U.S. patent application number 09/009391 was filed with the patent office on 2001-12-13 for process for forming electrodes.
Invention is credited to CHOI, HYUNG-CHUL, CHU, YI ZHI, HEATH, LINDA S, SMYTH, WILLIAM K.
Application Number | 20010050222 09/009391 |
Document ID | / |
Family ID | 21737366 |
Filed Date | 2001-12-13 |
United States Patent
Application |
20010050222 |
Kind Code |
A1 |
CHOI, HYUNG-CHUL ; et
al. |
December 13, 2001 |
PROCESS FOR FORMING ELECTRODES
Abstract
Substantially transparent electrodes are formed upon a substrate
by forming on the substrate, in order, a high index layer, a
metallic conductive layer, and a conductive or semi-conductive top
layer; and patterning the top layer and the conductive layer,
preferably by laser ablation, to form a plurality of discrete
electrodes from the metallic conductive layer. Conductors can be
attached directly to the top layer, without requiring removal of
this layer to expose the metallic conductive layer. The high index
layer, conductive layer and top layer can all be formed by
sputtering or similar processes which do not require high
temperatures, so that plastic substrates can be used. The
electrodes can be used, for example, in flat panel displays and in
touch screen displays.
Inventors: |
CHOI, HYUNG-CHUL;
(LEXINGTON, MA) ; CHU, YI ZHI; (WELLESLEY, MA)
; HEATH, LINDA S; (ACTON, MA) ; SMYTH, WILLIAM
K; (SUDBURY, MA) |
Correspondence
Address: |
KIRKPATRICK & LOCKHART LLP
75 STATE STREET
BOSTON
MA
02109-1808
US
|
Family ID: |
21737366 |
Appl. No.: |
09/009391 |
Filed: |
January 20, 1998 |
Current U.S.
Class: |
204/192.29 ;
204/192.15 |
Current CPC
Class: |
Y10T 428/24942 20150115;
G02F 1/13439 20130101; C09K 2323/051 20200801; Y10T 428/261
20150115; C09K 2323/00 20200801 |
Class at
Publication: |
204/192.29 ;
204/192.15 |
International
Class: |
C23C 014/34 |
Claims
1. A process for forming a plurality of substantially transparent
electrodes upon a substrate, the process comprising: forming on the
substrate, in order, a high index layer, a metallic conductive
layer, and a top high index layer having a conductivity of at least
about 400 ohms/square and patterning the top layer and the
conductive layer to form a plurality of discrete electrodes from
the metallic conductive layer.
2. A process according to claim 1 further comprising connecting a
plurality of conductors to portions of the top layer overlying the
discrete electrodes.
3. A process according to claim 1 wherein the substrate comprises a
synthetic resin.
4. A process according to claim 1 wherein the high index layer
adjacent the substrate is an electrically insulating layer.
5. A process according to claim 1 wherein the high index layer
adjacent the substrate comprises at least one of indium oxide,
titanium dioxide, cadmium oxide, gallium indium oxide, niobium
pentoxide, indium tin oxide and tin dioxide.
6. A process according to claim 1 wherein the high index layer
adjacent the substrate is formed by sputtering.
7. A process according to claim 3 wherein the high index layer
adjacent the substrate is formed at a temperature not greater than
about 170.degree. C.
8. A process according to claim 1 wherein the conductive layer
comprises at least one of gold, silver and a gold/silver alloy.
9. A process according to claim 1 wherein the conductive layer is
formed by sputtering.
10. A process according to claim 3 wherein the conductive layer is
formed at a temperature not greater than about 170.degree. C.
11. A process according to claim 1 wherein the top layer comprises
at least one of indium oxide, titanium dioxide, cadmium oxide,
gallium indium oxide, niobium pentoxide, indium tin oxide and tin
dioxide.
12. A process according to claim 1 wherein the top layer is formed
by sputtering.
13. A process according to claim 3 wherein the top layer is formed
at a temperature not greater than about 170.degree. C.
14. A process according to claim 1 wherein the patterning is
effected by laser ablation.
15. A process according to claim 14 wherein the laser ablation is
effected using infra-red radiation of a wavelength in the range of
about 700 to about 1200 nm.
16. A process according to claim 1 further comprising depositing
upon at least one surface of the substrate, prior to the deposition
of the high index layer thereon, at least one of a hard polymer
coating and a layer of silica.
17. A process according to claim 14 wherein, following the
patterning, the surface of the substrate is washed to remove debris
from the laser ablation.
18. A substantially transparent electrode assembly comprising: a
substrate; a high index layer formed on the substrate; a metallic
conductive layer formed on the high index layer; and a high index
top layer having a conductivity of at least about 400 ohms/square
formed on the conductive layer, at least the top layer and the
conductive layer being patterned so as to divide the conductive
layer into a plurality of discrete electrodes.
19. An electrode assembly according to claim 18 having a plurality
of conductors connected to portions of the top layer overlying the
discrete electrodes.
20. An electrode assembly according to claim 18 wherein the high
index layer adjacent the substrate is an electrically insulating
layer.
21. An electrode assembly according to claim 18 wherein the
substrate comprises a synthetic resin.
22. An electrode assembly according to claim 18 wherein the high
index layer adjacent the substrate comprises at least one of indium
oxide, titanium dioxide, cadmium oxide, gallium indium oxide,
indium tin oxide and tin dioxide.
23. An electrode assembly according to claim 18 wherein the
conductive layer comprises at least one of gold, silver and a
gold/silver alloy.
24. An electrode assembly according to claim 18 wherein the top
layer comprises at least one of indium oxide, titanium dioxide,
cadmium oxide, gallium indium oxide, indium tin oxide and tin
dioxide.
25. An electrode assembly according to claim 18 wherein at least
one surface of the substrate bears at least one of a hard polymer
coating and a layer of silica.
26. A liquid crystal display assembly comprising a liquid crystal
material sandwiched between two electrode assemblies, at least one
of the electrode assemblies being an assembly according to claim
18.
27. A touch screen display apparatus comprising a display screen
having superposed thereover two electrode assemblies, at least one
of the electrode assemblies being an assembly according to claim
18.
Description
BACKGROUND OF THE INVENTION
[0001] This invention relates to a process for forming electrodes,
to an electrode assembly produced by this process, and to a liquid
crystal display and touch screen display incorporating such an
electrode assembly.
[0002] Liquid crystal displays comprise a liquid crystal material
sandwiched between two substantially transparent electrode
assemblies. Touch screen displays of either the resistive or
capacitive types comprise a display screen (for example, a cathode
ray tube) having superposed thereover two substantially transparent
electrode assemblies. In both types of displays, each of these
electrode assemblies typically comprises a substrate on which is
deposited a conductive layer thin enough to be substantially
transparent. (The term "substantially transparent" is used herein
to mean that the electrodes transmit sufficient visible light so
that the two superposed electrodes will not substantially obscure,
nor substantially distort the color of, a liquid crystal display or
touch screen display incorporating the two electrodes. Typically,
commercial specifications require that the two superposed
electrodes have a transmittance of at least 80% at 550 nm.) In
liquid crystal displays the substrate is usually glass, whereas
touch screen displays usually employ a synthetic resin (plastic)
substrate for at least one electrode. The conductor is often formed
from indium tin oxide or a similar metal oxide. The conductor is
typically formed by depositing the oxide by sputtering or chemical
vapor deposition at a high temperature, and then annealing, also at
a high temperature. On glass substrates temperatures in excess of
300.degree. C. may be used to deposit and anneal the conductor; on
plastic substrates, lower temperatures must be used, with resultant
higher electrical resistance in the conductor.
[0003] Alternatively, both liquid crystal displays and touch screen
displays may make use of thin film electrodes comprising a metallic
conductive layer sandwiched between two layers having high
refractive indices; these two layers usually being formed from
metal oxides. The metallic conductive layer is patterned so as to
divide it into a plurality of electrodes, and conductors are
attached to each of these electrodes to enable formation of the
desired patterns in the liquid crystal material. Hitherto, it has
usually been necessary to eliminate the high index layer remote
from the substrate at the points where the conductors are attached
to the electrodes, since otherwise this high index layer might
present too great a resistance to current flow between the
conductors and the electrodes.
[0004] Several types of processes are known for forming these thin
film electrode assemblies. If high resistance can be tolerated, one
can simply leave the top high index layer intact, and place the
contacts thereon. Alternatively, the conductors can be provided
with conductive spacers and applied under pressure to the high
index layer so that the spacers punch through the high index layer
and contact the electrodes. However, this process tends to be
unsatisfactory because the electrical contact between the
conductors and the electrodes via the spaces is not closely
reproducible from one electrode assembly to the next, and hence the
yield of the process is adversely affected. In a further type of
process, one high index layer and the metallic conductive layer are
deposited upon the substrate, and the metallic conductive layer is
patterned to form the electrodes. A mask is then applied to cover
the areas where the conductors are to be attached to the
electrodes, and the second high index layer is deposited; the mask
prevents this high index layer being applied to the points where
the conductors are to be attached, since the presence of the
"upper" high index layer at these points would cause too high a
resistance between the electrodes and the conductors. This
procedure is time-consuming and costly because of the two separate
deposition steps. Also, the conductive layer is exposed to air
before the upper high index layer is applied, and with certain
types of conductive layer, this may pose a problem because the
conductive layer may oxidize in air.
[0005] In yet another type of process, all three layers are
deposited in a single operation, the upper high index layer and the
conductive layer are patterned to form the electrodes, and then the
portions of the upper high index layer, lying in areas where the
conductors are to be attached to the electrodes, are removed. This
type of process only requires a single deposition operation and
does avoid any risk of oxidation of conductive layer by exposure to
air. However, the selective removal of the necessary portions of
the upper high index layer is difficult.
[0006] Moreover, many prior art processes for forming electrodes
require the use of elevated temperatures of 200.degree. C. or more,
which in practice requires the use of glass substrates or expensive
high temperature plastics (polymers are known which have glass
transition temperatures above 225.degree. C. and can thus withstand
processing at such temperatures). There are many applications for
liquid crystal displays (for example, in cellular telephones and
other mobile electronic devices) where it would be advantageous to
use less expensive plastic substrates having lower glass transition
temperatures if thin film electrodes could be formed on such
substrates.
[0007] The present invention provides a process for forming
electrodes on a substrate which requires only a single deposition
operation and which does not require selective removal of the top
high index layer. Preferred forms of this process permit the use of
relatively inexpensive plastic substrates.
SUMMARY OF THE INVENTION
[0008] Accordingly, this invention provides a process for forming a
plurality of substantially transparent electrodes upon a substrate.
This process comprises forming on the substrate, in order, a high
index layer, a metallic conductive layer, and a top high index
layer having a conductivity of at least about 400 ohms/square and
patterning the top layer and the conductive layer to form a
plurality of discrete electrodes from the metallic conductive
layer.
[0009] This invention also provides a substantially transparent
electrode assembly comprising: a substrate; a high index layer
formed on the substrate; a metallic conductive layer formed on the
high index layer; and a high index top layer having a conductivity
of at least about 400 ohms/square formed on the conductive layer,
at least the top layer and the conductive layer being patterned so
as to divide the conductive layer into a plurality of discrete
electrodes.
[0010] This invention extends to a liquid crystal display assembly
comprising a liquid crystal material sandwiched between two
electrode assemblies, at least one of these electrode assemblies
being an electrode assembly of the invention, as described
above.
[0011] Finally, this invention extends to a touch screen display
apparatus comprising a display screen having superposed thereover
two electrode assemblies, at least one of the electrode assemblies
being an electrode assembly of the invention, as described
above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic side elevation of a preferred
apparatus for carrying out the process of the invention;
[0013] FIG. 2 is a section taken along the line II-II in FIG. 1;
and
[0014] FIG. 3 shows the visible and near infra-red transmission
spectrum of a preferred electrode assembly of the present invention
produced using the apparatus shown in FIGS. 1 and 2.
DETAILED DESCRIPTION OF THE INVENTION
[0015] The substrate used in the present process may be formed of
any material having sufficient mechanical integrity and a surface
smooth enough to permit the formation of electrodes thereon. The
substrate must, like the other layers of the electrode assembly be
sufficiently transparent to allow its use in a liquid crystal
display. Glass substrates may be used, but it is generally
preferred that the substrate be formed from a synthetic resin.
Preferred resins for this purpose include polycarbonate and
poly(bis(cyclopentadiene) condensate)s, such as the material sold
by Lonza AG, Munchensteinerstrasse 38, CH-4002 Basel, Switzerland
under the trademark "TRANSPHAN". This material is a film of a
polymer sold by Japan Synthetic Rubber Co. Ltd., 2-11-24 Tsukiji,
Tokyo 104, Japan under the trademark "ARTON"; this polymer is
stated by the manufacturer to be of the formula: 1
[0016] (in which X is a polar group). Other substrates which may be
useful in the present invention include polyether sulfones and
poly(alkyl)acrylates.
[0017] The substrate may be provided with coatings on one or both
surfaces to act as gas and moisture barriers, and/or to improve the
hardness and scratch resistance of the substrate and/or to improve
the adhesion of the high index layer to the substrate. For example,
it has been useful to provide on one surface or both surfaces of
the substrate a coating of a hard polymer. Such a hard coating will
typically have a thickness of from about 1 to about 15 .mu.m,
preferably from about 2 to about 4 .mu.m and may be provided by
free radical polymerization (initiated either thermally or by
ultra-violet radiation) of an appropriate polymerization material.
An especially preferred hard coating is the acrylic coating sold
under the trademark "TERRAPIN" by Tekra Corporation, 6700 West
Lincoln Avenue, New Berlin, Wis. 53151. It is also useful to
provide on one surface of the substrate a thin (typically 10-30 nm)
layer of silica (SiO.sub.x) to act as a gas and moisture barrier
for the eventual liquid crystal display assembly, and to act as an
adhesion promoter to improve the adhesion of the high index layer.
When both a hard coating and a silica layer are provided on the
substrate, they may be provided in either order. (The term "silica"
is used herein in accordance with its normal meaning in the art to
mean a material of the formula SiO.sub.x where x is not necessarily
equal to two. As those skilled in the art are aware, such silica
layers are often deposited by chemical vapor deposition or
sputtering of silicon in an oxygen atmosphere, so that the material
deposited does not precisely conform to the stoichiometric formula
SiO.sub.2 of pure silica.)
[0018] In the present process, there are deposited on the
substrate, in order, a high index layer, a metallic conductive
layer and a high index top layer. Although other techniques, for
example e-beam and thermal evaporation may be employed to deposit
these layers, the layers are preferably deposited by sputtering or
by chemical vapor deposition, with dc sputtering being especially
preferred, although RF, magnetron and reactive sputtering and
low-pressure, plasma-enhanced and laser-enhanced chemical vapor
deposition may also be used. When the preferred plastic substrates
are used, the deposition of each of the three layers should be
effected at a temperature not greater than about 170.degree. C. in
order to prevent damage to the plastic substrate; the temperature
limit of course varies with the exact substrate employed and in the
case of the aforementioned TRANSPHAN substrate, this temperature
should not be greater than 160-165.degree. C.
[0019] The high index layer adjacent the substrate may be
electrically insulating or conductive, though the latter is
generally preferred, since the use of an insulating high index
layer ensures that, should any portion of this high index layer
remain between adjacent electrodes after the patterning step, this
remaining portion will not cause an electrical short between the
electrodes; the presence of such a short is of course undesirable,
since it in effect turns the two adjacent electrodes into a single
electrode and thereby adversely affects the quality of a liquid
crystal display or touch screen in which the electrode assembly is
used. However, a conductive high index layer may be used where the
patterning conditions are such that one can be certain that no
portion of the high index layer will remain after patterning.
[0020] Whether insulating or conductive, the high index layer is
typically formed from a metal oxide, preferred oxides for this
purpose being indium oxide (In.sub.2O.sub.3), titanium dioxide
(TiO.sub.2), cadmium oxide (CdO), gallium indium oxide, niobium
pentoxide (Nb.sub.2O.sub.5), indium tin oxide and tin dioxide
(SnO.sub.2). As is well known to those skilled in the art of
forming electrodes for liquid crystal display assemblies (see, for
example, Patel et al., Methods of monitoring and control of
reactive ITO deposition process on flexible substrates with DC
sputtering, Society of Vacuum Coaters 39th Annual Technical
Conference Proceedings, 441-45 (1996), and Gibbons et al., ITO
Coatings for display applications, Society of Vacuum Coaters 40th
Annual Technical Conference Proceedings, 216-220 (1997)), the
conductivity of such metal oxide layers can be controlled over
several orders of magnitude by varying the conditions under which
the oxide layer is deposited. For the preferred dc sputtering
deposition process, the relevant conditions include temperature,
reactor pressure, partial pressure of oxygen, dc bias and
deposition rate. Doping may also be used to control the
conductivity of the insulating layer. Typically, the thickness of
the insulating layer will be in the range of from about 20 to about
80 nm.
[0021] The refractive index needed in the high index layer adjacent
the substrate (and in the top high index layer) will vary somewhat
depending upon the other layers present in the final apparatus in
which the electrode assembly of the present invention is to be
incorporated. In general, the refractive index of the high index
layers, measured at 550 nm, will exceed 1.6, and the refractive
indices of the preferred metal oxide high index layers can readily
be made to exceed 1.9, as described in the papers mentioned
above.
[0022] The conductive layer may be formed from any metal or metal
alloy capable of being deposited by the deposition process employed
and having sufficient conductivity to provide the required low
resistance in the final electrode assembly. Preferably, the
conductive layer comprises at least one of gold, silver and a
gold/silver alloy (for example, the alloy described in U.S. Pat.
No. 4,234,654). Since gold improves the corrosion resistance of the
conductive layer, it is in general desirable that this layer
comprise a layer of silver coated on one or both sides with a
thinner layer of gold. For example, a 10 nm layer of silver
sandwiched between two 1 nm layers of gold has been found to give
good results. The overall thickness of the conductive layer will
typically be in the range of about 5 to about 20 nm.
[0023] The preferred materials and processes for forming the top
layer are the same as those for forming the insulating layer,
except of course that the conditions used to deposit the top layer
should be varied so as to give the top layer substantial
conductivity. As is well known to those skilled in the art, the
resistance of layers used in electrode assemblies is normally
measured over the whole surface of the assembly, and in the present
case it has been found that using a top layer with a conductivity
of at least about 400 ohms/square, and desirably from about 100 to
about 200 ohms per square, gives satisfactory results. The
thickness of the top layer is desirably in the range of about 20 to
about 100 nm.
[0024] Examples of combinations of insulating layers, conductive
layers and top layers which have been found to give good results in
the present process are given in Table 1 below (in which "ITO"
stands for indium tin oxide).
1TABLE 1 Insulating layer Conductive Layer Top Layer ITO, 40 nm Ag,
10 nm ITO, 47 nm ITO, 40-42 nm Ag, 9-10 nm/Au, 1-1.5 nm ITO, 47 nm
ITO, 40-42 nm Au, 1 nm/Ag, 10 nm/ ITO, 47 nm Au 1 nm SnO.sub.2, 42
nm Ag, 10-12 nm ITO, 47 nm SnO.sub.2, 42 nm Ag, 9-10 nm/Au, 1-1.5
nm ITO, 47 nm SnO.sub.2, 42 nm Au, 1 nm/Ag, 10 nm/ ITO, 47 nm Au 1
nm
[0025] Following the deposition of the insulating, conductive and
top layers, the top layer and the conductive layer are patterned to
form a plurality of discrete electrodes from the conductive layer.
It is important that the patterning extend completely through both
the top layer and the conductive layer to ensure that there are no
short circuits between adjacent electrodes formed from the
conductive layer. In practice, the patterning will usually extend
completely through the high index layer adjacent the substrate;
however, as already indicated, it is desirably essential that the
high index layer have sufficient resistance to prevent unwanted
current leakage between adjacent electrodes should any portion of
the high index layer remain after patterning.
[0026] The preferred technique for patterning is laser ablation,
desirably using an infra-red laser emitting in the range of about
700 to about 1200 nm; the infra-red radiation is absorbed primarily
within the conductive layer leading to rapid and reliable
patterning of this layer. Desirably, the laser used for the laser
ablation is a fiber laser employing a double-clad optic fiber, as
described for example in U.S. Pat. Nos. 4,815,079; 5,268,978;
5,373,576 and 5,418,880. Typically, the energy required for
patterning the electrode assembly is about 800 mJ cm.sup.-2, so
that using a fiber laser with a 6 W output and an 8.5 .mu.m spot
radius (measured on a 1/e.sup.2 basis) permits scanning the spot
over the substrate at about 70 m sec.sup.-1, and patterns
approximately 400 cm.sup.2 per minute of the substrate. As
described in more detail below with reference to the drawings,
typically the laser beam is scanned in a raster pattern over the
substrate while being modulated under the control of digital
signals from a raster image processor. This technique has the
advantage that it requires only the preparation of a digital image
of the proposed electrode pattern, so that the apparatus can change
patterns with essentially no down time.
[0027] After laser ablation, the electrode assembly is contaminated
with redeposited debris from the ablation and surface residue. It
has been found that the surface of the assembly can be effectively
cleaned by washing it with water, desirably containing a surface
active agent; gentle scrubbing of the surface assists in the
cleaning process without harming the final electrode assembly.
[0028] After this cleaning process, a plurality of conductors are
attached to portions of the top layer overlying the discrete
electrodes formed during the patterning step, so that these
conductors make electrical contact with the electrodes via the
conductive top layer. The electrode assembly thus formed may be for
use in a passive type liquid crystal display, a touch screen
display or other flat panel display.
[0029] It has been found that the electrode assemblies of the
present invention can readily be formed having greater than 80%
transparency at 550 nm, and less than 10 ohms per square sheet
resistance. Such electrode assemblies are readily incorporated into
liquid crystal display assemblies of commercial quality.
[0030] A preferred process of the invention will now be described
in more detail, though by way of illustration only, with reference
to the accompanying drawings, in which FIGS. 1 and 2 show
schematically a preferred apparatus for carrying out the patterning
step of the process.
[0031] The apparatus (generally designated 10) shown in FIGS. 1 and
2 of the accompanying drawings is an internal drum laser ablation
device; alternatively an external drum or flat bed device may be
used. The apparatus 10 comprises a base 11 carrying at its opposed
ends two upstanding end plates 12 and 14. A cylindrical drum 16 is
fixedly mounted between the end plates 12 and 14. (Part of the drum
16 is broken away in FIG. 1 to show the remaining parts of the
apparatus 10.) A rod 18 is fixed between the end plates 12 and 14
and a fiber laser unit 20 is slideably mounted on this rod. The
laser unit 20 is also engaged with a lead screw 22 which extends
below and parallel to the rod 18. The laser unit 20 comprises a
laser and a rotating mirror (neither component is shown separately
in FIG. 1), which causes the laser beam 24 to emerge from the laser
unit at an acute angle (typically about 65.degree.) to the axis of
the rod 18 and to rotate rapidly around this axis, thereby
directing this beam around the internal surface of the drum 16.
During the patterning process, the lead screw 22 is rotated
synchronously with the mirror of the laser unit 20 so that, as the
beam 24 rotates, the laser unit 20 moves horizontally along the
axis of the drum 16, so that the beam 24 describes a helical path
along the internal surface of the drum 16. A sheet 26 of coated
substrate is held by a vacuum device (not shown) against the
internal surface of the drum 16 so that the beam 24 passes in a
raster pattern over the sheet 26. The operation of the laser unit
20 is controlled by a computerized control unit (not shown) so as
to produce the desired pattern on the sheet 26.
[0032] In a preferred process of the invention, a sheet of the
aforementioned TRANSPHAN, sold by Lonza AG) 5.5 mil (140 .mu.m)
thick was coated on both surfaces with a 2 to 4 .mu.m thick layer
of acrylic polymer ("TERRAPIN" sold by Tekra Corporation, 6700 West
Lincoln Avenue, New Berlin, Wis. 53151) to act as a hard coat to
improve the scratch resistance of the final electrode assembly
barrier. The front surface of the sheet (i.e., the surface on which
the metal oxide and metal layers were to be deposited) was then
coated by DC sputtering or chemical vapor deposition with a 30 nm
layer of silica, which serves as a gas and moisture barrier in the
final liquid crystal display assembly in which the electrode
assembly would ultimately be incorporated, and also as an adhesion
promoter to enhance the adhesion of the high index layer to the
substrate. (The location of the silica layer can be varied,
depending partly upon the type of substrate employed. For example,
if the silica layer does not need to function as an adhesion
promoter, but only a gas and moisture barrier, the layer may be
provided on the rear surface of the substrate (i.e., the surface
opposite to that on which the metal oxide and metal layers were to
be deposited) or between one of the hard coats and the substrate.
Locating the silica layer immediately below the high index layer
does have the disadvantage that some or all of the silica layer may
be removed during the patterning step, which might affect the gas
and moisture barrier function of the layer.)
[0033] A 42 nm layer of tin dioxide was then deposited on the front
surface of the sheet by direct current sputtering using an
industrial metallizer apparatus. Thereafter, a 1 nm layer of gold,
a 10 nm layer of silver and a further 1 nm of gold were deposited
on top of the insulating layer by direct current sputtering using
the same apparatus to form the metallic conductive layer of the
electrode assembly. Finally, a 47 nm layer of indium tin oxide was
deposited on top of the metallic conductive layer by direct current
sputtering using the same apparatus to form the top layer of the
electrode assembly.
[0034] The coated sheet thus produced was patterned using the
apparatus shown in FIGS. 1 and 2. The laser unit was a 9 W fiber
laser unit (Model FL9000-T, available from Polaroid Corporation,
Cambridge, Mass.) operating in the TEM.sub.00 spatial mode at a
wavelength of 1.1 .mu.m and a spot radius of 8.5 .mu.m (measured on
a 1/e.sup.2 basis), the beam of the apparatus being rotated so that
the spot traversed the coated sheet at a linear velocity of 70 m
sec.sup.-1. FIG. 3 shows the visible and infra-red absorption
spectrum of the coated substrate immediately prior to patterning.
It is important that the high index, top high index and especially
the conductive layers be chosen to provide high transparency in the
visible region (so that the resultant electrode assembly is
sufficiently transparent) while still providing enough absorption
at the infra-red wavelength used for patterning; the metal layer
described above gives good infra-red absorption without undue
visible absorption.
[0035] Following this patterning step, the patterned sheet was
washed with water containing a detergent, with gentle manual
scrubbing, to remove debris from the patterning step, and to
produce a final sheet ready for incorporation into a liquid crystal
display assembly.
* * * * *