U.S. patent application number 09/458264 was filed with the patent office on 2001-06-14 for dual-die integrated circuit package.
Invention is credited to KOVATS, JULIUS A., LAM, KEN M..
Application Number | 20010003375 09/458264 |
Document ID | / |
Family ID | 23820062 |
Filed Date | 2001-06-14 |
United States Patent
Application |
20010003375 |
Kind Code |
A1 |
KOVATS, JULIUS A. ; et
al. |
June 14, 2001 |
DUAL-DIE INTEGRATED CIRCUIT PACKAGE
Abstract
A dual-die integrated circuit package having two integrated
circuit chips "flip chip" attached to each other and with one of
the chips being aligned at a specified angle in relation to the
other chip to allow access to bonding pads on the surface of each
chip for wirebonding connection into the chip package. In a first
embodiment, the two chips are rectangular in shape and are aligned
at an angle of 90 degrees with respect to each other, thus allowing
the end portions of the bottom chip to be accessible for connection
into the chip package. Other embodiments maintain the chips at
angles of less than 90 degrees, such that corner portions of each
chip are accessible for connection into the chip package. The
invention allows two identically constructed chips to be used for
doubling or even greater multiplication of the functionality or
memory of the IC package, while still using the same package
footprint as for a single chip. Also, being able to use two chips
that are identically constructed from a wafer fabrication
standpoint provides the advantage of requiring only one IC design
process.
Inventors: |
KOVATS, JULIUS A.; (MANITOU,
CO) ; LAM, KEN M.; (COLORADO SPRINGS, CO) |
Correspondence
Address: |
THOMAS SCHNECK
P O BOX 2-E
SAN JOSE
CA
951090005
|
Family ID: |
23820062 |
Appl. No.: |
09/458264 |
Filed: |
December 9, 1999 |
Current U.S.
Class: |
257/685 ;
257/676; 257/686; 257/692; 257/696; 257/737; 257/777; 257/E23.052;
438/109; 438/123; 438/613 |
Current CPC
Class: |
H01L 2924/00014
20130101; H01L 23/49575 20130101; H01L 2224/48247 20130101; H01L
2224/05599 20130101; H01L 24/48 20130101; H01L 2224/48091 20130101;
H01L 2924/30107 20130101; H01L 2224/32145 20130101; H01L 2924/181
20130101; H01L 2225/06562 20130101; H01L 2224/16145 20130101; H01L
2924/14 20130101; H01L 2224/85399 20130101; H01L 2224/48091
20130101; H01L 2924/00014 20130101; H01L 2924/30107 20130101; H01L
2924/00 20130101; H01L 2924/181 20130101; H01L 2924/00012 20130101;
H01L 2224/85399 20130101; H01L 2924/00014 20130101; H01L 2224/05599
20130101; H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L
2224/45015 20130101; H01L 2924/207 20130101; H01L 2924/00014
20130101; H01L 2224/45099 20130101; H01L 2924/14 20130101; H01L
2924/00 20130101 |
Class at
Publication: |
257/685 ;
257/676; 257/686; 257/692; 257/696; 257/737; 257/777; 438/123;
438/109; 438/613 |
International
Class: |
H01L 021/44; H01L
023/495; H01L 029/40; H01L 023/52; H01L 021/48 |
Claims
1. A dual-die integrated circuit package comprising: a flat
die-attachment surface having a plurality of external electrical
contacts for connecting the package to external circuits, a first
IC chip having a first surface and a second surface, and having a
plurality of bonding pads on the first surface, the second surface
being mounted on the die-attachment surface, a second IC chip
having a first surface and a second surface, and being mechanically
and electrically connected by its second surface to the first
surface of the first IC chip, wherein the second IC chip is aligned
at a specified angle in relation to the first IC chip in a covering
relation, with bonding pads on the first surface of the first IC
chip remaining uncovered and electrically connected to the external
electrical contacts of the die-attachment surface, and an
encapsulant material enclosing the first and second IC chip and
covering a portion of the die-attachment surface such that the
plurality of electrical contacts remain at least partially
uncovered.
2. The integrated circuit package of claim 1, wherein the first and
second IC chips have identical wafer fabrication constructions.
3. The integrated circuit package of claim 1, wherein the first and
second IC chips have a rectangular shape.
4. The integrated circuit package of claim 3, wherein the specified
angle of alignment is 90 degrees.
5. The integrated circuit package of claim 1, wherein the specified
angle of alignment is less than 90 degrees.
6. The integrated circuit package of claim 1, wherein the second
surface of the second IC chip and the first surface of the first IC
chip include a series of solder bumps to enable electrical and
mechanical connection between the second IC chip and the first IC
chip.
7. The integrated circuit package of claim 1, wherein the
die-attachment surface is a part of a leadframe, with a plurality
of leads being disposed on a perimeter of the die-attachment
surface.
8. The integrated circuit package of claim 7, wherein the plurality
of leads are electrically connected to the first and second IC
chips by wirebond connection between the leads and the plurality of
bonding pads on the first surface of the first IC chip.
9. The integrated circuit package of claim 1, wherein the first IC
chip is mounted to the die-attachment surface by epoxy.
10. The integrated circuit package of claim 1, wherein the second
IC chip is larger than the first IC chip and is mounted on top of
the first IC chip.
11. The integrated circuit package of claim 1, wherein the
die-attachment surface is a part of a ball grid array type
structure and includes a series of solder bumps on a bottom surface
of the chip package.
12. The integrated circuit package of claim 6, wherein the series
of solder bumps are arranged in a diagonal pattern.
13. The integrated circuit package of claim 6, wherein the series
of solder bumps are arranged in a "X-shaped" pattern.
14. A dual-die integrated circuit package comprising: a leadframe
having a flat die-attachment surface with a plurality of leads
disposed on a perimeter thereof, a pair of IC chips, each having a
first surface and a second surface, a first IC chip of the pair of
IC chips having a plurality of bonding pads on the first surface
and being mounted on its second surface to the flat die-attachment
surface of the leadframe, and a second IC chip of the pair of IC
chips being mounted on its second surface to the first surface of
the first IC chip, wherein the second surface of the second IC chip
and the first surface of the first IC chip includes a series of
solder bumps, the first and second IC chips being electrically and
mechanically coupled by solder bumping and reflow of the solder
bumps, wherein the second IC chip is aligned at a specified angle
in relation to the first IC chip, with at least one of the
plurality bonding pads on the first surface of the first IC chip
remaining uncovered, a plurality of wirebond leads electrically and
mechanically coupling the plurality of leads and the plurality of
bonding pads on the first surface of the first IC chip, and an
encapsulant material enclosing the first and second IC chips and
covering a portion of the die-attachment surface such that the
plurality of leads of the leadframe remain at least partially
uncovered.
15. The integrated circuit package of claim 14, wherein the first
IC chip and the second IC chip have identical wafer fabrication
constructions.
16. The integrated circuit package of claim 14, wherein the first
IC chip and the second IC chip have a rectangular shape and wherein
the specified angle of alignment is 90 degrees.
17. The integrated circuit package of claim 14, wherein the
specified angle of alignment is less than 90 degrees.
18. The integrated circuit package of claim 14, wherein the second
IC chip is larger than the first IC chip and is mounted on top of
the second IC chip.
19. A dual-die integrated circuit package comprising: a flat
die-attachment surface with a plurality of electrical contacts
disposed thereon, a first IC chip having a first surface and a
second surface wherein a plurality of bonding pads are arranged on
the first surface and wherein the second surface is mounted onto
the die-attachment surface, a second IC chip having a first surface
and a second surface and having an identical wafer fabrication
construction as that of the first IC chip, wherein the second
surface of the second IC chip and the first surface of the first IC
chip include a series of solder bumps, the series of solder bumps
being connected by solder bumping and reflow to electrically and
mechanically couple the first IC chip and the second IC chip,
wherein the second IC chip is aligned at a specified angle in
relation to the first IC chip leaving a plurality of bonding pads
on the first surface of the first IC chip uncovered, means for
electrically coupling the plurality of electrical contacts on the
die-attachment surface and the plurality of bonding pads on the
first surface of the first IC chip, and an encapsulant material
enclosing the first and second IC chips and covering a portion of
the die-attachment surface such that the plurality of electrical
contacts remain at least partially exposed.
20. The integrated circuit package of claim 20, wherein the
die-attachment surface constitutes a part of a leadframe, with a
plurality of leads being disposed on a perimeter of the
die-attachment surface.
21. A method of forming a dual-die integrated circuit package
comprising: arranging a plurality of solder bumps on a first
surface of a first IC chip and on a first surface of a second IC
chip, the first and second IC chips having a plurality of bonding
traces arranged thereon, arranging a series of routing traces on
the first surfaces of the first and second IC chips, the routing
traces interconnecting the solder bumps and the bonding pads,
adding a passivation layer over the first surfaces of each of the
first and second chips, the solder bumps and the bonding pads
remaining exposed through the passivation layer, aligning the
second chip at a specified angle in relation to the first chip,
connecting the second chip to the first chip through the solder
reflow attachment of the solder bumps of each of the chips,
attaching the first chip to a flat die-attachment surface being in
mechanical and electrical communication with a plurality of
electrical contacts, and covering the first and second chips and an
inner part of the die-attachment surface with an encapsulant
material.
22. The method of forming a dual-die integrated circuit package, as
in claim 21, wherein the step of connecting the second chip to the
first chip is carried out by using an anisotropic epoxy.
Description
TECHNICAL FIELD
[0001] This invention relates to integrated circuit packages and
more particularly to integrated circuit packages having multiple
semiconductor chips (dies).
BACKGROUND ART
[0002] A chip package is used to protect integrated circuit chips
from contamination and abuse and is used to provide a durable and
substantial electrical lead system for connecting integrated
circuit chips onto an external printed circuit board or directly
into a electronic product. There are numerous advantages to
providing a multi-chip integrated circuit (IC) package over
single-chip carriers. By placing multiple chips directly on a
substrate that provides low-inductance and low-capacitance
connections between the chips and the signal/power lines, and that
supplies a very dense interconnection network, packaging density
and system performance can be improved. The multi-chip package
minimizes the chip-to-chip spacing and reduces the inductive and
capacitive discontinuities between the chips mounted on the
substrate by replacing the die-wirebond-pin-board-pin-wirebond-die
path with a much superior die-bump-interconnect-bump-die path.
Additionally, narrower and shorter wires on the ceramic substrate
have much less capacitance and inductance than the printed circuit
board interconnections. It is often advantageous to stack multiple
identical IC chips into the same chip package in order to increase
memory without using valuable space on the printed circuit
board.
[0003] With reference to FIG. 6, in the prior art, one of the
common methods of combining IC chips into a single package is to
use a stacked die IC package 50 in which the top IC chip 16 is
smaller than the bottom IC chip 14 in order to allow access on the
bottom IC chip 14 for wirebonding leads 26. If the two IC chips are
the same size, as in the stacked IC die package 60 of FIG. 7, then
the top IC chip 16 must be offset from the bottom IC chip 14 in
order to allow wirebonding access to the bottom IC chip 14. This
limits access for the wirebonding leads 26 to one or two sides of
the package, which is frequently not practical for assembly.
Another common method of combining IC chips of the same size, that
is known in the prior art, involves placing one of the IC chips
underneath the leadframe in a package, as shown in FIG. 8. In the
IC package 70 of FIG. 8, the top IC chip 16 is stacked on top of
the leadframe 18 of the chip package while the bottom IC chip 14 is
attached underneath the leadframe 18. The disadvantage to the
die-underneath method of FIG. 8 is that the chips must be mirror
images of each other, thereby requiring two complete IC fabrication
steps.
[0004] U.S. Pat. No. 5,399,898 to Rostoker discloses multi-chip,
multi-tier semiconductor package arrangements based upon single and
double-sided flip chips. These arrangements are based on a stacked
structure similar to FIGS. 6 and 7 noted above. U.S. Pat. No.
5,656,553 to Leas et al. discloses a fabrication method and
resultant monolithic module comprising a plurality of stacked
planar extending arrays of integrated circuit chips. The stacked
die arrangement shown in the '553 patent uses edge connections to
connect the upper die to the lower die. While this method of
stacking multiple IC die addresses the case where two identical die
are stacked, the method does not allow for routing flexibility, as
the circuit routing is vertical from top to bottom and if there is
any crossover, the chip package will not operate properly.
[0005] It is the object of the present invention to provide a
multi-chip IC package having two or more similar semiconductor IC
chips.
[0006] It is a further object of the invention to provide a
multi-chip IC package having two or more similar IC chips that does
not limit wirebonding to one side of the chip and does not require
two complete IC fabrication steps.
[0007] It is still a further object of the invention to provide a
multi-chip IC package that allows for flexibility in circuit
routing.
SUMMARY OF THE INVENTION
[0008] The above objects have been met by a dual-die integrated
circuit package having two chips (dies) which can be identically
constructed from a wafer fabrication processing standpoint and are
"flip chip" attached to each other using standard solder bumping
and solder reflow technology. The first chip is aligned at a
specified angle in relation to the second chip such that at least
one of the bonding pads on the surface of each of the chips remain
exposed for connection into a standard chip package. In one
embodiment of the invention, two rectangular chips are aligned such
that one chip is rotated at an angle of 90 degrees in relation to
the other chip, such that the non-overlapping surfaces are exposed
to enable chip package assembly. In another embodiment of the
invention, the chips are aligned at an angle of less than 90
degrees such that at least a small portion, such as a corner, of
each chip is exposed for chip package assembly. This embodiment
would be preferable for the case when the two chips are of a square
shape. In another embodiment of the invention, the two chips are of
different sizes, as a larger chip is arranged on top of a smaller
chip and is rotated at an angle such that the lower chip has at
least some minimum area accessible for assembly. This ability to
mount a larger IC chip over a smaller IC chip would be valuable to
an IC manufacturer who controls the design of the smaller die, but
purchases the larger die from another source.
[0009] The present invention allows for doubling the functionality
or memory of a chip package while using the same package footprint
as a single chip and using only one IC design. The integrated
circuit package of the present invention allows for flexibility in
wirebonding and routing and can be implemented in a single IC
fabrication step. The present invention allows IC manufacturers to
develop products with double the memory or functionality in a much
faster time frame by providing the ability to use multiple
identical chips in the same package without having to make
significant design changes to the chips.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] FIG. 1 is a top view of a first embodiment of the dual-die
integrated circuit package of the present invention, with the
encapsulant material removed.
[0011] FIG. 2 is a perspective view of the two chips showing the
interconnection between the two chips.
[0012] FIG. 3 is a top view of the dual-die integrated circuit
package of FIG. 1 showing the two chips being attached to a
leadframe.
[0013] FIG. 4 is a side view of the dual-die integrated circuit
package of FIG. 1.
[0014] FIG. 5 is a top view of a second embodiment of the dual-die
integrated circuit package of the present invention, with the
encapsulant material removed.
[0015] FIG. 6 is a side view of a first stacked die IC package, as
known in the prior art.
[0016] FIG. 7 is a side view of a second stacked die IC package, as
known in the prior art.
[0017] FIG. 8 is a side view of a die-underneath IC package, as
known in the prior art.
BEST MODE FOR CARRYING OUT THE INVENTION
[0018] With reference to FIG. 1, a first embodiment of the
integrated circuit (IC) package 10 of the present invention is
shown to include a top IC chip 16 and a bottom IC chip 14 which are
aligned in a 90 degree relation with respect to each other. The
chips 14, 16 are arranged on a flat die-attachment surface 12 of a
leadframe 18. The leadframe 18 is made of a single piece of metal
and extends from the die-attachment surface 12 to a plurality of
outer leads 20 that are arranged around the perimeter of the IC
package 10 and which extend downward for use in mounting the IC
package 10 to an external printed circuit board.
[0019] With reference to FIG. 2, the top IC chip 16 is mechanically
and electrically connected to the bottom IC chip 14 using a "flip
chip" method with standard solder bumping and solder reflow
technology. The connections between the chips 16 and 14 are made by
solder bumps 22 on each of the chips which can be arranged in a
diagonal or in an "x" pattern. The solder bumps 22 can be made as
part of the original fabrication process or can be added afterwards
using redistribution of electrical traces. FIG. 2 illustrates the
case where the process of redistribution is used. On the original
fabricated chip layer 23 of each of the chips 14 and 16, there are
a plurality of bonding pads 49, shown in dashed lines, arranged
around the perimeter of the chips. In FIG. 2, the bonding pads 49
are arranged on the bottom side 17 of the top chip 16 and on the
top side 15 of the bottom chip 14. The bonding pads 49 are
electrical terminals used for connecting the chips 14, 16 into a
chip package. Each of the bonding pads 49 correspond to a
particular circuit in the chip, such as power input, ground, memory
address, etc. In order to carry out the redistribution process,
first, a series of solder pads 22 are arranged in a diagonal
pattern on the surface of the chip layer 23. If only a few
connections are required, it is preferable that the solder bumps be
made at the corners of the chips in order to minimize the number of
solder bumps in the middle part of a chip, since that is where the
memory array and other sensitive circuitry are located.
[0020] Next, routing traces 24 are then provided on the surface of
each of the chips 14, 16 in order to connect the circuitry from the
bonding pads 49 to the solder bumps 22. Circuits that are common to
both chips 14, 16, such as ground, power input, and the clock
signal for example, would be routed on each chip from the
particular bonding pad corresponding to that circuit to a
particular solder bump on each chip, the particular solder bumps on
each chip being aligned together for interconnection. Circuits that
are not common to each chip, such as chip enable for example, would
not be routed to the solder bumps. The solder bumps 22 can also
function as jumpers in order to connect circuits on the bottom chip
14 with circuits on the top chip 16 when the two chips are
attached. Other routing traces may be added on the surface of the
chip in order to connect the solder bumps with particular bonding
pads which will be used for connecting the chips into the chip
package. Then, a new passivation layer 21 is provided over the
surfaces 15, 17 of the chips 14, 16 and the solder bumps 22 are
brought through the passivation layer 21 to be exposed for
interconnection. Some of the wire bonding pads 49, are also brought
through the passivation layer 21, and will constitute the exposed
bonding pads 29 used for connection of the chip into the chip
package.
[0021] The two chips 14, 16 are then aligned at a 90 degree angle
such that the solder bumps 22 are lined up for interconnection when
the top chip 16 is flipped over on top of the bottom chip 14, as
shown by the arrow 11. Generally, it is usually preferable to
interconnect the two chips 14, 16 before placing the chips on the
die-attachment surface of the chip package. This is because the
melting temperature needed to reflow the solder bumps between the
chips is generally higher than the temperature needed to attach the
chips to the die-attachment surface. Therefore, if the bottom chip
were attached to the die-attachment surface first, that attachment
might become compromised when the higher temperature required to
attach the top chip to the bottom chip is applied to the package.
Other methods of connecting the two chips together can include the
use of anisotropic ("Z-axis") epoxy or other conductive solder
metalizations.
[0022] With reference to FIG. 3, the bottom chip 14 of the attached
chips is secured to the die-attachment surface 12 of the leadframe
by an epoxy material. Because the two rectangular IC chips 14 and
16 are aligned at a 90 degree angle with respect to each other, the
exposed bonding pads 29 on the bottom chip 14 are accessible for
wirebond attachment into the chip package 10. Wire bonding leads 26
are used to attach the exposed bonding pads 29 to the inner leads
19 of the leadframe. The inner leads 19 extend outward to form the
outer leads 20 which are used to provide connection to other
external circuits which provide the power and other input and
output signals to the chip package 10.
[0023] With reference to FIG. 4, the die-attachment surface 12 of
the leadframe 18 supports the bottom IC chip 14 which is wirebonded
26 to the leadframe 18 and leads 20. The top IC chip 16 is
connected by the solder bumps 22 to the bottom IC chip 14. Because
the chips are rotated 90 degrees with respect to one another the
portion on either end of the bottom IC chip is exposed for
connection of the wirebond leads 26. An encapsulant material 28 is
then used to cover the top of the IC package 10, including the two
chips 14, 16 and the top of the die attachment surface 12, such
that the leads 20 of the leadframe 18 remain at least partially
exposed. In FIG. 4, the encapsulant material 28 has been cut away
so that the interior of the IC package 10 can be viewed, but in the
production of the chip package the encapsulant material 28 would
completely cover the chips 14, 16. The encapsulant material 28 is
preferably an epoxy overcoat or plastic molding.
[0024] With reference to FIG. 5, another embodiment of the present
invention is shown. The IC chip package 30 of the second embodiment
shows the top IC chip 36 being aligned with the bottom IC chip 34
at an angle of less than 90 degrees. This configuration is useful
for IC chips that are square, but can also be used for rectangular
chips. By aligning the top IC chip 36 at an offset angle from the
bottom IC chip 34, an area 38 on the bottom chip 34 is exposed for
wirebonding of the chip 34 to the leads 40.
[0025] The present invention can also be implemented with two chips
of differing sizes. In another embodiment similar to that shown in
FIG. 5, the top IC chip 36 would be larger than the bottom IC chip.
Because the top IC chip 36 is rotated in relation to the bottom IC
chip 34, even though the larger IC chip 36 is on top, the bottom
chip 34 still has an area 38 exposed to allow accessibility for
wirebonding. This would be valuable to a manufacturer who controls
the design of the smaller IC chip but purchases the larger IC chip
from a second source.
[0026] Although the dual-die IC package of the present invention
has been described above in terms of being a PLCC (Plastic Leadless
Chip Carrier) type of package, the dual-die IC chip package of the
present invention can also be implemented with other types of
package designs known in the art, such as ball grid arrays which
use solder bumps on the bottom of the package rather than leads in
order to connect the chip package to a printed circuit board. In
the case of a ball grid array package and other types of package
designs, the method of constructing the chip package is the same as
described above, except for the particular manner in which the
electrical connections are made between the chip package and an
external circuit. The dual-die IC package of the present invention
can also be a thin package type, such as a flat pack, or small
outline IC (SOIC), by using the same construction techniques
described above.
* * * * *