U.S. patent application number 09/848715 was filed with the patent office on 2002-02-07 for electronic device including langasite structure compound and method for making such devices.
This patent application is currently assigned to Crystal Photonics, Incorporated. Invention is credited to Chai, Bruce H.T., Chou, Mitch M.C., Jen, Shen, Qiu, Haihong.
Application Number | 20020015452 09/848715 |
Document ID | / |
Family ID | 26896744 |
Filed Date | 2002-02-07 |
United States Patent
Application |
20020015452 |
Kind Code |
A1 |
Chai, Bruce H.T. ; et
al. |
February 7, 2002 |
Electronic device including langasite structure compound and method
for making such devices
Abstract
An electronic device includes a piezoelectric layer formed of an
ordered Langasite structure compound having the formula
A.sub.3BC.sub.3D.sub.2E.s- ub.14 wherein A is strontium, B is
niobium, C is gallium, D is silicon, and E is oxygen. At least one
electrode is connected to the piezoelectric layer and may be
configured to define a device, such as a SAW resonator or filter,
or a BAW resonator or filter. The ordered Langasite structure
compound may have a substantially perfectly ordered structure.
Inventors: |
Chai, Bruce H.T.; (Oviedo,
FL) ; Chou, Mitch M.C.; (Sanford, FL) ; Qiu,
Haihong; (Oviedo, FL) ; Jen, Shen; (Lake Mary,
FL) |
Correspondence
Address: |
ALLEN, DYER, DOPPELT, MILBRATH & GILCHRIST P.A.
1401 CITRUS CENTER 255 SOUTH ORANGE AVENUE
P.O. BOX 3791
ORLANDO
FL
32802-3791
US
|
Assignee: |
Crystal Photonics,
Incorporated
2729 N. Financial Court
Sanford
FL
32773
|
Family ID: |
26896744 |
Appl. No.: |
09/848715 |
Filed: |
May 3, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60201435 |
May 3, 2000 |
|
|
|
Current U.S.
Class: |
375/316 |
Current CPC
Class: |
H03H 9/56 20130101; H03H
9/02039 20130101; H03H 9/64 20130101; H03H 9/0259 20130101 |
Class at
Publication: |
375/316 |
International
Class: |
H03K 009/00; H04L
027/06; H04L 027/14; H04L 027/22 |
Claims
That which is claimed is:
1. An electronic device comprising: a piezoelectric layer
comprising an ordered Langasite structure compound having the
formula A.sub.3BC.sub.3D.sub.2E.sub.14, wherein A is strontium, B
is niobium, C is gallium, D is silicon, and E is oxygen; and at
least one electrode connected to said piezoelectric layer.
2. An electronic device according to claim 1 wherein said ordered
Langasite structure compound has a substantially perfectly ordered
structure.
3. An electronic device according to claim 1 wherein said at least
one electrode comprises a plurality of electrodes configured so
that the electronic device is a resonator.
4. An electronic device according to claim 3 wherein said plurality
of electrodes are connected to a same face of said piezoelectric
layer so that the electronic device is a surface acoustic wave
(SAW) resonator.
5. An electronic device according to claim 4 wherein said plurality
of electrodes comprises first and second interdigitated
electrodes.
6. An electronic device according to claim 3 wherein said plurality
of electrodes comprises first and second electrodes connected to
respective opposing first and second faces of said piezoelectric
layer so that the electronic device is a bulk acoustic wave (BAW)
resonator.
7. An electronic device according to claim 1 wherein said at least
one electrode comprises a plurality of pairs of electrodes
configured so that the electronic device is a filter.
8. An electronic device according to claim 7 wherein each of said
plurality of pairs of electrodes comprises first and second
interdigitated electrodes.
9. An electronic device according to claim 7 wherein said plurality
of pairs of electrodes are connected to a same face of said
piezoelectric layer so that the electronic device is a surface
acoustic wave (SAW) filter.
10. An electronic device according to claim 7 wherein said
plurality of pairs of electrodes comprises first and second pairs
of electrodes connected to respective opposing first and second
faces of said piezoelectric layer so that the electronic device is
a bulk acoustic wave (BAW) filter.
11. An electronic device according to claim 1 wherein said ordered
Langasite structure compound is producible using a melt pulling
crystal growth technique.
12. An electronic device according to claim 1 wherein said ordered
Langasite structure compound has a relatively high thermally
stability.
13. An electronic device according to claim 1 wherein components of
said ordered Langasite structure compound have congruent melting
properties.
14. An electronic device comprising: a piezoelectric layer
comprising an ordered Langasite structure compound having the
formula Sr.sub.3NbGa.sub.3Si.sub.2O.sub.14; and a plurality of
electrodes connected to said piezoelectric layer and configured so
that the electronic device is a resonator.
15. An electronic device according to claim 14 wherein said ordered
Langasite structure compound has a substantially perfectly ordered
structure.
16. An electronic device according to claim 14 wherein said
plurality of electrodes are connected to a same face of said
piezoelectric layer so that the electronic device is a surface
acoustic wave (SAW) resonator.
17. An electronic device according to claim 16 wherein said
plurality of electrodes comprises first and second interdigitated
electrodes.
18. An electronic device according to claim 14 wherein said
plurality of electrodes comprises first and second electrodes
connected to respective opposing first and second faces of said
piezoelectric layer so that the electronic device is a bulk
acoustic wave (BAW) resonator.
19. An electronic device comprising: a piezoelectric layer
comprising an ordered Langasite structure compound having the
formula Sr.sub.3NbGa.sub.3Si.sub.2O.sub.14; and a plurality of
pairs of electrodes connected to said piezoelectric layer and
configured so that the electronic device is a filter.
20. An electronic device according to claim 19 wherein said ordered
Langasite structure compound has a substantially perfectly ordered
structure.
21. An electronic device according to claim 19 wherein each of said
plurality of pairs of electrodes comprises first and second
interdigitated electrodes.
22. An electronic device according to claim 19 wherein said
plurality of pairs of electrodes are connected to a same face of
said piezoelectric layer so that the electronic device is a surface
acoustic wave (SAW) filter.
23. An electronic device according to claim 19 wherein said
plurality of pairs of electrodes comprises first and second pairs
of electrodes connected to respective opposing first and second
faces of said piezoelectric layer so that the electronic device is
a bulk acoustic wave (BAW) filter.
24. A method for making an electronic device comprising: providing
a piezoelectric layer comprising an ordered Langasite structure
compound having the formula A.sub.3BC.sub.3D.sub.2E.sub.14, wherein
A is strontium, B is niobium, C is gallium, D is silicon, and E is
oxygen; and connecting at least one electrode to the piezoelectric
layer.
25. A method according to claim 24 wherein the ordered Langasite
structure compound has a substantially perfectly ordered
structure.
26. A method according to claim 24 wherein connecting at least one
electrode comprises connecting a plurality of electrodes configured
so that the electronic device is a resonator.
27. A method according to claim 26 wherein connecting the plurality
of electrodes comprises connecting the electrodes to a same face of
the piezoelectric layer so that the electronic device is a surface
acoustic wave (SAW) resonator.
28. A method according to claim 26 wherein connecting the plurality
of electrodes comprises connecting first and second electrodes to
respective opposing first and second faces of the piezoelectric
layer so that the electronic device is a bulk acoustic wave (BAW)
resonator.
29. A method according to claim 24 wherein connecting the at least
one electrode comprises connecting a plurality of pairs of
electrodes configured so that the electronic device is a
filter.
30. A method according to claim 29 wherein connecting the plurality
of pairs of electrodes comprises connecting the pairs of electrodes
to a same face of the piezoelectric layer so that the electronic
device is a surface acoustic wave (SAW) filter.
31. A method according to claim 29 wherein connecting the plurality
of pairs of electrodes comprises connecting first and second pairs
of electrodes to respective opposing first and second faces of the
piezoelectric layer so that the electronic device is a bulk
acoustic wave (BAW) filter.
32. A method according to claim 24 wherein providing the ordered
Langasite structure compound comprises producing the ordered
Langasite structure compound using a melt pulling crystal growth
technique.
Description
RELATED APPLICATION
[0001] The present application is based upon copending provisional
application Ser. No. 60/201,435 filed on May 3, 2000, the entire
contents of which are incorporated herein by reference.
FIELD OF THE INVENTION
[0002] This invention relates to electronic devices, such as
resonators and filters, and more particularly to such devices
including a Langasite structure compound and associated
methods.
BACKGROUND OF THE INVENTION
[0003] Bulk acoustic wave (BAW) and surface acoustic wave (SAW)
devices are two key components in today's wireless electronic
systems. These devices serve the two major functions of signal
processing and frequency control. The signal processing function
involves filtering of electrical signals which typically have a
frequency ranging from several MHZ up to several GHz and a
fractional passband from as low as less than a few hundredths of a
per-cent up to tens of a per-cent.
[0004] The frequency control function involves generating a precise
clock signal or a frequency source whose frequency ranges between
several MHZ up to several hundred MHZ. Passive BAW and SAW filters
as well as BAW and SAW resonator based clocks and oscillators have
been, and will continue to be, the mainstay for these signal
processing and frequency control applications.
[0005] BAW and SAW filters and resonators are electromechanical
devices operated based upon the piezoelectric effect. The
piezoelectric materials used for BAW and SAW devices are
predominantly of single crystal form. Fundamentally the performance
of acoustic wave devices depends on the piezoelectric crystal's
electromechanical coupling strength, its inherent acoustic loss,
and its temperature stability.
[0006] Another material property of interest for BAW and SAW device
construction is the acoustic velocity. The merit of acoustic
velocity depends on desired application. For example, higher
velocity crystals allow fabrication of devices with higher
operating frequencies. On the other hand, for certain SAW filter
constructions, namely the ones involving classical transversal
filters, a higher velocity crystal substrate may suffer from a
larger required device size.
[0007] The electromechanical coupling strength dictates the
efficiency of energy conversion from electrical to acoustic energy
and vice versa, and is thus important to the device insertion loss.
The inherent acoustic loss also affects the device insertion loss.
Perhaps more importantly the inherent acoustic loss manifests
itself into affecting the fidelity of the BAW and SAW resonators in
the form of the resonance quality factor Q. This has a direct
bearing on the frequency stability of the oscillator constructed
using the resonator. A "material Q factor" has long been recognized
in the field of crystal (BAW) resonators and oscillators, and later
adapted by workers in the SAW resonator field.
[0008] The maximum material Q, established empirically, is
inversely proportional to the device frequency. For a given
piezoelectric material, this corresponds to a constant
Q.sub.max.multidot.f factor. For example, for the commonly used BAW
and SAW crystal cuts:
[0009] (Q.sub.max.multidot.f).sub.BAW=1.6.times.10.sup.13 Hz for AT
and SC cuts
[0010] (Q.sub.max.multidot.f).sub.SAW=1.1.times.10.sup.13 Hz for ST
cut
[0011] The temperature stability of the piezoelectric crystal
dictates how stable, typically in terms of device frequency in
parts per million, an acoustic device performs with changing
ambient temperature.
[0012] The compound Langasite (La.sub.3Ga.sub.5SiO.sub.14, LGS) was
first reported in Russia back in 1980 with a
Ca.sub.3Ga.sub.2Ge.sub.4O.sub.14 type structure. It was found then
to have attractive laser, electromechanical and acoustic
properties. Interest in LGS has grown in recent years for acoustic
device applications. LGS has the same point group (32) symmetry as
quartz. Similar to quartz, it has temperature compensated crystal
orientations suitable for building temperature-stable BAW and SAW
devices.
[0013] In comparison with quartz it has the advantage of higher
electromechanical coupling strength. With a slower acoustic
velocity, it has the potential for miniaturized wideband SAW
filters suitable for hand-held mobile wireless devices, for
example. LGS was also cited for its potential of lower acoustic
loss due to the heavier atomic species of La and Ga, although LGS
actually has higher acoustic loss than quartz due to its disordered
structure.
[0014] Langasite is not unique with these attractive properties. It
is just one crystal belonging to a very large family of crystals
which have the same structure, and which are called the Langasite
family compounds. In fact, compounds within this family typically
have quite similar properties. In other words, they are
non-centro-symmetric and thus piezoelectric. But they do have some
variation due to the difference in composition of each compound.
The constants that can be affected by composition include the
lattice constant, thermal expansion coefficient, acoustic velocity,
dielectric constant, and electromechanical coupling constant, as
well as the temperature coefficients of all these constants. These
variations, in general, are small (within a factor of 2 or less)
but still can have a very significant effect on the device
performance.
[0015] The Langasite structure is very complex for anhydrous
compounds. It has four distinct cation sites. They include three
dodecahedral (Site A), one octahedral (Site B), three large
tetrahedral (Site C) and two small tetrahedral (Site D) sites. Each
site can only accommodate a certain size and charge of the cations.
Even with this constraint, nearly one hundred combinations of the
cation composition are possible within the structure. Each
combination must satisfy the charge neutrality requirement. In
almost all the cases, it is necessary to fit a specific site with
more than one type of element with different ionic charges in order
to satisfy the charge neutrality. This kind of charge balance
process creates disorder for the particular site and thus the whole
crystal.
[0016] For example, LGS has three La ions in the dodecahedral site,
one Ga ion in the octahedral site, three Ga ions in the large
tetrahedral site and finally one Ga ion and one Si ion in the small
tetrahedral sites. The locations of both Ga and Si ions are totally
random (or "disordered") within the smaller tetrahedral site. Since
Ga is 3+ charged and Si is 4+ charged, there is a disorder of ionic
charge. In addition, since Ga and Si have a difference in ionic
size, mass and density, this creates additional disorder in the
lattice of the crystal. Another example is Langanite
(La.sub.3Nb.sub.0.5Ga.sub.5.5O.sub.14, LGN) where the disorder is
located at the single octahedral sites. In this case, half of the
octahedral sites are occupied by Nb ions, and the other half
occupied by Ga ions. Thus the charge difference is even higher than
LGS with Nb 5+ charged and Ga 3+ charged. A third example is CGG
(Ca.sub.3Ga.sub.2Ge.sub- .4O.sub.14). Here the disorder is located
at the large tetrahedral site where 2/3of the sites are occupied by
Ge with a 4+ charge and 1/3of the sites are occupied by Ga with a
3+ charge.
[0017] A fourth example is NSGG (NaSr.sub.2GaGe.sub.5O.sub.14).
Here the disorder is located at the dodecahedral site where 2/3of
the sites are occupied by Sr with a 2+ charge and 1/3of the sites
are occupied by Na with a 1+ charge.
[0018] A fifth example is LSFG
(LaSr.sub.2Fe.sub.3Ge.sub.3O.sub.14). Here the disorder occurs in
two different sites. The first one is the dodecahedral site where
1/3of the sites are occupied by La with a 3+ charge and 2/3of the
sites are occupied by Sr with a 2+ charge. The second one is the
large tetrahedral site where 2/3of the sites are occupied by Fe
with a 3+ charge and 1/3of the sites are occupied by Ge with a 4+
charge.
[0019] Structure disorder may not be a desirable feature for
crystals to be used in certain acoustic and optical applications.
The classic example is glass. Glass is totally disordered from a
structural point of view. Even though it has good optical
transmission, it is not a good laser host because the local
disorder of the lazing element causes non-homogeneous broadening of
the emission and a lower gain cross-section.
[0020] The problem of disorder for acoustic applications is the
typically high acoustic loss. Disorder induces high acoustic
friction due to incoherent phonon scattering. Low acoustic loss
may, however, be a highly desirable property for both resonator and
filter applications. To enhance the crystal performance, it may be
desirable to have a perfectly ordered structure. In other words,
each site in the lattice structure will have only one specific ion
located in it and not a mixture of multiple ions.
[0021] It should be noted that, despite the disordered structure,
high quality single crystal Y-cut Langasite isomorphs LGN and LGT
(La.sub.3Ta.sub.0.5Ga.sub.5.5O.sub.14) have already been
demonstrated to show higher material Q than quartz, with
Q.sub.max.multidot.f product reaching as high as
(Q.sub.max.multidot.f).sub.LGN BAW=2.2.times.10.sup.13Hz and
(Q.sub.max.multidot.f).sub.LGT BAW=2.9.times.10.sup.13 Hz.
[0022] In the case of the Langasite structure compounds,
essentially all the known La containing compositions have disorder
structures in at least one cation site. Some of the examples
include LGS, LGN and LGT. However, there is one exception, LTG
(La.sub.3TiGa.sub.5O.sub.14), which has a totally ordered
structure. This, in fact, may be the most ideal composition for the
La containing Langasite compound from both a structure and
composition point of view. This compound can be synthesized by
solid state sintering reaction and is thermodynamically stable.
[0023] Applicants have tried to grow a single crystal of LTG, but
found that it is not possible to grow it directly from the melt,
because of the reduction of Ti.sup.4+ to Ti.sup.3+ under the growth
conditions where the iridium crucible is stable. As a consequence,
there were not sufficient 4+ charge ions in the melt to produce
LTG.
[0024] Even though charge neutrality may be the most important
factor controlling the composition of Langasite structure
compounds, it is not the only factor. The ionic size and also the
thermal stability should also be considered to make the composition
compatible. The choice of cations to fit into any specific site is
a very difficult task with no guarantee that the selected
combination will work. The reason is that there is not sufficient
data to predict its thermodynamic properties. Unless the selected
composition has the lowest free energy, the compound will not
exist. The only way to prove its existence is to actually
synthesize the compound according to the proposed composition. When
the composition is properly selected, it is possible to fit each
cation into a specific site with a total balance of electric
charge.
[0025] An article by B. V. Mill, et al., "Synthesis, Growth and
Some Properties of Single Crystals with the
Ca.sub.3Ga.sub.2Ge.sub.4O.sub.14 Structure", Proc. 1999 Joint
Meeting EFTF -IEEE IFCS, pp. 829-834 discloses numerous synthesized
Langasite family compositions, among which are the group of
A.sup.2+.sub.3X.sup.5+Y.sup.3+.sub.3Z.sup.4+.sub.2O.sub.- 14, with
A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge. The
article identifies nine individual compounds that are grown
according to the Czochralski technique, and of these only three
were further identified as having a good chance to become
piezoelectric materials for digital mobile communications systems
and other acoustic applications in the 21.sup.st century. These
three materials are La.sub.3Ga.sub.5SiO.sub.- 14,
La.sub.3Nb.sub.0.5Ga.sub.5.5O.sub.14 and La.sub.3
Ta.sub.0.5Ga.sub.5.5O.sub.14.
[0026] An article by H. Takeda, et al., "Synthesis and
Characterization of Sr.sub.3TaGa.sub.3Si.sub.2O.sub.14 Single
Crystals", Material Research Bulletin, vol. 35 (2000), pp. 245-252,
cited previous work of polycrystal STGS by Mill, et al., (Russ.
Jour. Inorg. Chem., vol. 43, p. 1168 (1998), and disclosed the
synthesis and characterization of
Sr.sub.3TaGa.sub.3Si.sub.2O.sub.14 (STGS). The article further
disclosed that STGS resonators were prepared and the piezoelectric
properties thereof were determined.
[0027] Despite continuing development in the area of Langasite
structure compounds for electronic devices, there still exists a
need for further development work to identify and produce such
compounds with desirable properties and that can be used to produce
high frequency electronic devices.
SUMMARY OF THE INVENTION
[0028] In view of the foregoing background, it is therefore an
object of the present invention to provide electronic devices, such
as for signal processing or frequency control applications that
include a piezoelectric layer based on a Langasite structure that
is readily manufacturable and/or which enjoys advantageous
operating characteristics.
[0029] This and other objects, features and advantages in
accordance with the present invention are provided by an electronic
device comprising a piezoelectric layer including an ordered
Langasite structure compound having the formula
A.sub.3BC.sub.3D.sub.2E.sub.14, wherein A is strontium, B is
niobium, C is gallium, D is silicon, and E is oxygen; and at least
one electrode connected to the piezoelectric layer. The ordered
Langasite structure compound may have a substantially perfectly
ordered structure.
[0030] In comparison with the established material of choice
to-date, quartz, the ordered Langasite structure compound of the
present invention enjoys a lower acoustic loss and higher material
Q due, possibly due to the perfect ordering and heavy elements. The
ordered Langasite structure compound may also enjoy a higher
electromechanical coupling factor possibly due to stronger
piezoelectric effect resulting from the crystal structure and Nb or
Ta in the octahedral sites. These factors may be important for high
performance bulk and surface acoustic wave devices, for example.
Furthermore, the crystal symmetry of point group 32 may provide
temperature compensated orientations with which devices can be
manufactured for minimal temperature variation induced frequency
and group delay shifts.
[0031] The at least one electrode may comprise a plurality of
electrodes configured so that the electronic device is a resonator,
for example. The plurality of electrodes may be connected to a same
face of the piezoelectric layer so that the electronic device is a
surface acoustic wave (SAW) resonator. In particular, the plurality
of electrodes may comprise first and second interdigitated
electrodes in some resonator embodiments.
[0032] The plurality of electrodes may also comprise first and
second electrodes connected to respective opposing first and second
faces of the piezoelectric layer so that the electronic device is a
bulk acoustic wave (BAW) resonator.
[0033] In other embodiments of the electronic device, the at least
one electrode may comprise a plurality of pairs of electrodes
configured so that the electronic device is a filter. Each of the
plurality of pairs of electrodes may include first and second
interdigitated electrodes. Moreover, the plurality of pairs of
electrodes may be connected to a same face of the piezoelectric
layer so that the electronic device is a surface acoustic wave
(SAW) filter. In other embodiments, the plurality of pairs of
electrodes may comprise first and second pairs of electrodes
connected to respective opposing first and second faces of the
piezoelectric layer so that the electronic device is a bulk
acoustic wave (BAW) filter.
[0034] The ordered Langasite structure compound may be readily
producible using a melt pulling crystal growth technique,
especially since the components have congruent melting properties.
In addition, the ordered Langasite structure compound may have a
relatively high thermally stability.
[0035] A method aspect of the invention is for making an electronic
device. The method may include providing a piezoelectric layer
comprising an ordered Langasite structure compound having the
formula A.sub.3BC.sub.3D.sub.2E.sub.14, wherein A is strontium, B
is niobium, C is gallium, D is silicon, and E is oxygen; and
connecting at least one electrode to the piezoelectric layer. The
ordered Langasite structure compound may have a substantially
perfectly ordered structure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0036] FIG. 1 is a perspective schematic view of a SAW resonator in
accordance with the present invention.
[0037] FIG. 2 is a perspective schematic view of a SAW filter in
accordance with the present invention.
[0038] FIG. 3 is a perspective schematic view of a BAW resonator in
accordance with the present invention.
[0039] FIG. 4 is a perspective schematic view of a BAW filter in
accordance with the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0040] The present invention will now be described more fully
hereinafter with reference to the accompanying drawings, in which
preferred embodiments of the invention are shown. This invention
may, however, be embodied in many different forms and should not be
construed as limited to the embodiments set forth herein. Rather,
these embodiments are provided so that this disclosure will be
thorough and complete, and will fully convey the scope of the
invention to those skilled in the art. Like numbers refer to like
elements throughout.
[0041] The present invention is directed to electronic devices,
such as for filtering or clock signal generation, for example.
These devices preferably comprise a piezoelectric layer including
an ordered Langasite structure compound having the formula
A.sub.3BC.sub.3D.sub.2E.sub.14 wherein A is strontium, B is
niobium, C is gallium, D is silicon, and E is oxygen. Each device
also preferably includes at least one electrode connected to the
piezoelectric layer. The ordered Langasite structure compound may
have a substantially perfectly ordered structure.
[0042] Briefly, in comparison with the established material of
choice to-date, quartz, the ordered Langasite structure compound of
the present invention enjoys a lower acoustic loss and higher
material Q due, possibly due to the perfect ordering and heavy
elements. The ordered Langasite structure compound may also enjoy a
higher electromechanical coupling factor possibly due to stronger
piezoelectric effect resulting from the crystal structure and Nb in
the octahedral sites. These factors may be important for high
performance bulk and surface acoustic wave devices, for example.
Furthermore, the crystal symmetry of point group 32 may provide
temperature compensated orientations with which devices can be
manufactured for minimal temperature variation induced frequency
and group delay shifts.
[0043] Representative of these electronic devices, for example, are
the SAW resonator 10 (FIG. 1), the SAW filter 20 (FIG. 2), the BAW
resonator 30 (FIG. 3) and the BAW filter 40 (FIG. 4), respectively,
each of which is now described in greater detail starting first
with the SAW resonator. The illustrated SAW resonator 10 includes a
piezoelectric layer 11 formed of one of the ordered Langasite
compounds described herein, and a pair of interdigitated electrodes
12, 13 on an upper face thereof. Passive end reflecting electrodes
14, 15 are also shown in the illustrated embodiment. Of course,
those of skill in the art will recognize other arrangements or
configurations of electrodes defining a SAW resonator as
contemplated by the present invention. Moreover, those of skill in
the art will also appreciate that the SAW resonator 10 can be used
in a number of clock or other precise frequency signal generating
circuits, for example.
[0044] The SAW filter 20 as shown in FIG. 2 again includes a
piezoelectric layer 21 formed of SNGS as described herein. A first
pair of interdigitated electrodes 22a, 23a are illustratively
formed on or connected to the upper face of the layer 21. A second
pair of interdigitated electrodes 22b, 23b are also formed on or
connected to the upper face in spaced relation from the first pair.
In the illustrated embodiment, optional passive end electrodes 24,
25 are also provided. Those of skill in the art will also
appreciate other equivalent configurations of electrodes that will
produce a SAW filter as contemplated by the present invention.
Those of skill in the art will appreciate that the SAW filter 20
can be used in any of a number of high frequency filtering
circuits, such as particularly for those used in portable wireless
communications devices, such as cellular telephones.
[0045] Turning now more specifically to FIGS. 3 and 4, two BAW
devices will now be explained which also advantageously are formed
using the ordered Langasite compounds SNGS. The BAW resonator 30
includes the piezoelectric layer 31 having a first or upper face on
which a first patch electrode 32 is illustratively provided.
Correspondingly, a second patch electrode 33 is provided on the
lower face of the layer 31. Operation of the BAW resonator will
readily appreciated by those skilled in the art without further
discussion herein. In addition, those of skill in the art will also
appreciate that other electrode configurations for the BAW
resonator 30 are also contemplated by the present invention.
[0046] The BAW filter 40 is further explained with specific
reference to FIG. 4. The BAW filter 40 also illustratively includes
a piezoelectric layer 41 formed of SNGS as described herein. In the
illustrated embodiment, a first pair of interdigitated electrodes
42a, 43a are formed on a first or upper surface of the
piezoelectric layer 41, and second pair of interdigitated
electrodes 42b, 43b are formed or connected to the second or lower
face of the piezoelectric layer. Other configurations of electrodes
are also contemplated by the invention as will be appreciated by
those skilled in the art. Those of skill in the art will also
appreciate the many varied electronic circuit applications for the
BAW filter 40 without further discussion herein.
[0047] Having now described a number of exemplary electronic
devices including the SAW resonator 10, the SAW filter 20, the BAW
resonator 30, and the BAW filter 40 that may use the SNGS
piezoelectric materials of the present invention, those of skill in
the art will appreciate other similar electronic devices.
Accordingly, Applicants now further describe additional features
and characteristics of the ordered Langasite structure compound,
SNGS.
[0048] The Langasite structure compound has four distinct cation
sites. However, it is interesting to know that only the cation size
of the large tetrahedral site may be the most critical one to
determine the stability of this structure. This site requires ions
with the radius around 0.6 .ANG.. The only ions that have such size
and can satisfy the electric charge requirement are Ga.sup.3+ and
Ge.sup.4+.
[0049] In fact, a majority of the Langasite structure compounds
contain germanium. However, in accordance with this invention, the
Ge-containing Langasite structures are eliminated from
consideration. The reason is not because of the order-disorder
structure, but rather because of the thermal stability. GeO.sub.2
has too low a thermal stability and evaporates profusely under
melting condition. It is not possible to grow large, high quality
single crystals of Ge-containing Langasite using the current known
melt pulling techniques. Therefore, Applicants have concentrated
only on the ordered Ga-containing Langasite structure
compounds.
[0050] Since it is not possible to make ordered-structure
La-containing Langasite compounds, Applicants switch to the
alkali-earth containing Langasite structure compounds. Two possible
compositions that are possible to fulfill both the charge
neutrality and site selection requirements and still retain an
ordered structure is SNGS--Sr.sub.3NbGa.sub.3Si.sub.2O.sub.14, One
should notice that the germanium equivalent compounds also satisfy
the same requirement. However, Si is selected over Ge because
SiO.sub.2 has much higher temperature stability and does not
evaporate at the melting temperature of these compositions.
[0051] Since the Si.sup.4+ion is much smaller than the
Ge.sup.4+ion, it reduces the lattice constants quite significantly.
It was found possible to produce high quality single crystals of
SNGS. Applicants also theorize that BNGG
(Ba.sub.3NbGa.sub.3Ge.sub.2O.sub.4) and BTGG
(Ba.sub.3TaGa.sub.3Ge.sub.2O.sub.14) compounds can be synthesized
since other Ba-containing Langasite structure compounds do exist
such as BGG (Ba.sub.3Ga.sub.2Ge.sub.4O.sub.4), although
conventional melt flow pulling techniques may not be
sufficient.
[0052] The demonstration of the existence of a particular
composition is just the first step towards the production of a
crystal. It shows that this composition is indeed thermodynamically
stable. To be able to grow a crystal directly from melt, it is
needed to demonstrate that this composition is stable all the way
to melting without any solid state phase transition nor thermal
dissociation.
[0053] At the same time, a melt with this property will crystallize
a crystal with the same composition as the melt. This property is
called congruent melting. Congruent melting may be highly desirable
for practical crystal production, but a much harder property to
realize. In fact, the majority of the known compounds do not melt
congruently. The likelihood to be congruently melting decreases
dramatically as the number of components in the melt increases.
[0054] For example, essentially all single element melts are
congruent, such as Si, or Ge, etc. Examples of two element
congruent melts include Al.sub.2O.sub.3, GaAs, etc. Both SiO.sub.2,
ZnS are not congruent melting. Examples of three element congruent
melts include YAG (Y.sub.3Al.sub.5O.sub.12), LiNbO.sub.3, etc. The
known numbers of four element congruent melts are even fewer. It
turns out that Langasite family compounds have many congruent
melting compositions such as LGS, LGN and LGT. Other known
four-element congruent melts include GSGG
(Gd.sub.3Sc.sub.2Ga.sub.3O.sub.12), SFAP
(Sr.sub.5P.sub.3O.sub.12F), YCOB (YCa.sub.4B.sub.3O.sub.10).
[0055] One of the interesting things observed with SNGS is the
congruent melting nature of this compounds. In fact, Applicants
believe that it is among the first known composition systems that
contain truly four oxide components (or five elements total) and
melt congruently. In other words, each element is located in a
specific site without mixing or solid solution among
themselves.
[0056] For example a Nd doped LGT crystal contains four oxide
components, namely, Nd.sub.2O.sub.3, La.sub.2O.sub.3,
Ta.sub.2O.sub.5 and Ga.sub.2O.sub.3. But it is not a true four
component system, since Nd and La occupy the same dodecahedral site
and thus structurally they are indistinguishable. Therefore, Nd-LGT
is still a three oxide component (or four element) system.
[0057] For the compound disclosed here, we found that once the melt
composition is properly adjusted, we can practically use the entire
melt to grow the crystals. This is significant since this means
that there is very little selective evaporation of the components
and these crystals are suitable for mass production with very
little material waste. This reduces the crystal manufacturing
cost.
[0058] In addition, among all the oxide components used in the
Langasite family compound growth, the most expensive one is
GeO.sub.2 followed by Ga.sub.2O.sub.3. As mentioned earlier, in
accordance with the invention, Ge-containing compounds are avoided
not just because of their cost, but more so because of their
instability due to volatilization of GeO.sub.2.
[0059] For LGS, LGN and LGT, the use of Ga.sub.2O.sub.3 is quite
expensive, a 5, 5.5 and 5.5 factor per formula, respectively. This
has been a concern for the eventual commercialization of these
compounds because of their high chemical cost as compared with
quartz (SiO.sub.2) or LiNbO.sub.3. The industry may be so
accustomed to the low cost of quartz and LiNbO.sub.3 wafers, it may
likely be quite reluctant to accept the high cost of Langasite
wafers despite their better properties. In the case of the new
compound, the Ga.sub.2O.sub.3 usage is reduced by almost half. It
will certainly help to reduce the wafer cost.
[0060] Another interesting observation is the apparent very strong
facet development in crystal external morphology. With the same
growth furnace and growth environment, LGS is practically round
without a facet. Both LGN and LGT have a slight tendency of facet
development. The SNGS compound has a relatively strong facet
development. Applicants believe, without wishing to be bound
thereto, that the facet development reflects the anisotropy in the
octahedral site (Site B). It may affect the microscopic strength of
piezoelectricity due to the strong polarizability of Nb. Since the
overall piezoelectric strength depends on both the microscopic
strength and its geometric arrangement, it is likely that the
piezoelectricity can be enhanced.
[0061] In the earlier work on LGS, LGT and LGN, Applicants have
done extensive investigation on the defect formation in these
structures. Both twinning and domain formation were found in
earlier work among these three crystals. The types of defects in
the two new crystals were also considered closely. So far, there
has not been any clear evidence of twinning. The formation of some
domain structures was observed, concentrated primarily at the cone
region. It can extend into the constant diameter region.
Interestingly, unlike LGS, LGT and LGN, the extent of cracking is
much less even with domain structures. Perhaps the only reason for
the lack of cracking is that the anisotropy of thermal expansion is
much less. Based on these qualitative observations, it is expected
that the overall properties of this new crystal will be somewhat
different from LGS, LGN and LGT.
[0062] Applicants theorize, without wishing to be bound thereto,
that the ordered crystal structure leads to low acoustic loss, and
is therefore well suited for manufacture of high quality factor (Q)
bulk acoustic wave resonators useful for clocks and oscillators
with high frequency stability, low phase noise and low jitter. The
ordered crystal structure may also lead to a high electromechanical
coupling factor, and is therefore more suited than quartz for
manufacture of bulk acoustic wave filters of wider passband and
lower insertion loss. The symmetry of the crystal structure may
lead to a range of temperature compensated crystal orientations so
that bulk acoustic wave devices manufactured with this ordered
Langasite structure compound incur minimal shifts in frequency and
group delay induced by ambient temperature variation.
[0063] An SNGS crystal was grown by the traditional Czochralski
pulling technique in a nitrogen atmosphere. The seed orientation is
in (010) direction starting with a 3300-gm mixture of strontium
carbonate (SrCO.sub.3), Niobium oxide (Nb.sub.2O.sub.5), Gallium
oxide (Ga.sub.2O.sub.3), Silicon oxide (SiO.sub.2), all with a
purity of 99.99%. The Iridium crucible used is with the diameter of
102 mm and a height of 115 mm. The atomic ratio was
Sr:Nb:Ga:Si=3:1:3:2. The crystal obtained was examined by X-ray
diffraction, yielding the lattice parameters of a=8.279 .ANG. and
c=5.039 .ANG.. The SNGS crystal in accordance with the present
invention provided the following comparative characteristics:
1 SAW MATERIAL K.sup.2 (%) VELOCITY .epsilon..sub.11
.epsilon..sub.33 ST Quartz 0.134 3156 4.53 4.68 LGS 0.3.about. 2350
19.62 49.41 0.38 LGN 0.43 2300 20.089 79.335 LGT 0.38 2220 18.271
78.95 SNGS 0.635 2840 13.63 21.92
[0064] It is further theorized that the containing of heavy
elements in the compound reduces the phonon energy of the crystals.
It is further theorized that the perfect structural ordering
further reduces the incoherent phonon scattering. Combinations of
these two properties make the ordered Langasite compounds SNGS
produce a higher Q material as compared to other piezoelectric
materials. These materials are advantageously used in accordance
withe the electronic devices and associated methods described
above. Other similar devices and methods are disclosed in copending
patent applications entitled, "ELECTRONIC DEVICE INCLUDING
LANGASITE STRUCTURE COMPOUNDS AND METHOD FOR MAKING SAME", having
attorney work docket no. 59625, and "ELECTRONIC FILTER INCLUDING
LANGASITE STRUCTURE COMPOUND AND METHOD FOR MAKING SAME", having
attorney work docket no. 59684, both filed concurrently herewith,
and the entire disclosures of which are incorporated herein by
reference.
[0065] In addition, many modifications and other embodiments of the
invention will come to the mind of one skilled in the art having
the benefit of the teachings presented in the foregoing
descriptions and the associated drawings. Therefore, it is to be
understood that the invention is not to be limited to the specific
embodiments disclosed, and that modifications and embodiments are
intended to be included within the scope of the appended
claims.
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