U.S. patent application number 09/972683 was filed with the patent office on 2002-04-11 for micro-mirror apparatus and production method therefor.
This patent application is currently assigned to NIPPON TELEGRAPH AND TELEPHONE CORPORATION. Invention is credited to Higurashi, Eiji, Maruno, Tohru, Sawada, Renshi.
Application Number | 20020041455 09/972683 |
Document ID | / |
Family ID | 26601767 |
Filed Date | 2002-04-11 |
United States Patent
Application |
20020041455 |
Kind Code |
A1 |
Sawada, Renshi ; et
al. |
April 11, 2002 |
Micro-mirror apparatus and production method therefor
Abstract
The micro-mirror apparatus of the invention has; a mirror 33, a
plurality of torsion springs 35, 36 for supporting the mirror 33 so
as to be tiltable relative to an upper substrate 27, a lower
substrate 21 arranged facing a lower face of the mirror 33, a
convex portion 34 provided on an upper face of the lower substrate
21 and a plurality of lower electrodes 22, 23 formed on an outer
face of the convex portion 34. For the torsion spring 36, an aspect
ratio of height/width in a cross-section perpendicular to a
longitudinal direction thereof is at least 1.8.
Inventors: |
Sawada, Renshi; (Atsugi-shi,
JP) ; Higurashi, Eiji; (Atsugi-shi, JP) ;
Maruno, Tohru; (Naka-gun, JP) |
Correspondence
Address: |
DARBY & DARBY P.C.
805 Third Avenue
New York
NY
10022
US
|
Assignee: |
NIPPON TELEGRAPH AND TELEPHONE
CORPORATION
|
Family ID: |
26601767 |
Appl. No.: |
09/972683 |
Filed: |
October 5, 2001 |
Current U.S.
Class: |
359/879 ;
359/298; 359/838; 359/847; 359/871 |
Current CPC
Class: |
Y10S 359/904 20130101;
G02B 26/0841 20130101 |
Class at
Publication: |
359/879 ;
359/298; 359/838; 359/847; 359/871 |
International
Class: |
G02F 001/29; G02B
026/08; G02B 005/08; G02B 007/188; G02B 007/182 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 10, 2000 |
JP |
2000-308975 |
Jun 7, 2001 |
JP |
2001-172146 |
Claims
What is claimed is:
1. A micro-mirror apparatus comprising: a mirror; a plurality of
torsion springs which supports the mirror so as to be tiltable
relative to an upper substrate; a lower substrate arranged facing a
lower face of the mirror; a convex portion provided on an upper
face of the lower substrate and facing a central portion of the
mirror; and a plurality of lower electrodes formed on an outer face
of the convex portion.
2. A micro-mirror apparatus according to claim 1, wherein for the
torsion spring, an aspect ratio of height/width in a cross-section
perpendicular to a longitudinal direction thereof is at least
1.8.
3. A micro-mirror apparatus according to claim 1, wherein a
concavity is formed in an upper face of the lower substrate at a
position facing an outer peripheral edge of the mirror and
surrounding the convex portion.
4. A micro-mirror apparatus according to claim 1, wherein a
supporting point protuberance made from an insulating material is
formed facing a center of the mirror.
5. A micro-mirror apparatus according to claim 1, wherein the
torsion spring has a serpentine form, and a position restricting
portion which restricts a displacement range of the torsion spring
is provided on the upper substrate.
6. A micro-mirror apparatus according to claim 1, wherein the
mirror, the torsion spring, and the upper substrate are integrally
formed from silicon monocrystal, and this silicon monocrystal is
connected to a spacer formed on the lower substrate.
7. A micro-mirror apparatus according to claim 1, wherein wiring
patterns are formed on a lower face of the lower substrate, and
each of the wiring patterns and the lower electrodes are conducted
through a through hole formed in the lower substrate.
8. A micro-mirror apparatus according to claim 1, wherein the upper
substrate is either one of an SOI substrate and a SIMOX
substrate.
9. A micro-mirror apparatus according to claim 1, wherein an
insulating film is formed on at least an opening edge portion of
the concavity.
10. A production method for a micro-mirror apparatus comprising the
steps of: sequentially forming on a support substrate, a first
oxide layer, a first monocrystalline silicon layer, a second oxide
layer and a second monocrystalline silicon layer; forming a slot
passing through the second monocrystalline silicon layer, the
second oxide layer, and the first monocrystalline silicon layer;
forming a polysilicon layer inside the slot; etching the second
monocrystalline silicon layer to form a mirror and a torsion spring
from the second monocrystalline silicon layer; removing the
polysilicon layer inside the slot; etching a portion of the first
monocrystalline silicon layer located beneath the torsion spring,
through the slot; and removing the first oxide layer and the second
oxide layer to make the torsion spring independent.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a micro-mirror apparatus
which can be used in communication optical switch elements,
measuring instruments, displays, scanners and the like, and a
production method therefor.
[0003] 2. Description of the Related Art
[0004] FIG. 34 is an outline perspective diagram showing a
conventional micro-mirror apparatus.
[0005] In this micro-mirror apparatus, as shown in the figure, a
turnable support 2 is provided on a substrate 1, and a base 3 is
turnably provided on the support 2 via a hinge 7. A frame 4 is
provided on the base 3 via a torsion spring (not shown in the
figure), a mirror 5 is provided on the frame 4 via a torsion spring
(not shown in the figure), and a plurality of lower electrodes 6
are provided on a portion of the base 1 facing the mirror 5. By
applying a voltage to these lower electrodes 6, the mirror is
attracted by electrostatic force so that the mirror can be tilted
in optional directions.
[0006] The micro-mirror apparatus shown in FIG. 34 is made by a
surface micro-machining technique. That is, growing of a
polysilicon layer and forming of a silicon oxide layer (SiO.sub.2)
are performed while patterning respective layers, to thereby
alternately deposit a polysilicon layer and a silicon oxide layer.
Then, by finally immersing for example in a buffer hydrofluoric
acid and dissolving the silicon oxide layer to remove the silicon
oxide layer, a moveable part is formed. Since this silicon oxide
layer, for example the silicon oxide layer 11 shown in FIG. 35,
exists for forming a moveable part or a gap it is referred to as a
sacrificial layer.
[0007] In the micro-mirror apparatus shown in FIG. 34, after
forming the patterned layer comprising the silicon oxide layer and
the polysilicon, the silicon oxide layer is removed with the buffer
hydrofluoric acid to form the support 2, the base 3, the frame 4,
and the mirror 5.
[0008] When the micro-mirror apparatus is made by the above method,
if a multiplicity of mirror patterns are formed, there is the
advantage that by merely removing the silicon oxide layer 11 being
the sacrificial layer, a multiplicity of mirrors 5 are formed.
[0009] However, in the above micro-mirror apparatus, electrodes for
the mirror 5 and the lower electrodes 6 are arranged in parallel,
and the gap between electrodes is large. Since the electrostatic
force applied to the mirror 5 is inversely proportional to the
square of the inter-electrode gap, then a high voltage is necessary
to cause a significant tilt to the mirror.
[0010] Furthermore, in this micro-mirror apparatus, since the
mirror 5 is formed from polysilicon, internal strain due to grain
growth conditions remains, and this causes distortion of the mirror
5. Due to this distortion, when collimated light is incident
thereon, this is reflected with the beam having a beam profile of a
warped shape. Consequently, in the case where this micro-mirror
apparatus is used as an optical switch for switching for example
from an input optical fiber to an output optical fiber, there is a
large loss when the collimated beam output from the input fiber is
reflected and then input to the output fiber.
[0011] Therefore, in order to reduce this loss due to distortion of
the mirror 5, a surface distribution of the voltage between the
lower electrodes 6 and the electrodes of the mirror 5 which can
correct this distortion is previously stored in the memory of a
computer, and based on this, the distribution of electrostatic
force applied to the mirror 5 is controlled, to thereby correct the
distortion of the mirror 5. However, such correction is extremely
troublesome.
[0012] Furthermore, the torsion spring for applying a restoring
force to the mirror is formed from polysilicon, and since
polysilicon has many grain boundaries, when a repetitive force
acts, this becomes a cause of fatigue failure at the grain
boundaries. Consequently, when a repetitive force is applied,
fatigue advances rapidly so that life becomes a problem.
[0013] Furthermore, since the support 2 which supports the mirror 5
is also made from polysilicon, there is also a problem in that the
support 2 distorts due to fluctuations in the electrostatic force
applied to the mirror 5.
[0014] Moreover, since the printed wiring for energizing each of
the lower electrodes 6 is formed on the surface side of the base 1,
then in a case where the mirror 5 is configured in multiple aligned
arrays, the necessary wiring pattern width becomes fine.
Furthermore, since it is necessary for the wiring to avoid the
support 2, there is a problem in that the wiring degree of freedom
is reduced.
SUMMARY OF THE INVENTION
[0015] It is an object of the present invention to provide a
micro-mirror apparatus where the mirror can be greatly tilted with
a low voltage.
[0016] To achieve this object, the micro-mirror apparatus of the
present invention has; a mirror, a plurality of torsion springs
which supports the mirror so as to be tiltable relative to an upper
substrate, a lower substrate arranged facing a lower face of the
mirror, a convex portion provided on an upper face of the lower
substrate and facing a central portion of the mirror, and a
plurality of lower electrodes formed on an outer face of the convex
portion.
[0017] According to this micro-mirror apparatus, by forming the
convex portion, at least one part of the mirror and the lower
electrode can be made close, so that the voltage necessary for
tilting the mirror can be reduced.
[0018] For the torsion spring, an aspect ratio of height/width in a
cross-section perpendicular to a longitudinal direction thereof is
at least 1.8. In this case it becomes easier to tilt the mirror
while maintaining the support strength due to the torsion spring,
and hence the voltage necessary for tilting the mirror can be
reduced.
[0019] A concavity may be formed in an upper face of the lower
substrate at a position facing an outer peripheral edge of the
mirror and surrounding the convex portion. In this case the mirror
can be tilted until the outer peripheral edge of the mirror enters
the concavity. Hence the tilt range of the mirror can be increased,
and since the mirror is unlikely to contact with the lower
substrate, damage to the mirror can be prevented.
[0020] A supporting point protuberance made from an insulating
material may be formed facing a center of the mirror. In this case,
excessive downward displacement of the mirror can be prevented by
the supporting point protuberance, so that there is no shorting
between the mirror electrodes and the lower electrodes. Hence,
damage to the mirror electrodes and the lower electrodes can be
prevented.
[0021] The torsion spring may have a serpentine form, and a
position restricting portion which restricts a displacement range
of the torsion spring may be provided on the upper substrate. In
this case, excessive displacement of the torsion spring and the
mirror can be prevented by the position restricting portion, and
damage to the torsion spring can be prevented.
[0022] The mirror, the torsion spring, and the upper substrate may
be integrally formed from a silicon monocrystal, and this silicon
monocrystal may be connected to a spacer formed on the lower
substrate. In this case, the flatness of the mirror can be
increased and the life of the torsion spring can be extended.
[0023] Wiring patterns may be formed on a lower face of the lower
substrate, and each of these wiring patterns and the lower
electrodes may be conducted through a through hole formed in the
lower substrate. In this case, the degree of freedom for the wiring
to the lower electrode is increased and not only can the wiring can
be simplified, but also the wiring pattern width can be
widened.
[0024] A production method for a micro-mirror apparatus of the
present invention comprises the steps of:
[0025] sequentially forming on a support substrate, a first oxide
layer, a first monocrystalline silicon layer, a second oxide layer
and a second monocrystalline silicon layer;
[0026] forming a slot passing through the second monocrystalline
silicon layer, the second oxide layer, and the first
monocrystalline silicon layer;
[0027] forming a polysilicon layer inside the slot;
[0028] etching the second monocrystalline silicon layer to form a
mirror and a torsion spring from the second monocrystalline silicon
layer;
[0029] removing the polysilicon layer inside the slot;
[0030] etching a portion of the first monocrystalline silicon layer
located beneath the torsion spring, through the slot; and
[0031] removing the first oxide layer and the second oxide layer to
make the torsion spring independent.
[0032] According to this production method, the mirror and the
torsion spring can be easily formed integrally.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] FIG. 1 is a disassembled perspective view showing a
micro-mirror apparatus according to the present invention.
[0034] FIG. 2 is a perspective view showing a part of the
micro-mirror apparatus shown in FIG. 1.
[0035] FIG. 3 is a section view on A-A of FIG. 2.
[0036] FIG. 4 is a perspective view showing a part of another
micro-mirror apparatus according to the present invention.
[0037] FIG. 5A through FIG. 5D are explanatory diagrams of a
production method for the micro-mirror apparatus shown in FIG.
4.
[0038] FIG. 6A through 6C are explanatory diagrams of the
production method for the micro-mirror apparatus shown in FIG.
4.
[0039] FIG. 7 is a perspective view showing a part of another
micro-mirror apparatus according to the present invention
[0040] FIG. 8 is a cross-section showing a part of the micro-mirror
apparatus shown in FIG. 7.
[0041] FIG. 9 shows a part of another micro-mirror apparatus
according to the present invention.
[0042] FIG. 10 is a disassembled perspective view showing another
micro-mirror apparatus according to the present invention.
[0043] FIG. 11 is a disassembled perspective view showing another
micro-mirror apparatus according to the present invention.
[0044] FIG. 12 is a disassembled perspective view showing another
micro-mirror apparatus according to the present invention.
[0045] FIG. 13 is a perspective view showing a part of the
micro-mirror apparatus shown in FIG. 12.
[0046] FIG. 14A through FIG. 14D are explanatory diagrams of a
production method for the micro-mirror apparatus shown in FIG. 12
and FIG. 13.
[0047] FIG. 15A through FIG. 15C are explanatory diagrams of the
production method for the micro-mirror apparatus shown in FIG. 12
and FIG. 13.
[0048] FIG. 16 is an outline sectional drawing showing a
micro-mirror apparatus according to the present invention.
[0049] FIG. 17 is an outline plan view showing a lower substrate of
the micro-mirror apparatus shown in FIG. 16.
[0050] FIG. 18 is a diagram for explaining the operation of the
micro-mirror apparatus shown in FIG. 16 and FIG. 17.
[0051] FIG. 19 is a diagram for explaining the operation of the
micro-mirror apparatus shown in FIG. 16 and FIG. 17.
[0052] FIG. 20 is a diagram for explaining the operation of the
micro-mirror apparatus shown in FIG. 16 and FIG. 17.
[0053] FIG. 21 is an outline plan view showing a lower substrate of
another micro-mirror apparatus according to the present
invention.
[0054] FIG. 22 is a section view on B-B of FIG. 21.
[0055] FIG. 23 is a plan view showing a lower substrate of another
embodiment of the present invention.
[0056] FIG. 24 is a plan view showing an upper substrate of the
other embodiment
[0057] FIG. 25 and FIG. 26 are plan views showing a stopper
mechanism for a torsion spring.
[0058] FIG. 27 is a longitudinal section of another embodiment.
[0059] FIG. 28 is a longitudinal section showing another
embodiment.
[0060] FIG. 29 is a graph showing results of the present
invention.
[0061] FIG. 30 is a cross-section of Examples of the present
invention.
[0062] FIG. 31 is a cross-section of Comparative Example.
[0063] FIG. 32 is a graph showing the results in the apparatuses of
FIGS. 30 and 31.
[0064] FIG. 33 is a section showing another embodiment.
[0065] FIG. 34 is an outline perspective view showing a
conventional micro-mirror apparatus.
[0066] FIG. 35 is an explanatory diagram of a production method for
the micro-mirror apparatus shown in FIG. 34.
DETAILED DESCRIPTION OF THE INVENTION
[0067] FIG. 1 is a perspective view showing a first embodiment of a
micro-mirror apparatus according to the present invention, FIG. 2
is a perspective view showing the micro-mirror support structure,
and FIG. 3 is a sectional view on A-A of FIG. 2. The present
invention is not limited to only the following embodiments, and
various modifications may be added within a scope which does not
deviate from the gist of the present invention.
[0068] As shown in the figures, a protruding portion 34 of
rectangular shape is provided on a central portion of a lower
substrate (lower electrode substrate) 21 made from monocrystalline
silicon having a crystal orientation (100), and respective lower
electrodes 22 are provided on the top face of the protruding
portion 34 near the four comers.
[0069] A plurality of spaced apart lower electrodes 23 are also
provided around the protruding portion 34 (in this example eight).
A patterned wiring 24 is provided on a lower face of the lower
substrate 21, and the lower electrodes 23 and the wiring 24 are
respectively electrically connected through through holes 25
piercing the lower substrate 21.
[0070] Solder portions 26 made of AuSn are provided on opposite
sides on the upper face of the lower substrate 21. Furthermore,
supports 28 made from monocrystalline silicon having a crystal
orientation (100) are provided on a lower face of an upper
substrate (mirror forming substrate) comprising an SOI (Silicon On
Insulator) substrate. Upper widths of the supports 28 are for
example 1 mm, while lower widths are 300 .mu.m. Connection portions
29 comprising three layers of Ti/Pt/Au are provided on the lower
portions of the supports 28, and the supports 28 are connected to
the solder portions 26 of the lower substrate 21. As a result, the
upper substrate 27 is bonded to the lower substrate 21.
[0071] A silicon oxide layer 30 is provided on an upper surface of
the upper substrate 27, a base 31 comprising monocrystalline
silicon is provided on the silicon oxide layer 30, an annular frame
32 is provided inside the base 31, and a mirror 33 is provided
inside of the frame 32. A three layer Ti/Pt/Au layer is formed on
the surface of the mirror 33 to make this conductive. The mirror 33
is supported by the support 28, and a space between the lower
electrodes 22 and the mirror 33 is set for example to 20 .mu.m
while a space between the lower electrodes 23 and the mirror 33 is
set for example to 40 .mu.m.
[0072] The base 31 and the frame 32 are connected by torsion
springs 35 at two places 180.degree. apart, and the frame 32 and
the mirror 33 are connected by torsion springs 36 at two places
180.degree. apart. The torsion springs 35 and 36 are made the same
shape. A line through the torsion spring 35 pair is orthogonal to a
line through the torsion spring 36 pair. The base 31, the frame 32,
the mirror 33 and the torsion springs 35 and 36 are integrally
formed from monocrystalline silicon.
[0073] An aspect ration a/b of a cross-section of the torsion bars
35 and 36 where "a" is the height and "b" is width becomes an
important parameter. Preferably the aspect ratio a/b is at least
1.8, more preferably 2.5 to 8, and most preferably about 3. If the
aspect ratio a/b is at least 1.8, as well as the torsion springs 35
and 36 being easier to twist, the torsion springs 35 and 36 are
less susceptible to deflection due to the weight of the mirror and
the electrostatic force F. Therefore, attitude control of the
mirror 36 is more accurately performed. This effect is explained as
follows.
[0074] The torsion springs 35 not only function as springs for
applying a twisting (torsion) restoring force but also function as
a support which supports the weight of the mirror 33 portion.
Therefore, a bending stress is applied to the torsion springs 35 by
the weight of the mirror 33 and the electrostatic force F for
driving the mirror 33, and although the mirror 33 may be firmly
supported by the supports 28, this becomes a source causing
deflection of the mirror 33. If the cross-section height of the
torsion spring 35 is "a", the width "b", a constant is .beta., and
the shearing modulus of the monocrystalline silicon is G, a
relational expression for twist angle .theta. and torsion T of the
torsion spring 35 is expressed by the following equation:
.theta.=T/.beta.a b.sup.3 G
[0075] Furthermore, if .alpha. is a constant, E is the longitudinal
section elastic modulus of monocrystalline silicon, and I is the
second moment of area of the torsion spring 35, a relational
expression for bending deflection amount .delta. and the
electrostatic force F is expressed by the following equation:
.delta.=F .alpha./EI
[0076] The second moment of area I is expressed by the following
equation:
I=ba.sup.3/12
[0077] Consequently, if a constant is A, the ratio .delta./.theta.
for the bending deflection .delta. and the twist angle .theta. is
expressed by the following equation:
.delta./.theta.=A.beta.(b/a).sup.2
[0078] Therefore, by making the height "a" much greater than the
width "b", twisting becomes relatively easy, and deflection due to
the weight of the mirror and the electrostatic force F becomes
small.
[0079] In this micro-mirror apparatus, by making the upper
substrate 27 negative, and applying a positive electric field to
the lower electrodes 22 and 23, and generating an asymmetric
potential difference between the lower electrodes 22 and 23, the
mirror can be tilted in optional directions. For example, if a 60 V
voltage is applied to all the lower electrodes 22 and 23 on one
side, the mirror can be tilted approximately 10.degree..
[0080] In such a micro-mirror apparatus, the electrostatic force
applied to the mirror is inversely proportional to the square of
the inter-electrode gap. However since the protruding portion 34 is
formed on the upper face of the lower substrate 21 facing the
center portion of the mirror 33, and the lower electrodes 22 are
formed on the upper face of the protruding portion 34, the distance
between the mirror 33 and the lower electrodes 22 can be made small
without narrowing the turning range of the mirror 33. Consequently,
the mirror 33 can be greatly tilted with a low voltage.
[0081] Furthermore, in this embodiment, since the mirror 33 is
formed from hard monocrystalline silicon rather than polysilicon,
there is no residual distortion inside the mirror 33 and hence
deformation due to internal strain is minimal. Consequently, when a
collimated beam is shone, a warped shape beam profile does not
occur. Moreover, in the case where this micro-mirror apparatus is
used as an optical switch for switching from an input optical fiber
to an output optical fiber, loss when the collimated beam output
from the input optical fiber is reflected and then input to the
output fiber can be reduced. Consequently, there is no longer the
need to control the distribution of electrostatic force applied to
the mirror 33 to compensate for distortion of the mirror 33.
[0082] Furthermore, in this embodiment, since the torsion springs
35 and 36 for applying a restoring force to the mirror 33 are
formed from monocrystalline silicon, fatigue from the repetitive
force is less likely to occur, and life is thus extended.
[0083] In addition, since an SOI substrate is used for the upper
substrate 27, the micromirror apparatus can be easily produced.
[0084] Moreover, since the support 28 which supports the mirror 33
is also made from hard monocrystalline silicon, distortion of the
support 28 due to fluctuations in the electrostatic force applied
to the mirror 33 is obviated, so that attitude control of the
mirror is accurately performed.
[0085] In addition, since the upper substrate 27 on which the
mirror 33 is provided is made separate from the lower substrate 21
on which the lower electrodes 22 and 23 are provided, the
occurrence of mirror sticking at the time of manufacture is
obviated.
[0086] Furthermore, since the lower electrodes 23 and the wiring 24
are connected via the through holes 25, it is not necessary to wire
to avoid the lower electrodes 22 and 23, and the support 28.
Therefore the pattern width of the wiring 24 for driving the mirror
33 can be made wider, and the wiring degree of freedom and the
wiring density can be increased.
[0087] A production method for the micro-mirror apparatus shown in
FIG. 1 through FIG. 3 will now be described. At first, oxygen irons
are implanted into the monocrystalline silicon substrate having a
crystal orientation (100), to form the silicon oxide layer 30 of a
uniform depth giving a SIMOX substrate. Monocrystalline silicon is
then grown on the active layer of the SIMOX substrate by epitaxy to
form an SOI layer of approximately 10 .mu.m thickness, thus
preparing an SOI substrate.
[0088] Then, the SOI layer of the SOI substrate is doped with
impurities to give an impurity concentration of 1.times.10.sup.20,
so that the resistance becomes several thousandths .OMEGA.cm. Next,
a reflection coating comprising three layers of Ti/Pt/Au is formed
by lift-off. The connection portions 29 comprising three layers of
Ti/Pt/Au are then patterned on the rear face of the support
substrate of the SOI substrate using a two face aligner to match
with the mirror pattern on the front face thereof. Then the
supports 28 are formed by back etching the support substrate.
[0089] Next, the SOI layer is etched using ICP (inductively-coupled
plasma), to thereby integrally form the base 31, the frame 32, the
mirror 33 and the torsion springs 35 and 36. Then, after forming a
silicon oxide layer (passivation film) on the surface with PCVD
(plasma CVD) to protect the surface, this is etched with an etchant
of KOH. For the etching conditions and so forth, reference can be
made to H. Seidel et al., Anisotropic Etching of Crystalline
Silicon in Alkaline Solutions I., J. Electrochem. Soc., Vol. 137,
No. 11 (1990) 3612-3626, and H. Seidel et al., Anisotropic Etching
of Crystalline Silicon in Alkaline Solutions II., J. Electrochem.
Soc., Vol. 137, No. 11 (1990) 3626.
[0090] After forming the protruding portion 34 by etching the
monocrystalline silicon substrate having a crystal orientation
(100) with KOH, forming the lower electrodes 22 and 23, and forming
the three layer Ti/Pt/Au layer on the lowest portion of the step,
the solder portion 26 is formed on the Ti/Pt/Au layer.
[0091] Next, the through holes 25 are formed corresponding to the
lower electrodes 23, and the wiring 24 is formed on the rear
surface side of the monocrystalline silicon substrate. Then, after
aligning the position of the upper substrate 27 with the lower
substrate 21, the connection portions 29 are pressed against the
solder portions 26 and heated to 390.degree. C., so that the solder
of the solder portions 26 is melted, thereby bonding the lower
substrate 21 to the upper substrate 27.
[0092] According to this production method for the micro-mirror
apparatus, since the mirror 33 is formed from monocrystalline
silicon, there is no deformation due to internal strain.
Furthermore, since the torsion springs 35 and 36 are formed from
monocrystalline silicon, life with respect to repetitive forces is
extended.
[0093] FIG. 4 is a perspective view showing a part of another
micro-mirror apparatus according to the present invention. As shown
in the figure, a lower silicon layer 41 comprising monocrystalline
silicon is provided on a support 28, a silicon oxide layer 42 is
provided on the lower silicon layer 41 and an upper silicon layer
43 comprising monocrystalline silicon is provided on the silicon
oxide layer 42. A base 31 is thus constructed by the lower silicon
layer 41, the silicon oxide layer 42 and the upper silicon layer
43.
[0094] A torsion spring 35 and a frame 32 are formed by the upper
silicon layer 43. Furthermore, a horizontal retention portion 44
for preventing the occurrence of deflection of the torsion spring
35 due to the weight of the mirror 33 portion and the electrostatic
force F, is provided beneath the torsion spring 35. The retention
portion 44 is constructed from a part of the lower silicon layer
41. If an excess load is applied to the mirror 33, the tip end of
the torsion spring 35 contacts with the retention portion 44 so
that further displacement is restricted.
[0095] In this micro-mirror apparatus, since the retention portion
44 is provided for preventing the occurrence of deflection in the
torsion spring 35 due to the weight of the mirror 33 portion and
the electrostatic force F, there is no longer the need to make the
ratio a/b of the torsion spring 35 as large. Hence forming the
torsion spring 35 is facilitated.
[0096] The production method for the micro-mirror apparatus of FIG.
4 will now be explained using FIG. 5A through FIG. 5D and FIG. 6A
through FIG. 6C.
[0097] As shown in FIG. 5A, on a support substrate 50 comprising
monocrystalline silicon is formed in order; a silicon oxide layer
45, the lower silicon layer 41, the silicon oxide layer 42 and the
upper silicon layer 43, and the connection portion 29 is formed on
the lower portion of this five layer construction substrate.
[0098] Next, as shown in FIG. 5B, a slot (hole) 46 which reaches to
the lower silicon layer 41 is formed by etching. Then, as shown in
FIG. 5C, slots (holes) 47a and 47b which penetrate to the silicon
oxide layer 45 are formed by etching. In this case, at first the
upper silicon layer 43 is etched using ICP with an SF.sub.6 gas and
the silicon oxide layer 42 is reactive etched with a CF based gas.
After this, the lower silicon layer 41 is further etched using ICP
with SF.sub.6 gas, and the silicon oxide layer 45 is reactive
etched with the CF based gas.
[0099] Next, as shown in FIG. 5D, polysilicon layers 48 are formed
inside the slots 46, 47a and 47b.
[0100] Then, as shown in FIG. 6A, the torsion spring 35 is formed
by etching the upper silicon layer 43. In this case, the silicon
oxide layer 42 becomes an etching stopper.
[0101] Then, as shown in FIG. 6B, the three layer Ti/Pt/Au layer 49
is formed on the upper face of the upper silicon layer 43. Next, as
shown in FIG. 6C, the support 28 is formed by back etching the
support substrate 50. In this case, since the slot 47b passes
through the silicon oxide layer 45, the slot 47b portion of the
lower silicon layer 41 is also etched to thereby form the retention
portion 44.
[0102] Next, the silicon oxide layers 42 and 45 are removed by
soaking in a buffer hydrofluoric acid, to thereby separate the
bottom of the torsion spring 35 from the retention portion 44.
[0103] In the production method for this micro-mirror apparatus,
since the slot 47a passes through the silicon oxide layers 42 and
45, the silicon oxide layers 42 and 45 are removed by soaking in
the buffer hydrofluoric acid. However at this time, in the base 31,
removal of the silicon oxide layers 42 and 45 can be prevented.
Therefore, in the base 31, the support substrate 50 (support 28),
the lower silicon layer 41 and the upper silicon layer 43 are not
separated.
[0104] FIG. 7 is a perspective view showing a part of another
micro-mirror apparatus according to the present invention, while
FIG. 8 is a cross-section showing a part of the micro-mirror
apparatus shown in FIG. 7. As shown in the figures, a lower silicon
layer 51 comprising monocrystalline silicon is provided on a
support 28, a central layer 52 comprising Si-B-O of a thickness of
10 .mu.m is formed on the lower silicon layer 51, and an upper
silicon layer 53 comprising monocrystalline silicon is formed on
the central layer 52. A base 31 is thus constructed by the lower
silicon layer 51, the central layer 52 and the upper silicon layer
53.
[0105] A lower electrode plate 54 are formed on a portion of the
lower silicon layer 51, and upper electrodes 55 are provided
between a torsion spring 35 and a frame 32 which are constituted by
the upper silicon layer 53. The width of the upper electrodes 55,
that is the dimension in a direction of a line through opposite
ends of the torsion spring 35 is 40 .mu.m and the length
perpendicular to this is 55 .mu.m.
[0106] An input electrode 56 connected to electrodes of the lower
electrode plate 54 is formed on the base 31, and input electrodes
57 electrically connected to the upper electrode plate 55 are
formed on portions on opposite sides of the torsion spring 35.
[0107] In this micro-mirror apparatus, when a negative voltage is
applied to the input electrode 56, and a positive voltage is
applied to the input electrodes 57, the upper electrode plates 55
can be tilted, and hence the mirror can be tilted.
[0108] With such a micro-mirror apparatus, since the thickness of
the inner layer 52 is 10 .mu.m, a gap between the lower electrode
plate 54 and the upper electrode plate 55, that is an
inter-electrode gap is 10 .mu.m. Therefore, since electromotive
force is proportional to the square of the inter-electrode gap, the
mirror can be even further tilted. That is, while the area of the
upper electrode plate 55 is only one sixth of the area of the
micro-mirror apparatus, since the inter-electrode gap is one
quarter of the inter-electrode gap of 40 .mu.m for when there is no
step provided for the electrodes of the lower electrode plate, the
voltage applied to the input electrodes 56 and 57 can be made less
than one half, that is 40 V, compared to when a step is not
provided on the electrode portion of the lower substrate.
[0109] In this example, in the case where lower electrodes are also
provided on the protruding portion 34 of the lower substrate 21 as
shown in FIG. 1, and these are used together, the voltage applied
to the input electrodes 56 and 57 can be made for example less than
25 V.
[0110] In the case of producing the micro-mirror apparatus shown in
FIG. 7 and FIG. 8, Si-B-O is deposited on a SOI layer (lower
silicon layer 51) of a SOI substrate, and a SIMOX substrate
obtained by epitaxial crystal growth is superposed thereon and
sintered to thereby bond the SOI substrate and the SIMOX substrate
(refer to Japanese Unexamined Patent Application, First Publication
61-242033). Then, if the substrate is made by polishing and
etching, the thickness of the intermediate layer 52 can be easily
made 10 .mu.m.
[0111] FIG. 9 shows a part of another micro-mirror apparatus
according to the present invention. As shown in the figure, a
torsion spring 61 is provided between a base 31 and a frame 32, so
that the frame 32 can be tilted about two orthogonally intersecting
axes relative to the base 31.
[0112] FIG. 10 is a disassembled perspective view showing another
micro-mirror apparatus according to the present invention. As shown
in the figure, a protruding portion 72 is provided on a lower
substrate (lower electrode substrate) 71 comprising a
monocrystalline silicon having a crystal orientation (100), lower
electrodes 73 are provided on the protruding portion 72, and wiring
74 is provided on an upper surface of the lower substrate 71. The
lower electrodes 73 are connected to the wiring 74, and a support
80 comprising monocrystalline silicon is provided on the upper
surface of the lower substrate 71.
[0113] A frame portion 79 comprising monocrystalline silicon having
a crystal orientation (100) is provided on an upper substrate
(mirror forming substrate) 75, a base 76 comprising monocrystalline
silicon is provided on the frame portion 79 and an annular frame 77
is provided inside the base 76. A mirror 78 is provided inside of
the frame 77, a three layer Ti/Pt/Au layer is provided on the
surface of the mirror 78, and a space between the lower electrodes
73 and the mirror 78 is 20 .mu.m.
[0114] As with the micro-mirror apparatus shown in FIG. 1, the base
76 and the frame 77 are connected by torsion springs (not shown in
the figure) at two places, and the frame 77 and the mirror 78 are
connected by torsion springs (not shown in the figure) at two
places. Furthermore, the upper substrate 75 is fixed to the support
80 with solder, so that the upper substrate 75 is bonded to the
lower substrate 71.
[0115] In this micro-mirror apparatus, the frame portion 79 can be
formed by back etching the support substrate of the SOI substrate.
Moreover, the frame 77, the mirror 78 and the torsion spring can be
integrally formed by etching the SOI layer of the SOI
substrate.
[0116] FIG. 11 is a disassembled perspective view showing another
micro-mirror apparatus according to the present invention. As shown
in the figure, wiring 81 is provided on a lower face of the lower
substrate 71, that is the page lower face of FIG. 11, and through
holes 82 for connecting the lower electrodes 73 to the wiring 81
are provided.
[0117] In this micro-mirror apparatus, since the lower electrodes
73 and the wiring 81 are connected via the through holes 82, it is
not necessary to wire to avoid the lower electrodes 73 and the
support 80. Therefore the pattern width of the wiring 81 for
driving the mirror 78 can be made wider.
[0118] FIG. 12 is a disassembled perspective view of another
micro-mirror apparatus according to the present invention. As shown
in the figure, lower electrodes 92 are provided on an upper face,
that is a page upper face in FIG. 12, of a lower substrate (lower
electrode substrate) 91 comprising a monocrystalline silicon having
a crystal orientation (100), wiring 93 is provided on the lower
substrate 91, and the lower electrodes 92 are connected to the
wiring 93.
[0119] A frame portion 101 comprising monocrystalline silicon
having a crystal orientation (100) is provided on an upper
substrate (mirror forming substrate) 94, and a base 95 comprising
monocrystalline silicon is provided on the frame portion 101. An
annular frame 96 is provided inside the base 95, a mirror 97 is
provided inside of the frame 96, and a three layer Ti/Pt/Au layer
is provided on the surface of the mirror 97. A protruding portion
98 is provided on the rear face of the mirror 97.
[0120] As with the micro-mirror apparatus shown in FIG. 1, the base
95 and the frame 96 are connected by torsion springs (not shown in
the figure) at two places, and the frame 96 and the mirror 97 are
connected by torsion springs (not shown in the figure) at two
places. The base 95, the frame 96, the mirror 97 and the torsion
springs all comprising monocrystalline silicon, are integrally
formed.
[0121] Supports 102 are provided at opposite side portions of the
base 95. The supports 102 are fixed to the lower substrate 91 with
solder, so that the upper substrate 94 is bonded to the lower
substrate 91. That is to say, in this embodiment, the upper
substrate 94 shown in FIG. 12 is turned upside down, that is the
front and rear are reversed, so that the upper substrate 94 is
bonded to the lower substrate 91.
[0122] In this micro-mirror apparatus, since the protruding portion
98 is provided on the rear face of the mirror 97, the gap between
the lower electrodes 92 and the mirror 97, that is the
inter-electrode gap can be made small, and since as mentioned above
electrostatic force is inversely proportional to the square of the
inter-electrode gap, the mirror 97 can be tilted even more.
[0123] FIG. 13 is a perspective view showing a part of another
micro-mirror apparatus according to the present invention. As shown
in the figure, a torsion spring 99 is provided between a base 76
and a frame 77, and a retention portion 100 is provided for
preventing the occurrence of bending due to the weight of the
mirror 78 portion and the electrostatic force F.
[0124] The production method for the micro-mirror apparatus shown
in FIG. 13 will now be explained using FIG. 14A through 14D and
FIG. 15A through 15C.
[0125] As shown in FIG. 14A, a silicon oxide layer 112 is provided
on a support substrate 111 comprising a monocrystalline silicon.
Furthermore a silicon layer (SOI layer) 113 is provided on the
silicon oxide layer 112, and a connection portion 114 comprising
three layers of Ti/Pt/Au is provided on a lower portion of the SOI
substrate. An etching layer is formed on the silicon layer 113, and
a slot (hole) 115 is formed in the silicon layer 113.
[0126] Next, as shown in FIG. 14B, after oxidizing the surface of
the silicon layer 113 to form a silicon oxide layer 116, a slot
(hole) 117 which reaches to the support substrate 111 is formed by
etching. In this case, after reactive etching the silicon oxide
layer 116 with a CF based gas, the silicon layer 113 is etched
using ICP with an SF.sub.6 gas. Then, after further reactive
etching the silicon oxide layer 112 with the CF based gas, the
support substrate 111 is etched using ICP with SF.sub.6 gas.
[0127] Next, as shown in FIG. 14C, a slot (hole) 118 is formed in
the silicon oxide layer 116 by etching. Then, as shown in FIG. 14D,
a polysilicon layer 119 is formed on the surface, after which a
part of the polysilicon layer 119 is removed by etching.
[0128] Then, as shown in FIG. 15A, a silicon oxide layer
(passivation film) 120 is formed on the surface by PCVD. Next, as
shown in FIG. 15B, a frame portion 79 is formed by back etching the
support substrate 111.
[0129] Then, as shown in FIG. 15C, the oxide silicon layers 112,
116 and 120 are removed by soaking in a buffer hydrofluoric acid,
to thereby form the torsion spring 99 and the retention portion
100.
[0130] In the production method for this micro-mirror apparatus,
since the slot 117 passes through the silicon oxide layer 112, the
silicon oxide layers 112 is removed by soaking in the buffer
hydrofluoric acid. However at this time, in the base 76, removal of
the silicon oxide layer 112 can be prevented. Therefore, in the
base 76, the support substrate 111 (frame portion 79), and the
silicon layer 113 are not separated.
[0131] In the abovementioned respective embodiments, an SOI
substrate is used as the substrate, that is the upper substrate,
however a SIMOX substrate may be used as the substrate.
[0132] Furthermore, in the abovementioned respective embodiments,
silicon oxide layers 42, 45, the central layer 52, and the silicon
oxide layer 112 are used as the oxide layer, however other oxide
layers may be used.
[0133] Moreover, in the above respective embodiments, a single
mirror 33, 78 is provided on the upper substrate 27, 75. However
many mirrors (an array mirror) may be provided on the upper
substrate. In this case, when wiring for driving the mirrors is
provided on the lower substrate, and through holes for conducting
between the lower electrodes and the wiring are provided in the
lower substrate, the pattern width of the wiring can be made
wider.
[0134] Furthermore, in the abovementioned respective embodiments,
the silicon oxide layer 45 is provided on the support substrate 50
comprising monocrystalline silicon, and a three layer construction
substrate with a lower silicon layer 41, a silicon oxide layer 42
and an upper silicon layer 43 provided on the silicon oxide layer
45 is used. However the construction may be such that a glass
particle (soot) with silica as the principal ingredient, is
deposited on one of the two SIMOX substrates which has been
subjected to epitaxial grain growth, and the other SIMOX substrate
is superposed thereon and sintered to thereby bond the two SIMOX
substrates (refer to Japanese Unexamined Patent Application, First
Publication No. 61-242033). Then the substrate is made by polishing
and etching.
[0135] Next is a description of an embodiment which can prevent the
mirror 33 and the protruding portion 34 from contacting over a
large area (referred to as pull-in).
[0136] Since electrostatic force F is inversely proportional to the
square of distance d, as soon as the mirror becomes closer than a
certain predetermined distance to the protruding portion 34, there
is a case where the electrostatic force F becomes slightly larger
than the restoring force of the torsion springs 35 and 36 for
returning to the mirror 33 to the original position, so that the
mirror 33 and the protruding portion 34 contact over a large
area.
[0137] This pull-in is more likely to occur with the distance d
being made as small as possible so that the mirror 33 is turned
with a small voltage V, and the smaller the spring constant of the
torsion springs 35 and 36 and the closer the tilt limit value comes
to a value just on a threshold value which causes pull-in.
Therefore, so that the threshold value causing pull-in is not
exceeded, the voltage must be very accurately controlled over
several milli seconds. This attitude control of the mirror 33 over
several milli seconds corresponds to switching time.
[0138] When the mirror 33 is pulled in, the electrode of the mirror
33 and the lower electrodes 22 are shorted, so that the electrode
of the mirror 33 and the lower electrodes 22 are damaged. In the
case of an array mirror, since the spring coefficient of the
torsion springs 35 and 36 of the respective mirrors 33 are not
equal, there is the case where the electrostatic forces F causing
pull-in of the mirror 33 differ. In this case, the characteristics
of the respective mirrors 33 differ significantly so that this
cannot be put to practical use.
[0139] When the rotation of the mirror 33 becomes large, the edge
of the mirror 33 (perimeter portion) and the lower substrate 21
contact at a point. Therefore a stress concentration momentarily
occurs at the edge of the mirror 33, making the mirror susceptible
to damage. Furthermore, if the mirror is thin and thus susceptible
to deformation, this can incline to make the distance d which
brings about pull-in less than the threshold value. Moreover, even
if pull-in does not arise, when the mirror 33 is made to approach
the lower electrodes 22 and 23 by the electrostatic force F, that
is when the mirror 33 is shifted towards the lower electrodes 22
and 23, the optical axis of the light beam incident on the mirror
33 shifts. Therefore, any shift of the mirror 33 towards the lower
electrode 22 and 23 must be kept as small as possible.
[0140] The present invention is aimed at solving such problems. In
order to achieve this object, in the present embodiment, a
micro-mirror apparatus having a mirror and a lower substrate
provided with lower electrodes, is provided with a protuberance
comprising an insulating material, on a part where the lower
electrodes of the lower substrate are provided.
[0141] FIG. 16 is an outline section view showing a micro-mirror
apparatus according to this embodiment, while FIG. 17 is an outline
plan view showing a lower substrate of the micro-mirror apparatus
shown in FIG. 16. As shown in the figures, a protruding portion
253, 40 .mu.m high is provided on the lower substrate (lower
electrode substrate) 241 comprising monocrystalline silicon having
a crystal orientation (100), and lower electrodes 242 are provided
on the protruding portion 253. A protuberance 243 with a surface
comprising an insulating material and with a height of 5 .mu.m and
a width of 3 .mu.m, is provided at the center of the protruding
portion 253, that is at the center of the lower electrodes 242. A
recess 244 is provided surrounding the lower electrodes 242, and an
insulating film 245 is provided on the surface of the lower
substrate 241 including the side wall upper portion of the recess
244 and the opening edge portion. The lower electrodes 242 are
provided on the insulating film 245.
[0142] Supports 246 comprising monocrystalline silicon having a
crystal orientation (100) are provided on an upper substrate
(mirror forming substrate) 252 comprising an SOI substrate, and the
supports 246 are attached to the lower substrate 241, to thereby
bond the upper substrate 252 to the lower substrate 241.
[0143] A base 247 comprising monocrystalline silicon with a
thickness of approximately 10.mu.m is provided on the supports 246,
an annular frame 248 is provided inside the base 247, and a mirror
249 is provided inside of the frame 248. An electrode comprising
three layers of Ti/Pt/Au is provided on the surface of the mirror
249. The mirror 249 is supported in space by the support 246, and
the distance between the lower electrodes 242 and the mirror 249 is
20 .mu.m. Furthermore, the base 247 and the frame 248 are connected
by torsion springs 250 at two places, the same as the torsion
springs shown in FIGS. 4, 7 and 9, and the frame 248 and the mirror
249 are connected by torsion springs 251 at two places, which are
formed in a similar manner to the torsion springs 250. A line
through the two torsion springs 250 and a line through the two
torsion springs 251 are orthogonal. The base 247, the frame 248,
the mirror 249 and the torsion springs 250 and 251 all comprising
monocrystalline silicon of a thickness of approximately 10 .mu.m
are integrally formed.
[0144] Next, is a description of a production method for the
micro-mirror apparatus shown in FIG. 16 and FIG. 17. At first,
oxygen irons are implanted into the monocrystalline silicon
substrate having a crystal orientation (100), to form a silicon
oxide layer of a uniform depth giving a SIMOX substrate.
Monocrystalline silicon is then grown on the active layer of the
SIMOX substrate by epitaxy to form an SOI layer of approximately 10
.mu.m thickness, thus preparing an SOI substrate. Then, the SOI
layer of the SOI substrate is doped with impurities to give an
impurity concentration of 1.times.10.sup.20, so that the resistance
becomes several thousandths .OMEGA.cm. Next, a reflection coating
comprising three layers of Ti/Pt/Au is formed by lift-off.
Connection portions comprising three layers of Ti/Pt/Au are then
patterned on the rear face of the support substrate of the SOI
substrate using a two face aligner to match with the mirror pattern
on the front face thereof. Next, the SOI layer is etched using ICP
(inductively-coupled plasma), to thereby integrally form the base
247, the frame 248, the mirror 249 and the torsion springs 250 and
251. Then after forming a silicon oxide layer (passivation film) on
the surface with PCVD (plasma CVD) to protect the surface, the
support substrate of the SOI substrate is etched with an etchant of
KOH to form the supports 246.
[0145] Next the protuberance 243 is formed on the central portion
of the monocrystalline silicon having an orientation direction
(100) by anisotropic etching, the protruding portion 253 is formed
by masking the protuberance 243 and etching the monocrystalline
silicon substrate with KOH, the recess 244 is formed around the
protruding portion 253 of the monocrystalline silicon substrate,
the insulating film 245 is formed by thermal oxidation of the
surface of the monocrystalline silicon substrate, and the surface
of the protuberance 243 is made of an insulating material.
Furthermore, the lower electrodes 242 are formed on the insulating
film 245, and a three layer Ti/Pt/Au layer is formed on a
surrounding portion of the monocrystalline silicon substrate, after
which a solder portion comprising AuSn is formed on the Ti/Pt/Au
layer. Next, after aligning the lower substrate 241 and the upper
substrate 252, the connection portions are pressed against the
solder portions and heated to 390.degree. C. so that the solder of
the solder portions is melted to thereby bond the upper substrate
252 to the lower substrate 241.
[0146] In this micro-mirror apparatus, when a large voltage is
symmetrically applied to the lower electrodes 242, then as shown in
FIG. 18, the mirror 249 moves towards the lower substrate 241, that
is in the page downwards direction in FIG. 18. However since the
mirror 249 contacts with the protuberance 243, the mirror 249 and
the protruding portion 253 are not contacted over a large area.
Moreover pull-in does not occur.
[0147] Furthermore, when a large voltage is asymmetrically applied
to the lower electrodes 242, then as shown in FIG. 19, the mirror
249 tilts significantly. However since the edge of the mirror 249
is located inside the recess 244, the edge of the mirror 249 does
not contact with the lower substrate 241.
[0148] For example if a voltage difference of a 95 V difference is
applied to all electrodes on one side of the lower electrodes 242,
the mirror 249 can be made to tilt by only 12.degree.. At this
point in time, the central portion of the mirror 249 contacts with
the protuberance 243, and at the same time the surroundings of the
mirror 249 contact with the edge of the recess 244 on a line.
[0149] Furthermore, even if a voltage of a 200 V difference is
applied to the lower electrodes 242, the mirror 249 only contacts
the protuberance 243, and the contact area thereof is narrow. Hence
pull-in does not occur. In order to demonstrate that pull-in does
not occur, when in addition to applying a voltage of a 200 V
difference to the lower electrodes 242, a voltage of a difference
of several tens of volts is applied asymmetrically to the lower
electrodes 242, the mirror 249 can be made to turn. Then, even if a
voltage of a 200 V difference considerably exceeding the 95 V
applied for the maximum turning angle, is asymmetrically applied to
the lower electrodes 242 to give turning, the contact portion of
the mirror 249 and the lower substrate 241 is only the protuberance
243 and the upper rim of the recess 244, being unchanged from the
case with a voltage difference of 95 V (refer to FIG. 20).
[0150] Furthermore, since the edge of the mirror 249 does not
impact on the lower electrodes 242, there is no damage to the
mirror 249 at all.
[0151] If the same experiment is performed without the
protuberance, since pull-in occurs at a voltage difference of 70 V,
rotation control must be so that rotation is performed with a
voltage difference less than 65 V. Hence the possible rotation
angle for the mirror is limited to .+-.6 degrees. With the present
invention, since movement of the mirror 49 is stopped by the
protuberance 243 and the rim of the recess 244 formed with the
insulating film 245, pull-in does not occur, and also shorting does
not occur.
[0152] As described above, in this micro-mirror apparatus, since
the mirror 249 is not subjected to the occurrence of pull-in, and
hence the electrode of the mirror 249 and the lower electrodes 242
do not short, the electrode of the mirror 249 and the lower
electrodes 242 are not damaged. Furthermore, in the case of an
array mirror, even if the spring constants of the torsion springs
250 and 251 of the respective mirrors 249 are not equal, these can
be put to practical use. Moreover, even if the rotation of the
mirror 249 becomes fairly large, since the mirror 249 does not
contact with the lower substrate 241, damage to the mirror 249 can
be prevented.
[0153] Furthermore, since the insulating film 245 is provided at
least on the side wall upper portion and the opening edge of the
recess 244, then even if for example the rotation of the mirror 249
is very large so that the mirror 249 contacts with the lower
substrate 241, damage to the mirror 249 can be reliably
prevented.
[0154] FIG. 21 is an outline plan view showing a lower substrate of
another micro-mirror apparatus according to the present invention,
while FIG. 22 is a section view on B-B of FIG. 21. As shown in the
figures, a hole 261 which pierces the lower substrate 241 is formed
in the lower substrate 241, and an insulating film 262 is provided
on the surface of the lower substrate 241 including the side wall
upper portion and the opening edge of the hole 261.
[0155] In the above embodiments, the recess 244 and the hole 261
are provided as concavities, however other concavities may be
provided.
[0156] Furthermore, in the abovementioned embodiments, the
protuberance 243 with a surface comprising an insulating material
is provided, however a protuberance made completely from an
insulating material may be provided.
[0157] Moreover, in the abovementioned embodiments, the
protuberance 243 with a height of 5 .mu.m is provided. However if
the distance between the mirror and the protuberance for when a
voltage is not applied to the lower electrode is made even smaller,
contact of the mirror 249 with the lower electrodes 242, that is
shift of the mirror 249 towards the lower electrodes 242 can be
prevented. Hence there is no shift of the optical axis of the light
beam incident on the mirror 249.
[0158] FIG. 23 to FIG. 27 show a more specific other embodiment of
the present invention. The micro-mirror apparatus of this
embodiment, as shown in FIG. 27 has a lower substrate 300 and an
upper substrate 301 which are connected in parallel.
[0159] On the lower substrate 300, as shown in FIG. 23, a convex
portion 302 is formed on an upper face central portion facing a
lower face central portion of a mirror 318. The convex portion 302
has an approximate square shape viewed in plan, and a horizontal
upper step 302b of an approximate square shape is formed in the
center, and a one step lower horizontal lower step face 302a is
formed therearound. A supporting point protuberance 304 is formed
at the center of the upper step face 302b facing the central
portion of the mirror 318, so that a slight space is formed between
the upper step face 302b and the mirror 318. At least the surface
of the supporting point protuberance 304 is formed from an
insulating material.
[0160] Four lower electrodes 306 of respective fan shape are formed
on the upper face center of the lower substrate 300 including the
outer face of the convex portion 302 so as to constitute a circle
concentric with the mirror 318 viewed in plan. The material of the
lower electrode 306 is the same as for the abovementioned
embodiments. The center of the fan of the lower electrodes 306
coincides with the center of the supporting point protuberance 304,
and a space 307 of a constant width is formed between the
respective lower electrodes 306. While not shown in the figure,
beneath the lower electrodes 306 on the lower substrate 300 is
formed respective through holes, and the lower electrodes 306 are
connected to a wiring pattern (omitted from the figure) formed on
the lower face of the lower substrate 300 through these through
holes. By applying a voltage to the lower electrodes 36 and the
mirror 318 through the wiring pattern, the mirror 318 can be
tilted. At this time, if the mirror 318 is displaced downward more
than a predetermined value, the supporting point protuberance 304
contacts with the center of the mirror 318 thus becoming a fulcrum
for tilting the mirror 318.
[0161] The number of lower electrodes 306 in this embodiment is
four, however provided this is three or more, the mirror 318 can be
tilted in optional directions. However, in consideration of ease of
wiring and ease of control, the case with four is preferable.
[0162] On the upper face of the lower substrate 300, at positions
corresponding to two locations on the outer periphery of a ring
portion 314, and two locations on the outer periphery of the mirror
318, is respectively formed concavities 308 and 309. The
concavities 308 are formed at positions 90.degree. apart from the
torsion spring 316 which supports the ring portion 314, while the
concavities 309 are formed at positions 90.degree. apart from the
torsion spring 316 which supports the mirror 318. As a result, it
is possible to adopt a large tilt range for the mirror 318 and the
ring portion 314 centered on the torsion springs 316.
[0163] As shown in FIG. 24, the upper substrate 301 is formed with
the central mirror 318, the ring portion 314 surrounding the outer
periphery of the mirror 318, the base 312 surrounding the outer
periphery of the ring portion 314 and the frame 322 formed on the
outer peripheral edge, all integrally formed from a silicon
monocrystal. The frame 322 is formed via a silicon oxide film 320.
Between the base 312 and the ring portion 314 is connected by the
pair of torsion springs 316 which are 180.degree. apart, and
between the ring portion 314 and the mirror 318 is connected by the
pair of torsion springs 316 at a position 90.degree. apart from the
pair of torsion springs 316. These torsion springs 316 are also
formed integral with the mirror 318, the ring portion 314 and the
base 312.
[0164] FIG. 25 shows details of the torsion spring 316. This figure
shows the torsion spring 316 for connecting between the ring
portion 314 and the base 312. However the torsion spring for
connecting between the ring portion 314 and the mirror 318 is
exactly the same.
[0165] The torsion spring 316 is accommodated inside a concavity
332 formed on the substrate 312, and comprises; a base portion 316a
connected to the base 312, a serpentine portion 316b, a stopper
316c formed on the tip end of the serpentine portion 316b, and a
tip end portion 316d connected to the ring portion 314 extending
from the stopper 316c. The base portion 316a and the tip end
portion 316d extend in the radial direction of the ring portion 314
while the serpentine portion 316b extends in a direction
perpendicular to the radial direction. The tip end portion 316d
passes through a slit 330 formed in the base 312. The width of the
slit 330 is made sufficiently larger than the width of the tip end
portion 316d so as to allow twist of the tip end portion 316d.
[0166] The base portion 316a, the serpentine portion 316 b and the
tip end portion 316d have approximately rectangular mutually
identical cross-sections, and the aspect ratio h/w of the height h
(refer to FIG. 27) to the width w (refer to FIG. 25) is at least
1.8 and preferably 2.5 to 8, and most preferably about 3. By
adopting this aspect ratio, the elasticity of the tip end portion
316d in the twist direction can be reduced while increasing the
support strength of the ring portion 314 in the vertical direction.
Hence the mirror 318 can be tilted with even less electric
power.
[0167] The stopper 316c of this embodiment is an isosceles triangle
prism protruding towards the ring portion 314, and a small
clearance is formed with a pair of position restricting portions
330a formed in the slit 330. The width of the stopper 316c is less
than the width of the slit 330. Therefore, even in the case where
the ring portion 314 is excessively displaced downwards or in the
direction to separate from the torsion spring 316, the stopper 316c
and the position restricting portions 330a come in contact so that
further displacement is restricted. As a result, damage to the
torsion spring 316 can be prevented. Also for the torsion spring
316 on the mirror 318 side a similar action is obtained.
[0168] FIG. 26 shows a modified example of a stopper mechanism. A
stopper 316e of this example is formed as a rectangular
parallelepiped having a face perpendicular to the tip end portion
316d. A pair of position restricting portions 330b protruding
towards the stopper 316e are formed on the opening rim of the slit
330 of the base 312. These position restricting portions 330b are
an approximate semi-circle shape in horizontal section, and a small
space is formed with the stopper 316e. Therefore, even in the case
where the ring portion 314 is excessively displaced downward, or in
the direction to separate from the torsion spring 316, the stopper
316e and the position restricting portions 330b come in contact so
that further displacement is restricted. As a result, damage to the
torsion spring 316 can be prevented. Furthermore, since the ring
portion 314 can slide in an optional direction along the face
perpendicular to the radial direction of the ring portion 314 while
the stopper 316e and the position restricting portion 330b are in
contact, there is minimal restriction to the tilting of the ring
portion 314.
[0169] According to the micro-mirror apparatus of the above
construction, since the stoppers 316c or 316e and the position
restricting portions 330a or 330b which restricts the displacement
amount of the torsion spring 316 are formed, excess displacement of
the ring portion 314 and the mirror 318, and damage to the torsion
spring 316 can be prevented.
[0170] Furthermore, by forming the convex portion 302 having the
lower face 302a and the upper face 302b, to make the mirror center
side of the lower electrodes 306 approach the mirror 318, the
mirror 318 can be tilted with a comparatively low voltage.
[0171] Moreover, by forming the concavities 308 and 309 in the
lower substrate 300, the tilt range of the ring portion 314 and the
mirror 318 can be extended while keeping down the thickness of the
overall device. Moreover, the concavities 308 and 309 may penetrate
the lower substrate 300.
[0172] FIG. 28 shows another embodiment of the present invention.
In this embodiment, a convex portion 340 formed on the center
portion of the lower substrate 300 is a conical shape, and the
lower electrodes 306 are also formed on an outer face 340a thereof.
Other construction is the same as for the embodiments of FIG. 23 to
FIG. 27.
[0173] Furthermore, FIG. 33 shows another embodiment modified from
the embodiment of FIGS. 23 to 27. In this embodiment, the upper
part (that is, the center part) of the convex portion 302 including
the supporting point protuberance 304 and the horizontal upper step
302b is covered with an insulating layer, and the four electrodes
306 are formed on the horizontal lower step face 302a and an area
below the horizontal lower step face 302a. By forming the lower
electrodes 306 only on a ring shaped area outside the upper
(center) part of the convex portion 302, it becomes easy to
precisely control the tilting angle of the mirror 318 in comparison
with the embodiment shown in FIGS. 23 to 27.
EXAMPLES
[0174] Experiment 1
[0175] Four examples of the present invention were manufactured.
Each of these examples has a common structure shown in FIGS. 23 to
25, and 27, and common sizes thereof are shown in FIG. 30. The
aspect ratios (H/W) of the cross-section of the torsion springs 316
in the examples were 0.2, 1.2, 2.0, and 3.0, respectively. Using
these examples, the mirror tilting angles at applied voltage of 50V
and the pull-in voltages were respectively measured. The voltage
was applied to all of the electrodes on one side of the mirror. The
result is shown in FIG. 29. As shown in FIG. 29, although the
sensibility of each examples are similar, the pull-in voltage could
be improved by increasing the aspect ratio of the torsion
springs.
[0176] Experiment 2
[0177] Next, a comparative example shown in FIG. 31 was
manufactured so as to have an aspect ratio (H/W) of 3.0. This
comparative example did not comprise the convex portion 302, and
the other structures are the same as those of the example of FIG.
30 having an aspect ratio of 3.0.
[0178] Furthermore, a fifth example, which has the same structure
as that shown in FIG. 33 and the same sizes shown in FIG. 30, was
manufactured.
[0179] By applying various voltages to these three micro-mirror
apparatuses, tilting angles of the mirrors were measured. The
results are shown in FIG. 32. It is clear from this graph that the
tilting angle could be increased by providing the convex portion
302 as shown in FIGS. 30 and 33. The example of FIG. 30 tilted the
mirror at voltages lower than those of the examples of FIGS. 31 and
33. However, the applicants found that the example of FIG. 33 was
easy to control at the tilting angle over 4 degrees as shown in
FIG. 32.
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