U.S. patent application number 09/964625 was filed with the patent office on 2002-03-07 for target and process for its production, and method for forming a film having a high refractive index.
This patent application is currently assigned to Asahi Glass Company Ltd.. Invention is credited to Hayashi, Atsushi, Kida, Otojiro, Mitsui, Akira, Osaki, Hisashi, Oyama, Takuji, Sasaki, Kenichi, Suzuki, Eri.
Application Number | 20020027817 09/964625 |
Document ID | / |
Family ID | 16666330 |
Filed Date | 2002-03-07 |
United States Patent
Application |
20020027817 |
Kind Code |
A1 |
Kida, Otojiro ; et
al. |
March 7, 2002 |
Target and process for its production, and method for forming a
film having a high refractive index
Abstract
A sputtering target comprising a substrate and a target material
formed on the substrate, wherein the target material comprises a
metal oxide of the chemical formula MO.sub.x as the main component,
wherein MO.sub.x is a metal oxide which is deficient in oxygen as
compared with the stoichiometric composition, and M is at least one
metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr
and Hf, a process for its production, and a method for forming a
film having a high refractive index.
Inventors: |
Kida, Otojiro;
(Yokohama-shi, JP) ; Mitsui, Akira; (Yokohama-shi,
JP) ; Suzuki, Eri; (Yokohama-shi, JP) ; Osaki,
Hisashi; (Yokohama-shi, JP) ; Hayashi, Atsushi;
(Yokohama-shi, JP) ; Oyama, Takuji; (Yokohama-shi,
JP) ; Sasaki, Kenichi; (Yokohama-shi, JP) |
Correspondence
Address: |
OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC
FOURTH FLOOR
1755 JEFFERSON DAVIS HIGHWAY
ARLINGTON
VA
22202
US
|
Assignee: |
Asahi Glass Company Ltd.
Chiyoda-ku
JP
|
Family ID: |
16666330 |
Appl. No.: |
09/964625 |
Filed: |
September 28, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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09964625 |
Sep 28, 2001 |
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09729102 |
Dec 5, 2000 |
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09729102 |
Dec 5, 2000 |
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09011749 |
Mar 12, 1998 |
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6193856 |
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09011749 |
Mar 12, 1998 |
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PCT/JP96/00767 |
Mar 25, 1996 |
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Current U.S.
Class: |
365/200 |
Current CPC
Class: |
C23C 14/083 20130101;
C23C 4/11 20160101; C23C 14/3414 20130101; C23C 4/02 20130101 |
Class at
Publication: |
365/200 |
International
Class: |
G11C 007/00 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 23, 1995 |
JP |
7/215074 |
Claims
1. A sputtering target comprising a substrate and a target material
formed on the substrate, wherein the target material comprises a
metal oxide of the chemical formula MO.sub.x as the main component,
wherein MO.sub.x is a metal oxide which is deficient in oxygen as
compared with the stoichiometric composition, and M is at least one
metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr
and Hf.
2. The sputtering target according to claim 1, wherein in said
MO.sub.x, M is Nb and/or Ta, and x is within a range of
2<.times.<2.5.
3. The sputtering target according to claim 1, wherein in said
MO.sub.x, M is Mo and/or W, and x is within a range from
2<.times.<3.
4. The sputtering target according to claim 1, wherein in said
MO.sub.x, M is at least one metal selected form the group
consisting of Ti, Zr and Hf, and x is within a range of
1<.times.<2.
5. The sputtering target according to any one of claims 1 to 4,
wherein the target material has a resistivity of at most 10 .OMEGA.
cm at room temperature.
6. A process for producing a sputtering target, which comprises
forming an undercoat made of a metal or alloy on a substrate, and
forming a ceramic layer as a target material on the undercoat,
wherein the ceramic layer as a target material is formed by plasma
spraying wherein a ceramic powder which is made in a semi-molten
state in a high temperature plasma gas in a reducing atmosphere, is
transported and deposited onto the undercoat by the plasma gas,
and, as the target material, a target material comprising a metal
oxide of the chemical formula MO.sub.x as the main component, is
used, wherein MO.sub.x is a metal oxide which is deficient in
oxygen as compared with the stoichiometric composition, and M is at
least one metal selected from the group consisting of Ti, Nb, Ta,
Mo, W, Zr and Hf.
7. The process for producing a sputtering target according to claim
6, wherein, as the undercoat, a layer having a thermal expansion
coefficient intermediate between the thermal expansion coefficient
of the ceramic layer and the thermal expansion coefficient of the
substrate, and/or a layer having a thermal expansion coefficient
close to the thermal expansion coefficient of the ceramic layer, is
used.
8. The process for producing a sputtering target according to claim
6, wherein the plasma spraying is water plasma spraying.
9. The process for producing a sputtering target according to claim
6, wherein a cylindrical substrate is used as the substrate.
10. The process for producing a sputtering target according to
claim 6, wherein a surface-roughened substrate is used as the
substrate.
11. A method for forming a film having a high refractive index by
sputtering, wherein, as a sputtering target, the sputtering target
as defined in any one of claims 1 to 5 is used.
Description
TECHNICAL FIELD
[0001] The present invention relates to a target to be used for
forming a transparent thin oxide film having a high refractive
index by direct current (DC) sputtering, and a process for its
production, and a method for forming a film having a high
refractive index by using such a target.
BACKGROUND ART
[0002] Optical applications of thin oxide films start from single
layer type heat reflecting glasses and antireflection films and
extend to various fields including, for example, multi-layer type
antireflection coatings, reflection enhancing coatings,
interference filters and polarizing films, which are designed to
permit lights having certain specific wavelengths to reflect or
pass selectively therethrough. Further, a study has been made to
insert a transparent electroconductive film or a film of e.g. metal
or electroconductive ceramics having various functions such as
electroconductivity and heat reflection properties as a part of a
multi-layer film to obtain a multi-layer film having a function
such as an antistatic, heat reflecting or electromagnetic wave
shielding function provided.
[0003] The spectral characteristics of a multi-layer film are
optically designed by using refractive indexes n and thicknesses of
the respective layers, as parameters, and it is common to employ a
combination of a high refractive index film and a low refractive
index film. To realize excellent optical properties, the larger the
difference in the refractive index between the high refractive
index film and the low refractive index film, the better. As such a
high refractive index film, titanium dioxide (n=2.4) cerium dioxide
(n=2.3), zirconium dioxide (n=2.2), niobium pentoxide (n=2.1),
tantalum pentoxide (n=2.1) or tungsten trioxide (n=2.0) is, for
example, known. Further, as a low refractive index film, silicon
dioxide (n=1.46) or magnesium fluoride (n=1.38) is, for example,
known.
[0004] Such films can be formed, for example, by a vacuum vapor
deposition method or a coating method. However, by such a
film-forming method, it is difficult to form a uniform film over a
substrate having a large area, and when a substrate having a large
area, such as a glass for buildings or automobiles, CRT, or a flat
display, is required, sputtering is used in many cases. Among
various sputtering methods, DC sputtering utilizing direct current
discharge is most suitable for forming a film over a large
area.
[0005] When a high refractive index film is to be formed by DC
sputtering, it is common at present to employ so-called reactive
sputtering wherein a metallic target having electroconductivity is
subjected to sputtering in an atmosphere containing oxygen.
However, there has been a problem that the film-forming speed of a
thin film obtainable by this method is very slow, whereby the
productivity is poor, and the cost tends to be high.
[0006] To solve such a problem, it has been proposed to use an
oxide ceramic (sintered body) as a target. However, oxide ceramic
usually has no electroconductivity, whereby DC sputtering has been
difficult.
[0007] Further, recently, a sputtering target is required to have a
complex shape, and a highly efficient planer target having the
target thickness partially changed, is required. By a method for
obtaining a sintered body by a common sintering method, it is
difficult to produce a target having a complex structure or various
shapes, and such a target is prepared by a long process including
steps of mixing starting materials, sintering, processing and
bonding, whereby substantial jigs are required for its
production.
[0008] In sputtering over a glass sheet with a large area for
buildings, the film-forming speed is increased by applying a high
power for sputtering to increase the productivity, whereby cooling
of the target tends to limit the film-forming speed, and further
troubles such as cracking of the target, peeling, etc, are likely
to occur.
[0009] A new magnetron type rotary cathode is known wherein such
drawbacks have been overcome (JP-A-58-500174). This is of a type
wherein a magnetic field generating means is provided inside of a
cylindrical target, and sputtering is carried out while rotating
the target and cooling the target from inside. By the use of such a
cylindrical target, a large power per unit area can be applied as
compared with a planer type target, whereby film formation at a
high speed is said to be possible.
[0010] Preparation of a target material on a cylindrical target
holder has heretofore been commonly carried out when the target
material is a metal or alloy. In the case of a metal target,
multi-layer film coatings of e.g. its oxide, nitride, carbide, etc.
are formed in various sputtering atmospheres. However, it has had
drawbacks that the coating films are likely to be damaged by
different types of atmospheres, whereby films having desired
compositions can hardly be obtainable, and, in a case of a low
melting metal target, the target is likely to undergo melting when
the power applied is excessive. Under these circumstances, a
ceramic target material has been desired. A method has been
proposed in which a ceramic sintered body is formed into a
cylindrical shape and bonded to a substrate by means of indium
metal. However, the method is difficult and costly.
[0011] JP-A-60-181270 proposes a process for producing a ceramic
sputtering target by spraying. However, the process has had
problems that the sprayed coating can not be made sufficiently
thick, as the difference in thermal expansion between the ceramics
and the substrate metal is large, and the adhesion tends to
deteriorate by thermal shock during its use, thus leading to
peeling.
[0012] JP-A-62-161945 proposes a process for producing a
non-electroconductive ceramic sputtering target made of various
oxides by water plasma spraying. This target is a target for radio
frequency (RF) sputtering, and the target itself is an insulating
material. Further, this target has had drawbacks that, unless some
measures such an undercoating is taken, it is likely to undergo
cracking or peeling as the temperature rises during sputtering,
whereby film formation under a stabilized condition tends to be
difficult. Further, there has been a drawback such that the film
forming speed is very slow.
[0013] It is an object of the present invention to provide an
electroconductive sputtering target which can be formed into any
desired shape and which is capable of forming a high refractive
index film at a high speed by DC sputtering, a process for its
production, and a method for forming a high refractive index film
using such a target.
DISCLOSURE OF THE INVENTION
[0014] The present invention provides a sputtering target
comprising a substrate and a target material formed on the
substrate, wherein the target material comprises a metal oxide of
the chemical formula MO.sub.x as the main component, wherein
MO.sub.x is a metal oxide which is deficient in oxygen as compared
with the stoichiometric composition, and M is at least one metal
selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and
Hf.
[0015] The target of the present invention has electroconductivity
and thus is useful for DC sputtering, whereby a uniform,
transparent high refractive index film can be formed at a high
speed over a large area. The target of the present invention is
useful also for RF sputtering.
[0016] In a case where M in MO.sub.x of the target of the present
invention is Nb and/or Ta, x is preferably within a range of
2<.times.<2.5. This means that if x is 2.5, the target is
electrically insulating, as it is in a completely oxidized state,
whereby DC sputtering is not feasible, such been undesirable. On
the other hand, if x is 2 or lower, such an oxide is chemically
instable and, as such, is not desirable as a target. When NbO.sub.x
is used, a high film-forming speed can be realized, and when
TaO.sub.x is used, it is possible to form a film having a high
corrosion resistance and high scratch resistance.
[0017] For the same reason as mentioned above, when M in MO.sub.x
of the target of the present invention is Mo and/or W, x is
preferably within a range of 2<.times.<3, and when M in
MO.sub.x in the target of the present invention is at least one
metal selected from the group consisting of Ti, Zr and Hf, x is
preferably within a range of 1<.times.<2. Especially when
TiO.sub.x is used, it is possible to realize formation of a film
having a very high refractive index.
[0018] The target of the present invention has electrical
conductivity and thus is useful for film formation by means of DC
sputtering, whereby a uniform, transparent high refractive index
film can be formed at a high speed over a large area. The
resistivity at room temperature of the target of the present
invention is preferably at most 10 .OMEGA.cm, more preferably at
most 1 .OMEGA.cm, so that discharge during sputtering can be
carried out under a stabilized condition. If the resistivity
exceeds 10 .OMEGA.cm, discharge tends to be hardly stabilized.
[0019] For the target of the present invention, a composite oxide
MO.sub.x employing two or more metals M, may be used so that the
target will have the above mentioned characteristics
simultaneously.
[0020] With the target of the present invention, the properties of
the film such as the refractive index, and mechanical and chemical
properties, can be changed while maintaining the high speed film
formation, by adding an oxide of a metal other than metal M in
MO.sub.x, as an additive. As such a metal oxide, an oxide of at
least one metal selected from the group consisting of Cr, Ce, Y,
Si, Al and B, may be mentioned. For example, Cr is capable of
imparting corrosion resistance, and Ce is capable of imparting
ultraviolet ray-shielding properties.
[0021] The target of the present invention can be prepared, for
example, as follows.
[0022] In a case of a NbO.sub.x target, a Nb.sub.2O.sub.5 powder is
subjected to hot-pressing (high temperature and high pressure
pressing) for sintering to obtain a target of the present
invention. In such a case, the particle size of the powder is
preferably from 0.05 to 40 .mu.m. It is important that the
atmosphere for the hot-pressing is a non-oxidizing atmosphere, and
it is preferred to use argon or nitrogen, since it is thereby easy
to adjust the oxygen content in the target. It is also possible to
add hydrogen. The hot-pressing conditions are not particularly
limited, but the temperature is preferably from 800 to
1,400.degree. C., and the pressure is preferably from 50 to 100
kg/cm.sup.2.
[0023] The present invention also provides a process for producing
a sputtering target, which comprises forming an undercoat made of a
metal or alloy on a substrate, and forming a ceramic layer as a
target material on the undercoat, wherein the ceramic layer as a
target material (hereinafter referred to simply as the ceramic
layer) is formed by plasma spraying wherein a ceramic powder for
spraying (hereinafter referred to simply as the ceramic powder)
which is made in a semi-molten state in a high temperature plasma
gas in a reducing atmosphere, is transported and deposited onto the
undercoat by the plasma gas, and, as the target material, a target
material comprising a metal oxide of the chemical formula MO.sub.x
as the main component, is used, wherein MO.sub.x is a metal oxide
which is deficient in oxygen as compared with the stoichiometric
composition, and M is at least one metal selected from the group
consisting of Ti, Nb, Ta, Mo, W, Zr and Hf.
[0024] In the present invention, the ceramic powder is made in a
semi-molten state by means of a plasma spraying apparatus and
deposited on a substrate, so that a ceramic layer for a sputtering
target is directly formed.
[0025] Accordingly, the process does not require a molding step, a
sintering step, a processing step to form a complex structure or
shape, or a bonding step. In a case of a complicated compound which
is not readily available in the form of a ceramic powder, such a
compound may be chemically synthesized or may be prepared by using
a solid phase reaction. The ceramic powder may be a pulverized or
granulated, and further classified, so that it is adjusted to have
a readily flowable particle size suitable for spraying.
[0026] The ceramic powder to be used in the present invention can
be prepared by the following method. Namely, a TiO.sub.2 powder
having an average particle size of at most 10 .mu.m and a powder of
a metal oxide other than TiO.sub.2 having an average particle size
of at most 10 .mu.m, are weighed in predetermined amounts and mixed
in a wet system for at least 3 hours in a ball mill using a binder
such as polyvinyl alcohol (PVA) and water as a dispersing medium,
to obtain a slurry, which is then dried by a spray drier to obtain
a powder having a particle size of from 10 to 100 .mu.m, preferably
from 20 to 100 .mu.m.
[0027] In another method, ethanol is used as the above mentioned
dispersing medium, and a Nb.sub.2O.sub.5 powder and a TiO.sub.2
powder are mixed together with ethanol in a wet system for at least
one hour by means of a ball mill in the same manner as described
above, and the mixture is dried by an evaporator and then calcined
in an inert atmosphere at a temperature of from 1,000 to
1,200.degree. C., followed by classification to obtain a powder
having a particle size of from 10 to 100 .mu.m, preferably from 20
to 100 .mu.m. The composition of this powder is reduced by
calcination, but is further reduced during the subsequent plasma
spraying in a reducing atmosphere.
[0028] If the particle size exceeds 100 .mu.m, such a ceramic
powder tends to be hardly made in a semi-molten state in a high
temperature plasma gas, and if it is smaller than 10 .mu.m, such a
powder is likely to be dispersed in the high temperature plasma gas
and thus tends to be hardly deposited on the substrate.
[0029] For the substrate, various metals or alloys, such as
stainless steel, copper or titanium, may be used. Prior to the
plasma spraying of a ceramic powder for the target material, it is
preferred to roughen the surface of the substrate, for example, by
sand blasting by means of abrasive grains made of Al.sub.2O.sub.3
or SiC in order to improve the adhesion. Otherwise, it is also
preferred to process such a substrate surface to form a V-groove,
followed by sand blasting by means of abrasive grains made of
Al.sub.2O.sub.3 or SiC, in order to improve the adhesion.
[0030] After roughening the substrate surface, an undercoat made of
a metal or alloy may be formed in order to reduce the difference in
the thermal expansion between the target material to be sprayed and
the substrate and to improve the adhesion so as to be durable
against peeling by mechanical and thermal impacts.
[0031] As such an undercoat, a layer (hereinafter referred to as
layer A) having a thermal expansion coefficient intermediate
between the substrate and the target material, and/or a layer
(hereinafter referred to as layer B) having a thermal expansion
coefficient close to the target material, may be used. It is
particularly effective to form both layers to have a structure of
the substrate/layer A/layer B/ceramic layer. It is preferred to
form the undercoat also by plasma spraying.
[0032] Even when the undercoat is made solely by layer A or layer
B, the adhesive force of the ceramic layer to the substrate can be
improved, since the metal or alloy is not brittle and has high
elasticity. The thermal expansion coefficient of layer B is most
suitably within a range of .+-.2.times.10.sup.-6/.degree. C. of the
thermal expansion coefficient of the ceramic layer.
[0033] As the material for the undercoat, an electroconductive
powder of e.g. Mo, Ti, Ni, Nb, Ta, W, Ni-Al, Ni-Cr, Ni-Cr-Al,
Ni-Cr-Al-Y or Ni-Co-Cr-Al-Y may be employed. The thickness of the
undercoat is preferably from 30 to 100 .mu.m.
[0034] It is necessary to change the material for the undercoat
depending upon the thermal expansion coefficient of the ceramic
layer. The thermal expansion coefficient of e.g. copper or
stainless steel which is useful as a substrate, is from
17.times.10.sup.-6 to 18.times.10.sup.-6/.degree. C., and the
thermal expansion coefficient of titanium is
8.8.times.10.sup.-6/.degree. C.
[0035] For example, for the ceramic layer (the thermal expansion
coefficient: 6.times.10.sup.-6 to 9.times.10.sup.-6/.degree. C.) in
the present invention, the preferred thermal expansion coefficient
of the undercoat layer A is from 12.times.10.sup.-6 to
15.times.10.sup.-6/.degre- e. C., and as such a material, Ni,
Ni-Al, Ni-Cr, Ni-Cr-Al, Ni-Cr-Al-Y or Ni-Co-Cr-Al-Y, may, for
example, be mentioned.
[0036] Further, the preferred thermal expansion coefficient of the
undercoat layer B is from 4.times.10.sup.-6 to
11.times.10.sup.-6/.degree- . C., and as such a material, Mo, Nb,
Ta, W or Ti, may, for example, be mentioned.
[0037] Further, the adhesion can be further improved by providing
an undercoat layer having the composition gradually changed from a
material having a thermal expansion coefficient close to the target
material to a material having a thermal expansion coefficient close
to the substrate, selected among such undercoat materials. Further,
when the substrate is made of titanium, the undercoat may be made
solely of layer B, since the thermal expansion coefficient is close
thereto.
[0038] On such an undercoat, a ceramic powder which is made in a
semi-molten state in a high temperature plasma gas, preferably a
high temperature plasma gas such as Ar or Ar+H.sub.2, in a reducing
atmosphere, is transported and deposited onto the undercoat by such
a gas, to form a ceramic layer which serves as a target material.
In this manner, the oxide ceramic powder is reduced, and a ceramic
layer comprising MO.sub.x as the main component, is obtained.
[0039] By forming the undercoat, the difference in thermal
expansion between the ceramic layer and the substrate can be
reduced, whereby a ceramic layer which is free from peeling even
with a thickness as thick as from 2 to 10 mm, can be formed.
[0040] Also at the time of forming the undercoat, it is preferred
to form it by plasma spraying in a high temperature plasma gas,
preferably in a high temperature plasma gas in a reducing
atmosphere, for the same reason as described above.
[0041] Further, as the plasma spraying method, water plasma
spraying is more effective. This water plasma spraying is a method
wherein a high pressure water stream supplied to a torch firstly
forms a cylindrical eddy current at the cylindrical section, and in
this state, a voltage is applied between a carbon cathode and an
iron rotary anode to let direct current arcs form to evaporate and
recompose water at the inner surface of the eddy current to form a
plasma state thereby to generate plasma arcs continuously, and such
plasma arcs are constricted by the revolving cylindrical water
current to increase the energy density and eject a stabilized high
temperature high speed plasma jet flame from a nozzle by rapid
thermal expansion of the plasma. This spraying method provides a
high energy density as compared with a gas plasma density, and a
large amount of the starting material powder can thereby be sprayed
all at once, whereby the target forming speed is high, and the
economical efficiency is high. Further, it is thereby possible to
readily form a thick film.
[0042] However, as compared with plasma spraying by a reducing gas,
the reducing power is weak. Therefore, to obtain a state of
MO.sub.x, it is better to employ a material which is reduced at the
stage of the starting material powder.
[0043] The present invention further provides a method for forming
a high refractive index film employing the above described
target.
[0044] A uniform transparent film can be formed at a high speed,
when sputtering is carried out by using the target of the present
invention in an argon atmosphere or in a mixed atmosphere of argon
and small amount of O.sub.2 under a pressure of from
1.times.10.sup.-3 to 1.times.10.sup.-2 Torr. In a case where a
metal target is employed, a hysteresis phenomenon occurs which is a
non-continuous change in the film forming speed or the discharge
current or voltage due to change of the oxygen partial pressure.
However, when the target of the present invention is employed, such
a hysteresis phenomenon will not occur, and control of the film
forming speed during the film formation will be very easy.
[0045] When a metal target is used for forming a metal oxide film,
the film forming speed or the sputtering voltage changes abruptly
and non-continuously in a hysteresis fashion due to a change of the
oxygen gas partial pressure before or after the change from an
absorbing film to a transparent film having the stoichiometrical
composition, or before or after the change from a transparent film
to an absorbing film. Accordingly, to obtain a transparent film
constantly, it is necessary to introduce oxygen gas substantially
excessively relative to the metal atoms.
[0046] Whereas, the target of the present invention is composed of
an oxide, and is slightly deficient in oxygen as compared with the
stoichiometric composition. Accordingly, film formation of a
transparent metal oxide film can be carried out simply by
supplementing the oxygen slightly deficient as compared with the
stoichiometric composition. Besides, when the target of the present
invention is employed, no change like the above mentioned
hysteresis phenomenon will take place, whereby the amount of the
oxygen gas to be supplied can be minimized to the required minimum
or reduced to a level close to the required minimum. Thus,
deposition of excess oxygen atoms on the target surface, which is
believed to cause deterioration of the film forming speed, can be
reduced, and the film forming speed can be increased.
[0047] When a target is produced by a spraying method as in the
present invention, the oxide powder is made in a molten state and
then quenched and solidified so that the sprayed material will be
laminated on the substrate. At that time, crystal alignment will
form in the sprayed material, since there is a difference in the
crystal growth rate of crystal faces. Namely, the face at which the
surface density is low and the growth rate is high, crystallizes
quickly in the direction along the substrate, and crystal alignment
will necessarily form, so that the face at which the surface
density is high and the growth rage is low, becomes the sputtering
surface.
[0048] On the other hand, it is believed that the higher the
surface density, the better the sputtering efficiency, and the
higher the sputtering speed. Accordingly, this crystal alignment is
believed to be one of the factors for the high film forming speed
by the present invention. Further, sputtering speed is believed to
be increased by numerous defective layers formed in or between
grains at the time of quenching and solidification, which are
susceptible to etching as compared with normal tissues.
[0049] Further, with a sputtering target thus prepared, thermal
conductivity from the ceramic layer to the substrate and further to
the cathode electrode, is good, and the ceramic layer is firmly
bonded to the substrate. Accordingly, even when a high sputtering
power is applied to increase the film forming speed, cooling can
sufficiently be carried out, and peeling or cracking of the ceramic
layer due to abrupt heat shock will not take place, and a large
electric power per unit area can be applied.
[0050] Further, even when an erosion zone of the ceramic layer
became thin, such a zone can readily be regenerated to the initial
state by plasma spraying a ceramic powder of the same material to
such a portion which became thin. Further, it is easy to provide a
distribution in thickness of the ceramic layer depending upon any
desired position, and it is thereby possible to control the
thickness distribution of a thin film to be formed by providing a
temperature distribution or a distribution in strength of the
magnetic field at the target surface.
[0051] Further, when a cylindrical substrate is employed, the
entire surface will be the erosion zone of the target, whereby
there is a merit that the utilization efficiency of the target is
high as compared with the planer type.
BEST MODE FOR CARRYING OUT THE INVENTION
EXAMPLE 1 TO 7
[0052] Commercially available Nb.sub.2O.sub.5 powder was filled in
a hot pressing mold made of carbon, and hot pressing was carried
out by maintaining it in an argon atmosphere for one hour at a
temperature within a range of from 1,100.degree. C. to
1,400.degree. C., as identified in Table 1. At that time, the hot
pressing pressure was 50 kg/cm.sup.2. The density and the
resistivity of the sintered product thus obtained as a target
material, were measured.
[0053] Then the obtained sintered body was pulverized in an agate
mortar and then heated at 1100.degree. C. in air, whereby the
weight increase was measured. Assuming that after such heating in
air, the powder became completely oxidized Nb.sub.2O.sub.5, the
oxygen content of the sintered body after the hot pressing was
calculated from the weight increase. The results are shown in Table
1.
1TABLE 1 Oxygen content Density Resistivity of the Hot of the of
the sintered pressing sintered sintered body Example temperature
body body (x in No. (.degree. C.) (g/cc) (.OMEGA.cm) NbO.sub.x) 1
1100 4.00 0.30 2.498 2 1150 4.13 0.21 2.495 3 1200 4.20 0.15 2.490
4 1250 4.30 0.14 2.465 5 1300 4.36 0.12 2.465 6 1350 4.40 0.12
2.465 7 1400 4.42 0.12 2.465
EXAMPLES 8 TO 11
[0054] The sintered body hot-pressed at 1200.degree. C. in Example
3, was mechanically processed to a size of 6 inch in diameter and 5
mm in thickness to obtain a target. The target was used as bonded
by a metal bond to a backing plate made of copper.
[0055] This target was mounted on a magnetron DC sputtering
apparatus, and film formation of a Nb.sub.2O.sub.5 film was carried
out. The film formation was carried out under such conditions that
the applied power was DC 1 kW, the back pressure was
1.times.10.sup.-5 Torr, and the sputtering pressure was
2.times.10.sup.-3 Torr. As the sputtering gas, a gas having argon
and oxygen mixed in various oxygen concentration, was used. The
proportion of the oxygen gas in the sputtering gas was from 10 to
40 volume %. If the oxygen is lower than 10 volume %, the film will
be an absorptive film, and in order to obtain a transparent film,
oxygen was required to be at least 10 volume %.
[0056] As the substrate, a soda lime glass was used. No intentional
heating was applied to the substrate. The sputtering was carried
out so that the film thickness would be about 100 nm. During the
sputtering, the electrical discharge was very stable, and film
formation was carried out under a stable condition even by DC
sputtering. After the film formation, the film thickness was
measured by means of a feeler type film thickness measuring
apparatus. Further, the refractive index of the film was measured
by an ellipsometer. The wavelength of light employed at that time,
was 633 nm. The film forming speed and the refractive index of the
film are shown in Table 2. All of the films obtained were
transparent and showed no light absorption.
[0057] As is apparent from the results in Table 2 by using the
target of the present invention, a transparent Nb.sub.2O.sub.5 film
having a high refractive index was formed at a high speed.
COMPARATIVE EXAMPLES 1 TO 3
[0058] As Comparative Example 1, using a metal titanium target
instead of the target of Example 8, film formation by sputtering
was carried out in the same manner. The proportion of oxygen gas in
the sputtering gas was 30 volume %. In the case of a titanium
target, if oxygen is lower than 30 volume %, the film becomes an
absorptive film, and in order to obtain a transparent film, oxygen
was required to be at least 30 volume %. Accordingly, sputtering
was carried out at an oxygen concentration of 30 volume % which was
the oxygen proportion at which a transparent film could be obtained
and the film forming speed was highest.
[0059] Further, as Comparative Example 2, using a metal niobium
target instead of the target of Example 8, film formation by
sputtering was carried out in the same manner. In the case of metal
niobium target, the sputtering was carried out at an oxygen
concentration of 30 volume % for the same reason as mentioned
above.
[0060] As Comparative Example 3, using a titanium monoxide (TiO)
target (density: 4.90 g/cc, resistivity: 3.0.times.10.sup.-4
.OMEGA.cm, oxygen content: 25.0 wt %), film formation by sputtering
was carried out in the same manner. In the case of the TiO target,
if oxygen is lower than 20%, the film becomes absorptive, and in
order to obtain a transparent film, oxygen was required to be at
least 20%. Accordingly, sputtering was carried out by selecting a
case of the oxygen proportion of 20% at which the film formation
speed was highest.
[0061] As is evident from the results in Table 2, the film forming
speeds for transparent Nb.sub.2O.sub.5 and TiO.sub.2 in Comparative
Examples 1 to 3, were inferior as compared with the cases in which
targets of the present invention were used.
2 TABLE 2 Oxygen content in the Film sputtering forming gas speed
Refractive Target (volume %) (nm/min) index Example 8 NbO.sub.x 10
85 2.3 Example 9 NbO.sub.x 20 70 2.3 Example 10 NbO.sub.x 30 40 2.3
Example 11 NbO.sub.x 40 30 2.3 Comparative Ti 30 6 2.4 Example 1
Comparative Nb 30 13 2.3 Example 1 Comparative TiO 20 7 2.4 Example
1
EXAMPLES 12 TO 15
[0062] To commercially available Nb.sub.2O.sub.5 powder, an oxide
of Cr, Ce, Al or Si was added in a proportion
(oxide/oxide+Nb.sub.2O.sub.5) as identified in Table 3 and mixed
with the Nb.sub.2O.sub.5 powder in a ball mill. Such a powder
mixture was filled into a hot pressing mold made of carbon, and hot
pressing was carried out under the same conditions as in Example 3
to obtain a sintered body. With respect to each sintered body, the
density and resistivity were measured in the same manner as in
Examples 1 to 7. The results are shown in Table 3. Such a sintered
body was formed into a target in the same manner as in Example 8,
and film formation by sputtering was carried out, whereby the film
forming speed was from 30 to 90 nm/min, and the refractive index
was 2.3.
[0063] Further, a part of each sintered body was subjected to acid
dissolution or alkali fusion to obtain its aqueous solution, and
the composition of the sintered body was analyzed by an ICP
apparatus whereby it was confirmed that the composition of the
charged powder mixture and the composition of the sintered body
were substantially in agreement.
3TABLE 3 Density Resistivity Amount of the of the of the sintered
sintered Example additive body body No. Additive (wt %) (g/cc)
(.OMEGA.cm) 12 Cr.sub.2O.sub.3 20 4.52 0.45 13 CeO.sub.2 20 4.70
0.30 14 Al.sub.2O.sub.3 5 4.42 0.20 15 SiO.sub.2 5 4.21 0.20
EXAMPLE 16
[0064] By changing NbO.sub.x in Example 3 to TaO.sub.x (x=2.470),
the operation was carried out in the same manner as in Examples 8
to 11 and Examples 12 to 15, whereby similar good results were
obtained.
[0065] Further, by changing TaO.sub.x (x=2.470) to MoO.sub.x
(x=2.950), WO.sub.x (x=2.955), ZrO.sub.x (x=1.995, and 8 mol % of
Y.sub.2O.sub.3 was added) and HfO.sub.x (x=1.995), respectively,
the operations were carried out in the same manner, and similar
good results were obtained.
Example 17
[0066] High purity TiO.sub.2 powder (average particle size: at most
10 .mu.m) was mixed in a wet system for 3 hours in a ball mill
using PVA binder and water as a medium, and the obtained slurry was
granulated by means of a spray drier to obtain a ceramic powder
having a particle size of from 20 to 100 .mu.m.
[0067] Using a copper planer having a diameter of 6 inches as a
target metal holder, the outer surface was roughened by sand
blasting by means of Al.sub.2O.sub.3 abrasive grains to obtain a
roughened surface.
[0068] Then, an alloy powder of Ni-Al (weight ratio of 8:2) was
plasma-sprayed (using a metoko sprayer) under a reducing atmosphere
to form an undercoat layer A having a thickness of 50 .mu.m. This
plasma spraying under a reducing atmosphere was carried out using
Al+H.sub.2 gas as the plasma gas at a flow rate of 42.5 1/min by
applying a power of 35 kV at 700 A to instantaneously heat the
alloy powder of Ni-Al by the Ar+H.sub.2 gas plasma of from 10,000
to 20,000.degree. C. and to transport the alloy powder together
with the gas onto the target metal holder to let it solidify
thereon. The coating film was formed by repeating an operation of
moving the plasma spraying gun right and left and up and down.
[0069] Then, using a Ti metal powder, plasma spraying was carried
out in the same manner as above to form an undercoat layer B having
a thickness of 50 .mu.m. Further, using the above mentioned ceramic
powder, plasma spraying was carried out under the same reducing
atmosphere to form a ceramic layer having a final thickness of 5
mm.
[0070] The ceramic layer of the obtained target was cut out from
the metal substrate, and the density and the resistivity were
measured. Further, the obtained ceramic layer was pulverized in an
agate mortar and heated to 1100.degree. C. in air, whereby the
weight increase was measured. Assuming that after the heating in
air, the powder became completely oxidized TiO.sub.2, the oxygen
content of the ceramic layer was calculated from the weight
increase. The results are shown in Table 4.
4 TABLE 4 Density Resistivity x in (g/cc) (.OMEGA.cm) TiO.sub.x
Example 17 4.07 0.33 1.93
[0071] EXAMPLES 18 TO 21
[0072] The target of Example 17 was mounted on a magnetron
sputtering apparatus, and film formation of a TiO.sub.2 film was
carried out by changing the O.sub.2 proportion in the sputtering
gas as shown in Table 5. As the sputtering gas, Ar or a gas mixture
of Ar and O.sub.2, was used. The sputtering was carried out under
such conditions that the applied power was DC 1 kW, the back
pressure was 1.times.10.sup.-5 Torr, and the sputtering pressure
was 2.times.10.sup.-3 Torr. As the substrate, a soda lime glass was
used, and no intentional heating was applied to the substrate. The
sputtering was carried out so that the film thickness would be
about 100 nm. During the sputtering, the discharge was very stable,
and film formation was carried out under a stabilized condition
even by DC sputtering.
[0073] After the film formation, the refractive index of the film
was measured by an ellipsometer (the wavelength of light used was
633 nm). The film forming speed and the refractive index of the
film are shown in Table 5. All of the obtained films were
transparent and showed no light absorption.
5 TABLE 5 Oxygen propotion Film- in the forming sputtering speed
Refractive Target gas (%) (nm/min) index Example 18 TiO.sub.x 0 60
2.4 Example 19 TiO.sub.x 10 30 2.4 Example 20 TiO.sub.x 20 20 2.4
Example 21 TiO.sub.x 30 10 2.4
EXAMPLES 22 TO 25
[0074] Commercially available high purity TiO.sub.2 powder and an
oxide powder as identified in Table 6 as an additive were mixed, so
that the amount of the additive was as shown in Table 6. From such
a powder, a ceramic powder was prepared in the same manner as in
Example 17, and plasma spraying was carried out in the same manner
as in Example 17 to obtain a target having a ceramic layer having a
thickness of 5 mm. The density and resistivity of the obtained
ceramic layer were measured, and results are shown in Table 6.
[0075] A part of the ceramic layer constituting a target material
was subjected to acid dissolution or alkali fusion to obtain its
aqueous solution, and the composition of the sintered body was
analyzed by an ICP apparatus, whereby it was confirmed that the
composition of the charged powder mixture and the composition of
the sintered body were substantially in agreement.
[0076] Further, with respect to the obtained target, film formation
of TiO.sub.2 film was carried out in the same manner as in Examples
18 to 21. During the sputtering, the discharge was very stable, and
film formation was carried out under a stabilized condition even by
DC sputtering. The film-forming speed and the refractive index of
the films were the same as in Examples 18 to 21, and all of the
obtained films were transparent and showed no light absorption.
6TABLE 6 Density Resistivity Amount of the of the of the sintered
sintered Example additive body body No. Additive (wt %) (g/cc)
(.OMEGA.cm) 22 Cr.sub.2O.sub.3 20 4.30 0.62 23 CeO.sub.2 20 4.41
0.61 24 Al.sub.2O.sub.3 5 4.09 0.22 25 SiO.sub.2 5 4.01 0.15
EXAMPLE 26
[0077] In Example 17, instead of using the copper plate having a
diameter of 6 inches as a target metal holder and roughening its
outer surface by sand blasting by means of Al.sub.2O.sub.3 abrasive
grains to a roughened surface, a copper cylindrical target holder
having an inner diameter of 50.5 mm, and outer diameter of 67.5 mm
and a length of 406 mm, was attached to a lathe, and its outer
surface side was threaded and further surface roughened by sand
blasting by means of Al.sub.2O.sub.3 abrasive grains to form a
roughened surface, and otherwise, in the same manner as in Example
1, a target was prepared. And, in the same manner as in Example 17,
the density, the resistivity and the oxygen content of the ceramic
layer of the target were measured. The results were the same as in
Example 17.
EXAMPLE 27
[0078] Film formation of a TiO.sub.2 film was carried out in the
same manner as in Example 18 to 21 except that the targets in
Examples 18 to 21 were used as the target of Example 26.
[0079] During the sputtering, the discharge was very stable, and
film formation was carried out under a stabilized condition even by
DC sputtering. Further, all of the obtained films were transparent
and showed no light absorption.
[0080] The film-forming speed and the refractive indexes of the
films were the same as in Examples 18 to 21.
EXAMPLE 28
[0081] A target was prepared in the same manner as in Example 17
except that in Example 17, the obtained ceramics powder was
heat-treated at 1,000.degree. C. in an inert atmosphere to obtain a
reduced powder, and the ceramic layer was formed by water plasma
spraying. The density and the resistivity of the ceramic layer of
the obtained target were the same as in Example 17. Further, the
oxygen content was examined in the same manner as in Example 17 and
found to be the same as in Example 17. The ceramic layer-forming
time in a case where the ceramic layer of the target was 5 mm in
thickness, is shown in Table 7 as compared with Example 17.
7 TABLE 7 Ceramics layer-forming time (hrs) Example 17 2.5 Example
28 0.3
INDUSTRIAL APPLICABILITY
[0082] By using the sputtering target of the present invention, a
transparent film having a high refractive index can be formed at a
high speed by DC sputtering. Further, with the target of the
present invention, the oxygen partial pressure of the sputtering
atmosphere can be reduced, thus providing a merit that abnormal
discharge such as arcing can be reduced. Accordingly, by using the
target of the present invention, a film having a high refractive
index can be produced at a high speed and under a stabilized
condition.
[0083] The target prepared by the process of the present invention
is uniform, highly dense and strong against thermal shock.
According to the process of the present invention, a target having
an optional shape can easily be produced without requiring
conventional shaping, sintering, processing or bonding step.
[0084] Further, with the sputtering target of the present
invention, the target can be regenerated by plasma spraying a
spraying powder of fresh target material having the same
composition to a consumed portion after use, such being
economically advantageous.
[0085] Further, in a case of a Ti type MO.sub.x, a photocatalytic
function is expected, and a film capable of imparting an
antibacterial, antifouling or drip flowing property to a substrate
surface of glass or other than glass such as plastic, can be formed
at a high speed.
[0086] By using the sputtering target of the present invention, the
cooling effect during the sputtering is high, whereby even if the
sputtering power is increased, cracking or breakage of the target
will not take place, and film forming at a high speed can be
carried out under a stabilized condition at a low temperature.
Thus, the productivity of not only display elements or CRT but also
large surface glasses for buildings or automobiles, can remarkably
be improved.
[0087] Further, even on a substrate made of e.g. plastic which is
susceptible to the influence of radiant heat from the target, high
speed film forming can be carried out without damaging the
substrate.
* * * * *