U.S. patent application number 09/804239 was filed with the patent office on 2002-03-14 for microwave semiconductor device and the manufacturing method thereof for improve heat discharge and electric property.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. Invention is credited to Hirata, Seiichi, Takagi, Kazutaka.
Application Number | 20020031859 09/804239 |
Document ID | / |
Family ID | 18602949 |
Filed Date | 2002-03-14 |
United States Patent
Application |
20020031859 |
Kind Code |
A1 |
Hirata, Seiichi ; et
al. |
March 14, 2002 |
Microwave semiconductor device and the manufacturing method thereof
for improve heat discharge and electric property
Abstract
In this disclosure, the semiconductor is directly mounted on the
substrate plate of a package. According to this configuration, heat
generated by the semiconductor chip is directly discharged, an
excellent heat discharge property is realized. Moreover, the
circuit is securely grounded and an excellent electric property is
obtained.
Inventors: |
Hirata, Seiichi;
(Kanagawa-ken, JP) ; Takagi, Kazutaka;
(Kanagawa-ken, JP) |
Correspondence
Address: |
OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC
FOURTH FLOOR
1755 JEFFERSON DAVIS HIGHWAY
ARLINGTON
VA
22202
US
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
72 Horikawa-cho, Saiwai-ku
Kawasaki-shi
JP
|
Family ID: |
18602949 |
Appl. No.: |
09/804239 |
Filed: |
March 13, 2001 |
Current U.S.
Class: |
438/108 ;
257/E21.705; 257/E23.104; 257/E25.012 |
Current CPC
Class: |
H01L 25/50 20130101;
H01L 2924/1306 20130101; H01L 2924/16152 20130101; H01L 23/66
20130101; H01L 24/97 20130101; H01L 2224/05599 20130101; H01L
2224/85399 20130101; H01L 2924/1306 20130101; H01L 2924/14
20130101; H01L 2924/15153 20130101; H01L 2924/00014 20130101; H01L
2924/01005 20130101; H01L 2924/19043 20130101; H01L 2224/05599
20130101; H01L 24/48 20130101; H01L 2924/01033 20130101; H01L
2924/01047 20130101; H01L 2924/09701 20130101; H01L 2924/19107
20130101; H01L 2224/48091 20130101; H01L 2924/00014 20130101; H01L
25/0655 20130101; H01L 2924/01078 20130101; H01L 2224/45015
20130101; H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L
2924/00 20130101; H01L 2224/45099 20130101; H01L 2924/207 20130101;
H01L 2924/00014 20130101; H01L 2224/85399 20130101; H01L 2224/16
20130101; H01L 2224/48091 20130101; H01L 2924/01004 20130101; H01L
2924/01006 20130101; H01L 23/3675 20130101; H01L 2924/10329
20130101; H01L 2924/01029 20130101; H01L 2924/00014 20130101; H01L
2924/15165 20130101; H01L 2924/01082 20130101 |
Class at
Publication: |
438/108 |
International
Class: |
H01L 021/48 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 27, 2000 |
JP |
2000-86847 |
Claims
What is claimed is;
1. A microwave semiconductor device comprising; a semiconductor
chip in which an active element flip-chip connected to other
circuit elements was formed on the surface side of a semiconductor
substrate; and a substrate plate to which the reverse face side of
said semiconductor substrate of said semiconductor chip was
joined.
2. A microwave semiconductor device comprising; a semiconductor
chip in which an active element was formed on the surface side of a
semiconductor substrate; circuit parts in which a circuit element
electrically connected to said active element by flip-chip
connection was formed on a predetermined circuit substrate; and a
substrate plate to which the reverse face side of said
semiconductor substrate of said semiconductor chip was joined.
3. The microwave semiconductor device according to claim 1, wherein
a region where an active element and a circuit element are
flip-chip connected is sealed with an insulating material.
4. The microwave semiconductor device according to claim 2, wherein
a region where an active element and a circuit element are
flip-chip connected is sealed with an insulating material.
5. The microwave semiconductor device according to claim 1, wherein
a circuit element is a passive element.
6. The microwave semiconductor device according to claim 2, wherein
a circuit element is a passive element.
7. The microwave semiconductor device according to claim 2, wherein
a predetermined circuit substrate is a dielectric substrate.
8. The microwave semiconductor device according to claim 2, wherein
a predetermined circuit substrate is consisted of alumina or glass
ceramics.
9. A method for manufacturing microwave semiconductor device
comprising the steps of: fabricating a semiconductor chip forming
an active element on a semiconductor substrate; forming a bump on
said semiconductor chip; flip-chip connecting said semiconductor
chip and circuit parts forming a circuit element on a predetermined
substrate by utilizing said bump; and joining said semiconductor
chip and said circuit parts which are flip-chip connected to a
substrate plate, provided that a side of said semiconductor chip
should be joined to a substrate plate.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] The subject application is related to subject matter
disclosed in the Japanese Patent Application No.Tokugan2000-086847
filed in Mar. 27, 2000 in Japan, to which the subject application
claims priority under the Paris Convention and which is
incorporated by reference herein.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a microwave semiconductor
device in which a semiconductor chip, whose amplifying element for
a microwave circuit or the like is formed on the semiconductor
substrate, is mounted on a substrate plate such as a package and a
method thereof.
[0004] 2. Description of the Related Art
[0005] A microwave semiconductor device is, for example, consisted
of a device in which semiconductor chip, whose amplifying element
such as a field effect transistor, a microstrip line, a resistor
and the like are formed on a GaAs semiconductor substrate, is
mounted on a substrate plate of a package.
[0006] When a semiconductor chip is mounted on a substrate plate,
for example, what is called a flip-chip connection, by which a bump
projecting on a semiconductor chip is formed by electro-plating or
the like and the semiconductor chip and the substrate plate are
connected by the bump, is employed.
[0007] Now, as for a conventional microwave semiconductor device,
in order to discharge heat that a semiconductor chip generates, a
heat sink is provided on the reverse face of a semiconductor chip,
or a heat-discharging fan is provided directly or via a metal
plate.
[0008] According to such a structure, if it is a low heating value,
heat discharging can be performed using a wind fan and the like.
However, if it is a high heating value, there exists a problem that
sufficient heat discharging is not performed. Moreover, there
exists another problem that grounding of a circuit is not
sufficiently performed and electric properties are
deteriorated.
SUMMARY OF THE INVENTION
[0009] An object of the present invention is to solve the defects
described above and provide a microwave semiconductor device which
is excellent in a heat discharge property and an electric
property.
[0010] Moreover, another object of the present invention is to
solve the defects described above and provide a method of
fabricating a microwave semiconductor device which is excellent in
a heat discharge property and an electric property.
[0011] A microwave semiconductor device of the present invention
has a semiconductor chip in which an active element flip-chip
connected with the other circuit elements is formed on the surface
side of a semiconductor substrate and a substrate plate on which
the reverse face side of a semiconductor substrate of this
semiconductor chip is joined.
[0012] Moreover, a method of fabricating a microwave semiconductor
device of the present invention comprises the first step of
fabricating a semiconductor chip forming an active element on a
semiconductor substrate, the second step of forming a bump on this
semiconductor chip, the third step of flip-chip connecting a
semiconductor chip and a circuit part in which a circuit element is
formed on the predetermined circuit substrate by utilizing a bump,
and the fourth step of the semiconductor chip and the circuit part
flip-chip connected are joined to a substrate plate, provided that
the side of semiconductor chip should be joined to the substrate
plate.
[0013] Other and further objects and features of the present
invention will become obvious upon understanding of the
Illustrative embodiments about to be described in connection with
the accompanying drawings or will be Indicated in the appended
claims, and various advantages not referred to herein will occur to
one skilled in the art upon employing of the invention in
practice.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 is a flow chart for illustrating the embodiment of
the present invention, showing a step through the step of flip-chip
connecting a semiconductor chip and a circuit element on a
dielectric substrate:
[0015] FIG. 2 is a flow chart for illustrating the embodiment of
the present invention, showing a step of mounting a semiconductor
part in which a semiconductor chip and a circuit element on a
dielectric substrate are flip-chip connected within a package;
and
[0016] FIG. 3 is a flow chart for illustrating the embodiment of
the present invention, showing a step of sealing a region where a
semiconductor chip and a circuit element on a dielectric substrate
are flip-chip connected.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0017] Various embodiments of the present invention will be
described with reference to the accompanying drawings. It is to be
noted that the same or similar reference numerals are applied to
the same or similar parts and elements throughout the drawings, and
the description of the same or similar parts and elements will be
omitted or simplified.
[0018] Hereinafter, a method of fabricating a microwave
semiconductor device of the embodiment of the present invention
will be described in reference to FIG. 1
[0019] In the embodiment of the present invention, the
semiconductor chip 11 has a configuration in which, as shown in
FIG. 1(a), an active element such as a field effect transistor and
the like are formed on the substrate 12 such as GaAs and the like.
Moreover, on an electrode surface on the semiconductor chip 11, the
plural number of bumps 13 projecting to an information is formed by
electroplating and the like.
[0020] When a microwave semiconductor device is fabricated by
utilizing the above-described semiconductor chip 11, first, as
shown in FIG. 1(b). after the semiconductor chips 11 are removed
one by one, as shown in FIG. 1(c), these are divided into, for
example, groups A-C of the semiconductor chips 11 which are
consisted of 3 pieces of the semiconductor chips and configures a
common microwave.
[0021] Next, as shown in FIG. 1(d), the respective groups of A-C
consisted of three pieces of the semiconductor chips 11 are in turn
connected by the bump 13 at the predetermined positions in the
plural number of regions 141 on the dielectric substrate 14 where a
microstrip line, a passive element such as a resistor and the like
are formed.
[0022] Now, FIG. 1(e) shows a drawing of depicting one region
extracted from the dielectric substrate 34. As apparent from FIG.
1(e), it is understood that the microstrip line 15, the resistor 16
and the like are formed on the dielectric substrate 14, for
example, three pieces of the semiconductor chips 11 are connected
to the microstrip line 15. Moreover, FIG. 1(f) shows a sectional
view of FIG. 1(e). As apparent from FIG. 1(f), the semiconductor
chips 11 are connected by the bumps 13.
[0023] Next, referring to FIG. 2, a method of mounting
semiconductor parts, which connect the semiconductor chip 11 on the
dielectric substrate 14, on a substrate plate of a package will be
described below.
[0024] As shown in FIG. 2(a), the package 21 is consisted of
Metallic substrate plate 22, the side wall 23 and the like, on the
side wall 23 portion, the lead terminal for input 24 and the lead
terminal for output 25 which electrically connect the inside and
outside of the side wall 23 are provided. Moreover, the
semiconductor parts 26 which connects the semiconductor chip 11 on
the dielectric substrate 14 is placed upward the substrate plate 22
so that the semiconductor chip 11 side faces toward the substrate
plate 22 side. Moreover, on the substrate plate 22, the silver
paste 22 is disposed.
[0025] Next, as shown in FIG. 2(b), the semiconductor parts 26 and
the substrate plate 22 are fixed and adhered by silver paste 27. In
this case, a solder can be used Instead of the silver paste 27.
[0026] Next, as shown in FIG. 2(c) , a bonding between the
semiconductor parts 26 and the lead terminal for input 24, and a
bonding between the semiconductor parts 26 and the lead terminal
for output 25 are performed. At this moment, the wire 28 Is
electrically connected to a circuit formed on the semiconductor
chip 11 through a through hole (not shown) or a terminal end-via
hole, provided on the dielectric substrate 14.
[0027] Next, as shown in FIG. 2(d), the cover 29 consisted of
ceramic and the like Is disposed on the open portion of the side
wall 23, a space within the package 21 which has accommodated the
semiconductor parts 26 is sealed.
[0028] According to the semiconductor chips are directly mounted on
the substrate plate of the package. In this case, since the heat
generated by the semiconductor chips is directly discharged, an
excellent heat discharge property is obtained. Therefore, a
semiconductor chip having a higher heating value can be mounted on.
Moreover, since the semiconductor chip and the substrate plate are
directly contacted with each other, the circuit is securely
grounded and an excellent electric property is realized.
[0029] Moreover, since it is configured so that the semiconductor
chips are connected to the dielectric substrate on which a
microstrip line and a passive element such as a resistor are
formed, a microstrip line and a passive element such as a resistor
can be formed on a lower cost dielectric substrate, and a low
priced microwave semiconductor device can be realized.
OTHER EMBODIMENTS
[0030] Although the invention achieved by the inventors has been
described through the above embodiments, it should not be
understood that a description and drawings which are part of this
disclosure restrict the present invention. That is, various
modified embodiments thereof and operating technologies will be
evident to those skilled in the art from this disclosure.
[0031] For example, FIG. 3(a) shows the state where the respective
semiconductor chips 11 are connected by the bumps 13 in the plural
number of regions 141 on the dielectric substrate 14 on which a
microstrip line and a passive element such as a resistor in the
steps from the first step to the step of FIG. 1(d) described in the
embodiment of FIG. 1.
[0032] In the embodiment of the present invention, as shown in FIG.
3(b), subsequently, the region where the semiconductor chips 11 and
a circuit element on the dielectric substrate 14 are flip-chip
connected is sealed by the insulating material 31 such as a resin
using the potting technology . According to this configuration, the
mechanical strength of the region where the semiconductor chips and
the dielectric substrate are flip-chip connected is reinforced by
the sealing with the insulating material 31. Therefore, after the
dielectric substrate, the semiconductor chip and the package are
joined each other, a crack or the like of the semiconductor chip
due to the stress generated at joining portion by the difference of
thermal expansion of respective these members is prevented.
[0033] It should be noted that in the case of the above-described
embodiment of the present invention, as materials used for the
dielectric substrate on which a microstrip line and such as a
resistor and the like are formed, alumina, glass ceramics and the
like are used. However, in the case where the frequency to be dealt
with is high, glass ceramics obtains more excellent properties than
those of the others.
[0034] Moreover, in the above-described embodiment of the present
invention, as a semiconductor substrate, GaAs substrate is used.
Moreover, a field effect transistor is formed on the semiconductor
substrate, and a microstrip line and a resistor and the like are
formed on the dielectric substrate. However, these are only
examples, and the other semiconductor elements and circuit elements
can be also formed on dielectric substrates employing the
semiconductor substrate of other materials.
[0035] Moreover, as materials for a substrate plate in the
above-described embodiment of the present invention, it is
preferable to employ Cu, CuMo, CuTn and the like . thereby being
capable of realizing a more excellent heat discharge effect.
[0036] As described above, it should be understood that the present
Invention includes various embodiments not described in this
specification. Therefore, the present invention is limited by only
specific matters relating to claims of the invention, which are
introduced appropriately from the disclosure of the invention.
* * * * *