicon.
9. A bicrystal structure comprising: a) first and second crystals,
said second crystal having a thickness of between 5 and 100
nanometers and being bonded to said first crystal at an angle about
a surface normal of said first and second crystal, thereby forming
a twist boundary between said first and second crystals; and b) an
exposed nanometer-scale periodic structure formed in said second
crystal by periodic stress and strain fields produced by said twist
boundary.
10. The structure of claim 9, wherein said first and second
crystals are bonded at an angle of 11.degree. or less, and said
periodic structure includes a plurality of features that are spaced
from one another by at least 1.5 nanometers.
11. The structure of claim 9, wherein said second crystal has a
thickness of between 30 and 50 nanometers.
12. The structure of claim 9, wherein said first and second
crystals are formed from the same material.
13. The structure of claim 12, wherein said first and second
crystals are formed from a material selected from the group
consisting of gold, sapphire or silicon.
14. The structure of claim 9, wherein said first and second
crystals are formed of different materials.
15. The structure of claim 14, wherein said first and second
crystals are formed from different materials selected from the
group consisting of gold, sapphire or silicon.
16. The structure of claim 9, wherein said nanometer-scale periodic
structure comprises a two dimensional array of raised elements.
17. The structure of claim 16, wherein said nanometer-scale
periodic structure comprises a two dimensional array of pyramid
shaped elements.
18. The structure of claim 16, wherein each of said elements in
said array is spaced from an adjacent element in said array by 100
nm or less.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a Continuation of U.S. Application Ser.
No. 09/730,587, filed Dec. 7, 2000, which claims the benefit, under
35 USC 119(e), of U.S. Provisional Application No. 60/169,951,
filed Dec. 9, 1999.
BACKGROUND OF THE INVENTION
[0003] 1. Field of the Invention
[0004] The present invention relates in general to a technique for
fabricating patterned crystals having two dimensionally periodic
surface structures with nanometer-scale spacings.
[0005] 2. Description of the Background Art
[0006] As the demand for smaller and smaller electronic devices,
magnetic recording media, etc., has increased, a need has been
created for improved fabrication processes for making such devices.
Many such devices are or can be typically formed on substrates that
have two-dimensional patterns of periodic surface structures that
are used for the subsequent formation of the devices. The reduced
size demands for the devices require that the spacings between the
periodic structures be on the order of less than 100 nm.
Unfortunately, previously known techniques for forming
nanometer-scale patterns are not commercially feasible. For
example, a number of lithographic methods exist that can be used to
form these types of patterned structures. These methods include
creating patterns in polymers, called resists, using
microlithography based on short wavelength UV radiation or electron
beams. Patterns can be formed because the solubility of polymers is
changed by the imaging radiation, and when exposed to a solvent a
portion of the polymer film is removed quickly to create the image.
However, producing dimensions on a length-scale of less than 100 nm
using these techniques is difficult and can be carried out only
using very special imaging tools and materials.
[0007] The tremendous success of scanning probe microscopes has
opened the way for the development of another fabrication technique
known as proximal probe lithography. Very briefly, proximal probe
lithography involves the use of a scanning tunneling (STM) or
atomic force microscope (AFM). The techniques range from using the
STM to define a pattern in a medium which is subsequently
replicated in the underlying material, to STM induced materials
deposition, and STM and AFM manipulation of nanometer scale
structures. However, there is a significant amount of instrumental
evolution that needs to take place before these proximal probe
techniques can be practical in a high throughput environment. As a
result, a need therefore still remains for a technique that can be
employed to form nanometer-scale periodic structures and arrays
that is simple and commercially practical.
SUMMARY OF THE INVENTION
[0008] The present invention fulfills the foregoing need through
provision of a technique for fabricating nanometer-scale periodic
arrays in which two crystals, each comprised of single crystals of
any suitable material, are bonded together misoriented at an angle
relative to one another about a common surface normal, thereby
forming a bicrystal structure. One of the crystals is selected to
be thin, on the order of 5 to 100 nanometers. The presence of the
misorientation angle results in the formation of a twist grain
boundary between the two crystals that produces periodic stress and
strain fields with spacings that are directly related to the
misorientation angle, and are in the nanometer-scale range (e.g.,
from 50 nanometers down to 1.5 nanometers). At small misorientation
angles, these stress and strain fields result from the presence of
crystal defects, known as dislocations, at the interface between
the crystals. Periodic surface structures with spacings that are
the same as the spacings of the stress and strain fields can be
exposed through a process such as etching. The spacings of these
periodic structures are controlled by the misorientation angle used
during bonding.
[0009] As an example, a thick and a thin gold (100) single crystal
can be bonded together to form a bicrystal containing a small angle
twist grain boundary. Subsequent etching of the thin single crystal
exposes pyramidal features having nanometer scale dimensions. The
subject technique is also suitable for use with other materials as
well, including, for example, silicon and sapphire. The invention
can also be used with two different materials bonded together to
form a bicrystal that contains a periodic array of misfit
dislocations at the interface. Again, by superimposing a twist
misorientation, the spacing of the surface features can be varied
by selection of the misorientation angle.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The features and advantages of the invention will become
apparent from the following detailed description of a preferred
embodiment thereof, taken in conjunction with the accompanying
drawings, in which:
[0011] FIG. 1 is a schematic illustration of the geometry
associated with the twist bonding of a thin (001) single crystal to
a bulk (001) single crystal;
[0012] FIGS. 2A and 2B are graphical depictions of the Moire
pattern created by the two planes of atoms immediately adjacent to
the grain boundary between two twist bonded crystals with no
relaxation and with relaxation, respectively;
[0013] FIG. 3 is a schematic illustration of the dislocation array
present at a buried twist grain boundary;
[0014] FIG. 4 is a schematic illustration of a bicrystal after
etching; and
[0015] FIGS. 5A-5C are schematic illustrations showing one example
of a bicrystal bonding process that can be employed in the present
invention.
DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT
[0016] Turning now to a more detailed consideration of a preferred
embodiment of the present invention, FIG. 1 illustrates the
geometry associated with the twist bonding of a first, thin (001)
single crystal 10 to a second, bulk (001) single crystal 12
misoriented by an angle .theta. about a common normal with respect
to one another, thereby creating a twist grain boundary 14 between
the two crystals 10 and 12. A twist grain boundary is a grain
boundary between two crystals that have the same surface normal and
are rotated with respect to one another about this normal.
[0017] With reference to FIGS. 2A and 2B, when the two single
crystals 10 and 12 are initially brought into contact, a misfit
exists between the two lattices along the boundary plane if no
structural relaxation occurs. FIG. 2A shows the Moire pattern
created by the two planes of atoms immediately adjacent to the
grain boundary with no relaxation. This configuration is a
high-energy state due to the high distortion in the atomic bond
lengths across the grain boundary. However, when the crystals 10
and 12 are bonded together, the regions of high misfit relax into
an array of screw dislocations 16 to reduce the grain boundary
energy, thereby resulting in a grain boundary structure as shown in
FIG. 2B. The planar periodic array of screw dislocations 16 formed
in the twist boundary has an associated stress and strain field
that penetrates a distance d into the neighboring single crystals.
Thus, if the top crystal 10 is suitably thin, i.e. with thickness
less than d, then the periodic stress and strain field of the
buried grain boundary will influence the outer surface state of
stress of the crystal 10, potentially inducing a structure with
identical periodicity to that of the twist grain boundary. The
preferable thickness of the top crystal substrate 10 is between 5
and 100 nanometers, with the most preferable thickness being
between 30 and 50 nanometers. It should be noted that the thickness
of the bulk crystal 12 is not important, but would typically be on
the order of 500 microns.
[0018] FIG. 3 shows a schematic diagram of a bicrystal structure 18
that is formed when the thin, top crystal 10 is bonded to the
bottom, bulk crystal 12 misoriented by an angle .theta. about a
common normal with respect to one another. The bonding creates the
array of screw dislocations 16 that are present at the buried twist
grain boundary 14. For small-angle boundaries, the dislocation
spacing is determined by Frank's Rule, where b is the Burgers
vector:
d.apprxeq..vertline.b.vertline./.theta. (1)
[0019] while the general equation is:
2d=.vertline.b.vertline./sin(.theta./2) (2)
[0020] For all face-centered-cubic (f.c.c.) materials it is
expected that the Burgers vector of the screw dislocations is of
the form a/2<110>. Therefore, for f.c.c. gold a.sub.Au=4.078
.ANG. giving .vertline.b.sub.Au.vertline.=2.884 .ANG.. Table 1
shows the dislocation spacings for gold twist boundaries of various
misorientation angles as calculated by Frank's Rule. As may be
seen, the dislocation spacing ranges from 100 nanometers down to
1.5 nanometers as the misorientation angle is varied from
0.165.degree. to 11.0.degree..
1TABLE 1 Dislocation spacings in Au (100) twist boundaries Theta
(.degree.) .sup.dAu.sup.(nm) 0.165 100.0 0.33 50.0 0.7 23.6 1.0
16.5 1.5 11.0 2.0 8.3 3.0 5.5 4.0 4.1 6.0 2.8 8.0 2.1 11.0 1.5
[0021] If the top crystal 10 is suitably thin, then the stress and
strain field produced by the buried grain boundary 14 will
influence an exposed top surface 20 of the thin crystal 10. One way
to bring the buried periodicity to the surface is to use an etchant
(e.g., chemical etching, ion etching). Since the dislocation cores
have higher energies than the surrounding regions, an etchant would
attack these areas more rapidly than the areas between the
dislocations. Regardless of the technique employed to expose the
buried periodic structure resulting from the screw dislocations 16,
the resultant bicrystal structure 18 will appear as illustrated in
FIG. 4, with a two-dimensional periodic array of raised elements 22
being formed on the exposed top surface 20 of the thin crystal 10
having nanometer-scale spacings from one another.
[0022] To prove that the theory of the present invention is
correct, nanometer-scale surface structures were produced on the
surface of gold bicrystals. The fabrication of gold periodic
templates involves the following four steps as illustrated in FIGS.
5A-5C. First, as illustrated 15 in FIG. 5A, both thick (500 nm) and
thin (25-50 nm) (001) oriented Au single crystals 30 and 32 were
produced by deposition on first and second (001) NaCl substrates 34
and 36, respectively. Next, the thick and thin Au crystals 30 and
32 were bonded together by heating for 1.5 hours at 325.degree. C.
under a load of .about.1 MPA to form a twist grain boundary 38 as
illustrated in FIG. 5B. The NaCl substrate 36 was removed from the
thin Au crystal 32 by dissolution in water as illustrated in FIG.
5C. Finally, a top, exposed surface 40 of the thin crystal 32 was
etched using a potassium iodide-iodine solution in water, to bring
the buried periodicity to the surface.
[0023] To evaluate the resulting structure, transmission electron
microscopy was used to characterize the buried grain boundary
structure, while contact mode atomic force microscopy (AFM) was
used to characterize the surface structure. The electron microscope
image showed the presence of a square array of dislocations with
40-nanometer spacing, while the AFM images showed the presence of
pyramidal features 7 nanometers high and 40 nanometers on edge.
[0024] The process of the subject invention can also be used to
produce two dimensionally periodic surface structures in other
materials, including silicon and sapphire. Each different material
can be processed following the general scheme described above using
conditions specific to that material. For silicon, the starting
single crystals are in the form of a 0.5 mm thick single crystal
wafer and a silicon-on-insulator (SOI) wafer, which consists of an
.about.100 nanometer thick silicon single crystal separated from
the underlying silicon single crystal handle wafer by an .about.400
nanometer thick silicon dioxide film. The bonding is carried out in
the temperature range of 900 to 1200.degree. C. under a 1.5 MPA
load in a reducing atmosphere, such as hydrogen gas or a
hydrogen-argon gas mixture. After bonding, the silicon handle wafer
is removed from the thin single silicon crystal by etching the
silicon dioxide film using hydrofluoric acid, leaving a specimen
geometry as shown in FIG. 1. As before, etching of the silicon thin
single crystal is then carried out, using one of several etchants,
to bring the buried periodicity to the surface.
[0025] The process of the present invention can also be used with
two different materials that are bonded together to form a
bicrystal. In this case, a periodic array of misfit dislocations
would be formed at the interface between the two crystals, and the
spacing of the misfit dislocations would be determined by the
difference in the lattice parameters between the two different
materials. As before, the periodic spacing can be controlled by
superimposing a twist misorientation upon the misfit structure.
[0026] The structures formed in accordance with the present
invention have a number of applications. For example, they can be
used as ultra-fine scale templates for biological and polymeric
molecular assembly, for magnetic recording media and quantum dot
arrays, and for nano-electronic applications.
[0027] Although the invention as been disclosed in terms of a
preferred embodiment and variations thereon, it will be understood
that numerous additional modifications and variations could be made
thereto without departing from the scope of the invention as
defined by the following claims.
* * * * *