U.S. patent application number 09/734208 was filed with the patent office on 2001-04-26 for liquid crystal display device with wide viewing angle characteristics.
Invention is credited to Ashizawa, Keiichiro, Kondo, Katsumi, Mishima, Yasuyuki, Ogawa, Kazuhiro, Ohe, Masahito, Ohta, Masuyuki, Yanagawa, Kazuhiko, Yanai, Masahiro.
Application Number | 20010000439 09/734208 |
Document ID | / |
Family ID | 27296711 |
Filed Date | 2001-04-26 |
United States Patent
Application |
20010000439 |
Kind Code |
A1 |
Ohta, Masuyuki ; et
al. |
April 26, 2001 |
Liquid crystal display device with wide viewing angle
characteristics
Abstract
A panel of a liquid crystal display, having a transparent
insulating substrate, a gate line which is formed on the substrate,
has a double-layered structure including a bottom metal layer and a
top indium tin oxide layer, and extends to form a gate pad. A
plurality of common electrodes which are formed on the substrate,
connected to each other and separated from the gate line. An
insulating layer covering the gate line and the common electrodes.
A plurality of pixel electrodes which are formed on the insulating
layer and are arranged between two of the common electrodes. A data
line which is formed on the insulating layer and extends to form a
data pad and a switching element having a gate connected to the
gate line, a source connected to the data line and a drain
connected to the pixel electrode.
Inventors: |
Ohta, Masuyuki; (Mobara-shi,
JP) ; Yanagawa, Kazuhiko; (Mobara-shi, JP) ;
Ashizawa, Keiichiro; (Mobara-shi, JP) ; Mishima,
Yasuyuki; (Mobara-shi, JP) ; Ogawa, Kazuhiro;
(Mobara-shi, JP) ; Ohe, Masahito; (Mobara-shi,
JP) ; Yanai, Masahiro; (Mobara-shi, JP) ;
Kondo, Katsumi; (Hitachinaka-shi, JP) |
Correspondence
Address: |
ANTONELLI TERRY STOUT AND KRAUS
SUITE 1800
1300 NORTH SEVENTEENTH STREET
ARLINGTON
VA
22209
|
Family ID: |
27296711 |
Appl. No.: |
09/734208 |
Filed: |
December 12, 2000 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
09734208 |
Dec 12, 2000 |
|
|
|
09443305 |
Nov 19, 1999 |
|
|
|
6201590 |
|
|
|
|
09443305 |
Nov 19, 1999 |
|
|
|
09079359 |
May 15, 1998 |
|
|
|
6064460 |
|
|
|
|
09079359 |
May 15, 1998 |
|
|
|
08610340 |
Mar 4, 1996 |
|
|
|
5754266 |
|
|
|
|
Current U.S.
Class: |
349/141 ;
349/139 |
Current CPC
Class: |
G02F 1/134363 20130101;
G02F 1/133512 20130101; G02F 1/136286 20130101 |
Class at
Publication: |
349/141 ;
349/139 |
International
Class: |
G02F 001/1343 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 17, 1995 |
JP |
07-58874 |
Apr 28, 1995 |
JP |
07-105862 |
Jul 27, 1995 |
JP |
07-191341 |
Claims
What is claimed is:
1. A panel of a liquid crystal display, comprising: a transparent
insulating substrate; a gate line formed on the substrate and
having a double-layered structure including a bottom metal layer
and a top indium tin oxide layer, the gate line being extended to
form a gate pad; a plurality of common electrodes formed on the
substrate, the plurality of common electrodes being connected to
each other and being separated from the gate line; an insulating
layer covering the gate line and the plurality of common
electrodes; a plurality of pixel electrodes formed on the
insulating layer, one of the plurality of pixel electrodes being
arranged between two of the plurality of common electrodes; a data
line formed on the insulating layer and extending to form a data
pad; and a switching element having a gate connected to the gate
line, a source connected to the data line and a drain connected to
one of the plurality of pixel electrodes.
2. The panel according to claim 1, wherein the data line has a
double-layered structure including a bottom metal layer and a top
indium tin oxide layer.
3. A panel of a liquid crystal display, comprising: a transparent
insulating substrate; a gate line formed on the substrate; a
plurality of common electrodes formed on the substrate, the
plurality of common electrodes being connected to each other and
being separated from the gate line; an insulating layer covering
the gate line and the plurality of common electrodes; a plurality
of pixel electrodes formed on the insulating layer, one of the
plurality of pixel electrodes being arranged between two of the
plurality of common electrodes; a data line formed on the
insulating layer, the data line having a double-layered structure
including a bottom metal layer and a top indium tin oxide layer,
the data line being extended to form a data pad; and a switching
element having a gate connected to the gate line, a source
connected to the data line and a drain connected to one of the
plurality of pixel electrodes.
Description
CROSS REFERENCE TO RELATED APPLICATION
1. This is a continuation of U.S. application Ser. No. 09/443,305,
filed Nov. 19, 1999, which is a continuation of U.S. application
Ser. No. 09/079,359, filed May 15, 1998, now U.S. Pat. No.
6,064,460, which is a continuation of U.S. application Ser. No.
08/610,340, filed Mar. 4, 1996, now U.S. Pat. No. 5,754,266, the
subject matter which is incorporated by reference herein. The
application is also related to U.S. application Ser. No.
09/079,360, filed May 15, 1998, now U.S. Pat. No. 5,929,958, U.S.
application Ser. No. 09/079,547, filed May 15, 1998, now U.S. Pat.
No. 5,956,111, and U.S. application Ser. No. 09/079,549, filed May
15, 1998, now U.S. Pat. No. 5,978,059, all of which are
continuation applications of U.S. application Ser. No. 08/610,340,
filed Mar. 4, 1996, now U.S. Pat. No. 5,754,266.
BACKGROUND OF THE INVENTION
2. (1) Field of the Invention
3. The present invention relates to a liquid crystal display device
and, more particularly, to a liquid crystal display device with
wide viewing angle characteristics of the active matrix system
using thin-film transistors.
4. (2) Description of the Prior Art
5. Active matrix liquid crystal display devices using active
elements as represented by thin-film transistors (TFT) have now
been widely used as display terminals of OA equipment since they
are light in weight and have a high picture quality equivalent to
that of cathode-ray tubes.
6. The display system of the liquid crystal display devices can be
roughly divided into two. One is a system in which liquid crystals
are sandwiched by two substrates having transparent electrodes and
are driven by a voltage applied to the transparent electrodes, and
light incident upon the liquid crystals and transmitted through the
transparent electrode is modulated to achieve display. All of the
products that are now available are based upon this system. Another
one is a system in which liquid crystals are driven by an electric
field which is nearly in parallel with the surface of a substrate
between two electrodes that are formed on the same substrate, and
light incident upon the liquid crystals through a gap between the
two electrodes is modulated to provide display. Though no product
which is based upon this system has yet been provided, it has a
feature of a very wide viewing angle and a promising art in
connection with active matrix liquid crystal display devices.
7. Features of the latter system have been disclosed in, for
example, Japanese Patent Laid-Open No. 505247/1993, Japanese Patent
Publication No. 21907/1988 and Japanese Patent Laid-Open No.
160878/1994.
SUMMARY OF THE INVENTION
8. A first problem that is to be solved by the present invention
will be described below.
9. In a conventional liquid crystal display device of the latter
system, an electric field which is substantially in parallel with
the surface of the substrate is generated via thin-film electrodes
having thicknesses of about several thousand angstroms, making it
difficult to effectively generate the electric field in the liquid
crystal layer compared with the former system.
10. Therefore, an electric field stronger than that of the
former-system must be generated between the electrodes, resulting
in an increase in consumption of electric power and making it
necessary to employ, as a driver unit, an LSI having an increased
breakdown voltage.
11. A second problem is that in the former system, a metal material
having good light-shielding property has been used as a black
matrix (light-shielding film) that covers the portions where
undesired light passes through. When this metal material is used
for the latter system, however, the electric field between the
electrodes is absorbed by the black matrix, making it difficult to
generate an effective electric field between the electrodes.
12. A third problem is that in the former system, the electric
field from a video signal line is absorbed by a counter electrode
that is formed on nearly the whole surface of a substrate opposed
to the substrate on which the video signal line is formed, and the
electric field formed by the video signal line does not affect the
electric field established between the electrodes. In the latter
system in which no electrode exists on the substrate opposed to the
substrate on which the video signal line is formed, however, the
electric field formed by the video signal line affects the electric
field established between the electrodes, giving rise to the
occurrence of crosstalk (particularly in the vertical direction of
the screen) in which video information of other rows affect the
display and, hence, appearance of striped image called vertical
smear.
13. A fourth problem is that in the latter system in which the
counter electrode can be formed linearly, the resistance of the
counter electrode from the input end to the other end thereof
becomes very larger than that of when the counter electrode is
formed in a planar shape in the former system. Therefore, the
counter voltage is not sufficiently fed to the terminal pixels, and
the counter voltage is distorted by the video signals due to the
capacitance at a portion where the counter voltage signal line
intersects the video signal line, resulting in the occurrence of
crosstalk (particularly, in the horizontal direction of the screen)
and appearance of striped image called lateral smear.
14. A fifth problem is that in the latter conventional system in
which the pixel electrode PX and the counter electrode CT are
arranged on the same substrate, the opening area that contributes
to the display decreases by the amount corresponding to the
arrangement of the counter voltage signal line CL compared with
that of the former conventional system.
15. Moreover, an increase in the number of intersecting points of
the wirings arranged in the form of a matrix results in increased
chances of short-circuiting among the wirings and in an increase in
the parasitic capacitance among the signal lines, hindering smooth
transfer of signals.
16. Besides, while the pixel electrode PX in the former system has
a planar shape, the pixel electrode PX of the latter system has a
narrow strip shape or a line shape, often causing pixels to become
defective due to disconnection of the line.
17. A sixth problem is that the latter conventional system may
employ an AC driving method to apply an AC voltage to the liquid
crystal layer, e.g., an AC driving method which inverts a drive
voltage applied to the liquid crystal layer after every horizontal
scanning interval. In this case, when a pulse voltage is applied to
the counter voltage signal line CL having a resistance R and a
capacitance C, the pulse voltage is distorted. Hereinafter, the
sixth problem will be described with reference to FIGS. 25 and
26.
18. FIG. 25 is a diagram of an equivalent circuit of a transmission
passage for transmitting a drive voltage applied to the counter
voltage signal line CL in a liquid crystal display device of the
latter system, and FIG. 26 is a diagram showing waveforms of a
drive voltage applied to the counter electrode CT at each of the
points.
19. The transmission passage for transmitting a drive voltage
applied to the counter electrode CT includes chiefly resistors 50
of the counter voltage signal line CL, a resistor 51 of a common
bus line CB between a common voltage driver unit 52 and the counter
voltage signal line CL, and storage capacitors 53 in the pixels.
Therefore, when a liquid crystal layer is driven by an AC drive
voltage, the waveform of the drive voltage (pulse voltage) fed to
the counter electrode CT from the common voltage driver unit 52 of
a common voltage generator and driver unit 103 is distorted.
20. As will be understood from a counter voltage waveform 54 at
point D, a counter voltage waveform 55 at point E, a counter
voltage waveform 56 at point F and a counter voltage waveform 57 at
point G shown in FIG. 26, the distortion of waveform of the drive
voltage fed to the counter electrode CT increases with an increase
in the distance, from point D, to point G.
21. As a result, the electric field between the pixel electrode PX
and the counter electrode CT in the pixels differs, irregular
brightness (irregular display) occurs along the counter voltage
signal line CL, and the display quality of the liquid crystal
display panel is impaired.
22. This becomes a serious problem particularly when there is
employed an AC drive system which inverts the drive voltage applied
to the liquid crystal layer after every horizontal scanning
interval.
23. When the counter voltage signal line CL is broken even at one
place, furthermore, it is impossible to drive the liquid crystals
since the drive voltage is no longer fed to the counter electrode
CT of the pixels after the broken portion, impairing the display
quality of the liquid crystal display panel.
24. According to the constitution of the prior art, furthermore,
the thickness differs by a thickness of the signal line depending
upon the portions where the video signal line DL and the scanning
signal line GL are led out and the portions where such signal lines
are not led out. Therefore, the gap becomes irregular in the whole
panel impairing the display quality of the liquid crystal display
panel.
25. The object of the present invention is to provide a liquid
crystal display device of high picture quality that can be
efficiently fabricated, that is powered on a low voltage and
consumes small amounts of electric power, and has wide viewing
characteristics as a result of solving the above-mentioned problems
inherent in the prior art.
26. Description of representatives of the invention disclosed in
this specification is as follows.
27. Means for solving the above-mentioned first to fourth problems
will be described below.
28. Means 1.
29. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a pixel electrode and a
counter electrode formed between one of the substrates and the
liquid crystal layer, in order to change the light transmission
factor or the light reflection factor of the liquid crystals by use
of an electric field which is established between the pixel
electrode and the counter electrode and has a component in parallel
with the one substrate, wherein the dielectric constant anisotropy
.DELTA..epsilon. and the effective thickness deff of the liquid
crystal layer, the width Wp of the pixel electrode in the lateral
direction, the width Wc of the counter electrode in the lateral
direction, and the gap L between the pixel electrode and the
counter electrode satisfy the following relationships,
30. .DELTA..epsilon.>0, 2.8 .mu.m<deff<4.5 .mu.m,
31. 1.2.times.deff<Wp<L/1.2, and 1.2.times.deff<Wc<
L/1.2
32. Means 2.
33. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a pixel electrode and a
counter electrode formed between the one of the substrates and the
liquid crystal layer, in order to change the light transmission
factor or the light reflection factor of the liquid crystals by use
of an electric field which is established between the pixel
electrode and the counter electrode and has a component in parallel
with the one substrate, wherein the dielectric constant anisotropy
.DELTA..epsilon. and the effective thickness deff of the liquid
crystal layer, the width Wp of the pixel electrode in the lateral
direction, the width Wc of the counter electrode in the lateral
direction, and the gap L between the pixel electrode and the
counter electrode satisfy the following relationships,
34. .DELTA..epsilon.<0, 4.2 .mu.m<deff<8.0 .mu.m
35. 1.2.times.deff<Wp<L/1.2, and 1.2.times.deff<Wc<
L/1.2
36. Means 3.
37. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a pixel electrode and a
counter electrode formed between one of the substrates and the
liquid crystal layer, whereby pixels are formed such that the light
transmission factor or the light reflection factor of the liquid
crystals is changed by an electric field which is established
between the pixel electrode and the counter electrode and has a
component in parallel with the one substrate, and forming a black
matrix surrounding the pixels on a plane, wherein the black matrix
is made of an insulating material.
38. Means 4.
39. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a video signal line, a drain
electrode, a pixel electrode to which is applied a video signal
from the video signal line via the drain electrode and a thin film
transistor, and a counter electrode, that are formed between one of
the substrates and the liquid crystal layer, whereby pixels are
formed such that the light transmission factor or the light
reflection factor of the liquid crystals is changed by an electric
field which is established between the pixel electrode and the
counter electrode and has a component in parallel with the one
substrate, wherein the counter electrodes of adjacent pixels are
positioned on both sides of the video signal line, and the widths
of the counter electrodes are not smaller than one-half the width
of the video signal line.
40. Means 5.
41. In the means 4, the counter electrode is made of an anodizable
metal, and a self-anodized film of this metal covers the counter
electrode.
42. Means 6.
43. In the means 5, the counter electrode is made of aluminum.
44. Means 7.
45. In the means 5, the counter electrode is formed simultaneously
with the gate signal line which is made of a metal layer having
anodized surface.
46. Means 8.
47. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a video signal line, a drain
electrode, a pixel electrode to which is applied a video signal
from the video signal line via the drain electrode and a thin film
transistor, a gate signal line connected to a gate electrode which
turns the thin film transistor on, and a counter electrode to which
a counter voltage is applied via a counter voltage signal line,
which are formed between one of the substrates and the liquid
crystal layer, whereby pixels are formed such that the light
transmission factor of the liquid crystals is changed by an
electric field which is established between the pixel electrode and
the counter electrode and has a component in parallel with the
surface of the one substrate, wherein the gate signal line is made
of a metal layer having anodized surface, and the counter voltage
signal line is made of the same material as that of the gate signal
line.
48. Means 9.
49. In the means 8, the counter voltage signal line is made of
aluminum.
50. Means 10.
51. In the means 8, the counter voltage signal line and the gate
signal line are formed through the same step.
52. Means 11.
53. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a video signal line, a drain
electrode, a pixel electrode to which is applied a video signal
from the video signal line via the drain electrode and a thin film
transistor, a gate electrode for turning the thin film transistor
on, a counter electrode to which a counter voltage is applied via a
counter voltage signal line, and a storage capacitor formed by
superposing part of the pixel electrode on part of the counter
voltage signal line via an interlayer insulating film, which are
formed between one of the substrate and the liquid crystal layer,
whereby pixels are formed such that the light transmission factor
of the liquid crystals is changed by an electric field which is
established between the pixel electrode and the counter electrode
and has a component in parallel with the surface of the substrate,
wherein the counter voltage signal line is made of aluminum having
anodized surface.
54. Means 12.
55. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a video signal line, a drain
electrode, a pixel electrode to which is applied a video signal
from the video signal line via the drain electrode and a thin film
transistor, a gate electrode for turning the thin film transistor
on, and a counter electrode to which a counter voltage is applied
via a counter voltage signal line, which are formed between the one
substrate and the liquid crystal layer, whereby pixels are formed
such that the light transmission factor of the liquid crystals is
changed by an electric field which is established between the pixel
electrode and the counter electrode and has a component in parallel
with the substrate, wherein a common bus line is provided to
connect in common the counter voltage signal lines of the plurality
of pixels, and the common bus line has a multilayer structure of
two or more conductive layers.
56. Means 13.
57. In the means 12, the common bus line is made up of a conductive
layer of the same material as that of the gate electrode and a
conductive layer of the same material as that of the video signal
line, and these conductive layers are formed simultaneously with
the formation of the gate electrode and the video signal line.
58. In order to solve the above-mentioned fifth problem according
to the present invention, the counter voltage signal line and the
drain electrode are used in common by two pixels adjacent to each
other in the direction of column, and the storage capacitor is
formed in a part of the counter voltage signal line.
59. Means 14.
60. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a video signal line, a drain
electrode, a pixel electrode to which is applied a video signal
from the video signal line via the drain electrode and a thin film
transistor, a gate electrode for turning the thin film transistor
on, a counter electrode to which a counter voltage is applied via a
counter voltage signal line, and a storage capacitor formed by
superposing part of the pixel electrode on part of the counter
voltage signal line via an interlayer insulating film, which are
formed between the one of the substrates and the liquid crystal
layer, whereby pixels are formed such that the light transmission
factor of the liquid crystals is changed by an electric field which
is established between the pixel electrode and the counter
electrode and has a component in parallel with the substrate,
wherein the scanning signal lines connected to the gate electrodes
and the counter voltage signal lines connected to the counter
electrodes are arranged in parallel in a first direction of the
plurality of pixels that are arranged in the form of a matrix, and
the video signals connected to the drain electrodes are arranged in
parallel in a second direction, and wherein the counter voltage
signal line is used in common by two pixels adjacent to each other
in the second direction.
61. Means 15.
62. In the means 14, the gate electrodes, scanning signal lines and
thin-film transistor elements of the two pixels adjacent to each
other in the direction of column are so arranged as to be opposed
to each other, the drain electrodes are used in common by the -two
pixels, and the wirings from the drain electrodes to the video
signal lines are arranged between the opposing scanning signal
lines.
63. Means 16.
64. In the means 15, the thin-film transistors are formed along the
scanning signal line in such a way that the plurality of the
thin-film transistors are connected to the pixel electrodes in a
pixel;
65. Means for solving the above-mentioned sixth problem will be
described below.
66. Means 17.
67. A liquid crystal display device having a pair of substrates at
least one of which is transparent, a liquid crystal layer
sandwiched by the pair of substrates, a video signal line, a drain
electrode, a pixel electrode to which is applied a video signal
from the video signal line via the drain electrode and a thin film
transistor, a gate signal line connected to a gate electrode for
turning the thin film transistor on, and a counter electrode to
which a counter voltage is applied via a counter voltage signal
line, which are formed between one of the substrates and the liquid
crystal layer, whereby pixels are formed such that the light
transmission factor of the liquid crystals is changed by an
electric field which is established between the pixel electrode and
the counter electrode and has a component in parallel with the
substrate, wherein the ends on both sides of the counter voltage
signal line are connected to a common bus line and are, further,
connected to a common voltage generating and driving means.
68. Means 18.
69. In the means 17, thickness adjustment patterns are provided on
the non-display area of one of the substrates, and the thickness
adjustment patterns are made of the same material and have the same
thickness as that of the common bus line.
70. Means 19.
71. In the means 17 or 18, a thickness adjustment film made of the
same material and having the same thickness as that of the gate
electrode is provided over or under the common bus line in the
non-intersecting areas except the areas where the common bus line
intersects the gate signal line or the video signal line and except
the areas where the common bus line is connected to the counter
voltage signal line.
72. Means 20.
73. In the means 17 or 18, a thickness adjustment film made of the
same material and having the same thickness as that of the drain
electrode is provided over or under the common bus line in the
non-intersecting areas except the areas where the common bus line
intersects the gate signal line or the video signal line and except
the areas where the common bus line is connected to the counter
voltage signal line.
74. According to the constitution of means 1, when a liquid crystal
composition having positive dielectric constant anisotropy is used,
it is possible to obtain a transmission characteristic little
depending upon the wavelength in the birefringence mode, i.e., to
obtain good white display, and to apply an electric field component
to the liquid crystal layer in parallel with the substrate, which
is much stronger than the component of the electric field in the
direction perpendicular to the substrate. It is therefore possible
to utilize the most efficient transmission state enabling the
voltage between the pixel electrode and the counter electrode to be
efficiently converted into the component in the direction in
parallel with the substrate without raising the voltage for driving
the liquid crystal.
75. According to the constitution of means 2, when a liquid crystal
composition having negative dielectric constant anisotropy is used,
it is possible to obtain a transmission characteristic little
depending upon the wavelength in the birefringence mode, i.e., to
obtain good white display, and to apply an electric field component
to the liquid crystal layer in parallel with the substrate, which
is much stronger than an electric field component in the direction
perpendicular to the substrate. It is therefore possible to utilize
the most efficient transmission state enabling the voltage between
the pixel electrode and the counter electrode to be efficiently
converted into the one in the direction in parallel with the
substrate without raising the voltage for driving the liquid
crystal.
76. According to the constitution of means 3, it is possible to
eliminate the effect upon the electric field between the pixel
electrode and the counter electrode because the black matrix is
constituted by an insulating material. The black matrix cuts off
the effect upon the electric field between the pixel electrode and
the counter electrode enabling the distance to be decreased among
the electrodes. It is therefore allowed to increase the aperture
ratio, and to effectively apply an electric field component in
parallel with the surface of the substrate to the liquid crystal
layer without raising the voltage for driving the liquid
crystals.
77. According to the constitution of means 4, the lines of electric
force from the video signal line can be absorbed by the counter
electrodes that are located on both sides thereof, making it
possible to prevent the occurrence of so-called crosstalk. In this
case, the lines of electric force from the video signal line are
equally divided by the counter electrodes on both sides each by
50%; i.e., 100% of the lines of electric force are absorbed in
total.
78. According to the constitution of means 5, short-circuiting is
prevented from occurring even when the counter electrodes on both
sides are brought as close to each other as possible or even when
they are arranged to intersect with the video signal line. This
makes it possible to increase the aperture ratio.
79. According to the constitution of means 6, the counter
electrodes have a small resistance. Therefore, a nearly uniform and
stable current flows through the counter electrodes, and the
counter voltage is sufficiently transmitted even to the pixels at
the terminals, making it possible to further heighten the effect of
means 4.
80. According to the constitution of means 7, it is possible to
obtain the effect of means 5 without increasing the number of steps
of production.
81. According to the constitution of means 8, it is possible to
decrease the probability of short-circuiting at the areas where the
counter voltage signal line intersects the video signal line.
82. According to the constitution of means 9, the counter voltage
signal line has a small resistance and a nearly uniform and stable
current flows through each of the counter electrodes. Therefore, a
counter voltage is sufficiently transmitted to the pixels even at
the terminals making it possible to achieve uniform pixel
display.
83. According to the constitution of means 10, the effect of means
7 is gained without increasing the number of production steps.
84. According to the constitution of means 11, the electrode of the
lower side formed via an interlayer insulating film is made of
aluminum having an anodized surface, making it possible to form a
storage capacitor little permitting the occurrence of troubles that
are caused by point defects due to so-called whiskers.
85. According to the constitution of means 12, it is possible to
decrease the resistance without increasing the width of the common
bus line and to apply a sufficiently large voltage up to the ends
of the counter electrodes. This makes it possible to decrease
crosstalk (particularly, crosstalk in the horizontal direction of
the screen) that is caused by distortion of the counter voltage
according to the video signals.
86. According to the constitution of means 13, it is possible to
obtain the effect of means 12 without increasing the number of
steps of production.
87. According to the constitution of means 14, the gate signal
lines GL connected to the gate electrodes GT and the counter
voltage signal lines CL connected to the counter electrodes CT are
arranged in parallel in the direction of row of a plurality of
pixels arranged in the form of a matrix, the counter voltage signal
line CL is used in common by the two pixels adjacent to each other
in the direction of column, and the video signal lines DL connected
to the drain electrodes SD2 are arranged in parallel in the
direction of column, in order to decrease the parasitic capacitance
among the wirings, to increase the production yield, to ensure the
openings in the pixels and to decrease the resistances of the
counter voltage signal lines CL.
88. According to the constitution of means 15, the gate electrodes
GT, gate signal lines GL and thin-film transistor elements of two
pixels adjacent to each other in the direction of column in the
constitution of means 14 are so arranged as to be opposed to each
other, the drain electrode SD2 is used in common by the two pixels,
and the wiring from the drain electrode SD2 to the video signal
line DL is arranged between the opposing gate signal lines GL, in
order to decrease the parasitic capacitance among the wirings, to
increase the production yield, to ensure the openings in the pixels
and to decrease the resistances of the counter voltage signal lines
CL.
89. According to the constitution of means 16, the thin-film
transistors are formed along the gate signal line GL in such a way
that the plurality of thin-film transistors are connected to the
pixel electrodes PX in one pixel of the constitution of means 15,
in order to decrease the parasitic capacitances among the wirings,
to increase the production yield, to ensure the openings in the
pixels and to decrease the resistances of the counter voltage
signal lines CL.
90. According to the constitution of means 17 to 20, both ends of
the counter voltage signal lines CL are connected to the common bus
line CB which has a resistance smaller than the resistances of the
counter voltage signal lines CL. It is therefore possible to
decrease distortion in the waveform of the drive voltage applied to
the counter electrodes CT from the common voltage driver unit 52,
to uniformalize the electric field intensity between the pixel
electrode PX and the counter electrode CT in each pixel in the
panel, and to decrease irregularity in the brightness that occurs
along the counter voltage signal line CL.
91. Even in case the counter voltage signal line CL is broken at a
portion, the common voltage is supplied from both ends of the
counter voltage signal line CL to drive liquid crystal of the
pixels. Unlike the prior art, therefore, the liquid crystal of
pixels after the broken portion can be driven, and the quality of
display is not impaired.
92. Furthermore, the area where the common bus line CB is arranged
has the same cross-sectional structure as that of an area where the
common bus line CB intersects the gate signal line GL or the video
signal line DL, making it possible to decrease irregularity in the
film thickness at the edges of the substrate where the common bus
line CB is formed, to uniform the gap length between two
substrates, and to decrease gap irregularity of the liquid crystal
display device.
93. The foregoing and other objects, advantages, manner of
operation and novel features of the present invention will be
understood from the following detailed description when read in
connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
94. FIG. 1 is a diagram schematically illustrating a pixel for
explaining the basic operation of a liquid crystal display element
of the present invention;
95. FIG. 2 is a plan view of essential portions illustrating a
pixel and peripheries thereof in a liquid crystal display unit of
an active matrix-type color liquid crystal display device of an
embodiment 1;
96. FIG. 3 is a diagram illustrating a pattern of a black matrix of
embodiment 1;
97. FIG. 4 is a plan view of essential portions illustrating a
pixel and peripheries thereof in a liquid crystal display unit of
an active matrix-type color liquid crystal display device of
embodiment 2;
98. FIG. 5 is ea plan view of a plurality of pixels on a liquid
crystal display panel formed by arranging the pixels of embodiment
1;
99. FIG. 6 is a diagram of an electrically equivalent circuit of
two pixels adjacent to each other in the direction of column of
embodiment 1;
100. FIG. 7 is a sectional view of a pixel cut along the line 3-3
in. FIG. 2;
101. FIG. 8 is a sectional view of a thin-film transistor element
TFT cut along the line 4-4 in FIG. 2;
102. FIG. 9 is a sectional view of a storage capacitor Cstg cut
along the line 5-5 in FIG. 2;
103. FIG. 10 is a plan view for explaining the constitution of the
peripheries of a matrix of the display panel;
104. FIG. 11 is a sectional view illustrating panel edge portions
with gate signal terminals on the left side but without external
connection terminals on the right side;
105. FIGS. 12A and 12B are a plan view and a sectional view
illustrating the area where a gate terminal GTM is connected to a
gate wiring GL;
106. FIGS. 13A and 13B are a plan view and a sectional view
illustrating the area where a drain terminal DTM is connected to a
video signal line DL;
107. FIGS. 14A and 14B are a plan view and a sectional view
illustrating the area where a common electrode terminal CTM, a
common bus line CB and a common voltage signal line CL are
connected together;
108. FIG. 15 is a flow chart of a sectional view of a pixel and a
gate terminal illustrating the steps A to C of fabricating a
substrate SUB1;
109. FIG. 16 is a flow chart of a sectional view of the pixel and
the gate terminal illustrating the steps D to F of fabricating the
substrate SUB1;
110. FIG. 17 is a flow chart of a sectional view of the pixel and
the gate terminal, illustrating the steps G to H of fabricating the
substrate SUB1;
111. FIG. 18 is a diagram illustrating the relationships among the
direction in which the electric field is applied, the direction of
rubbing and the transmission axis of a polarizer plate;
112. FIG. 19 is a diagram of a circuit illustrating a matrix unit
and the peripheries thereof of a active matrix-type color liquid
crystal display device of the present invention;
113. FIG. 20 is a diagram illustrating waveforms for driving the
active matrix-type color liquid crystal display device of the
present invention;
114. FIG. 21 is a top view illustrating the state where the
peripheral driver units are mounted on a liquid crystal display
panel;
115. FIG. 22 is a diagram illustrating, in cross section, the
structure of a tape carrier package TCP in which an integrated
circuit chip CHI constituting the driver unit is mounted on a
flexible wiring substrate;
116. FIG. 23 is a sectional view illustrating essential portions in
a state where the tape carrier package TCP is connected to a
terminal GTM for a gate signal circuit in the liquid crystal
display panel PNL;
117. FIG. 24 is an exploded perspective view illustrating a liquid
crystal display module;
118. FIG. 25 is a diagram illustrating an equivalent circuit of a
passage for transmitting a drive voltage to the counter electrodes
CT in the liquid crystal display device of FIG. 19;
119. FIG. 26 is a diagram of characteristics illustrating waveforms
of the drive voltage at each of the points shown in FIG. 25;
120. FIG. 27 is a block diagram schematically illustrating the
constitution of the liquid crystal display device of embodiment
3;
121. FIG. 28 is a diagram illustrating an equivalent circuit of a
passage for transmitting a drive voltage to the counter electrodes
CT in the liquid crystal display device of embodiment 3;
122. FIG. 29 is a diagram of characteristics illustrating waveforms
of the drive voltage at each of the points shown in FIG. 28;
123. FIGS. 30A to 30C are a plan view and sectional views
illustrating the connection of the counter voltage signal line CL
and the common bus line CB at point A on the matrix substrate of
FIG. 27;
124. FIGS. 31A and 31B are a plan view and a sectional view
illustrating the connection of the counter voltage signal line CL
and the common bus line CB at point B on the matrix substrate of
FIG. 27;
125. FIGS. 32A and 32B are a plan view and a sectional view
illustrating the intersection of the video signal line DL and the
common bus line CB at point C on the matrix substrate of FIG.
27;
126. FIGS. 33A to 33C are a plan view and sectional views
illustrating another example of connection of the counter voltage
signal line CL and the common bus line CB at point A on the matrix
substrate of FIG. 27;
127. FIG. 34 is a plan view illustrating another arrangement of the
common bus line CB of embodiment 3;
128. FIG. 35 is a plan view illustrating a further arrangement of
the common bus line CB of embodiment 3;
129. FIGS. 36A to 36C are a plan view and sectional views
illustrating the connection of the counter voltage signal line CL
and the common bus line CB at a point corresponding to point A on
the matrix substrate of FIG. 27 in the liquid crystal display
device of embodiment 4;
130. FIGS. 37A and 37B are a plan view and a sectional view
illustrating the connection of the counter voltage signal line CL
and the common bus line CB at a point corresponding to point B on
the matrix substrate of FIG. 27 in the liquid crystal display
device of embodiment 4;
131. FIGS. 38A and 38B are a plan view and a sectional view
illustrating the intersection of the video signal line DL and the
common bus line CB at a point corresponding to point C of the
matrix substrate of FIG. 27 in the liquid crystal display device of
embodiment 4; and
132. FIG. 39 is a plan view illustrating another arrangement of the
common bus line CB of embodiment 4.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
133. Further objects and features of the present invention will
become obvious from the following description in conjunction with
the drawings.
134. [Active matrix Liquid crystal display device]
135. An embodiment in which the present invention is adapted to a
color liquid crystal display device of the active matrix system
will be described below. In the drawings, those portions having the
same functions are denoted by the same reference numerals and their
description will not be repeated.
136. First, prior to illustrating embodiments of the present
invention, the basic operation of the liquid crystal display
element to which the present invention is applied will be
explained.
137. FIGS. 1A to 1D are schematic diagrams of a pixel for
explaining the operation of a liquid crystal display element to
which the present invention is applied, wherein FIG. 1A is a
sectional view of when no voltage is applied, FIG. 1B is a
sectional view of when a voltage is applied, FIG. 1C is a plan view
of when no voltage is applied, and FIG. 1D is a plan view of when a
voltage is applied. In these drawings, SUB1 and SUB2 denote
transparent glass substrates (hereinafter often referred to simply
as substrates), CT denotes a counter electrode, GI denotes an
insulating film, DL denotes a video signal line, PX denotes a pixel
electrode, POL1 and POL2 denote polarizer plates, MAX1 denotes the
polarizing axis of the lower polarizer plate, MAX2 denotes the
polarizing axis of the upper polarizer plate, RDR denotes the
initial orientation of liquid crystal molecules, EDR denotes the
direction of electric field, BM denotes a black matrix, FIL denotes
a color filter, OC denotes a flattening film, ORI1 and ORI2 denote
orientation films, and LC denotes liquid crystals (rod-like liquid
crystal molecules).
138. In the liquid crystal display element, the polarizer plate
POL2, light-shielding black matrix BM, color filter FIL, protective
film OC and orientation film ORI2 are formed on one substrate SUB2
of the two transparent glass substrates SUB1 and SUB2. On the other
substrate SUB1, via the liquid crystals LC, are formed the
polarizer plate POL1, orientation film ORI1, drain electrode SD2,
pixel electrode PX, counter electrode CT, wirings and thin-film
transistor. These drawings do not show wirings and thin-film
transistors.
139. Referring to FIGS. 1A and 1C, liquid crystals LC have been
oriented in advance by the orientation films ORI1 and ORI2 in the
orientation RDR that is substantially in parallel with the surface
of the substrate SUB1. In this state, the initial orientation RDR
of the liquid crystals LC is nearly in agreement with the
polarizing axis MAX1 of the polarizing plate POL1, the polarizing
axis MAX1 and the polarizing axis MAX2 of the other polarizing
plate POL2 intersect at right angles, and the pixel is in a
non-display state.
140. Next, referring to FIGS. 1B and 1D, when a voltage is applied
between the counter electrode CT and the pixel electrode PX formed
on the glass substrate SUB1 in order to create an electric field
(having a direction EDR) substantially in parallel with the surface
of the substrate SUB1, the liquid crystal molecules LC are twisted
on a plane substantially in parallel with the surface of the
substrate SUB1. Then, the pixel becomes a display state. A large
number of pixels are arranged to constitute a display panel.
141. [Planar constitution of a matrix unit (pixel unit)]
142. FIG. 2 is a plan view illustrating a pixel and peripheries
thereof in the active matrix-type color liquid crystal display
device of a first embodiment of the present invention.
143. Referring to FIG. 2, each pixel is provided in a region
(surrounded by four signal lines) where the gate signal line (gate
signal line or horizontal signal line) GL, counter voltage signal
line (counter electrode wiring) CL and two adjacent video signal
lines (drain signal lines or vertical signal lines) DL intersect.
Each pixel includes a thin-film transistor TFT, a storage capacitor
Cstg, a pixel electrode PX and a counter electrode CT. The gate
signal lines GL and the counter voltage signal lines CL extend in
the right-and-left direction in the drawing and are arranged in a
plural number in the up-and-down direction. The video signal lines
DL extend in the up-and-down direction and are arranged in a plural
number in the right-and-left direction. The pixel electrode PX is
connected to the thin-film transistor TFT, and the counter
electrode CT is formed integrally with the counter voltage signal
line CL.
144. The two adjacent pixels along the video signal line DL have a
planar constitution such that they have the same size and pattern.
The reason is that the counter voltage signal line CL is used in
common by the two vertically adjacent pixels along the video signal
line DL, the width of the counter voltage signal line CL is
increased and, hence, the resistance of the counter voltage signal
line CL is decreased. This makes it easy to sufficiently feed a
counter voltage to the counter electrodes CT of the pixels arranged
in the right-and-left direction from an external circuit.
145. The pixel electrode PX and the counter electrode CT are
opposed to each other, and the optical state of the liquid crystals
LC is controlled by an electric field between each pixel electrode
PX and the counter electrode CT, thereby to control the display.
The pixel electrodes PX and the counter electrodes CT are formed
like comb teeth, and extend in a slender form in the up-and-down
direction.
146. When the pixel electrodes PX and the counter electrodes CT are
arranged on the surface of the same substrate, the liquid crystal
display element of this embodiment makes it possible to increase
the area of the opening portion of the pixel that transmits light
and to increase the width of the counter voltage signal line CL
compared with the wiring constitution in which the counter voltage
signal line CL is not used in common by the two pixels adjacent to
each other in the direction of column.
147. As a result, the counter voltage signal line CL has a
decreased resistance, the common signals are smoothly propagated,
the picture quality is improved, and the common signal generator
unit consumes a reduced amount of electric power.
148. By commonly using the counter voltage signal line CL,
furthermore, the number of portions where the video signal line DL
intersects the counter voltage signal line CL is decreased by about
25% compared with that of the conventional structure, and
probability of short-circuiting between the video signal line DL
and the counter voltage signal line CL decreases.
149. FIG. 6 is a diagram of an electric equivalent circuit of two
pixels adjacent to each other in the direction of column,
constituting the liquid crystal display element of a lateral
electric field system of the embodiment.
150. In FIG. 6, reference numeral 24 denotes a wiring from the
video signal line DL to the drain electrode SD2, 31 denotes the
interline capacitance between the counter voltage signal line CL
and the video signal line DL, 32 denotes the interline capacitance
between the gate signal line GL and the video signal line DL, and
33 denotes the interline capacitance between the gate electrode GT
and the pixel electrode PX.
151. The constitution of embodiment 1, as shown in the drawings,
makes it possible to decrease the parasitic capacitance 31 between
the video signal line DL and the counter voltage signal line CL,
and to smoothly propagate liquid crystal drive signals to the drain
electrodes SD2 and to the counter electrodes CT through the active
filter wiring.
152. According to this embodiment as described above, it is
possible to improve the picture quality and to decrease the
consumption of electric power by the signal generator unit.
153. As shown in FIG. 2, furthermore, the gate electrodes GT, gate
signal lines GL and thin-film transistors TFT are devided by the
two pixels adjacent to each other in the direction of column, the
drain electrode SD2 is used in common, and the wiring 24 from the
commonly used drain electrode SD2 to the video signal line DL is
provided between the opposing gate signal lines GL. The
constitution of this embodiment makes it possible to decrease the
area where the drain electrode SD2 intersects the gate signal line
GL and to decrease the probability of short-circuiting between the
drain electrode SD2 and the gate signal line GL.
154. Referring to the equivalent circuit of FIG. 6, the parasitic
capacitance (interline capacitance) 32 decreases between the drain
electrode SD2 and the gate signal line GL, signals can be smoothly
propagated to the gate electrodes GT, the picture quality is
improved, and a decreased amount of electric power is consumed by
the signal generator unit.
155. The constitution of this embodiment in which the counter
voltage signal line CL is used in common and the drain electrode
SD2 is used in common by the two pixels adjacent to each other in
the direction of column, can be further applied to a conventional
liquid crystal display panel of vertical electric field system.
156. The position of the thin-film transistor TFT can be moved on
the gate signal line GL without increasing the area of intersection
of the drain electrode SD2 and the gate electrode GT.
157. Here, the pixel electrode PX in the liquid crystal display
element according to the present invention is of a narrow linear
form, which may cause the pixel to become defective when it is
broken.
158. FIG. 4 is a plan view illustrating the structure of a pixel
constituting a liquid crystal display element of a second
embodiment according to the present invention. As shown in FIG. 2,
the thin-film transistors TFT are so provided that the plurality of
thin-film transistors TFT are connected to the number of the pixel
electrodes PX while utilizing the features of the first embodiment,
the drain electrode SD2 is used in common, and the wiring from the
drain electrode SD2 to the video signal line DL is formed between
the opposing gate signal lines GL. Hence the display of pixel is in
an almost normal state even in case one of the pixel electrodes PX
is broken at a portion.
159. When any one of the thin-film transistors becomes defective,
furthermore, the pixel electrode PX connected to the defective
thin-film transistor is cut by using a laser correction means or
the like, and the image is displayed using other normal thin-film
transistors.
160. According to the second embodiment as described above, it is
possible to obtain an active matrix-type liquid crystal display
element having a high picture quality and fabricated
efficiently.
161. FIG. 5 is a plan view illustrating a plurality of pixels in a
liquid crystal display panel of in-plane electric field system
formed by arranging the pixels of the first embodiment. In FIG. 5,
the counter voltage signal line CL is used in common by the two
pixels adjacent to each other in the direction of column indicated
by arrow P.
162. The number O of counter electrodes CT (number of comb teeth)
in a pixel is so selected as to always maintain the relationship
O=P+1 with respect to the number P of pixel electrodes PX (number
of comb teeth) (O=3, P=2 in this embodiment). The reason is that
the counter electrode CT and the pixel electrode PX are alternately
arranged and the counter electrodes CT are provided on both sides
of the video signal line DL on a plane. This makes it possible to
shield the lines of electric force from the video signal line DL
with the counter electrodes CT, so that the electric field between
the counter electrode CT and the pixel electrode PX is not affected
by the electric field generated by the video signal line DL. The
counter electrode CT is fed with a potential at all times from an
external unit, i.e., from a counter voltage signal line CL that
will be described later, and takes a stable potential. Therefore,
the potential of the counter electrode CT changes very little even
when it is laid close to the video signal line DL. This further
causes the pixel electrode PX to be located geometrically away from
the video signal line DL. Therefore, the parasitic capacitance
between the pixel electrode PX and the video signal line DL,
greatly decreases, making it possible to suppress fluctuation in
the pixel electrode potential Vs caused by the video signal
voltage. Therefore, crosstalk (image defect called vertical smear)
that occurs in the up-and-down direction is suppressed.
163. The pixel electrode PX and the counter electrode CT have
widths Wp and Wc which are 6 .mu.m, respectively, and are very
larger than a maximum predetermined thickness of 4.5 .mu.m of a
liquid crystal layer that will be described later. By taking
variation during the production into consideration, it is desired
that a margin of not smaller than 20% is maintained. Desirably,
therefore, these electrodes should have widths of much larger than
5.4 .mu.m. Therefore, the electric field component which is applied
to the liquid crystal layer and is in parallel with the surface of
the substrate becomes larger than the electric field component in
the direction perpendicular to the surface of the substrate,,
making it possible to lower the voltage for driving liquid
crystals.
164. It is further desirable that the maximum widths Wp and Wc of
the pixel electrode PX and the counter electrode CT are smaller
than the gap L between the pixel electrode PX and the counter
electrode CT. The reason is that when the gap between the
electrodes is too small, the lines of electric force are greatly
curved whereby the area increases where the electric field
component perpendicular to the surface of the substrate becomes
greater than the electric-field component in parallel with the
surface of the substrate, making it difficult to efficiently apply
the electric field component in parallel with the surface of the
substrate to the liquid crystal layer. Therefore, when the margin
is 20%, the gap L between the pixel electrode PX and the counter
electrode CT must be greater than 7.2 .mu.m.
165. The embodiments 1 and 2 have a resolution of 640.times.480
dots, a diagonal of 10.4 inches, and a pixel pitch of 110 .mu.m. By
dividing the pixels by four, the gap L becomes greater than 7.2
.mu.m. That is, by dividing the pixels by not more than eight, a
gap L> 7.2 .mu.m is satisfied. When the pixels are divided by 10
or a larger number, however, the gap L becomes smaller than 7
.mu.m, which does not satisfy the required condition.
166. Furthermore, the video signal line DL has a width of 8 .mu.m
so that it will not be broken, which is slightly larger than that
of the pixel electrode PX and the counter electrode CT. In order to
prevent short-circuiting, a gap of 1 .mu.m is formed between the
video signal line DL and the counter electrode CT. Here, the video
signal line DL has a width which is not larger than twice the width
of the counter electrodes CT that are located on both sides
thereof. Or, when the width of the video signal line DL is
determined based on the production yield, the width of the counter
electrodes CT located on both sides of the video signal line DL is
determined to be not smaller than one-half the width of the video
signal line DL. The reason is that the lines of electric force
generated from the video signal line DL is absorbed by the counter
electrodes CT on both sides thereof. To absorb the lines of
electric force generated from the signal line having a given width,
the lines that absorb the lines of electric force must have a width
which is not smaller than the width of the line generating the
lines of electric force.
167. Therefore, the lines of electric force generated from half (4
.mu.m each) the width of the video signal line DL need to be
absorbed by the counter electrodes CT on both sides thereof,
respectively. For this purpose, the counter electrodes CT located
on both sides of the video signal line DL has a width of not
smaller than one-half thereof. This makes it possible to prevent
crosstalk (particularly, crosstalk in the up-and-down (vertical)
direction) caused by video signals.
168. The gate signal line GL has a width that satisfies a
resistance capable of applying a sufficient gate voltage to the
gate electrodes GT of pixels at the terminals (on the side opposite
to the gate electrode terminals GTM that will be described later).
Furthermore, the counter voltage signal line CL has a width, i.e.,
has a resistance capable of applying a sufficient counter voltage
to the counter electrodes CT of pixels at the terminals (on the
side opposite to the common bus line CB that will be described
later).
169. On the other hand, the gap between the pixel electrode PX and
the counter electrode CT is changed according to the liquid crystal
material that is used. The reason is that the electric field
intensity for accomplishing a maximum transmission factor differs
with the liquid crystal material. Therefore, the gap between the
electrodes is determined depending upon the liquid crystal
material, such that a maximum transmission factor is obtained
within a range of maximum amplitude of a signal voltage that is
determined depending upon the breakdown voltage of the video signal
driver unit (driver of the signal side) that is used. The gap
between the electrodes becomes 16 .mu.m when a liquid crystal
material described later will be used.
170. [Cross-sectional constitution of the matrix unit (pixel
unit)]
171. FIG. 7 is a sectional view cut along the line 3-3 in FIG. 2,
FIG. 8 is a sectional view of a thin-film transistor element TFT
cut along the line 4-4 in FIG. 2, and FIG. 9 is a sectional view of
a storage capacitor Cstg cut along the line 5-5 in FIG. 2. As shown
in FIGS. 7 to 9, on the side of the lower transparent glass
substrate SUB1 are formed a thin-film transistor TFT, a storage
capacitor Cstg and a group of electrodes, and on the side of the
upper transparent glass substrate SUB2 are formed a color filter
FIL and a black matrix pattern BM for blocking light, with respect
to a liquid crystal layer LC.
172. Furthermore, orientation films ORI1 and ORI2 for controlling
the initial orientation of liquid crystals are provided on the
inside surfaces (liquid crystal LC side) of the transparent glass
substrates SUB1 and SUB2, and polarizer plates are provided with
their polarizing axes intersecting at right angles (cross-nicol
arrangement) on the outside surfaces of the transparent glass
substrates SUB1 and SUB2.
173. [TFT substrate]
174. Constitution of the lower transparent glass substrate SUB1
(TFT substrate) will now be described in detail.
175. [Thin-film transistor TFT]
176. The thin-film transistor TFT so operates that the channel
resistance decreases between the source and the drain when a
positive bias is applied to the gate electrode GT thereof, and that
the channel resistance increases when a zero bias is applied
thereto.
177. Referring to FIG. 8, the thin-film transistor TFT includes the
gate electrode GT, a gate insulating film GI, an i-type
semiconductor layer AS made of i-type amorphous silicon
(a-Si)(without doped with intrinsic conductivity-type-determining
impurities), a pair of source electrode SD1 and drain electrode
SD2. The source and drain are usually determined by the bias
polarity therebetween. In the circuit of the liquid crystal display
device, the polarity is inverted during the operation. It should
therefore be noted that the source and drain are interchanged
during the operation. In the following description, however, either
of them is fixedly expressed as a source and the other as a drain
only for convenience of description.
178. [Gate electrode GT]
179. The gate electrode GT is continuous to the gate signal line
GL, and is formed by part of the region of the gate signal line GL.
The gate electrode GT is a portion which extends over the active
region of the thin-film transistor TFT, and is so formed as to
completely cover the i-type semiconductor layer AS (as viewed from
below). Therefore, in addition to its role, the gate electrode GT
works to shield the i-type semiconductor layer AS from external
light or backlight. In this embodiment, the gate electrode GT is
composed of a single conductive film gl. As the conductive film gl,
there can be used an aluminum film formed by, for example,
sputtering and an anodically oxidized film AOF of aluminum is
formed thereon.
180. [Scanning (gate) signal line GL]
181. The scanning (gate) signal line GL is constituted by a
conductive film gl. The conductive film g1 forming the scanning
signal line GL is formed through the same step as that of forming
the conductive film g1 of the gate electrode GT and as a unitary
structure. Through the scanning signal line GL, the gate voltage Vg
is fed to the gate electrode GT from an external circuit. On the
scanning signal line GL is formed an anodically oxidized film AOF
of aluminum, too. A portion that intersects the video signal line
DL is formed narrow to decrease the probability of short-circuiting
relative to the video signal line, and is branched into two so that
it can be separated by laser trimming in case it has
short-circuited.
182. [Counter electrode CT]
183. The counter electrode CT is constituted by the conductive film
g1 of the same layer as the gate electrode GT and the scanning
signal line GL. On the counter electrode CT is formed an anodically
oxidized film AOF of aluminum, too. The counter electrode CT is
completely covered with the anodically oxidized film AOF and
prevents short-circuit even when it is laid as close to the video
signal line as possible. Moreover, they can be so arranged as to
intersect. A counter voltage Vcom is applied to the counter
electrode CT. In this embodiment, the counter voltage Vcom is set
to a potential which is lower than an intermediate potential
between a drive voltage Vdmin of a minimum level applied to the
video signal line DL and a drive voltage Vdmax of a maximum level
by a field-through voltage .DELTA.Vs that generates when the
thin-film transistor element TFT is turned off. When it is
necessary to nearly halve the power source voltage of the
integrated circuit used in the video signal driver unit, an AC
voltage should be applied.
184. [Counter voltage signal line CL]
185. The counter voltage signal line CL is constituted by a
conductive film g1. The conductive film g1 forming the counter
voltage signal line CL is formed through the same step as that of
forming the conductive film g1 of the gate electrode GT, scanning
signal line GL and counter electrode CT, and as a unitary
structure. Through the counter voltage signal line CL, the counter
voltage Vcom is fed to the counter electrode CT from an external
circuit. On the counter voltage signal line CL is formed an
anodically oxidized film AOF of aluminum, too. A portion that
intersects the video signal line DL is formed narrow to decrease
the probability of short-circuiting relative to the video signal
line like the case of the scanning signal line GL, and is branched
into two so that it can be separated by laser trimming in case it
has short-circuited.
186. [Insulating film GI]
187. The insulating film GI is used as a gate insulating film for
imparting an electric field to the gate electrode GT and to the
semiconductor layer AS in the thin-film transistor TFT. The gate
insulating film GI is formed on the gate electrode GT and on the
scanning signal line GL. As the gate insulating film GI, a silicon
nitride film formed by, for example, plasma CVD having a thickness
of 1200 to 2700 .ANG. (about 2400 .ANG. in this embodiment) is
used. The gate insulating film GI is so formed as to surround the
whole matrix unit AR, and the periphery is removed so that external
connection terminals DTM, GTM are exposed. The insulating film GI
contributes to electrically insulating the scanning signal line GL,
counter voltage signal line CL and video signal line DL.
188. [i-Type semiconductor layer AS]
189. The i-type semiconductor layer AS is made of amorphous silicon
and has a thickness of from 200 to 2200 .ANG. (about 2000 .ANG. in
this-embodiment). A layer d0 is an N(+)-type amorphous silicon
semiconductor layer doped with phosphorus (P) for ohmic contact,
and is left only on a portion where the i-type semiconductor layer
AS exists thereunder and conductive layers d1 (d2) exist
thereover.
190. The i-type semiconductor layer AS is also provided at the
portions (cross-over portion) where the scanning signal line GL,
the counter voltage signal line CL and the video signal line DL
intersect. The i-type semiconductor layer AS at the intersecting
portion decreases the probability of short-circuiting at the
portions where the scanning signal line GL, the counter voltage
signal line CL and the video signal line DL intersect.
191. [Source electrode SD1, drain electrode SD2]
192. The source electrode SD1 and the drain electrode SD2 are,
respectively, composed of the conductive film d1 that is in contact
with the N(+)-type semiconductor layer d0 and the conductive film
d2 formed thereon.
193. The conductive film d1 is composed of a chromium (Cr) film
formed by sputtering and has a thickness of 500 to 1000 .ANG.
(about 600 .ANG. in this embodiment). The Cr film is so formed as
to have a thickness of not larger than about 2000 .ANG., since
stress is produced as its thickness increases. The Cr film is used
in order to improve the adhesiveness to the N(+)-type semiconductor
layer d0 and to prevent aluminum conductive film d2 from diffusing
into the N(+)-type semiconductor layer d0 (i.e., used as a
so-called barrier layer). As the conductive film d1, there may be
used a film of a high-melting metal (Mo, Ti, Ta or W) and a film of
a high-melting metal silicide (MoSi.sub.2, TiSi.sub.2, TaSi.sub.2
or WSi.sub.2) in addition to Cr film.
194. The conductive film d2 having a thickness of 3000 to 5000
.ANG. (about 4000 .ANG. in this embodiment) is formed by Al
sputtering. The Al film causes less stress than Cr film and can,
hence, be so formed as to have a large thickness, in order to
decrease the resistances of the source electrode SD1, drain
electrode SD2 and video signal line DL, and to reliably extend over
the steps caused by the gate electrode GT and the i-type
semiconductor layer AS (to improve step coverage).
195. After the conductive films d1 and d2 are patterned using the
same mask pattern, the N(+)-type semiconductor layer d0 is removed
by using the same mask or by using the conductive films d1 and d2
as masks. That is, the N(+)-type semiconductor layer d0 remaining
on the i-type semiconductor layer AS is removed in a self-alignment
manner except the portions of the conductive films d1 and d2. In
this case, the N(+)-type semiconductor layer d0 is removed by
etching and, hence, the surface of the i-type semiconductor layer
AS is etched to some extent, which, however, can be controlled by
changing the etching time.
196. [Video signal line DL]
197. The video signal line DL is constituted by the first
conductive film d1 and the second conductive film d2 of the same
layers as the source electrode SD1 and the drain electrode SD2.
Moreover, the video signal line DL is formed integrally with the
drain electrode SD2.
198. [Pixel electrode PX]
199. The pixel electrode PX is constituted by the first conductive
film d1 and the second conductive film d2 of the same layers as the
source electrode SD1 and the drain electrode SD2. Moreover, the
pixel electrode PX is formed integrally with the source electrode
SD1.
200. [Storage capacitor Cstg]
201. The pixel electrode PX is so formed as to be superposed on the
counter voltage signal line CL at an end on the side opposite to
the end that is connected to the thin-film transistor TFT. As will
be obvious from FIG. 9, this superposition constitutes a storage
capacitor (capacitance element) Cstg having the pixel electrode PX
as one electrode PL2 and having the counter voltage signal line CL
as the other electrode PL1. The dielectric film of this storage
capacitor Cstg is composed of the insulating film GT that is used
as the gate insulating film of the thin-film transistor TFT and the
anodically oxidized film AOF.
202. As shown in FIG. 2, the storage capacitor Cstg is formed, when
viewed from above, on an expanded portion of the conductive film g1
of the counter voltage signal line CL.
203. In this case, the electrode located under the insulative film
GI of the storage capacitor Cstg is made of aluminum having
anodized surface. Therefore, the storage capacitor hardly causes
defect (short-circuiting to the electrode of the upper side) that
is caused by so-called whiskers of aluminum.
204. [Protective film PSV1]
205. A protective film PSV1 is provided on the thin-film transistor
TFT. The protective film PSV1 is formed chiefly for protecting the
thin-film transistor TFT from moisture and the like and must have a
high transparency and a good resistance against humidity. The
protective film PSV1 is composed of, for example, a silicon oxide
film or a silicon nitride film formed by a plasma CVD device, and
has a thickness of about 1 .mu.m.
206. The protective film PSV1 is so formed as to surround the whole
matrix unit AR, and its periphery is removed so that the external
connection terminals DTM and GTM are exposed. As for the
thicknesses of the protective film PSV1 and the gate insulative
film GI, the former film is formed so as to have a large thickness
in consideration of the effect of protection and the latter film is
formed so as to have a small thickness in consideration of the
mutual conductance gm to the transistor. Therefore, the protective
film PSV1 that exhibits a high protection effect is formed in a
size larger than the gate insulative film GI in order to protect
even the peripheral portions as wide as possible.
207. [Color filter substrate]
208. Referring to FIGS. 2 and 7 again, the constitution of the
upper transparent glass substrate SUB2 (color filter substrate)
will now be described in detail.
209. [Light-shielding film BM]
210. On the upper transparent glass substrate SUB2 is formed a
light-shielding BM (so-called black matrix), so that undesired
light transmitted through the gaps (gaps other than the gap between
the pixel electrode PX and the counter electrode CT) does not go to
the side of the display Surface to deteriorate the contrast and the
like. The light-shielding film BM also serves to prevent external
light or backlight from falling on the i-type semiconductor layer
AS. That is, the i-type semiconductor layer AS of the thin-film
transistor TFT is sandwiched by the light-shielding film BM and the
gate electrode GT of a large size located on the upper and lower
sides, and so does not receive natural light or backlight from the
external side.
211. A polygonal contour line of the light-shielding film BM shown
in FIG. 2 represents an opening inside which no light-shielding
film BM is formed. This is only an example of the contour line. The
pattern may be the one shown in FIG. 3 when it is desirable to form
a large opening portion. In the region A of FIG. 3, the direction
of the electric field is disordered and the display of this portion
corresponds to the video data in the pixel in such a 1-to-1 manner
that the display is black when this portion is black, and is white
when this portion is white. Therefore, this portion can be utilized
as part of the display. Furthermore, the boundary in the
up-and-down direction of the drawing is determined by the precision
of registration of the upper and lower substrates. When the
precision registration is better than the width of the counter
electrodes CT located on both sides of the video signal line DL,
the opening portion can be widened by setting the boundary line
within-the width of the counter electrode.
212. The light-shielding film BM has light-shielding property
against light, and is composed of a highly insulating film so as
not to affect the electric field between the pixel electrode PX and
the counter electrode CT. This enables the electric field component
in parallel with the surface of the substrate to be effectively
applied to the liquid crystal layer, and makes it possible to lower
the voltage for driving liquid crystals. The light-shielding film
BM is made of a material obtained by mixing a black pigment into a
resist material, and has a thickness of about 1.2 .mu.m. As another
embodiment, there can be used a material obtained by mixing
palladium and electroless-plated nickel into the resist
material.
213. In this case, the gap can be increased to some extent between
the pixel electrode PX and the counter electrode CT, making it
possible to increase the aperture ratio.
214. The light-shielding film BM is formed like a lattice
surrounding the pixels. The lattice partitions the effective
display area of each pixel. Therefore, the contour of each pixel is
clearly shown by the light-shielding film BM. That is, the
light-shielding film BM has the two functions, i.e., a black matrix
and shielding against light that falls on the i-type semiconductor
layer AS.
215. The light-shielding film BM is formed like a frame even on the
peripheral portions, and has a pattern that is continuous to the
pattern of the matrix unit that has a plurality of dot-like
openings. The light-shielding film BM on the peripheral portions
outwardly extends over the sealing portion SL to prevent the
leakage of light such as light reflected by a device on which the
display is mounted, such as a personal computer, from entering the
matrix unit. The light-shielding film BM is short of the edges of
the substrate SUB2 by about 0.3 to 1.0 mm, and does not extend to
the cut regions of the substrate SUB2.
216. [Color filter FIL]
217. The color filter FIL forms stripes of a repetition of red,
green and blue lines at positions facing the pixels. The color
filter FIL is so formed as to be superposed on the edge portions of
the light-shielding film BM.
218. The color filter FIL is formed as described below. First, a
dyeable member such as acrylic resin is formed on the surface of
the upper transparent glass substrate SUB2, and is then removed by
photolithographic technology, leaving it on the red filter-forming
regions. Then, the dyeable member is dyed with a red dye and is
fixed to form a red filter R. Next, a green filter G and a blue
filter B are formed successively through the same steps.
219. [Overcoat film OC]
220. The overcoat film OC is provided to prevent the dye of the
color filter FIL from leaking to the liquid crystals LC and to
flatten the steps produced by the color filter FIL and
light-shielding film BM. The overcoat film OC is formed by using a
transparent resin material such as acrylic resin, epoxy resin or
the like resins.
221. [Liquid crystal layer and polarizer plate]
222. The liquid crystal layer, orientation film and polarizer plate
will be described below.
223. [Liquid crystal layer]
224. As the liquid crystal materials LC, there are used nematic
liquid crystals having a positive dielectric constant anisotropy
.DELTA..epsilon. of 13.2 and a refractive index anisotropy .DELTA.n
of 0.081 (589 nm at 20.degree. C.), and nematic liquid crystals
having a negative dielectric constant anisotropy .DELTA..epsilon.
of -7.3 and a refractive index anisotropy .DELTA.n of 0.053 (589 nm
at 20.degree.). The liquid crystal layer has a thickness (gap) of
not smaller than 2.8 .mu.m but not larger than 4.5 .mu.m when it
has a positive dielectric constant anisotropy .DELTA..epsilon..
225. In this case, there is obtained a transmission factor that
does not almost change with the wavelengths within a range of
visible light when the retardation .DELTA.n.multidot.d is not
smaller than 0.25 .mu.m but is not larger than 0.32 .mu.m, and most
of the liquid crystals having a positive dielectric constant
anisotropy .DELTA..epsilon. have a birefringence anisotropy
.DELTA.n which is not smaller than 0.07 but is not larger than
0.09.
226. On the other hand, the liquid crystal layer has a thickness
(gap) which is not smaller than 4.2 .mu.m but is not larger than
8.0 .mu.m when it has a negative dielectric constant anisotropy
.DELTA..epsilon.. The reason is that it is necessary to determine
the retardation .DELTA.n.multidot.d within a range of not smaller
than 0.25 .mu.m but not larger than 0.32 .mu.m, like the case of
the liquid crystals having a positive dielectric constant
anisotropy .DELTA..epsilon.. In this case, most of the liquid
crystals having a negative dielectric constant anisotropy
.DELTA..epsilon. have a birefringence anisotropy .DELTA.n of not
smaller than 0.04 but not larger than 0.06.
227. A combination of the orientation films and the polarizer
plates that will be described later makes it possible to obtain a
maximum transmission factor when the liquid crystal molecules are
turned by about 45.degree. toward the direction of the electric
field EDR from the rubbing direction RDR.
228. The thickness (gap) of the liquid crystal layer is controlled
by using polymer beads.
229. There is no particular limitation on the liquid crystal
material LC so long as it is a nematic liquid crystal material. The
drive voltage can be decreased with an increase in the value of the
dielectric constant anisotropy .DELTA..epsilon.. The thickness
(gap) of the liquid crystal layer can be increased with a decrease
in the refractive index anisotropy .DELTA.n, in order to shorten
the time to pour the liquid crystals and to decrease variation in
the gap.
230. [Orientation film]
231. The orientation film ORI is made of a polyimide. The upper and
lower substrates have rubbing directions RDR which are in parallel
with each other and form an angle of 75.degree. with respect to the
direction of the applied electric field EDR. FIG. 18 illustrates
their relationships.
232. The angle formed by the rubbing direction RDR and the
direction of the applied electric field EDR may be larger than
45.degree. but is smaller than 90.degree. when the liquid crystal
material has a positive dielectric constant anisotropy
.DELTA..epsilon., and may be larger than 0.degree. but smaller than
45.degree. when the liquid crystal material has a negative
dielectric constant anisotropy .DELTA..epsilon..
233. [Polarizer plate]
234. FIG. 18 illustrates the relationships of the direction of the
applied electric field, rubbing direction and transmission axes of
the polarizer plates.
235. The polarizer plates POL that are used are G1220DU
manufactured by Nitto Denko Co. The transmission axis MAX1 of the
lower polarizer plate POL1 is appproximately parallel with the
rubbing direction RDR, and intersect the transmission axis MAX2 of
the upper polarizer plate POL2 at approximate right angles. FIG. 18
illustrates their relationships. There are thus obtained
normally-closed characteristics such that the transmission factor
increases with an increase in the voltage (between the pixel
electrode PX and the counter electrode CT) applied to the
pixels.
236. [Constitution of the peripheries of the matrix]
237. FIG. 10 is a plan view illustrating essential portions of the
peripheries of the matrix (AR) of a display panel PNL that includes
the upper and lower glass substrates SUB1 and SUB2. FIG. 11 is a
sectional view illustrating on the left side the external
connection terminal GTM to be connected to the scanning circuit and
its vicinity, and illustrating on the right side the sealing
portion where there is no external connection terminal and its
vicinity.
238. When the panel that is to be produced is of a small size, a
plurality of devices are fabricated on a sheet of glass, and are
divided in order to improve the throughput. When the panel is of a
large size, a glass plate of standard size for common use of the
production facility is worked and divided into a size that may meet
the type. In either case, the glass is cut after having been
processed through predetermined steps. FIGS. 10 and 11 illustrate
the latter example, and illustrate the upper and lower substrates
SUB1 and SUB2 after they have been cut, wherein LN represents edges
of the two substrates before being cut. In the finished state in
either case, the upper substrate SUB2 is smaller than the lower
substrate SUB1, so that the portions where there exist external
connection terminal groups Tg, Td and terminal CTM (upper side and
left side in the drawings) are exposed. The terminal groups Tg, Td
are named for pluralities of terminals GTM for connection to the
scanning circuit, terminals DTM for connection to the video signal
circuit, and lead-out wirings thereof in units of tape carrier
package TCP (6, 7) on which the integrated circuit chip CHI is
mounted. The lead-out wirings from the matrix unit of each group to
the external connection terminal unit are slanted toward both
sides. The reason is that the terminals DTM, GTM of the display
panel PNL are in agreement with the pitch of arrangement of the
packages TCP and the pitch of connection terminals in the packages
TCP. The counter electrode terminal CTM is for applying a counter
voltage to the counter electrode CT from the external circuit. The
counter electrode signal lines CL of the matrix unit are led out to
the opposite side (right side of the drawing) of the terminal GTM
for the scanning circuit, and the counter voltage signal lines are
collected together through the common bus line CB and are connected
to the counter electrode terminals CTM.
239. Between the transparent glass substrates SUB1 and SUB2 is
formed a sealing pattern SL except a liquid crystal filling port
INJ in order to pour the liquid crystals LC. The sealing material
is, for example, an epoxy resin.
240. The orientation films ORI1 and ORI2 are formed on the inside
of the sealing pattern SL. The polarizer plates POL1 and POL2 are
formed on the outer surfaces of the lower transparent glass
substrate SUB1 and the upper transparent glass substrate SUB2. The
liquid crystals LC are sealed in the regions partitioned by the
sealing pattern SL between the lower orientation film ORI1 and the
upper orientation film ORI2 that determine the orientation of the
liquid crystal molecules. The lower orientation film ORI1 is formed
on the protective film PSV1 on the side of the lower transparent
glass substrate SUB1.
241. In the liquid crystal display device, various layers are
stacked separately on the lower transparent glass substrate SUB1
and on the upper transparent glass substrate SUB2, the sealing
pattern SL is formed on the substrate SUB2, the lower transparent
glass substrate SUB1 and the upper transparent glass substrate SUB2
are superposed one upon the other, the liquid crystals LC are
poured through the opening INJ formed in the sealing member SL, and
the filling port INJ is sealed with an epoxy resin or the like
resin. The upper and lower substrates are then cut to obtain the
liquid crystal display device.
242. [Gate terminal unit]
243. FIGS. 12A and 12B are views illustrating the connection
structure from the scanning signal lines GL of the display matrix
to the external connection terminals GTM thereof, wherein FIG. 12A
is a plan view and FIG. 12B is a sectional view cut along the line
B-B in FIG. 12A. A slant wiring is represented by a straight line
only for convenience of illustration.
244. Symbol AO denotes the boundary line of the direct photoresist
drawing or, in other words, a photoresist pattern of selective
anodic oxidation. Therefore, the photoresist is removed after the
anodic oxidation and the pattern AO that is shown does not remain
in the finished product. As shown in the sectional view, however,
the oxide film AOF is selectively formed on the gate wiring GL, and
its trace remains. In the plan view, the left side with respect to
the boundary line AO of photoresist is covered with a resist so as
not to undergo anodic oxidation, and the right side is not covered
with the resist and undergoes the anodic oxidation. The anodically
oxidized Al layer g1 has an oxide Al.sub.2O.sub.3 film AOF formed
on the surface thereof, and the conductive portion of the lower
side thereof has a decreased volume. The anodic oxidation is
carried out by determining a suitable period of time and a voltage
so that the conductive portion may remain.
245. In the drawing, the aluminum layer g1 is hatched for easy
comprehension but the region that is not anodically oxidized is
patterned like comb teeth. The reason is that whiskers develop on
the surface when the aluminum layer has a large width. Therefore,
each line pattern is formed narrow, and a plurality of line
patterns are bundled in parallel to minimize the probability of
breakage and the decrease of electric conductivity while preventing
the development of whiskers.
246. The gate terminal GTM comprises the aluminum layer g1 and a
transparent conductive layer g2 that protects the surface thereof
and improves the reliability of connection to the TCP (tape carrier
package). The transparent conductive film g2 is a film
(indium-tin-oxide ITO: Nesa film) formed by sputtering and has a
thickness of 1000 to 2000 .ANG. (about 1400 .ANG. in this
embodiment). The conductive layers d1 and d2 formed on the aluminum
layer g1 and on the side surfaces thereof, connect a chromium layer
d1 to both the aluminum layer and the transparent conductive layer
g2 in order to compensate poor connection between the aluminum
layer and the transparent conductive layer g2 and to decrease the
connection resistance. The conductive layer d2 remains since it is
formed using the same mask as the one for forming the conductive
layer d1.
247. In the plan view, the gate insulative film GI is formed on the
right side of the boundary line, the protective film PSV1 is formed
on the right side of the boundary line, and the terminal unit GTM
located at the left end is exposed so that it can be in ohmic
contact with an external circuit. The drawing illustrates only a
pair of gate line GL and gate terminal. In practice, however, pairs
are arranged on the upper and lower sides as shown in FIGS. 12A and
12B, constituting a terminal group Tg (FIG. 10). In the production
process, the left end of the gate terminal extends beyond the
region for cutting the substrates and is short-circuited by the
wiring SHg (not shown). In the production process, this
short-circuiting line SHg serves to feed electric power during the
anodic oxidation and to prevent the electrostatic breakdown at the
time of rubbing the orientation film ORI1.
248. [Drain terminal DTM]
249. FIGS. 13A and 13B are views illustrating the connection of the
video signal line DL to the external connection terminal DTM,
wherein FIG. 13A is a plan view and FIG. 13B is a sectional view
cut along the line B--B in FIG. 13A. These drawings correspond to
the upper portion of FIG. 19. Since the directions of the drawings
are changed for convenience, the direction of left end corresponds
to the upper end of the substrate SUB1.
250. Symbol TSTd denotes a check terminal to which no external
circuit: is connected but which is broadened to be wider than the
wiring so that it can be touched by a probe needle or the like.
Similarly, the drain terminal DTM is broadened to be wider than the
wiring so that it can be connected to an external circuit. The
drain terminals DTM for connection to external circuit are arranged
in the up-and-down direction, constitute a terminal group Td
(subscript is omitted) as shown in FIG. 10, extend beyond the
cutting line of the substrate SUB1, and are all short-circuited by
a wiring SHd (not shown) to prevent the electrostatic breakdown
during the production process. The check terminal TSTd is formed on
every other video signal lines DL as shown in FIGS. 13A and
13B.
251. The drain connection terminal DTM is formed by a single
transparent conductive layer g2 and is connected to the video
signal line DL at a portion where the gate insulative film GI is
removed. The semiconductor layer AS formed on the end of the gate
insulative film GI serves to etch the edge of the gate insulative
film GI in a tapered form. On the terminal DTM, the protective film
PSV has been removed as a matter of course so that connection to
the external circuit can be made.
252. The lead-out wiring from the matrix unit to the drain terminal
DTM has layers d1, d2 of the same level as that of the video signal
line DL, that are constituted in the protective film PSV and are
connected to the transparent conductive film g2 in the protective
film PSV. The reason is that it is necessary to protect the
aluminum layer d2 that easily undergo electrolytic corrosion, as
much as possible using the protective film PSV and the sealing
pattern SL.
253. [Counter electrode terminal CTM]
254. FIGS. 14A and 14B are views illustrating the connection from
the counter electrode signal line CL to the external connection
terminal CTM, wherein FIG. 14A is a plan view and FIG. 14B is a
sectional view cut along the line B-B of FIG. 14A. These drawings
correspond to the left upper portion of FIG. 19.
255. The counter voltage signal lines CL are collected together by
the common bus line CB and are led out to the counter electrode
terminals CTM. The common bus line CB has a structure in which the
conductive layer d1 and the conductive layer d2 are formed on the
conductive layer g1. The reason is that the resistance of the
common bus line CB is decreased so that the counter voltage is
sufficiently fed to the counter voltage signal lines CL from the
external circuit.
256. Accordingly, the counter voltage is sufficiently transmitted
even to the terminal pixels, making it possible to reduce the
occurrence of crosstalk (particularly, crosstalk in the
right-and-left direction on the screen) caused by distortion of the
voltage of the counter electrodes CT in response to the video
signals fed to the video signal lines DL. This structure has a
feature that the resistance of the common bus line is decreased
without additionally providing conductive layers. The conductive
layer g1 of the common bus line CB is not anodized so that it can
be electrically connected to the conductive layer d1 and to the
conductive layer d2. Besides, the conductive layer g1 is exposed
through the gate insulative film GI.
257. The counter electrode terminal CTM has a structure in which
the transparent conductive layer g2 is formed on the conductive
layer g1. The surface is protected by the transparent conductive
layer g2, and the conductive layer g1 is covered with the
transparent conductive layer g2 having a good durability in order
to prevent electrolytic corrosion.
258. In the above-mentioned embodiment, the conductive layer d1 and
the conductive layer d2 are formed on the common bus line CB. The
invention, however, is in no way limited to these conductive layers
only. Even in this case, it is possible to decrease the resistance
of the common bus line CB.
259. [Method of fabrication]
260. A method of fabricating the substrate SUB1 of the
above-mentioned liquid crystal display device will now be described
with reference to FIGS. 15 to 17. In these drawings, characters at
the center represent abbreviations of the names of the steps,
wherein the left side represents the portion of the thin-film
transistor shown in FIG. 8, and the right side illustrates the flow
of process near the gate terminal shown in cross sections of FIGS.
12A and 12B. Except steps B and D, steps A to I are divided
according to the photographic treatment. The sectional view of each
step represents a stage after the photographic treatment is
finished and the photoresist is removed. The photographic treatment
in this embodiment means a series of operations from the
application of the photoresist to the developing thereof through
selective exposure by using a mask. The treatment will now be
described for each of the sectionalized steps.
261. Step A, FIG. 15.
262. A conductive film g1 made of Al--Pd, Al--Si, Al--Ta,
Al--Ti--Ta or the like having a thickness of 3000 .ANG. is formed
by sputtering on the lower transparent glass substrate SUB1 made of
the AN635 glass (trade name). After the photographic treatment, the
conductive film g1 is selectively etched by using a mixed acid
solution of phosphoric acid, nitric acid and glacial acetic acid.
There are thus formed gate electrodes GT, scanning signal lines GL,
counter electrodes CT, counter voltage signal lines CL, electrodes
PL1, gate terminals GTM, a first conductive layer of common bus
line CB, a first conductive layer of counter electrode terminals
CTM, an anodically oxidized bus line SHg (not shown) for connecting
the gate terminals GTM, and anodically oxidized pads (not shown)
connected to the anodically oxidized bus line SHg.
263. Step B, FIG. 15.
264. After the anodically oxidized mask AO is formed by direct
drawing, the substrate SUB1 is dipped in an anodically oxidizing
solution which is obtained by diluting a solution containing 3% of
tartaric acid of which the pH value is adjusted with ammonia to
6.25.+-. 0.05, with an ethylene glycol solution into 1:9, and the
anodizing current density is adjusted to 0.5 mA/cm.sup.2
(constant-current anodization). The anodic oxidation is carried out
until an anodizing voltage of 125 V is reached, which is necessary
for obtaining an Al.sub.2O.sub.3 film having a predetermined
thickness. Desirably, this state is then held for several tens of
minutes (constant-voltage anodization). This is important in view
of forming a uniform Al.sub.2O.sub.3 film. Thus, the conductive
film g1 is anodically oxidized, and anodically oxidized film AOF
having a thickness of 1800 .ANG. is formed on the gate electrodes
GT, scanning signal lines GL, counter electrodes CT, counter
voltage signal lines CL and electrodes PL1. Step C, FIG. 15.
265. The transparent conductive film g2 of the ITO film having a
thickness of 1400 .ANG. is formed by sputtering. After the
photographic treatment, the transparent conductive film g2 is
etched with a mixed acid solution of hydrochloric acid and nitric
acid as an etching solution, in order to form the uppermost layer
of the gate terminal GTM, and second conductive layers of the drain
terminal DTM and the counter electrode terminal CTM.
266. Step D, FIG. 16.
267. Ammonia gas, silane gas and nitrogen gas are introduced into a
plasma CVD apparatus to form a silicon nitride film having a
thickness of 2200 .ANG.. Then, silane gas and hydrogen gas are
introduced into the plasma CVD apparatus to form an i-type
amorphous silicon film having a thickness of 2000 .ANG..
Thereafter, hydrogen gas and phosphine gas are introduced into the
plasma CVD apparatus to form an N(+)-type amorphous silicon film
having a thickness of 300 .ANG..
268. Step E, FIG. 16.
269. After the photographic treatment, the N(+)-type amorphous
silicon film and i-type amorphous silicon film are selectively
etched by using SF.sub.6 and CCl.sub.4 as dry etching gases, in
order to form islands of the i-type semiconductor layer AS.
270. Step F, FIG. 16.
271. After the photographic treatment, the silicon nitride film is
selectively etched by using SF.sub.6 as a dry etching gas.
272. Step G, FIG. 17.
273. The conductive film d1 made of chromium and having a thickness
of 600 .ANG. is formed by sputtering, and the conductive film d2
made of Al--Pd, Al--Si, Al--Ta, Al--Ti--Ta or the like having a
thickness of 4000 .ANG. is formed by sputtering. After the
photographic treatment, the conductive film d2 is etched using the
same solution as the one used in step A and the conductive film d1
is etched using a ceric ammonium nitrate solution, in order to form
video signal lines DL, source electrodes SD1, drain electrodes SD2,
pixel electrodes PX, electrodes PL2, second and third conductive
layers of common bus line CB, and bus line SHd (not shown) for
short-circuiting the drain terminals DTM. Next, CCl.sub.4 and
SF.sub.6 gases are introduced into the dry etching device in order
to etch the N(+)-type amorphous silicon film and, hence, to
selectively remove the N(+)-type semiconductor layer d0 between the
source and the drain.
274. Step H, FIG. 17.
275. Ammonia gas, silane gas and nitrogen gas are introduced into
the plasma CVD apparatus to provide a silicon nitride film having a
thickness of 1 .mu.m. After the photographic treatment, the silicon
nitride film is selectively etched by a photoengraving technology
by using SF.sub.6 as a dry etching gas, in order to form the
protective film PSV.
276. [Equivalent circuit of the whole display device]
277. FIG. 19 is a diagram of connection of an equivalent circuit of
the display matrix unit and of the peripheral circuits thereof.
This circuit diagram is so drawn as to correspond to the practical
geometrical arrangement, wherein AR denotes a matrix array in which
a plurality of pixels are arranged in a two-dimensional
configuration.
278. In the drawing, symbol X represents video signal lines DL, and
subscripts G, B and R are added to green, blue and red pixels,
respectively. Symbol Y denotes scanning signal lines GL, and
subscripts 1, 2, 3, - - -, end are added in the order of scanning
timings.
279. The scanning signal lines Y (subscript is omitted) are
connected to a vertical scanning circuit V, and the video signal
lines X (subscript is omitted) are connected to a video signal
driver unit H.
280. SUP denotes a circuit inclusive of a power-source circuit for
producing a plurality of voltages that are produced by dividing the
voltage of a voltage source and stabilized, and a circuit for
converting the information for CRT (cathode-ray tube) from a host
(higher order arithmetic unit) into information for TFT liquid
crystal display device.
281. [Driving method]
282. FIG. 20 illustrates waveforms for driving the liquid crystal
display device of the present invention. The counter voltage has an
AC rectangular waveform and has two values, i.e., Vch and Vcl. In
synchronism therewith, the non-selection voltage of the scanning
signals Vg(i-1) and Vg(i) is changed into two values, i.e., Vg1h
and Vg11 for every scanning period. The amplitude of the counter
voltage is set to be equal to the amplitude of the non-selection
voltage. The video signal voltage has a value which is the
remainder obtained by subtracting one-half the amplitude of the
counter voltage from a voltage that is to be applied to the liquid
crystal layer.
283. The counter voltage may be a DC voltage. By employing an AC
voltage, however, it is possible to lower the maximum amplitude of
the video signal voltage and, hence, to employ a video signal
driver unit (signal side driver) having a decreased breakdown
voltage.
284. [Operation of storage capacitor Cstg]
285. The storage capacitor Cstg is provided in order to store video
data written into a pixel (after the thin-film transistor TFT is
turned off) for a extended period of time. According to the system
in which the electric field is applied in parallel with the surface
of the substrate employed by the present invention unlike the
system in which the electric field is applied vertically to the
surface of the substrate, there exists almost no capacitance
(so-called liquid crystal capacitance) that is created by the pixel
electrode and the counter electrode. Namely, the liquid crystal
capacitance is incapable of storing video data in the pixel. In the
system in which the electric field is applied in parallel with the
surface of the substrate, therefore, the storage capacitor Cstg is
an essential constituent element.
286. When the thin-film transistor TFT undergoes the switching
operation, furthermore, the storage capacitor Cstg serves to lower
the effect of a change .DELTA.Vg in the gate potential upon the
pixel electrode potential Vs. This is expressed by the following
formula,
.DELTA.Vs={Cgs/(Cgs+Cstg+Cpix)}.times..DELTA.Vg
287. where Cgs is the parasitic capacitance formed between the gate
electrode GT and the source electrode SD1 of the thin-film
transistor, Cpix is the capacitance formed between the pixel
electrode PX and the counter electrode CT, and .DELTA.Vs is the
change in the pixel electrode potential caused by .DELTA.Vg, i.e.,
is the feed-through voltage. This change .DELTA.Vs is a cause of
the DC component applied to the liquid crystal LC, but can be
decreased with an increase in the storage capacity Cstg. A decrease
in the DC component applied to the liquid crystals LC leads to a
long life of the liquid crystals LC and reduces the so-called
printing image in which the preceding picture remains when the
picture on the liquid crystal display screen is changed.
288. As described earlier, since the size of the gate electrode GT
is increased so as to completely cover the i-type semiconductor
layer AS, the area where the gate electrode GT and the source
electrode SD1 overlap one upon the other is accordingly increased
and, hence, the parasitic capacitance Cgs is increased, giving an
adverse effect that the pixel electrode potential Vs is easily
affected by the gate (scanning) signal Vg. However, the provision
of the storage capacitor Cstg eliminates this demerit.
289. [Method of connecting counter voltage signal lines CL to
common bus line CB]
290. FIG. 27 is a block diagram schematically illustrating the
constitution of the liquid crystal display device of a third
embodiment according to the present invention.
291. The liquid crystal display device of this embodiment is
composed of a matrix substrate SUB1 in which the pixels 120 are
arranged in the form of a matrix, a counter substrate SUB2, a
timing controller 100, a drain driver unit 102, a gate driver unit
104, a common voltage generator and driver unit 103, and liquid
crystals (not shown) sealed between the matrix substrate SUB1 and
the counter substrate SUB2.
292. On the matrix substrate SUB1 are arranged the video signal
lines DL for feeding a drive voltage necessary for driving the
pixels 120 and the scanning signal lines GL. The video signal lines
DL and the scanning signal lines GL are perpendicular to each other
and surround the pixels 120, the video signal lines DL being
connected to the drain driver unit 102 and the scanning signal
lines GL being connected to the gate driver unit 104.
293. The counter voltage signal lines CL connected to the counter
electrodes CT in the pixels 120 are arranged in parallel with the
scanning signal lines GL. The counter voltage signal lines CL are
further connected at their both ends to the common voltage
generator and driver unit 103 via the common bus line CB.
294. The gate driver unit 104 and the drain driver unit 102 are
connected to the timing controller 100. The timing controller 100
receives video signals and timing signals from the external host
101, and the drain driver unit 102 generates a drive voltage
corresponding to the video signal and feeds it to the video signal
lines DL in response to a timing signal.
295. The gate driver unit 104 receives timing signals fed from the
timing controller 100, generates a gate drive voltage corresponding
to the video signal, and feeds it to the scanning signal lines GL
in response to a timing signal.
296. As a result, the drain voltage corresponding to the video
signal is successively applied to the pixels 120 in the matrix
substrate SUB1.
297. In this embodiment, the counter voltage signal lines CL are
connected at their both ends to the common bus line CB. Here, the
common bus line CB is formed on the non-display region of the
matrix substrate and is allowed to have an increased width.
Therefore, the resistance of the common bus line CB can be set to
be smaller than the resistance of the counter voltage signal lines
CL.
298. FIG. 28 is a diagram illustrating an equivalent circuit of a
passage for transmitting the drive voltage applied to the counter
electrodes CT in the liquid crystal display device of this
embodiment, and FIG. 29 is a diagram showing waveforms of the drive
voltage at the respective points of FIG. 28.
299. Since the resistance 59 of the common bus line CB is smaller
than the resistance 58 of the counter voltage signal lines CL, the
waveforms of the drive voltage fed from the common voltage driver
unit 60 to the points D, E, F and G in FIG. 28 become a counter
voltage 62 at point D, a counter voltage 63 at point E, a counter
voltage 64 at point F and a counter voltage 65 at point G,
respectively, as shown in FIG. 29.
300. As will be understood from FIG. 29, this embodiment makes it
possible to reduce distortion in the waveform of the drive voltage
fed to the counter electrodes CT from the common voltage driver
unit 60 of the common voltage generator driver unit 103.
301. Therefore, the intensity of the electric field between the
pixel electrode PX and the counter electrode CT becomes nearly
uniform in the pixels 120, making it possible to decrease variation
in the brightness along the counter voltage signal lines CL.
302. Even when the counter voltage signal line CL is broken at a
portion, the drive voltage is supplied to the counter electrode CT
from both ends of the counter voltage signal line CL, preventing
the display quality from being impaired, unlike the prior art, when
the drive voltage is no longer supplied to the counter electrode CT
of the pixels 120 after the broken portion and when the liquid
crystals are no longer driven.
303. FIG. 30A is a plan view illustrating the connection of the
counter voltage signal line CL and the common bus line CB at point
A on the matrix substrate of FIG. 27. FIG. 30B is a sectional view
cut along the line I-I' in FIG. 30A, and FIG. 30C is a sectional
view cut along the line H-H' in FIG. 30A.
304. At point A shown in FIG. 27, the scanning signal line GL and
the counter voltage signal line CL are formed on the matrix
substrate by using aluminum layer g1 and are anodically oxidized so
as to form aluminum oxide AOF on the signal lines. By using a
resist in this case, it is intended not to form aluminum oxide AOF
at the ends of the counter voltage signal lines CL. Next, a gate
oxide film GI is formed. At this moment, a contact hole CHL is
formed in the ends of the counter voltage signal lines CL. Then, by
using a chromium layer d1 and an aluminum layer d2, the video
signal line DL and the common bus line CB are formed
simultaneously. The common bus line CB is formed even on the ends
of the counter voltage signal lines CL, and the common bus line CB
and the counter voltage signal lines CL are electrically connected
together through contact holes CHL at the ends of the counter
voltage signal lines CL. Finally, the protective film PSV is formed
followed by a surface treatment.
305. FIGS. 31A is a plan view illustrating the connection of the
counter voltage signal lines CL and the common bus line CB at point
B on the matrix substrate of FIG. 27, and FIG. 31B is a sectional
view cut along the line J-J' of FIG. 31A.
306. The scanning signal lines GL, counter voltage signal lines CL
and common bus line CB are simultaneously formed on the matrix
substrate by using aluminum g1, and are anodically oxidized to form
aluminum oxide AOF on the signal lines. Furthermore, a gate oxide
film GI is formed thereon. By using a resist in this case, it is
intended not to form aluminum oxide AOF and gate oxide film GI at
the ends of the counter voltage signal lines CL and on the common
bus line CB. Next, the video signal lines DL are formed by using
two layers, i.e., chromium layer d1 and aluminum layer d2. At the
same time, the chromium layer d1 and the aluminum layer d2 are
formed even on the common bus line CB. Thus, the common bus line CB
is constituted by the aluminum layer g1, chromium layer d1 and
aluminum layer d2 and possesses a small resistance. Finally, the
protective film PSV is formed followed by a surface treatment.
307. FIG. 32A is a plan view illustrating the intersection of the
video signal lines DL and the common bus line CB at point C on the
matrix substrate 8 of FIG. 27, and FIG. 32B is a sectional view cut
along the line K-K' in FIG. 32A. The scanning signal lines GL and
the counter voltage signal lines CL are formed on the matrix
substrate by using aluminum layer g1, and are anodically oxidized
to form aluminum oxide AOF on the signal lines.
308. Then, the gate oxide film GI is formed, and the video signal
lines DL are formed by using two layers, i.e., chromium layer d1
and aluminum layer d2. Finally, the protective film PSV is formed
followed by a surface treatment.
309. In FIGS. 30A to 30C, the connection portions (contact holes
CHL) between the counter voltage signal lines CL and the common bus
line CB are formed in the regions between the common bus line CB
and the video signal lines DL. Not limited only thereto, however,
the contact holes CHL may be formed in the regions on the side
opposite to the video signal lines DL with respect to the common
bus line CB as shown in FIGS. 33A to 33C.
310. FIGS. 33A is a plan view of another example of connection of
the counter voltage signal lines CL and the common bus line CB at
point A on the matrix substrate of FIG. 27, FIG. 33B is a sectional
view cut along the line Q-Q' in FIG. 33A, and FIG. 33C is a
sectional view cut along the line R-R' in FIG. 33A.
311. At point A shown in FIG. 27, the scanning signal lines GL and
the counter voltage signal lines CL are formed on the matrix
substrate using the aluminum layer g1, and are anodically oxidized
to form aluminum oxide AOF on the signal lines. By using a resist
in this case, it is intended not to form the aluminum oxide AOF at
the ends of the counter voltage signal lines CL. Next, the gate
oxide film GI is formed. At this moment, contact holes CHL are
formed in the ends of the counter voltage signal lines CL. Next,
the video signal lines DL and the common bus line CB are
simultaneously formed by using two layers, i.e., chromium layer d1
and aluminum layer d2.
312. The common bus line CB is formed even on the ends of the
counter voltage signal lines CL, and the common bus line CB and the
counter voltage signal lines CL are electrically connected together
through the contact holes CHL formed in the ends of the counter
voltage signal lines CL. Finally, the protective film PSV is formed
followed by a surface treatment.
313. In the embodiment shown in FIGS. 33A to 33C, the aluminum
oxide AOF is formed on the portions where the counter voltage
signal lines CL intersect the common bus line CB.
314. In general, furthermore, the aluminum oxide AOF is formed even
on the scanning signal lines GL and, hence, it is necessary to form
a contact hole CHL even in the portions where the scanning signal
lines GL are connected to the gate driver unit 104.
315. By using a resist, furthermore, it is intended not to form the
aluminum oxide AOF on the portions where the contact holes CHL are
to be formed.
316. In the embodiment shown in FIGS. 30A to 30C, in this case, it
is necessary to precisely form the resist for forming contact holes
CHL through which the counter voltage signal lines CL and the
common bus line CB are connected together.
317. In the embodiment of FIG. 33, however, a resist is formed on
the periphery on the matrix substrate on the side opposite to the
video signal lines DL with respect to the common bus line CB, in
order to form contact holes CHL for connecting the counter voltage
signal lines CL to the common bus line CB and contact holes CHL for
connecting the scanning signal lines GL to the gate driver unit
104. Besides, when the resist is directly drawn, the precision can
be made loose.
318. As described above, the common bus line CB is formed along the
edge of the panel using the same materials and through the same
production steps as those of the scanning signal lines GL and the
video signal lines DL. The common bus line CB is further connected
to both ends of the counter voltage signal lines CL.
319. FIGS. 34 and 35 are diagrams illustrating further arrangements
of the common bus line CB of the embodiment.
320. The common bus line CB need not be extended along all of the
edges of the panel that is shown in FIG. 27. As shown in FIG. 34,
the common bus line CB may be extended avoiding the region where
the video signal lines DL are connected to the drain driver unit
102.
321. This makes it possible to decrease parasitic capacitance
produced at portions where the video signal lines DL intersect the
common bus line CB.
322. As shown in FIG. 35, furthermore, the common bus line CB may
be divided into a plurality of common bus lines CBA, CBB which are
extended from the panel and are connected together in the driver
unit provided in the periphery. This makes it possible to decrease
the length of the common bus line CB inside the panel.
323. [Thickness adjustment film AD]
324. A liquid crystal display device of a fourth embodiment which
uses a thickness adjustment film AD as a constituent element will
be described below.
325. FIG. 36A is a plan view of a portion where the counter voltage
signal line CL at a point corresponding to point A on the matrix
substrate of FIG. 27 is connected to the common bus line CB in the
liquid crystal display device of embodiment 3. FIG. 36B is a
sectional view cut along the line M-M' in FIG. 36A, and FIG. 36C is
a sectional view cut along the line N-N' in FIG. 36A.
326. At a point corresponding to point A of FIG. 27, as shown in
FIG. 36A, the scanning signal lines GL and the counter voltage
signal lines CL are formed on the matrix substrate using the
aluminum layer g1 and, at the same time, a thickness adjustment
film AD is formed. The thickness adjustment film AD is formed in
the form of islands at least among the scanning signal lines GL,
but are not electrically connected to the scanning signal lines GL.
Then, by using the same material as that of the video signal lines
DL, the common bus line CB is formed to pass at least over the
thickness adjustment film AD.
327. FIGS. 37A is a plan view illustrating the connection of the
counter voltage signal lines CL and the common bus line CB at a
point corresponding to point B on the matrix substrate of FIG. 27
in the liquid crystal display device of embodiment 4. FIG. 37B is a
sectional view cut along the line O-O' in FIG. 37A. At a point
corresponding to point B of FIG. 27, as shown in FIG. 37A, the
scanning signal lines GL, counter voltage signal lines CL and
common bus line CB are simultaneously formed on the matrix
substrate by using the aluminum layer g1 and, then, the video
signal lines DL and thickness adjustment film AD are formed via the
gate oxide film AOF. The thickness adjustment film AD is formed on
the common bus line CB.
328. FIGS. 38A is a plan view illustrating the intersection of the
video signal line DL and the common bus line CB at a point
corresponding to point C of the matrix substrate of FIG. 27 in the
liquid crystal display device of embodiment 4. FIG. 38B is a
sectional view cut along the line P-P' in FIG. 38A. At a point
corresponding to point C of FIG. 27, as shown in FIG. 38A, the
scanning signal lines GL and counter voltage signal lines CL are
formed on the matrix substrate by using the aluminum layer g1, and
the video signal lines DL and thickness adjustment film AD are
formed on the gate oxide film GI.
329. The thickness adjustment film AD is formed in the form of
islands at least among the video signal lines DL but are not
electrically connected to the video signal lines DL. The thickness
adjustment film AD is also formed on the common bus line CB. With
the thickness adjustment film AD inserted, the portion where the
common bus line CB is formed possesses the same sectional structure
and the same thickness. This makes it possible to uniformalize the
thickness of the common bus line CB formed along the edge of the
substrate, to decrease variation in the thickness of the edges of
the substrate, to maintain constant the gap length between the two
substrates and, hence, to decrease variation in the gap length of
the liquid crystal display device.
330. FIG. 39 is a diagram illustrating another arrangement of the
common bus of embodiment 4.
331. In forming the common bus line CB along the edges of the
panel, dummy signal lines DMY may be formed using the same material
and maintaining the same thickness as those of the common bus line
CB in the regions where no common bus line CB is arranged, as shown
in FIG. 39, in order to decrease variation in the thickness along
the edges of the panel.
332. [Display panel PNL and drive circuit substrate PCB1]
333. FIG. 21 is a top view illustrating a state where a video
signal (drain) driver unit H and a vertical scanning (gate driver)
unit V are connected to the display panel PNL shown in FIG. 10.
334. Symbol CHI denotes driver IC chips (the lower five are driver
IC chips on the side of the vertical scanning circuit, and the left
ten are driver IC chips on the side of the video signal driver
circuit) for driving the display panel PNL. Symbol TCP denotes tape
carrier packages in which driver IC chips are mounted by a
tape-automated-bonding method (TAB), and PCB1 denotes a driver
circuit substrate on which TCPs and capacitors are mounted, which
is divided into two for the video signal driver unit and the
scanning signal driver unit. Symbol FGP denotes a frame ground pad
to which are soldered spring-like pieces formed by cutting a
shielding case SHD, and FC denotes a flat cable for electrically
connecting the lower driver circuit substrate PCB1 and the left
driver circuit substrate PCB1 together. The flat cable FC has, as
shown, a plurality of lead wires (phosphor-bronze wires plated with
tin) that are supported and sandwiched by a polyethylene layer and
a polyvinyl alcohol layer of a striped shape.
335. [Structure for connecting TCP]
336. FIG. 22 is a diagram illustrating, in cross section, the
structure of a tape carrier package TCP in which an integrated
circuit chip CHI is mounted on a flexible wiring substrate to
constitute the scanning signal driver unit V and the video signal
driver unit H, and FIG. 23 is a sectional view illustrating
essential portions in a state where the tape carrier package TCP is
connected to a terminal GTM for a signal circuit in the liquid
crystal display panel PNL.
337. In the drawing, symbol TTB denotes an input terminal/wiring
unit of the integrated circuit CHI, and TTM denotes an output
terminal/wiring unit of the integrated circuit CHI, which are made
of, for example, copper. To their ends (usually called inner leads)
on the inside are connected bonding pads PAD of the integrated
circuit CHI by a so-called facedown bonding method. The ends
(usually called outer leads) on the outer sides of the terminals
TTB and TTM correspond to the inputs and outputs of the
semiconductor integrated circuit chip CHI, and are connected by
soldering to a CRT/TFT converter circuit/power source circuit SUP,
and are further connected by anisotropic conductive film ACF to the
liquid crystal display panel PNL. The package TCP is connected to
the panel in a manner that the ends thereof covers the protective
film PSV through which are exposed the connection terminals GTM on
the side of the panel PNL. Therefore, the external connection
terminals GTM(DTM) are covered by either the protective film PVS1
or the package TCP, and are strong against electrolytic
corrosion.
338. Symbol BF1 denotes a base film made of polyimide or the like,
and SRS denotes a solder resist film for masking so that the solder
may not be applied to undesired portions during the soldering. The
gap between the upper and lower glass substrates on the outer side
of the sealing pattern SL is protected, after washing, by an epoxy
resin EPX and the like. The gap between the package TCP and the
upper substrate SUB2 is filled with a silicone resin SIL to provide
multiple protection.
339. [Driver unit substrate PCB2]
340. On the driver unit substrate PCB2 are mounted electronic parts
such as ICs, capacitors and resistors. On the driver unit substrate
PCB2 are mounted a circuit SUP inclusive of a power source circuit
for producing a plurality of stable voltages by dividing a voltage
from a voltage source and a circuit that converts the data for CRT
(cathode-ray tube) from the host (higher arithmetic unit) into the
data for the TFT liquid crystal display device. Symbol CJ denotes a
connector connection unit, to which is connected a connector that
is connected to an external unit but that is not shown.
341. The driver unit substrate PCB1 is connected to the driver unit
board PCB2 through the flat cable FC.
342. [Whole constitution of the liquid crystal display module]
343. FIG. 24 is an exploded perspective view illustrating the
constituent parts of the liquid crystal display module MDL.
344. Symbol SHD denotes a frame-like shielding case (metal frame)
made of a metal plate, LCW denotes a display window thereof, PNL
denotes the liquid crystal display panel, SPB denotes a light
diffusion plate, LCB denotes a light conductor, RM denotes a
reflector plate, BL denotes a backlight fluorescent tube, and LCA
denotes a backlight case, which are stacked vertically as shown to
assemble a module MDL.
345. The whole module MDL is secured by pawls and hooks provided in
the shielding case SHD.
346. The backlight case LCA contains the backlight fluorescent tube
BL, light diffusion plate SPB, light conductor LCB and reflector
plate RM. Light emitted from the backlight fluorescent tube BL
disposed on one side of the light conductor LCB is rendered
backlight which is uniform on the display surface through the light
conductor LCB, reflector plate RM and light diffusion plate SPB,
and is emitted to the side of the liquid crystal display panel
PNL.
347. To the backlight fluorescent tube BL is connected an inverter
circuit substrate PCB3 which is a power source for the backlight
fluorescent tube BL.
348. As will be obvious from the foregoing description, the
following representative effects are obtained from the liquid
crystal display device of the present invention.
349. (1) Rise in the drive voltage is suppressed, and so-called
crosstalk (smear) decreases. There is therefore provided a liquid
crystal display device which offers a wide angle of view like that
of cathode-ray tubes, operates on a low voltage, consumes a
decreased amount of electric power, and maintains a good picture
quality.
350. (2) The width of wiring is broadened without decreasing the
opening areas of the pixels that contribute to the display, the
resistance of the wiring is decreased to improve the picture
quality, and the driver unit consumes a decreased amount of
electric power.
351. Besides, the number of places or the areas where the wirings
intersect is decreased, the probability of short-circuiting among
the wirings is decreased, and the parasitic capacitances are
decreased among the wirings, making it possible to improve the
quality of picture and to decrease the consumption of electric
power by the driver unit.
352. By utilizing the effect of using the drain electrode. SD2 in
common, furthermore, it is possible to increase the number of
thin-film transistors in a pixel without increasing the areas where
the-wirings intersect. By providing a plurality of thin-film
transistors for a plurality of pixel electrodes PX, furthermore, it
is possible to obtain normal display even when a pixel electrode PX
is disconnected at a portion. Even when one of the thin-film
transistors is defective, normal display is obtained by cutting out
the defective thin-film transistor.
353. (3) Both ends of the counter voltage signal lines CL are
connected to the common bus line CB, and the resistance of the
common bus line CB is set to be smaller than the resistance of the
counter voltage signal lines CL. It is therefore made possible to
decrease distortion in the waveform of the voltage for driving the
counter electrodes CT fed from the common voltage driver unit 52,
to nearly uniformalize the electric field intensity between the
pixel electrode and the counter electrode CT in the pixels in the
panel, and to decrease variation in the brightness that occurs
along the counter voltage signal lines CL. With both ends of the
counter voltage signal lines CL connected to the common bus line
CB, furthermore, the common voltage can be supplied to both ends of
the counter voltage signal lines CL and liquid crystals in the
pixels can be driven even in case any counter voltage signal line
CL is broken disconnected at a portion. Unlike the prior art,
therefore, it does not happen that liquid crystals in the pixels
after the disconnected portion are not driven, and the quality of
display is not impaired.
354. (4) The region where the common bus line CB is arranged has a
cross-sectional structure which is the same as the cross-sectional
structure of the portions where the common bus line CB intersects
the scanning signal lines GL or the video signal lines DL. It is
therefore made possible to decrease variation in the thickness of
the edges of the substrate where the common bus line CB is formed
and, hence, to make constant the gap length between the two pieces
of substrates to decrease variation in the gap of the liquid
crystal display device.
355. Though the present invention has been concretely described
above by way of embodiments, it should be noted that the invention
is in no way limited to the above embodiments only but can be
modified in a variety of ways without departing from the spirit and
scope of the invention. In the above-mentioned embodiments, for
instance, amorphous silicon thin-film transistors TFT are used as
active elements. It is, however, also allowable to use polysilicon
thin-film transistors, MOS transistors on a silicon wafer, or
two-terminal elements such as MIM (metal-intrinsic-metal) diodes.
The invention can be further adapted even to a liquid crystal
display device of the reflection type constituted by a pair of
substrates at least one of which is transparent, a reflection means
and a polarizing means.
* * * * *