U.S. patent application number 09/151827 was filed with the patent office on 2002-01-03 for method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode.
Invention is credited to DE, VIVEK K., YE, YIBIN.
Application Number | 20020000872 09/151827 |
Document ID | / |
Family ID | 22540396 |
Filed Date | 2002-01-03 |
United States Patent
Application |
20020000872 |
Kind Code |
A1 |
YE, YIBIN ; et al. |
January 3, 2002 |
METHOD AND APPARATUS FOR REDUCING STANDBY LEAKAGE CURRENT USING A
LEAKAGE CONTROL TRANSISTOR THAT RECEIVES BOOSTED GATE DRIVE DURING
AN ACTIVE MODE
Abstract
Standby leakage reduction circuitry that uses boosted gate drive
of a leakage control transistor during an active mode. A circuit
block includes a first leakage control transistor coupled to
receive a first supply voltage and coupled in series with an
internal circuit block that performs a particular function. A gate
drive circuit is included to apply a first boosted gate drive
voltage to a gate of the first leakage control transistor during an
active mode of the internal circuit block. The gate drive circuit
furthers applies a standby gate voltage to the gate during a
standby mode of the internal circuit block, the standby gate
voltage to cause a gate to source voltage of the leakage control
transistor to be reverse-biased.
Inventors: |
YE, YIBIN; (PORTLAND,
OR) ; DE, VIVEK K.; (BEAVERTON, OR) |
Correspondence
Address: |
CYNTHIA THOMAS FAATZ
BLAKELY SOKOLOFF TAYLOR & ZAFMAN
12400 WILSHIRE BOULEVARD
SEVENTH FLOOR
LOS ANGELES
CA
900251026
|
Family ID: |
22540396 |
Appl. No.: |
09/151827 |
Filed: |
September 11, 1998 |
Current U.S.
Class: |
327/544 |
Current CPC
Class: |
G11C 2207/2227 20130101;
G05F 3/205 20130101 |
Class at
Publication: |
327/544 |
International
Class: |
G05F 001/10 |
Claims
What is claimed is:
1. A circuit comprising: a leakage control transistor coupled to
receive a supply voltage and to be coupled in series with an
internal circuit block that performs a particular function; and a
gate drive circuit to apply a boosted gate drive voltage to a gate
of the leakage control transistor during an active mode of the
internal circuit block and to apply a standby gate voltage to the
gate during a standby mode of the internal circuit block.
2. The circuit block of claim 1 wherein the internal circuit block
includes transistors and wherein the leakage control transistor has
a threshold voltage substantially equal to at least one transistor
in the internal circuit block.
3. The circuit block of claim 1 wherein the leakage control
transistor includes first and second leakage control transistors,
the first leakage control transistor being coupled to receive a
first supply voltage, the second leakage control transistor being
coupled to receive a second supply voltage, and wherein the gate
drive circuit includes first and second gate drive circuits, the
first gate drive circuit to apply a first boosted gate drive to a
gate of the first leakage control transistor during the active mode
of the internal circuit block and to apply a first standby gate
voltage to the gate of the first leakage control transistor during
the standby mode of the internal circuit block, the second gate
drive circuit to apply a second boosted gate drive voltage to a
gate of the second leakage control transistor during the active
mode of the internal circuit block and to apply a second standby
gate voltage to the gate of the second leakage control transistor
during the standby mode of the internal circuit block.
4. The circuit block of claim 3 wherein the first leakage control
transistor is an n-type leakage control transistor, the first
supply voltage is a ground supply voltage, and the internal circuit
block includes at least one n-type transistor and at least one
p-type transistor, a threshold voltage of the first leakage control
transistor being substantially equal to a threshold voltage of the
at least one n-type transistor, and wherein the second leakage
control transistor is a p-type leakage control transistor, the
second supply voltage is a power supply voltage (VDD), a threshold
voltage of the second leakage control transistor being
substantially equal to a threshold voltage of the at least one
p-type transistor.
5. The circuit block of claim 4 wherein the first boosted gate
drive voltage is equal to the second standby gate voltage and the
first standby gate voltage is equal to the second boosted gate
drive voltage.
6. The circuit block of claim 1 wherein the standby mode is
indicated by a signal and the active mode is indicated by the
complement of the signal, and wherein the gate drive circuit is
responsive to the signal to apply the boosted gate drive voltage
during the active mode and the standby gate voltage during the
standby mode.
7. A circuit comprising: internal circuitry to perform a particular
function; and a first leakage control transistor having a first
terminal coupled to the internal circuitry, a second terminal
coupled to receive a first supply voltage and a gate, the gate
being coupled to receive a first boosted gate drive voltage when
the internal circuitry is in an active mode, the gate being coupled
to receive a first standby gate voltage when the internal circuitry
is in a standby mode.
8. The circuit of claim 7 wherein the internal circuitry includes
transistors, the leakage control transistor having a same threshold
voltage as at least one of the transistors in the internal
circuitry.
9. The circuit of claim 7 including a second leakage control
transistor having a first terminal coupled to the internal
circuitry, a second terminal coupled to receive a second supply
voltage, and a gate, the gate being coupled to receive a second
boosted gate drive voltage when the internal circuitry is in an
active mode and a second standby gate voltage when the internal
circuitry is in a standby mode.
10. The circuit of claim 9 wherein the internal circuitry includes
transistors, the first and second leakage control transistors each
having a same threshold voltage as at least one of the transistors
in the internal circuitry.
11. The circuit of claim 7 wherein the first supply voltage is a
ground supply voltage and the first leakage control transistor is
an n-type transistor.
12. The circuit of claim 9 wherein the first supply voltage is a
ground supply voltage, the second supply voltage is a power supply
voltage, the first leakage control transistor is an n-type
transistor and the second leakage control transistor is a p-type
leakage control transistor.
13. The circuit of claim 9 wherein the first boosted gate drive
voltage equals the second standby gate voltage and the second
boosted gate drive voltage equals the first standby gate
voltage.
14. A method for controlling leakage in a circuit block, the method
comprising steps of: during a standby mode of the circuit block,
reverse-biasing a gate to source voltage of a first leakage control
transistor coupled to the circuit block; and during an active mode
of the circuit block, boosting a gate drive of the first leakage
control transistor.
15. The method of claim 14 further including the steps of: during
the standby mode of the circuit block, reverse-biasing a gate to
source voltage of a second leakage control transistor coupled to
the circuit block; and during the active mode of the circuit block,
boosting a gate drive of the second leakage control transistor.
16. The method of claim 14 wherein the step of boosting the gate
drive includes a step of coupling the circuit block to a first
supply voltage during the active mode of the circuit block, and the
step of reverse-biasing includes a step of decoupling the circuit
block from the first supply voltage during the standby mode.
17. The method of claim 14 further including steps of coupling the
circuit block to first and second supply voltages during the active
mode of the circuit block; and decoupling the circuit block from
the first and second supply voltages during the standby mode of the
circuit block.
18. A mobile computer system comprising: a bus to communicate
information; a battery coupled to the bus; an integrated circuit
coupled to the bus to provide a standby signal to indicate a
standby mode; and a processor coupled to the bus, the processor
including a circuit block, the circuit block including a first
leakage control transistor coupled to receive a first supply
voltage and coupled in series with an internal circuit block that
performs a particular function, and a first gate drive circuit to
apply a first boosted gate drive voltage to a gate of the first
leakage control transistor during an active mode, the gate drive
circuit further to apply a first standby voltage to the gate during
the standby mode, the first standby gate voltage causing a gate to
source voltage of the first leakage control transistor to be
reverse-biased.
19. The mobile computer system of claim 18 wherein the internal
circuit block includes transistors and wherein the first leakage
control transistor has a threshold voltage substantially equal to
at least one transistor in the internal circuit block.
20. The mobile computer system of claim 18 wherein the circuit
block further includes a second leakage control transistor coupled
to receive a second supply voltage and coupled in series with the
internal circuit block; and a second gate drive circuit to apply a
second boosted gate drive voltage to a gate of the second leakage
control transistor during the active mode, the gate drive circuit
further to apply a second standby voltage to the gate during the
standby mode, the second standby gate voltage causing a gate to
source voltage of the second leakage control transistor to be
reverse-biased.
21. The mobile computer system of claim 20 wherein the first
leakage control transistor is an n-type leakage control transistor,
the first supply voltage is a ground supply voltage, and the
internal circuit block includes at least one n-type transistor and
at least one p-type transistor, a threshold voltage of the first
leakage control transistor being substantially equal to a threshold
voltage of the at least one n-type transistor, and wherein the
second leakage control transistor is a p-type leakage control
transistor, the second supply voltage is a power supply voltage
(VDD), a threshold voltage of the second leakage control transistor
being substantially equal to a threshold voltage of the at least
one p-type transistor.
Description
BACKGROUND
[0001] 1. Field
[0002] An embodiment of the present invention relates to integrated
circuits, and more particularly, to a method and apparatus for
reducing standby leakage current using a leakage control transistor
that receives boosted gate drive during an active mode.
[0003] 2. Discussion of Related Art
[0004] With the scaling of semiconductor process technologies,
threshold voltages of semiconductor circuits are typically being
reduced with reductions in supply voltages in order to maintain
circuit performance. Lower transistor threshold voltages lead to
significant increases in leakage current due to the exponential
nature of sub-threshold conductance. Higher leakage currents lead
to increase power dissipation which is undesirable for many
semiconductor circuit applications. Higher leakage currents can be
particularly problematic for mobile and handheld applications, for
example.
[0005] One approach to addressing this issue has been to use
multi-threshold voltage complementary metal oxide semiconductor
(MTCMOS). An example of one MTCMOS scheme is shown in FIG. 1. In
the MTCMOS approach of FIG. 1, low threshold voltage transistors
are used for an internal circuit block 105 which is coupled to
virtual power supply lines WD and/or VGD. One or more higher
threshold voltage transistors H1 and/or H2 are coupled in series
between the internal circuit block 105 and the power supply lines
VDD and/or GND, respectively. A standby signal STDBY and its
complement STDBY#, which are used for active and standby mode
control of the internal circuit block 240, are coupled to the gates
of H1 and H2, respectively.
[0006] When STDBY is low, the internal circuit block 105 is in an
active mode and H1 and H2 are turned on. VVD and VGD then function
as the power supply lines for the internal circuit block 105. When
STDBY is high, the internal circuit block 105 is in a standby mode
and H1 and H2 are turned off. Leakage current of the internal
circuit block 105 is suppressed due to the high threshold voltages
of H1 and H2.
[0007] A disadvantage of this approach is that the higher threshold
voltage devices H1 and H2 compromise the performance of the
internal circuit block 105. Additionally, to maintain a low voltage
drop between the power supply lines VDD and GND and the virtual
power supply lines VVD and VGD, respectively, the linking devices
H1 and H2 should be very large to reduce their resistance. Also,
semiconductor processing of MTCMOS circuits is complicated by the
need to provide transistors having multiple threshold voltage on
the same integrated circuit die.
[0008] Another technique to reduce circuit leakage current uses
substrate body bias to vary the threshold voltage of transistors in
a circuit block for different modes. In this approach, during an
active mode, a control circuit applies a voltage to the transistor
bodies to zero- or reverse-bias the bodies with respect to the
transistors. Upon entering a standby mode, the control circuit
changes the substrate bias voltage to cause a reverse bias or
deepen an existing reverse bias in the transistor bodies. In this
manner, the threshold voltages of the transistors are increased
during the standby mode to reduce or cut off leakage current.
[0009] A disadvantage of this approach is that a large change in
body bias is required to change the transistor threshold voltages
by even a small amount. Further, when changing from active mode to
standby mode and vice versa, huge capacitances in transistor wells
are switched from one voltage to another. Thus, significant power
is dissipated during each mode transition.
SUMMARY OF THE INVENTION
[0010] A method and apparatus for reducing standby leakage current
using a leakage control transistor that receives boosted gate drive
during an active mode are described.
[0011] For one embodiment, a circuit includes a leakage control
transistor coupled to receive a supply voltage and to be coupled in
series with an internal circuit block that performs a particular
function. The circuit further includes a gate drive circuit to
apply a boosted gate drive voltage to a gate of the leakage control
transistor during an active mode of the internal circuit block and
to apply a standby voltage to the gate during a standby mode of the
internal circuit block.
[0012] Other features and advantages of the present invention will
be apparent from the accompanying drawings and from the detailed
description that follows below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The present invention is illustrated by way of example and
not limitation in the figures of the accompanying drawings in which
like references indicate similar elements, and in which:
[0014] FIG. 1 is a schematic diagram showing a prior
multi-threshold complementary metal oxide semiconductor approach to
reducing standby leakage current.
[0015] FIG. 2 is a block diagram showing an example of a computer
system that may be advantageously used with one embodiment of the
standby leakage reduction circuitry.
[0016] FIG. 3 is a schematic diagram showing one embodiment of
standby leakage reduction circuitry of one embodiment in more
detail.
[0017] FIG. 4 is a schematic diagram showing an alternative
embodiment of the standby leakage reduction circuitry including two
leakage control transistors and associated gate drive
circuitry.
[0018] FIG. 5 is a schematic diagram showing another alternative
embodiment of the standby leakage reduction circuitry including two
leakage control transistors and associated gate drive
circuitry.
[0019] FIG. 6 is a flow diagram showing one embodiment of the
standby leakage reduction method using boosted gate drive of
leakage control transistors.
DETAILED DESCRIPTION
[0020] A method and apparatus for reducing standby leakage current
using a leakage control transistor that receives boosted gate drive
during an active mode are described. In the following description,
particular types of circuits are described for purposes of
illustration. It will be appreciated, however, that other
embodiments are applicable to other types of circuits.
[0021] For one embodiment, a circuit block includes an internal
circuit block provided to perform a particular function. A first
leakage control transistor has a first terminal to be coupled to
the internal circuit block and a second terminal coupled to receive
a first supply voltage and a gate. The gate of the first leakage
control transistor is coupled to receive a first gate voltage when
the internal circuit block is in an active mode and a second gate
voltage when the internal circuit block is in a standby mode. The
first gate voltage (referred to herein as a boosted gate drive
voltage) is at a level to cause a boosted gate drive of the leakage
control transistor, while the second gate voltage (referred to
herein as a standby gate voltage) is at a level to cause a
gate-to-source voltage (Vgs) of the first leakage control
transistor to be reverse-biased.
[0022] One embodiment of the boosted gate drive enables a smaller
transistor to be used during the active mode to achieve a same
on-resistance value as a larger transistor that does not use a
boosted gate drive. Reverse-biasing Vgs of the first leakage
control transistor during the standby mode reduces standby leakage
current of the internal circuit block as compared to the standby
leakage current of the internal circuit block if it were directly
connected to the first supply voltage.
[0023] FIG. 2 is a block diagram showing an example of a mobile
computer system 200 (e.g. laptop, notebook, or handheld computer)
in which one embodiment of a standby leakage control approach using
boosted gate drive may be implemented. The computer system 200
includes a bus 205 for communicating information among various
components of the computer system 200. A processor 210 for
processing instructions, one or more memories 215 to store
instructions and information for use by the processor 210, one or
more peripheral devices 220, a system clock 225, a system voltage
supply 230, and a battery 232 are coupled to the bus 205 for one
embodiment.
[0024] The system clock 225 provides a system clock signal 227 to
one or more of the components of the computer system 200. The
system voltage supply 230 provides a system operating voltage for
the computer system 200. The peripheral device(s) 220 may provide a
system standby signal 233 to cause the system 200 to enter a lower
power mode in response to particular events.
[0025] For one embodiment, the processor 210 includes a circuit
block 234 including standby leakage reduction circuitry 235 to
reduce leakage current of an internal circuit block 240 during a
standby mode. The standby leakage reduction circuitry 235 includes
gate drive circuitry for one embodiment that provides a boosted
gate drive during an active mode of the internal circuit block 240
to reduce the on-resistance of the standby leakage reduction
circuitry 235 as described in more detail below. A circuit block,
as the term is used herein, refers to interconnected circuitry
having a set of inputs and a set of outputs wherein the circuit
block is provided to perform one or more particular functions. A
circuit block may be in the form of a functional unit block (FUB),
for example, and typically includes many transistors forming
various logic gates.
[0026] It will be appreciated that, for other embodiments, the
standby leakage reduction circuitry 235 with boosted gate drive may
be used with circuit blocks other than the internal circuit block
240 on other types of integrated circuit devices including, for
example, chipsets and other peripheral chips.
[0027] It will also be appreciated that systems other than mobile
or handheld computer systems, or computer systems configured in
another manner than the computer system 200 of FIG. 2, may also be
used with various embodiments.
[0028] FIG. 3 is a schematic diagram showing the standby leakage
reduction circuitry 235 of one embodiment in more detail. The
standby leakage reduction circuitry 235 includes voltage increasing
circuitry 305, an n-type gate drive circuit 310, voltage decreasing
circuitry 315 and a leakage control transistor L.sub.1.
[0029] The leakage control transistor L.sub.1 has a first terminal,
a source terminal in this example, coupled to a virtual ground line
VGD in series with the internal circuit block 240, a second
terminal coupled to receive a ground supply voltage GND and a gate
coupled to the n-type gate drive circuit 310. The n-type gate drive
circuit 310 is referred to as such because it drives the gate of
the n-type leakage control transistor L.sub.1. For one embodiment,
the n-type leakage control transistor L.sub.1 has a same threshold
voltage as one or more n-type transistors in the internal circuit
block 240 where the internal circuit block includes both n- and
p-type transistors. For one embodiment, the n-type leakage control
transistor L.sub.1 has the same threshold voltage as a majority of
n-type transistors in the internal circuit block 240.
[0030] The voltage increasing circuitry 305 is coupled to receive a
supply voltage VDD which is also used to power the internal circuit
block 240. The supply voltage VDD may be provided by the system
voltage supply 230 (FIG. 2), or VDD may be a separate supply
voltage used for circuitry internal to the processor 210 (FIG. 2).
The voltage increasing circuitry 305 provides to the n-type gate
drive circuit 310 an output voltage VDD+V.sub.ACTIVE that is higher
than the supply voltage VDD.
[0031] For one embodiment, the voltage increasing circuitry 305
includes a charge pump to supply the higher output voltage
VDD+V.sub.ACTIVE. The use of a charge pump and associated circuitry
to provide and regulate a pumped output voltage is well-known to
those of ordinary skill in the art and is not described in detail
herein. An example of a charge pump that may be used for the
voltage increasing circuitry 305 is provided in U.S. Pat. No.
5,524,266 to Tedrow et al. and assigned to the assignee of the
present invention. For alternative embodiments, the voltage
increasing circuitry 305 includes a switch capacitor, a different
type of charge pump, or another means of providing a higher output
voltage from a given input voltage.
[0032] The voltage decreasing circuitry 315 receives the ground
supply voltage GND and provides to the n-type gate drive circuit
310 a voltage -V.sub.STDBY that is lower than GND. For one
embodiment, the voltage decreasing circuitry 315 includes a
negative charge pump to provide the lower output voltage
-V.sub.STDBY from the ground input voltage. The use of a negative
charge pump and associated circuitry to provide and regulate a
selected lower output voltage is well-known to those of ordinary
skill in the art and is not described in detail herein. An example
of a negative charge pump that may be used in the voltage
decreasing circuitry 315 is described in U.S. Pat. No. 5,532,915 to
Pantelakis et al. and assigned to the assignee of the present
invention. For alternative embodiments, a switch capacitor, a
different type of negative charge pump, or another means of
providing a lower output voltage from a given input voltage may be
used to provide the voltage decreasing circuitry 315.
[0033] The n-type gate drive circuit 310 receives a standby signal
STDBY. The STDBY signal may be a system standby signal such as the
system standby signal 233 (FIG. 2), a local standby signal or any
type of signal that causes the circuit block 234 to enter a lower
power state at various times when the signal is asserted.
[0034] For one embodiment, the STDBY signal is a clock gating
signal used to selectively prevent specific circuitry in the
circuit block 234 from being clocked. In this manner, assertion of
the STDBY signal is used to reduce power dissipation of the circuit
block 234 and/or other circuitry at particular times. For one
embodiment, when the STDBY signal is not asserted, the circuit
block 234, and thus, the internal circuit block 240, is in an
active mode.
[0035] For an alternative embodiment, an ACTIVE signal or any type
of signal that puts the circuit block 234 into an active mode when
asserted may be used in place of a STANDBY signal such that a low
power mode is entered when the ACTIVE signal is deasserted.
Whatever signal is used, it is desirable during the lower power
mode to have the power dissipation of the circuit block 234, and in
particular, the internal circuit block 240, as low as possible.
[0036] For the embodiment shown in FIG. 3, the STDBY signal
controls the operation of the n-type gate drive circuit 310. When
the STDBY signal is asserted (i.e. the circuit block 234 enters a
standby mode), the voltage -V.sub.STDBY supplied by the voltage
decreasing circuitry 315 is applied to the gate of the leakage
control transistor L.sub.1. Application of the standby gate voltage
-V.sub.STDBY, which is below the supply voltage GND, causes the
gate-to-source voltage Vgs of the leakage control transistor
L.sub.1 to be reverse-biased. Reverse-biasing of the gate-to-source
voltage Vgs cuts off the leakage path for the internal circuit
block 240 during the standby mode such that standby leakage current
of the circuit block 234 is significantly reduced.
[0037] When the STDBY signal is deasserted (indicating an active
mode of the circuit block 234), the voltage VDD+V.sub.ACTIVE
supplied by the voltage increasing circuitry 305 is applied to the
gate of the leakage control transistor L.sub.1. Application of the
voltage VDD+V.sub.ACTIVE to the gate of the leakage control
transistor L.sub.1 causes a boosted gate drive of the leakage
control transistor L.sub.1. Boosted gate drive refers to driving
the gate of a transistor using a boosted gate drive voltage higher
than the high supply voltage used to drive the surrounding
circuitry for an n-type transistor, or for a p-type transistor,
using a boosted gate drive voltage lower than the low supply
voltage used to drive the surrounding circuitry. Boosted gate drive
of the transistor L.sub.1 reduces its resistance during an active
mode of the circuit block 234 such that the transistor L.sub.1 can
be smaller in size than a transistor with the same on-resistance
where boosted gate drive is not used.
[0038] For one embodiment, the n-type gate drive circuit 310
includes a p-type transistor T.sub.1 and an n-type transistor
T.sub.2 coupled to form an inverter to provide the above
functionality. It will be appreciated that the n-type gate drive
circuit 310 may be configured in another manner for alternative
embodiments to provide functionality similar to that of the
configuration shown in FIG. 3.
[0039] The values of V.sub.ACTIVE and V.sub.STDBY may vary for
different embodiments depending on several factors including, for
example, the operating voltage and the process with which the
circuit block 234 is fabricated. The higher the magnitude of
V.sub.ACTIVE, the lower the on-resistance of the leakage control
transistor L.sub.1 and thus, the smaller the leakage control
transistor L.sub.1 can be to provide a desired resistance. For one
embodiment, V.sub.ACTIVE is as high as possible such that the sum
of V.sub.ACTIVE and VDD is not higher than the highest L.sub.1 gate
voltage provided for by the process (i.e. application of the
voltage VDD+V.sub.ACTIVE will not cause the L.sub.1 gate oxide to
break down). In this manner, the reliability of the leakage control
transistor L.sub.1 is not adversely affected during active modes
when boosted gate drive is used. For alternative embodiments,
V.sub.ACTIVE may have a smaller magnitude.
[0040] A higher magnitude of V.sub.STDBY provides a lower leakage
current of the circuit block 240. Thus, for one embodiment, similar
to the case above, the magnitude of V.sub.STDBY is as high as
possible such that application of the voltage, -V.sub.STDBY, at the
gate of the leakage control transistor L.sub.1 during a standby
mode does not compromise the reliability of the leakage control
transistor L.sub.1. The magnitude of V.sub.STDBY may be different
for alternative embodiments.
[0041] FIG. 4 shows an alternative embodiment of the standby
leakage reduction circuitry 235 that may be used to reduce the
leakage current of a circuit block such as the internal circuit
block 240. For the embodiment shown in FIG. 4, in addition to the
leakage control transistor L.sub.1, voltage increasing circuitry
305, n-type gate drive circuit 310 and voltage decreasing circuitry
315, the standby leakage reduction circuitry 235 includes a second
leakage control transistor L.sub.2, second voltage increasing
circuitry 405, a p-type gate drive circuit 410, and second voltage
decreasing circuitry 415.
[0042] The leakage control transistor L.sub.2 has a first terminal
coupled to a virtual power supply line VVD in series with the
internal circuit block 240, a second terminal, a source terminal in
this example, coupled to receive the supply voltage VDD, and a gate
coupled to the p-type gate drive circuit 410. The p-type gate drive
circuit 410 is referred to as such because it drives the gate of
the p-type leakage control transistor L.sub.2. For one embodiment,
the leakage control transistor L.sub.2 has a same threshold voltage
as one or more p-type transistors in the internal circuit block 240
where the internal circuit block 240 includes both p- and n-type
transistors. For one embodiment, the leakage control transistor
L.sub.2 has the same threshold voltage as a majority of p-type
transistors in the internal circuit block 240.
[0043] The voltage increasing circuitry 405 is coupled to receive
the supply voltage VDD. The voltage increasing circuitry 405
provides to the p-type gate drive circuit 410 an output voltage
VDD+V.sub.STDBY that is higher than the supply voltage VDD.
[0044] For one embodiment, the voltage increasing circuitry 405
includes a charge pump to supply the higher output voltage and may
be configured in a similar manner to the voltage increasing
circuitry 305 of FIG. 3. For alternative embodiments, the voltage
increasing circuitry 405 includes a switch capacitor, a different
type of charge pump, or another means of providing a higher output
voltage from a given input voltage.
[0045] The voltage decreasing circuitry 415 receives the ground
supply voltage GND and provides to the p-type gate drive circuit
410 a voltage -V.sub.ACTIVE that is lower than GND. For one
embodiment, the voltage decreasing circuitry 415 is configured in a
manner similar to the voltage decreasing circuitry 315 of FIG. 3
and includes a negative charge pump to provide the lower output
voltage from the ground input voltage. For alternative embodiments,
a switch capacitor, a different type of negative charge pump, or
another means of providing a lower output voltage from a given
input voltage may be used to provide the voltage decreasing
circuitry 415.
[0046] The p-type gate drive circuit 410 of one embodiment receives
a complement of the standby signal STDBY shown as STDBY# and is
configured in a similar manner to the n-type gate drive circuit
310. For an alternative embodiment, the p-type gate drive circuit
410 may be configured with the locations of the p-type and n-type
transistors reversed and receive the STDBY signal instead of the
STDBY# signal. For other alternative embodiments, the p-type gate
drive circuit 410 may be configured in another manner to provide
similar functionality.
[0047] For the embodiment shown in FIG. 4, the STDBY# signal
controls the operation of the p-type gate drive circuit 410. When
the STDBY signal is asserted (i.e. the circuit block 234 enters a
standby mode), the STDBY# signal is low causing the voltage
VDD+V.sub.STDBY supplied by the voltage increasing circuitry 405 to
be applied to the gate of the p-type leakage control transistor
L.sub.2. Application of the standby gate voltage VDD+V.sub.STDBY,
which is higher than the supply voltage VDD, causes the
gate-to-source voltage Vgs of the leakage control transistor
L.sub.2 to be reverse-biased.
[0048] Also as described above with reference to FIG. 3, when the
STDBY signal is asserted, the standby gate voltage -V.sub.STDBY is
applied at the gate of the leakage transistor L.sub.1 causing the
gate to source voltage Vgs of L.sub.1 to be reverse-biased.
Reverse-biasing of the gate-to-source voltages Vgs of both L.sub.1
and L.sub.2 for the embodiment shown in FIG. 4 cuts off the leakage
path for the internal circuit block 240 during the standby mode. In
this manner, the standby leakage current of the circuit block 234
is significantly reduced.
[0049] When the STDBY signal is deasserted indicating an active
mode of the circuit block 234, the STDBY# signal is high causing
the boosted gate drive voltage -V.sub.ACTIVE supplied by the
voltage decreasing circuitry 415 to be applied at the gate of the
leakage control transistor L.sub.2. Application of the voltage
-V.sub.ACTIVE to the gate of the leakage control transistor L.sub.2
causes a boosted gate drive of the transistor L.sub.2 because
-V.sub.ACTIVE is below the ground supply voltage GND. In this
manner, the resistance of the leakage control transistor L.sub.2 is
reduced during an active mode of the circuit block 234 such that
the transistor L.sub.2 can be smaller in size than a transistor
with the same on-resistance where boosted gate drive is not
used.
[0050] Additionally, when the STDBY signal is deasserted, the
n-type gate drive circuit 340 causes the boosted gate drive voltage
-V.sub.STDBY to be applied at the gate of the leakage control
transistor L.sub.1 as described above. In this manner, the drive of
the gate of L.sub.1 is boosted to also reduce its resistance.
[0051] The magnitudes of V.sub.ACTIVE and V.sub.STDBY may be chosen
in a similar manner to that described above for the embodiment
shown in FIG. 3. For the embodiment shown in FIG. 4 there is the
additional constraint that it is preferable for -V.sub.ACTIVE to be
higher (or more positive) than a voltage that causes the gate oxide
of the p-type leakage control transistor L.sub.2 to break down to
avoid reliability problems. Similarly, it is preferable for
V.sub.STDBY to be selected such that the voltage VDD+V.sub.STDBY
does not cause the gate oxide of L.sub.2 to breakdown. For some
embodiments, to provide a selected reliability level, the
magnitudes of V.sub.STDBY and V.sub.ACTIVE may be selected to be
even smaller such that there is an additional guardband between the
voltage applied to the leakage control transistor gates and the
voltage at which the gate oxides break down.
[0052] For an alternative embodiment, V.sub.STDBY and V.sub.ACTIVE
may be selected to be equal to each other. An example of such an
embodiment is shown in FIG. 5. For the embodiment of FIG. 5,
V.sub.ACTIVE equals V.sub.STDBY and is shown as V.sub.ADJ. For this
embodiment, only one voltage increasing circuit 505 and only one
voltage decreasing circuit 515 are used thereby reducing the
circuit space of the standby leakage reduction circuitry 235. The
voltage increasing circuitry 505 receives the supply voltage VDD
and provides an output voltage VDD+V.sub.ADJ which is higher than
VDD. The voltage decreasing circuitry 515 receives the ground
supply voltage GND and provides an output voltage -V.sub.ADJ which
is lower than ground. The remainder of the circuit block 234
operates in a similar manner to the embodiment shown in FIG. 4.
[0053] For this embodiment, the voltage increasing and decreasing
circuitry may be configured in the manner described above with
reference to FIGS. 3 and 4. Further, the magnitude of V.sub.ADJ may
be selected such that the magnitudes of the voltages applied to the
gates of the leakage control transistors L.sub.1 and L.sub.2 during
both standby and active modes are as high as possible within
process reliability constraints. Other values for V.sub.ADJ may
also be used for alternative embodiments.
[0054] It will be appreciated that, for another embodiment, a
single leakage control transistor L.sub.2 may be coupled between a
power supply line VDD and a virtual power supply line VVD while the
internal circuit block 240 is directly coupled to ground (i.e. the
leakage control transistor L.sub.1 and n-type gate drive circuit
310 are not included). For such an embodiment, the p-type gate
drive circuit 410 operates in a similar manner to the p-type gate
drive circuit 410 of FIG. 4 to boost the gate drive of L.sub.2
during an active mode of the internal circuitry 240 and to cut off
the leakage path of the internal circuitry 240 during a standby
mode.
[0055] FIG. 6 is a flow diagram showing the standby leakage
reduction and boosted gate drive method of one embodiment. In step
605, an active mode of a circuit block begins. In step 610, the
gate drive of a first leakage control transistor is boosted to
couple the circuit block to a first supply voltage. Similarly, in
step 615, the gate drive of a second leakage control transistor is
boosted to couple the circuit block to a second supply voltage.
[0056] When a standby mode begins in step 620, a gate-to-source
voltage of the first leakage control transistor is reverse-biased
to decouple the circuit block from the first supply voltage in step
625 and in step 626, a gate-to-source voltage of a second leakage
control transistor is reverse-biased to decouple the circuit block
from the second supply voltage.
[0057] Steps 605-615 may be repeated when the circuit block
re-enters an active mode while steps 620-630 are repeated upon
re-entering a standby mode.
[0058] For other embodiments, the standby leakage reduction and
boosted gate drive method may include additional steps not shown in
FIG. 6. Further, for some embodiments, not all steps shown in FIG.
6 are performed.
[0059] Various embodiments described above reduce leakage of a
circuit block during a standby mode. Further, the leakage control
transistors of some embodiments have the same threshold voltage as
transistors of surrounding circuitry. In this manner, the process
used to manufacture an integrated circuit including such circuitry
does not have to provide for multiple threshold voltages for n-type
and/or p-type transistors to implement the standby leakage
approaches described.
[0060] Additionally, the boosted gate drive of various embodiments
allows a smaller leakage control transistor to be used while still
providing a low resistance between voltage supply lines and the
circuitry to be controlled. This helps to save valuable integrated
circuit space, especially where the standby leakage control
approaches described above are used in many circuit blocks on a
single integrated circuit die.
[0061] By reducing the standby leakage current of circuit blocks
using embodiments described herein, it may be possible to alleviate
the need for higher threshold voltage transistors for leakage
reduction in future technologies.
[0062] In the foregoing specification, the invention has been
described with reference to specific exemplary embodiments thereof.
It will, however be appreciated that various modifications and
changes may be made thereto without departing from the broader
spirit and scope of the invention as set forth in the appended
claims. The specification and drawings are, accordingly, to be
regarded in an illustrative rather than a restrictive sense.
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