U.S. patent application number 09/756651 was filed with the patent office on 2001-09-13 for discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus.
This patent application is currently assigned to Mitsubishi Heavy Industries, Ltd.. Invention is credited to Aoi, Tatsufumi, Mashima, Hiroshi, Murata, Masayoshi, Satake, Koji, Takeuchi, Yoshiaki, Yamakoshi, Hideo.
Application Number | 20010021422 09/756651 |
Document ID | / |
Family ID | 26587336 |
Filed Date | 2001-09-13 |
United States Patent
Application |
20010021422 |
Kind Code |
A1 |
Yamakoshi, Hideo ; et
al. |
September 13, 2001 |
Discharge plasma generating method, discharge plasma generating
apparatus, semiconductor device fabrication method, and
semiconductor device fabrication apparatus
Abstract
A discharge plasma generating method includes (a) opposing a
discharge electrode having a substantially plane discharge portion
to a substrate to be processed in a vacuum reaction vessel such
that the discharge electrode and the substrate are substantially
parallel to each other, (b) evacuating the vacuum reaction vessel
and supplying a process gas to a space between the discharge
electrode and the substrate, and (c) applying HF power to the
discharge electrode such that an envelope representing the spatial
distribution of a HF voltage .phi. on the discharge electrode in a
split second changes in accordance with a function including time
as a parameter, thereby generating a discharge plasma of the
process gas between the discharge electrode and the substrate, with
substantially no standing wave of the HF voltage .phi. generated on
the discharge electrode.
Inventors: |
Yamakoshi, Hideo;
(Yokohama-shi, JP) ; Satake, Koji; (Yokohama-shi,
JP) ; Takeuchi, Yoshiaki; (Nagasaki-shi, JP) ;
Mashima, Hiroshi; (Nagasaki-shi, JP) ; Aoi,
Tatsufumi; (Nagasaki-shi, JP) ; Murata,
Masayoshi; (Nagasaki-shi, JP) |
Correspondence
Address: |
ARMSTRONG,WESTERMAN, HATTORI,
MCLELAND & NAUGHTON, LLP
1725 K STREET, NW, SUITE 1000
WASHINGTON
DC
20006
US
|
Assignee: |
Mitsubishi Heavy Industries,
Ltd.
Tokyo
JP
|
Family ID: |
26587336 |
Appl. No.: |
09/756651 |
Filed: |
January 10, 2001 |
Current U.S.
Class: |
427/569 ;
315/169.3 |
Current CPC
Class: |
H01J 37/32165 20130101;
H01J 37/32174 20130101; H01J 37/32082 20130101 |
Class at
Publication: |
427/569 ;
315/169.3 |
International
Class: |
H05H 001/24; G09G
003/10; H05H 001/24 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 13, 2000 |
JP |
2000-069044 |
Mar 24, 2000 |
JP |
2000-085281 |
Claims
What is claimed is:
1. A discharge plasma generating method comprising, the steps of;
(a) opposing a discharge electrode having a substantially plane
discharge portion to a substrate to be processed in a vacuum
reaction vessel such that said discharge electrode and said
substrate are substantially parallel to each other; (b) evacuating
said vacuum reaction vessel and supplying a process gas to a space
between said discharge electrode and said substrate; and (c)
applying high-frequency power to said discharge electrode such that
an envelope representing the spatial distribution of a
high-frequency voltage .phi. on said discharge electrode in a split
second changes in accordance with a function including time as a
parameter, thereby generating a discharge plasma of the process gas
between said discharge electrode and said substrate, with
substantially no standing wave of the high-frequency voltage .phi.
generated on said discharge electrode.
2. A method according to claim 1, wherein the step (c) comprises
using a plurality of high-frequency power supplies to cause the
envelope to change at all times in accordance with the function
including time as a parameter.
3. A method according to claim 2, wherein the step (c) comprises:
connecting a plurality of power supplies for independently
oscillating high frequencies to said discharge electrode; and
supplying high-frequency power from each of said power supplies to
said discharge electrode.
4. A method according to claim 2, wherein the step (c) comprises:
connecting a plurality of power supplies to said discharge
electrode; and supplying high-frequency power components having
different frequencies from said plurality of power supplies to said
discharge electrode.
5. A method according to claim 2, wherein the difference between
the different oscillation frequencies is not more than 20% of the
oscillation frequency of each power supply.
6. A method according to claim 2, wherein the step (c) comprises
connecting a plurality of power supplies to said discharge
electrode and changing at all times the difference between the
phase of a high frequency supplied from one of said plurality of
power supplies and the phase of a high frequency supplied from at
least one of the other power supplies.
7. A method according to claim 6, wherein the step (c) comprises
using a phase shifter as means for changing the phase
difference.
8. A method according to claim 7, wherein said phase shifter is
inserted between a high-frequency oscillator and an amplifier, said
high-frequency oscillator determines the oscillation frequency of a
high-frequency signal, and said amplifier amplifies the
high-frequency signal from said high-frequency oscillator.
9. A method according to claim 1, wherein a plurality of feeding
points are used to feed power to said discharge electrode, said
plurality of feeding points being attached to said discharge
electrode so as to be symmetrical with respect to a central line or
a central point of said discharge electrode.
10. A method according to claim 2, wherein the step (c) comprises
using an impedance matching circuit for matching the impedance of
said discharge electrode with the impedance of each power supply,
and inserting an isolator between said impedance matching circuit
and said power supply to reduce input high-frequency power to said
power supply from another power supply, thereby protecting said
power supply.
11. A method according to claim 2, wherein the step (c) comprises
using first and second power supplies, supplying high-frequency
power having a first frequency from said first power supply to said
discharge electrode, and supplying high-frequency power having a
second frequency from said second power supply to said discharge
electrode, such that the difference between the first and second
frequencies is not more than 4% of the average value of the first
and second frequencies.
12. A method according to claim 11, wherein the difference is not
more than 1% of the average value of the first and second
frequencies.
13. A method according to claim 2, wherein the step (c) comprises
limiting an output from one power supply in accordance with the
magnitude of high-frequency power incident to another power supply
through said discharge electrode.
14. A method according to claim 2, wherein the step (c) comprises
inserting a high-frequency mixer between said plurality of power
supplies and said discharge electrode, mixing high-frequency power
components from said plurality of power supplies by said
high-frequency mixer, and supplying the mixed high-frequency power
to said electrode.
15. A method according to claim 1, wherein the step (c) comprises
changing each hour an envelope generated on said discharge
electrode by performing AM modulation, FM modulation, or frequency
chirp for high-frequency power oscillated by said power supply.
16. A method according to claim 1, wherein the step (c) comprises
previously measuring a plurality of values of at least one of a
voltage distribution, plasma generation density distribution,
radical generation density distribution, film deposition
distribution, etching distribution, and semiconductor film
characteristic distribution, with respect to the difference between
frequencies, the value of each frequency, the difference between
phases, or the range of AM modulation, FM modulation, or frequency
chirp, and obtaining a uniform distribution by time average or time
integral on the basis of the measurement results by adjusting at
least one of the time, period, and frequency of power supply to
said discharge electrode with respect to the difference between
specific frequencies, the value of each frequency, the difference
between phases, or the range of AM modulation, FM modulation, or
frequency chirp.
17. A method according to claim 1, wherein the step (c) comprises
making the cycle of plasma ON/OFF resulting from a change in the
envelope distribution shorter than the extinction life of an active
atom, active molecule, or ion in the generated plasma.
18. A method according to claim 17, wherein the cycle is not more
than 1/2 the extinction life of an active atom, active molecule, or
ion in the generated plasma.
19. A method according to claim 1, wherein the step (c) comprises
making the cycle of plasma ON/OFF resulting from a change in the
envelope distribution shorter than at least one of a life .tau. of
an SiH.sub.3 active molecule given by:
.tau..apprxeq.(.DELTA.x).sup.2/(2D) where D: a diffusion
coefficient (=2.5.times.10.sup.3 (cm.sup.2/sec)) .DELTA.x: the
distance (cm) from a discharge electrode to a substrate and a life,
1.1.times.10.sup.-4 sec, of a hydrogen atom radical.
20. A method according to claim 19, wherein the cycle is not more
than 1/2 of .tau. or not more than 1/2 of 1.1.times.10.sup.-4
sec.
21. A method according to claim 1, wherein the step (c) comprises
making the cycle of plasma ON/OFF resulting from a change in the
envelope distribution longer than, and not more than 10 times, the
generation life of an active atom, active molecule, or ion in the
generated plasma.
22. A method according to claim 21, wherein the cycle is twice to
four times the generation life of an active atom, active molecule,
or ion in the generated plasma.
23. A method according to claim 1, wherein the step (c) comprises
setting a plasma ON/OFF frequency resulting from a change in the
envelope distribution to be in a range of 0.5 Hz (inclusive) to 100
kHz (inclusive), i.e., a plasma ON time resulting therefrom to be
in a range of 0.01 msec (inclusive) to 1 sec (inclusive).
24. A method according to claim 23, wherein the ON/OFF frequency is
not more than 10 kHz, i.e., the plasma ON time is not more than 0.1
msec.
25. A method according to claim 1, wherein the step (c) comprises
making the cycle of plasma ON/OFF resulting from a change in the
envelope distribution longer than a discharge region dwell time t
of a source gas given by: t.apprxeq.(S.multidot..DELTA.x)/Q where
S: a substrate area (cm.sup.2) .DELTA.x: the distance (cm) from a
discharge electrode to a substrate Q: a volume flow rate
(cm.sup.3/sec)
26. A method according to claim 25, wherein the cycle is not less
than twice the dwell time t.
27. A method according to claim 1, wherein said discharge electrode
is a ladder electrode or a mesh electrode.
28. A method according to claim 1, wherein said discharge electrode
is a plate-like electrode, and a plate-like counter electrode for
supporting said substrate and said discharge electrode are arranged
substantially parallel to each other.
29. A method according to claim 2, comprising a first power supply
for supplying high-frequency power to said discharge electrode, and
a second power supply for supplying high-frequency power to said
counter electrode.
30. A method according to claim 1, wherein the frequency of the
high-frequency power is 10 to 800 MHz.
31. A method according to claim 2, wherein the difference between
frequencies oscillated by said plurality of high-frequency power
supplies is 0.1 to 10.0 MHz.
32. A method according to claim 31, wherein the difference is 1.5
to 6.0 MHz.
33. A method according to claim 1, wherein a length L (cm) of said
discharge electrode from an incident point to a reflection point of
a high frequency satisfies
2.times.10.sup.3/f.ltoreq.L.ltoreq.20.times.10.s- up.3/f where f
represents a VHF (MHz).
34. A method according to claim 33, wherein the lower limit of the
length L of said discharge electrode is 4.times.10.sup.3/f.
35. A method according to claim 1, wherein the step (c) comprises
locally supplying at least one type of a gas selected from the
group consisting of hydrogen, argon, neon, helium, and nitrogen to
said feeding portion or to parts where suppression of deposition is
necessary, thereby suppressing deposition of film formation
components and generation of particles in said feeding portion or
parts.
36. A semiconductor device fabrication method comprising, the steps
of; (a) loading a substrate to be processed into a vacuum reaction
vessel and placing said substrate on a heater electrode such that a
discharge electrode having a substantially plane discharge portion
and said substrate are substantially parallel to each other; (b)
evacuating said vacuum reaction vessel, supplying a process gas to
a space between said discharge electrode and said substrate, and
heating said substrate by said heater electrode; and (c) applying
high-frequency power to said discharge electrode such that an
envelope representing the spatial distribution of a high-frequency
voltage .phi. on said discharge electrode hour by hour changes in
accordance with a function including time as a parameter, thereby
generating a discharge plasma of the film formation gas between
said discharge electrode and said substrate, with substantially no
standing wave of the high-frequency voltage .phi. generated on said
discharge electrode.
37. A method according to claim 36, wherein the step (c) comprises
making the cycle of plasma ON/OFF resulting from a change in the
envelope distribution shorter than the extinction life of an active
atom, active molecule, or ion in the generated plasma.
38. A method according to claim 37, wherein the cycle is not more
than 1/2 the extinction life of an active atom, active molecule, or
ion in the generated plasma.
39. A method according to claim 36, wherein the step (c) comprises
making the cycle of plasma ON/OFF resulting from a change in the
envelope distribution substantially equal to or shorter than a life
.tau. of an SiH.sub.3 active molecule given by:
.tau..apprxeq.(.DELTA.X).sup.2/(2D) where D: a diffusion
coefficient (=2.5.times.10.sup.3 (cm.sup.2s.sup.-1)) .DELTA.x: the
distance (cm) from a discharge electrode to a substrate or
substantially equal to or shorter than a life, 1.1.times.10.sup.-4
sec, of a hydrogen atom radical.
40. A method according to claim 39, wherein the cycle is not more
than 1/2 of .tau. or not more than 1/2 of 1.1.times.10.sup.-4
sec.
41. A method according to claim 36, wherein the step (c) comprises
locally supplying at least one type of a gas selected from the
group consisting of hydrogen, argon, neon, helium, and nitrogen to
a feeding portion or to parts where suppression of deposition is
necessary, said feeding portion being a portion where said
discharge electrode receives high-frequency power from a power
supply.
42. A method according to claim 36, wherein said discharge
electrode has dimensions of not less than 500 mm.times.500 mm, said
substrate is made of glass, and the step (c) comprises heating said
substrate to a temperature of 80.degree. C. to 350.degree. C. by
said heater electrode.
43. A method according to claim 36, wherein said discharge
electrode has dimensions of not less than 500 mm.times.500 mm, said
substrate is made of a metal, and the step (c) comprises heating
said substrate to a temperature of 80.degree. C. to 500.degree. C.
by said heater electrode.
44. A method according to claim 36, wherein said discharge
electrode has dimensions of not less than 500 mm.times.500 mm, said
substrate is made of a resin, and the step (c) comprises heating
said substrate to a temperature of 80.degree. C. to 200.degree. C.
by said heater electrode.
45. A method according to claim 36, wherein the step (c) comprises
setting the difference between a plurality of high frequencies to
0.1 to 10.0 MHz.
46. A method according to claim 36, wherein the step (c) comprises
setting the difference between a plurality of high frequencies to
1.5 to 6.0 MHz.
47. A discharge plasma generating apparatus comprising: a chamber;
a substrate mounting table for holding a substrate in said chamber;
a discharge electrode opposed to said substrate on said substrate
table in said chamber; exhaust means for evacuating said chamber;
gas supply means for supplying a process gas into said chamber; a
high-frequency power-supply circuit for supplying high-frequency
power to said discharge electrode; and control means for
controlling power supply from said high-frequency power-supply
circuit to said discharge electrode such that an envelope
representing the spatial distribution of a high-frequency voltage
.phi. on said discharge electrode changes each hour in accordance
with a function including time as a parameter.
48. An apparatus according to claim 47, wherein said high-frequency
power-supply circuit comprises: a single high-frequency oscillator
connecting with said discharge electrode via a plurality of feeding
points; a distributor inserted between said high-frequency
oscillator and said discharge electrode to distribute
high-frequency power oscillated by said high-frequency oscillator
to said plurality of feeding points; and a plurality of amplifiers
inserted between said distributor and said discharge electrode to
amplify the high-frequency power components distributed by said
distributor.
49. An apparatus according to claim 47, wherein said high-frequency
power-supply circuit comprises: a plurality of high-frequency
oscillators connected to said discharge electrode via a plurality
of feeding points to independently oscillate high frequencies; and
an amplifier inserted between each of said plurality of
high-frequency oscillators and said discharge electrode to amplify
the oscillated frequency.
50. An apparatus according to claim 48, wherein said high-frequency
power-supply circuit further comprises: a plurality of impedance
matching circuits inserted between said plurality of high-frequency
oscillators and said discharge electrode to match the impedances of
said plurality of high-frequency oscillators with the impedance of
said discharge electrode; and an isolator inserted between each
impedance matching circuit and each high-frequency oscillator to
reduce input high-frequency power from another high-frequency
oscillator to said high-frequency oscillator in order to protect
said high-frequency oscillator.
51. An apparatus according to claim 48, wherein said high-frequency
power-supply circuit comprises a phase shifter inserted between
said plurality of high-frequency oscillators and at least one
amplifier to shift the phase of a high-frequency signal oscillated
by said high-frequency oscillator.
52. An apparatus according to claim 47, wherein said high-frequency
power-supply circuit comprises: a plurality of high-frequency
oscillators connected to said discharge electrode via a plurality
of feeding points; and a high-frequency mixer inserted between said
plurality of high-frequency oscillators and said discharge
electrode to mix high-frequency signals oscillated by said
plurality of high-frequency oscillators.
53. An apparatus according to claim 52, further comprising an
amplifier inserted between said high-frequency mixer and said
discharge electrode to amplify the high-frequency signal mixed by
said high-frequency mixer.
54. An apparatus according to claim 47, wherein said high-frequency
power-supply circuit comprises an arbitrary waveform generator for
oscillating a multiple high frequency having a plurality of
frequency components such that the envelope distribution on said
electrode changes each hour.
55. An apparatus according to claim 47, wherein said discharge
electrode has the shape of a ladder, mesh, rod, or rectangular
plate, and said high-frequency power-supply circuit comprises a
plurality of feeding points disposed to be symmetrical with respect
to a central line of said discharge electrode.
56. An apparatus according to claim 47, wherein said discharge
electrode has the shape of a circular plate, and said
high-frequency power-supply circuit comprises a plurality of
feeding points disposed to be symmetrical with respect to a central
point of said discharge electrode.
57. A semiconductor device fabrication apparatus comprising: a
chamber; a substrate mounting table for holding a substrate in said
chamber; a discharge electrode opposed to said substrate on said
substrate table in said chamber; exhaust means for evacuating said
chamber; gas supply means for supplying a process gas into said
chamber; a high-frequency power-supply circuit for supplying
high-frequency power to said discharge electrode; and control means
for controlling power supply from said high-frequency power-supply
circuit to said discharge electrode such that an envelope
representing the spatial distribution of a high-frequency voltage
.phi. on said discharge electrode changes each hour in accordance
with a function containing time as a parameter, wherein said gas
supply means supplies a film deposition gas into said chamber, and
said control means controls the supply of high-frequency power from
said high-frequency power-supply circuit to said discharge
electrode, thereby generating a discharge plasma of the film
deposition gas between said discharge electrode and said substrate,
with substantially no standing wave of the high-frequency voltage
.phi. generated on said discharge electrode.
58. A semiconductor device fabrication apparatus comprising: a
chamber; a substrate mounting table for holding a substrate in said
chamber; a discharge electrode opposed to said substrate on said
substrate table in said chamber; exhaust means for evacuating said
chamber; gas supply means for supplying an etching gas into said
chamber; a high-frequency power-supply circuit for supplying
high-frequency power to said discharge electrode; and control means
for controlling power supply from said high-frequency power-supply
circuit to said discharge electrode such that an envelope
representing the spatial distribution of a high-frequency voltage
.phi. on said discharge electrode changes each hour in accordance
with a function including time as a parameter, wherein said gas
supply means supplies an etching gas into said chamber, and said
control means controls the supply of high-frequency power from said
high-frequency power-supply circuit to said discharge electrode,
thereby generating a discharge plasma of the etching gas between
said discharge electrode and said substrate, with substantially no
standing wave of the high-frequency voltage .phi. generated on said
discharge electrode.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Applications No.
2000-069044, filed Mar. 13, 2000; and No. 2000-085281, filed Mar.
24, 2000, the entire contents of which are incorporated herein by
reference.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a discharge plasma
generating method, discharge plasma generating apparatus,
semiconductor device fabrication method, and semiconductor device
fabrication apparatus used in the deposition of thin films of
semiconductors such as amorphous silicon, nanocrystalline silicon,
polycrystalline silicon, and silicon nitride for use in various
electronic devices such as an amorphous Si-based solar cell, a
thin-film polycrystalline Si-based solar cell, an LCD (liquid
crystal display), a thin-film transistor of a flat panel display, a
photosensitive body of a copying machine, and an information
recording device, or used in the etching of thin films of
semiconductor elements.
[0003] The surface processing technologies using a discharge plasma
of a reactive gas are being more and more demanded to increase the
area and processing speed in the fabrication of diverse electronic
devices every year. To meet these needs, research and development
are recently being extensively made, not only in the industrial
world but also in learned societies, particularly for the use of
plasma chemical vapor deposition (to be referred to as PCVD
hereinafter) and a very-high-frequency (VHF) power supply having a
frequency of 30 to 800 MHz.
[0004] Apparatuses and methods of generating a discharge plasma of
a reactive gas are disclosed in Jpn. Pat. Appln. KOKAI Publication
No. 8-325759 (to be referred to as reference 1 hereinafter) and L.
Sansonnens et al., "A voltage uniformity study in large-area
reactors for RF plasma deposition", Plasma Source Sci. Technol.
6(1997), pp. 170-178 (to be referred to as reference 2
hereinafter).
[0005] Unfortunately, the conventional PCVD and plasma etching have
the following problems.
[0006] (1) The first problem is an increased size of a substrate to
be processed. Needs for large-sized solar cells and flat panel
display LCDs are increasing. When an amorphous silicon film (to be
referred to as an a-Si film hereinafter) is formed on a 50
cm.times.50 cm substrate by the conventional PCVD method, the film
thickness distribution is, e.g., as shown in FIG. 6A. Also, when an
a-Si film is formed on a 100 cm.times.100 cm substrate by the
conventional method, the film thickness distribution is, e.g., as
shown in FIG. 6B. As shown in FIGS. 6A and 6B, as the frequency of
a high-frequency power supply increases, the film thickness
distribution of an a-Si film increases, so the film thickness
uniformity significantly lowers. In the field of LCDs, a film
thickness distribution of .+-.5% is permitted. In the field of
solar cells, a film thickness distribution of a maximum of .+-.20%,
preferably .+-.10% is permitted. Accordingly, when such large-sized
substrates are used in the conventional PCVD method, the only
practical power-supply frequency is 13.56 MHz, and no VHFs in a
frequency band exceeding this frequency are practical.
[0007] (2) The second problem is a method of increasing the surface
processing speed (improving the productivity) and improving the
film quality. To increase the speed of surface processing, the
discharge plasma density must be increased. As a method of
increasing the discharge plasma density, the use of a VHF in a
frequency band exceeding a versatile power-supply frequency of
13.56 MHz is recommended. Also, to improve the film quality, ion
damage to a film must be reduced. To this end, reducing the plasma
potential related to the ion energy is effective. The use of a VHF
which reduces the plasma potential is also recommended for this
purpose.
[0008] As examples of needs for a high surface processing speed,
low cost (a high film formation speed and a large area) and high
quality (a low defect density and high crystallinity) are demanded
in the formation of thin films for solar cells and thin-film
transistors for flat panel displays. Mat. Res. Soc. Symp. Proc.
Vol. 424, p. 9, 1997 (to be referred to as reference 3 hereinafter)
disclosed a method of increasing the film formation speed and
improving the quality of films by using a VHF power supply. A VHF
is recently found to be suited to the high-speed, high-quality
formation of particularly a thin nanocrystalline Si film which is
attracting attention as a new thin film replacing an a-Si film.
[0009] When a VHF is used, however, a VHF progressive wave Al
propagating in the forward direction on an electrode and a VHF
reflected wave A2 propagating in the opposite direction interfere
with each other as shown in FIG. 2A, generating a standing wave A3
as shown in FIG. 2B. This standing wave A3 promotes the spatial
nonuniformity of the discharge plasma density, thereby increasing
the film thickness distribution of a thin film formed on a
substrate 804. This is contrary to the need described in item (1)
above.
[0010] Other causes which promote the film thickness nonuniformity
resulting from this standing wave are as follows.
[0011] (a) The first cause is an increase and nonuniformity of the
impedance of a propagation path resulting from the skin effect.
When a VHF is supplied from a power supply 807 to an electrode 802
via feeding point (feeder distribution center) 809, 809a, and 809b
as shown in FIGS. 1A and 1B, the skin effect causes this VHF to
propagate, along the surface portion of the electrode 802, as the
progressive wave Al in one direction and the progressive wave A2 in
the other direction on the electrode surface as shown in FIG. 2A.
This interference generates the standing wave as shown in FIG. 2B.
This skin effect appears more notably for a VHF than for a
versatile frequency of 13.56 MHz as a high frequency. A surface
depth .delta. at which a current flows by this skin effect is given
by
.delta.=(3.14.times.f.multidot..mu..multidot..sigma.).sup.-0.5
[0012] where f is the frequency, .mu. is the permeability, and
.sigma. is the conductivity.
[0013] When the electrode 802 is copper, for example, its surface
depth is about 19 .mu.m for a frequency of 13.56 MHz as a high
frequency, about 10 .mu.m for a VHF of 50 to 60 MHz, and about 5.8
.mu.m for a VHF of 150 MHz. Therefore, in PCVD or plasma etching
using a VHF, the impedance of a power-supply propagation path from
a power supply to a discharge portion of a discharge electrode
increases. This increases the impedance and makes voltage
distribution nonuniform. Accordingly, the spatial uniformity of the
discharge plasma density cannot be held any longer.
[0014] (b) The second cause is mutual interference between a plasma
and VHF. When a VHF becomes nonuniform as described above, the
plasma distribution becomes nonuniform accordingly, thereby
producing a load distribution (the impedance lowers as the plasma
density rises) to an electrode. This influences the VHF
distribution.
[0015] As described above, the discharge plasma density becomes
nonuniform owing to the generation of a standing wave by a
reflected wave from the electrode end, the influence which the
presence of the electrode impedance has on the voltage
distribution, and the mutual interference between a plasma and VHF.
Consequently, the film thickness uniformity suffers in large-area
PCVD using a VHF.
[0016] For example, when the dimensions of a parallel plate
electrode exceed 30 cm.times.30 cm or the VHF frequency exceeds 30
MHz, the influence of the standing wave A3 becomes conspicuous.
This makes it difficult to achieve the minimum necessary film
thickness uniformity of semiconductor devices.
[0017] FIG. 3 is a graph showing a voltage distribution and an ion
saturation current distribution by plotting the position (cm) on a
discharge electrode on the abscissa and a voltage Vpp (V) and ion
saturation current on the ordinate. This data is obtained by the
conventional method which uses a VHF of 100 MHz. Referring to FIG.
3, a characteristic curve B1 indicates the voltage distribution,
and a characteristic curve B2 indicates the ion saturation current
distribution. This ion saturation current distribution (B2) is
substantially equal to the electron density distribution and can be
easily measured. Hence, the ion saturation current distribution is
generally used as an index of the discharge plasma density
distribution. The voltage distribution (B1) shows that the standing
wave A3 is generated on the electrode and the ion saturation
current distribution, i.e., the plasma distribution becomes
nonuniform accordingly.
[0018] On the other hand, in Jpn. Pat. Appln. KOKAI Publication No.
11-111622 (a four-point feeding method: to be referred to as
reference 4 hereinafter), the generation of the voltage
distribution caused by the standing wave A3 is suppressed by
feeding power to four different portions of a ladder electrode. A
ladder electrode is formed by assembling a plurality of parallel
longitudinal electrode rods 304 and one or more pairs of parallel
lateral electrode rods into the form of a lattice. This ladder
electrode is assumed to be more uniform than a common parallel
plate electrode. In the method of reference 4, the standing wave
generation suppressing means as described above is added to this
ladder electrode. However, if the electrode dimensions exceed 30
cm.times.30 cm or the power-supply frequency exceeds 80 MHz, the
effect of preventing the generation of a voltage distribution is
substantially lost. This makes it difficult to form a film having a
uniform thickness on a large-area substrate.
[0019] FIG. 4 is a graph showing voltage distributions by plotting
the position (cm) on a ladder electrode on the abscissa and the
voltage Vpp (V) on the ordinate. This data shows voltage
distributions generated in a certain electrode rod on the ladder
electrode when power is fed via four points by the conventional
method by using VHFs of 60 and 100 MHz. Referring to FIG. 4, a
characteristic curve C1 indicates data obtained when a VHF of 60
MHZ is used, and a characteristic curve C2 indicates data obtained
when a VHF of 100 MHz is used. Although a relatively uniform
voltage distribution is obtained at a frequency of 60 MHz (the
characteristic curve C1), a nonuniform voltage distribution is
obtained at a frequency of 100 MHz (the characteristic curve C2).
Also, in the method of this reference 4, optimum positions of the
four feeding points must be found by trial and error, and this
requires much labor and time. Furthermore, if the film formation
conditions such as the gas pressure and high-frequency power
change, the optimum positions of the feeding points also
change.
[0020] The above problems are also noted in learned societies. Mat.
Res. Soc. Symp. Proc. Vol. 377, p. 27, 1995 (to be referred to as
reference 5 hereinafter) has proposed a method in which a lossless
reactance (coil) is connected to the side away from the feeding
side of a parallel plate electrode. In the method of this reference
5, the conditions of reflection of a progressive wave from the
electrode end are changed to generate a portion in which the
distribution is relatively flat in the waveform of the standing
wave A3, e.g., an antinode portion (a portion near the peak of a
sine wave) on the electrode, thereby decreasing the voltage
distribution in the electrode. However, the method of reference 5
does not do away with the standing wave 3 all together but merely
generates a flat portion of a sine wave on the electrode.
Therefore, a uniform portion is obtained up to at most about 1/8
the wavelength (0.6 m for 60 MHz, and 0.4 m for 100 MHz).
Uniformization within a range exceeding this is in principle
impossible. The standing wave A3 shown in FIG. 2B has four nodes
and four antinodes. A standing wave like this cannot be
uniformized. The method is effective only in a case as indicated by
B1 in FIG. 3, in which the length is equal to or smaller than a
pair of one node and one antinode.
[0021] FIG. 5 is a graph showing a voltage distribution by plotting
the position (cm) on a ladder electrode on the abscissa and the
voltage Vpp (V) on the ordinate. Referring to FIG. 5, a
characteristic curve D indicates data showing a voltage
distribution when one end of a parallel plate electrode is
terminated by a lossless reactance (coil) at a VHF of 100 MHz. As
shown in FIG. 5, the voltage in a region from the end of the
electrode to about 30 cm can be made substantially uniform.
However, the voltage becomes nonuniform in a region larger than
this, so this region cannot be used in film formation.
[0022] As described above, when a VHF is used in the conventional
PCVD method, it is impossible to generate a uniform discharge
plasma in a large area and perform uniform processing if a very
large substrate exceeding 1 m.times.1 m is processed at 60 MHz or
if a 30 cm.times.30 cm substrate is processed at a frequency
exceeding 80 MHz.
[0023] M. Noisan, J. Pelletier, ed., "Microwave Excited Plasmas",
Technology, 4, second impression, p. 401, Elsevier Science B.V.,
1999 (to be referred to as reference 6 hereinafter) disclosed a
technique which supplies two different high-frequency waves to two
discharge electrodes. This technique of reference 6 uses one
high-frequency wave to generate a discharge plasma and the other
high-frequency wave to control the surface bias voltage of a
substrate, thereby controlling the amount of active ions flowing
into the substrate and the amount of energy incident on the
substrate. That is, the purpose of this technique is not to
uniformize a plasma when a large-size substrate exceeding 1
m.times.1 m is processed.
BRIEF SUMMARY OF THE INVENTION
[0024] It is an object of the present invention to provide a
discharge plasma generating method, discharge plasma generating
apparatus, semiconductor device fabrication method, and
semiconductor device fabrication apparatus which can generate a
uniform discharge plasma in a large area by using a very high
frequency (VHF) and can uniformly process a large substrate.
[0025] The first subject of the present invention is to eliminate
the generation of a standing wave on an electrode in principle and
uniformize the voltage distribution on the electrode while a plasma
is generated, thereby improving the uniformity (in-plane
uniformity) of the film formation rate or etching rate on the
surface of a substrate. As described earlier, it is very difficult
for the conventional method to make the voltage distribution
uniform if the electrode size exceeds 1/8 of a high-frequency
wavelength. For example, when a high frequency of 60 MHz is applied
to an electrode having dimensions exceeding 1 m.times.1 m, a
standing wave significantly appears to make the voltage
distribution extremely nonuniform. Also, when a VHF exceeding 80
MHz is applied to a 30 cm.times.30 cm electrode, a standing wave
significantly appears to make the voltage distribution very
nonuniform.
[0026] The plasma density becomes nonuniform at a VHF probably by
{circle over (1)} the generation of a standing wave on an
electrode, {circle over (2)} the influence of the presence of
floating impedance on the voltage distribution, and {circle over
(3)} the mutual interference between a plasma and high-frequency
wave. The present inventors made extensive studies on these
problems and have found that {circle over (1)} the generation of a
standing wave on an electrode is the main cause. On the basis of
this knowledge, the present inventors have completed the present
invention.
[0027] The present invention will be simply described below for the
sake of easy understanding.
[0028] Assume that a phenomenon on two-dimensional electrode is
simplified to a phenomenon on one-dimensional electrode and two
frequencies are supplied from the two ends of one rod electrode
(corresponding to one electrode rod of a ladder electrode). Assume
also that the attenuation of the two high-frequency waves is
neglected and the reflection at the electrode end is negligibly
small. Under the simplified conditions, the high-frequency waves
(voltages (.phi.(V))) supplied from the two ends of the rod
electrode are given by
.phi..sub.1=cos(.omega..sub.1t-k.sub.1z+.theta.1) (1)
.phi..sub.2=cos(.omega..sub.2t-k.sub.2z+.phi.2) (2)
[0029] where .omega., k, t, z, and .theta. are the angular
frequency (rad/sec), wave number (rad/m), time (sec), position (m),
and phase angle (rad), respectively, of each wave.
[0030] The wave number k is represented using a phase velocity v
(m/sec) and the angular frequency .omega. by
k.sub.1=.omega..sub.1/v.sub.1, k.sub.2=.omega..sub.2/v.sub.2
(3)
[0031] A high-frequency voltage .phi. at each time in each point
(portion) on the electrode is given as the sum of equations (1) and
(2) by as follows:
.phi.=.phi..sub.1+.phi..sub.2
=cos(.omega..sub.1t-k.sub.1z+.theta..sub.1)+cos(.omega..sub.2t-k.sub.2z+.t-
heta..sub.2)
=2
cos(.omega..sub.avet-k.sub.modz+.theta..sub.ave).multidot.cos(.omega..s-
ub.modt-k.sub.avez+.theta..sub.mod) (4)
[0032] The individual components in the equation are as
follows:
[0033] .omega..sub.ave=(.omega..sub.1+.omega..sub.2)/2,
[0034] k.sub.ave=(k.sub.1+k.sub.2)/2,
[0035] .theta..sub.ave=(.theta..sub.1+.theta..sub.2)/2,
[0036] .omega..sub.mod=(.omega..sub.1-.omega..sub.2)/2,
[0037] k.sub.mod=(k.sub.1-k.sub.2)/2,
[0038] k.sub.mod=(.theta..sub.1-.theta..sub.2)/2,
[0039] In equation (4) above, the term
cos(.omega..sub.avet-k.sub.modz+.th- eta..sub.ave) corresponds to a
carrier wave, and the term
cos(.omega..sub.modt-k.sub.avez+.theta..sub.mod) corresponds to an
envelope.
[0040] An "envelope" is a curve formed by tracing and jointing the
peaks of a modulated high-frequency wave. More specifically, when a
high-frequency wave .phi..sub.1 shown in FIG. 7A and a
high-frequency wave .phi..sub.2 shown in FIG. 7B are synthesized, a
synthetic wave .phi. shown in FIG. 7C results. This synthetic wave
.phi. is represented by equation (4) above, and its component
cos(.omega..sub.modt-k.sub.avez+.th- eta..sub.mod) is the
envelope.
[0041] First, assume that .omega..sub.1=.omega..sub.2 and
.theta..sub.mod is constant with time (.theta..sub.mod(t)=const.),
i.e., assume that high-frequency waves having the same frequency
and a phase difference which does not change with time are supplied
from the two ends. This is equivalent to supplying high-frequency
.omega..sub.1 power by dividing it into two portions from a single
power supply or to operating a plurality of high-frequency power
supplies in synchronism with each other by a high frequency from a
single oscillator and supplying their outputs. That is, this case
corresponds to the conventional method. When this is the case, the
high-frequency voltage .phi. on the electrode is represented by
.phi.=2
cos(.omega..sub.1t+.theta..sub.ave).multidot.cos(-.omega..sub.1/v.-
sub.1.multidot.z+.theta..sub.mod) (5)
[0042] This equation (5) shows that a high frequency having a
carrier wave cos(.omega..sub.1t+.theta..sub.ave) with the angular
frequency .omega..sub.1 and an envelope
cos(-.omega..sub.1/v.sub.1.multidot.z+.thet- a..sub.mod) exist on
the electrode. The carrier wave dominates a temporal change in the
voltage at a certain point, and the envelope dominates the spatial
distribution of the voltage. Since .omega..sub.1=.omega..sub.2 and
.theta..sub.mod(t)=const, the envelope
cos(-.omega..sub.1/v.sub.1.mul- tidot.z+.theta..sub.mod) does not
change with time and as a consequence becomes a standing wave.
[0043] This can be simply explained as follows.
[0044] FIG. 2A is a graph for explaining a standing wave generated
when the two output high frequencies from a two-output
phase-variable high-frequency oscillator are supplied to an
electrode while the phase difference between the frequencies is
held at a constant value (.theta..sub.mod(t)=const). Referring to
FIG. 2A, the waveform of a high frequency A1 indicates a
progressive wave of the first power, which is represented by
equation (1), and a high frequency A2 indicates a progressive wave
of the second power, which is represented by equation (2). FIG. 2B
is a graph showing the power distribution of a standing wave by
plotting the position on the electrode surface on the abscissa and
the square of the envelope term
cos(-.omega..sub.1/v.sub.1.multidot.z+const.) of equation (5) on
the ordinate. When the phase difference between the two output
high-frequency power components is fixed to a constant value
(.theta..sub.mod(t)=const, e.g., 0.degree.), these power components
are synthesized to form a standing wave as shown in FIG. 2B. This
standing wave is the cause of a spatial voltage distribution, i.e.,
a plasma distribution, and a film deposition distribution in the
conventional feeding method.
[0045] On the other hand, if the envelope does not stay as a
standing wave but moves with time, the generation of a standing
wave is suppressed. This is the gist of the present invention. Two
examples will be presented below.
[0046] (a) When .omega..sub.1.noteq..omega..sub.2 (a method of
supplying high-frequency waves of different frequencies)
[0047] When two frequencies are different
(.omega..sub.1.noteq..omega..sub- .2), a high-frequency voltage
.phi. at each point at each time is calculated by
.phi.=2
cos(.omega..sub.avet-k.sub.modz+.theta..sub.ave).multidot.cos(.ome-
ga..sub.modt-k.sub.avez+.theta..sub.mod) (6)
[0048] From equation (6) above, this high-frequency voltage .phi.
contains a carrier wave
cos(.omega..sub.avet-k.sub.modz+.theta..sub.ave) having an angular
frequency .omega..sub.ave and an envelope cos(.omega..sub.modt-k.-
sub.avez+.theta..sub.mod) having an angular frequency
.omega..sub.mod which is generally called "beat" or "hum". Since
the envelope includes a term .omega..sub.modt which changes with
time, this envelope moves with the passing of time, so no standing
wave is generated. This is the first best mode of the present
invention.
[0049] (b) When .omega..sub.1=.omega..sub.2 and
.theta..sub.mod(t).noteq.c- onst. (a method of supplying
high-frequency waves having the same frequency by temporally
changing the phase difference).
[0050] When frequencies are the same (.omega..sub.1=.omega..sub.2)
and the phase difference .theta..sub.mod changes in a split second
(at all times) (.theta..sub.mod(t).noteq.const.), a high-frequency
voltage .phi. at each point at each time is calculated by
.phi.=2
cos(.omega..sub.1t+.theta..sub.ave)cos(-.omega..sub.1/v.sub.1.mult-
idot.z+.theta..sub.mod(t)) (7)
[0051] In equation (7) above, the envelope is
cos(-.omega..sub.1/v.sub.1z+- .theta..sub.mod(t)), i.e., includes a
term .theta..sub.mod(t) which changes with time. Accordingly, this
envelope moves with the passing of time, and no standing wave is
generated. This is the second best mode of the present
invention.
[0052] When the envelope is in a split second (at all times)
changed as indicated by items (a) and (b) above, no standing wave
is generated on an electrode, so a uniform plasma can be
generated.
[0053] Note that the conditions of
.omega..sub.1.noteq..omega..sub.2 (the method of supplying
high-frequency waves of different frequencies) and
.omega..sub.1=.omega..sub.2 and .theta..sub.mod(t).noteq.const.
(the method of supplying high-frequency waves having the same
frequency by changing the phase difference) need not be
intentionally made. These conditions can be simply realized by the
use of two independent high-frequency oscillators. That is, even
two high-frequency oscillators set to oscillate the same VHF, e.g.,
100 MHz have characteristics unique to the individual oscillators.
Hence, actual oscillation frequencies slightly deviate from the set
frequency (100 MHz). For example, the first oscillation frequency
is 100.001 MHz and the second oscillation frequency is 100.003 MHz,
i.e., .omega..sub.1.noteq..omega..sub.2 holds in a strict sense.
Also, frequencies change with temperature variation and the like,
so the relationships between frequencies and between phases change
at random. Therefore, when a plurality of independent
high-frequency oscillators are used, the envelope moves with time,
and no standing wave is generated.
[0054] Another method of changing the envelope is to change
frequency with time (FM modulation: frequency modulation), perform
chirp (frequency chirp), or change an amplitude with time (AM
modulation: amplitude modulation).
[0055] In the formation of a large-area uniform film performed by a
plasma by using a high-frequency wave on the basis of this
principle, even when the electrode size exceeds 1/8 of the
high-frequency wavelength, in which case uniformization is
conventionally very difficult, i.e., even for an apparatus for
processing a very large substrate exceeding 1 m.times.1 m at a high
frequency of, e.g., 60 MHz, the present invention provides a method
of feeding power to a discharge electrode, by which a high
frequency is supplied to the electrode such that the envelope
function of a high-frequency voltage .phi. on the electrode
temporally changes, thereby performing high-speed, high-quality
film formation as the characteristic of a high-frequency wave and
at the same time generating a uniform plasma and forming a uniform
film by suppressing the generation of a standing wave on the
electrode.
[0056] This temporal change of the envelope function is realized by
the use of a plurality of high-frequency power supplies.
[0057] First, case (a) in which .omega..sub.1.noteq..omega..sub.2
(the method of supplying high-frequency waves having different
frequencies) will be explained.
[0058] As practical means of supplying two frequencies
(.omega..sub.1.noteq..omega..sub.2) to an electrode, two
independent high-frequency power supplies are used. For example, in
two power supplies (containing high-frequency oscillators) having a
rated frequency of 60 MHz, each oscillator has an oscillation
frequency unique to the oscillator. In practice, therefore, a
frequency difference of about a few hundred kHz exists between the
two oscillators. This difference between the inherent oscillation
frequencies allows .omega..sub.1.noteq..omega..s- ub.2 to hold in
practice.
[0059] Alternatively, to avoid the contingency as described above,
a plurality of power supplies having two oscillation frequencies
positively made different from each other are used.
[0060] If the difference between the frequencies of these
high-frequency power supplies is made too large and one frequency
largely deviates from an optimum frequency, the properties of film
formation and etching significantly lower from the properties of
the optimum frequency. To prevent this, the frequency difference is
set to 20% or less.
[0061] Case (b) described above in which
.omega..sub.1=.omega..sub.2 and .theta..sub.mod(t).noteq.const.
(the method of supplying high-frequency waves having the same
frequency by temporally changing the phase difference) will be
explained below.
[0062] In this method, power is fed to a discharge electrode via a
plurality of feeding points, and the difference between a phase to
one feeder distribution center and at least one phase to another is
temporally changed. It is more preferable to use a phase shifter as
a means for temporally changing the phase difference. This phase
shifter is preferably inserted between an oscillator for
determining the oscillation frequency of high-frequency power and
an amplifier for amplifying the signal to necessary power.
[0063] To suppress a standing wave by using a plurality of power
supplies, the one-dimensional modeling mentioned earlier must
apply. As one practical condition, a plurality of feeding points of
a discharge electrode are desirably arranged in symmetrical
positions.
[0064] Also, when independent power supplies are used, the
difference between VHFs does not stabilize to raise the problem of
reproducibility in some cases. Therefore, it is desirable to ensure
reproducibility by controlling the VHF difference to a constant
value.
[0065] Furthermore, an isolator is preferably inserted between an
impedance matching circuit and a power supply. This isolator
reduces input power to the power supply from another power supply
and thereby protects this power supply. The impedance matching
circuit matches the impedances of a discharge electrode and the
power supply.
[0066] The frequency band width of a practical isolator is about 4%
for a high-frequency power of 1 kW or less and about 1% for a
high-frequency power of about 2 kW. To build a system within this
range, therefore, the difference between the frequencies of a
plurality of high-frequency power supplies is preferably 4% or
less, and more preferably, 1% or less of the average frequency.
[0067] Also, in accordance with the magnitude of input
high-frequency power to each power supply from the discharge
electrode side, the output from another power supply is restricted
to reduce input power from this power supply. This prevents a VHF
having a different frequency and/or phase from entering the former
power supply and thereby prevents damage to the power supply.
[0068] To suppress a standing wave by using a plurality of power
supplies, high-frequency waves having a plurality of frequencies
are supplied from one feeder distribution center. This allows
building a system more inexpensively than when the high-frequency
waves are supplied from different feeding points. For this purpose,
high-frequency power components from a plurality of high-frequency
power supplies are mixed by a high-frequency mixer and supplied to
a discharge electrode.
[0069] As a means for temporally changing the envelope function,
different from the method using two frequencies or a temporally
changing phase difference, it is possible to temporally change the
voltage amplitude of high-frequency power (AM modulation),
temporally change the frequency of high-frequency power (FM
modulation), or perform frequency chirp.
[0070] It is favorable to previously measure at least one of a
voltage distribution, plasma generation density distribution,
radical generation density distribution, film formation
distribution, etching distribution, and semiconductor film
characteristic distribution with respect to the difference between
a plurality of frequencies, the value of each frequency, the
difference between phases, or the range of AM modulation, FM
modulation, or frequency chirp, and obtain a necessary uniform
distribution on the basis of the measurement result by using time
average or time integral by adjusting at least one of the time,
period, and frequency of power supply with respect to the
difference between the specific frequencies, the value of each
frequency, the difference between phases, or the range of AM
modulation, FM modulation, or frequency chirp.
[0071] Since the envelope distribution of this system changes with
time, nodes and antinodes move to turn on/off a plasma. This should
not have any influence on the speed and quality of processing by
the plasma as an object. Hence, the plasma must keep being ON in a
pseudo manner. For this purpose, the cycle of plasma ON/OFF
resulting from temporal change in the envelope distribution, i.e.,
a cycle equivalent to the reciprocal of the difference between the
frequencies of a plurality of high-frequency power components, a
cycle for changing the phase, or the cycle of AM modulation, FM
modulation, or frequency chirp is made shorter than, preferably 1/2
or less the extinction life of an active atom, active molecule, or
ion in a discharge plasma. This prevents the discharge plasma from
uselessly repeating ON/OFF, so the speed and quality of processing
are not influenced.
[0072] To keep the plasma ON state in a pseudo manner, the above
cycle is determined as follows when a thin silicon film is to be
formed by using silane.
[0073] Let .tau. denote the life of an SiH.sub.3 active molecule
calculated by
.tau.=(.DELTA.x).sup.2/(2D) (8)
[0074] where D is a diffusion coefficient
[0075] (D=2.5.times.10.sup.3 (cm.sup.2s.sup.1-)), and .DELTA.x is
the distance (cm) from an electrode to a substrate.
[0076] The cycle described above is made shorter than one or both
of the life .tau. and the life of 1.1.times.10.sup.-4 sec of a
hydrogen atom radical. More specifically, the cycle is preferably
1/2 or less the life z or the life of 1.1.times.10.sup.-4 of a
hydrogen atom radical.
[0077] On the other hand, for an application in which active atoms,
active molecules, or ions in a plasma start to be generated in an
OFF time after the plasma is generated, e.g., for an application to
etching, it is possible to delay the cycle to intentionally form a
plasma OFF time to hold an enough OFF time to generate active
atoms, active molecules, or ions in the plasma, turn on the next
plasma before the active atoms, active molecules, or ions in the
former plasma reduce, and turn off the latter plasma, thereby
efficiently generating the active atoms, active molecules, or ions.
To this end, the cycle of plasma ON/OFF caused by a temporal change
in the envelope distribution is made longer than and 10 times or
less, preferably 2 to 4 times the generation life of active atoms,
active molecules, or ions in a plasma to be generated by the
discharge electrode.
[0078] Also, the particle generation amount is reduced by setting
the cycle to 1 sec or less, preferably 1 msec or less.
[0079] Alternatively, the particle generation amount is reduced by
making the cycle longer than, preferably twice or more a discharge
region dwell time t of a source gas calculated by
t.apprxeq.(S.multidot..DELTA.x)/Q (9)
[0080] where S is the substrate area (cm.sup.2)
[0081] .DELTA.x is the distance (cm) from the discharge
[0082] electrode to the substrate
[0083] Q is the volume flow rate (cm.sup.3/sec)
[0084] One desirable practical condition by which the
one-dimensional modeling described above simply applies is that the
discharge electrode is a ladder electrode or a mesh electrode.
[0085] Furthermore, to supply to a substrate electrode
high-frequency power which is one of two frequencies for
maintaining uniformity and which adjusts the energy of ions
incident on the substrate, high-frequency power components are
supplied from two or more high-frequency power supplies to each of
a discharge electrode having a substrate and a discharge electrode
having no substrate.
[0086] The discharge electrode preferably has dimensions of
500.times.500 mm or more, more preferably in the range of
500.times.500 mm to 2,200.times.2,200 mm, and most preferably in
the range of 500.times.500 mm to 1,600 to 1,600 mm.
[0087] A substrate to be processed can be made of a glass, metal,
or resin material. When the substrate is made of glass, the
substrate is preferably heated to the temperature of range between
80.degree. C. and 350.degree. C. in plasma processing. Examples of
the glass include soda-lime glass and silica glass. When the
substrate is made of a metal, the substrate is preferably heated to
the temperature of range between 80.degree. C. and 500.degree. C.
in plasma processing. Examples of the metal include various kinds
of stainless steel, aluminum, and an aluminum alloy. When the
substrate is made of a resin, the substrate is preferably heated to
the temperature of range between 80.degree. C. and 200.degree. C.
in plasma processing. Examples of the resin include polyimide and
polyethylene terephthalate (PET).
[0088] Additional objects and advantages of the invention will be
set forth in the description which follows, and in part will be
obvious from the description, or may be learned by practice of the
invention. The objects and advantages of the invention may be
realized and obtained by means of the instrumentalities and
combinations particularly pointed out hereinafter.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0089] The accompanying drawings, which are incorporated in and
constitute a part of the specification, illustrate presently
preferred embodiments of the invention, and together with the
general description given above and the detailed description of the
preferred embodiments given below, serve to explain the principles
of the invention.
[0090] FIG. 1A is a schematic view for explaining the flow of a
high-frequency current when power is fed to an electrode by a
conventional method, and
[0091] FIG. 1B is a schematic view for explaining the flow of a
high-frequency current when power is fed to an electrode by another
conventional method;
[0092] FIGS. 2A and 2B are graphs for explaining a standing wave
generated when two output high frequencies from two-output
variable-phase high-frequency oscillator are fed with a phase
difference of 0.degree. to an electrode by a conventional
method;
[0093] FIG. 3 is a graph showing a voltage distribution and an ion
saturation current distribution resulting from a standing wave
generated when a high frequency of 100 MHz is fed to one point of
an electrode;
[0094] FIG. 4 is a graph showing voltage distributions formed on a
ladder electrode when high frequencies of 60 and 100 MHz are fed to
the electrode by using a conventional four-point feeding
method;
[0095] FIG. 5 is a graph showing a voltage distribution formed on a
parallel plate electrode when a high-frequency power of 100 MHz is
fed to the electrode by a conventional feeding method with one end
of the electrode terminated by a lossless reactance (coil);
[0096] FIG. 6A is a graph showing the correlation between a film
thickness distribution and a power-supply frequency when a film is
formed on a substrate (500 mm.times.500 mm) by using a conventional
method, and FIG. 6B is a graph showing the correlation between a
film thickness distribution and a power-supply frequency when a
film is formed on a substrate (1,000 mm.times.1,000 mm) by using a
conventional method;
[0097] FIG. 7A is a view showing the waveform of a high-frequency
wave .phi..sub.1,
[0098] FIG. 7B is a view showing the waveform of a high-frequency
wave .omega..sub.2, and
[0099] FIG. 7C is a view showing the waveform and envelope of a
synthetic wave .phi.;
[0100] FIG. 8 is a plan block diagram showing a discharge plasma
generating apparatus according to the first embodiment of the
present invention;
[0101] FIG. 9 is a graph showing the result of measurement of the
emission intensity distribution of a plasma generated by a method
of the first embodiment;
[0102] FIGS. 10A to 10C are tree-dimensional graphs each showing
the distribution of the amplitude of a discharge electrode in the
lateral and longitudinal directions of the electrode;
[0103] FIG. 11A is a graph showing the correlation between the
distance from a feeder distribution center and a progressive wave
voltage amplitude index and the correlation between the position
from a reflection point and a reflected wave voltage amplitude
index,
[0104] FIG. 11B is a graph showing the correlation between the
distance from a feeder distribution center and a standing wave
voltage amplitude index, and
[0105] FIG. 11C is a graph showing the correlation between the
distance from one feeder distribution center, when power is
supplied from the two ends of an electrode, and a synthetic wave
voltage amplitude index;
[0106] FIG. 12 is a graph showing the correlation between a high
frequency and the distance from a feeder distribution center before
the high frequency attenuates to a certain value;
[0107] FIG. 13 is a graph showing the correlation between the
difference between two high frequencies and a film thickness
distribution (a film thickness variation);
[0108] FIG. 14 is a plan block diagram showing a discharge plasma
generating apparatus according to the second embodiment (or the
13th embodiment) of the present invention;
[0109] FIG. 15 is a block diagram showing a feeder circuit of an
apparatus used in a method of feeding power to a discharge
electrode according to the third embodiment of the present
invention;
[0110] FIG. 16 is an enlarged view of a portion where a feeding
terminal is attached to an electrode;
[0111] FIG. 17 is a sectional block diagram showing, in an enlarged
scale, the portion where the feeding terminal is attached to the
electrode;
[0112] FIG. 18 is a three-dimensional view showing a film formation
rate distribution with a phase difference of 0.degree.;
[0113] FIG. 19 is a three-dimensional view showing a film formation
rate distribution with a phase difference of 90.degree.;
[0114] FIG. 20 is a timing chart showing the control pattern of a
phase shifter phase difference for obtaining a uniform
distribution;
[0115] FIG. 21 is a plan block diagram showing a discharge plasma
generating apparatus according to the fourth embodiment of the
present invention;
[0116] FIG. 22 is a plan block diagram showing a discharge plasma
generating apparatus according to the fifth embodiment of the
present invention;
[0117] FIG. 23 is a block diagram showing a feeder circuit of a
discharge plasma generating apparatus according to the sixth
embodiment of the present invention;
[0118] FIG. 24 is a block diagram showing a feeder circuit of a
discharge plasma generating apparatus according to the seventh
embodiment of the present invention;
[0119] FIG. 25 is a block diagram showing a feeder circuit of a
discharge plasma generating apparatus according to the eighth
embodiment of the present invention;
[0120] FIG. 26A is a graph showing an example of a frequency
spectral distribution used to generate an arbitrary wavelength in
implementing a method (a two-frequency method) of applying two or
more high frequencies to the same electrode by using an arbitrary
waveform generator, and
[0121] FIG. 26B is a graph showing the envelope of a temporal
change in the voltage generated by the arbitrary waveform
generator, which is generated on the basis of the frequency
spectral distribution;
[0122] FIG. 27 is a plan block diagram showing a discharge plasma
generating apparatus according to the ninth embodiment of the
present invention;
[0123] FIG. 28 is a plan block diagram showing a discharge plasma
generating apparatus according to the 10th embodiment of the
present invention;
[0124] FIG. 29 is a sectional block diagram showing the apparatus
of the 10th embodiment;
[0125] FIG. 30 is a perspective block diagram showing the apparatus
of the 10th embodiment;
[0126] FIG. 31 is a block diagram showing a feeder circuit of a
discharge plasma generating apparatus according to the 11th
embodiment of the present invention;
[0127] FIG. 32 is a plan block diagram showing a discharge plasma
generating apparatus according to the 12th embodiment of the
present invention;
[0128] FIG. 33 is a plan block diagram showing a discharge plasma
generating apparatus according to the 14th embodiment of the
present invention;
[0129] FIG. 34 is a perspective block diagram showing a feeder
circuit of a discharge plasma generating apparatus according to the
15th embodiment of the present invention;
[0130] FIG. 35 is a sectional block diagram showing an outline of
an apparatus used in a method of Comparative Example 1;
[0131] FIG. 36 is a sectional block diagram showing an outline of
an apparatus used in a method of Comparative Example 2;
[0132] FIG. 37 is a perspective view showing a power distributor of
the apparatus shown in FIG. 36;
[0133] FIG. 38 is a sectional block diagram showing an outline of
an apparatus used in a method of Comparative Example 3; and
[0134] FIG. 39 is a plan view showing an outline of a discharge
electrode of the apparatus shown in FIG. 38 and a feeding
method.
DETAILED DESCRIPTION OF THE INVENTION
[0135] Various preferred embodiments of the present invention will
be described below with reference to the accompanying drawings.
[0136] (First Embodiment)
[0137] In the first embodiment, a high-frequency plasma CVD
apparatus 1A shown in FIG. 8 is used. This apparatus 1A includes a
reaction vessel 2, a ladder electrode (a discharge electrode) 303,
a ground electrode 3, two high-frequency power supplies 5a and 5b,
a gas supply unit 71, an exhaust unit 72, and a controller 73. The
reaction vessel 2 is made airtight, and a gas supply pipe 17 and an
exhaust pipe 18 open in appropriate portions of this vessel 2.
[0138] The gas supply pipe 17 communicates with the gas supply unit
71. The gas supply unit 71 incorporates a gas supply source and a
mass-flow controller. The gas supply source contains process gases
which contain film formation components. The process gases are,
e.g., an Si-containing gas such as monosilane or disilane and an
additive component gas such as hydrogen gas. The power switch of
the mass-flow controller is connected to an output portion of the
controller 73.
[0139] The exhaust pipe 18 communicates with the exhaust unit 72.
The exhaust unit 72 houses a vacuum pump and a device for making
toxic substances harmless. The power switch of the vacuum pump is
connected to the output portion of the controller 73. This vacuum
pump can reduce the internal pressure of the reaction vessel 2 to
less than about 1.times.10.sup.-6 Torr.
[0140] The ground electrode 3 and the ladder electrode 303 are
opposed with a clearance of, e.g., 20 mm between them. The ground
electrode 3 includes a mechanism (not shown) for holding a glass
substrate G to be processed and contains a heater (not shown) for
heating this substrate G. When the dimensions of the substrate G
are 2.0 m.times.1.4 m, the dimensions of the ground electrode 3 are
2.2 m.times.1.6 m. The gas supply pipe 17 preferably has a
plurality of gas inlet ports. These gas inlet ports are desirably
formed behind the ladder electrode 303 so as to form laminar flows
of the process gases.
[0141] The ladder electrode 303 is formed by assembling a plurality
of (e.g., 17) parallel longitudinal rods 304 and one or more pairs
of parallel lateral rods 305 into the form of a lattice. This
ladder electrode 303 is opposed parallel to the substrate G which
is held by the ground electrode 3. The longitudinal rods 304 are
arrayed at equal pitches in the Y-axis direction, and the lateral
rods 305 are arrayed at equal pitches in the X-axis direction. The
length in the X-axis direction of the ladder electrode 303 is about
2.2 m, and its length in the Y-axis direction is about 1.6 m.
[0142] The ladder electrode 303 has eight first feeding points 9a
and eight second feeding points 9b.sub.1. The first feeding points
9a are formed at nodes between the lateral rods 305 and the
longitudinal rods 304 on one side. The second feeding points
9b.sub.1 are formed at nodes between the lateral rods 305 and the
longitudinal rods 304 on the other side. These first and second
feeding points 9a and 9b.sub.1 are formed at substantially equal
pitches.
[0143] The first feeding points 9a are connected to a first
distributor 26a by coaxial cables 8b. To this first distributor
26a, an impedance matching circuit 7a, a power meter 6a, and the
first power supply 5a are connected in this order by a coaxial
cable 8a. The first power supply 5a contains a high-frequency
oscillator whose frequency is set to 60 MHz, and supplies VHF power
to the ladder electrode 303 via the eight first feeding points
9a.
[0144] The second feeding points 9b.sub.1 are connected to a second
distributor 26b via coaxial cables 8b. To this second distributor
26b, an impedance matching circuit 7b, a power meter 6b, and the
second power supply 5b are connected in this order. The second
power supply 5b is independent of the first power supply 5a and
houses a high-frequency oscillator whose frequency is also set to
60 MHz. This second power supply 5b supplies VHF power to the
ladder electrode 303 via the eight second feeding points
9b.sub.1.
[0145] When the actual frequencies of these two power supplies were
measured with a high-accuracy spectrum analyzer, the power supplies
5a and 5b output high frequencies of 59.8 MHz and 60.3 MHz,
respectively. The actual oscillation frequency usually thus
deviates from the set frequency, and this is because different
oscillators have different characteristics.
[0146] Accordingly, different VHFs of 59.8 MHz and 60.3 Hz are
supplied to the ladder electrode 303 from the two power supplies 5a
and 5b via the first and second feeding points 9a and 9b.sub.1
facing each other. In the present invention, the difference (0.5
MHz) between the two VHFs is important.
[0147] In this embodiment, the first and second feeding points 9a
and 9b.sub.1 were arranged symmetrically with respect to the
central line of the ladder 303, thereby generating a
one-dimensional voltage distribution on each of the longitudinal
rod 304. This caused a phenomenon (to be described later) which
moved an envelope at high speed. Consequently, it was possible to
uniformize the longitudinal plasma generation distribution on the
longitudinal rods 304 and the plasma generation distribution (a
plasma distribution in the X-axis direction) between the
longitudinal rods 304.
[0148] In this embodiment, the number of each set of feeding points
is eight (sixteen in total). However, the plasma generation
distribution in the X-axis direction (the longitudinal direction of
the electrode) can be further uniformized by increasing the number
of feeding points to twelve (twenty four in total) or to sixteen
(thirty two in total). The effects of the present invention are of
course found even when the number of feeding points is decreased to
six (twelve in total), five (ten in total), four (eight in total),
three (six in total), two (four in total), and one (two in
total).
[0149] Also, in this embodiment power components are fed to the
different feeding points from the two power supplies. However, the
discharge plasma density can be made more uniform by increasing the
number of power supplies. For example, the uniformity of the
discharge plasma density can be improved by supplying
high-frequency power components having different frequencies from
four power supplies to different feeding points.
[0150] FIG. 9 is a graph showing a characteristic curve E obtained
by measuring, with a CCD camera, the emission intensity of a plasma
generated by using the apparatus 1A of this embodiment. In FIG. 9,
a position index (an arbitrary value) on the ladder electrode is
plotted on the abscissa, and an emission intensity index (an
arbitrary value) is plotted on the ordinate. Referring to FIG. 9,
three low-value portions inside the substrate size are behind
structures of the apparatus, so the plasma in these portions cannot
be seen. Therefore, these portions have no connection with the
actual emission intensity distribution. This characteristic curve E
shows that in the generation of a discharge plasma using the
apparatus 1A, a uniformity of .+-.7% (a maximum value of 127/a
minimum value of 111) of an emission distribution, i.e., a plasma
distribution can be achieved in a very large region of 2
m.times.1.4 m.
[0151] The discharge plasma is thus uniformized because "hum
(beat)" resulting from 0.5 MHz as the difference between the first
VHF (59.8 MHz) and the second VHF (60.3 MHz) suppresses the
generation of a standing wave A3 on the electrode. That is, as
explained in item (a) in "BRIEF SUMMARY OF THE INVENTION", an
envelope is changed 0.5 million times for 1 sec, i.e., moved at
high speed over the distance of 500,000 wavelengths. Therefore,
although the envelope has a waveform similar to the standing wave
A3 for a very short time period, the amplitude of a voltage can be
regarded as having a uniform distribution on time average. So, a
plasma generated by this voltage has a substantially uniform
distribution. The amplitude of a voltage is the maximum value of
the voltage at a certain point.
[0152] This can also be considered as follows. Two high-frequency
waves supplied to the electrode, i.e., a high-frequency wave (to be
referred to as a high-frequency wave A hereinafter) supplied from
the power supply 5a via the eight first feeding points 9a and a
high-frequency wave (to be referred to as a high-frequency wave B
hereinafter) supplied from the power supply 5b via the eight second
feeding points 9b.sub.1 do not interfere with each other because
they have different frequencies. Therefore, the amplitude
distribution of the voltage of the high-frequency wave A and the
amplitude distribution of the voltage of the high-frequency wave B
are independent of each other. The actual voltage distribution is
the superposition of the two.
[0153] Assuming that the attenuation of a high-frequency wave can
be neglected and the reflection at the electrode end is negligibly
small, the high-frequency waves A and B uniformly progress with no
attenuation from the two ends of the longitudinal rods 304, so the
superposition of the two high-frequency waves forms a uniform
distribution. This is the gist of this embodiment.
[0154] In practice, however, the phenomenon is slightly complicated
because attenuation and reflection do occur, so these attenuation
and reflection will be described below. First, attenuation will be
explained. When attenuation occurs, the amplitude distribution of
the voltage of the high-frequency wave A is indicated by RI shown
in FIG. 10A. Referring to FIG. 10A, the direction of the lateral
rods 305 is the Y axis, the direction of the longitudinal rods 304
is the X axis, and the amplitude of the voltage is the Z axis. In
the direction (the Y axis) of the lateral rods 305, the voltage
amplitude is substantially constant because the eight feeding
points 9a are closely arranged. On the other hand, in the direction
(the X axis) of the longitudinal rods 304, the voltage amplitude
attenuates from the feeding side, and this produces a distribution.
As indicated by R2 shown in FIG. 10B, the amplitude of the voltage
of the high-frequency wave B also attenuates from the opposite
feeding side. As indicated by R3 in FIG. 10C, the distribution of
the amplitude of the voltage formed by synthesizing the
high-frequency waves A and B has high uniformity. Accordingly, a
plasma having a substantially uniform distribution density is
generated.
[0155] Since reflection at the electrode end cannot be neglected in
practice, this reflection at the electrode end will also be
explained in addition to the above attenuation. Referring to FIG.
11A, the distance (cm) from the feeding points in the direction of
the longitudinal rods 304 is plotted on the abscissa, and the
amplitude distribution of the voltage of the high-frequency wave A
is plotted on the ordinate. FIG. 11A does not show the distribution
in the direction of the lateral rods 305 because this distribution
is substantially uniform as indicated by R1 in FIG. 10A, and shows
only one-dimensional distribution in the Y-axis direction of the
longitudinal rods 304. A progressive wave G1 of the high-frequency
wave A progresses toward the electrode end while attenuating from
the feeding points. Since reflection occurs at the electrode end,
the high-frequency wave A is reflected at the electrode end to form
a reflected wave H, and this reflected wave H progresses to the
feeding points. FIG. 11B shows the amplitude distribution of a
voltage generated by the synthesis of the progressive wave G1 and
the reflected wave H. Since the progressive wave G1 and the
reflected wave H have the same frequency and interfere with each
other, addition taking account of the phase is necessary. A
synthetic wave G2 does not monotonously attenuate and has a
standing-wave-like distribution. FIG. 11B shows that a minimal
point is generated near 120 cm. The high-frequency wave B also
forms a similar distribution. Since the high-frequency waves A and
B have different frequencies and hence do not interfere with each
other, they can be simply synthesized by addition, and a
substantially uniform distribution as shown in FIG. 11C is
obtained. In this embodiment, a reflected wave H of a synthetic
wave G3 was small, resulting in a slight standing-wave-like
distribution. Therefore, a substantially uniform voltage
distribution was finally obtained, so a uniform plasma was
generated.
[0156] As described above, in this embodiment a substantially
uniform distribution was obtained because the reflected wave H was
small and had little influence. However, if a high-frequency wave
(e.g., the high-frequency wave A) fed from one end does not
attenuate before reaching the other end, a reflected wave generated
by the reflection of this high-frequency wave interferes with the
progressive wave. Since this makes the standing wave appreciably
large, no uniformity can be obtained any longer. Hence, a
high-frequency wave preferably sufficiently attenuates before
arriving at the other end. More specifically, when at the other end
of the electrode the voltage of a progressive wave attenuates to
about 50% of that at the feeding points, the reflected wave H
generated there becomes about 25% (=50%.times.1/2) as shown in FIG.
11A, so a substantially uniform voltage distribution is obtained.
If the voltage of a progressive wave attenuates to about 75%, the
film thickness distribution is not substantially affected although
a slight voltage distribution is formed.
[0157] Referring to FIG. 12, the abscissa indicates the VHF
frequency (MHz), and the ordinate indicates the distance (cm) from
the feeding points. A characteristic curve J shows the distance the
progressive-wave voltage attenuates to about 50%, which is
approximated by equation L=4.times.10.sup.3/f. A characteristic
curve K shows the distance the progressive-wave voltage attenuates
to about 75%, which is approximated by equation
L=2.times.10.sup.3/f. Accordingly, the length L of the electrode
from one end as a feeder distribution center (incident point) to
the other end as a reflection point satisfies preferably inequality
L.gtoreq.2.times.10.sup.3/f, and more preferably,
L.gtoreq.4.times.10.sup- .3/f. Within the range of equation
L>20.times.10.sup.3/f, attenuation is too large, and no
uniformization is possible. Therefore, L.ltoreq.20.times.10.sup.3/f
is preferably met.
[0158] Symbol f represents a VHF (MHz).
[0159] The frequency difference between the high-frequency waves A
and B will be described below by returning to the concept of
high-speed movement of an envelope. The larger this frequency
difference, the higher the speed at which an envelope is moved.
However, to obtain a desired film formation rate and film formation
quality, it is undesirable to use a high-frequency wave B with a
frequency having a difference of 20% or more from that of the
high-frequency wave A. Also, to allow an impedance matching circuit
to function which is used to prevent incidence of VHF power to a
power supply, the difference between the two VHFs is more
preferably 1% or less.
[0160] In this embodiment, the difference between the two VHFs was
about 0.8%. Therefore, the film formation rate and quality were
high, and incidence of a high-frequency wave to the power supply
could be suppressed to a low value, about 100 W.
[0161] The above apparatus 1A was used to form a thin Si
semiconductor film (an a-Si film or a nanocrystalline Si film) for
a solar cell on a glass substrate following the procedures
described below.
[0162] First, the temperature of the ground electrode 3 was set to
200.degree. C. by heating by the heater. 2 m.times.1.4 m substrate
G was placed on this ground electrode 3. SiH.sub.4 gas was supplied
at a flow rate of 2,000 sccm from the gas supply unit 71 into the
reaction vessel 2. In the case of nanocrystalline Si film
formation, hydrogen gas was supplied at, e.g., 50,000 sccm in
addition to the SiH.sub.4 gas. The operation of the exhaust unit 72
was controlled by the controller 3 to adjust the internal pressure
of the reaction vessel 2 to 200 mTorr.
[0163] While the first and second impedance matching circuits 7a
and 7b were so adjusted as to allow efficient supply of VHF power
to a plasma, VHF power at a frequency of 59.8 MHz was supplied from
the first power supply 5a, and VHF power at a frequency of 60.3 MHz
was supplied from the second power supply 5b. These VHF power
components were supplied to the ladder electrode 303 such that the
total power from the two power supplies 5a and 5b was, e.g., 3,000
W, thereby generating a discharge plasma between the substrate G
and the ladder electrode 303. In this discharge plasma, SiH.sub.4
decomposed to form an a-Si film or a nanocrystalline Si film on the
surface of the substrate G. That is, a thin film having a desired
film thickness was formed by performing film formation in this
state for, e.g., about 10 min. The film thickness distribution of
the formed film sample was measured, and the feeder distribution
center positions were finely adjusted so that an optimum
distribution was obtained. The film formation rate was as high as
1.0 nm/sec in the formation of a nanocrystalline film, and the
uniformity was slightly over .+-.10%. That is, the uniformity
necessary for an Si thin-film semiconductor of a solar cell was
achieved.
[0164] In this arrangement, different VHFs are unintentionally
supplied by using different power supplies. However, intentionally
setting different frequencies is of course similarly effective.
[0165] FIG. 13 is a graph showing the correlation between the
frequency difference (MHz) between two high-frequency waves and the
film thickness distribution (%) of a film formed on a substrate, by
plotting the frequency difference on the abscissa and the film
thickness distribution on the ordinate. While the frequency of the
high-frequency wave A was fixed to 60.0 MHz (a fundamental
frequency), the frequency of the high-frequency wave B was changed
to form a-Si films on 2.0 m.times.1.4 m rectangular glass
substrates. As is apparent from a characteristics curve F, the film
thickness distribution was 10% or less when the frequency
difference between the two high-frequency waves A and B was 1.5 to
6.0 MHz. Also, the film thickness distribution was lower than 15%
when the frequency difference was 1.0 to 10.0 MHz and lower than
20% when the frequency difference was 0.5 to 10.0 MHz. Furthermore,
even when the frequency difference was only 0.1 MHz, the film
thickness distribution exceeded 20% only slightly.
[0166] Furthermore, when the film thickness of a thin silicon film
formed on a large-area substrate G (2 m.times.1.4 m) was measured
by Raman spectroscopy, the peak ratio of a Raman spectrum exceeded
9:1. This proves that the film had high quality as a thin film for
a solar cell. Also, the refractive index, spectral characteristics,
and defect density of the thin film were measured. Consequently,
the measured values were substantially equal to values measured
when a film was formed on a small-area sample substrate (5
cm.times.5 cm) by using the same VHF (60 MHz).
[0167] A high-quality thin film is formed on the large-area
substrate G as described above because plasma ON/OFF caused by the
high-speed movement of an envelope is much shorter than the life of
active species (radicals). That is, in this embodiment the
difference between the two VHFs is 0.5 MHz. Therefore, ON/OFF is
repeated 500,000.times.2 times per second, and one OFF time is
1.times.10.sup.-6 sec. This OFF time is much shorter than the
extinction life ((.tau.=(2 (cm)).sup.2/(2.times.2.5.time-
s.10.sup.3 (cm.sup.2/sec))=8.times.10.sup.-4 sec) of an SiH.sub.3
active molecule, and is much shorter than the extinction life
(1.1.times.10.sup.-4 sec) of a hydrogen atom radical. Accordingly,
ON/OFF of the plasma is substantially negligible in the actual film
formation.
[0168] Note that another effect obtained by this embodiment is the
very small amount of particles produced during the film formation.
This is presumably because, as described in "Silane Gas
Decomposition by High-Frequency Modulation Discharge", Discharge
Research No. 138, pp. 27 to 36, 1992 (to be referred to as
reference 7 hereinafter), substantially no particles are produced
when the ON/OFF frequency is in the range of 0.5 Hz (inclusive) to
100 kHz (inclusive), i.e., the ON time is in the range of 0.01 msec
(inclusive) to 1 sec (inclusive), and preferably when the ON/OFF
frequency is 10 kHz or less, i.e., the ON time is 0.1 msec or more.
That is, since the growth time of particles is about 1 sec, no
particles increase for an ON time of 1 sec or less. However, when
the ON/OFF frequency is 100 kHz or more, i.e., when the OFF time is
0.01 msec or less, a state in which plasma is not regarded to be
off is set. That is, in this embodiment almost no particles were
produced when the ON/OFF frequency was set to 10 kHz, i.e., when
the ON time was set to 0.1 msec.
[0169] Furthermore, it is also possible to prevent an increase in
particles by discharging particles over a sufficient time by
prolonging the OFF time. That is, when a substrate area S is
200.times.200 cm.sup.2, a distance .DELTA.x from the discharge
electrode to the substrate is 2 cm, and a volume flow rate Q is
4.times.10.sup.5 cm.sup.3/sec, a discharge region dwell time t of a
source gas is calculated to be 0.2 sec by substituting these values
into equation (10) below. Therefore, by setting the OFF time to be
longer than the time t, i.e., 0.2 sec or more, preferably twice the
time t, i.e., 0.4 sec or more, it was possible to discharge
particles from the plasma generation region and suppress an
increase in particles in the reaction vessel.
t.apprxeq.(S.multidot..DELTA.x)/Q (10)
[0170] In this embodiment, a ladder electrode was used as the
electrode. When a mesh electrode reported in the reference 4 cited
previously was used instead of the ladder electrode, a film
thickness uniformity of 10% or less could be obtained. This
electrode is a kind of a ladder electrode and has a large number of
lateral electrode rods 305 according to this embodiment.
[0171] Also, this embodiment has been explained by taking the use
of VHFs around 60 MHz as an example. However, analogous effects
were obtained even when VHFs around 20, 200, and 700 MHz were
used.
[0172] (Second Embodiment)
[0173] The second embodiment of the present invention will be
described below with reference to FIG. 14. An apparatus 1B of this
embodiment is obtained by partially changing the VHF feeder circuit
of the apparatus 1A of the first embodiment described above. This
change in the feeder circuit permits the apparatus 1B to have an
operation condition range wider than that of the apparatus 1A. Also
in this embodiment, the apparatus is used to form a uniform film on
a 2 m.times.1.4 m substrate by using VHFs, and the arrangements of
a reaction vessel and the like except for a power-supply system are
the same as in the first embodiment. So, an explanation of points
common to the two embodiments will be omitted.
[0174] The apparatus 1B of the second embodiment differs from the
apparatus 1A of the first embodiment in four points {circle over
(1)} to {circle over (4)} below.
[0175] {circle over (1)} The oscillation frequencies of
high-frequency power supplies. In the apparatus 1A, two different
frequencies are generated by using the uncertainty of the built-in
quartz oscillators of the high-frequency power supplies 5a and 5b.
In the apparatus 1B, a two-wave signal generator 20B controls the
frequency difference to a constant value. In the former apparatus
(the apparatus 1A), no arbitrary frequency difference can be
selected. Accordingly, if the two oscillators have a frequency
difference of only 10 Hz, the envelope distribution moves only 10
Hz, so a plasma turns on/off at this cycle to adversely affect film
formation. Also, the oscillation frequency difference does not
stabilize with time. This may result in low reproducibility. In
contrast, the latter apparatus (the apparatus 1B) can be operated
with a fixed optimum frequency difference.
[0176] {circle over (2)} In the apparatus 1A, protection circuits
(not shown) of the two high-frequency power supplies 5a and 5b are
also independent of each other. However, the apparatus 1B has only
one protection circuit 22. Input power components to power supplies
5a and 5b are measured by power meters 6a, and 6b.sub.2 and, if one
of the two magnitudes exceeds a limiting value, the outputs from
both the power supplies are restricted. In the former apparatus
(the apparatus 1A), if the input power (the sum of the reflected
power and the input power from the second power supply 5b) to the
first power supply 5a exceeds the tolerance of the first power
supply 5a for some reason, the protection circuit of this first
power supply suppresses the output from the first power supply 5a.
However, the excess input from the second power supply 5b is not
suppressed at all and kept supplied. Hence, in the worst case the
first power supply 5a is damaged.
[0177] In contrast, if the same even occurs in the latter apparatus
(the apparatus 1B), the excess input to the first power supply 5a
activates the protection circuit 22 to suppress the outputs from
both the first and second power supplies 5a and 5b. Since the input
power to the first power supply 5a is suppressed, this first power
supply 5a is not damaged. While the input power is thus suppressed,
an impedance matching circuit 7b is adjusted to remove the cause of
the excess input from the second power supply 5b. This makes it
possible to again increase the outputs from the two power supplies
5a and 5b and supply desired power.
[0178] In the apparatus 1B, isolators 24a and 24b are inserted into
first and second feeder circuits to prevent excess input power
components to the power supplies 5a and 5b, respectively. Hence, no
protection circuit is particularly necessary. However, if the
reflected power exceeds the allowable power of the isolators 24a
and 24b to make these isolators 24a and 24b inoperable, the
protecting operation by this protection circuit 22 is required.
[0179] {circle over (3)} In the apparatus 1A, the impedance
matching circuit 7a is the only means for suppressing the input
power (the sum of the reflected power and the input power from the
second power supply 5b) to the first power supply 5a. In the
apparatus 1B, however, the isolators 24a and 24b each comprising a
circulator and load are inserted to eliminate the input power from
the electrode 303 to the power supplies 5a and 5b.
[0180] In the former apparatus (the apparatus 1A), even when the
power generated by reflecting the output from the first power
supply 5a by the electrode 303 can be completely reduced to zero by
the impedance matching circuit 7a, the input power from the other
power supply, i.e., the second power supply 5b via the electrode
303 and the impedance matching circuit 7a cannot be simultaneously
reduced to zero, because the phases and frequencies are different.
Therefore, if this power is large (the power transmitted through
the electrode 303 varies, i.e., increases or decreases, in
accordance with the generated state of a plasma), large power is
input to the first power supply 5a to make the state of this first
power supply 5a unstable. In the worst case, an excess input may
destroy the first power supply 5a. This situation readily occurs
especially when there is no plasma load before plasma
generation.
[0181] In contrast, in the latter apparatus (the apparatus 1B) the
isolators 24a and 24b are inserted into the feeder circuits.
Accordingly, inputs to the power supplies 5a and 5b can be
completely absorbed by the loads, and this prevents destruction of
the power supplies 5a and 5b by an excess input.
[0182] The frequency band width of an isolator, especially the
isolators 24a and 24b having kW-class high-frequency power as a
rated value as used in this embodiment, is very narrow. That is,
the frequency band width at a high-frequency power of 1 kW or less
is about 4% of the frequency used, and that at a high-frequency
power of about 2 kW is about 1% of the frequency used. Hence, the
frequency difference between the first and second power supplies 5a
and 5b must be decreased to these values. In this embodiment, the
oscillation frequency of the first power supply 5a is set at 60.2
MHz, and the oscillation frequency of the second power supply 5b is
set at 59.8 MHz. Consequently, the oscillation frequency difference
between the two power supplies 5a and 5b is set to 0.6 MHz or less
which corresponds to a frequency band width of 1% at a rated power
of 2 kW. {circle over (4)} In the apparatus 1A, each system
includes one of the two power meters 6a and 6b (two power meters in
total). In the apparatus 1B, one system includes the two power
meters 6a.sub.1 and 6a.sub.2, and another system also includes two
power meters 6b.sub.1 and 6b.sub.2 (four power meters in total).
Since the isolators 24a and 24b are inserted into the feeder
circuits, input power components to the power supplies 5a and 5b,
i.e., the reflected power components in the power meters 6a.sub.1
and 6a.sub.2 are normally zero regardless of the impedance matching
state. To optimize the impedance matching state, therefore, it is
necessary to arrange the power meters 6a.sub.2 and 6b.sub.2 closer
to the impedance matching circuits than the isolators 24a and 24b
and measure the return power components from the impedance matching
circuits 7a and 7b.
[0183] Although the above improvements complicated the apparatus, a
total input power of 4 kW was obtained. Hence, a high film
formation rate of 1.5 nm/sec was obtained in, e.g., nanocrystalline
film formation. The film thickness uniformity was .+-.10%. This
clears the film thickness uniformity requirement necessary for an
Si thin-film semiconductor of a solar cell.
[0184] (Third Embodiment)
[0185] The third embodiment of the present invention will be
described below with reference to FIGS. 15 to 20.
[0186] As shown in FIG. 15, a plasma CVD apparatus 1C comprises a
vacuum chamber 2C for surrounding a substrate G, a ladder electrode
303 opposed to the substrate G in this vacuum chamber 2C, and a
feeder circuit 8A for feeding power to this ladder electrode 303.
The vacuum chamber 2C communicates with a vacuum pump via an
exhaust passage (not shown) and is evacuated to about an internal
pressure of 1.times.10.sup.-3 to 1.times.10.sup.-7 Torr. Also, a
gas supply pipe (not shown) is placed behind the electrode 303 in
the vacuum chamber 2C. When silane or disilane is supplied as a
film formation process gas from a gas supply source to the gas
supply pipe, this process gas is supplied from a large number of
inlet ports to a space between the electrode 303 and the substrate
G.
[0187] The substrate G is held by a ground electrode 3 and heated
to a predetermined temperature region by a built-in heater (not
shown). As this substrate G, a transparent glass substrate 1 mm
thick, 460 mm wide, and 460 mm long was used.
[0188] The ladder electrode 303 as a discharge electrode is formed
by assembling round rod electrode members at equal pitches into the
form of a lattice. This ladder electrode 303 is connected to a
feeder (central conductor) 6 of the circuit 8A by four feeding
points 9a and 9b. The two feeding points 9a are formed in positions
which divide the round rod electrode member placed at one end into
three substantially equal parts. The other two feeding points 9b
are formed in positions which divide the round rod electrode member
placed at the other end into three substantially equal parts. The
ladder electrode 303 has dimensions of, e.g., 520 mm.times.520 mm,
and the round rod electrode member has a diameter of, e.g., 6
mm.
[0189] The feeder circuit 8A includes a high-frequency oscillator
20, a distributor 26, a phase shifter 42, a pair of amplifiers 41a
and 41b, and a pair of impedance matching circuits 7a and 7b. The
high-frequency oscillator 20 is connected to the amplifiers 41a and
41b via the distributor 26. The amplifiers 41a and 41b are
connected to the impedance matching circuits 7a and 7b which are
connected to the feeding points 9a and 9b, respectively.
[0190] An output circuit of the distributor 26 branches into two
parts, and one of these branched circuits 8A includes the phase
shifter 42 driven and controlled by a computer 43. Each branched
circuit 8A further branches into two circuits 8a and 8b. These
branched circuits 8a and 8b are connected to the electrode 303 via
the feeding points 9a and 9b, respectively.
[0191] A quartz oscillator having a rated frequency of 60 MHz was
used as the high-frequency oscillator 20. A full solid-state
element type analog voltage-controlled phase shifter was used as
the phase shifter 42. The high-frequency oscillator 20 oscillates a
very high frequency (VHF), and this VHF is distributed by the
distributor 26 and fed to the electrode 303 via the amplifiers 41a
and 41b, the impedance matching circuits 7a and 7b, and the feeding
points 9a and 9b. On the basis of a predetermined processing data
signal transmitted from the computer 43, the phase shifter 42
performs high-speed phase modulation for one distributed VHF at a
repetition rate of a maximum of 100 kHz.
[0192] As shown in FIGS. 16 and 17, the feeder (central conductor)
6 is passed through a coaxial cable 61 and connected to the
electrode 303 by the feeding points 9a and 9b. An insulator 63 is
mounted on the end portion of the coaxial cable 61 by a coupling
62, thereby insulating the electrode 303 from the sheath of the
cable 61. A plurality of holes 64 are formed in side portions of
the insulator 63. A gas passage 66 in the coaxial cable 61
communicates with a gas supply source 68 and the holes 64 of the
insulator. The gas supply source 68 contains industrially pure
hydrogen gas H.sub.2. This hydrogen gas is supplied from the gas
supply source 68, passed through the gas passage 66 in the cable
61, and blown off from the side holes 64 and an upper-end hole 65,
thereby blowing away a silane plasma existing at the feeding points
9a and 9b and its vicinity. Simultaneously, a plasma having a high
hydrogen concentration etches unnecessary film formation components
deposited on the insulator 63 and the like near the feeder
distribution center. The blow of this hydrogen gas effectively
prevents the deposition of unnecessary film formation components
and the generation of particles near the feeding points 9a and 9b
as an electric field concentrated portion.
[0193] In the above embodiment, the deposition of film formation
components and the generation of particles are prevented by blowing
pure hydrogen gas against each feeder distribution center. However,
the present invention is not limited to this embodiment. That is, a
similar effect can be obtained by blowing another gas such as argon
gas against each feeder distribution center.
[0194] Furthermore, the method of the present invention is
applicable not only to feeding points but also to parts where the
deposition of unnecessary film formation components and the
generation of particles are undesirable. For example, if a silicon
film is deposited on an insulator pillar for supporting an
electrode, the creeping insulation strength of the pillar lowers.
In the worst case, a line-to-ground fault occurs. When a hydrogen
local supply method analogous to the one described above was
performed for this pillar, deposition was suppressed and no
line-to-ground fault occurred.
[0195] The formation of a nanocrystalline Si film on a glass
substrate using the plasma CVD film forming apparatus will be
described below.
[0196] The film formation conditions were substrate dimensions of
46 cm.times.46 cm, a substrate temperature of 200.degree. C., a
reaction vessel internal pressure of 150 mTorr, a silane gas supply
amount of 50 sccm, and a hydrogen gas supply amount of 1,500
sccm.
[0197] When the frequency of high-frequency power was set at 60 MHz
and the distance between electrode and substrate was set at 10 mm
in this apparatus, a standing wave was generated by the
conventional feeding method, and no uniform film formation was
possible.
[0198] FIGS. 18 and 19 are three-dimensional graphs showing film
formation rate distributions when the phase difference is set to
constant values of 0.degree. and 90.degree., respectively, by a
phase modulator. Referring to FIGS. 18 and 19, the positions on a
substrate with respect to the discharge electrode are plotted on
the X and Y axes, and the deposition rate (nm/sec) is plotted on
the ordinate. As shown in FIGS. 18 and 19, with the fixed constant
phase difference an envelope remains still as a standing wave to
produce a deposition rate distribution. FIGS. 18 and 19 also reveal
that the deposition rate distribution can be changed by changing
the phase difference. This is principally because the change in the
phase difference changes the envelope distribution (varies the
nodes and antinodes of the standing wave distribution).
[0199] In this embodiment, therefore, high-frequency power
components are supplied from two feeding systems, and the phase
difference between them is changed with time, thereby moving the
envelope and obtaining a uniform film thickness distribution by
time quadrature. This is equivalent to case (b) (the method of
supplying high-frequency waves having the same frequency while
changing the phase difference with time) in "BRIEF SUMMARY OF THE
INVENTION".
[0200] If the above phase difference is slowly changed, active
molecules or atoms in the plasma increase or decrease accordingly.
Therefore, the arrival flux of these molecules or atoms with
respect to the substrate varies with time, and this raises or
lowers the deposition rate. In the worst case, a state equivalent
to plasma OFF by which no film is formed appears. Additionally, the
quality of deposited films temporally changes, and this change
sometimes influences the quality of the film finally formed. This
is a problem in a nanocrystalline type silicon thin-film solar cell
in which delicate film quality is important. This makes the
formation of a uniform, high-quality film on a large-area substrate
difficult.
[0201] Also, if a mechanical phase modulator is used instead of a
phase shifter, frequent maintenance is necessary because sliding
portions wear. Additionally, high-speed phase modulation is
impossible.
[0202] In the method of the present invention, however, the
computer 43 rapidly and accurately controls the phase shifter 42,
and the high-speed phase modulation by this phase shifter 42 shifts
the phase of high-frequency power supplied to one end of the
electrode 303 from the phase of high-frequency power supplied to
the other end. Hence, in a certain instant an envelope distribution
is generated on the electrode 303 to produce local variations in
the voltage amplitude distribution. In the whole processing time,
however, the voltage amplitude distribution on the electrode 303 is
averaged, and the density of a plasma generated between the
electrode 303 and the substrate G is uniformized.
[0203] When this phase modulation circuit 8A is used to rapidly
modulate a high frequency at a maximum of 100 kHz, the envelope
generated on the electrode moves at the same frequency. This
movement is much shorter than the life of SiH.sub.3 active
molecules or H active atoms dominating film deposition. Therefore,
the flux of these active molecules or atoms arriving at the
substrate hardly changes with time. This allows the deposition of a
film having a uniform film thickness and uniform film quality.
[0204] Furthermore, deposition rate distributions with several
phase differences were previously measured as shown in FIGS. 18 and
19 and input to the computer 43. On the basis of this data,
deposition time ratios corresponding to the individual phase
differences necessary to achieve a uniform distribution were
calculated to form phase difference change patterns M1, M2, and M3
as shown in FIG. 20. When the phase shifter 42 was controlled by
using these phase difference change patterns M1, M2, and M3, film
formation was possible by which both the film thickness
distribution and the film quality fell within the ranges of .+-.5%
of their respective target values.
[0205] When the apparatus was operated by setting the maximum value
of high-frequency power to about 800 W which is limited by the
rating of the maximum power of the high-frequency amplifier, an
average deposition rate of about 2 nm/sec was obtained. Also, as
described above, the film thickness distribution of the deposited
films cleared .+-.5% or less necessary for solar cells and
thin-film TFTs.
[0206] The substrate dimensions used in this embodiment were 46
cm.times.46 cm. However, even when substrates having the same
dimensions of 2.0.times.1.4 m as in the first embodiment were used,
a uniformity of 10% or less could be obtained by a similar
method.
[0207] (Fourth Embodiment)
[0208] The fourth embodiment of the present invention will be
described below with reference to FIG. 21. An apparatus 1D of this
embodiment is obtained by partially changing the VHF feeder circuit
of the apparatus 1B of the second embodiment described earlier.
[0209] A feeder circuit of this apparatus 1D includes two
independent high-frequency power supplies 5a and 5b, an oscillator
20D, phase detectors 30a and 30b, a phase-shifting device 33, and a
function generator 34. The two power supplies 5a and 5b incorporate
amplifiers and independently feed very-high-frequency (VHF) power
components having the same frequency of 60 MHz. The phase-shifting
device 33 is inserted between the oscillator 20D and the second
power supply 5b and shifts the phase of the high frequency fed from
the second power supply 5b. Consequently, the high frequency fed
from the second power supply 5b to an electrode 303 is so
controlled as to have a certain phase difference from the high
frequency fed from the first power supply 5a to the electrode 303.
The function generator 34 transmits an arbitrary waveform signal to
the phase-shifting device 33 and controls a temporal change in the
phase difference.
[0210] When the oscillator 20D oscillates a VHF wave having a
frequency of 60 MHz, one system (a signal S1) of the oscillation
signal is directly amplified by the first power supply 5a and input
to the first phase detector 30a via a power meter 6a.sub.1, an
isolator 24a, a power meter 6a.sub.2, and an impedance matching
circuit 7a. The phase detector 30a detects the phase of the signal
S1, and this signal S1 is supplied to the electrode 303 via a
distributor 26a.
[0211] The phase of the other system (a signal S2) of the
oscillation signal is shifted by the phase-shifting device 33.
After that, the signal S2 is amplified by the second power supply
5b and input to the second phase detector 30b via a power meter
6b.sub.1, an isolator 24b, a power meter 6b.sub.2, and an impedance
matching circuit 7b. The second phase detector 30b detects the
phase of the signal S2, and this signal S2 is supplied to the
electrode 303 via a distributor 26b.
[0212] The phase-shifting device 33 performs feedback control such
that the difference between the phase of the signal S1 detected by
the first phase detector and the phase of the signal S2 detected by
the second phase detector temporally changes in accordance with the
phase difference control signal generated by the function generator
34. That is, a temporal change in the phase difference is
controlled by the phase-shifting device 33 in accordance with the
arbitrary waveform signal generated by the function generator 34.
The phase detectors 30a and 30b detect the phase difference between
the signals S1 and S2 immediately before the distributors 26a and
26b, respectively. This phase detection signal is supplied to the
phase-shifting device 33 to control the phase-shifting operation by
feedback.
[0213] In this embodiment, if the apparatus is operated with a
fixed constant phase difference, an envelope spatially stops to
generate a standing wave, and this makes a plasma nonuniform. In
contrast, by moving the envelope by changing the phase difference
with time, it is possible to suppress a standing wave and obtain a
uniform plasma and a uniform film thickness distribution by time
average within the film formation time. Note that the isolators 24a
and 24b and a protection circuit 22 contribute to stabilization of
the power supplies 5a and 5b when they are operated, as in the
apparatus 1B described previously.
[0214] If the phase difference is modulated too rapidly, the
frequency band of a VHF widens to exceed the frequency band width
of the isolators 24a and 24b. This may damage these isolators 24a
and 24b. Therefore, a spectrum analyzer (not shown) was connected
to the phase detectors 30a and 30b to determine the modulation rate
such that the band width was 1% or less of the rated frequency.
[0215] In this embodiment, the band width did not exceed 1% when
modulation was performed by setting the frequency of the phase
control signal from the function generator 34 to 10 kHz.
[0216] In the present embodiment, the uniformity of deposition rate
was within .+-.8% when the function generator adjusted the
modulation width was adjusted to .+-.110% while the modulation
frequency of the phase shifting device was set at 10 kHz.
[0217] (Fifth Embodiment)
[0218] The fifth embodiment will be described below with reference
to FIG. 22. In this embodiment, a description of the same portions
as in the above embodiment will be omitted to avoid
duplication.
[0219] A high-frequency power supply 5 of a plasma CVD film forming
apparatus 1E is connected to a feeder circuit 8B via an impedance
matching circuit 44. This feeder circuit 8B branches into two
circuits. One branched circuit 8B further branches into two
branched circuits 8a which are connected to a ladder electrode 303
via two feeding points 9a. The other branched circuit 8B has a
phase modulation device 45. This branched circuit 8B also further
branches into two branched circuits 8b which are connected to the
ladder electrode 303 via two feeding points 9b. A mechanically
driven device having a vacuum capacitor was used as the phase
modulation device 45. The same device as in the third embodiment
was used as the high-frequency power supply 5.
[0220] In this embodiment, feeding points of a multi-point feeding
system are divided into two groups. A difference is produced
between the phases of high-frequency power components supplied to
feeding points of each group, and the high-frequency power
components are applied to the ladder electrode 303 via these
feeding points. In this manner, the position of an envelope
distribution can be controlled.
[0221] The apparatus 1E of this embodiment was used to form a-Si
films on glass substrates G. The film formation conditions of this
embodiment were as follows.
[0222] Substrate dimensions: 460 mm.times.460 mm.times.1 mm
[0223] Substrate temperature: 200.degree. C.
[0224] Pressure: 150 mTorr
[0225] Process gas: monosilane(SiH.sub.4)+hydrogen(H.sub.2)
[0226] Gas flow rate: 50 sccm SiH.sub.4+1,500 sccm H.sub.2
[0227] Electrode-to-substrate distance: 10 mm
[0228] Electrode dimensions: 520 mm.times.520 mm.times.6 mm
[0229] Electrode material: stainless steel (JIS SUS304)
[0230] Power-supply frequency: 60 MHz
[0231] Target film thickness: 1,000 nm
[0232] Even under the above conditions, film formation rate
distributions analogous to those shown in FIGS. 18 and 19 were
obtained with phase differences of 0.degree. and 90.degree..
However, the absolute value of the film formation rate was about
1/5.
[0233] Films were formed by setting the total film formation time
to 6 min and manually controlling the phase difference at 0.degree.
for the first three minutes and 90.degree. for the last three
minutes. In this embodiment, an average deposition rate of about
0.4 nm/sec was obtained when the apparatus was operated by setting
the high-frequency power to about 200 W that was limited by the
rating of the phase modulation device. Also, the obtained film
thickness distribution was .+-.15%. These results show that the
method of this embodiment can be used in the manufacture of
low-cost versatile solar cells.
[0234] (Sixth Embodiment)
[0235] The sixth embodiment of the present invention will be
described below with reference to FIG. 23. An apparatus 1F of this
embodiment is obtained by partially changing the VHF feeder circuit
of the apparatus 1A of the first embodiment.
[0236] A feeder circuit of this apparatus 1F comprises two
independent power supplies 5a and 5b, two independent power meters
6a and 6b, a mixer 40, an impedance matching circuit 7, and a
distributor 26. The independent power supplies 5a and 5b output VHF
power components having different frequencies. The mixer 40 mixes
these VHF power components, and the mixed VHF power is supplied to
a ladder electrode 303 via the impedance matching circuit 7 and the
distributor.
[0237] In this embodiment, a film thickness uniformity of .+-.10%
or less could be obtained regardless of the simplicity of the
feeder circuit. Note that in this embodiment the maximum value of
power is limited to 2 kW by the rating of the mixer 40.
[0238] (Seventh Embodiment)
[0239] The seventh embodiment of the present invention will be
described below with reference to FIG. 24. An apparatus 1G of this
embodiment is obtained by partially changing the VHF feeder circuit
of the apparatus 1F of the above sixth embodiment.
[0240] A feeder circuit of this apparatus 1G comprises two
independent high-frequency generators 20G.sub.1 and 20G.sub.2, a
mixer 40, a high-frequency amplifier 41, a power meter 6, an
impedance matching circuit 7, and a distributor 26. The independent
high-frequency oscillators 20G.sub.1 and 20G.sub.2 oscillate
different VHFs. These VHFs are mixed by the mixer 40, amplified by
the amplifier 41, and supplied to a ladder electrode 303 via the
power meter 6, the impedance matching circuit 7, and the
distributor 26.
[0241] Also in this embodiment, a film thickness uniformity of
.+-.10% or less could be obtained regardless of the simplicity of
the feeder circuit. The arrangement of feeding points in this
embodiment could be the same as in the sixth embodiment. On the
other hand, in this embodiment the maximum value of power was not
restricted by the rating of the mixer 40, and film deposition was
possible at 4 kW.
[0242] (Eighth Embodiment)
[0243] The eighth embodiment of the present invention will be
described below with reference to FIG. 25. An apparatus 1H of this
embodiment is obtained by partially changing the VHF feeder circuit
of the apparatus 1G of the above seventh embodiment. In the seventh
embodiment, the mixer 40 mixes two signals having different
frequencies oscillated by the two high-frequency oscillators,
thereby generating a multiple high frequency which is a mixture of
plurality of frequencies. In this embodiment, the same effect can
be obtained by using one arbitrary waveform generator 20H.
[0244] FIG. 26A is a graph of a frequency spectral waveform showing
a multiple high frequency in a frequency band of 59 to 61 MHz. In
FIG. 26A, the frequency (MHz) is plotted on the abscissa, and the
amplitude is plotted on the ordinate. First, this frequency
spectrum was converted into a temporally changing waveform by
performing inverse Fourier transform by using a computer (not
shown). The result is shown in FIG. 26B. That is, FIG. 26B is a
graph showing the waveform obtained by performing inverse Fourier
transform for the multiple high frequency shown in FIG. 26A. In
FIG. 26B, the time elapsed (.times.10.sup.-6 sec) from the
beginning of VHF oscillation is plotted on the abscissa, and the
voltage (V) on the electrode is plotted on the ordinate. FIG. 26B
shows an envelope which contains a wave of about 60 MHz, although
details of the waveform are not shown. That is, this waveform
contains waves at different frequencies of 59 to 61 MHz. This
waveform is stored in the arbitrary waveform generator 20H and
repetitively generated from it. Consequently, a multiple
high-frequency wave containing frequencies of 59 to 61 MHz is
continuously supplied to a high-frequency amplifier 41. This
high-frequency wave is then supplied to a ladder electrode 303 via
a power meter 6, an impedance matching circuit 7, and a distributor
26. Also in this embodiment, a film thickness uniformity of .+-.10%
or less could be obtained as in the seventh embodiment described
above.
[0245] (Ninth Embodiment)
[0246] The ninth embodiment of the present invention will be
described below with reference to FIG. 27. An apparatus 1J of this
embodiment includes a circular parallel plate electrode 313 in a
vacuum chamber 2J. Six VHF feeder circuits are connected to this
parallel plate electrode 313 via six feeding points 9a. The six
feeding points 9a are connected to the circular parallel plate
electrode 313 by point symmetry. The six VHF feeder circuits are
independent of one another. The first VHF feeder circuit includes a
high-frequency power supply 5a, a power meter 6a, and an impedance
matching circuit 7a. Analogously, the second to sixth VHF feeder
circuits include high-frequency power supplies 5b to 5f, power
meters 6b to 6f, and impedance matching circuits 7b to 7f,
respectively.
[0247] In this embodiment, a plasma on the parallel plate electrode
313 could be uniformized by supplying high-frequency waves having
different frequencies from the six independent feeder circuits. A
film thickness uniformity of .+-.10% or less could be obtained by
adjusting the VHF power and the electrode spacing. However, the
range of uniformization conditions of the circular parallel plate
electrode 313 is narrower than that of the ladder electrode 303. In
this embodiment, the aforementioned uniformity could be obtained
only at a power of 2.0 to 2.2 kw and an electrode spacing of 25 to
30 mm.
[0248] (10th Embodiment)
[0249] The 10th embodiment of the present invention will be
described below with reference to FIGS. 28, 29, and 30. FIG. 28 is
a plan block diagram showing an apparatus of this embodiment. FIG.
32 is a sectional block diagram showing the apparatus of this
embodiment. FIG. 33 is a perspective block diagram showing the
external appearance of the apparatus of this embodiment. An
apparatus 1K of this embodiment includes a shower type parallel
plate electrode 323, instead of the ladder electrode 303 of the
apparatus 1A of the first embodiment. A gas supply pipe 17 is
connected to the upper surface of this electrode 323. This gas
supply pipe 17 communicates with a hollow portion 324 in the
electrode via a port 321. The hollow portion 324 communicates with
a discharge plasma generation space 330 via a plurality of pores
325.
[0250] The electrode 323 is held on the side walls of a chamber 2K
by insulating members 336 and 338. Coaxial cables 8b of two feeder
circuits 341 and 342 are introduced into the chamber 2K and
connected to the electrode 323 via a plurality of feeding points 9a
and a plurality of feeding points 9b.sub.1, respectively.
Insulating members 340 insulate portions where the cables 8b extend
through the walls of the chamber 2K.
[0251] The feeder circuit 341 includes a high-frequency power
supply 5a, a power meter 6a, an impedance matching circuit 7a, and
a distributor 26a. The distributor 26a feeds power to the feeding
points 9a via the eight branched cables 8b. The feeder circuit 342
includes a high-frequency power supply 5b, a power meter 6b, an
impedance matching circuit 7b, and a distributor 26b. The
distributor 26b feeds power to the feeding points 9b.sub.1 via the
eight branched cables 8b.
[0252] A ground electrode 3 is supported by a plurality of columns
331 so as to oppose parallel to the shower electrode 323. A pair of
gate valves 334 are formed in the side surfaces of the chamber 2K
to allow a substrate G to be loaded/unloaded into/from the chamber
2K. When the gate valves 334 are opened, a loader (not shown) loads
the substrate G into the chamber 2K and places the substrate G on
the ground electrode 3. A heater 3a connected to a power supply 332
is embedded in the ground electrode 3 and heats the substrate
G.
[0253] An exhaust pipe 18 communicates with an appropriate portion
of the chamber 2K. An evacuation device 72 evacuates the chamber 2K
to a high vacuum degree.
[0254] The apparatus 1K of this embodiment was used to form films
on the substrates G under the same conditions as in the first
embodiment. Consequently, in this embodiment a film thickness
uniformity of .+-.12% or less could be obtained. In the apparatus
1K of this embodiment, when the arrangement of the feeding points
was changed, the film thickness uniformity largely changed
accordingly. Therefore, it was necessary to optimize the feeder
distribution center arrangement.
[0255] (11th Embodiment)
[0256] The 11th embodiment of the present invention will be
described below with reference to FIG. 31. An apparatus 1L of this
embodiment is obtained by partially changing the
very-high-frequency (VHF) feeder circuit of the apparatus 1A of the
first embodiment shown in FIG. 8.
[0257] This apparatus 1L comprises an AM modulation oscillator 50,
an amplifier 41, a power meter 6, an impedance matching circuit 7,
and a distributor 26. A high-frequency wave from the AM modulation
oscillator 50 was amplified by the amplifier 41 to generate an
AM-modulated high-frequency wave having a carrier frequency of 60
MHz, a modulation frequency of 30 MHz, and a modulation amplitude
range from 100% to 20%. This AM-modulated high-frequency wave was
fed to a ladder electrode 303 via the power meter 6, the impedance
matching circuit 7, and the distributor 26.
[0258] In this embodiment, a film thickness distribution of .+-.15%
could be obtained regardless of the simplicity of the circuit.
[0259] (12th Embodiment)
[0260] The 12th embodiment will be described below with reference
to FIG. 32. In this embodiment, a description of the same portions
as in the above embodiments will be omitted to avoid
duplication.
[0261] A plasma CVD apparatus 1M has a high-frequency oscillator
20M with an FM modulation function as a power supply. An arbitrary
waveform generator was used as this high-frequency oscillator 20M.
An amplifier 41 and an impedance matching circuit 7 are connected
in series to the high-frequency oscillator 20M. An output circuit
of the impedance matching circuit 7 branches into two circuits, and
each branched circuit 8M further branches into two circuits. These
branched circuits 8a and 8b are connected to an electrode 303 via a
pair of feeding points 9a and a pair of feeding points 9b,
respectively.
[0262] In this embodiment, the use of FM modulation made it
possible to simplify the feeder circuit and uniformize the film
thickness as in the above embodiments. That is, a film thickness
uniformity of .+-.10% or less was obtained on a 10 cm.times.10 cm
square substrate by setting the oscillation frequency to 200 MHz,
the modulation frequency to 1 MHz, and the maximum deviation amount
to 20%. This film thickness uniformity was much superior to a film
thickness uniformity of .+-.50% obtained by the conventional
method.
[0263] Similar effects were also obtained by frequency chirp. That
is, the film thickness uniformity was .+-.12% when the chirp
frequency was 10 MHz and the maximum deviation amount was 20%.
[0264] (13th Embodiment)
[0265] A thin semiconductor film, thin metal film, or insulating
film of a semiconductor element can be etched by generating a
plasma by using a halogen-based gas, e.g., a chlorine-based gas,
thereby generating negative chlorine ions (Cl.sup.-). In this case,
as described in S. Samukawa, "Role of Negative Ions in
High-Performance Etching Using Pulse-Time-Modulated Plasma",
Extended Abstract of 4th International Conference on Reactive
Plasma, SR 1.04, p. 415, 1998 (to be referred to as reference 8
hereinafter), a plasma is conventionally generated and extinguished
by turning on/off electric power generated from a high-frequency
power supply, thereby generating a large amount of negative
chlorine ions by the electron adhesion effect when the plasma
disappears. In addition to this effect, the rate and quality of
etching are increased by using the effect of disappearance of the
wall electric charge generated on the substrate surface. In this
embodiment, a plasma is turned on/off by moving the nodes and
antinodes of an envelope.
[0266] The apparatus 1B of the second embodiment shown in FIG. 14
was used. Two different frequencies of 750.000 and 750.004 MHz were
used to set the frequency difference at 4 kHz, and the electrode
dimensions were set to 33 cm.times.33 cm. In addition, a
halogen-based gas, e.g., a chlorine-based gas was used to generate
a plasma to generate negative chlorine ions (Cl.sup.-), thereby
etching a thin Au film on the substrate surface. In this state, the
plasma was ON in the antinodes of an envelope distribution and OFF
in its nodes. Therefore, etching could be performed at high rate by
efficiently and simply generating a large amount of negative
chlorine ions by rapidly moving the envelope.
[0267] Since the frequency difference was 4 kHz, the changing cycle
of the envelope was set to about 250 .mu.sec so that the cycle was
longer than, i.e., twice to four times, a negative chlorine ion
generation time of about 100 .mu.sec described in reference 10.
That is, the plasma turns on/off at a cycle equivalent to the
reciprocal of the frequency difference between a plurality of high
frequencies. Accordingly, the plasma OFF time was about 125
.mu.sec, so sufficient negative ions are generated.
[0268] The etching conditions of this embodiment were as
follows.
[0269] Substrate dimensions: 300 mm.times.300 mm.times.0.5 mm
[0270] Substrate temperature: 80.degree. C.
[0271] Pressure: 2 mTorr
[0272] Etching gas: Cl.sub.2
[0273] Gas flow rate: 50 sccm
[0274] Electrode-to-substrate distance: 20 mm
[0275] Electrode dimensions: 330 mm.times.330 mm.times.5 mm
[0276] Electrode material: stainless steel (JIS SUS304)
[0277] Power-supply frequencies: 750.000 MHZ, 750.004 MHZ
[0278] Target etching rate: 3 nm/sec
[0279] Since 750 MHz was used as the frequency of a high-frequency
wave, the plasma density became higher than when 13.56 MHZ of the
conventional method was used, and simultaneously the thickness of
the plasma sheath decreased. Consequently, a large amount of
negative chlorine ions generated in the plasma efficiently flowed
into the substrate surface, and this further raised the etching
rate.
[0280] In this embodiment, it was possible to obtain an etching
rate about 40 times that obtained when a conventional single
frequency of 13.56 MHz was used.
[0281] The method of this embodiment is also applicable to
so-called self-cleaning which removes foreign matter (thin
silicon-based films) sticking to the chamber inner walls of a PCVD
apparatus by using a discharge plasma.
[0282] The effect of this embodiment is obtained by moving an
envelope by using the frequency difference between two frequencies.
However, the same effect can naturally be obtained by another
envelope moving method, e.g., a phase difference change, AM
modulation, or FM modulation.
[0283] (14th Embodiment)
[0284] The 14th embodiment of the present invention will be
described below with reference to FIG. 33.
[0285] An apparatus 1N of this embodiment is obtained by changing
the feeding points and high frequencies of the apparatus 1A of the
first embodiment.
[0286] This apparatus 1N includes first and second high-frequency
power supplies 5a and 5b, two feeding points 9a attached to a
ladder electrode 303, and two feeding points 9b.sub.2 attached to a
ground electrode 3. The first power supply 5a supplies
high-frequency power at a frequency of 60.00 MHz to the ladder
electrode 303 via the feeding points 9a. The second power supply 5b
supplies high-frequency power at a frequency of 13.56 MHz to the
ground electrode 3 via the feeding points 9b.sub.2.
[0287] This embodiment was applied to silicon film etching using
halogen-based gas NF.sub.3. Consequently, a high etching rate
(about 10 nm/sec) was uniformly obtained in a large area of 1
m.times.1 m by the high density resulting from a very high
frequency of 60 MHz, by the substrate bias effect obtained by 13.56
MHz, and by the effect of suppressing a standing wave obtained by
the difference between the two frequencies.
[0288] This embodiment can also be applied to a surface treatment
method such as plasma cleaning of a reaction vessel used in the
formation of a thin silicon film, i.e., so-called
self-cleaning.
[0289] (15th Embodiment)
[0290] The 15th embodiment of the present invention will be
described below with reference to FIG. 34. An apparatus 1Q of this
embodiment includes upper and lower discharge electrodes 323a and
323b in place of the ground electrode 3 of the apparatus 1K of the
10th embodiment described earlier. These upper and lower electrodes
323a and 323b are flat plates having substantially the same size
and arranged parallel to each other. Four first feeding points 9a
are formed in a side portion of the upper electrode 323a. An
impedance matching circuit 7a, a power meter 6a, and a
high-frequency power supply 5a are connected to these four first
feeding points 9a via a coaxial cable 8a and a T-shaped branched
connector 27a. Four second feeding points 9b are formed in a side
portion of the lower electrode 323b. An impedance matching circuit
7b, a power meter 6b, and a high-frequency power supply 5b are
connected to these four second feeding points 9a via a coaxial
cable 8b and a T-shaped branched connector 27b. The four first
feeding points 9a are attached at substantially equal intervals to
a short edge on one side of the upper electrode 323a. The four
second feeding points 9b are attached at substantially equal
intervals to a short edge on the other side of the lower electrode
323b. Accordingly, the four second feeding points 9b are
symmetrically positioned on the side far away from the four first
feeding points 9a.
[0291] In the apparatus 1Q of this embodiment, when a VHF is fed
from the power supply 5b to the lower electrode 323b via the four
second feeding points 9b, the lower electrode 323b generates a
voltage similar to the voltage distribution R1 shown in FIG. 10A in
the first embodiment. When a VHF is fed from the power supply 5a to
the upper electrode 323a via the four first feeding points 9a, the
upper electrode 323a generates a voltage similar to the voltage
distribution R2 shown in FIG. 10B. Therefore, on a substrate G a
voltage distribution analogous to the synthetic voltage
distribution R3 of the two voltage distributions R1 and R2 is
generated. This synthetic voltage distribution R3 is highly uniform
and generates a plasma having a substantially uniform distribution
density, so the uniformity of the film thickness improves. A high
film formation rate of 0.9 nm/sec was obtained in nanocrystalline
film formation, and the uniformity was about .+-.10%. That is, the
uniformity necessary for Si thin-film semiconductors for solar
cells was achieved.
[0292] Comparative examples in which amorphous silicon films (a-Si
films) were formed on substrates by using conventional feeding
methods will be described below.
COMPARATIVE EXAMPLE 1
[0293] In Comparative Example 1, a parallel plate plasma CVD
apparatus 400 shown in FIG. 35 was used. This apparatus 400 is
known by the reference 1 cited previously. Upper and lower
electrodes 402 and 404 are opposed in a vacuum vessel 401. The
upper electrode 402 is mounted on the upper portion of the vacuum
vessel 401 via an insulator 405. This upper electrode 402 is
connected to an impedance matching circuit 406 and a high-frequency
power supply 407 via a coaxial cable 408. The power-supply
frequency is 13.56 MHz. The cable 408 is connected to the upper
electrode 402 by a feeder distribution center 409. This feeder
distribution center 409 is formed on the surface (outer surface)
exposed to the atmosphere of the upper electrode 402 so as not to
be exposed in a plasma generation space 410.
[0294] The lower electrode 404 houses a heater 403 for heating a
substrate G. A heater power supply is controlled by a controller
(not shown). The substrate G is placed on the lower electrode 404
and heated to a predetermined temperature by the heater 403. Note
that the lower electrode 404 is grounded.
[0295] A gas supply pipe 411 is open in the upper portion of the
vacuum vessel 401. This gas supply pipe 411 communicates with a gas
supply source (not shown) via a flow rate control valve 416. The
gas supply source contains monosilane (SiH.sub.4). An exhaust pipe
412 is open in the lower portion of the vacuum vessel 401. This
exhaust pipe 412 communicates with a vacuum pump 413.
[0296] The above apparatus 400 was used to form a-Si films on glass
substrates. The film formation conditions of Comparative Example 1
were as follows.
[0297] Substrate dimensions: 1,200 mm.times.1,000 mm.times.1 mm
[0298] Substrate temperature: 200.degree. C.
[0299] Pressure: 0.05 to 0.5 Torr
[0300] Process gas: monosilane (SiH.sub.4)
[0301] Gas flow rate: 100 sccm
[0302] Electrode-to-substrate distance: 30 mm
[0303] Electrode dimensions: 1,300 mm.times.1,100 mm.times.50
mm
[0304] Electrode material: stainless steel (JIS SUS304)
[0305] Power-supply frequency: 13.56 MHz
[0306] Target film thickness: 1,000 nm
[0307] As a consequence, a-Si films having a variation of .+-.18%
with respect to the target film thickness were obtained. The
average film formation rate was 0.13 nm/sec.
COMPARATIVE EXAMPLE 2
[0308] In Comparative Example 2, a parallel plate plasma CVD
apparatus 500 shown in FIGS. 36 and 37 was used. This apparatus 500
is known by the reference 1 cited previously.
[0309] As Comparative Example 2, the second apparatus described in
reference 1 will be explained with reference to FIGS. 36 and 37. In
this Comparative Example 2, a description of the same portions as
in Comparative Example 1 described above will be omitted to avoid
duplication.
[0310] Reference numeral 521 denotes a gate valve formed in a side
wall of a vacuum vessel 501. A substrate G is loaded/unloaded
through this gate valve 521. A hollow non-grounded electrode 502 is
placed inside an insulator 505 which is positioned in the upper
portion of the vacuum vessel 501. A large number of gas supply
holes 502b about 0.5 mm in diameter are formed in a lower surface
(front surface) 502a of this non-grounded electrode 502 at
intervals of 10 to 15 mm to face a plasma generation space 510. An
opening 502c for a discharge gas is formed in the upper surface of
the non-grounded electrode 502. A discharge gas supply pipe 511b is
connected to this opening 502c of the non-grounded electrode 502
via a connecting member 523. This discharge gas supply pipe 511b
supplies, e.g., monosilane gas (SiH.sub.4) into the non-grounded
electrode 502. A power distributor 525 for branching the output
from a high-frequency power supply into a plurality of portions is
placed on the non-grounded electrode 502.
[0311] A glow discharge plasma is generated in the vacuum vessel
501 by the non-grounded electrode 502 and a grounded electrode 504.
The non-grounded electrode 502 is a rectangular or square
plate-like member (about 500 mm.times.500 mm to about 1,000
mm.times.1,000 mm and 60 mm in thickness) and made of stainless
steel. This non-grounded electrode 502 is supplied with necessary
power by a power supply system composed of a high-frequency power
supply 507, an impedance matching circuit 506, and the power
distributor 525 described above.
[0312] As shown in FIG. 37, the power distributor 525 is composed
of a columnar connection port 526 placed in the center, four
band-like branched ports 527 radially extending from the connection
port 526, and four columnar members 528a, 528b, 528c, and 528d.
Reference numerals 509a, 509b, 509c, and 509d in FIG. 37 denote
power supply portions. A gas in the vacuum vessel 501 is exhausted
through the exhaust pipe 512 by the vacuum pump 513. A substrate
514 is placed on the grounded electrode 504 by opening the gate
valve 521 and heated to a predetermined temperature by a substrate
heater 503 and a substrate heater power supply 515.
[0313] The above apparatus 500 was used to form a-Si films on glass
substrates. The film formation conditions of Comparative Example 2
were as follows.
[0314] Substrate dimensions: 350 mm.times.450 mm.times.1 mm
[0315] Substrate temperature: 200.degree. C.
[0316] Pressure: 0.2 Torr
[0317] Process gas: monosilane (SiH.sub.4)
[0318] Gas flow rate: 100 sccm
[0319] Electrode-to-substrate distance: 20 mm
[0320] Electrode dimensions: 500 mm.times.500 mm.times.50 mm
[0321] Electrode material: stainless steel (JIS SUS304)
[0322] Power-supply frequency: 70 MHz
[0323] Target film thickness: 1,000 nm
[0324] As a consequence, a-Si films having a variation of .+-.50%
with respect to the target film thickness were obtained.
[0325] First, the gate valve 521 was opened to place the substrate
G on the grounded electrode 504, and the gate valve 521 was closed.
The vacuum pump 513 was driven to evacuate the vacuum vessel 501 to
an internal pressure of about 1.times.10.sup.-7 Torr. While the
power supply amount from the power supply 515 was controlled, the
substrate G was heated to a predetermined target temperature by the
heater 503. A predetermined amount of monosilane gas was supplied
through the discharge gas supply pipes 511a and 511b, and the
internal pressure of the vacuum vessel was held at 0.05 to 0.5
Torr. A high-frequency voltage was applied to the non-grounded
electrode 502 by the power supply 507, thereby generating a glow
discharge plasma between the non-grounded electrode 502 and the
grounded electrode 504.
[0326] When the monosilane gas was formed into a plasma, radicals
such as SiH.sub.3, SiH.sub.2, and SiH existing in the plasma
diffused by a diffusion phenomenon. These radicals were adsorbed in
and deposited on the surface of the substrate G to form an a-Si
film.
COMPARATIVE EXAMPLE 3
[0327] In Comparative Example 3, a parallel plate plasma CVD
apparatus 600 shown in FIGS. 38 and 39 was used. This apparatus 600
is known by reference 2 cited previously.
[0328] As Comparative Example 3, the apparatus described in
reference 2 will be explained below with reference to FIGS. 38 and
39.
[0329] A high-frequency oscillator 631 is connected to an impedance
matching circuit 606 via a high-frequency power amplifier 632. The
high-frequency oscillator 631 and the high-frequency amplifier 632
constitute a high-frequency power supply. A vacuum current supply
terminal 633 is formed on a wall surface 634 of a vacuum vessel
601. A coaxial cable 608 extending through this supply terminal 633
connects a non-grounded electrode 602 and the impedance matching
circuit 606. The wall surface 634 of the vacuum vessel 601 is
grounded. A substrate G is placed on the wall surface 634. When a
gas is supplied into the vacuum vessel 601 and a high frequency is
applied between the electrode 502 and the wall surface 634, a glow
discharge plasma is generated between them. The non-grounded
electrode is supplied with high-frequency power from the power
supply 631 via the vacuum current supply terminal 633, the coaxial
cable 608, and the impedance matching circuit 606. The frequency of
the high-frequency wave oscillated by the power supply 631 is 70
MHz.
[0330] As shown in FIG. 39, an H-shaped feeder 635 is formed on the
rear surface (the surface not in contact with the plasma generation
space) of the electrode 602. Feeding points 609a, 609b, 609c, and
609d are formed at the four corners of this feeder 635.
[0331] The above apparatus 600 was used to form a-Si films on glass
substrates. The film formation conditions of Comparative Example 3
were as follows.
[0332] Substrate dimensions: 350 mm.times.450 mm.times.1 mm
[0333] Substrate temperature: 200.degree. C.
[0334] Pressure: 0.2 Torr
[0335] Process gas: monosilane (SiH.sub.4)
[0336] Gas flow rate: 100 sccm
[0337] Electrode dimensions: 470 mm.times.570 mm
[0338] Electrode material: stainless steel (JIS SUS304)
[0339] Power-supply frequency: 70 MHz
[0340] Target film thickness: 1,000 nm
[0341] As a consequence, a-Si films having a variation of .+-.18%
with respect to the target film thickness were obtained.
[0342] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *