Zaitsu; Masaru

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zaitsu; Masaru.The latest application filed is for "method of topology-selective film formation of silicon oxide".

Company Profile

7.12.8

Zaitsu; Masaru - Kawasaki JP
Zaitsu; Masaru - Kawasaki-shi JP
Zaitsu; Masaru - Kanagawa JP
Zaitsu; Masaru - Tokyo JP
Zaitsu; Masaru - Kitakyushu JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of topology-selective film formation of silicon oxide Grant 11,127,589 - Zaitsu , et al. September 21, 2	2021-09-21
Method Of Topology-selective Film Formation Of Silicon Oxide App 20210118667 - Fukazawa; Atsuki ; et al.	2021-04-22
Method of forming conformal silicon carbide film by cyclic CVD Grant 10,847,365 - Fukazawa , et al. November 24, 2	2020-11-24
Method Of Topology-selective Film Formation Of Silicon Oxide App 20200251328 - Kind Code	2020-08-06
Method Of Forming Conformal Silicon Carbide Film By Cyclic Cvd App 20200118815 - Fukazawa; Atsuki ; et al.	2020-04-16
Method For Depositing Oxide Film By Peald Using Nitrogen App 20200111669 - Zaitsu; Masaru ; et al.	2020-04-09
Method of atomic layer etching using hydrogen plasma Grant 10,504,742 - Zaitsu , et al. Dec	2019-12-10
Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap Grant 10,435,790 - Fukazawa , et al. O	2019-10-08
Method of reforming insulating film deposited on substrate with recess pattern Grant 10,283,353 - Kobayashi , et al.	2019-05-07
Method Of Atomic Layer Etching Using Hydrogen Plasma App 20180350620 - Zaitsu; Masaru ; et al.	2018-12-06
Method Of Reforming Insulating Film Deposited On Substrate With Recess Pattern App 20180286663 - Kobayashi; Akiko ; et al.	2018-10-04
Method Of Subatmospheric Plasma-enhanced Ald Using Capacitively Coupled Electrodes With Narrow Gap App 20180119283 - Fukazawa; Atsuki ; et al.	2018-05-03
Substrate processing apparatus and method of processing substrate Grant 9,818,601 - Tokunaga , et al. November 14, 2	2017-11-14
Method of cyclic dry etching using etchant film Grant 9,793,135 - Zaitsu , et al. October 17, 2	2017-10-17
Method of atomic layer etching using functional group-containing fluorocarbon Grant 9,735,024 - Zaitsu August 15, 2	2017-08-15
Method Of Atomic Layer Etching Using Functional Group-containing Fluorocarbon App 20170186621 - Zaitsu; Masaru	2017-06-29
Continuous process incorporating atomic layer etching Grant 9,627,221 - Zaitsu , et al. April 18, 2	2017-04-18
Method for forming dielectric film in trenches by PEALD using H-containing gas Grant 9,455,138 - Fukazawa , et al. September 27, 2	2016-09-27
Shower apparatus Grant 5,428,850 - Hiraishi , et al. July 4, 1	1995-07-04
Shower apparatus Grant 5,414,879 - Hiraishi , et al. May 16, 1	1995-05-16

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