U.S. patent application number 09/293875 was filed with the patent office on 2001-12-20 for cooling/heating apparatus for semiconductor processing liquid.
Invention is credited to MIKI, HIROYUKI.
Application Number | 20010052409 09/293875 |
Document ID | / |
Family ID | 15385277 |
Filed Date | 2001-12-20 |
United States Patent
Application |
20010052409 |
Kind Code |
A1 |
MIKI, HIROYUKI |
December 20, 2001 |
COOLING/HEATING APPARATUS FOR SEMICONDUCTOR PROCESSING LIQUID
Abstract
In order to provide a cooling/heating apparatus for a
semiconductor processing liquid being highly resistant to corrosive
chemicals and free from elution of harmful impurities, a heat
exchanging substrate 3 is formed by heat-depositing a
fluorine-contained resin sheet 3B to a processing liquid contact
surface of a graphite substrate 3A.
Inventors: |
MIKI, HIROYUKI;
(TSUKUBA-GUN, JP) |
Correspondence
Address: |
OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC
FOURTH FLOOR
1755 JEFFERSON DAVIS HIGHWAY
ARLINGTON
VA
22202
US
|
Family ID: |
15385277 |
Appl. No.: |
09/293875 |
Filed: |
April 19, 1999 |
Current U.S.
Class: |
165/80.4 ;
165/133; 165/185; 165/905 |
Current CPC
Class: |
Y10S 165/905 20130101;
F28F 21/06 20130101; F28F 21/02 20130101 |
Class at
Publication: |
165/80.4 ;
165/185; 165/905; 165/133 |
International
Class: |
F28F 007/00; F28F
013/18; F28F 019/02 |
Foreign Application Data
Date |
Code |
Application Number |
May 27, 1998 |
JP |
10-145439 |
Claims
What Is claims Is:
1. A cooling/heating apparatus for a semiconductor processing
liquid cooling or heating the semiconductor processing liquid by
contacting heat exchanging substrates, wherein said heat exchanging
substrates are formed by heat-depositing a fluorine-contained resin
sheet to a processing liquid contact surface of a graphite
substrate.
2. A cooling/heating apparatus for a semiconductor processing
liquid cooling or heating the semiconductor processing liquid by
contacting heat exchanging substrates, wherein said heat exchanging
substrates are formed by providing an amorphous carbon layer over a
processing liquid contact surface of a graphite substrate and
heat-depositing a fluorine-contained resin sheet to said amorphous
carbon layer.
3. A cooling/heating apparatus for a semiconductor processing
liquid cooling or heating the semiconductor processing liquid by
contacting heat exchanging substrates, wherein said heat exchanging
substrates are formed by heat-depositing a fluorine-contained resin
sheet to a processing liquid contact surface of a vitrified carbon
substrate.
4. A cooling/heating apparatus for a semiconductor processing
liquid cooling or heating the semiconductor processing liquid by
contacting heat exchanging substrates, wherein said heat exchanging
substrates are formed by heat-depositing a fluorine-contained resin
sheet to a processing liquid contact surface of a silicon carbide
substrate.
5. A cooling/heating apparatus for a semiconductor processing
liquid cooling or heating the semiconductor processing liquid by
contacting heat exchanging substrates, wherein said heat exchanging
substrates are formed by providing a silicon carbide layer over a
processing liquid contact surface of a graphite substrate and
heat-depositing a fluorine-contained resin sheet to said silicon
carbide layer.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a cooling/heating apparatus
for a semiconductor processing liquid applied to a cooling/heating
unit of a thermoregulator used to control temperature of
semiconductor processing corrosive chemicals.
PRIOR ART
[0002] In a cooling/heating apparatus for a semiconductor
processing liquid having heat exchanging substrates to cool or heat
a corrosive semiconductor processing liquid so as to keep the
liquid at a designated temperature, most of the heat exchanging
substrates used are generally configured such that a sheet of
fluorine-contained resin (for which the trade name is TEFLON)
etched with plasma or sodium is joined by the medium of an adhesive
layer of epoxy resin or other adhesives to a processing liquid
contact surface side of a stainless steel plate or a graphite
substrate. In the case of these conventional heat exchanging
substrates, however, when highly corrosive chemicals are cooled or
heated, the chemicals, even though slightly, infiltrate through the
fluorine-contained resin sheet, which may cause the adhesive to be
dissolved out of the adhesive layer between the stainless steel
plate or the graphite substrate and the sheet. Particularly, when
using a stainless steel plate, the stainless steel is attacked by
the chemicals as the adhesive is dissolved out and a metallic ion
may subsequently be dissolved in the chemicals as an impurity.
Also, in either case, there is a problem pointed out that chemicals
applicable can be limited depending on thermal resistance of
adhesives.
SUMMARY OF THE INVENTION
[0003] It is therefore an object of the present invention to
provide a cooling/heating apparatus for a semiconductor processing
liquid having heat exchanging substrates which is highly resistant
to corrosive chemicals and is free from elution of harmful
impurities such as a heavy metal ion.
[0004] To achieve the above object, according to a first embodiment
of the present invention, there is provided a cooling/heating
apparatus for a semiconductor processing liquid to cool or heat by
allowing heat exchanging substrates to contact the semiconductor
processing liquid, wherein the heat exchanging substrates are
formed by heat-depositing a fluorine-contained resin sheet to a
processing liquid contact surface of a graphite substrate.
[0005] Also, according to a second embodiment of the present
invention, there is provided a cooling/heating apparatus for a
semiconductor processing liquid, wherein heat exchanging substrates
are formed by providing an amorphous carbon layer over a processing
liquid contact surface of a graphite substrate and heat-depositing
a fluorine-contained resin sheet to the amorphous carbon layer.
[0006] Furthermore, according to a third embodiment of the present
invention, there is provided a cooling/heating apparatus for a
semiconductor processing liquid, wherein heat exchanging substrates
are formed by heat-depositing a fluorine-contained resin sheet to a
processing liquid contact surface of a vitrified carbon
substrate.
[0007] According to a fourth embodiment of the present invention,
there is provided a cooling/heating apparatus for a semiconductor
processing liquid, wherein the heat exchanging substrates are
formed by heat-depositing a fluorine-contained resin sheet to a
processing liquid contact surface of a silicon carbide
substrate.
[0008] According to a fifth embodiment of the present invention,
there is provided a cooling/heating apparatus for a semiconductor
processing liquid, wherein the heat exchanging substrates are
formed by providing a silicon carbide layer over a processing
liquid contact surface of a graphite substrate and heat-depositing
a fluorine-contained resin sheet to the silicon carbide layer.
[0009] In the cooling/heating apparatus for a semiconductor
processing liquid of the present invention having the above
construction, heat exchanging substrates are formed either by
directly heat-depositing a fluorine-contained resin sheet to a
processing liquid contact surface of a graphite substrate which is
highly resistant to corrosive chemicals, a vitrified carbon
substrate or a silicon carbide substrate, or by providing an
amorphous carbon layer over a processing liquid contact surface of
a graphite substrate or a silicon carbide substrate and directly
heat-depositing a fluorine-contained resin sheet to the amorphous
carbon layer so that the apparatus is free from elution of harmful
impurities caused by the attachment of the chemicals to the
adhesive layer, and moreover, elution of harmful impurities such as
a heavy-metal ion caused by corrosion of the substrate itself is
prevented as well.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] FIG. 1 is a partly sectional side view of a cooling/heating
apparatus for a semiconductor processing liquid of the present
invention;
[0011] FIG. 2 is an enlarged side sectional view of a heat
exchanging substrate;
[0012] FIG. 3 is an enlarged side sectional view of a heat
exchanging substrate showing another construction;
[0013] FIG. 4 is an enlarged side sectional view of a heat
exchanging substrate showing still another construction;
[0014] FIG. 5 is an enlarged side sectional view of a heat
exchanging substrate showing still another construction;
[0015] FIG. 6 is an enlarged side sectional view of a heat
exchanging substrate showing still another construction.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0016] FIG. 1 shows a first embodiment of a cooling/heating
apparatus for a semiconductor processing liquid according to the
present invention. The cooling/heating apparatus 1 is used for
controlling temperature of corrosive chemicals such as
semiconductor processing liquids. To be brief, as shown in FIG. 1,
the temperature of the above semiconductor processing liquid is
controlled in such a manner that the semiconductor processing
liquid taken out of a chemical container (not shown) is guided into
a cooling/heating chamber 2 through a tube 5A made of highly
corrosion-resistant fluorine-contained resin, wherein heat
exchanging substrates 3 are placed in opposed positions.
[0017] As shown in FIG. 1, the cooling/heating chamber 2 is
constructed such that the heat exchanging substrates 3 (see FIG. 2)
formed by heat-depositing a fluorine-contained resin sheet 3B to a
processing liquid contact surface of a graphite substrate 3A are
placed in opposed positions being separated by a sidewall 4 formed
of fluorine-contained resin, and opening ends on both sides thereof
are connected with tubes 5A, 5B at inlet and outlet sides of the
semiconductor processing liquid made from fluorine-contained
resin.
[0018] Further, thermo-modules 6 for cooling or heating the
semiconductor processing liquid are each tightly secured to the
outer sidewall of the respective heat exchanging substrates 3, 3 in
the cooling/heating chamber 1 with the heat exchanging substrates 3
therebetween. When cooling the semiconductor processing liquid,
heat slingers 7 for promoting heat release of the thermomodules 6
are tightly secured to the thermomodules 6 respectively by way of
introducing cooling water through a cooling pipe.
[0019] As the thermomodules 6, semiconductor thermionic elements
capable of heating and cooling by way of changing the polarity of
an applied voltage, such as Peltier element, are preferably
used.
[0020] In the cooling/heating apparatus for a semiconductor
processing liquid 1 having the above construction, the
semiconductor processing liquid is introduced into the
cooling/heating chamber 2 through the tube 5A and cooled or heated
to a predetermined temperature in the cooling/heating chamber 2. As
the heat exchanging substrates 3 are formed by heat-depositing the
fluorine-contained resin sheet 3B to a highly corrosion-resistant
graphite substrate 3A, the substrates 3 are free from elution of
harmful impurities even if a corrosive semiconductor processing
liquid infiltrates into the fluorine-contained resin sheet 3B.
Furthermore, since adhesives are not used for contact surfaces of
the graphite substrate 3A and the fluorine-contained resin sheet
3B, the heat exchanging substrates 3 can be heated, without
depending on a heat resistant temperature of the adhesive, to a
heat resistant temperature of the fluorine-contained resin sheet 3B
with which the semiconductor processing liquid contacts.
[0021] The semiconductor processing liquid maintained at a constant
temperature in the cooling/heating chamber 2 is discharged through
a tube 5B.
[0022] Thus, according to the cooling/heating apparatus for a
semiconductor processing liquid 1, the heat exchanging substrates 3
comprise only the highly corrosion-resistant graphite and the
fluorine-contained resin so that the heat exchanging substrates 3
are free from elution of harmful impurities caused by the attack of
the chemicals such as semiconductor processing liquids to the
adhesive layer and, moreover, elution of harmful impurities caused
by corrosion of the substrate 3 itself is prevented as well.
[0023] For the heat exchanging substrates 3 making up the
cooling/heating chamber 2 in the cooling/heating apparatus 1, a
structure shown in FIGS. 3 through 6 can also be adopted.
[0024] First, a heat exchanging substrate 13 shown in FIG. 3 is
formed in such a manner that an amorphous carbon layer 13C is
formed by heat treating a processing liquid contact surface of a
graphite substrate 13A, and a fluorine-contained resin sheet 13B is
heat-deposited to the amorphous carbon layer 13C.
[0025] Also, a heat exchanging substrate 23 shown in FIG. 4 is
formed by directly heat-depositing a fluorine-contained resin sheet
23B to a processing liquid contact surface of a vitrified carbon
substrate 23 A.
[0026] Furthermore, a heat exchanging substrate 33 shown in FIG. 5
is formed by directly heat-depositing a fluorine-contained resin
sheet 33B to a processing liquid contact surface of a silicon
carbide substrate 33A.
[0027] A heat exchanging substrate 43 shown in FIG. 6 is formed by
providing a silicon carbide layer 43D on a processing liquid
contact surface of a graphite substrate 43A, and directly
heat-depositing a fluorine-contained resin sheet 43B to the silicon
carbide layer 43D.
[0028] Because other configurations and operations of the heat
exchanging substrates shown in the FIGS. 2 through 6 are
substantially the same as those of the heat exchanging substrate 3
in the cooling/heating chamber 2 of the cooling/heating apparatus 1
described in FIGS. 1 and 2, the explanation for them is
omitted.
[0029] As was described above in detail, according to the
cooling/heating apparatus for a semiconductor processing liquid of
the present invention, a heat exchanging substrate is constructed
such that a fluorine-contained resin sheet is directly
heat-deposited to a processing liquid contact surface side of a
highly corrosion-resistant graphite substrate, a vitrified carbon
substrate or a silicon carbide substrate, which makes it possible
for the heat exchanging substrate to be free from elution of
harmful impurities through corrosion of an adhesive layer attacked
by chemicals, and furthermore, elution of impurities caused by
corrosion of the substrate itself is prevented.
* * * * *