U.S. patent application number 09/982717 was filed with the patent office on 2002-02-28 for semiconductor device and method for producing the same.
Invention is credited to Matsuda, Kenichi.
Application Number | 20020025597 09/982717 |
Document ID | / |
Family ID | 18228396 |
Filed Date | 2002-02-28 |
United States Patent
Application |
20020025597 |
Kind Code |
A1 |
Matsuda, Kenichi |
February 28, 2002 |
Semiconductor device and method for producing the same
Abstract
A photo-detecting device includes: a semiconductor substrate; a
multilayer structure formed on the semiconductor substrate; an
island-like photo-detecting region formed in at least a portion of
the multilayer structure, the island-like photo-detecting region
having a central portion; and a light -shielding mask formed on the
semiconductor substrate so as to shield from light a portion of the
island-like photo-detecting region at least excluding the central
portion. The light-shielding mask comprises an upper metal film and
a lower metal film, and the upper metal film and the lower metal
film are at least partially isolated by an insulative film, the
upper metal film and the lower metal film having different
patterns.
Inventors: |
Matsuda, Kenichi; (Osaka,
JP) |
Correspondence
Address: |
SNELL & WILMER
ONE ARIZONA CENTER
400 EAST VAN BUREN
PHOENIX
AZ
850040001
|
Family ID: |
18228396 |
Appl. No.: |
09/982717 |
Filed: |
October 18, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09982717 |
Oct 18, 2001 |
|
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|
09442548 |
Nov 18, 1999 |
|
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Current U.S.
Class: |
438/57 ; 257/435;
257/98; 257/E31.057; 257/E31.125 |
Current CPC
Class: |
H01L 31/103 20130101;
H01L 31/022416 20130101; Y02E 10/547 20130101; H01L 31/1804
20130101; H01L 31/02164 20130101; Y02P 70/50 20151101; H01L 31/105
20130101; Y02P 70/521 20151101 |
Class at
Publication: |
438/57 ; 257/435;
257/98 |
International
Class: |
H01L 021/00 |
Claims
What is claimed is:
1. A photo-detecting device comprising: a semiconductor substrate;
a multilayer structure formed on the semiconductor substrate; an
island-like photo-detecting region formed in at least a portion of
the multilayer structure, the island-like photo-detecting region
having a central portion; and a light-shielding mask formed on the
semiconductor substrate so as to shield from light a portion of the
island-like photo-detecting region at least excluding the central
portion, wherein the light-shielding mask comprises an upper metal
film and a lower metal film, and the upper metal film and the lower
metal film are at least partially isolated by an insulative film,
the upper metal film and the lower metal film having different
patterns.
2. A photo-detecting device according to claim 1, wherein the upper
metal film and the lower metal film each have an inner end portion
located adjacent to the photo-detecting region, wherein the inner
end portion of the upper metal film is located more closely to the
photo-detecting region, along a horizontal direction, than the
inner end portion of the lower metal film, and the upper metal film
is not provided in a further region which is located at a
predetermined distance from the photo-detecting region, the further
region being shielded from light by the lower metal film.
3. A photo-detecting device according to claim 1, wherein wherein
the inner end portion of the upper metal film is in an overlapping
relation with the photo-detecting region.
4. A photo-detecting device according to claim 1, wherein the upper
metal film is electrically coupled with the lower metal film via an
opening in the insulative film.
5. A photo-detecting device according to claim 1, wherein an outer
end portion of the semiconductor substrate is shielded from light
by the lower metal film, and wherein the insulative film and the
upper metal film are not formed at in the outer end portion of the
semiconductor substrate.
6. A photo-detecting device comprising: a semiconductor substrate;
a light absorption layer and a window layer formed in this order on
the semiconductor substrate; a diffusion region formed in an
island-like shape in the window layer; a negative electrode formed
on a portion of the diffusion region; an insulative film formed on
a portion of the window layer at least excluding a central portion
of the diffusion region; a pad formed on a region of the insulative
film which is located at a predetermined distance from the
diffusion region; wiring formed on the insulative film for
electrically connecting the negative electrode with the pad; an
upper metal film formed on the insulative film so as to surround
the diffusion region without overlapping the wiring; and a lower
metal film formed between the window layer and the insulative film,
wherein the negative electrode, the pad, the wiring, and the upper
metal film are formed from the same thin metal film.
7. A photo-detecting device according to claim 6, wherein
substantially the entire diffusion region above the semiconductor
substrate at least excluding the central portion is shielded from
light by at least one of the upper metal film and the lower metal
film.
8. A photo-detecting device according to claim 7, further
comprising a positioning mark formed in a portion of the diffusion
region above the semiconductor substrate at least excluding the
central portion, the positioning mark being shielded from light by
neither the upper metal film nor the lower metal film.
9. A photo-detecting device according to claim 6, further
comprising a contact hole and a positive electrode, wherein the
contact hole is located in a region where the window layer and the
light absorption layer above the semiconductor substrate has been
removed, and wherein the positive electrode comprises a portion of
the lower metal film which is present in an exposed surface of the
contact hole.
10. A photo-detecting device according to claim 6, further
comprising a positive electrode formed on the semiconductor
substrate and a back face metal film formed on a back face of the
semiconductor substrate.
11. A photo-detecting device according to claim 6, further
comprising a side face metal film formed on at least one side face
of the semiconductor substrate, the light absorption layer, and the
window layer.
12. A method for producing a photo-detecting device comprising the
steps of: growing a light absorption layer and a window layer on a
semiconductor substrate in this order; forming an island-like
diffusion region in the window layer by diffusing an impurity
therein; depositing a lower metal film on a portion of the window
layer excluding the island-like diffusion region; depositing an
insulative film on the window layer and the lower metal film;
forming an opening over the island-like diffusion region by
partially etching away the insulative film; depositing and lifting
off a thin metal film so as to simultaneously form a negative
electrode, a pad, wiring, and an upper metal film.
13. A method for producing a photo-detecting device according to
claim 12, wherein the lower metal film is a lamination film
comprising Cr, Pt, and Au.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a photo-detecting device.
In particular, the present invention relates to a photo-detecting
device which provides fast photo-sensitive response, with a reduced
photocurrent component (tail current) which has very slow response
as compared to that of the majority of the photocurrent: and a
method for producing the same.
[0003] 2. Description of the Related Art
[0004] One class of photo-detecting devices having fast
photo-sensitive response which are currently in wide use are
so-called "pin photodiodes". Pin photodiodes can be further
classified depending on the type of material used as semiconductor
material, i.e., "silicon pin photodiodes", which are based on
silicon, and "compound semiconductor pin photodiodes", which are
based on compound semiconductor materials.
[0005] In general, a pin photodiode can be produced in the
following manner.
[0006] First, a low concentration n-type semiconductor layer is
allowed to grow its crystal on a high concentration n-type
semiconductor substrate. Next, in predetermined regions which are
to become island-like diffusion regions, a p-type impurity is
diffused to some depth from the surface of the low concentration
n-type semiconductor growth layer, thereby forming the island-like
diffusion regions. Thereafter, a negative electrode is formed on
the upper face of some of the islands of p-type diffusion regions,
and a positive electrode is formed on the back face of the high
concentration n-type semiconductor substrate. Thus, a pin
photodiode is produced.
[0007] In the case of producing a compound semiconductor pin
photodiode, e.g., InGaAs/InP, in particular, the low concentration
n-type semiconductor growth layer may be formed in two layers.
These two growth layers may include a light absorption layer which
is adjacent to the semiconductor substrate, and a window layer
formed on the light absorption layer, such that the window layer
has a larger energy band gap than that of the light absorption
layer. The size of the energy band gap can be adjusted by selecting
the compound semiconductor material and appropriately changing the
component ratios thereof. Next, a p-type impurity is diffused in
the window layer to form island-like diffusion regions, whereby a
compound semiconductor pin photodiode is produced. It should be
noted that it is impossible to form such a window layer in a
silicon pin photodiode structure because its energy band gap cannot
be changed.
[0008] In a compound semiconductor pin photodiode having the
above-described structure, regions of the light absorption layer
which lie under the p-type diffusion regions function as
photo-detecting portions. In the photo-detecting portions, a
photocurrent is generated responsive to incident light which enters
through the growth surface of the window layer.
[0009] Specifically, electron-hole pairs are generated through
photoexcitation occurring in regions (photo-detecting portions) of
the light absorption layer located under the p-type diffusion
regions. The generated electron-hole pairs are dissociated by a
potential barrier (electric field) at the p-n junction, so that the
electrons migrate to the high concentration n-type semiconductor
substrate and the holes migrate to the p-type diffusion regions. A
photocurrent results from the migration of the electrons and the
holes.
[0010] Compound semiconductor pin photodiodes which incorporate a
window layer above a light absorption layer as mentioned above can
provide an improved quantum efficiency because the window layer has
a greater energy band gap than that of the light absorption layer
so that the window layer becomes transparent with respect to the
incident light, thereby preventing surface recombination of
electron-hole pairs at the surface of the light absorption
layer.
[0011] A photocurrent in a pin photodiode is primarily generated in
the above-described manner. However, a photocurrent may also be
generated in the case where light enters the window layer in
regions other than the photo-detecting portions. Such a
photocurrent may be generated due to the diffusion of holes, and
has a response which is much slower than the photocurrent that is
generated in the photo-detecting portions. This photocurrent having
a very slow response is commonly referred to as a "tail current",
which may present a significant problem in certain applications of
the photo-detecting device. The mechanism which generates a tail
current will be described below.
[0012] The light entering regions of the window layer other than
those corresponding to the photo-detecting portions generate
electron-hole pairs in the underlying light absorption layer.
However, since no potential barrier (electric field) that is
associated with a p-n junction exists in these regions, the
generated electrons and holes migrate due to diffusion, rather than
due to an electric field. That is, the generated electrons and
holes diffuse in accordance with their respective density gradients
so as to permeate the surrounding low concentration regions. Since
the electrons are the majority carriers in the n-layer (i.e., light
absorption layer), it is presumable that the electrons immediately
create a photocurrent before even reaching the n-substrate. On the
other hand, only those of the holes which have reached the p-type
diffusion regions through diffusion create a photocurrent, whereas
the other holes will recombine with the electrons over a long
period of time. Since the holes have a long lifetime within the
light absorption layer, some holes may reach the p-type diffusion
layer after having diffused through the light absorption layer over
a long period of time. A tail current is defined as a component of
the photocurrent that is attributable to the diffusive migration of
such holes.
[0013] As described above, the cause for a tail current is the
electron-hole pairs generated in regions other than the
photo-detecting portions. Therefore, in order to reduce the tail
current, it has been proposed to construct a photo-detecting device
in which regions other than photo-detecting portions are covered by
a light-shielding film such as a thin metal film. This technique
for reducing the tail current is generally employed in the field of
silicon pin photodiodes.
[0014] However, the aforementioned technique is difficult to apply
to compound semiconductor pin photodiodes due to the nature of the
actual production processes. Specifically, the production of a
compound semiconductor pin photodiode requires highly precise
micro-processing techniques because a depletion layer for a
compound semiconductor material is much narrower than a depletion
layer for silicon, as described below in more detail.
[0015] In a photo-detecting device, regions other than
photo-detecting portions are usually not entirely covered by a
light-shielding film such as a thin metal film because such a
light-shielding film (e.g., a thin metal film) would cause
short-circuiting if they contact an annular electrode, wiring
and/or a pad composed of a conductive material, which are formed on
the surface of a photo-detecting device on which photo-detecting
regions are formed. Rather, such a light-shielding film is provided
so as to have a minimum interspace with each conductive element on
the surface of the photo-detecting device. The interspaces, which
cannot shield incident light, should be minimized in order to
minimize the tail current. Specifically, such a light-shielding
film is only required to be large enough so that its inner end
(i.e., the end adjoining the interspace with a conductive element
on the device surface) is in an overlapping relation with the outer
periphery of an underlying depleted intrinsic semiconductor layer
(i.e., a depletion layer), when viewed from above the light
entering surface (i.e., the upper face of the substrate). In
accordance with this configuration, even if light enters the
depletion layer through the interspace, a very rapid response can
be obtained because of the electric field applied to the depletion
layer, so that no tail current is generated. Another advantage
associated with the photo-detecting device structure in which the
inner end of a light-shielding film is in an overlapping relation
with the outer periphery of an underlying depletion layer is that
no parasitic capacitance is additionally created.
[0016] In the case of a silicon pin photodiode, the depletion layer
has a thickness of about 10 .mu.m or more. The depletion layer also
expands not only along the vertical direction but also along the
horizontal direction over a width of about 10 .mu.m or more in the
vicinity of the photo-detecting regions. Therefore, for a silicon
pin photodiode, the aforementioned interspace may be prescribed to
be about 10 .mu.m in order to sufficiently restrain the tail
current without allowing a parasitic capacitance to be additionally
created.
[0017] On the other hand, in the case of a compound semiconductor
pin photodiode the depletion layer has a thickness of only about 2
.mu.m, while expanding along the horizontal direction over a width
of only about 2 .mu.m. Therefore, for a compound semiconductor pin
photodiode, the aforementioned interspace must be prescribed to be
about 2 .mu.m. Thus, the interspace should be prescribed to be much
smaller for a compound semiconductor pin photodiode than for a
silicon pin photodiode, which will require highly precise
micro-processing techniques. In addition, the micro-processing
techniques for compound semiconductors are generally not as
advanced as those required for silicon. For these reasons, it is
very difficult to produce a compound semiconductor pin photodiode
such that the inner end of a light-shielding film is in an
overlapping relation with the outer periphery of an underlying
depletion layer.
[0018] Furthermore, when producing a light-shielding film adjacent
to an end of a photo-detecting region, a smaller-than-prescribed
interspace may be left between an annular electrode which is formed
at the edge of the photo-detecting portion and the light-shielding
film due to insufficient micro-processing accuracy. In such cases,
a parasitic capacitance may be created between the light-shielding
film and the annular electrode. In extreme cases, the
light-shielding film may be short-circuited with the annular
electrode.
[0019] As described above, the technique of covering regions other
than photo-detecting portions with a light-shielding film cannot be
easily applied to compound semiconductor pin photodiodes. However,
Japanese Laid-Open Publication No. 3-276769 discloses one such
attempt (hereinafter referred to as "Conventional Example"). FIG.
6A is a plan view of a compound semiconductor pin photodiode
(photo-detecting device) 600 of Conventional Example. FIG. 6B is a
cross-sectional view taken along line X-Y in FIG. 6A.
[0020] With reference to FIGS. 6A and 6B, the structure of the
compound semiconductor pin photodiode 600 of Conventional Example,
and a method for producing the same will be described.
[0021] First, an n-InP buffer layer 62, an n-InGaAs light
absorption layer 63, and an n-InP window layer 64 are formed on an
n-InP substrate 61 in this order. After forming a diffusion region
66 in a portion of the window layer 64 by diffusing a p-type
impurity therein, a semi-insulative InP capping layer 67 is allowed
to grow its crystal over the upper face of the diffusion region 66
and the window layer 64. A via hole is formed in the capping layer
67, in which a p-InGaAs conductive embedded layer 68 is allowed to
grow its crystal. Then, a p-InGaAs wiring layer 69 and a p-InGaAs
wire bonding portion 70 are formed on the capping layer 67 through
p-InGaAs crystal growth. The semi-insulative InP capping layer 67
is employed for reducing the interlayer capacitance between the
wiring layer 69 and the wire bonding section 70 and the n-InP
window layer 64. Thereafter, an insulative film 71 (e.g., SiN) is
formed on the wiring layer 69 and the exposed capping layer 67.
Finally, a thin metal film (e.g., Ti/Au) is vapor-deposited and
patterned into a pad 72 on the wire bonding section 70 and a
light-shielding film 73 on the insulative film 71. A positive
electrode 65 is formed on the back face of the substrate 61. This
completes the compound semiconductor pin photodiode 600 of
Conventional Example.
[0022] In accordance with the compound semiconductor pin photodiode
600 of Conventional Example, regions other than the photo-detecting
portions 74 are basically covered by a thin metal film. As a
result, the tail current of this device can be reduced to a certain
extent.
[0023] In accordance with Conventional Example described above with
reference to FIGS. 6A and 6B, the pad 72 and the light-shielding
film 73 may be short-circuited when performing a wire bonding or
flip-chip bonding step for the following reasons. In general, a pin
photodiode is required to have a minimized device capacitance in
order to operate at a high speed. Therefore, the pad area should be
minimized as much as possible. Moreover, the interspace between the
light-shielding film and the pad must be minimized in order to
obtain a satisfactory light-shielding effect for reducing the tail
current. However, designing a pin photodiode so as to have a small
pad area and a minimized interspace between the pad and the
light-shielding film invites a high possibility of short-circuiting
between the pad and the light-shielding film because a deformed tip
end portion of a wire, which is typically formed during the wire
bonding step, may easily reach the light-shielding film. Even if a
flip-chip bonding technique is employed to mount the pin
photodiode, instead of wire bonding, there is a high possibility of
short-circuiting between the pad and the light-shielding film due
to misalignment between the photodiode chip and a bump on a wiring
substrate.
SUMMARY OF THE INVENTION
[0024] A photo-detecting device according to the present invention
includes: a semiconductor substrate; a multilayer structure formed
on the semiconductor substrate; an island-like photo-detecting
region formed in at least a portion of the multilayer structure,
the island-like photo-detecting region having a central portion;
and a light-shielding mask formed on the semiconductor substrate so
as to shield from light a portion of the island-like
photo-detecting region at least excluding the central portion,
wherein the light-shielding mask comprises an upper metal film and
a lower metal film, and the upper metal film and the lower metal
film are at least partially isolated by an insulative film, the
upper metal film and the lower metal film having different
patterns.
[0025] In one embodiment of the invention, the upper metal film and
the lower metal film each have an inner end portion located
adjacent to the photo-detecting region; the inner end portion of
the upper metal film is located more closely to the photo-detecting
region, along a horizontal direction, than the inner end portion of
the lower metal film: and the upper metal film is not provided in a
further region which is located at a predetermined distance from
the photo-detecting region, the further region being shielded from
light by the lower metal film.
[0026] In another embodiment of the invention, the inner end
portion of the upper metal film is in an overlapping relation with
the photo-detecting region.
[0027] In still another embodiment of the invention, the upper
metal film is electrically coupled with the lower metal film via an
opening in the insulative film.
[0028] In still another embodiment of the invention, an outer end
portion of the semiconductor substrate is shielded from light by
the lower metal film, and the insulative film and the upper metal
film are not formed at in the outer end portion of the
semiconductor substrate.
[0029] Alternatively, the photo-detecting device according to the
present invention includes: a semiconductor substrate; a light
absorption layer and a window layer formed in this order on the
semiconductor substrate; a diffusion region formed in an
island-like shape in the window layer: a negative electrode formed
on a portion of the diffusion region; an insulative film formed on
a portion of the window layer at least excluding a central portion
of the diffusion region; a pad formed on a region of the insulative
film which is located at a predetermined distance from the
diffusion region; wiring formed on the insulative film for
electrically connecting the negative electrode with the pad; an
upper metal film formed on the insulative film so as to surround
the diffusion region without overlapping the wiring; and a lower
metal film formed between the window layer and the insulative film,
wherein the negative electrode, the pad, the wiring, and the upper
metal film are formed from the same thin metal film.
[0030] In one embodiment of the invention, substantially the entire
diffusion region above the semiconductor substrate at least
excluding the central portion is shielded from light by at least
one of the upper metal film and the lower metal film.
[0031] In another embodiment of the invention, the photo-detecting
device further includes a positioning mark formed in a portion of
the diffusion region above the semiconductor substrate at least
excluding the central portion, the positioning mark being shielded
from light by neither the upper metal film nor the lower metal
film.
[0032] In still another embodiment of the invention, the
photo-detecting device further includes a contact hole and a
positive electrode, wherein the contact hole is located in a region
where the window layer and the light absorption layer above the
semiconductor substrate has been removed, and wherein the positive
electrode comprises a portion of the lower electrode which is
present in an exposed surface of the contact hole.
[0033] In still another embodiment of the invention, the
photo-detecting device further includes a positive electrode formed
on the semiconductor substrate and a back face metal film formed on
a back face of the semiconductor substrate.
[0034] In still another embodiment of the invention, the
photo-detecting device further includes a side face metal film
formed on at least one side face of the semiconductor substrate,
the light absorption layer, and the window layer.
[0035] In another aspect of the invention, there is provided a
method for producing a photo-detecting device including the steps
of: growing a light absorption layer and a window layer on a
semiconductor substrate in this order; forming an island-like
diffusion region in the window layer by diffusing an impurity
therein; depositing a lower metal film on a portion of the window
layer excluding the island-like diffusion region; depositing an
insulative film on the window layer and the lower metal film;
forming an opening over the island-like diffusion region by
partially etching away the insulative film; depositing and lifting
off a thin metal film so as to simultaneously form a negative
electrode, a pad, wiring,-and an upper metal film.
[0036] In one embodiment of the invention, the lower metal film is
a lamination film comprising Cr, Pt, and Au.
[0037] Thus, the invention described herein makes possible the
advantages of (1) providing a photo-detecting device structure in
which the chip surface, excluding a photo-detecting portion, yet
including end portions of the chip, is shielded from light, while
substantially eliminating the possibility of short-circuiting
between a pad and a light-shielding film during a wire bonding or
flip-chip bonding step, and whose device capacitance is prevented
from increasing due to the incorporation of the light-shielding
film; and (2) providing a method for easily producing the
aforementioned photo-detecting device with a minimum increase in
the number of production steps relative to methods for producing
conventional compound semiconductor pin photodiodes.
[0038] These and other advantages of the present invention will
become apparent to those skilled in the art upon reading and
understanding the following detailed description with reference to
the accompanying figures.
BRIEF DESCRIPTION OF THE DRAWINGS
[0039] FIG. 1A includes a plan view (a), and a cross-sectional view
(b) taken along line X-X' in FIG. 1A(a), of a compound
semiconductor pin photodiode 100 according to Example 1 of the
present invention.
[0040] FIG. 1B is a cross-sectional view taken along line Y-Y' in
FIG. 1A(a).
[0041] FIG. 1C includes plan views (a) and (b) describing the
photo-detecting device 100 according to Example 1 of the present
invention, where (a) illustrates a metal layer region which is
formed by using the same pattern as that used for forming an upper
metal film, and (b) illustrates a region in which a lower metal
film is to be formed.
[0042] FIG. 2A is a cross-sectional view showing a step in a method
for manufacturing the photo-detecting device 100 according to
Example 1 of the present invention.
[0043] FIG. 2B is a cross-sectional view showing a step in a method
for manufacturing the photo-detecting device 100 according to
Example 1 of the present invention.
[0044] FIG. 2C is a cross-sectional view showing a step in a method
for manufacturing the photo-detecting device 100 according to
Example 1 of the present invention.
[0045] FIG. 2D is a cross-sectional view showing a step in a method
for manufacturing the photo-detecting device 100 according to
Example 1 of the present invention.
[0046] FIG. 3A is a characteristics graph illustrating the incident
position dependency of the photosensitivity of a photo-detecting
device according to Comparative Examples.
[0047] FIG. 3B is a characteristics graph illustrating the incident
position dependency of the photosensitivity of the photo-detecting
device 100 according to Example 1 of the present invention.
[0048] FIG. 4 is a characteristics graph illustrating the tail
current of a photo-detecting device according to Comparative
Example (.largecircle.) and that of the photo-detecting device 100
according to Example 1 of the present invention
(.circle-solid.).
[0049] FIG. 5A is a plan view of a photo-detecting device 200
according to Example 2 of the present invention.
[0050] FIG. 5B is a cross-sectional view taken along line X-X' in
FIG. 5A.
[0051] FIG. 6A is a plan view of a compound semiconductor pin
photodiode 600 of Conventional Example.
[0052] FIG. 6B is a cross-sectional view taken along line X-Y in
FIG. 6A.
[0053] FIG. 7A is a plan view of a compound semiconductor pin
photodiode 700 of Comparative Example.
[0054] FIG. 7B is a cross-sectional view taken along line X-Y in
FIG. 7A.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0055] Hereinafter the present invention will be described with
reference to FIGS. 1A to 5, 7A and 7B. As used herein, a
"horizontal direction" refers to a direction which is parallel to
the surface of a given semiconductor substrate, whereas a "vertical
direction" refers to a direction perpendicular to the surface of a
given semiconductor substrate. An "upper face" refers to the face
of a given layer on which its crystal growth occurs; accordingly,
the direction of such growth will be expressed by the word "above"
or "over". Conversely, a "lower face" and "below" or "under" imply
the opposite face or direction, respectively, of the above.
[0056] As used herein, the term "island-like" is employed to mean
that a region which is described as "island-like" composes a
discrete portion of an element, the portion being geometrically
isolated from the remainder of the element.
[0057] Japanese Laid-Open Publication No. 11-68144 discloses
another attempt at employing a metal light-shielding film in an
InGaAs/InP type compound semiconductor pin photodiode (hereinafter
referred to as "Comparative Example"). FIG. 7A is a plan view of a
compound semiconductor pin photodiode (photo-detecting device) 700
of Comparative Example. FIG. 7B is a cross-sectional view taken
along line X-Y in FIG. 7A.
[0058] With reference to FIGS. 7A and 7B, the structure of the
compound semiconductor pin photodiode 700 of Comparative Example
will be described.
[0059] A low concentration n-InGaAs light absorption layer 82 and a
low concentration n-InP window layer 83 are laminated in this order
on an n-InP semiconductor substrate 81. In the window layer 83, an
island-like diffusion region 84, in which a p-type impurity (e.g.,
Zn) is diffused, is formed. An annular negative electrode 85 is
formed on the diffusion region 84. An insulative layer 86 is
deposited on portions of the window layer 83 other than the
diffusion region 84. A pad 87 is formed on the insulative film 86.
The negative electrode 85 and the pad 87 are electrically connected
via wiring 88 formed on the insulative film 86. A light-shielding
film 89 is formed on the insulative film 86 so as to surround the
diffusion region 84 without overlapping the wiring 88. The pad 87,
wiring 88, and light-shielding film 89 are obtained by patterning a
thin metal film which is simultaneously vapor-deposited. The
negative electrode 85 is also formed of the same thin metal film. A
positive electrode 90 is formed on the back face of the
semiconductor substrate 81 through vapor deposition.
[0060] In Comparative Example described above with reference to
FIGS. 7A and 7B, the wiring 88 is employed to electrically connect
the negative electrode 85 on the diffusion region 84 to the pad 87,
which is located away from the negative electrode 85. The
photo-detecting device 700 of Comparative Example includes a
minimum interspace between the wiring 88 and the light-shielding
film 89, which surrounds the diffusion region 84, while permitting
a large interspace between the pad 87 and the light-shielding film
89. As a result, the short-circuiting between the pad and the
light-shielding film during a bonding step, which is one problem
associated with Conventional Example, is overcome by Comparative
Example. The structure of Comparative Example is based on the
concept that the interspace between the pad 87 and the
light-shielding film 89 does not need to be extremely small because
the pad is located away from the actual photosensitive diffusion
region.
[0061] However, in practice, a trace amount of a tail current may
be generated in the interspaces which are not shielded from light
(hereinafter referred to as "non-light-shielded regions") even in
the structure of Comparative Example.
[0062] Specifically, under the conditions that a photosensitive
diffusion region has a diameter of about 100 .mu.m; the chip size
is about 500 .mu.m.times.about 300 .mu.m: and a low concentration
n-InGaAs light absorption layer has a carrier density of about
1.0.times.10.sup.14 cm.sup.-3 to about 5.0.times.10.sup.14
cm.sup.-3, a tail current which is equivalent to about {fraction
(1/100)} of the intended photo-sensitive response can be observed
when light is incident on an end portion which is located at a
distance of about 250 .mu.m from the center of the photo-detecting
region of the chip. A tail current of that magnitude may not be
negligibly small depending on how the photo-detecting device is
used. Therefore, in order to completely prevent the generation of a
tail current, it is necessary to completely shield the surface of
the photo-detecting device from light, excluding the
photo-detecting region, but including end portions of the chip.
[0063] Furthermore, as mentioned above, a compound semiconductor
pin photodiode having a metal light-shielding film requires more
precise micro-processing techniques than a silicon pin photodiode
having a metal light-shielding film because a depletion layer in a
compound semiconductor pin photodiode is narrower than a depletion
layer in a silicon pin photodiode, so that it is necessary to
dispose the light-shielding film to be closer to the
photo-detecting region. It is also necessary to ensure that no
parasitic capacitance is generated between the light-shielding film
and any annular electrodes which may be formed at an edge portion
of the photo-detecting region.
EXAMPLE 1
[0064] First, the structure of a photo-detecting device 100
according to the present invention will be described with reference
to FIGS. 1A to 1C.
[0065] FIG. 1A(a) is a plan view of the photo-detecting device 100
according to Example 1 of the present invention. FIG. 1A(b) is a
cross-sectional view taken along line X-X' in FIG. 1A(a). FIG. 1B
is a cross-sectional view taken along line Y-Y' in FIG. 1A(a).
[0066] In accordance with the photo-detecting device 100 of the
present invention, a low-concentration n-InGaAs light absorption
layer 2 and a low-concentration n-InP window layer 3 are laminated,
in this order, on an n-InP semiconductor substrate 1. An
island-like diffusion region 4, in which a p-type impurity (e.g.,
Zn) is diffused, is formed in the window layer 3. A region of the
light absorption layer 2 underlying the diffusion region 4 defines
a photo-detecting region 14. An annular negative electrode 5 is
formed on the diffusion region 4. On the portions of the window
layer 3 other than the diffusion region 4, a lower metal film 10,
formed of a lamination film of, e.g., Cr/Pt/Au (having thicknesses
of about 50 nm/about 100 nm/about 200 nm, respectively), is
provided so as not to adjoin the diffusion region 4. Furthermore,
an insulative film 6 is formed so as to cover the window layer 3
and the lower metal film 10. A pad 7 is formed on the insulative
film 6. The negative electrode 5 and the pad 7 are electrically
connected via wiring 8 formed on the insulative film 6. An upper
metal film 9 is formed on the insulative film 6 so as to surround
the diffusion region 4 without overlapping the wiring 8. The
negative electrode 5, pad 7, wiring 8, and upper metal film 9 are
simultaneously obtained by patterning a thin metal film (e.g.,
Ti/Pt/Au having thicknesses of about 50 nm, about 100 nm, and about
200 nm, respectively) which is vapor-deposited. The upper metal
film 9 and the lower metal film 10 serve as light-shielding
masks.
[0067] In FIG. 1A, the negative electrode 5, the pad 7, the wiring
8, and the upper metal film 9, which are formed from the same thin
metal film, are hatched with oblique lines which descend toward the
left side of FIG. 1A. Conversely, the lower metal film 10 is
hatched with oblique lines which descend toward the right side of
FIG. 1A. The cross-hatched portions represent areas in which both
the two metal layers overlap. In order to facilitate the
understanding of FIG. 1A, FIG. 1C is provided where (a) only a
pattern of the concurrently vapor-deposited negative electrode 5,
pad 7, wiring 8, and upper metal film 9 is shown; and (b) only a
pattern of the lower metal film 10 is shown.
[0068] As shown in FIGS. 1A and 1B, an opening 11 is formed in the
insulative film 6 so as to correspond to a portion of the
overlapped areas between the upper metal film 9 and the lower metal
film 10 (i.e., a portion of the cross-hatched areas in FIG. 1A).
The upper metal film 9 electrically contacts with the lower metal
film 10 through the opening 11. An end portion 12, defined by the
outer periphery of the upper face of the photo-detecting device
100, is shielded from light only by the lower metal film 10. That
is, the insulative film 6 and the upper metal film 9 are not formed
on the end portion 12.
[0069] A positive electrode 13 is formed on the back face of the
semiconductor substrate 1.
[0070] In the photo-detecting device 100 structure as described
above, it is preferable that the insulative film 6 is deposited in
the form of a lamination of an SiN layer (thickness: about 30 nm)
and an SiO.sub.2 layer (thickness: about 500 nm) because an SiN
layer provides a passivation effect by reducing the dark current in
the photo-detecting device, while the SiO.sub.2 layer, having a
lower dielectric constant than that of the SiN layer, reduces the
interlayer capacitance.
[0071] Next, a method for producing the photo-detecting device 100
of the present invention will be described with reference to FIGS.
2A to 2D.
[0072] First, as shown in FIG. 2A, the light absorption layer 2 and
the window layer 3 are grown, in this order, on the semiconductor
substrate 1 by a VPE (vapor phase epitaxy) method, an MOCVD
(metal-organic chemical vapor deposition) method, or the like.
Thereafter, an impurity is diffused so as to form an island-like
diffusion region 4 in the window layer 3. Next, as shown in FIG.
2B, a lamination film of Cr/Pt/Au is consecutively vapor-deposited
on the window layer 3, and patterned by a lift-off method to form
the lower metal film 10. After the insulative film 6 is deposited,
the insulative film 6 is patterned through etching with an HF
solution or the like as shown in FIG. 2C. This process leaves
exposed an upper portion of the diffusion region 4 and forms the
opening 11. Next, a lamination film of Ti/Pt/Au is consecutively
vapor-deposited, and simultaneously patterned by a lift-off method
into the negative electrode 5, the wiring 8, the pad 7, and the
upper metal film 9, as shown in FIG. 2D. Finally, the positive
electrode 13 is formed on the back face of the semiconductor
substrate 1, thus producing the photo-detecting device 100
according to the present invention, as shown in FIG. 1A(b).
[0073] According to the present invention, two layers are employed
as a light-shielding film or mask, i.e., the upper metal film 9 and
the lower metal film 10. As described above, the upper metal film 9
is formed of the same thin metal film as the negative electrode 5
above the photo-detecting region 14, the wiring 8 (which leads out
from the negative electrode 5 as shown in FIG. 1A(b)) and the pad 7
upon the insulative film 6. Therefore, the same photomask can be
used to process the negative electrode 5, the wiring 8, the pad 7,
and the upper metal film 9, which makes it possible to accurately
determine the distance between the negative electrode 5 and the
upper metal film 9, without being affected by mask alignment
accuracy. Consequently, even if the actual distance between the
resultant negative electrode 5 and upper metal film 9 is smaller
than its designed value, this structure can prevent the occurrence
of parasitic capacitance or short-circuiting therebetween.
[0074] On the other hand, an interspace may preferably be provided
between the pad 7 and the upper metal film 9 in order to prevent
short-circuiting therebetween during a bonding step. However, the
interspace, which is provided between the pad 7 and the upper metal
film 9 for the aforementioned purpose, is shielded from light by
the lower metal film 10 according to the present example. This
effectively prevents the generation of electron-hole pairs, and
hence a tail current, in the portion of the light absorption layer
2 underlying the aforementioned interspace.
[0075] According to the present example, it is particularly
important to ensure that the lower metal film 10 does not adjoin
the photo-detecting region 14 because the negative electrode 5
above the photo-detecting region 14 and the lower metal film 10 are
processed by using respectively different masks.
[0076] Specifically, the distance between the negative electrode 5
and the lower metal film 10 may become extremely small depending on
the mask alignment accuracy. As described above, the upper metal
film 9, which is patterned from the same thin metal film as the
negative electrode 5, the wiring 8, and the pad 7, serves to
provide light-shielding effects in the vicinity of the
photo-detecting region 14. On the other hand, the lower metal film
10 is formed by using a different photomask, and serves to provide
light-shielding effects in the peripheral portion of the upper face
of the photo-detecting device 100, particularly under the pad 7,
and most importantly the interspace between the pad 7 and the upper
metal film 9.
[0077] Although the insulative film 6 is provided between the upper
metal film 9 and the lower metal film 10, there is no need to
electrically insulate the upper metal film 9 from the lower metal
film 10. In fact, the upper metal film 9 is in electrical contact
with the lower metal film 10 via the opening 11 in the insulative
film 6. In accordance with this structure, both the upper metal
film 9 and the lower metal film 10 can have the same potential as
that of the semiconductor substrate 1. As a result, no floating
capacitance is generated between the upper metal film 9/lower metal
film 10 and the semiconductor substrate 1. The capacitance
component generated between the wiring 8/pad 7 and the
semiconductor substrate 1 is slightly increased because now an MIM
(metal-insulator-metal) capacitance component exists due to the
insertion of the lower metal film 10, as opposed to an MIS
(metal-insulator-semicon- ductor) capacitance component. However,
such a slight increase in the capacitance value is negligible
against the overall capacitance value of the device.
[0078] Furthermore, the end portion 12 is shielded from light only
by the lower metal film 10. In other words, the insulative film 6
and the upper metal film 9 are not formed over the end portion
12.
[0079] The end portion 12 defines a so-called scribe lane which is
utilized at the time when a semiconductor wafer is split into
discrete chips. In general, a scribe lane which is provided at an
end portion of a semiconductor substrate having semiconductor
elements formed thereon serves as a margin for splitting (i.e.,
"scribing") the semiconductor wafer into discrete chips. As will be
appreciated, scribing becomes difficult if a thick insulative or
metal film exists on a scribe lane. Performing a scribing in the
presence of such films may result in an irregular chip end shape,
or cause the insulative or metal film to crack or peel, for
example. According to the present invention, however, the
insulative film 6 and the upper metal film 9 are not formed over
the end portion 12, thereby overcoming such problems.
[0080] Since the lower metal film 10 is directly vapor-deposited on
the window layer 3 for the purpose of light shielding, the lower
metal film 10 does not need to be thick. Therefore, the lower metal
film 10 existing on the end portion 12 does not present any
problems in scribing.
[0081] In accordance with the method of the present invention, the
photo-detecting device 100 is produced by performing the following
steps in the order presented: a step of forming the diffusion
region 4 through impurity diffusion; a step of forming the lower
metal film 10 through vapor deposition; a step of forming the
insulative film 6 through deposition; and a step of forming the
upper metal film 9 through vapor deposition. The only additional
step included in the method according to the present invention, as
compared to a conventional method for producing compound
semiconductor pin photodiode, is the step of forming the lower
metal film 10 through vapor deposition. Thus, the inventive method
only entails a minimum increase (i.e., one step) in the number of
steps as compared to the conventional method.
[0082] The lower metal film 10 may be composed of a film of an
Au/Sn alloy or a Ti/Pt/Au lamination film, for example. However, as
illustrated in the present embodiment, a Cr/Pt/Au lamination film
is particularly preferable for the following reason.
[0083] Since the lower metal film 10 is directly vapor-deposited on
a semiconductor layer (i.e., the window layer 3 according to the
present example), it is unpreferable to form the lower metal film
10 from a metal material (e.g., a film of an Au/Sn alloy) which may
form an alloy with a compound semiconductor layer (e.g., InP)
because it might reduce the smoothness of the interface between the
lower metal film 10 and the semiconductor layer. On the other hand,
Ti and Cr are representative metals which do not form an alloy with
a compound semiconductor layer such as InP. However, a lower metal
film 10 formed of a Ti/Pt/Au lamination film would allow the Ti
component within the lower metal film 10 to be side-etched during
the step of forming the opening 11 by etching the insulative film 6
with an HF solution, so that the lower metal film 10 might peel
off. Accordingly, a Cr/Pt/Au lamination film is particularly
preferable because a lower metal film 10 composed of a Cr/Pt/Au
lamination film prevents such side-etching and hence peeling
thereof. Furthermore, the positive electrode 13 may also be
composed of a Cr/Pt/Au lamination film.
[0084] Alternatively, the lower metal film 10 may also be composed
of a signal layer of Cr. However again, a Cr/Pt/Au lamination film
is particularly preferable because the Au layer can prevent
oxidation of the Cr layer, and the Pt layer further assists in the
prevention of alloying between the Au layer and the semiconductor
layer, as compared to the case of composing the lower metal film 10
only of a signal layer of Cr.
[0085] The characteristics of the photo-detecting device 100
according to the present invention will now be described.
[0086] The magnitude of the tail current greatly depends on the
module structure which defines how much light is incident on
regions other than the photo-detecting region 14. Accordingly, the
inventors measured the incident position dependency of the
photosensitivity of the photo-detecting devices as one parameter
determining the chip characteristics, which is shown in the graph
of FIG. 3B. As would be understood from the mechanism for
generating the tail current, the tail current increases as the
sensitivity with which regions other than the photo-detecting
region 14 responds to signal light increases.
[0087] For comparison, as shown in the graph of FIG. 3A, the
incident position dependency of photosensitivity was measured for
two comparative photo-detecting devices, i.e., one which was
produced in a manner similar to the photo-detecting device 100 of
Example 1 except for lacking the lower metal film 10 (indicated by
the solid line), and one which was produced in a manner similar to
the photo-detecting device 100 of Example 1 except for lacking both
the upper metal film 9 and the lower metal film 10, thereby
completely omitting light-shielding masks (indicated by the broken
line).
[0088] With reference to FIG. 3A, a range within .+-.50 .mu.m from
the chip center (center of the photo-detecting device) defines a
photo-detecting region for each comparative photo-detecting device.
Both comparative photo-detecting devices exhibited about 0.9 A/W of
photosensitivity in their photo-detecting regions. In the
comparative photo-detecting device which completely lacked
light-shielding films (shown by the broken line in FIG. 3A), the
photosensitivity in the region outside the photo-detecting region
slightly decreased, resulting in a sensitivity of about 0.01 A/W or
more at the chip end portion. On the other hand, in the comparative
photo-detecting device whose only light-shielding film was the
upper metal film 9 (shown by the solid line in FIG. 3A), the
photosensitivity in the region outside the photo-detecting region
drastically decreased. However, the regions which were not covered
by the upper metal film 9 (corresponding to the region equal to or
below about -200 .mu.m and the region equal to or above about +100
.mu.m) showed a photosensitivity as high as that of the comparative
photo-detecting device which completely lacked any light-shielding
films.
[0089] On the other hand, FIG. 3B illustrates the characteristics
of the photo-detecting device 100 according to the present example,
which incorporates both the upper metal film 9 and the lower metal
film 10 as light-shielding masks. The photo-detecting device 100
also shows about 0.9 A/W of photosensitivity in the photo-detecting
region 14. However, the photosensitivity of the photo-detecting
device 100 decreases to be equal to or below about 0.01 A/W
immediately outside the photo-detecting device 100. According to
the present invention, the upper face of the photo-detecting device
100 is substantially completely shielded from light in regions
other than the photo-detecting region 14, so that the
photosensitivity there is prevented from increasing again.
According to the present example, the photosensitivity is reduced
to be equal to or below about 0.001 A/W in regions about .+-.100
.mu.m away from the chip center, indicative of a sufficient
reduction in the tail current.
[0090] FIG. 4 illustrates the tail current characteristics of a
photo-detecting device which completely lacks light-shielding films
(.largecircle.), and the tail current characteristics of the
photo-detecting device 100 according to the present example
(incorporating both the upper metal film 9 and the lower metal film
10 as light-shielding masks) (.circle-solid.), after being mounted
in an appropriate module structure. The measurements were taken
while ensuring that the center of the incident light beam was
substantially aligned with the center of the photo-detecting
region. The vertical axis represents tail current values, and the
horizontal axis represents the elapsed time since the signal light
is turned off. The tail current values are expressed as relative
values based on a current value (=1 (i.e., 0 dB)) under the
condition that signal light is incident on the device.
[0091] As shown in FIG. 4, the photo-detecting device which
completely lacked light-shielding films (.largecircle.) exhibited a
tail current value which was equal to or above about -30 dB (i.e.,
{fraction (1/1000)}) of the signal photocurrent even after about
500 ns following the termination of the signal light. On the other
hand, the tail current value of the photo-detecting device 100
according to the present example (.circle-solid.) was already
decreased to about -30 dB after about 80 ns following the
termination of the signal light. Thus, the tail current is reduced
in a very short time according to the present invention.
[0092] The tail current characteristics (not shown) of a
conventional photo-detecting device only incorporating an upper
metal film as a light-shielding film would be expected to show
intermediate values between the characteristic values of the
inventive photo-detecting device 100 and the conventional
photo-detecting device illustrated in the graph of FIG. 4, although
it some variation depending on the optical coupling accuracy of the
module would occur. That is, such a conventional photo-detecting
device will exhibit similar characteristics to the photo-detecting
device 100 according to the present example (incorporating two
light-shielding films) so long as the center of the incident light
beam is accurately aligned with the center of the photo-detecting
region: however, as the alignment offset between the
photo-detecting region and the light-shielding film increases, the
characteristics will become similar to those obtained under the
complete absence of both light-shielding films.
[0093] As described above, according to the present example, there
is provided a photo-detecting device in which a tail current is
sufficiently reduced, as well as a method for producing such a
photo-detecting device.
EXAMPLE 2
[0094] Next, a photo-detecting device 200 according to Example 2 of
the present invention will be described with reference to FIGS. 5A
and 5B.
[0095] FIG. 5A is a plan view of the photo-detecting device 200
according to Example 2 of the present invention. FIG. 5B is a
cross-sectional view taken along line X-X' in FIG. 5A. Those
constituent elements which have already been discussed in Example 1
are denoted by like numerals.
[0096] First, the structure of the photo-detecting device 200 will
be described with reference to FIGS. 5A and 5B.
[0097] In accordance with the photo-detecting device 200 of the
present invention, a low-concentration n-InGaAs light absorption
layer 2 and a low-concentration n-InP window layer 3 are laminated,
in this order, on an n-InP semiconductor substrate 1. An
island-like diffusion region 4, in which a p-type impurity (e.g.,
Zn) is diffused, is formed in the window layer 3. A region of the
light absorption layer 2 underlying the diffusion region 4 defines
a photo-detecting region 14. An annular negative electrode 5 is
formed on the diffusion region 4. On the portions of the window
layer 3 other than the diffusion region 4, a lower metal film 10,
formed of a lamination film of, e.g., Cr/Pt/Au (having thicknesses
of about 50 nm, about 100 nm, and about 200 nm, respectively), is
provided so as not to adjoin the diffusion region 4. Furthermore,
an insulative film 6 is formed so as to cover the window layer 3
and the lower metal film 10. A pad 7 is formed on the insulative
film 6. The negative electrode 5 and the pad 7 are electrically
connected via wiring 8 formed on the insulative film 6. An upper
metal film 9 is formed on the insulative film 6 so as to surround
the diffusion region 4 without overlapping the wiring 8. The
negative electrode 5, pad 7, wiring 8, and upper metal film 9 are
obtained by patterning a thin metal film (e.g., Ti/Pt/Au having
thicknesses of about 50 nm, about 100 nm, and about 200 nm,
respectively) which is simultaneously vapor-deposited. The upper
metal film 9 and the lower metal film 10 serve as light-shielding
masks. Thus, the photo-detecting device 200 shares the same
fundamental structure with the photo-detecting device 100 according
to Example 1.
[0098] In FIG. 5A, the negative electrode 5, the pad 7, the wiring
8, and the upper metal film 9, which are formed from the same thin
metal film, are hatched with oblique lines which descend toward the
left side of the figure. On the other hand, the lower metal film 10
is hatched with oblique lines which descend toward the right side
of the figure. The cross-hatched portions represent areas in which
both the two metal layers overlap.
[0099] According to the present example, as shown in FIG. 5A,
positioning marks 18, which are not shielded from light by either
the upper metal film 9 or the lower metal film 10, are formed in
the four corners of the photo-detecting device 200 (or, more
precisely, the window layer 3). As shown in FIG. 5B, a contact hole
17 is formed where the window layer 3 and the light absorption
layer 2 are removed. A portion of the upper metal film 9 and a
portion of the lower metal film 10 extend into the contact hole 17.
The portion of the lower metal film 10 formed in the contact hole
17 serves as a positive electrode 13. Furthermore, a back face
metal film 16 is vapor-deposited on the back face of the
semiconductor substrate 1, and side face metal films 15 are
vapor-deposited on the side faces of the photo-detecting device
200.
[0100] Next, a method for producing the photo-detecting device 200
of the present invention will be described.
[0101] First, in a manner similar to Example 1, the light
absorption layer 2 and the window layer 3 are grown, in this order,
on the semiconductor substrate 1 by a VPE method, an MOCVD method,
or the like. Thereafter, an impurity is diffused so as to form an
island-like diffusion region 4 in the window layer 3. Next, the
window layer 3 and the light absorption layer 2 are partially
etched away so as to form the contact hole 17. Then, the lower
metal film 10, the insulative film 6, the negative electrode 5, the
wiring 8, the pad 7, and the upper metal film 9 are formed through
vapor deposition. Furthermore, the back face metal film 16 and the
side face metal films 15 are vapor-deposited. One method for
simultaneously forming the back face metal film 16 and the side
face metal films 15 may be to adhere the upper face of the
substrate to an adhesive sheet, scribe the substrate from the back
face in this state, expand the adhesive sheet so as to produce
interspaces between discrete chips, and thereafter vapor-deposit a
metal on the back face as well as the side faces of the discrete
chips.
[0102] The present example provides, on the basis of Example 1, a
more specific photo-detecting device structure which is
particularly suitable for flip-chip bonding.
[0103] In general, the photo-detecting region is usually circular
as in the present example as well as in the foregoing example.
However, it is difficult to utilize a circular photo-detecting
region for alignment purposes. Even if positioning marks for
alignment purposes are formed in regions other than the
photo-detecting region, such positioning marks may not be
recognizable with high contrast in the case where the entirety of
the positioning marks are covered by an overlying metal film. In
particular, an automatic pattern recognizer apparatus may have
great difficulties in recognizing such covered positioning
marks.
[0104] On the contrary, in the photo-detecting device 200 according
to the present example, the positioning marks 18 which are provided
in the periphery of the upper face are not shielded from light by
either the upper metal film 9 or the lower metal film 10. As a
result, an automatic pattern recognizer apparatus can be
conveniently employed for alignment purposes when subjecting the
photo-detecting device 200 to a flip-chip bonding process. The size
of the positioning marks 18 is preferably minimized so as not to
affect the tail current characteristics of the photo-detecting
device 200 while being recognizable by an automatic recognizer
apparatus.
[0105] According to the present example, virtually the entire upper
face of the photo-detecting device 200, excluding the central
portion of the diffusion region 4 above the semiconductor substrate
1 and the positioning marks 18, is shielded from light by the upper
metal film 9 and/or the lower metal film 10. In accordance with
this structure, a tail current can be effectively minimized, and
accurate positioning can be achieved during a flip-chip bonding
process.
[0106] Furthermore, in the case where the photo-detecting device
200 according to the present example is subjected to a flip-chip
bonding process, it is necessary to form a negative electrode and a
positive electrode on the upper face of the photo-detecting device
200. According to the present example, the contact hole 17 is
formed in which the window layer 3 and the light absorption layer 2
are partially removed, so that a portion of the lower metal film 10
extends into the contact hole 17. As a result, the lower metal film
10 can also function as the positive electrode 13, which makes it
possible to reduce the number of production steps.
[0107] In addition, in the case where the photo-detecting device
200 according to the present example is subjected to a flip-chip
bonding process, there is no need to form an electrode on the back
face of the semiconductor substrate 1 because the negative
electrode 5 and the positive electrode 13 are formed on the upper
face of the photo-detecting device 200, as described above.
However, certain photo-detecting device module structures may allow
stray light to enter through the back face of the semiconductor
substrate, possibly causing a tail current. Accordingly, even
though it may be unnecessary to form electrodes on the back face of
the semiconductor substrate because the negative electrode 5 and
the positive electrode 13 are formed on the upper face of the
photo-detecting device 200, the back face metal film 16 may
advantageously be formed on the back face of the semiconductor
substrate for preventing such stray light from entering through the
substrate, whereby the generation of a tail current is
prevented.
[0108] Similarly, any stray light which would otherwise enter the
photo-detecting device 200 through the side faces thereof can be
effectively blocked by the side metal films 15 on the side faces of
the photo-detecting device 200, whereby the generation of a tail
current is prevented.
[0109] Although the present example illustrates a case where the
back face metal film 16 and the side face metal films 15 are
incorporated, they only need to be adopted as necessary. For
example, either one of the back face metal film 16 or the side face
metal films 15 may be incorporated, or both may be omitted.
[0110] The compound semiconductor materials to be used in Examples
1 and 2 are not limited to those described above. For example, GaAs
may be used as the substrate material; GaAs may be used as the
buffer layer material; GaInNAs may be used as the light absorption
layer material; AlGaAs may be used as the window layer material;
GaAs may be used as the capping layer material. Furthermore, the
present invention is not limited to compound semiconductor pin
photodiodes but can also be applied to silicon pin photodiodes or
other photo-detecting devices.
[0111] Thus, the present invention provides a photo-detecting
device which is capable of fast photo-sensitive response and in
which the generation of a tail current is effectively controlled by
the use of a light-shielding mask, such that a pad and the
light-shielding film are prevented from short-circuiting during a
wire bonding or flip-chip bonding step, and a photo-detecting
device which is capable of greatly reducing the tail current
because the surface of the photo-detecting device excluding a
photo-detecting region is shielded from light all the way to end
portions of the device surface, while preventing the device
capacitance of the photo-detecting device from increasing due to
the incorporation of the light-shielding mask.
[0112] Moreover, the present invention provides a method for easily
producing a photo-detecting device in which the generation of a
tail current is minimized, while entailing a minimum increase in
the number of production steps as compared to conventional methods
for producing photo-detecting devices.
[0113] Various other modifications will be apparent to and can be
readily made by those skilled in the art without departing from the
scope and spirit of this invention. Accordingly, it is not intended
that the scope of the claims appended hereto be limited to the
description as set forth herein, but rather that the claims be
broadly construed.
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