loadpatents
name:-0.020133018493652
name:-0.034818887710571
name:-0.00048208236694336
Zambrano; Raffaele Patent Filings

Zambrano; Raffaele

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zambrano; Raffaele.The latest application filed is for "process for selectively sealing ferroelectric capactive elements incorporated in semiconductor integrated non-volatile memory cells".

Company Profile
0.27.15
  • Zambrano; Raffaele - Viagrande IT
  • Zambrano; Raffaele - S. Giovanni La Punta IT
  • Zambrano, Raffaele - Catania IT
  • Zambrano; Raffaele - Via Petrone IT
  • Zambrano; Raffaele - Via Grande IT
  • Zambrano; Raffaele - San Giovanni La Punta IT
  • Zambrano; Raffaele - San Giovanni la Punta CT IT
  • Zambrano; Raffaele - Mercato S. Severino IT
  • Zambrano; Raffaele - Mercato San Severino IT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Contact structure for an integrated semiconductor device
Grant 7,052,985 - Zambrano , et al. May 30, 2
2006-05-30
Capacitor for semiconductor integrated devices
Grant 7,049,646 - Zambrano , et al. May 23, 2
2006-05-23
Device integrating a nonvolatile memory array and a volatile memory array
Grant 7,050,322 - Zambrano May 23, 2
2006-05-23
Method of forming a contact structure and a ferroelectric memory device
Grant 6,878,982 - Zambrano April 12, 2
2005-04-12
Method of fabricating a ferroelectric stacked memory cell
Grant 6,872,996 - Demange , et al. March 29, 2
2005-03-29
In-situ deposition and doping process for polycrystalline silicon layers and the resulting device
Grant 6,867,113 - Zambrano March 15, 2
2005-03-15
Process for selectively sealing ferroelectric capactive elements incorporated in semiconductor integrated non-volatile memory cells
App 20050009209 - Zambrano, Raffaele
2005-01-13
Contact structure for an integrated semiconductor device
App 20040175927 - Zambrano, Raffaele ;   et al.
2004-09-09
Contact structure for semiconductor devices and corresponding manufacturing process
Grant 6,737,284 - Zambrano May 18, 2
2004-05-18
Contact structure for an integrated semiconductor device
Grant 6,734,565 - Zambrano , et al. May 11, 2
2004-05-11
Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
Grant RE38,510 - Zambrano , et al. May 4, 2
2004-05-04
Method of fabricating a ferroelectric stacked memory cell
App 20040058493 - Demange, Nicolas ;   et al.
2004-03-25
Ferroelectric memory cell and corresponding manufacturing method
App 20040029298 - Casagrande, Giulio ;   et al.
2004-02-12
Method of forming a contact structure and a ferroelectric memory device
App 20040005725 - Zambrano, Raffaele
2004-01-08
Method of fabricating a ferroelectric stacked memory cell
Grant 6,656,801 - Corvasce , et al. December 2, 2
2003-12-02
Contact structure for a ferroelectric memory device
Grant 6,633,060 - Zambrano October 14, 2
2003-10-14
Ferroelectric memory cell and corresponding manufacturing method
Grant 6,627,931 - Casagrande , et al. September 30, 2
2003-09-30
Device integrating a nonvolatile memory array and a volatile memory array
App 20030174531 - Zambrano, Raffaele
2003-09-18
Capacitor for semiconductor integrated devices
App 20030146460 - Zambrano, Raffaele ;   et al.
2003-08-07
Contact structure for semiconductor devices and corresponding manufacturing process
App 20030082873 - Zambrano, Raffaele
2003-05-01
Contact structure for an integrated semiconductor device
App 20020180054 - Zambrano, Raffaele ;   et al.
2002-12-05
Contact structure for a ferroelectric memory device
App 20020070397 - Zambrano, Raffaele
2002-06-13
Contact structure for semiconductor devices and corresponding manufacturing process
App 20020050627 - Zambrano, Raffaele
2002-05-02
ROM memory cell not decodable by visual inspection
App 20020034106 - Zambrano, Raffaele
2002-03-21
Structure of a stacked memory cell, in particular a ferroelectric cell
App 20020008269 - Corvasce, Chiara ;   et al.
2002-01-24
Integrated circuit structure comprising capacitor element and corresponding manufacturing process
App 20010046735 - Zambrano, Raffaele
2001-11-29
Structure of a stacked memory cell, in particular a ferroelectric cell
Grant 6,300,654 - Corvasce , et al. October 9, 2
2001-10-09
Integrated circuit structure comprising capacitor element and corresponding manufacturing process
Grant 6,294,798 - Zambrano September 25, 2
2001-09-25
Asymmetric MOS technology power device
App 20010001213 - Magri', Angelo ;   et al.
2001-05-17
Integrated circuit with improved electrostatic discharge protection circuitry
Grant 6,218,706 - Waggoner , et al. April 17, 2
2001-04-17
Integrated circuit with improved electrostatic discharge protection including multi-level inductor
Grant 6,034,400 - Waggoner , et al. March 7, 2
2000-03-07
Method for making high-frequency bipolar transistor
Grant 5,940,711 - Zambrano August 17, 1
1999-08-17
Metallization and wire bonding process for manufacturing power semiconductor devices
Grant 5,869,357 - Zambrano February 9, 1
1999-02-09
DMOS device structure, and related manufacturing process
Grant 5,838,042 - Zambrano November 17, 1
1998-11-17
Process for manufacturing a high-frequency bipolar transistor structure
Grant 5,804,486 - Zambrano , et al. September 8, 1
1998-09-08
Bonding pad for a semiconductor chip
Grant 5,773,899 - Zambrano June 30, 1
1998-06-30
Method of fabricating an integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors
Grant 5,679,587 - Zambrano October 21, 1
1997-10-21
Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
Grant 5,654,225 - Zambrano August 5, 1
1997-08-05
Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors
Grant 5,565,701 - Zambrano October 15, 1
1996-10-15
Integrated structure protection device for protecting logic-level power MOS devices against electro-static discharges
Grant 5,426,320 - Zambrano June 20, 1
1995-06-20
Manufacturing process for a monolithic integrated semiconductor device having multiple epitaxial layers with a low concentration of impurities
Grant 4,889,822 - Musumeci , et al. December 26, 1
1989-12-26
Process for the formation of a monolithic high voltage semiconductor device
Grant 4,780,430 - Musumeci , et al. October 25, 1
1988-10-25

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed