U.S. patent application number 09/905881 was filed with the patent office on 2001-11-08 for structure of capacitor and method for fabricating the same.
This patent application is currently assigned to Hyundai Electronics Industries Co.. Invention is credited to An, Jae Young, Choi, Byung Jae, Kim, Hong Seok, Rha, Kwan Goo.
Application Number | 20010039090 09/905881 |
Document ID | / |
Family ID | 19565112 |
Filed Date | 2001-11-08 |
United States Patent
Application |
20010039090 |
Kind Code |
A1 |
Choi, Byung Jae ; et
al. |
November 8, 2001 |
Structure of capacitor and method for fabricating the same
Abstract
A structure of a lower electrode of a capacitor includes a first
lower electrode, second lower electrodes formed at both sides of
the first lower electrode and electrically connected to and higher
than the first lower electrode, and a Hemispherical Grain-Silicon
(HSG-Si) layer formed on a top surface of the first lower electrode
and inside walls of the second lower electrodes.
Inventors: |
Choi, Byung Jae;
(Chungcheongbuk-do, KR) ; Rha, Kwan Goo;
(Chungcheongbuk-do, KR) ; Kim, Hong Seok;
(Chungcheongbuk-do, KR) ; An, Jae Young;
(Chungcheongbuk-do, KR) |
Correspondence
Address: |
MORGAN, LEWIS & BOCKIUS
1800 M STREET NW
WASHINGTON
DC
20036-5869
US
|
Assignee: |
Hyundai Electronics Industries
Co.
|
Family ID: |
19565112 |
Appl. No.: |
09/905881 |
Filed: |
July 17, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09905881 |
Jul 17, 2001 |
|
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|
09435366 |
Nov 8, 1999 |
|
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6291850 |
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Current U.S.
Class: |
438/255 ;
257/E21.013; 257/E21.019; 257/E21.021; 257/E21.648; 438/398 |
Current CPC
Class: |
H01L 27/10852 20130101;
H01L 28/84 20130101; H01L 28/75 20130101; H01L 28/91 20130101 |
Class at
Publication: |
438/255 ;
438/398 |
International
Class: |
H01L 021/8242 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 23, 1998 |
KR |
57883/1998 |
Claims
What is claimed is:
1. A structure of a lower electrode of a capacitor comprising: a
first lower electrode; second lower electrodes formed at both sides
of the first lower electrode and electrically connected to and
higher than the first lower electrode; and a Hemispherical
Grain-Silicon (HSG-Si) layer formed on a top surface of the first
lower electrode and inside walls of the second lower
electrodes.
2. The structure of claim 1, wherein the first lower electrode is a
stack including a polysilicon layer and an amorphous silicon
layer.
3. The structure of claim 1, wherein the first lower electrode is a
stack including a heavily doped amorphous silicon layer and a
lightly doped amorphous silicon layer.
4. The structure of claim 1, wherein each of the second lower
electrodes includes an outside wall formed of a polysilicon layer
and an inside wall formed of an amorphous silicon layer.
5. The structure of claim 1, wherein each of the second lower
electrodes includes an outside wall formed of heavily doped
amorphous silicon and an inside wall formed of lightly doped
amorphous silicon.
6. The structure of claim 1, wherein only the inside wall of each
of the second lower electrodes has grains of HSG-Si attached
thereto.
7. A method for fabricating a capacitor comprising the steps of:
forming an interlayer insulating film on a semiconductor substrate;
removing a portion of the interlayer insulating film to define a
capacitor region; depositing a first thin semiconductor layer and a
second thin semiconductor layer; depositing a planarizing
insulating film on the second thin semiconductor layer; etching
back the planarizing insulating film, and the first and second thin
semiconductor layers until a surface of the interlayer insulating
film is exposed; removing the planarizing insulating film and the
interlayer insulating film to form a lower electrode; and forming a
HSG-Si layer on a surface of the second thin semiconductor
layer.
8. The method of claim 7, further including the steps of forming a
dielectric film on the lower ecectrode and on the HSG-Si layer, and
forming an upper electrode on the dielectric film.
9. The method of claim 7, wherein the first thin semiconductor
layer is formed of polysilicon and the second this semiconductor
layer is formed of amorphous silicon.
10. The method of claim 7, wherein the first thin semiconductor
layer is formed of heavily doped amorphous silicon and the second
thin semiconductor layer is formed of lightly doped amorphous
silicon.
11. The method of claim 7, wherein the first thin semiconductor
layer is formed of amorphous silicon doped with a phosphorus
concentration of at least 2.0.times.10.sup.20 atoms/cm.sup.3, and
wherein the second thin semiconductor layer is formed of amorphous
silicon doped with a phosphorus concentration less than
2.0.times.10.sup.20 atoms/cm.sup.3.
12. The method of claim 7, wherein the step of forming the HSG-Si
layer includes the steps of: forming silicon seeds at approximately
570-620.degree. C. using one of Si.sub.2H.sub.6 gas and SiH.sub.4
gas; and annealing the capacitor.
13. A method for fabricating a capacitor comprising the steps of:
forming an interlayer insulating film on a semiconductor substrate
and having a contact hole; depositing a conductive layer and a
planarizing insulating film on the interlayer insulating film and
the contact hole; selectively removing the conductive layer and the
planarizing, insulating film to leave the conductive layer and the
planarizing insulating film only in a capacitor-forming region;
forming first semiconductor sidewalls at sides of the planarizing
insulating film and connected to the conductive layer; forming
second semiconductor sidewalls at sides of the first semiconductor
sidewalls; removing the planarizing insulating film; and forming a
HSG-Si (Hemispherical Grain-Silicon) layer on surfaces of the first
semiconductor sidewalls.
14. The method of claim 13, wherein the first semiconductor
sidewalls include amorphous silicon and the second semiconductor
sidewalls include polysilicon.
15. The method of claim 13, wherein the first semiconductor
sidewalls include lightly doped amorphous silicon and the second
semiconductor sidewalls include heavily doped amorphous
silicon.
16. A cylindrical lower electrode of a capacitor comprising: a
first bottom portion in contact with a substrate; a second bottom
portion on the first bottom portion and having different
characteristics from the first bottom portion; a cylinder wall
having the same material as the second bottom portion on its inner
side, and the same material as the first bottom portion on its
outer side; and a layer of HSG-Si (Hemispherical Grain-Silicon)
formed on the inner side of the cylinder wall and the second bottom
portion.
17. The structure of claim 16, wherein the first bottom portion
includes polysilicon and the second bottom portion includes
amorphous silicon.
18. The structure of claim 16, wheiein the first bottom portion
includes heavily doped amorphous silicon and the second bottom
portion includes lightly doped amorphous silicon.
19. The structure of claim 16, wherein only the inner side of the
cylinder wall and the second bottom portion have grains of HSG-Si
attached thereto.
20. The structure of claim 16, further including: an impurity
region in the substrate; an insulating layer on the substrate and
having a contact hole over the impurity region; and a conductive
plug filling the contact hole.
Description
[0001] This application claims the benefit of Korean Patent
Application No. 57883/1988, filed Dec. 23, 1998, which is hereby
incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a capacitor in a dynamic
random access memory (DRAM), and more particularly, to a structure
of a lower electrode of a capacitor which inhibits occurrence of
bridges between nodes, and to a method for fabricating the
same.
[0004] 2. Background of the Related Art
[0005] As a semiconductor memories have developed from millions of
transistors on a single chip to billions of transistors on a single
chip, a number of methods have been employed to increase an
effective area of a capacitor within a restricted area of a cell in
the semiconductor memory. For example, the effective area of the
capacitor is increased by forming a three dimensional storage node,
such as a trench type or a cylinder type. Further, a surface of a
storage electrode used as a lower electrode of the capacitor is
formed of HSG-Si (Hemispherical Grain-Silicon) that has a rough
morphology rather than a smooth morphology, thereby increasing the
effective area of the capacitor. Moreover, the three dimensional
storage node approach and the HSG-Si approach can be combined.
[0006] The combined approach to increase the effective area of the
capacitor will now be explained with reference to FIGS. 1A-1D.
FIGS. 1A-1D illustrate cross-sections each showing a lower
electrode of a capacitor (of a cylinder type) with an HSG-Si
applied to it.
[0007] Referring to FIG. 1A, an interlayer insulating film 3 is
deposited on a semiconductor substrate 1 having an impurity region
2 formed therein. Then, a portion of the intertayer insulating film
3 over the impurity region 2 is selectively removed, to form a
contact hole for a capacitor storage electrode. Next, an amorphous
silicon layer 4 is deposited. Preferably, the amorphous silicon
layer 4 is formed of an amorphous silicon doped with phosphorus at
a concentration of approximately 2.0.times.10.sup.20
atoms/cm.sup.3.
[0008] As shown in FIG. 1B, an oxide film 5 is deposited on an
entire surface of the device, and photoetched to selectively remove
portions of the oxide film 5, leaving the patterned oxide film 5 in
a region around the contact hole. Then, the patterned oxide film 5
is used as a mask to selectively remove the amorphous silicon layer
4. An amorphous silicon layer is deposited on an entire surface of
the device and anisotropically etched to form amorphous silicon
sidewalls 6 at sides of the patterned oxide film 5. The amorphous
silicon sidewalls 6 and the amorphous silicon layer 4 are
electrically connected.
[0009] As shown in FIG. 1C, all of the oxide film 5 is removed,
thereby forming lower electrode 7 of a cylindrical capacitor. As
shown in FIG. 1D, silicon seeds are formed on a surface of the
lower electrode 7 using a seeding gas (such as Si.sub.2H.sub.6 or
SiH.sub.4) at approximately 570-620.degree. C. in an HSG-Si forming
apparatus, and then annealed, to form an HSG-Si layer 8 with a
rough surface. Thus, a cylindnrcal lower electrode 7 with an HSG-Si
"mushroom" structure can be formed. Though not shown in these
figures, by forming a dielectric film and an upper electrode in
succession on the cylindrical lower electrode 7, the capacitor is
completed.
[0010] However, the capacitor and the method for fabricating the
capacitor for a DRAM as described above has a number of problems.
For example, with a gap below 0.2 .mu.m between storage nodes of
capacitors in the semiconductor memory with a high device packing
density, and with the HSG-Si formed on a three dimensional
structure like the cylindrical structure, the HSG-Si can fall off
from regions with lower adhesive forces and subsequently remain
between the storage nodes, without being removed even by a cleaning
process. Thus, the HSG-Si can create bridges that cause electrical
shorts between the nodes, mostly by the HSG-Si that has fallen off
from peak points (end points in the cylindrical form) in the lower
electrode. That is, the weak connection of a neck portion of the
HSG-Si "mushroom" structure (resulting from a lack of the amorphous
silicon required for formation of the HSG-Si due to a relatively
thin amorphous silicon at the peak point) causes the fall-off or
hang-down that formed bridges between adjacent nodes. Also, the
HSG-Si connected to an external surface of the lower electrode can
fall-off or hangdown in the course of cleaning or a high
temperature annealing process, thereby causing bridges between
adjacent nodes.
SUMMARY OF THE INVENTION
[0011] Accordingly, the present invention is directed to a
structure of a lower electrode of a capacitor and a method for
fabricating the same that substantially obviates one or more of the
problems due to the limitations and disadvantages of the related
art.
[0012] An object of the present invention is to provide a structure
of a lower electrode of a capacitor and a method for fabricating
the same which can inhibit occurrence of bridges.
[0013] Additional features and advantages of the invention will be
set forth in the description which follows, and in part will be
apparent from the description, or may be learned by practice of the
invention. The objectives and other advantages of the invention
will be realized and attained by the structure particularly pointed
out in the written description and claims hereof as well as the
appended drawings.
[0014] To achieve these and other advantages and in accordance with
the purpose of the present invention, as embodied and broadly
described, in a first aspect of the present invention there is
provided a structure of a lower electrode of a capacitor including
a first lower electrode, second lower electrodes formed at both
sides of the first lower electrode and electrically connected to
and higher than the first lower electrode, and a Hemispherical
Grain-Silicon (HSG-Si) layer formed on a top surface of the first
lower electrode and inside walls of the second lower
electrodes.
[0015] In another aspect of the present invention, there is
provided a method for fabricating a capacitor comprising the steps
of forming an interlayer insulating film on a semiconductor
substrate, removing a portion of the interlayer insulating film to
define a capacitor region, depositing a first thin semiconductor
layer and a second thin semiconductor layer, depositing a
planarizing insulating film on the second thin semiconductor layer,
etching back the planarizing insulating film, and the first and
second thin semiconductor layers until a surface of the interlayer
insulating film is exposed, removing the planarizing insulating
film and the interlayer insulating film to form a lower electrode,
and forming a HSG-Si (Hemispherical Grain-Silicon) layer on a
surface of the second thin semiconductor layer.
[0016] In another aspect of the present invention, there is
provided a method for fabricating a capacitor comprising the steps
of forming an interlayer insulating film on a semiconductor
substrate and having a contact hole, depositing a conductive layer
and a planarizing insulating film on the interlayer insulating film
and the contact hole, selectively removing the conductive layer and
the planarizing insulating film to leave the conductive layer and
the planarizing insulating film only in a capacitor-forming region,
forming first semiconductor sidewalls at sides of the planarizing
insulating film and connected to the conductive layer, forming
second semiconductor sidewalls at sides of the first semiconductor
sidewalls, removing the planarizing insulating film, and forming a
HSG-Si (Hemispherical Grain-Silicon) layer on surfaces of the first
semiconductor sidewalls.
[0017] In another aspect of the present invention, there is
provided a lower electrode of a capacitor including a dielectric
layer on a cylindrical lower electrode, and an upper electrode on
the dielectric layer, the cylindrical lower electrode including a
first bottom portion in contact with the plug, a second bottom
portion on the first bottom portion and having different
characteristics from the first bottom portion, a cylinder wall
having the same material as the second bottom portion on its inner
side, and the same material as the first bottom portion on its
outer side, and a layer of HSG-Si (Hemispherical Grain-Silicon)
formed on the inner side of the cylinder wall and the second bottom
portion.
[0018] It is to be understood that both the foregoing general
description and the following detailed description are exemplary
and explanatory and are intended to provide further explanation of
the invention as claimed.
BRIEF DESCRIPTION OF THE ATTACHED DRAWINGS
[0019] The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate embodiments of
the invention and together with the description serve to explain
the principles of the invention.
[0020] In the drawings:
[0021] FIGS. 1A-1D illustrate cross-sections showing steps of a
related art method for fabricating a lower electrode of a
capacitor;
[0022] FIGS. 2A-2F illustrate cross-sections showing steps of a
method for fabricating a lower electrode of a capacitor in
accordance with a first preferred embodiment of the present
invention;
[0023] FIGS. 3A-3F illustrate cross-sections showing steps of a
method for fabricating a lower electrode of a capacitor in
accordance with a second preferred embodiment of the present
invention;
[0024] FIGS. 4A-4D illustrate cross-sections showing steps of a
method for fabricating a lower electrode of a capacitor in
accordance with a third preferred embodiment of the present
invention;
[0025] FIG. 5 illustrates a cross-section showing the lower
electrode of a capacitor in accordance with the first preferred
embodiment of the present invention; and
[0026] FIG. 6 illustrates a cross-section showing the lower
electrode of a capacitor in accordance with the second preferred
embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0027] Reference will now be made in detail to the preferred
embodiments of the present invention, examples of which are
illustrated in the accompanying drawings.
[0028] Referring to FIG. 2A, a first interlayer insulating film 13,
such as an oxide film, is deposited on a semiconductor substrate 11
that has an impurity region 12 formed therein. A portion of the
interlayer insulating film 13 over the impurity region 12 is
selectively removed to form a contact hole for a capacitor storage
node. Polysilicon or metal is deposited on an entire surface of the
device and etched back to expose a surface of the first interlayer
insulating film 13, to form a plug 14 in the contact hole.
[0029] As shown in FIG. 2B, a nitride film 19 and a second
interlayer insulating film 15, such as an oxide film, are formed,
and a capacitor formation region is defined therein. The nitride
film 19 and the second interlayer insulating film 15 in the
capacitor formation region are selectively removed. The nitride
film 19 and the second interlayer insulating film 15 should be
thick enough for capacitor formation since the thicknesses are
related to a capacitance of the capacitor.
[0030] As shown in FIG. 2C, a thin polysilicon layer 20 is
deposited on an entire surface preferably at a temperature of at
least 560.degree. C. A thin amorphous silicon layer 16 is deposited
on the thin polysilicon layer 20 at a temperature below 530.degree.
C. Then, a planarizing insulating film 17, such as an SOG (Silicon
On Glass), is deposited on the amorphous silicon layer 16. The
amorphous silicon layer 16 is formed of amorphous silicon doped
with phosphorus at a concentration of approximately
2.0.times.10.sup.20 atoms/cm.sup.3.
[0031] As shown in FIG. 2D, the planarizing insulating film 17, the
amorphous silicon layer 16, and the polysilicon layer 20 are etched
back until a surface of the second interlayer insulating film 15 is
exposed.
[0032] As shown in FIG. 2E, all of the planarizing insulating film
17 and the second interlayer insulating film 15 are wet etched to
form a lower electrode of the capacitor.
[0033] As shown in FIG. 2F, silicon seeds are formed on a surface
of the amorphous silicon layer 16 in the lower electrode at
approximately 570-620.degree. C. using a seeding gas (Si.sub.2H, or
SiH.sub.4) in an HSG-Si forming apparatus, and annealed to form an
HSG-Si layer 18 with a rough surface. Here, the HSG-Si 18 is formed
on a portion other than the polysilicon layer (an outside surface
of the lower electrode). Then, a dielectric film and an upper
electrode (not shown) are formed on the lower electrode in
succession, to complete a capacitor.
[0034] A method for fabricating a capacitor in accordance with
another embodiment of the present invention will now be explained
with reference to FIGS. 3A-3F.
[0035] Referring to FIG. 3A, a first interlayer insulating film 13
is deposited on a semiconductor substrate 11 having an impurity
region 12 formed therein, and a portion of the first interlayer
insulating film 13 over the impurity region 12 is selectively
removed to form a contact hole for a capacitor storage electrode.
Polysilicon or metal is deposited on an entire surface of the
device and etched back to expose a surface of the first interlayer
insulating film 13 to form a plug 14 in the contact hole.
[0036] As shown in FIG. 3B, a nitride film 19 and a second
interlayer insulating film 15, such as an oxide film, are formed,
and a capacitor formation region is defined therein. The nitride
film 19 and the second interlayer insulating film 15 in the
capacitor formation region are selectively removed. The nitride
film 19 and the second interlayer insulating film 15 must be
sufficiently thick since the thicknesses are related to a
capacitance of the capacitor.
[0037] As shown in FIG. 3C, a heavily doped thin amorphous silicon
layer 21 with a phosphorus concentration of at least
2.0.times.10.sup.20 atoms/cm.sup.3 is deposited on an entire
surface. A lightly doped thin amorphous silicon layer 22 with a
phosphorus concentration below 2.0.times.10.sup.20 atoms/cm.sup.3
is deposited thereon. Then, a planarizing insulating film 17, such
as an SOG (Silicon On Glass), is deposited on the lightly doped
thin amorphous silicon layer 22.
[0038] As shown in FIG. 3D, the planarizing insulating film 17, the
lightly doped thin amorphous silicon layer 22, and the heavily
doped amorphous silicon layer 21 are etched back. As shown in FIG.
3E, all of the planarizing insulating film 17 and the second
interlayer insulating film 15 are wet etched, to form a lower
electrode of the capacitor.
[0039] As shown in FIG. 3F, silicon seeds are formed on a surface
of the lower electrode at approximately 570-620.degree. C. using a
seeding gas (Si.sub.2H.sub.6 or SiH.sub.4) in an HSG-Si forming
apparatus, and then annealed, to form an HSG-Si layer 18 with a
rough surface. The HSG-Si layer 18 forms easiy on the lightly doped
amorphous silicon layer 22 (an inside surface of the lower
electrode), while the HSG-Si layer 18 forms poorly on the heavily
doped amorphous silicon layer 21 (an outside surface of the lower
electrode). Accordingly, the HSG-Si layer 18 formed on the lightly
doped amorphous silicon layer 22 (an inside surface of the lower
electrode) has large grains, while the HSG-Si layer 18 formed on
the heavily doped amorphous silicon layer 21 (an outside surface of
the lower electrode) has small grains, thereby preventing bridges
because the small grain HSG-Si layer 18 formed on the outside
surface is relatively unlikely to fall off. A dielectric film and
an upper electrode (not shown) are formed in succession on the
lower electrode to complete a capacitor.
[0040] A method for fabricating a capacitor in accordance with
another embodiment of the present invention will now be explained
with reference to FIGS. 4A-4D.
[0041] Referring to FIG. 4A, a first interlayer insulating film 13
is formed on a semiconductor substrate 11 having an impurity region
12 formed therein, and a portion of the first interlayer insulating
film 13 over the impurity region 12 is selectively removed, to form
a contact hole for a capacitor. Polysilicon or metal 24 is
deposited on an entire surface, and a cap layer 25 of, for example,
PSG, is deposited thereon. A capacitor forming region is defined by
photolithography, and the cap layer 25, and the polysilicon or
metal 24 are selectively removed, thereby remaining only in the
capacitor forming region.
[0042] As shown in FIG. 4B, amorphous silicon is deposited on an
entire surface of the substrate including the first interlayer
insulating film 13 and the cap layer 25, and is anisotropically
etched to form amorphous silicon sidewalls 26 at sides of the cap
layer 25. The amorphous silicon is then lightly doped with a
phosphorus concentration below 2.0.times.10.sup.20
atom/cm.sup.3.
[0043] As shown in FIG. 4C, a polysilicon layer is deposited on an
entire surface and anisotropically etched to form polysilicon
sidewalls 27 at sides of the amorphous silicon sidewalls 26,
thereby fabricating a lower electrode of a capacitor having
polysilicon or metal 24, amorphous silicon sidewalls 26, and
polysilicon sidewalls 27. An amorphous silicon layer heavily doped
with a phosphorus concentration over 2.0.times.10.sup.20
atom/cm.sup.3 may also be used instead of the polysilicon.
[0044] As shown in FIG. 4D, the cap layer 25 is removed entirely,
and then silicon seeds are formed on a surface of the lower
electrode at approximately 570-620.degree. C. using a seeding gas
(Si.sub.2H.sub.6 or SiH.sub.4) in an HSG-Si forming apparatus, and
then annealed to form an HSG-Si layer 18 with a rough surface. The
HSG-Si layer 18 forms easily on the lightly doped amorphous silicon
layer 26 (an inside surface of the lower electrode), while the
HSG-Si layer 18 forms poorly on the polysilicon sidewalls 27 (an
outside surface of the lower electrode). A dielectric film and an
upper electrode (not shown) are formed in succession on the lower
electrode, thereby completing a capacitor.
[0045] The capacitor of the present invention has a general
structure as shown in FIGS. 5-6.
[0046] In FIG. 5, the lower electrode of the capacitor in
accordance with the first preferred embodiment of the present
invention includes the interlayer insulating film 13 formed on the
semiconductor substrate 11 having the impurity region 12 formed
therein. The interlayer insulating film 13 has the contact hole
formed over the impurity region 12. The plug 14 is formed in the
contact hole. The first lower electrode 23a is formed on the
interlayer insulating film 13 including the plug 14 (and
electrically connected to the plug 14), and second lower electrodes
23b and 23c are formed at both sides of the first lower electrode
23a, and electrically connected to, and higher than, the first
lower electrode 23a. The HSG-Si layer 18 is formed on a top surface
of the first lower electrode 23a and inside the surfaces of the
second lower electrodes 23b and 23c.
[0047] In FIG. 6, the lower electrode of the capacitor in
accordance with the second preferred embodiment of the present
invention includes the interlayer insulating film 13 formed on the
semiconductor substrate 11 having an impurity region 12 formed
therein. The interlayer insulating film 13 has the contact hole
formed over the impurity region 12. The plug 14 is formed in the
contact hole. The first lower electrode 23a is formed on the
interlayer insulating film 13 and the plug 14, and electrically
connected to both. The second lower electrodes 23b and 23c are
formed at both sides of the first lower electrode 23a, electrically
connected to, and higher than, the first lower electrode 23a. The
first HSG-Si layer 18a is formed on a top surface of the first
lower electrode 23a and inside surfaces of the second lower
electrodes 23b and 23c. The second HSG-Si layer 18b, with smaller
grains than the first HSG-Si layer 18a, is formed on the outside
surfaces of the second lower electrodes 23b and 23c.
[0048] The structure of the lower electrode of the capacitor in
accordance with the third embodiment of the present invention is
similar to the structure of the lower electrode of the capacitor of
the first embodiment. Here, as shown in FIGS. 2F and 3F (though not
shown in FIGS. 4 and 5), the first lower electrode 23a may be a
stack of a polysilicon layer/amorphous silicon layer, or a stack of
a heavily doped amorphous silicon layer/lightly doped amorphous
layer. The second lower electrode 23b and 23c may be an inside wall
of an amorphous silicon layer and an outside wall of a polysilicon
layer, or an inside wall of a lightly doped amorphous layer and an
outside wall of a heavily doped amorphous silicon layer.
[0049] The structure of a lower electrode of a capacitor and the
method for fabricating the same of the present invention have a
number of advantages. For example, by not forming the HSG-Si layer
on an outside wall of a cylindrical lower electrode or by forming
the HSG-Si layer on the outside wall with relatively smaller grains
than the HSG-Si layer on an inside wall, occurrence of bridges
between nodes caused by fall-off of the HSG-Si layer can be
prevented, thereby improving yield of DRAMs.
[0050] It will be apparent to those skilled in the art that various
modifications and variations can be made in the structure of a
lower electrode of a capacitor and the method for fabricating the
same of the present invention without departing from the spirit or
scope of the invention. Thus, it is intended that the present
invention cover the modifications and variations of this invention
provided they come within the scope of the appended claims and
their equivalents.
* * * * *