U.S. patent application number 09/810088 was filed with the patent office on 2001-11-15 for passive solid-state magnetic field sensors and applications therefor.
This patent application is currently assigned to Spinix Corporation. Invention is credited to Dionne, Gerald F., Li, Yi-Qun, O'Handley, Robert C., Zhang, Chun.
Application Number | 20010040450 09/810088 |
Document ID | / |
Family ID | 26789269 |
Filed Date | 2001-11-15 |
United States Patent
Application |
20010040450 |
Kind Code |
A1 |
Li, Yi-Qun ; et al. |
November 15, 2001 |
Passive solid-state magnetic field sensors and applications
therefor
Abstract
Passive solid-state magnetic sensors are based on the
combination of magnetorestrictive materials and piezoelectric
materials. Sensors have applications in rotor speed detection,
magnetic field detection, read heads, and MRAM, for example.
Inventors: |
Li, Yi-Qun; (Tewksbury,
MA) ; O'Handley, Robert C.; (Andover, MA) ;
Dionne, Gerald F.; (Winchester, MA) ; Zhang,
Chun; (Warren, NJ) |
Correspondence
Address: |
Leo R. Reynolds
HAMILTON, BROOK, SMITH & REYNOLDS, P.C.
Two Militia Drive
Lexington
MA
02421-4799
US
|
Assignee: |
Spinix Corporation
Moraga
CA
|
Family ID: |
26789269 |
Appl. No.: |
09/810088 |
Filed: |
March 16, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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09810088 |
Mar 16, 2001 |
|
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09441763 |
Nov 17, 1999 |
|
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Current U.S.
Class: |
324/260 |
Current CPC
Class: |
G01R 33/02 20130101;
G01R 33/18 20130101 |
Class at
Publication: |
324/260 |
International
Class: |
G01R 033/00 |
Claims
What is claimed is:
1. A system for detecting rotational speed of a rotor, the system
comprising: a sensor comprising at least one multilayer material
located adjacent to, but separate from, a rotatable rotor, the
multilayer material comprising a layer of a first selected
thickness of a selected magnetostrictive material, connected across
an interface to a layer of a second selected thickness of a
selected piezoelectric material and configured so that, when the
magnetostrictive material is subjected to a change in magnetic
field from rotation of the rotor, a change in at least one
dimension of the magnetostrictive material induces a strain in, and
produces a non-zero voltage signal in, the piezoelectric material,
where the rotor comprises one or more selected magnetic materials
located at N locations (N.gtoreq.1) on a circumference of the
rotor, and the N locations are approximately equally spaced along
the circumference; and voltage sensing means connected to the
piezoelectric material layer to sense and count a number of times
the voltage signal attains or exceeds a selected value in a
selected time interval as the rotor wheel rotates.
2. A system as described in claim 1, wherein the multilayer
material comprises a second layer of magnetostrictive material
positioned so that the piezoelectric layer lies between and is
connected to each of the first magnetostrictive layer and the
second magnetostrictive layer.
3. A system as described in claim 1, wherein the multilayer
material comprises a second layer of the piezoelectric material
positioned so the layer of magnetostrictive material lies between
and is connected to each of the first piezoelectric layer and the
second piezoelectric layer, and at least one of the first
piezoelectric layer and the second piezoelectric layer is connected
to the voltage sensing means.
4. A system as described in claim 1, wherein the magnetic material
is drawn from a group consisting of a ferromagnetic material and a
permanent magnetic material.
5. A system as described in claim 1, wherein the magnetostrictive
material is a ferrite.
6. A system as described in claim 1, wherein the piezoelectric
material is drawn from a group consisting of lead zirconate
titanate, polyvinylidene fluoride, aluminum nitride, and
quartz.
7. A system as described in claim 1, wherein the piezoelectric
material layer is patterned as a strip on the magnetostrictive
material layer.
8. A system as described in claim 1, further comprising multiple
strips of piezoelectric material connected in series.
9. A system as described in claim 1, wherein the rotor comprises N
magnets (N.gtoreq.1) mounted on a circumference of the rotor with
approximately equal spacing.
10. A method for detecting rate of rotation of a wheel, the method
comprising: providing a sensor with at least one multilayer
material located adjacent to a circumference of a rotor wheel for a
rotor, the multilayer material comprising a layer of a first
selected thickness of a selected magnetostrictive material located
contiguous to a layer of a second selected thickness of a selected
piezoelectric material and configured so that, when the
magnetostrictive material is subjected to a change in magnetic
field, a change in at least one dimension of the magnetostrictive
material induces a strain in, and produces a non-zero voltage
signal in, the piezoelectric material, where the rotor comprises
one or more selected magnetic materials located at N locations
(N.gtoreq.1) on a circumference of the rotor, and the N locations
are approximately equally spaced along the circumference; and
providing a voltage sensing means, connected to the piezoelectric
material layer, to sense and count a number of times the voltage
signal attains or exceeds a selected value in a selected time
interval as the rotor wheel rotates.
11. A system for detecting electrical current, the system
comprising: an electrical conductor that can support an electrical
current; at least one multilayer material, positioned adjacent to
the conductor, the multilayer material comprising a layer of
selected thickness of a selected magnetostrictive material located
contiguous to a layer of selected thickness of a selected
piezoelectric material and configured so that, when the
magnetostrictive material is subjected to a change in magnetic
field, a change in at least one dimension of the magnetostrictive
material induces a strain in, and produces a non-zero voltage
signal in, the piezoelectric material; a source of a bias magnetic
field having a selected magnetic field strength in a region
surrounding the multilayer material; a voltage sensing means,
connected to the piezoelectric material layer, to determine a
selected function value for the voltage in a selected time interval
as electric charge flows in the conductor and to convert the
voltage function value to a current value that is a measure of
electrical current during the selected time interval.
12. The system of claim 11, wherein the voltage function value is
chosen to be a root mean square value for said voltage, determined
for said time interval.
13. A method for detecting electrical current, the method
comprising: providing an electrical conductor that can support an
electric current; positioning at least one multilayer material
adjacent to the conductor, the multilayer material comprising a
layer of selected thickness of a selected magnetostrictive material
located contiguous to a layer of selected thickness of a selected
piezoelectric material and configured so that, when the
magnetostrictive material is subjected to a change in magnetic
field, a change in at least one dimension of the magnetostrictive
material induces a strain in, and produces a non-zero voltage
signal in, the piezoelectric material; providing a bias magnetic
field having a selected magnetic field strength in a region
surrounding the multilayer material; providing a voltage sensing
means, connected to the piezoelectric material layer, to determine
a selected function value for the voltage in a selected time
interval as electrical charge flows in the conductor; and
converting the voltage function value to a current value that is a
measure of electrical current in the conductor during the selected
time interval.
14. The method of claim 13, further comprising choosing as the
voltage function value a root mean square value for the voltage,
determined for the selected time interval.
Description
RELATED APPLICATIONS
[0001] This application is a Division of U.S. application Ser. No.
09/441,763, filed Nov. 17, 1999, which is a Continuation of U.S.
application Ser. No. 09/358,177, filed Jul. 20, 1999, and which
claims the benefit of U.S. Provisional Application No. 60/094,837,
filed Jul. 31, 1998. The contents of the above applications are
incorporated herein by reference in their entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Technical field
[0003] This invention is in the field of magnetic sensors which
detect a magnetic field or magnetic field change and find use in
linear or rotary motion detection, electrical current sensing,
linear or rotary position sensing, magnetic imaging, magnetic
recording read heads, magnetic recording media as well as general
magnetic field sensing.
[0004] 2. Background of the Invention
[0005] Because of the many applications of magnetic field sensors,
there is a long history of technical development of materials and
means to measure fields of various strengths. No one sensor can
perform every function well. Factors such as size, weight, power
consumption, and cost should be minimized by a field sensor.
Sensitivity, linearity, bias, stability, reliability, and operating
temperature and frequency range are factors that should be
optimized. As with any instrument, it is usually difficult to
achieve all of these characteristics in one device. The most common
magnetic sensors used in a variety of applications are the Hall
effect sensor and the variable reluctance coil. The drawback of
variable reluctance devices is that they generate signals
proportional in size to the time rate of change of magnetic flux.
The signal size therefore decreases with decreasing speed, and
below a certain flux change rate, the signal disappears into the
noise. Hall effect devices generate a very small raw signal because
of low field sensitivities (0.5.sub..about.5 mV/100 Oe applied
field). This mandates signal conditioning, and requires that a
certain minimum field be available for device operation.
[0006] The concept in combining the magnetostrictive materials and
piezoelectric layers for highly sensitive magnetometer was first
introduced by Mars D. Mermelstein in 1986. In his patents U.S. Pat.
Nos. 4,769,599 and 5,130,654 a magnetometer is disclosed as a
device using a piezoelectric resonator to create a standing wave in
a sensing magnetostrictive ribbon and using a pickup coil to read
out the electromotive force. A minimum detectable field gradient of
7.7 pT/cm Hz was achieved in this device by using a differential
amplifier technique. In October 1997, a device called
piezomagnetometer was patented by Walter N. Pondney. In that device
a stack of 201 alternating piezoelectric and magnetostrictive
layers is used, in which 100 pairs of
piezoelectric-magnetostrictive layer capacitors are connected
electrically in parallel to increase the charge storage by raising
the effective capacitor plate area. The device requires multiple
layers that are placed in a permanent biasing magnetic field normal
to the layer surface. A resolution as high as 1 pT/cm-Hz is
achieved.
SUMMARY OF THE INVENTION
[0007] Our invention represents a new technology of passive
solid-state magnetic sensors based on a combination of
magnetostrictive material and piezoelectric material. The
innovative sensors can be mass produced at low cost in comparison
with any existing magnetic sensor technologies including variable
reluctance coils, Hall-effect devices, magnetoresistance
semiconductors, and the most recently developed giant
magnetoresistance (GMR) metal multilayers. Such a
magnetostrictive/piezoe- lectric sensor does not consume any
electrical power and easily has a field sensitivity larger than 10
mV/Oe. The devices including digital speed meter, digital flow
meter, and digital electrical current meter have been demonstrated
as application examples of the inventive sensors.
[0008] The combination of piezoelectric and magnetostrictive layers
has not yet been used for the general applications of magnetic
sensors. The present invention is basically a device that has two
magnetostrictive layers and one piezoelectric layer or two
piezoelectric layers and one magnetostrictive layer. Three-layer
devices can be connected electrically in series to increase the
voltage by raising capacitor plate separation. The sensors are
designed for general magnetic field detection purposes in
applications ranging from speed, flow, and electrical current
detection to the information storage and imaging. The advantages of
the inventive sensors over the competitive technologies are passive
solid-state, high field sensitivity, wide dynamic range up to
several thousands of Oersted, and low-cost in manufacturing.
[0009] Generally, the present invention uses a piezoelectric
material in contact with a magnetostrictive material. The
magnetostrictive component strains in response to presence of a
magnetic field. This strain couples to the piezoelectric material,
causing this material to produce an electrical output signal. The
main objective of the invention is to provide an innovative, low
cost and highly sensitive magnetic sensor of the simplest design,
which requires no electrical power for the sensing element. The
sensitivity of the device and the operating magnetic field range
can be adjusted through material properties and structure designs
for a variety of applications. The important variables used in the
design include 1) selecting magnetostrictive materials with
appropriate properties, 2) selecting piezoelectric materials with
optimal properties, 3) determining the optimal number of capacitive
elements, 4) selecting the appropriate thickness of each layer, 5)
designing the geometry of the structure, and 6) establishing the
most efficient bonding and packaging methods. The inventive
magnetic sensors can be widely used in replacement of Hall-effect
sensors, variable reluctance coils, and magnetoresistive devices.
The particular applications of the inventive magnetic sensors are
(a) speed detection and controls for rotary machines including
automobiles, airplanes, locomotives, etc., (b) flow meters for
reading and controls of liquid or gas flows, (c) electrical current
meters for reading and controls of electrical power usage, and (d)
micromagnetic field sensors for magnetic recording/reading heads
and magnetic imaging devices.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The foregoing and other objects, features and advantages of
the invention will be apparent from the following more particular
description of preferred embodiments of the invention, as
illustrated in the accompanying drawings in which like reference
characters refer to the same parts throughout the different views.
The drawings are not necessarily to scale, emphasis instead being
placed upon illustrating the principles of the invention.
[0011] FIGS. 1a-1c are schematics of the basic structures of the
passive solid state magnetic sensors according to the
invention.
[0012] FIG. 2 is a schematic of the cantilever structure of the
passive solid state magnetic sensor according to the invention.
[0013] FIGS. 3a and 3b are schematics of planar piezoelectric
design with magnetostrictive ferrite substrate according to the
invention.
[0014] FIGS. 4a-4c are open-loop circuit designs for direct
measurement of voltage generated by a piezoelectric magnetic
sensor; and a closed-loop circuit designs for measurement of the
charge change produced by a piezoelectric magnetic sensor according
to the invention.
[0015] FIGS. 5a, 5b, 5c, 5d are schematics showing a piezoelectric
magnetic read/write head according to several embodiments of the
invention.
[0016] FIG. 6a-6c show a passive piezoelectric magnetic random
access memory (PMRAM) showing simplified view of trilayer
magnetic/piezo/magnetic elements at left and conductors at right.
The passive voltage measured across the spin valve is depicted at
the lower left. A cross section of the main elements of the device
is shown at lower right according to the invention.
[0017] FIG. 7 is a schematic of two dimensional piezoelectric
magnetic sensor array for magnetic imaging according to the
invention.
[0018] FIG. 8 shows the signal output (upper trace) of a
structure-B sensor when an ac magnetic field (lower trace) is
applied according to the invention.
[0019] FIG. 9 shows the RMS of a signal output from a structure-B
sensor as a function of the peak value of an ac magnetic field.
[0020] FIG. 10 shows the RMS of a signal output from a structure-B
sensor biased at 12 Oe as a function of the peak value of an ac
magnetic field.
[0021] FIG. 11 RMS of a signal output from a structure-C sensor
using Fe.sub.50Co.sub.50 as a function of the peak value of an ac
magnetic field.
[0022] FIG. 12 shows the passive solid-state magnetic sensor used
for detecting the rotating speed of a plate with six micro magnets
mounted on the edge in equal distance according to the
invention.
[0023] FIGS. 13, 13a and 13b are schematics of a
microprocessor-based electrical circuit design for the passive
solid-state magnetic sensors used in the motion detection according
to the invention.
[0024] FIG. 14 is a schematic of a conventional Gear-Tooth method
for generating pulse signals in magnetic sensors according to the
invention.
[0025] FIG. 15a and 15b include schematics of the principles of the
passive magnetic sensor used in a conventional Gear-Tooth method
for speed detection according to the invention.
[0026] FIG. 16 is a schematic of the passive solid-state magnetic
sensor used in metering liquid flow rates according to the
invention.
[0027] FIG. 17 is a schematic of flow sensor designed in use with
Swedgelock and PVC fittings according to the invention.
[0028] FIG. 18 shows rotor speed measured as a function of liquid
flow rate by a piezoelectric magnetic sensor.
[0029] FIG. 19 is a schematic of electrical current measurement by
a piezoelectric magnetic sensor according to the invention.
[0030] FIG. 20 shows the highly linear correspondence of
piezoelectric signal output to electrical current.
DETAILED DESCRIPTION OF THE INVENTION
[0031] We have discovered an efficient way to incorporate a
magnetostrictive material with a piezoelectric material to produce
a magnetic field sensor and designed a suitable electrical circuit
for impedance matching and signal amplifying. The principle of such
a sensor is that a strain is induced in a magnetostrictive element
when it is exposed to a magnetic field sufficient to change the
direction of magnetization. This magnetostriction strain is then
transferred into the adjacent piezoelectric element to which it is
bonded. The piezoelectric element, in turn produces an electrical
signal output.
[0032] Single Element With Magnetostrictive Metal
[0033] FIGS. 1a-1c illustrate embodiments of the invented magnetic
sensor. The structure of FIG. 1a is a basic two-layer sensor
containing one piezoelectric layer and one magnetostrictive layer.
Structure of FIG. 1b is comprised of two structure-A sensors; here
the magnetostrictive layer will strain simultaneously on both sides
of piezoelectric layers. Structure of FIG. 1c is also comprised of
two structure-A sensors; here the two magnetostrictive layers will
strain simultaneously on both sides of a piezoelectric layer. The
thickness of individual element and the total number of elements
comprising the structure can be optimized for different
applications.
[0034] Structure of FIG. 1c is preferred for most of the
applications since this structure is more rugged and more cost
effective. In these structures, the electrical signal is produced
by the strain generated at the interfaces of magnetostrictive and
piezoelectric layers by a magnetic field without involving the
bending of the structure, which provides a good mechanical
stability. By expanding the separation for high voltage and
reducing surface areas, multiple sensors can be readily connected
in planar geometry. This concept is particularly appreciated if the
magnetostrictive element is an insulator such as, a ferrite.
[0035] The use of cantilevers is a common method of amplifying
mechanical motion to enhance the strain induced in a piezoelectric
or magnetostrictive material. This is shown in FIG. 2. In this case
a bimorph structure of two piezoelectric layers with one
magnetostrictive layer in the middle is preferred and the two
piezoelectric layers are poled in orthogonal directions so that the
stresses in the two piezoelectric layers due to bending are in
opposite directions. Although this cantilever design produces a
larger signal, the structure of FIG. 1c is found to have sufficient
sensitivity for most of the applications.
[0036] A soft magnetic material is one in which the direction of
magnetization M is readily changed by a modest applied field
(H<100 Oe). The simplest effect that governs the orientation of
magnetization in a soft magnetic material in the absence of an
external field is sample shape. The magnetization vector preferably
assumes an orientation, which minimizes the number of magnetic
poles appearing on the sample surface. Thus M lies along the
longest sample dimension and avoid orientations normal to the
largest area surfaces. This magnetostatic effect can be used to
advantage to design a sensor with a preferred quiescent state of
magnetization. Thus a piece of soft magnetic material in ribbon,
sheet or thin film form will be magnetized in the longer of the
in-plane directions. A field transverse to this quiescent state
will cause a rotation of the magnetization into the field
direction. A 90.degree. rotation of the magnetization causes the
largest shape change in a magnetostrictive material. A field
applied along the preferred axis of magnetization will produce only
180.degree. domain wall motion, which does not change the state of
strain of the magnetic material. Therefore, from the view of
minimizing the demagnetizing field (increasing the effective
magnetic field) in the sensor, the sensor is preferably placed with
the longer side parallel to the sensing magnetic field, and from
the view of maximizing the magnetostriction in the sensor, the
sensor is preferably placed with short side parallel to the sensing
magnetic field. The trade off has to be made when the sensor is
designed.
[0037] The preferred direction of magnetization can also be
controlled by magnetic field annealing. Annealing in a field of 100
Oe min at temperatures below the Curie temperature of the magnetic
materials. The annealing temperature and time, alloy composition
and T.sub.C, cooling rate, and the strength of the field all affect
the results obtained. The bias magnetic field can be also applied
in certain direction to optimize the design.
[0038] Two factors have to be considered for selecting
piezoelectric materials. The piezoelectric voltage constant g
(Vm/N) determines the sensitivity of generating electrical voltage
at a certain force or stress. The temperature coefficient of the g
parameter determines the operation range of the sensors. Two
material candidates which possess high g values are lead zirconate
titanate (PZT-Pb(Zr.sub.xTi.sub.1-x)O.su- b.3) ceramics and
polyvinylidene fluoride (PVDF) polarized polymers. The titanate
ceramics have g values of 10-50 and a high electromechanical
coupling coefficient K of 0.3-0.7. The PVDF polymers have higher g
values, 200-300, but have lower values of K, 0.1-0.15. The major
difference between these two materials is their respective
dielectric constants. The titanate ceramics have relative
dielectric constants .di-elect cons./.di-elect cons..sub.0 that are
about 100 times larger than the relative dielectric constants for
the PVDF polymers. A useful figure of merit for the inventive
sensor is proportional to gK/.di-elect cons. so that the PVDF
polymer has a much higher figure of merit than does titanate
ceramic. However, the temperature instability of the PVDF polymer
is much worse than the temperature instability of the titanate
ceramic. Other piezoelectric materials, such as aluminum nitride
(AIN) and quartz (SiO.sub.x), having a figure of merit similar to
that of the titanate ceramics can also be used for the inventive
sensors. These three materials are a better choice for multilayer
thin film sensors because of their deposition compatibility with
the magnetostrictive metals.
[0039] The two major requirements on the magnetic material are:
[0040] 1. A non-zero magnetostriction so that it strains upon being
magnetized.
[0041] 2. An anisotropy that allows the material to be saturated in
a field of strength governed by the range of fields to be measured.
This involves both the hysteresis properties of the material and
its saturation magnetization value which influences anisotropy
depending on shape of the material and direction of the magnetizing
field.
[0042] For measuring very weak fields, a figure of merit is the
ratio
Q=E.lambda..sub.s.sup.2/2Ku
[0043] Q is maximized when the material gives the most strain in
the weakest fields. Amorphous magnetic alloys can be field annealed
to be greatest magnetized to saturation in fields below 10 Oe. In a
material such as a-FeBSi (.lambda..sub.s.about.35.times.10.sup.-6,
M.sub.s.about.1400 emu/g.sub.1.sup.v), E.about.10.sup.12
d/cm.sup.2, K.sub.u=M.sub.sH.sub.a/2.about.7.times.10.sup.3
erg/cm.sup.3, so Q.about.0.18.
[0044] For a highly magnetostrictive material such as Terfenol-D,
E.about.5.times.10.sup.11 d/cm.sup.3,
.lambda..sub.s=1750.sub.--.times.10- .sup.-6, M.sub.s.about.800
emu/cm.sup.3, K.sub.a.about.1-4.times.10.sup.5 erg/cm.sup.3.
Thus
Q.about.0.01
[0045] which is lower than that for the lower .lambda..sub.S
material. However, Terfenol-D will be suitable for measuring larger
field strengths.
[0046] Nickel and many iron-nickel alloys are good choices because
both anisotropy and magnetostriction can be controlled over
reasonably wide ranges. However, amorphous magnetic alloys remain
the best choice for low field measurements because very low
magnetic anisotropy can be achieved. Iron-cobalt alloy has a
relative large magnetostriction and high saturation field. The
magnetostriction of the annealed Fe.sub.50Co.sub.50 alloy can reach
150.times.10.sup.-6 and the maximum d.lambda./dH can be as high as
2.times.10.sup.-6 per Ostered in comparison with 4.times.10.sup.-6
for FeSiB amorphous ribbon and 0.04.times.10.sup.-6 for Ni. The
advantage of using FeCo alloy is that the linear range and the
sensitivity of magnetostriction verses a magnetic field can be
controlled by annealing process to meet a variety of
applications.
[0047] B. Planar Piezomagnetic Design with Magnetostrictive Ferrite
Substrate
[0048] An alternative device structure is based on the use of a
magnetostrictive insulator (ferrite). In combination with a
piezoelectric, the ferrite can provide an efficient two-layer
planar structure that lends itself to thin film processing and has
the advantage of a high length to area ratio to give a small
capacitance that permits high-frequency operation. In FIGS. 3a and
3b, a ferrimagnetic material with magnetostrictive properties acts
as a substrate for a pattern of parallel piezoelectric stripes of
length l. As indicated, the piezoelectric stripes are electrically
polarized (poled) into a ferroelectric state with an initial
dielectric displacement bias, and are connected in series such that
the polarization directions are continuously reinforcing.
[0049] FIG. 3a depicts the case of alternating pole directions and
a simple connector scheme.
[0050] The arrangement in FIG. 3b is more complicated but offers
the processing advantage of allowing the ferroelectric poling step
to be delayed until after the device structure is completed.
[0051] One important benefit of ferrites is their high initial
permeability and narrow hysteresis loop, which avoids the necessity
of an external bias magnet. Although the magnetostrictive
coefficients are more than a factor of ten smaller than the
magnetostrictive coefficients for metallic materials, such a
terfenol-D, ferrites such as NiZn spinel ferrite can have initial
permeabilities more than a factor of one hundred greater. The
effect of these magnetic parameters on piezomagnetic device
performance can be deduced from the following relation for voltage
sensitivity to magnetic field (which is analogous to the Q figure
of merit):
dV/dH=(d/.di-elect cons.)(.lambda..sub.s/H.sub.K)cl cos .theta.
[0052] where c is Young's modulus. The key design parameter for the
ferrite is the ratio of saturation magnetostriction constant
.lambda..sub.s to the magnetocrystalline anisotropy field H.sub.K.
In most ferrites, H.sub.K can be effectively canceled by cobalt
additions. The key design parameter of the piezoelectric layer is
the ratio of the relevant piezoelectric constant d to the
corresponding dielectric peimittivity .di-elect cons.. The key
device design parameter for maximum voltage is the length l of the
polarized stripe. All of these design parameters must be maximized
for optimum sensitivity.
[0053] One further advantage of this planar device configuration is
the large dynamic range of magnetic field sensing that can be
achieved simply by adjusting the angle .theta. between the magnetic
field vector and the plane of the ferrite substrate. With
hysteresis switching times of ferrites in the nanosecond range and
the low capacitance resulting from small length to area ratios,
application of these devices can be extended to the high-frequency
sensing regime.
[0054] The principle of the generation of the electrical signal
from the innovative sensor is based on the piezoelectric effect of
ferroelectric or paraelectric materials. The sensor structure can
be as electrically equivalent to a voltage source in series with a
capacitor as a charge generator (current source) in parallel with a
capacitor.
[0055] FIG. 4a-4d show three basic circuit approaches for
amplifying and reading the signal output from the sensors.
[0056] In the case of FIG. 4a the charge change in the sensor is
directly measured as an open loop voltage by an operational
amplifier with a high impedance and a low leakage current. In the
case of FIG. 4b and 4c the charge change in the sensor is measured
as a current passing through a resistor in a closed loop
circuit.
[0057] The circuit of FIG. 4a is preferred for the inventive
sensors because the cut-off frequency (3 dB down) can be as low as
8.times.10.sup.-5 Hz with 2 nF of sensor capacitance and 0.08 Hz
with 2 pF of sensor capacitance if the input resistance of the
operational amplifier and the sensor internal resistance are in a
order of 10.sup.12.OMEGA.. More importantly, the measured voltage
with this circuit is independent of the area of the sensor, which
allows a sensor with a miniature size, for example, for magnetic
imaging and magnetic recording read heads. A unit gain follower
with a picoamper electrometer amplifier AD546 (impedance as high as
10.sup.12.OMEGA.), illustraed in FIG. 4d, was built to test sensors
made from FeCo/PZT/FeCo three-layer structure. Frequency
independence of the signal output after the cutoff frequency is
confirmed in a sensor with a size of 2.times.10 mm.sup.2 and a
capacitance of 2 nF. The independence on area of the signal output
is confirmed with a 2.times.10 mm.sup.2 sensor and a 1.times.5
mm.sup.2 sensor. The ratio of sensor width to sensor length was
maintained the same to eliminate the difference of diamagnetizing
effect. The other useful characteristic of the circuit of FIG. 4a
to measure the output of the sensor is that the output voltage is
theoretically proportional to the thickness of the piezoelectric
materials in this layered configuration, which has also been
demonstrated by a comparison of two sensors made from different
thicknesses of PZT plates; one plate is 200 .mu.m thick, and the
other plate is 500 .mu.m thick. The signal of the 500 .mu.m thick
plate is twice as high as the signal for the 200 .mu.m plate.
[0058] The thin-film devices based on a multilayer structure with
alternating magnetostrictive layer and piezoelectric layer are
important for reducing the sensor size and integrating with
semiconductor IC circuits. Two potential applications are outlined
as the following. A trilayer structure as shown in FIGS. 1b or 1c
can be used to read the stored information on the recording media.
The thickness of the devices can be designed as small as 300 .ANG.
to meet the requirement for the rapidly growing density of
recording media. The advantages of these devices over the currently
used MR or GMR technology include high sensitivity, high thermal
stability, and no requirement for input power.
[0059] FIG. 5a shows the film structure having a central
piezoelectric layer sandwiched by two soft magnetic layers of non
zero-magnetostriction. The soft layers are processed (by field
annealing or intrinsic stress from substrate) so that they are
magnetized essentially parallel to the track width of the
underlying bits. The thickness of the piezoelectric layer forms the
read head gap, g, and must be less than about half a bit length:
g<.lambda./2.
[0060] When the head is over a dibit (.+-.H.sub.Z separated by
.lambda./2) the magnetization of one pole piece is tilted down from
the horizontal and the other is tilted up. The magnetization change
in the two layers results in a change in the state of strain of the
piezoelectric layer and a voltage is induced in the piezoelectric
layer. The induced voltage is read directly across the two metallic
pole pieces. It does not matter whether the magnetization vectors
in the two pole pieces are parallel or antiparallel to each other
(the latter is more stable magnetostatically). In either case, the
field above the recorded transition will result in a characteristic
voltage across the piezoelectric layer. This voltage signal will
differ in the parallel and antiparallel cases. The two pole pieces
of the head can be set to one or the other state, whichever is
optimal for the selected piezoelectric material and the
characteristics of the recording medium. The ideal magnetic layer
composition will have a weak cross track anisotropy and non-zero
magnetostriction (e.g. Ni.sub.76Fe.sub.24 or Fe.sub.50Co.sub.50).
The coercivity of these layers should be minimal.
[0061] It is also possible to integrate the write head into this
read head structure by making one of the read pole pieces of a high
flux density material (Fe.sub.50Co.sub.50). The piezoelectric layer
will still be strained to produce a voltage during the read
process. The read/write head must be shielded and one of the
shields provides a low reluctance return path for the write
process. Three possible constructions for read heads that are
integrated with an inductive write head are shown in FIG. 5b. The
view in each case is of the "air bearing surface", i.e. the end of
the recording head looking up from the medium along the z
direction. In all cases, the piezoelectric layer thickness defines
the read gap, d(gap). The insulation between the shields and the
other metallic layers is typically alumina.
[0062] In the configuration of FIG. 5a, the read sensor is
fabricated between two much thicker shield layers. The lower shield
serves as a return flux path for the write process, P1. The bits
are written across the write gap, with one of the read pole pieces
being of a high flux density material and also serving as the other
write pole piece, P2. The track width, w, is defined by P2. In the
configuration of FIG. 5b, the lower shield serves both as P1 and as
one of the read pole pieces. Thus the read and write gaps are both
defined by the thickness of the piezoelectric layer. Again P2
defines the track width. In configuration (c), the read and write
gaps are again separated.
[0063] It is possible also to make use of the benefits of passive
piezoelectric sensing of different magnetic states in MRAM-like
devices for nonvolatile information storage. We describe one
embodiment here.
[0064] In a non-volatile MRAM, writable memory cell is a trilayer
of soft-magnetic/metallic spacer/semihard magnetic films. The
information is written and stored in the semihard layer. The
readout is done by sensing the spin valve resistance across the
trilayer in two states of magnetization for the soft or free layer.
Because the soft and semihard layers have different coercivities,
the resistance changes as a function of field as shown at the lower
left of the figure. Fields greater than H.sub.c2 are required to
write information (one of two stable states of magnetization) in
the semihard layer. A field of magnitude between H.sub.c1 and
H.sub.c2 changes the state of magnetization in the free layer
without altering the written bit. When the free layer magnetization
is changed, the sense of the resistance change across the device
indicates the state of magnetization in the storage layer. The
fields are applied with a cross pattern of conductors that also
leave to locate the address of each bit. While spin-valve based
MRAM has many advantages, it does draw current and the signal is
proportional to the sense current. It may also be frequency limited
by eddy current losses in the leads and switching times in the
magnetic layers.
[0065] By simply replacing the Cu layer with a piezoelectric layer
as shown in FIG. 6, the need for a sense current is removed. When
the state of magnetization is the same in the two magnetic layers,
the piezoelectric layer will be in one state of strain (depending
on the magnetostriction and thickness of the two adjacent layers).
When the state of magnetization is different in the two magnetic
layers, the piezoelectric layer will be in a different state of
strain. These different states of strain will be reflected in the
voltage across the piezoelectric layer which we have demonstrated
to be appreciable and readily measured. This voltage is read at the
x-y address of the bit as in a spin-valve MRAM but there is no need
to power the device by putting a current through it. There are
significant advantages to this piezoelectric-MRAM (P-MRAM) in terms
of speed, signal-to-noise ratio, and power consumption relative to
an all metal MRAM. In addition, it may also add to the lifetime and
reliability of the devices because issues of metallic interdiffsion
across two metallic interfaces are obviated by the presence of a
stable oxide material. A variety of other soft and semihard
magnetic materials which have significant magnetostriction could be
used instead of the ones illustrated in the figure above. In
addition, there are a great many piezoelectric materials that can
be chosen based on material compatibility, signal to noise,
reliability and so on. The shunts, word lines and sense lines can
also be made of conductors other than Au.
[0066] Two dimensional, as schematically shown in FIG. 7 or one
dimensional multilayer sensor arrays can be made for direct
magnetic field imaging. The developed readout integrated circuits
for ultrasonic imaging and pyroelectric IR imaging can be applied
here for detection of the electric charge change in piezoelectric
layer caused by a magnetic field change through magnetostrictive
layer. The readout circuit will be directly integrated with the
magnetic sensor array on a semiconductor wafer. Such a device will
be useful for inspection of magnetic materials including recording
disks, medical imaging or for high speed recording read head
array.
EXAMPLE 1
[0067] A sample of piezoelectric lead zirconate titanate (PZT)
ceramic sheet (2".times.3".times.150 .mu.m thick) was first cut
into one centimeter square pieces. A magnetic amorphous alloy
(FeNiMoSiB) ribbon with a thickness of 30 .mu.m was also cut into
one-centimeter square. A sandwich structure as in FIG. 1b was made
by gluing a magnetic alloy layer in the middle with two PZT layers
outside using conducting silver epoxy. The two PZT layers were
oriented with the same electric pole direction. Two electric leads
were soldered to the sandwich, one on the top surface and one on
the bottom surface as shown in FIG. 1b. The sample was placed in an
ac magnetic field and the two electrical leads were connected to an
oscilloscope. FIG. 8 shows a response signal output (upper trace)
with peak to peak signal of 90 mV. The ac magnetic field (lower
trace) shows amplitude of 10 Gauss. The double frequency of the
output signal with respect to that of the magnetic field is due to
the quadratic dependence of magnetostriction on magnetic field:
e.varies..lambda..sub.s(cos.sup.2-1/3).varies..lambda..sub.s[(H/H.sub.a).-
sup.2-1/3]. The RMS output signal measured as a function of the
magnetic field is shown in FIG. 8. The linear range of the output
signal is from 5 to 15 Oe and the signal is saturated when the
field is over 25 Oe. The magnetic field sensitivity of the sample
over linear range is approximately 5 mV/Oe as calculated from the
curve in FIG. 9. The same measurement was performed on the sample
in the presence of a DC bias magnetic field of 12 Oe. The signal
output now has the same frequency as the drive frequency of the
magnetic field as long as the amplitude of the magnetic field is
smaller than the bias magnetic field of 12 Oe. The RMS output
signal is plotted as a function of the magnetic field in FIG. 10. A
magnetic field sensitivity of at least 20 mV/Oe is obtained in this
case.
EXAMPLE 2
[0068] In this example two 3".times.4".times.50 .mu.m
Fe.sub.50Co.sub.50 sheets (as-rolled) and one 3".times.4".times.175
.mu.m PZT plate were glued together to form the structure C as
shown in FIG. 1 by a manufacturing process provided by Morgan
Matroc, Inc. located at Bedford, Ohio. 200 pieces of 2 mm.times.10
mm sensors were made by dicing the 3".times.4" glued wafer. The
sensitivity of the selected samples was tested to show a good
uniformity. Using a 1/8".times.1/4" NdFeB magnet placed at one end
of the sensor serving as a bias magnetic field, these sensors have
the sensitivity of 5 mV RMS signal per Oe and a large linear range
as shown in FIG. 11.
EXAMPLE 3
[0069] One of the example-2 devices was used to demonstrate the
detection of rotation speed. An aluminum plate mounted with six
micro NdFeB magnets equally spaced at the edge, as shown in FIG.
12, was driven with a DC motor. A sine-wave magnetic field
generated by this rotating aluminum plate was then detected by the
sensor with an electrical sine-wave signal output. An electrical
circuit, including impedance matching, wave modification,
amplifying, pulse counting and displaying, was designed for the
sensor as shown in FIGS. 13, 13a, and 13b. A square-wave pulse
signal was measured from the circuit output. The number of the
pulses was then counted within a minute, converted to the speed of
the motor rotation, and displayed on the liquid crystal screen by
the circuit. Software used in a microprocessor was also developed
to calculate the time between the pulses and then to convert it to
the frequency or revolution per minute (RPM). This approach
eliminates the necessity of using sixty teeth gear for achieving
resolution of one RPM. With this developed software we have built a
tachometer which can read the speed from a wheel having only one
magnet (one pulse per resolution) with a resolution of one RPM. In
this configuration the sensor can be placed as far as 15 mm away
from the rotating aluminum plate. We have also designed the sensor
for ferromagnetic gears which are commonly used in the industry as
shown in FIGS. 15a and 15b. A bias magnetic field was applied by
placing a 1 cm-diameter ferrite permanent magnet in contact with
the long side of a rectangular example-2 device. A commercial 24
pitch ferromagnetic gear was used. A schematic of magnetic field
inside the sensor at tip and at valley of the gear is shown in FIG.
16. Although the sensor has to be placed within 5 mm of the gear,
an electrical pulse signal was clearly detected and converted to
the speed of the rotation by the same electrical circuit as shown
in FIGS. 13a and 13b.
EXAMPLE 4
[0070] One of the example 2-sensors was also demonstrated for the
application of measuring liquid flow rate. In this example a
commercial water flow indicator was purchased and six micromagnets
were placed on the tips of each blade as shown in FIG. 16. An
magnetic sensor was attached to the outside of the flow indicator.
The water flow rate was then measured as a function of the rotation
speed of the blade inside the flow indicator. The calibration and
the conversion of the flow rate unit is easily achieved by a
microprocessor used in the electrical circuit shown in FIGS. 13a
and 13b. We have also designed a flow sensor to fit the popular
pipe fittings such as Swedglock Brass Tee and PVC Tee as shown in
FIG. 17. A rotor with four miro NdFeB magnets mounted on four
blades, respectively, are moving freely at the bottom of the flow
sensor. A flow sensor is sealed inside the Tee at the optimized
height which gives the maximum rotation speed at a certain flow
rate. FIG. 18 shows a linear relationship between rotor speed and
the liquid flow rate.
EXAMPLE 5
[0071] One of the example-2 sensors was also demonstrated for
measuring ac electrical current. A bias magnet was placed at each
end of the sensor shown in FIG. 19. current. A bias magnet was
placed at each end of the sensor shown in FIG. 19. The experiment
was performed by placing a sensor on top of an electrical wire
carrying a current from 1 to 10 A, and a raw signal was measured by
an oscilloscope. The result plotted in FIG. 20 shows a linear
relationship between the RMS signal and the current. The
sensitivity is as large as 2 mV/A without amplification. The
improvement of one order of magnitude higher sensitivity can be
achieved by optimizing the material properties and the geometrical
design. The linear fitting curve passing the origin point shown in
the figure indicates the characteristic of the non zero-offset
voltage for this current sensor in comparison with zero-offset
voltage in the case of Hall effect and GMR current sensors. This
advantage will lead to a simpler design of precision current
sensors. A large dynamic range of the measurement can be achieved
by selecting the magnetic materials and designing the sensors.
[0072] While this invention has been particularly shown and
described with references to preferred embodiments thereof, it will
be understood by those skilled in the art that various changes in
form and details may be made therein without departing from the
spirit and scope of the invention as defined by the appended
claims.
* * * * *