U.S. patent application number 09/334588 was filed with the patent office on 2002-01-17 for method of forming selective metal layer and method of forming capacitor and filling contact hole using the same.
Invention is credited to CHAE, YUN-SOOK, KANG, SANG-BUM, LEE, SANG-IN, LIM, HYUN-SEOK, YOON, MEE-YOUNG.
Application Number | 20020006708 09/334588 |
Document ID | / |
Family ID | 26633764 |
Filed Date | 2002-01-17 |
United States Patent
Application |
20020006708 |
Kind Code |
A1 |
KANG, SANG-BUM ; et
al. |
January 17, 2002 |
METHOD OF FORMING SELECTIVE METAL LAYER AND METHOD OF FORMING
CAPACITOR AND FILLING CONTACT HOLE USING THE SAME
Abstract
A selective metal layer formation method, a capacitor formation
method using the same, and a method of forming an ohmic layer on a
contact hole and filling the contact hole using the same, are
provided. A sacrificial metal layer is selectively deposited on a
conductive layer by supplying a sacrificial metal source gas which
deposits selectively on a semiconductor substrate having an
insulating film and the conductive layer. Sacrificial metal atoms
and a halide are formed, and the sacrificial metal layer is
replaced with a deposition metal layer such as titanium Ti or
platinum Pt, by supplying a metal halide gas having a halogen
coherence smaller than the halogen coherence of the metal atoms in
the sacrificial metal layer. If such a process is used to form a
capacitor lower electrode or form an ohmic layer on the bottom of a
contact hole, a metal layer can be selectively formed at a
temperature of 500.degree. C. or lower.
Inventors: |
KANG, SANG-BUM; (SEOUL,
KR) ; CHAE, YUN-SOOK; (SEOUL, KR) ; LEE,
SANG-IN; (SUWON-CITY, KR) ; LIM, HYUN-SEOK;
(YONGIN-CITY, KR) ; YOON, MEE-YOUNG;
(SEONGNAM-CITY, KR) |
Correspondence
Address: |
MARGER JOHNSON & MCCOLLOM PC
1030 SW MORRISON STREET
PORTLAND
OR
97205
US
|
Family ID: |
26633764 |
Appl. No.: |
09/334588 |
Filed: |
June 16, 1999 |
Current U.S.
Class: |
438/399 ;
257/E21.011; 257/E21.578; 257/E21.586; 257/E21.592;
257/E21.593 |
Current CPC
Class: |
H01L 28/60 20130101;
C23C 16/04 20130101; H01L 21/76888 20130101; H01L 21/76889
20130101; H01L 21/76804 20130101; H01L 21/76879 20130101 |
Class at
Publication: |
438/399 |
International
Class: |
H01L 021/20 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 16, 1998 |
KR |
98-022579 |
May 14, 1999 |
KR |
99-17362 |
Claims
What is claimed is:
1. A method of forming a selective metal layer on a semiconductor
substrate on which an insulative layer and a conductive layer are
formed, the method comprising the steps of: forming a sacrificial
metal layer on the conductive layer by supplying a sacrificial
metal source gas which is deposited selectively on the conductive
layer; and replacing the sacrificial metal layer with a deposition
metal layer by supplying a metal halide gas having a halogen
coherence smaller than the halogen coherence of metal atoms in the
sacrificial metal layer.
2. The method of claim 1, further comprising the step of supplying
a purge gas before the sacrificial metal source gas is
supplied.
3. The method of claim 1, further comprising the steps of:
supplying a purge gas after the sacrificial metal layer is formed;
and supplying a purge gas after the sacrificial metal layer is
replaced with the deposition metal layer.
4. The method of claim 3, wherein a deposition metal layer having a
desired thickness is formed by repeating the steps of: forming the
sacrificial metal layer; supplying a purge gas after the
sacrificial metal layer is formed; replacing the sacrificial metal
layer with the deposition metal layer; and supplying a purge gas
after the sacrificial metal layer is replaced with the deposition
metal layer.
5. The method of claim 1, wherein the insulative layer comprises an
oxide.
6. The method of claim 1, wherein the conductive layer is formed of
a material selected from the group consisting of silicon doped with
impurities and a metal containing material.
7. The method of claim 6, wherein the silicon doped with impurities
has hydrogen termination radical.
8. The method of claim 6, wherein the metal containing material for
the conductive layer is selected from the group consisting of a
refractory metal, a refractory metal nitride, a refractory carbide,
a metal silicide, conductive Perovskite, a platinum-family metal, a
conductive platinum-family oxide, and a mixture of two or more of
the above materials.
9. The method of claim 2, wherein the purge gas is selected from
the group consisting of hydrogen (H.sub.2), silane (SiH.sub.4),
nitrogen (N.sub.2), argon (Ar)and a mixture of two or more of the
above gases.
10. The method of claim 3, wherein the purge gas is selected from
the group consisting of hydrogen (H.sub.2), silane (SiH.sub.4),
nitrogen (N.sub.2), argon (Ar), and a mixture of two or more the
above gases.
11. The method of claim 9, wherein the purge gas is continuously
supplied.
12. The method of claim 10, wherein the purge gas is continuously
supplied, or first supplied in a predetermined amount to purge and
periodically supplied in predetermined amounts after the
sacrificial metal layer is formed and after the sacrificial metal
layer is replaced with the deposition metal layer.
13. The method of claim 1, wherein the sacrificial metal layer is
formed of aluminum, and the deposition metal layer is formed of
titanium or platinum.
14. A method of forming a capacitor of a semiconductor device using
a selective metal layer formation method, comprising the steps of:
(a) forming a contact hole exposing a source region of a
semiconductor substrate by forming an insulating film on a
substrate and patterning the insulating film; (b) forming a
conductive layer pattern connected to the contact hole; (c) forming
a sacrificial metal layer on the conductive layer, by supplying a
sacrificial metal source gas which is deposited selectively on the
conductive layer; (d) replacing the sacrificial metal layer with a
deposition metal layer by supplying a metal halide gas, the metal
having a halogen coherence smaller than the halogen coherence of
metal atoms in the sacrificial metal layer; (e) forming a
dielectric film on the deposition metal layer; and (f) forming an
upper electrode on the dielectric film.
15. The method of claim 14, further comprising the step of
supplying a purge gas before the step (c) of supplying the
sacrificial metal source gas.
16. The method of claim 15, wherein the purge gas is continuously
supplied, or first supplied in a predetermined amount to purge and
periodically supplied in predetermined amounts after the
sacrificial metal layer is formed and after the sacrificial metal
layer is replaced with the deposition metal layer.
17. The method of claim 14, wherein the insulating film comprises
an oxide.
18. The method of claim 14, wherein the conductive layer pattern in
the step (b) is formed of a material selected from the group
consisting of polysilicon doped with impurities and a metal
containing material.
19. The method of claim 14, further comprising the step of
siliciding the deposition metal layer after the step (d) of
replacing the sacrificial metal layer with the deposition metal
layer.
20. The method of claim 18, wherein the metal containing material
for the conductive layer pattern is selected from the group
consisting of a refractory metal, a refractory metal nitride, a
refractory carbide, a metal silicide, conductive Perovskite, a
platinum-family metal, a conductive platinum-family oxide, and a
mixture of two or more of the above materials.
21. The method of claim 14, wherein a deposition metal layer having
a desired thickness is formed by repeating the step (c) of forming
the sacrificial metal layer and the step (d) of replacing the
sacrificial metal layer with the deposition metal layer.
22. The method of claim 14, wherein a deposition metal layer having
a desired thickness is formed by repeating the steps of forming the
sacrificial metal layer, of supplying a purge gas, of replacing the
sacrificial metal layer with the deposition metal layer, and of
supplying a purge gas.
23. A method of filling a contact hole using a selective metal
layer formation method, comprising the steps of: (a) forming an
insulating film on a semiconductor substrate and forming a contact
hole exposing a lower film by patterning the insulating film; (b)
forming a sacrificial metal layer on the lower film by supplying a
sacrificial metal source gas which is deposited selectively on the
lower film; (c) replacing the sacrificial metal layer with a
deposition metal layer by supplying a metal halide gas, the metal
having a halogen coherence smaller than the halogen coherence of
metal atoms in the sacrificial metal layer; and (d) forming a
conductive layer filling the contact hole.
24. The method of claim 23, wherein the insulating film in the step
(a) comprises an oxide.
25. The method of claim 23, wherein the lower film in the step (a)
is formed of a material selected from the group consisting of a
refractory metal, a refractory metal nitride, a refractory metal
carbide, and silicon doped with impurities having hydrogen
termination radical.
26. The method of claim 23, further comprising the step of
supplying a purge gas before the step (b) of forming the
sacrificial metal layer.
27. The method of claim 26, wherein the purge gas is continuously
supplied, or first supplied in a predetermined amount to purge and
periodically supplied in predetermined amounts after the
sacrificial metal layer is formed and after the sacrificial metal
layer is replaced with the deposition metal layer.
28. The method of claim 26, wherein the purge gas is selected from
the group consisting of hydrogen (H.sub.2), silane (SiH.sub.4),
nitrogen (N.sub.2), argon (Ar), and a mixture of two or more of the
above gases.
29. The method of claim 27, wherein the purge gas is selected from
the group consisting of hydrogen (H.sub.2), sane (SiH.sub.4),
nitrogen (N.sub.2), argon (Ar), and a mixture of two or more of the
above gases.
30. The method of claim 23, wherein a deposition metal layer having
a desired thickness is formed by repeating the steps (b) of forming
the sacrificial metal layer and the step (c) of replacing the
sacrificial metal layer with the deposition metal layer.
31. The method of claim 23, wherein a deposition metal layer having
a desired thickness is formed by repeating the step of forming the
sacrificial metal layer, of supplying a purge gas, of replacing the
sacrificial metal layer with the deposition metal layer, and of
supplying a purge gas.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a method of manufacturing
semiconductor devices, and more particularly, to a method of
forming a selective metal layer and methods of forming a capacitor
of a semiconductor device and filling a contact hole using the
same.
[0003] 2. Description of the Related Art
[0004] As semiconductor devices become highly integrated and
complicated, a metal layer must often be selectively formed while
manufacturing the semiconductor devices. In a process for
manufacturing a capacitor of a semiconductor device, a lower
electrode is formed using a metal instead of polysilicon to obtain
high capacitance, thereby achieving a metal insulator silicon (MIS)
or metal insulator metal (MIM) structure. Or, in a process for
filling a contact hole, an ohmic layer is formed on the bottom of a
small contact hole having a high aspect ratio. The above two
processes have many difficulties.
[0005] In the manufacturing process of the capacitor having the
metallic lower electrode, it is very difficult to selectively
deposit a metal layer without patterning the metal layer on a
hemispherical grain (HSG) polysilicon lower electrode. At present,
such technology is not known at all. Also, in order to use
PZT(Pb(Zr,Ti)O.sub.3) or BST((Ba,Sr)TiO.sub.3), having a Perovskite
structure, as a high dielectric film of a capacitor, it is
preferable that platinium (Pt), which is not oxidized and has
excellent leakage current properties, is used instead of an
existing polysilicon electrode, when a dielectric film is
deposited. However, when a metal layer such as a platinum film is
deposited by a blanket method rather than a selective method,
etching is hard. That is, when the platinum film formed by the
blanket method is dry-etched using chlorine (Cl.sub.2) gas as an
etchant, PtClx generated as a by-product of etching is a
non-volatile conductive polymer. Thus, a process for removing the
PtClx by wet etching must also be performed. In the wet etching
process, to remove PtClx, part of a platinum lower electrode is
also etched. It is therefore difficult to perform a repeatable
process in a manufacturing process of a dynamic random access
memory (DRAM) which requires fine patterning.
[0006] Also, the ohmic layer is formed on the bottom of the contact
hole by depositing a highly conductive metal having a high melting
point, such as titanium, by plasma enhanced chemical vapor
deposition (PECVD) or sputtering. However, when sputtering is used
to form the ohmic layer, step coverage is low. The PECVD is not
suitable to apply to an actual process, since leakage current is
increased by a high deposition temperature of 600.degree. C. or
more and thus the electrical characteristics of the semiconductor
devices are deteriorated.
[0007] In addition, if the ohmic layer such as a titanium (Ti)
layer is formed by sputtering, and a barrier layer, e.g., a
titanium nitride (TiN) layer, is formed on the ohmic layer by
chemical vapor deposition (CVD), the ohmic layer may be corroded
and the interface between the ohmic layer and the barrier layer may
lift, If the barrier layer (TiN) is formed on a titanium (Ti) ohmic
layer by sputtering, the interface between the ohmic layer and the
barrier layer does not lift. However, when a plug layer for filling
the contact is formed using tungsten by CVD in a subsequent
process, the lifting problem occurs.
[0008] Therefore, a method is required of selectively forming a
metal layer at a temperature of 500.degree. C. or lower where the
electrical characteristics of semiconductor devices are not
degraded. However, at present, it is very difficult to realize such
a technique in the process of forming the lower electrode of the
capacotor and forming the ohmic layer of the contact hole.
SUMMARY OF THE INVENTION
[0009] To solve the above problems, it is an objective of the
present invention to provide a method of forming a selective metal
layer, by which a sacrificial metal layer is selectively deposited
at a temperature of 500.degree. C. or lower. The sacrificial metal
layer is replaced with a deposition metal layer by reacting the
sacrificial metal layer with a metal halide gas having a smaller
halogen coherence than a metallic atom of the sacrificial metal
layer.
[0010] It is another objective of the present invention to provide
a method of forming a capacitor of a semiconductor device using the
selective metal layer formation method.
[0011] It is still another objective of the present invention to
provide a method of filling a contact hole using the selective
metal layer formation method.
[0012] Accordingly, to achieve the first objective, in a selective
metal layer formation method, a semiconductor substrate on which an
insulating film and a conductive layer are formed is loaded into a
chamber, and a purge gas, e.g. a mixture of hydrogen and silane, is
supplied to the chamber. A sacrificial metal layer is formed on
only the conductive layer by supplying to the chamber a sacrificial
metal source gas which is deposited selectively on the conductive
layer. The sacrificial metal source gas is preferably either
dimethyl aluminum hydride (DMAH: (CH.sub.3).sub.2AlH) or dimethyl
ethylamine alane (DMEAA:
(CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3). Finally, the
sacrificial metal layer is replaced with a deposition metal layer
by supplying to the chamber a metal halide gas having a halogen
coherence smaller than the halogen coherence of metal atoms in the
sacrificial metal layer.
[0013] According to a preferred embodiment of the present
invention, the purge gas is continuously supplied, or first
supplied in a predetermined amount to purge and periodically
supplied in predetermined amounts after the sacrificial metal layer
is formed and replaced with the deposition metal layer. Here, it is
suitable that the supply time and amount of a purge gas to be
supplied after replacement of the deposition metal layer are
greater than in other steps.
[0014] It is suitable that the insulating film is an oxide film
(SiO.sub.2) or a complex film including the oxide film, and that
the conductive layer is formed of silicon doped with impurities, or
a metal containing material.
[0015] Preferably, the metal containing material for the conductive
layer is a refractory metal, a refractory metal nitride, a
refractory metal carbide, a metal silicide, conductive Perovskite,
a platinum-family metal, a conductive platinum-family nitride, or a
mixture of two or more of the above materials. It is preferable
that TiCl.sub.4 is used as the metal halide gas when the deposited
metal is titanium. Also, it is preferable that a gas obtained by
dissolving platinic chloride (Cl.sub.6H.sub.6Pt) or PtCl.sub.2 in
water (H.sub.2O ) or alcohol and vaporizing the dissolved
Cl.sub.6H.sub.6Pt or PtCl.sub.2 is used as the metal halide gas
when the deposited metal is platinum.
[0016] To achieve the second objective, in a method of forming a
capacitor of a semiconductor device using a selective metal layer
formation method, a contact hole exposing a source region of a
semiconductor substrate is formed, by forming an insulating film
such as an oxide film (SiO.sub.2) or a complex film including the
oxide film on the semiconductor substrate and patterning the
insulating film. A conductive layer is formed of polysilicon doped
with impurities, or a metal containing material, filling the
contact hole and covering the insulating film. A conductive layer
pattern connected to the contact hole is formed by patterning or
chemically mechanically polishing the conductive layer. The
semiconductor substrate is introduced into a chamber, and a purge
gas of hydrogen (H.sub.2) and silane (SiH.sub.4), is supplied to
the chamber. A sacrificial metal layer is formed on only the
conductive layer, by supplying to the chamber a sacrificial metal
source gas which is deposited selectively on the conductive layer.
Here, the sacrificial metal source gas is preferably either
dimethyl aluminum hydride (DMAH: (CH.sub.3).sub.2ALH) or dimethyl
ethylamine alane (DMEM. (CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3).
Then, the sacrificial metal layer is replaced with a deposition
metal layer by supplying to the chamber a metal halide gas having a
halogen coherence smaller than the halogen coherence of metal atoms
in the sacrificial metal layer. Finally, a dielectric film is
formed on the deposition metal layer, and an upper electrode is
formed on the dielectric film.
[0017] According to a preferred embodiment of the present
invention, the step of forming a hemispherical grain on the surface
of a conductive pattern can be performed after the conductive layer
pattern is formed.
[0018] It is preferable that the purge gas is continuously
supplied, or first supplied in a predetermined amount to purge and
periodically supplied in predetermined amounts after the
sacrificial metal layer is formed and after the sacrificial metal
layer is replaced with the deposition metal layer. Here, it is
proper that a purge gas supplied after the deposition metal layer
is replaced has a longer supply time and greater amount of supply
than a purge gas supplied in other steps.
[0019] Also, according to the preferred embodiment of the present
invention, the step of siliciding the deposition metal layer can be
further comprised after the step of forming the deposition metal
layer.
[0020] To achieve the third objective, in a method of filling a
contact hole using a selective metal layer formation method, an
insulating film, such as an oxide film (SiO.sub.2) or a complex
film including the oxide film, is formed on a semiconductor
substrate. A contact hole exposing a lower film of polysilicon
doped with impurities, or a metal such as TiN, is formed by
patterning the insulating film. The semiconductor substrate on
which the contact hole is formed is introduced into a chamber, and
a purge gas, preferably a mixture of hydrogen (H.sub.2) and silane
(SiH.sub.4), is supplied to the chamber. A sacrificial metal layer
is formed of aluminum (Al) on only the lower film by supplying to
the chamber a sacrificial metal source gas which is deposited
selectively on the lower film. Here, the sacrificial metal source
gas is either dimethyl aluminum hydride (DMAH: (CH.sub.3).sub.2ALH)
or dimethyl ethylamine alane (DMEAA:
(CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3). Then, the sacrificial
metal layer is replaced with a deposition metal layer by supplying
a metal halide gas having a halogen coherence smaller than the
halogen coherence of metal atoms in the sacrificial metal layer, to
the chamber. Finally, a conductive layer filling the contact hole
is formed.
[0021] According to the preferred embodiment of the present
invention, the purge gas is continuously supplied, or first
supplied in a predetermined amount to purge and periodically
supplied in predetermined amounts after the sacrificial metal layer
is formed and after the sacrificial metal layer is replaced with
the deposition metal layer. Here, it is proper that a purge gas
supplied after the deposited metal layer is replaced has a longer
supply time and greater amount of supply than a purge gas supplied
in other steps.
[0022] Also, it is preferable to form a barrier layer, e.g., a TiN
layer, on a deposition metal layer after the step of replacing the
sacrificial metal layer with the deposition metal layer.
[0023] According to the present invention, in a process for
manufacturing semiconductor devices, a specific metal selectively
formed at a temperature of 500.degree. C. or lower is applied to
the process for forming a lower electrode of a capacitor, thereby
forming a metallic lower electrode of a capacitor without serious
process difficulty. Also, when the ohmic layer is formed on the
bottom surface of the contact hole, property degradation or lifting
of a thin film due to corrosion can be prevented, while
simultaneously increasing step coverage.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The above objectives and advantages of the present invention
will become more apparent by describing in detail preferred
embodiments thereof with reference to the attached drawings in
which.:
[0025] FIG. 1 is a flowchart illustrating a process for forming a
selective metal layer, according to the present invention;
[0026] FIGS. 2A and 2B are gas flow graphs of the process for
forming a selective metal layer according to the present
invention;
[0027] FIG. 3 is a flowchart illustrating a method of forming a
capacitor using the selective metal layer formation process
according to the present invention;
[0028] FIGS. 4A through 4F are cross-sectional views illustrating a
method of forming a capacitor using the process for forming a
selective metal layer, according to a first embodiment of the
present invention;
[0029] FIGS. 5A through 5F are cross-sectional views illustrating a
method of forming a capacitor using the process for forming a
selective metal layer, according to a second embodiment of the
present invention;
[0030] FIGS. 6A through 6C. are cross-sectional views illustrating
a method of forming a capacitor using the process for forming a
selective metal layer, according to a third embodiment of the
present invention;
[0031] FIG. 7 is a flowchart showing a method of filling a contact
hole using the selective metal layer formation process according to
the present invention; and
[0032] FIGS. 8A through 8E are cross-sectional views illustrating a
contact hole filling method using the selective metal layer
formation process, according to a fourth embodiment of the present
invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0033] Method of Forming a Selective Metal Layer
[0034] Referring to FIG. 1 illustrating a process for forming a
selective metal layer, according to the present invention, first, a
semiconductor substrate on which an insulating film and a
conductive layer are formed is introduced into a chamber of a
semiconductor manufacturing device, in step 100. Here, the
insulating film is an oxide film (SiO.sub.2) which does not absorb
a metal deposited to form a selective metal layer, or a complex
film including the oxide film. The conductive layer is formed of
polysilicon doped with impurities having hydrogen termination
radical, on which aluminum Al can be easily and selectively
deposited. Alternatively, the conductive layer is formed of a
refractory metal, a refractory metal nitride, a refractory metal
carbide, a metal silicide, conductive Perovskite, a platinum-family
metal, a conductive platinum-family oxide, or a mixture of two or
more of the above materials. The platinum-family metal can be Pt,
Rh, Ru, Ir, Os or Pd, the conductive platinum-family oxide can be
PtOx, RhOx, RuOx, IrOx, OsOx or PdOx, and the conductive Perovskite
can be CaRuO.sub.3, SrRuO.sub.3, BaRuO.sub.3, (BaSr)RuO3,
Ca/rO.sub.3l SrlrO.sub.3, BalrO.sub.3, or (La,Sr)CoO.sub.3. Next, a
purge gas such as hydrogen H.sub.2, silane SiH.sub.4, nitrogen,
argon, or a mixture of two or more of the above gases is supplied
to the chamber to purge the inside of the chamber, in step 110.
Here, the purge gas can be supplied by the following two methods.
First, the purge gas can be continuously supplied in a
predetermined amount from the beginning. Second, a predetermined
mount of purge gas is supplied to the chamber after supplying a
sacrificial metal source gas or a metal halide gas, to purge the
chamber, and a predetermined amount of purge gas can be
periodically supplied after the steps 120 of depositing a
sacrificial metal and after the step 140 of replacing the
sacrificial metal layer with a deposition metal layer.
[0035] A sacrificial metal layer made of aluminum (Al) is formed on
the surface of the conductive layer by supplying to the chamber
dimethyl aluminum hydride (DMAH: (CH.sub.3).sub.2AlH) or dimethyl
ethylamine alane (DMEAA: (CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3)
as a sacrificial metal source gas, in step 120. The sacrificial
metal layer is made of aluminum because aluminum will readily
combine with a halogen-family element such as Cl, Br, F or I with
the highest Gibbs free energy. Moreover, various precursors for
aluminum have already been developed. At the same time, Al halides
have Gibbs free values that facilitates ready replacement of the Al
metal layer as further described below. Precursors for the
deposition of aluminum include di-i-butylaluminum hydride
((C.sub.4H.sub.9).sub.2AlH- ), tri-i-butylauminum
((C.sub.4H.sub.9).sub.3Al), triethylanuminum
((C.sub.2H.sub.5).sub.2Al), trimethylaluminum ((CH.sub.3).sub.3Al),
trimethylamine (AlH.sub.3N(CH.sub.3).sub.3), dimethyl aluminum
hydride ((CH.sub.3).sub.2AlH), and dimethyl ethylamine alane
((CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3). The dimethyl aluminum
hydride ((CH.sub.3).sub.2AlH) (hereinafter called `DMAH`) and
dimethyl ethylamine alane
((CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3) (hereinafter called
`DMEAA`) are not deposited on an insulating film such as the oxide
film (SiO.sub.2) but they are deposited selectively on only a metal
such as TiN or silicon which is doped with the impurities of
hydrogen (H.sub.2) termination radical. That is, the DMAH and DMEAA
are deposited not on the insulating film of the semiconductor
substrate in the chamber but selectively on only the conductive
layer.
[0036] Then, a purge gas is supplied to the chamber having the
semiconductor substrate on which the sacrificial metal layer is
selectively formed, to purge the sacrificial metal source gas from
the chamber, in step 130.
[0037] Next, TiCl.sub.4 is introduced into the chamber in step 140.
The TiCl.sub.4 is decomposed and the Ti replaces the Al sacrificial
layer to form a metal layer of Ti. Here, the metal in the metal
halide gas has a weaker halogen coherence than a metal atom of the
sacrificial metal layer, so that the metal atom of the sacrificial
metal layer reacts with the metal halide gas. That is, the Gibbs
free energy of TiCl.sub.4 is 678.3 kJ/mol at 427.degree. C. (700K),
which is higher than that of most metal halides, whereas the Gibbs
free energy of AlCl.sub.6 is 1121.9 kJ/mol which is higher than
that of TiCl.sub.4, so that the metal atoms of the sacrificial
metal layer react with the metal halide gas. Thus, aluminum atoms
of the sacrificial metal layer are separated from the surface of
the conductive layer and react with a chlorine (Cl) gas having a
higher coherence, thus becoming AlCl.sub.x of a gaseous state.
Also, titanium (Ti) resolved from TiCl.sub.4 is deposited in the
empty places where the aluminum atoms separate from the surface of
the conductive layer. When the metal halide gas having a smaller
Gibbs free energy, i.e., the coherence between a sacrificial metal
and the halogen atom, is supplied into the chamber having the
semiconductor substrate on which the sacrificial metal is formed, a
metal layer can be selectively formed. The deposition metal layer
formed as described above can use titanium, tantalum, zirconium,
hafnium, cobalt, molybdenum, tungsten, nickel or platinum.
[0038] Here, when the deposited metal is titanium, TiCl.sub.4 is
used as the metal halide gas, and when the deposited metal is
platinum, a gas obtained by melting and vaporizing platinic
chloride (Cl.sub.6H.sub.6Pt) or PtCl.sub.2 in water (H.sub.2O) or
alcohol is used as the metal halide gas. Also, when the deposited
metal is cobalt, either cobalt chloride CoCl.sub.2, cobalt fluoride
CoF.sub.2, or cobalt iodide Col.sub.2 is used as the metal halide
gas. Here, since platinic chloride (Cl.sub.6H.sub.6Pt) or
PtCl.sub.2, which is a metal halide containing platinum, is solid,
it must be used after being melted in a solvent and vaporized.
Since platinum is inert compared with other metals, it has a lower
coherence with the halogen atom. Accordingly, when the platinum
reacts with the sacrificial metal layer such as aluminum, it can be
easily deposited.
[0039] When the deposited metal is molybdenum, either bis
(cyclopentadienyl)molybdenum dichloride
(C.sub.5H.sub.5).sub.2MoCl.sub.2, cyclopentadienylmolybdenum
tetrachloride C.sub.5H.sub.5MoCl.sub.4, molybdenum MoF.sub.6,
molybdenum fluoride MoCl.sub.3/MoCl.sub.5, or molybdenum iodide
Mol.sub.2 is used as the metal halide gas. When the deposited metal
is nickel, either [(C.sub.6H.sub.5).sub.2PCH.sub.2CH.sub.-
2CH.sub.2P(C.sub.6H.sub.5).sub.2]NiCl.sub.2
(1,2-bis(diphenylphosphineo)pr- opane nickel),
[(C.sub.6H.sub.5).sub.5C.sub.5].sub.2NiBr.sub.2
(bis(triphenylphosphin)nickel bromide),
[(C.sub.6H.sub.5).sub.3P].sub.2Ni- Cl.sub.2
(bis(triphenylphosphin)nickel chloride), [Ni(NH.sub.3).sub.6]Cl.s-
ub.2 (hexaaminenickel chloride), [Ni(NH.sub.3).sub.6]/.sub.2
(Hexaamine iodide), NiBr/NiBr.sub.2 (nickel bromide), NiCl.sub.2
(nickel chloride), NiF.sub.2 (nickel fluoride), or Nil.sub.2
(nickel iodide) is used as the metal halide gas. When the deposited
metal is tungsten, either bis(cyclopentadienyl)tungsten dichloride
(C.sub.5H.sub.5).sub.2WCl.sub.2, tungsten bromide
WB/W.sub.2B/W.sub.2B.sub.5, tungsten chloride WCl.sub.4/WCl.sub.6,
or tungsten fluoride WF.sub.6 is used as the metal halide gas.
[0040] For reference, Tables 1 through 5 show the Gibbs free
energies of many metal halide gases at an absolute temperature of
700K(427.degree. C.).
1TABLE 1 The Gibbs free energies of gaseous compounds containing Cl
at 427.degree. C. gibbs free gibbs free gibbs free energy energy
energy compound (kJ/mol) compound (kJ/mol) compound (kJ/mol)
Al.sub.2Cl.sub.6 -1121.9 HfCl.sub.3 -626.7 BeCl.sub.2 -373.1
ThCl.sub.4 -895.8 EuCl.sub.3 -621.6 BCl.sub.3 -367.7 UCl.sub.5
-811.9 YbCl.sub.3 -621.5 SiCl.sub.3 -365.7 HfCL.sub.4 -804.7
K.sub.2Cl.sub.2 -609.8 SnCl.sub.4 -362.3 ZrCl.sub.4 -777.6
Rb.sub.2Cl.sub.2 -607.6 InCl.sub.3 -335.8 LaCl.sub.3 -708.9
Li.sub.2Cl.sub.2 -597.8 AlCl.sub.2 -305.5 PrCl.sub.3 -706.9
SiCl.sub.4 -569.6 TaCl.sub.3 -300.1 In.sub.2Cl.sub.8 -703.7
AlCl.sub.3 -550.1 GeCl.sub.3 -299.8 CeCl.sub.3 -699.5
Fe.sub.2Cl.sub.6 -526.8 MnCl.sub.2 -286.4 NdCl.sub.3 -696.6
BaCl.sub.2 -524.3 WCl.sub.5 -285.6 Be.sub.2Cl.sub.4 -692.6
SrCl.sub.2 -498.1 CsCl -276.7 TiCl.sub.4 -678.3 TaCl.sub.4 -497.5
ZnCl.sub.2 -273.5 GdCl.sub.3 -674.3 CaCl.sub.2 -489.1 WCl.sub.4
-267.6 TbCl.sub.3 -668.1 PbCl.sub.4 -462.1 Ti.sub.2Cl.sub.2 -259.8
HoCl.sub.3 -659.7 VaCl.sub.4 -447.2 GaCl.sub.2 -258.4 ErCl.sub.3
-651.7 GeCl.sub.4 -410.8 SbCl.sub.5 -249.9 Cs.sub.2Cl.sub.2 -644.1
MgCl.sub.2 -407.8 Cu.sub.3Cl.sub.3 -242.9 TmCl.sub.3 -641.5
Fe.sub.2Cl.sub.4 -406.5 PCl.sub.3 -242.3 TaCl.sub.5 -636.6
GaCl.sub.3 -388.6 FeCl.sub.3 -240.6
[0041]
2TABLE 2 The Gibbs free energies of gaseous compounds containing
iodine I at 427.degree. C. gibbs free gibbs free gibbs free energy
energy energy compound (kJ/mol) compound (kJ/mol) compound (kJ/mol)
ThI.sub.4 -512 ZrI.sub.4 -409 TiI.sub.4 -320 Al.sub.2I.sub.6 -510
HfI.sub.4 -405 PbI.sub.4 -266 K.sub.2I.sub.2 -480 DyI.sub.3 -402
MgI.sub.2 -239 LaI.sub.3 -457 TmI.sub.3 -399 CuI -237 PrI.sub.3
-448 GdI.sub.3 -388 CsI -220 GeI.sub.3 -442 BaI.sub.2 -380
TaI.sub.5 -202 NdI.sub.3 -438 UI.sub.4 -377 SiI.sub.4 -150
Li.sub.2I.sub.2 -427 SrI.sub.2 -353 HI -11.8 ErI.sub.3 -410
CaI.sub.2 -338 -- --
[0042]
3TABLE 3 The Gibbs free energies of gaseous compounds containing
bromine (Br) at 427.degree. C. gibbs free gibbs free gibbs free
energy energy energy compound (kJ/mol) compound (kJ/mol) compound
(kJ/mol) Al.sub.2Br.sub.6 -860 HoBr.sub.3 -567 CaBr.sub.2 -435
Mg.sub.2Br.sub.4 -764 ErBr.sub.3 -566 PbBr.sub.4 -428 ThBr.sub.4
-743 TmBr.sub.3 -563 TaBr.sub.5 -424 HfBr.sub.4 -639 TbBr.sub.3
-559 EuBr.sub.2 -413 ZrBr.sub.4 -627 DyBr.sub.3 -559 SiBr.sub.4
-387 LaBr.sub.3 -621 GdBr.sub.3 -551 Cu.sub.3Br.sub.3 -187
CeBr.sub.3 -616 Li.sub.2Br.sub.2 -534 WBr.sub.6 -139 PrBr.sub.3
-612 TiBr.sub.4 -527 HBr -58.6 UBr.sub.4 -602 Na.sub.2Br.sub.2 -510
-- -- NdBr.sub.3 -598 SrBr.sub.2 -453 -- --
[0043]
4TABLE 4 The Gibbs free energies of gaseous compounds containing
fluorine (F) at 427.degree. C. gibbs free gibbs free gibbs free
energy energy energy compound (kJ/mol) compound (kJ/mol) compound
(kJ/mol) Al.sub.2F.sub.8 -2439 HfF.sub.4 -1592 Li.sub.3F.sub.3
-1457 UF.sub.6 -1953 ZrF.sub.4 -1587 PrF.sub.3 -1231 TaF.sub.5
-1687 S.sub.2F.sub.10 -1581 AsF.sub.5 -1080 ThF.sub.4 -1687
SiF.sub.4 -1515 CuF.sub.2 -287.3 Mg.sub.2F.sub.4 -1624 WF.sub.6
-1513 HF -277.1 NbF.sub.5 -1607 TiF.sub.4 -1467 -- --
[0044]
5TABLE 5 The Gibbs free energies of gaseous compounds containing
platinum (Pt) at 427.degree. C. gibbs free gibbs free gibbs free
energy energy energy compound (kJ/mol) compound (kJ/mol) compound
(kJ/mol) PtCl.sub.2 -78.6 PtCl.sub.3 -105.9 PtCl.sub.4 -141.9
PtBr.sub.2 +29.2 PtBr.sub.3 +27.3 PtBr.sub.4 -38.2 Ptl.sub.4 +62.8
-- -- -- --
[0045] After the metal layer such as titanium, tantalum, zirconium,
hafnium, cobalt, molybdenum, tungsten, nickel or platinum is formed
by a replacement method using the metal halide gas, a purge gas is
supplied to the chamber, in step 150. Here, the supply time and
amount of purge gas are greater than in the step of forming the
sacrificial metal layer and in other steps. Therefore, the metal
halide gas such as TiCl.sub.x adsorbed in a portion such as the
insulating film, but not the sacrificial metal layer, is desorbed
and purged.
[0046] FIGS. 2A and 2B are gas flow graphs of the selective metal
layer formation process according to the present invention, wherein
a Y axis denotes the supply state of a gas, and a X axis denotes
time. FIG. 2A is the gas flow graph when a purge gas of hydrogen
H.sub.2 and silane SiH.sub.4 is supplied periodically. FIG. 2B is
the gas flow graph when the purge gas is continuously supplied from
the beginning. The purge gas can be hydrogen H.sub.2, silane
SiH.sub.4, nitrogen N.sub.2, argon Ar, or a mixture of two or more
of the above gases instead of a mixture of hydrogen H.sub.2 and
silane SiH.sub.4. When the purge gas is periodically supplied as
shown in FIG. 2A, a purge gas 150 is supplied for a longer time and
in a larger amount, right after a metal halide gas is supplied, to
prevent the metal halide gas from being absorbed into the
insulating film and to sufficiently desorb the metal halide gas
from the insulating film. To be more specific, a purge gas 110 is
first supplied, and a sacrificial metal source gas 120 is then
supplied to form a sacrificial metal layer. When a purge gas is
periodically supplied, a purge gas 130 is supplied to the chamber
to purge the remaining sacrificial metal source gas. Also, a metal
halide gas including a metal to be deposited is supplied to replace
a sacrificial metal layer with a deposition metal layer. At this
time, a compound gas of sacrificial aluminum, aluminum halides, and
halogen atoms remains in the chamber, and this is again purged to
the outside of the chamber by supplying the purge gas 150 to the
chamber. This process is set as a cycle, and when this cycle is
repeated, the thickness of a deposited metal can be easily
controlled, and step coverage problems can be solved.
Method of Forming a Capacitor of a Semiconductor Device Using the
Selective Metal Layer Formation Method
[0047] FIG. 3 is a flowchart illustrating a method of forming a
capacitor using the selective metal layer formation process
according to the present invention.
[0048] Referring to FIG. 3, a lower structure such as a transistor
is formed, and an insulating film as an interlayer dielectric (ILD)
is formed using an oxide film or a complex film including the oxide
film. A contact hole exposing a source area of a transistor is
formed by performing photolithography on the insulating film, in
step 300. Optionally, an ohmic layer and barrier layer can be
formed using a material such as titanium (Ti) or titanium nitride
(TiN), to improve conductivity between the contact hole and a
filling material and prevent diffusion, in step 310. Then, a
conductive layer covering the surface of the insulating film is
formed by filling the contact hole using a conductive material for
a lower electrode, e.g., a metallic material such as TiN or
polysilicon doped with impurities. Here, it is preferable that the
impurities doped in the polysilicon have hydrogen termination
radical to allow a sacrificial metal layer to be selectively formed
in the subsequent process. The conductive layer can be formed of a
refractory metal, a refractory metal nitride, a refractory carbide,
a metal silicide, conductive Perovskite, a platinum-family metal, a
conductive platinum-family oxide, or a mixture of two or more of
the above materials, instead of TiN.
[0049] Next, a conductive layer pattern for use as lower electrode
connected to the contact hole is formed by patterning the
conductive layer, in step 320. The conductive layer pattern can be
formed after forming a plug layer for filling only the inside of
the contact hole, or by simultaneously depositing and patterning a
conductive layer for filling the inside of the contact hole. Here,
the step 330 of forming hemispherical grains (HSG) on the
conductive layer pattern can be optionally performed to increase
the surface area of the lower electrode. Then, the semiconductor
substrate with the HSG is introduced into a chamber of
semiconductor manufacturing equipment, and a purge gas is supplied
continuously or periodically as shown in FIGS. 2A and 2B, in step
340. A sacrificial metal source gas DMAH ((CH.sub.3).sub.2ALH) or
DMEAA((CH.sub.3).sub.2C.sub.2H.sub.5N:AlH.sub.3) is supplied to the
chamber, and a sacrificial metal layer of aluminum is formed
selectively on only the conductive layer, in step 350. A metal
halide gas containing a metal to be deposited, e.g., TiCl.sub.4,
platinic chloride (Cl.sub.6H.sub.6Pt), or PtCl.sub.2, is melted in
water(H.sub.2O) or alcohol and then vaporized, and the vapor is
supplied to form a deposition metal layer made of Ti or Pt using a
replacement method, in step 360. Then, a silicide layer can be
optionally formed by conducting a thermal treatment on the
deposition metal layer, in step 365. A nitride film can be
optionally formed using ammonia plasma or rapid thermal nitridation
(RTN), in step 370. An oxide film can optionally be formed by
performing a thermal treatment at an oxygen atmosphere, in step
375. Then, the nitride film and oxide film can be used as the
dielectric film of a capacitor.
[0050] Here, when Ti is used as the first deposition metal layer,
TiN is formed as the nitride film, and the selective metal layer
formation process shown in FIG. 1 is repeated, thereby forming a
second deposition metal layer made of platinum in step 373. The
step 373 is optional.
[0051] Thereafter, the dielectric film is deposited on the
resultant structure, in step 380. The dielectric film can be a
complex film of an oxide film and a nitride film, or can be formed
of a monatomic metal oxide selected from the group consisting of
Ta.sub.2O.sub.5, TiO.sub.2, ZrO.sub.2, Al.sub.2O.sub.3, and
Nb.sub.2O.sub.5, a monatomic metal nitride such as AlN, or a
polyatomic metal oxide selected from the group consisting of
SrTiO.sub.3, PZT(Pb(Zr, Ti)O.sub.3), and BST((Ba,Sr)TiO.sub.3) .
Finally, an upper electrode is formed on the semiconductor
substrate on which the dielectric film is formed, using polysilicon
or a metal such as TiN, TiAlN, or TiSiN, in step 390.
First Embodiment
[0052] FIGS. 4A through 4F are cross-sectional views illustrating a
method of forming a capacitor using a selective metal layer
formation process according to a first embodiment of the present
invention.
[0053] Referring to FIG. 4A, a lower structure (not shown) such as
a transistor is formed on a semiconductor substrate 400, and an
oxide film or a complex film including the oxide film is formed as
an interlayer dielectric (ILD) 402 on the resultant structure. A
contact hole 404 exposing a source area of the transistor is formed
by patterning the ILD 402. Polysilicon which is doped with
impurities and has hydrogen termination radical is deposited on the
semiconductor substrate in which the contact hole 404 is formed,
and the deposited polysilicon is patterned, thus forming a lower
electrode conductive layer pattern 406 connected to the contact
hole. The conductive layer pattern 406 can be formed of a
refractory metal, a refractory metal nitride, a refractory carbide,
a metal silicide, conductive Perovskite, a platinum-family metal, a
conductive platinum-family oxide, or a mixture of two or more of
the above materials, instead of the pollysilicon doped with
impurities.
[0054] Referring to FIG. 4B, a deposition metal layer 408 such as
Ti or Pt is formed on the resultant structure, using the selective
metal layer deposition method shown in FIG. 1. Here, a process for
forming HSG can optionally be performed on the conductive layer
pattern 406 before the deposition metal layer is formed, in order
to increase the surface area of the lower electrode of the
capacitor. Thus, in the present invention, an HSG surface is
formed, and the selective metal layer deposition according to the
present invention is performed, whereby a capacitor having a metal
insulator silicon (MIS) structure can be formed.
[0055] Referring to FIG. 4C, a nitride film 410 is formed on the
semiconductor substrate on which the deposition metal layer 408 is
formed, by nitridation or RTN using ammonia plasma (NH.sub.3
plasma). The nitride film 410 prevents oxidation at the interface
between the lower electrode and the dielectric film when the
dielectric film is deposited in the subsequent process which would
degrades capacitance.
[0056] Referring to FIG. 4D, an oxide film 412, e.g., titanium
oxide TiO.sub.2, is formed by performing a thermal treatment in
oxygen atmosphere on the resultant structure. The nitride film 410
and the oxide film 412 can be used as the dielectric film.
[0057] Referring to FIG. 4E, the dielectric film 414 is formed on
the resultant structure, using a monatomic metal oxide selected
from the group consisting of Ta.sub.2O.sub.5, TiO.sub.2, ZrO.sub.2,
Al.sub.2O.sub.3, and Nb.sub.2O.sub.5, a monatomic metal nitride
such as AlN, or a polyatomic metal oxide selected from the group
consisting of SrTiO.sub.3, PZT(Pb(Zr,Ti)O.sub.3), and
BST((Ba,Sr)TiO.sub.3).
[0058] Referring to FIG. 4F, an upper electrode 416 of polysilicon
or a metal is formed on the semiconductor substrate on which the
dielectric film 414 is formed, thereby forming the capacitor of a
semiconductor device having a structure of metal insulator silicon
(MIS) or metal insulator metal (MIM).
[0059] If the capacitor of a semiconductor device is formed as
described above, a photo process can be omitted since patterning is
not required after the lower electrode is formed. Particularly,
patterning on a lower electrode having HSG is not required, so that
the lower electrode can be formed of a metal while avoiding many
problems caused by etching.
Second Embodiment
[0060] FIGS. 5A through 5F are cross-sectional views illustrating a
method of forming a capacitor using a selective metal layer
formation process according to a second embodiment of the present
invention.
[0061] Since processes shown in FIGS. 5A and 5B are the same as
those in the first embodiment, the descriptions of these processes
are omitted to avoid redundancy. Here, reference numerals
correspond to those in the first embodiment for the sake of easy
understanding.
[0062] Referring to FIG. 5C, a deposition metal layer 508, being
the selective metal layer, is changed into a silicide layer 510
such as TiSix by performing silicidation on the semiconductor
substrate on which the deposition metal layer 508 is formed.
[0063] Referring to FIG. 5D, a nitride film 512 is formed on the
semiconductor substrate on which the silicide layer 510 is formed,
using NH.sub.3 plasma or by performing RTN.
[0064] Referring to FIG. 5E, a dielectric film 514 can be formed on
the semiconductor substrate on which the nitride film 510 is
formed. Here, the dielectric film 514 can be a complex film of an
oxide film and a nitride film, or can be formed of a monatomic
metal oxide selected from the group consisting of Ta.sub.2O.sub.5,
TiO.sub.2, ZrO.sub.2, Al.sub.2O.sub.3, and Nb.sub.2O.sub.5, a
monatomic metal nitride such as AlN, or a polyatomic metal oxide
selected from the group consisting of SrTiO.sub.3,
PZT(Pb(Zr,Ti)O.sub.3), and BST((Ba,Sr) TiO.sub.3).
[0065] Referring to FIG. 5F, an upper electrode 516 of polysilicon
or a metal is formed on the semiconductor substrate on which the
dielectric film is formed, thereby forming the capacitor of an MIS
or MIM structure.
Third Embodiment
[0066] FIGS. 6A through 6C. are cross-sectional views illustrating
a method of forming a capacitor using a selective metal layer
formation method according to a third embodiment of the present
invention.
[0067] The present embodiment can use the selective metal layer
deposition process twice, to prevent a highly-resistive platinum
silicide PtSix from forming when a platinum film is deposited
selectively on a capacitor lower electrode.
[0068] Referring to FIG. 6A, a lower structure (not shown) such as
a transistor is formed on a semiconductor substrate 600, and an
inter layer dielectric (ILD) 602 is formed on the resultant
structure, using an oxide film or a complex film including the
oxide film. A contact hole exposing a source region of the
transistor is formed on the semiconductor substrate 600. A plug
layer 604 for filling the contact hole is formed using polysilicon.
Titanium nitride TiN being a capacitor lower electrode conductive
layer, connected to the plug layer 604, is blanket-deposited by
chemical vapor deposition (CVD) or physical vapor deposition. The
capacitor lower electrode conductive layer is patterned to form a
capacitor lower electrode conductive film pattern 606. Then, a
platinum film 608 is formed on the surface of the TiN conductive
film pattern 606, using the selective metal layer formation method
shown in FIG. 1.
[0069] The capacitor lower electrode conductive film pattern 606
covered with the platinum film 608 can also be formed by the
following modified method. After the contact hole exposing the
source region of the transistor is formed, the plug layer 604 for
filling the contact hole is formed of polysilicon doped with
impurities having hydrogen termination radical. Titanium is
selectively deposited on the surface of the exposed plug layer 604
by the selective metal layer formation method of FIG. 1, thereby
forming a planer type lower electrode conductive film pattern 606.
The Ti conductive film pattern 606 undergoes nitridation using
NH.sub.3 plasma, or rapid thermal nitridation (RTN), to form TiN on
the resultant structure. Thereafter, the platinum film 608 is
formed by the selective metal layer formation method of FIG. 1,
thereby forming the capacitor lower electrode formed of the
platinum film.
[0070] Referring to FIG. 6B, a dielectric film 610 is deposited on
the platinum film 608. Here, the dielectric film 610 can be a
complex film of an oxide film and a nitride film, or can be formed
of a monatomic metal oxide selected from the group consisting of
Ta.sub.2O.sub.5, TiO.sub.2, ZrO.sub.2, Al.sub.2O.sub.3, and
Nb.sub.2O.sub.5, a monatomic metal nitride such as AlN, or a
polyatomic metal oxide selected from the group consisting of
SrTiO.sub.3, PZT(Pb(Zr,Ti)O.sub.3), and BST((Ba,Sr)TiO.sub.3).
[0071] Referring to FIG. 6C, a capacitor upper electrode 612 is
formed on the semiconductor substrate on which the dielectric film
610 is formed, using polysilicon or a metal such as platinum,
thereby completing the formation of the capacitor of a
semiconductor device using the selective metal layer formation
method according to the third embodiment of the present
invention.
Contact Hole Filling Method Using Selective Metal Layer Formation
Method
[0072] FIG. 7 is a flowchart showing a method of filling a contact
hole using the selective metal layer formation process according to
the present invention.
[0073] Referring to FIG. 7, an insulating film is deposited on a
semiconductor substrate on which a lower structure such as a
transistor bit line is formed, using an interlayer dielectric
(ILD), and a contact hole exposing a lower film is formed by
patterning the ILD, in step 700. Here, the ILD is an oxide film or
a complex film including the oxide film, and the lower film is
formed of TiN, or polysilicon doped with impurities having hydrogen
termination. The lower film can be formed of a refractory metal, a
refractory metal nitride, a refractory carbide, a metal silicide,
conductive Perovskite, a platinum-family metal, a conductive
platinum-family oxide, or a mixture of two or more of the above
materials.
[0074] Here, the contact hole can be a capacitor lower electrode
contact hole directly connected to the semiconductor substrate, or
a metal contact hole. Next, a deposition metal layer of a material
such as titanium (Ti) is formed on the bottom of the contact hole,
using the selective metal layer formation method shown in FIG. 1,
in steps 710, 720 and 730. The deposition metal layer formed of a
conductive material such as titanium (Ti) is used as an ohmic
layer, in a process for filling the contact hole. Then, a barrier
layer such as titanium nitride (TiN) is optionally formed on the
ohmic layer being the deposition metal layer, by RTN, or
nitridation using NH.sub.3 plasma, in step 740. A plug layer is
formed of aluminum (Al) and tungsten (W) on the barrier layer, in
step 750. A conductive layer connected to the plug layer is formed
in step 760, thereby completing the filling of the contact hole.
Here, without specially forming the plug layer, a conductive layer
for filling a contact hole can be formed directly on the barrier
layer or ohmic layer.
[0075] In the step 740, the barrier layer can be formed and
patterned by a blanket method of CVD or sputtering, instead of RTN
or nitridation using NH.sub.3 plasma.
Fourth Embodiment
[0076] FIGS. 8A through 8E are cross-sectional views illustrating a
method of filling a contact hole using a selective metal layer
formation process according to a fourth embodiment of the present
invention.
[0077] Referring to FIG. 8A, an insulating film 802, e.g., an oxide
film or a complex film including the oxide film, is formed on a
semiconductor substrate 800, and a contact hole 804 exposing a
lower film is formed by patterning the insulating film 802. Here,
the contact hole 804 can be a capacitor lower electrode contact
hole connected to the semiconductor substrate, or a metal contact
hole formed in a metal interconnection process.
[0078] Referring to FIG. 8B, a deposition metal layer of a material
such as titanium (Ti) is formed on the semiconductor substrate on
which the contact hole 804 is formed, using the selective metal
layer formation method of FIG. 1. The deposition metal layer serves
as an ohmic layer 806 for improving the conductivity between the
lower film and a conductive material for filling the contact hole,
in the process for filling the contact hole.
[0079] Referring to FIG. 8C, a barrier layer 808 for preventing
diffusion of impurities, e.g., a titanium nitride (TiN) layer, is
optionally formed on the semiconductor substrate on which the ohmic
layer 806 is deposited. The barrier layer can be formed by
nitridation using NH.sub.3 plasma, RTN, or blanket deposition.
[0080] Referring to FIG. 8D, a conductive layer 810 for covering
the surface of the semiconductor substrate while filling the
contact hole is deposited on the semiconductor substrate on which
the barrier layer 808 is formed, thereby completing the contact
hole filling process using the selective metal layer formation
method according to the fourth embodiment of the present
invention.
[0081] FIG. 8E is a cross-sectional view of a modification of FIG.
8D. Here, a plug layer 812 is formed of tungsten (W) or aluminum
(Al) on the semiconductor substrate on which the barrier layer 808
is formed. Next, the plug layer 812 is removed except inside the
contact hole, by etchback or chemical mechanical polishing (CMP).
The conductive layer 810 is then formed in contact with the plug
layer 812.
[0082] Therefore, according to the present embodiment, a relatively
thin ohmic layer can be formed inside a contact hole having a high
aspect ratio without problems such as lifting or corrosion, at a
temperature of 500.degree. C. or lower. This renders unnecessary a
process for controlling the thickness of the ohmic layer, e.g., the
etchback process.
[0083] According to the present invention as described above, since
a metal layer of a material such as titanium (Ti) or platinum (Pt)
is selectively formed of at a temperature of 500.degree. C. or
lower, a lower electrode can be easily formed of a metal instead of
polysilicon in the process for forming a capacitor of a
semiconductor device. Therefore, many problems generated in the
prior art when the lower electrode is formed of titanium or
platinum can be solved. Also, in the process for forming an ohmic
layer on the bottom of a contact hole, the ohmic layer having an
appropriate thickness is formed selectively at low temperature on
only the bottom of the contact hole, thus filling the contact hole
while preventing defects such as lifting or corrosion.
[0084] The present invention is not limited to the above
embodiments, and it is apparent that various modifications within
the technical spirit of the present invention may be effected by
those skilled in the art.
* * * * *