U.S. patent application number 09/776004 was filed with the patent office on 2001-11-22 for showerhead apparatus for radical-assisted deposition.
This patent application is currently assigned to APEX Co. Ltd.. Invention is credited to Kim, Jae Ho, Kim, Sang Ho, Park, Sang Joon, Rha, Kwan Goo, Shin, In Chel.
Application Number | 20010042799 09/776004 |
Document ID | / |
Family ID | 19647045 |
Filed Date | 2001-11-22 |
United States Patent
Application |
20010042799 |
Kind Code |
A1 |
Kim, Jae Ho ; et
al. |
November 22, 2001 |
Showerhead apparatus for radical-assisted deposition
Abstract
There is disclosed a showerhead apparatus for radical-assisted
deposition including a showerhead of a two-stair structure
separated by a given distance, which has a first buffer for
uniformly distributing a raw material gas and a second buffer for
uniformly distributing a plasma gas, wherein a plasma is generated
within the showerheads and the raw material gas sprayed into the
plasma is constantly maintained, thus forming a uniform thin film
on a wafer or a substrate. The showerhead apparatus for
radical-assisted deposition comprises a raw material gas spray
means including a first buffer which is divided into upper and
lower layers for uniformly distributing a gas introduced from a raw
material gas injection tube, wherein a plurality of raw material
gas spray holes for spraying the raw material gas distributed
within the first buffer at a given flow rate is formed at a lower
plate of the spray means; a plasma generating gas spray means
including a second buffer for uniformly distributing a plasma
generating gas between with the raw material gas spray means,
wherein a plurality of plasma generating gas spray holes and
through holes for spraying the plasma generating gas distributed
within the second buffer are formed at a lower plate of the spray
means, respectively; a guide means for communicating the raw
material gas spray holes in the raw material gas spray means and
the through holes in the plasma generating gas spray means and for
inducing the raw material gas and the plasma generating gas so that
they are not mixed; and a RF generating means mounted at one
outside side of the raw material gas spray means, wherein a RF rod
for applying an outside RF power is included at a lower plate of
the RF generating means.
Inventors: |
Kim, Jae Ho; (Cheongju,
KR) ; Shin, In Chel; (Seoul, KR) ; Park, Sang
Joon; (Daejeon, KR) ; Rha, Kwan Goo;
(Cheongju, KR) ; Kim, Sang Ho; (Daejeon,
KR) |
Correspondence
Address: |
AKIN, GUMP, STRAUSS, HAUER & FELD, L.L.P.
ONE COMMERCE SQUARE
2005 MARKET STREET, SUITE 2200
PHILADELPHIA
PA
19103
US
|
Assignee: |
APEX Co. Ltd.
|
Family ID: |
19647045 |
Appl. No.: |
09/776004 |
Filed: |
February 2, 2001 |
Current U.S.
Class: |
239/553 ;
239/128; 239/397.5; 239/548 |
Current CPC
Class: |
H01L 21/67069 20130101;
C23C 16/45565 20130101; H01J 37/32082 20130101; C23C 16/452
20130101; C23C 16/45574 20130101 |
Class at
Publication: |
239/553 ;
239/128; 239/397.5; 239/548 |
International
Class: |
B05B 001/14 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 16, 2000 |
KR |
2000-7366 |
Claims
What is claimed:
1. A showerhead apparatus for radical-assisted deposition,
comprising: a raw material gas spray means including a first buffer
which is divided into upper and lower layers for uniformly
distributing a gas introduced from a raw material gas injection
tube, wherein a plurality of raw material gas spray holes for
spraying said raw material gas distributed within said first buffer
at a given flow rate is formed at a lower plate of said spray
means; a plasma generating gas spray means including a second
buffer for uniformly distributing a plasma generating gas between
with said raw material gas spray means, wherein a plurality of
plasma generating gas spray holes and through holes for spraying
said plasma generating gas distributed within said second buffer
are formed at a lower plate of said spray means, respectively; a
guide means for communicating said raw material gas spray holes in
said raw material gas spray means and said through holes in said
plasma generating gas spray means and for inducing said raw
material gas and said plasma generating gas so that they are not
mixed; and a RF generating means mounted at one outside side of
said raw material gas spray means, wherein a RF rod for applying an
outside RF power is included at a lower plate of said RF generating
means.
2. The showerhead apparatus for radical-assisted deposition
according to claim 1, wherein said raw material gas spray means
further includes a middle plate for dividing said first buffer into
upper and lower spaces and for uniformly distributing said raw
material gas distributed into said upper space into said lower
space.
3. The showerhead apparatus for radical-assisted deposition
according to claim 2, further including a support pin erectly
formed at the circumferential face of said lower plate in said raw
material gas spray means, for supporting said middle plate in order
to form a lower space between with said middle plate.
4. The showerhead apparatus for radical-assisted deposition
according to claim 1, wherein the lower plate of said raw material
gas spray means is made of an electrode plate.
5. The showerhead apparatus for radical-assisted deposition
according to claim 1, further including: a first insulating member
formed at a circumferential face of said RF rod generating means; a
second insulating member formed to cover the upper portion of said
first buffer in sad raw material gas spray means; and a third
insulating member formed at a circumferential face of said second
buffer in said plasma generating gas spray means, for maintaining
the upper and below width of said second buffer, wherein said first
through third insulating member electrically insulate said RF power
applied to the lower plate in the raw material gas spray means.
6. The showerhead apparatus for radical-assisted deposition
according to claim 5, further including: a upper plate formed to
surround the outer side of said second insulating member; and a
lower plate, the side of which is fixed at a chamber, for
supporting said upper plate and said third insulating member.
7. The showerhead apparatus for radical-assisted deposition
according to claim 6, further including a heating means built in
said upper plate, for maintaining the raw material gas distributed
in said first buffer of said raw material gas spray means at a
constant temperature.
8. The showerhead apparatus for radical-assisted deposition
according to any one of claims 1 through 7, further including: a
raw material gas injection tube for supplying a raw material gas
into said first buffer of said raw material gas spray means through
said upper plate and said second insulting member; a mass flow
controller formed at a given position of said raw material gas
injection tube, for controlling the gas introduced into said first
buffer; and a plasma gas guide tube for supplying a plasma gas into
said second buffer of said plasma generating gas supply means
through one circumferential face of said raw material gas spray
means.
9. The showerhead apparatus for radical-assisted deposition
according to any one of claims 1 through 7, further including: a
plasma gas buffer formed at one circumferential face of the lower
plate in said raw material gas spray means and communicating with
said plasma gas injection tube, wherein plasma gas distribution
holes are formed at the bottom of said plasma gas buffer; and a gas
passage formed between the lower plate of said raw material gas
spray means and said third insulating member, for introducing a
plasma gas into said second buffer through said plasma gas
distribution holes.
Description
TECHNICAL FIELD
[0001] The invention relates generally to a showerhead apparatus
for radical-assisted deposition in chemical vapor deposition
equipment for performing a semiconductor manufacturing process.
More particularly, the present invention relates to a showerhead
apparatus for radical-assisted deposition in which a showerhead is
consisted of a two-stair structure to generate plasma, so that
uniformity of a thin film can be improved, the deposition
efficiency can be increased and generation of particles is
minimized when a thin film is deposited on a large-caliber wafer or
a substrate.
BACKGROUND OF THE INVENTION
[0002] Generally, in a process of manufacturing a semiconductor,
the chemical vapor deposition apparatus for depositing a thin film
on a wafer or a substrate employs a plasma in order to deposit a
thin film of a high quality at low temperature, whereby a raw
material is activated to deposit a thin film on the wafer or the
substrate. A conventional apparatus for generating plasmas will be
now explained in short by reference to FIG. 1a.
[0003] FIG. 1a is a schematic view illustrating an entire structure
of a conventional plasma chemical vapor deposition apparatus. The
apparatus includes chamber 107 below which an exhaust outlet 106 is
formed, a gas injection tube 102 formed through the upper center of
the chamber 107 for injecting a plasma generating gas, a showerhead
110 having a plurality of holes, for spraying the plasma generating
gas induced from the gas injection tube 102, which is surrounded by
a shield 104 and is also mounted under the gas injection tube 102,
a shower ring 103 mounted below the showerhead 110 for spraying a
raw material gas supplied from a raw material gas injection tube
101 when a plasma is used, a substrate 108 on which a thin film is
deposited the gas sprayed from the shower ring 103 and a heater 109
supporting the substrate 108 for providing a given thermal source
to the substrate.
[0004] At this time, an insulating plate 105 having an electrode
plate for generating a plasma by an outside RF power supply (not
shown) is formed on the chamber 107 at the portion of which the gas
injection tube 102 passes through. Also, the shower ring 103 is
separated from the plasma generating apparatus.
[0005] In the above conventional structure, it is impossible to
accurately adjust the raw material gas since the shower ring 103 is
directly exposed to the plasma generating gas passing through the
showerhead 110 due to the temperature elevated by the plasma. This
results in degrading the quality of a thin film to be grown. Also,
in case of employing a large-caliber wafer, as it is difficult to
uniformly spray a raw material gas on the entire surface of the
wafer, forming a uniform thin film is made impossible. Further, as
the distance between the shower ring and the wafer or the shower
ring and the substrate is distant, there is a problem that the
deposition efficiency of the raw material gas is degraded.
[0006] In order to overcome the above problems, Korean Patent
Application No.99-0243446 proposes a showerhead apparatus including
a plasma generating section, which includes a showerhead of a
two-stair structure the upper and lower portion of which has a
buffer, respectively, whereby the raw material gas sprayed into the
plasma can be constantly distributed to form a uniform thin film on
a wafer or a substrate.
[0007] FIG. 1b is a schematic view of the showerhead apparatus
including the above plasma generating section. The showerhead
apparatus includes first and second showerheads 201 and 202 having
a two-stair structure, the upper and lower portion of which has
buffers 201a and 202a, respectively. Here, the showerhead is
constructed wherein a plasma is generated by the first upper buffer
201 a of the first showerhead 201, the plasma is sprayed on a wafer
203 through a plasma spray hole 201b passing through the second
buffer 202a, a raw material gas is injected into the second buffer
202a of the second showerhead 202 and the raw material gas is
sprayed through a plurality of raw material gas spray holes 202b
formed at the below plate of the second buffer 202a. In the above
conventional showerhead apparatus, however, the generated plasma is
introduced into the chamber through the plasma spray holes passing
through the second buffer, so that the probability or the number in
which particles constituting plasmas such as positive ions,
electrons, radical etc. collide each other within the spray hole or
collide against the internal wall of the spray hole is increased.
Thus, there is a drawback that the plasma efficiency is decreased
due to loss of the energy. In addition, as the raw material gas
introduced into the second buffer is caused to spiral heavily
within the second buffer by the plurality of plasma spray holes
formed at the second buffer, there are problems that the internal
of the showerhead is contaminated and a lot of particles are
generated.
SUMMARY OF THE INVENTION
[0008] The present invention is contrived to solve the above
problems and an object of the present invention is to provide a
showerhead apparatus for radical-assisted deposition including a
showerhead of a two-stair structure separated by a given distance,
which has a first buffer for uniformly distributing a raw material
gas and a second buffer for uniformly distributing a plasma gas,
wherein a plasma is generated within the showerheads and the raw
material gas sprayed into the plasma is constantly maintained, thus
forming a uniform thin film on a wafer or a substrate.
[0009] Also, another object of the present invention is to provide
a showerhead apparatus for radical-assisted deposition capable of
forming a thin film of a high quality at a low-temperature process
while simplifying the structure of two-stair showerheads having a
first buffer and a second buffer.
[0010] In order to accomplish the above object, the present
invention provides a showerhead apparatus for radical-assisted
deposition comprising a raw material gas spray means including a
first buffer which is divided into upper and lower layers for
uniformly distributing a gas introduced from a raw material gas
injection tube, wherein a plurality of raw material gas spray holes
for spraying the raw material gas distributed within the first
buffer at a given flow rate is formed at a lower plate of the spray
means; a plasma generating gas spray means including a second
buffer for uniformly distributing a plasma generating gas between
with the raw material gas spray means, wherein a plurality of
plasma generating gas spray holes and through holes for spraying
the plasma generating gas distributed within the second buffer are
formed at a lower plate of the spray means, respectively; a guide
means for communicating the raw material gas spray holes in the raw
material gas spray means and the through holes in the plasma
generating gas spray means and for inducing the raw material gas
and the plasma generating gas so that they are not mixed; and a RF
generating means mounted at one outside side of the raw material
gas spray means, wherein a RF rod for applying an outside RF power
is included at a lower plate of the RF generating means.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The aforementioned aspects and other features of the present
invention will be explained in the following description, taken in
conjunction with the accompanying drawings, wherein:
[0012] FIG. 1a is a schematic view illustrating a conventional
plasma chemical vapor deposition apparatus;
[0013] FIG. 1b is a front view for illustrating a showerhead having
a conventional plasma generator;
[0014] FIG. 2 is a front view of a showerhead apparatus for
radical-assisted deposition according to one embodiment of the
present invention; and
[0015] FIG. 3 is a plan view of a bottom plate of a second
showerhead being an integral part of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0016] A preferred embodiment of the present invention will be
described in detail with reference to accompanying FIGS. 2 and
3.
[0017] A showerhead apparatus for radical-assisted deposition
according to the present invention sprays separately a raw material
gas and a plasma generating gas, wherein the plasma is used to
activate the raw material gas, thus improving uniformity and the
quality of a thin film. As shown in FIG. 2, the showerhead
apparatus includes an upper plate 11 formed at an internal upper
side of the chamber 10 for performing a process and having a first
heater 12 for uniformly maintaining the temperature of a raw
material gas therein, a lower plate 13 the side of which is fixed
at the chamber 10, for supporting the upper plate 11, a raw
material injection tube 14 formed at the central portion of the
upper plate 11, for supplying the raw material gas through it and a
mass flow controller 27 formed at a given position of the raw
material gas injection tube 14, for controlled the inflow of the
gas.
[0018] Also, a first buffer 15a for uniformly distributing the gas
introduced from the raw material gas injection tube 14 is formed
within the upper plate 11. Further, a first showerhead 15, wherein
a plurality of raw material gas spray holes 15c through which the
raw material gas distributed within the first buffer 15a is sprayed
at a given flow rate are formed, is formed at a lower plate
15b.
[0019] Here, the lower plate 15b of the first showerhead 15 is
formed of an electrode plate, from which plasma is generated by RF
applied from a RF power supply to be explained later. The first
showerhead 15 has the first buffer 15a that is divided into upper
and lower spaces. Further the first showerhead 15 includes a middle
plate 16 having a plurality of exhaust holes 16a for uniformly
distributing the raw material gas distributed into the upper space
of the showerhead into the lower space of the showerhead, and a
support pin 17 erectly formed at the circumferential face of the
lower plate 15b in the first shower head 15 for supporting the
middle plate 16 in order to form a lower space between the middle
plate 16 and itself.
[0020] At the lower portion of the first showerhead 15 is formed a
second buffer 18a for uniformly distributing the flow of the plasma
generating gas between itself and the first showerhead 15. Also,
there is formed a second showerhead 18 for spraying the plasma
generating gas distributed within the second buffer 18a, wherein a
plurality of plasma generating gas spray holes 18c are formed at
the lower plate 18b of the second showerhead 18. Then, as shown in
FIG. 3, a through hole 18d facing the hole 15c formed at the lower
plate 15b of the first showerhead 15 is formed around the spray
holes 18c formed at the lower plate 18b of the second showerhead
18.
[0021] In addition, a RF power 19 having a RF rod 19a and a RF
connector 19b which apply an outside RF power supply to the lower
plate 15b of the first showerhead 15 is formed to be uprightly
through the upper plate 11 at one side of the first showerhead
15.
[0022] Meanwhile, in order for the raw material gas and the plasma
generating gas not to be mixed together, a guide tube 20 made of an
insulator, one side of which is mounted at the raw material gas
spray hole 15c in the first showerhead 15 and the other side of
which passes through the through hole 18d in the second showerhead
18, is formed.
[0023] A first insulating member 21 is formed at a circumferential
face of the RF rod 19a in the RF power 19, and a second insulating
member 22 for covering the first buffer 15a is formed between the
upper portion of the first buffer 15a and the upper plate 11 in the
first showerhead 15. Also, a third insulating member 23 is formed
at a circumferential face of the second buffer 18a in the second
showerhead 18 in order to keep the upper and lower width of the
second buffer 18a. At this time, the second and third insulating
members 22 and 23 are supported by the lower plate 13 and the first
to third insulating members 21, 22 and 23 function to electrically
insulate the RF power supply applied to the lower plate 15b in the
first showerhead 15.
[0024] Further, a plasma gas inlet tube 24 for supplying a plasma
gas into the second buffer 18a of the second showerhead 18 is
formed at one circumferential side of the lower plate 15b in the
first showerhead 15. Also, a plasma gas buffer 25 is formed at a
lower portion of which a plasma gas distribution hole 25a is formed
at one circumferential side of the lower plate 15b in the first
showerhead 15 so that the plasma gas buffer 25 can communicate with
the plasma gas inlet tube 24. A gas passage 26 for introducing the
plasma gas into the second buffer 18a along with the plasma gas
distribution hole 25a is formed between the lower plate 15b and the
third insulating member 23, is formed.
[0025] An unexplained reference numeral 31 indicates an exhaust
port for exhausting the gas within the chamber 10 toward the
outside, 32 indicates a wafer or a substrate on which a raw
material gas activated by the plasma generating gas sprayed from
the second showerhead 18 is deposited to form a thin film and 33
indicates a second heater supporting the substrate 32, for
providing a given thermal source to the substrate 32.
[0026] An embodiment of the present invention constructed above
will be in detail explained below.
[0027] First, if the gas supplied from the plasma generating gas
inlet tube 24 is introduced into the second buffer 18a in the
second showerhead 18 via the plasma gas distribution hole 25a in
the gas buffer 25 and the gas passage 26, the electric power from
the RF power 19 is applied to the lower plate 15b in the first
showerhead 15 via the RF rod 19a, thus generating a plasma. The
plasma thus generated is sprayed into the substrate 32 via the
plasma generating gas spray holes 18c from at the lower plate 18b
in the second showerhead 18 while is maintained at a constant fluid
pressure within the second buffer 18a. Also, the raw material gas
from the raw material gas injection tube 14 is introduced into the
upper space formed at the first buffer 15a of the first showerhead
15. Then, this gas is again introduced into the lower space in the
first buffer 15a via the holes 16a in the middle plate 16, so that
the fluid pressure of the raw material gas is uniformly
distributed. At this time, the heater built in the upper plate 11
constantly maintains the temperature of the raw material gas
distributed within the first buffer 15a of the first showerhead
15.
[0028] Then, the raw material gas distributed within the first
buffer 15a in the first showerhead 15 is sprayed onto the substrate
32 via the spray holes 15c formed at the lower plate 15b of the
first showerhead 15 and the guide tube 20 communicating with the
through hole 18d formed at the lower plate 18b.
[0029] As mentioned above, the raw material gas passed through the
guide tube 20 after being distributed into the first buffer 15 and
the neutral radical of the plasma generating gas passed through the
spray holes 18c in the second showerhead 18 are sprayed onto the
substrate with the two being separated to each other. During this
process, reaction of the raw material gas with the neutral radical
is prevented. Thus, vapor reaction that becomes a major reason in
generation of particles can be prohibited, and a thin film having a
uniform and good quality can be formed on the wafer or the
substrate 32.
[0030] The present invention has been described with reference to a
particular embodiment in connection with a particular application.
Those having ordinary skill in the art and access to the teachings
of the present invention will recognize additional modifications
and applications within the scope thereof.
[0031] It is therefore intended by the appended claims to cover any
and all such applications, modifications, and embodiments within
the scope of the present invention.
[0032] As mentioned above, the present invention provides a
two-stair showerhead structure in which the plasma generating
section and the raw material gas spray section are incorporated.
Thus, the present invention can prevent collision and injection of
ions and electros, which caused a problem in a deposition process
using conventional plasma generation. Also, introduction of
impurities such as carbon (C), hydrogen (H), chlorine (Cl), brome
(Br), etc. and a large quantity of particles, which existed when a
metal organic source or a metal inorganic source is used a raw
material gas, can be prevented. In addition, as the passage through
which the radical generated from the showerhead apparatus is
introduced into the chamber can be maintained at its minimum, the
efficiency of radical can be maximized. Also, according to the
present invention, as a thin film of a high quality can be formed
at a low-temperature process, reliability of the process can be
improved and the throughput of the product can be increased.
* * * * *