U.S. patent application number 09/749485 was filed with the patent office on 2001-05-03 for contactless total charge measurement with corona.
Invention is credited to Horner, Gregory S., Miller, Tom G., Verkuil, Roger L..
Application Number | 20010000651 09/749485 |
Document ID | / |
Family ID | 25432289 |
Filed Date | 2001-05-03 |
United States Patent
Application |
20010000651 |
Kind Code |
A1 |
Miller, Tom G. ; et
al. |
May 3, 2001 |
Contactless total charge measurement with corona
Abstract
A method of measuring total charge of an insulating layer on a
semiconductor substrate includes applying corona charges to the
insulating layer and measuring a surface photovoltage of the
insulating layer after applying each of the corona charges. The
charge density of each of the corona charges is measured with a
coulombmeter. A total corona charge required to obtain a surface
photovoltage of a predetermined fixed value is determined and used
to calculate the total charge of the insulating layer. The fixed
value corresponds to either a flatband or midband condition.
Inventors: |
Miller, Tom G.; (Solon,
OH) ; Verkuil, Roger L.; (Wappinger Falls, NY)
; Horner, Gregory S.; (Santa Clara, CA) |
Correspondence
Address: |
PEARNE & GORDON LLP
526 SUPERIOR AVENUE EAST
SUITE 1200
CLEVELAND
OH
44114-1484
US
|
Family ID: |
25432289 |
Appl. No.: |
09/749485 |
Filed: |
December 26, 2000 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09749485 |
Dec 26, 2000 |
|
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|
08912697 |
Aug 18, 1997 |
|
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|
6191605 |
|
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Current U.S.
Class: |
324/762.05 |
Current CPC
Class: |
G01R 29/24 20130101;
G01R 31/2831 20130101; G01R 31/2656 20130101 |
Class at
Publication: |
324/767 |
International
Class: |
G01R 031/26 |
Claims
What is claimed is:
1. A method for measuring a total charge of an insulating layer on
a substrate, said method comprising the steps of: (a) depositing
corona charges on the insulating layer; (b) measuring a surface
photovoltage for the insulating layer after depositing each of said
corona charges; (c) determining a total corona charge required to
obtain a surface photovoltage of a predetermined fixed value; and
(d) using said total corona charge to determine the total charge of
the insulating layer.
2. The method according to claim 1, further comprising the step of
measuring a charge density for each of said deposited corona
charges.
3. The method according to claim 1, wherein said fixed value is
associated with a flatband condition.
4. The method according to claim 3, wherein said fixed value is
about 0.0 volts.
5. The method according to claim 1, wherein said fixed value is
associated with a midband condition.
6. The method according to claim 5, wherein said fixed value is
about +/-0.3 volts.
7. The method according to claim 1, wherein said step of
determining said total corona charge includes continuing to deposit
said corona charges until the surface photovoltage measured is
equal said fixed value and said total corona charge corresponds to
a sum of said corona charges deposited.
8. The method according to claim 7, further comprising the step of
reversing polarity of said corona charges if said surface
photovoltage changes in a direction away from said fixed value.
9. The method according to claim 1, wherein said step of
determining said total corona charge includes using a data set of
discrete points, wherein said discrete points include said surface
photovoltages measured after depositing said corona charges and
corresponding total corona charges deposited to obtain said surface
photovoltages.
10. The method according to claim 9, wherein said step of using
said data set includes interpolating said total corona charge from
said discrete points.
11. The method according to claim 1, further comprising the step of
correcting each surface photovoltage with a Dember Voltage.
12. A method for measuring a total charge of an oxide layer on a
semiconductor wafer, said method comprising the steps of: (a)
measuring a surface photovoltage of the oxide layer; (b) depositing
a corona charge on the oxide layer; (c) remeasuring said surface
photovoltage of the oxide layer; (d) reversing polarity of said
corona charge if said surface photovoltage changed away from a
predetermined fixed value; (e) repeating steps (b) to (d) until
said surface photovoltage is equal to said fixed value; (f)
determining a total corona charge deposited on the oxide layer
corresponding to said surface photovoltage which is equal to said
fixed value; and (g) using said total corona charge to determine
the total charge of the oxide layer.
13. The method according to claim 12, wherein said fixed value is
associated with a flatband condition.
14. The method according to claim 13, wherein said fixed value is
about 0.0 volts.
15. The method according to claim 12, wherein said fixed value is
associated with a midband condition.
16. The method according to claim 15, wherein said fixed value is
about +/-0.3 volts.
17. The method according to claim 12, further comprising the step
of correcting each surface photovoltage with a Dember Voltage.
18. The method according to claim 12, further comprising the step
of selectively adjusting a magnitude of said corona charge prior to
the step of repeating steps (b) to (e).
19. A method for measuring a total charge of an oxide layer on a
semiconductor wafer, said method comprising the steps of: (a)
depositing a corona charge on the oxide layer; (b) measuring a
surface photovoltage of the oxide layer; (c) determining a total
corona charge density associated with said surface photovoltage;
(d) repeating steps (a) to (c) a plurality of times to obtain a
data set of discrete points for the surface photovoltages and the
total corona densities; (e) using said data set to determine a
total corona charge density corresponding to a surface photovoltage
of a predetermined fixed value; and (f) using said total corona
charge to determine the total charge of the oxide layer.
20. The method according to claim 19, wherein said step of using
said data set includes interpolating said fixed value from said
discrete points.
21. The method according to claim 18, further comprising the step
of correcting each surface photovoltage with a Dember Voltage.
Description
BACKGROUND OF THE INVENTION
1. The present invention generally relates to testing a
semiconductor wafer and, more particularly, to measuring a total
charge of an insulating layer of the semiconductor wafer using
corona charge.
2. The production of insulating layers, particularly, thin oxide
layers, is basic to the fabrication of integrated circuit devices
on semiconductor wafers. A variety of insulating dielectric layers
are used for a wide range of applications. These insulating layers
can be used, for example, to separate gate layers from underlying
silicon gate regions, as storage capacitors in DRAM circuits, for
electrical device isolation and to electrically isolate multilayer
metal layers.
3. The devices, however, are very sensitive to induced charges near
the silicon surface. In most cases, device performance depends
strongly on the concentration of free charges in the silicon. As a
result, unwanted variations in device performance can be introduced
by charges in the insulating layer and the insulating layer
interface. The charges can result, for example, from static
charging of the insulating layer surface, poorly forming the
insulating layer, excessive ionic contamination within the
insulating layer, and metallic contamination within the insulating
layer. In addition to degradation of device performance, electrical
isolation of individual devices can be impaired by unwanted surface
channels due to induced charges. A property of increasing interest,
therefore, is total charge Q.sub.tot or sometimes referred to as
net charge Q.sub.net of the insulating layer.
4. As illustrated in FIG. 1, there are five principle components of
the total charge Q.sub.tot of an oxide layer: surface charge
Q.sub.s; mobile charge Q.sub.m; oxide trapped charge Q.sub.ot;
fixed charge Q.sub.f; and interface trapped charge Q.sub.it. The
surface charge Qs is charge on the top surface of the oxide layer
and is frequently static charge or charged contaminants such as
metallics. The mobile charge Q.sub.m is ionic contamination in the
oxide layer such as potassium, lithium, or sodium trapped near the
air/SiO.sub.2 interface or the Si/SiO.sub.2 interface. The oxide
trapped charge Q.sub.ot is electrons or holes trapped in the bulk
oxide. The fixed charge Q.sub.f is charge at the Si/SiO.sub.2
interface. The interface trapped charge Q.sub.lt varies as a
function of bias condition.
5. Conventional methods of determining the total charge Q.sub.tot
of an oxide layer include capacitance-voltage (CV), surface
photovoltage (SPV) with biasing, and SPV analysis. The CV method
typically measures each of the individual component charges, except
the surface charge Q.sub.s which can be measured by the CV method,
with a metal contact formed on the surface of the oxide layer and
then obtains the total charge Q.sub.tot by summing up the
individual component charges. The SPV with biasing method uses a
contacting probe separated from the oxide layer with a Mylar
insulator to bias the semiconductor. The total charge Q.sub.tot is
determined by measuring the required bias of the probe to force a
certain SPV. The SPV analysis method takes SPV measurements and
infers the total charge Q.sub.tot via theoretical modeling.
6. While these methods may obtain the total charge Q.sub.tot, they
each have drawbacks. The CV method requires expensive and time
consuming sample preparation. The SPV with biasing method requires
a contacting probe which can allow charge transfer from the oxide
layer to the probe. The SPV analysis method relies on theoretical
modeling and may not be extremely accurate. Additionally, the SPV
methods only work over a narrow range of total charge Q.sub.tot
when the semiconductor is in depletion. Accordingly, there is a
need in the art for an improved method of measuring the total
charge of an insulating layer which is contactless, is a direct
measurement with no theoretical modeling, is sensitive over a wide
range of total charge, and is extremely accurate.
BRIEF SUMMARY OF THE INVENTION
7. The present invention provides a method for measuring a total
charge of an insulating layer on a substrate which overcomes at
least some of the disadvantages of the above-noted related art.
According to the present invention, the method includes depositing
corona charges on the insulating layer and measuring a surface
photovoltage for the insulating layer after depositing each of the
corona charges. The method further includes determining a total
corona charge required to obtain a surface photovoltage of a
predetermined fixed value and using the total corona charge to
determine the total charge.
8. According to one variation of the method according to the
present invention, the total corona charge is determined by
continuing to deposit the corona charges until the surface
photovoltage measured is equal the fixed value. The total corona
charge then corresponds to a sum of the corona charges deposited.
According to another variation of the method according to the
present invention, the total corona charge is determined using a
data set of discrete points, preferably by interpolation. The
discrete points include the surface photovoltages measured after
each of the corona charges and corresponding total corona charges
deposited to obtain each of the surface photovoltages.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
9. These and further features of the present invention will be
apparent with reference to the following description and drawings,
wherein:
10. FIG. 1 is a diagrammatic view of a semiconductor wafer
illustrating principle components of a total charge of an
insulating layer;
11. FIG. 2 is a schematic diagram of an apparatus for measuring a
total charge of an insulating layer according the present
invention;
12. FIG. 3 is an exemplary graph illustrating how the total charge
can be determined by incrementally depositing a corona charge until
obtaining a surface photovoltage (SPV) equal to a fixed value;
and
13. FIG. 4 is an exemplary graph illustrating how the total charge
can be determined by interpolating a data set of measured surface
phiotovoltages (SPV) and associated total corona charge
densities.
DETAILED DESCRIPTlON OF PREFERRED EMBODIMENTS
14. FIG. 1 illustrates an apparatus 10 for testing a semiconductor
wafer 12 according to the present invention. The semiconductor
wafer 12 includes a semiconductor substrate 14 and a dielectric or
insulating layer 16 disposed on the substrate 14. The substrate 14
is typically a silicon substrate and the insulating layer 16 is
typically an oxide layer. However, it should be understood that the
method of the present invention is applicable to a variety of
insulating layers grown and/or deposited on substrates of
semiconductor materials or metals. An air/dielectric interface 18
is formed at the top surface of the insulating layer 16 and a
dielectric/substrate interface 20 is formed between the insulating
layer 16 and the substrate 14. A measurement region 22 of the
insulating layer 16 is selected to be tested by the apparatus
10.
15. The illustrated apparatus includes a wafer chuck 24 for holding
the wafer 12 during testing, a contactless calibrated corona
discharge source or gun 26 for depositing corona charges, a
coulombmeter 28 for measuring deposited corona charges, an SPV
device 30 for measuring surface photovoltages, a position actuator
34 for locating various components over the wafer 12, and a
controller 36 for operating the apparatus 10. The wafer chuck 24
holds the wafer 12 during the measurement process and the wafer 12
is preferably secured to the wafer chuck 24 with a vacuum.
16. The corona gun 26 includes a non-contact corona-charge
depositing structure such as one or more needles 38 and an
electrode housing 40 which, along with the needles 38, focuses the
corona discharge onto the measurement region 22 of the insulating
layer 16. The needles 38 are preferably disposed a distance above
the top surface 18 of the insulating layer 16 to minimize fringing
effects and other causes of charge deposition non-uniformity. U.S.
Pat. No. 5,498,974, expressly incorporated herein in its entirety
by reference, discloses a suitable corona gun for depositing corona
charge on an insulating layer and a suitable Kelvin probe for
measuring the voltage on the surface of the layer.
17. The needles 38 are connected to a charge biasing means such as
a high-voltage power supply 42 via a suitable line. The power
supply 42 provides a desired high voltage output (e.g., +/-6-12 Kv)
to the corona gun 26 to produce positive or negative corona charges
depending on the polarity of the supply. The power supply 42 is
suitably connected to the controller 36 via an appropriate signal
line for feedback control of the power supply 42 during operation
of the apparatus 10 as described in more detail hereinafter.
18. The coulombmeter 28 is used to measure the deposited corona
charge and preferably includes a first operational amplifier or
current-to-voltage converter 44 and a second operational amplifier
or charge integrator 46. The input of current-to-voltage converter
44 is connected via a suitable signal line to the substrate 14 and
the wafer chuck 24. A corona current IC flows from the corona gun
26 and through the wafer 12 to the current-to-voltage converter 44.
This current IC is converted by the current-to-voltage converter 44
to a voltage and then integrated by the charge integrator 46 to
generate a voltage proportional to the charge Q.sub.c deposited
onto the insulating layer 16 by the corona gun 26. The outputs of
the current-to-voltage converter 44 and the charge integrator 46
are each connected to the controller 36 via suitable signal lines
to feed the current I.sub.c and the deposited corona charge Q.sub.c
information to the controller 36 during operation of the apparatus
10 as described in more detail hereinafter. Note that an electrical
contact between the wafer 12 and the chuck 24 because the
regulating displacement currents are sufficient to perform the
measurement.
19. The SPV device 30 is used to measure surface photovoltages of
the insulating layer 16 and preferably includes a very high
intensity light source 48 such as, for example, a xenon flash tube.
It is noted, however, that other types of SPV devices can be used
such as, for example, LED, laser, or AC with lock-in.
20. The position actuator 34 is used to locate the corona gun 26,
and the SPV device 30, over the measurement region 22 of the wafer
12. The position actuator is preferably a high-speed linear
translator including a mobile carriage which selectively moves
along a track disposed above the wafer chuck 24. The corona gun 26
and the SPV device 30, are each suitably spaced apart and attached
to the carriage. A control unit is suitably connected to the
controller 36 via an appropriate signal line for feed-back control
during operation of the apparatus 10 as described in more detail
hereinafter.
21. The controller 36 is used to control the operation of the
apparatus 10 and preferably includes an input device 62 connected
via a suitable line. The controller 36 controls the high-voltage
power supply 42, the SPV device 30, the Kelvin control 54, and the
position actuator control unit 60 and receives information from the
current-to-voltage converter 44 and the current integrator 46.
Based on the method set forth hereinbelow, the controller 36 can
provide a measurement of total charge Q.sub.tot of the insulating
layer 16. The controller 36 may be, for example, a dedicated
microprocessor-based controller or a general purpose computer.
22. To obtain a total charge Q.sub.tot measurement for an
insulating layer 16 of a semiconductor wafer 12 according to a
first method of the present invention, the actuator preferably
first locates the SPV device 30 over the measuring region 22 of the
wafer 12 to obtain an initial SPV measurement V.sub.SPV of the
insulating layer 16. The lamp 48 is flashed and a recording of a
peak intensity of the SPV transient is captured by an A/D card of
the controller 36. Because of the high intensity output of the lamp
48, a measurable SPV can be obtained in both in accumulation and in
depletion or inversion. Note that other types of SPV devices such
as, for example, LED, laser, or AC lock-in amplifier can be
used.
23. The position actuator 34 next locates the corona gun 26 over
the measuring region 22 of the wafer 12 to deposit a corona charge
Q.sub.c on the measurement region 22 of the insulating layer 16.
The controller 36 provides appropriate control signals for the
corona gun 26 to deposit a corona charge Q.sub.c . The corona
charge Q.sub.c deposited on the insulating layer 16 is measured by
the coulombmeter 28 and recorded by the controller 36.
24. The position actuator then locates the SPV device 30 over the
measuring region 22 of the wafer 12 to again measure the SPV
V.sub.SPV of the insulating layer 16. The SPV measurement V.sub.SPV
is preferably recorded by the controller 36 and compared to a
predetermined target value V.sub.SPVtarget stored in the controller
36. Preferably, the target value V.sub.SPVtarget is equal to a
fixed value (0 volts) which indicates a "flatband condition". At
flatband, no net charge is present on the insulating layer 16 and
no space charge imaging is in the silicon substrate 14. It should
be understood that the target value V.sub.SPVtarget can be equal to
fixed values other than zero. For example, the target value
V.sub.SPVtarget can be equal to a fixed value (typically about
+/-.300 V) which indicates a "Midband condition". At midband, the
SPV V.sub.SPV is equal to the fixed value which depends on the
doping of the particular substrate 14.
25. If the SPV measurement V.sub.SPV is not substantially equal to
the target value V.sub.SPVtarget, the above described steps of
depositing the corona charge Q.sub.c and remeasuring the SPV are
repeated. If the new SPV measurement V.sub.SPV changes beyond the
target value V.sub.SPVtarget from the previous SPV measurement
V.sub.SPV the controller 36 provides appropriate control signals
for the corona gun 26 to reverse the polarity of the next deposited
corona charge Q.sub.c. Note that for a target value V.sub.SPVtarget
of zero volts, a change in polarity from the previous SPV
measurement to new SPV measurement indicates that the polarity of
the next deposited corona charge Q.sub.c should be reversed. As
required, the controller 36 can adjust the magnitude of the next
deposited corona charge Q.sub.c to obtain an SPV measurement
V.sub.SPV equal to the target value V.sub.SPVtarget.
26. When the SPV measurement V.sub.SPV is substantially equal to
the target value V.sub.SPVtarget, the controller 36 sums each of
the individual corona charge increments Q.sub.c to obtain a total
corona charge Q.sub.applied@target applied to the insulating layer
16 to obtain the SPV measurement V.sub.SPV equal to the target
value V.sub.SPVtarget. The controller 36 then determines the total
charge Q.sub.tot of the insulating layer 16 from the total applied
corona charge Q.sub.applied@target wherein the total charge
Q.sub.tot is the negative of the total applied corona charge
Q.sub.applied@target, i.e. Q.sub.tot=-Q.sub.applied@target.
27. FIG. 3 illustrates an example of this first method wherein the
target value V.sub.SPVtarget is zero volts, or flatband condition.
A first corona charge Q.sub.c of -0.20E.sup.-07 C/cm.sub.2 is
applied on the insulating layer and an SPV measurement V.sub.SPV of
about 0.090 volts is obtained. A second corona charge Q.sub.c of
-0.20E.sup.-07 C/cm.sub.2 is then applied on the insulating layer
16 such that the total corona charge Q.sub.applied is
-0.40E.sup.-07 C/cm.sub.2. The second SPV measurement V.sub.SPV is
about 0.100 volts. A third corona charge Q.sub.c of +0.40E.sup.-07
C/cm.sub.2 is applied on the insulating layer 16 such that the
total corona charge Q.sub.applied is 0.00E.sup.-07 C/cm.sub.2. The
third SPV measurement V.sub.SPV is about 0.060 volts. Note that the
polarity of the third deposited corona charge Q.sub.c was changed,
because the SPV measurements V.sub.SPV were going away from the
target value (zero) and the magnitude of the third deposited corona
charge Q.sub.c was changed, specifically increased or doubled, to
avoid duplicating the first measurement. A fourth corona charge
Q.sub.c of +0.20E.sup.-07 C/cm.sub.2 is applied on the insulating
layer 16 such that the total corona charge Q.sub.applied is
+0.20E.sup.-07 C/cm.sub.2. The fourth SPV measurement V.sub.SPV is
about -0.100 volts. A fifth corona charge Q.sub.c of -0.10E.sup.-07
C/cm.sub.2 is applied on the insulating layer 16 such that the
total corona charge Q.sub.applied is +0.10E.sup.-07 C/cm.sub.2. The
fifth SPV measurement V.sub.SPV is about 0.000 volts and
substantially equal to the target value V.sub.SPVtarget. Note that
the polarity of the fifth deposited corona charge Q.sub.c was
changed because the fourth SPV measurement V.sub.SPV went past the
target value (zero) V.sub.SPVtarget and the magnitude of the fifth
deposited corona charge Q.sub.c was changed, specifically reduced
by half, to avoid duplicating the third measurement. Therefore, the
total applied corona charge Q.sub.applied@target to obtain the
target value V.sub.SPVtarget is +0.10E.sup.-07 C/cm.sub.2. The
controller 36 then determines the total charge Q.sub.tot of the
insulating layer is +0.10E.sup.-07 C/cm.sub.2.
28. In a second method of measuring the total charge Q.sub.tot of
the insulating layer 16 according to the present invention, the
position actuator 34 alternately locates the corona gun 26 and the
SPV device 30 over the measuring region 22 of the wafer 12 to
deposit increments of corona charge Q.sub.c on the insulatingc
layer 16 and to obtain SPV measurements V.sub.SPV of the insulating
layer 16. The controller 36 records each SPV measurement V.sub.SPV
and determines and records the total corona charge Q.sub.applied
applied to the insulating layer 16 to obtain that SPV measurement
V.sub.SPV. Therefore, a data set is obtained containing the
plurality of SPV measurements V.sub.SPV along with the
corresponding total applied corona charges Q.sub.applied.The
controller 36 then determines the total applied corona charge
Q.sub.applied@target required for the SPV measurement V.sub.SPV to
be substantially equal to the target value V.sub.SPVtarget from the
data set. The value Q.sub.applied@target is preferably interpolated
from the data set of discrete points. The controller 36 then
determines the total charge Q.sub.tot of the insulating layer 16
from the total applied corona charge Q.sub.applied@target wherein
the total charge Q.sub.tot is again the negative of the total
applied corona charge Q.sub.applied@target, i.e.
Q.sub.tot=-Q.sub.applied@target. FIG. 4 illustrates an example of
this second method wherein the target value V.sub.SPVtarget is zero
volts, or flatband condition. A data set is obtained by
incrementally depositing a plurality of corona charges Q.sub.c on
the insulating layer and obtaining a SPV measurement V.sub.SPV for
each incremental deposition. The illustrated data set contains 19
discrete points containing the SPV measurements V.sub.SPV and the
corresponding total applied corona charges Q.sub.applied. The
controller 3G interpolates the discrete points to determine that
the total applied corona charge Q.sub.applied@target at the target
value V.sub.SPVtarget is about +0.10E.sup.-07 C/cm.sub.2. The
controller 36 then determines the total charge Q.sub.tot of the
insulating layer is +0.10E.sup.-07 C/cm.sub.2.
29. When the target value V.sub.SPVtarget is zero volts, each of
the SPV measurements V.sub.SPV are preferably corrected with a
small Dember Voltage correction in either of the methods. The
Dember Voltage correction is a small "second order" correction
which can be applied via well known equations.
30. It should be evident that this disclosure is by way of example
and that various changes may be made by adding, modifying or
eliminating details without departing from the fair scope of the
teaching contained in this disclosure. The invention is therefore
not limited to particular details of this disclosure except to the
extent that the following claims are necessarily so limited.
* * * * *