Yang; Yuan-Cheng
Patent Applications and Registrations
Patent applications and USPTO patent grants for Yang; Yuan-Cheng.The latest application filed is for "gate electrode extending into a shallow trench isolation structure in high voltage devices".
- Yang; Yuan-Cheng - Hsinchu TW
- Yang; Yuan-Cheng - Kaohsiung City TW
- Yang; Yuan-Cheng - Kaohsiung TW
| Patent | Date |
|---|---|
| Gate Electrode Extending Into A Shallow Trench Isolation Structure In High Voltage Devices App 20220285551 - Yang; Yuan-Cheng ; et al. | 2022-09-08 |
| Gate Oxide Forming Process App 20210134679 - Yang; Yuan-Cheng ; et al. | 2021-05-06 |
| Gate oxide forming process Grant 10,985,071 - Yang , et al. April 20, 2 | 2021-04-20 |
| Fabricating method of shallow trench isolation structure Grant 8,815,703 - Huang , et al. August 26, 2 | 2014-08-26 |
| Fabricating Method Of Shallow Trench Isolation Structure App 20140073109 - Huang; Liang-An ; et al. | 2014-03-13 |
| Shallow Trench Isolation Structure And Fabricating Method Thereof App 20130043513 - HUANG; Liang-An ; et al. | 2013-02-21 |
| Method of etching oxide layer and nitride layer Grant 8,034,690 - Shih , et al. October 11, 2 | 2011-10-11 |
| Method of Etching Oxide Layer and Nitride Layer App 20110189859 - Shih; Ping-Chia ; et al. | 2011-08-04 |
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