Yang; Hung-Mo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yang; Hung-Mo.The latest application filed is for "fin fet and method of fabricating same".

Company Profile

0.11.11

Yang; Hung-Mo - Suwon-si KR
Yang; Hung-Mo - Gyeonggi-do N/A KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Fin FET and method of fabricating same Grant 9,893,190 - Kim , et al. February 13, 2	2018-02-13
Fin Fet And Method Of Fabricating Same App 20170229581 - Kim; Keun-Nam ; et al.	2017-08-10
Fin FET and method of fabricating same Grant 9,640,665 - Kim , et al. May 2, 2	2017-05-02
Fin Fet And Method Of Fabricating Same App 20160056296 - Kim; Keun-Nam ; et al.	2016-02-25
Fin FET and method of fabricating same Grant 9,196,733 - Kim , et al. November 24, 2	2015-11-24
Fin Fet And Method Of Fabricating Same App 20150228796 - Kim; Keun-Nam ; et al.	2015-08-13
fin FET and method of fabricating same Grant 9,018,697 - Kim , et al. April 28, 2	2015-04-28
Fin FET and method of fabricating same Grant 8,264,034 - Kim , et al. September 11, 2	2012-09-11
Fin Fet And Method Of Fabricating Same App 20120181604 - Kim; Keun-Nam ; et al.	2012-07-19
Fin FET and method of fabricating same Grant 8,053,833 - Kim , et al. November 8, 2	2011-11-08
Fin Fet And Method Of Fabricating Same App 20110260227 - Kim; Keun-Nam ; et al.	2011-10-27
Fin FET and method of fabricating same Grant 7,868,380 - Kim , et al. January 11, 2	2011-01-11
Fin Fet And Method Of Fabricating Same App 20100065907 - Kim; Keun-Nam ; et al.	2010-03-18
Wafer Having Scribe Lanes Suitable For Sawing Process, Reticle Used In Manufacturing The Same, And Method Of Manufacturing The Same App 20090081566 - Yang; Hung-Mo	2009-03-26
Method of fabricating a three-dimensional MOSFET employing a hard mask spacer Grant 7,494,895 - Yang , et al. February 24, 2	2009-02-24
Wafer having scribe lanes suitable for sawing process, reticle used in manufacturing the same, and method of manufacturing the same Grant 7,436,047 - Yang October 14, 2	2008-10-14
Fin Fet And Method Of Fabricating Same App 20070176245 - KIM; Keun-Nam ; et al.	2007-08-02
Fin FET and method of fabricating same Grant 7,217,623 - Kim , et al. May 15, 2	2007-05-15
Wafer Having Scribe Lanes Suitable For Sawing Process, Reticle Used In Manufacturing The Same, And Method Of Manufacturing The Same App 20070057349 - YANG; Hung-Mo	2007-03-15
Method of fabricating a three-dimensional MOSFET employing a hard mask spacer App 20050215016 - Yang, Hung-Mo ; et al.	2005-09-29
Fin FET and method of fabricating same App 20050173759 - Kim, Keun-Nam ; et al.	2005-08-11

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