U.S. patent application number 09/733969 was filed with the patent office on 2001-05-17 for semiconductor device, manufacturing method thereof and aggregate type semiconductor device.
Invention is credited to Kawano, Hiroshi, Ohuchi, Shinji, Shiraishi, Yasushi, Yamada, Etsuo.
Application Number | 20010001217 09/733969 |
Document ID | / |
Family ID | 13442867 |
Filed Date | 2001-05-17 |
United States Patent
Application |
20010001217 |
Kind Code |
A1 |
Ohuchi, Shinji ; et
al. |
May 17, 2001 |
Semiconductor device, manufacturing method thereof and aggregate
type semiconductor device
Abstract
A resin sealing type semiconductor device, a manufacturing
method thereof and a packaging structure thereof are capable of
downsizing the semiconductor device and attaining high-density
packaging. For this, the resin sealing type semiconductor device
with leads exposed in an outer surface, is provided with spot leads
adhered to a circuit forming surface of a semiconductor element
with an insulating adhesive tape interposed therebetween, each
independently regularly arrayed, and exposed to outside with the
semiconductor element disposed inside.
Inventors: |
Ohuchi, Shinji; (Tokyo,
JP) ; Shiraishi, Yasushi; (Tokyo, JP) ;
Kawano, Hiroshi; (Tokyo, JP) ; Yamada, Etsuo;
(Tokyo, JP) |
Correspondence
Address: |
RABIN & CHAMPAGNE, PC
1101 14TH STREET, NW
SUITE 500
WASHINGTON
DC
20005
US
|
Family ID: |
13442867 |
Appl. No.: |
09/733969 |
Filed: |
December 12, 2000 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09733969 |
Dec 12, 2000 |
|
|
|
08806614 |
Feb 26, 1997 |
|
|
|
Current U.S.
Class: |
257/773 ;
257/E23.02; 257/E23.021; 257/E23.133; 438/123 |
Current CPC
Class: |
H01L 2224/40991
20130101; H01L 2924/01004 20130101; H01L 24/37 20130101; H01L
2224/13 20130101; H01L 2924/18161 20130101; H01L 2924/01005
20130101; H01L 2924/01076 20130101; H01L 24/02 20130101; H01L
2224/13099 20130101; H01L 2224/16 20130101; H01L 2224/40993
20130101; H01L 24/10 20130101; H01L 23/3114 20130101; H01L 24/13
20130101; H01L 24/40 20130101; H01L 2924/01033 20130101; H01L
2924/1816 20130101; H01L 2224/40479 20130101; H01L 2924/01082
20130101; H01L 2224/0401 20130101; H01L 2924/07802 20130101; H01L
2924/181 20130101; H01L 23/3185 20130101; H01L 2924/01015 20130101;
H01L 2924/01078 20130101; H01L 2924/01006 20130101; H01L 2924/014
20130101; H01L 2924/07802 20130101; H01L 2924/00 20130101; H01L
2224/13 20130101; H01L 2924/00 20130101; H01L 2924/181 20130101;
H01L 2924/00 20130101 |
Class at
Publication: |
257/773 ;
438/123 |
International
Class: |
H01L 021/44; H01L
021/48; H01L 023/52; H01L 029/40; H01L 021/50; H01L 023/48 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 27, 1996 |
JP |
8-70829 |
Claims
What is claimed is:
1. A semiconductor device comprising: a semiconductor element
formed with a semiconductor circuit; an insulating layer composed
of an insulating adhesive tape provided on an upper layer of a
surface formed with said semiconductor circuit; a plurality of spot
leads respectively electrically independent and regularly disposed
on an upper layer of said insulating layer, the surfaces of which
are exposed to outside; and a mold resinous portion formed on side
surfaces of at least said insulating layer and said semiconductor
element.
2. A semiconductor device according to claim 1, further comprising:
a metal bump provided on a portion provided with no said insulating
layer between said spot lead and the surface formed with said
semiconductor circuit.
3. A semiconductor device according to claim 1, wherein at least
the exposed-to-outside surface of said spot lead is coated with
metal plating.
4. A semiconductor device according to claim 1, wherein a support
portion composed of the same member as that of said spot lead but
independent of said spot lead, is provided on the upper layer of
said insulating layer.
5. A semiconductor device according to claim 4, wherein said spot
lead and said support portion are independent of each other by
cutting a lead frame formed in continuation from said spot
lead.
6. A semiconductor device according to claim 2, wherein said spot
lead includes an extension lead and is electrically connected to
said semiconductor element through said metal bump at a front edge
or a midway portion of said extension lead.
7. A method of manufacturing a resin sealing type semiconductor
device, comprising: a step (a) of fixedly adhering a support
portion in a lead frame to a plurality of spot leads leastwise at
one surfaces thereof by use of an insulating adhesive tape; and a
step (b) of separating said plurality of spot leads from said lead
frame.
8. A method of manufacturing a resin sealing type semiconductor
device, comprising: a step (a) of fixedly adhering a support
portion in a lead frame to a plurality of spot leads after metal
plating at one surfaces thereof by use of an insulating adhesive
tape; a step (b) of separating said plurality of spot leads from
said lead frame; and a step (c) of adhering a semiconductor element
to the other surface of said adhesive tape, and resin-sealing said
semiconductor element with a mold resin.
9. A semiconductor device comprising: a semiconductor element
formed with a semiconductor circuit; an insulating layer composed
of an insulating adhesive tape provided on an upper layer of a
surface formed with said semiconductor circuit; a plurality of spot
leads respectively electrically independent and regularly disposed
on an upper layer of said insulating layer, with their surfaces
exposed to outside and with their front edges extending downward in
an L-shape from outside the side portion of said semiconductor
element; and a mold resinous portion formed on side surfaces of at
least said insulating layer and said semiconductor element.
10. A method of manufacturing a semiconductor device, comprising: a
step (a) of fixedly adhering one surfaces of a plurality of spot
leads in a lead frame by use of an insulating adhesive tape; a step
(b) of adhering said semiconductor element to the other surface of
said adhesive tape and sealing said semiconductor element with a
resin; and a step (c) of separating said plurality of spot leads
from said lead frame and bending front edges of said spot leads
downward in an L-shape from outside the side portion of said
semiconductor element.
11. A method of packaging a semiconductor device, comprising: a
step of disposing, in a side-by-side relationship, a plurality of
semiconductor devices including a plurality of L-shaped leads
exposed to outside from upper surfaces of semiconductor elements
within mold resinous portions, front edges of which extend downward
from outside the side portions of said semiconductor elements, and
of connecting said L-shaped leads to each other; and a step of
connecting connecting portions of said L-shaped leads to the same
foot pattern provided on a wiring board.
12. An aggregate type semiconductor device comprising: a plurality
of semiconductor devices including a plurality of L-shaped leads
exposed to outside from upper surfaces of semiconductor elements
within mold resinous portions, front edges of which extend downward
from outside the side portions of said semiconductor elements,
wherein said plurality of semiconductor devices are disposed in a
face-to-face relationship so that front edges of said L-shaped
leads face to each other, and the front edges of said L-shaped
leads are connected to each other.
13. An aggregate type semiconductor device according to claim 12,
wherein resin packages are each composed of a mold resin in said
plurality of semiconductor devices, and undersurfaces of said resin
packages are fixed to each other with an adhesive agent.
14. An aggregate type semiconductor device comprising: a plurality
of semiconductor devices including a plurality of L-shaped leads
exposed to outside from upper surfaces of semiconductor elements
within mold resinous portions, front edges of which extend downward
from outside the side portions of said semiconductor elements,
wherein said plurality of semiconductor devices are laminated so
that front edges of said L-shaped leads are set mutually in the
same direction.
15. An aggregate type semiconductor device according to claim 14,
wherein the front edge of said L-shaped lead of said upper
semiconductor device is connected to a bent portion of said
L-shaped lead of said lower semiconductor device in said plurality
of laminated semiconductor devices.
16. An aggregate type semiconductor device according to claim 14,
wherein resin packages are each composed of a mold resin in said
plurality of semiconductor devices, and an undersurface of the
resin package of said upper semiconductor device is fixed to an
upper surface of the resin package of said lower semiconductor
device by use of an adhesive agent.
Description
BACKGROUND OF THE INVENTION
1. The present invention relates to a resin sealing type
semiconductor device, a manufacturing method thereof and a
packaging structure thereof.
2. In recent years, with rapid advancements of IC cards and memory
cards as well, a resin sealing type semiconductor device mounted in
the card has been required to be made thinner. In response to this
demand, a good number of methods of thinning the semiconductor
device have been proposed.
3. One of those proposals is concerned with a structure in which
the upper surface of a chip support and an undersurface of a
semiconductor element are exposed as disclosed in, e.g., Japanese
Patent Application No. 6-273262. According to this structure, a
whole thickness of a package can be set on the order of 0.5 mm.
4. Further, as disclosed in Japanese Patent Laid-Open Publication
No. 5-309983 (Japanese Patent Application No. 4-119133), a
technique for reducing a packaging area is attained by bending a
lead in an L-shape.
5. In the prior art resin sealing type semiconductor device
described above, however, even when the package becomes thinner,
the packaging area remains unchanged. That is, the lead extends
long outside a mold resin, and hence an area of packaging on a
printed circuit board is considerably wide as compared with the
semiconductor element. This configuration is insufficient for
actualizing high-density packaging.
6. The present invention aims at downsizing the resin sealing type
semiconductor device and attaining the high-density packaging as
well as at obviating the problems described above.
SUMMARY OF THE INVENTION
7. The present invention is:
8. (1) An upper layer of a surface formed with a semiconductor
circuit is provided with an insulating layer composed of an
insulating adhesive tape. A plurality of spot leads each
electrically independent and regularly disposed are provided on the
upper layer of the insulating layer. Further, a mold resinous
portion is provided on side surface of at least of the insulating
layer and the semiconductor element, thereby obtaining a resin mold
package structure. Based on such a structure, it is feasible to
downsize a resin sealing type semiconductor device and to attain
high-density packaging-thereof.
9. (2) Moreover, in the structure of the item (1), a metal bump is
formed in a portion provided with no insulating layer, i.e., with
no insulating tape, whereby an electrical connection between the
semiconductor element and the spot lead is actualized. Thus, the
connection to the semiconductor element involves the use of not
only the metal bump but also the insulating adhesive tape, thereby
relieving stress upon the metal bump due to a difference in terms
of thermal expansion. Then, it is possible to prevent an occurrence
of deterioration and a decline in electric characteristic due to a
fracture, etc. of the metal bump.
10. (3). In the structure of the item (1), an outside exposed
surface of the spot lead is coated with metal plating. This metal
plating may be coated on a surface opposite to the outside exposed
surface, viz., on the surface on the side of the semiconductor
element but should not be applied onto the side surface of the spot
lead. More specifically, no metal plating is applied to a contact
portion, with the mold resinous portion, provided on the side
surface, thereby making it feasible to prevent a crack in the resin
after molding.
11. (4). According to the structure of the item (1), a support
portion composed of the same member as the spot lead but
independent of the spot lead is provided on the upper layer of the
insulating layer. The support portion may be provided so as to
extend through a central portion of the semiconductor device
surface on which the spot leads are arranged. The support portion
is provided in this manner, and the structure of the semiconductor
device can be strengthened, whereby a solid and highly reliable
semiconductor device can be obtained.
12. (5). In the structure of the item (4), the spot lead and the
support portion are provided in a state where these two components
are so formed as to have continuity from each other through a lead
frame, and are independently separated from each other by cutting
the lead frame. Thus, the spot lead and the support portion can be
formed simultaneously by use of the lead frame, and therefore a
semiconductor device strengthened structurewise is obtained with a
less number of steps.
13. (6). According to the structure of the item (2), the spot lead
is provided with an extension lead and is electrically connected to
the semiconductor element through the metal bump at a midway
portion or a front edge of this extension lead. Thus, the spot lead
serving as an external terminal is provided with the extension lead
extending up to a junction area on the semiconductor element as a
wire extends, and the metal bump is connected to this extension
lead. Hence, the external terminals (spot leads) can be formed in
array without depending much on positions of the junction areas for
forming the circuit on the semiconductor element.
14. (7). According to a method of manufacturing a resin sealing
type semiconductor device, to begin with, (a) a support portion in
a lead frame is fixedly adhered to a plurality of spot leads
leastwise at one surfaces thereof by use of an insulating adhesive
tape, and (b) the plurality of spot leads are separated from the
lead frame. Thus, since the support portion and the spot leads are
simultaneously formed, a manufacturing efficiency can be
enhanced.
15. (8). According to a method of manufacturing a resin sealing
type semiconductor device, (a) a support portion in a lead frame is
fixedly adhered to a plurality of spot leads after metal plating at
one surfaces thereof by use of an insulating adhesive tape, (b) the
plurality of spot leads are separated from the lead frame, and (c)
a semiconductor element is adhered to the other surface of the
adhesive tape, and the semiconductor element is resin-sealed with a
mold resin. In this way, the spot lead after the metal plating is
fixedly adhered by use of the insulating adhesive tape and
thereafter punched out (cut out). Therefore, the spot lead is fixed
in a target position and in a predetermines size as well. Further,
the metal plating is previously performed and therefore becomes
unnecessary afterward even in the step of assembling the
semiconductor device.
16. Moreover, the semiconductor element is stably supported by the
adhesive tape, and further the solid resin sealing type
semiconductor device can be obtained with the support portion.
17. (9). An insulating layer composed of an insulating adhesive
tape is provided on an upper layer of a surface formed with the
semiconductor circuit. Provided are a plurality of spot leads
respectively electrically independent and regularly disposed on an
upper layer of the insulating layer, and the structure is that
front edges of the spot leads extend downward in an L-shape from
outside the side portion of the semiconductor element. Also, a mold
resinous portion formed on side-surfaces of at least the insulating
layer and the semiconductor element, thus providing a resin mold
package structure. In this way, the L-shaped leads are exposed to
outside along the side surfaces of the semiconductor element, and
it is therefore possible to enhance a junction strength of solder
for connecting the external terminal to a foot pattern of the
printed circuit board.
18. (10). According to a method of manufacturing a semiconductor
device, (a) one surfaces of a plurality of spot leads in a lead
frame are fixedly adhered by use of an insulating adhesive tape,
(b) the semiconductor element is adhered to the other surface of
the adhesive tape and is sealed with a resin, and (c) the plurality
of spot leads are separated from the lead frame, and front edges of
the spot leads are bent downward in an L-shape from outside the
side portion of the semiconductor element. In this manner, the
formation of the spot lead is not that mold resin sealing is
performed after work-forming the lead frame but that the lead frame
is work-formed after the mold resin sealing step in the assembly of
the semiconductor device. It is therefore feasible to manufacture
the resin sealing type semiconductor device capable of high-density
packaging.
19. (11). According to a method of packaging a semiconductor
device, (a) there are disposed, in a side-by-side relationship, a
plurality of semiconductor devices including a plurality of
L-shaped leads exposed to outside from upper surfaces of
semiconductor elements within mold resinous portions, with their
front edges extending downward from outside the side portions of
the semiconductor elements, and the L-shaped leads are connected to
each other. Then, (b) connecting portions of the L-shaped leads are
connected to the same foot pattern provided on a wiring board.
Accordingly, the two L-shaped leads can be connected together to
the foot pattern on the same printed wiring board.
20. (12). According to a structure of an aggregate type
semiconductor device, there are prepared a plurality of
semiconductor devices including a plurality of L-shaped leads
exposed to outside from upper surfaces of semiconductor elements
within mold resinous portions, front edges of which extend downward
from outside the side portions of the semiconductor elements. Then,
the semiconductor devices are disposed in a face-to-face
relationship so that front edges of the L-shaped leads face to each
other, and the front edges of the L-shaped leads are connected to
each other. That is, the upper resin sealing type semiconductor
device is reversely laminated on the lower resin sealing type
semiconductor device packaged on the board, and the front edges of
the L-shaped leads of the respective resin sealing type
semiconductor devices are connected. Thus, the upper resin sealing
type semiconductor device is reversely laminated on the lower resin
sealing type semiconductor device packaged on the board, and the
front edges of the L-shaped leads of the individual resin sealing
type semiconductor devices are connected. It is therefore possible
to attain high-density packaging on the board.
21. (13). In the aggregate type semiconductor device in the item
(12), resin packages are each composed of a mold resin in the
plurality of semiconductor devices, and undersurfaces of the resin
packages are fixed to each other with an adhesive agent. Thus, the
undersurfaces of the upper and lower resin sealing type
semiconductor devices are fixed to each other by use of the
adhesive agent, and consequently the solid compact aggregate
semiconductor device can be obtained.
22. (14). According to a structure of the aggregate type
semiconductor device, there are prepared a plurality of
semiconductor devices including a plurality of L-shaped leads
exposed to outside from upper surfaces of semiconductor elements
within mold resinous portions, front edges of which extend downward
from outside the side portions of the semiconductor elements. Then,
the plurality of semiconductor devices are laminated so that front
edges of the L-shaped leads are set mutually in the same direction.
That is, the upper semiconductor device is further laminated in the
same direction on the lower semiconductor device. With further
laminations in the same direction, the aggregate type semiconductor
device having more multi-layers is to be obtained. For example, the
semiconductor devices are superposed in three layers by laminating
one more resin sealing type semiconductor device, and the L-shaped
leads thereof are connected, thereby making it feasible to acquire
much-higher-density packaging upon the board.
23. (15). According to the structure of the item (14), in the
plurality of laminated semiconductor devices, the front edge of the
L-shaped lead of the upper semiconductor device is connected to a
bent portion of the L-shaped lead of the lower semiconductor
device. In this way, the upper semiconductor device is laminated in
the same direction on the lower semiconductor device packaged on
the board, and the front edge and the bent portion of the L-shaped
leads of the respective semiconductor devices, are connected to
each other. Hence, the still-higher-density packaging on the board
is attainable simply by laminating the resin sealing type
semiconductor devices sequentially in the same direction.
24. (16). According to the structure of the item (14), resin
packages are each composed of a mold resin in the plurality of
semiconductor devices, and an undersurface of the resin package of
the upper semiconductor device is fixed to an upper surface of the
resin package of the lower semiconductor device by use of an
adhesive agent. Thus, the upper and lower semiconductor devices are
fixed to each other by using the adhesive agent, and the solid
compact semiconductor device can be thereby obtained.
BRIEF DESCRIPTION OF THE DRAWINGS
25. Other objects and advantages of the present invention will
become apparent during the following discussion in conjunction with
the accompanying drawings, in which:
26. FIG. 1 is a sectional view of a resin sealing type
semiconductor device, showing a first embodiment of the present
invention;
27. FIG. 2 is a partial perspective view of the resin sealing type
semiconductor device, showing the first embodiment of the present
invention;
28. FIG. 3 is a sectional view of the resin sealing type
semiconductor device, showing a modified embodiment of the first
embodiment of the present invention;
29. FIG. 4 is a partial perspective view of the resin sealing type
semiconductor device, showing a modified embodiment of the first
embodiment of the present invention;
30. FIG. 5 is an explanatory diagram illustrating a problem
inherent in the resin sealing type semiconductor device;
31. FIG. 6 is a plan view showing a step of manufacturing a lead
frame in the first embodiment of the present invention;
32. FIG. 7 is a perspective view of the principal portion of the
resin sealing type semiconductor device, showing a second modified
embodiment of the first embodiment of the present invention;
33. FIG. 8 is a sectional view of the resin sealing type
semiconductor device, sowing a second embodiment of the present
invention;
34. FIG. 9 is a sectional view of the resin sealing type
semiconductor device, showing a modified embodiment of the second
embodiment of the present invention;
35. FIG. 10 is a partial perspective view of the resin sealing type
semiconductor device, showing a modified embodiment of the second
embodiment of the present invention;
36. FIG. 11 is a sectional view showing a first applied embodiment
of the second embodiment of the present invention;
37. FIG. 12 is a sectional view showing a second applied embodiment
of the second embodiment of the present invention;
38. FIG. 13 is a sectional view showing a third applied embodiment
of the second embodiment of the present invention; and
39. FIG. 14 is a sectional view showing a fourth applied embodiment
of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
40. Embodiments of the present invention will hereinafter be
discussed in detail with reference to the accompanying
drawings.
41. FIG. 1 is a sectional view of a resin sealing type
semiconductor device, showing a first embodiment of the present
invention. FIG. 2 is a partial perspective view of the resin
sealing type semiconductor device.
42. As illustrated in FIGS. 1 and 2, a spot lead 7 is adhered,
together with a semiconductor element support 4, to one surface of
an insulating adhesive tape (which is simply termed an "adhesive
tape") 2. Further, a semiconductor element 1 is adhered, with its
circuit forming surface set in a face-to-face relationship with the
spot lead, to the other surface of the adhesive tape 2.
43. An electrical connection of the semiconductor element 1 to the
spot lead 7 is actualized by a metal bump 9 provided in an area
with no intermediary of the adhesive tape 2. This metal bump 9 is
composed of a conductive metal such as a solder alloy, etc. and is
provided on an unillustrated electrode surface formed on the side
of the semiconductor element 1.
44. The spot lead 7 is coated with metal plating 8 for an external
terminal (an upper surface side in the Figure) and for an internal
connection (a lower surface side in the Figure). Note that the
metal plating may not be coated on the side surfaces of the spot
lead.
45. At least side external and lower portions of the spot lead 7,
the support 4 and the semiconductor element 1 are sealed by mold
resins 6.
46. Incidentally, the above-described spot leads 7 in the present
embodiment are regularly arranged inwardly of the area of the
semiconductor element 1, i.e., within a width of the semiconductor
element 1.
47. Further, a height of the metal bump 9 is substantially the same
as a thickness of the adhesive tape 2.
48. Accordingly, it follows that a thickness of the semiconductor
device is a sum of the thickness of the semiconductor element 1,
the height of the metal bump 9 and a thickness of the spot lead 7.
Moreover, in accordance with present embodiment, the spot lead
constituting the external terminal is substantially flush with the
surface of the semiconductor device.
49. More specifically, the semiconductor device is as thin as
0.4-0.5 mm, wherein the sport lead 7 is approximately 0.125 mm
thick, the metal bump 9 is 0.5 mm in height, and the semiconductor
element 1 is 0.250 mm in thickness. Besides, the semiconductor
element 1 is capable of accommodating the respective constructive
members. Also, the connection between the spot lead 7 and the
semiconductor element 1 involves the use of the metal bump 9 and
the adhesive tape 2 as well, and hence a stress upon the metal bump
9 due to a difference in terms of thermal expansion therebetween is
relieved, with the result that it is feasible to prevent an
occurrence of deterioration and a decline in electric
characteristic due to a fracture, etc. of the metal bump 9.
50. Furthermore, the structure depicted in FIGS. 1 and 2 is that
the support 4 extends through the central portion of the
semiconductor device in to-and-fro directions in FIG. 2, and
therefore a solid package structure can be actualized.
51. Incidentally, the semiconductor element support is effective in
increasing a rigidity of the semiconductor device but may not be
necessarily indispensable. As shown, in FIGS. 3 and 4, a resin
sealing type semiconductor device with the support 4 removed is
also, as a matter of course, available.
52. Further, as illustrated in FIG. 5, the spot lead 7 and the mold
resin 6 are different in terms of coefficient of thermal expansion,
and consequently, when reverting to the normal temperature after
being sealed by the mold resin 6, a gap 101 is formed in between
respective boundaries. Furthermore, it can be considered that this
might be developed into a crack 102. Then, an enhancement of
close-contact property at those boundaries may, as shown in FIGS. 1
and 3, entail such an arrangement that the side surfaces of the
spot lead 7 are not coated with the metal plating 8 for the
external terminal and for the internal connection. It is because
the metal plating 8 causes a decline in the close contact with the
mold resin 6. Then, the contact surface between the mold resin 6
and the metal plating 8 is eliminated.
53. With this configuration, since the contact between the mold
resin 6 and the metal plating 8 disappears, the crack, etc. of the
mold resin after molding can be prevented.
54. FIGS. 6(a) and 6(b) are plan views showing a step of
manufacturing a lead frame in the first embodiment of the present
invention. FIG. 6(a) is a plan view showing the lead frame before
being cut. FIG. 6b is a plan view showing the lead frame after
being cut.
55. To start with, as illustrated in FIG. 6(a), there is prepared a
lead frame 10 including a frame member 10a, a partition member 10b,
the support 4 for connecting the frame member 10a, and a plurality
of leads 7A extending inward from the partition member 10b. Front
edges of the plurality of leads 7A are coated with the metal
plating 8 and thereafter so thermally press-fitted as to be adhered
to the adhesive tape 2.
56. Punched out thereafter, as illustrated in FIG. 6(b), are
non-contact portions between the leads 7A and the adhesive tape 2,
i.e., the portions in between the partition member 10b and the
front edges of the leads 7A, thus finally forming the spot leads 7.
That is, there is effected the punch-out in such a size that the
spot leads 7 become external terminals. The thus punched-out spot
leads 7 are secured to the adhesive tape 2, and the processing
directly enters an assembly of the semiconductor device.
57. As discussed above, in accordance with the first embodiment,
after finishing the metal plating 8, the plurality of leads 7A are
secured by the adhesive tape 2, and next, for punching out the
above portions into the spot leads 7, the spot leads 7 are fixed in
target positions and in a predetermined size. Further, the metal
plating is previously carried out, and therefore the metal plating
becomes unnecessary afterward even in the step of assembling the
semiconductor device.
58. Next, a second modified embodiment of the first embodiment of
the present invention will be explained.
59. FIG. 7 is a perspective view of the principal portion of the
resin sealing type semiconductor device, showing the second
modified embodiment of the first embodiment of the present
invention.
60. Referring to FIG. 7, there are shown the mold resin 6, the spot
lead, an extension lead 7-1, the metal plating 8 coated on the spot
lead and the surface of the extension lead 7-1, and the metal bump
9.
61. The spot leads 7 in the first embodiment are arrayed and,
corresponding thereto, soldered to foot patterns (not shown) of a
printed circuit board (unillustrated). Junction areas of the
semiconductor element 1 exist in the same positions as those of the
spot leads 7, and this implies that the semiconductor element has
no degree of freedom and might be constrained in terms of forming
the circuit. Then, even if the junction areas on the semiconductor
element are disposed with dispersion to some extent, the external
terminals of the spot leads can be arrayed with the aid of the
extension leads 7-1 in accordance with this embodiment.
62. That is, the spot leads 7 serving as the external terminals are
provided with the extension leads 7-1 extending to the junction
areas on the semiconductor element as wires extend, the metal bumps
9 are connected to the front edges of the extension leads 7-1.
63. Accordingly, the external terminals can be formed in array
without depending much upon the positions of the junction areas for
forming the circuit on the semiconductor element.
64. Next, a second embodiment of the present invention will be
described.
65. FIG. 8 is a sectional view of a resin sealing type
semiconductor device, showing the second embodiment of the present
invention.
66. As illustrated in FIG. 8, though the structure is substantially
the same as the first embodiment, the above-mentioned spot lead is
exposed up to the side surface of the semiconductor element 1, and
an L-shaped lead 12 is bent in an L-shape.
67. Accordingly, the formation of the spot lead is, unlike the
first embodiment, not that mold resin sealing is performed after
work-forming the lead frame but that the lead is work-formed after
the mold resin sealing step in the assembly of the semiconductor
device.
68. Thus, the L-shaped lead 12 is exposed up to the side surface of
the semiconductor element 1, and therefore a junction strength of
the solder for connecting the external terminals to the foot
patterns (not shown) of the printed circuit board (unillustrated),
can be enhanced.
69. Incidentally, as shown in FIG. 9, the resin sealing type
semiconductor device may, as a matter of course, be constructed
with an omission of the support 4 illustrated in FIG. 8.
70. FIG. 10 is a perspective view showing the principal portion of
the resin sealing type semiconductor device constructed such that
the semiconductor element support shown in FIG. 9 is eliminated,
wherein the L-shaped leads coated with the metal plating 8 are
arranged on both sides of the mold resin 6 by which the
semiconductor element is sealed.
71. FIG. 11 is a sectional view showing a first applied embodiment
of the second embodiment of the present invention.
72. According to the resin sealing type semiconductor device sealed
by the mold resin 6 shown in the second embodiment, because of the
L-shaped leads 12 existing on the side surfaces, there can be
connected L-shaped leads 12b of a resin sealing type semiconductor
device B and L-shaped leads 12a of a resin sealing type
semiconductor device A, which leads are adjacent to each other.
73. Further, the L-shaped lead 12a and the L-shaped lead 12b can be
connected through a solder 14 together to a foot pattern 15 on the
same printed circuit board 13. That is, the L-shaped lead 12a and
the L-shaped lead 12b can be shared on the same foot pattern 15.
The method of those connections is seen in many cases in the
semiconductor device functioning as a memory, wherein the circuits
of the semiconductor elements adjacent to each other are formed
reversely, and the I/Os of the terminals are also reversed.
74. Thus, the L-shaped leads 12 are provided on the side surfaces
of the resin sealing type semiconductor device, and it is therefore
possible to compactly package the resin sealing type semiconductor
devices in series on the same printed circuit board 13.
75. Furthermore, the wiring on the printed circuit board can be
simplified.
76. FIG. 12 is a sectional view showing a second applied embodiment
of the second embodiment of the present invention.
77. According to the resin sealing type semiconductor device sealed
by the mold resin 6 shown in the second embodiment of the present
invention, the L-shaped leads 12 extend along the side surface up
to the opposite surface, and hence, as illustrated in FIG. 12, if
the resin sealing type semiconductor devices are reversed (the
undersurfaces thereof are directed facing to each other) and
laminated in two layers, the front edge of the L-shaped lead 12a of
the resin sealing type semiconductor device B is fixed via the
solder 14 to the front edge of the L-shaped lead 12b of the resin
sealing type semiconductor device B. Also, the front edge of the
L-shaped lead 12b of the resin sealing type semiconductor device A
is connected via the solder 14 to the front edge of the L-shaped
lead 12a of the resin sealing type semiconductor device B.
Moreover, the undersurfaces of the semiconductor devices (resin
packages) are fixed to each other with an adhesive agent 16.
78. Thus, the L-shaped leads extend outwardly along the side
surfaces of the resin package up to the undersurface, so that the
front edges of the respective L-shaped leads 12 of the resin
sealing type semiconductor device A and the resin sealing type
semiconductor device B reversed thereto, can be connected by the
solders. Besides, the undersurfaces of the semiconductor elements
are fixed to each other with the adhesive agent 16, and
consequently a density of packaging on the printed circuit board 13
can be enhanced.
79. Note that the resin sealing type semiconductor devices used
herein are reversed in terms of formation of the circuits of the
respective semiconductor elements 1 and in the I/Os of the
terminals as well.
80. FIG. 13 is a sectional view illustrating a third applied
embodiment of the second embodiment of the present invention.
81. According to the third applied embodiment, as shown in FIG. 13,
one more layer is laminated on the above two layers shown in FIG.
12 to form three layers. More specifically, a resin sealing type
semiconductor device C serving as a third layer is laminated, in
the same direction as that of the first layer, on the resin sealing
type semiconductor device B as the second layer, wherein the
respective L-shaped leads 12 are connected.
82. In this way, the resin sealing type semiconductor devices in
accordance with the second embodiment of the present invention, are
laminated in the three layers, and the density of packaging on the
printed circuit board 13 can be therefore much more enhanced.
83. Further, the number of layers can be increased such as four
layers, five layers and so on.
84. FIG. 14 is a sectional view illustrating a fourth applied
embodiment of the second embodiment of the present invention.
85. The resin sealing type semiconductor devices sealed by the mold
resins 6 shown in the second embodiment of the present invention,
because of the L-shaped leads 12 extending outwardly along the side
surfaces of the resin package up to the portions in the vicinity of
the undersurface, can be therefore, as illustrated in FIG. 14,
laminated upwards in the same direction. To be more specific, the
resin sealing type semiconductor device A is packaged on the
printed circuit board 13, and the resin sealing type semiconductor
device B is laminated thereon in the same direction. Then, the
L-shaped lead 12a of the resin sealing type semiconductor device A
can be connected, via the solder 14 at the front edge and the
L-bent portion of the L-shaped leads 12, to the L-shaped lead 12a
of the resin sealing type semiconductor device B. The L-shaped lead
12b of the resin sealing type semiconductor device A can be
connected likewise to the L-shaped lead 12b f the resin sealing
type semiconductor device B. Further, the resin sealing type
semiconductor devices A and B are fixed to each other with the
adhesive agent 16.
86. Accordingly, the density of packaging on the printed circuit
board 13 can be increased. The method of those connections is seen
in the great majority of cases in the memory semiconductor devices
that can be laminated in multi-layers with absolutely the same
circuit formation elements.
87. Note that the present invention is not limited to the
embodiment discussed above but may be modified in a variety of ways
based on the gist of the present invention, and those modifications
are not excluded out of the scope of the present invention.
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