U.S. patent application number 09/879556 was filed with the patent office on 2002-05-02 for metal interconnect layer of semiconductor device and method for forming a metal interconnect layer.
This patent application is currently assigned to Samsung Electronics Co., Ltd.. Invention is credited to Ahn, Jong-Hyon.
Application Number | 20020050649 09/879556 |
Document ID | / |
Family ID | 19696601 |
Filed Date | 2002-05-02 |
United States Patent
Application |
20020050649 |
Kind Code |
A1 |
Ahn, Jong-Hyon |
May 2, 2002 |
Metal interconnect layer of semiconductor device and method for
forming a metal interconnect layer
Abstract
A metal interconnect layer of a semiconductor device, and a
method for forming a metal interconnect layer of a semiconductor
device are provided. The lower portion of a metal interconnect
layer is wider than the upper portion of the metal interconnect
layer. In another interconnect structure in accordance with the
invention, the middle portion of the metal interconnect layer is
wider than the upper and lower portions of the metal interconnect
layer.
Inventors: |
Ahn, Jong-Hyon; (Suwon city,
KR) |
Correspondence
Address: |
Steven M. Mills, Esq.
MILLS & ONELLO LLP
Eleven Beacon Street, Suite 605
Boston
MA
02108
US
|
Assignee: |
Samsung Electronics Co.,
Ltd.
|
Family ID: |
19696601 |
Appl. No.: |
09/879556 |
Filed: |
June 12, 2001 |
Current U.S.
Class: |
257/773 ;
257/E21.578; 257/E23.152; 438/618; 438/666 |
Current CPC
Class: |
H01L 21/31116 20130101;
H01L 23/53266 20130101; H01L 2924/0002 20130101; H01L 21/76804
20130101; H01L 21/76844 20130101; H01L 23/53238 20130101; H01L
21/31144 20130101; H01L 21/76843 20130101; H01L 21/31138 20130101;
H01L 23/5283 20130101; H01L 2924/0002 20130101; H01L 2924/00
20130101 |
Class at
Publication: |
257/773 ;
438/618; 438/666 |
International
Class: |
H01L 021/44; H01L
023/48; H01L 023/52; H01L 029/40 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 1, 2000 |
KR |
00-64557 |
Claims
1. A metal interconnect layer for a semiconductor device,
comprising: a first upper portion having a first width; and a
second lower portion under the first upper portion, the second
lower portion having a second width wider than the first width.
2. The metal interconnect layer of claim 1, wherein the metal
interconnect layer comprises: a barrier layer deposited along an
interlevel dielectric (ILD) film with a trench having a lower width
and an upper width, the lower width being wider than the upper
width; and a conductive layer deposited over the barrier layer,
filling the trench, the conductive layer having a lower width and
an upper width, the lower width being wider than the upper
width.
3. The metal interconnect layer of claim 2, wherein the ILD film is
formed of a single insulation layer with a material layer selected
from the group consisting of undoped silicate glass (USG) layer,
silicon oxide fluoride (SiOF) layer, tetraethylorthosilicate (TEOS)
layer, spin-on glass (SOG) layer and borophosphosilicate glass
(BPSG).
4. The metal interconnect layer of claim 3, wherein the thickness
of an upper portion of the ILD film surrounding a portion of the
trench with the upper width is in the range of 20-70% of the
thickness of the entire ILD film.
5. The metal interconnect layer of claim 2, wherein the ILD film
comprises first and second insulation layers deposited in sequence,
the trench being formed in the ILD film such that the portion of
the trench formed in the first insulation layer is wider than the
portion of the trench formed in the second insulation layer.
6. The metal interconnect layer of claim 5, wherein the thickness
of the second insulation layer is in the range of 20-70% of the
thickness of the entire ILD film including the first and second
insulation layers.
7. The metal interconnect layer of claim 5, wherein the second
insulation layer is formed of layer selected from the group
consisting of a USG layer, SiOF layer, TEOS layer, SOG layer and a
BPSG layer; and the first insulation layer is formed of at least
one of a flowable oxide (FOX) layer and a hydride organic siloxane
polymer (HOSP) layer such that the first insulation layer has a
higher etch rate than the second insulation layer.
8. The metal interconnect layer of claim 2, wherein the barrier
layer is formed of one of a Ta layer, TaN layer, Ti layer, TiN
layer, and a bilayer of these material layers.
9. The metal interconnect layer of claim 2, wherein the conductive
layer is formed of one of a Cu and a W layer.
10. A metal interconnect layer for a semiconductor device,
comprising: a first upper portion having a first width; a second
middle portion having a second width; and a third lower portion
having a third width, the third width being wider than the first
and second widths.
11. The metal interconnect layer of claim 10, wherein the metal
interconnect layer comprises: a barrier layer deposited along an
interlevel dielectric (ILD) film with a trench having a lower
width, a middle width and an upper width, the middle width being
wider than the upper and lower widths; and a conductive layer
deposited over the barrier layer, filling the trench, the
conductive layer having a lower width, a middle width and an upper
width, the middle width being wider than the upper and lower
widths.
12. The metal interconnect layer of claim 11, wherein the ILD film
is formed as a single layer with a material layer selected from the
group consisting of undoped silicate glass (USG) layer, silicon
oxide fluoride (SiOF) layer, tetraethylorthosilicate (TEOS) layer,
spin-on glass (SOG) layer and borophosphosilicate glass (BPSG)
layer.
13. The metal interconnect layer of claim 12, wherein the thickness
of a middle portion of the ILD film surrounding a portion of the
trench with the wider middle width is in the range of 20-50% of the
thickness of the entire ILD film.
14. The metal interconnect layer of claim 11, wherein the ILD film
comprises first, second and third insulation layers deposited in
sequence, the trench being formed in the ILD film such that the
portion of the trench formed in the second insulation layer is
wider than the portions formed in the first and third insulation
layers.
15. The metal interconnect layer of claim 14, wherein the thickness
of the second insulation layer is in the range of 20-50% of the
thickness of the entire ILD film including the first, second and
third insulation layers.
16. The metal interconnect layer of claim 14, wherein each of the
first and third insulation layers is formed of at least one of a
USG layer, SiOF layer, TEOS layer, SOG layer and a BPSG layer; and
the second insulation layer is formed of at least one of a flowable
oxide (FOX) layer and a hydride organic siloxane polymer (HOSP)
layer having a higher etch rate than the first and third insulation
layers.
17. The metal interconnect layer of claim 11, wherein the barrier
layer is formed of at least one of a Ta layer, TaN layer, Ti layer,
TiN layer, and a bilayer of these material layers.
18. The metal interconnect layer of claim 11, wherein the
conductive layer is formed of at least one of a Cu and a W
layer.
19. A method for forming a metal interconnect layer of a
semiconductor device, the method comprising: forming an interlevel
dielectric (ILD) film over a semiconductor wafer; forming a
photoresist pattern on the ILD film, the photoresist pattern
defining a metal interconnect region; etching a portion of the ILD
film using the photoresist pattern as an etch mask to form an
initial trench, a polymer layer serving as an etch barrier on the
sidewalls of the initial trench; etching the remainder of the ILD
film using the photoresist pattern and the polymer layer on the
initial trench sidewalls as an etch mask, to deepen the trench, the
resulting deeper trench having a lower width and an upper width,
the lower width being wider than the upper width; removing the
photoresist pattern; forming a barrier layer on the semiconductor
wafer and in the deeper trench; depositing a conductive layer over
the barrier layer; and polishing the conductive layer by chemical
mechanical polishing (CMP), such that the conductive layer remains
within only the deeper trench.
20. The method of claim 19, wherein, in etching a portion of the
ILD film to form the initial trench, a hydrogen containing CF-based
gas and an inert gas are used such that the polymer layer is formed
on the initial trench sidewalls.
21. The method of claim 19, wherein, in etching the remainder of
the ILD film to deepen the trench, a non-hydrogen containing
CF-based gas and an inert gas are used together with at least one
of oxygen and nitrogen.
22. The method of claim 19, wherein the height of the initial
trench with the polymer layer is in the range of 20-70% of the
thickness of the entire ILD film.
23. The method of claim 19, wherein the ILD film is formed of at
least one of a undoped silicate glass (USG) layer, silicon oxide
fluoride (SiOF) layer, tetraethylorthosilicate (TEOS) layer,
spin-on glass (SOG) layer and a borophosphosilicate glass
(BPSG).
24. The method of claim 19, wherein the barrier layer is formed of
at least one of a Ta layer, TaN layer, Ti layer, TiN layer and a
bilayer of these layers, acting as both a metal-diffusion barrier
and an adhesive layer between the ILD film and the conductive
layer.
25. The method of claim 19, wherein the conductive layer is formed
of at least one of a Cu and a W layer.
26. A method for forming a metal interconnect layer of a
semiconductor device, the method comprising: forming a first
interlevel dielectric (ILD) film over a semiconductor wafer;
forming a second ILD film over the first ILD film, the second ILD
film having a lower etch rate than the first ILD film; forming a
photoresist pattern over the second ILD film, the photoresist
pattern defining a metal interconnect region; etching the second
ILD film and the first ILD film in sequence using the photoresist
pattern as an etch mask, to form a trench having a lower width in
the first ILD film and an upper width in the second ILD film, the
lower width being wider than the upper width; removing the
photoresist pattern; forming a barrier layer along the
semiconductor wafer and in the trench; depositing a conductive
layer over the barrier layer; and polishing the semiconductor wafer
with the conductive layer by chemical mechanical polishing such
that the conductive layer remains within only the trench surrounded
by the first and second ILD films.
27. The method of claim 26, wherein the thickness of the second ILD
film is in the range of 20-70% of the sum of the thicknesses of the
first and second ILD films.
28. The method of claim 26, wherein the second ILD film is formed
of at least one of a undoped silicate glass (USG) layer, silicon
oxide fluoride (SiOF) layer, a tetraethylorthosilicate (TEOS)
layer, spin-on glass (SOG) layer and a borophosphosilicate glass
(BPSG); and the first ILD film is formed of at least one of a
flowable oxide (FOX) layer and a hydride organic siloxane polymer
(HOSP) layer, such that the first ILD film has a higher etch rate
than the second ILD film.
29. The method of claim 26, wherein the barrier layer is formed of
at least one of a Ta layer, TaN layer, Ti layer, TiN layer and a
bilayer of these layers, acting as both a metal-diffusion barrier
and an adhesive layer between the ILD film and the conductive
layer.
30. The method of claim 26, wherein the conductive layer is formed
of at least one of a Cu and a W layer.
31. A method for forming a metal interconnect layer of a
semiconductor device, the method comprising the steps of: (a)
forming an interlevel dielectric (ILD) film over a semiconductor
wafer; (b) forming a photoresist pattern on the ILD film, the
photoresist pattern defining a metal interconnect region; (c)
etching an upper portion of the ILD film using the photoresist
pattern as an etch mask to form an initial trench having a first
width, resulting in a polymer layer serving as an etch barrier on
the sidewalls of the initial trench; (d) etching an middle portion
of the ILD film using the photoresist pattern and the polymer layer
on the initial trench sidewalls as an etch mask, to deepen the
trench to form a second portion of the trench, the second portion
of the trench having a second width wider than first width of the
initial trench; (e) forming a polymer layer serving as an etch
barrier on the lower end of the etched middle portion of the ILD
film; (f) etching the remaining lower portion of the ILD film using
the photoresist pattern and the polymer layers on the initial
trench sidewalls and the sidewalls of the second portion of the
trench as an etch mask, to further deepen the trench to form a
third portion of the trench having a third width, the third width
being smaller than the second width of the second portion of the
trench; (g) removing the photoresist pattern; (h) forming a barrier
layer along the semiconductor wafer and in the deepened trench; (i)
depositing a conductive layer over the barrier layer; and (j)
polishing the semiconductor wafer with the conductive layer by
chemical and mechanical polishing such that the conductive layer
remains within only the deepened trench surrounded by the ILD
film.
32. The method of claim 31, wherein, in steps (c) and (e), a
hydrogen containing CF-based gas and an inert gas are used to cause
the polymer layer on the initial trench sidewalls and the lower end
of the second portion of the trench.
33. The method of claim 31, wherein, in steps (d) and (f), a
non-hydrogen containing CF-based gas and an inert gas are used
together with at least one of oxygen and nitrogen.
34. The method of claim 31, wherein the thickness of the middle
portion of the ILD film is in the range of 20-50% of the thickness
of the entire ILD film.
35. The method of claim 31, wherein the ILD film is formed of at
least one of a undoped silicate glass (USG) layer, silicon oxide
fluoride (SiOF) layer, tetraethylorthosilicate (TEOS) layer,
spin-on glass (SOG) layer and a borophosphosilicate glass
(BPSG).
36. The method of claim 31, wherein the barrier layer is formed of
at least one of a Ta layer, TaN layer, Ti layer, TiN layer and a
bilayer of these layers, acting as both a metal-diffusion barrier
and an adhesive layer between the ILD film and the conductive
layer.
37. The method of claim 31, wherein the conductive layer is formed
of at least one of a Cu and a W layer.
38. A method for forming a metal interconnect layer of a
semiconductor device, the method comprising: forming a first
interlevel dielectric (ILD) film over a semiconductor wafer;
forming a second ILD film over the first ILD film, the second ILD
film having a higher etch rate than the first ILD film; forming a
third ILD film over the second ILD film, the third ILD film having
a lower etch rate than the second ILD film; forming a photoresist
pattern over the third ILD film, the photoresist pattern defining a
metal interconnect region; etching the third ILD film, the second
ILD film, and the first ILD film in sequence using the photoresist
pattern as an etch mask, to form a trench having a lower width, a
middle width and an upper width, the middle width in the second ILD
film being wider than the upper width in the third ILD film and the
lower width in the first ILD film; removing the photoresist
pattern; forming a barrier layer along the semiconductor wafer and
in the trench; depositing a conductive layer over the barrier
layer; and polishing the semiconductor wafer with the conductive
layer by chemical mechanical polishing such that the conductive
layer remains within only the trench surrounded by the first,
second and third ILD films.
39. The method of claim 38, wherein the thickness of the second ILD
film is in the range of 20-50% of the sum of the thicknesses of the
first, second and third ILD films.
40. The method of claim 38, wherein each of the first and third ILD
films is formed of at least one of an undoped silicate glass (USG)
layer, silicon oxide fluoride (SiOF) layer, tetraethylorthosilicate
(TEOS) layer, spin-on glass (SOG) layer and a borophosphosilicate
glass (BPSG); and the second ILD film is formed of at least one of
a flowable oxide (FOX) layer and a hydride organic siloxane polymer
(HOSP) layer such that the second ILD film has a higher etch rate
than the first and third ILD films.
41. The method of claim 38, wherein the barrier layer is formed of
at least one of a Ta layer, TaN layer, Ti layer, TiN layer and a
bilayer of these layers, acting as both a metal-diffusion barrier
and an adhesive layer between the first, second and third ILD
films, and the conductive layer.
42. The method of claim 38, wherein the conductive layer is formed
of at least one of a Cu and a W layer.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device and
a method for manufacturing the same, and more particularly, to a
metal interconnect layer of a semiconductor device and a method for
forming the metal interconnect layer.
[0003] 2. Description of the Related Art
[0004] For higher integration density and rapid operation of
integrated circuit chips, semiconductor integration techniques have
been advanced. The size of chips has been decreased with a smaller
design rule to satisfy the need for high integration level. To
increase the operation speed of chips, performance of transistors
has been enhanced by reducing the parasitic resistance and
parasitic capacitance of the transistors.
[0005] With regard to interconnection techniques for semiconductor
devices, it is significant to design a high-performance transistor
with a minimum resistance and parasitic capacitance, such that an
RC level (resistance x capacitance) of a semiconductor device
having the capacitor is low. The resistivity of copper (Cu), 1.8
.mu..OMEGA.-cm, is lower than that of aluminum (Al), 2.7
.mu..OMEGA.-cm. Due to the low resistance of Cu, there is a
thickness reduction effect when a metal interconnect layer is made
of Cu. For this reason, use of Cu as a material for metal
interconnect has proliferated to reduce interconnection resistance
and parasitic capacitance with a 0.18 .mu.m or less design
rule.
[0006] FIGS. 1 and 2 illustrate the configuration of metal
interconnects formed by a conventional damascene process. For the
metal interconnects shown in FIGS. 1 and 2, the conductive layers
are formed of Cu. In particular, a trench is formed in an
interlevel dielectric (ILD) film, and a barrier layer 16 and a
conductive layer 18 are deposited in sequence, filling the trench.
Then, the semiconductor wafer 10 is subjected to chemical
mechanical polishing. Such processes are collectively called
"damascene processes." When a metal interconnect is formed by the
conventional damascene process, a lifting of the conductive layer
18 in the trench may occur due to stress applied to the ILD film 12
during a subsequent thermal process. This problem is serious when
the upper width of a trench is larger than the lower width, as
shown in FIG. 2. When such lifting of a metal connection occurs in
a trench, the contact between a via and the metal interconnect is
unsatisfactory, so that normal operation of semiconductor chips is
impossible.
[0007] FIG. 3 illustrates lifting of a metal interconnect in a
trench. As the trench angle (.theta.) in the ILD film becomes
smaller, it is more likely that lifting of the conductive layer 18
will occur.
SUMMARY OF THE INVENTION
[0008] To solve the above problems, it is an object of the present
invention to provide a metal interconnect layer of a semiconductor
device that essentially does not lift from a trench.
[0009] It is another object of the present invention to provide a
method for forming a metal interconnect layer of a semiconductor
device, which can prevent lifting of the metal interconnect layer
from a trench.
[0010] According to an aspect of the present invention, there is
provided a metal interconnect layer of a semiconductor device. The
interconnect layer includes a first upper portion having a first
width and a second lower portion under the first upper portion. The
lower portion has a second width which is larger than the first
width of the upper portion of the interconnect.
[0011] The metal interconnect layer can include a barrier layer
deposited along an interlevel dielectric (ILD) film with a trench
having a lower width and an upper width, the lower width being
larger or wider than the upper width. The interconnect layer can
also include a conductive layer deposited over the barrier layer
filling the trench, the conductive layer having a lower width and
an upper width, the lower width being wider or larger than the
upper width.
[0012] In one embodiment, the ILD film may be formed of a single
insulation layer of a material selected from the group consisting
of undoped silicate glass (USG) layer, silicon oxide fluoride
(SiOF) layer, tetraethylorthosilicate (TEOS) layer, spin-on glass
(SOG) layer and borophosphosilicate glass (BPSG). The thickness of
an upper portion of the ILD film surrounding a portion of the
trench with the upper width may be in the range of 20-70% of the
thickness of the entire ILD film.
[0013] In another embodiment, the ILD film comprises first and
second insulation layers deposited in sequence, the trench being
formed in the ILD film such that the portion of the trench formed
in the first insulation layer is wider than the portion of the
trench formed in the second insulation layer. The thickness of the
second insulation layer may be in the range of 20-70% of the
thickness of the entire ILD film including the first and second
insulation layers. The second insulation layer may be formed of a
USG layer, SiOF layer, TEOS layer, SOG layer or BPSG layer, and the
first insulation layer can be formed of a flowable oxide (FOX)
layer or hydride organic siloxane polymer (HOSP) layer having a
higher etch rate than the second insulation layer.
[0014] The barrier layer can be formed of a Ta layer, a TaN layer,
a Ti layer, a TiN layer or a bilayer of these layers. The
conductive layer can be formed of a Cu or a W layer.
[0015] In another aspect, the present invention provides a metal
interconnect layer for a semiconductor device, which includes a
first upper portion having a first width, a second middle portion
having a second width and a third lower portion having a third
width. The third width is wider or larger than the first and second
widths.
[0016] In one embodiment, the metal interconnect layer comprises a
barrier layer deposited along an ILD film with a trench having a
lower width, a middle width and an upper width. The middle width is
wider or larger than the upper and lower widths. The metal
interconnect layer also includes a conductive layer deposited over
the barrier layer filling the trench. The conductive layer has a
lower width, a middle width and an upper width, the middle width
being wider or larger than the upper and lower widths.
[0017] The ILD film may be formed as a single layer with a material
selected from the group consisting of USG layer, SiOF layer, TEOS
layer, SOG layer and BPSG layer. The thickness of a middle portion
of the ILD film surrounding a portion of the trench with the larger
middle width may be in the range of 20-50% of the thickness of the
entire ILD film.
[0018] In another embodiment, the ILD film comprises first, second
and third insulation layers deposited in sequence, the trench being
formed in the ILD film such that the portion of the trench formed
in the second insulation layer is wider than the portions formed in
the first and third insulation layers. The thickness of the second
insulation layer may be in the range of 20-50% of the thickness of
the entire ILD film including the first, second and third
insulation layers. Each of the first and third insulation layers
may be formed of a USG layer, SiOF layer, TEOS layer, SOG layer or
BPSG layer, and the second insulation layer can be formed of a FOX
layer or HOSP layer having a higher etch rate than the first and
third insulation layers.
[0019] According to another aspect of the present invention, there
is provided a method for forming a metal interconnect layer of a
semiconductor device. In accordance with the method, an ILD film is
formed over a semiconductor wafer. A photoresist pattern, defining
a metal interconnect region is formed on the ILD film. A portion of
the ILD film is etched using the photoresist pattern as an etch
mask to form an initial relatively shallow trench, resulting in a
polymer layer serving as an etch barrier being formed on the
sidewalls of the shallow trench. Then, the remainder of the ILD
film is etched using the photoresist pattern and the polymer layer
on the shallow trench sidewalls as an etch mask, thereby resulting
in a deeper trench whose lower width is larger than the upper
width. Then, the photoresist pattern is removed. A barrier layer is
formed along the semiconductor wafer and in the trench, and then a
conductive layer is deposited over the barrier layer. The
conductive layer is then polished by chemical mechanical polishing
(CMP), such that the conductive layer remains within only the
trench.
[0020] In one embodiment, in etching a portion of the ILD film to
form the initial relatively shallow trench, a hydrogen containing
CF-based gas and an inert gas are used such that the polymer layer
is formed on the initial trench sidewalls. In etching the remainder
of the ILD film to deepen the trench, a non-hydrogen containing
CF-based gas and an inert gas are used together with at oxygen
and/or nitrogen.
[0021] The height of the initial trench with the polymer layer can
be in the range of 20-70% of the thickness of the entire ILD
film.
[0022] The ILD film can be formed of USG, SiOF, TEOS, SOG or BPSG.
The barrier layer can be formed of a Ta layer, a TaN layer, a Ti
layer, a TiN layer and/or a bilayer of these layers. The barrier
layer acts as both a metal diffusion barrier and an adhesive layer
between the ILD film and the conductive layer. The conductive layer
can be formed of Cu and/or W.
[0023] In another aspect, there is provided in accordance with the
invention another method for forming a metal interconnect layer of
a semiconductor device. A first ILD film is formed over a
semiconductor wafer. A second ILD film having a lower etch rate
than the first ILD film is formed over the first ILD film. Then, a
photoresist pattern, by which a metal interconnect region is
defined, is formed over the second ILD film. The second ILD film
and the first ILD film are etched in sequence using the photoresist
pattern as an etch mask, to form a trench whose lower width in the
first ILD film is larger than its upper width in the second ILD
film. After removing the photoresist pattern, a barrier layer is
formed along the semiconductor wafer and in the trench, and a
conductive layer is deposited over the barrier layer. Then, the
semiconductor wafer with the conductive layer is polished by
chemical mechanical polishing such that the conductive layer
remains within only the trench surrounded by the first and second
ILD films.
[0024] In another aspect, there is provided in accordance with the
invention another method for forming a metal interconnect layer of
a semiconductor device. An ILD film is formed over a semiconductor
wafer. A photoresist pattern, by which a metal interconnect region
is defined, is formed on the ILD film. An upper portion of the ILD
film is etched using the photoresist pattern as an etch mask to
form an initial trench having a first width, resulting in a polymer
layer serving as an etch barrier on the sidewalls of the initial
trench. A middle portion of the ILD film is etched using the
photoresist pattern and the polymer layer on the initial trench
sidewalls as an etch mask, to deepen the trench to form a second
portion of the trench whose width is larger than the width of the
initial trench. Then, a polymer layer serving as an etch barrier is
formed on the lower end of the etched middle portion of the ILD
film. The remaining lower portion of the ILD film is etched using
the photoresist pattern and the polymer layers on the initial
trench sidewalls and the sidewalls of the second portion of the
trench as an etch mask, to further deepen the trench to form a
third portion of the trench having a third width, the third width
being smaller than the second width of the second portion of the
trench. After removing the photoresist pattern, a barrier layer is
formed along the semiconductor wafer and in the deepened trench,
and a conductive layer is deposited over the barrier layer. The
semiconductor wafer with the conductive layer is then polished by
chemical and mechanical polishing such that the conductive layer
remains within only the trench surrounded by the ILD film.
[0025] In still another aspect, there is provided in accordance
with the invention another method for forming a metal interconnect
layer of a semiconductor device. A first interlevel dielectric
(ILD) film is formed over a semiconductor wafer. A second ILD film
having a higher etch rate than the first ILD film is formed over
the first ILD film, and a third ILD film having a lower etch rate
than the second ILD film is formed over the second ILD film. A
photoresist pattern, by which a metal interconnect region is
defined, is formed over the third ILD film. Following this, the
third ILD film, the second ILD film, and the first ILD film are
etched in sequence using the photoresist pattern as an etch mask,
to form a trench whose middle width in the second ILD film is
larger than the upper width in the third ILD film and the lower
width in the first ILD film. After removing the photoresist
pattern, a barrier layer is formed along the semiconductor wafer
and in the trench. Then, a conductive layer is deposited over the
barrier layer; and the semiconductor wafer with the conductive
layer is polished by chemical mechanical polishing such that the
conductive layer remains within only the trench surrounded by the
first, second and third ILD films.
BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The foregoing and other objects, features and advantages of
the invention will be apparent from the following more particular
description of preferred embodiments of the invention, as
illustrated in the accompanying drawings in which like reference
characters refer to the same parts throughout the different views.
The drawings are not necessarily to scale, emphasis instead being
placed upon illustrating the principles of the invention.
[0027] FIGS. 1 and 2 are sectional views of metal interconnects
formed by a conventional damascene process.
[0028] FIG. 3 is a perspective view of a conventional metal
interconnect in which lifting of a metal interconnect layer occurs
in a trench.
[0029] FIGS. 4 through 7 are schematic sectional views illustrating
alternative embodiments of a metal interconnect layer of a
semiconductor device according to the present invention.
[0030] FIGS. 8A through 8D are schematic sectional views
illustrating successive steps of the formation of a metal
interconnect layer of a semiconductor device according to an
embodiment of the present invention.
[0031] FIGS. 9A through 9D are schematic sectional views
illustrating a method for forming a metal interconnect layer of a
semiconductor device according to another embodiment of the present
invention.
[0032] FIGS. 10A through 10D are schematic sectional views
illustrating a method for forming a metal interconnect layer of a
semiconductor device according to still another embodiment of the
present invention.
[0033] FIGS. 11A through 11D are sectional views illustrating a
method for forming a metal interconnect layer of a semiconductor
device according to yet still another preferred embodiment of the
present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION
[0034] The present invention will now be described more fully with
reference to the accompanying drawings, in which preferred
embodiments of the invention are shown. This invention may,
however, be embodied in many different forms and should not be
construed as being limited to the embodiments set forth herein. In
the drawings, the thickness of layers and regions are exaggerated
for clarity. It will also be understood that when a layer is
referred to as being "on" another layer or substrate, it can be
directly on the other layer or substrate, or intervening layers may
also be present.
[0035] In the preferred embodiments described below, the upper
width of a metal interconnect layer is larger than the lower width
of the metal interconnect layer, or the middle width of the metal
interconnect layer is larger than the upper and lower width of the
metal interconnect layer. As a result, the problem of lifting of a
metal interconnect layer formed by a conventional damascene process
can be solved.
[0036] Preferred embodiments of a metal interconnect layer of a
semiconductor device according to the present invention will be
described with reference to FIGS. 4 through 7.
[0037] Embodiment 1
[0038] One embodiment of a metal interconnect layer of a
semiconductor device according to the present invention is shown in
FIG. 4. Referring to FIG. 4, in the metal connection configuration,
a trench whose lower width T.sub.2 is larger than the upper width
T.sub.1 is formed in an interlevel dielectric (ILD) film 102b
deposited over a semiconductor wafer 100, and a barrier layer 108a
is formed along the trench. A conductive layer 110a is deposited to
fill the trench with the barrier layer 108a. As a result, the lower
width of the resulting conductive layer 110a is larger than the
upper width thereof. It is preferable that the thickness of the
upper portion of the ILD film 102b with the relatively narrow
conductive layer is about 20-70% of the thickness of the entire ILD
film 102b. The ILD film 102b may be formed of a single insulation
layer, such as an undoped silicate glass (USG) layer, silicon oxide
fluoride (SiOF) layer, tetraethylorthosilicate (TEOS) layer,
spin-on glass (SOG) layer or borophosphosilicate glass (BPSG)
layer. The semiconductor wafer 100 may be a substrate as a stack of
an insulation layer, such as USG layer, SiOF layer, TEOS layer, SOG
layer or BPSG layer, and a silicon nitride layer formed in sequence
over a predetermined underlying layer. The barrier layer 108a may
be a Ta layer, TaN layer, Ti layer, TiN layer or a bilayer of these
material layers. The conductive layer 110a may be formed of copper
(Cu) or tungsten (W).
[0039] Embodiment 2
[0040] Another embodiment of a metal interconnect layer of a
semiconductor device according to the present invention is shown in
FIG. 5. Referring to FIG. 5, a trench whose lower width T.sub.4 is
larger than the upper width T.sub.3 is formed in an interlevel
dielectric (ILD) film 203 deposited over a semiconductor wafer 200,
and a barrier layer 206a is formed along the semiconductor wafer
200 with the trench. A conductive layer 208a is deposited to fill
the trench with the barrier layer 206a. As a result, the lower
width of the resulting conductive layer 208 is larger than the
upper width thereof. The ILD film 203 includes a first insulation
layer 201a and a second insulation layer 202a, which are stacked in
sequence. The relatively wide lower portion of the conductive layer
208 is located in the first insulation layer 201a, and the
relatively narrow upper portion of the conductive layer 208a is
located in the second insulation layer 202a. It is preferable that
the thickness of the second insulation layer 202a is about 20-70%
of the thickness of the entire ILD film 203. The first insulation
layer 201a may be formed of a material layer such as a flowable
oxide (FOX) layer or hydride organic siloxane polymer (HOSP) layer,
having a higher etch rate and a smaller dielectric constant,
compared with the second insulation layer 202a. The second
insulation layer 202a may be formed of a material layer, such as a
USG layer, SiOF layer, TEOS layer, SOG layer or BPSG layer, having
a lower etch rate than the first insulation layer 201a. In the
present embodiment, the semiconductor wafer 200, the barrier layer
206a and the conductive layer 208a are formed of the same materials
as used in Embodiment 1 described previously.
[0041] Embodiment 3
[0042] Still another embodiment of a metal interconnect layer of a
semiconductor device according to the present invention is shown in
FIG. 6. Referring to FIG. 6, a trench whose middle width T.sub.6 is
larger than the upper and lower widths T.sub.5 and T.sub.7 is
formed in an interlevel dielectric (ILD) film 302b deposited over a
semiconductor wafer 300, and a barrier layer 308a is formed along
the semiconductor wafer 300 with the trench. A conductive layer
310a is deposited to fill the trench with the barrier layer 308a.
As a result, the middle width of the resulting conductive layer
310a is larger than the upper and lower widths thereof. It is
preferable that the thickness of the middle portion of the ILD film
302b with the widest middle portion of the conductive layer 310a be
about 20-70% of the thickness of the entire ILD film 302b. The ILD
film 302b may be formed of a single insulation layer such as a USG
layer, SiOF layer, TEOS layer, SOG layer or BPSG layer. The
semiconductor wafer 300 may be a substrate in which a silicon
nitride layer is deposited over a predetermined lower layer such as
a USG layer, SiOF layer, TEOS layer, SOG layer or BPSG layer. The
barrier layer 308a may be a Ta layer, TaN layer, Ti layer, TiN
layer or a bilayer of these material layers. The conductive layer
310a may be formed of copper (Cu) or tungsten (W).
[0043] Embodiment 4
[0044] Another embodiment of a metal interconnect layer of a
semiconductor device according to the present invention is shown in
FIG. 7. Referring to FIG. 7, a trench whose middle width T.sub.9 is
larger than the upper and lower widths T.sub.8 and T.sub.10 is
formed in an interlevel dielectric (ILD) film 403' deposited over a
semiconductor wafer 400, and a barrier layer 406a is formed along
the semiconductor wafer 400 with the trench. A conductive layer
408a is deposited to fill the trench with the barrier layer 406a.
As a result, the middle width of the resulting conductive layer
408a is larger than the upper and lower widths thereof. The ILD
film 403' includes a first insulation layer 401a, a second
insulation layer 402a and a third insulation layer 403a, which are
stacked in sequence. The widest middle portion of the conductive
layer 408a is located in the second insulation layer 402a, and the
relatively narrow lower and upper portions are located in the third
and first insulation layers 403a and 401a, respectively. It is
preferable that the thickness of the second insulation layer 402a
be about 20-50% of the thickness of the entire ILD film 403'. The
first and third insulation layers 401a and 403a are formed of a
material layer, such as a USG layer, SiOF layer, TEOS layer, SOG
layer or BPSG layer, having a lower etch rate than the second
insulation layer 402a. The second insulation layer 402a is formed
of a material layer such as a flowable oxide (FOX) layer or hydride
organic siloxane polymer (HOSP) layer, having a higher etch rate
and a smaller dielectric constant, compared with the first and
third insulation layers 401a and 403a. In the present embodiment,
the semiconductor wafer 400, the barrier layer 406a and the
conductive layer 408a are formed of the same materials as used in
Embodiment 3 described previously.
[0045] A method for forming a metal interconnect layer of a
semiconductor device according to the present invention will be
described by means of the following embodiments.
[0046] Method Embodiment 1
[0047] An embodiment of the metal interconnect formation according
to the present invention is illustrated in FIGS. 8A through 8D.
Referring to FIG. 8A, an ILD film 102 is formed over a
semiconductor wafer 100. It is preferable that the ILD film 102 be
formed of a USG layer, SiOF layer, TEOS layer, SOG layer or BPSG
layer. The semiconductor wafer 100 may be a substrate as a stack of
an insulation layer, such as a USG layer, SiOF layer, TEOS layer,
SOG layer or BPSG layer, and a silicon nitride layer deposited in
sequence over a predetermined underlying layer.
[0048] Referring to FIG. 8B, a photoresist pattern 104 is formed on
the ILD film 102 by a photolighography process. A portion of the
ILD film 102 is etched using the photoresist pattern 104 as an
etching mask to form a shallow trench 106. A polymer layer 105
acting as an etch barrier is spontaneously formed on the sidewalls
of the shallow trench 106. It is preferable that the height of the
shallow trench 106 be about 20-70% of the thickness of the ILD film
102. For a general etching process, a CF-based gas such as
CHF.sub.3, CF.sub.4, C.sub.4F.sub.8 or C.sub.3F.sub.8, and an inert
gas such as Ar, He or Ne is used. Non-hydrogen containing CF-based
gases suppress deposition of a polymer layer on the trench
sidewalls, whereas hydrogen containing CF-based gases, such as
CHF.sub.3 gas, facilitates the deposition of the polymer layer. For
this reason, in the present embodiment, the etching process is
carried out using a hydrogen containing CF-based gas so that the
polymer layer 105 is formed on the trench sidewalls. The polymer
layer 105 serves as an etch barrier during a subsequent etching
process, thereby preventing lateral etching.
[0049] Referring to FIG. 8C, the ILD film 102a with the shallow
trench 106 is further etched using the photoresist pattern 104 and
the polymer layer 105 on the shallow trench sidewalls, as an
etching mask, thereby resulting in a trench 107 whose lower width
T.sub.2 is larger than the upper width T.sub.1. The lower portion
of the ILD film 102a is etched with application of a lower bias
voltage, compared with the etching of the upper portion for the
shallow trench 106. During the etching to the lower portion of the
ILD film 102a, irregular reflection of etchant species occurs on
the exposed surface of the semiconductor wafer 100, causing the
lower portion of the ILD film 102a to be etched in the lateral
direction. As a result, the trench 107 whose lower width T.sub.2 is
larger than the upper width T.sub.1 is formed.
[0050] The polymer layer 105 formed on the sidewalls of the shallow
trench 106 acts as an etch barrier so that etching to only the
lower portion of the ILD film 102a is allowed without causing
lateral etching of the upper portion of the ILD film 102a. For the
etching to the lower portion of the ILD film 102a, the
above-mentioned non-hydrogen containing CF-based gases and inert
gases are used, thereby preventing polymer deposition. Oxygen
(O.sub.2) and nitrogen (N.sub.2) can prevent deposition of polymer:
O.sub.2 is more effective than N.sub.2, for example, the effect of
preventing the deposition of polymer by O.sub.2 at 1 sccm is
equivalent to the effect by N.sub.2 at 15 sccm. For this reason, a
gas mixture of O.sub.2 or N.sub.2, the CF-based gas, and inert gas
is used in etching the lower portion of the ILD film 102a. The
amount of O.sub.2 is controlled in the range of 50-75% by weight of
the CF-based gas, such that no polymer layer is deposited on the
shallow trench sidewalls. O.sub.2 produces CO or CO.sub.2 by
reaction with polymer, and N.sub.2 produces cyanide (CN) gas by
reaction with polymer, thereby preventing deposition of polymer. As
a result, a trench 107 whose lower width T.sub.2 is larger than the
upper width T.sub.1 is formed.
[0051] Referring to FIG. 8D, the photoresist pattern 104 used in
etching the ILD film 102 is removed by a known method, for example,
by ashing. Then, a barrier layer 108 is deposited along the
semiconductor wafer 100 and within the trench 107. The barrier
layer 108 may be formed of a material layer capable of acting as
both a metal-diffusion barrier and an adhesive layer between the
ILD film 102b and a conductive layer, for example, of a Ta layer,
TaN layer, Ti layer, TiN layer or a bilayer of these material
layers. Then, a conductive layer 110 is deposited over the
semiconductor wafer 100 with the barrier layer 108. It is
preferable that the conductive layer 110 be formed of Cu or W by
electroplating, chemical vapor deposition (CVD) or sputtering, or
by a combination of these methods. For example, a portion of the
conductive layer 110 can be deposited over the barrier layer 108 by
sputtering, and then the other portion can be deposited by
electroplating.
[0052] The semiconductor wafer 100 with the conductive layer 108 is
polished by chemical mechanical polishing (CMP) such that the
conductive layer 108 remains within only the trench 107 surrounded
by the ILD film 102b, thereby resulting in a metal connection, as
shown in FIG. 4.
[0053] Method Embodiment 2
[0054] Another embodiment of the metal interconnect formation
according to the present invention is illustrated by steps in FIGS.
9A through 9D. Referring to FIG. 9A, a first ILD film 201 and a
second ILD film 202 are deposited over a semiconductor wafer 200 in
sequence. It is preferable that the first ILD film 201 is formed of
a material such as a FOX layer or HOSP layer, having a higher etch
ratio and smaller resistance constant than those of the material
for the second ILD film 202. The second ILD film 202 may be formed
of a USG layer, SiOF layer, TEOS layer, SOG layer or BPSG layer.
The thickness of the second ILD film 202 may be in the range of
about 20-70% of the sum of the thicknesses of the first and second
ILD films 201 and 202. The material used for the first ILD film
201, such as FOX layer or HOSP layer, has a smaller dielectric
constant than the USG layer or SOG layer used as the second ILD
film 201, thereby lowering parasitic capacitance of the resulting
semiconductor device. The semiconductor wafer 200 may be a
substrate in which an insulation layer such as USG layer, SiOF
layer, TEOS layer, SOG layer or BPSG layer, and a silicon nitride
layer are deposited in sequence over a predetermined underlying
layer.
[0055] Referring to FIG. 9B, a photoresist pattern 204 which
defines a metal interconnect region is formed on the second ILD
film 202 by a photolithography process. Referring to FIG. 9C, the
second and first ILD films 202 and 201 are etched in sequence using
the photoresist pattern 204 as an etch mask, thereby resulting in a
trench whose lower width T.sub.4 in the first ILD film 201a is
larger than the upper width T.sub.3 in the second ILD film 202a.
This is because the first ILD film 201 has a higher etch rate than
the second ILD film 202.
[0056] Referring to FIG. 9D, the photoresist pattern 204 is removed
by a known method, for example, by ashing, and a barrier layer 206
is deposited along the semiconductor wafer 200 and within the
trench. The barrier layer 206 may be formed of a material layer
capable of acting as both a metal-diffusion barrier and an adhesive
layer between the ILD films 201a and 202a and a conductive layer,
for example, a Ta layer, TaN layer, Ti layer, TiN layer or a
bilayer of these material layers. Then, a conductive layer 208 is
deposited over the semiconductor wafer 200 with the barrier layer
206. It is preferable that the conductive layer 208 be formed of Cu
or W by electroplating, CVD or sputtering, or by a combination of
these methods. For example, a portion of the conductive layer 208
can be deposited over the barrier layer 206 by sputtering, and then
the other portion can be deposited by electroplating.
[0057] The semiconductor wafer 200 with the conductive layer 208 is
polished by CMP such that the conductive layer 208 remains within
only the trench 107 in the ILD films 201 and 202, thereby resulting
in a metal connection, as shown in FIG. 5.
[0058] Method Embodiment 3
[0059] Another embodiment of the metal interconnect formation
according to the present invention is illustrated by steps in FIGS.
10A through 10D. Referring to FIG. 10A, an ILD film 302 is formed
over a semiconductor wafer 300. It is preferable that the ILD film
302 be formed of a USG layer, SiOF layer, TEOS layer, SOG layer or
BPSG layer. The semiconductor wafer 300 may be a substrate as a
stack of an insulation layer, such as a USG layer, SiOF layer, TEOS
layer, SOG layer or BPSG layer, and a silicon nitride layer
deposited in sequence over a predetermined underlying layer.
[0060] Referring to FIG. 10B, a photoresist pattern 304 that
defines a metal interconnect region is formed on the ILD film 302
by a photolighography process. The upper portion of the ILD film
302 is etched using the photoresist pattern 304 as an etch mask to
form a first trench 306. During the etching to the upper portion of
the ILD film 302, a polymer layer 305' acting as an etch barrier is
spontaneously formed on the sidewalls of the first trench 306. For
a general etching process, CF-based gas such as CHF.sub.3,
CF.sub.4, C.sub.4F.sub.8 or C.sub.3F.sub.8, and an inert gas such
as Ar, He or Ne is used. Non-hydrogen containing CF-based gases
suppress deposition of a polymer layer on the trench sidewalls,
whereas hydrogen containing CF-based gases, such as CHF.sub.3 gas,
facilitates the deposition of polymer layer. For this reason, in
the present embodiment, the etching process is carried out using a
hydrogen containing CF-based gas so that the polymer layer 305'
results on the trench sidewalls. The polymer layer 305' serves as
an etch barrier during a subsequent etching process, thereby
preventing lateral etching.
[0061] Referring to FIG. 10C, the middle portion of the ILD film
302a is etched using the photoresist pattern 304 and the polymer
layer 305' on the upper sidewalls of the ILD film 302a as an etch
mask, thereby resulting in a second trench whose width T.sub.6 is
larger than the upper width T.sub.5. The polymer layer 305' formed
on the upper sidewalls of the ILD film 302a acts as an etch barrier
so that only etching downward is allowed without causing lateral
etching of the upper portion of the ILD film 302b. At the same
time, lateral etching occurs in the middle portion of the ILD film
302b with non-hydrogen containing etching gas. As the trench depth
extends close to the end of the middle portion, a
hydrogen-containing CF-based gas, such as CHF.sub.3 gas, is
supplied, so that a polymer layer 305" acting as an etch barrier,
which prevents downward etching, is deposited at the end of the
middle portion of a second trench. As a result, the second trench
having width T.sub.6 larger than the width T.sub.5 of the first
trench 306 is formed in the middle portion of the ILD film 302b.
Following this, the remaining lower portion of the ILD film 302b is
etched using the photoresist pattern 304, and the polymer layers
305' and 305" deposited on the sidewalls of the first and second
trenches, as an etch mask, thereby resulting in a third trench 307
in the lower portion of the ILD film 302b, having a width T.sub.7
smaller than the width T.sub.6 of the second trench. The polymer
layers 305' and 305" deposited on the sidewalls of the first and
second trenches act as an etch mask, so that only downward occurs.
In this case, it is preferable that the thickness of the middle
portion of the ILD film 302b with the thickness T6 is in the range
of 20-50% of the thickness of the entire ILD film 302b. Deposition
of polymer can be suppressed during etching process, as described
in the first embodiment.
[0062] Referring to FIG. 10D, the photoresist pattern 304 used in
etching the ILD film 302b is removed by a known method, for
example, by ashing. Then, a barrier layer 308 is deposited along
the semiconductor wafer 300 and within the trench. The barrier
layer 308 may be formed of a material layer capable of acting as
both a metal-diffusion barrier and an adhesive layer between the
ILD film 302b and a conductive layer, for example, of a Ta layer,
TaN layer, Ti layer, TiN layer or a bilayer of these material
layers. Then, a conductive layer 310 is deposited over the
semiconductor wafer 300 with the barrier layer 308. It is
preferable that the conductive layer 310 be formed of Cu or W by
electroplating, CVD or sputtering, or by a combination of these
methods. For example, a portion of the conductive layer 310 can be
deposited over the barrier layer 308 by sputtering, and then the
other portion can be deposited by electroplating.
[0063] The semiconductor wafer 300 with the conductive layer 310 is
polished by CMP such that the conductive layer 208 remains within
only the trench surrounded by the ILD film 302b, thereby resulting
in a metal connection, as shown in FIG. 6.
[0064] Method Embodiment 4
[0065] Another embodiment of the metal interconnect formation
according to the present invention is illustrated by steps in FIGS.
11A through 11D. Referring to FIG. 11A, a first ILD film 401 and a
second ILD film 402 are deposited over a semiconductor wafer 400 in
sequence. It is preferable that the first ILD film 401 be formed of
a material, such as a USG layer, SiOF layer, TEOS layer, SOG layer
or BPSG layer, having a lower etch ratio than that of the material
for the second ILD film 402. The second ILD film 402 may be formed
of a material, such as a FOX layer or HOSP layer, having a higher
etching ratio and smaller dielectric constant than those of the
material for the first ILD film 401. Since the FOX layer or HOSP
layer used to form the second ILD film 402 has a smaller dielectric
constant than that of the USG layer or SOG layer used to form the
first ILD film 401, parasitic capacitance of the resulting
semiconductor device decreases. Following this, a third ILD film
403 is formed over the second ILD film 402 with a material having a
lower etch ratio than the second ILD film 402. It is preferable
that the third ILD film 403 is formed of a USG layer, SiOF layer,
TEOS layer, SOG layer or BPSG layer. The thickness of the second
ILD film 402 may be in the range of about 20-50% of the sum of the
thicknesses of the first, second and third ILD films 401, 402 and
403. The semiconductor wafer 400 may be a substrate in which an
insulation layer such as USG layer, SiOF layer, TEOS layer, SOG
layer or BPSG layer, and a silicon nitride layer are deposited in
sequence over a predetermined underlying layer.
[0066] Referring to FIG. 11B, a photoresist pattern 404 which
defines a metal interconnect region is formed on the third ILD film
403 by a photolithography process. Referring to FIG. 11C, the
third, second and first ILD films 403, 402 and 401 are etched in
sequence using the photoresist pattern 404 as an etch mask, thereby
resulting in a trench whose middle width T.sub.9 in the second ILD
film 402a is larger than the upper width T.sub.8 in the third ILD
film 403a and the lower width T.sub.10 in the first ILD film 401a.
The middle width T.sub.9 of the trench can be largest because the
second ILD film 402 has a higher etch ratio compared with the third
and first ILD films 403 and 401.
[0067] Referring to FIG. 11D, the photoresist pattern 404 used is
removed by a known method, for example, by ashing, and a barrier
layer 406 is deposited along the semiconductor wafer 400 with the
trench. The barrier layer 406 may be formed of a material layer
capable of acting as both a metal-diffusion barrier and an adhesive
layer between the ILD films 401a, 402a and 403a, and a conductive
layer, for example, of a Ta layer, TaN layer, Ti layer, TiN layer
or a bilayer of these material layers. Then, a conductive layer 408
is deposited over the barrier layer 406. It is preferable that the
conductive layer 408 is formed of Cu or W by electroplating, CVD or
sputtering, or by a combination of these methods. For example, a
portion of the conductive layer 408 can be deposited over the
barrier layer 406 by sputtering, and then the other portion can be
deposited by electroplating.
[0068] The semiconductor wafer 400 with the conductive layer 408 is
polished by CMP such that the conductive layer 408 remains within
only the trench 107 surrounded by the first, second and third ILD
films 401a, 402a and 403a, thereby resulting in a metal connection,
as shown in FIG. 7.
[0069] As previously mentioned, the metal interconnect structure of
a semiconductor device and the metal interconnect formation
according to the present invention can prevent lifting of metal
interconnect. The inventive metal interconnect structure is wider
at the lower portion than the upper portion, or at the middle
portion than the upper and lower portions, so that lifting of the
metal interconnect caused by stress applied to the ILD film during
a subsequent thermal process can be suppressed. In addition, since
the ILD film is formed of an insulation material having a low
dielectric constant, parasitic capacitance of the semiconductor
device becomes low.
[0070] While this invention has been particularly shown and
described with references to preferred embodiments thereof, it will
be understood by those skilled in the art that various changes in
form and details may be made therein without departing from the
spirit and scope of the invention as defined by the following
claims.
* * * * *