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name:-0.005817174911499
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Wuthrich; Ryan Wayne Patent Filings

Wuthrich; Ryan Wayne

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wuthrich; Ryan Wayne.The latest application filed is for "incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for si-ge bipolar technology".

Company Profile
0.5.6
  • Wuthrich; Ryan Wayne - Burlington VT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
Grant 7,713,829 - Chu , et al. May 11, 2
2010-05-11
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY
App 20080124881 - Chu; Jack Ooh ;   et al.
2008-05-29
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
Grant 7,173,274 - Chu , et al. February 6, 2
2007-02-06
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
App 20050145172 - Chu, Jack O. ;   et al.
2005-07-07
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
Grant 6,875,279 - Chu , et al. April 5, 2
2005-04-05
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
App 20050054171 - Chu, Jack Oon ;   et al.
2005-03-10
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
Grant 6,815,802 - Chu , et al. November 9, 2
2004-11-09
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
App 20030094130 - Chu, Jack O. ;   et al.
2003-05-22
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
App 20020121676 - Chu, Jack Oon ;   et al.
2002-09-05
Incorporation Of Carbon In Silicon/silicon Germanium Epitaxial Layer To Enhance Yield For Si-ge Bipolar Technology
App 20020100917 - Chu, Jack Oon ;   et al.
2002-08-01
Process for treating a semiconductor substrate
Grant 6,354,309 - Arndt , et al. March 12, 2
2002-03-12

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