U.S. patent application number 10/003103 was filed with the patent office on 2002-08-01 for multilayer printed wiring board and a process of producing same.
This patent application is currently assigned to Hoya Corporation. Invention is credited to Fushie, Takashi, Kagatsume, Takeshi, Matsui, Shigekazu.
Application Number | 20020100608 10/003103 |
Document ID | / |
Family ID | 26478246 |
Filed Date | 2002-08-01 |
United States Patent
Application |
20020100608 |
Kind Code |
A1 |
Fushie, Takashi ; et
al. |
August 1, 2002 |
Multilayer printed wiring board and a process of producing same
Abstract
A multilayer printed wiring board which permits the formation of
fine wiring patterns, thereby increasing the density of wiring
patterns. Using photosensitive glass having a coefficient of
thermal expansion close to that of a copper film as a core
substrate, a through hole is formed in the photosensitive glass by
photolithography, a sputtering silicon oxide layer and a sputtering
silicon nitride layer are formed to prevent leak of alkali metal
ions from the photosensitive glass, a sputtering chromium layer, a
sputtering chromium-copper layer and a sputtering copper layer are
formed to enhance the adhesion strength between the copper film and
the sputtering silicon oxide layer, and a copper film of 1 to 20
.mu.m thick is formed. With resin filled into the interior of the
through hole, a wiring layer is patterned by etching, an insulating
layer is formed, and the surface is covered with a surface
treatment layer and a cover coat.
Inventors: |
Fushie, Takashi; (Tokyo,
JP) ; Kagatsume, Takeshi; (Tokyo, JP) ;
Matsui, Shigekazu; (Nirasaki-shi, JP) |
Correspondence
Address: |
ARMSTRONG,WESTERMAN & HATTORI, LLP
1725 K STREET, NW.
SUITE 1000
WASHINGTON
DC
20006
US
|
Assignee: |
Hoya Corporation
Tokyo
JP
|
Family ID: |
26478246 |
Appl. No.: |
10/003103 |
Filed: |
December 6, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10003103 |
Dec 6, 2001 |
|
|
|
09579270 |
May 26, 2000 |
|
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Current U.S.
Class: |
174/255 ;
257/E23.174 |
Current CPC
Class: |
H01L 2924/0002 20130101;
H05K 3/467 20130101; H05K 2201/0179 20130101; H05K 3/426 20130101;
H05K 2201/0175 20130101; H05K 1/0306 20130101; H05K 2201/0959
20130101; Y10T 29/49165 20150115; H01L 2924/0002 20130101; H05K
2201/09536 20130101; H05K 3/388 20130101; H05K 3/4605 20130101;
H01L 23/5384 20130101; H01L 2924/09701 20130101; H01L 2924/00
20130101; Y10T 428/24926 20150115; H05K 3/4602 20130101; H05K
2201/0154 20130101; H05K 2201/068 20130101 |
Class at
Publication: |
174/255 |
International
Class: |
H05K 001/03 |
Foreign Application Data
Date |
Code |
Application Number |
May 27, 1999 |
JP |
11-147811 |
May 22, 2000 |
JP |
2000-149570 |
Claims
What is claimed is:
1. A multilayer printed wiring board comprising: a glass substrate
having a through hole connecting opposite surfaces thereof; a
plurality of insulating layers and wiring layers formed on the
surfaces of said glass substrate; and a conducting portion having a
conductive film formed on an inner wall surface of the through hole
and providing conductor connection between the opposite surfaces of
said glass substrate, wherein the conductive film has a thickness
of 1 to 20 .mu.m.
2. A multilayer printed wiring board comprising: a glass substrate
having a through hole connecting opposite surfaces thereof; a
plurality of insulating layers and wiring layers formed on the
surfaces of said glass substrate; and a conducting portion having a
conductive film formed on an inner wall surface of the through hole
and providing conductor connection between the opposite surfaces of
said glass substrate, wherein a protective layer is formed so as to
cover at least the conductive film.
3. The multilayer printed wiring board according to claim 1 or 2,
wherein the conductive film comprises a film continuous with the
wiring layer.
4. The multilayer printed wiring board according to any one of
claims 1 through 3, wherein the wiring layer has a land width of 10
.mu.m or less.
5. The multilayer printed wiring board according to any one of
claims 1 through 4, wherein the through hole is filled with a
protective film.
6. The multilayer printed wiring board according to any one of
claims 1 through 5, wherein the through hole has a diameter of 30
to 150 .mu.m.
7. The multilayer printed wiring board according to any one of
claims 1 through 6, wherein the surfaces of the glass substrate and
at least part of the wall surface of the through hole are covered
with an ion blocking layer mainly comprising an insulating
film.
8. The multilayer printed wiring board according to any one of
claims 1 through 7, wherein an adhesion-reinforcing layer is
interposed between the wiring layer and the glass substrate to
enhance force of adhesion between the wiring layer and the glass
substrate.
9. The multilayer printed wiring board according to any one of
claims 1 through 8, wherein the glass substrate comprises
photosensitive glass.
10. The multilayer printed wiring board according to any one of
claims 1 through 9, wherein a wiring pattern formed of the wiring
layer has a line width of 3 to 50 .mu.m.
11. A process of producing a multilayer printed wiring board,
comprising the steps of: forming a through hole in a glass
substrate so as to connect opposite surfaces thereof; forming a
plurality of insulating layers and wiring layers on the surfaces of
the glass substrate; coating the through hole with a conductive
film to provide conductor connection between the opposite surfaces
of the glass substrate; and covering the conductive film with a
protective layer.
12. The process according to claim 11, wherein the through hole
formation step is performed by laser beam machining.
13. The process according to claim 11, wherein the through hole
formation step is performed by photolithography.
14. The process according to any one of claims 11 through 13,
further comprising the step of modifying the glass substrate.
15. The process according to claim 14, wherein the glass substrate
is modified by crystallizing the entire glass substrate.
16. The process according to claim 15, wherein the crystallization
of the entire glass substrate is performed following the through
hole formation step.
17. The process according to any one of claims 11 through 16,
wherein the step of covering the conductive film with a protective
layer is performed by screen printing.
18. The process according to any one of claims 11 through 17,
further comprising the step of dealkalizing the glass
substrate.
19. The process according to any one of claims 11 through 18,
wherein the conductive film and the wiring layer are formed in an
identical step.
20. The process according to any one of claims 11 through 19,
wherein, prior to the formation of the wiring layer, an
adhesion-reinforcing layer comprising at least one layer is formed
in advance to enhance force of adhesion with the wiring layer.
21. The process according to any one of claims 11 through 20,
further comprising the step of polishing at least one of the
opposite surfaces of the glass substrate after the conductive film
is covered with resin.
22. The process according to any one of claims 11 through 21,
further comprising the step of forming a barrier layer on the
wiring layer to protect the wiring layer.
23. The process according to any one of claims 11 through 22,
further comprising the step of forming a wiring pattern of the
wiring layer by photolithography, the wiring pattern having a line
width of 3 to 50 .mu.m.
24. The process according to any one of claims 11 through 23,
wherein the insulating layer is formed on one surface of the glass
substrate at a time.
Description
BACKGROUND OF THE INVENTION
[0001] (1) Field of the Invention
[0002] The present invention relates to a multilayer printed wiring
board having a multilayer wiring pattern and a process of producing
same, and more particularly, to a multilayer printed wiring board
which permits the formation of high-density wiring patterns and a
production process therefor.
[0003] (2) Description of the Related Art
[0004] In recent years, MCM (Multi Chip Module) having a plurality
of bare-chip LSIs mounted at high density on a multilayer wiring
board has come to be widely used. MCM is used in various types of
OA equipment, mobile communication equipment, industrial equipment,
etc., such as in notebook computers and mobile phones, and has been
greatly contributing to the reduction in size and weight of such
equipment. In the field of notebook computers, mobile phones and
the like, further reduction of their size and weight is expected in
future as well, and thus there will inevitably be a demand for
corresponding miniaturization of MCM.
[0005] Requisites for the miniaturization of MCM include reduction
in size of LSIs to be mounted, high-density formation of wiring
patterns, etc. In the case of a flip chip used as an LSI, its pad
pitch is said to become as small as 0.07 mm or thereabout in
future. Accordingly, a multilayer wiring board also, on which flip
chips are mounted, needs to be formed with high-density wiring
patterns matching such fine pad patterns.
[0006] As such multilayer wiring boards, a ceramic wiring board
using a ceramic material and a buildup wiring board using a
glass-reinforced epoxy resin etc. are generally known. A ceramic
wiring board is produced using a green sheet, and a through hole is
formed in the green sheet by punching. A wiring pattern is printed
on the green sheet by using an electrically conductive ink. A large
number of green sheets thus formed with the through hole and the
wiring pattern are stacked up and are baked at high temperature
under high pressure, thereby forming a wiring board having layered
wiring patterns. To produce a buildup wiring board, on the other
hand, a copper-clad, glass-reinforced epoxy resin is used as a
starting material. After a through hole is formed using a drill, a
conductive layer is formed on the inner wall of the through hole by
plating to achieve conductor connection between the opposite
surfaces of the copper-clad, glass-reinforced epoxy resin.
Subsequently, a wiring pattern (hereinafter core layer) is formed,
and an organic insulating layer (hereinafter buildup layer) is
formed on one or both surfaces of the material having the wiring
formed thereon. Then, the buildup layer alone is removed using a
laser or by etching at locations corresponding to interlayer
connecting portions, and the individual layers are interconnected
by means of plating, thereby forming a multilayer wiring board.
[0007] In the case of the ceramic wiring board, however, since the
wiring pattern is printed on a green sheet, it is difficult to form
a high-density wiring pattern.
[0008] Further, in the ceramic wiring board, a through hole is
formed by punching, and thus it is difficult to form a
small-diameter through hole. As a result, the land has an increased
width corresponding to the diameter of the through hole, also
making it difficult to enhance the density of the wiring
pattern.
[0009] On the other hand, in the case of the buildup wiring board,
the coefficient of thermal expansion (16 ppm/.degree.C.) of the
plated copper formed between the copper foil constituting the core
layer and the glass-reinforced epoxy resin greatly differs from the
coefficient of thermal expansion (80 ppm/.degree.C.) of the
glass-reinforced epoxy resin in the thickness direction thereof. In
order to eliminate inconvenience such as wiring disconnection
caused by the difference in the coefficient of thermal expansion,
therefore, the thickness of the plated copper must be 20 .mu.m or
more. Further, the underside of the copper foil constituting the
core layer is roughened in the order of 3 to 5 .mu.m to ensure
satisfactory adhesion strength when the copper foil is laminated on
the resin, and therefore, the roughening thickness of 3 to 5 .mu.m
must also be allowed for. Thus, even if an ultra-thin copper foil
is used, the total thickness of the copper foil, including the
plated copper and the roughening thickness, becomes 35 .mu.m or
more. When such a thick copper film is etched, the amount of side
etching tends to increase, giving rise to a problem that the wiring
of the core layer cannot be made fine.
[0010] Further, in the buildup wiring board, a through hole is
formed by drilling, and thus it is difficult to form a through hole
with a diameter of 0.3 mm or less. As a result, the land has an
increased width corresponding to the diameter of the through hole,
also making it difficult to enhance the density of the wiring
pattern.
SUMMARY OF THE INVENTION
[0011] The present invention was created in view of the above
circumstances, and an object thereof is to provide a multilayer
printed wiring board which permits the formation of fine wiring
patterns, thereby increasing the density of wiring patterns.
[0012] It is another object of the present invention to provide a
process of producing a multilayer printed wiring board which
permits the formation of fine wiring patterns, thereby increasing
the density of wiring patterns.
[0013] To achieve the first object, there is provided a multilayer
printed wiring board comprising a glass substrate having a through
hole connecting opposite surfaces thereof, a plurality of
insulating layers and wiring layers formed on the surfaces of the
glass substrate, and a conducting portion having a conductive film
formed on an inner wall surface of the through hole and providing
conductor connection between the opposite surfaces of the glass
substrate. In the multilayer printed wiring board, the conductive
film has a thickness of 1 to 20 .mu.m, and a protective layer is
formed so as to cover at least the conductive film.
[0014] To achieve the second object, a process of producing a
multilayer printed wiring board is provided which comprises the
step of forming a through hole in a glass substrate so as to
connect opposite surfaces thereof, the step of forming a plurality
of insulating layers and wiring layers on the surfaces of the glass
substrate, the step of coating the through hole with a conductive
film to provide conductor connection between the opposite surfaces
of the glass substrate, and the step of covering the conductive
film with a protective layer.
[0015] The above and other objects, features and advantages of the
present invention will become apparent from the following
description when taken in conjunction with the accompanying
drawings which illustrate preferred embodiments of the present
invention by way of example.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] FIG. 1 is a sectional view of a multilayer printed
board;
[0017] FIGS. 2(A) and 2(B) are sectional views illustrating a step
of forming a through hole in photosensitive glass, wherein FIG.
2(A) shows the formation of an exposure-crystallized portion at a
through hole-forming portion by irradiation of ultraviolet rays
onto the photosensitive glass, and FIG. 2(B) shows the formation of
a through hole by selective removal of the through hole-forming
portion by dissolution from the photosensitive glass;
[0018] FIG. 3(A) is a sectional view illustrating an ion blocking
layer formation step, and FIGS. 3(B) and 3(C) are sectional views
illustrating a wiring layer and conductive film formation step;
[0019] FIGS. 4(A), 4(B), 4(C) and 4(D) are sectional views of a
multilayer printed board in a conductive film coating step, wherein
FIG. 4(A) shows the formation of a sputtering chromium layer formed
as the barrier layer, FIG. 4(B) shows the filling of resin into the
through hole, FIG. 4(C) shows the removal of superfluous portions
of the resin protruding from the through hole, and FIG. 4(D) shows
the removal of the sputtering chromium layer formed as the barrier
layer to expose a copper film;
[0020] FIG. 5(A) is a sectional view of the multilayer printed
board from which etching portions have been removed, and FIG. 5(B)
is a sectional view of the multilayer printed board on which an
insulating layer has been formed;
[0021] FIG. 6(A) is a sectional view of the multilayer printed
board on which a wiring layer has been formed in a wiring layer
formation step, FIG. 6(B) is a sectional view of the multilayer
printed board of which the wiring layer has been patterned by again
performing an etching step and an insulating layer formation step,
and FIG. 6(C) is a sectional view of the multilayer printed board
illustrating a surface treatment step;
[0022] FIGS. 7(A), 7(B) and 7(C) are sectional views illustrating a
through hole formation step, wherein FIG. 7(A) shows an origin
positioning through hole formed in alkali-free glass, FIG. 7(B)
shows a through hole formed halfway in the alkali-free glass, and
FIG. 7(C) shows the through hole formed through the alkali-free
glass;
[0023] FIGS. 8(A) and 8(B) are sectional views illustrating another
through hole formation step, wherein FIG. 8(A) shows an origin
positioning through hole formed in alkali-free glass, and FIG. 8(B)
shows a through hole formed through the alkali-free glass;
[0024] FIGS. 9(A) and 9(B) are sectional views illustrating a
through hole formation step, FIG. 9(C) is a sectional view
illustrating a crystallization step, and FIG. 9(D) is a sectional
view illustrating a wiring layer and conductive film formation
step;
[0025] FIG. 10(A) is a sectional view illustrating a conductive
film coating step, and FIG. 10(B) is a sectional view illustrating
a resist pattern formation step;
[0026] FIG. 11(A) is a sectional view illustrating an etching step,
and FIG. 11(B) is a sectional view illustrating an insulating layer
formation step;
[0027] FIG. 12(A) is a sectional view illustrating a wiring layer
formation step, and FIG. 12(B) is a sectional view illustrating an
etching step and a surface treatment step;
[0028] FIG. 13 is a plan view showing an example of a wiring
pattern of landless structure; and
[0029] FIG. 14 is a schematic view of comb patterns formed for the
purpose of an ion migration accelerated test.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0030] Embodiments of the present invention will be hereinafter
described with reference to the drawings.
[0031] A first embodiment will be described first.
[0032] FIG. 1 is a sectional view of a multilayer printed board 1
according to this embodiment.
[0033] The multilayer printed board 1 has a photosensitive glass 2
which is a glass substrate constituting the core of the multilayer
printed board 1, a through hole 3 extending through the
photosensitive glass 2 from one to the other surface thereof, and
an ion blocking layer 4 for suppressing leak of alkali metal ions
etc. from the photosensitive glass 2.
[0034] In this embodiment, the ion blocking layer 4 is made up of a
sputtering silicon oxide layer 4a and a sputtering silicon nitride
layer 4b. A copper film 6, which is the lowermost wiring layer and
serves also as a conductive film for providing conductor connection
between the opposite surfaces of the photosensitive glass 2, is
formed on an adhesion-reinforcing layer 5 for maintaining and
enhancing the adhesion with the copper film 6. The
adhesion-reinforcing layer 5 includes a sputtering chromium layer
5a, a sputtering chromium-copper layer 5b, and a sputtering copper
layer 5c. The multilayer printed board further includes a copper
film 11 as a laminated wiring layer, an insulating layer 10
interposed between wiring layer patterns, a resin 8 serving as a
protective layer covering the copper film 6 inside the through hole
3, a surface treatment layer 12 covering a surface conducting
portion of the multilayer printed board 1, and a cover coat 13
covering the surface of the multilayer printed board 1 except the
surface conducting portion.
[0035] The glass substrate used in this case is made of a material
most suited as the core substrate in terms of characteristics
including smoothness, hardness and insulating performance, and may
be photosensitive glass as exemplified in this embodiment,
chemically strengthened glass such as soda-lime glass, crystallized
glass, alkali-free glass, aluminosilicate glass, etc.
[0036] The sputtering silicon nitride layer 4b is formed on the
opposite surfaces of the photosensitive glass 2, and the sputtering
silicon oxide layer 4a is formed on the outer surface of the
sputtering silicon nitride layer 4b. The insulating layer 10 and
the sputtering chromium layer 5a are situated on the outer surface
of the sputtering silicon oxide layer 4a, and on the outer surface
of the sputtering chromium layer 5a, the sputtering chromium-copper
layer 5b and the sputtering copper layer 5c are successively
arranged. The copper film 6 is formed on the outer surface of the
sputtering copper layer 5c as well as on the inner wall surface of
the through hole 3, and conductor connection is established between
part of the copper film 6 formed on the outer surface of the
sputtering copper layer 5c and the copper film 6 formed on the
inner wall surface of the through hole 3. The resin 8 is filled
into the interior of the through hole 3 of which the inner wall
surface has been coated with the copper film 6. On the outer
surface of the wiring layer formed in this manner, the sputtering
chromium layer 5a and the sputtering chromium-copper layer 5b are
formed as the adhesion-reinforcing layer 5, and further, the copper
film 11 and the insulating layer 10 are formed as an outer layer.
The adhesion-reinforcing layer 5, the copper film 6 and the
insulating layer 10 are successively stacked in like manner on the
laminate structure, thus forming a laminated circuit pattern. As an
outermost layer of the laminated circuit pattern formed in this
manner, the cover coat 13 and the surface treatment layer 12 are
formed.
[0037] A process of producing the multilayer printed board 1 will
be now described.
[0038] The production process for the multilayer printed board 1
according to the present invention comprises a through hole
formation step, an ion blocking layer formation step, a wiring
layer and conductive film formation step, a conductive film coating
step, an etching step, an insulating layer formation step, a wiring
layer formation step, and a surface treatment step.
[0039] A step of modifying the glass substrate may be added as
needed. Characteristics of the glass to be modified include
physical characteristics such as hardness, flexural strength,
coefficient of thermal expansion, etc., optical characteristics
such as transmittance, refractive index, etc., chemical
characteristics such as ion migration properties etc., and
electrical characteristics such as dielectric constant, dielectric
loss tangent, etc.
[0040] The glass substrate can be modified by crystallizing the
glass substrate in its entirety, for example. By performing such
crystallization, it is possible to modify as desired the
characteristics of the glass substrate such as flexural strength,
coefficient of thermal expansion, and transmittance.
[0041] Further, the glass substrate may be modified for the purpose
of controlling the surface conditions of the substrate, for
example, smoothness, cleanness, wettability, etc.
[0042] FIG. 2 illustrates the step of forming the through hole 3 in
the photosensitive glass 2.
[0043] In the through hole formation step, first, a mask is placed
on the surface of the photosensitive glass 2, and ultraviolet rays
are selectively irradiated only onto a portion of the
photosensitive glass 2 where the through hole 3 is to be formed.
The material of the photosensitive glass 2 is not particularly
limited, and any material may be used insofar as it contains a
photosensitive component and shows photosensitivity. As the
photosensitive component, preferably at least one of, more
preferably two or more of Au, Ag, Cu.sub.2O and CeO.sub.2 are
contained.
[0044] As the glass substrate used in the present invention, a
photosensitive glass containing, for example, 55 to 85% SiO.sub.2,
2 to 20% Al.sub.2O.sub.3, and 5 to 15% Li.sub.2O
(SiO.sub.2+Al.sub.2O.sub.3+Li- .sub.2O>85%) as a basic
component; 0.001 to 0.05% Au, 0.001 to 0.5% Ag, and 0.001 to 1%
Cu.sub.2O as a photosensitive metallic component; and 0.001 to 0.2%
CeO.sub.2 as a photosensitizer, all by wt %, is especially
preferred.
[0045] The mask to be used for the formation of the through hole is
not particularly limited, and a mask of any desired type may be
used insofar as it has an opening corresponding in position to the
through hole to be formed, can be brought into close contact with
the photosensitive glass 2, and permits selective exposure of the
photosensitive glass 2. As such a mask, a mask having a pattern of
film formed on a thin transparent glass plate and substantially
opaque to the exposure light such as ultraviolet rays, for example,
a chromium film, may be used.
[0046] That portion of the photosensitive glass 2 at which the
through hole 3 is to be formed is selectively irradiated with
ultraviolet rays through the mask, whereupon an
exposure-crystallized portion 2a is formed due to the irradiation
at the through hole-forming portion, as shown in FIG. 2(A).
[0047] The glass substrate having the exposure-crystallized portion
2a formed therein is then subjected to heat treatment. The heat
treatment is preferably carried out at a temperature between the
transition point and yield point of the glass used. At temperatures
lower than the transition point, satisfactory heat treating effects
are not obtained, and at temperatures exceeding the yield point,
shrinkage occurs, possibly lowering the dimensional accuracy. The
heat treatment is preferably performed for a period of about 30
minutes to 5 hours.
[0048] Subsequently, the heat-treated photosensitive glass 2 is
immersed in dilute hydrofluoric acid and the exposure-crystallized
portion 2a alone is etched. Due to the etching, the through
hole-forming portion alone is selectively removed by dissolution
from the photosensitive glass 2, as shown in FIG. 2(B), so that the
through hole 3 is formed. By using a photolithography technique for
the through hole formation in the photosensitive glass 2, it is
possible to simultaneously form a desired number of through holes 3
with an aspect ratio of about 10. For example, where the
photosensitive glass 2 used has a thickness of about 0.3 to 1.5 mm,
a plurality of through holes with a small diameter of about 30 to
150 .mu.m can be formed simultaneously at desired locations. This
permits the formation of fine wiring patterns and also serves to
shorten the time required for the through hole formation step.
[0049] Where a landless structure is employed in which the land
width is reduced to a very small value or zero in order to increase
the density of wiring patterns, sufficiently large space can be
secured between the through holes and thus wiring can be arranged
also in the space between the through holes, expanding the degree
of freedom in wiring design.
[0050] Also, the through holes can be formed at a narrow pitch,
whereby the wiring density can be increased.
[0051] Prior to the formation of a thin film such as a wiring layer
on the substrate, a glass substrate modification step, for example,
crystallization of the entire glass substrate, may be additionally
carried out.
[0052] By adding such a step, it is possible to improve the
characteristics of the glass substrate, for example, to obtain
increased mechanical strength and heat resistance, compared with
the original photosensitive glass, to control the coefficient of
thermal expansion, and to suppress ion migration.
[0053] For example, where the glass substrate is in its entirety
crystallized to make the coefficient of thermal expansion of the
crystallized glass substrate close to that of a metallic material
constituting the wiring layer, defects such as wiring disconnection
or hole breakout can be prevented from being caused by repeated
expansion and contraction due to heat history, even if a landless
structure is employed to form a narrow-pitch, high-density wiring
pattern.
[0054] The crystallization of the entire glass substrate may be
performed following the formation of the through hole, by
irradiating ultraviolet rays onto the entire substrate and then
heat-treating the substrate. In this case, conditions for the
crystallization are suitably selected in accordance with
characteristics of the crystallized glass substrate to be obtained,
so as to control the kind, size, quantity, etc. of crystals to be
formed.
[0055] FIG. 3(A) is a sectional view illustrating the ion blocking
layer formation step in which the sputtering silicon oxide layer 4a
and the sputtering silicon nitride layer 4b are formed on the
opposite surfaces of the photosensitive glass 2.
[0056] In cases where the photosensitive glass 2 contains alkali
metal ions such as Li.sup.+, Na.sup.+, etc., measures need to be
taken against short circuit induced by ion migration. Ion migration
is a phenomenon that alkali metal ions move on an insulator with
long-sustained application of voltage and finally cause a short
circuit between electrodes, and is a cause of lowering of the
reliability of the multilayer printed board 1. According to this
embodiment, to prevent a short circuit from being caused by ion
migration, an ion blocking layer 4 consisting of the sputtering
silicon oxide layer 4a and the sputtering silicon nitride layer 4b
is formed on the opposite surfaces of the photosensitive glass 2,
thereby preventing the alkali metal ions from leaking from the
photosensitive glass 2 to the copper film 6, the insulating layer
10, etc. Consequently, even in the case where the glass used
contains ionic impurities, ion migration can be effectively
suppressed, and also sufficient insulation resistance is ensured
even if the film thickness is small.
[0057] When forming the ion blocking layer 4, first, a dealkalizing
process is performed to remove alkali metal ions contained in the
opposite surfaces of the photosensitive glass 2. The dealkalization
is carried out by immersing the photosensitive glass 2 in an
electrolyte such as a sulfuric acid solution, and then applying an
electric field to the photosensitive glass 2 to allow alkali metal
ions contained in the opposite surfaces of the photosensitive glass
2 to dissolve in the electrolyte.
[0058] After the dealkalization, the ion blocking layer 4 is formed
on each of the opposite surfaces of the photosensitive glass 2. The
ion blocking layer 4 may be made of either an organic material or
an inorganic material; preferably, the material used should have
good insulating performance, have a coefficient of thermal
expansion such that the difference in coefficient of thermal
expansion between the ion blocking layer and the glass is small,
and should also be excellent in heat resistance, moisture
resistance, and electrical characteristics. Such materials include,
for example, SiO.sub.2, Si.sub.3N.sub.4, Al.sub.2O.sub.3, etc.
Among these, SiO.sub.2 and Si.sub.3N.sub.4 are especially preferred
because they are free from defects such as pinholes, have high
integrity as an insulating film, and also are high in withstand
voltage.
[0059] The film formation method is not particularly limited and
sputtering, vacuum evaporation, CVD, etc. may be used; however,
sputtering is preferred since it provides good adhesion. In this
embodiment, the sputtering silicon nitride layer 4b is formed on
the opposite surfaces of the photosensitive glass 2, and the
sputtering silicon oxide layer 4a is formed on the outer surface of
the sputtering silicon nitride layer, as shown in FIG. 3(A).
Although in this embodiment the ion blocking layer 4 is formed
after dealkalizing the photosensitive glass 2, only one of the
dealkalizing process and the formation of the ion blocking layer 4
may be performed. The glass substrate referred to in relation to
the present invention includes those provided with the ion blocking
layer 4.
[0060] After completion of the ion blocking layer formation step,
the wiring layer and conductive film formation step is carried out.
FIGS. 3(B) and 3(C) are sectional views illustrating the wiring
layer and conductive film formation step.
[0061] The lowermost wiring layer is formed by plating or the like.
In cases where the adhesion between the material of the lowermost
wiring layer and the material of the ion blocking layer 4 on which
the lowermost wiring layer is formed is poor, the
adhesion-reinforcing layer 5 is interposed between the lowermost
wiring layer and the ion blocking layer 4, thereby to enhance the
strength of adhesion with the wiring layer. For the
adhesion-reinforcing layer 5, a material having good adhesion with
both the lowermost wiring layer and the ion blocking layer 4, for
example, chromium, tantalum, titanium, etc., is used, and a film
consisting of such a material is formed on the surface of the ion
blocking layer 4 by sputtering, vacuum evaporation, CVD, etc.
Alternatively, the adhesion-reinforcing layer 5 may have a
three-layer structure such that between a material having good
adhesion with the lowermost wiring layer and a material having good
adhesion with the ion blocking layer 4, a mixture of these
materials is interposed. In the case where no ion blocking layer is
formed, a material having good adhesion with both the lowermost
wiring layer and the core substrate is used for the
adhesion-reinforcing layer 5. Also in this case, the
adhesion-reinforcing layer 5 may have a three-layer structure, as
in the case of forming the ion blocking layer.
[0062] In this embodiment, copper is used as the material of the
lowermost wiring layer, and the adhesion-reinforcing layer 5 has a
three-layer structure consisting of the sputtering chromium layer
5a, which has good adhesion with the sputtering silicon oxide layer
4a, the sputtering copper layer 5c, which has good adhesion with
the copper film 6 as the lowermost wiring layer, and the sputtering
chromium-copper layer 5b interposed between these layers. FIG. 3(B)
is a sectional view showing the adhesion-reinforcing layer 5 having
this structure. In this embodiment, the adhesion-reinforcing layer
5 is formed by sputtering; specifically, as shown in FIG. 3(B), the
sputtering chromium layer 5a is formed on the sputtering silicon
oxide layer 4a, the sputtering chromium-copper layer 5b is formed
on the sputtering chromium layer, and the sputtering copper layer
5c is formed on the sputtering chromium-copper layer. The
individual layers constituting the adhesion-reinforcing layer 5
should preferably have as small a thickness as possible, taking
account of the amount of side etching in the subsequent wiring
layer patterning by etching, described later. If, however, the
thickness of each of the layers forming the adhesion-reinforcing
layer 5 is too small, the layer 5 may possibly be removed during a
pretreatment performed prior to the subsequent formation of the
copper film 6. Where chromium is used for the adhesion-reinforcing
layer 5, for example, the sputtering chromium layer 5a preferably
has a thickness of about 0.04 to 0.1 .mu.m. The sputtering
chromium-copper layer 5b, which is the intermediate layer,
preferably has a thickness of about 0.04 to 0.1 .mu.m, and the
sputtering copper layer 5c preferably has a thickness of about 0.5
to 1.5 .mu.m. Thus, in this step, a very thin adhesion-reinforcing
layer 5 with an overall thickness of 2 .mu.m or less is formed.
[0063] Subsequently, the wiring layer and the conductive film are
formed. In this embodiment, the lowermost wiring layer and the
conductive film are formed as a single copper film 6, as shown in
FIG. 3(C), and this copper film 6 is formed uniformly so as to
cover the surface of the adhesion-reinforcing layer 5 as well as
the inner wall surface of the through hole 3. Thus, the copper film
6 provides conductor connection between the opposite surfaces of
the multilayer printed board 1 via the through hole 3. The copper
film 6 is formed by plating such as electroplating and electroless
plating. Electroplating and electroless plating have their
respective advantages and disadvantages. Electroplating is
advantageous in that the time required for plating is short,
compared with electroless plating, but is disadvantageous in that
the deposited film is poor in uniformity and in adhesion. On the
other hand, electroless plating is advantageous in that the film
formed by electroless plating is excellent in uniformity and
adhesion, compared with that formed by electroplating, but is
disadvantageous in that longer time is required for plating.
Preferably, therefore, a copper layer of 1 .mu.m thick or less is
deposited first by electroless plating, and then the copper layer
is thickened by electroplating.
[0064] Like the adhesion-reinforcing layer 5 mentioned above, the
thickness of the copper film 6 should preferably be as small as
possible, in consideration of the amount of side etching. However,
if the multilayer printed board 1 is used in an environment in
which it undergoes repeated temperature changes, metal fatigue of
the copper film 6 may develop due to the difference in coefficient
of thermal expansion between the copper film 6 and the
photosensitive glass 2. To ensure connection reliability of the
copper film 6 without the possibility of metal fatigue, therefore,
the copper film 6 needs to have a somewhat large thickness. The
photosensitive glass 2 used in the present invention has a
coefficient of thermal expansion closer to that of copper, than a
core substrate using a glass-reinforced epoxy resin having a
coefficient of thermal expansion of 80 ppm/.degree.C. (Z
direction). For example, the photosensitive glass 2 has a
coefficient of thermal expansion of approximately 8.4
ppm/.degree.C. in a thickness direction thereof, which is almost
half the coefficient of thermal expansion of the copper film 6,
that is, 16 ppm/.degree.C. Accordingly, compared with the case of
using a glass-reinforced epoxy resin or the like, change of the
stress applied to the copper film 6 can be lessened, and as a
consequence, reliable connection is ensured even if the thickness
of the copper film 6 is reduced. In this embodiment, the thickness
of the copper film 6 is preferably set to about 1 to 20 .mu.m, more
preferably, about 4 to 7 .mu.m. If the thickness of the copper film
6 is smaller than 1 .mu.m, it is highly possible that disconnection
of the copper film 6 will be caused due to the metal fatigue
mentioned above; on the other hand, if the thickness of the copper
film 6 is larger than 20 .mu.m, then it is difficult to form a fine
wiring layer pattern.
[0065] The multilayer printed board 1 having the copper film 6
formed thereon is then subjected to the conductive film coating
step. FIG. 4 shows, in section, the multilayer printed board 1 in
the conductive film coating step.
[0066] In the conductive film coating step, a barrier layer is
formed first. The barrier layer is formed on the outer surface of
the copper film 6 except the inner wall surface of the through hole
3, to protect the copper film 6 during polishing, mentioned later.
Thus, polishing can be performed without damaging the copper film 6
having a very small thickness. The material of the barrier layer
should have mechanical strength high enough to withstand polishing,
and also should be easily removed from the copper film 6 since the
barrier layer needs to be removed after the polishing. As a
material having such characteristics, chromium, tantalum, titanium,
etc. are preferred, and using such a material, the barrier layer is
formed by sputtering, vacuum evaporation, CVD, plating, etc. FIG.
4(A) is a sectional view showing a sputtering chromium layer 7
formed as the barrier layer by sputtering using chromium. The
thickness of the barrier layer may vary depending on the kind of
the material used as the barrier layer, the kind of an abrasive
used and polishing conditions, but should preferably be as small as
possible in consideration of the subsequent removal of the barrier
layer following the polishing. For example, where chromium is used
as the material of the barrier layer and unnecessary portions of
resin are removed by roll grinding using a buffing material, the
barrier layer preferably has a thickness of about 0.1 .mu.m.
[0067] Then, as shown in FIG. 4(B), a resin 8 is selectively filled
into the through hole 3 by screen printing etc. The resin 8 used
may be either an insulating resin or a conductive resin. After the
resin 8 is filled, superfluous portions of the resin 8 protruding
from the through hole 3 are removed by a polishing machine using a
buffing material etc., as shown in FIG. 4(C). Following the
polishing, the sputtering chromium layer 7 alone is selectively
removed, so that the copper film 6 is exposed as shown in FIG.
4(D). Thus, the resin 8 is filled in order to protect the copper
film 6 formed on the inner wall surface of the through hole 3, and
accordingly, the thickness of the copper film 6 can be reduced.
Also, since the substrate surface inclusive of the through hole 3
can be made flat, a resist film for forming a resist pattern and
the insulating layer 10, mentioned later, can be formed easily.
Further, as a result of the resin filling, air in the interior of
the through hole 3 can be removed, and thus inconveniences caused
by expansion of air due to change in environmental temperature,
such as cracking of the insulating layer 10 etc., can be
eliminated, whereby the reliability is enhanced.
[0068] The etching step will be now described. FIG. 5(A) is a
sectional view of the multilayer printed board 1 from which etching
portions 9 have been removed by etching. In the etching step, a
resist pattern corresponding to the wiring layer pattern is formed
on the outer surface of the multilayer printed board 1 shown in
FIG. 4(D), and those portions of the copper film 6, sputtering
copper layer 5c, sputtering chromium-copper layer 5b and sputtering
chromium layer 5a which are not covered with the resist are removed
by etching, thus forming the lowermost wiring layer pattern. Since
all through holes 3 have been filled with the resin 8, the resist
used in this step may be liquid resist, dry film resist, or
electrodeposited resist. Also, the resist type may be either
positive or negative; however, positive resist is suited for the
formation of fine wiring pattern since it generally provides higher
resolution.
[0069] In the case of the patterning by etching, the surface region
near the resist can be etched almost congruently with the resist
pattern. However, with increasing distance from the resist, a shape
error between the resist pattern and the wiring pattern formed by
etching increases. Namely, the thicker the metal layer to be
etched, the larger shape error occurs in the lower or deeper
portion of the metal layer. To form a fine wiring pattern, such
error must be minimized, and to minimize the error, it is necessary
that the thickness of the metal layer should be as small as
possible. In this embodiment, since the photosensitive glass 2
having a coefficient of thermal expansion close to that of copper
is used as the core substrate, as mentioned above, the copper film
6 can be made as thin as approximately 1 to 20 .mu.m, and as a
consequence the lowermost wiring pattern can also be made fine. In
general, the thickness of the metal layer and the width of the
wiring pattern formed by etching are in the ratio 1:2; accordingly,
where the sputtering chromium layer 5a, the sputtering
chromium-copper layer 5b and the sputtering copper layer 5c have a
total thickness of about 0.5 to 5 .mu.m, the overall thickness of
the metal layer including the copper film 6 becomes 1.5 to 25
.mu.m, so that a wiring pattern with a width of about 3 to 50 .mu.m
can be formed. Preferably, the copper film 6 has a thickness of 4
to 7 .mu.m, and the sputtering chromium layer 5a, the sputtering
chromium-copper layer 5b and the sputtering copper layer 5c have an
overall thickness of 0.58 to 1.7 .mu.m, so that a wiring pattern
with a width of approximately 9 to 20 .mu.m can be formed.
[0070] The width of the land (land width) of the through hole
should preferably be 10 .mu.m or less, more preferably 8 .mu.m or
less, further preferably 5 .mu.m or less. The smaller the land
width of the through hole, the more space can be secured between
the through holes, so that additional wiring may be arranged, for
example, thus expanding the degree of freedom in wiring design.
[0071] Also, the through holes can be formed at a narrower pitch,
making it possible to increase the density of wiring pattern.
[0072] The insulating layer formation step will be now described.
FIG. 5(B) is a sectional view of the multilayer printed board 1 on
which an insulating layer has been formed.
[0073] In the insulating layer formation step, the insulating layer
10 is formed on one or both surfaces of the multilayer printed
board 1 which has been etched as shown in FIG. 5(A). As the
material of the insulating layer 10, those having a coefficient of
thermal expansion relatively close to that of the photosensitive
glass 2 and excellent in heat resistance and moisture resistance
are preferred. Polyimide resin, heat-resistant epoxy resin,
polyamide resin, etc. are preferred as organic materials, and glass
(SOG), SiO.sub.2, Si.sub.3N.sub.4, Al.sub.2O.sub.3, etc. are
preferred as inorganic materials. Organic materials generally have
a large coefficient of thermal expansion as compared with the
photosensitive glass 2; however, no particular problem arises if a
layer of an organic material of about 10 .mu.m thick is formed
because the coefficient of thermal expansion thereof shifts and
becomes substantially equal to that of the photosensitive glass
2.
[0074] In cases where an organic material is used for the
insulating layer 10, the insulating layer 10 is formed by spin
coating, curtain coating, slot coating or the like. In this
embodiment, since the transparent photosensitive glass 2 is used as
the core substrate, light to which one surface of the
photosensitive glass 2 is exposed transmits through the transparent
glass and may affect the patterning on the other surface.
Preferably, therefore, the insulating layer 10 is formed on one
surface at a time. Where an opaque photosensitive glass is used as
the core substrate, the light to which one surface of the glass is
exposed for the formation of the insulating layer 10 does not
affect the other surface, and accordingly, the opposite surfaces of
the glass may be simultaneously exposed to light.
[0075] On the other hand, in cases where an inorganic material is
used for the insulating layer 10, the insulating layer may be
formed by sputtering, vacuum evaporation, CVD, etc., besides the
aforementioned coating processes. After the insulating layer 10 is
formed, only those portions of the insulating layer 10 at which
conductive connection is to be established with a wiring layer
laminated in a subsequent step are selectively removed. In this
case, the insulating layer 10 is preferably removed (hereinafter
via hole) in conical form to improve the throwing power or
connectivity with respect to the conductive metal of other
layers.
[0076] After the via holes are formed as shown in FIG. 5(B), the
wiring layer formation step is carried out to form an additional
wiring layer. FIG. 6(A) is a sectional view of the multilayer
printed board 1 which has been subjected to the wiring layer
formation step to form a wiring layer.
[0077] In the wiring layer formation step, a film having good
adhesion with the insulating layer 10, for example, a film of
chromium, tantalum, titanium or the like, is formed on the exposed
surface of the insulating layer 10 and of the copper film 6 by
sputtering, vacuum evaporation, CVD, etc., and on the thus-formed
film, a film having good conductivity, for example, a copper film,
is formed. In this case, if the film having good adhesion with the
insulating layer 10 and the film to be formed on this film and
having good conductivity have poor adhesion at their interface, a
multilayer structure, for example, may be employed such that an
intermediate layer made of a mixture of the material forming the
film having good adhesion with the insulating layer 10 and the
material forming the film having good conductivity is interposed
between these films, thereby to improve the adhesion.
[0078] In the structure shown in FIG. 6(A), using chromium as the
material of the film having good adhesion with the insulating layer
10, a sputtering chromium layer 5a is formed by sputtering, then a
sputtering chromium-copper layer 5b is formed on the sputtering
chromium layer, and using copper having good conductivity, a copper
film 11 is formed by sputtering on the sputtering chromium-copper
layer. The film (e.g., sputtering chromium layer 5a) having good
adhesion with the insulating layer preferably has a thickness of
approximately 0.04 to 0.1 .mu.m, with which sufficient adhesion
strength can be obtained. Also, where copper is used to form the
film (e.g., copper film 11) having good conductivity, its thickness
may be about 1 to 20 .mu.m, with which reliable connection with the
via holes is ensured and also the electrical resistance is small.
In the case of the multilayer structure, the layer made of the
mixture material (e.g., sputtering chromium-copper layer 5b as the
intermediate layer) may have a thickness of 0.04 to 0.1 .mu.m, and
this thickness provides sufficient adhesion strength at the
interfaces.
[0079] After the wiring layer formation step, the etching step and
the insulating layer formation step are again carried out to form a
wiring layer pattern, as shown in FIG. 6(B). The wiring layer
formation step, the etching step and the insulating layer formation
step are thereafter repeated in the same manner as described above,
thereby forming wiring patterns one upon another.
[0080] After completion of the formation of laminated wiring
patterns, the surface treatment step is performed.
[0081] In the surface treatment step, surface conducting portions
of the outermost wiring layer are covered with a surface treatment
layer 12, and the remaining portion of the outermost layer is
covered with a cover coat 13, as shown in FIG. 6(C). The surface
treatment layer 12 is made of a material having good conductivity,
and solder, heat-resistant preflux, water-soluble preflux, nickel,
gold plate, etc. maybe used, for example. The cover coat 13 may be
made of the inorganic or organic material used in the insulating
layer 10, or solder resist etc. commonly known may be used.
[0082] In this manner, the photosensitive glass 2 having a
coefficient of thermal expansion close to that of the copper film 6
is used as the core substrate, and the copper film 6 having a small
thickness of 1 to 20 .mu.m is formed on the inner wall surface of
the through hole 3, so that the copper film 6 as the wiring layer
formed continuously with the copper film in the through hole can be
reduced in thickness, thus permitting the formation of fine wiring
pattern.
[0083] Also, the copper film 6 formed on the inner wall surface of
the through hole 3 is coated with the resin 8; therefore, even if
the copper film 6 has a small thickness, reliable connection is
ensured because the copper film is protected by the resin 8. This
permits reduction of the thickness of the copper film 6 as the
wiring layer formed continuously with the copper film 6 in the
through hole, making it possible to form a fine wiring pattern.
[0084] Further, using the photosensitive glass 2 as the core
substrate, the through hole-forming portion is selectively
irradiated with ultraviolet rays and the portion exposed to the
ultraviolet radiation is etched to form the through hole. It is
therefore possible to form small-diameter through holes with high
accuracy. Also, by modifying the glass substrate, it is possible to
control the coefficient of thermal expansion as desired and thereby
prevent wiring disconnection, hole breakout, etc. Accordingly, the
land width can also be reduced, making it possible to increase the
density of the wiring pattern.
[0085] Also, the through hole 3 is formed in the photosensitive
glass 2 having a coefficient of thermal expansion close to that of
the copper film 6, the copper film 6 is formed on the inner wall
surface of the through hole 3 and also as a wiring layer, and with
the interior of the through hole 3 filled with resin, the
insulating layer 10 is formed. This makes it possible to produce
the multilayer printed board 1 with fine wiring patterns.
[0086] In the foregoing description of the embodiment, the copper
film 6 on the inner wall surface of the through hole 3 and the
copper film 6 serving as a wiring layer are formed in an identical
step, but may be formed in separate steps.
[0087] Also, in the above embodiment, the interior of the through
hole 3 is filled with the resin 8. Instead of filling the resin,
the resin 8 may be formed so as to cover at least the copper film 6
on the inner wall surface of the through hole 3.
[0088] Further, in the above embodiment, the ion blocking layer 4
is formed. However, in cases where a glass substrate containing no
alkali metal ions is used or the glass substrate is in its entirety
crystallized for modification so that ion migration can be
suppressed, for example, the ion blocking layer 4 may be
omitted.
EXAMPLE 1
[0089] An example according to the first embodiment will be now
described.
[0090] In this example, a photosensitive glass (trade name: PEG3,
manufactured by HOYA CORPORATION) having the composition stated
below was used as the glass substrate.
1 (wt %) SiO.sub.2 78.0% Li.sub.2O 10.0% Al.sub.2O.sub.3 6.0%
K.sub.2O 4.0% Na.sub.2O 1.0% ZnO 1.0% Au 0.003% Ag 0.08% CeO.sub.2
0.08%
[0091] (Through Hole Formation Step)
[0092] 1) With a mask held in close contact with the photosensitive
glass, UV light was irradiated onto a through hole portion of the
glass through the mask, thereby forming a latent image
corresponding to the exposed portion. The mask used was made of
silica glass patterned using chromium/chromium oxide. Subsequently,
the photosensitive glass was heat-treated at 400.degree. C. to
crystallize only the exposed portion.
[0093] 2) Dilute hydrofluoric acid (10% solution) was sprayed on
both surfaces of the photosensitive glass to remove the
crystallized through hole portion by dissolution, thereby forming a
through hole with a diameter .phi. of 0.05 mm (50 .mu.m).
[0094] (Ion Blocking Layer Formation Step)
[0095] 3) The photosensitive glass having the through hole thus
formed therein was immersed in an aqueous solution containing 20
vol % sulfuric acid and was applied with a voltage of +20 V for 10
minutes. The negative electrode used in this case was made of
stainless steel.
[0096] 4) Using a sputtering system, an SiO.sub.2 film (thickness:
0.05 .mu.m) was formed on an Si.sub.3N.sub.4 film of 0.05 .mu.m
thick, thereby forming an ion blocking layer.
[0097] (Wiring Layer and Conductive Film Formation Step)
[0098] 5) Using the sputtering system, a chromium film with a
thickness of 0.05 .mu.m was formed.
[0099] 6) A chromium-copper alloy film (chromium: 4%; copper: 96%)
(thickness: 0.05 .mu.m) was formed by using the sputtering
system.
[0100] 7) Also using the sputtering system, a copper film
(thickness: 1.5 .mu.m) was formed. The film formations 5) to 7)
were all carried out continuously in an air-shutoff environment, to
prevent oxides from being produced between adjacent metal
films.
[0101] 8) Subsequently, a copper film (thickness: 0.3 .mu.m) was
formed by electroless plating and then a copper film of 5 .mu.m
thick was built up by electroplating, thus forming a conductive
film and a wiring layer at the same time as a continuous film.
[0102] (Conductive Film Coating Step)
[0103] 9) Using the sputtering system, a thin chromium film of 0.1
.mu.m thick was formed as a barrier layer on the surface of the
wiring layer.
[0104] 10) Using a screen printing plate having an opening formed
therein only at a location corresponding to the through hole
portion, a photosensitive epoxy resin (SPBR-8000, manufactured by
SANWA CHEMICAL IND. CO., LTD.) was filled into the through hole
with the use of a screen printing machine, thereby forming a
protective layer.
[0105] 11) Then, after the resin was predried at 90.degree. C. for
30 minutes by using a hot air dryer, it was further cured with UV
light energy of 1000 mj/cm.sup.2 irradiated onto both sides of the
through hole.
[0106] 12) Using a roll buffing machine, portions of the epoxy
resin protruding above or spreading around the opening edges of the
through hole were removed by polishing.
[0107] 13) Then, using the hot air dryer, the resin was completely
cured by being dried at 150.degree. C. for 60 minutes.
[0108] 14) Subsequently, only the chromium layer serving as the
barrier layer was selectively stripped off. As the stripping agent,
a chemical containing potassium ferricyanide as a main component
was used.
[0109] (Etching Step)
[0110] 15) A positive liquid resist (MICROPOSIT SJR5440,
manufactured by SHIPLEY COMPANY) was applied for a thickness of
about 10 .mu.m by using a spinner, and then using a glass mask,
exposure was carried out at 1000 mj/cm.sup.2 in a parallel light
exposure system. Subsequently, using a developing solution
(DEVELOPER 2500, from SHIPLEY COMPANY), development was performed
by a dipping method at room temperature for 1 minute, to form a
resist pattern.
[0111] 16) After the wiring layer having the resist pattern formed
thereon was sprayed with a solution of 40-Baum ferric chloride to
remove copper by etching, the resist was removed using acetone.
Then, using a copper pattern as a metal resist, the chromium layer
was etched to form a wiring pattern with a line width of 20 .mu.m,
a line spacing of 20 .mu.m and a through hole land width of 120
.mu.m.
[0112] As the etchant for removing chromium, a chemical containing
potassium ferricyanide as a main component was used.
[0113] (Insulating Layer Formation Step)
[0114] 17) Using the spinner, an interlayer insulating layer
(MULTIPOSIT 9500, from SHIPLEY COMPANY) of about 10 .mu.m thick was
formed on one surface of the double-sided glass wiring board
fabricated as described above.
[0115] 18) Then, using a glass mask, exposure was performed with
light energy of 1300 mj/cm.sup.2 radiated from the exposure system,
and the wiring board was dried at 80.degree. C. for 10 minutes in
the hot air dryer. Subsequently, development was carried out using
a special developing solution.
[0116] 19) Another interlayer insulating layer (MULTIPOSIT 9500,
from SHIPLEY COMPANY) of about 10 .mu.m thick was formed on the
other surface of the wiring board by using the spinner, and after a
via hole with a diameter .phi. of 20 .mu.m was formed by exposure
and development, the insulating layer was completely cured by
hot-air drying in a nitrogen atmosphere at 170.degree. C. for 4
hours.
[0117] The insulating layer was thus patterned on one surface at a
time, because light-transmitting glass was used as the substrate
and the exposure light could transmit through the glass substrate
and reach the opposite surface.
[0118] (Wiring Layer Formation Step)
[0119] 20) Using the sputtering system, a chromium layer of 0.05
.mu.m thick was formed in the same manner as in the step of forming
the first wiring layer described above.
[0120] 21) Subsequently, a chromium-copper alloy layer (chromium:
4%; copper: 96%) with a thickness of 0.05 .mu.m was formed using
the sputtering system.
[0121] 22) Also using the sputtering system, a copper film
(thickness: 5 .mu.m) was formed. The film formations 20) to 21)
were all carried out continuously in an air-shutoff environment to
prevent oxides from being produced between adjacent metal
films.
[0122] (Etching Step)
[0123] 23) A positive liquid resist (MICROPOSIT SJR5440, from
SHIPLEY COMPANY) was applied for a thickness of about 10 .mu.m by
using the spinner, and then using a glass mask, exposure was
carried out at 1000 mj/cm.sup.2 in the parallel light exposure
system. Subsequently, using a developing solution (DEVELOPER 2500,
from SHIPLEY COMPANY), development was performed by a dipping
method at room temperature for 1 minute, to form a resist
pattern.
[0124] 24) After the wiring layer having the resist pattern formed
thereon was sprayed with a solution of 40-Baum ferric chloride to
remove copper by etching, the resist was removed using acetone.
Finally, using a copper pattern as a metal resist, the chromium
layer was etched to form a second-layer wiring pattern with a line
width of 20 .mu.m, a line spacing of 20 .mu.m and a via land width
of 50 .mu.m.
[0125] As the etchant for removing chromium, a chemical containing
potassium ferricyanide as a main component was used.
[0126] (Surface Treatment Step)
[0127] 25) Using the spinner, an insulating layer (MULTIPOSIT 9500,
from SHIPLEY COMPANY) of about 10 .mu.m thick was formed as a cover
coat on one surface of the four-layer glass wiring board fabricated
as described above.
[0128] 26) Then, using a glass mask, exposure was performed with
light energy of 1300 mj/cm.sup.2 radiated from the exposure system,
and after the wiring board was dried at 80.degree. C. for 10
minutes in the hot air dryer, development was carried out using a
special developing solution.
[0129] 27) Another interlayer insulating layer (MULTIPOSIT 9500,
from SHIPLEY COMPANY) of about 10 .mu.m thick was formed using the
spinner on the other surface of the wiring board, and after
exposure and development were performed, the wiring board was dried
by hot-air drying in a nitrogen atmosphere at 170.degree. C. for 4
hours.
[0130] 28) As a surface treatment, the resulting wiring board was
plated with nickel/gold by electroless plating.
[0131] In the manner described above, a high-density, double-sided
multilayer printed wiring board having two layers of wiring pattern
formed on each side of the glass substrate was obtained.
[0132] A second embodiment will be now described.
[0133] The second embodiment is a modification of the first
embodiment described above, and a multilayer printed wiring board
was fabricated in the same manner as in the first embodiment,
except that alkali-free glass containing no alkali metal ions was
used as the core substrate and that the through hole formation step
was implemented by laser beam machining.
[0134] FIGS. 7 and 8 are sectional views illustrating the through
hole formation step according to this embodiment.
[0135] In this embodiment, the through hole is formed by laser beam
irradiation as mentioned above. The type of laser that can be used
is not particularly limited, and excimer laser,
yttrium-aluminum-garnet laser, carbon dioxide gas laser, argon gas
laser, etc. may be used, for example. The following show the laser
characteristics of a FEMTOSECOND LASER (CPA-2000), manufactured by
HOYA CONTINUUM CORPORATION, as an example of laser to be used:
2 Condition Energy 600 .mu.J/cm.sup.2 Frequency 1 kHz Pulse width
150 fs Average output 0.6 W Peak power 4 GW Irradiation time 1
s
[0136] When the through hole is formed using a laser, the laser
beam may be irradiated on one surface of the core substrate at a
time, or may be simultaneously irradiated on both surfaces of
same.
[0137] FIG. 7 illustrates the through hole formation step in which
the laser beam is irradiated on one surface of the substrate at a
time. In this case, first, the laser beam is irradiated onto one
surface of alkali-free glass 20 to form a through hole for origin
positioning, as shown in FIG. 7(A). Then, the laser beam is
irradiated from one side of the alkali-free glass 20 onto a through
hole-forming portion, to cut a through hole 22 halfway in the glass
20, as shown in FIG. 7(B). Subsequently, the laser beam is
irradiated from the other side of the glass to make the through
hole 22 penetrating the glass, as shown in FIG. 7(C).
[0138] FIG. 8 illustrates the through hole formation step in which
laser beams are simultaneously irradiated onto both surfaces of the
substrate. Also in this case, an origin positioning through hole is
formed, as shown in FIG. 8(A). Then, laser beams are simultaneously
irradiated onto both surfaces of the alkali-free glass, to form the
through hole 22 as shown in FIG. 8(B).
[0139] After completion of the through hole formation step, the
wiring layer and conductive film formation step, the conductive
film coating step, the etching step, the insulating layer formation
step, the wiring layer formation step, and the surface treatment
step were performed in the same manner as in the first embodiment,
to fabricate the multilayer printed board 1.
[0140] Since, in this embodiment, the alkali-free glass 20
containing no alkali metal ions is used as the core substrate, the
ion blocking layer need not be formed. In this embodiment,
therefore, it is necessary that a material having good adhesion
with the alkali-free glass 20 should be selected as the material of
the adhesion-reinforcing layer 5.
[0141] Thus, in the second embodiment, a multilayer printed wiring
board similar to that of the first embodiment could be fabricated
using the alkali-free glass 20 as the substrate material.
[0142] Alternatively, using the photosensitive glass 2 as the
substrate material, a through hole may be formed by laser beam
machining. Also in this case, a small-diameter through hole can be
formed with accuracy, and since it is possible to reduce the width
of the land surrounding the opening of such a small-diameter
through hole, the density of wiring patterns can be increased.
[0143] In this embodiment, the through hole is formed by machining
the alkali-free glass with a laser beam; however, the through hole
formation by laser beam machining is not limited to alkali-free
glass but is applicable to other types of glass including
photosensitive glass.
[0144] A third embodiment will be now described.
[0145] Using, as the substrate material, the same photosensitive
glass material (trade name: PEG3, manufactured by HOYA CORPORATION)
as used in Example 1, a multilayer wiring board was fabricated in
almost the same manner as in Example 1, except that after the
formation of the through hole, the glass was in its entirety
modified by crystallization to improve the characteristics of the
original photosensitive glass, as described in detail below.
[0146] (Through Hole Formation Step)
[0147] Following the same procedure as employed in Example 1, a
through hole 33 (diameter .phi.: 50 .mu.m) was formed (FIGS. 9(A)
& 9(B)).
[0148] (Crystallization Step)
[0149] The photosensitive glass 32 having the through hole 33 thus
formed therein was in its entirety irradiated with ultraviolet rays
for 30 seconds. Subsequently, the glass substrate was heat-treated
at a temperature higher than the yield point thereof for about 2
hours, to crystallize the entire substrate (FIG. 9(C)).
[0150] This additional step serves to enhance, for example, the ion
blocking effect, so that the ion blocking layer, which was formed
in Example 1, was unnecessary.
[0151] Further, the flexural strength of the glass substrate could
be increased to a value twice or more as large as that of the
original photosensitive glass, and also the coefficient of thermal
expansion of the glass substrate could be controlled to almost the
middle value between those of an LSI chip and a copper-clad,
glass-reinforced epoxy resin (FR4) typically used in printed wiring
boards.
[0152] (Wiring Layer and Conductive Film Formation Step)
[0153] Then, following the same procedure as employed in Example 1,
a thin chromium film of 0.05 .mu.m thick (sputtering chromium layer
35a), a thin chromium-copper alloy (chromium: 4%; copper: 96%) film
of 0.05 .mu.m thick (sputtering chromium-copper layer 35b), and a
thin copper film of 1.5 .mu.m thick (sputtering copper layer 35c)
were formed.
[0154] Like Example 1, the formations of these films were all
carried out continuously in an air-shutoff environment to prevent
oxides from being produced between adjacent metal films.
[0155] Subsequently, a thin copper film (thickness: 0.3 .mu.m) was
formed by electroless plating and then a thin copper film
(thickness: 5 .mu.m) was built up by electroplating, thus forming a
conductive film and a wiring layer at the same time as a continuous
film (copper film 36) (FIG. 9(D)).
[0156] (Conductive Film Coating Step)
[0157] Then, following the same procedure as used in Example 1, a
thin chromium film (thickness: 0.1 .mu.m) was formed as a barrier
layer on the surface of the wiring layer. Subsequently, using a
screen printing machine, a photosensitive epoxy resin (SPBR-8000,
from SANWA CHEMICAL IND. CO., LTD.) was filled into the through
hole, and after the resin was predried at 90.degree. C. for 30
minutes by using a hot air dryer, it was cured with UV light
irradiated thereon, thus coating the conductive film.
[0158] Using a roll buffing machine, portions of the epoxy resin
protruding above or spreading around the opening edges of the
through hole, as shown in FIG. 4(B), were removed by polishing.
Then, using the hot air dryer, the resin was completely cured by
being dried at 150.degree. C. for 60 minutes, thus forming a
protective layer (resin 38 ) for the conductive film (FIG.
10(A)).
[0159] Subsequently, only the thin chromium layer serving as the
barrier layer was selectively stripped off, in the same manner as
in Example 1.
[0160] (Resist Pattern Formation Step)
[0161] A positive liquid resist (MICROPOSIT SJR5440, from SHIPLEY
COMPANY) was applied for a thickness of about 10 .mu.m by using a
spinner, and then using a glass mask, exposure was carried out at
1000 mj/cm.sup.2 in a parallel light exposure system. Subsequently,
using a developing solution (DEVELOPER 2500, from SHIPLEY COMPANY),
development was performed by a dipping method at room temperature
for 1 minute, to form a resist pattern (resist 34) (FIG.
10(B)).
[0162] (Etching Step)
[0163] Following the same procedure as employed in Example 1, the
wiring layer having the resist pattern formed thereon was sprayed
with a solution of 40-Baum ferric chloride to remove copper by
etching, and the resist was removed using acetone. Then, using a
copper pattern as a metal resist, the chromium layer was etched to
form a wiring pattern with a line width of 20 .mu.m, a line spacing
of 20 .mu.m and a zero land width (FIGS. 11(A) & 13).
[0164] (Insulating Layer Formation Step)
[0165] Using the spinner, an interlayer insulating layer
(MULTIPOSIT 9500, from SHIPLEY COMPANY) of about 10 .mu.m thick was
formed on one surface of the double-sided glass wiring board
fabricated as described above. Then, using a glass mask, exposure
was performed with light energy of 1300 mj/cm.sup.2 radiated from
the exposure system, and the wiring board was dried at 80.degree.
C. for 10 minutes in the hot air dryer. Subsequently, development
was carried out using a special developing solution, to form an
insulating layer 40 (FIG. 11(A)).
[0166] In like manner, another interlayer insulating layer
(MULTIPOSIT 9500, from SHIPLEY COMPANY) of about 10 .mu.m thick was
formed on the other surface of the wiring board by using the
spinner, and after a via hole with a diameter .phi. of 20 .mu.m was
formed by exposure and development, the insulating layer was dried
by hot-air drying in a nitrogen atmosphere at 170.degree. C. for 4
hours to be completely cured.
[0167] In this case, where the crystallized glass substrate used is
opaque to the exposure light, the insulating layer patterning may
be performed simultaneously on both surfaces of the board.
[0168] (Wiring Layer Formation Step)
[0169] The process for forming the first wiring layer was repeated
again, to form a thin chromium film (thickness: 0.05 .mu.m)
(sputtering chromium layer 35a), a thin chromium-copper alloy
(chromium: 4%; copper: 96%) film of 0.05 .mu.m thick (sputtering
chromium-copper layer 35b), and a thin copper film of 5 .mu.m thick
(copper film 41) individually by sputtering (FIG. 12(A)).
[0170] (Etching Step)
[0171] A positive liquid resist (MICROPOSIT SJR5440, from SHIPLEY
COMPANY) was applied for a thickness of about 10 .mu.m by using the
spinner, and then using a glass mask, exposure was carried out at
1000 mj/cm.sup.2 in the parallel light exposure system.
Subsequently, using a developing solution (DEVELOPER 2500, from
SHIPLEY COMPANY), development was performed by a dipping method at
room temperature for 1 minute, to form a resist pattern.
[0172] After the wiring layer having the resist pattern formed
thereon was sprayed with a solution of 40-Baum ferric chloride in
the same manner as in Example 1 to remove copper by etching, the
resist was removed using acetone. Finally, using a copper pattern
as a metal resist, the chromium layer was etched to form a
second-layer wiring pattern with a line width of 20 .mu.m, a line
spacing of 20 .mu.m and a via land diameter of 50 .mu.m.
[0173] (Surface Treatment Step)
[0174] Using the spinner, an interlayer insulating layer
(MULTIPOSIT 9500, from SHIPLEY COMPANY) of about 10 .mu.m thick was
formed as a cover coat 43 on one surface of the four-layer,
double-sided wiring board fabricated as described above. Then,
using a glass mask, exposure was performed with light energy of
1300 mj/cm.sup.2 radiated from the exposure system, and after the
wiring board was dried at 80.degree. C. for 10 minutes in the hot
air dryer, development was carried out using a special developing
solution.
[0175] Another interlayer insulating layer (MULTIPOSIT 9500, from
SHIPLEY COMPANY) of about 10 .mu.m thick was formed using the
spinner on the other surface of the wiring board, and after
exposure and development were performed, the wiring board was dried
by hot-air drying in a nitrogen atmosphere at 170.degree. C. for 4
hours.
[0176] Finally, the wiring board was surface-treated by electroless
nickel/gold plating (surface treatment layer 42), thereby obtaining
a high-density, four-layer printed wiring board having two layers
of wiring pattern formed on each surface of the glass substrate
(FIG. 12(B)).
[0177] With respect to the crystallized glass substrate used in
Example 2, the effects of modification of glass characteristics
were evaluated.
[0178] First, as shown in FIG. 14, a pair of comb patterns
(regarded as lines; spacing: 40 .mu.m; a total of 125 lines) having
a metal film composition containing copper as its main component,
like the wiring layer, were arranged opposite to each other such
that teeth of the two comb patterns were alternately arranged, and
one comb pattern was connected to a positive electrode while the
other to a negative electrode, thereby forming a typical wiring
pattern for ion migration accelerated testing which had a distance
(regarded as spacing) between adjacent teeth equal to a tooth width
of 40 .mu.m.
[0179] This wiring pattern was continuously applied with a voltage
of 5 V for 500 hours in an atmosphere of 85.degree. C. and 85%.
[0180] As a result, the crystallized glass substrate used in
Example 2 showed no voltage drop or the like that was caused by
electrode short circuit or leak touch due to ion migration, and it
was confirmed that the glass substrate had excellent resistance to
ion migration.
[0181] Namely, thanks to the crystallization of the glass
substrate, alkali ions etc. contained in the surface region and
inside of the glass were made less liable to move, compared with
the original photosensitive glass. It is therefore unnecessary to
form an ion blocking layer, thus simplifying the fabrication
process for multilayer printed boards.
[0182] Also, the flexural strength of the crystallized glass
substrate was measured and found to be twice or more as large as
that of the photosensitive glass, proving excellent physical
characteristics.
[0183] Further, the dielectric constant and dielectric loss tangent
of the crystallized glass substrate were measured and found to be
smaller than those of the original photosensitive glass, proving
that the crystallized glass substrate has excellent electrical
characteristics and is more suited for use as the material of
multilayer printed boards.
[0184] In the multilayer printed wiring board according to the
third embodiment, the land width of the through holes was set to
zero and the diameter of the via hole was further reduced, so that
sufficiently large space could be secured between the through
holes, permitting wiring to be arranged between the through holes
and thereby further expanding the degree of freedom in wiring
design. Also, since the line spacing and the line width can be
further reduced, this multilayer printed wiring board is remarkably
advantageous in that it permits further increase in the density of
wiring patterns.
[0185] In the third embodiment, moreover, the diameter of the
landless through hole was set to 50 .mu.m and the diameter of the
via land of the second-layer wiring pattern was also set to an
identical value of 50 .mu.m. Thus, the condition for laying out the
wiring round the land is the same for the first and second layers,
and it can therefore be said that the degree of freedom in wiring
pattern design is expanded.
[0186] The multilayer printed boards fabricated according to the
individual embodiments were subjected to heat cycle test (1000
cycles each being an interval of 30 min. at 125.degree.
C..about.65.degree. C.). As a result, none of the multilayer
printed boards showed defects such as wiring disconnection or hole
breakout, and the connection reliability of the through holes and
via holes was not damaged at all.
[0187] The third embodiment in particular showed no defects such as
wiring disconnection or hole breakout even after the heat cycle was
repeated more than 2000 times.
[0188] As described above, in the multilayer printed wiring board
according to the present invention, a glass substrate having a
coefficient of thermal expansion close to that of a conductive film
as well as that of a silicon chip is used as the core substrate,
and accordingly, the conductive film can be made as thin as 1 to 20
.mu.m, permitting the formation of fine wiring patterns.
[0189] Also, in the multilayer printed wiring board, the conductive
film is coated with a protective layer; therefore, even if the
conductive film formed is thin, sufficiently high connection
reliability is ensured, so that the conductive film and the wiring
layer can be reduced in thickness, making it possible to form fine
wiring patterns.
[0190] Further, using glass as the core substrate, through holes
are formed by exposure or by laser beam machining, and this makes
it possible to form small-diameter through holes. Also, the land
width of small-diameter through holes can be reduced, permitting
further increase in the density of wiring patterns.
[0191] In the production process for a multilayer printed wiring
board, glass is used as the substrate material, whereby a
difference in coefficient of thermal expansion between the
substrate material and the conductive film can be reduced. Also, in
the production process, a through hole is formed in the glass
substrate, a conductive film is formed on the inner wall surface of
the through hole, and with the conductive film coated with resin,
an insulating layer and a wiring layer are formed, whereby a
multilayer printed board having fine wiring patterns can be
produced.
[0192] Further, after the through hole is formed, a step of
modifying the entire glass substrate by, for example,
crystallization may be additionally performed.
[0193] This additional step makes it possible to obtain improved
mechanical strength and heat resistance, compared with the original
glass substrate, to control the coefficient of thermal expansion
and also to suppress ion migration. Since ion migration can be
suppressed, it is unnecessary to form an ion blocking layer on the
glass substrate, thus simplifying the production process.
[0194] Also, the coefficient of thermal expansion of the
crystallized glass substrate can be made close to that of a
metallic material forming the wiring layer. Thus, even in cases
where a landless structure is employed to form narrow-pitch,
high-density wiring patterns, for example, defects such as wiring
disconnection or hole breakout, which are caused by repeated
expansion and contraction due to heat history, can be
prevented.
[0195] The foregoing is considered as illustrative only of the
principles of the present invention. Further, since numerous
modifications and changes will readily occur to those skilled in
the art, it is not desired to limit the invention to the exact
construction and applications shown and described, and accordingly,
all suitable modifications and equivalents may be regarded as
falling within the scope of the invention in the appended claims
and their equivalents.
* * * * *